Composite device

Abstract

To provide an electronic apparatus with reduced power consumption, and also to provide a multifunctional electronic apparatus to be easily reduced in weight and size.SOLUTION: A composite device includes a sensor device and a display device. The sensor device includes a first communication section and a sensor section and can be mounted on a human body. The display device includes a display section, a second communication section, and a control section. The first communication section has a function of transmitting a signal including information acquired by the sensor section. The second communication section has a function of receiving the signal. The control section has a function of recovering from a resting state in response to the signal. The control section has a function of generating first image data based on the information so as to output the data to the display section. The display section has a function of displaying an image based on the first image data.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] 1. Field of the Invention One aspect of the present invention relates to a display device. One aspect of the present invention relates to a sensor device. One aspect relates to an imaging device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, and the like. , electronic device, lighting device, input device, input / output device, driving method thereof, or manufacturing method thereof Semiconductor devices function by utilizing the semiconductor properties. This refers to all devices that can do this. [Background technology]

[0003] In recent years, virtual reality (VR) and augmented reality (AR) have become increasingly popular. Devices for Augmented Reality (AR) are being actively developed.

[0004] Representative display devices applicable to display panels include liquid crystal display devices, Organic EL (Electro Luminescence) elements and light-emitting diodes (LEDs) a light-emitting device equipped with a light-emitting element such as a light-emitting diode (LED), an electrophoresis Examples include electronic paper that displays information using a dynamic method.

[0005] For example, the basic structure of an organic EL element is a layer containing a light-emitting organic compound between a pair of electrodes. By applying a voltage to this element, light is emitted from the light-emitting organic compound. A display device using such an organic EL element is called a liquid crystal display device. Since it does not require a backlight, which was previously required in some devices, it is thin, lightweight, has high contrast, and consumes less power. For example, an example of a display device using an organic EL element is This is described in reference 1. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2002-324673 Summary of the Invention [Problem to be solved by the invention]

[0007] Since VR and AR devices are worn on the human body, they are preferably small and lightweight. However, if you want to use it for a long time in an environment without a power supply, you need a large capacity battery. It was difficult to make the device smaller and lighter because it needed to be equipped with a battery. The increased power consumption caused by this will require larger capacity batteries.

[0008] In recent years, with the rise in health awareness, there has been an increasing demand for people to understand and manage their health status in their daily lives. For example, medical devices such as blood pressure monitors and electrocardiograms are becoming smaller and more suitable for personal use. Prices are falling. Information terminals such as smartphones and tablet terminals are also becoming more expensive. The number of functions has increased, including the addition of a function to manage the collected data. For those with low incomes, such daily measurements are often a hassle. Therefore, there is a tendency for people to be polarized into those who manage their health and those who do not.

[0009] An object of one embodiment of the present invention is to provide an electronic device with reduced power consumption. Another object is to provide an electronic device that is easily made lighter and smaller and has multiple functions. Another object of the present invention is to provide an electronic device that makes it easy to manage health conditions. One of the objectives is to provide an electronic device that can display images with enhanced realism. The task is to provide a novel display device, sensor device, electronic device, composite device, etc. This is one of the topics.

[0010] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter can be extracted from the description, drawings, claims, etc. [Means for solving the problem]

[0011] One aspect of the present invention is a composite device including a sensor device and a display device. The device has a first communication unit and a sensor unit, and is wearable on a human body. The sensor includes a display unit, a second communication unit, and a control unit. The second communication unit has a function of transmitting a signal including the information. The second communication unit has a function of receiving the signal. The control unit has a function of returning from a sleep state in response to the signal. a display having a function of generating first image data based on the information and outputting the first image data to a display unit; The unit has a function of displaying an image based on the first image data.

[0012] In the above, the sensor device is configured to be able to be attached to the eyeball. Alternatively, the sensor device may be attached to the skin (wearable). Alternatively, the sensor device may be configured to be worn on the wrist, finger, or arm. Alternatively, the sensor device may be fixed to clothing. It is preferable that

[0013] In the above, the sensor unit measures blood glucose level, heart rate, blood pressure, body temperature, oxygen saturation, and It is preferable that the blood glucose concentration detecting device has a function of detecting one or more of the concentrations of fatty acids.

[0014] In addition, in the above, the display unit has a pixel density of 1000 ppi or more and 10000 ppi or less. The number of pixels in the scanning line direction or the signal line direction is 2000 or more and 10000 or less. It is preferable that:

[0015] In the above, it is preferable that the display device has an imaging unit. based on the information included in the signal and the second image data input from the imaging unit. It is preferable that the image processing device has a function to generate image data and output it to a display unit. [Effects of the Invention]

[0016] According to one embodiment of the present invention, an electronic device with reduced power consumption can be provided. It is possible to provide a multi-functional electronic device that can be easily made smaller and more flexible. Alternatively, electronic devices that can display images with enhanced reality can be provided. Alternatively, a new electronic device or a composite device can be provided.

[0017] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. can be extracted from descriptions in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0018] [Figure 1] 1A and 1B are diagrams showing an example of the configuration of a composite device. [Figure 2] FIG. 2 is a diagram illustrating an example of the operation of the display device. [Figure 3] 3A to 3E are diagrams illustrating an example of the configuration of a sensor device. [Figure 4] 4A to 4C are diagrams illustrating examples of images. [Figure 5] 5A and 5B are diagrams showing an example of the configuration of a composite device. [Figure 6] 6A and 6B are diagrams showing configuration examples of electronic devices. [Figure 7] 7A and 7B are diagrams showing configuration examples of electronic devices. [Figure 8] 8A and 8B are diagrams showing examples of the configuration of a display panel. [Figure 9] 9A and 9B are diagrams showing configuration examples of a display module. [Figure 10] FIG. 10 is a diagram illustrating a configuration example of a semiconductor device. [Figure 11] FIG. 11 is a diagram illustrating a configuration example of a semiconductor device. [Figure 12] FIG. 12 is a diagram illustrating a configuration example of a semiconductor device. [Figure 13] FIG. 13 is a diagram illustrating a configuration example of a semiconductor device. [Figure 14] 14A to 14C are diagrams showing configuration examples of a semiconductor device. DETAILED DESCRIPTION OF THE INVENTION

[0019] Hereinafter, embodiments will be described with reference to the drawings. It is understood that the present invention may be embodied in various different forms without departing from its spirit and scope. It will be readily apparent to those skilled in the art that various modifications may be made to the embodiments and details of the present invention. However, the present invention should not be construed as being limited to the description of the following embodiments.

[0020] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0021] In each drawing described in this specification, the size of each component, the thickness of a layer, or the area The figures may be exaggerated for clarity and are not necessarily limited to that scale. I can't.

[0022] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not a numerical limitation.

[0023] (Embodiment 1) In this embodiment, a display device, a sensor device, and a composite device including the display device and the sensor device according to one embodiment of the present invention will be described. The device will be described with reference to the drawings.

[0024] [Example of a composite device configuration] FIG. 1A shows a schematic diagram of a composite device 10. The composite device 10 includes a display device 11 and and a sensor device 12.

[0025] The display device 11 includes a control unit 21, a display unit 22, an imaging unit 23, and a lens 24. The sensor device 12 includes a sensor unit 31 and a communication unit 32 .

[0026] The display device 11 is configured to be able to be worn on the head of a human body. For example, a glasses-type display device or a goggle-type display device The image may be viewed with one eye.

[0027] The sensor device 12 is configured to be wearable on the human body. FIG. 1A shows an example in which the sensor device 12 is configured to be attached to the eyeball of a human body. The sensor device 12 shown in FIG. 1A can also be used as a contact lens. The configuration of the sensor device 12 is not limited to this, and can take various forms.

[0028] The display unit 22 of the display device 11 has a plurality of pixels and has the function of displaying an image. A pixel has one or more display elements. The display elements include light-emitting elements, liquid crystal elements, microphones, and the like. Capsules, electrophoretic devices, electrowetting devices, electrofluidics Various display elements can be used, such as LEDs, electrochromic elements, and MEMS elements. do.

[0029] In particular, by using a light-emitting element as the display element of the display unit 22, high contrast can be obtained. This allows for the display of more realistic images. In particular, organic EL elements, LED elements, inorganic EL elements, etc. can be used. It is preferable to use a child.

[0030] LED elements range from large to macro LEDs (also called giant LEDs), There are mini LEDs, micro LEDs, etc. Here, the dimension of one side of the LED chip is 1 mm. Macro LEDs are those exceeding 100μm and those less than 1mm, and mini LEDs are those exceeding 100μm and 1mm, respectively. Those with a diameter of 0μm or less are called micro LEDs. It is preferable to use micro LEDs. By using micro LEDs, it is possible to achieve extremely high-definition displays. It is possible to realize a display device.

[0031] The higher the resolution of the display unit 22, the better. The pixel density of the display unit 22 is 1000 ppi. or more and 50,000 ppi or less, preferably 2,000 ppi or more and 20,000 ppi or less, more preferably Preferably, 3000 ppi or more and 10000 ppi or less, more preferably, 5000 ppi or less It can be 1 to 10,000 ppi. 00ppi or less, 5500ppi to 6500ppi, or , the pixel density can be 6500 ppi or more and 7500 ppi or less.

[0032] The higher the resolution of the display unit 22, the more preferable it is. Alternatively, the number of pixels in the signal line direction is, for example, 1,000 to 20,000, preferably 200 It can be 0 or more and 10,000 or less, more preferably 3,000 or more and 10,000 or less. When two display units 22 are provided, one for the left eye and one for the right eye, the shape of the display area is set to be close to a square. (The ratio of the length to the width is 0.8 or more and 1.2 or less) shape. When the display area is divided into two parts for the right and left eyes, the shape of the display area should be a horizontally long rectangle (for example, For example, the ratio of the width to the length is preferably 1.5 or more and 5.0 or less. The display unit 22 may be adapted to a television standard having an aspect ratio of 16:9. In this case, the resolution can be FHD, 4K2K, or 8K4K. do.

[0033] The display unit 22 may be a so-called see-through panel that transmits external light. This allows the display device 11 to be used as a device for AR. The device 11 may not be provided with the imaging unit 23 .

[0034] The imaging unit 23 is provided at a position where it can capture an image of the front when the display device 11 is worn. The image captured by the imaging unit 23 can be displayed on the display unit 22 via the control unit 21. .

[0035] A camera can be suitably used as the imaging unit 23. In particular, the number of pixels of the display unit 22 is preferably the same as or equal to the number of pixels of the display unit 22. It is preferable that the number of pixels is equal to or greater than this.

[0036] The control unit 21 has a function of generating and outputting an image signal S1 to be supplied to the display unit 22. The control unit 21 has a function of controlling the operation of the imaging unit 23 and a function of converting the image signal input from the imaging unit 23 into a digital signal. The control unit 21 has a function of acquiring the signal 3 S2 supplied from the sensor device 12. 3, and a function to output an image to the display unit 22 based on the information contained in the signal 33. It has the function of generating an image signal S1.

[0037] For example, the control unit 21 may perform the following based on the image data captured by the imaging unit 23 and included in the image signal S2. Based on this, the image captured by the imaging unit 23 can be displayed on the display unit 22 with almost no delay. The control unit 21 also controls the image generated based on the information acquired by the sensor device 12, A composite image is generated by combining the image included in the image signal S1 with the image included in the image signal S2, and the composite image is displayed on the display unit 22. This allows for so-called AR display or MR (Mixed Reality) display. This makes it possible to display virtual reality (also known as mixed reality).

[0038] The sensor device 12 includes a sensor unit 31 and a communication unit 32. The information acquired by the sub-unit 31 is transmitted to the control unit 21 of the display device 11 via the communication unit 32. It is possible.

[0039] The sensor unit 31 can have a sensor that can acquire various biological information. The sensor section is made up of a contact sensor that touches the human body, an optical sensor that uses light, and an electronic sensor that detects the human body. Electrical sensors that use signals, sensors that can acquire the components and properties of body fluids (such as tears and sweat), A sensor or the like can be applied.

[0040] For example, the sensor device 12 shown in FIG. 1A detects salt, glucose, and the like from tears using the sensor unit 31. For example, the concentration of glucose measured by the sensor unit 31 can be measured. From the concentration, the user's blood glucose level can be estimated.

[0041] The communication unit 32 transmits a signal 33 including information acquired by the sensor unit 31 to the display device 11. The communication unit 32 has a configuration including an antenna, a signal generation circuit, a modulation circuit, etc. It can be said that:

[0042] FIG. 1A clearly shows the user's eyeball 41. For ease of understanding, Although a gap is shown between the eyeball 41 and the sensor device 12, in reality the sensor device 12 is It can be worn so that it touches 1.

[0043] The lens 24 is provided between the display unit 22 and the sensor device 12 and has a function of adjusting the focus. The distance between the display unit 22 and the eyeball 41 is sufficient, and the focus adjustment function is available. When the lens 24 is not required or when the sensor device 12 has a focus adjustment function, It is also possible to adopt a configuration in which this is not provided.

[0044] The user can see the image displayed on the display unit 22 through the sensor device 12 and the lens 24. You can see it.

[0045] By wearing the display device 11 on the head and the sensor device 12 on the eyeball 41, the communication unit 2 The communication distance between the communication unit 32 and the communication unit 5 is extremely short. Since the size can be reduced, the power consumption of the composite device 10 can be reduced. Because the power is so low, the health effects of communication radio waves can be made negligible.

[0046] FIG. 1B shows a block diagram of composite device 10.

[0047] The control unit 21 includes a communication unit 25 and an image generation unit 26. An image signal S2 is input from the image sensor 23, and a signal 33 is input from the sensor device 12. An image signal S0 may be input from the outside. Number S1 is output.

[0048] The communication unit 25 receives the signal 33 transmitted from the sensor device 12 and The communication unit 25 has a function of outputting the data to the image generation unit 26. The communication unit 25 includes, for example, an antenna, a demodulator, and the like. The configuration may include a circuit or the like.

[0049] In addition, when the communication unit 25 and the communication unit 32 are configured to be capable of mutual communication, However, it may be configured to include a demodulation circuit and a modulation circuit.

[0050] The communication unit 25 is in a stopped state (a sleep state) during a period when the signal 33 is not input. At this time, the control unit 21 has a function of switching to the signal 33. The analog circuit has a function of waking up the communication unit 25 from a sleep state based on the input. By putting the communication unit 25, including the communication unit 25, into a sleep state during a period when operation is not required, the power consumption of the control unit 21 is reduced. This allows for a significant reduction in power consumption, and also allows for a reduction in size and weight of the display device 11. .

[0051] FIG. 2 is a timing chart showing the signal 33 and the operation of the communication unit 25. One of the signals 33 includes a pulse signal 33a and a data signal 33b. As shown in FIG. 2, the signal 33 transmitted from the communication unit 32 is composed of a pulse signal 33a and a signal The set 33b is a signal that is output intermittently.

[0052] The operation of the communication unit 25 is roughly divided into a recovery operation 25a, a processing operation 25b, and a sleep operation 25c. When the control unit 21 receives the pulse signal 33a, The communication unit 25 controls the communication unit 25 to execute the recovery operation 25a. After the recovery operation 25a, the communication unit 25 returns from the sleep state. 25b demodulates the received signal 33b to generate data and outputs it to the image generating unit 26 When the output is completed, the communication unit 25 goes through a sleep operation 25c and then goes to a sleep state.

[0053] Here, in FIG. 2, the operating period Tact and the hiatus period T off This indicates the period of rest. T off However, during the operation period T act The longer the connection, the more power consumption can be reduced. For example, the sampling frequency required to monitor changes in a person's biological information is 10 Hz or less, 5 Hz or less, 1 Hz or less, or 0.1 Hz or less, so that the reception of the signal 33 The frequency can be set to the same level. act is very short time (e.g. Therefore, the communication unit 25 can perform the most of the period can be put into a dormant state.

[0054] The image generating unit 26 shown in FIG. 1B receives the data contained in the signal 33 from the communication unit 25. Then, image data is generated based on the data, and the image data and the image data input from the imaging unit 23 are used. A function to generate composite image data by combining the image data included in the input image signal S2. The control unit 21 generates an image signal S1 including the composite image data, and displays the image signal S1 on the display unit 2. Output to 2.

[0055] In addition, in the case where the image signal S0 is input from the outside, the image generating unit 26 receives the image signal S Image data contained in signal 33 and image data generated based on the data contained in signal 33. The image processing device may have a function of generating composite image data by combining the above.

[0056] The image generating unit 26 also generates a signal from the image data included in the image signal S1 and the image data included in the image signal S0. The image data generated based on the data included in the signal 33 is synthesized. The image processing device may have a function of generating composite image data.

[0057] [About the sensor device] In the above, the sensor device 12 has been described as being configured to be attached to the eyeball of a human body. The sensor device 12 can take a variety of forms. Other examples of the sensor device 12 are described below.

[0058] Figure 3A shows a sensor device 12 configured for application to the skin. 1 shows a state in which the sensor device 12 is attached to an arm 42. The sensor device 12 Each of the sensor devices 12 has a chip-shaped sensor unit 31 and a communication unit 32. The exterior body of the sensor device 12 is thin. It is preferable that the material is a thin sheet-like material, and that the material is flexible or stretchable. The sensor device 12 may be configured to have an adhesive on the surface that comes into contact with the skin.

[0059] FIG. 3B shows a sensor device 12 configured to be worn around an arm 42 (wrist). The sensor device 12 includes at least a sensor unit 31 and a communication unit 32. The sensor device 12 shown in FIG. 3B may also include an information display unit. 2 may function as a wristwatch-type information terminal device.

[0060] FIG. 3C shows the sensor device 12 configured to be worn on a finger 43. The sensor device 12 shown in FIG. 1C includes at least a sensor unit 31 and a communication unit 32. The sensor device 12 may be provided with an information display unit. For example, the sensor device 12 may be a ring-shaped information terminal. The sensor device 12 may also function as a detector. By doing so, it may be used as an input device using gestures.

[0061] FIG. 3D shows a sensor device 12 configured to be worn on the upper arm 44 of a user 40. The sensor device 12 includes at least a sensor unit 31 and a communication unit 32. The device 12 is made of a stretchable material and has a cylindrical shape or a cylindrical shape with a part missing. (i.e., the cross section is roughly C-shaped).

[0062] FIG. 3E shows sensor device 12 attached to the inside of clothing 45 of user 40. The sensor device 12 has at least a sensor unit 31 and a communication unit 32. When the clothing 45 is worn as the innermost layer, a part of the sensor device 12 comes into contact with the skin. Furthermore, the sensor device 12 is preferably configured to detect whether the user 40 is wearing other clothing inside the clothing 45. It is preferable that even when the user is wearing other clothing, the user's biometric information can be acquired through the other clothing. The sensor device 12 may be attached to the outside of the clothing 45 or may be attached to the inside of the clothing 45. It may also be configured to be mounted internally.

[0063] Here, the sensor device 12 measures blood glucose level, heart rate, pulse rate, blood pressure, body temperature, oxygen saturation, and neutral It is preferable that the blood glucose level be detected by the blood glucose concentration detection device. It can be estimated by measuring the glucose concentration in body fluids, as shown in

[0064] In addition, arteries (arterioles) respond differently to infrared or visible light depending on the fluctuation of blood oxygen saturation. This change in reflectance can be measured optically. That is, by obtaining the time modulation of the blood oxygen saturation, pulse wave information can be obtained. This allows the user's heart rate to be measured. uses visible light to detect blood triglyceride levels, blood glucose levels or the dermis. It is possible.

[0065] In addition, the sensor unit 31 is configured to include electrodes that come into contact with the skin, so that an electrocardiogram can be obtained. It can be measured.

[0066] Blood pressure is also measured by the difference in timing between the electrocardiogram and the pulse wave (the length of the pulse wave propagation time). ) can be calculated. When blood pressure is high, the pulse wave propagation time is short, and conversely, when blood pressure is low, the pulse wave propagation time is short. The propagation time is longer. In addition, the relationship between the heart rate and blood pressure calculated from the electrocardiogram and pulse wave It can also estimate the user's physical condition. For example, if both the heart rate and blood pressure are high, it indicates stress. Conversely, if both the heart rate and blood pressure are low, it can be assumed that the person is in a relaxed state. It can be estimated that if the patient continues to have low blood pressure and a high heart rate, may be a sign of heart disease.

[0067] It should be noted that the sensor device 12 or the display device 11 may be provided with a means for acquiring other biological information. For example, in addition to biometric information such as electrocardiogram, blood pressure, and body temperature, facial expression, complexion, There is superficial biological information such as pupils. In addition, the number of steps, exercise intensity, elevation change, and diet ( Information on calorie intake and nutrients is also important for health care. By using this information, it is possible to manage your overall health condition, and you can manage not only your daily health but also your injuries. It also leads to early detection of disease.

[0068] In addition, the sensor device 12 is a GPS (Global Positioning System) The device may have a global positioning system (GPS) and be configured to be able to acquire location information. In addition, the sensor device 12 may have a function for electronic payment.

[0069] [Image example] Below, an example of an image that can be presented to the user by the multifunction device 10 will be described. and explain.

[0070] FIG. 4A shows an example of an image 50a that appears in the field of view of a user eating a meal. In the figure, image information 51a is shown superimposed on the actual image captured by the imaging unit 23. The image information 51a shown in 4A includes an icon image (image resembling a sugar cube) intended to indicate a blood glucose level. , a comment to warn the user that their blood glucose level is high, and the estimated blood glucose level. (CAUTION!! 140mg / dL). The user can view the image information 51 By using a, you can recognize that your blood sugar level is high, reduce the amount of food you eat, and cancel your order of dessert. You can take action such as canceling your appointment or ordering a drink that will help keep your blood sugar levels down.

[0071] FIG. 4B shows an example of an image 50b as seen by a user hiking. Image information 51b is shown in the image 50b. The image information 51b includes an image of the heart rate. The icon image (image resembling a heart) and a message to warn the user that their heart rate is high The comment and the measured heart rate are displayed. (CAUTION!! 1 30 bpm). The user can check his / her own heart rate through the image information 51b. You can take action such as taking a break or slowing down your walking speed.

[0072] FIG. 4C shows an example of an image 50c that appears in the user's field of view when the user calls and scolds a subordinate. Image information 51c is shown in image 50c. The image information 51c includes blood pressure. The intended icon image (a heart and electrocardiogram image) and a message to the user informing them that their blood pressure is high A warning comment and estimated blood pressure values ​​are provided (CAUTION!! 160mmHg). The user can see from the image information 51c that he is in a state of extreme arousal. I can be aware of this, take a deep breath to control my anger, and reconsider how I treat my subordinates. You can take actions such as:

[0073] In the above example, a comment is shown to warn the user. For example, in the situation shown in FIG. 4C, a message to take a deep breath may be displayed. Prompting comments, animated images, etc. may be presented.

[0074] [Variations] Below, a modification of the above configuration example will be described.

[0075] FIG. 5A shows a schematic diagram of the composite device 10a, and FIG. 5B shows a block diagram of the composite device 10a. The figures are shown respectively.

[0076] The composite device 10a includes a sensor device 12a having an image display function and an information processing device 13. and,

[0077] The sensor device 12a includes a sensor unit 31, a communication unit 32, and a display unit 34. The display unit 34 has a function of displaying an image. A can be preferably used.

[0078] The communication unit 32 transmits a signal 33 including the information acquired by the sensor unit 31 to the information processing device 13. It also has the function of demodulating the signal 27 received from the information processing device 13 and transmitting the signal 27 3. The image signal included in the image signal is output to the display unit 34.

[0079] The display unit 34 can display an image based on the image signal input from the communication unit 32. Cut.

[0080] The information processing device 13 includes a control unit 21. The control unit 21 includes a communication unit 25 and an image generation unit 26 and has.

[0081] The communication unit 25 receives the signal 33 transmitted from the sensor device 12a and The communication unit 25 has a function of outputting the data to the image generation unit 26. 6, and a signal 27 including an image signal S1 is transmitted to the sensor device 12a. do.

[0082] When the data included in the signal 33 is input from the communication unit 25, the image generating unit 26 generates the data. The image sensor 21 has a function of generating an image signal S 1 based on the image data and outputting the image signal S 1 to the communication unit 25 .

[0083] The user superimposes the image displayed on the display unit 34 on the transmitted image of the sensor device 12a. The composite device 10a can present an AR display to the user. In addition, the display unit 34 may be configured to be opaque to light, so that a VR display can be presented to the user. stomach.

[0084] By adopting such a configuration, the configuration of the composite device 10a can be extremely simplified. In addition, the information processing device 13 can be easily made small and lightweight, so it can be easily carried in a pocket or bag. In this case, no device needs to be worn on the head, so it is not bothersome to the user. This makes it possible to create a device that does not feel clumsy.

[0085] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0086] (Embodiment 2) In this embodiment, a display device that can be used in a composite device of one embodiment of the present invention will be described. An example of the configuration of the electronic device will be described.

[0087] 6A shows a perspective view of an eyeglass-type electronic device 900. The electronic device 900 has a pair of displays. A panel 901, a pair of housings (a housing 902a and a housing 902b), a pair of optical members 903, It has a pair of mounting portions 904 and the like.

[0088] The electronic device 900 displays an image displayed on the display panel 901 in the display area 906 of the optical member 903. In addition, since the optical member 903 is translucent, the user can project an image. The image displayed in the display area 906 is superimposed on the transmitted image viewed through the optical member 903. Therefore, electronic device 900 is an electronic device capable of AR display.

[0089] One of the housings 902a is provided with a camera 905 that can capture images of the front. The housing 902a includes a wireless communication device 907, and the housings 902a and 902b include a In addition, instead of the wireless communication device 907, or In addition to the receiver 907, a connector that can be connected to a cable that supplies video signals and power potential is also provided. The housing 902a or the housing 902b may be provided with a sensor such as a gyro sensor. The speed sensor detects the direction of the user's head and displays an image according to that direction. It can also be displayed in the display area 906. In addition, the housing 902a or the housing 902b has a backlight. It is preferable that the device is equipped with a battery, which can be charged wirelessly or by wire. Cut.

[0090] The housing 902b also includes a processor 908. The electronic device 900 includes a camera 905, a wireless communication device 907, a pair of display panels 901, and other components. It has functions such as controlling various components and generating images. 08 may have a function to generate a composite image for AR display.

[0091] The wireless communication device 907 can communicate data with external devices. The data transmitted from the unit is output to the processor 908, and the processor 908 Image data for AR display can also be generated based on the Examples of data include image data and biometric information sent from a biosensor device. Data containing such information may be included.

[0092] Next, a method for projecting an image onto the display area 906 of the electronic device 900 will be described with reference to FIG. 6B. The display panel 90 is mounted inside the housing 902 (housing 902a and housing 902b). 1, a lens 911, and a reflector 912 are provided. The portion corresponding to 06 has a reflecting surface 913 that functions as a half mirror.

[0093] Light 915 emitted from the display panel 901 passes through the lens 911 and strikes the reflector 912. Inside the optical member 903, the light 915 is reflected by the optical element 903. The light is repeatedly totally reflected at the end surface of the material 903 and reaches the reflecting surface 913. As a result, the user can see the light 915 reflected by the reflective surface 913 and the optical Both the reflected light 916 and the transmitted light 916 that has passed through the member 903 (including the reflecting surface 913) can be seen. do.

[0094] FIG. 6B shows an example in which the surface of the reflector 912 and the reflecting surface 913 each have a curved surface. This allows for greater freedom in optical design than when these are flat surfaces. This allows the thickness of the optical member 903 to be reduced. The projection surface 913 may be a flat surface.

[0095] The reflector 912 can be a member having a mirror surface, and preferably has high reflectivity. It is also preferable to use a half mirror that utilizes the reflection of a metal film as the reflecting surface 913. However, if a prism using total reflection is used, the transmittance of the transmitted light 916 can be increased. can be done.

[0096] Here, the housing 902 controls the distance between the lens 911 and the display panel 901 and the angle between them. It is preferable that the lens has a mechanism for adjusting the focus, enlarging or reducing the image. For example, it is possible to reduce the size of either the lens 911 or the display panel 901. Alternatively, both may be configured to be movable in the direction of the optical axis.

[0097] Furthermore, the housing 902 preferably has a mechanism that allows the angle of the reflector 912 to be adjusted. By changing the angle of the reflector 912, the position of the display area 906 where the image is displayed can be changed. This makes it possible to display the display area 90 at the optimal position according to the position of the user's eyes. It is possible to place 6.

[0098] The display device or display module of one embodiment of the present invention is applied to the display panel 901. Therefore, the electronic device 900 can be made to be capable of displaying images with extremely high definition. can.

[0099] 7A and 7B are perspective views of a goggle-type electronic device 950. 7A is a perspective view of the front, top, and left side of electronic device 950; FIG. 7B is a perspective view of the back of electronic device 950; FIG.

[0100] The electronic device 950 includes a pair of display panels 951, a housing 952, a pair of mounting portions 954, and a buffer. The pair of display panels 951 includes a housing 952 and a pair of lenses 956. They are provided at positions inside the lens 956 where they can be seen through the lens 956.

[0101] The electronic device 950 is an electronic device for VR. A user wearing the electronic device 950 The image displayed on the display panel 951 can be viewed through the lens 956. By displaying different images on the pair of display panels 951, a 3D display using parallax can be achieved. Also, a waterproof function can be provided to the housing 952 of the electronic device 950, The device 950 may be configured to be usable underwater. In this case, the shape of the housing 952 may be streamlined. This is preferable because it reduces water resistance and allows the swimmer to swim faster.

[0102] An input terminal 957 and an output terminal 958 are provided on the rear side of the housing 952. An input terminal 957 receives a video signal from a video output device or the like, and a video signal from a buffer provided in the housing 952. A cable that supplies power for charging a battery can be connected. For example, the 958 functions as an audio output terminal, allowing you to connect earphones or headphones. It is possible to output audio data by wireless communication or to use an external When audio is output from the external video output device, the audio output terminal does not need to be provided.

[0103] The housing 952 is provided with a camera 959 that can capture images of the front. The display 950 displays an image captured by a camera 959 or a composite image using the image. The electronic device 950 can perform AR display and MR display in addition to VR display. Cut.

[0104] The housing 952 also includes a processor 961 and a wireless communication device 962. The processor 961 controls the pair of display panels 951, the camera 959, the wireless communication device 962, etc. The processor 950 can control various components of the electronic device 950. 961 allows the generation of an image to be displayed on the display panel 951 .

[0105] In addition, the wireless communication device 962 can communicate data with external devices. For example, data transmitted from an external device is output to the processor 961, and the processor 961 Based on the data, image data for VR display, AR display, or MR display can be generated. Examples of data sent from outside include image data and data from a biosensor device. Examples of such data include data containing biometric information transmitted from a device.

[0106] The housing 952 also has a lens 956 and a display panel 951 that move in response to the position of the user's eyes. It is recommended that the left and right positions of these be adjusted to suit the user's needs. It is also preferable to adjust the focus by changing the distance between the lens 956 and the display panel 951. It is preferable that the device has a mechanism for adjusting the temperature.

[0107] The display device or the display module of one embodiment of the present invention is applied to the display panel 951. Therefore, the electronic device 950 can display images with extremely high definition. This allows the user to feel a high level of immersion.

[0108] The cushioning member 955 is the part that comes into contact with the user's face (forehead, cheeks, etc.). 5 adheres closely to the user's face, preventing light leakage and enhancing the sense of immersion. The cushioning member 955 can protect the user from the shock when the user wears the electronic device 950. It is preferable to use a soft material so that it can fit snugly against the face, such as rubber or silicone rubber. Materials such as urethane and sponge can be used. When using a device covered with leather (natural or synthetic leather), the user's face and the cushioning material 955, it is difficult for gaps to form between them, and light leakage can be suitably prevented. The material used not only feels good on the skin, but also keeps the user cool when worn in cold weather. It is preferable because it does not feel uncomfortable on the user's skin. It is preferable that the touchable parts are removable, as this makes cleaning and replacement easier. It's nice.

[0109] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0110] (Embodiment 3) In this embodiment, a configuration example of a display panel that can be applied to a composite device of one embodiment of the present invention will be described. The display panel exemplified below can achieve extremely high definition, The present invention can be suitably used in a display unit of a display device or a sensor device.

[0111] [Pixel configuration example] An example of a pixel arrangement method suitable for a high-definition display panel will be described below.

[0112] For example, in the configuration shown below, the pixel including the light-emitting element has a resolution of 1000 ppi or more and 50000 ppi or less. pi or less, preferably 2000 ppi or more and 20000 ppi or less, more preferably 300 0 ppi or more and 10,000 ppi or less, more preferably 5,000 ppi or more and 10,000 ppi or less It is possible to realize a display device arranged in the display area with a resolution (pixel density) of 100 ppi or less. Typically, pixel densities are between 4500ppi and 5500ppi, and 5500ppi Pixel density of 6500ppi or more and less than 7500ppi It can be pixel density.

[0113] [Pixel circuit configuration example] FIG. 8A shows an example of a circuit diagram of the pixel unit 70. The pixel unit 70 includes two pixels ( The pixel unit 70 is composed of a pixel 70a and a pixel 70b. Wire 91b, wire 92a, wire 92b, wire 92c, wire 92d, wire 93a, wire 93b , wiring 93c, etc. are connected.

[0114] The pixel 70a includes sub-pixels 71a, 72a, and 73a. The pixel 71 includes subpixels 71b, 72b, and 73b. The sub-pixels 72a and 73a are respectively connected to the pixel circuits 81a, 82a, and 8 The sub-pixels 71b, 72b, and 73b each have a pixel circuit. The pixel circuit 81b includes a pixel circuit 82b and a pixel circuit 83b.

[0115] Each sub-pixel has a pixel circuit and a display element 60. For example, the sub-pixel 71a has a pixel circuit 81a and a display element 60. Here, the display element 60 is a light-emitting element such as an organic EL element. This shows the case where an element is used.

[0116] The wiring 91a and the wiring 91b each function as a scanning line (also called a gate line). The wiring 92a, the wiring 92b, the wiring 92c, and the wiring 92d are signal lines (source lines). The wiring 93a, wiring 93b, and wiring 93c function as a signal line or a data line. The wiring 93c has a function of supplying a potential to the display element 60.

[0117] The pixel circuit 81a is electrically connected to the wiring 91a, the wiring 92a, and the wiring 93a. The pixel circuit 82a is electrically connected to the wiring 91b, the wiring 92d, and the wiring 93a. The pixel circuit 83a is electrically connected to the wiring 91a, the wiring 92b, and the wiring 93b. The pixel circuit 81b is electrically connected to the wiring 91b, the wiring 92a, and the wiring 93b. The pixel circuit 82b is electrically connected to the wiring 91a, the wiring 92c, and the wiring 93c. The pixel circuit 83b is electrically connected to the wiring 91b, the wiring 92b, and the wiring 93c. It continues.

[0118] As shown in FIG. 8A, two gate lines are connected to one pixel, The number of source lines per pair can be halved compared to the stripe arrangement. It is possible to reduce the number of ICs used in the source driver circuit by half, thereby reducing the number of components. It is possible.

[0119] In addition, a single wiring that functions as a signal line is configured to connect pixel circuits corresponding to the same color. For example, the potential is adjusted to correct the luminance variation between pixels. When a signal obtained by the above method is supplied to the wiring, the correction value may differ significantly for each color. Therefore, all pixel circuits connected to one signal line must be pixel circuits that correspond to the same color. This makes it possible to easily perform correction.

[0120] Each pixel circuit includes a transistor 61, a transistor 62, a capacitance element 63, and For example, in the pixel circuit 81a, the gate of the transistor 61 is connected to the wiring 91. a, and one of the source and drain is electrically connected to the wiring 92a, and the source The other of the drains is electrically connected to the gate of the transistor 62 and one of the electrodes of the capacitor 63. The transistor 62 has one of its source and drain connected to one of the display elements 60. The other of the source and drain is electrically connected to the other electrode of the capacitor 63, The other electrode of the display element 60 is electrically connected to the wiring 93a. It is electrically connected to the wiring that is connected to the

[0121] In addition, in the other pixel circuits, the gate of the transistor 61 is connected as shown in FIG. a wiring to which one of the source and the drain of the transistor 61 is connected, and a capacitor element The other electrode of the pixel circuit 63 is connected to a different wiring, and the other electrode of the pixel circuit 63 is connected to a different wiring. .

[0122] In FIG. 8A, the transistor 61 functions as a selection transistor. The transistor 62 is connected in series with the display element 60 and controls the current flowing through the display element 60. The capacitor 63 has a function of reducing the potential of the node to which the gate of the transistor 62 is connected. It should be noted that the transistor 61 has a function of holding the leakage current and the transistor When the leakage current through the gate of the transistor 62 is extremely small, the capacitance element 63 is not required. It does not have to be provided graphically.

[0123] Here, as shown in FIG. 8A, the transistors 62 are each electrically connected to a first It is preferable to have a structure having a first gate and a second gate. By adopting this configuration, the current that can be passed through the transistor 62 can be increased. In particular, in a high-definition display device, the size of the transistor 62, particularly the channel width, This is preferable because the current can be increased without increasing the capacitance.

[0124] The transistor 62 may have one gate. This simplifies the process compared to the above because the process of forming the second gate is unnecessary. Alternatively, the transistor 61 may have two gates. By using this structure, the size of each transistor can be reduced. The first gate and the second gate of the transistor are electrically connected to each other. Alternatively, one of the gates may be electrically connected to a different wiring. In this case, the threshold voltage of the transistor can be controlled by changing the potential applied to the wiring. It can be controlled.

[0125] In addition, one of the pair of electrodes of the display element 60 is electrically connected to the transistor 62. , which corresponds to a pixel electrode. In FIG. 8A, the transistor 62 of the display element 60 and the The electrode connected to the cathode is the cathode, and the opposite electrode is the anode. This is particularly effective when the transistor 62 is an n-channel transistor. When the transistor 62 is on, the potential applied by the wiring 93a becomes the source potential. Therefore, the current flowing through the transistor 62 is constant regardless of variations or fluctuations in the resistance of the display element 60. Furthermore, the transistors included in the pixel circuits are p-channel A transistor of the type described above may also be used.

[0126] [Example of display element configuration] FIG. 8B is a schematic top view showing an example of a method for arranging display elements. A schematic top view of the 1000mm square is shown.

[0127] The pixel 70a has a display element R1, a display element G1, and a display element B1. The display element R1 includes a display element R2, a display element G2, and a display element B2. The display element R2 is a display element that exhibits red, and the display elements G1 and G2 are display elements that exhibit green. The display element B1 and the display element B2 are display elements that exhibit blue color.

[0128] When we look at the display elements R1 and R2, they are arranged in a zigzag pattern in the vertical direction. Similarly, the display elements G1 and G2, and the display elements B1 and B2 are also zigzag. By adopting such a configuration, the viewing angle dependency is improved, and the This provides the effect of preventing deviations in chromaticity and luminance when viewed from an oblique direction.

[0129] The above is a description of an example of the pixel configuration.

[0130] [Display module configuration example] A structural example of a display module according to one embodiment of the present invention will be described below.

[0131] 9A is a perspective schematic diagram of the display module 280. The display module 280 The device includes an FPC.

[0132] The display module 280 has a substrate 201 and a substrate 202. The display unit 281 is an area in the display module 280 where an image is displayed. This is an area where light from each pixel provided in a pixel section 284 (described later) can be seen.

[0133] 9B is a perspective view showing a schematic configuration of the substrate 201 side. A circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283. 84 are stacked. Also, the portion of the substrate 201 that does not overlap with the pixel portion 284 is In addition, it has a terminal portion 285 for connecting to the FPC 290. In addition, the terminal portion 285 and the circuit portion 282 is electrically connected by a wiring section 286 made up of a plurality of wires.

[0134] The pixel section 284 has a plurality of pixels 284a arranged in a matrix. 2 shows an enlarged view of one pixel 284a. The pixel 284a includes a display element R1, a display element The pixel has a display element G1, a display element B1, a display element R2, a display element G2, and a display element B2. 284a corresponds to the pixel unit 70 illustrated in FIGS. 8A and 8B.

[0135] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged in a matrix. The pixel circuit 283a is a circuit that controls the light emission of six display elements included in one pixel 284a. One pixel circuit 283a is provided with six circuits that control the light emission of one display element. For example, the pixel circuit 283a may have one pixel for each display element. A selection transistor, one current control transistor (drive transistor), and a capacitance element In this case, the gate of the selection transistor A gate signal is input to the MOSFET, and a source signal is input to either the source or the drain. This realizes an active matrix display device.

[0136] The circuit section 282 has a circuit for driving each pixel circuit 283a of the pixel circuit section 283. For example, it is preferable to have a gate line driving circuit, a source line driving circuit, etc. It may also have a circuit, a memory circuit, a power supply circuit, etc.

[0137] The FPC 290 is a wiring for supplying a video signal and a power supply potential to the circuit section 282 from the outside. An IC may also be mounted on the FPC290.

[0138] The display module 280 has a pixel circuit section 283, a circuit section 282, etc. below a pixel section 284. Since it can be configured as a laminated structure, the aperture ratio (effective display area ratio) of the display unit 281 can be extremely increased. For example, the aperture ratio of the display unit 281 can be set to 40% or more and less than 100%. Preferably, it is 50% or more and 95% or less, and more preferably, it is 60% or more and 95% or less. In addition, the pixels 284a can be arranged at an extremely high density, and the resolution of the display unit 281 can be improved. For example, the display unit 281 can display a resolution of 1000 ppi or more, 000 ppi or less, preferably 2000 ppi or more and 20000 ppi or less, more preferably is 3000 ppi or more and 10000 ppi or less, more preferably 5000 ppi or more and 1 It is preferable that the pixel 284a be arranged at a resolution (pixel density) of 0000 ppi or less. Typically, pixel densities between 4500ppi and 5500ppi are used, and those above 5500ppi are used. Pixel density of 6500ppi or less, or 6500ppi to 7500ppi It can be density.

[0139] Such a display module 280 has extremely high resolution, and is therefore suitable for head-mounted displays. It can be used effectively in VR devices such as displays, or in glasses-type AR devices. For example, in the case of a configuration in which the display unit of the display module 280 is viewed through a lens, However, the display module 280 has an extremely high-definition display section 281, so it is difficult to display with a lens. Even when the display is enlarged, the pixels are not visible, providing a highly immersive display. The module 280 is not limited to this, and is preferably used in electronic devices having a relatively small display unit. For example, it can be suitably used in the display of a wearable electronic device such as a wristwatch-type electronic device. You can be there.

[0140] This embodiment may be combined, at least in part, with other embodiments described in this specification. They can be implemented in combination.

[0141] (Embodiment 4) In this embodiment, an example of a CPU applicable to a composite system of one aspect of the present invention will be described. The CPU exemplified below can be suitably used particularly for a control unit included in a display device.

[0142] <Configuration of CPU> The semiconductor device 5400 shown in FIG. 10 includes a CPU core 5401, a power management unit 5421, and a peripheral circuit 5422. The power management unit 5421 includes a power controller 5402 and a power switch 5403. The peripheral circuit 5422 includes a cache 5404 having a cache memory, a bus interface (BUS I / F) 5405, and a debug interface (Debug I / F) 5406. The CPU core 5401 includes a data bus 5423, a control unit (Control Un it) 5407, a PC (program counter) 5408, pipeline registers (Pip eline Register) 5409, pipeline registers (Pipeline Register) 5410, an ALU (arithmetic logic unit) 5411, and a register file 5412. The exchange of data between the CPU core 5401 and the peripheral circuit 5422 such as the cache 5404 is performed via the data bus 5423. The semiconductor device (cell) includes a power controller 5402, a control unit 5407, and many others.

[0143] ​​​It can be applied to many logic circuits. In particular, it can be configured using standard cells. As a result, the small semiconductor device 5400 can be applied to all logic circuits that can be implemented. In addition, a semiconductor device 5400 that can reduce power consumption can be provided. In addition, it is possible to provide a semiconductor device 5400 capable of improving the operating speed. Therefore, it is possible to provide a semiconductor device 5400 capable of reducing fluctuations in the temperature.

[0144] The semiconductor device (cell) is made up of a p-channel Si transistor and an oxide semiconductor (preferably a transistor including an oxide containing In, Ga, and Zn in a channel formation region, By applying the semiconductor device (cell) to the semiconductor device 5400, a small semiconductor device 540 0 can be provided. In addition, a semiconductor device 5400 capable of reducing power consumption can be provided. In addition, it is possible to provide a semiconductor device 5400 that can improve the operating speed. By using only p-channel transistors, manufacturing costs can be kept low.

[0145] The control unit 5407 includes a PC 5408, a pipeline register 5409, and a pipeline register 5408. Register 5410, ALU 5411, register file 5412, cache 5404, buffer interface 5405, debug interface 5406, and power control By controlling the operation of the controller 5402 in an integrated manner, the input application and other processes can be It has the ability to decode and execute instructions contained in the program.

[0146] The ALU 5411 has the function of performing various arithmetic operations such as arithmetic operations and logical operations.

[0147] The cache 5404 has a function of temporarily storing frequently used data. PC5408 is a register that has the function of storing the address of the next instruction to be executed. Although not shown in FIG. 10, the cache 5404 includes a cache memory operation A cache controller is provided to control the

[0148] The pipeline register 5409 is a register that has the function of temporarily storing instruction data. It is Ta.

[0149] The register file 5412 has a plurality of registers including general-purpose registers. Data read from the on-chip memory or data obtained as a result of the ALU5411 calculation It is possible to store data, etc.

[0150] The pipeline register 5410 stores data used in the arithmetic processing of the ALU 5411, has the function of temporarily storing data obtained as a result of the ALU5411 arithmetic processing. It is a register.

[0151] The bus interface 5405 is connected to the semiconductor device 5400 and the outside of the semiconductor device 5400. It functions as a data path between various devices. The source 5406 is used to input instructions for controlling debugging to the semiconductor device 5400. It functions as a signal path.

[0152] The power switch 5403 is a power controller 540 It has the function of controlling the supply of power supply voltage to various circuits other than 2. Each circuit belongs to a different power domain, and various circuits that belong to the same power domain are The power switch 5403 controls whether or not the power supply voltage is supplied. The controller 5402 has a function of controlling the operation of the power switch 5403 .

[0153] The semiconductor device 5400 having the above configuration is capable of performing power gating. The flow of power gating operations will be explained using an example.

[0154] First, the CPU core 5401 determines the timing to stop the supply of power voltage by the power controller. Then, the CPU core 5401 sends the power control Next, a command to start power gating is sent to the controller 5402. The various registers and cache 5404 included in 400 start to save data. The power supply to various circuits other than the power controller 5402 of the semiconductor device 5400 is The supply of voltage is stopped by the power switch 5403. Then, an interrupt signal is sent to the power By inputting the data to the controller 5402, the power to the various circuits of the semiconductor device 5400 is supplied. The supply of the power supply voltage is started. The timing at which the supply of power supply voltage is started is determined by the counter, regardless of the input of an interrupt signal. Then, various registers and cache 5404 determine the data. The return of data begins. Instruction execution in the controller 5407 then resumes.

[0155] Such power gating is performed on the entire processor or on a part of the processor. It can be done in one or more logic circuits. This allows for fine-grained control of power consumption in space and time. Reductions can be made.

[0156] When power gating is performed, the information held by the CPU core 5401 and the peripheral circuit 5422 is It is preferable to be able to save information in a short time. This allows the power to be turned on and off in a short time. This makes it possible to achieve greater power saving effects.

[0157] In order to save the information held by the CPU core 5401 and the peripheral circuit 5422 in a short time, It is preferable that the flip-flop circuit can save data within the circuit (backup possible) (This is called a flip-flop circuit.) Also, the SRAM cell can save data within the cell. (called a backup-capable SRAM cell). The flop circuit and the SRAM cell are made of an oxide semiconductor (preferably containing In, Ga, and Zn). It is preferable to have a transistor including a silicon oxide (SiO 2 ) in a channel formation region. The low off-state current of the transistors allows for the creation of backup flip-flop circuits and SRAM cells can retain information for long periods without power. The high switching speed of SRAM cells may be capable of short-term data storage and restoration.

[0158] An example of a flip-flop circuit capable of backing up will be described with reference to FIG.

[0159] The semiconductor device 5500 shown in FIG. 11 is an example of a flip-flop circuit capable of backing up. The semiconductor device 5500 includes a first memory circuit 5501, a second memory circuit 5502, and a The semiconductor device 5500 includes a third memory circuit 5503 and a reading circuit 5504. The potential difference between potential V1 and potential V2 is supplied to the In the following, potential V1 is at a low level, and potential V2 is at a high level. An example of the configuration of the semiconductor device 5500 will be described below, taking the case where the terminal V2 is at a high level as an example. It shall be.

[0160] The first memory circuit 5501 stores the following data during a period when a power supply voltage is supplied to the semiconductor device 5500: When a signal D containing data is input, the data is held. During the period in which the power supply voltage is supplied to the semiconductor device 5500, the first memory circuit 550 A signal Q including the stored data is output from the first memory circuit 55. 01 holds data during the period when power supply voltage is not supplied to the semiconductor device 5500. That is, the first memory circuit 5501 is called a volatile memory circuit. It is possible.

[0161] The second memory circuit 5502 reads the data stored in the first memory circuit 5501. The third memory circuit 5503 has a function of storing (or saving) the second memory. A function to read and store (or save) data held in the memory circuit 5502 The read circuit 5504 has the second memory circuit 5502 or the third memory circuit 5503. The data held in the memory 5503 is read out and stored in the first memory circuit 5501 (or restored). It has the function of

[0162] In particular, the third memory circuit 5503 is configured to store the data when the power supply voltage is not supplied to the semiconductor device 5500. During this period, the data held in the second memory circuit 5502 is read and stored ( or evacuate).

[0163] As shown in FIG. 11, the second memory circuit 5502 includes a transistor 5512 and a capacitor 55 The third memory circuit 5503 includes a transistor 5513 and a transistor 55 15 and a capacitor 5520. The read circuit 5504 includes a transistor 5510 and , transistor 5518, transistor 5509, and transistor 5517. do.

[0164] The transistor 5512 outputs a voltage corresponding to the data stored in the first memory circuit 5501. The transistor 5512 has a function of charging and discharging a load to a capacitor 5519. A charge corresponding to the data held in the memory circuit 5501 is quickly transferred to the capacitor element 5519. It is desirable that the transistor 5512 be capable of charging and discharging. Silicon (preferably polycrystalline silicon, more preferably single crystal silicon) is placed in the channel forming region. It is desirable to include it in the area.

[0165] The transistor 5513 is turned on or off depending on the charge held in the capacitor 5519. The transistor 5515 is turned on when the transistor 5513 is turned on. When the capacitor 5520 is in the ON state, the capacitor 5520 is charged and discharged according to the potential of the wiring 5544. It is desirable that the off-state current of the transistor 5515 be extremely small. The transistor 5515 is formed of an oxide semiconductor (preferably an oxide semiconductor containing In, Ga, and Zn). It is desirable to include a silicon dioxide (SiO 2 ) in the channel forming region.

[0166] To specifically explain the connection relationship of each element, the source and drain of the transistor 5512 One end of the transistor 5512 is connected to the first memory circuit 5501. The other of the drain and the drain is connected to one electrode of a capacitor 5519, the gate of a transistor 5513, and the gate of the transistor 5518. The other electrode of the capacitor 5519 is , and is connected to a wiring 5542. One of the source and drain of the transistor 5513 is , and is connected to a wiring 5544. The other of the source and the drain of the transistor 5513 is , connected to one of the source and drain of the transistor 5515. The other of the source and drain of the capacitor 515 is connected to one electrode of a capacitor element 5520 and a transistor. The other electrode of the capacitor 5520 is connected to the gate of the capacitor 5510. One of the source and drain of the transistor 5510 is connected to a wiring 5541 The other of the source and drain of the transistor 5510 is connected to the transistor The source of the transistor 5518 is connected to one of the source and drain of the transistor 5518. The other of the drain and the source is connected to one of the source and drain of a transistor 5509. The other of the source and drain of the transistor 5509 is connected to the source of the transistor 5517. The source and drain of the transistor 5501 are connected to the first memory circuit 5501. The other of the source and drain of 5517 is connected to a wiring 5540. In this case, the gate of the transistor 5509 is connected to the gate of the transistor 5517. However, the gate of transistor 5509 is not necessarily the gate of transistor 5517. It does not have to be connected to

[0167] A transistor including an oxide semiconductor can be used as the transistor 5515. Since the off-state current of the transistor 5515 is small, the semiconductor device 5500 can be powered for a long period of time. The switching characteristics of the transistor 5515 are To be good, the semiconductor device 5500 can perform high-speed backup and recovery. can.

[0168] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0169] (Embodiment 5) In this embodiment, a display device or a sensor device included in a composite device of one embodiment of the present invention will be described. The following describes an example of the configuration of a semiconductor device that can be applied to the above. The present invention can be applied to a control unit of a display device. The present invention can also be applied to the sensor unit, communication unit, etc. of a sensor device.

[0170] The semiconductor device shown in FIG. 12 includes a transistor 300, a transistor 500, and a capacitor element 14A is a cross-sectional view of the transistor 500 in the channel length direction. 14B is a cross-sectional view of the transistor 500 in the channel width direction, and FIG. 14C is a cross-sectional view of the transistor 500 in the channel width direction. 1 is a cross-sectional view of a transistor 300 in the channel width direction.

[0171] The transistor 500 is a transistor having a metal oxide in a channel formation region (OS transistor). Since the off-state current of the transistor 500 is small, it is By using it in the OS transistors of It is possible to do this.

[0172] The semiconductor device described in this embodiment includes a transistor 300, a transistor 301, and a transistor 302 as shown in FIG. The transistor 500 has a capacitance element 800. The capacitor 800 is provided above the transistor 300 and the transistor 500. It is set up in.

[0173] The transistor 300 is disposed on a substrate 311, and includes a conductor 316, an insulator 315, and a substrate a semiconductor region 313 formed of a part of the semiconductor region 311; The transistor 300 has a resistive region 314a and a low resistive region 314b. The present invention can be applied to transistors and the like included in a memory.

[0174] The transistor 300 is formed by forming a semiconductor region 313 on the upper surface thereof and a channel region thereof as shown in FIG. 14C. The side surfaces in the width direction are covered with the conductor 316 via the insulator 315. By making the resistor 300 a fin type, the effective channel width is increased, and This can improve the on-characteristics of the transistor 300. In addition, the contribution of the electric field of the gate electrode can be increased, thereby improving the off-state characteristics of the transistor 300. .

[0175] The transistor 300 may be either a p-channel type or an n-channel type. .

[0176] The region where the channel of the semiconductor region 313 is formed, the region nearby, the source region, or the drain region In the low resistance region 314a and the low resistance region 314b, which are to be the drain region, silicon It is preferable that the material contains a semiconductor such as a silicon-based semiconductor, and it is preferable that the material contains single crystal silicon. are Ge (germanium), SiGe (silicon germanium), and GaAs (gallium arsenide). Alternatively, the insulating layer 12 may be formed of a material containing gallium aluminum arsenide (GaAlAs), GaAlAs (gallium aluminum arsenide), or the like. It uses silicon in which the effective mass is controlled by applying stress to the crystal lattice and changing the lattice spacing. Alternatively, the transistor 30 may be formed by using GaAs and GaAlAs. 0 stands for HEMT (High Electron Mobility Transistor) ) can also be used.

[0177] The low resistance region 314a and the low resistance region 314b are semiconductor regions applied to the semiconductor region 313. In addition to the material, elements that give n-type conductivity, such as arsenic or phosphorus, or p-type conductivity, such as boron, are added. It contains an element that provides electrical conductivity.

[0178] The conductor 316, which functions as a gate electrode, is made of arsenic, phosphorus, or the like, which provides n-type conductivity. Semiconductor materials such as silicon that contain elements or elements that give them p-type conductivity, such as boron Conductive materials such as aluminum, metal, alloy, or metal oxide materials can be used.

[0179] Since the work function is determined by the material of the conductor, it is necessary to select the material of the conductor. Specifically, the conductor is made of nitride silicon, and the threshold voltage of the transistor can be adjusted. It is preferable to use materials such as tantalum or tantalum nitride. To achieve this, metal materials such as tungsten and aluminum are used as layers for the conductor. It is preferable to use tungsten, in particular, in terms of heat resistance.

[0180] The transistor 300 shown in FIG. 12 is an example, and the structure is not limited to this. An appropriate transistor may be used depending on the structure and driving method. When the transistor 300 is configured with only a transistor, as shown in FIG. The transistor 500 may have the same configuration as that of the transistor 500 using a nitride semiconductor. Details of Star 500 will be described later.

[0181] Over the transistor 300 are insulators 320, 322, 324, and The bodies 326 are stacked one on top of the other.

[0182] The insulators 320, 322, 324, and 326 may be, for example, oxide. Silicon, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, oxide Aluminum oxynitride, aluminum nitride oxide, aluminum nitride, etc. may be used.

[0183] In this specification, silicon oxynitride refers to a material having a higher content of oxygen than nitrogen in its composition. Silicon nitride oxide refers to a material that contains more nitrogen than oxygen. In this specification, aluminum oxynitride refers to a material with a high content. Aluminum oxide nitride is a material that has a higher oxygen content than nitrogen. It refers to a material that contains more nitrogen than oxygen as a constituent.

[0184] The insulator 322 serves to eliminate a step caused by the transistor 300 and other components disposed below it. For example, the top surface of the insulator 322 may have a function as a planarizing film. To improve flatness, the surface is flattened by a planarization process using chemical mechanical polishing (CMP) or other methods. It may be possible.

[0185] The insulator 324 is also provided with a substrate 311 or a transistor 300, etc. A film having a barrier property that prevents hydrogen and impurities from diffusing is used in the area where the capacitor 500 is provided. It is preferable that

[0186] An example of a film having a barrier property against hydrogen is silicon nitride formed by CVD. Here, a semiconductor having an oxide semiconductor such as the transistor 500 can be used. The diffusion of hydrogen into semiconductor elements can cause a deterioration in the characteristics of the semiconductor elements. Therefore, a film that suppresses hydrogen diffusion is provided between the transistor 500 and the transistor 300. Specifically, the film that suppresses the diffusion of hydrogen is a film that reduces the amount of hydrogen desorption. The membrane is thin.

[0187] The amount of desorption of hydrogen can be analyzed using, for example, thermal desorption spectroscopy (TDS). For example, the amount of hydrogen desorption from the insulator 324 can be determined by TDS analysis as follows: In the range of 50°C to 500°C, the amount of desorption converted to hydrogen atoms is Converted to a hit, it's 10 x 10 15 atoms / cm 2 Less than or equal to 5 x 10 15 a toms / cm 2 The following is fine.

[0188] It is preferable that the insulator 326 has a lower dielectric constant than the insulator 324. For example, The dielectric constant of the insulator 326 is preferably less than 4, more preferably less than 3. The relative dielectric constant of the insulator 326 is preferably 0.7 times or less than the relative dielectric constant of the insulator 324, and more preferably 0.6 times or less. By using a material with a low dielectric constant as the interlayer film, the parasitic capacitance generated between wirings can be reduced. can be reduced.

[0189] The insulators 320, 322, 324, and 326 are connected to the capacitor element 8. 00, or the conductor 328 and the conductor 330 connected to the transistor 500 are embedded. The conductors 328 and 330 function as plugs or wiring. In addition, the conductors that function as plugs or wiring are grouped together to form the same structure. In addition, in this specification and the like, a wiring and a plug connected to the wiring may be In other words, when a part of the conductor functions as a wiring, In some cases, a portion of the conductor functions as a plug.

[0190] The materials for each plug and wiring (conductor 328, conductor 330, etc.) include metal materials, alloys, and the like. Conductive materials such as gold, metal nitride, or metal oxide materials are used in a single layer or laminated layers. High-melting-point materials such as tungsten and molybdenum, which are both heat-resistant and conductive, can be used. It is preferable to use a material such as tungsten, or aluminum. It is preferable to form the wiring board from a low-resistance conductive material such as copper. This can reduce the wiring resistance.

[0191] A wiring layer may be provided on the insulator 326 and the conductor 330. For example, in FIG. An insulator 350, an insulator 352, and an insulator 354 are stacked in this order. In addition, a conductor 356 is formed on the insulators 350, 352, and 354. The conductor 356 functions as a plug or wiring that connects to the transistor 300. The conductor 356 is made of the same material as the conductors 328 and 330. It is possible.

[0192] For example, the insulator 350 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator having a barrier property against hydrogen. It is preferable that the insulating material 350 has a barrier property against hydrogen. A conductor having a barrier property against hydrogen is formed in the opening. The transistor 300 and the transistor 500 can be separated by a barrier layer. The diffusion of hydrogen from the transistor 300 to the transistor 500 can be suppressed.

[0193] As a conductor having a barrier property against hydrogen, for example, tantalum nitride or the like is used. In addition, by laminating tantalum nitride and highly conductive tungsten, The diffusion of hydrogen from the transistor 300 can be suppressed while maintaining the overall conductivity. In this case, the tantalum nitride layer having a barrier property against hydrogen is It is preferable that the insulating body 350 has a structure in which the insulating body 350 is in contact with the insulating body 350.

[0194] A wiring layer may be provided on the insulator 354 and the conductor 356. For example, in FIG. An insulator 360, an insulator 362, and an insulator 364 are stacked in this order. In addition, a conductor 366 is formed on the insulators 360, 362, and 364. The conductor 366 functions as a plug or wiring. The conductive body 328 and the conductive body 330 may be formed using the same materials.

[0195] For example, the insulator 360 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator having a barrier property against hydrogen. It is preferable that the insulating material 360 has a barrier property against hydrogen. A conductor having a barrier property against hydrogen is formed in the opening. The transistor 300 and the transistor 500 can be separated by a barrier layer. The diffusion of hydrogen from the transistor 300 to the transistor 500 can be suppressed.

[0196] A wiring layer may be provided on the insulator 364 and the conductor 366. For example, in FIG. An insulator 370, an insulator 372, and an insulator 374 are stacked in this order. In addition, a conductor 376 is formed on the insulators 370, 372, and 374. The conductor 376 functions as a plug or wiring. The conductive body 328 and the conductive body 330 may be formed using the same materials.

[0197] For example, the insulator 370 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator having a barrier property against hydrogen. In particular, an insulator 370 having a barrier property against hydrogen is useful. A conductor having a barrier property against hydrogen is formed in the opening. The transistor 300 and the transistor 500 can be separated by a barrier layer. The diffusion of hydrogen from the transistor 300 to the transistor 500 can be suppressed.

[0198] A wiring layer may be provided on the insulator 374 and the conductor 376. For example, in FIG. An insulator 380, an insulator 382, ​​and an insulator 384 are stacked in this order. In addition, a conductor 386 is formed on the insulators 380, 382, ​​and 384. The conductor 386 functions as a plug or wiring. The conductive body 328 and the conductive body 330 may be formed using the same materials.

[0199] For example, the insulator 380 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator having a barrier property against hydrogen. It is preferable that the insulator 380 has a barrier property against hydrogen. A conductor having a barrier property against hydrogen is formed in the opening. The transistor 300 and the transistor 500 can be separated by a barrier layer. The diffusion of hydrogen from the transistor 300 to the transistor 500 can be suppressed.

[0200] In the above, the wiring layer including the conductor 356, the wiring layer including the conductor 366, the conductor 376 The wiring layer including the conductor 386 has been described above. The semiconductor device is not limited to this. Alternatively, the number of wiring layers may be three or less, or five or more wiring layers similar to the wiring layer including the conductor 356 may be provided. Good too.

[0201] On the insulator 384, an insulator 510, an insulator 512, an insulator 514, and an insulator 516 are formed. , are stacked in this order. It is preferable that any of the bodies 516 is made of a material that has a barrier property against oxygen and hydrogen. .

[0202] For example, the insulator 510 and the insulator 514 may include, for example, the substrate 311 or the transistor. Hydrogen and impurities diffuse from the region where the capacitor 300 is provided to the region where the transistor 500 is provided. It is preferable to use a film having a barrier property that prevents the diffusion of the insulator 324. The same materials as those mentioned above can be used.

[0203] As an example of a film with barrier properties against hydrogen, silicon nitride formed by CVD is used. Here, a semiconductor element including an oxide semiconductor, such as the transistor 500, However, the diffusion of hydrogen may deteriorate the characteristics of the semiconductor element. A film that suppresses hydrogen diffusion is used between the transistor 500 and the transistor 300. Specifically, the film that suppresses hydrogen diffusion is a film that releases a small amount of hydrogen. do.

[0204] In addition, as a film having a barrier property against hydrogen, for example, an insulator 510 and an insulator 5 14 uses metal oxides such as aluminum oxide, hafnium oxide, and tantalum oxide. It is preferable.

[0205] In particular, aluminum oxide is a material that can absorb oxygen and hydrogen, which can cause fluctuations in the electrical characteristics of transistors. Therefore, it has a high blocking effect that prevents impurities such as acid and moisture from passing through the membrane. Aluminum oxide is a material that can absorb impurities such as hydrogen and moisture during and after the transistor manufacturing process. This can prevent impurities from being mixed into the transistor 500. Therefore, the release of oxygen from the oxide constituting the transistor 5 can be suppressed. Suitable for use as a protective film against 00.

[0206] For example, the insulators 512 and 516 may be made of the same material as the insulator 320. In addition, by using materials with a relatively low dielectric constant for these insulators, , the parasitic capacitance occurring between the wirings can be reduced. A silicon oxide film, a silicon oxynitride film, or the like can be used as the film 516 .

[0207] In addition, the insulators 510, 512, 514, and 516 are provided with conductors 5 18, and conductors (for example, conductor 503) that constitute the transistor 500 are embedded. Note that the conductor 518 is connected to the capacitor 800 or the transistor 300. The conductor 518 functions as a plug or a wiring. It can be provided using the same material as 30.

[0208] In particular, the insulator 510 and the conductor 518 in the area in contact with the insulator 514 are free of oxygen, hydrogen, It is preferable that the conductive material has a barrier property against water. The transistor 300 and the transistor 500 have barrier properties against oxygen, hydrogen, and water. The layer can be separated, and hydrogen diffusion from transistor 300 to transistor 500 can be suppressed.

[0209] Above the insulator 516 is the transistor 500 .

[0210] As shown in FIGS. 14A and 14B, the transistor 500 includes an insulator 514 and an insulator 550. 16, and the conductor 503 disposed so as to be embedded in the insulator 516 and the conductor 503. an insulator 522 disposed on the insulator 524; Oxide 530a disposed on 524 and oxide 530a disposed on oxide 53 530b, oxide 530c disposed on oxide 530b, and oxide 530c disposed on oxide 530c. Conductor 542a and conductor 542b are spaced apart, and conductor 542a and conductor 54 2b, and an opening is formed between the conductors 542a and 542b. The edge 580, the insulator 550 disposed on the bottom and side surfaces of the opening, and the surface on which the insulator 550 is formed and a conductor 560 disposed on the

[0211] 14A and 14B, the oxide 530a, the oxide 530b, the conductor 5 42a, and an insulator 544 may be disposed between the conductor 542b and the insulator 580. 14A and 14B, the conductor 560 is preferably formed in the insulator 550. The conductor 560a is provided on the side of the conductor 560a, and the conductor 560b is provided so as to be embedded inside the conductor 560a. 14A and 14B, it is preferable to have a conductor 560b. , the insulator 574 is disposed on the insulator 580, the conductor 560, and the insulator 550. is preferred.

[0212] In the following, the oxide 530a, the oxide 530b, and the oxide 530c will be collectively referred to as oxides 530a, 530b, and 530c. It is sometimes called oxide 530.

[0213] In the transistor 500, an oxide is formed in the region where the channel is formed and in the vicinity thereof. 5 shows a structure in which three layers of oxide 530a, oxide 530b, and oxide 530c are stacked. However, the present invention is not limited to this. For example, a single layer of oxide 530b, an oxide a two-layer structure of oxide 530b and oxide 530a; a two-layer structure of oxide 530b and oxide 530c; Alternatively, a stacked structure of four or more layers may be provided. Although the conductive body 560 is shown as a two-layer laminated structure, the present invention is not limited to this. For example, the conductor 560 may have a single layer structure or a laminated structure of three or more layers. 12 and 14A is an example, and the structure of the transistor 500 is not limited to this example. It is only necessary to use an appropriate transistor depending on the circuit configuration and driving method.

[0214] Here, the conductor 560 functions as the gate electrode of the transistor, and the conductors 542a and The conductor 542b functions as a source electrode and a drain electrode, respectively. The conductor 560 is sandwiched between the opening of the insulator 580 and the conductors 542a and 542b. The conductor 560, the conductor 542a, and the conductor 542b are formed so as to be embedded in the region. The placement of 42b is selected to be self-aligned with the opening of the insulator 580. In the transistor 500, the gate electrode is self-aligned between the source electrode and the drain electrode. Therefore, the conductor 560 can be positioned with a margin for alignment. Since the transistor 500 can be formed without any additional wiring, the area occupied by the transistor 500 can be reduced. This allows for miniaturization and high integration of semiconductor devices.

[0215] Furthermore, the conductor 560 is self-aligned in the region between the conductors 542a and 542b. Therefore, the conductor 560 has a region overlapping with the conductor 542a or the conductor 542b. As a result, the gap formed between the conductor 560 and the conductors 542a and 542b is Therefore, the switching speed of the transistor 500 can be improved. This improves the sound quality and provides high frequency characteristics.

[0216] Conductor 560 may function as a first gate (also called a top gate) electrode. The conductor 503 also functions as a second gate (also called a bottom gate) electrode. In this case, the potential applied to the conductor 503 may be different from the potential applied to the conductor 560. The threshold voltage of the transistor 500 is controlled by changing them independently without linking them together. In particular, applying a negative potential to the conductor 503 can turn on the transistor 5 It is possible to increase the threshold voltage of 00 to be higher than 0V and reduce the off-current. Therefore, when a negative potential is applied to the conductor 503, the conductor 560 This can reduce the drain current when the potential applied to is 0V.

[0217] The conductor 503 is arranged to overlap the oxide 530 and the conductor 560. Therefore, when a potential is applied to the conductor 560 and the conductor 503, The electric field and the electric field generated by the conductor 503 are connected, and a channel is formed in the oxide 530. In this specification and the like, the first gate electrode and the second gate electrode can cover the region where the first gate electrode and the second gate electrode are formed. The structure of a transistor in which the electric field of the gate electrode electrically surrounds the channel formation region is called This is called a surrounded channel (S-channel) structure.

[0218] The conductor 503 has the same structure as the conductor 518, and the insulators 514 and 5 Conductor 503a is formed in contact with the inner wall of opening 16, and conductor 503b is formed further inside. In the transistor 500, the conductor 503a and the conductor 503b are stacked. However, the present invention is not limited to this. The body 503 may be configured as a single layer or a laminated structure of three or more layers.

[0219] Here, the conductor 503a is a diffusion layer for impurities such as hydrogen atoms, hydrogen molecules, water molecules, and copper atoms. It is preferable to use a conductive material that has the function of suppressing the impurities (i.e., the impurities are less likely to permeate). Alternatively, the diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.) is suppressed. It is preferable to use a conductive material that has the above-mentioned function (i.e., that is difficult for oxygen to permeate). In this specification, the function of suppressing the diffusion of impurities or oxygen means the function of suppressing the diffusion of the above impurities or the above The function is to suppress the diffusion of any one or all of the oxygen.

[0220] For example, the conductor 503a has a function of suppressing the diffusion of oxygen, so that the conductor 503 This can prevent b from being oxidized and the electrical conductivity from decreasing.

[0221] When the conductor 503 also functions as a wiring, the conductor 503b is made of tungsten, copper, or the like. It is preferable to use a conductive material having high conductivity, such as aluminum or aluminum-based material. Although the conductor 503b is illustrated as a single layer, it may have a laminated structure. It may also be a laminate of titanium nitride and the above conductive material.

[0222] The insulators 522, 524, and 550 function as gate insulating films. do.

[0223] Here, the insulator 524 and the insulator 550 in contact with the oxide 530 have a stoichiometric composition. It is preferable to use an insulator that contains more oxygen than the insulator 524. Preferably, an excess oxygen region is formed in the insulator 550. By providing an insulator containing oxygen in contact with the oxide 530, oxygen vacancies in the oxide 530 can be eliminated. This can reduce the resistance and improve the reliability of the transistor 500.

[0224] As an insulator having an excess oxygen region, specifically, an oxide in which a part of oxygen is released by heating is used. It is preferable to use oxide materials. Oxides that release oxygen when heated are called TDS (Th Thermal Desorption Spectroscopy (DSS) analysis revealed that the oxygen atoms The converted amount of oxygen desorption is 1.0 x 10 18 atoms / cm 3 or more, preferably 1.0 x10 19 atoms / cm 3 More preferably, 2.0 × 10 19 atoms / c m 3 or more, or 3.0 x 10 20 atoms / cm 3 The oxide film is as described above. The surface temperature of the film during the TDS analysis is 100°C or higher and 700°C or lower. The temperature range is preferably from 0°C to 400°C.

[0225] Also, if the insulator 524 has an excess oxygen region, the insulator 522 may be oxygen-rich (e.g., It has the function of suppressing the diffusion of oxygen atoms, oxygen molecules, etc. (the oxygen is less likely to permeate) It is preferable that:

[0226] The insulator 522 has a function of suppressing the diffusion of oxygen and impurities, and the oxide 530 The oxygen contained in the conductor 503 is preferably not diffused to the insulator 516 side. This can prevent the insulator 524 and the oxide 530 from reacting with oxygen.

[0227] The insulator 522 may be, for example, aluminum oxide, hafnium oxide, aluminum and hafnium oxide. oxides containing ammonium (hafnium aluminate), tantalum oxide, zirconium oxide, titanium Lead zirconate titanate (PZT), strontium titanate (SrTiO3), or (Ba Insulators containing so-called high-k materials such as (Sr, Sr)TiO3 (BST) are used as single layers or laminated layers. As transistors become smaller and more highly integrated, the gate insulating layer Thinning the film can cause problems such as leakage current. Functions as a gate insulating film By using a high-k material as the insulator, the transistor behavior can be improved while maintaining the physical thickness. This makes it possible to reduce the gate potential during operation.

[0228] In particular, it has the function of suppressing the diffusion of impurities and oxygen (the oxygen is difficult to penetrate) ) Use an insulator containing oxide of one or both of aluminum and hafnium, which are insulating materials. It is recommended to use an oxide of aluminum or hafnium as an insulator. Aluminum oxide, hafnium oxide, oxides containing aluminum and hafnium (hafnium It is preferable to use a material such as aluminum aluminate. When formed, the insulator 522 prevents oxygen from being released from the oxide 530 and prevents the transistor 500 from being damaged. The layer functions as a layer that suppresses the intrusion of impurities such as hydrogen from the surrounding area into the oxide 530.

[0229] Alternatively, for example, aluminum oxide, bismuth oxide, or germanium oxide may be added to these insulators. Niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, Alternatively, zirconium oxide may be added to these insulators. Alternatively, these insulators may be nitrided. Silicon oxide, silicon oxynitride, or silicon nitride may be laminated on the edge.

[0230] In the transistor 500 shown in FIGS. 14A and 14B, the second layer is a two-layer laminate structure. As the gate insulating film, an insulator 522 and an insulator 524 are shown, but the second gate The insulating film may have a single layer or a laminated structure of three or more layers. The laminated structure is not limited to a laminated structure made of two or more materials, but may be a laminated structure made of different materials.

[0231] The transistor 500 includes an oxide 530 including a channel formation region, and an oxide semiconductor It is preferable to use a functional metal oxide. For example, the oxide 530 is In-M- Zn oxide (element M is aluminum, gallium, yttrium, copper, vanadium, beryl Sodium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, la tantalum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium It is preferable to use a metal oxide such as one or more selected from the following. The In-M-Zn oxides that can be used as In-Zn oxides are CAAC-OS and CAC-OS, which will be described later. The oxide 530 may preferably be an In—Ga oxide or an In—Zn oxide. may also be used.

[0232] The metal oxide that functions as the channel forming region in the oxide 530 is a band gap metal oxide. It is preferable to use a material with a peak voltage of 2 eV or more, preferably 2.5 eV or more. By using a metal oxide with a wide band gap, the off-state current of a transistor can be reduced. It is possible.

[0233] The oxide 530 has an oxide 530a under the oxide 530b, so that the oxide 530a The diffusion of impurities from structures formed below the oxide 530b can be suppressed. In addition, by having the oxide 530c on the oxide 530b, the oxide 530c can be formed. Therefore, the diffusion of impurities from the structure formed above into the oxide 530b can be suppressed. do.

[0234] The oxide 530 has a laminated structure of a plurality of oxide layers with different atomic ratios of each metal atom. Specifically, in the metal oxide used for the oxide 530a, it is preferable to use The atomic ratio of element M in the metal oxide used for oxide 530b is It is preferable that the atomic ratio of the metal oxide used for the oxide 530a is larger than that of the element M. In the oxide 530b, the atomic ratio of element M to In is In the oxide 530b, the atomic ratio of the element M to In is preferably larger than that of the element M. In the metal oxide used for the oxide 530a, the atomic ratio of In to the element M is In the metal oxide, the atomic ratio of In to the element M is preferably larger than that of In. , oxide 530c can be oxide 530a or oxide 530b. Things can be used.

[0235] The energy of the conduction band minimum of the oxide 530a and the oxide 530c is It is preferable that the energy of the oxide is higher than the energy of the bottom of the conduction band of oxide b. The electron affinity of oxide 530a and oxide 530c is smaller than that of oxide 530b. It is preferable that:

[0236] Here, at the junctions of the oxide 530a, the oxide 530b, and the oxide 530c, The energy level of the lower conduction band edge changes gradually. The energy levels of the conduction band minimum at the junction of 530b and oxide 530c are continuous. In order to achieve this, the oxide 530 The interface between oxide 530a and oxide 530b, and the interface between oxide 530b and oxide 530c are It is preferable to lower the defect level density of the resulting mixed layer.

[0237] Specifically, oxide 530a and oxide 530b, and oxide 530b and oxide 530c are By having a common element other than oxygen (as the main component), a mixed layer with low defect level density is formed. For example, when the oxide 530b is an In-Ga-Zn oxide, the oxide 530a and oxide 530c are In-Ga-Zn oxide, Ga-Zn oxide, oxide Gallium or the like may be used.

[0238] At this time, the main path of the carriers is the oxide 530b. By configuring the oxide 530c as described above, the interface between the oxide 530a and the oxide 530b and the oxide The defect state density at the interface between the substrate 530b and the oxide 530c can be reduced. Therefore, the influence of interface scattering on carrier conduction is reduced, and the transistor 500 has a high On-current can be obtained.

[0239] On the oxide 530c, a conductor 542a is formed, which functions as a source electrode and a drain electrode. The conductors 542a and 542b are provided. Aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, ungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium , beryllium, indium, ruthenium, iridium, strontium, and lanthanum The metal elements mentioned above, or alloys containing the above metal elements, or combinations of the above metal elements It is preferable to use an alloy of tantalum nitride, titanium nitride, tungsten nitride, etc. titanium and aluminum nitrides, tantalum and aluminum nitrides, and titanium oxides Ruthenium, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel It is preferable to use oxides containing titanium. Nitrides containing tantalum and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide , ruthenium nitride, oxides containing strontium and ruthenium, oxides containing lanthanum and nickel Oxides are conductive materials that are resistant to oxidation or that maintain conductivity even after absorbing oxygen. Furthermore, metal nitride films such as tantalum nitride have low resistance to hydrogen or oxygen. It is preferable because it has barrier properties.

[0240] 14A and 14B, the conductor 542a and the conductor 542b have a single-layer structure. However, a laminated structure of two or more layers may be used. For example, a tantalum nitride film and a tungsten film may be used. Alternatively, a titanium film and an aluminum film may be stacked. Two-layer structure with aluminum film laminated on stainless steel film, copper-magnesium-aluminum alloy Two-layer structure with copper film laminated on top of titanium film, two-layer structure with copper film laminated on top of titanium film, tungsten film A two-layer structure may be formed by laminating a copper film on top.

[0241] Also, a titanium film or titanium nitride film and an aluminum film overlaid on the titanium film or titanium nitride film are used. A three-layer structure in which a titanium film or a copper film is laminated and a titanium film or a titanium nitride film is further formed on top of that. Molybdenum film or molybdenum nitride film and a An aluminum film or a copper film is laminated on top of it, and a molybdenum film or a molybdenum nitride film is further laminated on top of it. There are three-layer structures that form a transparent film. Transparent conductive materials may also be used.

[0242] As shown in FIG. 14A, the conductor 542a (conductor 542b) of the oxide 530 At the interface and its vicinity, a region 543a and a region 543b are formed as low resistance regions. In this case, the region 543a functions as either a source region or a drain region. The region 543b functions as the other of the source region and the drain region. A channel forming region is formed in the region sandwiched between 3a and region 543b.

[0243] By providing the conductor 542a (conductor 542b) so as to be in contact with the oxide 530, The oxygen concentration in the region 543a (region 543b) may decrease. The metal contained in the conductor 542a (conductor 542b) and the oxide 530 are In such a case, a metal compound layer containing the component may be formed in the region 543a (region The carrier concentration in the region 543a (region 543b) increases, and the region 543a (region 543b) becomes a low resistance region. become.

[0244] The insulator 544 is provided to cover the conductor 542a and the conductor 542b. The insulator 544 prevents oxidation of the oxide 542a and the conductor 542b. 30 and may be provided so as to be in contact with the insulator 524.

[0245] Insulator 544 includes hafnium, aluminum, gallium, yttrium, and zirconium. Smoke, tungsten, titanium, tantalum, nickel, germanium, neodymium, lanthanum Alternatively, a metal oxide containing one or more metals selected from magnesium, etc. may be used. Alternatively, silicon nitride oxide or silicon nitride may be used as the insulator 544. You can be there.

[0246] In particular, the insulator 544 may be an oxide of aluminum or hafnium, or both. Insulators including aluminum oxide, hafnium oxide, aluminum, and hafnium It is preferable to use an oxide containing hafnium (hafnium aluminate). Hafnium aluminate has higher heat resistance than hafnium oxide film. This is preferable because it is difficult to crystallize during the treatment. If b is a material that is resistant to oxidation or does not significantly decrease in conductivity even when it absorbs oxygen, it is an insulating material. The insulator 544 is not an essential component and may be appropriately designed depending on the desired transistor characteristics. stomach.

[0247] By including the insulator 544, impurities such as water and hydrogen contained in the insulator 580 are converted into acids. The oxide 530c is prevented from diffusing into the oxide 530b through the insulator 550. In addition, the excess oxygen contained in the insulator 580 can prevent the conductor 560 from being oxidized. It is possible.

[0248] The insulator 550 functions as a first gate insulating film. Similar to the body 524, an insulator containing excess oxygen and releasing oxygen when heated is used. It is preferable to form

[0249] Specifically, silicon oxide having excess oxygen, silicon oxynitride, silicon nitride oxide, Silicon nitride, fluorine-doped silicon oxide, carbon-doped silicon oxide, carbon, and Silicon oxide doped with nitrogen and silicon oxide having vacancies can be used. Silicon oxide and silicon oxynitride are preferred because they are stable to heat.

[0250] In addition, in order to efficiently supply excess oxygen contained in the insulator 550 to the oxide 530, A metal oxide may be provided between the insulating material 550 and the conductor 560. It is preferable to suppress the diffusion of oxygen from the body 550 to the conductor 560. By providing a metal oxide, the diffusion of excess oxygen from the insulator 550 to the conductor 560 is suppressed. In other words, it is possible to suppress the decrease in the amount of excess oxygen supplied to the oxide 530. In addition, oxidation of the conductor 560 due to excess oxygen can be suppressed. Any material that can be used for the insulator 544 may be used.

[0251] Note that the insulator 550 may have a stacked structure similar to the second gate insulating film. As transistors become smaller and more highly integrated, the gate insulating film becomes thinner, which reduces leakage current and other problems. Therefore, the insulator that functions as the gate insulating film is made of high-k material. By using a laminated structure of a thermally stable material and a thin film of a thin film, It is possible to reduce the gate potential during transistor operation. It may have a laminated structure.

[0252] The conductor 560 functioning as the first gate electrode has a two-layer structure in FIGS. 14A and 14B. However, it may have a single layer structure or a laminated structure of three or more layers.

[0253] The conductor 560a is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, or a nitrogen oxide molecule. (N2O, NO, NO2, etc.), conductive material with the function of suppressing the diffusion of impurities such as copper atoms It is preferable to use a material containing oxygen (for example, oxygen atoms, oxygen molecules, etc.). It is preferable to use a conductive material that has the function of suppressing the diffusion of the conductor 56. Oa has the function of suppressing oxygen diffusion, so the oxygen contained in the insulator 550 This can prevent the conductor 560b from being oxidized and the conductivity from decreasing. Examples of conductive materials that have the function of suppressing this include tantalum, tantalum nitride, and ruthenium. It is preferable to use ruthenium, ruthenium oxide, or the like as the conductor 560a. An oxide semiconductor that can be used for the oxide 530 can be used. In that case, the conductor 560 By forming the conductive layer 560b by sputtering, the electrical resistance of the conductive layer 560a is reduced, and the conductive layer 560b is This is called an OC (Oxide Conductor) electrode. can be done.

[0254] The conductor 560b is a conductive material mainly composed of tungsten, copper, or aluminum. In addition, since the conductor 560b also functions as a wiring, It is preferable to use a highly conductive material, such as tungsten, copper, or aluminum. A conductive material containing rubber as a main component can be used. For example, a laminated structure of titanium or titanium nitride and the above conductive material may be used. .

[0255] The insulator 580 is provided on the conductor 542a and the conductor 542b via the insulator 544. Preferably, the insulator 580 has an excess oxygen region. For example, the insulator 58 0, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, fluorine silicon oxide doped with carbon, silicon oxide doped with carbon and nitrogen It is preferable that the material contains silicon, silicon oxide having pores, or resin. Silicon nitride and silicon oxynitride are preferred because they are thermally stable. However, silicon oxide with vacancies can easily form excess oxygen regions in later processes. This is preferable because it can

[0256] The insulator 580 preferably has an excess oxygen region. Oxygen is released upon heating. By providing the insulator 580 in contact with the insulator 550, oxygen in the insulator 580 is 550, the oxide 530 can be efficiently supplied. It is preferable that the concentration of impurities such as water or hydrogen in the fuel is reduced.

[0257] The opening in the insulator 580 is formed to overlap the region between the conductor 542a and the conductor 542b. As a result, the conductor 560 is inserted through the opening in the insulator 580 and the conductor 542a and the conductor 542b. It is formed so as to be embedded in the region sandwiched between 542b.

[0258] In miniaturizing semiconductor devices, it is required to shorten the gate length. It is necessary to prevent the conductivity of the conductor 60 from decreasing. In this embodiment, the conductor 560 may have a shape with a high aspect ratio. The conductor 560 is provided so as to be embedded in the opening of the insulator 580. Even a shape with a high ratio can be formed without causing the conductor 560 to collapse during the process. Cut.

[0259] The insulator 574 is connected to the upper surface of the insulator 580, the upper surface of the conductor 560, and the upper surface of the insulator 550. The insulator 574 is preferably provided in contact with the , insulator 550, and insulator 580 can be provided with excess oxygen regions. Oxygen can be supplied into the oxide 530 from the excess oxygen region.

[0260] For example, the insulator 574 may be hafnium, aluminum, gallium, yttrium, Zirconium, tungsten, titanium, tantalum, nickel, germanium, or magnesium Metal oxides containing one or more metals selected from the group consisting of ammonium, cadmium, and ammonium can be used. .

[0261] In particular, aluminum oxide has a high barrier property and is a thin film of 0.5 nm to 3.0 nm. Therefore, the diffusion of hydrogen and nitrogen can be suppressed even if the sputtering method is used. The aluminum oxide film formed by this method is both an oxygen source and a barrier to impurities such as hydrogen. It can also function as a membrane.

[0262] In addition, it is preferable to provide an insulator 581 that functions as an interlayer film over the insulator 574. The insulator 581, like the insulator 524, has a low impurity concentration such as water or hydrogen. It is preferably reduced.

[0263] In addition, the openings formed in the insulators 581, 574, 580, and 544 Conductor 540a and conductor 540b are placed in the opening. The conductors 540a and 540b are provided facing each other with the conductor 560 in between. It has the same configuration as the conductor 546 and the conductor 548 described later. As shown in the figure, impurities such as hydrogen are present between the sidewall of the opening and the conductor 540a or conductor 540b. Alternatively, an insulator having a function as a barrier film may be provided.

[0264] An insulator 582 is provided on the insulator 581. The insulator 582 is resistant to oxygen and hydrogen. Therefore, the insulator 582 is preferably made of an insulating material. The insulator 582 may be made of the same material as the insulator 514. For example, aluminum oxide may be used. It is preferable to use metal oxides such as tungsten oxide, hafnium oxide, and tantalum oxide.

[0265] In particular, aluminum oxide is a material that can absorb oxygen and hydrogen, which can cause fluctuations in the electrical characteristics of transistors. Therefore, it has a high blocking effect that prevents impurities such as acid and moisture from passing through the membrane. Aluminum oxide is a material that can absorb impurities such as hydrogen and moisture during and after the transistor manufacturing process. This can prevent impurities from being mixed into the transistor 500. Therefore, the release of oxygen from the oxide constituting the transistor 5 can be suppressed. Suitable for use as a protective film against 00.

[0266] An insulator 586 is provided on the insulator 582. The insulator 586 is The same materials as those of 320 can be used. In addition, these insulators have a relatively low dielectric constant. By using a material with high insulating properties, the parasitic capacitance between wiring can be reduced. The edge 586 can be a silicon oxide film, a silicon oxynitride film, or the like.

[0267] Also, the insulator 522, the insulator 524, the insulator 544, the insulator 580, the insulator 574, the insulator The edge 581, the insulator 582, and the insulator 586 are connected to the conductor 546, the conductor 548, etc. is embedded.

[0268] The conductor 546 and the conductor 548 are connected to the capacitor 800, the transistor 500, or the transistor The conductor 546 functions as a plug or wiring that connects to the transistor 300. The conductor 548 can be formed using the same material as the conductor 328 and the conductor 330. Cut.

[0269] Next, a capacitor 800 is provided above the transistor 500. 800 includes a conductor 810, a conductor 820, and an insulator 830.

[0270] Moreover, a conductor 812 may be provided over the conductor 546 and the conductor 548. The conductor 12 functions as a plug or wiring that connects to the transistor 500. The conductor 810 functions as an electrode of the capacitor 800. The body 810 can be formed simultaneously.

[0271] The conductor 812 and the conductor 810 may be made of molybdenum, titanium, tantalum, or tungsten. a metal film containing an element selected from aluminum, copper, chromium, neodymium, and scandium; Or a metal nitride film containing the above elements (tantalum nitride film, titanium nitride film, molybdenum nitride film) Indium tin oxide, tungsten nitride film, etc. can be used. Indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide Indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium Conductive materials such as indium zinc oxide and indium tin oxide doped with silicon oxide are used. It is also possible.

[0272] In FIG. 12, the conductor 812 and the conductor 810 are shown as single-layer structures, but the present invention is not limited to this structure. For example, a conductive material having a barrier property and a conductive material having a high conductivity may be used. Conductors with barrier properties and high adhesion to highly conductive conductors A thin conductor may be formed.

[0273] The conductor 820 is provided so as to overlap with the conductor 810 with the insulator 830 interposed therebetween. The conductor 820 is made of a conductive material such as a metal material, an alloy material, or a metal oxide material. High-melting-point materials such as tungsten and molybdenum, which have both heat resistance and electrical conductivity, are used. It is preferable to use tungsten, and it is particularly preferable to use tungsten. When forming the structure at the same time as other structures, low-resistance metal materials such as Cu (copper) and Al (aluminum) are used. It is best to use a

[0274] An insulator 840 is provided on the conductor 820 and the insulator 830. The insulator 840 can be formed using a material similar to that of the insulator 320. It may also function as a planarizing film that covers the underlying unevenness.

[0275] By using this structure, a semiconductor device using a transistor having an oxide semiconductor This can suppress the fluctuation of electrical characteristics and improve reliability. In memory devices, arithmetic devices, etc. using transistors having semiconductors, miniaturization or high integration It is possible to achieve accumulation.

[0276] [Metal oxides] The following is applicable to the semiconductor layer (oxide 530) in which the channel of the transistor is formed. This section describes metal oxides.

[0277] In this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal oxides). Metal oxides containing nitrogen are sometimes collectively called metal oxynitrides (metal oxynitrides). For example, zinc oxynitride (ZnON) Nitrogen-containing metal oxides such as the above may be used for the semiconductor layer.

[0278] In this specification, CAAC (c-axis aligned crystal) l), and when written as CAC (Cloud-Aligned Composite) CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration. .

[0279] For example, the semiconductor layer uses CAC (Cloud-Aligned Composite) OS (Oxide Semiconductor) can be used.

[0280] CAC-OS or CAC-metal oxide is a material that has a conductive function in some parts. The material has insulating properties in some parts and semiconductor properties in the whole material. Note that CAC-OS or CAC-metal oxide is used as the semiconductor of a transistor. When used in a dielectric layer, the conductive function is to allow electrons (or holes) to flow as carriers. The insulating function is to prevent the flow of electrons, which act as carriers. By making the functions of the two complementary, the switching function (On / Off) This function (which turns off the power supply) is given to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, By separating the functions, the functionality of both can be maximized.

[0281] In addition, CAC-OS or CAC-metal oxide is a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive region and the insulating region in the material are formed by nanoparticle layers. The conductive and insulating regions may be separated by a bell. In addition, the conductive area may be observed as a cloud-like connected area with a blurred periphery. This may be the case.

[0282] In addition, in the CAC-OS or CAC-metal oxide, a conductive region and The insulating regions are each 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. They may be dispersed in the material at sizes of less than 1 m.

[0283] In addition, CAC-OS or CAC-metal oxide has different band gaps For example, CAC-OS or CAC-metal ox The ide consists of a wide-gap component due to the insulating region and a conductive component due to the conductive region. In this configuration, when carriers flow, In addition, carriers mainly flow in the narrow gap component. The component with a narrow gap acts complementary to the component with a wide gap. Carriers also flow into the wide-gap component in conjunction with the component that has a wide gap. CAC-OS or CAC-metal oxide is used as the channel formation region of the transistor. When used in a transistor, it has a high current driving force in the on-state, i.e., a large on-current. , and high field-effect mobility can be obtained.

[0284] That is, CAC-OS or CAC-metal oxide is a matrix composite. matrix composite, or metal matrix composite It can also be called a matrix composite.

[0285] Oxide semiconductors (metal oxides) are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As a non-single-crystal oxide semiconductor, for example, CAAC-OS (c- axis aligned crystalline oxide semiconductor ctor), polycrystalline oxide semiconductor, nc-OS (nanocrystalline ox ide semiconductor), pseudo-amorphous oxide semiconductor (a-like OS : amorphous-like oxide semiconductor), and non crystalline oxide semiconductors.

[0286] CAAC-OS has a c-axis orientation and multiple nanocrystals are connected in the ab-plane direction. The crystal structure is distorted by the connection of multiple nanocrystals. In the region, the lattice arrangement is changed between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement. This refers to the point where the direction of the

[0287] Nanocrystals are basically hexagonal, but are not limited to regular hexagonal shapes. They may also have non-regular hexagonal shapes. In addition, the distortion may have lattice arrangements such as pentagons and heptagons. In CAAC-OS, clear grain boundaries are observed even near the strain. It is difficult to confirm the lattice distortion. This is because the CAAC-OS has a crystalline structure in the ab-plane direction. The oxygen atoms are not densely packed, and the bond distance between atoms is shortened by the substitution of metal elements. This is because distortion can be tolerated by changing the frequency.

[0288] In addition, the CAAC-OS has a layer containing indium and oxygen (hereinafter referred to as an In layer) and an element A layered crystal structure consisting of layers containing M, zinc, and oxygen (hereinafter referred to as the (M,Zn) layer). (also called layer structure). Indium and element M are mutually substitutable. When the element M in the (M,Zn) layer is replaced with indium, the (In,M,Zn) layer Also, when indium in the In layer is substituted with element M, (In,M) It can also be expressed as a layer.

[0289] CAAC-OS is a highly crystalline metal oxide. Since it is difficult to identify grain boundaries, the decrease in electron mobility caused by grain boundaries is unlikely to occur. In addition, the crystallinity of metal oxides can be reduced by the incorporation of impurities or the generation of defects. Therefore, CAAC-OS should be free from impurities and defects (oxygen vacancies (V O :oxygen v It can also be called a metal oxide with low acancy. Metal oxides with CAAC-OS have stable physical properties. The metal oxides used are heat resistant and highly reliable.

[0290] nc-OS is a material that can be used in microscopic areas (e.g., areas between 1 nm and 10 nm, especially areas between 1 nm and 10 nm). The atomic arrangement is periodic in the region of 3 nm or less. There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analytical method, nc-OS may be classified as a-like OS or amorphous oxide semiconductor. It may be indistinguishable from the body.

[0291] Indium gallium oxide, a type of metal oxide containing indium, gallium, and zinc, is used. The IGZO nanocrystals mentioned above are stable. In particular, IGZO tends to have difficulty growing crystals in the atmosphere. , small crystals (e.g., crystals of several mm or several cm) are more likely to be formed than large crystals (here, crystals of several mm or several cm). For example, the nanocrystals mentioned above may be structurally more stable.

[0292] The a-like OS is a metal oxide semiconductor with a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has pores or low density regions. The ke-OS has lower crystallinity than the nc-OS and CAAC-OS.

[0293] Oxide semiconductors (metal oxides) have a variety of structures, each with different properties. The oxide semiconductor of one embodiment of the present invention may be an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-li The ke-OS, nc-OS, and CAAC-OS may have two or more of them.

[0294] The metal oxide film that functions as a semiconductor layer is heated with either an inert gas or oxygen gas, or The metal oxide film can be formed by using both of the oxygen flow rate and the oxygen flow rate. There is no particular limitation on the ratio (oxygen partial pressure). However, in order to obtain a transistor with high field effect mobility, In this case, the oxygen flow rate (oxygen partial pressure) during the formation of the metal oxide film is 0% or more. Preferably, it is 30% or less, more preferably 5% to 30% or less, and even more preferably 7% to 15% or less. Preferred.

[0295] The metal oxide preferably has an energy gap of 2 eV or more, and more preferably 2.5 eV or more. It is more preferable that the electron energy is 3 eV or more, and even more preferable that the electron energy is 3 eV or more. The off-state current of a transistor is reduced by using a metal oxide with a wide energy gap. It is possible.

[0296] The substrate temperature during the deposition of the metal oxide film is preferably 350°C or less, and is preferably between room temperature and 200°C. The temperature is more preferably from room temperature to 130° C., and even more preferably from room temperature to 130° C. The temperature is preferably room temperature, as this can increase productivity.

[0297] The metal oxide film can be formed by sputtering. The LD method, PECVD method, thermal CVD method, ALD method, vacuum deposition method, etc. may also be used.

[0298] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Explanation of symbols]

[0299] R1, R2, G1, G2, B1, B2: display elements, S0, S1, S2: image signals, 10, 10a: composite device, 11: display device, 12, 12a: sensor device, 13: information processing device device, 21: control unit, 22: display unit, 23: imaging unit, 24: lens, 25: communication unit, 25a : recovery operation, 25b: processing operation, 25c: pause operation, 26: image generation unit, 27: signal, 3 1: sensor unit, 32: communication unit, 33: signal, 33a: pulse signal, 33b: signal, 34: Display unit, 40: user, 41: eyeball, 42: arm, 43: finger, 44: upper arm, 45: clothing, 50a, 50b, 50c: Images, 51a, 51b, 51c: Image information

Claims

1. A sensor device and a display device, the sensor device has a first communication unit and a sensor unit, and is wearable on a human body; the display device includes a display unit, a second communication unit, and a control unit; the first communication unit has a function of transmitting a signal including information acquired by the sensor unit, the second communication unit has a function of receiving the signal, the control unit has a function of returning from a sleep state in response to the signal, the control unit has a function of generating first image data based on the information and outputting the first image data to the display unit; the control unit has a circuit having a function of saving data before the sleep state; the circuit includes a first memory circuit, a second memory circuit, a third memory circuit, and a read circuit; the second memory circuit includes a first transistor and a first capacitor; the third memory circuit includes a second transistor, a third transistor, and a second capacitor; the readout circuit includes a fourth transistor, a fifth transistor, a sixth transistor, and a seventh transistor; the first memory circuit is electrically connected to one of a source and a drain of the first transistor via a first wiring; the other of the source and the drain of the first transistor is electrically connected to the first capacitance element; the other of the source and the drain of the first transistor is electrically connected to the gate of the second transistor; the other of the source and the drain of the first transistor is electrically connected to the gate of the sixth transistor; one of a source or a drain of the second transistor is electrically connected to one of a source or a drain of the third transistor; the other of the source and the drain of the third transistor is electrically connected to the second capacitance element; the other of the source and the drain of the third transistor is electrically connected to the gate of the seventh transistor; one of a source and a drain of the fourth transistor is electrically connected to the first memory circuit via a second wiring; one of a source or a drain of the fourth transistor is electrically connected to one of a source or a drain of the fifth transistor; a gate of the fourth transistor electrically connected to a gate of the fifth transistor; the other of the source and the drain of the fifth transistor is electrically connected to the one of the source and the drain of the sixth transistor; the other of the source and the drain of the sixth transistor is electrically connected to the one of the source and the drain of the seventh transistor; the first transistor, the second transistor, the third transistor, the fifth transistor, and the seventh transistor are n-channel transistors, the fourth transistor and the sixth transistor are p-channel transistors, The display unit has a function of displaying an image based on the first image data.

2. In claim 1, The sensor unit is a composite device having a function of detecting a blood glucose level.

3. In claim 1 or claim 2, The display device is a composite device that can be worn on a human head.

Images