Imaging element

The image sensor combines global and rolling electronic shutters to address image distortion and autofocus issues, achieving high-speed readout and improved image quality by selectively applying each shutter method to different areas of the pixel array.

JP2025188294APending Publication Date: 2025-12-25NIKON CORP
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Patent Information

Application Number
JP2025176917
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-10-21
Publication Date
2025-12-25

AI Technical Summary

Technical Problem

Conventional image sensors cannot read out signals using both the rolling electronic shutter method and the global electronic shutter method during the readout period of one frame, leading to issues such as image distortion for moving objects, poor autofocus accuracy, increased power consumption, and image quality degradation due to dark current variations.

Method used

The image sensor employs a hybrid approach where a part of the pixel area is driven by a global electronic shutter and the other areas by a rolling electronic shutter during the readout of one frame, allowing simultaneous pixel accumulation in specific areas for improved accuracy and reducing readout time for target areas.

Benefits of technology

This hybrid method enhances autofocus accuracy on moving objects, reduces power consumption, and minimizes image distortion and dark current effects, enabling high-speed readout of target areas while maintaining overall image quality.

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Abstract

To obtain an imaging signal by a rolling electronic shutter system and an imaging signal by a global electronic shutter system within one frame.SOLUTION: An imaging element includes a plurality of pixels arranged in row and column directions in a pixel area and generating signals based on photoelectrically converted charges, and a drive circuit unit that controls the plurality of pixels so as to read out the signals from a plurality of first pixels arranged in the row and column directions in a first area of the pixel area by a global electronic shutter system, and to read out the signals from a plurality of second pixels arranged in the row and column directions in a second area of the pixel area by a rolling electronic shutter system.SELECTED DRAWING: Figure 11
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Description

[Technical Field]

[0001] The present invention relates to an imaging device. [Background technology]

[0002] BACKGROUND ART Conventionally, an imaging element capable of switching between a rolling electronic shutter system and a global electronic shutter system has been known (see Patent Document 1). Conventional image sensors cannot read out signals using both the rolling electronic shutter method and the global electronic shutter method during the readout period of one frame. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-165104 Summary of the Invention

[0004] An imaging element according to one aspect of the invention comprises a plurality of pixels arranged in a row direction and a column direction in a pixel area, the pixels generating signals based on photoelectrically converted charges, and a drive circuit unit that controls the pixels to read out the signals from a plurality of first pixels arranged in a row direction and a column direction in a first area of ​​the pixel area by a global electronic shutter method, and to read out the signals from a plurality of second pixels arranged in a row direction and a column direction in a second area of ​​the pixel area by a rolling electronic shutter method. [Brief explanation of the drawings]

[0005] [Figure 1] 1 is a diagram illustrating an example of the configuration of a digital camera according to an embodiment of the present invention. [Figure 2] FIG. 1 is a diagram illustrating a schematic overall configuration of an imaging element. [Figure 3] FIG. 1 is a diagram illustrating an example of the configuration of a conventional imaging system. [Figure 4] FIG. 1 is a diagram showing the configuration of a unit pixel and part of a vertical drive circuit in a rolling electronic shutter type CMOS image sensor. [Figure 5] FIG. 10 is a diagram showing the driving timing of a rolling electronic shutter. [Figure 6] FIG. 10 is a diagram showing an overall image of the driving timing of a rolling electronic shutter. [Figure 7] FIG. 1 is a diagram showing the configuration of a unit pixel and part of a vertical drive circuit in a global electronic shutter type CMOS image sensor. [Figure 8] FIG. 10 is a diagram showing the driving timing of the global electronic shutter. [Figure 9] FIG. 10 is a diagram showing an overall image of the drive timing of the global electronic shutter. [Figure 10] FIG. 1 is a diagram illustrating an example of the configuration of an imaging system according to a first embodiment. [Figure 11] FIG. 2 is a diagram showing the configuration of a unit pixel and part of a vertical drive circuit of an image sensor according to the first embodiment. [Figure 12] FIG. 4 is a diagram showing the driving timing of the rolling electronic shutter and the global electronic shutter in the first embodiment. [Figure 13] FIG. 3 is a diagram showing an overall image of the driving timing of the rolling electronic shutter and the global electronic shutter in the first embodiment. [Figure 14] FIG. 10 is a diagram showing an example of setting rows for driving the global electronic shutter. [Figure 15] FIG. 10 is a diagram showing the configuration of a unit pixel and part of a vertical drive circuit of an image sensor according to a second embodiment. [Figure 16] FIG. 10 is a diagram showing the driving timing of the rolling electronic shutter and the global electronic shutter in the second embodiment. [Figure 17] FIG. 10 is a diagram showing an overall image of the driving timing of the rolling electronic shutter and the global electronic shutter in the second embodiment. [Figure 18] FIG. 10 is a diagram showing the configuration of a unit pixel and part of a vertical drive circuit of an image sensor according to a third embodiment. [Figure 19] FIG. 10 is a diagram showing a first setting example of a block area in which the global electronic shutter is driven. [Figure 20] FIG. 11 is a diagram showing the driving timing of the rolling electronic shutter and the global electronic shutter in the third embodiment. [Figure 21] FIG. 10 is a diagram showing a second setting example of a block area in which the global electronic shutter is driven. [Figure 22] FIG. 10 is a diagram showing a third setting example of a block area in which the global electronic shutter is driven. [Figure 23] FIG. 10 is a diagram showing a fourth example of setting a block area in which the global electronic shutter is driven. [Figure 24] FIG. 13 is a diagram illustrating the relationship between the arrangement of block areas and the settings of vertical and horizontal areas in a fourth embodiment. [Figure 25] FIG. 10 is a diagram showing an example of setting an area in which the global electronic shutter is driven. [Figure 26] FIG. 10 is a diagram illustrating an example of the configuration of an imaging system according to a second embodiment. [Figure 27] FIG. 10 is a diagram illustrating an example of the configuration of a unit pixel according to a second embodiment. [Figure 28] FIG. 10 is a diagram showing the driving timing of the rolling electronic shutter and the global electronic shutter in the second embodiment. [Figure 29] FIG. 10 is a diagram illustrating moving object detection. [Figure 30] 1A and 1B are diagrams showing examples of images obtained with a rolling electronic shutter and a global electronic shutter. DETAILED DESCRIPTION OF THE INVENTION

[0006] -First embodiment- A first embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a block diagram showing the configuration of a digital camera in this embodiment. The digital camera in Fig. 1 is an interchangeable lens type digital camera, and is composed of an interchangeable lens 110 and a camera body 100, with the interchangeable lens 110 attached to the camera body 100 via a lens attachment portion 105.

[0007] The interchangeable lens 110 includes a lens control device 111, a zoom lens 112, a focus lens 113, an anti-vibration lens 114, an aperture 115, and a lens operation unit 116. The lens control device 111 includes peripheral components such as a CPU and memory, and performs drive control of the focus lens 113 and aperture 115, position detection of the zoom lens 112 and focus lens 113, transmission of lens information to the camera body 100, and reception of camera information from the camera body 100.

[0008] The camera body 100 includes an image sensor 101, a body control device 102, a body operation unit 103, and a display unit 104. The image sensor 101 is disposed at the intended imaging plane (intended focal plane) of the interchangeable lens 110, and photoelectrically converts the subject image formed by the interchangeable lens 110. The body operation unit 103 includes a shutter button, a member for setting the focus detection area, and the like. The display unit 104 is an LCD monitor (rear monitor) mounted on the rear of the camera body 100.

[0009] The body control device 102 includes a CPU and peripheral components such as memory. The body control device 102 performs drive control of the image sensor 101, readout of image signals, focus detection calculations, focus adjustment of the interchangeable lens 110, processing and recording of image signals, and operational control of the digital camera. The body control device 102 communicates with the lens control device 111 via electrical contacts 106 provided in the lens attachment unit 105, receiving lens information and transmitting camera information (defocus amount, aperture value, etc.).

[0010] A subject image is formed on the light receiving surface of the image sensor 101 by a light beam that has passed through the interchangeable lens 110. This subject image is photoelectrically converted by the image sensor 101, and an image signal is sent to the body control device 102.

[0011] The body control device 102 detects the focus adjustment state (defocus amount) of the interchangeable lens 110 by performing focus detection calculations based on the image signal from the image sensor 101, and sends this defocus amount to the lens control device 111. The lens control device 111 calculates the drive amount of the focus lens 113 based on the received defocus amount, and drives the focus lens 113 with a motor or the like (not shown) based on this drive amount to move it to a focus position.

[0012] The body control device 102 also processes the image signal from the image sensor 101 to generate image data and stores it in a memory card (not shown). At the same time, the body control device 102 causes the display unit 104 to display a through image based on the through image signal from the image sensor 101.

[0013] (Overall configuration of the image sensor) FIG. 2 is a simplified diagram illustrating the overall configuration of the image sensor 101. Note that FIG. 2 omits the power supply and detailed circuits. The image sensor 101 is configured as a CMOS image sensor. The image sensor 101 includes a pixel area 201, a vertical drive circuit 202, a column circuit 203, a horizontal transfer circuit 204, an output circuit 205, and a control unit 206. The pixel area 201 includes multiple pixels arranged two-dimensionally in the horizontal (row) and vertical (column) directions. Each pixel includes a photodiode (photoelectric conversion unit) that accumulates charge according to the amount of incident light. Each pixel in the pixel area 201 is controlled by the vertical drive circuit 202, and image signals corresponding to the accumulated charge accumulated in the photodiode through photoelectric conversion are sequentially output to the column circuit 203. The column circuit 203 processes the image signals from each pixel by performing correlated double sampling (CDS) and applying gain to them so that they can be easily handled as image signals in subsequent circuits (not shown). The image signal processed by the column circuit 203 is sent to the output circuit 205 via the horizontal transfer circuit 204 and is then passed to the subsequent circuit as the output of the image sensor 101. Although an example of an analog output sensor has been described here, the basic concept remains the same even if a digital output sensor is used. The control unit 206 controls each of the above components. The operations of the pixel area 201, vertical drive circuit 202, column circuit 203, horizontal transfer circuit 204, and output circuit 205, which will be described below, are all controlled by the control unit 206.

[0014] (Conventional imaging system) Before describing the imaging system according to this embodiment, an example of the configuration of a conventional imaging system will be described. Fig. 3 is a diagram showing an example of the configuration of a conventional imaging system. In a conventional imaging system 500, a subject detection unit 502 detects a subject based on an image signal obtained by an imaging element 501. A processing execution unit 503 then performs subject recognition processing based on the detection result by the subject detection unit 502, and based on the recognition result, performs moving subject prediction processing to predict the movement of a moving subject, subject tracking processing to track a subject, AF (AutoFocus) area selection processing, and the like. Depending on the application of such imaging system 500, an imaging element driven by a rolling electronic shutter method or a CMOS imaging element driven by a global electronic shutter method is used.

[0015] (rolling electronic shutter system) FIG. 4 is a diagram showing the configuration of a unit pixel 620 in a rolling electronic shutter CMOS image sensor 600. In FIG. 4, each unit pixel (one pixel) 620 has one photodiode PD and four transistors (transfer transistor TX-Tr, reset transistor RST-Tr, amplifier transistor SF-Tr, and select transistor SEL-Tr). These components are connected as shown in FIG. 4. The transfer transistor TX transfers the charge accumulated in the photodiode PD. The floating diffusion (floating capacitance) FD functions as a charge storage unit that holds the charge transferred from the photodiode PD. The amplifier transistor SF-Tr forms a source follower circuit and outputs a signal corresponding to the potential of the floating diffusion FD. The reset transistor RST-Tr resets the potential of the floating diffusion FD and the charge of the photodiode PD. The select transistor SEL-Tr turns on when the pixel is selected and connects the floating diffusion FD to the vertical signal line 640. In FIG. 4, VDD indicates the power supply voltage.

[0016] 4 also shows a portion of the vertical drive circuit 630, illustrating the connection of the driver Dr within the vertical drive circuit 630. In FIG. 4, Vsel represents the control pulse for the select transistor SEL-Tr. When the control pulse Vsel for only the selected row goes high and the select transistor SEL-Tr turns on, a connection is made from the floating diffusion FD to the vertical signal line 640. Furthermore, Vrst represents the control pulse for the reset transistor RST-Tr. When resetting the photodiode PD or the floating diffusion FD, the control pulse Vrst goes high and the reset transistor RST-Tr turns on. Furthermore, Vtx represents the control pulse for the transfer transistor TX-Tr. When transferring the charge stored in the photodiode PD, the control pulse Vtx goes high and the transfer transistor TX-Tr turns on.

[0017] Figure 5 is a diagram showing the driving timing of the rolling electronic shutter, and shows the operation of pixels in the first and second rows as an example. In Figure 5, the control pulse for the select transistor SEL-Tr in the first row is denoted as Vsel_1, and the control pulse for the select transistor SEL-Tr in the second row is denoted as Vsel_2. The same applies to the control pulses for the other transistors. Furthermore, the horizontal transfer for the first row is denoted as horizontal transfer 1, and the horizontal transfer for the second row is denoted as horizontal transfer 2. Furthermore, one horizontal period (1H) represents the length of time it takes to read out one row. The above notations are also used in the other figures described below.

[0018] As shown in Figure 5, the timing of the photodiode PD reset (PD_rst) and the photodiode PD readout (PD_read) is offset by one horizontal period (1H) between the first and second rows. This is a characteristic of the rolling electronic shutter, and the period from the reset of the photodiode PD to the readout of the photodiode PD is the accumulation time (shutter time). For each row, the photodiode PD is reset at the beginning of the accumulation time. When the photodiode PD is reset, unnecessary charges accumulated in the photodiode PD up to that point are discharged through the reset transistor RST-Tr. After the accumulation time has elapsed, the photodiode PD is readout. When the photodiode PD is readout, the charge accumulated in the photodiode PD during the accumulation time is transferred to the floating diffusion FD, and a signal corresponding to the accumulated charge is readout to the vertical signal line 640 through the amplifier transistor SF-Tr and the select transistor SEL-Tr. Note that the timing of the reset of the photodiode PD and the readout of the photodiode PD is not limited to the illustrated timing. The image signal readout to the vertical signal line 640 passes through the column circuit and is horizontally transferred and output sequentially row by row.

[0019] Figure 6 is a diagram showing an overall image of the driving timing of a rolling electronic shutter, with the vertical axis representing the number of rows and the horizontal axis representing time. As explained in Figure 5, the accumulation time is the period between the resetting of the photodiode PD (PD_rst) and the reading out of the photodiode PD (PD_read). Horizontal transfer occurs immediately after reading from the photodiode PD. As shown in Figure 6, with a rolling electronic shutter, even though the intervals between accumulation times are the same, there is no simultaneity in accumulation for each row.

[0020] (Global electronic shutter system) Fig. 7 is a diagram showing the configuration of a unit pixel 720 in a global electronic shutter type CMOS image sensor 700. In Fig. 7, each unit pixel (one pixel) 720 has one photodiode PD, one storage capacitor SC, and five transistors (transfer transistor TX-Tr, reset transistor RST-Tr, amplifier transistor SF-Tr, select transistor SEL-Tr, and storage capacitor transfer transistor SG-Tr). These components are connected as shown in Fig. 7. Fig. 7 also shows a part of a vertical drive circuit 730, illustrating up to the connection of a driver Dr within the vertical drive circuit 730.

[0021] As shown in FIG. 7, the configuration of a unit pixel 720 of a global electronic shutter CMOS image sensor 700 is similar to that of the unit pixel 620 of the rolling electronic shutter CMOS image sensor 600 shown in FIG. 4, but with the addition of a storage capacitor SC and a storage capacitor transfer transistor SG-Tr. The storage capacitor SC functions as a charge storage unit that stores accumulated charges transferred from the photodiode PD by the transfer transistor TX-Tr. The storage capacitor transfer transistor SG-Tr functions as a transfer unit that transfers the accumulated charges stored in the storage capacitor SC to the floating diffusion FD. In addition, a control pulse Vsg that controls the storage capacitor transfer transistor SG-Tr is added as a control pulse. When the accumulated charges stored in the storage capacitor SG are to be transferred, the control pulse Vsg goes high and the storage capacitor transfer transistor SG-Tr turns on.

[0022] Figure 8 shows the drive timing of the global electronic shutter, illustrating the operation of pixels in the first and second rows as an example. As shown in Figure 8, the timing of resetting the photodiode PD and storage capacitor SC (PDSC_rst) and reading out the photodiode PD (PD_read) is the same for both rows. This is a feature of the global electronic shutter, and the period from resetting the photodiode PD and storage capacitor SC to reading out the photodiode PD is the accumulation time (shutter time). For each row, the photodiode PD and storage capacitor SC are reset at the beginning of the accumulation time. When resetting the photodiode PD and storage capacitor SC, unnecessary charges accumulated in the photodiode PD and storage capacitor SC are simultaneously discharged through the reset transistor RST-Tr for all pixels. After the accumulation time has elapsed, the photodiode PD is read out. When reading out the photodiode PD, the charges accumulated in the photodiode PD during the accumulation time are simultaneously transferred to the storage capacitor SC for all pixels. Then, the storage capacitor SC is read out (SC_read) sequentially for each row. When reading out the storage capacitor SC, the charge stored in the storage capacitor SC is transferred to the floating diffusion FD and then read out to the vertical signal line 740 through the source follower SF-Tr and select transistor SEL-Tr. Note that the timing for resetting the photodiode PD and storage capacitor SC, reading out the photodiode PD, and reading out the storage capacitor SC is not limited to the timing shown in the figure. The image signal read out onto the vertical signal line 740 passes through a column circuit, is transferred horizontally sequentially row by row, and is output.

[0023] Figure 9 is a diagram showing an overall image of the global electronic shutter drive timing, with the vertical axis representing the number of rows and the horizontal axis representing time. As explained in Figure 8, the accumulation time is the time between resetting the photodiode PD and storage capacitor SC (PDSC_rst) and reading out the photodiode PD (PD_read). After reading out the photodiode PD, the storage capacitor SC is read out (SC_read) and horizontal transfer is performed for each row. As shown in Figure 9, with global electronic shutter drive, all pixels accumulate simultaneously, but there is a time difference between each row when reading out the storage capacitor SC.

[0024] (Problems with rolling and global electronic shutters) The rolling electronic shutter lacks row-by-row accumulation synchronism, which causes moving objects to appear distorted in the image, making it unsuitable for subject recognition and subject tracking based on that recognition result. Even if an image sensor capable of high-speed rolling electronic shutter drive is used, image distortion cannot be eliminated in principle, and high-speed operation also creates the problem of increased power consumption. Furthermore, even when the rolling electronic shutter is used for AF (such as image plane phase detection AF or contrast AF), there is no vertical direction (same-row pixel accumulation synchronism), making it unsuitable for focusing on moving objects. AF is performed solely by relying on horizontal direction (same-row pixel accumulation synchronism), resulting in poor accuracy.

[0025] On the other hand, when a global electronic shutter is used, simultaneous transfer of the charge from the photodiodes PD ensures simultaneous accumulation of all pixels, so image distortion does not occur. However, there is a time difference in readout from the storage capacitor SC, which causes variations in dark current that appear in the image and degrades image quality. The last pixels to be read out from the storage capacitor SC are more susceptible to the effects of dark current. For example, in applications such as surveillance cameras, the image sensor is constantly operating, and the effects of dark current due to heat generation are more likely to appear in the image. For this reason, sufficient heat dissipation measures must be taken, and if the effects of dark current are significant, correction methods must also be considered.

[0026] Furthermore, with a global electronic shutter, the photodiode PD is reset and its charge is transferred simultaneously for all pixels, resulting in an instantaneous current several times larger than that of a rolling electronic shutter. This instantaneous current and the impedance of the power supply wiring cause a voltage drop, so image sensor chips are generally larger and the central part of the image sensor is more susceptible to the effects of the voltage drop. Specifically, the voltage drop can cause the dynamic range of the output signal to be insufficient or to fall outside the normal operating range of the onboard circuits. As these can cause a decrease in image quality, a waiting time must be provided until the instantaneous current subsides and the power supply voltage settles to a steady state, which can result in a decrease in frame rate.

[0027] (Overview of the image sensor of this embodiment) To solve this problem, the image sensor 101 of this embodiment drives a part of the area with a global electronic shutter and drives the other areas with a rolling electronic shutter when reading out one frame's worth of image signal. Examples of the part of the area driven by the global electronic shutter include a subject recognition area and an AF area. In this way, it is advisable to use the global electronic shutter when having pixel accumulation simultaneity provides higher functional accuracy.

[0028] The area to be driven by the global electronic shutter can be set either as a row area setting using consecutive rows, or as a block area setting using XY address specification, and it is also possible to select multiple discrete areas. When setting a block area, the target pixel area is specified using XY addresses, but this makes the circuit for setting the area more complex. When setting a row area, areas other than the target pixel area are often selected, but since there is no need to set the X address (horizontal direction) as with block area setting, the circuit does not become more complex.

[0029] (Imaging system of this embodiment) FIG. 10 is a diagram showing an example configuration of an imaging system 300 according to this embodiment. In the imaging system 300 according to this embodiment, a subject detection unit 302 detects a subject based on an image signal obtained by the image sensor 101. A processing execution unit 303 then performs subject recognition processing based on the detection result by the subject detection unit 302, and performs moving object prediction processing, subject tracking processing, and AF area selection processing based on the recognition result. Note that the body control device 102 of the camera body 100 is functionally equipped with the subject detection unit 302 and the processing execution unit 303. Unlike the conventional imaging system 500, the imaging system 300 according to this embodiment is configured to feed back the moving object prediction results, subject tracking results, and AF area selection results obtained by the processing execution unit 303 to the image sensor 101. By incorporating a circuit capable of storing this feedback information into the image sensor 101, it is possible to set the area to be operated by the global electronic shutter for each frame based on the feedback information.

[0030] The body control device 102 may be configured so that the user sets an area to focus on on the shooting screen, an AF area, etc., using the body operation unit 103, and the area set by the user is set as an area to be operated by the global electronic shutter. Also, in addition to the AF area used in AF processing (autofocus adjustment processing) and the subject recognition area used in subject recognition processing, moving object prediction processing, and subject tracking processing, areas used in AF processing (auto exposure calculation processing) and AWB processing (auto white balance adjustment processing) may also be set as areas to be operated by the global electronic shutter.

[0031] As described above, by operating areas such as the subject recognition area and AF area with the global electronic shutter and operating other areas with the rolling electronic shutter in the image sensor 101, the body control device 102 can perform subject recognition processing and AF processing based on the output signal of the area operated with the global electronic shutter. Also, the body control device 102 can read out one image signal (one frame) by combining the output signal of the area operated with the global electronic shutter and the output signal of the area operated with the rolling electronic shutter.

[0032] Furthermore, the body control device 102 can also crop (cut out during shooting) and read out only the target area by operating the global electronic shutter only on the target area, without driving the rolling electronic shutter on areas other than the target area in the image sensor 101. This can be achieved by changing the control logic of the peripheral circuits. For example, this can be achieved by having the vertical drive circuit 202 skip (skip) rows other than those set in the target area, or by narrowing down the area to be horizontally transferred based on information from the horizontal area setting circuit. In this way, cropping and reading out only the target area enables high-speed readout of only the target area (area with accumulation simultaneity).

[0033] Furthermore, all pixel readout of the image sensor 101 and high-speed readout of only the target area may be combined. For example, the body control device 102 performs all pixel readout in the previous frame and readout of only the target area in the current frame. The body control device 102 then creates an image of the entire shooting screen by combining the previous frame image, in which all pixels were read out in the previous frame, with the target area image, in which only the target area was cropped and read out in the current frame. At this time, the body control device 102 creates a single image by embedding the target area image in the current frame into the image of the area other than the target area in the previous frame image. In this way, an image of the entire shooting screen can be obtained even in the current frame, in which only the target area is read out at high speed. Note that when obtaining a composite image in this manner, it is preferable that the area other than the target area remains almost unchanged between the current and previous frames. Therefore, when the subject is moving, the body control device 102 predicts the movement of the moving object and sets a wide target area, thereby ensuring that the area other than the target area remains almost unchanged, thereby reducing the sense of incongruity of the composite image.

[0034] This technique of combining an all-pixel readout image with a cropped readout image of the target area is effective when the subject is moving at high speed. By cropping and reading out only the target area at high speed, high-speed tracking of fast-moving objects becomes possible, and by combining this with the all-pixel readout image, it can be treated as a single image.

[0035] Next, an example for realizing rolling electronic shutter driving and global electronic shutter driving in this embodiment will be described.

[0036] (First Example) First, a first example of this embodiment will be described. This first example is an example in which the area in which the global electronic shutter is driven is set in consecutive rows. FIG. 11 is a diagram showing the configuration of a unit pixel 220 of an image sensor 101 in the first example. FIG. 11 illustrates a portion of the vertical drive circuit 202, including the connection of a driver Dr within the vertical drive circuit 202. The unit pixel 220 includes a photodiode PD and a readout section 250 that reads out an image signal corresponding to the accumulated charge from the photodiode PD. The readout section 250 includes a transfer transistor TX-Tr, a storage capacitor SC, a storage capacitor transfer transistor SG-Tr, a floating diffusion FD, a reset transistor RST-Tr, an amplifier transistor SF-Tr, and a select transistor SEL-Tr. The configuration of this unit pixel 220 is the same as that of the unit pixel 720 of the global electronic shutter CMOS image sensor shown in FIG. 7, and therefore will not be described here.

[0037] In the first embodiment, a first vertical selector switch SW1 is provided in the vertical drive circuit 202 for switching the control pulse Vsg for controlling the storage capacitor transfer transistor SG-Tr between a control pulse Vsg_gs for the global electronic shutter and a control pulse Vsg_rs for the rolling electronic shutter. Furthermore, a second vertical selector switch SW2 is provided in the vertical drive circuit 202 for switching the control pulse Vtx for controlling the transfer transistor TX-Tr between a control pulse Vtx_gs for the global electronic shutter and a control pulse Vtx_rs for the rolling electronic shutter. The switching of the first vertical selector switch SW1 and the second vertical selector switch SW2 is controlled by a vertical area setting pulse input from a vertical area setting circuit 210 in the vertical drive circuit 202. The vertical area setting circuit 210 is a circuit for selecting a row (vertical area) for global electronic shutter drive, and outputs a vertical area setting pulse for the global electronic shutter to a row for global electronic shutter drive and a vertical area setting pulse for the rolling electronic shutter to a row for rolling electronic shutter drive.

[0038] In the row set as the area for global electronic shutter driving, the first vertical selector switch SW1 is switched to the [1] side in response to the vertical area setting pulse, and the storage capacitor transfer transistor SG-Tr is controlled by the control pulse Vsg_gs, and the second vertical selector switch SW2 is switched to the [1] side in response to the vertical area setting pulse, and the transfer transistor TX-Tr is controlled by the control pulse Vtx_gs.

[0039] On the other hand, in the row set as the area for rolling electronic shutter drive, the first vertical selector switch SW1 is switched to the [2] side in response to the vertical area setting pulse, the storage capacitor transfer transistor SG-Tr is controlled by the control pulse Vsg_rs, and the second vertical selector switch SW2 is switched to the [2] side in response to the vertical area setting pulse, and the transfer transistor TX-Tr is controlled by the control pulse Vtx_rs.

[0040] Fig. 12 is a diagram showing the timing of global electronic shutter drive (GS drive) and rolling electronic shutter drive (RS drive) in the first embodiment. Fig. 12 shows, as an example, the readout operation of one frame of image pickup signals from six rows of pixels. The accumulation time is 4H, and rows 1 to 3 and row 6 are driven by the rolling electronic shutter, while rows 4 and 5 are driven by the global electronic shutter. This means that rows 3 to 5 have simultaneous accumulation times.

[0041] First, we will explain rolling electronic shutter drive using the first row as an example. During the high period of the control pulses Vrst_1, Vtx_1, and Vsg_1 in the first horizontal block, the reset transistor RST-Tr, transfer transistor TX-Tr, and storage capacitor transfer transistor SG-Tr are turned on, resetting the photodiode PD and the storage capacitor SC simultaneously (PDSC_rst). In the fifth horizontal block after the 4-hour accumulation time has elapsed, the control pulse Vsel_1 goes high, turning on the select transistor SEL-Tr and selecting the first row. Then, after the control pulse Vrst_1 goes low and the reset transistor RST-T is turned off, the control pulses Vtx_1 and Vsg_1 go high simultaneously, turning on the transfer transistor TX-Tr and storage capacitor transfer transistor SG-Tr simultaneously. As a result, the charge accumulated in the photodiode PD during the accumulation time is transferred to the storage capacitor SC and floating diffusion FD, and an image signal corresponding to the accumulated charge is read out (PD_read) to the vertical signal line 240 through the amplification transistor SF-Tr and select transistor SEL-Tr and output by horizontal transfer. The other rolling electronic shutter driven rows 2, 3, and 6 operate in a similar manner, with the drive timing shifted by 1H for each row.

[0042] Next, we will explain global electronic shutter driving using row 4 as an example. In the operation of 3H, the photodiode PD and the storage capacitor SC are reset simultaneously (PDSC_rst), just like row 3. In other words, the reset timing of the photodiode PD is the same as row 3.

[0043] On the 7th row, after 4 hours of charge accumulation, the control pulse Vtx_4 goes high, turning on the transfer transistor TX-Tr, and the charge accumulated during the accumulation time is transferred from the photodiode PD to the storage capacitor SC (PD_read). This transfer timing from the photodiode PD to the storage capacitor SC is the same as that of the third row, demonstrating that the synchronism of the accumulation time with the third row is maintained. The readout operation from the storage capacitor SC begins after a delay to synchronize with the rolling electronic shutter drive. In the example of the fourth row, on the 8th row, 1 hour after the charge transfer to the storage capacitor SC, the control pulse Vsel_4 goes high, turning on the select transistor SEL-Tr and selecting the fourth row. Then, the control pulse Vrst_4 goes low, turning off the reset transistor RST-T, and then the control pulse Vsg_4 goes high, turning on the storage capacitor transfer transistor SG-Tr. As a result, the accumulated charge held in the storage capacitor SC is transferred to the floating diffusion FD, and a signal corresponding to the accumulated charge is read out (SC_read) to the vertical signal line 240 through the amplification transistor SF-Tr and the select transistor SEL-Tr and output by horizontal transfer. The same operation is performed on the fifth row of the other global electronic shutter drive, and the operation timing maintains synchronization of the accumulation time with the third and fourth rows.

[0044] FIG. 13 is a diagram showing an overall image of the rolling electronic shutter and global electronic shutter drive timing in the first embodiment, with the vertical axis representing the number of rows and the horizontal axis representing time. The accumulation time is the time between resetting the photodiode PD and the storage capacitor SC (PDSC_rst) and reading out the photodiode PD (PD_read). Only when the global electronic shutter is driven is the storage capacitor SC read (SC_read) performed after the photodiode PD read (PD_read), followed by horizontal transfer. As shown in FIG. 13, it can be seen that there is simultaneous accumulation of pixels in rows 3 to 5, but that the accumulation times of pixels in the other rows are different.

[0045] In the first embodiment, a plurality of row areas for which the global electronic shutter is driven can be set within the pixel area 201. For example, Fig. 14 shows an example in which three row areas LA1, LA2, and LA3 are set as row areas for which the global electronic shutter is driven. Note that the row areas LA1, LA2, and LA3 are areas separated from one another, and each row area includes a plurality of consecutive rows. In this way, in the first embodiment, a plurality of row areas for which the global electronic shutter is driven, i.e., areas with accumulation simultaneity, can be set.

[0046] (Second Example) Next, a second example according to this embodiment will be described. Like the first example, the second example is also an example in which an area in which the global electronic shutter is driven is set in consecutive rows. Like the first example, the second example also allows for setting multiple row areas in which the global electronic shutter is driven. FIG. 15 is a diagram showing the configuration of a unit pixel 220 of an image sensor 101 in the second example. FIG. 15 shows a part of a vertical drive circuit 202, illustrating up to the connection of a driver Dr within the vertical drive circuit 202. The configuration of the unit pixel 220 is the same as that of the first example (i.e., the same as that of the unit pixel 720 of the global electronic shutter type CMOS image sensor in FIG. 7), and therefore description thereof will be omitted.

[0047] In the second embodiment, a vertical selector switch SW is provided in the vertical drive circuit 202 to switch the control pulse Vtx for controlling the transfer transistor TX-Tr between a control pulse Vtx_gs for the global electronic shutter and a control pulse Vtx_rs for the rolling electronic shutter. The switching of the vertical selector switch SW is controlled by a vertical area setting pulse input from a vertical area setting circuit 210 in the vertical drive circuit 202. Unlike the first embodiment, the second embodiment does not have a vertical selector switch for switching the control pulse Vsg for controlling the storage capacitor transfer transistor SG-Tr, and therefore has a simpler configuration than the first embodiment.

[0048] In a row set as an area for performing global electronic shutter drive, the vertical selector switch SW is switched to the [1] side in response to the vertical area setting pulse, and the transfer transistor TX-Tr is controlled by the control pulse Vtx_gs. On the other hand, in a row set as an area for performing rolling electronic shutter drive, the vertical selector switch SW is switched to the [2] side in response to the vertical area setting pulse, and the transfer transistor TX-Tr is controlled by the control pulse Vtx_rs.

[0049] FIG. 16 is a diagram showing the timing of global electronic shutter drive and rolling electronic shutter drive in the second embodiment. FIG. 16 shows, as an example, the readout operation of one frame of image pickup signals from six rows of pixels. The accumulation time is 4H, and rows 1 to 3 and row 6 are driven by the rolling electronic shutter, while rows 4 and 5 are driven by the global electronic shutter. Rows 3 to 5 have simultaneous accumulation times. The explanation of the rolling electronic shutter drive timing used for rows 1 to 3 and row 6 is the same as in the first embodiment (FIG. 12), so it will not be repeated here.

[0050] Next, we will explain global electronic shutter driving using the fourth row as an example. At the 3rd horizontal line, the control pulse Vtx_3 goes high, the transfer transistor TX-Tr is turned on, and the charge accumulated in the photodiode PD is temporarily transferred to the storage capacitor SC, emptying the photodiode PD. This corresponds to resetting the photodiode PD (PD_rst). In this way, the reset timing of the photodiode PD is the same as that of the third row.

[0051] Then, in the 4th horizontal period, during the high period of the control pulses Vrst_4 and Vsg_4, the reset transistor RST-Tr and the storage capacitor transfer transistor SG-Tr are turned on, and the charge of the photodiode PD that had been temporarily transferred to the storage capacitor SC is reset through the storage capacitor SC (SC_rst). This resetting of the storage capacitor SC is synchronized with the rolling electronic shutter drive. This is because in the second embodiment, the control pulse of the storage capacitor transfer transistor SG-Tr is common to both the rolling electronic shutter and the global electronic shutter.

[0052] Then, on the 7th horizontal row, after 4 hours of charge accumulation from the 3rd horizontal row, the control pulse Vtx_4 goes high, turning on the transfer transistor TX-Tr, and transferring the charge accumulated during the accumulation time from the photodiode PD to the storage capacitor SC. This transfer timing from the photodiode PD to the storage capacitor SC is the same as that of the 3rd horizontal row, maintaining synchronism between the accumulation time and the 3rd horizontal row. The subsequent operation is the same as in the first embodiment. That is, the readout operation from the storage capacitor SC begins after a delay to synchronize with the rolling electronic shutter drive. In the example of the 4th horizontal row, on the 8th horizontal row, 1 hour after the charge transfer to the storage capacitor SC, the control pulse Vsel_4 goes high, turning on the select transistor SEL-Tr, and selecting the 4th horizontal row. Then, the control pulse Vrst_4 goes low, turning off the reset transistor RST-T, and then the control pulse Vsg_4 goes high, turning on the storage capacitor transfer transistor SG-Tr. As a result, the charge held in the storage capacitor SC is transferred to the floating diffusion FD, and a signal corresponding to the stored charge is read out (SC_read) to the vertical signal line 240 through the amplification transistor SF-Tr and the select transistor SEL-Tr and output by horizontal transfer. The same operation is performed for the fifth row of the other global electronic shutter drive, and the drive timing maintains synchronization of the storage time with the third and fourth rows.

[0053] Figure 17 is a diagram showing an overall image of the driving timing of the rolling electronic shutter and the global electronic shutter of the second embodiment, with the vertical axis representing the number of rows and the horizontal axis representing time. Figure 17(A) shows an overall image of the driving timing exemplified in Figure 16, and compared to the first embodiment, it can be seen that when the global electronic shutter is driven, the resetting of the storage capacitor SC (SC_rst) is performed after the resetting of the photodiode PD (PD_rst). Other than this, it is the same as the first embodiment in Figure 13.

[0054] However, in the second embodiment, unlike the first embodiment, there is a restriction on the size of the area in which the global electronic shutter is driven. FIG. 17B is a diagram illustrating this restriction. FIG. 17B shows an example in which the fourth to seventh rows are driven by the global electronic shutter. As shown in FIG. 17B, if the number of rows in which the global electronic shutter is driven is increased, the timing of resetting the storage capacitor SC (SC_rst) and reading out the photodiode PD (PD_read) will be simultaneous in the seventh row. As a result, even if the charge accumulated in the photodiode PD is read out and transferred to the storage capacitor SC, the storage capacitor SC will be reset, and the charge accumulated in the photodiode PD will be reset. Furthermore, although not shown, if the global electronic shutter is driven on the eighth row and beyond, the order of the operations of resetting the storage capacitor SC (SC_rst) and reading out the photodiode PD (PD_read) will be reversed, and the charge accumulated in the photodiode PD will be reset by the resetting of the storage capacitor SC (PD_read), just like in the seventh row.

[0055] Therefore, in the second embodiment, when the accumulation time is 4H, global electronic shutter drive is possible for up to three consecutive rows (simultaneous accumulation for up to four consecutive rows). Therefore, the limit of the drive method in the second embodiment is when the number of horizontal periods α that determines the accumulation time matches the number of consecutive rows β that are simultaneously accumulated, resulting in the constraint α≧β. However, despite this constraint, the second embodiment has the advantage that it can be implemented simply by switching the control pulse Vtx of the transfer transistor TX-Tr between the rolling electronic shutter and the global electronic shutter. This is effective for applications that do not require a high-speed shutter (i.e., where a long accumulation time is acceptable).

[0056] (Third Example) The third embodiment is an example in which the area in which the global electronic shutter is driven is set as a block area by XY addressing. FIG. 18A shows the configuration of a unit pixel 220 of an image sensor 101 in the third embodiment. FIG. 18 illustrates a portion of a vertical drive circuit 202, showing the connection of a driver Dr within the vertical drive circuit 202. The unit pixel 220 in the third embodiment has the same configuration as that of the first embodiment (i.e., the same configuration as the unit pixel 720 of the global electronic shutter CMOS image sensor in FIG. 7), but also includes a first block area selector switch BS1 that controls a storage capacitor transfer transistor SG-Tr and a second block area selector switch BS2 that controls a transfer transistor TX-Tr. The first block area selector switch BS1 and the second block area selector switch BS2 are used to set the area in the X direction (horizontal direction). The switching of the first block area selector switch BS1 and the second block area selector switch BS2 is controlled by a horizontal area setting pulse input from a horizontal area setting circuit 260. The first block area changeover switch BS1 and the second block area changeover switch BS2 are configured by transistors as shown in FIG. 18(B), but are shown in a simplified manner in FIG. 18(A).

[0057] The horizontal area setting circuit 260 is a circuit for selecting the column (horizontal area) for which global electronic shutter drive is to be performed, and outputs a horizontal area setting pulse for the global electronic shutter to the column that includes the block area for which global electronic shutter drive is to be performed, and outputs a horizontal area setting pulse for the rolling electronic shutter to the column that does not include the block area.

[0058] In the third embodiment, as in the first embodiment, a first vertical selector switch SW1 is provided in the vertical drive circuit 202 for switching the control pulse Vsg for controlling the storage capacitor transfer transistor SG-Tr between a control pulse Vsg_gs for the global electronic shutter and a control pulse Vsg_rs for the rolling electronic shutter. Furthermore, a second vertical selector switch SW2 is provided in the vertical drive circuit 202 for switching the control pulse Vtx for controlling the transfer transistor TX-Tr between a control pulse Vtx_gs for the global electronic shutter and a control pulse Vtx_rs for the rolling electronic shutter. The switching of the first vertical selector switch SW1 and the second vertical selector switch SW2 is controlled by a vertical area setting pulse input from a vertical area setting circuit 210 in the vertical drive circuit 202.

[0059] The vertical area setting circuit 210 outputs a vertical area setting pulse for the global electronic shutter to rows that include a block area for performing global electronic shutter drive, and outputs a vertical area setting pulse for the rolling electronic shutter to rows that do not include a block area.

[0060] Furthermore, in the third embodiment, in addition to the same configuration as the first embodiment, rolling electronic shutter dedicated drive lines sg_rs and tx_rs to which control pulses Vsg_rs and Vtx_rs for the rolling electronic shutter are input are provided, and a driver Dr is added to each of the rolling electronic shutter dedicated drive lines sg_rs and tx_rs. The rolling electronic shutter dedicated drive lines sg_rs and tx_rs are connected to the [1] side of the first block area selector switch BS1 and the second block area selector switch BS2, respectively.

[0061] In a row including a block area for which the global electronic shutter is driven, the first vertical selector switch SW1 and the second vertical selector switch SW2 are each switched to the [1] side in response to the vertical area setting pulse, whereby the global electronic shutter control pulses Vsg_gs and Vtx_gs are input to the [2] sides of the first block area selector switch BS1 and the second block area selector switch BS2, respectively.

[0062] On the other hand, in rows that do not include a block area for which global electronic shutter driving is performed, the first vertical selector switch SW1 and the second vertical selector switch SW2 are each switched to the [2] side in response to the vertical area setting pulse, whereby the control pulses Vsg_rs and Vtx_rs for the rolling electronic shutter are input to the [2] sides of the first block area selector switch BS1 and the second block area selector switch BS2, respectively.

[0063] In addition, in a column including a block area for which global electronic shutter driving is performed, the first block area changeover switch BS1 and the second block area changeover switch BS2 are each switched to the [2] side in response to the horizontal area setting pulse.

[0064] On the other hand, in a column that does not include a block area for which global electronic shutter driving is performed, the first block area changeover switch BS1 and the second block area changeover switch BS2 are each changed over to the [1] side in response to the horizontal area setting pulse.

[0065] With this configuration, it is possible to drive the specified block area with the global electronic shutter and drive other areas with the rolling electronic shutter. The block area for which the global electronic shutter is driven can also be set from outside the image sensor 101, as long as the image sensor 101 is designed to be able to set the block area through register settings. This makes it possible to move or resize the block area for which the global electronic shutter is driven for each frame, even when the moving object prediction result or the AF area selection result is fed back to the image sensor 101. Note that the block area does not have to be set in units of one pixel or one line, but can be set in units of several pixels or several lines, which allows for simplification of the logic circuit.

[0066] Next, the prerequisites for setting the block area in the third embodiment will be described. <Prerequisites for setting block areas> (1) A block area can be set once per frame. (2) Even if there is only one horizontal area setting circuit 260 and one vertical area setting circuit 210, it is possible to set a plurality of block areas with one setting. (3) When readout rows or readout columns overlap in multiple block areas, the overlapping range is set as one block area.

[0067] (First example of setting a block area) FIG. 19 is a diagram showing a first setting example of a block area to be driven by the global electronic shutter. This is an example in which the image sensor 101 has one horizontal area setting circuit 260 and one vertical area setting circuit 210, and one block area is set. As shown in FIG. 19(A), a block area A is set in a pixel area 201 with m rows and n columns. The signals to be read out have accumulation simultaneity in the entire first row (row a) in which block area A is located and in block area A. The first row (row a) in which block area A is located is driven by the rolling electronic shutter, and rows other than the first row of block area A are driven by the global electronic shutter. As shown in FIG. 19(B), the entire row a and block area A have accumulation simultaneity.

[0068] 19(C) is a diagram showing the driving status of each region in the pixel area 201. Drive A indicates rolling electronic shutter driving. The Drive A region is a region in a column that does not include a block area. In the Drive A region, the first block area selector switch BS1 and the second block area selector switch BS2 are switched to the [1] side within the pixel, and the transfer transistor TX-Tr and the storage capacitor transfer transistor SG-Tr are controlled by control pulses Vsg_rs and Vtx_rs for the rolling electronic shutter.

[0069] Drive B also indicates rolling electronic shutter drive. The Drive B region is a region in a column including a block area, but is not a block area. In the Drive B region, the first block area selector switch BS1 and the second block area selector switch BS2 are switched to the [2] side within the pixel. Furthermore, the first vertical selector switch SW1 and the second vertical selector switch SW2 in the vertical drive circuit 202 are switched to the [2] side, whereby the transfer transistor TX-Tr and the storage capacitor transfer transistor SG-Tr within the pixel are controlled by control pulses Vsg_rs and Vtx_rs for the rolling electronic shutter.

[0070] Drive C indicates global electronic shutter drive. The region of Drive C is the block area region. In the region of Drive C, the first block area selector switch BS1 and the second block area selector switch BS2 are switched to the [2] side within the pixel. Furthermore, the first vertical selector switch SW1 and the second vertical selector switch SW2 within the vertical drive circuit 202 are switched to the [1] side, whereby the transfer transistor TX-Tr and the storage capacitor transfer transistor SG-Tr within the pixel are controlled by the global electronic shutter control pulses Vsg_rs and Vtx_rs.

[0071] FIG. 20 is a diagram showing the drive timing of the global electronic shutter and the rolling electronic shutter in the third embodiment. This timing diagram shows the state before and after the first row (row a) of block area A in FIG. 19, where readout begins. The rolling electronic shutter is used up to the first row (row a) of block area A, and the "row a-1 and row a" in FIG. 20 show this timing. Next, from row a+1 onwards, the timing of the control pulse Vtx and control pulse Vsg differs inside and outside block area A. As shown in FIG. 20, within block area A, operation is performed at the same accumulation timing as row a.

[0072] The pixels within block area A are controlled by control pulses Vtx_gs and Vsg_gs to perform global electronic shutter drive, while the pixels outside block area A are controlled by control pulses Vtx_rs and Vsg_rs to perform rolling electronic shutter drive. The control pulses Vsel and Vrst and horizontal transfer have the same timing both inside and outside block area A. Although not shown, readout by global electronic shutter drive within block area A and readout by rolling electronic shutter drive outside block area A continue until the final readout row of block area A is reached.

[0073] Next, an example will be shown in which two block areas are set in an image sensor 101 having one horizontal area setting circuit 260 and one vertical area setting circuit 210. Since the way in which the two block areas are read out during global electronic shutter driving differs depending on the positional relationship between the two block areas, three block area setting examples, second to fourth, will be explained below. These three patterns cover all positional relationships between two block areas.

[0074] (Second example of setting the block area) FIG. 21 is a diagram showing a second setting example of block areas to be driven by the global electronic shutter. This example shows a case where the readout rows and readout columns of two block areas do not overlap. As shown in FIG. 21(A), block areas A and B are set in a pixel area 201 with m rows and n columns. FIG. 21(B) shows an area with accumulation simultaneity, and according to the prerequisites for setting the block areas described above, areas other than block areas A and B will also be read out by global electronic shutter driving. Area C, which is in the same row and column as block area A, and area D, which is in the same row and column as block area B, are areas that are not set as block areas but will be read out by global electronic shutter driving. Therefore, all of row a, block areas A, and area C have accumulation simultaneity, and all of row b, block areas B, and area D have accumulation simultaneity.

[0075] Although the global electronic shutter is also driven for parts of areas other than those set as block areas, the accumulation simultaneity within the same block area, which is important in the present invention, is maintained. As such, it can be seen that accumulation simultaneity in multiple block areas can be ensured even in an image sensor 101 that has only one horizontal area setting circuit 260 and one vertical area setting circuit 210.

[0076] 21(C) shows the driving status of each region in the pixel area 201. The explanation of each region for drives A, B, and C is the same as in the first setting example of the block area, so the explanation will be omitted.

[0077] (Third example of setting the block area) FIG. 22 is a diagram showing a third example of setting a block area to be driven by the global electronic shutter. This example shows a case where the readout columns of two block areas overlap. As shown in FIG. 22(A), block areas A and B are set in a pixel area 201 with m rows and n columns. FIG. 22(B) shows an area with accumulation simultaneity, and according to the preconditions for setting the block areas described above, parts other than block areas A and B will also be read out by the global electronic shutter. According to the precondition (3) for setting the block areas, the horizontal area setting circuit 260 sets a range K (the range from the left end of block area A to the right end of block area B) wider than the individual areas of block areas A and B as the columns (horizontal area) to be driven by the global electronic shutter. An adjacent area C to the right of block area A and an adjacent area D to the left of block area B are not set as block areas, but are areas to be read out by the global electronic shutter. Therefore, all of the a-th row, block area A, and area C have accumulation simultaneity, and all of the b-th row, block area B, and area D have accumulation simultaneity.

[0078] 21, areas other than the block areas are also partially driven by the global electronic shutter, but the accumulation simultaneity within the same block area, which is important in the present invention, is maintained. As such, it can be seen that accumulation simultaneity in multiple block areas can be ensured even in an image sensor 101 that has only one horizontal area setting circuit 260 and one vertical area setting circuit 210.

[0079] 22(C) shows the driving status of each region in the pixel area 201. The explanation of each region for drives A, B, and C is the same as in the first setting example of the block area, so the explanation will be omitted.

[0080] (Fourth example of setting the block area) FIG. 23 shows a fourth example of setting a block area to be driven by the global electronic shutter. This example shows a case where the readout rows of two block areas overlap. As shown in FIG. 23(A), block areas A and B are set in a pixel area 201 with m rows and n columns. FIG. 23(B) shows an area with accumulation simultaneity, and due to the preconditions for block area setting described above, areas other than block areas A and B are also partially readout by global electronic shutter driving. Due to the precondition (3) for block area setting, the vertical area setting circuit 210 sets a range J (from the bottom end of block area A to the top end of block area B) wider than the individual areas of block areas A and B as the row (vertical area) to be driven by the global electronic shutter. Area C adjacent to the upper side of block area A and area D adjacent to the lower side of block area B are areas that are not set as block areas but are readout by global electronic shutter driving. Therefore, all of row a, block areas A and B, and areas C and D have accumulation simultaneity.

[0081] 21 and 22, areas other than the block areas are also partially electronically shuttered, but the accumulation simultaneity within the same block area, which is important in the present invention, is maintained. As such, it can be seen that accumulation simultaneity in multiple block areas can be ensured even in an image sensor 101 that has only one horizontal area setting circuit 260 and one vertical area setting circuit 210.

[0082] 23(C) shows the driving status of each region in the pixel area 201. The explanation of each region for drives A, B, and C is the same as in the first setting example of the block area, and therefore will not be repeated.

[0083] In the second to fourth block area setting examples described above, the case where two block areas are set has been explained, but it is easy to see that even when three or more block areas are set, the accumulation simultaneity of the multiple block areas is ensured. However, when there is only one horizontal area setting circuit 260 and one vertical area setting circuit 210 as described above, as the number of block areas increases, the area driven by the global electronic shutter other than the set locations of the block areas increases, and problems specific to the global electronic shutter, such as variations in dark current and instantaneous current, begin to appear.

[0084] In order to alleviate this problem with the global electronic shutter, it is necessary to prevent the area in which the global electronic shutter is driven from increasing outside the set location of the block area. An embodiment that solves this problem will be described below as a fourth embodiment.

[0085] (Fourth Example) The image sensor 101 according to the fourth embodiment has two horizontal area setting circuits and two vertical area setting circuits. Although not shown, having two horizontal area setting circuits and two vertical area setting circuits requires changing the horizontal selector switch in the unit pixel 220 to a three-input switch compared to the configuration shown in Fig. 18, and providing another set of output lines for the control pulse Vsg of the storage capacitor transfer transistor SG-Tr and the control pulse Vtx of the transfer transistor TX-Tr in the vertical drive circuit 202.

[0086] FIG. 24 illustrates the relationship between the arrangement of block areas and the settings of vertical and horizontal areas in the fourth embodiment. FIGS. 24A, 24B, and 24C correspond to the arrangements of block areas in FIGS. 21A, 22A, and 23A, respectively. The image sensor 101 of the fourth embodiment has two horizontal area setting circuits (first horizontal area setting circuit and second horizontal area setting circuit) and two vertical area setting circuits (first vertical area setting circuit and second vertical area setting circuit). In FIGS. 24A, 24B, and 24C, for block area A, the horizontal area A is set by the first horizontal area setting circuit, and the vertical area A is set by the first vertical area setting circuit. For block area B, the horizontal area B is set by the second horizontal area setting circuit, and the vertical area B is set by the second vertical area setting circuit. In the case shown in FIG. 24A, the a-th row and block area A have accumulation simultaneity, and the b-th row and block area B have accumulation simultaneity. 24(B), the a-th row and block area A have accumulation simultaneity, and the b-th row and block area B have accumulation simultaneity. In the case shown in FIG. 24(C), the a-th row and block area A have accumulation simultaneity, and the b-th row other than block area A and block area B have accumulation simultaneity.

[0087] In this way, by having two horizontal area setting circuits and two vertical area setting circuits, it is possible to have one-to-one correspondence between two block areas and the horizontal area setting circuits and the vertical area setting circuits, and it is possible to read out only the set areas of the block areas by global electronic shutter drive. If there are more horizontal area setting circuits and vertical area setting circuits than the number of block areas, there will be no areas other than the set areas of the block areas that will be driven by the global electronic shutter, and problems with global electronic shutter drive will also be reduced. In other words, by having multiple horizontal area setting circuits and vertical area setting circuits, it is possible to accommodate multiple block areas while reducing the problems with global electronic shutter drive.

[0088] However, if multiple horizontal area setting circuits and vertical area setting circuits are provided on a plane (two-dimensional surface) in the image sensor 101, it will also be necessary to increase the number of inputs to the block area switching switches within the pixels and to add output lines for the control pulses Vsg and Vtx of the vertical drive circuit 202. Although a few circuits would be sufficient, increasing the number of circuits will complicate the circuit configuration within the pixels and around the pixel area 201, and will also increase the number of control lines for driving the pixels, which will force the area of ​​the photodiode PD to be reduced for driving, leading to a deterioration in basic performance.

[0089] In order to avoid the performance degradation that occurs as a result of this, it is effective to stack peripheral circuits, in-pixel switches, etc. on the pixel area 201 and implement them three-dimensionally, rather than arranging multiple circuits on a plane.

[0090] According to the above-described embodiment, the following effects can be obtained. (1) The image sensor 101 has pixels 220, each including a photodiode PD that converts light into an electric charge, and a readout unit 250 that reads out an image signal generated from the electric charge photoelectrically converted by the photodiode PD. The control unit 206 of the image sensor 101 controls the readout unit 250 to read out image signals from some of the pixels 220 using a first electronic shutter method and to read out image signals from other pixels 220 using a second electronic shutter method that is different from the first electronic shutter method. With this configuration, image signals using multiple electronic shutter methods can be obtained within one frame.

[0091] (2) The first electronic shutter method described above is a global electronic shutter method, and the second electronic shutter method described above is a rolling electronic shutter method. By using the global electronic shutter method in areas where pixel accumulation simultaneity is desirable, and the rolling electronic shutter method in other areas, it is possible to compensate for the respective disadvantages of the global electronic shutter method and the rolling electronic shutter method described above.

[0092] (3) The image sensor 101 includes a plurality of pixels 220 arranged two-dimensionally in the row and column directions. Each pixel 220 includes a photodiode PD that accumulates charge according to the amount of incident light, and a readout unit 250 that reads out an image signal according to the accumulated charge in the photodiode PD. The readout unit 250 is configured to support both the global electronic shutter method and the rolling electronic shutter method. When reading out one frame's worth of image signal, image signals are read out from some of the pixels 220 using the global electronic shutter method, and image signals are read out from the remaining pixels 220 using the rolling electronic shutter method. This configuration makes it possible to obtain image signals using both the rolling electronic shutter method and the global electronic shutter method within one frame. By using the global electronic shutter method in areas where pixel accumulation simultaneity is desirable and the rolling electronic shutter method in other areas, the disadvantages of the global electronic shutter method and the rolling electronic shutter method can be compensated for.

[0093] (4) The image sensor 101 includes one vertical area setting circuit 210 that selects the row of pixels to be read out by the global electronic shutter system and one horizontal area setting circuit 260 that selects the column of pixels to be read out by the global electronic shutter system. This makes it possible to set the block area of ​​pixels to be read out by the global electronic shutter system with a simple configuration.

[0094] (5) In the camera body 100, the body control device 102 uses image signals read out from the image sensor 101 using the global electronic shutter method to perform at least one of focus adjustment processing, exposure calculation processing, white balance adjustment processing, subject recognition processing, moving object prediction processing, and subject tracking processing. This configuration makes it possible to perform the above-mentioned processing using image signals from an area having pixel accumulation synchronism. Furthermore, based on the results of the above-mentioned processing, the body control device 102 determines the pixels in the image sensor 101 from which image signals are read out using the global electronic shutter method. This configuration makes it possible to feed back the results of the above-mentioned processing to the setting of the area from which images are read out using the global electronic shutter method.

[0095] (4) The image sensor 101 includes a plurality of pixels 220 arranged two-dimensionally in the row and column directions. Each pixel 220 includes a photodiode PD that accumulates charge according to the amount of incident light, and a readout unit 250 that reads out an image signal according to the accumulated charge in the photodiode PD. The readout unit 250 is configured to support both the global electronic shutter method and the rolling electronic shutter method. When reading out one frame's worth of image signals, image signals are read out from some of the pixels 220 using the global electronic shutter method, and image signals are read out from the remaining pixels 220 using the rolling electronic shutter method. This configuration makes it possible to obtain image signals using both the rolling electronic shutter method and the global electronic shutter method within one frame. By using the global electronic shutter method in areas where pixel accumulation simultaneity is desirable and the rolling electronic shutter method in other areas, the disadvantages of the global electronic shutter method and the rolling electronic shutter method can be compensated for.

[0096] (5) The image sensor 101 includes one vertical area setting circuit 210 that selects a row of pixels to be read out using the global electronic shutter system, and one horizontal area setting circuit 260 that selects a column of pixels to be read out using the global electronic shutter system. This makes it possible to set a block area of ​​pixels to be read out using the global electronic shutter system with a simple configuration.

[0097] -Second embodiment- Next, a second embodiment of the present invention will be described with reference to the drawings. The configuration of the digital camera and the overall configuration of the image sensor in the second embodiment are similar to the configuration of the digital camera (FIG. 1) and the overall configuration of the image sensor 101 (FIG. 2) in the first embodiment, and therefore description thereof will be omitted. The image sensor 101 in the second embodiment is configured so that, in reading out one frame's worth of image signals, image signals are read out from all pixels in the pixel area 201 using the rolling electronic shutter method, while image signals are read out from pixels in a set partial area using the global electronic shutter method. Note that, here, "all pixels" refers to pixels for generating an image of the entire shooting screen, including the case where some pixels such as defective pixels are excluded.

[0098] FIG. 25 is a diagram showing an example of an area (GS area) Ag set to drive the global electronic shutter within the pixel area 201. The body control device 102 sets the GS area Ag for the image sensor 101. As shown in FIG. 25, multiple GS areas Ag can be set within the pixel area 201. The shape of the GS area Ag can also be set to a horizontally long rectangle, a vertically long rectangle, a cross, or other shapes. As in the first embodiment, the GS area Ag can be set to an AF area used in AF processing, a subject recognition area used in subject recognition processing, moving object prediction processing, and subject tracking processing, as well as an area used in AF processing and AWB processing, and other areas where it is desirable to have accumulation simultaneity.

[0099] 26 is a diagram showing an example of the configuration of an imaging system 300 according to the second embodiment. An image signal (GS signal) read from the GS area using global electronic shutter drive and an image signal (RS signal) read from all pixels using rolling electronic shutter drive are output from the imaging element 101 and sent to a signal processing unit 305. The signal processing unit 305 is included in the body control device 102 of the camera body 100.

[0100] The GS signal sent to the signal processing unit 305 is subjected to a predetermined offset by an offset circuit 310, a predetermined gain by a gain circuit 311, and then sent to an AF / AE / AWB unit 312, an adder 313, and an image processing unit 317. The AF / AE / AWB unit 312 performs AF processing, AE processing, and AWB processing based on the GS signal. The RS signal sent to the signal processing unit 305 is subjected to a predetermined offset by an offset circuit 314, a predetermined gain by a gain circuit 315, and then sent to an adder 313. The adder 313 adds the GS signal and the RS signal to generate one frame of image signal. The addition processing by the adder 313 will be described in detail later. The image signal generated by the adder 313 is recorded in a memory 316, or is subjected to predetermined image processing by an image processing unit 317. The image processing unit 317 also performs subject recognition processing using the GS signal and the RS signal, and performs moving object prediction processing, subject tracking processing, AF area selection processing, and the like based on the recognition results. The moving object prediction results, subject tracking results, and AF area selection results obtained by the image processing unit 317 are fed back to the setting of the GS area, and the GS area is set based on these results.

[0101] 27 is a diagram showing the configuration of a unit pixel 220 of the image sensor 101 according to the second embodiment. The unit pixel (one pixel) 220 has one photodiode PD and a readout section 250 that reads out an image signal corresponding to the accumulated charge from the photodiode PD. The readout section 250 has an RS readout circuit for the rolling electronic shutter and a GS readout circuit for the global electronic shutter, each connected to the photodiode PD.

[0102] The RS readout circuit includes a transfer transistor TX1, a floating diffusion FD1, an amplifier transistor SF1, and a select transistor S1. The transfer transistor TX1 transfers the charge accumulated in the photodiode PD. The floating diffusion FD functions as a charge storage unit that holds the accumulated charge transferred from the photodiode PD. The amplifier transistor SF1 forms a source follower circuit and outputs a signal corresponding to the potential of the floating diffusion FD. The select transistor S1 turns on when a pixel is selected and connects the floating diffusion FD1 to the output line Out1. These components are connected as shown in Figure 27. The RS readout circuit reads out the accumulated charge in the photodiode PD using a rolling electronic shutter drive and outputs an image signal corresponding to the accumulated charge to the output line Out1.

[0103] The GS readout circuit includes a storage capacitor SG, a transfer transistor TX2, a floating diffusion FD2, an amplifier transistor SF2, and a select transistor S2. The storage capacitor SG functions as a charge storage unit that holds the charge accumulated in the photodiode PD. When the gate of the storage capacitor SG is opened, the accumulated charge in the photodiode PD is transferred to the storage capacitor SG. The transfer transistor TX2 transfers the charge held in the storage capacitor SG. The floating diffusion FD1 functions as a charge storage unit that holds the accumulated charge transferred by the transfer transistor TX2. The amplifier transistor SF2 forms a source follower circuit and outputs a signal corresponding to the potential of the floating diffusion FD. When a pixel is selected, the select transistor S2 turns on and connects the floating diffusion FD2 to the output line Out2. These components are connected as shown in Figure 27. The GS readout circuit reads out the accumulated charge in the photodiode PD using global electronic shutter drive and outputs an image signal corresponding to the accumulated charge to the output line Out2.

[0104] The reset transistor Reset is provided in common to the RS readout circuit and the GS readout circuit, and resets the photodiode PD, the storage capacitor SG, and the floating diffusions FD1 and FD2.

[0105] Fig. 28 is a diagram showing the driving timing of the rolling electronic shutter and the global electronic shutter in the second embodiment. Fig. 28 shows control pulses for the transfer transistor TX1 of the RS readout circuit and the storage capacitor SG and transfer transistor TX2 of the GS readout circuit when reading out one frame. The pixel area 201 has n rows of pixels, and (1) to (n) in Fig. 28 represent the first to nth rows of pixels. Here, it is also assumed that the pixels in the i-th to j-th rows are set as a GS area driven by the global electronic shutter.

[0106] First, from time r1 to r2, the reset transistors Reset are turned on and the transfer transistors TX1 are turned on sequentially in the first to nth rows to reset the photodiodes PD, and charge accumulation in the rolling electronic shutter begins.

[0107] Then, at time g1, in the rows (row i to row j) set as the GS area, the transfer transistors TX1 are simultaneously turned on, the charge that had been accumulated in the photodiode PD up to that point is transferred to the floating diffusion FD1, and the photodiode PD is reset. As a result, charge accumulation in the rolling electronic shutter is temporarily suspended, the accumulated charge up to that point is held in the floating diffusion FD1, and charge accumulation in the global electronic shutter begins. Note that charge accumulation in the rolling electronic shutter continues in rows not set as the GS area (rows other than row i to row j).

[0108] Then, at time g2 after a predetermined accumulation time (GS accumulation time) has elapsed, the gates of the storage capacitors SG are simultaneously opened in the rows (row i to row j) set as the GS area, the accumulated charge in the photodiodes PD is transferred to the storage capacitors SG, and the photodiodes PD are reset. This ends the charge accumulation in the global electronic shutter, the accumulated charge up to that point is held in the storage capacitors SG, and charge accumulation in the rolling electronic shutter is resumed.

[0109] Then, at times g3 to g4, in the rows (row i to row j) set as the GS area, the transfer transistors TX2 are sequentially turned on, the accumulated charge held in the storage capacitor SG is transferred to the floating diffusion FD2, and an imaging signal (GS signal) corresponding to the accumulated charge is read out from the output line Out2.

[0110] Furthermore, at times r3 to r4, after a predetermined accumulation time (RS accumulation time) has elapsed since the start of accumulation of the rolling electronic shutter in each of the first to nth rows, the transfer transistor TX1 in each row is sequentially turned on, the accumulated charge in the photodiode PD is transferred to the floating diffusion FD1, and an imaging signal (RS signal) corresponding to the accumulated charge is read out from the output line Out1. Note that in the rows set as the GS area (row i to row j), the accumulated charge from time g2 onwards is added to the accumulated charge before time g1 that was transferred to and held in the floating diffusion FD1 at time g1, and the result is read out from the output line Out1 as an RS signal.

[0111] In the rows (row i to row j) set as the GS area, as described above, part of the charge accumulation time in the rolling electronic shutter is used as the charge accumulation time in the global electronic shutter, so the charge accumulation time in the rolling electronic shutter is shorter by the charge accumulation time in the global electronic shutter. Therefore, for the rows set as the GS area, an appropriate image signal can be obtained by adding the GS signal and the RS signal in the adder 313 of the signal processing unit 305 described above. That is, the adder 313 acquires an image signal using the GS signal and the RS signal for pixels in the GS area, and acquires an image signal using the RS signal for pixels outside the GS area.

[0112] 28 has described an example in which charge accumulation in the global electronic shutter is performed during charge accumulation in the rolling electronic shutter. However, the timing of charge accumulation in the global electronic shutter may be any timing between after the readout of the accumulated charge in the rolling electronic shutter of the previous frame and before the readout of the accumulated charge in the rolling electronic shutter of the current frame.

[0113] 28, in the rows (row i to row j) set as the GS area, the start of charge accumulation in the rolling electronic shutter may be after the end of charge accumulation in the global electronic shutter (time g2). In this case, since the charge accumulation in the rolling electronic shutter is not interrupted by the charge accumulation in the global electronic shutter, the adder 313 does not add the GS signal and the RS signal, and only the RS signal is used as an image signal.

[0114] 28, in the rows (row i to row j) set as the GS area, the timing at which charge accumulation in the rolling electronic shutter starts may be between the start (time g1) and end (time g2) of charge accumulation in the global electronic shutter. In this case, after charge accumulation in the global electronic shutter starts, the transfer transistor TX1 is turned on and the photodiode PD is reset at the start of charge accumulation in the rolling electronic shutter. Therefore, the charge accumulated from this reset timing until the end (time g2) of charge accumulation in the global electronic shutter is read out as the GS signal, reducing the accumulation time of the GS signal. Therefore, in this case, the GS signal is corrected in the image sensor 101 or the signal processing unit 305 based on the ratio of the reduced accumulation time to the predetermined accumulation time so that the GS signal has a predetermined accumulation time.

[0115] Also, in FIG. 28, an example has been described in which the global electronic shutter is performed once in reading out one frame, but it may be performed multiple times.

[0116] (Motion detection) The image processing unit 317 can perform moving object detection using the GS signal and RS signal obtained by reading out one frame. FIG. 29 is a diagram illustrating such moving object detection. FIGS. 29(A) to 29(C) show the movement of a moving object P, which is a subject, from time t0 to t2. From time t0 to t2, the moving object P moves from right to left. The GS area Ag in which the global electronic shutter is driven is set to include the moving object P. FIG. 29(D) shows an image (GS image) obtained by the global electronic shutter at time t1. As shown in FIG. 29(D), the moving object P is captured in the GS area Ag without distortion in the GS image. FIG. 29(E) shows an image (RS image) obtained by the rolling electronic shutter from time t0 to t2. Because the moving object P moves from time t0 to t2, the moving object P appears distorted in the RS image, as shown in FIG. 29(E).

[0117] In this way, if the subject is moving, it will appear undistorted in the GS image but distorted in the RS image, resulting in different images between the GS and RS images. On the other hand, if the subject is not moving (still), it will appear undistorted in both the GS and RS images, resulting in substantially the same image between the GS and RS images. Based on this, the image processing unit 317 performs feature point detection (such as edge detection) of the subject using the GS signal and the RS signal in the GS area, compares the results of the feature point detection between the GS signal and the RS signal in the GS area, and if there is a difference equal to or greater than a predetermined value, determines that the subject included in the GS area is a moving subject. Furthermore, the image processing unit 317 may detect the amount of distortion in the RS signal in the GS area and detect the moving speed of the moving subject based on the amount of distortion.

[0118] (GS signal and RS signal added together) As described above, the accumulation time of the RS signal in the GS area is shorter by the accumulation time of the global electronic shutter, so the adder 313 adds the RS signal and GS signal in the GS area. At this time, if there is no distortion in the RS signal, the adder 313 simply adds the RS signal and GS signal in the GS area. However, if there is distortion in the RS signal, simply adding the RS signal and GS signal in the GS area will result in an image that appears blurred because a distorted image and an image that does not have distortion are added. Therefore, if there is distortion in the RS signal, an image signal is generated using the following method instead of simply adding the RS signal and GS signal in the GS area.

[0119] (1) When RS signal distortion occurs within the GS area 30(A) and (B) are diagrams showing examples of a GS image and an RS image when distortion in the RS signal is within the GS area Ag. In FIGS. 30(A) and (B), a moving object P is contained within the GS area Ag, and the distortion of the RS image in FIG. 30(B) is contained within the GS area Ag. In this case, the image processing unit 317 uses only the GS signal in the GS area and synthesizes the GS signal with the RS signal outside the GS area to generate one frame of image signal. Note that, because the GS signal and the RS signal have different accumulation times, the image processing unit 317 applies gain or performs offset correction to the GS signal to make it correspond to the RS signal, and generates one frame of image signal.

[0120] (2) When RS signal distortion occurs outside the GS area 30(C) and (D) are diagrams showing examples of a GS image and an RS image when the distortion in the RS signal is outside the GS area Ag. In FIGS. 30(C) and (D), the moving object P extends beyond the GS area Ag, and the distortion in the RS image in FIG. 30(B) extends beyond the GS area Ag. In this case, the image processing unit 317 uses only the RS signal in the GS area Ag and generates one frame of image signal using only the RS signal. Note that because the RS signal in the GS area Ag has a different accumulation time than the RS signal outside the GS area, the image processing unit 317 applies gain or performs offset correction to the RS signal in the GS area Ag to correct it so that it corresponds to the RS signal outside the GS area, and generates one frame of image signal.

[0121] When recognizing a subject from the image signal obtained from the image sensor 101, the image processing unit 317 also determines the size of the subject and sets the size of the GS area based on the determination result so that the subject is included in the GS area. Therefore, normally, the distortion in the RS signal is within the GS area as described above in (1), but in the first frame, when the subject moves suddenly, or when the composition is changed, the distortion in the RS signal may be outside the GS area as described above in (2). In this case, in the next frame, the result of the determination of the subject size by the image processing unit 317 is fed back to the setting of the GS area, so that the distortion in the RS signal is within the GS area as described above in (1).

[0122] According to the above-described embodiment, the following effects can be obtained. (1) The image sensor 101 has pixels 220, each including a photodiode PD that converts light into an electric charge, and a readout unit 250 that reads out an image signal generated from the electric charge photoelectrically converted by the photodiode PD. The control unit 206 of the image sensor 101 controls the readout unit 250 to read out image signals from some of the pixels 220 using a first electronic shutter method and to read out image signals from other pixels 220 using a second electronic shutter method that is different from the first electronic shutter method. With this configuration, image signals using multiple electronic shutter methods can be obtained within one frame.

[0123] (2) The image sensor 101 includes a plurality of pixels 220 arranged two-dimensionally in the row and column directions. Each pixel 220 includes a photodiode PD that accumulates charge according to the amount of incident light, and a readout unit 250 that reads out an image signal according to the accumulated charge in the photodiode PD. The readout unit 250 is configured to support both the global electronic shutter method and the rolling electronic shutter method. When reading out one frame's worth of image signals, image signals are read out from all of the plurality of pixels 220 using the rolling electronic shutter method, and image signals are read out from some of the plurality of pixels 220 using the global electronic shutter method. With this configuration, it is possible to obtain image signals using both the rolling electronic shutter method and the global electronic shutter method within one frame, without switching between the rolling electronic shutter method and the global electronic shutter method between frames as in conventional technology. When reading out one frame, it is possible to obtain one frame's worth of image using the rolling electronic shutter method, and to obtain signals for AF and AE using the global electronic shutter method.

[0124] (3) In the image sensor 101, the readout section 250 of each pixel 220 has an RS readout circuit and a GS readout circuit connected to the photodiode PD, and in reading out one frame of image signals, the image signals are read out from all pixels by the RS readout circuit using the rolling electronic shutter method, and from some pixels by the GS readout circuit using the global electronic shutter method. This makes it possible to read out image signals from some pixels using the global electronic shutter method in parallel with reading out image signals from all pixels using the rolling electronic shutter method.

[0125] (4) In the camera body 100, the body control device 102 uses image signals read out from the image sensor 101 using the global electronic shutter method to perform at least one of focus adjustment processing, exposure calculation processing, white balance adjustment processing, subject recognition processing, moving object prediction processing, and subject tracking processing. This configuration makes it possible to perform the above-mentioned processing using image signals from areas with pixel accumulation simultaneity. Furthermore, based on the results of the above-mentioned processing, the body control device 102 determines the pixels in the image sensor 101 from which image signals are read out using the global electronic shutter method. This configuration makes it possible to feed back the results of the above-mentioned processing to the setting of the area from which images are read out using the global electronic shutter method.

[0126] (5) In the camera body 100, the body control device 102 acquires image signals from pixels read out by both the global electronic shutter method and the rolling electronic shutter method using the imaging signals read out by the global electronic shutter method and the imaging signals read out by the rolling electronic shutter method. For other pixels, it acquires image signals from the imaging signals read out by the rolling electronic shutter method. With this configuration, it is possible to appropriately acquire one frame's worth of image signals.

[0127] (6) In the camera body 100, the body control device 102 detects a moving object being captured by using the difference between the image signal read by the global electronic shutter method and the image signal read by the rolling electronic shutter method for pixels read by both the global electronic shutter method and the rolling electronic shutter method. This configuration makes it possible to perform moving object detection using only one frame, thereby reducing the time required for moving object detection compared to when performing moving object detection using multiple frames.

[0128] Although various embodiments and modifications have been described above, the present invention is not limited to these. Other embodiments that are conceivable within the scope of the technical idea of ​​the present invention are also included within the scope of the present invention. [Explanation of symbols]

[0129] 100... camera body, 101... image sensor, 102... body control device, 110... interchangeable lens, 201... pixel area, 202... vertical drive circuit, 210... vertical area setting circuit, 220... pixel, 250... readout section, 260... horizontal area setting circuit, FD, FD1, FD2... floating diffusion, PD... photodiode, RST-Tr, Reset... reset transistor, SC, SG... storage capacitor, TX-Tr, TX1, TX2... transfer transistor

Claims

[Claim 1] a plurality of pixels arranged in a row direction and a column direction in a pixel area, each pixel generating a signal based on photoelectrically converted charges; a drive circuit unit that controls the plurality of pixels so as to read out the signals from a plurality of first pixels that are arranged side by side in the row direction and the column direction in a first area of ​​the pixel area by a global electronic shutter system, and to read out the signals from a plurality of second pixels that are arranged side by side in the row direction and the column direction in a second area of ​​the pixel area by a rolling electronic shutter system; An imaging element comprising:

Citation Information

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