Substrate processing method using a boron compound

Abstract

A method for removing dielectric by-products generated by etching a dielectric film formed on a substrate is disclosed. The method for removing dielectric by-products includes providing a gaseous boron compound in a reaction chamber to remove the dielectric by-products, and purging the inside of the reaction chamber. The boron compound is B n X 3n (X is hydrogen, alkyl, amino or halogen, and n is a natural number of 1 or more).

Description

[Technical field]

[0001] The present invention relates to a substrate processing method for removing dielectric by-products produced during dielectric patterning.

[0002] More particularly, the present invention relates to a substrate processing method for removing by-products produced after etching a dielectric material with a boron compound such as diborane (B2H6). [Background technology]

[0003] Dielectrics such as hafnium oxide, aluminum oxide, titanium oxide, zirconium oxide, etc., are mainly used as various insulating film materials such as gate insulating films and capacitor insulating films due to their characteristic of having a high dielectric constant.

[0004] When the dielectric film is patterned by dry etching or wet etching to expose elements underneath the dielectric film, the elements underneath the dielectric film are not exposed and dielectric by-products remain. For example, when hafnium oxide 10 is deposited to a thickness of about 3.39 nm as shown in FIG. 1 and then etched by dry etching for patterning, the hafnium oxide is not completely removed and hafnium oxide by-products 10a to a thickness of about 15.73 nm remain as shown in FIG. 2.

[0005] The dielectric by-products may be a chemical bond between a part of the dielectric and a part of the etching agent. Among these dielectric by-products, non-sublimable compounds may not be easily removed. These dielectric by-products need to be removed because they may cause deterioration of the electrical and / or mechanical properties of the element, resulting in deterioration of element reliability.

[0006] Therefore, it has been considered to perform an additional dry etching to remove the dielectric by-products, but the efficiency of removing the dielectric by-products is not high even with the additional etching. Summary of the Invention [Problem to be solved by the invention]

[0007] The problem to be solved by the present invention is to provide a substrate processing method capable of efficiently removing dielectric by-products generated when patterning a dielectric film to expose elements underneath the dielectric film. [Means for solving the problem]

[0008] In order to solve the above problems, a substrate processing method according to an embodiment of the present invention is a method for removing dielectric by-products generated by etching a dielectric film formed on a substrate, the method comprising the steps of: providing a gaseous boron compound in a reaction chamber to remove the dielectric by-products; and purging the inside of the reaction chamber, the boron compound being B n X 3n (X is hydrogen, alkyl, amino or halogen, and n is a natural number of 1 or more).

[0009] The boron compound may include one or more of BH3, B2H6, B(CH3)3, B(N(CH3)2)3, BF3, and BCl3.

[0010] The dielectric film may include one or more of Al2O3, HfO2, TiO2, ZrO2, Y2O3, La2O3, UO2, Lu2O3, Ta2O5, Nb2O5, ZnO, MgO, CaO, BeO, V2O5, FeO, FeO2, CrO, Cr2O3, CrO2, MnO, Mn2O3, RuO, CoO, and WO3.

[0011] The boron compound may be provided in the reaction chamber in a plasma state using a remote plasma system.

[0012] In the step of removing the dielectric by-products, an inert gas can be provided in the reaction chamber along with the boron compound.

[0013] The flow ratio of the boron compound to the inert gas may be 1:1 to 1:5.

[0014] The step of removing the dielectric by-products may be performed at a substrate temperature of 200° C. or more and a pressure of 0.3 to 3 Torr.

[0015] Etching the dielectric film and removing the dielectric by-products can occur in the same chamber.

[0016] In order to solve the above problems, a substrate processing method according to an embodiment of the present invention is a substrate processing method for removing dielectric by-products generated by etching a dielectric film formed on a substrate, the method including the steps of: applying RF power to a reaction chamber; providing a gaseous boron compound in the reaction chamber to plasma the boron compound and remove the dielectric by-products; and purging the inside of the reaction chamber, the boron compound being B n X 3n (X is hydrogen, alkyl, amino or halogen, and n is a natural number of 1 or more).

[0017] The boron compound may include one or more of BH3, B2H6, B(CH3)3, B(N(CH3)2)3, BF3, and BCl3.

[0018] The dielectric film may include one or more of Al2O3, HfO2, TiO2, ZrO2, Y2O3, La2O3, UO2, Lu2O3, Ta2O5, Nb2O5, ZnO, MgO, CaO, BeO, V2O5, FeO, FeO2, CrO, Cr2O3, CrO2, MnO, Mn2O3, RuO, CoO, and WO3.

[0019] In the step of removing the dielectric by-products, an inert gas can be provided in the reaction chamber along with the boron compound.

[0020] The flow ratio of the boron compound to the inert gas may be 1:1 to 1:5.

[0021] The step of removing the dielectric by-products may be performed at a substrate temperature of 200° C. or more and a pressure of 0.3 to 3 Torr.

[0022] The RF power can be applied under the condition of 200 to 1000 W.

[0023] Etching the dielectric film and removing the dielectric by-products can occur in the same chamber. Effect of the Invention

[0024] According to the substrate processing method of the present invention, the dielectric by-products generated by etching the dielectric film are effectively removed by contacting the substrate with boron compounds such as BH3, B2H6, and BF3, thereby preventing the deterioration of the electrical characteristics of the manufactured semiconductor device and improving the reliability of the device.

[0025] In particular, when a boron compound plasma was applied using RF power, the dielectric by-products could be removed with higher efficiency.

[0026] The effects of the present invention are not limited to those mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description of the preferred embodiments of the invention. [Brief description of the drawings]

[0027] [Figure 1] FIG. 1 is a photograph showing the deposition of hafnium oxide. [Diagram 2] FIG. 13 is a photograph showing by-products remaining after etching hafnium oxide. [Diagram 3] 1A to 1C are diagrams illustrating a substrate processing method according to an embodiment of the present invention. [Figure 4]5A to 5C are diagrams illustrating a substrate processing method according to another embodiment of the present invention. [Diagram 5] 5 is a diagram illustrating an example of a substrate processing apparatus used in the substrate processing method according to FIG. 4. [Figure 6] FIG. 1(a) is a TEM photograph of a sample obtained by etching hafnium oxide, (b) is a TEM photograph of a sample obtained by removing the hafnium oxide by-products using diborane according to Example 1, and (c) is a TEM photograph of a sample obtained by removing the hafnium oxide by-products using diborane according to Example 2. [Figure 7] FIG. 2 shows the results of (a) a first test and (b) a second test conducted under the process conditions of Example 1. [Figure 8] FIG. 13 is a diagram showing the results of (a) a first test and (b) a second test conducted under the process conditions of Example 2. [Figure 9] 1A shows the results of tests performed under the process conditions of Example 1, and FIG. 1B shows the results of tests performed under the process conditions of Example 3. [Figure 10] 13A shows the results of tests performed under the process conditions of Example 4, and FIG. 13B shows the results of tests performed under the process conditions of Example 5. [Figure 11] FIG. 13A is a TEM photograph of a sample in which hafnium oxide was etched; FIG. 13B is a TEM photograph of a sample in which the hafnium oxide by-products were removed using diborane according to Example 6; FIG. 13C is a TEM photograph of a sample in which the hafnium oxide by-products were removed using diborane according to Example 7; FIG. 13D is a TEM photograph of a sample in which the hafnium oxide by-products were removed using diborane according to Example 8; and FIG. 13E is a TEM photograph of a sample in which the hafnium oxide by-products were removed using diborane according to Example 9. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] The advantages and features of the present invention, as well as the methods for achieving them, will become clear from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and may be embodied in various different forms. However, the embodiments are provided to complete the disclosure of the present invention and to fully inform those skilled in the art of the present invention of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0029] References to an element or layer being "on" or "under" another element or layer include not only directly on or directly under the other element or layer, but also when there are other layers or elements between. Also, when an element is described as being "coupled," "bonded," or "connected" to another element, it should be understood that the elements may be directly coupled or connected to each other, but that there may be other elements "intervening" between each element, or each element may be "coupled," "bonded," or "connected" through other elements.

[0030] The terms used in the present specification are for the purpose of describing the embodiments and are not intended to limit the present invention. In the present specification, the singular form includes the plural form unless otherwise stated in the text. When used in the specification, the words "comprise" and / or "include" do not exclude the presence or addition of one or more other elements, elements, steps and / or operations to a referenced element, element, step and / or operation.

[0031] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a substrate processing method according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0032] FIG. 3 is a diagram illustrating a substrate processing method according to an embodiment of the present invention.

[0033] Referring to FIG. 3, the substrate processing method according to the embodiment of the present invention includes a step of removing dielectric by-products by using a boron compound (S110) and a purge step (S120).

[0034] The object to be etched in this embodiment is a dielectric by-product generated by etching a dielectric film formed on a substrate using the dielectric film as an etching agent. The dielectric film may contain one or more of Al2O3, HfO2, TiO2, ZrO2, Y2O3, La2O3, UO2, Lu2O3, Ta2O5, Nb2O5, ZnO, MgO, CaO, BeO, V2O5, FeO, FeO2, CrO, Cr2O3, CrO2, MnO, Mn2O3, RuO, CoO, and WO3. The etching of the dielectric film can be performed, for example, by a dry etching method using HF and NF3 as reactive gases and Ar as a carrier gas. In this case, the etching of the dielectric film and the removal reaction of the dielectric by-products can be performed in the same reaction chamber. In another example, the etching of the dielectric film can be performed by a wet etching method.

[0035] The dielectric by-products may be the product of a chemical reaction between some components of the dielectric film and some components of the etchant.

[0036] In the step of removing the dielectric by-products with a boron compound (S110), a gaseous boron compound is provided in the reaction chamber to remove the dielectric by-products, which may be performed for about 5 to 15 minutes.

[0037] In this case, the boron compound used in the present invention is B n X 3n (X is hydrogen, alkyl, amino or halogen, and n is a natural number of 1 or more). Here, n can be 1 or 2, but is not limited thereto.

[0038] The boron compound used in the present invention is a compound in which one boron atom is bonded to three hydrogen atoms, and as described above, the boron compound is represented by the formula B n X 3nA boron compound is a compound represented by the chemical formula: A typical boron compound is diborane represented by B2H6, and various other boron compounds can be used in the substrate processing method according to the present invention, as exemplified below. More specifically, boron compounds that can be easily considered in the present invention include BH3, B2H6, B(CH3)3, B(N(CH3)2)3, BF3, BCl3, etc., and these can be used alone or in combination of two or more kinds.

[0039] In this embodiment, a gaseous boron compound is used to remove the dielectric by-products. The boron compound used in this embodiment is in a gaseous or liquid state at room temperature. If the boron compound is in a gaseous state at room temperature, it can be supplied directly into the reaction chamber. On the other hand, if the boron compound is in a liquid state at room temperature, it can be supplied into the reaction chamber after being vaporized by a vaporizer.

[0040] In the step of removing the dielectric by-products (S110), an inert gas such as helium or argon can be provided in the reaction chamber together with the boron compound, which can act as a carrier gas for the boron compound.

[0041] Uniquely, when the boron compound and the inert gas are provided together in the reaction chamber, the removal efficiency of the dielectric by-products is higher than when only the boron compound is provided in the reaction chamber without the inert gas, i.e., the inert gas can contribute to improving the reaction efficiency between the boron compound and the dielectric by-products.

[0042] The flow rate ratio of the boron compound to the inert gas may be 1:1 to 1:5. For example, if the flow rate of the boron compound is 100 sccm, the flow rate of the inert gas may be 100 to 500 sccm. The range of the flow rate ratio of the boron compound to the inert gas may show the highest effect of dielectric by-products.

[0043] The reaction for removing the dielectric by-products can be carried out at a substrate temperature of about 200° C. or higher, for example, 200° C. to 800° C. The suitable substrate temperature may vary depending on the types of the dielectric and the boron compound. For example, when the dielectric is hafnium oxide and the boron compound is diborane, the reaction for removing the dielectric by-products can be carried out at a substrate temperature of about 500° C. If the substrate temperature is too low, the reaction for removing the dielectric by-products may not proceed smoothly. From the viewpoint of reaction efficiency, it is preferable to carry out the reaction for removing the dielectric by-products at a high temperature of about 200° C. or higher.

[0044] The reaction for removing the dielectric by-products can be carried out at a pressure of 0.3 to 3 Torr, more preferably 0.1 to 1 Torr. When the internal pressure of the reaction chamber is within the above range, the reaction for removing the dielectric by-products can be carried out smoothly.

[0045] Meanwhile, the boron compound may be provided in the reaction chamber in a plasma state in a remote plasma system outside the reaction chamber, in which case the efficiency of the removal reaction of the dielectric by-products may be improved or the substrate temperature required for the removal reaction of the dielectric by-products may be reduced.

[0046] On the other hand, the dielectric by-products may leave the dielectric materials intact, but in the case of boron compounds, they can react with these dielectric materials. For example, if the dielectric material is hafnium oxide and the boron compound is diborane, the hafnium oxide can be removed by the following reaction: The resulting HF(BH4)4 can be sublimated and the H2O can be vaporized.

[0047] 2B2H6+HfO2+4H2→HF(BH4)4+2H2O

[0048] In the purge step (S120), the inside of the reaction chamber is purged with a purge gas, which may be an inert gas such as argon or nitrogen gas.

[0049] After the purge step, an optional step such as annealing can be carried out.

[0050] According to this embodiment, the dielectric by-products generated by etching the dielectric film are brought into contact with a boron compound such as BH3, B2H6, or BF3, which allows the dielectric by-products to be effectively removed by chemical reaction between the dielectric by-products and the boron compound.

[0051] FIG. 4 is a diagram illustrating a substrate processing method according to another embodiment of the present invention.

[0052] Referring to FIG. 4, the substrate processing method according to the present embodiment includes an RF power application step (S210), a removal step (S220) of dielectric by-products caused by plasmatized boron compound, and a purging step (S230).

[0053] The substrate to be processed in this embodiment is a substrate on which a dielectric film has been formed and on which a dielectric by-product has been generated by etching the dielectric film, similar to the embodiment shown in FIG. 3.

[0054] The dielectric film may include one or more of Al2O3, HfO2, TiO2, ZrO2, Y2O3, La2O3, UO2, Lu2O3, Ta2O5, Nb2O5, ZnO, MgO, CaO, BeO, V2O5, FeO, FeO2, CrO, Cr2O3, CrO2, MnO, Mn2O3, RuO, CoO, and WO3.

[0055] On the other hand, in this embodiment, RF power is applied to the reaction chamber.

[0056] FIG. 5 is a schematic diagram showing an example of a substrate processing apparatus used in the substrate processing method according to FIG.

[0057] Referring to FIG. 5, the illustrated substrate processing apparatus includes a reaction chamber 2, a showerhead 3, a susceptor 4, an RF power source 5, and a first electrode 6.

[0058] The shower head 3 is provided at the upper part of the inside of the reaction chamber 2 and sprays gases introduced through a plurality of gas supply lines (S) connected to an external gas supply device (not shown) into the inside of the chamber.

[0059] The gas supply line (S) in this embodiment may include a boron compound supply line and an inert gas supply line. The boron compound and the inert gas can be supplied together into the reaction chamber. In another example, the boron compound and the inert gas can be supplied separately into the reaction chamber.

[0060] The first electrode 6 is electrically connected to the RF power source 5 and is used as an electrode for plasma discharge in the chamber 2. In the example shown in FIG. 5, the showerhead 3 is electrically connected 3a to the first electrode 6, so that the first electrode 6 and the showerhead 3 together function as a single electrode. Thus, RF power generated by the RF power source 5 is applied to the inside of the reaction chamber 2 through the first electrode 6 and the showerhead 3. The RF filter 7 serves to remove signal interference generated around the reaction chamber 2.

[0061] A susceptor 4 on which a substrate (W) is loaded (supported) is provided at the bottom inside the reaction chamber 2. The susceptor 4 may be provided with a temperature control means for heating / cooling the substrate. The susceptor 4 may also function as a ground electrode as in the example shown in FIG. 5. To further improve the grounding performance, a separate ground line 8 may be provided. Although not shown, the susceptor 4 itself may be connected to a high frequency power source or a DC power source to be configured as a second electrode (bias electrode).

[0062] 4, in the substrate processing method according to this embodiment, first, RF power is applied to the reaction chamber (S210).

[0063] The RF power may be applied under conditions of an RF frequency such as 13.56 MHz. The RF power may be applied under conditions of 200 to 1000 W, more preferably 400 to 600 W. When the RF power is within the above range, the reaction of removing the dielectric by-products can be stably carried out. However, when the RF power deviates from the above range, there is a risk of deformation of the film quality and / or damage to the film.

[0064] Next, in the step of removing the dielectric by-products (S220), a gaseous boron compound is provided in the reaction chamber, the boron compound is turned into plasma, and the dielectric by-products are removed, which may take about 5 to 15 minutes.

[0065] The boron compound used in this embodiment is B n X 3n (X is hydrogen, alkyl, amino or halogen, and n is a natural number of 1 or more). Here, n can be 1 or 2, but is not limited to this. For example, the boron compound used in this embodiment may include one or more of BH3, B2H6, B(CH3)3, B(N(CH3)2)3, BF3, and BCl3.

[0066] 3, in the step of removing the dielectric by-products (S220), an inert gas such as argon can be provided together with the boron compound in the reaction chamber, and the flow ratio of the boron compound to the inert gas can be 1:1 to 1:5.

[0067] The boron compound and / or the inert gas can be provided inside the reaction chamber before application of RF power, simultaneously with application of RF power, or after application of RF power.

[0068] Also, similar to the embodiment shown in FIG. 3, the step of removing the dielectric by-products can be performed at a substrate temperature of 200° C. or more and a pressure of 0.3 to 3 Torr.

[0069] In the purging step (S230), the inside of the reaction chamber is purged with an inert gas, nitrogen gas, or the like.

[0070] After the purging step (S230), a step such as annealing may be carried out as necessary.

[0071] According to the substrate processing method of this embodiment, a boron compound such as BH3, B2H6, or BF3 is turned into plasma and reacted with the dielectric by-products, thereby further increasing the efficiency of removing the dielectric by-products.

[0072] Working Example The present invention will be described in more detail below with reference to preferred embodiments thereof, which are presented as preferred examples of the present invention and are not to be construed as limiting the present invention in any sense.

[0073] The contents not described here will not be explained since they can be easily inferred by those skilled in the art.

[0074] FIG. 6 shows (a) a TEM photograph of a sample after etching hafnium oxide, (b) a TEM photograph of a sample after the hafnium oxide by-products have been removed using diborane according to Example 1, and (c) a TEM photograph of a sample after the hafnium oxide by-products have been removed using diborane according to Example 2.

[0075] The substrates used in Examples 1 and 2 were both coated with hafnium oxide, which was then patterned using a dry etching method with HF and NF3 as reactive gases and Ar as a carrier gas, resulting in a 4.83 nm by-product as shown in FIG. 6(a).

[0076] In the case of Example 1, the reaction for removing the by-product of hafnium oxide was carried out for 10 minutes under the conditions of a substrate temperature of 500° C., a chamber pressure of 350 mTorr, a diborane flow rate of 40 sccm, and an argon flow rate of 80 sccm. On the other hand, in the case of Example 1, no RF power was applied.

[0077] In the case of Example 2, the reaction to remove the by-product of hafnium oxide was carried out for 10 minutes under the conditions of a substrate temperature of 500° C., a chamber pressure of 700 mTorr, a diborane flow rate of 80 sccm, and an argon flow rate of 160 sccm. Meanwhile, in the case of Example 2, an RF power of 13.56 MHz and 500 W was applied.

[0078] 6(b) and (c), it can be seen that the hafnium oxide by-products were almost completely removed in the cases of Example 1 and Example 2. In addition, as a result of visually inspecting the substrates of Example 1 and Example 2, it was confirmed that when the process of removing the hafnium oxide by-products was performed using diborane, there was no discoloration on the surface of the substrate wafer.

[0079] These results in Figure 6 show that boron compounds such as diborane are effective in removing the hafnium oxide by-product.

[0080] Fig. 7 is a diagram showing the results of (a) a first test and (b) a second test performed under the process conditions of Example 1. Fig. 8 is a diagram showing the results of (a) a first test and (b) a second test performed under the process conditions of Example 2.

[0081] 7 and 8, it can be seen that the effect of removing hafnium oxide by-products is relatively higher in the case of Fig. 8 than in the case of Fig. 7. This shows that a more reliable effect of removing hafnium oxide by-products can be obtained when performing the process of removing hafnium oxide by-products using diborane under RF power.

[0082] FIG. 9(a) shows the results of tests performed under the process conditions of Example 1 and Example 3.

[0083] FIG. 9(a) shows the second test performed under the process conditions of Example 1, and is similar to FIG. 7(b).

[0084] In the case of Example 3, the reaction for removing the by-product of hafnium oxide was carried out under the same conditions as in Example 1, except that an RF power of 300 W was applied.

[0085] 9, even under the same process pressure and gas flow conditions, the effect of removing hafnium oxide by-products may vary depending on the RF power, and in particular, a higher by-product removal effect can be obtained when the process is performed under RF power. However, when the process is performed under 300 W RF power, the by-products remain partially compared to Example 2 in which the process is performed under 500 W RF power.

[0086] FIG. 10 shows the results of tests carried out under (a) the process conditions of Example 4 and (b) the process conditions of Example 5.

[0087] In the case of Example 4, the reaction for removing the by-product of hafnium oxide was carried out under the same conditions as in Example 2, except that no RF power was applied.

[0088] In the case of Example 5, the reaction for removing the by-product of hafnium oxide was carried out under the same conditions as in Example 2, except that an RF power of 1000 W was applied.

[0089] 10, it can be seen that the effect of removing hafnium oxide by-products can vary depending on the RF power even under the same process pressure and gas flow conditions. However, when the process is performed under RF powers of 0 W and 1000 W, it can be seen that the by-products remain partially compared to Example 2, in which the process is performed under RF power of 500 W.

[0090] FIG. 11 shows the results of a test performed by changing the flow rates of diborane and argon gases.

[0091] Specifically, FIG. 11 shows (a) a TEM photograph of a sample in which hafnium oxide was etched, (b) a TEM photograph of a sample in which the hafnium oxide by-products were removed using diborane according to Example 6, (c) a TEM photograph of a sample in which the hafnium oxide by-products were removed using diborane according to Example 7, (d) a TEM photograph of a sample in which the hafnium oxide by-products were removed using diborane according to Example 8, and (e) a TEM photograph of a sample in which the hafnium oxide by-products were removed using diborane according to Example 9.

[0092] The substrates used in Examples 6 to 9 were all coated with hafnium oxide, which was then patterned using a dry etching method with HF and NF3 as reactive gases and Ar as carrier gas, resulting in a 12.54 nm by-product as shown in FIG. 11(a).

[0093] In the case of Example 6, the reaction to remove the by-product of hafnium oxide was carried out for 10 minutes under the conditions of a substrate temperature of 500° C., a chamber pressure of 1 Torr, a diborane flow rate of 500 sccm, and an argon flow rate of 80 sccm. Meanwhile, in the case of Example 6, no RF power was applied.

[0094] In Example 7, the reaction for removing the by-product of hafnium oxide was carried out under the same conditions as in Example 6, except that the flow rate of diborane was 1000 sccm.

[0095] In Example 8, the removal reaction of the by-product of hafnium oxide was carried out under the same conditions as in Example 6, except that the argon flow rate was 0 sccm, that is, only diborane was provided in the reaction chamber without argon gas.

[0096] In the case of Example 9, the reaction for removing the by-product of hafnium oxide was carried out under the same conditions as in Example 6, except that the diborane flow rate was 1000 sccm and the argon flow rate was 0 sccm.

[0097] 11(b) to (e), it can be seen that when the amount of diborane gas is increased without applying RF power (i.e., 0 W condition) or when only diborane gas is used without argon gas, some by-products remain. Considering this, it can be said that using an inert gas such as argon together with diborane and applying RF power is the most efficient method for removing dielectric by-products.

[0098] In addition, tests in which the dielectric on the substrate was changed to Al2O3, TiO2, ZrO2, Y2O3, La2O3, UO2, Lu2O3, Ta2O5, Nb2O5, ZnO, MgO, CaO, BeO, V2O5, FeO, FeO2, CrO, Cr2O3, CrO2, MnO, Mn2O3, RuO, CoO, or WO3, and the boron compound was BH3, B(CH3)3, B(N(CH3)2)3, BF3, or BCl3, showed results similar to those shown in Figures 6 to 11.

[0099] Although the present invention has been described above with reference to the preferred embodiment, various modifications and variations can be made by those skilled in the art. These modifications and variations are within the scope of the present invention. Therefore, the scope of the present invention should be determined by the claims set forth below.

Claims

1. 1. A substrate processing method for removing a dielectric by-product generated by etching a dielectric film formed on a substrate, the method comprising the steps of: providing a gaseous boron compound in a reaction chamber to remove said dielectric by-products; purging the interior of the reaction chamber; Including, The boron compound is B ｎ X ３ｎ (X is hydrogen, alkyl, amino or halogen, and n is a natural number of 1 or more), A method for processing a substrate.

2. The boron compound is BH ３ , B ２ H ６ , B(CH ３ ) ３ , B(N(CH ３ ) ２ ) ３ , B.F. ３ , and BCl ３ Including one or more of the following: The method of claim 1 .

3. The dielectric film is made of Al ２ O ３ , HfO ２ , TiO ２ , ZrO ２ , Y ２ O ３ , La ２ O ３ , U.O. ２ , Lu ２ O ３ , Ta ２ O ５ , Nb ２ O ５ , ZnO, MgO, CaO, BeO, V ２ O ５ , FeO, FeO ２ , CrO, Cr ２ O ３ , CrO ２ , MnO, Mn ２ O ３ , RuO, CoO, and WO ３ Including one or more of the following: The method of claim 1 .

4. The boron compound is provided in the reaction chamber in a plasma state using a remote plasma system. The method of claim 1 .

5. In the step of removing the dielectric by-products, an inert gas is provided in the reaction chamber. The method of claim 1 .

6. The flow ratio of the boron compound to the inert gas is 1:1 to 1:5; The substrate processing method according to claim 5 .

7. The step of removing the dielectric by-products is performed at a substrate temperature of 200° C. or more and a pressure of 0.3 to 3 Torr. The method of claim 1 .

8. The etching of the dielectric film and the removal of the dielectric by-products are performed in the same chamber. The method of claim 1 .

9. 1. A substrate processing method for removing a dielectric by-product generated by etching a dielectric film formed on a substrate, the method comprising the steps of: applying RF power to the reaction chamber; providing a gaseous boron compound in the reaction chamber, forming a plasma of the boron compound, and removing the dielectric by-products; purging the interior of the reaction chamber; Including, The boron compound is B ｎ X ３ｎ (X is hydrogen, alkyl, amino or halogen, and n is a natural number of 1 or more), A method for processing a substrate.

10. The boron compound is BH ３ , B ２ H ６ , B(CH ３ ) ３ , B(N(CH ３ ) ２ ) ３ , B.F. ３ , and BCl ３ Including one or more of the following: The substrate processing method according to claim 9 .

11. The dielectric film is made of Al ２ O ３ , HfO ２ , TiO ２ , ZrO ２ , Y ２ O ３ , La ２ O ３ , U.O. ２ , Lu ２ O ３ , Ta ２ O ５ , Nb ２ O ５ , ZnO, MgO, CaO, BeO, V ２ O ５ , FeO, FeO ２ , CrO, Cr ２ O ３ , CrO ２ , MnO, Mn ２ O ３ , RuO, CoO, and WO ３ Including one or more of the following: The substrate processing method according to claim 9 .

12. an inert gas is used with the boron compound in the step of removing the dielectric by-products; The substrate processing method according to claim 9 .

13. The flow ratio of the boron compound to the inert gas is 1:1 to 1:5; The method of claim 12.

14. The step of removing the dielectric by-products is performed at a substrate temperature of 200° C. or more and a pressure of 0.3 to 3 Torr. The substrate processing method according to claim 9 .

15. The RF power is applied under the condition of 200 to 1000 W. The substrate processing method according to claim 9 .

16. The etching of the dielectric film and the removal of the dielectric by-products are performed in the same chamber. The substrate processing method according to claim 9 .

Images