Optoelectronic component and method for manufacturing the same

Abstract

Optoelectronic components and methods for producing optoelectronic components. In at least one embodiment, the optoelectronic component (100) comprises a plurality of active regions (1, 2, 3) for producing electromagnetic radiation, the active regions being arranged laterally next to each other and spaced apart from each other in the lateral direction. The plurality of active regions comprises at least one active region of a first type (1) and at least one active region of a second type (2), the at least one active region of the first type (1) and the at least one active region of the second type (2) being based on the same semiconductor material system and having different bandgaps for producing different electromagnetic radiation. The optoelectronic component may be a μLED.

Description

[Technical field]

[0001] The present disclosure relates to optoelectronic components and methods of manufacturing optoelectronic components. [Background technology]

[0002] One object to be achieved is to provide an improved optoelectronic component, for example an optoelectronic component having a compact design and / or reliable operation. A further object to be achieved is to provide an improved method for producing an optoelectronic component, for example a particularly simple and efficient method. Summary of the Invention [Problem to be solved by the invention]

[0003] First, the optoelectronic components are identified. [Means for solving the problem]

[0004] According to at least one embodiment, the optoelectronic component comprises a plurality of active regions (also called active layers). Each active region is configured to produce electromagnetic radiation. The active regions may be, for example, continuous regions without interruption.

[0005] Each active region may have at least one p / n junction and / or at least one quantum well structure, for example in the form of a single quantum well or in the form of multiple quantum wells. The active regions are configured to produce electromagnetic radiation by recombination of electrons and holes.

[0006] According to at least one embodiment, the active regions are laterally arranged next to each other and spaced apart from each other in the lateral direction. In particular, the active regions are spaced apart from each other in pairs. The area between every two active regions is, for example, not provided for producing electromagnetic radiation. For example, during normal operation of the optoelectronic component, no electromagnetic radiation is produced in the area between the active regions.

[0007] In this specification, a lateral direction refers to a direction along a main extension plane of the optoelectronic component. The active regions may each extend parallel to the main extension plane of the optoelectronic component. That is, the active regions may extend in a lateral direction. For example, the length and width of each active region are both measured in the lateral direction and are greater than the respective thicknesses measured perpendicular to the main extension plane.

[0008] According to at least one embodiment, the plurality of active regions comprises at least one active region of a first type and at least one active region of a second type.

[0009] According to at least one embodiment, the first type of active region and the second type of active region are based on the same semiconductor material system, which means in particular that the components of the crystal lattice of both types of active region are identical, although the composition, i.e. the concentrations of the different components, may be different.

[0010] For example, the semiconductor material system is a III-V compound semiconductor material system. n In 1-n-m Ga m Nitride compound semiconductor materials such as N, Al n In 1-n-m Ga m Phosphide compound semiconductor materials such as P, or Al n In 1-n-m Ga m As, Al n In 1-n-m Gam The active region may comprise additional components in addition to the dopants. However, for simplicity, only the essential components of the crystal lattice are shown, namely Al, As, Ga, In, N, or P, although these may be partially replaced and / or supplemented by small amounts of additional materials. Preferably, the active region is based on AlInGaN.

[0011] According to at least one embodiment, the first type active region and the second type active region are based on the same semiconductor material system but have different bandgaps for producing different electromagnetic radiation, i.e. electromagnetic radiation of different wavelength spectrum.

[0012] The band gap of the active region can be tailored by the composition of the semiconductor material, for example the concentrations of components of the semiconductor material may be different in the first type of active region and the second type of active region.

[0013] The band gap of the first type of active region may differ from the band gap of the second type of active region by at least 0.1 eV, or at least 0.2 eV. For example, the electromagnetic radiation emitted by the first type of active region and the second type of active region are each visible light. The color of the light produced by the first type of active region may differ from the color of the light produced by the second type of active region. For example, the first type of active region produces blue light and the second type of active region produces green light or red light.

[0014] The plurality of active regions may further comprise at least one third type active region in addition to the first type active region and the second type active region. The third type active region may be based on the same semiconductor material system as the first type active region and the second type active region. The third type active region may have a different band gap than the first type active region and the second type active region to produce a different emission than the first type active region and the second type active region. For example, the third type active region also produces visible light, but produces a different color of visible light than the first type active region and the second type active region.

[0015] As an example, a first type of active region may produce UV radiation and / or blue light, a second type of active region may produce yellow and / or green light, and a third type of active region may produce orange and / or red light and / or IR radiation.

[0016] In the following, mainly the features of the first type active region and the second type active region are disclosed. However, corresponding features are also disclosed for the third type active region. For example, the disclosed differences between the second type active region and the first type active region may also be valid between the third type active region and the second type active region and / or the first type active region.

[0017] The plurality of active regions may include some first type active regions and / or some second type active regions and / or some third type active regions. Any feature disclosed for one first type active region is also disclosed for all other first type active regions, and similarly for the corresponding second type active regions and third type active regions of the first type.

[0018] Additionally, there may be further active regions, such as one or more fourth type active regions, and the features disclosed with respect to the first, second and third type active regions apply to the further active regions corresponding to the first, second and third types, and the band gap of the further active regions may again differ from the other types of active regions.

[0019] In at least one embodiment, the optoelectronic component comprises a plurality of active regions for producing electromagnetic radiation, the active regions being arranged laterally next to each other and spaced apart from each other in the laterally direction, the plurality of active regions comprising at least one active region of a first type and at least one active region of a second type, the at least one active region of the first type and the at least one active region of the second type being based on the same semiconductor material system and having different bandgaps for producing different electromagnetic radiation.

[0020] μLEDs are one approach for small displays, e.g. AR / VR devices. μLEDs require small pixels with different emission wavelengths, such as red, green, and blue. In solid-state LEDs and μLEDs, different material systems are usually used for different color regions. Blue to green light is mainly covered with AlInGaN, and green to red light with AlGaAsP or InAlGaP.

[0021] The inventors of the present invention had the idea to manufacture active regions producing different colors from the same semiconductor material system, for example AlInGaN. This is advantageous because the operating conditions (for example operating voltage, temperature dependence) of the different active regions are comparable, which allows miniaturization of the entire optoelectronic component and the use of uniform manufacturing processes. Furthermore, the possibility of transfer to 12 inch Si substrates is possible. In this case, the transfer of a single die can be omitted.

[0022] According to at least one embodiment, the first type active region and the second type active region are respectively assigned to the respective semiconductor structure by being grown on the upper side of the semiconductor structure. The semiconductor structures may each be a protrusion protruding from a substrate, such as a growth substrate, in a direction opposite the substrate. The upper side of the semiconductor structure may be the side opposite the substrate. The upper side may be a plateau of the semiconductor structure. The semiconductor structures may each be doped, for example n-doped.

[0023] According to at least one embodiment, the shape of the semiconductor structure of the first type is different from the shape of the semiconductor structure of the second type. In this specification, a semiconductor structure of the first type is understood to be a semiconductor structure that is assigned to an active region of the first type. Thus, an active region of the second type is assigned to a semiconductor structure of the second type.

[0024] The active region may completely cover the top side of the assigned semiconductor structure. The different types of semiconductor structures may be based on the same semiconductor material system. The composition of the semiconductor material of the different types of semiconductor structures may be the same. For example, the different types of semiconductor structures are made of GaN.

[0025] The first type of semiconductor structure and the second type of semiconductor structure having different shapes means that the first type of semiconductor structure and the second type of semiconductor structure are formed in a predetermined manner with different shapes. For example, the first type of semiconductor structure may have a different height and / or width than the second type of semiconductor structure. The width is measured, for example, on the upper side, in a lateral direction, and the height is measured perpendicular to the main extension plane of the optoelectronic component. For example, the first type of active region is arranged at a different height than the second type of active region.

[0026] The shape of a semiconductor structure can have a large effect on the growth / fabrication of the active region thereon, and in particular on the exact composition of the active region and thus the resulting bandgap. As will be shown below, there are several degrees of freedom in the shape of the semiconductor structure to affect the bandgap of the fabricated active region.

[0027] According to at least one embodiment, the first type semiconductor structure and the second type semiconductor structure each have at least one lateral side in addition to the top side. A lateral side is a side of the semiconductor structure that defines the semiconductor structure in a lateral direction. The lateral side can run obliquely or perpendicularly to the top side of the semiconductor structure. Thus, the angle between the top side and the lateral side may be greater than or less than 90°. Preferably, the angle between the lateral side and the top side is greater than 90°, for example greater than 100° and less than 150°.

[0028] According to at least one embodiment, the first type semiconductor structure differs from the second type semiconductor structure in one or more of the following: top area, top-to-side area-ratio, and angle between the top and side.

[0029] When producing an active region on a semiconductor structure, the growth conditions, and in particular the adhesion properties of one or more components of the deposited starting material used to produce the active region, are different on the top and side. This is a consequence of the crystal lattice of the semiconductor structure. For example, some components or elements of the deposited starting material may be repelled or attracted less by the side than the top, or may be repelled or attracted less by the top than the side. This can result in migration / diffusion of components of the deposited starting material from the side to the top, or from the top to the side. Thus, the geometry of the semiconductor structure on which the active region is produced indeed influences the composition of the produced active region and, accordingly, the produced bandgap.

[0030] According to at least one embodiment, the plurality of active regions comprises a plurality of first type active regions and a plurality of second type active regions, each of the first type active regions may be grown on a first type semiconductor structure and / or each of the second type active regions may be grown on a second type semiconductor structure.

[0031] According to at least one embodiment, a plurality of active regions of a first type are accumulated in at least one cluster of the first type, and a plurality of active regions of a second type are accumulated in at least one cluster of the second type. In a cluster of the first type, preferably only active regions of the first type are present. In a cluster of the second type, preferably only active regions of the second type are present. For example, each cluster has at least two active regions, or at least three active regions.

[0032] Within a cluster, the corresponding active areas may be distributed evenly and / or regularly, for example, the pitch between every two adjacent active areas is constant, and the area of ​​the active areas may be the same for all active areas in a cluster.

[0033] In plan view of the main extension surface of the optoelectronic component, each cluster may be assigned an uninterrupted, continuous area. In the present specification, the area of ​​the active area is the area of ​​the active area in plan view of the main extension surface. In the present specification, the pitch between two active areas is understood to be the distance between the centers of two adjacent active areas. For example, the area of ​​each active area may be up to 1000 μm 2 , or up to 75 μm 2 , and / or min. 0.5 μm 2 , or a minimum of 8 μm 2 The area of ​​the active regions may be the same as the area of ​​the top of the assigned semiconductor structure. The pitch between two active regions in each cluster may be up to 10 μm, up to 5 μm, or up to 2 μm, and / or down to 0.2 μm.

[0034] According to at least one embodiment, the first type of cluster differs from the second type of cluster in one or more of the pitch between the active areas in the cluster, the area of ​​the active areas in the cluster. By "area of ​​active areas" it is meant that the area of ​​each first type of active area in the first type of cluster differs from the area of ​​each second type of active area in the second type of cluster. For example, the pitch values ​​differ from each other by at least 1.2 times, or at least 1.5 times, or at least 2 times. The area values ​​may differ from each other by at least 1.2 times, or at least 1.5 times, or at least 2 times.

[0035] As previously described, the adhesion properties of at least one component of the starting material deposited to fabricate the active regions may be different in the regions of the active regions and in the regions between the active regions. As a result, some elements may migrate towards or away from the active regions. Thus, different pitches, i.e. different sizes of the regions between the active regions, and / or different areas of the active regions, result in different bandgaps of the active regions.

[0036] According to at least one embodiment, the first type of active region and the second type of active region are laterally surrounded by masks of different materials, in particular different electrically insulating materials, the masks being used, for example, during growth of the semiconductor material of the active regions to define the areas in which the active regions are to be produced.

[0037] Also, the mask material may have different adhesion conditions for different components of the starting material deposited to fabricate the active region. Thus, some components of the deposited starting material may migrate from the mask towards the adjacent active region or from the active region towards the adjacent mask. Thus, the material of the mask that laterally surrounds the active region actually affects the fabrication of the active region and thus the bandgap of the active region.

[0038] According to at least one embodiment, the material of the mask is selected from SiO2, SiN, TiO, TiN, Al2O3, for example, the material is amorphous up to at least 1100°C.

[0039] According to at least one embodiment, the active region is made of Al n In 1-n-m Ga m N (where 0≦n≦1.0≦m≦1 and m+n≦1).

[0040] According to at least one embodiment, the first type active region and the second type active region have different In concentrations. For example, the second type active region has a higher In concentration than the first type active region. The third type active region may have a higher In concentration than the second type active region. For example, the In concentration in the second type active region is at least 1.2 times the In concentration in the first type active region. The In concentration in the third type active region may be at least 1.2 times the In concentration in the second type active region. By way of example, the following applies: in the first type active region, 0.1≦1-nm≦0.2, in the second type active region, 0.2≦1-nm≦0.35, and / or in the third type active region, 0.35≦1-nm≦0.5.

[0041] According to at least one embodiment, the semiconductor structure is made of Al n In 1-n-m Ga m N, where 0≦n≦1.0≦m≦1 and m+n≦1. For example, the semiconductor structure may have multiple layers, for example multiple layers of InGaN and / or GaN and / or AlInGaN and / or AlGaN.

[0042] According to at least one embodiment, the top sides are each c-planes.The semiconductor structure may have a wurtzite crystal structure.

[0043] According to at least one embodiment, each of the lateral sides is a semi-polar plane.

[0044] Indium has a higher sticking probability on the c-plane than on the semipolar plane. Therefore, during the growth of the semiconductor material in the active region, some In atoms diffuse from the semipolar plane to the c-plane. By adjusting the shape of the semiconductor structure, the In concentration in the fabricated active region can be adjusted.

[0045] According to at least one embodiment, the active regions are elongated. This means that the length of the active regions is, for example, at least 5 times or at least 10 times greater than the width and thickness of the active regions. For example, the active regions are formed as stripes. All active regions may have the same length.

[0046] According to at least one embodiment, the stripes each extend in a longitudinal direction, which in particular is a lateral direction, for example the stripes are all parallel to one another.

[0047] According to at least one embodiment, the stripes are laterally spaced from each other in the transverse direction, the transverse direction being perpendicular to the longitudinal direction. The width of the active areas is measured in the transverse direction. For example, the width of an individual active area is at most 5 μm, or at most 1 μm, and / or at least 0.1 μm.

[0048] The semiconductor structures are preferably formed corresponding to the active regions. For example, the upper side of the semiconductor structure has the same length and width as the active region, and is elongated, for example, in the form of a stripe. The semiconductor structures may be formed as ribs, fins, or walls. The semiconductor structures may each have two lateral sides that laterally define the semiconductor structure.

[0049] According to at least one embodiment, the optoelectronic component is pixelated, meaning that it comprises a plurality of pixels, each pixel being capable of producing and / or emitting electromagnetic radiation.

[0050] According to at least one embodiment, active areas of a first type are assigned to pixels of a first type and active areas of a second type are assigned to pixels of a second type, e.g., each pixel of a first type is assigned two or more active areas of a first type and / or each pixel of a second type is assigned two or more active areas of a second type.

[0051] According to at least one embodiment, the pixels are individually and independently operable to emit electromagnetic radiation. To achieve this, the optoelectronic components may comprise contact elements that can be individually and independently energized. The size of the contact elements may define an area through which electrons and / or holes are provided to the active region to produce electromagnetic radiation.

[0052] For example, in a plan view of the main extension surface of the optoelectronic component, each contact element defining a pixel overlaps only an active region of the first type, or only an active region of the second type, or only an active region of the third type.

[0053] The optoelectronic components may be semiconductor chips, for example LED chips, such as μLED chips (also called μLEDs). The optoelectronic components may be used in AR / VR devices, projectors, or, for example, in car headlights.

[0054] The μLED does not necessarily have to have a rectangular radiation emission surface. For example, the μLED has a radiation emission surface that, in a plan view of the layers of the stack, has a lateral extent of 100 μm or less, or 70 μm or less on either side of the radiation emission surface. For example, if the μLED is a rectangular μLED, the edge length, in particular the edge length in a plan view of the layers of the stack, is 70 μm or less, or 50 μm or less.

[0055] μLEDs can be used in display devices. μLEDs form, for example, pixels or subpixels. The small pixel size and high density, as well as the close distance, make μLEDs suitable for small monolithic displays, especially for AR applications in data glasses. Other applications of μLEDs include the use of μLEDs in data communication or pixelated lighting applications, in addition to AR or VR applications. Different spellings of μLEDs can be found in the literature, such as micro-LED, μ-LED, uLED, u-LED, or micro-light-emitting diode.

[0056] A method for manufacturing an optoelectronic component is then identified, which may be used to manufacture an optoelectronic component according to any of the embodiments disclosed herein, and therefore all features disclosed with respect to the optoelectronic component are also disclosed with respect to the method and vice versa.

[0057] According to at least one embodiment, the method comprises a step of manufacturing at least one active region of a first type. The active region of the first type may be manufactured on a growth substrate, for example on a semiconductor material already grown on a growth substrate. The growth substrate may be, for example, a sapphire substrate, a GaN substrate. The main extension plane of the growth substrate may be parallel to the main extension plane of the entire optoelectronic component.

[0058] The manufacture of the first type of active area comprises the growth, in particular epitaxial growth, of a semiconductor material. The manufacture of the first type of active area may be performed by growth alone, whereby the geometric shape of the first type of active area is formed automatically during growth. Alternatively, the manufacture of the first type of active area may comprise growing a semiconductor layer and then structuring, for example etching, the semiconductor layer into one or more first type of active areas. This patterning may be performed to define pixels of an optoelectronic component.

[0059] According to at least one embodiment, the method includes fabricating at least one active region of a second type laterally beside and laterally spaced from the active region of the first type, the active region of the second type being grown on a growth substrate, for example on semiconductor material already grown on the growth substrate.

[0060] The same as disclosed for making the first type of active region is correspondingly disclosed for making the second type of active region.

[0061] According to at least one embodiment, the starting materials deposited for producing the first type of active region are identical to the starting materials for producing the second type of active region, and the first type and the second type of active region are based on the same semiconductor material system. In particular, the composition of the starting materials in producing the two active regions is identical, i.e. the ratio of different components in the starting materials is identical. Also, the growth conditions, such as temperature and pressure, may be identical in producing the first and second type of active regions.

[0062] According to at least one embodiment, the surface onto which the starting material is deposited to produce the active regions is shaped such that a first type of active region is produced having a different band gap than a second type of active region, in particular such that in different areas at least one component of the starting material has different adhesion properties.

[0063] As previously explained, the surface, e.g., the material or crystal orientation of the surface, can actually affect the adhesion properties of different components of the starting materials used to grow a semiconductor. By tailoring the surface in the area where the active region is to be fabricated and / or the surface adjacent to the area where the active region is to be fabricated, the composition of the fabricated active region can be tailored.

[0064] The step of fabricating at least one first type active region may fabricate multiple first type active regions, and some or all of the first type active regions of the optoelectronic component may be fabricated simultaneously, as may the second and / or third type active regions.

[0065] According to at least one embodiment, the method includes fabricating at least one first-type semiconductor structure, for example on a growth substrate, whereby multiple first-type semiconductor structures are fabricated simultaneously.

[0066] According to at least one embodiment, the method includes, for example, fabricating at least one second-type semiconductor structure on a growth substrate, where multiple second-type semiconductor structures may be fabricated simultaneously.

[0067] A third type of semiconductor structure may also be fabricated, for example, on a growth substrate.

[0068] The first type semiconductor structure and / or the second type semiconductor structure and / or the third type semiconductor structure may be grown using one or more masks, or the semiconductor structures may be formed from the semiconductor layer by growing a semiconductor layer and patterning the semiconductor layer.

[0069] According to at least one embodiment, at least one first-type active region is grown on top of at least one first-type semiconductor structure and at least one second-type active region is grown on top of at least one second-type semiconductor structure.

[0070] According to at least one embodiment, the shape of the first type of semiconductor structure is different from the shape of the second type of semiconductor structure, for example the height of the first type of semiconductor structure is different from the height of the second type of semiconductor structure, the assigned active regions being arranged at different heights / levels, in particular heights or levels with respect to the growth direction.

[0071] According to at least one embodiment, the semiconductor structure has at least one lateral side, for example two lateral sides, in addition to a top side.

[0072] According to at least one embodiment, starting materials are deposited on the top and lateral sides of the semiconductor structure to produce a first type of active region and a second type of active region.

[0073] According to at least one embodiment, the adhesion properties of at least one component of the deposited starting material are different on the top and lateral sides, e.g., the top side is a c-plane and the lateral sides are a semi-polar plane.

[0074] According to at least one embodiment, the first type semiconductor structure differs from the second type semiconductor structure in one or more of the following: top area, top to lateral area ratio, and angle between the top and lateral sides.

[0075] According to at least one embodiment, a plurality of first type active regions and a plurality of second type active regions are fabricated such that the plurality of first type active regions are accumulated in at least one first type cluster and the plurality of second type active regions are accumulated in at least one second type cluster.

[0076] According to at least one embodiment, the first type of cluster differs from the second type of cluster in one or more of the pitch between active areas in the cluster, the area of ​​the active areas in the cluster.

[0077] According to at least one embodiment, when fabricating the first type and second type active regions, different amounts of starting material are deposited in two adjacent first type active regions of a first type cluster, e.g., in the area between each two adjacent first type active regions, and in two adjacent second type active regions of a second type cluster, e.g., in the area between each two adjacent second type active regions. For example, when the areas of the active regions are the same in the first type cluster and the second type cluster, the difference in the amount of deposited starting material in the area between the active regions may result in the band gap in the first type cluster being different from the band gap in the second type cluster.

[0078] According to at least one embodiment, the method includes forming at least one mask on the growth substrate, which may be an insulating, e.g., amorphous, material such as SiO2, SiN, TiO, TiN, Al2O3.

[0079] According to at least one embodiment, the mask is formed with at least one recess that defines an area for the production of the active region. Semiconductor material may be exposed in the recess. For example, the recess is a hole. The recess may define the shape of the semiconductor structure and / or the active region to be produced in the recess. The mask forms part of the surface on which starting material for producing the active region is deposited.

[0080] The active region may be fabricated in one or more recesses, or the semiconductor structure may be fabricated (eg, grown) first and then the active region may be fabricated (eg, grown) on the semiconductor structure.

[0081] For example, the second type active area and / or the third type active area are each manufactured in a recessed area of ​​a mask, and the first type active area may also be manufactured in a recessed area of ​​a mask or without a mask.

[0082] According to at least one embodiment, the adhesion properties of at least one component of the deposited starting material are different on the mask and in the recessed areas, for example the sticking probability of In on the mask is lower than the sticking probability in the recessed areas.

[0083] According to at least one embodiment, the first type of active area is manufactured in a recessed area of ​​a first type of mask, whereby the first type of mask forms part of the surface on which the starting material for manufacturing the first type of active area is deposited.

[0084] According to at least one embodiment, the second type of active area is manufactured in the area of ​​the recess of the second type of mask, whereby the second type of mask forms part of the surface on which the starting material for manufacturing the second type of active area is deposited.

[0085] According to at least one embodiment, the adhesion properties of at least one component of the starting material are different on the first type of mask and on the second type of mask, for example such that at least one component of the starting material is repelled more by one mask than by the other mask. As already explained, the more a component is repelled in the area adjacent to the active region, the higher the concentration of this component can be in the active region. Thus, by using different masks around the areas for producing the first type of active region and the second type of active region, different bandgaps of the first type of active region and the second type of active region can be realized.

[0086] According to at least one embodiment, the first type active region and the second type active region are made of Al n In 1-n-m Ga m N (where 0≦n≦1.0≦m≦1 and m+n≦1).

[0087] According to at least one embodiment, the surface onto which the starting material is deposited is formed such that different concentrations of In accumulate in the first type of active region and the second type of active region, resulting in different bandgaps for the first type of active region and the second type of active region.

[0088] According to at least one embodiment, the active region of the first type is manufactured simultaneously with the active region of the second type, in particular the growth of the semiconductor material of the active regions may be carried out simultaneously.

[0089] According to at least one embodiment, the first type active region and the second type active region are fabricated in sequence, e.g., the first type active region is fabricated before the second type active region. [Brief description of the drawings]

[0090] In the following, the optoelectronic component and the method for manufacturing the optoelectronic component will be described in more detail based on exemplary embodiments with reference to the drawings. The attached figures are included to provide a further understanding. In the figures, elements having the same structure and / or function may be referred to by the same reference signs. It should be understood that the embodiments shown in the figures are examples for illustration and are not necessarily drawn to scale. In so far as elements or parts in different figures correspond to each other in terms of their functions, their description will not be repeated for each of the following figures. For clarity, elements may not be shown with corresponding reference signs in all figures. [Figure 1] 1A-1D show five different exemplary embodiments of an optoelectronic component from different perspectives. [Diagram 2] 1A-1D show five different exemplary embodiments of an optoelectronic component from different perspectives. [Diagram 3] 1A-1D show five different exemplary embodiments of an optoelectronic component from different perspectives. [Figure 4] 1A-1D show five different exemplary embodiments of an optoelectronic component from different perspectives. [Diagram 5] 1A-1D show five different exemplary embodiments of an optoelectronic component from different perspectives. [Figure 6] 1A-1D show five different exemplary embodiments of an optoelectronic component from different perspectives. [Figure 7] 1A-1D show five different exemplary embodiments of an optoelectronic component from different perspectives. [Figure 8] 1A-1D show five different exemplary embodiments of an optoelectronic component from different perspectives. [Figure 9] 1A-1D show five different exemplary embodiments of an optoelectronic component from different perspectives. [Figure 10]1A-1D show five different exemplary embodiments of an optoelectronic component from different perspectives. [Figure 11] FIG. 1 illustrates a first exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 12] FIG. 1 illustrates a first exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 13] FIG. 1 illustrates a first exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 14] FIG. 2 illustrates a second exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 15] FIG. 2 illustrates a second exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 16] FIG. 2 illustrates a second exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 17] FIG. 2 illustrates a second exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 18] FIG. 2 illustrates a second exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 19] FIG. 2 illustrates a second exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 20] FIG. 13 illustrates a third exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 21] FIG. 13 illustrates a third exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 22] FIG. 13 illustrates a third exemplary embodiment of a method for manufacturing an optoelectronic component. [Diagram 23] FIG. 13 illustrates a third exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 24] FIG. 13 illustrates a third exemplary embodiment of a method for manufacturing an optoelectronic component. [Diagram 25]FIG. 13 illustrates a third exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 26] FIG. 4 illustrates a fourth exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 27] FIG. 4 illustrates a fourth exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 28] FIG. 4 illustrates a fourth exemplary embodiment of a method for manufacturing an optoelectronic component. [Figure 29] FIG. 4 illustrates a fourth exemplary embodiment of a method for manufacturing an optoelectronic component. [Diagram 30] FIG. 4 illustrates a fourth exemplary embodiment of a method for manufacturing an optoelectronic component. [Diagram 31] FIG. 4 illustrates a fourth exemplary embodiment of a method for manufacturing an optoelectronic component. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0091] 1 and 2 show a first exemplary embodiment of an optoelectronic component 100. Fig. 1 shows a plan view and Fig. 2 shows a cross-sectional view. The optoelectronic component 100 may be, for example, a μLED for AR / VR applications.

[0092] The optoelectronic component 100 comprises a substrate 15 on which a number of active regions 1, 2, 3 are located. The substrate 15 may be a growth substrate, for example sapphire. The active regions 1, 2, 3 are grown on the upper side 10 of semiconductor structures 11, 12, 13, respectively. Thereby, each active region 1, 2, 3 is assigned one-to-one to a semiconductor structure 11, 12, 13. For example, the semiconductor structures 11, 12, 13 are grown on the substrate 15. The semiconductor structures 11, 12, 13 may be based on n-GaN. The active regions 1, 2, 3 are overgrown by a semiconductor layer 5, for example made of p-doped GaN.

[0093] The semiconductor structures 11, 12, 13 are formed as striped ribs, and therefore the active areas 1, 2, 3 are formed as stripes (see FIG. 1). A mask 31 is located in the lateral areas between the semiconductor structures 11, 12, 13. The mask 31 is used to define and grow the semiconductor structures 11, 12, 13. The mask 31 is, for example, SiO2.

[0094] The multiple active regions 1, 2, 3 include a first type active region 1, a second type active region 2, and a third type active region 3. The first type active region 1 is accumulated in a first type cluster 21, the second type active region 2 is accumulated in a second type cluster 22, and the third type active region 3 is accumulated in a third type cluster 23. The stripe-shaped active regions 1, 2, 3 each extend in a vertical direction L and are arranged one after the other and spaced apart from each other in a horizontal direction T.

[0095] As shown in Fig. 1, the optoelectronic component 100 comprises a number of pixels 51, 52, 53. Each pixel 51, 52, 53 is assigned several active areas of only one specific type. The pixels 51 of the first type are assigned only active areas 1 of the first type, the pixels 52 of the second type are assigned only active areas 2 of the second type, and the pixels 53 of the third type are assigned only active areas 3 of the third type. The pixels 51, 52, 53 are defined by contact elements 41, 42, 43 at the rear side of the substrate 15, which can be energized independently and individually. Only the active areas overlapping the energized contact elements are supplied with electrons or holes and create electromagnetic radiation accordingly.

[0096] The first, second and third type active regions 1, 2, 3 are all based on the same semiconductor material system, such as AlInGaN. For example, the third type active region 3 has the largest In concentration, the first type active region 1 has the smallest In concentration and the second type active region 2 has an intermediate In concentration. Thus, the first type active region 1 has the largest bandgap, the second type active region 2 has the second largest bandgap and the third type active region 3 has the smallest bandgap. All active regions of the same type may have the same bandgap and / or In concentration.

[0097] In this exemplary embodiment, for example, the first type of active region 1 produces blue light, the second type of active region 2 produces green light and the third type of active region 3 produces red light. By energizing the assigned contact elements 41, 42, 43, only blue light or only red light or only green light can be produced. In this way, for example, all active regions are made from the same semiconductor material system, resulting in a pixelated optoelectronic component suitable for display applications. This is advantageous since all active regions have similar operating characteristics. Also in terms of production, such an optoelectronic component is advantageous, as will be explained below.

[0098] In this specification, the reason why different types of active regions have different bandgaps and therefore produce different light is mainly due to the geometric characteristics of the different active regions. As shown in Figures 1 and 2, the pitch between adjacent active regions measured in the lateral direction T is the same in the first type cluster 21, the second type cluster 22, and the third type cluster 23. However, the widths of the active regions 1, 2, 3 measured in the lateral direction T are different for the different types of active regions. The first type active region 1 has the largest width, followed by the second type active region 2, and the third type active region 3 has the smallest width.

[0099] When manufacturing the active regions 1, 2, 3, In, which is a component of the starting material, has a lower sticking probability on the mask 31 than on the semiconductor structures 11, 12, 13. Thus, In atoms migrate from the area of ​​the mask 31 to the area of ​​the semiconductor structures. Since the width of the third type active region 3 is smaller than that of the second type active region 2 and the first type active region 1, the area of ​​the exposed mask 31 is larger in the third type cluster 23 than in the second type cluster 22 and the first type cluster 21. Thus, a larger amount of In atoms migrates to the third type active region 3 than in the third type active region 3, so that the In concentration in the third type active region 3 is the largest. The In concentration in the second type active region 2 is greater than that in the first type active region 1.

[0100] 3 and 4 show a second exemplary embodiment of an optoelectronic component 100. This second exemplary embodiment is similar to the first exemplary embodiment. However, instead of the pitch between adjacent active regions being the same in all clusters 21, 22, 23, the active regions of each cluster have the same width. The pitch in the third type clusters 23 is larger than the pitch in the second type clusters 22, which in turn is larger than the pitch in the first type clusters 21. Also in this configuration, a larger amount of In atoms is deposited on the mask 31 in the area of ​​the third type clusters 23 than in the areas of the second type clusters 22 and the first type clusters 21, so that accordingly the third type active region 3 is produced with the highest In concentration, followed by the second region 2 and then the first type active region 1.

[0101] In the third exemplary embodiment shown in Figures 5 and 6, the pitch and width of the active regions are different in the different cluster types. Nevertheless, the third type of active region 3 is configured to be grown with the largest In concentration, followed by the second type of active region 2, and then the first type of active region 1. The third type of active region 3 is the narrowest, which may partially relax a portion of the indium-containing layer underneath the active region 3, thus allowing a higher incorporation of indium atoms. The large pitch between the active regions 3 can support an increased In concentration.

[0102] In a fourth exemplary embodiment shown in Figures 7 and 8, the pitch between the active areas and the width of the active areas are identical in all clusters 21, 22, 23. However, as shown in Figure 8, the masks laterally surrounding the active areas 1, 2, 3 are different in the different clusters 21, 22, 23. In the first type cluster 21, a first type mask 31 is used. This first type mask 31 may be, for example, aluminum oxide. In the second type cluster 22, a second type mask 32 is used. This second type mask 32 may be, for example, silicon nitride. In the third type cluster 23, a third type mask 33 is used, which may be, for example, silicon oxide.

[0103] Different masks 31, 32, 33 may result in different sticking probabilities for indium, resulting in different amounts of indium migrating to the active areas in different clusters 21, 23, 24 and therefore different types of active areas 1, 2, 3 being produced with different concentrations of indium.

[0104] 9 and 10 show a fifth exemplary embodiment of the optoelectronic component 100. Here, the semiconductor structures 11, 12, 13 in different cluster types have different shapes. The semiconductor structures 11, 12, 13 have inclined lateral sides 14 that are semipolar planes. The upper side 10 of the semiconductor structures 11, 12, 13 is a c-plane. During the growth of the semiconductor material of the active regions 1, 2, 3, the sticking probability of indium is greater on the c-plane than on the semipolar plane. Thus, when manufacturing the active regions 1, 2, 3, some of the In atoms that reach the semipolar planes migrate towards the adjacent c-plane.

[0105] Since the area of ​​the top side 10, the area of ​​the side side 14, and in particular the area ratio between the top side 10 and the side side 14, and / or the angle between the top side 10 and the side side 14, are different in different cluster types, the active regions in different cluster types grow differently with different In concentrations.

[0106] 9 and 10, in particular for the third-type semiconductor structures 13 in the third-type clusters 23, the area ratio between the top side 10 and the lateral side 14 is smallest, so that a relatively large amount of indium reaches the top side 10 and is therefore accumulated in the active region. In the first-type clusters 21, the area ratio between the top side 10 and the lateral side 14 of the associated first-type semiconductor structures 11 is largest, so that the first-type active regions 1 are produced with a smallest In concentration.

[0107] 11 to 13 show a first exemplary embodiment of a method for manufacturing an optoelectronic component in different positions, for example an optoelectronic component 100 as shown in Figs.

[0108] In Fig. 11 a growth substrate 15 is provided. On top of the growth substrate 15 a mask 31, for example of SiO2, is provided. The mask 31 comprises a number of recesses in which the semiconductor structures 11, 12, 13 are grown. The area of ​​the recesses and the pitch between them define the area and pitch of the semiconductor structures 11, 12, 13 and thus the area and pitch of the active regions to be produced.

[0109] In FIG. 12, the locations on the surface 16 where starting material is deposited for growing the active region are shown. The surface 16 is partly defined by a mask 31 and partly defined by different semiconductor structures 11, 12, 13. The deposited starting material comprises In, Al, Ga and N, for example to form AlInGaN. In the areas of the semiconductor structures 11, 12, 13, the sticking probability of indium is high. In the areas defined by the mask 31, the sticking probability is low, and some of the In atoms that reach the mask 31 will then migrate to the adjacent semiconductor structures and be incorporated into the active region being grown. This is shown in FIG. 12.

[0110] Due to the different pitch and area of ​​the recesses in the mask 31, the amount of indium that migrates to the adjacent growing active regions varies. The area of ​​the mask 31 exposed between the active regions of the third type 3 is the largest and the active regions of the third type 3 have the smallest area, so that the active regions of the third type 3 are formed with the largest indium concentration. The area of ​​the mask 31 exposed between the active regions of the first type 1 is the smallest and the active regions of the first type 1 have the largest area, so that the active regions of the first type 1 are formed with the smallest indium concentration. The active regions of the second type 2 are grown with an intermediate indium concentration. Here, the different active regions 1, 2, 3 are grown simultaneously.

[0111] Figure 13 shows the position after the active areas 1, 2, 3 have been grown and overgrown with a semiconductor layer 5. On the underside opposite to the upper side of the substrate 15 there are provided contact elements 41, 42, 43 which define the different pixels.

[0112] 14 to 19 show a second exemplary embodiment of a method for manufacturing an optoelectronic component in different positions.

[0113] In position in FIG. 14 a growth substrate 15, for example of sapphire, is provided.

[0114] In Figure 15, a semiconductor structure is grown using a mask 31 on a growth substrate 15. The semiconductor structure is grown at three different levels.

[0115] FIG. 16 shows a position where more semiconductor material is grown onto the semiconductor structure such that the semiconductor structure tapers in a direction away from the growth substrate 15 .

[0116] In Fig. 17 the semiconductor structures are planarized. Due to the different heights of the initial semiconductor structures, the resulting planar top side 10 of the semiconductor structures 11, 12, 13 in Fig. 17 has different areas. Furthermore, the resulting lateral sides 14 also have different areas. The top side 10 is, for example, a c-plane and the inclined lateral sides 14 are, for example, semi-polar planes.

[0117] 18 shows the location where starting materials for growing AlInGaN are deposited on exposed surface 16 to fabricate the active region. Semipolar surfaces 14 have a lower sticking probability for indium than the c-plane. Thus, some of the In atoms that reach semipolar surface 14 migrate towards the adjacent c-plane 10 and are incorporated into the growing semiconductor material of the active region.

[0118] 18, active regions with different concentrations of indium are grown due to different areas of c-plane and different areas of semi-polar plane 14. Again, different active regions 1, 2, 3 are grown simultaneously.

[0119] Figure 19 shows an optoelectronic component 100 obtained after the active areas 1, 2, 3 have been grown and a semiconductor layer 5 has been grown on top of the active areas 1, 2, 3. The optoelectronic component 100 of Figure 19 is similar to the optoelectronic component 100 of Figures 9 and 10.

[0120] Figures 20 to 25 show a third exemplary embodiment of a method for manufacturing an optoelectronic component. In Figure 20, a growth substrate 15 is provided on which a first type of mask 31 is applied. The mask 31 comprises recesses for defining the first type of active regions.

[0121] 21, semiconductor structures 11 are grown in the areas of the recesses and active regions 1 of a first type are grown on top of these semiconductor structures 11. The active regions 1 of the first type are, for example, made of AlInGaN.

[0122] 22 shows the position after the first type mask 31 has been removed and a second type mask 32 has been provided on the growth substrate 15 and the first type semiconductor structure 11 with the assigned first type active area 1. In the area adjacent laterally to the first type semiconductor structure 11, the second type mask 32 has a recess formed therein which defines the area of ​​the second type active area.

[0123] Figure 23 shows the position after the second type semiconductor structure 22 and the second type active region 2 have been grown. The second type active region 2 is based on the same semiconductor material system as the first type active region 1. The second type semiconductor structure 22 has a different shape than the first type semiconductor structure 11, so that the second type active region 2 has a different In concentration and a different band gap. The reasons for these different In concentrations are the same as those explained with reference to figure 18.

[0124] 24 shows the position after the second type mask 32 has been removed and a third type mask 33 has been applied to the growth substrate 15 and the already grown semiconductor structure 11, 12 with the assigned active areas 1, 2. Also in the third type mask 33 recesses are formed which define the locations where the third type active areas will be manufactured.

[0125] 25 shows the result after the third type semiconductor structure 13 has been grown in the recess of the third type mask 33 and the third type active region 3 has been grown on the third type semiconductor structure 13. The material system of the third type active region 3 is the same as the material system of the second type active region 2 and the first type active region 1. However, the third type semiconductor structure 13 has a different shape than the second type semiconductor structure 12 and the first type semiconductor structure 11, in particular a different area at the top side 10 and at the lateral sides 14, so that the In concentration in the third type active region 3 and accordingly the band gap in the third type active region 3 are different.

[0126] The method of this third exemplary embodiment differs from the previous exemplary embodiments, particularly in that the different types of active regions are grown in sequence.

[0127] In FIG. 25, active areas 1, 2, 3 are overgrown with a semiconductor layer 5.

[0128] 26 to 31 show a fourth exemplary embodiment of a method for manufacturing an optoelectronic component. The method is similar to the method of the third exemplary embodiment. In contrast to the third exemplary embodiment, a semiconductor layer 5, for example p-GaN, is grown on one type of active region before the next type of active region is manufactured.

[0129] This patent application claims priority from German patent application 10 2022 106 583.9, the disclosure content of which is incorporated herein by reference.

[0130] The invention described herein is not limited by the description of the exemplary embodiments, but rather includes any novel feature and any combination of features, and in particular includes any combination of features in the claims, even if that feature or combination is not itself explicitly recited in the claims or in the exemplary embodiments. [Explanation of symbols]

[0131] 1. Type 1 active region 2. Type 2 active region 3. Type 3 active region 5 Semiconductor layer 10 Upper side 11 First type of semiconductor structure 12 Second type of semiconductor structure 13 Third type of semiconductor structure 14 Lateral side 15 Growth substrate 16 Surface 21 Type 1 cluster 22 Clusters of the second type 23 Cluster of the third type 31 Mask 32 Mask 33 Mask 41 Contact Elements 42 Contact Elements 43 Contact Elements 51 1st type pixels 52 Second type of pixels 53 Third type of pixel 100 Optoelectronic Components L Vertical T Horizontal

Claims

1. An optoelectronic component (100) comprising a number of active areas (1, 2, 3) for producing electromagnetic radiation, the active regions (1, 2, 3) are arranged laterally adjacent to each other and spaced apart from each other in the lateral direction; The plurality of active regions (1, 2, 3) comprises at least one first type active region (1) and at least one second type active region (2); said at least one active region of a first type (1) and said at least one active region of a second type (2) are based on the same semiconductor material system and have different bandgaps for producing different electromagnetic radiations; Optoelectronic components (100).

2. said first type active area (1) and said second type active area (2) are laterally surrounded by masks (31, 32) of different material, The material of the masks (31, 32) is SiO ２ , SiN, TiO, TiN, Al ２ O ３ Selected from: The optoelectronic component (100) of claim 1.

3. said first type active region (1) and said second type active region (2) are respectively assigned to each of said semiconductor structures (11, 12) by being grown on the upper side (10) of said semiconductor structures (11, 12); the shape of the first type semiconductor structure (11) assigned to the first type active area (1) is different from the shape of the second type semiconductor structure (12) assigned to the second type active area (2); An optoelectronic component (100) according to claim 1 or 2.

4. said first type semiconductor structure (11) and said second type semiconductor structure (12) each have, in addition to said top side (10), at least one lateral side (14); The first type semiconductor structure (11) comprises: said upper (10) area, the area ratio between the upper side (10) and the lateral side (14); the angle between said upper side (10) and said lateral side (14), different from the second type semiconductor structure (12), An optoelectronic component (100) according to claim 3.

5. The plurality of active regions (1, 2, 3) comprises a plurality of first type active regions (1) and a plurality of second type active regions (2); A plurality of first-type active regions (1) are accumulated in at least one first-type cluster (21), and a plurality of second-type active regions (2) are accumulated in at least one second-type cluster (22); The first type of cluster (21) comprises: the pitch between the active regions (1, 2) in the clusters (21, 22); In one or more of the areas of the active regions (1, 2) in the clusters (21, 22), different from the second type cluster (22), An optoelectronic component (100) according to any one of the preceding claims.

6. The active region (1, 2, 3) is made of Al ｎ In １－ｎ－ｍ G ｍ N, where 0≦n≦1.0≦m≦1, and m+n≦1, The first type active region (1) and the second type active region (2) have different In concentrations. An optoelectronic component (100) according to any one of the preceding claims.

7. The semiconductor structure (11, 12) is Al ｎ In １－ｎ－ｍ G ｍ N, where 0≦n≦1.0≦m≦1, and m+n≦1, The upper side (10) is a c-plane, The lateral sides (14) are each semi-polar planes; An optoelectronic component (100) according to claim 3 or any one of claims 4 to 6 dependent on claim 3.

8. said active areas (1, 2, 3) being formed as stripes; The stripes each extend in a longitudinal direction (L), the stripes are laterally spaced apart from one another in a lateral direction (T); An optoelectronic component (100) according to any one of the preceding claims.

9. The optoelectronic component (100) is pixelated, The first type of active area (1) is assigned to a first type of pixel (51) and the second type of active area (2) is assigned to a second type of pixel (52), said pixels (51, 52) being individually and independently operable to emit electromagnetic radiation; An optoelectronic component (100) according to any one of the preceding claims.

10. The optoelectronic component (100) is a μLED. An optoelectronic component (100) according to any one of the preceding claims.

11. manufacturing at least one active area (1) of a first type; and manufacturing at least one active region of a second type (2) laterally adjacent to and laterally spaced from said active region of the first type (1), the starting material deposited for producing the first type active area (1) is identical to the starting material for producing the second type active area (2), the first type active area (1) and the second type active area (2) being based on the same semiconductor material system, the surface (16) on which the starting material is deposited to produce the active regions (1, 2, 3) is formed in such a way that the first type of active region (1) is produced with a different band gap than the second type of active region (2); A method for manufacturing an optoelectronic component (100).

12. forming at least one mask (31, 32, 33) on a growth substrate (15); said mask (31, 32, 33) is provided with at least one recess defining an area for said fabrication of an active region (1, 2, 3); the adhesion properties of at least one component of the deposited starting material are different on the mask (31, 32, 33) and in the area of ​​the recess; The method of claim 11.

13. said first type active area (1) is produced in said area of ​​the recess of a first type mask (31), said second type active area (2) is produced in said area of ​​the recess of a second type mask (32), the adhesion properties of at least one component of the starting material are different on the first type of mask (31) and on the second type of mask (32); The method of claim 12.

14. Manufacturing at least one semiconductor structure (11) of a first type; and manufacturing at least one second type semiconductor structure (12), said at least one active region (1) of a first type is grown on top (10) of said at least one semiconductor structure (11) of a first type, said at least one active region (2) of a second type is grown on top (10) of said at least one semiconductor structure (12) of a second type; the shape of the first type semiconductor structure (11) is different from the shape of the second type semiconductor structure (12); 14. The method according to any one of claims 11 to 13.

15. The semiconductor structures (11, 12, 13) each have at least one lateral side (14) in addition to the top side (10), said starting material is deposited on said top side (10) and said lateral sides (14) of said semiconductor structure (11, 12, 13) in order to produce said first type active area (1) and said second type active area (2), the adhesion properties of at least one component of the deposited starting material are different on the top side (10) and on the sides (14); The first type semiconductor structure (11) comprises: said upper (10) area, the area ratio between the upper side (10) and the lateral side (14); the angle between said upper side (10) and said lateral side (14), different from the second type semiconductor structure (12), The method of claim 14.

16. A plurality of first-type active regions (1) and a plurality of second-type active regions (2) are manufactured such that the plurality of first-type active regions (1) are accumulated in at least one first-type cluster (21) and the plurality of second-type active regions (2) are accumulated in at least one second-type cluster (22); The first type of cluster (21) comprises: the pitch between the active regions (1, 2) in the clusters (21, 22); the area of ​​the active area (1, 2) in the cluster (21, 22) differs from that of the second type cluster (22); The method according to any one of claims 11 to 15.

17. The first type active region (1) and the second type active region (2) are made of Al ｎ In １－ｎ－ｍ G ｍ N, where 0≦n≦1.0≦m≦1, and m+n≦1, the surface (16) on which the starting material is deposited is shaped such that different concentrations of indium accumulate in the first type of active area (1) and in the second type of active area (2); The method according to any one of claims 11 to 16.

18. said first type active area (1) is manufactured simultaneously with said second type active area (2); The method according to any one of claims 11 to 17.

19. said first type active region (1) and said second type active region (2) are fabricated in sequence; The method according to any one of claims 11 to 17.

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