Method and device for manufacturing a superconducting coil

Abstract

The present disclosure relates to a method for manufacturing a superconducting coil, the method comprising the steps of: providing a structure (202); rotating the structure; forming a first stack of layers on the rotating structure in a low temperature chamber (103); and forming a second stack of layers on the first stack of layers on the rotating structure in a high temperature chamber (105) at a temperature higher than the temperature in the low temperature chamber.

Description

[Technical field]

[0001] The present disclosure relates to methods or processes and devices for manufacturing superconducting coils. More specifically, the present disclosure relates to methods or devices that include a multi-stage coating of a surface of a structure. The structure may be, for example, a cylinder in a broader definition, i.e., a surface in a space formed by parallel straight lines (generatrix), and the surface may be an inner or outer surface of the cylinder. [Background technology]

[0002] The challenges of the 21st century must be met with technologies that push the boundaries of current science. In particular, energy generation through nuclear fusion energy, medical procedures such as magnetic resonance imaging, and transportation systems such as linear motor trains all have in common that they require strong magnetic fields in specific configurations to function properly. Thus, the future world will require methods, devices, and mechanisms that can generate strong magnetic fields and meet the demands of these growing fields.

[0003] The latest development in magnetic fields utilizes high temperature superconductors (HTS). HTS are materials that exhibit superconducting properties at temperatures above 77K, which is generally the boiling point of nitrogen. HTS materials exhibit zero resistance under superconducting conditions, which is usually important to be at the right temperature. Since there is zero resistance, electrical current can flow freely and at high strength through such superconducting materials. Ultimately, this makes it possible to generate high-intensity magnetic fields with specific properties depending on the application requirements. Summary of the Invention [Problem to be solved by the invention]

[0004] Currently, magnetic devices are constructed with large magnets that are formed into coils, which may be permanent or electrical depending on cost or application. Applications that require the magnetic field to be in a specific configuration, such as stellarators, require the coils to be twisted into complex shapes during construction. This significantly increases costs during the design phase, and stellarator designs can become very complex, requiring many tests, and therefore a lot of time and money to build many magnetic coils.

[0005] References to the construction of superconducting coils include U.S. Patent No. 9,812,233 to Sazaki, et. al., which describes the current state of the art in the construction of films of superconducting material, also referred to as tapes. The current state of the art discusses the manufacture of tapes that are stacked to form cable-like structures. The cable-like structures are then shaped according to the needs of the application. The structures may be cut and shaped, twisted, stacked, or otherwise shaped.

[0006] A method of constructing a superconducting coil is described in U.S. Patent No. 8,655,423 to Miyazaki, et al. Miyazaki describes a superconducting coil formed of multiple layers of various materials. A group of these layers are described as making up the superconducting coil portion formed of thin film superconducting wire. The coils described in Miyazaki, and coils common in the art, are constructed in the shape of a wire by placing a superconducting film, also referred to as a superconducting tape, which is then further constructed in the shape of a coil. A review of the prior art indicates that superconducting coils are formed by stacking superconducting films or layers such that current can flow in a desired direction to generate the appropriate magnetic field configuration.

[0007] To the best of the inventors' knowledge and understanding, the prior art does not teach any other manner in which superconducting films or tapes may be used to conduct electrical current.

[0008] The tape itself can be constructed by several methods described in the art. U.S. Patent No. 10,935,799 to Majkic, et al. discloses a method for producing high quality superconducting tape. The Majkic method is limited to applications requiring very thin tape structures. It is not clear from Majkic's description how the process could overcome the limitations of, for example, various tape geometries. The methods described in this prior art are limited to rectangular shapes of moderate size.

[0009] An apparatus and method for forming films on tape substrates is disclosed in U.S. Patent No. 6,147,033 to Youm et al. This apparatus further illustrates the limitations of current methods in the state of the art. A thin film of superconducting material is deposited on a rotating cylinder, which unwinds the tape substrate to form a tape. This method does not allow for shapes other than rectangular tapes. Furthermore, if too much of the tape is left on the tape on the rotating cylinder, the entire tape can be damaged.

[0010] The superconducting tape itself is also in short supply due to high demand, and there are problems with the size and shape of the superconducting tape, which can only be constructed to widths of a few centimeters, plus the process of forming the superconducting tape into wires and then into coils is lengthy and prone to defects.

[0011] Thus, there remains a need for efficient and less expensive alternatives to coils used in magnetic applications. Additionally, there is a need for a method or device that allows for configurations of superconducting coils that can be easily replaced so that configuration changes can be accomplished quickly and at low cost. The prior art has yet to overcome the limitation of producing superconducting tapes of any shape or size, and currently shapes are limited to rectangular geometric configurations. [Means for solving the problem]

[0012] One embodiment addresses all or some of the shortcomings of known methods and devices for constructing superconducting coils.

[0013] One embodiment is a method for manufacturing a superconducting coil, comprising the steps of: - providing a structure; - rotating the structure; - forming a first stack of layers in a low temperature chamber on a rotating structure; and - forming a second stack of layers on the rotating structure at a temperature in the hot chamber that is higher than the temperature in the cold chamber; The present invention provides a method comprising:

[0014] In one embodiment, forming the second laminate comprises depositing at least a superconducting material layer of a superconducting material, and depositing a low resistance material layer of a low resistance material on the superconducting material layer; The method further comprises removing material from at least the layer of superconducting material and the layer of low resistance material to form a pattern defining a groove in at least the layer of superconducting material and the layer of low resistance material.

[0015] In one embodiment, the method further comprises electropolishing the structure in a humidity chamber, for example with an electrolyte and an electrode, after the rotating step and prior to forming the first laminate.

[0016] In one embodiment, the humid chamber, the cold chamber and the hot chamber are one chamber.

[0017] In another embodiment, the humid chamber, the cold chamber and the hot chamber are separate chambers.

[0018] In one embodiment, - forming the first layer stack in the low temperature chamber uses an ejector adapted for a physical vapor deposition process, such as at least a nozzle and / or a target; and / or forming the second stack in the high temperature chamber using at least an ejector, such as a nozzle and / or a target, adapted for a physical vapour deposition process and / or a chemical vapour deposition process;

[0019] In one embodiment, the temperature in the cold chamber is room temperature.

[0020] In one embodiment, the temperature in the high temperature chamber is greater than 500°C.

[0021] In one embodiment, the first stack is formed by at least a physical vapor deposition process such as sputtering, for example magnetron sputtering, oblique substrate deposition, ion beam deposition and / or ion beam assisted deposition.

[0022] In one embodiment, when forming the first laminate, - depositing a first layer of material, such as alumina, onto the structure, for example by sputtering or ion beam deposition; - depositing a second layer of material, such as yttria, onto the first layer, for example by sputtering or ion beam deposition; - A third layer of material, such as magnesium oxide or yttrium stabilized zirconia, is deposited on the second layer, for example using sputtering or ion beam assisted deposition.

[0023] In one embodiment, the second stack is formed by at least a physical vapor deposition process, such as sputtering or pulsed laser deposition, and / or a chemical vapor deposition process, such as a metal-organic chemical vapor deposition process.

[0024] In one embodiment, the second stack is formed by depositing at least a layer of superconducting material, such as rare earth barium copper oxide or yttrium barium copper oxide, using, for example, metal-organic chemical vapor deposition at uniform temperature and laminar flow using vaporized precursors, or pulsed laser deposition.

[0025] In one embodiment, the superconducting material is rare earth barium copper oxide or yttrium barium copper oxide.

[0026] In one embodiment, the superconducting material layer is deposited using metalorganic chemical vapor deposition, for example at uniform temperature and laminar flow using vaporized precursors, or pulsed laser deposition.

[0027] In one embodiment, forming the second stack includes a step of depositing a layer of low resistivity material, such as silver, on the layer of superconducting material.

[0028] In one embodiment, the low resistivity material is silver.

[0029] In one embodiment, when forming the second laminate, - heating the structure to a first temperature, for example in the range of 700°C to 800°C, - depositing a fourth layer of material, such as magnesium oxide or yttrium stabilized zirconia, onto the first stack, for example by metal-organic chemical vapor deposition or pulsed laser deposition; - depositing a fifth layer of a material, such as lanthanum manganate, onto the fourth layer, for example by metalorganic chemical vapor deposition or pulsed laser deposition; - depositing a sixth layer of a superconducting material, such as rare earth barium copper oxide or yttrium barium copper oxide, on said fifth layer, for example by chemical vapor deposition, metalorganic chemical vapor deposition or pulsed laser deposition; - cooling the structure to a third temperature lower than the first temperature, for example in the range of 450°C to 600°C; a seventh layer of a low resistivity material, such as silver, is deposited on said sixth layer, preferably using chemical vapour deposition or metal-organic chemical vapour deposition;

[0030] In one embodiment, when forming the second laminate, - heating the structure to a first temperature, for example in the range of 700°C to 800°C, - depositing a fourth layer of material, such as magnesium oxide or yttrium stabilized zirconia, onto the first stack, for example by metal-organic chemical vapor deposition or pulsed laser deposition; - depositing a fifth layer of a material, such as lanthanum manganate, onto the fourth layer, for example by metalorganic chemical vapor deposition or pulsed laser deposition; - depositing the layer of superconducting material on the fifth layer, for example by chemical vapor deposition, metalorganic chemical vapor deposition or pulsed laser deposition; - cooling the structure to a third temperature lower than the first temperature, for example in the range of 450°C to 600°C; said layer of low resistance material is deposited on said layer of superconducting material, preferably by chemical vapour deposition or metal-organic chemical vapour deposition;

[0031] In one embodiment, upon cooling, an inert gas or steam is injected at a fourth temperature lower than the third temperature.

[0032] In one embodiment, when depositing the sixth layer or the superconducting material layer, vaporized superconducting material precursor is charged into the high temperature chamber at a fifth temperature, for example in the range of 250° C. to 280° C.

[0033] In one embodiment, the method further comprises heating the structure to a second temperature higher than the first temperature, for example in the range of 800° C. to 900° C., between deposition of the fifth layer and deposition of the sixth layer or the superconducting material layer.

[0034] In one embodiment, the method further comprises repeating the step of forming the second laminate in the same order or in a different order, preferably several times, for example 4 to 80 times, to form at least a plurality of second laminates on the first laminate.

[0035] In one embodiment, the method further comprises, preferably after the step of forming the second stack or a plurality of second stacks: - Stopping the rotation of the structure, and / or - The structure is cooled to room temperature.

[0036] One embodiment is a superconducting coil obtained by the method according to the embodiment, - structure, - a first stack of layers on said structure, and - a second stack of layers on said first stack The present invention provides a superconducting coil comprising:

[0037] In one embodiment, the second stack includes a superconducting layer of superconducting material and a low resistivity layer of low resistivity material on the superconducting layer, and the superconducting coil further includes a groove in at least the superconducting layer and the low resistivity layer.

[0038] In one embodiment, - a first stack of said layers on said structure, - a first layer of material, such as alumina, on said structure; - a second layer of material, such as yttria, on said first layer; and - a third layer of material such as magnesium oxide on said second layer; It has - a second stack of at least said layers on said first stack, - a fourth layer of material such as magnesium oxide or yttrium stabilized zirconia on said third layer; - a fifth layer of material such as lanthanum manganate on said fourth layer; - a sixth layer of a superconducting material, such as rare earth barium copper oxide or yttrium barium copper oxide, on said fifth layer; and - a seventh layer of a low resistivity material such as silver on said sixth layer; It has.

[0039] In one embodiment, - a first stack of said layers, - a first layer of material, such as alumina, on said structure; - a second layer of material, such as yttria, on said first layer; and - a third layer of material such as magnesium oxide on said second layer; It has - a second stack of said layers, - a fourth layer of material such as magnesium oxide or yttrium stabilized zirconia on said third layer; - a fifth layer of material such as lanthanum manganate on said fourth layer; - a layer of superconducting material, such as rare earth barium copper oxide or yttrium barium copper oxide, on said fifth layer; and - a layer of low resistivity material, such as silver, on said layer of superconducting material It has.

[0040] In one embodiment, the stack comprises a plurality of second stacks, the layers of the different second stacks being provided in the same order or in different orders.

[0041] In one embodiment, the structure is constructed from Hastelloy or is covered by a layer of Hastelloy.

[0042] In one embodiment, the structure is a cylinder.

[0043] An embodiment is a device for manufacturing a superconducting coil comprising a structure, said device adapted to carry out a method according to an embodiment, - a rotation device adapted to rotate said structure, preferably - at least a heating device adapted to heat said structure, The device is adapted to be housed within the cold chamber, hot chamber and / or humid chamber. [Brief description of the drawings]

[0044] The above and other features and advantages are explained in more detail in the following specific embodiments, given as non-limiting examples with reference to the accompanying drawings, in which:

[0045] [Figure 1] FIG. 1 illustrates a method for manufacturing a superconducting coil. [Diagram 2] FIG. 2 is a perspective view showing a device for manufacturing a superconducting coil. [Diagram 3] 2 is an enlarged view showing the structure of a superconducting coil constructed by the method for manufacturing a superconducting coil of FIG. 1. [Figure 4A] 11 is a perspective view of a superconducting coil illustrating an additional optional step of a method for manufacturing the superconducting coil. [Figure 4B] 11 is a perspective view of a superconducting coil illustrating an additional optional step of a method for manufacturing the superconducting coil. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0046] In the various figures, similar features are indicated by similar reference numerals, and in particular, structural and / or functional features common to the various embodiments may have the same reference numerals and may have the same structural, dimensional and material characteristics.

[0047] For clarity, only those acts and elements useful for understanding the embodiments described herein have been shown and described in detail.

[0048] Unless otherwise indicated, when referring to two elements connected together, this refers to a direct connection without any intermediate elements other than conductors, and when referring to two elements coupled together, this refers to the two elements being either connected or coupled through one or more other elements.

[0049] In the following disclosure, unless otherwise indicated, when reference is made to terms that qualify absolute positions, such as "front", "back", "top", "bottom", "left", "right", or relative positions, such as "upper", "lower", "high", "low", or orientations, such as "horizontal", "vertical", etc., this term refers to the orientation of the drawings.

[0050] Unless otherwise specified, the terms "about," "approximately," "substantially," and "to the extent of" refer to within 10%, preferably within 5%, of the relevant value.

[0051] The drawings are not drawn to scale. It should be noted that the drawings show embodiments of a method and device for manufacturing a superconducting coil, which may be referred to simply as a method or device, respectively, when no ambiguity is assumed. Other embodiments may be possible, as a person with appropriate training may readily recognize. The actual dimensions and / or shapes of each of the parts of the embodiments may vary. Only the essential details of the embodiments are shown, but one of ordinary skill in the art will recognize how the entire device may be constructed without undue experimentation. Although some details have been omitted from the drawings, the inventors believe that the addition of these details is unnecessary for an overall appreciation of the disclosed features of the invention. These omitted details include, among others, elements for holding or fixing the device or its functional parts. Some features of the embodiments may be exaggerated for ease of understanding. The disclosed embodiments and the alternatives described should not be considered as limiting the invention in any manner.

[0052] In the drawings, the structure is a right cylinder (cylinder 202) and the surface to be coated is the exterior surface of said cylinder. In another embodiment, the surface to be coated may be the interior surface of the cylinder. Other shapes of structures having a surface to be coated are possible. In other embodiments, the surface to be coated may be the interior or exterior surface of a non-cylinder and / or a non-right cylinder or any other suitable structure.

[0053] FIG. 2 is a perspective view showing an embodiment of a device 200 for manufacturing superconducting coils using multi-stage coating. The device includes a rotatable rod 204 adapted to hold a flat ring-like or hollow cylinder 202, although the rotatable rod is not necessarily included in the device. The cylinder 202 may be made of a material such as Hastelloy. The rod 204 adapted to hold the cylinder 202 may also be a baton, a large disk, a cylinder or a wheel. The rod 204 should be rotatable, which can be achieved by using a motor or other suitable means. Furthermore, the cylinder 202 should be held on the rod 204 by a means that allows the cylinder 202 to rotate together with the rod 204. At least one of the rods 204 may be connected to a heating ring or a heating resistor 206. The heating resistor 206 heats the rod 204, which in turn heats the cylinder 202. The rod 204 may function as an electrode used to pass a current through the cylinder 202 to heat it. The device of Fig. 2 may be housed in a chamber suitable for operations such as chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), or magnetron sputtering, among others. Other heating methods may be used instead of the heating resistor 206, and in other embodiments, an inductive or ohmic heating coil may be used, which may be included at least inside the cylinder 202.

[0054] When referring to a cylinder, the cylinder includes a flat ring or a hollow cylinder.

[0055] Another example of a device for uniformly coating a surface, which may be applied to manufacture superconducting coils, is described in European Patent Application No. 22305449, filed on April 4, 2022 by the same applicant "Renaissance Fusion", entitled "UNIFORM COATING OF A SURFACE", which is incorporated by reference to the maximum extent permitted by law.

[0056] 1 shows an embodiment of a method for manufacturing a superconducting coil. The method is divided into three main states or stages, since the processing in the stages takes place in three different chambers: a wet chamber 101, a cold chamber 103 and a hot chamber 105.

[0057] The wet chamber 101 may be filled with an electrolyte to perform electropolishing 106 on the surface of the cylinder 202. Therefore, the wet chamber 101 may further comprise electrodes for this purpose.

[0058] In the low temperature chamber 103 several processes may be carried out based on physical vapor deposition (PVD) techniques. In the embodiment shown there are three processes, two based on sputtering, usually magnetron sputtering, in an alumina sputtering step 108 adapted for the deposition of alumina and a yttria sputtering step 110 adapted for the deposition of yttria, and one based on ion beam assisted deposition (IBAD) in a magnesium oxide (MgO) step 112 adapted for the deposition of MgO.

[0059] Other PVD techniques may be used in the low temperature chamber, depending on the material to be deposited. For example: Ion Beam Deposition (IBD) may be used instead of sputtering to deposit alumina and / or yttria; and / or Sputtering, usually magnetron sputtering, or oblique substrate deposition (ISD) may be used instead of IBAD to deposit the MgO.

[0060] Thus, the low temperature chamber 103 preferably comprises at least an ejector such as a target or a nozzle and / or may comprise a source depending on the technology used, for example magnetron sputtering and IBAD.

[0061] When referring to an ejector, the ejector may have a target or a nozzle depending on the technology used.

[0062] The high temperature chamber 105 contains a number of processes based on physical vapor deposition (PVD) and / or chemical vapor deposition (CVD) techniques. In the illustrated embodiment, at least six processes may be included, including a heating to 700° C.-800° C. step 120 for heating the cylinder 202 to a temperature (first temperature) in the range of 700° C.-800° C.; three CVD and / or PVD steps adapted for deposition of material, including a MgO step 118 adapted for deposition of MgO, a LMO step 116 adapted for deposition of lanthanum manganite (LMO), and a REBCO step 114 adapted for deposition of rare earth barium copper oxide (REBCO) or another suitable superconducting material; a cooling to 450° C.-600° C. step 124 for cooling the cylinder 202 to a temperature (third temperature), e.g., 500° C.-600° C.; and a CVD or PVD step adapted for deposition of a low resistivity material, in this example silver (Ag), on the surface of the cylinder 202. Instead of silver, another low resistivity material, e.g., 5×10 -8 It may be a material having an electrical resistivity lower than Ω×m, for example gold (Au), magnesium (Mg) or copper (Cu).

[0063] At this stage, the barrel may be heated again, e.g., in a heating step 120 to 700° C.-800° C., to repeat the process at least once in a high temperature chamber, or the barrel 202 may be stopped, e.g., in a stopping barrel rotation step 126. The method may further include a cooling step 128 to room temperature, either before, after or during the stopping barrel rotation step 126, which ends the process.

[0064] Currently, it may be envisaged that the cooling step 124 to 450° C.-600° C. is performed by convection heating by injecting an inert gas or steam at a lower temperature (fourth temperature), but other methods may also be possible.

[0065] In the high temperature chamber, various CVD or PVD techniques may be used, which may depend on the material to be deposited. For example: Standard CVD or MOCVD may be used to deposit MgO and / or LMO. The CVD techniques MOCVD, metal organic deposition (MOD), reactive co-evaporation (RCE) or the PVD technique pulsed laser deposition (PLD) may be used to deposit REBCO or another superconducting material. - Sputtering, usually DC sputtering, may be used as a PVD technique to deposit the silver. Standard CVD or MOCVD may be used to deposit the silver epitaxial layer.

[0066] If necessary, depending on the technology used in the REBCO step 114, a heating step 115 to 800°C-900°C (second temperature), e.g. 850°C-890°C, may be required between the LMO step 116 and the REBCO step 114 to heat the cylinder 202 to a temperature compatible with the REBCO step 114.

[0067] The high temperature chamber 105 preferably includes at least an ejector, such as a nozzle, for performing CVD and / or PVD processes, depending on the technique or techniques used.

[0068] The temperature ranges for the cold and hot chambers are given in the context of the technique used and the material being deposited, and one skilled in the art will understand how to adapt the temperature ranges for other techniques and / or other materials.

[0069] The processing in the three chambers, the wet chamber 101, the low temperature chamber 103 and the high temperature chamber 105, may take place in three different chambers, meaning that the cylinder needs to be removed from one chamber and placed in the next, or the processing can all take place in one chamber.

[0070] Example of operation A detailed operation example will be described based on the process shown in FIG. 1 and using the device in FIG.

[0071] The illustrated method begins in a wet chamber 101, where a start cylinder rotation step 104 rotates a cylinder 202 as shown in FIG. 2. A rod 204 rotates the cylinder 202. After rotation is initiated, the cylinder 202 is immersed in an electrolyte and aligned with a suitable electrode to polish the surface by an electrolytic polishing process in an electrolytic polishing step 106. The electrolytic polishing process may include rinsing steps before and after polishing and subsequent drying. Additionally, the electrolytic polishing step 106 may be repeated several times to reach a certain level of polishing. In an embodiment where the wet chamber 101 and the cold chamber 103 are separate, the cylinder 202 is introduced into the cold chamber 103.

[0072] In the cold chamber 103, at least a magnetron sputtering ejector, such as a target or nozzle, deposits layers of alumina and yttria, and an IBAD target deposits magnesium oxide MgO. The first step in the cold chamber 103 is an alumina sputtering step 108. The magnetron sputtering ejector injects aluminum and oxygen into the chamber to deposit alumina on the surface of the cylinder 202. Once the alumina is deposited, in a second step called a yttria sputtering step 110, the same or another magnetron sputtering ejector injects yttrium and oxygen into the chamber to deposit yttria on the surface of the cylinder. The final step in the cold chamber is the deposition of MgO by using ion beam assisted deposition with magnesium and oxygen targets. This step is called IBAD MgO step 112. The steps in the cold chamber 103 can be performed at room temperature. Nevertheless, it is necessary to heat the surface of the cylinder 202 for the next step of the method, so it may be necessary to transfer the cylinder 202 to another chamber where the surface of the cylinder can be heated, or it may even be possible to heat the cylinder using a heating resistor 206.

[0073] The first step in the high temperature chamber 105 is a heating step 120 to 700°C-800°C where the cylinder is heated to 700°C-800°C. At this temperature, it is possible to use metal organic chemical vapor deposition (MOCVD) to deposit MgO and LMO on top of the material deposited in the low temperature chamber 103. First, MOCVD is used to deposit MgO in MgO step 118. The high temperature chamber 105 is filled with vaporized MgO precursor that exhibits laminar flow around the cylinder 202 at uniform temperature, thus depositing MgO on the cylinder surface. The same process is repeated in LMO step 116, but this time using lanthanum manganate LMO precursor at uniform temperature and laminar flow. After the LMO is deposited, the temperature in the high temperature chamber 105 may be further increased to 850° C., for example, 850° C. to 890° C., in a heating step 115 to 800° C. to 900° C., prior to the REBCO step 114. As part of the REBCO step 114, a vaporized REBCO precursor may be included in a superconducting material, such as rare earth barium copper oxide, that exhibits laminar flow around the cylinder 202. In an embodiment, the temperature of the REBCO precursor is in the range of 250° C. to 280° C. (fifth temperature). For each of the MgO step 118, the LMO step 116, and the REBCO step 114, pulsed laser deposition (PLD), for example, may be used instead of MOCVD. The next step, a cooling step 124 to 450° C. to 600° C., cools the cylinder 202. At this temperature, chemical vapor deposition or metalorganic chemical vapor deposition can be used to deposit silver on the surface of the cylinder. Ag Step 122 deposits silver, or another low resistivity material.

[0074] Once the silver has been deposited, the cylinder can be heated again and the previous steps of the method repeated. The following six or seven steps can be repeated in sequence: heating to 700° C.-800° C. step 120, MOCVD MgO step 118, LMO step 116, possibly heating to 850° C.-890° C. step 115, REBCO step 114, cooling to 450° C.-600° C. step 124, and (MO)CVD Ag addition step 122. These steps can be repeated any number of times deemed appropriate for at least this embodiment, and can be repeated a total of 4 to 80 times, such as 20 to 40 times.

[0075] At any stage in the method, preferably after (MO)CVD Ag addition step 122, the cylinder 202 may be stopped by stopping the rod 204, which is cylinder rotation stop step 126. Once the cylinder 202 has stopped, it may be cooled to room temperature in cool to room temperature step 128. The cylinder 202 may then be removed from the chamber and then cut or used as needed for the application.

[0076] Superconducting coil structure In the example of a superconducting coil 300 constructed in accordance with the description of FIG. 1, the superconducting coil is made up of layers that are chemically or otherwise bonded together as shown in FIG. 3. The first layer is a Hastelloy layer 302, which may be polished in a wet chamber 101 in an electropolishing step 106. Once the cylinder 202 enters the low temperature chamber 103, other layers are added. On top of the Hastelloy layer 302, a layer of alumina is sputtered in an alumina sputtering step 108, which is alumina layer 304. On top of the alumina layer 304, yttria is sputtered as part of a yttria sputtering step 110, which is yttria layer 306. On top of the yttria layer 306, a layer of MgO is deposited, which is done in an IBAD MgO step 112, which becomes the first MgO layer 308. The cylinder 202 is then introduced into the high temperature chamber 105 where the final layer is added. The next layer added is a second MgO layer 310. The second MgO layer 310 is deposited on the first MgO layer 308 by using MOCVD. A MOCVD process is further used to deposit a layer of lanthanum manganate LMO on the second MgO layer 310, which is LMO layer 312. MOCVD is again used to deposit a layer of REBCO 314 on the LMO layer 312, which is REBCO layer 314. A layer of low resistivity material, silver Ag in this example, is deposited on the REBCO layer 314, preferably using CVD or MOCVD, which is silver layer 316. The formation of a silver layer using (MO)CVD has advantages over, for example, sputtering techniques for forming layers using suitable crystals, and can be advantageous when forming a new series of layers on top of the silver layer.

[0077] Any layer formed in the low temperature chamber may be referred to as the "first stack of layers" or the "first stack," and any layer formed in the high temperature chamber may be referred to as the "second stack of layers" or the "second stack."

[0078] The alumina, yttria, MgO and LMO layers may be referred to as “buffer layers.” The buffer layers may form a suitable template for forming a superconducting layer.

[0079] The final series of four layers in the high temperature chamber 105, namely the second MgO layer 310, the LMO layer 312, the REBCO layer 314 and the silver layer 316, may be repeatedly deposited in the same or different order. These four layers may be repeatedly deposited on top of the layers deposited during processing in the low temperature chamber 103, for example on top of the first MgO layer 308, to form a stack or wafer of layers repeated 4-80 times, for example 20-40 times.

[0080] Other suitable materials and numbers of layers may be substituted for those described herein.

[0081] For example, instead of an MgO layer in a low temperature chamber, a yttrium stabilized zirconia (YSZ) layer may be formed using a PVD technique such as sputtering, ISD, IBD or IBAD, and instead of an MgO layer in a high temperature chamber, an epitaxial YSZ layer may be formed using a PVD technique such as CVD, MOCVD or IBAD.

[0082] As another example, instead of the sequence of layers described, the following sequence of layers may be applied over the Hastelloy layer 302, preferably: - First CeO in a low temperature chamber using PVD techniques such as IBD and / or sputtering. 2 layer and YSZ layer, - a second CeO in a high temperature chamber using a PVD technique or a CVD technique, such as one of the techniques already listed, depending on the material to be deposited. 2 layer, optionally an LMO layer, an REBCO layer, and an Ag layer. The electrodes may be formed in the order of

[0083] In other embodiments, the REBCO in the REBCO layer 314 may be replaced with other rare earth materials that exhibit high temperature superconductivity, such as YBCO.

[0084] In other embodiments, the silver in silver layer 316 may be replaced with another low resistivity material, such as gold, magnesium, or copper.

[0085] In one embodiment, the last silver layer, i.e. the silver layer of the last series of layers where layers 310, 312, 314, 316 are repeated, may be replaced by a copper layer. Indeed, the silver layer may be particularly suited as a starting layer for a layer repeat, but may be less relevant in the last series of layers where no repeat takes place, the copper layer being cheaper than silver, faster to grow using, for example, electroplating, and harder.

[0086] Additional Embodiments After the last low-resistance material layer is formed, an additional step may be provided to remove material from at least the low-resistance material layer, the superconducting layer, and possibly at least partially the buffer layer and / or the stack of layers, to form a pattern constituting one or more grooves 410, as shown in FIG. 4B. The shape of the pattern may be application dependent. To remove material, techniques such as laser patterning 401 may be used, as shown in FIG. 4A. Other techniques such as mechanical or photolithography may also be used. The grooves may be filled with a metal, for example silver.

[0087] The superconducting coil cylinder may be machined to have a particular shape, and the superconducting coil may be assembled to other superconducting coils of similar or different shapes to form an assembly, such as multiple modular coils, e.g., multiple superconducting coils may be assembled to form a stellarator.

[0088] Exemplary embodiments of the present invention are summarized below: Other embodiments may be further understood from the entire specification and claims of this application.

[0089] Example 1. A method for manufacturing a superconducting coil, comprising: - providing a structure (202); - a rotation step of rotating the structure; - forming a first stack of layers in a low temperature chamber (103) on a rotating structure; and - forming a second stack of layers on the rotating structure at a temperature in the hot chamber (105) that is higher than the temperature in the cold chamber; The method comprising:

[0090] Example 2. The method of example 1, further comprising the step of electropolishing the structure in a wet chamber (101), for example with an electrolyte and electrodes, after the rotating step and before forming the first laminate.

[0091] Example 3. The method according to example 2, wherein the humid chamber (101), the low temperature chamber (103) and the high temperature chamber (105) are one chamber.

[0092] Example 4. The method of example 2, wherein the humid chamber (101), the cold chamber (103) and the hot chamber (105) are separate chambers.

[0093] Example 5. - the step of forming the first layer in the low temperature chamber (103) uses at least an ejector adapted for a physical vapor deposition step, such as a nozzle and / or a target; and / or The method according to any one of the preceding claims, wherein the step of forming the second stack in the high temperature chamber (105) uses an ejector, such as at least a nozzle and / or a target, adapted for a physical vapor deposition step and / or a chemical vapor deposition step.

[0094] Example 6. The method according to any one of Examples 1 to 5, wherein the temperature in the low temperature chamber (103) is room temperature and / or the temperature in the high temperature chamber is higher than 500°C.

[0095] Example 7. The method according to any one of Examples 1 to 6, wherein when forming the first laminate, at least a physical vapor deposition step such as sputtering, e.g. magnetron sputtering, oblique substrate deposition, ion beam deposition and / or ion beam assisted deposition is performed.

[0096] Example 8 When forming the first laminate, - depositing a first layer (304) of material, such as alumina, onto the structure (202), for example by sputtering or ion beam deposition; - depositing a second layer (306) of material, such as yttria, onto the first layer (304), for example by sputtering or ion beam deposition; The method according to any one of the preceding embodiments, wherein a third layer (308) of a material such as magnesium oxide or yttrium stabilized zirconia is deposited on the second layer (306), for example by sputtering or ion beam assisted deposition.

[0097] Example 9. The method according to any one of Examples 1 to 8, wherein forming the second stack includes at least a physical vapor deposition step, such as sputtering or pulsed laser deposition, and / or a chemical vapor deposition step, such as a metalorganic chemical vapor deposition step.

[0098] Example 10. The method of any one of Examples 1 to 9, wherein in forming the second stack, at least a layer (314) of superconducting material, such as rare earth barium copper oxide or yttrium barium copper oxide, is deposited, for example, using metal organic chemical vapor deposition at uniform temperature and laminar flow using vaporized precursors, or pulsed laser deposition.

[0099] Example 11. The method of example 10, further comprising the step of depositing a layer (316) of low resistivity material, such as silver, on the layer (314) of superconducting material when forming the second stack.

[0100] Example 12. When forming a second laminate, - heating the structure (202) to a first temperature, for example in the range of 700°C to 800°C, - depositing a fourth layer (310) of material, such as magnesium oxide or yttrium stabilized zirconia, onto the first stack, for example by metal-organic chemical vapor deposition or pulsed laser deposition; - depositing a fifth layer (312) of a material, such as lanthanum manganate, on the fourth layer, for example by metalorganic chemical vapor deposition or pulsed laser deposition; - depositing a sixth layer (314) of a superconducting material, for example rare earth barium copper oxide or yttrium barium copper oxide, on the fifth layer, for example by chemical vapor deposition, metalorganic chemical vapor deposition or pulsed laser deposition; - cooling the structure to a third temperature lower than the first temperature, for example in the range of 450°C to 600°C; The method according to any one of the preceding embodiments, wherein a seventh layer (316) of a low resistivity material, such as silver, is deposited on the sixth layer, preferably by chemical vapor deposition or metalorganic chemical vapor deposition.

[0101] Example 13. The method of example 12, wherein the cooling step comprises injecting an inert gas or steam at a fourth temperature lower than the third temperature.

[0102] Example 14. The method of example 12 or 13, wherein in the step of depositing the sixth layer (314), the vaporized superconducting material precursor is charged into the high temperature chamber at a fifth temperature, for example, in the range of 250°C to 280°C.

[0103] Example 15. The method of any one of Examples 12-14, wherein between the deposition of the fifth layer and the deposition of the sixth layer, heating is performed to a second temperature higher than the first temperature, for example in the range of 800°C to 900°C.

[0104] Example 16. The method according to any one of Examples 1 to 15, wherein the step of forming the second laminate is repeated in the same order or in a different order, preferably several times, for example 4 to 80 times, to form at least a plurality of second laminates on the first laminate.

[0105] Example 17. Preferably, after the step of forming the second laminate or a plurality of second laminates, - Stopping the rotation of the structure, and / or The method according to any one of the preceding claims, wherein the structure is cooled to room temperature.

[0106] Example 18. A superconducting coil (300) obtained by the method according to any one of Examples 1 to 17, - Structure (202), - a first stack of layers on the structure, and - a second stack of layers on the first stack A superconducting coil comprising:

[0107] Example 19. - a first stack of layers on the structure, - a first layer (304) of material such as alumina on the structure, - a second layer (306) of material such as yttria on the first layer, and - a third layer of material such as magnesium oxide (308) on the second layer It has - at least a second stack of layers on the first stack, - a fourth layer (310) of material such as magnesium oxide or yttrium stabilized zirconia on the third layer, - a fifth layer (312) of material such as lanthanum manganate on the fourth layer, - a sixth layer (314) of superconducting material, such as rare earth barium copper oxide or yttrium barium copper oxide, on the fifth layer; and - A seventh layer of low resistivity material such as silver (316) on the sixth layer. The superconducting coil (300) according to Example 18, comprising:

[0108] Example 20. A superconducting coil as described in Example 18 or 19, comprising a plurality of second stacks, the layers of different second stacks being arranged in the same order or in different orders.

[0109] Example 21. The method according to any one of Examples 1 to 17 or the superconducting coil according to any one of Examples 18 to 20, wherein the structure (202) is made of Hastelloy or is covered with a Hastelloy layer (302) and / or the structure is a cylinder.

[0110] Example 22. A device (200) for manufacturing a superconducting coil comprising a structure (202), the device being adapted to carry out the method according to any one of examples 1 to 17, - a rotation device adapted to rotate said structure, preferably - at least a heating device (206) adapted to heat the structure, The device is adapted to be housed within a cold chamber (103), a hot chamber (105) and / or a humid chamber (101).

[0111] Example 23. The device of example 22, wherein the rotating device is adapted to hold the structure.

[0112] Example 24. The rotating device is at least one rotating body (204), preferably several rotating bodies, adapted to be coupled to another surface of the structure (202) different from the surface to be coated, such that rotation of the at least one rotating body causes the structure to rotate, and - at least a drive unit, such as a motor, adapted to be coupled to the at least one rotating body for rotating the at least one rotating body; 24. The device of Example 22 or 23, comprising:

[0113] Example 25. The device according to example 24, wherein at least one rotating body (204) is a baton, rod, disk, cylinder or wheel.

[0114] Example 26. A device according to any one of Examples 22 to 25, wherein the heating device comprises a heating resistor (206), an induction coil or an ohmic heating coil connected to at least one rotating body (204).

[0115] Various embodiments and variations have been described, and those skilled in the art will understand that certain features of these embodiments can be combined, and other variations will readily occur to those skilled in the art.

[0116] Finally, the actual implementation of the embodiments and variations described herein is within the skill of those of ordinary skill in the art based on the functional descriptions provided above.

[0117] List of acronyms HTS High Temperature Superconductor Ag silver LMO Lanthanum Manganate MgO Magnesium oxide REBCO Rare Earth Barium Copper Oxide YBCO Yttrium Barium Copper Oxide YSZ Yttrium-stabilized zirconia CEO 2 Cerium oxide PVD Physical Vapor Deposition IBAD Ion Beam Assisted Deposition IBD Ion Beam Deposition PLD Pulsed Laser Deposition ISD diagonal substrate deposition method CVD Chemical Vapor Deposition MOCVD Metal-organic chemical vapor deposition MOD metal organic deposition method RCE Reactive Co-Evaporation

[0118] This application is based on and claims priority to European Patent Application No. 22305437, filed April 4, 2022, entitled "METHOD FOR MANUFACTURING SUPERCONDUCTING COILS AND DEVICE," and European Patent Application No. 22305449, filed April 4, 2022, entitled "UNIFORM COATING OF A SURFACE," which are incorporated by reference to the fullest extent permitted by law.

Claims

1. A method for manufacturing a superconducting coil, - The process of preparing the structure, - A rotation step of rotating the aforementioned structure, - A step of forming a first laminate of layers on a rotating structure in a low-temperature chamber, and - A process of forming a second laminate of layers on a first laminate of a rotating structure in a high-temperature chamber at a temperature higher than the temperature in the low-temperature chamber. It has, When forming the second laminate, at least a superconducting material layer is deposited, and a low-resistance material layer is deposited on the superconducting material layer. Furthermore, a method comprising removing material from at least the superconducting material layer and the low-resistance material layer, and forming groove patterns in at least the superconducting material layer and the low-resistance material layer.

2. The method according to claim 1, further comprising the step of electropolishing the structure in a wet chamber using, for example, an electrolyte and electrodes, after the rotation step and before forming the first laminate.

3. The method according to claim 2, wherein the humidifying chamber, the low-temperature chamber, and the high-temperature chamber are a single chamber.

4. The method according to claim 2, wherein the humidifying chamber, the low-temperature chamber, and the high-temperature chamber are separate chambers.

5. - In the step of forming the first laminate in the low-temperature chamber, an ejector suitable for the physical vapor phase growth process, such as a nozzle and / or a target, is used, and / or - The method according to any one of claims 1 to 4, wherein in the step of forming the second laminate in the high-temperature chamber, an ejector suitable for a physical vapor deposition process and / or a chemical vapor deposition process, such as a nozzle and / or a target, is used.

6. The method according to any one of claims 1 to 4, wherein the temperature in the low-temperature chamber is room temperature and / or the temperature in the high-temperature chamber is higher than 500 °C.

7. The method according to any one of claims 1 to 4, wherein when forming the first laminate, at least a physical vapor phase growth step such as sputtering, for example magnetron sputtering, oblique substrate deposition, ion beam deposition and / or ion beam assisted deposition is performed.

8. When forming the first laminate, - For example, a first layer of a material such as alumina is deposited on the structure using sputtering or ion beam deposition. - For example, a second layer of material such as yttria is deposited on the first layer using sputtering or ion beam deposition. - The method according to any one of claims 1 to 4, wherein a third layer of a material such as magnesium oxide or yttrium-stabilized zirconia is deposited on the second layer, for example, using sputtering or ion beam-assisted deposition.

9. The method according to any one of claims 1 to 4, wherein when forming the second laminate, at least a physical vapor deposition step, for example, sputtering or pulsed laser deposition, and / or a chemical vapor deposition step, for example, an organometallic chemical vapor deposition step is performed.

10. The superconducting material is rare-earth barium copper oxide or yttrium barium copper oxide, and / or The method according to any one of claims 1 to 4, wherein when depositing the superconducting material layer, for example, an organometallic chemical vapor deposition method using a vaporized precursor at a uniform temperature and laminar flow, or a pulsed laser deposition method is used.

11. The method according to claim 10, wherein the low-resistance material is silver.

12. When forming the second laminate, - The structure is heated to a first temperature, for example, in the range of 700°C to 800°C. - For example, a fourth layer of a material such as magnesium oxide or yttrium-stabilized zirconia is deposited on the first laminate using metal-organic chemical vapor deposition or pulsed laser deposition. - For example, a fifth layer of material such as lanthanum manganate is deposited on the fourth layer using metal-organic chemical vapor deposition or pulsed laser deposition. - For example, the superconducting material layer is deposited on the fifth layer using chemical vapor deposition, metal-organic chemical vapor deposition, or pulsed laser deposition. - The structure is cooled to a third temperature lower than the first temperature, for example, in the range of 450°C to 600°C. - The method according to any one of claims 1 to 4, wherein the low-resistance material layer is deposited on the superconducting material layer, preferably using chemical vapor deposition or organometallic chemical vapor deposition.

13. The method according to claim 12, wherein, when cooling, an inert gas or vapor is injected at a fourth temperature lower than the third temperature.

14. The method according to claim 12, wherein when depositing the superconducting material layer, vaporized superconducting material precursor is filled into the high-temperature chamber at a fifth temperature, for example, in the range of 250 °C to 280 °C.

15. The method according to claim 12, wherein the structure is heated to a second temperature higher than the first temperature, for example, in the range of 800 °C to 900 °C, between the deposition of the fifth layer and the deposition of the superconducting material layer.

16. The method according to any one of claims 1 to 4, wherein the step of forming the second laminate is repeated several times, preferably 4 to 80 times, in the same order or in different orders, in order to form at least a plurality of second laminates on the first laminate.

17. A superconducting coil obtained by the method according to any one of claims 1 to 4, - structure, - The first laminate of layers on the aforementioned structure, - A second laminate of layers on the first laminate, the second laminate comprising a superconducting material layer of a superconducting material and a low-resistance material layer of a low-resistance material on the superconducting material layer, and - Grooves in at least the superconducting material layer and the low-resistance material layer A superconducting coil equipped with [a specific feature].

18. - The first laminate of the aforementioned layers is - A first layer of a material such as alumina on the aforementioned structure, - A second layer of material such as yttria on the first layer, and - A third layer of material such as magnesium oxide on the second layer It has, - The second laminate of the aforementioned layer is - A fourth layer of material such as magnesium oxide or yttrium-stabilized zirconia on the third layer, - A fifth layer of material such as lanthanum manganate on the fourth layer, - The superconducting material layer on the fifth layer, such as a rare earth barium copper oxide or yttrium barium copper oxide, and - Low-resistance material layer of silver or other low-resistance material on the superconducting material layer A superconducting coil according to claim 17, having the following:

19. The superconducting coil according to claim 17, comprising a plurality of second laminates, wherein the layers of the different second laminates are arranged in the same or different order.

20. A device for manufacturing a superconducting coil having a structure, The device is adapted to perform the method according to any one of claims 1 to 4, - It is equipped with a rotating device adapted to rotate the aforementioned structure, preferably, - The system comprises at least a heating device adapted to heat the aforementioned structure, The device is adapted to be housed within the low-temperature chamber, high-temperature chamber, and / or humid chamber.

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