Light emitting diode module and display device including the same

Abstract

According to one aspect of the present invention, a light-emitting diode module can be provided, comprising: a light-emitting diode capable of emitting light; a conductive pattern layer electrically connected to the light-emitting diode; and an electrically insulated cover layer disposed on the conductive pattern layer, the cover layer being disposed between the light-emitting diode and the conductive pattern layer such that, when viewed from above the light-emitting diode, the cover layer has an area that at least partially overlaps with the light-emitting diode.

Description

[Technical field]

[0001] The present invention relates to a light emitting diode module and a display device including the same. [Background technology]

[0002] In general, a light emitting diode (LED) is a device that converts electrical energy into light. Such LEDs are widely used in various light sources such as backlights, lighting, traffic lights, displays, etc., and can be used in a packaged form together with a circuit board, etc.

[0003] Meanwhile, the light emitting diode can be mounted on the circuit board by solder, etc. However, if the distance between the light emitting diode and the circuit board is large, the light emitting diode is difficult to fix in an accurate position on the circuit board as the amount of solder increases. Summary of the Invention [Problem to be solved by the invention]

[0004] One embodiment of the present invention has been invented in light of the above-mentioned background, and aims to provide an LED module that can fix an LED to an accurate position on a circuit board by minimizing the gap between the LED and the circuit board. [Means for solving the problem]

[0005] According to one aspect of the present invention, a light-emitting diode module is provided, including a light-emitting diode capable of emitting light; a conductive pattern layer electrically connected to the light-emitting diode; and a cover layer disposed on the conductive pattern layer and electrically insulated. In the present disclosure, the light-emitting diode module can be realized as a part of a display device, and it is obvious that a configuration applied to the light-emitting diode module can also be applied to the display device according to an embodiment. For convenience, the present disclosure mainly describes the light-emitting diode module. According to one embodiment, the cover layer can be disposed between the light-emitting diode and the conductive pattern layer such that the cover layer has an area at least partially overlapping with the light-emitting diode when viewed from above the light-emitting diode.

[0006] According to an embodiment, the cover layer may be disposed to at least partially surround the light emitting diode when viewed from above the light emitting diode.

[0007] The cover layer may be disposed between the light emitting diode and the conductive pattern layer such that the cover layer at least partially overlaps the light emitting diode.

[0008] According to one embodiment, the cover layer may be at least partially disposed directly below the light emitting diode when viewed from above the light emitting diode.

[0009] The cover layer can be arranged so that at least a portion faces a bottom surface of the light-emitting diode, and the cover layer can be arranged between the light-emitting diode and the conductive pattern layer so that at least a portion of the cover layer overlaps the light-emitting diode.

[0010] According to one embodiment, the light emitting diode module can include a solder disposed on the conductive pattern layer.

[0011] The solder may have one side connected to the light emitting diode element and the other side connected to the conductive pattern layer. The solder may have a thickness in a vertical direction, and may have a thickness of 100 μm or less. A plurality of the solders may be provided, and the plurality of solders may be disposed spaced apart from each other.

[0012] According to one embodiment, the cover layer comprises at least one through hole.

[0013] According to one embodiment, the conductive pattern layer includes at least one through hole.

[0014] Also, a light-emitting diode module can be provided in which the light-emitting diode includes a light-transmitting layer, a light-emitting structure disposed on the light-transmitting layer, and an electrode layer electrically connected to the conductive pattern layer, the light-emitting structure includes a first conductive type semiconductor layer, a second conductive type semiconductor layer located on the first conductive type semiconductor layer, and an active layer located between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and the cover layer is disposed so as to have an area at least partially overlapping between the light-transmitting layer and the electrode layer when viewed from above the light-emitting diode.

[0015] Also, a light emitting diode module can be provided in which the cover layer has a thickness of 20 μm or more and 100 μm or less. Also, a light emitting diode module can be provided in which the cover layer includes a first cover portion and a second cover portion forming a step with the first cover portion, and the electrode layer is disposed so as not to overlap with the first cover portion when viewed from above.

[0016] Also, a light emitting diode module can be provided in which the cover layer is arranged to have an area in which at least a portion of the cover layer overlaps between the light transmitting layer and the first conductive type semiconductor layer when viewed from above the light emitting diode.

[0017] In addition, a light emitting diode module may be provided in which the first cover part has a lower roughness of a portion of the upper surface thereof that does not overlap with the second cover part than a roughness of a lower surface thereof.

[0018] Also, a light emitting diode module may be provided in which at least one of the first cover portion and the second cover portion includes a reflective material to reflect light emitted from the light emitting diode.

[0019] Also, a light emitting diode module may be provided in which the cover layer has at least a portion of an edge that has a curved shape.

[0020] Also, a light emitting diode module may be provided in which the second cover part is disposed on the first cover part, and the first cover part and the second cover part have different thicknesses.

[0021] Also, a light emitting diode module may be provided in which an overlapping area between the first cover part and the light emitting diode is smaller than an overlapping area between the second cover part and the light emitting diode.

[0022] In addition, a light emitting diode module can be provided in which the overlapping region of the second cover part can be located in a region between an outer periphery of the light transmitting layer of the light emitting diode and the electrode layer, and the outer periphery of the overlapping region of the second cover part is disposed adjacent to an edge of the electrode layer.

[0023] Also, a light emitting diode module can be provided, further including solder disposed between the electrode layer and the conductive pattern layer to fix the light emitting diode to the conductive pattern layer, the first cover portion having a through hole exposing the conductive pattern layer to the light emitting diode, and at least a portion of the solder disposed within the through hole.

[0024] Also, a light emitting diode module may be provided in which the solder has a first solder side and a second solder side formed on opposite sides, the first solder side and the second solder side being inclined with respect to the conductive pattern layer such that the angles that the first solder side and the second solder side make with the conductive pattern layer are different from each other.

[0025] Also, a light emitting diode module may be provided in which the solder has a first solder side and a second solder side formed on opposite sides, the first solder side and the second solder side being curved to have different curvatures.

[0026] In addition, a light-emitting diode module can be provided in which the conductive pattern layer has a through hole having a width smaller than that of the through hole at a position corresponding to the through hole, and at least a portion of the solder is disposed within the through hole.

[0027] Also, a light emitting diode module can be provided, in which the light emitting diode includes an electrode layer for electrically connecting with the conductive pattern layer, the conductive pattern layer including a first conductive layer and a second conductive layer disposed on top of the first conductive layer, and the electrode layer is disposed on the second conductive layer.

[0028] Also, a light emitting diode module can be provided in which the cover layer is disposed on the first conductive layer so as not to overlap the second conductive layer when viewed from above.

[0029] Also, a light-emitting diode module can be provided, in which the light-emitting diode includes an electrode layer for electrically connecting with the conductive pattern layer, the conductive pattern layer includes a first conductive portion and a second conductive portion integrally formed with the first conductive portion and extending upward from an upper surface of the first conductive portion, and the electrode layer is disposed on the second conductive portion.

[0030] Also, a light emitting diode module can be provided in which the cover layer is disposed on the first conductive portion so as not to overlap the second conductive portion when viewed from above.

[0031] Also, a light emitting diode module may be provided in which, when viewed from above, a ratio of an area of ​​an overlapping portion of the light emitting diode and the cover layer to an area of ​​the light emitting diode is 2% or more and 8% or less.

[0032] Also, a light emitting diode module may be provided in which the cover layer includes a photo solder resist (PSR), the PSR including at least one of epoxy, silicon, acrylate, and barium sulfate.

[0033] Also provided is a display device including: a frame; a light emitting diode module disposed on an upper portion of the frame; an optical unit disposed on an upper portion of the frame; and a power supply unit that supplies power to the light emitting diode module; the light emitting diode module including a light emitting diode capable of emitting light; a conductive pattern layer electrically connected to the light emitting diode; and an electrically insulated cover layer disposed on the conductive pattern layer, the cover layer being disposed between the light emitting diode and the conductive pattern layer such that at least a portion of the cover layer is located directly below the light emitting diode.

[0034] Also provided is a display device including: a frame; a light emitting diode module disposed on an upper portion of the frame; an optical unit disposed on an upper portion of the frame; and a power supply unit that supplies power to the light emitting diode module; the light emitting diode module including a light emitting diode capable of emitting light; a conductive pattern layer electrically connected to the light emitting diode; and an electrically insulated cover layer disposed on the conductive pattern layer, the cover layer being disposed between the light emitting diode and the conductive pattern layer such that the cover layer has an area at least partially overlapping with the light emitting diode. Effect of the Invention

[0035] The embodiment of the present invention has an advantage that the distance between the light emitting diode and the circuit board is minimized, so that the light emitting diode can be fixed at a precise position on the circuit board. [Brief description of the drawings]

[0036] [Figure 1] FIG. 1 is a diagram showing a light emitting diode module according to a first embodiment of the present invention. [Diagram 2] FIG. 2 is a diagram showing the light emitting diode module of FIG. 1 further including solder. [Diagram 3] FIG. 3 is a plan view of the light-emitting diode module shown in FIG. [Figure 4] FIG. 4 is an enlarged view of part A in FIG. [Diagram 5] FIG. 5 is an enlarged view of part B in FIG. [Figure 6] FIG. 6 is an enlarged view of a modified example of part B in FIG. [Figure 7] FIG. 7 is an enlarged view of part B in FIG. 2 according to another modified example. [Figure 8] FIG. 8 is an enlarged view of part B in FIG. 2 according to still another modified example. [Figure 9] FIG. 9 is an enlarged view of part B in FIG. 2 according to still another modified example. [Figure 10]FIG. 10 is a diagram showing a light emitting diode module according to a second embodiment of the present invention. [Figure 11] FIG. 11 is a diagram showing a light emitting diode module according to a third embodiment of the present invention. [Figure 12] FIG. 12 is a diagram showing the light emitting diode module of FIG. 11 further including solder. [Figure 13] FIG. 13 is a diagram showing a light emitting diode module according to a fourth embodiment of the present invention. [Figure 14] FIG. 14 is a diagram showing the light emitting diode module of FIG. 13 further including solder. [Figure 15] FIG. 15 is a plan view of the first metal mask for applying solder. [Figure 16] FIG. 16 is a plan view of the second metal mask for applying solder. [Figure 17] FIG. 17 is an X-ray diagram of the upper surface of a substrate to which a light-emitting diode is bonded after solder is applied using a first metal mask in the light-emitting diode module according to the first embodiment. [Figure 18] FIG. 18 is an X-ray diagram of the upper surface of a substrate to which a light-emitting diode is bonded after solder is applied using a second metal mask in the light-emitting diode module according to the first embodiment. [Figure 19] FIG. 19 is a plan view showing an example of the display device according to the first to fourth embodiments of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0037] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments for embodying the technical concept of the present invention will be described in detail with reference to the accompanying drawings.

[0038] In the description of the present invention, if it is determined that a specific description of related publicly known configurations or functions may obscure the gist of the present invention, the detailed description will be omitted.

[0039] Furthermore, when a component is referred to as being "in contact with" or "supported by" another component, it should be understood that the component may be in direct contact with or supported by the other component, but there may also be other components in between.

[0040] The terms used in this specification are merely used to describe specific embodiments and are not intended to limit the present invention. A singular expression includes a plural expression unless it has a clearly different meaning in the context.

[0041] Furthermore, terms including ordinal numbers such as first, second, etc. may be used to describe various components, but the components are not limited by such terms, and these terms are used only to distinguish one component from another.

[0042] As used herein, the meaning of "comprising" is to embody certain properties, regions, constants, steps, operations, elements, components and / or ingredients, and does not exclude the presence or addition of other certain properties, regions, constants, steps, operations, elements, components and / or groups.

[0043] In addition, it should be made clear in advance that expressions such as top and bottom in this specification are described based on what is shown in the drawings, and may be expressed differently if the orientation of the object is changed.

[0044] Hereinafter, a specific configuration of the light emitting diode module 1 according to the present invention will be described with reference to the drawings. Referring to Fig. 1 and Fig. 2, the light emitting diode module 1 according to the first embodiment of the present invention can emit light by receiving power from an external source. The light emitting diode module 1 can include a light emitting diode 100, a cover layer 200, a conductive pattern layer 300, an insulating layer 400, a substrate 500, and a solder 600.

[0045] The light emitting diode 100 can generate light. For example, the light emitting diode 100 can generate light in the ultraviolet wavelength band and light in the visible wavelength band. Such a light emitting diode 100 can have an elongated rectangular shape having a major axis and a minor axis, and can be a small light emitting diode having a relatively small horizontal cross-sectional area. For example, when the light emitting diode 100 is rectangular, the length in the vertical direction of the light emitting diode 100 can be less than twice the length in the horizontal direction. However, the light emitting diode 100 is not limited thereto, and may have various shapes.

[0046] The light emitting diode 100 may be disposed on the substrate 500 and fixed at a specific position on the substrate 500 by the solder 600. For example, a plurality of light emitting diodes 100 may be provided, and the plurality of light emitting diodes 100 may be disposed on the substrate 500 to have a predetermined pattern. The light emitting diode 100 may be electrically connected to the substrate 500 by the conductive pattern layer 300. Such a light emitting diode 100 may have a thickness of 1 mm. 2 The light emitting diode 100 may have the following size, for example, a size of 480 μm×480 μm to 550 μm×550 μm. The light emitting diode 100 may include a light transmitting layer 110, a light emitting structure 120, an ohmic layer 130, a contact layer 140, an insulating layer 150, a bump layer 160, and an electrode layer 170. If necessary, the ohmic layer 130 and the contact layer 140 may be integrally formed.

[0047] The light-transmitting layer 110 may be an insulating or conductive substrate. The light-transmitting layer 110 may be a growth substrate for growing the light-emitting structure 120, and may include, for example, a sapphire substrate, a silicon carbide substrate, a silicon substrate, a gallium nitride substrate, an aluminum nitride substrate, etc. Such a light-transmitting layer 110 may have a light incident surface 111 and a light exit surface 112.

[0048] The light incident surface 111 may be one surface facing the light emitting structure 120 among both surfaces of the light transmitting layer 110, and may be a surface where light is incident from the light emitting structure 120 to the light transmitting layer 110. The light incident surface 111 may be a flat surface, but is not limited thereto. For example, the light transmitting layer 110 may have an uneven pattern in at least a part of the light incident surface 111 facing the light emitting structure 120. The uneven pattern formed on the light transmitting layer 110 may include a plurality of protrusions, and the plurality of protrusions may be formed in a regular or irregular pattern. In addition, some of the plurality of protrusions on the lower surface of the light transmitting layer 110 may be located between the light emitting structure 120 and the light transmitting layer 110. Such a plurality of protrusions may improve the extraction efficiency of light emitted from the light emitting structure 120.

[0049] In addition, the light exit surface 112 may be a surface on the opposite side of the light transmission layer 110 from the light incident surface 111, from which light is exited. Such a light transmission layer 110 may include an anti-reflection region on the light exit surface 112. In addition, an anti-glare layer may be included on the light exit surface 112 of the light transmission layer 110. For example, the light transmission layer 110 may have a thickness of 30 μm to 300 μm, but is not limited thereto. Furthermore, the light transmission layer 110 of the present invention may play the role of a transparent substrate, and when applied to a transparent display, the light transmission layer 110 may also include a circuit for electrical connection with the light emitting structure 120.

[0050] Meanwhile, the side of the light-transmitting layer 110 has a plurality of side surfaces extending from the upper surface to the lower surface of the light-transmitting layer 110 at any angle. At least two of the plurality of side surfaces may extend from the lower surface or the upper surface of the light-transmitting layer 110 at different angles. Furthermore, at least one side of the light-transmitting layer 110 may include an area having different inclination angles between the upper and lower portions, and the light-transmitting layer 110 may include a rough surface on the side. By forming an inclined surface or a rough surface on one side of the light-transmitting layer 110, the luminous efficiency of the light emitted from the light-emitting structure 120 can be improved.

[0051] The light emitting structure 120 can generate light. The light emitting structure 120 is located on the light transmitting layer 110. The light emitting structure 120 may have a rectangular shape having a long axis and a short axis like the light transmitting layer 110, but is not limited thereto, and may have various shapes. The total thickness of the light emitting structure 120 may be within a range of 1 to 10 μm. The area of ​​the upper surface of the light emitting structure 120 is smaller than the area of ​​the lower surface of the light transmitting layer 110, and the lower surface of the light transmitting layer 110 may be exposed along the periphery of the light emitting structure 120. The lower surface of the light transmitting layer 110 may be exposed with the same width from both sides of the light emitting structure 120, but is not necessarily limited thereto. For example, the width of the lower surface of the light transmitting layer 110 exposed in one side direction may be within a range of 6:1 to 10:1 with respect to the length of the light transmitting layer 110 in the one side direction. In other words, the ratio of the width of the light transmitting layer 110 exposed in the vertical direction to the vertical length of the light transmitting layer 110 may be about 1 / 10 to about 1 / 6, and the ratio of the width of the light transmitting layer 110 exposed in the horizontal direction to the horizontal length of the light transmitting layer 110 may also be about 1 / 10 to about 1 / 6.

[0052] The light emitting structure 120 may include a first conductive type semiconductor layer 121, a second conductive type semiconductor layer 122 located on the first conductive type semiconductor layer 121, and an active layer 123 located between the first conductive type semiconductor layer 121 and the second conductive type semiconductor layer 122.

[0053] The first conductive type semiconductor layer 121 may have an inclined side surface. The inclination angle of the inclined side surface of the first conductive type semiconductor layer 121 may be gentle, about 60 degrees or less, with respect to the lower surface of the light transmitting layer 110. In this case, by forming the side surface of the first conductive type semiconductor layer 121 gently, it is possible to prevent defects such as cracks from occurring in the first insulating reflective layer covering the light emitting structure 120 and the light transmitting layer 110. In addition, the second conductive type semiconductor layer 122 may be disposed on the first conductive type semiconductor layer 121. Meanwhile, the first conductive type semiconductor layer 121 may contain n-type impurities (e.g., Si, Ge, Sn, Te), and the second conductive type semiconductor layer 122 may contain p-type impurities (e.g., Mg, Sr, Ba). For example, the first conductive type semiconductor layer 121 may include GaN, AlGaN, GaAs, GaP, InGaP, GaAlP, InAlP, or InGaAlP containing Si as a dopant, and the second conductive type semiconductor layer 122 may include GaN, AlGaN, GaAs, GaP, InGaP, GaAlP, InAlP, or InGaAlP containing Mg as a dopant. In this case, in this embodiment, the first conductive type semiconductor layer 121 may be an n-type semiconductor layer, and the second conductive type semiconductor layer 122 may be a p-type semiconductor layer. However, this is merely an example, and the first conductive type semiconductor layer 121 may include p-type impurities, and the second conductive type semiconductor layer 122 may include n-type impurities. In addition, the first conductive type semiconductor layer 121 is shown as a single layer in the drawings, but this is merely an example, and the first conductive type semiconductor layer 121 may be configured as a multilayer, or may include a superlattice layer.

[0054] The active layer 123 may have a multiple quantum well structure (MQW) including a well layer and a barrier layer, and the composition ratio or band gap energy of the well layer may be adjusted to emit a desired wavelength. For example, the active layer 123 may emit red light, green light, blue light, or ultraviolet light depending on the semiconductor materials constituting the layers and their composition ratios. Such an active layer 123 may be located between the first conductive type semiconductor layer 121 and the second conductive type semiconductor layer 122.

[0055] The first conductive type semiconductor layer 121, the second conductive type semiconductor layer 122, and the active layer 123 may include a III-V based semiconductor, for example, a nitride based semiconductor such as (Al, Ga, In).

[0056] Meanwhile, the light emitting structure 120 may include a mesa M including a second conductive type semiconductor layer 122 and an active layer 123. In other words, the second conductive type semiconductor layer 122 and the active layer 123 included in the light emitting structure 120 may form a mesa M. Also, the mesa M may further include at least a part of the first conductive type semiconductor layer 121. Such a mesa M may be located on a part of the first conductive type semiconductor layer 121, and the mesa M may have a thickness in the range of about 1 to 2 μm. In this embodiment, a part of the first conductive type semiconductor layer 121 may be exposed outside the mesa M. Also, in a part of the region, the inclined surface of the mesa M is aligned with the inclined surface of the first conductive type semiconductor layer 121, and thus, the exposed surface of the upper surface of the first conductive type semiconductor layer 121 may be limited to one side of the mesa M. However, this embodiment is not limited thereto, and the lower surface of the first conductive type semiconductor layer 121 may be exposed along the periphery of the mesa M. In another embodiment, a through hole or a groove may be formed inside the mesa M to expose the first conductive type semiconductor layer 121.

[0057] The mesa M may have a rectangular shape with a portion removed to expose the first conductive type semiconductor layer 121. Furthermore, the mesa M may have an inclined side surface, and the inclination angle of the side surface may be gentle, about 45 degrees or less, with respect to the bottom surface of the light transmitting layer 110. Furthermore, when the side surface of the first conductive type semiconductor layer 121 and the mesa M are aligned, the first conductive type semiconductor layer 121 and the mesa M may form the same inclined surface. Such a light emitting structure 120 may be formed by sequentially growing the first conductive type semiconductor layer 121, the active layer 123, and the second conductive type semiconductor layer 122 on the light transmitting layer 110, forming the mesa M by an etching process, and then patterning the first conductive type semiconductor layer 121 to expose the light transmitting layer 110. Such a first conductive type semiconductor layer 121 and the mesa M may be divided into a region where they overlap each other and a region where the first conductive type semiconductor layer 121 and the mesa M do not overlap when viewed from the top and bottom. In this case, light can be emitted from a region where the first conductive type semiconductor layer 121 does not overlap with the mesa M. For example, the region where the first conductive type semiconductor layer 121 and the mesa M overlap can be larger than the region where the first conductive type semiconductor layer 121 and the mesa M do not overlap.

[0058] The ohmic layer 130 may be in ohmic contact with the first conductive type semiconductor layer 121 or the second conductive type semiconductor layer 122. The ohmic layer 130 may be disposed on the second conductive type semiconductor layer 122. The ohmic layer 130 may be formed as a single layer or a multilayer, and may be formed as a transparent electrode. For example, the transparent electrode of the ohmic layer 130 may include a light-transmitting conductive oxide layer such as ITO (Indium Tin Oxide), ZnO (Zinc Oxide), ZITO (Zinc Indium Tin Oxide), ZIO (Zinc Indium Oxide), ZTO (Zinc Tin Oxide), GITO (Gallium Indium Tin Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide), AZO (Aluminum doped Zinc Oxide), FTO (Fluorine Tin Oxide), etc. The conductive oxide may include various dopants.

[0059] The transparent electrode of the ohmic layer 130 containing such a light-transmitting conductive oxide has excellent ohmic contact characteristics with the second conductive type semiconductor layer 122. That is, conductive oxides such as ITO and ZnO have a relatively low contact resistance with the second conductive type semiconductor layer 122 compared to a metallic electrode, and the use of a transparent electrode containing a conductive oxide can reduce the forward voltage Vf of the light-emitting diode 100 and improve the light-emitting efficiency. When the size of the light-emitting diode 100 is reduced, the current density is relatively low, which is greatly affected by the ohmic characteristics. Therefore, the light-emitting efficiency can be more effectively improved by improving the ohmic characteristics using a transparent electrode.

[0060] In addition, the conductive oxide is less likely to peel off from the nitride-based semiconductor layer compared to a metallic electrode, and is stable even when used for a long time. Therefore, the use of a transparent electrode including a conductive oxide can improve the reliability of the light-emitting diode chip. The thickness of the transparent electrode is not limited, but may be within a range of about 400 Å to 3000 Å. If the transparent electrode is too thick, it may absorb light passing through the transparent electrode, causing loss. Therefore, the thickness of the transparent electrode is limited to 3000 Å or less. The transparent electrode is formed to cover substantially the entire upper surface of the second conductive type semiconductor layer 122, thereby improving the current spreading efficiency when the light-emitting diode 100 is operated. For example, the side of the transparent electrode may be formed along the side of the mesa M. The transparent electrode may be formed on the second conductive type semiconductor layer 122 after the light-emitting structure 120 is formed, or may be formed on the second conductive type semiconductor layer 122 in advance before mesa etching.

[0061] The contact layer 140 may be electrically connected to the ohmic layer 130 and the bump layer 160. The contact layer 140 may include a first contact pad 140a and a second contact pad 140b.

[0062] The first contact pad 140a may be electrically connected to the first conductive type semiconductor layer 121 and a first bump pad 160a described below. The first contact pad 140a may be in ohmic contact with a region of the first conductive type semiconductor layer 121 that does not overlap with the mesa M. The first contact pad 140a may include an ohmic metal layer that is in ohmic contact with the first conductive type semiconductor layer 121. The first contact pad 140a may be disposed so as not to overlap with the second conductive type semiconductor layer 122 and the active layer 123. In this case, the insulating layer 150 for insulating the first contact pad 140a from the second conductive type semiconductor layer 122 may be omitted. Meanwhile, the first contact pad 140a may be separated from the mesa M in the horizontal direction by a sufficient distance, and the separation distance may be greater than the thickness of the insulating layer 150. However, if the separation distance of the first contact pads 140a is too large, the light emitting area will be reduced, so the separation distance may be smaller than the diameter of the first contact pads 140a.

[0063] The second contact pad 140b may be electrically connected to the ohmic layer 130 and a second bump pad 160b, which will be described later. The second contact pad 140b may be electrically connected to the ohmic layer 130. Also, the second contact pad 140b may be spaced apart from the first contact pad 140a. Also, the second contact pad 140b may be formed on the mesa M to which the ohmic layer 130 is connected, for example, by using a lift-off process.

[0064] The insulating layer 150 may cover at least a portion of the first conductive type semiconductor layer 121, the active layer 123, the second conductive type semiconductor layer 122, the first contact pad 140a, and the second contact pad 140b. Such an insulating layer 150 covers the lower region and side surfaces of the mesa M, and covers the first conductive type semiconductor layer 121 and the side surfaces of the first conductive type semiconductor layer 121 exposed around the mesa M. In addition, the insulating layer 150 covers at least a portion of the lower surface of the light transmitting layer 110 exposed around the first conductive type semiconductor layer 121, and covers the region between the contact layer 140 and the mesa M.

[0065] In one embodiment of the present invention, the insulating layer 150 may be formed to cover almost the entire surface except for a portion of the second contact pad 140b and a portion of the first contact pad 140a. The insulating layer 150 may have a plurality of openings 150a, 150b, each of which may have a size smaller than the area of ​​the contact layer 140 and may be located confined on the contact layer 140. That is, the insulating layer 150 may have a first opening 150a and a second opening 150b exposing the first contact pad 140a and the second contact pad 140b. The first opening 150a and the second opening 150b of the insulating layer 150 may have different widths. The first opening 150a and the second opening 150b of the insulating layer 150 may have different areas. In addition, the first opening 150a and the second opening 150b of the insulating layer 150 may have different shapes. The width of the first opening 150a of the insulating layer 150 may be greater than the distance between the first contact pad 140a and the adjacent mesa M in the horizontal direction. Also, the insulating layer 150 may be formed to a different thickness than the first contact pad 140a or the second contact pad 140b. For example, the insulating layer 150 may be formed to be thicker than the first contact pad 140a or the second contact pad 140b, and may have a thickness 1.2 times or more that of the first contact pad 140a or the second contact pad 140b.

[0066] The insulating layer 150 includes a distributed Bragg reflector. The distributed Bragg reflector may be formed by repeatedly stacking dielectric layers having different refractive indices, and the dielectric layers may include one or more of TiO2, SiO2, HfO2, ZrO2, Nb2O5, and MgF2. For example, the insulating layer 150 may have a structure of TiO2 layers / SiO2 layers stacked alternately. The distributed Bragg reflector is made to reflect light generated in the active layer 123, and is formed in a plurality of pairs to improve reflectivity. In this embodiment, the distributed Bragg reflector may include 10 to 25 pairs. The insulating layer 150 may include an additional insulating layer 150 together with the distributed Bragg reflector, and may include, for example, an interface layer located under the distributed Bragg reflector and a protective layer covering the distributed Bragg reflector to improve adhesion between the distributed Bragg reflector and its underlying layer. The interface layer may be formed of, for example, a SiO2 layer, and the protective layer may be formed of SiO2 or SiNx.

[0067] The insulating layer 150 may have a thickness of about 2 μm to 5 μm. The distributed Bragg reflector may have a reflectance of 90% or more for light generated in the active layer 123, and a reflectance close to 100% may be provided by controlling the type, thickness, lamination period, etc. of the multiple dielectric layers forming the distributed Bragg reflector. Furthermore, the distributed Bragg reflector may have a high reflectance for visible light other than the light generated in the active layer 123.

[0068] The bump layer 160 may be disposed on the contact layer 140. The bump layer 160 may include a first bump pad 160a and a second bump pad 160b.

[0069] The first bump pad 160a may contact the first contact pad 140a through the first opening 150a, and the second bump pad 140b may contact the second contact pad 140b through the second opening 150b. The first bump pad 160a and the second bump pad 160b may be spaced apart from each other by a certain distance or more on the mesa M. The distance between the first bump pad 160a and the second bump pad 160b is an example and may be 1.5 μm to 100 μm. The first bump pad 160a and the second bump pad 160b may be formed together from the same material in the same process and may have the same layer structure. For example, the first bump pad 160a and the second bump pad 160b may include a conductive material.

[0070] The electrode layer 170 may be provided to transmit a current to the bump layer 1160 and may be electrically connected to the conductive pattern layer 300. Furthermore, the electrode layer 170 may be connected to a solder 600, and may be bonded to a specific position on the substrate 500 by the solder 600. The electrode layer 170 may have a thickness of 5 μm or less, for example. In this case, the thickness of the electrode layer 170 may be formed to be smaller than the thickness of the insulating layer 150. Also, the electrode layer 170 may have a thickness smaller than or equal to the thickness of the first cover part 210 described below. Also, a predetermined gap G may be formed between the electrode layer 170 and the conductive pattern layer 300 in the vertical direction. Also, a plurality of electrode layers 170 may be provided, and the plurality of electrode layers 170 may include a first electrode pad 170a and a second electrode pad 170b.

[0071] The first electrode pad 170a and the second electrode pad 170b may be supported by the bump layer 160 to be spaced apart in the horizontal direction. The first electrode pad 170a and the second electrode pad 170b may be connected to the first bump pad 160a and the second bump pad 160b, respectively. For example, the first electrode pad 170a and the second electrode pad 170b may have different poles from each other. In addition, the first electrode pad 170a and the second electrode pad 170b may be connected to the conductive pattern layer 300 by the solder 600, respectively.

[0072] Although the light emitting diode 100 according to the first embodiment of the present invention has been described, the light emitting diode 100 may further include layers having additional functions in addition to the layers described. For example, various layers may be included in the light emitting diode 100, such as a reflective layer (not shown) that reflects light, an additional insulating layer (not shown) for insulating certain components, and a solder diffusion prevention layer (not shown) that prevents the diffusion of solder.

[0073] 2 and 3, the cover layer 200 may be electrically insulated and may reflect light emitted from the light emitting diode 100. The cover layer 200 may be a light reflecting layer capable of reflecting light emitted from the light emitting diode 100. The cover layer 200 may be a light diffusing layer capable of diffusing light emitted from the light emitting diode 100. Such a cover layer 200 may be disposed on the conductive pattern layer 300 so as to be located between the conductive pattern layer 300 and the light emitting diode 100 in the vertical direction. The cover layer 200 may be provided so as to surround the light emitting diode 100 when viewed from above the light emitting diode 100, and may be disposed so as to overlap at least a portion of the cover layer 200 with the light emitting diode 100. In other words, the cover layer 200 may be disposed so as to be at least partially located directly below the light emitting diode 100. In this case, at least a portion of the cover layer 200 may face the bottom surface of the light emitting diode 100.

[0074] The cover layer 200 may have an overlapping region in a region between the outer periphery of the light transmitting layer 110 of the light emitting diode 100 and the outer periphery of the first conductive type semiconductor layer 121. The cover layer 200 may also have an overlapping region in a region adjacent to the electrode layer 170 of the light emitting diode 100. The cover layer 200 may also have an overlapping region in a region between the light transmitting layer 110 of the light emitting diode 100 and the electrode layer 170, and the overlapping outer periphery of the cover layer 200 may be disposed so as to be located adjacent to an end of the electrode layer 170. In this case, the outer periphery of the cover layer 200 may be horizontally spaced apart from the electrode layer 170. For example, when the cover layer 200 is viewed from above, the ratio of an area S of the overlapping portion of the light emitting diode 100 and the cover layer 200 to the area of ​​the light emitting diode 100 may be 1% or more and 15% or less, specifically, 2% or more and 8% or less.

[0075] Also, the cover layer 200 may include, for example, a photo solder resist (PSR), which may include one or more of epoxy, silicon, acrylate, and barium sulfate. However, this is merely an example, and the cover layer 200 may use any known material as long as it is electrically insulated and can reflect light. Also, the cover layer 200 may have a thickness of 20 μm or more and 100 μm or less. Such a cover layer 200 may include a first cover portion 210 and a second cover portion 220.

[0076] Referring to FIG. 4, the first cover part 210 may be disposed on the conductive pattern layer 300. After the first cover part 210 is applied to the conductive pattern layer 300, the conductive pattern layer 300 may be exposed through an exposure and development process. The conductive pattern layer 300 exposed by the first cover part 210 may be electrically connected to the electrode layer 170. The first cover part 210 may be disposed such that at least a portion of the first cover part 210 overlaps with the light emitting diode 100 when viewed from above the light emitting diode 100. For example, at least a portion of the first cover part 210 may be disposed below the light emitting diode 100, and one end of the light emitting diode 100 and the other end opposite the other end of the light emitting diode 100 may overlap the first cover part 210. In addition, the first cover part 210 may be separated from the electrode layer 170 by a predetermined distance d1 in the horizontal direction. However, this is merely an example, and the first cover part 210 may contact the electrode layer 170. In addition, the first cover portion 210 may be spaced apart from the light transmitting layer 110 in the vertical direction by a predetermined distance d2. In other words, the first cover portion 210 may be spaced apart from the light transmitting layer 110 downward.

[0077] The first cover part 210 may be formed so that the roughness of the upper surface and the lower surface are different. For example, the roughness of the upper surface of the first cover part 210 that does not overlap with the second cover part 220 may be smaller than the roughness of the lower surface facing the conductive pattern layer 300. Also, the first cover part 210 may have a thickness smaller than or equal to the thickness of the second cover part 220. The cover layer 200 may have a thickness equal to or larger than the electrode layer 170. A gap G may be formed between the electrode layer 170 and the conductive pattern layer 300 depending on the thickness of the first cover part 210 of the cover layer 200, and the smaller the difference between the thickness of the first cover part 210 and the thickness of the electrode layer 170, the smaller the gap G may be.

[0078] Meanwhile, the first cover part 210 may be formed with a through hole 211 that exposes the conductive pattern layer 300 toward the light emitting diode 100. For example, the conductive pattern layer 300 exposed from the through hole 211 may be electrically connected to the electrode layer 170 by the solder 600. Such a through hole 211 may be formed in the center of the first cover part 210. For example, the width of the through hole 211 may be 150 μm or more and 1000 μm or less, and may have an area of ​​80% or less with respect to the area of ​​the light emitting diode 100. In addition, the electrode layer 170 may be disposed inside the through hole 211 or directly above the through hole 211, and the solder 600 may be disposed in the through hole 211. In this case, the first cover part 210 may prevent the solder 600 from spreading. In other words, when the solder 600 is disposed in the through hole 211, the first cover part 210 may support the side of the solder 600. In this case, the solder 600 does not spread, and can stably bond the electrode layer 170 and the conductive pattern layer 300. In other words, the first cover part 210 can have an insulating property and a property of preventing the solder 600 from spreading at the same time.

[0079] Referring again to FIG. 2, the second cover part 220 may be disposed on the first cover part 210. Also, the second cover part 220 may be arranged so as not to overlap with the light emitting diode 100 when viewed from above the light emitting diode 100. Such a second cover part 220 may have a thickness equal to or greater than that of the first cover part 210. For example, the second cover part 220 may have a thickness of 10 μm or more and 90 μm or less, and the first cover part 210 may have a thickness of 10 μm or more and 50 μm or less. The ratio of the thickness of the second cover part 220 to the first cover part 210 may be 0.5 or more and 9 or less.

[0080] The second cover part 220 may be formed integrally with the first cover part 210. For example, the second cover part 220 may include the same material as the first cover part 210. In this case, a boundary may not be formed between the second cover part 220 and the first cover part 210. However, this is merely an example, and the second cover part 220 may further include a material different from that of the first cover part 210. In this case, a boundary may be formed between the second cover part 220 and the first cover part 210, and an adhesive layer (not shown) for increasing the adhesive strength between the first cover part 210 and the second cover part 220 may be formed in the boundary area.

[0081] Such a second cover part 220 may form a step 230 with the first cover part 210. For example, the second cover part 220 may be formed in an area that does not overlap with the light emitting diode 100 when viewed from above with the first cover part 210 still formed. Also, a step may be formed by the thickness of the second cover part 220, and a part of the first cover part 210 may be exposed to the upper side. In this case, the light transmission layer 110 may be disposed on the exposed first cover part 210.

[0082] In addition, the gap G formed between the electrode layer 170 and the conductive pattern layer 300 can be minimized due to the step formed between the second cover part 220 and the first cover part 210. That is, when a step is formed between the second cover part 220 and the first cover part 210, the gap G can be reduced by the thickness of the second cover part 220 compared to the gap G when no step is formed between the second cover part 220 and the first cover part 210. In this case, the gap G between the electrode layer 170 and the conductive pattern layer 300 is reduced, and the amount of solder 600 is also reduced. In addition, the reduction in the amount of solder increases the probability that the light emitting diode 100 is fixed at an accurate position on the substrate 500, reducing the defective rate and minimizing the solder cost. In addition, the reliability of the light emitting diode can be improved by minimizing the amount of solder according to the miniaturization of the light emitting diode 100 and the electrode layer 170 of the light emitting diode 100.

[0083] Meanwhile, the gap G may occur due to a difference in thickness between the first cover part 210 and the electrode layer 170. For example, when the thicknesses of the first cover part 210 and the electrode layer 170 are equal, the gap G does not occur. In order to prevent a decrease in the reflectance of the cover layer 200 and ensure the thickness of the cover layer 200, the thickness of the cover layer 200 may be thicker than the thickness of the electrode layer 170, but is not limited thereto. That is, the thickness of the first cover part 210 can be adjusted within a range in which the reflectance of the cover layer 200 can be ensured. When the thicknesses of the first cover part 210 and the electrode layer 170 are the same or similar, the gap G between the electrode layer 170 and the cover layer 200 may be minimized.

[0084] Meanwhile, at least a part of the end of the first cover part 210 and the second cover part 220 may have a curved shape. For example, at least a part of the end of the first cover part 210 and the second cover part 220 may have a rounded shape and may have a curvature of 10 or more. Also, at least a part of the end of the first cover part 210 and the second cover part 220 may have a different shape from each other and may have a round shape with a different curvature from each other. However, this is merely an example, and the end of the first cover part 210 and the second cover part 220 may be formed to form an angle. Also, the end of the first cover part 210 and the second cover part 220 may be formed to form a different angle from each other.

[0085] In addition, one or more of the first cover part 210 and the second cover part 220 may include a reflective material so as to reflect the light irradiated from the light emitting diode 100. For example, one or more of the first cover part 210 and the second cover part 220 may include one or more of Al, Ni, Ti, Ag, and Au. In addition, the second cover part 220 may include a reflective material, and the first cover part 210 may not include a reflective material. In this case, the second cover part 220 may reflect the light traveling laterally from the light emitting diode 100 without absorbing it. However, this is merely an example, and both the first cover part 210 and the second cover part 220 may include a reflective material. In this case, the thick part of the cover layer 200 has a higher reflectivity than the thin part of the cover layer 200. In other words, the part where the first cover part 210 and the second cover part 220 overlap has a higher reflectivity than the part where the first cover part 210 and the second cover part 220 do not overlap. In addition, the first cover part 210 can reflect light traveling downward from the light emitting diode 100, and the second cover part 220 can reflect light traveling laterally from the light emitting diode 100. The light reflected by the first cover part 210 and the second cover part 220 has the effect of improving the light efficiency of the light emitting diode module 1.

[0086] 2 and 5, the conductive pattern layer 300 can pass current and can be electrically connected to the light emitting diode 100. Such a conductive pattern layer 300 can be disposed on an insulating layer 400 and configured to form a specific pattern. For example, the conductive pattern layer 300 can include one or more of Ag, Cu, Au, Ca, W, Zn, Ni, Fe, Pt, and Sn. Also, the conductive pattern layer 300 can have a thickness of 10 μm or more and 150 μm or less.

[0087] Meanwhile, the conductive pattern layer 300 may have a through hole 301 formed at a position corresponding to the through hole 211. The through hole 301 may be connected to the through hole 211, and the insulating layer 400 may be exposed toward the light emitting diode 100 through the through hole 301. In other words, the conductive pattern layer 300 may be separated on both sides of the insulating layer 400, and a gap may be formed therebetween. The through hole 301 may be formed to have an overlapping area with the area between the first electrode pad 170a and the second electrode pad 170b. The through hole 301 may have a width of 320 μm or less. A material having a refractive index of 1 or more may be disposed in the through hole 301, and an air gap may also be disposed therein. The through hole 301 and the through hole 211 allow the flux contained in the solder 600 to easily volatilize into the air. In this case, defects caused by residual flux in the solder 600 can be improved, for example, there is an effect of preventing the solder from spreading due to residual flux in the solder 600. In addition, there is an effect of preventing a non-lighting phenomenon caused by residual flux in the solder 600, and improving solderability.

[0088] Here, the flux is a material that is generally mixed with the solder 600 to aid in good soldering. Such a flux can first remove the oxide film on the surface of the naturally oxidized solder 600 and form a coating to prevent reoxidation during the process. In addition, the flux can reduce the surface tension of the solder 600, which has a tendency to maintain a circular shape, and increase the spreading property of the solder 600, thereby preventing the solder 600 from being attracted during the process. For this reason, the flux is mixed with the solder for processing. However, if the flux remains after the process, it can cause problems such as failures such as non-lighting and reduced reliability, so the flux must be volatilized so that it does not remain and does not affect the product characteristics and reliability.

[0089] The insulating layer 400 may be electrically insulating and may be disposed on the substrate 500. For example, the insulating layer 400 may include one or more of silicon-based, acrylic-based, and ceramic-based materials having excellent heat dissipation performance. The insulating layer 400 may have a thickness of 90 μm to 180 μm, but is not limited thereto, and may have a thickness of 50 μm to 500 μm.

[0090] The substrate 500 can support the insulating layer 400. For example, the substrate 500 can form a printed circuit board (PCB) together with the insulating layer 400 and the conductive pattern layer 300. Furthermore, the substrate 500 can include one or more of Cu, Zn, Au, Ni, Al, Mg, Cd, Be, W, Mo, Si, and Fe, or an alloy of some of these. However, this is merely an example, and the substrate 500 can include one or more of FR1, CEM-1, and FR-4. Here, FR1 is a material in which copper foil and laminated paper are laminated, and CEM-1 is a material in which copper foil, glass fiber fabric, laminated paper, and glass fiber fabric are laminated in this order. Also, FR-4 is a material in which copper foil and glass fiber fabric or glass fiber fabric are laminated. Such a substrate 500 can have a thickness of 0.2 mm to 10 mm.

[0091] Referring again to FIG. 2, the solder 600 may fix the light emitting diode 100 in a predetermined position. One side of the solder 600 is connected to the electrode layer 170, and the other side is connected to the conductive pattern layer 300. In this case, the solder 600 may electrically connect the electrode layer 170 and the conductive pattern layer 300. A plurality of such solders 600 may be provided, and the plurality of solders 600 may be connected to the first electrode pad 170a and the second electrode pad 170b, respectively. Also, the plurality of solders 600 may be spaced apart from each other to prevent a short circuit from occurring between the first electrode pad 170a and the second electrode pad 170b. In this case, flux may volatilize in the space between the plurality of solders 600.

[0092] Meanwhile, the solder 600 may have a thickness in the vertical direction, and may be formed to a thickness of 100 μm or less. 2 In the following cases, the solder 600 may have a thickness of 5 μm or more and 50 μm or less. However, this is merely an example and the present invention is not limited thereto. Therefore, the solder 600 may have various thicknesses depending on the size of the light emitting diode 100. Also, the solder 600 may be disposed in the through hole 211, and a side surface of the solder 600 may be partially supported by the first cover part 210.

[0093] Meanwhile, the solder 600 directly contacts the electrode layer 170, so that even a minute change has a large effect on the process failure rate and product characteristics of the product. If the amount of the solder 600 increases with respect to the electrode layer 170, the probability of solder balls occurring increases, which can increase the rate of shorts occurring between the LED chips. In addition, self-alignment during reflow is hindered, which reduces work efficiency, and solder spreadability decreases, which increases the failure rate. The decrease in solder spreadability causes a concave shape in the middle due to the viscous properties of the solder 600 after the electrode layer 170 is bonded to the solder 600. This shape reduces the bonding width at which the LED 100 can be stably bonded to the solder 600, and may cause the LED 100 to tilt and lift. In addition, it increases the probability of cracks occurring in the solder 600 and reduces thermal conductivity, which causes problems with product characteristics and reliability. The molding part 700 can protect the LED 100 and improve the light extraction efficiency of the LED 100. Also, the molding part 700 can encapsulate the light emitting diode 100 and refract the light emitted from the light emitting diode 100. Also, the molding part 700 can be a light-transmitting transparent molding for transmitting the light emitted from the light emitting diode 100, and can be made of a resin including one or more of a silicone-based, an epoxy-based, a PMMA (polymethyl methacrylate)-based, a PE (polyethylene)-based, and a PS (polystyrene)-based resin, for example. Also, the molding part 700 can be made of a fluorine resin for improving the efficiency of the light emitted from the light emitting diode 100.

[0094] Meanwhile, the molding part 700 may include a light diffusing material capable of diffusing light emitted from the light emitting diode 100. For example, the light diffusing material may include one or more of TiO2, BaO, SiO2, MgO, and Y2O3 capable of scattering light, and may be distributed inside the molding part 700. In addition, the molding part 700 may include a wavelength conversion material capable of converting the wavelength of light emitted from the light emitting diode 100. For example, the wavelength conversion material may include a phosphor capable of emitting one or more of red light, blue light, and green light, and may be distributed inside the molding part 700.

[0095] Meanwhile, the solder 600 described above has both sides symmetrical to each other and extending in the vertical direction, but this is merely an example and the present invention is not limited thereto. Therefore, according to a modification of the first embodiment of the present invention, the solder 600 may be provided so that both sides are asymmetrical to each other, or one side may extend in a direction offset from the horizontal direction.

[0096] 6, one side of the solder 600 may extend at an angle with respect to the horizontal direction. The upper and lower surfaces of the solder 600 may be formed to have different widths. The lower surface of the solder 600 may have a width greater than that of the upper surface of the solder. Such a solder 600 may have a first solder side 601 and a second solder side 602 formed on opposite sides. Here, the first solder side 601 may be closer to the through hole 301 than the second solder side 602, and the second solder side 602 may be closer to the first cover part 210 than the first solder side 601.

[0097] The solder 600 may be formed to extend between the light emitting diode 100 and the conductive pattern layer 300 with different angles on both sides. For example, the first solder side 601 may extend at an incline with respect to the conductive pattern layer 300 to have a first angle a1 with respect to the conductive pattern layer 300. For example, the first angle a1 may be 60° or more and 90° or less. The second solder side 602 may extend at an incline with respect to the conductive pattern layer 300 to have a second angle a2 with respect to the conductive pattern layer 300. For example, the second angle a2 may be 30° or more and 70° or less. The first solder side 601 and the second solder side 602 may extend at different first and second angles a1 and a2.

[0098] In addition, the first solder side 601 and the second solder side 602 may be formed to have different lengths. For example, a first length L1, which is the length of the first solder side 601, may be shorter than a second length L2, which is the length of the second solder side 602. Such a second solder side 602 may extend to wrap the side of the electrode layer 170 of the light-emitting diode 100 and contact the insulating layer 150. In this case, the second length L2 may be longer than the first length L1 by the thickness of the electrode layer 170. Furthermore, the width of one or more of the upper and lower surfaces of the solder 600 may be wider than the width of the electrode layer 170.

[0099] Meanwhile, the first solder side surface 601 and the second solder side surface 602 are shown to have a certain inclination, but this is merely an example and the present invention is not limited thereto. Therefore, according to another modification of the first embodiment of the present invention, the side surface of the solder 600 may extend such that one portion and another portion have different inclinations.

[0100] Referring to FIG. 7, the second solder side 602 may extend such that the inclination of a portion is different from the inclination of the other portion. For example, the portion adjacent to the electrode layer 170 may extend in the vertical direction, and the portion adjacent to the conductive pattern layer 300 may extend to have a predetermined curvature. In this case, the width of the solder 600 may change based on the portion where the inclination of the side begins to differ. Also, the second solder side 602 may extend toward the cover layer 200 from the upper surface toward the lower surface. In other words, the second solder side 602 may extend such that the width of the solder 600 increases from the upper surface toward the lower surface. In this case, it is possible to prevent a short circuit from occurring in the light emitting diode 100, and the reliability of the light emitting diode 100 may be improved by increasing the adhesion area between the solder 600 and the electrode layer 170 or between the solder 600 and the conductive pattern layer 300.

[0101] Meanwhile, although the first solder side 601 and the second solder side 602 described above are shown as having straight regions, this is merely an example and the present invention is not limited thereto. Thus, according to yet another variation of the first embodiment of the present invention, at least one of the first solder side 601 and the second solder side 602 of the solder 600 may be curved to have a predetermined curvature.

[0102] 8, the first solder side 601 and the second solder side 602 may be formed to be recessed toward the inside of the solder 600, and the first solder side 601 and the second solder side 602 may be formed to have different curvatures. For example, the radius of curvature R1 of the first solder side 601 may be larger than the radius of curvature of the second solder side 602, and the radius of curvature of the second solder side 602 may be smaller than the radius of curvature of the second solder side 602. In this case, it is possible to prevent a short circuit from occurring in the light emitting diode 100, and the reliability of the light emitting diode 100 may be improved by increasing the adhesion area between the solder 600 and the electrode layer 170 and between the solder 600 and the conductive pattern layer 300.

[0103] Meanwhile, although the above-mentioned solder 600 is illustrated as being disposed on the upper part of the conductive pattern layer 300, this is merely an example and the present invention is not limited thereto. Therefore, according to yet another modification of the first embodiment of the present invention, the solder 600 may be disposed inside the through hole 301 of the conductive pattern layer 300.

[0104] 9, the first solder side 601 may extend from the electrode layer 170 toward the inside of the communication hole 301. Also, at least a portion of the solder 600 may be disposed inside the communication hole 301 and supported by the insulating layer 400. In this case, the adhesion area between the solder 600 and the conductive pattern layer 300 may be increased, thereby improving the reliability of the light emitting diode 100.

[0105] In the light emitting diode module 1 according to the first embodiment of the present invention, the first cover part 210 and the second cover part 220 form a step 230, and the gap G between the electrode layer 170 and the conductive pattern layer 300 is minimized by the height of the step 230. In this case, as the gap G between the electrode layer 170 and the conductive pattern layer 300 is minimized, the spreadability of the solder 600 is improved.

[0106] In addition, the amount of solder 600 is minimized, which prevents the occurrence of solder balls and prevents short circuits between the electrode layers 170 of the light emitting diode 100. When the spreading property of the solder 600 is improved, the contact area with the electrode layer 170 is increased, which allows the electrode layer 170 to be stably bonded to the conductive pattern layer 300 and prevents the occurrence of cracks.

[0107] In addition, the increased contact area between the electrode layer 170 and the solder 600 can prevent the light emitting diode 100 from tilting or lifting, and has the effect of improving thermal conductivity.

[0108] Meanwhile, in addition to the above configuration, according to a second embodiment of the present invention, the cover layer 200 can include a first cover portion 210 and a second cover portion 220. Hereinafter, the second embodiment of the present invention will be described with further reference to Fig. 10. In describing the second embodiment, differences compared to the above-mentioned embodiment will be mainly described, and the same descriptions and reference numerals are used to refer to the above-mentioned embodiment, and the first cover portion 210 and the second cover portion 220 of the second embodiment are the same as the first cover portion 210 and the second cover portion 220 of Fig. 2 except for the shape.

[0109] Referring to FIG. 10, the first cover part 210 may be disposed on the conductive pattern layer 300. The first cover part 210 may have a predetermined thickness, for example, a thickness of 10 μm to 50 μm. The first cover part 210 may be disposed so that at least a portion of the first cover part 210 overlaps with the light emitting diode 100 when viewed from above the light emitting diode 100. For example, at least a portion of the first cover part 210 may be disposed below the light emitting diode 100. Here, the portion of the first cover part 210 disposed below the light emitting diode 100 may be defined as an overlapping region of the first cover part 210. The overlapping region of the first cover part 210 may be smaller than the overlapping region of the second cover part 220 described later. However, this is merely an example, and the first cover part 210 may be disposed on the conductive pattern layer 300 so as not to overlap with the light emitting diode 100 when viewed from above.

[0110] The first cover part 210 may have a first through hole 212 that exposes the conductive pattern layer 300 toward the light emitting diode 100. The first through hole 212 may be formed in the center of the first cover part 210. For example, the width of the first through hole 212 may be 150 μm or more and 1000 μm or less. In addition, the electrode layer 170 may be disposed directly above the first through hole 212, and the solder 600 may be disposed in the first through hole 212.

[0111] The second cover part 220 may be disposed on the first cover part 210. The second cover part 220 may have a thickness equal to or greater than that of the first cover part 210. For example, the second cover part 220 may have a thickness of 10 μm to 50 μm. In addition, the second cover part 220 may be disposed such that at least a portion of the second cover part 220 overlaps with the light emitting diode 100 when viewed from above the light emitting diode 100. For example, at least a portion of the second cover part 220 may be disposed below the light emitting diode 100. Here, the portion of the second cover part 220 disposed below the light emitting diode 100 may be defined as an overlapping region of the second cover part 220. The overlapping region of the second cover part 220 may be located in a region between an outer periphery of the light transmitting layer 110 of the light emitting diode 100 and an outer periphery of the first conductive type semiconductor layer 121. In addition, the overlapping region of the second cover part 220 may be located in a region between the outer edge of the light transmitting layer 110 of the light emitting diode 100 and the electrode layer 170, and the outer edge of the overlapping region of the second cover part 220 may be disposed in a position adjacent to an edge of the electrode layer 170. Such a second cover part 220 may extend such that an outer surface thereof abuts against an outer edge of the molding part 700 while an inner surface thereof forming a second through hole 221 described later is placed under the light emitting diode 100.

[0112] In the second cover part 220, a second through hole 221 exposing the conductive pattern layer 300 toward the light emitting diode 100 may be formed. The second through hole 221 may be formed in the center of the second cover part 220. For example, the width of the second through hole 221 may be 150 μm or more and 800 μm or less, and the width of the second through hole 221 may be smaller than the width of the first through hole 212. In addition, the electrode layer 170 may be disposed inside or directly above the second through hole 221, and the solder 600 may be disposed in the second through hole 221. In this case, the second cover part 220 may prevent the solder 600 from spreading. In other words, when the solder 600 is disposed in the second through hole 221, the second cover part 210 may support the side of the solder 600.

[0113] The conductive pattern layer 300 may support the first cover part 210 and the second cover part 220. A through hole 301 may be formed in the conductive pattern layer 300. The through hole 301 may be connected to the first through hole 212 and the second through hole 221, and the insulating layer 400 may be exposed toward the light emitting diode 100 through the through hole 301.

[0114] Meanwhile, in addition to the above configuration, according to a third embodiment of the present invention, the conductive pattern layer 300 can include a first conductive layer 310 and a second conductive layer 320. Hereinafter, the third embodiment of the present invention will be described with further reference to Figures 11 and 12.

[0115] The first conductive layer 310 may be disposed on the insulating layer 400, and the second conductive layer 320 may be disposed on the first conductive layer 310. The second conductive layer 320 may be electrically connected to the first conductive layer 310. In addition, an electrode layer 170 may be disposed on the second conductive layer 320. The first conductive layer 310 and the second conductive layer 320 may form a conductive layer step 330. For example, the second conductive layer 320 may be formed in a region of the upper surface of the first conductive layer 310 where the cover layer 200 is not formed, when viewed from above with the cover layer 200 formed on the first conductive layer 310.

[0116] For example, the second conductive layer 320 may be formed on the first conductive layer 310 by a surface plating process. More specifically, the second conductive layer 320 may be formed on the first conductive layer 310 by electroplating. Here, electroplating is a surface treatment technique in which a sample (reduction electrode) and an anode (oxidation electrode) are immersed in a plating solution in which metal ions are dissolved, and an overpotential of a certain level or more is applied to induce an electrochemical reduction reaction on the surface of the sample, thereby forming a metal and non-metal coating layer. The second conductive layer 320 may be formed by one or more platings selected from copper plating, chromium plating, gold plating, platinum plating, silver plating, palladium plating, zinc plating, cadmium plating, TIN plating, rhodium plating, silver plating, and nickel plating. However, this is merely an example, and the second conductive layer 320 may form a metal conductor by electroless plating. Also, the size of the second conductive layer 320 may be the same as or larger than the size of the electrode layer 170.

[0117] Meanwhile, the cover layer 200 may be disposed on the first conductive layer 310 so as not to overlap with the second conductive layer 320 when viewed from above. The cover layer 200 may be laminated such that a part of the cover layer 200 is removed when laminated on the conductive pattern layer 300, and the conductive pattern layer 300 is exposed from the removed part. In addition, the conductive pattern layer 300 may be electrically connected to the light emitting diode 100 by the removed part of the cover layer 200. The cover layer 200 may be provided such that the difference between the thickness of the second conductive layer 320 and the thickness of the cover layer 200 is within a predetermined range. For example, the cover layer 200 may be provided to have the same thickness as the second conductive layer 320. In this case, the upper surface of the second conductive layer 320 and the upper surface of the cover layer 200 may form a continuous surface without forming a step. However, this is merely an example, and the cover layer 200 may have a thickness different from that of the second conductive layer 320. In this case, a step may be formed between the cover layer 200 and the second conductive layer 320. In other words, a step may be formed due to a process error during the process of forming the second conductive layer 320. When the cover layer 200 is thicker than the second conductive layer 320, the cover layer 200 can prevent the electrode layer 170 from being detached from the second conductive layer 320. In addition, a step may be formed within a range where no gap is formed between the electrode layer 170 and the second conductive layer 320. The height of such a step may be equal to or less than the thickness of the electrode layer 170 so that the electrode layer 170 is not separated from the second conductive layer 320. In another example, when the step between the cover layer 200 and the second conductive layer 320 is greater than the thickness of the electrode layer 170, the light-transmitting layer 110 is supported by the cover layer 200, and a gap is formed between the electrode layer 170 and the second conductive layer 320. In other words, both edge portions of the light-transmitting layer 110 may overlap the cover layer 200.

[0118] The light emitting diode 100 may be electrically connected to the second conductive layer 320. The light emitting diode 100 may be disposed on the electrode layer 170 and the second conductive layer 320, and may be connected to the electrode layer 170 and the second conductive layer 320. The electrode layer 170 may be provided to have an area equal to or smaller than that of the second conductive layer 320. For example, the light emitting diode 100 may be electrically connected to an external component by a flip chip bonding method. However, this is merely an example, and the light emitting diode 100 may be connected to the solder 600 and the electrode layer 170 by any known technique other than flip chip bonding as long as the method is capable of connecting the light emitting diode 100 to the solder 600 and the electrode layer 170.

[0119] Meanwhile, the solder 600 may be disposed between the second conductive layer 320 and the electrode layer 170. In other words, the solder 600 may be applied only to the second conductive layer 320 by a metal mask operation and process for applying a solder cream that electrically connects the second conductive layer 320 and the electrode layer 170. Such solder 600 may bond the second conductive layer 320 and the electrode layer 170. If such solder 600 is applied without a step between the second conductive layer 320 and the electrode layer 170, the amount of the solder 600 may be easily adjusted, and an increase in the amount of the solder 600 due to the step may be prevented. In addition, since an increase in the amount of the solder 600 may be prevented, the ratio of the amount of the solder 600 to the size of the electrode layer 170 may be optimized, and the thickness of the solder 600 may be formed. In addition, since an increase in the amount of the solder 600 may be prevented, it is useful for reducing costs.

[0120] In addition, the solder 600 may have a thickness in the vertical direction. For example, when the size of the light emitting diode 100 is 500 μm, the solder 600 may have a thickness in the vertical direction. 2In the following cases, the solder 600 may have a thickness of 5 μm or more and 15 μm or less. However, this is merely an example, and the present invention is not limited thereto. Therefore, the thickness of the solder 600 may have various thicknesses depending on the size of the light emitting diode 100. Although the solder 600 according to the third embodiment is illustrated as having a side extending in the up and down direction, this is merely an example, and the present invention is not limited thereto. Therefore, the solder 600 according to the third embodiment may be provided in various forms like the modified example of the first embodiment.

[0121] In this manner, the light emitting diode module 1 according to the third embodiment can minimize the step formed between the cover layer 200 and the second conductive layer 320, thereby minimizing the amount of solder 600 provided between the electrode layer 170 and the second conductive layer 320. In this case, even if the light emitting diode 100 is miniaturized, the amount of solder 600 can be minimized, and the light emitting diode 100 can be bonded to an accurate position on the substrate 500.

[0122] In addition, since the amount of solder 600 is minimized, the occurrence of solder balls can be prevented, and short circuits between the electrode layers 170 of the light emitting diode 100 can be prevented.

[0123] In addition, the efficiency of self-alignment during reflow can be improved, and the solder spreadability can be improved to reduce the defect rate. In addition, by improving the spreadability of the solder 600, the contact areas of the electrode layer 170 and the second conductive layer 320 with the solder 600 are increased, so that the electrode layer 170 can be stably bonded to the conductive pattern layer 300, and the occurrence of cracks can be prevented.

[0124] Furthermore, the increased contact area between the electrode layer 170 and the solder 600 can prevent the light emitting diode 100 from tilting or lifting, improves thermal conductivity, and enhances product characteristics and reliability.

[0125] Meanwhile, as the step between the second conductive layer 320 and the cover layer 200 is minimized, the exposed area of ​​the solder 600 to the outside is increased. In this case, the flux contained in the solder 600 can easily volatilize into the air. In other words, as the exposed area of ​​the solder 600 increases, the paths through which the flux contained in the solder 600 can volatilize can be increased. In addition, defects caused by flux remaining in the solder 600 can be improved, and as an example, there is an effect of preventing the solder from spreading due to flux remaining in the solder 600.

[0126] In addition, it is possible to prevent the non-lighting phenomenon caused by residual flux in the solder 600, and it is possible to improve the solderability.

[0127] Meanwhile, in addition to the above configuration, according to a fourth embodiment of the present invention, the conductive pattern layer 300 may include a first conductive portion 340 and a second conductive portion 350. Hereinafter, the fourth embodiment of the present invention will be described with further reference to Figs. 13 and 14.

[0128] The first conductive part 340 may be disposed on the insulating layer 400, and the second conductive part 350 may be disposed on the first conductive part 340. For example, the second conductive part 350 may extend upward from the upper surface of the first conductive part 340 such that a conductive part step 360 is formed between the first conductive part 340 and the second conductive part 350. The first conductive part 340 and the second conductive part 350 may be electrically connected to each other and may be formed integrally. The second conductive part 350 may be thicker than the first conductive part 340. The cover layer 200 may be laminated on the first conductive part 340. The cover layer 200 laminated on the first conductive part 340 may be formed so as not to form a step with the second conductive part 350, but is not limited thereto. In other words, a slight step may be generated between the second conductive part 350 and the cover layer 200 due to a process error. For example, the step between the cover layer 200 and the second conductive unit 350 may be formed within a range in which no gap occurs between the electrode layer 170 and the conductive pattern layer 300. In addition, the step between the second conductive unit 350 and the cover layer 200 may be the same as or smaller than the thickness of the electrode layer 170. If the step between the second conductive unit 350 and the cover layer 200 is formed to be larger than the thickness of the electrode layer 170, both end portions of the light transmission layer 110 may overlap the cover layer 200, and a gap may be formed between the electrode layer 170 and the second conductive unit 350.

[0129] For example, the step between the second conductive portion 350 and the first conductive portion 340 may be formed by an etching process. In a more detailed example, when the conductive pattern layer 300 is disposed on the insulating layer 400, a portion of the conductive pattern layer 300 is etched by the thickness of the cover layer 200. In this case, the second conductive portion 350 may be formed by the thickness of the cover layer 200, and the first conductive portion 340 may be formed below the second conductive portion 350. However, this is merely an example, and the first conductive portion 340 and the second conductive portion 350 may be formed by a known method other than etching.

[0130] The description of the cover layer 200 and the solder 600 in the fourth embodiment is omitted because it is the same as the description of the cover layer 200 and the solder 600 in the third embodiment. Therefore, the relationship between the first conductive portion 340 and the second conductive portion 350, respectively, and the cover layer 200 and the solder 600 in the fourth embodiment is the same as the relationship between the first conductive layer 310 and the second conductive layer 320, respectively, and the cover layer 200 and the solder 600 in the third embodiment.

[0131] In this manner, the light emitting diode module 1 according to the fourth embodiment can minimize the step formed between the cover layer 200 and the second conductive portion 350, thereby minimizing the amount of solder 600 provided between the electrode layer 170 and the second conductive portion 350. In this case, even if the light emitting diode 100 is miniaturized, the amount of solder 600 is minimized, and the light emitting diode 100 can be bonded to an accurate position on the substrate 500.

[0132] On the other hand, the first metal mask 2 in FIG. 15 is coated with solder 600 in two A×B sizes, and the PN electrodes of the light emitting diodes 100 are bonded thereto.

[0133] In addition, the second metal mask 3 in FIG. 16 has solder 600 applied to four AxA sizes, and the P electrodes of the light-emitting diodes 100 are bonded to two AxA sizes, and the N electrodes of the light-emitting diodes 100 are bonded to the remaining two AxA sizes.

[0134] 15, the size of the first metal mask 2 is such that the length of the width B is longer than the length of the length A, but is shorter than twice the length of the length A. Also, referring to Fig. 16, the size of the second metal mask 3 is such that the length of the width A is the same as the length of the length A.

[0135] Therefore, on the same structure, a larger amount of solder 600 is applied when the second metal mask 3 of Fig. 16 is used than when the first metal mask 2 of Fig. 15 is used. In addition, when the second metal mask 3 of Fig. 16 is used, the area over which the solder 600 spreads increases, improving the spreadability of the solder 600.

[0136] Therefore, when the amount of solder 600 is large compared to the size of the electrode layer 170 of the light-emitting diode 100, the amount of solder 600 can be adjusted to be reduced by using the first metal mask 2 of Fig. 15. Also, when it is necessary to improve the spreadability of the solder 600 rather than adjust the amount of the solder 600, the spreadability of the solder 600 can be improved by using the second metal mask 3 of Fig. 16.

[0137] Meanwhile, since the amount of solder 600 applied in the first embodiment is greater by the thickness of the cover layer 200 than the amount of solder 600 applied in the third or fourth embodiment, the amount of solder 600 can be reduced by using the first metal mask 2 in Fig. 15. In this case, the occurrence of solder balls 610 can be prevented, thereby reducing the defect rate. Referring to Figs. 17 and 18, the occurrence rate of solder balls 610 due to the use of metal masks can be compared.

[0138] FIG. 17 is an X-ray diagram of the top surface of a substrate 500 to which a light-emitting diode 100 is bonded after solder 600 is applied using the first metal mask 2 of FIG. 15, in a structure in which the first cover part 210 and the second cover part 220 of the first embodiment form a step.

[0139] Figure 18 is an X-ray diagram of the top surface of a substrate 500 to which a light-emitting diode 100 is bonded after solder 600 is applied using the second metal mask 3 of Figure 16, in a structure in which the first cover part 210 and the second cover part 220 form a step.

[0140] 17 and 18, it can be seen that the incidence rate of solder balls 610 when the first metal mask 2 of FIG. 15 was used was improved compared to when the second metal mask 3 of FIG. 16 was used.

[0141] In the case of the structure employing the second conductive layer 320 in the third embodiment and the structure employing the pattern layer 300 including the first conductive portion 340 and the second conductive portion 350 in the fourth embodiment, the amount of solder is designed to be minimized, so that the use of the second metal mask 3 in FIG. 16 can further improve the solder spreadability.

[0142] 19 is a plan view showing a display device to which the light emitting diode modules according to the first to fourth embodiments of the present invention are applied. The display device 1000 may include a light emitting diode module 1100, a frame 1210, an optical unit 1220, and a power supply unit 1230.

[0143] The frame 1210 supports the display device 1000 and may be made of a metal material such as an aluminum alloy or a synthetic resin material. The frame 1210 may be spaced apart from the optical unit 1220 by a predetermined distance. The light emitting diode module 1100 according to the first to fourth embodiments of the present invention may be disposed on the frame 1210 so as to face the optical unit 1220. At this time, the distance between the frame 1210 and the optical unit 1220 may be an OD (optical distance) from the light emitting diode module 1100 to the optical unit 1220. At this time, the OD in this embodiment may be about 1 mm or more and 15 mm or less. The power supply unit 1230 is electrically connected to the light emitting diode module 1100 and may supply power to the light emitting diode module 110. The power supply unit 1230 may be provided in the frame. The optical unit 1220 is disposed on the upper portion of the frame 1210 and may include a phosphor sheet, a diffusion plate, an optical sheet, etc. In the display device 1000 of this embodiment, the distance between the light emitting diode of the light emitting diode module 1100 and the circuit board is minimized, so that the small-sized light emitting diode can be fixed at an accurate position on the circuit board, thereby improving the reliability of the display device.

[0144] Although the examples of the present invention have been described above as specific embodiments, these are merely illustrative, and the present invention is not limited thereto, and should be construed as having the broadest scope according to the technical ideas disclosed in this specification. Those skilled in the art may combine / replace the disclosed embodiments to implement patterns of shapes not shown, but this would not depart from the scope of the present invention. Furthermore, those skilled in the art may easily modify or change the embodiments disclosed based on this specification, and it is clear that such modifications or changes also fall within the scope of the present invention.

Claims

1. a light-emitting diode capable of emitting light; A conductive pattern layer electrically connected to the light emitting diode; and a cover layer disposed on the conductive pattern layer and electrically insulating; The cover layer is disposed between the light-emitting diode and the conductive pattern layer so as to have an area at least partially overlapping the light-emitting diode when viewed from above the light-emitting diode. Light emitting diode module.

2. the light emitting diode includes a light-transmitting layer, a light-emitting structure disposed on the light-transmitting layer, and an electrode layer electrically connected to the conductive pattern layer; The light emitting structure includes a first conductive type semiconductor layer, a second conductive type semiconductor layer located on the first conductive type semiconductor layer, and an active layer located between the first conductive type semiconductor layer and the second conductive type semiconductor layer; 2. The light-emitting diode module according to claim 1, wherein the cover layer is disposed so as to have an area where at least a portion of the cover layer overlaps between the light-transmitting layer and the electrode layer when viewed from above the light-emitting diode.

3. the cover layer includes a first cover portion and a second cover portion that forms a step with the first cover portion, The light-emitting diode module according to claim 1 , wherein the electrode layer is disposed so as not to overlap the first cover portion when viewed from above.

4. 3. The light-emitting diode module according to claim 2, wherein the cover layer is arranged so as to have an area in which at least a portion of the cover layer overlaps between the light-transmitting layer and the first conductive type semiconductor layer when viewed from above the light-emitting diode.

5. The light emitting diode module according to claim 3 , wherein the first cover portion has a roughness of an upper surface thereof that does not overlap with the second cover portion smaller than a roughness of a lower surface thereof.

6. The light emitting diode module according to claim 3 , wherein at least one of the first cover part and the second cover part includes a reflective material to reflect light emitted from the light emitting diode.

7. The light-emitting diode module according to claim 1 , wherein the cover layer has at least a part of an edge that has a curved shape.

8. the second cover portion is disposed on the first cover portion; The light emitting diode module according to claim 3 , wherein the first cover portion and the second cover portion have different thicknesses.

9. a solder disposed between the electrode layer and the conductive pattern layer for fixing the light emitting diode to the conductive pattern layer; The first cover portion has a through hole that exposes the conductive pattern layer toward the light emitting diode, The light-emitting diode module according to claim 3 , wherein at least a portion of the solder is disposed within the through hole.

10. the solder has a first solder side and a second solder side formed on opposite sides; 10. The light-emitting diode module of claim 9, wherein the first solder side and the second solder side are inclined with respect to the conductive pattern layer such that the angles that the first solder side and the second solder side make with the conductive pattern layer are different from each other.

11. the solder has a first solder side and a second solder side formed on opposite sides; The light emitting diode module according to claim 9, wherein the first solder side and the second solder side are curved to have different curvatures.

12. The conductive pattern layer is formed with a through hole having a width smaller than that of the through hole at a position corresponding to the through hole, 10. The light-emitting diode module according to claim 9, wherein at least a portion of the solder is disposed within the communication hole.

13. The light emitting diode includes an electrode layer for electrically connecting with the conductive pattern layer; the conductive pattern layer includes a first conductive layer and a second conductive layer disposed on top of the first conductive layer; 2. The light emitting diode module according to claim 1, wherein the electrode layer is disposed on the second conductive layer.

14. The light-emitting diode module according to claim 13 , wherein the cover layer is disposed on the first conductive layer so as not to overlap the second conductive layer when viewed from above.

15. The light emitting diode includes an electrode layer for electrically connecting with the conductive pattern layer; the conductive pattern layer includes a first conductive portion and a second conductive portion integrally formed with the first conductive portion and extending upward from an upper surface of the first conductive portion; The light emitting diode module according to claim 1 , wherein the electrode layer is disposed on the second conductive portion.

16. The light-emitting diode module according to claim 15, wherein the cover layer is disposed on the first conductive portion so as not to overlap the second conductive portion when viewed from above.

17. 2. The light-emitting diode module according to claim 1, wherein, when viewed from above, a ratio of an area of ​​an overlapping portion of said light-emitting diode and said cover layer to an area of ​​said light-emitting diode is 2% or more and 8% or less.

18. The cover layer includes a photo solder resist (PSR), 2. The light emitting diode module according to claim 1, wherein the PSR includes at least one of epoxy, silicon, acrylate, and barium sulfate.

19. Frame; a light emitting diode module disposed on the top of the frame; an optical portion disposed on the top of the frame; and a power supply unit for supplying power to the light emitting diode module; The light emitting diode module includes: a light-emitting diode capable of emitting light; A conductive pattern layer electrically connected to the light emitting diode; and a cover layer disposed on the conductive pattern layer and electrically insulating; the cover layer is disposed between the light emitting diode and the conductive pattern layer such that at least a portion of the cover layer is located directly below the light emitting diode; Display device.

20. Frame; a light emitting diode module disposed on the top of the frame; an optical portion disposed on the top of the frame; and a power supply unit for supplying power to the light emitting diode module; The light emitting diode module includes: a light-emitting diode capable of emitting light; A conductive pattern layer electrically connected to the light emitting diode; and a cover layer disposed on the conductive pattern layer and electrically insulating; the cover layer is disposed between the light emitting diode and the conductive pattern layer so as to have an area at least partially overlapping the light emitting diode; Display device.

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