Optoelectronic Modules

Abstract

The present invention relates to an optoelectronic module, which comprises an optoelectronic component structure for emitting light with at least one optoelectronic component, an electronic semiconductor chip for controlling the operation of said optoelectronic component structure, and a carrier, the optoelectronic component structure being arranged at least on said electronic semiconductor chip, the optoelectronic component structure being configured to cause light emission laterally to said electronic semiconductor chip in areas covering said electronic semiconductor chip and in areas not covering said electronic semiconductor chip.

Description

[Technical field]

[0001] The present invention relates to an optoelectronic module comprising an optoelectronic component structure for emitting light having at least one optoelectronic component and an electronic semiconductor chip for controlling the operation of the optoelectronic component structure.

[0002] This patent application claims priority from German patent application No. 10 2022 112 637.4, the disclosure content of which is incorporated herein by reference.

[0003] An optoelectronic module for light emission may comprise an optoelectronic component structure with one or more light-emitting optoelectronic components and an electronic semiconductor chip for controlling the operation of the optoelectronic component structure. One possible field of use is the headlights of adaptive lighting systems (AFS, adaptive front lighting systems) used in the automotive field. The light emission may be achieved by a pixelated light-emitting semiconductor chip (μAFS, microstructured adaptive front lighting systems) arranged on the electronic semiconductor chip and contacted by the latter. In this case, the light emission may occur in the area where the pixelated light-emitting semiconductor chip covers the electronic semiconductor chip. The two semiconductor chips may be adjusted to each other in terms of the dimensions and the contact elements used for the contact. A geometrical change in the light emission may be brought about by a design change of the pixelated semiconductor chip or by the addition of further light-emitting components implemented on the electronic semiconductor chip. This may in each case be associated with a design change of the electronic semiconductor chip and thus with high complexity and costs. Summary of the Invention [Problem to be solved by the invention]

[0004] It is an object of the present invention to provide an improved optoelectronic module that allows for high configuration flexibility. [Means for solving the problem]

[0005] This object is achieved by the optoelectronic module according to claim 1. Further advantageous embodiments of the invention are described in the dependent claims.

[0006] According to one aspect of the invention, an optoelectronic module is proposed. The optoelectronic module comprises an optoelectronic component structure for emission having at least one optoelectronic component, an electronic semiconductor chip for controlling the operation of the optoelectronic component structure, and a carrier. The optoelectronic component structure is arranged at least on the electronic semiconductor chip. The optoelectronic component structure is configured to cause light emission in a region covering the electronic semiconductor chip, in a region not covering the electronic semiconductor chip, and laterally of the electronic semiconductor chip.

[0007] The proposed optoelectronic module differs from conventional configurations in that the light emission by the optoelectronic component structure is not only restricted to the region of the electronic semiconductor chip where it is used for control purposes, but is additionally extended to the lateral regions of the electronic semiconductor chip. In this regard, the emission of light radiation can occur in the region where the electronic semiconductor chip is covered by the optoelectronic component structure, in a further lateral region of the electronic semiconductor chip, and in a region where the electronic semiconductor chip is not covered by the component structure. This applies as seen in a plan view of the front or light-emitting side of the optoelectronic module from where the light radiation can be emitted.

[0008] This approach allows a high degree of configuration freedom and flexibility for the manufacture of the optoelectronic module. Different configurations of the optoelectronic module can be realized here in a flexible manner using the same, for example standardized, configuration of the electronic semiconductor chip in each case, and different configurations of the optoelectronic component structure and optionally different configurations of the carrier. This approach does not involve changes of the electronic semiconductor chip, which is associated with high complexity, so that costs are saved as much as possible. Furthermore, electronic semiconductor chips with compact dimensions can be used, which are likewise cost-effective. Different configurations of the optoelectronic component structure can be achieved, for example, by different configurations, numbers, shapes and / or sizes of the optoelectronic components used in each case. For example, different microLED technologies can be combined here.

[0009] Further possible details and embodiments that may be considered for the optoelectronic module are described in more detail below.

[0010] Depending on the number of optoelectronic components used for light emission, the optoelectronic component structure may include one or more light-emitting areas arranged adjacent to one another in which light emission can take place. In this case, as seen in a plan view of the light-emitting side of the optoelectronic module, the one or more light-emitting areas may at least partially cover the electronic semiconductor chip and may also cover the lateral carriers of the electronic semiconductor chip.

[0011] The electronic semiconductor chips used to control the operation of the optoelectronic component structures may be CMOS chips (Complementary Metal Oxide Semiconductor) and / or Application Specific Integrated Circuit or ASIC chips.

[0012] The electronic semiconductor chip, the optoelectronic component structure or at least one optoelectronic component thereof and optionally the carrier may comprise contact elements. The contact elements may be embodied in a metallic manner. In this case, the contact elements of the optoelectronic component structure may be electrically connected to the contact elements of the electronic semiconductor chip and, optionally, to the contact elements of the carrier. In this way, an electric potential can be applied to the contact elements of the optoelectronic component structure, whereby the component structure can be electrically supplied in an appropriate manner during operation. The electric potential may be generated by the electronic semiconductor chip. If the carrier as well as the electronic semiconductor chip comprises one or more contact elements, the contact elements of the carrier may be electrically connected to the electronic semiconductor chip in an appropriate manner. For this purpose, the carrier may comprise, for example, one or more conductor structures, such as conductor tracks, which can be electrically connected to the electronic semiconductor chip. The contact elements of the electronic semiconductor chip and the carrier used for contacting the optoelectronic component structure may be arranged in a common horizontal plane, thereby forming a contact surface.

[0013] The optoelectronic component structure can be arranged not only on the electronic semiconductor chip, but also on the carrier. In this case, the component structure can be connected to the electronic semiconductor chip or, if arranged on the carrier, to the carrier. The respective connection can be an electrically conductive and thermal connection or a only thermally conductive connection and can be produced by a connection medium. For this, solder or (conductive) adhesive can be used. With regard to the electrical connection, the rear contact element of the component structure can be connected to an opposing further contact element, which can be part of the electronic semiconductor chip and optionally part of the carrier. By only the electrically conductive and thermally conductive connection, heat dissipation can be achieved during operation of the optoelectronic component structure.

[0014] For a purely thermally conductive connection, the use of solder as a connection medium can also be considered. In order to prevent undesired electrical connections from occurring here, an insulating layer can be provided in the area of ​​the thermal connection. The insulating layer can be part of the optoelectronic component of the optoelectronic component structure.

[0015] Further possible configurations of the optoelectronic module and the optoelectronic component structure, as well as of the at least one optoelectronic component thereof, are described below, where features and details mentioned with respect to one configuration may also apply with respect to another described configuration, and multiple configurations may be combined with each other. As an example, an optoelectronic component structure may include multiple optoelectronic components provided with different configurations from those described below.

[0016] The optoelectronic component structure comprises at least one optoelectronic component. This may comprise a light-emitting semiconductor chip. The semiconductor chip may be a thin-film chip and may comprise, in addition to contact elements, a light-emitting semiconductor stack and possibly a conversion layer for radiation conversion. The semiconductor stack may generate a primary light radiation, which may be at least partially converted by the conversion layer into a secondary light radiation. A mixed radiation comprising the primary light radiation and the secondary light radiation may be emitted as a result. The use of pixelated light-emitting semiconductor chips is also possible. Such a monolithic semiconductor chip may comprise separately drivable pixels arranged next to each other for the purpose of emitting light.

[0017] In one configuration of the optoelectronic component structure comprising a plurality of optoelectronic components, a plurality of light-emitting semiconductor chips can be used. The light-emitting semiconductor chips can further be realized in the form of light-emitting diode chips or LED chips. The use of laser diode chips or surface emitters (VCSEL, vertical cavity surface-emitting lasers) is also possible. Instead of one or more semiconductor chips, the use of one or more packaged optoelectronic components is also conceivable, which may include one or more (light-emitting) semiconductor chips provided with a package.

[0018] In one configuration of an optoelectronic component structure including multiple light emitting components or semiconductor chips, these may be configured to generate light radiation including, for example, white, or to generate light radiation of different colors, depending on the application.

[0019] In the case of optoelectronic components or semiconductor chips configured for emitting light, emission of the emitted light may occur via or substantially via the front side of the component. The associated component may be provided with contact elements for contacting the opposite rear side. This configuration is sometimes referred to as a flip-chip or horizontal configuration. A vertical configuration is also possible, with contact elements present on both sides, i.e. the front and rear sides.

[0020] In a further embodiment, the optoelectronic component structure includes an optoelectronic component disposed on the electronic semiconductor chip and the carrier and covering the electronic semiconductor chip and the lateral carrier of the electronic semiconductor chip in an area, in this way the associated optoelectronic component can cause light emission in a continuous area where the optoelectronic component covers the electronic semiconductor chip and also covers the lateral carrier of the electronic semiconductor chip.

[0021] In a further embodiment, the optoelectronic component structure comprises an optoelectronic component that protrudes laterally beyond the electronic semiconductor chip, thereby covering the carrier in a lateral region of the electronic semiconductor chip and only thermally or thermally conductively connected to the carrier in this region. Thermal energy arising during operation of the associated optoelectronic component can thereby be reliably dissipated by the carrier. Furthermore, the optoelectronic component can be arranged on the electronic semiconductor chip and electrically contacted by the electronic semiconductor chip, such that heat can also be dissipated by the electronic semiconductor chip.

[0022] In a further embodiment, the optoelectronic component structure comprises an optoelectronic component arranged at least on the electronic semiconductor chip and covering at least the electronic semiconductor chip in an area. Furthermore, the optoelectronic component structure comprises at least one further optoelectronic component arranged at least on the carrier and covering at least the carrier in a lateral area of ​​the electronic semiconductor chip. In this configuration, the associated optoelectronic component can cause light emission in the area of ​​the electronic semiconductor chip and in the lateral area of ​​the electronic semiconductor chip.

[0023] In a further embodiment, the optoelectronic component structure comprises an optoelectronic component having contact elements at its rear side electrically connected to the opposing contact elements of the electronic semiconductor chip. In this way, an electric potential suitable for operation can be applied to the contact elements of the relevant optoelectronic component via the contact elements of the electronic semiconductor chip connected thereto. The electrical connection can be established by a connection medium such as solder or conductive adhesive. In this configuration, the optoelectronic component can cause light emission in the area of ​​the electronic semiconductor chip, optionally provided that the component is not only located in the area of ​​the electronic semiconductor chip, but also additionally protrudes beyond the electronic semiconductor chip, thereby covering the carrier in a lateral area of ​​the electronic semiconductor chip. In this area, the optoelectronic component may be connected to the carrier purely thermally conductively and thereby arranged on the carrier.

[0024] In a further embodiment, the optoelectronic component structure comprises an optoelectronic component in the form of a pixelated light-emitting semiconductor chip, as already mentioned above, arranged on an electronic semiconductor chip. The pixelated light-emitting semiconductor chip comprises contact elements on the back side, which are electrically connected to the opposing contact elements of the electronic semiconductor chip. In this way, an appropriate potential for operation can be applied to the contact elements of the pixelated light-emitting semiconductor chip via the contact elements of the electronic semiconductor chip connected thereto, in which respect the pixels of the pixelated light-emitting semiconductor chip can be driven for light emission purposes. The electrical connection can be established by a connection medium, such as solder or a conductive adhesive.

[0025] The pixelated light-emitting semiconductor chip may include a semiconductor stack or a semiconductor body having light-emitting regions arranged next to each other. The light-emitting regions may be configured to generate a primary light radiation. The pixelated light-emitting semiconductor chip may further comprise a conversion layer arranged on the semiconductor stack for the purpose of radiation conversion, by which the primary light radiation may be partially converted into a secondary light radiation. A mixed radiation comprising the primary light radiation and the secondary light radiation may be emitted during operation. The primary light radiation and the secondary light radiation may be blue light radiation and yellow light radiation, so that an overall white light source radiation may be emitted.

[0026] The pixels of the pixelated light-emitting semiconductor chip may each be formed by a light-emitting region of the semiconductor stack and a region of the conversion layer through which radiation from the associated light-emitting region is transmitted during operation. The lateral geometry of the pixel may be predefined by the lateral geometry of the light-emitting region.

[0027] The rear contact elements of the pixelated light-emitting semiconductor chip may include separate contact elements respectively assigned to the light-emitting areas and thus to the pixels. The pixelated light-emitting semiconductor chip may further comprise a continuous contact element on the rear surface. The continuous contact element may comprise a notch having the separate contact element arranged therein. In a corresponding manner, the electronic semiconductor chip may comprise a continuous contact element with a notch and a separate contact element arranged in the notch. In this case, the continuous contact element and the separate contact element of the pixelated light-emitting semiconductor chip may be electrically connected to the continuous contact element and the separate contact element of the electronic semiconductor chip.

[0028] The pixelated light-emitting semiconductor chip may be arranged only in the area of ​​the electronic semiconductor chip or only in the area covering the electronic semiconductor chip, so that the pixelated light-emitting semiconductor chip can cause light emission in the area of ​​the electronic semiconductor chip. It is also possible to configure the pixelated light-emitting semiconductor chip to emit light in a lateral area of ​​the electronic semiconductor chip.

[0029] Thus, according to a further embodiment, the pixelated light-emitting semiconductor chip is provided with contact elements on its rear side which project laterally beyond the electronic semiconductor chip and are electrically connected to the opposite contact elements of the electronic semiconductor chip. According to the above-mentioned configuration, the rear side and the laterally projecting contact elements may comprise separate contact elements respectively assigned to the light-emitting areas and thus to the pixels or may be separate contact elements. The associated light-emitting areas and pixels may also project laterally beyond the electronic semiconductor chip. The separate contact elements may further comprise an elongated shape. The same applies for the associated light-emitting areas and pixels of the pixelated light-emitting semiconductor chip. The pixelated light-emitting semiconductor chip may further comprise a continuous contact element on its rear side. The continuous contact element may likewise project laterally beyond the electronic semiconductor chip and may comprise corresponding cutouts for the separate elongated contact elements.

[0030] The pixelated light emitting semiconductor chip protruding laterally beyond the electronic semiconductor chip may further be configured such that the semiconductor chip is present in an area of ​​the electronic semiconductor chip and includes pixels having relatively small dimensions with associated separate contact elements, for example, and elongated pixels protruding beyond the electronic semiconductor chip with associated separate elongated contact elements.

[0031] Furthermore, the pixelated light-emitting semiconductor chip can cover the carrier in certain areas due to its laterally protruding nature, whereby in this area the pixelated light-emitting semiconductor chip can be connected to the carrier purely thermally conductively and thereby arranged on the carrier.

[0032] It is further conceivable to realize an optoelectronic module with a plurality or two pixelated light-emitting semiconductor chips arranged adjacent to one another. In this case, the first pixelated light-emitting semiconductor chip may be mounted only in the area of ​​the electronic semiconductor chip, and the second pixelated light-emitting semiconductor chip may be arranged in the area of ​​the electronic semiconductor chip and in the area of ​​the carrier, thereby projecting laterally beyond the electronic semiconductor chip. Both semiconductor chips may comprise rear contact elements that are contacted by the electronic semiconductor chip in the above-mentioned manner, and the second semiconductor chip may comprise contact elements that project laterally beyond the electronic semiconductor chip. The first semiconductor chip may, for example, comprise pixels having relatively small dimensions with associated separate contact elements, and the second semiconductor chip may comprise elongated pixels that project beyond the electronic semiconductor chip with associated separate elongated contact elements.

[0033] In a further embodiment, the optoelectronic component structure comprises an optoelectronic component having contact elements on the rear side, one of which rear contact elements is electrically connected to the opposite contact elements of the electronic semiconductor chip, and a further rear contact element of the optoelectronic component is electrically connected to the opposite contact elements of the carrier. In this way, an electric potential suitable for operation can be applied to the contact elements of the associated optoelectronic component via the contact elements of the electronic semiconductor chip and the carrier connected thereto. The electrical connection can be established by a connection medium such as solder or a conductive adhesive. In this configuration, the optoelectronic component bridges the electronic semiconductor chip and the carrier in an area or covers the electronic semiconductor chip and the carrier laterally of the electronic semiconductor chip, in this respect causing light emission in the area of ​​the electronic semiconductor chip and laterally of the electronic semiconductor chip.

[0034] In a further embodiment, the optoelectronic component structure comprises an optoelectronic component having contact elements at its backside electrically connected to the opposing contact elements of the carrier. In this case, an electrical potential suitable for operation may be applied to the contact elements of the relevant optoelectronic component via the contact elements of the carrier connected thereto. The electrical connection may be established by a connection medium such as solder or a conductive adhesive. In this configuration, the optoelectronic component may cause light emission in an area beside the electronic semiconductor chip, optionally provided that the component covers not only the carrier but also the electronic semiconductor chip in the area of ​​the electronic semiconductor chip.

[0035] In a further embodiment, the optoelectronic component structure comprises an optoelectronic component having contact elements on the front side and contact elements on the rear side. The rear contact elements of the optoelectronic component are electrically connected to the opposite contact elements of the electronic semiconductor chip, and the front contact elements of the optoelectronic component are electrically connected to the contact elements of the carrier. In this way, an electric potential suitable for operation can be applied to the contact elements of the associated optoelectronic component via the contact elements of the electronic semiconductor chip and the carrier connected thereto. In this configuration, the optoelectronic component can cause light emission in the area of ​​the electronic semiconductor chip, and optionally the component is not only located in the area of ​​the electronic semiconductor chip, but also protrudes further beyond the electronic semiconductor chip, thereby covering the lateral direction of the electronic semiconductor chip and also the carrier of the electronic semiconductor chip. In this area, the optoelectronic component may additionally be thermally connected to the carrier and thereby arranged on the carrier.

[0036] With regard to the above configuration, the rear contact elements of the optoelectronic component and the opposite contact elements of the electronic semiconductor chip may be connected by a connection medium such as solder or conductive adhesive. The front contact elements of the optoelectronic component and the contact elements of the carrier may be electrically connected by a contact layer. The contact layer may be a planar contact layer, also called PI contact (planar interconnect). Furthermore, the contact layer may be transparent and for this purpose may be formed, for example, from indium tin oxide (ITO).

[0037] In addition to contact elements for operation of the optoelectronic component structure, the electronic semiconductor chip may further comprise contact elements capable of supplying electrical energy to the electronic semiconductor chip and performing data communication with the electronic semiconductor chip, the latter of which may include, for example, communication of control signals to the electronic semiconductor chip.

[0038] The electronic semiconductor chip may be provided with contact elements on the front side. In this case, one or more front contact elements of the electronic semiconductor chip may be connected to one or more rear contact elements of one or more optoelectronic components of the optoelectronic component structure. Furthermore, one or more front contact elements of the electronic semiconductor chip may be connected to one or more contact elements of the carrier, inter alia, by means of a conductor structure of the carrier used. The front contact elements of the electronic semiconductor chip and the contact elements of the carrier may form a contact surface.

[0039] In a further embodiment, the electronic semiconductor chip comprises contact elements on a front side and a rear side. In this configuration, the rear-side contact element of the electronic semiconductor chip can be used, for example, to supply electrical energy to the electronic semiconductor chip and to perform data communication with the electronic semiconductor chip. For this purpose, the rear-side contact element of the electronic semiconductor chip may be electrically connected to the contact element of the carrier and the conductor structure. Furthermore, it is possible to use the rear-side contact element of the electronic semiconductor chip to control the operation of at least one optoelectronic component of the optoelectronic component structure.

[0040] For this purpose, according to a further embodiment, the carrier is electrically connected to the contact element of the electronic semiconductor chip on the rear side of the electronic semiconductor chip and comprises an extension contact element that projects laterally beyond the electronic semiconductor chip on the rear side of the electronic semiconductor chip. The optoelectronic component structure comprises optoelectronic components arranged laterally adjacent to the electronic semiconductor chip and, for example on the rear side, comprises contact elements electrically connected to the extension contact element. By means of this component, lateral light emission of the electronic semiconductor chip can be caused.

[0041] Regarding the above-described configuration, the optoelectronic module comprises two mutually offset contact surfaces and can thus comprise optoelectronic components arranged on the offset surfaces. One contact surface may be formed by the front-side contact element of the electronic semiconductor chip and optionally the front-side contact element of the carrier, and another contact surface may be formed by the extension contact element of the carrier located on the rear side of the electronic semiconductor chip. The optoelectronic component contacted by the extension contact element may be, for example, a (further) pixelated light-emitting semiconductor chip.

[0042] In a further embodiment, the carrier comprises a current supply device for current supply of the optoelectronic component of the optoelectronic component structure. The current supply device comprises a switching element for activating the current supply, the switching element being electrically connected to the electronic semiconductor chip and controllable by the electronic semiconductor chip. The switching element may be a transistor. In this configuration, a high-current operation of the optoelectronic component (e.g., current strength of several amperes) supplied by the current supply device can be enabled by the current supply device. In this case, a high-current design of the electronic semiconductor chip is not required, since the electronic semiconductor chip only functions to control the high-current operation and not to supply electrical energy. As a result, the electronic semiconductor chip can be realized cost-effectively. The current supply device of the carrier can include a conductor structure and a contact element electrically connected to the contact element of the optoelectronic component. During operation, the current supply device can be electrically connected to a suitable current source.

[0043] The current supply device of the carrier may also be configured for current supply of a plurality of optoelectronic components, in which case the current supply device may comprise a plurality of switching elements for actuating the current supply of the plurality of components, said switching elements being controllable by the electronic semiconductor chip.

[0044] The electronic semiconductor chip and carrier may be configured such that the front surface of the electronic semiconductor chip is flush with or substantially co-terminus with the front surface of the carrier laterally adjacent to the electronic semiconductor chip. The level difference between the surfaces may be in the micrometer range or may amount to up to 1 micrometer. As a result, the optoelectronic component structure may be reliably mounted on the electronic semiconductor chip and carrier, for example, without risk of the semiconductor chip being damaged.

[0045] In a further embodiment, the carrier comprises a recess in which the electronic semiconductor chip is disposed. The recess may, as described above, comprise a depth such that a front surface of the electronic semiconductor chip terminates (substantially) flush with a front surface of the carrier located laterally adjacent to the electronic semiconductor chip. If the carrier comprises extended contact elements that protrude beyond the electronic semiconductor chip at a rear surface of the electronic semiconductor chip and the optoelectronic component structure comprises an optoelectronic component that is disposed next to the electronic semiconductor chip and contacted by the extended contact elements, the associated component may be disposed in the recess of the carrier as well.

[0046] The carrier may be constructed in one piece or in a multipartite manner. With regard to the latter variant, according to a further embodiment, the carrier comprises a base part and a further carrier part. The base part may be realised in a plate-type manner. The electronic semiconductor chip is arranged on the base part. The further carrier part is arranged on the base part laterally adjacent to the electronic semiconductor chip. The further carrier part may for example have a frame-type shape and surround the electronic semiconductor chip. Furthermore, the further carrier part may have a thickness such that the front surface of the electronic semiconductor chip ends flush or substantially flush with the front surface of the further carrier part located laterally adjacent to the electronic semiconductor chip. As mentioned above, if the carrier comprises extended contact elements protruding beyond the electronic semiconductor chip at the rear side of the electronic semiconductor chip and the optoelectronic component structure comprises an optoelectronic component arranged next to the electronic semiconductor chip and contacted by the extended contact elements, the associated component may likewise be arranged on the base part.

[0047] As the carrier material or base material of the carrier, the carrier may comprise a semiconductor material, such as silicon. In this case, the carrier may be, for example, a silicon chip. It is also possible to use ceramics or ceramic materials, such as silicon nitride, aluminum nitride or aluminum oxide. In this way, the carrier may comprise a thermal expansion behavior that may correspond to the thermal expansion behavior of electronic semiconductor chips and optoelectronic component structures. Furthermore, the carrier may be thermally conductive, allowing for reliable heat dissipation.

[0048] Optoelectronic modules can be configured not only for light emission, but also for radiation detection, which may be used, for example, to capture ambient light and control the light emission in concert therewith. Additionally, there is the potential for optical communication based on light emission and radiation detection.

[0049] With regard to radiation detection, the optoelectronic component structure may include a radiation detection optoelectronic component. The radiation detection component may be a semiconductor chip with a photodiode structure. According to the above-mentioned configuration, the radiation detection component may include contact elements electrically connected to contact elements of the electronic semiconductor chip and / or the carrier. In this way, the radiation detection component may be suitably electrically connected to the electronic semiconductor chip.

[0050] For radiation detection, it is further conceivable that the carrier comprises an integrated photodiode, which may then be electrically connected to the electronic semiconductor chip, inter alia, by one or more conductor structures of the carrier.

[0051] The advantageous embodiments and developments of the invention described above and / or presented in the dependent claims can, for example, be applied individually or in any desired combination with one another, apart from in cases of explicit dependencies or incompatible alternatives.

[0052] The above-mentioned characteristics, features and advantages of the present invention, as well as the manner in which they are achieved, will become more apparent and will be more clearly understood in connection with the following description of exemplary embodiments which are explained in more detail in connection with the schematic drawings. [Brief description of the drawings]

[0053]

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[0054] With reference to the following schematic diagrams, a possible configuration of an optoelectronic module 100 comprising an optoelectronic component structure 101 for light emission, an electronic semiconductor chip 110 used for control purposes, and a carrier 160 is described. The module 100 is configured to the effect that optical radiation can be emitted from the optoelectronic component structure 101 within the area of ​​the electronic semiconductor chip 110, laterally of the electronic semiconductor chip 110. It is pointed out that the schematic diagrams may not be to scale. Thus, the components and structures shown in the figures may be shown with an exaggerated large size or with a reduced size to improve understanding.

[0055] When the figures show cross-sectional views of the optoelectronic module 100 and its components, it is noted that the side directed upwards is designated as the front side and the side directed downwards is designated as the rear side. The front side of the module 100 and the light-emitting components further constitutes a light-emitting surface, by means of which light can be emitted. The designations of the front and rear sides are used corresponding to the components present on the respective sides, such as, for example, contact elements. The plan views show partial section lines that relate to the sections of the relevant cross-sectional views. It is additionally pointed out that the features and details mentioned with respect to one configuration may also apply with respect to other configurations, and that several configurations and their features may be combined with one another. Corresponding features may be described in detail here only with respect to one configuration.

[0056] The optoelectronic component structure 101 comprises at least one light emitting optoelectronic component, which may be realised in the form of an unpackaged light emitting semiconductor chip. The associated semiconductor chip may be a light emitting diode chip or an LED chip and may comprise contact elements arranged on one side (horizontal configuration) or on both sides (vertical configuration). Exemplary configurations are shown in cross-sectional views in Figures 1 to 3.

[0057] FIG. 1 shows a light emitting semiconductor chip 140 in a vertical configuration. The semiconductor chip 140 comprises a semiconductor stack 150 comprising a front side first semiconductor region 151 of a first conductivity type, a rear side second semiconductor region 153 of a second conductivity type different from the first conductivity type, and an active zone 152 located between the first and second semiconductor regions 151, 153. The first semiconductor region 151 may be of n-type conductivity and the second semiconductor region 153 may be of p-type conductivity. A reverse configuration is also possible, including a first semiconductor region 151 of p-type conductivity and a second semiconductor region 153 of n-type conductivity. The active region 152 serves to generate light and may consist of a p-n junction, a single quantum well structure, or a multiple quantum well structure formation. During operation, optical radiation 350 may be (substantially) emitted via the front side of the semiconductor chip 140. The semiconductor chip 140 further comprises two contact elements 230, 231, by means of which the semiconductor chip 140 can be contacted and electrically supplied and have a suitable potential applied to it in order to cause light emission. The contact element 231 for electrically connecting the first semiconductor region 151 is located on the front side, and the contact element 230 for electrically connecting the second semiconductor region 153 is located on the rear side of the semiconductor chip 140. Depending on the conductivity type of the semiconductor regions 151, 153, the contact elements 230, 231 can constitute n-contacts and p-contacts (or vice versa).

[0058] 2 shows a light emitting semiconductor chip 130 in a horizontal configuration. The semiconductor chip 130 differs in comparison with the semiconductor chip 140 of FIG. 1 in that two contact elements 230, 231 used for contacting and powering the semiconductor chip 130 are arranged on the rear side. In this configuration, the contact element 230 serves for the electrical connection of the second semiconductor region 153, and the contact element 231 is provided for the electrical connection of the first semiconductor region 151 of the semiconductor stack 150. For this purpose, the semiconductor chip 130 further comprises a via 157 connected to the contact element 231 and extending through the semiconductor stack 150 to the first semiconductor region 151, so that the first semiconductor region 151 can be electrically acted upon by the contact element 231. During operation, light radiation 350 can be (substantially) emitted via the front side of the semiconductor chip 130.

[0059] 3 shows a pixelated configuration of a light-emitting semiconductor chip 120 comprising a plurality of separately drivable light-emitting pixels 155 arranged adjacent to one another. For this purpose, the semiconductor chip 120 or its semiconductor stack 150 comprises a structure comprising a plurality of light-emitting regions 125 arranged adjacent to one another. In this case, the semiconductor layer sequence 150 comprises a first semiconductor region 151 in front-side succession and, in each light-emitting region 125, in each case a second semiconductor region 153 in the rear side and an active zone 152 located between the first semiconductor region 151 and the second semiconductor region 153. The active region 152 is configured in this example to generate light for generating a primary light emission 351.

[0060] The pixelated light-emitting semiconductor chip 120 further comprises a conversion layer 159 for radiation conversion purposes arranged on the semiconductor stack 150 at the front side. The conversion layer 159 is configured to partially convert a primary light radiation 351, which is generated by the active zone 152 of the light-emitting area 125 during operation and emitted in the direction of the conversion layer 159, into a secondary light radiation. The primary light radiation and the secondary light radiation, which may be emitted together in the formation of a superimposed mixed radiation 350 by the conversion layer 159, may be a blue light radiation and a yellow light radiation. In this way, a white light radiation 350 may be emitted by the front side of the semiconductor chip 120.

[0061] In the case of a pixelated light-emitting semiconductor chip 120, each pixel 155 is formed by a light-emitting area 125 of the semiconductor stack 150 and an area of ​​the conversion layer 159 from which, during operation, primary radiation 351 is emitted from the associated light-emitting area 125. The pixel shape of the pixel 155 is predefined by the lateral geometry of the light-emitting area 125 of the semiconductor stack 150.

[0062] The pixelated light-emitting semiconductor chip 120 further comprises a contact structure on the rear side, which comprises contact elements 220, 221, by means of which the semiconductor chip 120 can be contacted and electrically supplied. The contact structure comprises separate contact elements 221, which are respectively assigned to the light-emitting areas 125 and thus to the pixels 155, and each serve for the electrical connection of the second semiconductor area 153. The contact structure further comprises a continuous contact element 220, which is provided for the electrical connection of the first semiconductor area 151. Depending on the conduction type of the semiconductor areas 151, 153, the contact elements 220, 221 can constitute an n-type contact and a number of p-type contacts (or vice versa). The continuous contact element 220 comprises a cutout with the contact element 221 arranged therein. The cutouts of the contact element 220 and the separate contact elements 221 can comprise a circular contour in plan view, so that configurations as shown in Figures 10 and 19 can exist. 2, the semiconductor chip 120 comprises at least one via 157 connected to the continuous contact element 220 and extending through the semiconductor stack 150 to the first semiconductor region 151, so that the first semiconductor region 151 can be electrically acted upon by the contact element 220. The via 157 can have a continuous shape surrounding the second semiconductor region 153 and the active region 152. Alternatively, multiple separate vias 157 can be formed.

[0063] 1 and 2 (or semiconductor chips of other possible designs, not shown here), these may likewise be provided with a conversion layer 159 for radiation conversion purposes on the front side. In this case, primary light radiation 351 may be generated by the active region 152 and converted, partially or at least partially, into secondary light radiation by the conversion layer 159 (not shown).

[0064] The semiconductor chips 120, 130, 140 (or other possible designs of semiconductor chips) may be so-called microLEDs, or μLEDs, in which case the semiconductor chips may include structures and sizes in the micrometer range.

[0065] The rear contact elements of the components or semiconductor chips of the optoelectronic module 100 may be electrically connected to their opposite contact elements by means of an electrically conductive connection medium 180. This is shown diagrammatically in FIG. 4 for two contact elements 201, 202, for example the contact element 201 constituting the rear contact element of the optoelectronic component or semiconductor chip and the contact element 202 constituting the opposite contact element of the electronic semiconductor chip 110 or carrier 160. The connection medium 180, which connects the contact elements 201, 202 electrically and thereby also mechanically and thermally, may be solder or a conductive adhesive. In the subsequent figures the connection of the contact elements present in each case and established by the connection medium 180 is omitted for clarity.

[0066] 5 illustrates a cross-sectional view of an optoelectronic module 100 according to one possible configuration. The optoelectronic module 100 comprises a carrier 160, an optoelectronic component structure 101 for light emission, and an electronic semiconductor chip 110 for controlling the operation of the optoelectronic component structure 101. The carrier 160, also referred to as an extended carrier or submount, comprises a recess 161 within which the electronic semiconductor chip 110 is disposed on the carrier 160. The recess 161 includes a depth such that a front surface of the electronic semiconductor chip 110 terminates flush or substantially flush with a front surface of the carrier 160 that is located laterally adjacent to the semiconductor chip 110. The optoelectronic component structure 101 mounted on the electronic semiconductor chip 110 and the carrier 160 at least partially covers the electronic semiconductor chip 110 and the carrier 160 laterally of the electronic semiconductor chip 110, so that an emission of optical radiation 350 can be caused by the optoelectronic component structure 101 in the area covering the electronic semiconductor chip 110 and in the area not covering the semiconductor chip 110 laterally of the semiconductor chip 110. For the sake of illustration, FIG. 5 additionally shows areas 300, 301 where the optical radiation can occur. In this case, the area 300 constitutes the area covering the electronic semiconductor chip 110, and the area 301 is an area located laterally of the electronic semiconductor chip 110. The area 301 may also be called an extension zone.

[0067] The optoelectronic component structure 101 comprises a pixelated light-emitting semiconductor chip 120 and at least one further light-emitting component, which is for example configured differently and / or has different lateral dimensions, for example in the form of a semiconductor chip 130, as shown in Fig. 5 by a dashed line. The pixelated light-emitting semiconductor chip 120 is arranged on the electronic semiconductor chip 110. By the semiconductor chip 120 light emission can be brought about in an area or area 300 of the electronic semiconductor chip 110. This can include a finely pixelated light emission. The further light-emitting component or semiconductor chip 130 is arranged laterally on the electronic semiconductor chip 110 and / or on the carrier substrate 160. By the light-emitting component or semiconductor chip 130 light emission can be brought about in a lateral area or area 301 of the electronic semiconductor chip 110 and optionally also in the area or area 300 of the electronic semiconductor chip 110. For this purpose, at least one component or semiconductor chip 130 is arranged at least in the area 301. In this case, the associated components 130 may partially cover the electronic semiconductor chip 110 or may protrude into the area 300 .

[0068] The electronic semiconductor chip 110 as a control chip may be a silicon chip, may be realized as a CMOS chip (complementary metal oxide semiconductor) or as an ASIC (application specific integrated circuit). The electronic semiconductor chip 110 comprises on its front side a number of metal contact elements 210, 211, 212, 213, 215, among which the contact elements 210, 211, 212, 213 serve for the contact elements of the optoelectronic component structure 101 or a part thereof, in order to apply appropriate potentials to the associated contact elements during operation by the electronic semiconductor chip 110. The contact elements 215 are shown in the illustrated cross-sectional view and may be arranged adjacent to each other in series (see, for example, FIG. 10), but may also be used as drive contacts for external contacts of the electronic semiconductor chip 110, among others, in order to supply electrical energy to the semiconductor chip 110 and to perform data communication with the semiconductor chip 110. In this case, for example, control signals can be communicated to the electronic semiconductor chip 110, which allows the operation of the optoelectronic component structure 101 controlled by the semiconductor chip 110 to be predefined.

[0069] As shown in FIG. 5, the electronic semiconductor chip 110 comprises its contact elements 220, 221, i.e., a plurality of separate contact elements 211 and a continuous contact element 210 with a notch having the separate contact elements 211 arranged therein, coordinated with the pixelated light-emitting semiconductor chip 120. According to the contact elements 220, 221 of the semiconductor chip 120, the continuous contact element 210 and the notch of the separate contact elements 211 of the electronic semiconductor chip 110 can include a circular outline in a plan view, so that the configurations shown in FIGS. 11 and 20 can exist. Furthermore, the contact element 210 can constitute an n-type contact, and the contact element 211 can constitute a p-type contact (or vice versa). The mutually facing continuous contact elements 210, 220 and the separate contact elements 211, 221 of the two semiconductor chips 110, 120 are electrically connected to each other by a connection medium. In operation, the contact elements 220, 221 of the pixelated light emitting semiconductor chip 120 can be electrically actuated by the electronic semiconductor chip 110 such that the semiconductor chip 120 can be driven to emit light.

[0070] As further shown in Fig. 5, the electronic semiconductor chip 110 may comprise further front contact elements 212, 213 which may correspondingly constitute n-type and p-type contacts, respectively, for one or more further light-emitting components or semiconductor chips 130 of the optoelectronic component structure 101. As a result, the contact elements of these components may be contacted by the electronic semiconductor chip 110 and may be electrically acted upon by the semiconductor chip 110 during operation. The same applies analogously to the carrier 160, which may likewise comprise metal contact elements 260, 261 on the lateral front side of the electronic semiconductor chip 110 for establishing contacts with contact elements of one or more further light-emitting components or semiconductor chips 130 of the optoelectronic component structure 101. The contact elements 260, 261 may also constitute n-type and p-type contacts, respectively. In this case, the contact elements 260, 261 of the carrier 160 are suitably electrically connected to the electronic semiconductor chip 110, as indicated by dashed lines in Fig. 5, so that during operation a corresponding electrical potential can be applied by the electronic semiconductor chip 110 to the contact elements of the optoelectronic component structure 101 contacted by the contact elements 260, 261. The electrical connection between the contact elements 260, 261 of the carrier 160 and the electronic semiconductor chip 110 may inter alia be realised by metal conductor structures of the carrier 160 (e.g. front conductor tracks 270 as shown in Fig. 11).

[0071] In the case of the optoelectronic module 100 of FIG. 5, the front contact elements 210, 211, 212, 213 of the electronic semiconductor chip 110 and the contact elements 260, 261 of the carrier 160 used to contact the optoelectronic component structure 101 are in a horizontal plane and thus form a contact surface. Components on the electronic semiconductor chip 110 may be electrically driven by the contact elements 210, 211, 212, 213, and components located adjacent to a portion or the entirety of the semiconductor chip 110 may be electrically driven by the contact elements 260, 261. Depending on the configuration of the optoelectronic module 100 and its optoelectronic component structure 101, a different number of contact elements 210, 211, 212, 213, 215, 260, 261 may be provided, which may also include, for example, the presence or absence of only one of the contact elements 212, 213 on the electronic semiconductor chip 110 or the presence or absence of only one of the contact elements 260, 261 on the carrier 160.

[0072] As shown in FIG. 5, the electronic semiconductor chip 110 further comprises a number of switches 115, by means of which the operation of the optoelectronic component structure 101 for emitting light can be controlled. The switches 115 can be realized in the form of transistors. With respect to the pixelated light-emitting semiconductor chip 120, the separate contact elements 211 of the electronic semiconductor chip 110 are electrically connected to the respective switches 115. In this way, by selectively switching the switches 115, it is possible to selectively energize individual, multiple or all light-emitting areas 125, and thus pixels 155, of the pixelated light-emitting semiconductor chip 120 (see FIG. 4), thereby activating it for emitting light. As shown in FIG. 5, the further contact elements 213, 261 of the electronic semiconductor chip 110 and the carrier 160 may each be electrically connected to the respective switches 115 of the electronic semiconductor chip 110, by means of which the contacted components or semiconductor chips 130 may be selectively activated for emitting light in a corresponding manner by selective switching of the associated switches 115.

[0073] The electronic semiconductor chip 110 further comprises electrical or electronic circuit structures electrically connected to the switch 115 and to the contact elements 210, 211, 212, 213, 215, 260, 261 (in part via the switch 115) and capable of performing the functions mentioned above, such as driving the switch 115, providing electrical potentials suitable for operation of the optoelectronic component structure 101, and performing data communication or processing of control signals communicated to the electronic semiconductor chip 110. These circuit structures are shown diagrammatically in combined form as IC logic 111 (integrated circuit) in FIG.

[0074] The carrier 160 may, for example, comprise a semiconductor material, such as silicon, as a carrier material or base material. Configurations of the carrier 160 that comprise ceramic materials, such as silicon nitride, aluminum nitride or aluminum oxide, are also possible. As a result, the carrier 160 may comprise a thermal expansion behavior that corresponds to the thermal expansion behavior of the electronic semiconductor chip 110 and the optoelectronic component structure 101. In this way, the occurrence of different thermal expansions and associated mechanical stresses, with possible consequences of damage to the optoelectronic module 100, may be avoided. Furthermore, the carrier 160 is suitable for reliable heat dissipation.

[0075] The optoelectronic module 100 can be applied, for example, in the headlights of adaptive lighting systems (AFS or μAFS, microstructured adaptive front lighting systems) in automobiles. For such applications, the optoelectronic module 100 can be arranged in a projection or headlight module (not shown). In this case, for example, a light pattern with high spatial resolution may be provided by a pixelated light-emitting semiconductor chip 120 at one location of the illumination area, for example at its center, and a light pattern with lower spatial resolution may be provided by a further light-emitting component or semiconductor chip 130 at another location of the illumination area, for example at the edge. Furthermore, the semiconductor chip 120 may be used to generate a low beam light, and the further light-emitting component or semiconductor chip 130 may be used to realize a high beam light or a driving direction indicator. In deviation from FIG. 5 and further figures showing significant distances between the components of the optoelectronic component structure 101, the components may be arranged close to each other. As a result, a continuous illumination without visible boundaries between the components can be achieved.

[0076] The configuration of the optoelectronic module 100, which comprises the optoelectronic component structure 101, the electronic semiconductor chip 110 and the carrier 160, offers the possibility of high configuration flexibility. Different configurations of the optoelectronic module 100 with different light source geometries can now be realized with the same electronic semiconductor chip 110 in each case, and by different configurations of the optoelectronic component structure 101 and, optionally, by different configurations of the carrier 160. Since this approach does not involve complex changes of the electronic semiconductor chip 110, different configurations of the optoelectronic module 100 can be manufactured cost-effectively. Furthermore, the electronic semiconductor chip 110 can include compact dimensions that are likewise cost-effective.

[0077] With reference to the following figures, and based on FIG. 5, possible configurations or variations of the optoelectronic module 100, in which the optoelectronic component structure 101 also comprises a pixelated light-emitting semiconductor chip 120 and one or more further components, will be described in more detail. In particular, the arrangement and contacts of the further components will be discussed herein. Moreover, in contrast to FIG. 5, in some examples a simpler diagram is used in which details of the electronic semiconductor chip 110, such as its switches 115, are omitted. The same applies to the pixelated light-emitting semiconductor chip 120, in which in some examples only the separate contact elements 221 and in some of the electronic semiconductor chip 110 only the separate contact elements 211 are shown.

[0078] 6 shows a cross-sectional view of an optoelectronic module 100 according to one configuration, where the optoelectronic component structure 101 includes a light emitting semiconductor chip 130 disposed next to a pixelated light emitting semiconductor chip 120 on a carrier 160. In this case, rear contact elements 230, 231 of the semiconductor chip 130 are electrically connected to opposing contact elements 260, 261 of the carrier 160 via a connection medium. As described above with respect to FIG. 5, there is an electrical connection between the contact elements 260, 261 of the carrier 160 and the electronic semiconductor chip 110, such that the light emitting semiconductor chip 130 can be electrically supplied by the electronic semiconductor chip 110 and thereby driven to emit light. In this case, light emission from the semiconductor chip 130 occurs in a lateral area of ​​the electronic semiconductor chip 110.

[0079] 6, the optoelectronic component structure 101 may comprise a plurality of, for example three, light emitting semiconductor chips 130 mounted adjacent to one another on a carrier substrate 160, as shown in the front plan view of FIG. 10. FIG. 10 further illustrates the above-mentioned configuration of the electronic semiconductor chip 110 having a plurality of contact elements 215 arranged adjacent to one another. Additionally, rear contact elements 230, 231 of the light emitting semiconductor chip 130 and a rear contact structure of the pixelated light emitting semiconductor chip 120 having a continuous contact element 220 and separate contact elements 221 arranged in the cutouts of the contact element 220 are shown.

[0080] According to FIG. 6, the contact of the contact elements 230, 231 of the three light-emitting semiconductor chips 130 is in each case established by two contact elements 260, 261 of the carrier 160. The contact elements 260, 261 can be electrically connected to the electronic semiconductor chip 110, inter alia, by conductor structures of the carrier 160. For further illustration, FIG. 11 shows a plan view corresponding to FIG. 10, with an exemplary configuration suitable for this purpose, according to which the front conductor tracks 270 of the carrier 160 are used. The three light-emitting semiconductor chips 130 of the component structure 101 are shown here only by dashed lines. Furthermore, the pixelated light-emitting semiconductor chip 120 has been omitted, so that the contact structures of the electronic semiconductor chip 110 used for contacting the semiconductor chip 120, i.e. the continuous contact element 210 and the separate contact elements 211 arranged in the cutouts of the contact element 210, are visible.

[0081] As shown in FIG. 11 , the three contact elements 260 of the carrier 160 can be electrically connected to the contact elements 215 of the electronic semiconductor chip 110 by the carrier 160, which comprises a short conductor track 270 connecting the contact elements 260 and a longer conductor track 270 guided to the contact elements 215. At this position, the contact elements 215 and the conductor track 270 extending to the contact elements 215 are connected to each other by a conductive connection structure 181. The connection structure 181 can be, for example, a bonding wire or a metal connection layer. As for the three other contact elements 261 of the carrier 160, the contact elements 261 are electrically connected to the further contact elements 215 of the electronic semiconductor chip 110 by the conductor track 270 and the connection structure 181. For the other two contact elements 261, a joint electrical connection to the further contact elements 215 of the semiconductor chip 110 is established by the conductor track 270 and the connection structure 181. 11, a common potential is applied to the contact elements 260 by the electronic semiconductor chip 110 and by the respective connections between the contact elements 260, 261 of the carrier 160 and the corresponding contact elements 215 of the electronic semiconductor chip 110, and in each case a further potential is applied to the separately connected contact elements 261 and to the two together connected contact elements 261. As a result, of the three light emitting semiconductor chips 130, one semiconductor chip 130 can be driven separately and two semiconductor chips 130 can be driven together by the electronic semiconductor chip 110 for light emitting purposes.

[0082] 11 additionally shows a further configuration that can be considered for the electronic semiconductor chip 110 to be contacted from the outside. In this case, the carrier 160 comprises contact elements 265 and front conductor tracks 271 that are electrically connected and led to the contact elements 215 of the electronic semiconductor chip 110 and electrically connected to the contact elements 215 via the connection structure 181. In FIG. 11, this connection is shown only for one contact element 215 and one contact element 265, while for the further contact elements 215, 265 only dashed lines are shown. In this configuration, the electrical supply of the electronic semiconductor chip 110 and the data communication with the semiconductor chip 110 can be realized by the contact elements 265 of the carrier 160.

[0083] 6, 10 and 11, one possible modification consists in configuring the optoelectronic module 100 in such a way that the light emitting semiconductor chip 130 mounted on the carrier 160 partially overlaps the electronic semiconductor chip 110, so that light emission from the semiconductor chip 130 can also occur in the area of ​​the electronic semiconductor chip 110. With reference to Fig. 11, a modification consists in correspondingly configuring the conductor tracks 270 for all contact elements 261 of the carrier 160 to establish a joint electrical connection to one contact element 215, or alternatively to establish separate electrical connections to the contact elements 215 of the electronic semiconductor chip 110, so that the semiconductor chip 130 can be driven by the semiconductor chip 110, either together or separately, for light emitting purposes (in neither case shown).

[0084] The carrier 160 of the optoelectronic module 100 may be embodied in one piece and may comprise a recess 161 for receiving the electronic semiconductor chip 110, as mentioned above. A multipartite configuration of the carrier 160 is also possible. For illustration purposes, FIG. 7 shows a further configuration of the optoelectronic module 100 in cross section, which substantially corresponds to FIG. 6. In this case, the carrier 160 comprises a plate-shaped base part 162 and a further carrier part 163. The electronic semiconductor chip 110 is arranged on the base part 162. The further carrier part 163 comprises a frame-shaped shape surrounding a cutout and is arranged laterally adjacent to the electronic semiconductor chip 110 on the base part 162, such that the semiconductor chip 110 is laterally surrounded by the carrier part 163. The further carrier part 163 comprises a thickness such that the front surface of the electronic semiconductor chip 110 ends flush with the front surface of the carrier part 163.

[0085] In case of a multi-partite configuration of the carrier 160, the details described above and below may be applied in a corresponding manner. In this respect, both carrier parts 162, 163, or at least the carrier part 163, may be formed from a silicon or ceramic material. If the carrier 160 comprises contact elements 260, 261 as shown in Fig. 7, the contact elements 260, 261 may be arranged on the carrier part 163. Furthermore, the contact elements 260, 261 may be suitably electrically connected to the electronic semiconductor chip 110, which may be realized inter alia by front conductor tracks arranged on the carrier part 163, for example according to Fig. 11.

[0086] Further modifications to the carrier 160 are conceivable. By way of example, the further carrier part 163 may not surround the electronic semiconductor chip 110 but may have a different shape, for example a plate-type shape, partially surrounding or not surrounding the semiconductor chip 110. Furthermore, configurations including multiple carrier parts arranged on top of each other are conceivable. It is also possible to realize the electrical connection of the front contact elements 260, 261 of the carrier 160 by other conductor structures of the carrier 160, for example vias and conductors or conductor track structures led into the carrier 160 (the drawings do not show this). The multi-partite design of the carrier 160 can be adopted in a manner corresponding to the configuration of the optoelectronic module 100 described below.

[0087] FIG. 8 shows a cross-sectional view of an optoelectronic module 100 according to one configuration, in which the optoelectronic component structure 101 includes a light emitting semiconductor chip 130 arranged next to the pixelated light emitting semiconductor chip 120 on the electronic semiconductor chip 110 and on the carrier 160. In this case, the rear contact elements 231 of the semiconductor chip 130 are electrically connected to the opposing contact elements 213 of the electronic semiconductor chip 110, and the rear contact elements 230 of the semiconductor chip 130 are electrically connected to the opposing contact elements 260 of the carrier 160. The electrical connections are respectively established via a connection medium. As mentioned above, there is an electrical connection between the contact elements 260 of the carrier 160 and the electronic semiconductor chip 110. In this way, the light emitting semiconductor chip 130 can be electrically supplied by the semiconductor chip 110, by its contact elements 213, and by the contact elements 260 of the carrier 160, and can thereby be driven for light emission purposes. In this configuration, the electronic semiconductor chip 110 and the lateral carrier 160 of the semiconductor chip 110 are covered in certain areas by the semiconductor chip 130 present in the formation of a contact bridge, so that light emission from the semiconductor chip 130 can occur within the area of ​​the electronic semiconductor chip 110 and also laterally of the semiconductor chip 110.

[0088] With reference to FIG. 8, the optoelectronic component structure 101 can also include the electronic semiconductor chip 110 and a plurality of, for example three, semiconductor chips 130 mounted adjacent to one another on the carrier 160, as shown in the plan view of FIG. 12. In this case, the three semiconductor chips 130 are shown in dashed lines, and the pixelated light-emitting semiconductor chip 120 is omitted. According to FIG. 8, the three semiconductor chips 130 are contacted by contact elements 260 of the carrier 160 and contact elements 213 of the electronic semiconductor chip 110, respectively. As further shown in FIG. 12, the three contact elements 260 of the carrier 160 can be electrically connected to the contact elements 215 of the electronic semiconductor chip 110 by short conductor tracks 270 connecting the contact elements 260 and longer conductor tracks 270 guided to the contact elements 215, as well as by the connecting structures 181. In this way, a common potential can be applied to the contact elements 260 via the electronic semiconductor chip 110, and a connection between the contact elements 215 and the contact elements 260 of the carrier 160 can be established. Furthermore, the semiconductor chip 110 can apply an additional potential to each of its contact elements 213. As a result, the three light-emitting semiconductor chips 130 can be driven for light emission purposes, respectively.

[0089] In the optoelectronic module 100, the optoelectronic component structure 101 may be mounted adjacent to a pixelated light emitting semiconductor chip 120 on an electronic semiconductor chip 110 and may include a light emitting component contacted by the latter. This is shown, for example, in Fig. 5 with a semiconductor chip 130 shown in dashed lines and arranged next to the semiconductor chip 120. In this case, the associated semiconductor chip 130 may be contacted via contact elements 212, 213 of the electronic semiconductor chip 110 and in this regard may be electrically driven by the semiconductor chip 110.

[0090] In one possible development, such a light-emitting component can furthermore protrude beyond the electronic semiconductor chip 110 and also cover the carrier 160 in a lateral area of ​​the semiconductor chip 110, so that light emission can also be triggered laterally of the semiconductor chip 110. For illustrative purposes, Figs. 9 and 13 show in cross section and plan view a configuration realized for an optoelectronic module 100. The optoelectronic component structure 101 here comprises two light-emitting semiconductor chips 130, 132, in each case with two rear contact elements 230, 231 arranged next to the pixelated light-emitting semiconductor chip 120 (omitted in Fig. 13). The semiconductor chip 132 has a corresponding horizontal configuration to the semiconductor chip 130 and differs from it by a different plan view shape with a larger lateral dimension and by a different arrangement of the contact elements 230, 231. The rear contact elements 231 of the semiconductor chip 132 are electrically connected to the opposing contact elements 213 of the electronic semiconductor chip 110 (see Fig. 9 and Fig. 13), and the further rear contact elements 230 (not shown) of the semiconductor chip 132 are electrically connected to the further opposing contact elements 212 of the semiconductor chip 110 (see Fig. 13). The connections are established via respective connection media. In the case of the other semiconductor chip 130, here via the contact elements 260 of the carrier 160 and the further contact elements 213 of the electronic semiconductor chip 110, there is an arrangement and contact as described above with reference to Fig. 8. In this case, the contact elements 260 of the carrier 160 are connected to the contact elements 215 of the electronic semiconductor chip 110 via the conductor tracks 270 and the connection structures 181. In operation, corresponding potentials can be applied to the contact elements 212, 213, 260 by the semiconductor chip 110 in order to drive the semiconductor chips 130, 132 for emitting light.

[0091] As shown in FIG. 9, the light-emitting semiconductor chip 132 protruding beyond the electronic semiconductor chip 110 may additionally be mounted on the carrier 160. In this case, the semiconductor chip 132 and the carrier 160 are connected to each other purely thermally conductively, as illustrated by a layered thermal connection structure 190 in FIG. 9. By means of the thermal connection structure 190, the heat dissipation during operation of the semiconductor chip 132 may further be enabled by the carrier 160. The thermal connection structure 190 may include, among other things, a connection medium 180 in the form of a solder. The connection structure 190 may also adopt a configuration as will be further described below in connection with FIG. 25. In the case where a multi-partite configuration of the carrier 160 corresponding to FIG. 7 is present, a connection to further carrier parts 163 may be established by the connection structure 190.

[0092] For the optoelectronic module 100, a design may be considered in which the optoelectronic component structure 101 includes one or more light-emitting semiconductor chips with contact elements arranged on both sides, as illustrated with reference to Fig. 1. For illustration purposes, Figs. 14 and 15 show a configuration that achieves this effect for the optoelectronic module 100 in cross section and plan view. In this case, the optoelectronic component structure 101 includes a number of light-emitting semiconductor chips 130, 140, 141, 142 arranged next to a pixelated light-emitting semiconductor chip 120. Note that in the case of a semiconductor chip 130 consisting only of rear contact elements (not shown) that contact the electronic semiconductor chip 110 and the carrier 160, a configuration corresponding to Fig. 8 may also be used.

[0093] The other light-emitting semiconductor chips 140, 141, 142 are realized according to the vertical configuration described with reference to FIG. 1 and each have a rear contact element 230 and a front contact element 231, as shown in FIG. 14. The semiconductor chips 140, 141, 142 differ from each other due to different planar shapes and lateral dimensions. The rear contact elements 230 of the semiconductor chips 140, 141, 142 are each electrically connected to the opposite contact elements 213 of the electronic semiconductor chip 110 via a connection medium. Furthermore, the semiconductor chips 140, 141, 142 protrude beyond the electronic semiconductor chip 110 and thereby cover the carrier 160 in areas lateral to the semiconductor chip 110, so that during operation the semiconductor chips 140, 141, 142 can cause light emission in the area of ​​the electronic semiconductor chip 110 and lateral to it. With respect to the carrier 160, the semiconductor chips 140, 141, 142 may further be thermally conductively connected to the carrier 160 and thereby mounted on the carrier 160. Figure 14 illustrates this configuration of the semiconductor chip 140 connected to the carrier 160 by a layered thermal connection structure 190. Such a configuration is also feasible for the other semiconductor chips 141, 142.

[0094] As further shown in FIG. 14, the front contact elements 231 of the light-emitting semiconductor chips 140, 141, 142 are jointly electrically connected to the contact elements 260 of the carrier 160 by the optoelectronic module 100, which comprises a planar contact layer 187 connected to the contact elements 231, 260. The contact layer 187, not shown in FIG. 15, can at least partially cover the contact elements 260 and the semiconductor chips 140, 141, 142. The contact layer 187, also called PI contact (planar interconnect), can be transparent and for this purpose can be realized in the form of an ITO layer (indium tin oxide). The contact elements 260 of the carrier 160 can include an elongated shape in a plan view and are further electrically connected to the electronic semiconductor chip 110 in a suitable manner, so that the front contact elements 231 of the semiconductor chips 140, 141, 142 can be jointly electrically acted on by the semiconductor chip 110 by the contact elements 260 and the contact layer 187. The connection may be established by the conductor track structure 270 and the connecting structure 181 in accordance with the above description, such that the contact elements 260 of the carrier 160 may be electrically connected to the contact elements 215 (not shown) of the semiconductor chip 110. In operation, corresponding electrical potentials may be applied to the contact elements 213, 260 by the electronic semiconductor chip 110 to drive the semiconductor chips 130, 140, 141, 142 in each case for emitting light.

[0095] Contacting of the front contact elements 231 of the light emitting semiconductor chips configured in a vertical design may be realized not only by use of the contact layer 187 but also, for example, by forming wire contacts. For illustration purposes, Fig. 16 shows a further configuration of an optoelectronic module 100 having an electronic semiconductor chip 110 and a light emitting semiconductor chip 140 mounted on a carrier 160. The electrical connection between the front contact elements 231 of the semiconductor chip 140 and the contact elements 260 of the carrier 160 is established by means of bonding wires 185.

[0096] In the case of the optoelectronic module 100, the front face of the electronic semiconductor chip 110 is provided to terminate flush or substantially flush with the front face of the respective carrier 160 used, which is located laterally adjacent to the semiconductor chip 110. It is possible for the semiconductor chip 110 to protrude relative to the carrier 160 or for the carrier 160 to protrude relative to the semiconductor chip 110, and in this regard, as shown in the cross-sectional views of Figures 17 and 18, a level difference 330 can exist between these components 110, 160. The level difference 330 may be in the micrometer range or amount to up to 1 μm. As a result, the optoelectronic component structure 101 can be reliably mounted, for example, on the electronic semiconductor chip 110 and the carrier 160 without the risk of the semiconductor chip being damaged.

[0097] The carrier 160 of the optoelectronic module 100 may include a carrier material or base material that is non-conductive or insulating. This is the case, for example, when using ceramic materials such as silicon nitride, aluminum nitrite, or aluminum oxide, as described above. In such a configuration, the contact elements 260, 261 of the carrier 160 may be electrically connected to the electronic semiconductor chip 110 by, among other things, conductor structures of the carrier 160, such as conductor tracks 270 (see, for example, FIG. 11 ).

[0098] In a variant, the carrier 160 may be configured to be electrically conductive at least in the region of its front side and for this purpose may comprise an electrically conductive carrier material, for example a doped semiconductor material such as doped silicon. In such a configuration, it is possible to realize the electrical connection for one or more contact elements of the carrier 160 to the electronic semiconductor chip 110 not by a conductor or conductor track structure but in particular by the electrically conductive carrier material itself. With reference to Figs. 12 and 13, this may be considered, for example, for the contact element 260. In this case, the conductor track 270 may be omitted and the semiconductor chip 110 or the contact element 215 of the electronic semiconductor chip 110 may be electrically connected to the carrier 160 or to the electrically conductive carrier material such that a common potential may be applied to the contact element 260 by the semiconductor chip 110. For the connection between the carrier 160 and the semiconductor chip 110, the carrier 160 may comprise further contact elements which may be connected to the contact element 215 of the semiconductor chip 110 by a connection structure 181. The common potential may be an n-potential or a p-potential and a ground potential or a grounding potential. It is further contemplated that no electrical connection to the electronic semiconductor chip 110 is provided for one or more contact elements of the carrier 160, such as the contact elements 260 shown in Figures 12 and 13. Instead, a ground potential may be applied to these contact elements 260, or externally to the carrier 160. To this end, the carrier 160 may comprise further contact elements used for external contacts (not shown).

[0099] 19 shows a perspective view of an optoelectronic module 100 according to a further configuration, which can be used in an automobile headlight. The optoelectronic component structure 101 of the module 100 includes a pixelated light-emitting semiconductor chip 120 arranged on an electronic semiconductor chip 110. In FIG. 19, the semiconductor chip 120 is shown as see-through, thus showing the rear contact structure of the semiconductor chip 120 with a continuous contact element 220 and a separate contact element 221 arranged in a cutout of the contact element 220. The semiconductor chip 120 is mounted on the electronic semiconductor chip 110 in accordance with FIG. 5. Furthermore, the component structure 101 includes a plurality of light-emitting semiconductor chips 130, 131 arranged adjacent to the electronic semiconductor chip 110 and the semiconductor chip 120 on the carrier 160 and contacted by the semiconductor chip 110 and the carrier 160. The semiconductor chips 130, 131 are equipped with rear contact elements 230, 231 (not shown) and are mounted on the semiconductor chip 110 and the carrier 160 in a manner corresponding to FIG. 8. The semiconductor chips 130, 131 cover the carrier 160 to a greater extent than the electronic semiconductor chip 110. The semiconductor chips 120, 130, 131 are arranged relatively close to each other, which allows continuous illumination without visible boundaries. The semiconductor chip 131 has a different planar shape with a larger lateral dimension compared to the other semiconductor chips 130. In the case of the optoelectronic module 100 of FIG. 19, light emission can be generated in the area of ​​the electronic semiconductor chip 110 via the pixelated light-emitting semiconductor chip 120 and in the area of ​​the semiconductor chip 110 and its lateral areas via the light-emitting semiconductor chips 130, 131. A low beam light can be realized via the semiconductor chip 120, a high beam light via the semiconductor chip 130, and a turn indicator via the semiconductor chip 131.

[0100] FIG. 20 shows an excerpt of a further perspective view of the optoelectronic module 100 from FIG. 19 without the semiconductor chips 120, 130. This figure shows a contact structure of the electronic semiconductor chip 110, which includes a continuous contact element 210 and a separate contact element 211 arranged in its cutout, which contact structure cooperates with the pixelated light-emitting semiconductor chip 120. The figure further shows a contact element 213 of the semiconductor chip 110 and a contact element 260 of the carrier 160, which are provided for contacting the semiconductor chip 130. Such a pair of contact elements 213, 260 is likewise present for contacting the semiconductor chip 131. According to the above description, the contact element 260 of the carrier 160 can be electrically connected to the electronic semiconductor chip 110 in an appropriate manner (not shown). Furthermore, the contact element 210 and the contact element 260 can be n-type contacts, and the contact elements 211, 213 can be p-type contacts.

[0101] According to Fig. 20, the contact elements 260 of the carrier 160 include a larger lateral dimension than the contact elements 213 of the electronic semiconductor chip 110. The rear contact elements 230, 231 of the semiconductor chips 130, 131 contacted thereby include correspondingly different lateral dimensions (not shown). In this way, reliable heat dissipation is possible via the carrier 160 during operation of the light emitting semiconductor chips 130, 131. The semiconductor chips 130, 131 may thus be, for example, powerful light emitting diode chips.

[0102] In the case of the optoelectronic module 100 of Fig. 19 (also the configuration from the previous figures), light emission from the pixelated light emitting semiconductor chip 120 can only occur in the area of ​​the electronic semiconductor chip 110. Alternatively, configurations beyond the electronic semiconductor chip 110 are conceivable in order to cause the lateral area of ​​the semiconductor chip 110 to also emit light in response to the light emitting semiconductor chips 130, 131.

[0103] For illustration, FIG. 21 shows a perspective view of an optoelectronic module 100 configured for such purpose, representing a development of and substantially corresponding to the module 100 from FIG. 19. The optoelectronic module 100 of FIG. 21 comprises, instead of the pixelated light-emitting semiconductor chip 120, a pixelated light-emitting semiconductor chip 121 which projects laterally beyond the electronic semiconductor chip 110 and thereby covers the carrier 160 in the lateral overlap region 320 of the semiconductor chip 110. This configuration is also clear with the aid of the rear view of FIG. 22, the perspective extracts of FIG. 23 and FIG. 24 and the cross-sectional view of FIG. 25. In the rear view of FIG. 22, the carrier 160 is seen through and outlined, so that the rear contact elements 230 of the semiconductor chips 130, 131 and part of the rear contact structure of the semiconductor chip 121 are shown. In FIGS. 21 and 23, the pixelated light-emitting semiconductor chip 121 is shown as a see-through, so that the rear contact structure of the semiconductor chip 121 is shown. 23 and 24, the carrier 160 is omitted.

[0104] The rear contact structure of the pixelated light-emitting semiconductor chip 121 substantially corresponds to the rear contact structure of the pixelated light-emitting semiconductor chip 120 described above, i.e. the semiconductor chip 121 comprises a continuous contact element 220 with a cutout and a separate contact element 221 arranged in the cutout. The arrangement with the contact element 221 is present in the area of ​​the electronic semiconductor chip 110. With respect to the overlapping area 320, the semiconductor chip 121 further comprises another contact element 222 in the edge area, which here is similarly arranged in a cutout provided in the continuous contact element 220. The contact element 222 and the associated cutout of the contact element 220 comprise an elongated or elliptical shape and comprise larger dimensions than the other circular separate contact element 221 and the associated cutout of the contact element 220. This becomes clear with the aid of Figures 21 and 23, which show the rear contact structure of the semiconductor chip 121. In this case, the circular separate contact element 221 is arranged only in the area of ​​the electronic semiconductor chip 110. In contrast, the elongated separate contact element 222, which is likewise located in the region of the semiconductor chip 110, and the continuous contact element 220 of the semiconductor chip 121, project laterally further beyond the electronic semiconductor chip 110 and are thus also present in the overlap region 320. In this way, it is also possible to act electrically on the semiconductor stack of the semiconductor chip 121 via the contact elements 220, 222 of the semiconductor chip 121 in the overlap region 320. The contact element 222 can constitute a p-type contact in a manner corresponding to the contact element 221.

[0105] Similar to the pixelated light-emitting semiconductor chip 120 described above, the pixelated light-emitting semiconductor chip 121 includes a light-emitting region 125 and thus pixels 155 (see FIG. 3). In a manner corresponding to the elongated contact element 222, the light-emitting region 125 and thus the pixels 155 associated with the contact element 222 include an elongated shape and thus dimensions that are larger than those of the light-emitting regions 125 and pixels 155 associated with the other contact elements 221. Thus, as shown in FIG. 25, the semiconductor chip 121 includes light-emitting regions 125 and pixels 155 having different lateral dimensions, i.e., light-emitting regions 125 and pixels 155 having relatively small dimensions present in the region of the electronic semiconductor chip 110, and elongated light-emitting regions 125 and pixels 155 having larger lateral dimensions that are present in the edge region and protrude beyond the electronic semiconductor chip 110 in a manner responsive to the elongated contact element 222. Emission occurs in the region of the electronic semiconductor chip 110 by the smaller pixels 155, and emission can occur in the edge region of the semiconductor chip 110 and in the lateral or overlapping region 320 of the semiconductor chip 110 by the elongated pixels 155.

[0106] The electrical contact of the pixelated light-emitting semiconductor chip 121 is established with the electronic semiconductor chip 110 in a manner corresponding to the pixelated light-emitting semiconductor chip 120 described above, in that the continuous contact elements 210, 220 and the separate contact elements 211, 221, 222 of the two semiconductor chips 110, 121 are electrically connected to each other by a connection medium. In this case, the separate elongated contact element 222 of the semiconductor chip 121 is electrically connected to the opposing separate contact element 211 of the electronic semiconductor chip 110, which is arranged at the edge of the semiconductor chip 110, as will become clear with the aid of FIG. 25. The separate contact element 221 of the semiconductor chip 121 is electrically connected to the further opposing separate contact element 211 of the semiconductor chip 110. In FIG. 25, in line with the previous cross-sectional view, the continuous contact elements 210, 220 of the two semiconductor chips 110, 121 have been omitted for clarity. In this case, the successive contact elements 220 of the semiconductor chip 121 project laterally beyond the electronic semiconductor chip 110 and its successive contact elements 210 (see FIG. 23).

[0107] As shown in FIG. 25, the pixelated light-emitting semiconductor chip 121, which protrudes beyond the electronic semiconductor chip 110, may additionally be mounted on the carrier 160 in the overlap region 320 and for this purpose only be thermally conductively connected to the carrier 160 by a layered thermal connection structure 190. In this way, heat dissipation during operation of the semiconductor chip 121 may be enabled at this location via the carrier 160. As shown in the enlarged extract of FIG. 25, the connection structure 190 may comprise a connection medium 180, for example solder. In order to prevent the occurrence of undesired electrical connections or short circuits due to the connection medium 180, the semiconductor chip 121 may be provided with a rear insulating layer 191, for example in the form of an oxide or nitride layer, in the region of the thermal link. Furthermore, the carrier 160 may comprise a metal connection element 192, which may be connected to the semiconductor chip 121 or to the insulating layer 191 by the connection medium 180. If a multi-partite configuration of the carrier 160 corresponding to FIG. 7 is present, a connection to a further carrier part 163 may be established by the connection structure 190.

[0108] In the optoelectronic module 100, a configuration is conceivable in which the optoelectronic component structure 101 comprises a number of pixelated light-emitting semiconductor chips arranged adjacent to one another. These chips may be arranged only on the electronic semiconductor chip 110 (not shown). A further possible configuration, which represents a variant of the design described with reference to Figs. 21 to 25, is shown in the cross-sectional view of Fig. 26. In this case, the component structure 101 comprises a pixelated light-emitting semiconductor chip 120 arranged on the electronic semiconductor chip 110 and, laterally thereto, a further pixelated light-emitting semiconductor chip 122 mounted on the semiconductor chip 110 and on the carrier 160, which projects laterally beyond the electronic semiconductor chip 110 and thereby covers the carrier 160 in the lateral overlap region 320 of the semiconductor chip 110. The two semiconductor chips 120, 122 can be interpreted as a multi-partite configuration of the pixelated semiconductor chip 121 described above, as becomes clear from a comparison of Figs. 25 and 26.

[0109] In this case, the pixelated light-emitting semiconductor chip 122 protruding beyond the electronic semiconductor chip 110 includes the above-mentioned configuration realized for the semiconductor chip 121 with respect to the overlapping region 320, i.e., the separate elongated contact elements 222 and the associated elongated light-emitting regions 125 and pixels 155. The other semiconductor chip 120 comprises separate contact elements 221 and pixels 155, the dimensions of which are smaller than the dimensions of the contact elements 222 and pixels 155 of the semiconductor chip 122. The protruding semiconductor chip 122 further includes a continuous contact element 220 (not shown) including a notch in which the separate elongated contact elements 222 are arranged in a manner corresponding to the semiconductor chip 120. The separate contact elements 222 of the semiconductor chip 122 are electrically connected to the opposing separate contact elements 211 of the electronic semiconductor chip 110 arranged at the edge. The continuous contact element 220 of the protruding semiconductor chip 122 may be electrically connected to one or more contact elements (not shown) of the electronic semiconductor chip 110. The pixelated light-emitting semiconductor chip 122 is additionally mounted on the carrier 160 and thermally conductively connected to the carrier via a thermal connection structure 190. The other pixelated light-emitting semiconductor chip 120 is mounted on the electronic semiconductor chip 110 corresponding to Fig. 5. During operation, light emission occurs via the semiconductor chip 120 in the area of ​​the electronic semiconductor chip 110, and via the semiconductor chip 122 in the edge area of ​​the semiconductor chip 110, in the lateral or overlap area 320 of the semiconductor chip 110.

[0110] According to the configuration of the optoelectronic module 100 shown in FIG. 5 and the following figures, the electronic semiconductor chip 110 is provided with front contact elements. It is also possible for the semiconductor chip 110 to have contact elements on the front and rear sides. In this case, the front contact elements can be used to control the operation of the optoelectronic component structure 101 as explained above, and the rear contact elements can be used to supply electrical energy to the semiconductor chip 110 and to perform data communication with the semiconductor chip 110. For this purpose, the rear contact elements of the semiconductor chip 110 can be electrically connected to the contact elements and conductor structures of the carrier 160. It is also possible to use the rear contact elements of the semiconductor chip 110 to control the operation of the optoelectronic components of the component structure 101.

[0111] For the sake of illustration, Figures 27 to 29 show a plan view, a rear view and a cross-sectional view of an optoelectronic module 100, which represents the development of the module 100 configured as such and described with reference to Figures 21 to 25. In the rear view of Figure 28, the carrier 160 is shown partially in perspective. According to the above-mentioned configuration, the electronic semiconductor chip 110 comprises front contact elements 210, 211, 213, 215, which contact elements 211, 215 are shown in Figures 27 and 29. With regard to the contact elements 210, 211, 213 provided for contacting the pixelated light-emitting semiconductor chip 121 with the light-emitting semiconductor chips 130, 131, there is a configuration as shown in Figure 20. In this case, the semiconductor chips 130, 131 are additionally contacted by contact elements 260 of the carrier 160.

[0112] As shown in Figures 28 and 29, the electronic semiconductor chip 110 further comprises rear contact elements 217, 218. According to the configuration shown, the contact element 218 is configured in a circular shape, while the contact element 217 comprises an elongated shape. The carrier 160 comprises a recess 161 of the configuration shown here and a contact structure having contact elements 267, 268, 269 that cooperate with the rear contact structure of the electronic semiconductor chip 110, as shown in Figures 28 and 29. The contact elements 267, 268, 269 are arranged in the area of ​​the bottom of the recess 161 of the carrier 160, as shown in Figure 29. Only the contact elements 269 of the carrier 160 are shown in Figure 28, hereinafter they are also called extended contact elements 269. Another possible name is fan-out contacts. In the case of an electronic semiconductor chip 110 mounted in a recess 161 on a carrier 160, a portion of the contact element 218 of the semiconductor chip 110 and the contact element 217 are electrically connected to opposing contact elements 267, 268 of the carrier 160, and the contact element 218 present at the edge of the semiconductor chip 110 is electrically connected to an opposing extended contact element 269 of the carrier 160 by a connection medium.

[0113] Contact elements 267, 268 of the carrier 160 and the contact elements 217, 218 of the electronic semiconductor chip 110 connected thereto can be used to electrically supply and to perform data communication with the semiconductor chip 110. In this case, the carrier 160 may comprise further externally contactable contact elements (e.g. contact element 265 as shown in Fig. 11) on its front surface outside the recess 161, which are electrically connected to the contact elements 267, 268, for example by means of a suitable conductor structure of the carrier 160 (not shown).

[0114] As becomes clear from Figures 28 and 29, the extended contact elements 269 of the carrier 160 have an elongated shape and protrude laterally beyond the electronic semiconductor chip 110 at the rear face of the semiconductor chip 110. In this position, in the recess 161 of the carrier 160 laterally adjacent to the electronic semiconductor chip 110, further components of the optoelectronic component structure 101 can be mounted on the carrier 160 and contacted by the extended contact elements 269, so that the associated components can be electrically driven and have corresponding potentials applied thereto by the semiconductor chip 110 by the extended contact elements 269. As shown in dashed lines in Figures 27 and 28 and shown in Figure 29, the components contacted by the extended contact elements 269 can be further pixelated light-emitting semiconductor chips 122, as described with reference to Figure 26. In this case, the separate elongated contact elements 222 of the semiconductor chip 122 are electrically connected to the extended contact elements 269 of the carrier 160 by a connection medium. The continuous contact element 220 (not shown) of the semiconductor chip 122 may be electrically connected in a corresponding manner to one or more extended contact elements 269 of the carrier 160. In such a configuration, light may be emitted laterally of the electronic semiconductor chip 110 through the semiconductor chip 122. It should be noted that other light emitting semiconductor chips may be used in place of the semiconductor chip 122.

[0115] In the case of the optoelectronic module 100 shown in Figures 27 to 29, there are two mutually offset contact surfaces for the contacts of the optoelectronic component structure 101. One contact surface is formed by the front contact elements 210, 211, 213 of the electronic semiconductor chip 110 and the contact elements 260 of the carrier 160, and the further contact surface is formed by the extended contact elements 269 of the carrier 160. In a corresponding manner, the optoelectronic component structure 101 comprises components arranged in offset surfaces, i.e. the semiconductor chips 120, 130, 131 in one surface and the semiconductor chip 122 in the further surface.

[0116] Regarding the optoelectronic module 100 described with reference to FIGS. 27 to 29, a multi-partite configuration corresponding to FIG. 7 can also be considered with respect to the carrier 160. In this case, the contact elements 267, 268, 269 of the carrier 160 are provided on the base portion 162, and the contact element 260 of the carrier 160 used for the contacts of the semiconductor chips 130, 131 may be provided on another carrier portion 163. Also, the electronic semiconductor chip 110 may be mounted on a base portion 162 (not shown) together with a component or a semiconductor chip 122 that contacts via the extension contact element 269.

[0117] According to the configuration of the optoelectronic module 100 shown in FIG. 5 and the subsequent figures, a potential applied to the optoelectronic component structure 101 is provided, and thus the current supply to the component structure 101 is performed by the electronic semiconductor chip 110. For example, when a high-current operation having a current intensity of several amperes is provided for one or more components of the component structure 101, this can be achieved by the high-current design of the semiconductor chip 110. Also, instead of the electronic semiconductor chip 110, a high-current supply to one or more components may be performed via the carrier 160. As a result, the high-current design of the semiconductor chip 110 can be made unnecessary, and the semiconductor chip 110 can be realized cost-effectively.

[0118] For illustration, Fig. 30 shows a side view of an optoelectronic module 100 configured to produce that effect. The module 100 comprises a structure comparable to Fig. 6, where the optoelectronic component structure 101 according to the structure shown comprises, besides the pixelated light-emitting semiconductor chip 120, a number or two light-emitting semiconductor chips 130 mounted on a carrier 160. The semiconductor chips 130 may be high-power LEDs, i.e. relatively powerful and light-intensive light-emitting diode chips. For each of the light-emitting semiconductor chips 130, the carrier 160 comprises two contact elements 260, 261 electrically connected to rear contact elements 230, 231 of the semiconductor chip 130 via a connection medium. The contact elements 260, 261 are part of a current supply device 167 of the carrier 160, which is shown diagrammatically in Fig. 30, and which further comprises, besides the contact elements 260, 261, a current supply line 166 and a switch 165. In this case, the switch 165 is arranged in the line path assigned to the contact element 261. The switch 165 may for example be realized in the form of a transistor, such as a MOSFET (metal-oxide-semiconductor field-effect transistor). By means of a current supply 167, the semiconductor chip 130 or its contact elements 230, 231 may be connected separately from each other to an external current source 175 for high current operation. The carrier 160 or its current supply 167 is suitably connected to the current source 175 for this purpose.

[0119] In the case of the optoelectronic module 100 of Fig. 30, too, control of the operation of the light emitting semiconductor chip 130 is performed by the electronic semiconductor chip 110. For this purpose, the electronic semiconductor chip 110 is electrically connected to the switch 165 via the control line 170. In this way, the current supply of the light emitting semiconductor chip 130, and thus the activation and deactivation of the light emission from the semiconductor chip 130, can be triggered by a corresponding actuation of the switch 165 by the electronic semiconductor chip 110.

[0120] The control lines 170 may be conductor structures of the carrier 160 electrically connected in a suitable manner to the electronic semiconductor chip 110. In this case, the control lines 170 may be connected to contact elements 215 of the electronic semiconductor chip 110 by connection structures 181 in a manner comparable to the conductor tracks 270 shown in FIG. 11. The current supply lines 166 of the current supply devices 167 may be realized by conductor structures of the carrier 160. For the optoelectronic module 100 of FIG. 30, if a multi-partite configuration of the carrier 160 corresponding to FIG. 7 is provided, components such as, for example, the current supply devices 167 and the control lines 170 may be formed in further carrier parts 163.

[0121] The optoelectronic component structure 101 of the optoelectronic module 100 can be realized in such a way that light emission can take place in an area laterally surrounding the electronic semiconductor chip 110. This is for example the case in a further configuration of the optoelectronic module 100 shown in plan view in FIG. 31. In this case, the component structure 101 comprises a pixelated light-emitting semiconductor chip 120 arranged on the electronic semiconductor chip 110 and a number of light-emitting semiconductor chips 130 arranged next to the semiconductor chip 120 and surrounding the semiconductor chip 120. The pixelated light-emitting semiconductor chip 120 can correspond to the electronic semiconductor chip 110 in terms of lateral dimensions, such that the electronic semiconductor chip 110 can be hidden by the semiconductor chip 120, as shown in FIG. 31. The semiconductor chip 130 can be mounted on the carrier 160 in a manner corresponding to FIG. 6.

[0122] Further configurations are possible for the optoelectronic module 100. By way of example, the optoelectronic module 100 can be realized such that the optoelectronic component structure 101 comprises a number of light-emitting components or semiconductor chips arranged on the electronic semiconductor chip 110, additionally or instead of the pixelated light-emitting semiconductor chip 120. The components can include relatively small lateral dimensions and can be, for example, a semiconductor chip 130 with rear contact elements 230, 231. In this case, the electronic semiconductor chip 110 comprises a cooperating contact structure with contact elements for mounting the components or semiconductor chip 130. Corresponding to FIG. 5, the semiconductor chip 110 can in this case comprise contact elements 212, 213.

[0123] Furthermore, the configuration of the optoelectronic module 110 may be such that the optoelectronic component structure 101 is further extended with sensor technology to allow radiation detection. This may serve the purpose of capturing ambient light, for example, to perform an emission controlled by the electronic semiconductor chip 110 from the component structure 101 in cooperation with the respective ambient light present. Also, optical communication based on emission and radiation detection may be performed. In this case, it may be possible to switch between a transmit and receive mode with emission and radiation detection.

[0124] To illustrate the aforementioned features, Figs. 32 and 33 show a plan view and a cross-sectional view of an optoelectronic module 100 that realizes the effect. Fig. 32 shows three areas 310, 311, 312 of the module 100, where the areas 310, 311 are provided for light emission and the area 312 is provided for radiation detection. In the area 310, the electronic semiconductor chip 110 used to control the operation of the optoelectronic component structure 101 is also arranged on the carrier 160. In the area 310, moreover, a number of light-emitting components are mounted on the semiconductor chip 110, for example, the semiconductor chip 130 as shown in Fig. 33, and optionally also on the carrier 160. In the area 311, where light emission can occur laterally of the electronic semiconductor chip 110, a number of light-emitting components are similarly mounted only on the carrier 160, for example, the semiconductor chip 130 as shown in Fig. 33. In this case, a configuration corresponding to Fig. 6 may be present. In the regions 310, 311, the semiconductor chips 130 may be arranged adjacent to one another in a matrix in the form of rows and columns (not shown).

[0125] In the area 312 provided for radiation detection, the optoelectronic component structure 101 further comprises at least one radiation detection optoelectronic component 139 arranged on the carrier 160. The radiation detection component 139 may be a semiconductor chip including a photodiode structure. Furthermore, the radiation detection component 139 may comprise rear contact elements 230, 231 and may be mounted on the carrier 160 in a manner corresponding to FIG. 6. As shown in FIG. 33, with respect to the areas 311, 312, an electrical connection between the component 130, 139 and the electronic semiconductor chip 110 is established, by which the semiconductor chip 110 can control the operation of the component 130, 139 and can communicate measurement signals generated by the radiation detection component 139 to the semiconductor chip 110.

[0126] Alternatively, there is a possibility to perform radiation detection using the carrier 160 itself, by the carrier 160 being realized with one or more integrated photodiodes. For illustration, FIG. 34 shows a side view of an optoelectronic module 100 with a modified design compared to FIG. 33. In this case, the carrier 160 includes at least one integrated photodiode 169 in the radiation detection area 312. The photodiode 169 is suitably electrically connected to the electronic semiconductor chip 110 so that a measurement signal of the photodiode 169 can be transmitted to the semiconductor chip 110. The electrical connection can be established by a conductor structure of the carrier 160 and by a connection structure 181 in a manner corresponding to FIG. 11.

[0127] One possible modification of the configuration of Figures 32 to 34 may be to provide a light emitting semiconductor chip including a vertical design of region 310 and thus configure region 310 in a manner corresponding to, for example, Figures 14 and 15.

[0128] The configuration of the optoelectronic module 100 described with reference to the previous figures can be modified to the effect that radiation detection is also possible. By way of example, with respect to figures 10, 12, 13, 14, 19, 21, 27 and 31 it is conceivable that the semiconductor chip 130, the semiconductor chip 131, the semiconductor chip 132 or one of the semiconductor chips 140, 141, 142 is realised in the form of a radiation-detecting semiconductor chip or that the carrier 160 comprises at least one integrated photodiode 169.

[0129] In addition to the embodiments described above and illustrated in the figures, further embodiments are contemplated that may include further variations and / or combinations of features.

[0130] The carrier 160 can be realized in materials other than those mentioned above, and thus may be realized, for example, at least in part in the form of a printed circuit board (PCB) or a flexible printed circuit board.

[0131] Further modifications (not shown) may consist of optoelectronic modules 100 including optoelectronic component structures 101 including different numbers and / or geometric arrangements of optoelectronic components or semiconductor chips. This includes configurations of optoelectronic component structures 101 including only one light-emitting optoelectronic component. With reference to FIG. 21, for example, it is conceivable that component structure 101 comprises only pixelated light-emitting semiconductor chip 121 protruding beyond electronic semiconductor chip 110. With reference to FIG. 27, for example, multiple components may be provided that are arranged next to electronic semiconductor chip 110 and contacted by extended contact elements 269. With reference to FIG. 30, current supply device 167 of carrier 160 may be configured for electrical supply of different numbers of components or semiconductor chips 130 including only one component.

[0132] As explained with reference to Figures 14 to 16, by using one or more light emitting semiconductor chips 140, 141, 142 realized according to a vertical design, a modification not shown may be, for example, arranging the semiconductor chips 140, 141, 142 only on the electronic semiconductor chip 110 or only on the carrier 160. In this case, the rear contact elements of the semiconductor chips 140, 141, 142 may also be contacted by the contact elements of the carrier 160, and the front contact elements of the semiconductor chips 140, 141, 142 may be electrically connected to the contact elements of the electronic semiconductor chip 110 or the carrier 160 by contact layers or bonding wires.

[0133] Regarding the light emitting electronic components or semiconductor chips used, other designs may be used apart from the designs described and shown in the figures. As an example, the optoelectronic component structure 101 may include at least one light emitting diode chip, but also alternatively or additionally a laser diode chip or a surface emitter (VCSEL, vertical cavity surface emitting laser). For example, referring to FIG. 19 or FIG. 30, one or more semiconductor chips 130 may be such surface emitters.

[0134] Also, the semiconductor chip can be used as a thin film chip as shown in Figures 1 and 2. The semiconductor chip can also be designed to include a chip substrate (not shown) made of, for example, sapphire in addition to the semiconductor laminate 150.

[0135] Furthermore, it is conceivable that the optoelectronic component structure 101 additionally or instead of the one or more semiconductor chips comprises one or more packaged optoelectronic components. Such a component may include one or more light emitting semiconductor chips provided with a package. Furthermore, the component may comprise, for example, rear contact elements. In this regard, for example, the component 130 may be such a packaged component and may be mounted on the electronic semiconductor chip 110 and / or the carrier 160 in a manner corresponding to Figures 5, 6, 8, and 9.

[0136] The optoelectronic module 100 may further comprise further components not shown. These may include, for example, one or more optical units or optical components such as, for example, lenses. Such components may be suitably fixed on the carrier 160.

[0137] In addition to the application in headlights, the optoelectronic module 100 may be used or configured for other applications. These may include, for example, projectors, optical communication modules or display devices, such as, for example, microdisplays. With regard to the latter, the optoelectronic component structure 101 may be configured to generate light radiation of different colors. For this purpose, the component structure 101 may, for example, include a plurality of light-emitting components, for example semiconductor chips 130, arranged adjacent to one another, some of which are configured to generate, in each case, red light radiation, green light radiation and yellow light radiation. Furthermore, according to the above approach, at least a part of the light-emitting components may be arranged on the electronic semiconductor chip 110, and another part of the light-emitting components may be arranged laterally of the semiconductor chip 110, at least on a carrier 160 (not shown).

[0138] One exemplary manufacturing method, not shown, by which a plurality of optoelectronic modules 100 can be manufactured and various arrangement methods can be used, can be carried out as follows: An ASIC wafer is provided, from which a plurality of electronic semiconductor chips 110 is subsequently obtained. Light-emitting semiconductor chips or LED chips, for example a pixelated light-emitting semiconductor chip 120 and optionally further semiconductor chips, are arranged on the ASIC wafer, the latter being subsequently singulated so that a chip component is provided, comprising the electronic semiconductor chip 110 and one or more light-emitting semiconductor chips arranged thereon. The chip component is arranged on a submount wafer, from which a carrier 160 is subsequently obtained. This can be done by a chip-to-wafer method. The submount wafer may comprise a recess 161 in which the chip component or its electronic semiconductor chip 110 is arranged. The further light-emitting semiconductor chip is then arranged on the submount wafer. In this case, a number of semiconductor chips may be arranged together on the submount wafer, for example by stamping techniques. Depending on the design of the semiconductor chips, a further step may be performed, for example forming a planar contact layer 187 if semiconductor chips 140, 141, 142 are used. Optionally, additional elements, such as optical elements, can be disposed on the submount wafer. The submount wafer is then singulated, thereby providing separate optoelectronic modules 100. Such modules 100 can then be inserted into the housing of a headlight or projection or headlight module, for example.

[0139] Although the present invention has been more particularly illustrated and described in detail by means of preferred exemplary embodiments, the invention is nevertheless not limited to the disclosed examples, and other variations can be derived therefrom by those skilled in the art without departing from the scope of protection of the present invention. [Explanation of symbols]

[0140] 100: Optoelectronic module 101: Optoelectronic component structures 110: Electronic semiconductor chips 111: IC logic 115: Switch 120: Light-emitting semiconductor chip 121: Light-emitting semiconductor chip 122: Light-emitting semiconductor chip 125: Illuminating area 130: Light-emitting semiconductor chip 131: Light-emitting semiconductor chip 132: Light-emitting semiconductor chip 139: Light-emitting semiconductor chip 140: Light-emitting semiconductor chip 141: Light-emitting semiconductor chip 142: Light-emitting semiconductor chip 150: Semiconductor laminate 151: Semiconductor area 152: Active Zone 153: Semiconductor area 155:pixels 157: Beer 159: Conversion layer 160: Career 161: Recess 162: Base section 163: Carrier section 165: Switch 166: Current supply line 167: Current supply device 169: Photodiode 170: Control line 175: Current source 180: Connection medium 181: Connection structure 185: Bonding wire 187: Contact layer 190: Thermal connection structure 191: Insulating layer 192: Connection element 201: Contact element 202: Contact element 210: Contact element 211: Contact element 212: Contact element 213: Contact element 215: Contact element 217: Contact element 218: Contact element 220: Contact element 221: Contact element 222: Contact element 230: Contact element 231: Contact element 260: Contact element 261: Contact element 265: Contact elements 267: Contact elements 268: Contact elements 269: Extended contact element 270: Conductor track 271: Conductor track 300: Area 301: Area 310: Area 311: Area 312: Area 320: Overlap area 330:Level difference 350: Light emission 351: Primary light emission

Claims

1. An optoelectronic module (100) comprising an optoelectronic component structure (101) for emitting light having at least one optoelectronic component, an electronic semiconductor chip (110) for controlling the operation of said optoelectronic component structure (101), and a carrier (160), The electronic semiconductor chip (110) is disposed on the carrier (160); The optoelectronic component structure (101) is disposed on at least the electronic semiconductor chip (110); An optoelectronic module (100), wherein the optoelectronic component structure (101) is configured to cause light emission laterally to the electronic semiconductor chip (110) in areas covering the electronic semiconductor chip (110) and in areas not covering the electronic semiconductor chip (110).

2. 2. The optoelectronic module of claim 1, wherein the optoelectronic component structure (101) comprises optoelectronic components (121, 122, 130, 131, 132, 140, 141, 142) arranged on the electronic semiconductor chip (110) and the carrier (160) and covering in an area the electronic semiconductor chip (110) and the carrier (160) in a lateral direction of the electronic semiconductor chip (110).

3. 3. The optoelectronic module according to claim 1 or 2, wherein the optoelectronic component structure (101) comprises optoelectronic components (121, 122, 132, 140, 141, 142) which protrude laterally beyond the electronic semiconductor chip (110) and thereby cover the carrier (160) in a lateral region of the electronic semiconductor chip (110) and are thermally connected to the carrier (160) in this region.

4. 4. The optoelectronic module according to claim 1, wherein the optoelectronic component structure (101) comprises an optoelectronic component (120, 121, 122, 130, 131, 132, 140, 141, 142) arranged at least on the electronic semiconductor chip (110) and covering the electronic semiconductor chip (110) at least in an area, and the optoelectronic component structure (101) comprises at least one further optoelectronic component (121, 122, 130, 131, 132, 140, 141, 142) arranged at least on the carrier (160) and covering the carrier (160) at least in an area lateral to the electronic semiconductor chip (110).

5. The optoelectronic module according to any one of claims 1 to 4, wherein the optoelectronic component structure (101) comprises an optoelectronic component (120, 121, 122, 130, 132) having contact elements (220, 221, 222, 230, 231) on a rear surface thereof that are electrically connected to opposing contact elements (210, 211, 212, 213) of the electronic semiconductor chip (110).

6. 6. The optoelectronic module according to claim 1, wherein the optoelectronic component structure (101) comprises an optoelectronic component in the form of a pixelated light-emitting semiconductor chip (120, 121, 122) arranged on the electronic semiconductor chip (110), the pixelated light-emitting semiconductor chip (120, 121, 122) comprising contact elements (220, 221, 222) on a rear side thereof that are electrically connected to opposing contact elements (210, 211) of the electronic semiconductor chip (110).

7. 7. The optoelectronic module of claim 6, wherein the pixelated light-emitting semiconductor chips (121, 122) have contact elements (220, 222) on their rear surfaces that protrude laterally beyond the electronic semiconductor chip (110) and that protrude laterally beyond the electronic semiconductor chip (110) and are electrically connected to opposing contact elements (210, 211) of the electronic semiconductor chip (110).

8. The optoelectronic component structure (101) comprises contact elements optoelectronic components (130, 131) on their rear side, of which one rear contact element (231) of the optoelectronic component (130, 131) is electrically connected to an opposing contact element (213) of the electronic semiconductor chip (110) and a further rear contact element (230) of the optoelectronic component (130, 131) is electrically connected to an opposing contact element (260) of the carrier (160).

9. The optoelectronic module of any one of claims 1 to 8, wherein the optoelectronic component structure (101) comprises an optoelectronic component (130) having contact elements (230, 231) on a rear surface thereof that are electrically connected to opposing contact elements (260, 261) of the carrier (160).

10. The optoelectronic component structure (101) comprises an optoelectronic component (140, 141, 142) having a contact element (231) on its front side and a contact element (230) on its rear side, the rear contact elements (230) of the optoelectronic components (140, 141, 142) being electrically connected to opposing contact elements (213) of the electronic semiconductor chip (110) and the front contact elements (231) of the optoelectronic components (140, 141, 142) being electrically connected to contact elements (260) of the carrier (160).

11. 11. The optoelectronic module according to claim 10, wherein the front contact elements (231) of the optoelectronic components (140, 141, 142) and the contact elements (260) of the carrier (160) are electrically connected via a contact layer (187).

12. Optoelectronic module according to any one of the preceding claims, wherein the electronic semiconductor chip (110) is provided with contact elements (210, 211, 212, 213, 215, 217, 218) on its front and rear faces.

13. The optoelectronic module of any one of claims 1 to 12, wherein the carrier (160) is provided with extended contact elements (269) electrically connected to contact elements (218) of the electronic semiconductor chip (110) at a rear side of the electronic semiconductor chip (110) and projecting laterally beyond the electronic semiconductor chip (110) at the rear side of the electronic semiconductor chip (110), and the optoelectronic component structure (101) is provided with an optoelectronic component (122) arranged laterally adjacent to the electronic semiconductor chip (110) and provided with contact elements (222) electrically connected to the extended contact elements (169).

14. The optoelectronic module according to any one of claims 1 to 13, wherein the carrier (160) comprises a current supply device (167) for current supply of an optoelectronic component (130) of the optoelectronic component structure (101), the current supply device (167) comprising a switching element (165) for activating the current supply, the switching element being electrically connected to the electronic semiconductor chip (110) and controllable by the electronic semiconductor chip (110).

15. An optoelectronic module according to any one of the preceding claims, wherein the carrier (160) comprises a recess (161) in which the electronic semiconductor chip (110) is arranged.

16. The optoelectronic module according to any one of claims 1 to 15, wherein the carrier (160) comprises a base part (162) and a further carrier part (163), the electronic semiconductor chip (110) being arranged on the base part (162) and the further carrier part (163) being arranged on the base part (162) laterally adjacent to the electronic semiconductor chip (110).

17. The optoelectronic module of any one of claims 1 to 16, wherein the carrier (160) comprises at least one of the following carrier materials: silicon, ceramic.

18. The optoelectronic module of any one of the preceding claims, wherein the optoelectronic component structure (101) comprises a radiation detecting optoelectronic component (139).

19. An optoelectronic module according to any one of the preceding claims, wherein the carrier (160) comprises an integrated photodiode (169).

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