Organic light-emitting display device
By integrating a three-dimensional light guide structure and reflective auxiliary electrode within the organic light-emitting display device, the challenges of brightness, lifespan, and aperture ratio are addressed, resulting in enhanced performance and cost-effectiveness.
Patent Information
- Application Number
- JP2024566524
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-12-21
- Filing Date
- 2023-12-21
- Publication Date
- 2025-06-10
AI Technical Summary
The expansion of organic light-emitting display devices into the medium-sized display market is hindered by limitations in brightness, lifespan, and aperture ratio, particularly in the bottom-emission method.
The implementation of a three-dimensional light guide structure in conjunction with a reflective auxiliary electrode and a specific layer configuration within each pixel, which enhances light extraction and emission efficiency.
This configuration significantly improves the luminance and lifespan of the organic light-emitting display device, achieving more than double the performance of existing devices while reducing material costs and overcoming aperture ratio limitations.
Smart Images

Figure 2025517679000001_ABST
Abstract
Description
Technical Field
[0001] The embodiments relate to an organic light-emitting display device.
Background Art
[0002] In the information age, the display industry has been rapidly developing, and the display device is being converted from a liquid crystal display device to an organic light-emitting display device (OLED). The organic light-emitting display device has been expanding the market mainly for small displays such as portable products. However, since there are many problems to be overcome such as brightness and lifespan, the expansion into the medium-sized display market such as notebook computers and monitors has been delayed. Due to the limitations of the performance and price competitiveness of such products, there are significant technical barriers for the organic light-emitting display device to replace the liquid crystal display device.
[0003] By applying a technology that enables mass production in an in-line manner on a large-area substrate (for example, a substrate of 8th generation or higher) without using a Fine Metal Mask (FMM), not only a general solution to the above-described cost performance can be achieved, but also an improvement in productivity is expected, and price competitiveness can be ensured. Currently, the OLED TVs on the market are the most suitable structure for high-productivity production in large-area equipment as a bottom-emission display device applying a white organic light-emitting element (WOLED).
[0004] However, due to the limitation of the aperture ratio, which is the area ratio for light to pass through within a pixel, it is difficult to ensure the aperture ratio in an organic light-emitting display device with a high resolution at the level required for a medium-sized display in the bottom-emission method. Therefore, there are limitations in overcoming this by improving the performance of the TFT on the substrate and the driving circuit.
[0005] Therefore, in order to break through the limitations of such technologies, it is necessary to apply the WOLED method, as well as technologies for increasing the amount of light emitted from the organic light-emitting element and technologies for extracting the increased amount of light to the maximum extent. When such technologies are developed, not only can high-brightness and large-size transformations such as digital signage be achieved by improving the brightness and lifespan of the product, but also the organic light-emitting element application display device can be developed in the high-resolution product area. Therefore, the development of such epoch-making organic light-emitting display devices has become an urgent task.
Summary of the Invention
Problems to be Solved by the Invention
[0006] The embodiments are intended to solve the problems described above and other problems.
[0007] The embodiments aim to provide an organic light-emitting display device and a manufacturing method thereof for increasing the light-emitting area of the organic light-emitting element within a pixel to increase the amount of light emitted and improve the brightness and lifespan of the product.
[0008] The technical problems of the embodiments are not limited to those described in this item and include those that can be understood from the description of the invention.
Means for Solving the Problems
[0009] To achieve the problems described above, according to one aspect of an embodiment, an organic light-emitting display device includes a plurality of pixels, each of the plurality of pixels includes a plurality of sub-pixels, and each of the plurality of sub-pixels includes, respectively, a driving circuit, a protection layer on the driving circuit, a color resin layer on the protection layer, a planarization layer on the color resin layer, an auxiliary electrode on the planarization layer, a light guide having a three-dimensional structure on the auxiliary electrode, an organic light-emitting element on the light guide, and a sealing layer on the organic light-emitting element. The auxiliary electrode is connected to the driving circuit. The driving circuit includes a first opening region. The auxiliary electrode includes a second opening region and a reflection region. Light emitted from the organic light-emitting element is reflected in the reflection region and guided by the light guide to be emitted downward through the first opening region, the color resin layer, and the second opening region.
[0010] According to one aspect of an embodiment, an organic light-emitting display device includes a plurality of pixels, each of the plurality of pixels includes a plurality of sub-pixels, and each of the plurality of sub-pixels includes, respectively, a driving circuit, an auxiliary electrode on the driving circuit, a light guide having a three-dimensional structure on the auxiliary electrode, an organic light-emitting element on the light guide, a sealing layer on the organic light-emitting element, a color resin layer on the sealing layer, and a black resin layer on the sealing layer. The auxiliary electrode is connected to the driving circuit. The organic light-emitting element includes an anode electrode on the light guide, an organic light-emitting layer on the anode electrode, and a cathode electrode on the organic light-emitting layer. The organic light-emitting element includes an opening region and a reflection region. The color resin layer is located on the opening region. Light emitted from the organic light-emitting element is reflected in the reflection region and guided by the light guide to be emitted upward through the opening region and the color resin layer.
Effects of the Invention
[0011] In the bottom emission method, as the resolution increases, it becomes more difficult to commercialize due to the limitations of the aperture. However, assuming that the aperture ratio, i.e., the aperture area / pixel area, is about 20%, the surface area of the light guide body that is three-dimensional above the aperture can be configured to be more than three times the area of the aperture. When optimizing the structure of the light guide body and the reflector, the luminance and lifespan of the product can be improved by more than twice compared to the existing ones. Also, by increasing the contrast ratio against external light and removing the polarizing plate, the material cost can be reduced.
[0012] The additional scope of applicability of the embodiments will become apparent from the following detailed description. It should be understood that various changes and modifications within the spirit and scope of the embodiments should be clearly understandable to those skilled in the art, so the detailed description and specific embodiments such as the preferred embodiments are merely illustrative.
Brief Description of the Drawings
[0013]
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[0014] The sizes, shapes, numerical values, etc. of the components illustrated in the drawings do not match the actual ones. Also, even if the same component is illustrated with different sizes, shapes, numerical values, etc. between the drawings, this is merely an example on the drawings, and the same component can have the same size, shape, numerical values, etc. between the drawings.
Mode for Carrying Out the Invention
[0015] Hereinafter, the embodiments disclosed in this specification will be described in detail with reference to the accompanying drawings. However, the same or similar components regardless of the reference numerals will be given the same reference numbers, and overlapping descriptions thereof will be omitted. The suffixes "module" and "section" for the components used in the following description are given or mixed for ease of preparation of the specification and do not have meanings or roles that distinguish them from each other by themselves. Also, the accompanying drawings are for facilitating understanding of the embodiments disclosed in this specification, and the technical idea disclosed in this specification is not limited by the accompanying drawings. Also, when an element such as a layer, region, or substrate is referred to as being "on" another component, this includes cases where it is directly on the other element or there may be other intermediate elements therebetween.
[0016] Hereinafter, the embodiments of the embodiments will be described in detail with reference to the drawings.
[0017] The organic light-emitting display device according to the embodiment may include a white organic light-emitting element, but is not limited thereto. For example, the white organic light-emitting element may have a tandem structure in which two or more stacks each including two or more light-emitting layers that emit white light are vertically stacked. In contrast, the organic light-emitting display device according to the embodiment may also include an organic light-emitting element including a red organic light-emitting layer, a green organic light-emitting layer, and a blue organic light-emitting layer as a side-by-side structure.
[0018] The organic light-emitting display device can be classified into a bottom-emitting (BE) structure and a top-emitting (TE) structure according to the light emission direction. Hereinafter, although the description is limited to the organic light-emitting display device having a bottom-emitting structure, the embodiment can be similarly applied to the organic light-emitting display device having a top-emitting structure.
[0019] FIG. 1a is a plan view illustrating a conventional organic light-emitting display device. FIG. 1b is a plan view illustrating an organic light-emitting display device according to an embodiment.
[0020] As illustrated in FIGS. 1a and 1b, the pixel 2 may have a stripe structure including red, green, and blue sub-pixels 3.
[0021] Unlike the conventional one (FIG. 1a), the organic light-emitting display device according to the embodiment (FIG. 1b) may include a light guide body 310.
[0022] As illustrated in FIG. 1b, the organic light-emitting display device according to the embodiment may apply a white organic light-emitting element, and the pixel 2 may have a stripe structure including red, green, and blue sub-pixels 3. For example, when the resolution is 27 inches UHD, the size of the pixel may be a square with a side length of 160 μm, and the sub-pixel 3 may have a rectangle with a short side length of 53.3 μm and a long side length of 160 μm, but is not limited thereto. When the bottom-emitting structure is applied, the aperture ratio may be at least 20% or more. The aperture ratio may be the area of the aperture 5 / the area of the pixel 2.
[0023] As shown in FIG. 1b, the organic light-emitting display device according to the embodiment can include a plurality of pixels 2. The plurality of pixels 2 can each include a plurality of sub-pixels 3. The plurality of sub-pixels 3 may be arranged, for example, in the order of a red sub-pixel, a green sub-pixel, and a blue sub-pixel along the X-axis direction, but is not limited thereto. The plurality of sub-pixels 3 can each have a stripe structure along the Y-axis direction. For example, each of the plurality of sub-pixels 3 emits different color lights along the X-axis direction, but can emit the same color light along the Y-axis direction.
[0024] The organic light-emitting display device according to the embodiment can include a plurality of openings 5. At least one opening 5 can be located in the sub-pixel 3. The remaining region excluding the opening 5 may be a driving circuit portion 4.
[0025] The sub-pixel 3 can include a driving circuit portion 4 and an opening 5. The driving circuit portion 4 can be located not only in the sub-pixel 3 but also between adjacent sub-pixels 3. The driving circuit portion 4 can be referred to as a driving circuit region, and the opening 5 can be referred to as an opening region. For example, the region corresponding to the opening 5 can be defined as a first region, and the region corresponding to the driving circuit portion 4 can be defined as a second region. The driving circuit portion 4 can include a driving circuit (7 in FIG. 4) provided with various circuit elements for driving each sub-pixel 3, such as transistors, capacitors, wirings, etc. The first region excluding the second region corresponding to the driving circuit portion 4 can be the opening 5. The transistors of the driving circuit 7 can include a silicon-based or oxide-based semiconductor material.
[0026] FIG. 2 is a simplified schematic diagram of an example of the light guide body in FIG. 1b.
[0027] Referring to FIGS. 1b and 2, an optical waveguide body 30 having a three-dimensional structure is disposed on the opening 5 and the drive circuit portion 4. The optical waveguide body 30 can be referred to as an optical waveguide structure, an optical waveguide pattern, an optical direction adjusting member, etc. The size (or area) of the lower surface 31 of the optical waveguide body 30 may be smaller than the size (or area) of the sub-pixel 3 and larger than the size (or area) of the opening 5. The opening 5 can be located at the center of the lower surface 31 of the optical waveguide body 30, but can also be offset and positioned away from the center of the lower surface 31 of the optical waveguide body 30 according to the form of the three-dimensional structure of the optical waveguide body 30. According to the arrangement structure of the sub-pixels 3 in the pixel 2, the lower surface 31 of the optical waveguide body 30 can have various forms such as a square, a rectangle, an octagon, a circle, an ellipse, etc. The structure of the optical waveguide body 30 can also have various three-dimensional forms according to the form of the lower surface 31 and the upper surface 32 of the optical waveguide body 30. FIGS. 6 to 11 are exemplary diagrams of various three-dimensional structures of the optical waveguide body 30. As shown in FIGS. 6 to 11, the optical waveguide body 30 can have a lower surface 31. The optical waveguide body 30 can have an upper surface 32 and / or a side surface 33. Here, the upper surface 32, as the opposite surface of the lower surface 31, can have a straight surface or a round surface. The round surface may be formed not only on the upper surface 32 but also on the lower surface 33. The side surface 33, as the surface located between the lower surface 31 and the upper surface 32, can be inclined with respect to the lower surface 31 or have a round surface.
[0028] For example, the structure of the optical waveguide body 30 can have forms such as a square pyramid (FIG. 6, Pyramid), a frustum of a square pyramid (FIG. 7, Frustum of Pyramid), an ellipsoid cap (FIG. 8, Ellipsoid Cap), a frustum of an ellipsoid cap (FIG. 9, Frustum of Ellipsoid Cap), a circular cone (FIG. 10, circular cone), a truncated circular cone (FIG. 11, Truncated circular cone), etc.
[0029] In order to increase the light extraction effect, it is effective to make the center of the opening 5 coincide with the center of the optical waveguide body 30.
[0030] FIG. 3 is a cross-sectional view taken along line A-A' of the organic light-emitting display device of FIG. 1a.
[0031] As shown in FIG. 3, a light path 36 is formed through which light generated by the organic light-emitting element 40 is emitted downward through the color resin layer 11, the substrate 1, etc.
[0032] FIG. 4 is a cross-sectional view showing the light guide body according to the first embodiment. For example, FIG. 4 is a cross-sectional view taken along line B-B' of the organic light-emitting display device of FIG. 1b.
[0033] Referring to FIGS. 1b and 4, the organic light-emitting display device according to the embodiment can include a substrate 1, a driving circuit 7, a protective layer 10, a color resin layer 11, a planarization layer 12, an auxiliary electrode 20, a light guide body 30, an organic light-emitting element 40, a sealing layer 50, etc. The organic light-emitting display device according to the embodiment can also include more or fewer components than this.
[0034] A driving circuit portion 4 and a plurality of openings 5 are defined on the substrate 1. For example, the sub-pixel 3 can include at least one opening 5. The remaining region of the sub-pixel 3 excluding the opening 5 may be the driving circuit portion 4. The driving circuit 7 may be formed in the driving circuit portion 4 and not necessarily in the opening 5. The driving circuit portion 4 can include transistors, capacitors, wirings, etc. The driving circuit portion 4 may be a region for defining the opening 5. That is, the remaining region excluding the opening 5 may be the driving circuit portion 4.
[0035] A protective layer 10 is disposed on the driving circuit 7, a color resin layer 11 is disposed on the protective layer 10, and a planarization layer 12 is disposed on the color resin layer 11.
[0036] An auxiliary electrode 20 is disposed on the planarization layer 12. The auxiliary electrode 20 is connected to the driving circuit 7 through the through holes 13 of the planarization layer 12 and the protective layer 10. For example, the auxiliary electrode 20 is electrically connected to the drain electrode (or source electrode) of the transistor of the driving circuit 7.
[0037] The auxiliary electrode 20 can have a double structure or a triple structure. For example, the auxiliary electrode 20 is composed of a double structure or a triple structure including a first metal film 21, a second metal film 22, etc. The first metal film 21 is connected to the drain electrode of the transistor of the driving circuit 7 through the through hole 13. The second metal film 22 can be made of a metal with excellent reflection characteristics. By reflecting light by the second metal film 22 and emitting it downward through the light guide body 30 and the opening 5, the light extraction efficiency is improved.
[0038] A light guide body 30 (LGB) is disposed on the auxiliary electrode 20. An organic light emitting element 40 is disposed on the light guide body 30. A sealing layer 50 is disposed above the organic light emitting element 40.
[0039] A driving circuit 7 including a transistor, a capacitor, wiring, etc. is formed on the substrate 1. The driving circuit 7 can be formed using a semiconductor process. The opening 5 can include an opening region 5a (hereinafter referred to as the first opening region). The first opening region 5a is defined by the driving circuit 7. That is, the region where the driving circuit 7 is not formed in each sub-pixel 3 is defined as the first opening region 5a. The size of the first opening region 5a may be equal to or less than the size of the opening 5. For example, light can travel through the first opening region 5a to the substrate 1. For example, light may be blocked by the driving circuit 7 and unable to travel to the substrate 1. The driving circuit 7 can include a transistor, a capacitor, wiring, etc. The transistor can include a silicon-based or oxide-based transistor. The transistor can include all of a silicon-based transistor and an oxide-based transistor. In such a case, a switching transistor, for example, a scan transistor, can include an oxide-based transistor, and the driving transistor can include a silicon-based transistor.
[0040] The protective layer 10 can be made of an inorganic film. For example, the protective layer 10 can be made of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer film thereof.
[0041] The color resin layer 11 can be made of a color filter material in which a pigment is contained in the resin.
[0042] The planarization layer 12 can be made of an organic film such as, for example, an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. The planarization layer 12 can also have a multilayer structure of an organic film and an inorganic film such as a silicon oxide film (SiOx) or a silicon nitride film (SiNx).
[0043] The auxiliary electrode 20 is disposed between the planarization layer 12 and the optical waveguide body 30. The auxiliary electrode 20 is connected to the drain electrode of the transistor of the driving circuit 7 through the through hole 13 of the planarization layer 12 and the protective layer 10. The auxiliary electrode 20 can have a function of electrically connecting the anode electrode 41 of the organic light-emitting element 40 to the driving circuit 7 and a function of reflecting a part of the light emitted from the organic light-emitting element 40. For example, the auxiliary electrode 20 can include a first layer containing Ti and Mo to improve the contact resistance characteristics with the drain electrode of the transistor, a second layer containing Ag, an Ag alloy, Al, or the like, which is a reflective metal having excellent reflection characteristics, on the first layer, and the like. A third layer such as ITO or IZO may be further included on the second layer to ensure processability and reliability. For example, the auxiliary electrode 20 can have a triple structure of ITO / (Ag or Ag alloy or Al) / (Ti or Mo) or a double structure of (Ag or Ag alloy or Al) / (Ti or Mo).
[0044] The auxiliary electrode 20 can include an opening region 5b (hereinafter referred to as a second opening region) and a reflection region 5r. The reflection region 5r can surround the second opening region 5b.
[0045] The second opening region 5b may be a region where the auxiliary electrode 20 is not formed. The reflection region 5r may be a region where the second metal film 22 of the auxiliary electrode 20 is formed as a region where light is reflected. The size (or area) of the second opening region 5b may be equal to or less than the size (or area) of the opening 5. Light is reflected inside the optical waveguide body 30 by the reflection region 5r of the auxiliary electrode 20.
[0046] For example, light can travel through the second opening region 5b, the color resin layer 11, and the first opening region 5a to reach the substrate 1. For example, the size (or area) of the color resin layer 11 may be larger than the size (or area) of the first opening region 5a or the second opening region 5b. Thereby, even when the light passes through the first opening region 5a or the second opening region 5b in an inclined direction, it always passes through the color resin layer 11, and desired color light can be emitted.
[0047] On the other hand, the first opening region 5a, the color resin layer 11, and the second opening region 5b can overlap vertically. The centers of the first opening region 5a, the color resin layer 11, and the second opening region 5b can coincide with each other, but it is not limited thereto.
[0048] The optical waveguide body 30 is disposed on the auxiliary electrode 20. The optical waveguide body 30 can be made of an organic film. For example, the optical waveguide body 30 can be made of a resin such as an acrylic-based resin or a polyimide-based resin. For example, the optical waveguide body 30 can be made of a color filter material such as red, green, or blue in which a pigment is dispersed in the resin. When the optical waveguide body 30 is formed of a color filter material, the color resin layer 11 may be omitted, but it is not limited thereto.
[0049] On the other hand, using the etching selectivity between the material selected for the optical waveguide body 30 and the material of the auxiliary electrode 20, the auxiliary electrode 20 is patterned using the optical waveguide body 30 as a mask. Therefore, the auxiliary electrode 20 is patterned to have the same shape and size as the lower surface 31 of the optical waveguide body 30. The alignment tolerance between the films affects the yield as the resolution increases. Therefore, the self-alignment of the auxiliary electrode 20 serving as a reflective film and the optical waveguide body 30 playing an optically important role is also effective in improving the performance of the product, that is, the organic light-emitting display device.
[0050] The size (or area) of the auxiliary electrode 20 and the size (or area) of the lower surface 31 of the light guide body 30 may be different. Depending on the presence or absence of an additional ashing process, the type of etching, etc., the size of the auxiliary electrode 20 can be smaller or larger than the size of the lower surface 31 of the light guide body 30 by within 2 μm, and it may be formed to horizontally protrude or recess at the same distance from all four corners of the light guide body 30.
[0051] The organic light-emitting element 40 is disposed on the light guide body 30. The organic light-emitting element 40 can include an anode electrode 41, a plurality of organic light-emitting layers 42, a cathode electrode 43, and the like. The plurality of organic light-emitting layers 42 are formed on the anode electrode 41, and the cathode electrode 43 is formed on the organic light-emitting layer 42. The anode electrode 41 and the organic light-emitting layer 42 can be separated between the sub-pixels 3. The organic light-emitting layer 42 can have a continuous stripe structure without being separated between the sub-pixels 3 along the Y-axis direction as shown in FIG. 1b. The cathode electrode 43 may be commonly disposed for all the pixels 2 or all the sub-pixels, but is not limited thereto.
[0052] The organic light-emitting element 40 can surround the light guide body 30. Specifically, the anode electrode 41 can surround the entire surface of the light guide body 30. The anode electrode 41 can be made of a transparent conductive film (TCO) such as ITO or IZO that can transmit light.
[0053] The anode electrode 41 is connected to the auxiliary electrode 20 at the corner end of the light guide body 30.
[0054] Since the anode electrode 41 is formed by a sputtering method, it has good step coverage characteristics.
[0055] The anode electrode 41 is connected to the upper surface of the protruding region of the auxiliary electrode 20. As shown in FIG. 4, when the end of the auxiliary electrode 20 protrudes horizontally from the end of the light guide body 30, the anode electrode 410 is connected to the side surface and the upper surface of the end of the auxiliary electrode 20. For example, the anode electrode 41 is connected to the upper surface and the side surface of the second metal film 22 protruding from the light guide body 30. For example, when the auxiliary electrode 20 does not protrude horizontally, the anode electrode 41 is connected to the side surface of the auxiliary electrode 20.
[0056] On the other hand, the light emitted from the organic light-emitting element 40, specifically the organic light-emitting layer 42, is reflected by the reflection region 5r of the auxiliary electrode 20 and is multiply reflected by the interfaces between the light guide body 30 and the anode electrode 41, between the anode electrode 41 and the organic light-emitting layer 42, between the organic light-emitting layer 42 and the cathode electrode 43, etc. That is, the light is reflected by the light guide body 30 by the auxiliary electrode 20 on the lower part of the light guide body 30 and the organic light-emitting element 40 on the upper part of the light guide body 30, and a light path 36 is formed in which a larger amount of light is emitted downward through the second opening region 5b, the first opening region 5a, the first substrate 1, etc. by the light guide body 30. Therefore, by emitting a larger amount of light downward, the light extraction efficiency is significantly increased and the luminance is improved.
[0057] The encapsulation layer 50 is disposed on the organic light-emitting element 40. The encapsulation layer 50 can serve to prevent moisture or oxygen from penetrating into the organic light-emitting layer 42. For this purpose, the encapsulation layer 50 can include at least one inorganic film and at least one organic film. For example, it can have a triple structure composed of a first inorganic film, a resin film, and a second inorganic film. Here, the first inorganic film, the resin film, and the second inorganic film can be referred to as the first encapsulation film, the second encapsulation film, and the third encapsulation film, respectively.
[0058] On the other hand, as shown in FIG. 4, the organic light-emitting display device may not include a pixel definition layer (34, PDL in FIGS. 12 to 14).
[0059] When the anode electrode 41 is thick, current concentrates due to the etched steps at the corners of the anode electrode 41 during long-term driving, and there is a problem that an electrical short occurs due to the vertical leakage current (VCL) through the organic light-emitting layer 42 between the anode electrode 41 and the cathode electrode 43, resulting in dot defects. To solve such a problem, the pixel definition layer 34 is formed so as to surround the corner region of the anode electrode 41 between adjacent sub-pixels 3.
[0060] On the other hand, in the embodiment, even if the PDL 34 is not provided, in order to prevent dot defects, the thickness of the anode electrode 41 is set to 50 nm or less, and the step formed on the anode electrode 41 by being connected only to the etched cross-section, i.e., the side surface, of the auxiliary electrode 20 is removed.
[0061] FIG. 5 shows the undercut structure of FIG. 4 in detail.
[0062] As shown in FIGS. 4 and 5, the planarization layer 12 can be composed of a multilayer film. For example, the planarization layer 12 can have a double structure of a resin film 12a and an inorganic film 12b. The undercut structure 60 is formed by the planarization layer 12. For example, by using an inorganic film 12b having an etching rate greater than the etching rate of the resin film 12a, the inorganic film 12b is etched to form the undercut structure 60. The undercut structure 60 is formed along the lower part around the corner of the light guide body 30, i.e., the lower part around the auxiliary electrode 20, although the anode electrode 41 is connected to the auxiliary electrode 20 during the film formation stage.
[0063] After the undercut structure 60 is formed, if the PDL 34 is not added, the anode electrode 41 will not be formed along the undercut inner wall 61 of the undercut structure 60, that is, around the side surface of the inorganic film 12b of the planarization layer 12, due to the undercut structure 60, and the anode electrode 41 will be disconnected. After the undercut structure 60 is formed, if the PDL 34 is not added, in the formation stage of the organic light-emitting element 40, a layer made of a low-resistance material among the organic light-emitting materials, for example, the charge generation layer, will also be disconnected. As a result, the lateral current leakage (LCL) between sub-pixels is reduced.
[0064] FIGS. 12 to 14 are cross-sectional views showing another modification example of the light guide body according to the first embodiment. For example, as shown in FIGS. 12 to 14, the organic light-emitting display device can include the PDL 34.
[0065] Referring to FIGS. 12 to 14, in the embodiment, to meet the design goals of the product, the PDL 34 may be added if necessary in the process. As shown in FIG. 12, after the anode electrode 41 is formed in each sub-pixel, the PDL 34 is formed between the sub-pixels. By forming the trench 35 in the PDL 34 as shown in FIGS. 13 and 14, the lateral leakage current is reduced. The trench 35 can be referred to as a via or a through hole. One or more trenches 35 are provided, and its width is from 200 nm to 300 nm, which is the sum of the thicknesses of the first organic light-emitting stack and the first charge generation layer, and the depth may be more than twice the width.
[0066] As shown in FIG. 14, the trench 35 is formed to penetrate the PDL 34. In such a case, the organic light-emitting layer 42 can be in contact with the upper surface of the planarization layer 12 through the trench 35.
[0067] On one hand, as shown in FIGS. 4 and 12 to 14, an organic light-emitting layer 42 and a cathode layer 143 are disposed on top of the anode electrode 41, thereby forming an organic light-emitting element 40. The organic light-emitting layer 42 can include one or more of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. In this case, when a voltage is applied to the anode electrode 41 and the cathode electrode 43, holes and electrons move toward the light-emitting layer through the hole transport layer and the electron transport layer, respectively, and the holes and electrons can be combined with each other in the light-emitting layer to emit light.
[0068] The organic light-emitting layer 42 may be a white light-emitting layer that emits white light. In this case, the organic light-emitting layer 42 can have a tandem structure including two or more vertically stacked organic light-emitting stacks. Each of the organic light-emitting stacks can include a hole transport layer, at least one light-emitting layer, an electron transport layer, and the like. Also, a charge generation layer is formed between the organic light-emitting stacks. The charge generation layer can be composed of a pair of an n-type charge generation layer (nCGL) positioned adjacent to the lower organic light-emitting stack and a p-type charge generation layer (pCGL) positioned between the n-type charge generation layer and the upper organic light-emitting stack. The n-type charge generation layer can inject electrons into the lower organic light-emitting stack, and the p-type charge generation layer can inject holes into the upper organic light-emitting stack. The n-type charge generation layer can include an organic layer doped with an alkali metal such as Li, Yb, Na, K, or Cs, or an alkaline earth metal such as Mg, Sr, Ba, or Ra. The p-type charge generation layer may be formed by doping a dopant into the hole transport layer HTL.
[0069] A cathode electrode 43 is disposed on the organic light-emitting layer 42. The cathode electrode 43 may be a common layer formed commonly for all pixels. The cathode electrode 43 can include aluminum (Al), an aluminum alloy, silver (Ag), an alloy of silver (Ag), etc. that can reflect light. The cathode electrode 43 is formed thick with a thickness of 100 nm or more so that total internal reflection of light is sufficient during bottom emission, and at the same time, voltage drop of the power supply due to the resistance of the cathode electrode 43 can be prevented. The thicker the cathode electrode 43 is, the more the process margin of the undercut structure (60 in FIG. 4) increases, and the organic light-emitting display device can be easily manufactured.
[0070] A sealing layer 50 is disposed above the organic light-emitting element 40. The sealing layer 50 serves to prevent moisture or oxygen from penetrating into the organic light-emitting layer 42. For this purpose, the sealing layer 50 can include at least one inorganic film and at least one organic film. For example, it can have a triple structure composed of a first inorganic film, a resin layer, and a second inorganic film.
[0071] A part of the light emitted from the organic light-emitting element 40 disposed around the upper surface 32 and the side surface 33 of the light guide body 30 can pass through the second opening region 5b. Another part of the light emitted from the organic light-emitting element 40 is incident on the second metal film 22 of the auxiliary electrode 20 and is reflected again by the second metal film 22. The reflected light is incident on the cathode electrode 43 of the organic light-emitting element 40 through the light guide body 30 and is then reflected again. Such a process is repeatedly performed, and the light is continuously emitted through the opening 5. As a result, the light extraction efficiency is epoch-makingly increased and the luminance is improved.
[0072] It is a flowchart for explaining a manufacturing method of an organic light-emitting display device according to the first embodiment in FIG. 15. FIGS. 16 to 27 are cross-sectional views showing the manufacturing method of the organic light-emitting display device according to the first embodiment.
[0073] With reference to the cross-sectional structures of FIGS. 16 to 27, the manufacturing method for each step in FIG. 15 will be described in detail.
[0074] [S101 of FIG. 15] As shown in FIG. 16, a driving circuit 7 including transistors, capacitors, wirings, etc. is formed on a substrate 1. The substrate 1 can be made of glass or the like. The transistors can be made of, for example, a silicon-based semiconductor material, an oxide-based semiconductor material, or the like.
[0075] A first opening region 5a is formed by a region where the driving circuit 7 is not formed. Thereby, a lower emission type light path is formed in which light is emitted to the first substrate 1 through the first opening region 5a.
[0076] [S102 of FIG. 15] As shown in FIG. 17, a protective layer 10 is formed on the driving circuit 7. The protective layer 10 can be in contact with the upper surface of the substrate 1 through the first opening region 5a. The protective layer 10 can be made of an inorganic film or a multilayer film composed of an inorganic film and an organic film or inorganic films. The inorganic film can include, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or the like.
[0077] [S103 of FIG. 15] As shown in FIG. 18, after a color resin film is applied on the protective layer 10 and then patterned, a color resin layer 11 is formed. For example, a red color resin layer is formed for a red subpixel, a green resin layer is formed for a green subpixel, and a blue color resin layer is formed for a blue subpixel, but is not limited thereto. When the pixel is composed of RGBW subpixels, a transparent resin layer made of a transparent resin film is formed for a white subpixel.
[0078] The color resin layer 11 can have a size that covers at least the first opening region 5a. For example, the size (or area) of the color resin layer 11 may be larger than the size (or area) of the first opening region 5a. That is, the edge region of the color resin layer 11 can overlap perpendicularly with the driving circuit 7.
[0079] [S104 of FIG. 15] As shown in FIGS. 4, 5, and 19, after the planarization layer 12 is formed on the color resin layer 11 and then patterned, the through holes 13 are formed. The through holes 13 are formed in the color resin layer 11 and the protective layer 10. The through holes 13 are formed on the side portion of the color resin layer 11 adjacent to the color resin layer 11. The auxiliary electrode is connected to the drain electrode of the transistor of the driving circuit 7 through the through holes 13. In order to apply the undercut structure 60, the planarization layer 12 can include a resin layer 12a, an inorganic layer 12b, etc. The inorganic film 12b can be made of a material having an excellent etching selectivity ratio with the resin film 12a and / or the auxiliary electrode. For example, the etching rate of the inorganic film 12b may be greater than the etching rate of the resin film 12a and / or the auxiliary electrode. For example, the inorganic film 12b can be made of a silicon oxide film, a silicon nitride film, etc.
[0080] [S105 of FIG. 15] As shown in FIGS. 5 and 20, after the auxiliary electrode 20 is formed on the planarization layer 12 and then patterned, the second opening region 5b is formed. The region where the auxiliary electrode 20 is removed is formed as the second opening region 5b. For example, the second opening region 5b can be located on the color resin layer 11. For example, the second opening region 5b is formed to correspond to the first opening region 5a. For example, the area of the second opening region 5b may be the same as the area of the first opening region 5a, but is not limited thereto.
[0081] The auxiliary electrode 20 is connected to the drain electrode of the transistor of the driving circuit 7 through the through holes 13.
[0082] The color resin layer 11 can have a size that covers at least the second opening region 5b. For example, the area of the color resin layer 11 may be larger than the area of the second opening region 5b. That is, the edge region of the color resin layer 11 can overlap perpendicularly with the auxiliary electrode 20.
[0083] For example, in a sputtering equipment, a first metal film 21 such as Ti or Mo is coated with a thickness of 20 nm or more, and a second metal film 22 such as Ag, an Ag alloy or Al, which has excellent reflection performance, is coated with a thickness of 80 nm or more on the upper part of the first metal film 21, and an auxiliary electrode 20 is formed. On the upper part of the second metal film 22, a transparent conductive film such as ITO or IZO may be coated with a thickness of 50 - 100 nm for processability and reliability, but it is not limited thereto. The first metal film may be a contact metal film, and the second metal film may be a reflective metal film.
[0084] [S106 of FIG. 15] As shown in FIG. 21, an optical waveguide body 30 is formed on the auxiliary electrode 20. The optical waveguide body 30 can be made of a transparent acrylic or polyimide resin. When the optical waveguide body 30 is formed thick, the optical waveguide body 30 can be made of DFR (Dry Film Resin). Alternatively, the optical waveguide body 30 can be formed using a printing method according to the resolution.
[0085] The lower surface 31 of the optical waveguide body 30 can be in contact with the upper surface of the auxiliary electrode 20. The lower surface 31 of the optical waveguide body 30 can be in contact with the upper surface of the planarization layer 12 through the second opening region 5b.
[0086] The optical waveguide body 30 can be located on the color resin layer 11. The optical waveguide body 30 can cover the entire region of the color resin layer 11. For example, the size (or area) of the optical waveguide body 30 may be larger than the size (or area) of the color resin layer 11. The center of the optical waveguide body 30 and the center of the color resin layer 11 can coincide, but it is not limited thereto.
[0087] In addition to this, as shown in FIGS. 2 and 6 - 11, it can have various forms. For example, the opposite surface of the lower surface 31 of the optical waveguide body 30, that is, the upper surface 32 and / or the side surface 33 can have a square surface with a rounded surface bulging upward.
[0088] [S107 of FIG. 15] As shown in FIG. 22, the auxiliary electrode 20 is patterned using the pattern of the light guide body 30 as a mask. Therefore, the auxiliary electrode 20 is patterned to have the same shape and size as the lower surface 31 of the light guide body 30. Further, the auxiliary electrode 20 is separated between sub-pixels by the patterning of the auxiliary electrode 20.
[0089] Depending on the type and structure of the auxiliary electrode 20, it can be used in wet etching, dry etching, or a combination of the two, and an ashing process may be added.
[0090] A process may be added to form an undercut structure (60 in FIG. 4) in S107. For example, the light guide body 30 is additionally patterned so that the end of the auxiliary electrode 20 protrudes horizontally from the light guide body 30 as shown in FIG. 22. In such a case, the size (or area) of the auxiliary electrode 20 may be larger than the size (or area) of the lower surface 31 of the light guide body 30. On the other hand, as shown in FIG. 5, the undercut structure 60 is formed by selectively etching the resin layer 12a, the inorganic layer 12b, etc. of the planarization layer 12.
[0091] [S108 in FIG. 15] As shown in FIGS. 5 and 23, after the anode electrode 41 is formed on the light guide body 30 and the undercut structure 60 (FIG. 5), it is patterned. As a result, the anode electrode 41 is separated between sub-pixels by the patterning of the anode electrode 41.
[0092] The anode electrode 41 can be made of a transparent conductive material such as ITO or IZO that can transmit light.
[0093] A photoresist pattern is formed on the anode electrode 41. In order to remove the anode electrode 41 located between the sub-pixels, the photoresist pattern covers up to the lower surface 31 of the light guide body centered on the light guide body 30. The uncovered anode electrode 41 is removed using wet etching, and the anode electrode 41 is formed as shown in Fig. 23. Thereafter, the photoresist pattern is removed.
[0094] [S109 in Fig. 15] As shown in Fig. 24, after PDL34 is formed on the anode electrode 41, it is patterned so that PDL34 is formed between adjacent anode electrodes 41.
[0095] For the sake of convenience of explanation, Figs. 24 to 27 show a cross-sectional structure to which PDL34 is applied and a cross-sectional structure to which it is not applied.
[0096] In the embodiment, PDL34 may or may not be applied. The embodiment may also be in a mixed form in which PDL34 is partially applied and partially not applied.
[0097] [S110 in Fig. 15] As shown in Fig. 25, an organic light-emitting layer 42 is formed on the anode electrode 41. The organic light-emitting layer 42 may be a white light-emitting layer that emits white light. Therefore, the organic light-emitting layer 42 can have a tandem structure including two or more organic light-emitting stacks. A charge generation layer is formed between the organic light-emitting stacks. The charge generation layer 142b can be composed of a pair of an n-type charge generation layer and a p-type charge generation layer. Since the organic light-emitting layer 42 is formed by evaporation deposition, the step coverage characteristics are poor, and the organic light-emitting layer 42 does not penetrate and form on the undercut inner wall 61 of the undercut structure 60 shown in Fig. 5. Therefore, the first organic light-emitting stack 42a and the first charge generation layer 42b are formed so as to have a disconnection portion at the entrance of the undercut structure 60. By disconnecting not only the anode electrode 41 but also the first charge generation layer 42b, which is a low-resistance material of the organic light-emitting layer 42, the influence on adjacent pixels due to the leakage current flowing through the organic light-emitting layer 42 is minimized.
[0098] [S111 of FIG. 15] As shown in FIG. 26, a cathode electrode 43 is formed on the organic light-emitting layer 42. Thus, the organic light-emitting element 40 is constituted by the anode electrode 41, the organic light-emitting layer 42, and the cathode electrode 43.
[0099] The cathode electrode 43 is formed by depositing aluminum (Al), an Al alloy, or silver (Ag) by a vacuum deposition method. Since the cathode electrode 43 serves as a common electrode common to the entire pixel and the same voltage must be applied regardless of the position, the cathode electrodes 43 formed in all the pixels are electrically connected. The cathode electrode 43 is formed thick enough for stable power supply. The thicker the cathode electrode 43 is, the more advantageous it is so that the cathode electrode 43 is not disconnected by the undercut structure 60 shown in FIG. 4. For example, the cathode electrode 43 may be formed to be about 100 to 300 nm, but is not limited thereto. It is preferable that the height 62 of the undercut structure 60 does not exceed a certain height. For example, the cathode electrode 43 can be made not to exceed 400 nm.
[0100] In the embodiment, as an organic light-emitting display device having a bottom emission structure, the thickness of the cathode electrode 43 can be sufficiently formed to be about 100 nm. Therefore, compared with an organic light-emitting element device having a top emission structure in which the thickness of the cathode electrode 43 is 20 nm or less, in the organic light-emitting display device having a bottom emission structure, a sufficient process margin is ensured in the design of the undercut structure 60. It is sufficient to ensure that the undercut height (62 in FIG. 5) is about 200 nm or more, which is the sum of the thickness of the anode electrode 41 (50 nm or less) and the thickness of the first organic light-emitting stack (150 nm or less). For example, when the undercut height 62 is 400 nm or less, the anode electrode 41 is formed separately by the undercut structure 60, but the cathode electrode 43 is formed without being separated.
[0101] [S112 of FIG. 15] As shown in FIG. 27, a sealing layer 50 is formed on the cathode electrode 43. The sealing layer 50 serves to prevent oxygen or moisture from penetrating into the organic light-emitting layer 42 and the cathode electrode 43. For this purpose, the sealing layer 50 can include at least one inorganic film and at least one organic film. For example, as the inorganic film, a silicon oxide film or a silicon nitride film formed by PECVD can be used. For example, as the inorganic film, a film formed by ALD (Atomic Layer Deposition) or PECVD or an alumina (Al 2 O 3 ) film can be used. As the organic film, an epoxy resin, an acrylic resin, etc. can be used. An inorganic film may be additionally formed on the upper part of the organic film.
[0102] FIG. 28 is a cross-sectional view illustrating an organic light-emitting display device according to the second embodiment.
[0103] Referring to FIG. 28, the organic light-emitting display device according to the second embodiment can emit light in an upward emission mode.
[0104] The organic light-emitting display device according to the second embodiment can include a number of pixels. The pixels can include red (R), green (G), blue (B) sub-pixels or red (R), green (G), blue (B), white (W) sub-pixels. Each sub-pixel may have a light guide body 30 having a three-dimensional structure disposed thereon, and an organic light-emitting element 40, a sealing layer 50, etc. disposed on the light guide body 30. A color resin layer 11 and / or a black resin layer 53 is disposed on the upper part of the sealing layer 50.
[0105] An auxiliary electrode 20, a planarization layer 12, a protective layer 10, a driving circuit 7, a substrate 1, etc. are disposed under the light guide body 30. The planarization layer 12 and the protective layer 10 may be disposed either singly or both.
[0106] The light guide body 30 can be made of a transparent resin or an inorganic film on a transparent resin. The inorganic film can serve to prevent a reduction in the lifespan of the organic light-emitting element 40 due to the diffusion of residual organic components from the transparent resin. The inorganic film can serve as an etching stopper in the process of removing the cathode electrode 43 in the opening region 5c. The lower surface 31 of the light guide body 30 can have various forms such as a square, rectangle, octagon, circle, ellipse, etc. The side surface 33 of the light guide body 30 can have a straight surface or a round surface inclined with respect to the lower surface 31. The light guide body 30 can have a structure such as a frustum of a pyramid, a frustum of an ellipsoid cap, a truncated circular cone, etc.
[0107] The auxiliary electrode 20 is electrically connected to the drain electrode of the transistor of the driving circuit 7 through the through-hole 13 of the planarization layer 12 and the protective layer 10. The auxiliary electrode 20 is in contact with the driving circuit 7 and can have a triple structure composed of a first metal film such as titanium (Ti) and molybdenum (Mo), a second metal film with excellent reflection performance such as aluminum (Al), silver (Ag), and silver alloy, and a third metal film with transparency such as ITO and IZO in contact with the anode electrode 41. The auxiliary electrode 20 can have a double structure composed of a second metal film on the first metal film or composed of the second metal film and the third metal film. The auxiliary electrode 20 can have a single film of the second metal film.
[0108] The anode electrode 41, the organic light-emitting layer 42, and the cathode electrode 43 are arranged in this order on the light guide body 30, and the organic light-emitting element 40 is formed. The anode electrode 41 can include a transparent conductive film such as ITO and IZO.
[0109] The organic light-emitting layer 42 can have a plurality of organic light-emitting stack structures. For example, the organic light-emitting layer 42 can have a two-organic light-emitting stack structure, a three-organic light-emitting stack structure, a four-organic light-emitting stack structure, etc. The two-organic light-emitting stack structure is composed of a first organic light-emitting stack, a first charge generation layer, and a second organic light-emitting stack. The three-organic light-emitting stack structure is composed of a first organic light-emitting stack, a first charge generation layer, a second organic light-emitting stack, a second charge generation layer, and a third organic light-emitting stack. The first organic light-emitting stack, the second organic light-emitting stack, and the third organic light-emitting stack can each include a hole injection layer, a hole injection layer, a light-emitting layer, an electron transport layer, and an electron injection layer.
[0110] The cathode electrode 43 can have a single film of a metal such as aluminum (Al) or a Mg:Ag alloy or a dual structure combining single films on the uppermost organic light-emitting stack among the plurality of organic light-emitting stacks. The cathode electrode 43 can be a metal film having a reflection function, and the anode electrode can be a transparent conductive film.
[0111] The organic light-emitting element 40 can include an opening region 5c and a reflection region. The opening region 5c may be a region where the cathode electrode 43 is not formed. In such a case, the lower surface of the sealing layer 50 can be in contact with the upper surface of the organic light-emitting layer 42 in the opening region 5c.
[0112] The opening region 5c may be a region where the cathode electrode 43 and the organic light-emitting layer 42 are not formed. In such a case, the lower surface of the sealing layer 50 can be in contact with the upper surface of the anode electrode 41 in the opening region 5c.
[0113] The opening region 5c may be a region where the cathode electrode 43, the organic light-emitting layer 42, and the anode electrode 41 are not formed. In such a case, the lower surface of the sealing layer 50 can be in contact with the upper surface of the light guide body 30 in the opening region 5c.
[0114] The size (or area) of the color resin layer 11 may be larger than the size (or area) of the opening region 5c. As a result, even when light passes through the opening region 5c in an inclined direction, it always passes through the color resin layer 11, enabling the emission of desired color light.
[0115] Unlike the first embodiment (FIG. 4), in the second embodiment (FIG. 28), the opening regions may not be formed in the drive circuit 7 or the auxiliary electrode 20. This is because, in the top emission method as in the second embodiment (FIG. 28), light is emitted upward from the organic light-emitting element 40 or the light guide body 30, and an opening region for downward emission of light is unnecessary.
[0116] Therefore, the light emitted from the organic light-emitting element 40 is reflected upward by the auxiliary electrode 20 while being multiply reflected at the interfaces between the multiple layers within the organic light-emitting element 40. The light reflected in this way is continuously guided by the light guide body 30 at the opening region 5c, forming a light path 37 that exits on the opposite side of the substrate 1, i.e., through the color resin layer 11.
[0117] FIG. 29 is a flowchart for explaining a method of manufacturing an organic light-emitting display device according to the second embodiment.
[0118] The description of the manufacturing method from S101 to S111 described above in the manufacturing method of the first embodiment (FIG. 15) is omitted, and only the additional steps for manufacturing the organic light-emitting display device according to the second embodiment are described.
[0119] [S121, S122, and S123 in FIG. 29] An inorganic film is formed as the first sealing film 51 on the organic light-emitting element 40. After an organic film is continuously formed on the upper part thereof, the organic film formed in the opening region 5c is removed. Subsequently, since dry etching is used to form in the opening region 5c, after the inorganic film and the cathode electrode 43 are removed, the second sealing film 52 is formed on the first sealing film 51. The first sealing film 51 can include one organic film on at least one or more inorganic films. For example, as the inorganic film, a silicon oxide film or a silicon nitride film formed by a PECVD method can be used. For example, as the inorganic film, a film formed by an ALD (Atomic Layer Deposition) method or a film formed by PECVD or an alumina (Al 2 O 3 ) film can be used. As the organic film, an epoxy resin, an acrylic resin, etc. can be used. An inorganic film is formed as the second sealing film 52 on the upper part of the organic film. Thus, the sealing layer 50 is constituted by the first sealing film 51 and the second sealing film 52.
[0120] [S124 in FIG. 29] After the color resin layer 11 and the black resin layer 53 are applied on the upper part of the sealing layer 50, they are patterned.
[0121] After the black resin layer 53 is applied on the sealing layer 50, it is patterned. Thereby, the black resin layer 53 formed on the opening region 5c is removed.
[0122] The color resin layer 11 is applied on the black resin layer 53. Thereby, the color resin layer 11 is applied not only on the black resin layer 53 but also on the opening region 5c where the black resin layer 53 has been removed. The color resin layer 11 is patterned, and the color resin layer 11 applied on the black resin layer 53 is removed. Thus, the color resin layer 11 is formed on the opening region 5c located between the black resin layers 53. The black resin layer 53 can surround the color resin layer 53.
[0123] The color resin layer 11 can be made of red, green, and blue resins or red, blue, green, and transparent resins for each sub-pixel.
[0124] In the above, it has been described that the color resin layer 11 is applied and patterned after the black resin layer 53 is applied and patterned, but the order may be changed.
[0125] The above-described embodiments are examples of embodiments, and can be freely modified within the scope included in the spirit of the embodiments. Therefore, the embodiments include modifications of the embodiments within the scope of the appended claims and equivalents thereof.
[0126] The embodiments can be adopted in the display field for displaying images and information. The embodiments can be adopted in the display field for displaying images and information using an organic light-emitting element.
[0127] For example, the embodiments can be adopted in an HMD type display. Also, the embodiments can be adopted in TVs, signage, mobile terminals such as mobile phones and smart phones, computer displays such as notebook computers and desktops, automotive HUD (head-Up Display), display backlight units, XR (Extend Reality) displays such as AR, VR, and MR (mixed Reality), light source sources, etc.
Claims
1. comprising a plurality of pixels, each of the plurality of pixels comprising a plurality of sub-pixels, each of the plurality of sub-pixels respectively comprising, a driving circuit, a protective layer on the driving circuit, a color resin layer on the protective layer, a planarization layer on the color resin layer, an auxiliary electrode on the planarization layer, a light guide body having a three-dimensional structure on the auxiliary electrode, an organic light-emitting element on the light guide body, and a sealing layer on the organic light-emitting element, the auxiliary electrode being connected to the driving circuit, the driving circuit including a first opening region, the auxiliary electrode including a second opening region and a reflection region, light emitted from the organic light-emitting element being reflected in the reflection region and guided by the light guide body to be emitted downward via the first opening region, the color resin layer, and the second opening region, an organic light-emitting display device.
2. The organic light-emitting display device according to claim 1, wherein the first opening region, the color resin layer, and the second opening region overlap vertically.
3. The organic light-emitting display device according to claim 1, wherein an area of the color resin layer is larger than an area of the first opening region or an area of the second opening region.
4. Each of the plurality of sub-pixels includes an opening through which light passes, the opening including the first opening region and the second opening region, the organic light-emitting display device according to claim 1.
5. A lower surface of the light guide body is disposed in the second opening region, an opposite surface of the lower surface of the light guide body having a rounded surface or a chamfered surface bulging upward, the organic light-emitting display device according to claim 1.
6. including an undercut structure formed along a periphery of a lower portion of the auxiliary electrode, the organic light-emitting element including, an anode electrode on the light guide body, an organic light-emitting layer on the anode electrode, and a cathode electrode on the organic light-emitting layer, the anode electrode being made of a transparent conductive film, the cathode electrode being made of a reflective metal film, the anode electrode being in contact with a side surface of the auxiliary electrode and being disposed spaced apart from the planarization layer along an inner wall of the undercut structure by the undercut structure, the organic light-emitting display device according to claim 1.
7. including a pixel defining layer between adjacent anode electrodes, the pixel defining layer being disposed to surround a terminal of the anode electrode, the pixel defining layer including at least one or more trenches, the organic light-emitting display device according to claim 6.
8. The auxiliary electrode has a triple structure, a double structure, or a single film, The triple structure includes a first metal film such as titanium (Ti) and molybdenum (Mo) in contact with the driving circuit, a second metal film having reflection characteristics such as aluminum (Al), silver (Ag), and silver alloy, and a third metal film such as ITO and IZO having transparency in contact with the anode, The double structure includes the first metal film and the second metal film, or the second metal film and the third metal film, The single film is composed of the second metal film, and the organic light-emitting display device according to claim 1.
9. The light guide body is made of a transparent resin or an inorganic film on the transparent resin, The lower surface of the light guide body has a square, rectangular, octagonal, circular, or elliptical shape, The side surface of the light guide body has a straight surface or a round surface inclined with respect to the lower surface, The light guide body has a structure of a pyramid, a frustum of a pyramid, an ellipsoid cap, a frustum of an ellipsoid cap, a circular cone, or a truncated circular cone, The lower surface of the light guide body is in contact with the upper surface of the auxiliary electrode, and the organic light-emitting display device according to claim 1.
10. The organic light-emitting element has a plurality of organic light-emitting stack structures, The plurality of organic light-emitting stack structures are: A first organic light-emitting stack in contact with the anode electrode, A first charge generation layer on the first organic light-emitting stack, A second organic light-emitting stack on the first charge generation layer, A second charge generation layer on the second organic light-emitting stack, A third organic light-emitting stack on the second charge generation layer, The cathode electrode has a single film of a metal such as aluminum (Al) or a double structure combining a single film of an Mg:Ag alloy on the uppermost organic light-emitting stack among the plurality of organic light-emitting stacks, and the organic light-emitting display device according to claim 1.
11. The encapsulation layer is: A first encapsulation film which is a single film of alumina, silicon nitride film, silicon oxide film or an inorganic film double structure combining the single films, a second encapsulation film made of an organic film on the first encapsulation film, and a third encapsulation film having the same structure as the first encapsulation film on the second encapsulation film, and has a triple structure, and the organic light-emitting display device according to claim 1.
12. The organic light-emitting display device according to claim 1, wherein the color resin layer is made of red, green, and blue resins or red, green, blue, and transparent resins for each sub-pixel.
13. including a plurality of pixels, each of the plurality of pixels includes a plurality of sub-pixels, each of the plurality of sub-pixels respectively includes a driving circuit, an auxiliary electrode on the driving circuit, a light guide body having a three-dimensional structure on the auxiliary electrode, an organic light-emitting element on the light guide body, a sealing layer on the organic light-emitting element, a color resin layer on the sealing layer, a black resin layer on the sealing layer, and includes the auxiliary electrode is connected to the driving circuit, the organic light-emitting element an anode electrode on the light guide body, an organic light-emitting layer on the anode electrode, a cathode electrode on the organic light-emitting layer, and includes the organic light-emitting element includes an opening region and a reflection region, the color resin layer is located on the opening region, light emitted from the organic light-emitting element is reflected in the reflection region, guided by the light guide body, and emitted upward through the opening region and the color resin layer. The organic light-emitting display device.
14. The organic light-emitting display device according to claim 13, wherein the sealing layer contacts the upper surface of the organic light-emitting layer in the opening region.
15. The organic light-emitting display device according to claim 13, wherein the sealing layer contacts the upper surface of the light guide body in the opening region.
16. The lower surface of the light guide body contacts the auxiliary electrode, The opposite surface of the lower surface of the light guide body has a rounded surface or a squared surface bulging upward. The organic light-emitting display device according to claim 13.
17. The auxiliary electrode has a triple structure, a double structure, or a single film, The triple structure contacts the driving circuit and includes a first metal film such as titanium (Ti) and molybdenum (Mo), a second metal film having reflection characteristics such as aluminum (Al), silver (Ag), and silver alloy, and contacts the anode. A third metal film having transparency such as ITO and IZO, The double structure includes the first metal film and the second metal film, or includes the second metal film and the third metal film, The single film is made of the second metal film. The organic light-emitting display device according to claim 13.
18. The light guide body is composed of a transparent resin or an inorganic film on the transparent resin, The lower surface of the light guide body has a square, rectangle, octagon, circle or ellipse, and the side surface of the light guide body has a straight surface or a round surface inclined with respect to the lower surface. The light guide body has a structure of a quadrangular pyramid (Pyramid), a frustum of a quadrangular pyramid (Frustum of Pyramid), an ellipsoid cap (Ellipsoid Cap), a frustum of an ellipsoid cap (Frustum of Ellipsoid Cap), a circular cone (circular cone) or a frustum of a circular cone (Truncated circular cone). The organic light-emitting display device according to claim 13, wherein the lower surface of the light guide body is in contact with the upper surface of the auxiliary electrode.
19. The organic light-emitting element has a plurality of organic light-emitting stack structures. The plurality of organic light-emitting stack structures are as follows. A first organic light-emitting stack in contact with the anode electrode. A first charge generation layer on the first organic light-emitting stack. A second organic light-emitting stack on the first charge generation layer. A second charge generation layer on the second organic light-emitting stack. And a third organic light-emitting stack on the second charge generation layer. The organic light-emitting display device according to claim 13, wherein the cathode electrode has a single film of a metal such as aluminum (Al) or a Mg:Ag alloy or a double structure combining single films on the uppermost organic light-emitting stack among the plurality of organic light-emitting stacks.
20. The encapsulation layer has a triple structure composed of a first encapsulation film which is a single film of alumina, silicon nitride film, silicon oxide film or an inorganic film double structure combining the single films, a second encapsulation film composed of an organic film on the first encapsulation film, and a third encapsulation film having the same structure as the first encapsulation film on the second encapsulation film. The organic light-emitting display device according to claim 13.
21. The color resin layer is made of red, green, blue resin or red, green, blue, transparent resin for each sub-pixel. The organic light-emitting display device according to claim 13, wherein the black resin layer surrounds the color resin layer.
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