Organic light-emitting display device

Abstract

The organic light-emitting display device can include a substrate, an auxiliary electrode for each of a plurality of sub-pixels, a three-dimensional structure on the auxiliary electrode, an organic light-emitting element surrounding the three-dimensional structure, a sealing layer surrounding the organic light-emitting element, and a resin layer on the sealing layer. The organic light-emitting element can include an anode electrode surrounding the upper surface and the side surface of the three-dimensional structure and connected to the auxiliary electrode through the side surface of the three-dimensional structure, an organic light-emitting layer on the anode electrode, and a cathode electrode on the organic light-emitting layer.

Description

Technical Field

[0001] The embodiments relate to an organic light emitting display device.

Background Art

[0002] Recently, with the advent of the full-fledged information age, interest in display devices for processing and displaying large amounts of information has been rapidly increasing. In particular, the demand for users to use portable information media has been on the rise, and the display field has been rapidly developing. Correspondingly, various lightweight and thin flat panel display devices have been developed and attracted attention.

[0003] Among such flat panel display devices, head mounted display (HMD) type display devices have been attracting attention. In particular, active development has been carried out to utilize an organic light emitting display device (OLED) as an HMD type display device. An HMD type display device is worn in the form of a helmet or glasses, and a focus for an image is formed on the user's eyes, thereby realizing virtual reality (VR) or augmented reality (AR).

[0004] Such an HMD type display device is equipped with a high-resolution small OLED. The high-resolution small OLED includes a plurality of organic light emitting elements on a driving circuit formed using a wafer-based semiconductor process. On the other hand, when an HMD type display device is embodied in the form of glasses, a bright and clearer screen is required at a very small screen size. For this purpose, it is necessary to maximize the light amount from the organic light emitting element and its light extraction efficiency, and block light leakage between pixels or sub-pixels, thereby improving the image quality. The technology for improving the light extraction efficiency applicable to ultra-high resolution is expected to be widely applied to large screen display industries such as mobile devices and IT devices.

Summary of the Invention

Problems to be Solved by the Invention

[0005] The embodiments are intended to solve the aforementioned problems and other problems.

[0006] Another object of the embodiments is to provide an organic light-emitting display device capable of expanding the area of the organic light-emitting layer of the organic light-emitting element to improve luminance, preventing leakage current and light leakage between pixels or sub-pixels, and ensuring a clear image quality.

Means for Solving the Problems

[0007] In order to achieve the problems as described above, according to one aspect of the embodiments, an organic light-emitting display device includes a substrate including a plurality of pixels, each of the plurality of pixels including a plurality of sub-pixels, an auxiliary electrode for each of the plurality of sub-pixels, a three-dimensional structure on the auxiliary electrode, an organic light-emitting element surrounding the three-dimensional structure, a sealing layer surrounding the organic light-emitting element, and a resin layer on the sealing layer. The organic light-emitting element includes an anode electrode surrounding an upper surface and a side surface of the three-dimensional structure and connected to the auxiliary electrode through the side surface of the three-dimensional structure, an organic light-emitting layer on the anode electrode, and a cathode electrode on the organic light-emitting layer.

[0008] According to another aspect of the embodiment, the organic light-emitting display device includes a substrate including a plurality of pixels, each of the plurality of pixels including a plurality of sub-pixels, a driving circuit for each of the plurality of sub-pixels, a protective layer disposed on the driving circuit and including two or more protective films, an auxiliary electrode disposed on the protective layer and connected to the driving circuit through a through-hole of the protective layer, an anode separation structure provided along the periphery of the auxiliary electrode, a three-dimensional structure on the auxiliary electrode, an organic light-emitting element surrounding the three-dimensional structure, a sealing layer surrounding the organic light-emitting element, and a resin layer on the sealing layer. The organic light-emitting element includes an anode electrode surrounding the upper surface and side surface of the three-dimensional structure and connected to the auxiliary electrode through the side surface of the three-dimensional structure, an organic light-emitting layer on the anode electrode, and a cathode electrode on the organic light-emitting layer. The anode separation structure has an undercut structure formed by positioning the ends of each of the two or more protective films differently along the periphery of the corner of the auxiliary electrode to isolate the anode electrode.

[0009] According to still another aspect of the embodiment, the organic light-emitting display device includes a substrate including a plurality of pixels, each of the plurality of pixels including a plurality of sub-pixels, an auxiliary electrode for each of the plurality of sub-pixels, a three-dimensional structure on the auxiliary electrode, an organic light-emitting element surrounding the three-dimensional structure, a sealing layer surrounding the organic light-emitting element, a light guide layer on the sealing layer, and a resin layer on the sealing layer. The organic light-emitting element includes an anode electrode surrounding the side surface of the three-dimensional structure and connected to the auxiliary electrode through the side surface of the three-dimensional structure, an organic light-emitting layer on the anode electrode, and a cathode electrode on the organic light-emitting layer. The light guide layer is disposed on the side surface of the three-dimensional structure.

Advantages of the Invention

[0010] According to at least one of the embodiments, by arranging the organic light-emitting element on the surface of the three-dimensional structure, the light-emitting area can be increased epoch-makingly. In the case of a three-dimensional structure in the shape of a cube, the organic light-emitting elements are arranged on all the surfaces of the cube. In such a case, when the organic light-emitting elements are arranged on all the surfaces of the cube as compared with the case where the organic light-emitting elements are arranged on one surface of the cube, the light-emitting area is expanded by at least five times or more. Therefore, not only the luminance but also the lifespan is improved.

[0011] In addition, the first resin layer located on at least one side surface of the three-dimensional structure can prevent light leakage between pixels or sub-pixels and ensure a clear image quality. At this time, when a color resin is used as the first resin layer, an organic light-emitting display device with improved color purity can be provided.

[0012] In addition, an anode separation structure is provided to block light emission due to current leakage to adjacent pixels or sub-pixels, and a clearer image quality can be obtained.

Brief Description of the Drawings

[0013]

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[0014] The sizes, shapes, numerical values, etc. of the components illustrated in the drawings do not match the actual ones. Also, even if the same component is illustrated with different sizes, shapes, numerical values, etc. between the drawings, this is only an example on the drawings, and the same component can have the same size, shape, numerical values, etc. between the drawings.

Embodiments for Carrying Out the Invention

[0015] Hereinafter, the embodiments disclosed in this specification will be described in detail with reference to the attached drawings. However, components that are the same or similar regardless of the reference numerals will be given the same reference numbers, and overlapping descriptions thereof will be omitted. The suffixes "module" and "section" for the components used in the following description are given or mixed for ease of preparing the specification, and do not have meanings or roles that are distinct from each other by themselves. Also, the attached drawings are for facilitating the understanding of the embodiments disclosed in this specification, and the technical idea disclosed in this specification is not limited by the attached drawings. Further, when an element such as a layer, region, or substrate is referred to as being "on" another component, this includes cases where it is directly on the other element or where other intermediate elements may be present therebetween.

[0016] FIG. 1 is an exploded perspective view showing an organic light-emitting display device according to a first embodiment.

[0017] Referring to FIG. 1, the organic light-emitting display device according to the first embodiment has been mainly described as forming an organic light-emitting element on a wafer substrate formed using a semiconductor process, but it should be noted that it is not limited thereto. That is, an organic light-emitting display device manufactured on a glass substrate and composed of a glass substrate, or an organic light-emitting display device manufactured on a glass substrate but having a final product composed of a plastic substrate can also be included. The organic light-emitting display device can include a plurality of pixels. The plurality of pixels can each include a first subpixel, a second subpixel, a third subpixel, and the like. For example, the first subpixel may be a red subpixel, the second subpixel may be a green subpixel, and the third subpixel may be a blue subpixel. A substrate 100 on which a driving circuit composed of a transistor and a capacitor is formed can include a protective layer 110, an auxiliary electrode 120, a plurality of three-dimensional structures 130, and the like. The protective layer 110 can be referred to as a planarization layer 110 or the like in some cases.

[0018] Each of the plurality of three-dimensional structures 130 can correspond to one sub-pixel, but is not limited thereto. The three-dimensional structures 130 can have various forms as shown in FIGS. 2a to 2i. That is, it can have a tetrahedral form (FIG. 2a), a hexahedral form (FIG. 2b), an octahedral form (FIG. 2c), a columnar form such as a cylindrical form (FIG. 2d), a hemispherical or semi-elliptical spherical form (FIGS. 2e and 2f), a form in which the inner diameter decreases towards the top (FIGS. 2g to 2i), or a combined form thereof. Also, combinations of these three-dimensional structures above and below may be possible. For example, as shown in FIG. 2i, it may be formed by a combination of a cylinder (FIG. 2d) and a hemisphere (FIG. 2e).

[0019] Different three-dimensional structures 130 may be combined so that sub-pixels are efficiently arranged within a unit pixel. For example, as shown in FIG. 3, at least one rectangular prism-shaped three-dimensional structure 130-5 is arranged within four adjacent octagonal prism-shaped three-dimensional structures 130-1 to 130-4. One pixel 102, that is, a unit pixel, may be defined by the four octagonal prism-shaped three-dimensional structures 130-1 to 130-4 and the rectangular prism-shaped three-dimensional structure 130-5. Each of the four octagonal prism-shaped three-dimensional structures 130-1 to 130-4 and the rectangular prism-shaped three-dimensional structure 130-5 can correspond to one sub-pixel 103. For example, the three-dimensional structure 130-1 can correspond to a red sub-pixel, the three-dimensional structures 130-2 and 130-4 can correspond to green sub-pixels, and the three-dimensional structures 130-3 and 130-5 can correspond to blue sub-pixels. For example, the three-dimensional structure 130-1 can correspond to a red sub-pixel, the three-dimensional structures 130-2 and 130-4 can correspond to green sub-pixels, the three-dimensional structure 130-3 can correspond to a blue sub-pixel, and the three-dimensional structure 130-5 can correspond to a transparent sub-pixel that does not emit any color.

[0020] Referring back to FIG. 1, an organic light-emitting element 140 including an anode electrode, an organic light-emitting layer, a cathode electrode, etc. is disposed on the three-dimensional structure 130. A sealing layer 150 is disposed on the organic light-emitting element 140, and a first resin layer 160 and a second resin layer 170 are disposed on the sealing layer 150. Other layers may be added as additional functions and purposes on the second resin layer 170. For example, a planarization layer, an antireflection layer, etc. may be disposed on the second resin layer 170.

[0021] FIG. 4 is a cross-sectional view taken along the A-A' line of the organic light-emitting display device according to the first embodiment.

[0022] Referring to FIGS. 1 and 4, a driving circuit 101 including a driving transistor, a capacitor, etc. is formed on a substrate 100. Such a driving circuit 101 can be formed using semiconductor processes. The substrate 100 can include a silicon wafer, a plastic substrate, etc. A protective layer 110 is disposed on the driving transistor.

[0023] The protective layer 110 may be a single layer of an inorganic film or an organic film. The protective layer 110 may be a multilayer of inorganic films, a combination of a multilayer of inorganic films and an organic film. For example, the protective layer 110 can be made of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer of these. The protective layer 110 may be composed of a multilayer structure of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin and an inorganic film such as a silicon oxide film (SiOx) and a silicon nitride film (SiNx).

[0024] The drain electrode of the transistor is connected to the auxiliary electrode 120 through the through-hole 114 of the protective layer 110. The auxiliary electrode can be used as a terminal or pad where power and signals are applied or for inspection purposes in a pixel outer region including a plurality of sub-pixels.

[0025] The auxiliary electrode 120 can function as an electrical connection between the drain electrode of the transistor and the anode electrode 141 of the organic light-emitting element 140 and reflect a part of the light emitted from the organic light-emitting element 140. The auxiliary electrode 120 is formed of a first metal film such as Ti, Mo, etc. to improve contact resistance characteristics, and can include a second metal film such as Ag, Ag alloy, or Al with excellent reflection performance on the first metal film. On the second metal film, a third metal film such as ITO or IZO is formed for processability and reliability. Therefore, the auxiliary electrode 120 can have a triple structure of, for example, ITO / (Ag or Ag alloy or Al) / (Ti or Mo), or a double structure of (Ag or Ag alloy or Al) / (Ti or Mo).

[0026] The three-dimensional structure 130 is disposed on the auxiliary electrode 120. The three-dimensional structure 130 can be made of an inorganic film or an organic film. When the three-dimensional structure 130 is an inorganic film, it can be made of, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer film thereof. When the three-dimensional structure 130 is an organic film, it may be a resin such as an acrylic-based or polyimide-based resin, or a resin for a red, green, or blue color filter in which a pigment is dispersed in the resin. The three-dimensional structure 130 can have a shape in which the inner diameter decreases towards the upper part, and the inclination θ1 thereof may be 60 degrees to 90 degrees. The inclination can be defined as the angle of the side surface with respect to the lower surface of the three-dimensional structure 130.

[0027] The auxiliary electrode 120 is patterned using the etching selectivity between the material of the three-dimensional structure 130 and the material of the auxiliary electrode 120 as a mask for the pattern of the three-dimensional structure 130. Therefore, the auxiliary electrode 120 may be patterned to have the same pattern, shape, and size as the lower pattern of the three-dimensional structure 130. The alignment tolerance between the films affects the yield as the resolution increases. Therefore, self-aligning the auxiliary electrode 120 that serves as a reflective film and the three-dimensional structure 130 that plays an optically important role is also effective in improving the performance of the organic light-emitting display device.

[0028] The position of the corner end of the auxiliary electrode 120 can protrude within 2 μm from the corner end of the bottom surface of the three-dimensional structure 130 or can be recessed within 2 μm. This can be realized by a method of etching (dry or wet or a combination of both methods) in the manufacturing process of patterning the auxiliary electrode, the presence or absence of an ashing process, and the like. Since the auxiliary electrode 120 is etched using the pattern of the three-dimensional structure 130, the distance from the corner end of the three-dimensional structure 130 to the corner end of the auxiliary electrode 120 may be formed to protrude or recess at the same distance along the entire circumference of the corner, but it is not limited thereto.

[0029] The anode electrode 141 can be made of a transparent conductive film (TCO) such as ITO or IZO that can transmit light. Since the transparent conductive film is formed by a sputtering method, it has good step coverage characteristics. Therefore, by using the sputtering method, it is possible to form a film and make an electrical connection not only on the protruding upper part of the auxiliary electrode 120 but also on the recessed lateral surface of the auxiliary electrode 120.

[0030] According to the applicant's internal technology, a Pixel Define Layer (PDL) is used after anode electrode patterning for the purpose of defining sub-pixels and adjacent sub-pixels. The PDL layer is arranged for the following purposes. That is, the PDL layer is provided for the purpose of solving the problem that the current concentrated on the step at the corner of the anode electrode 141 causes the current through the cathode electrode 143 and the organic light-emitting layer to continuously concentrate and cause a short circuit, resulting in point defects. In the manufacturing method using a Fine Metal Mask (FMM), the PDL layer is provided for purposes such as the mechanical protection of sub-pixels and the insertion of a structure for preventing leakage current between sub-pixels. In an embodiment, the thickness of the transparent conductive film can be formed to be within 50 nm. In an embodiment, the anode electrode 141 can be in a structure without a step fundamentally by making it in side contact with the auxiliary electrode 120. When adding the anode separation structure 180 described in the second embodiment (Figs. 8 and 9) later, the problems of point defects due to short circuits between the anode and the cathode and the leakage current between sub-pixels can be solved without configuring the PDL layer.

[0031] The organic light-emitting element 140 is formed by depositing the organic light-emitting layer 142 and the cathode electrode 143 on the anode electrode 141. The organic light-emitting layer 142 can include a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and the like. In this case, when a voltage is applied to the anode electrode 141 and the cathode electrode 143, holes and electrons can move to the light-emitting layer through the hole transport layer and the electron transport layer respectively, and combine with each other in the light-emitting layer to emit light.

[0032] The organic light-emitting layer 142 can include, but is not limited to, a white light-emitting layer that emits white light. The organic light-emitting layer 142 may have two or more stacks formed in a tandem structure. Each stack can include a hole transport layer, at least one light-emitting layer, an electron transport layer, and the like. Also, a charge generation layer may be formed between the stacks. The charge generation layer can include an n-type charge generation layer (nCGL), a p-type charge generation layer (pCGL), etc. between the lower stack (the first stack) and the upper stack (the second stack). The charge generation layer is defined as a pair of an n-type charge generation layer (nCGL) and a p-type charge generation layer (pCGL). The n-type charge generation layer (nCGL) may be formed adjacent to the lower stack, and the p-type charge generation layer (pCGL) may be formed adjacent to the upper stack. The n-type charge generation layer injects electrons into the lower stack, and the p-type charge generation layer injects holes into the upper stack. The n-type charge generation layer can be composed of an organic layer doped with an alkali metal such as Li, Yb, Na, K, Cs, etc., or an alkaline earth metal such as Mg, Sr, Ba, Ra, etc. The p-type charge generation layer may be formed by doping a dopant into a hole transport layer. For example, in the case of a tandem structure composed of three stacks, the first organic light-emitting layer, the first charge generation layer, the second organic light-emitting layer, the second charge generation layer, and the third organic light-emitting layer may be arranged in this order on the anode electrode 141.

[0033] The cathode electrode 143 is disposed on the organic light-emitting layer 142. The cathode electrode 143 may be a common layer formed commonly on each subpixel. The cathode electrode 143 can have a transparent conductive film made of a transparent conductive material (TCO), a semi-transparent conductive film made of a semi-transparent conductive material, or a double structure combining these. Examples of the transparent conductive material (TCO) include ITO, IZO, etc. For example, the cathode electrode 143 is formed to a thickness of 20 nm or less using a semi-transparent conductive material made of magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag).

[0034] Alternatively, differently, by forming a reflective substance such as Al, an Al alloy, etc. as the cathode electrode 143 with a thickness of 80 nm or more, it can be used in a bottom emission mode. In this case, the auxiliary electrode 120 may be composed of a single layer of a transparent conductive film such as ITO or IZO.

[0035] A sealing layer 150 is disposed on the organic light-emitting element 140. The sealing layer 150 can serve to prevent moisture or oxygen from penetrating into the organic light-emitting layer 142. For this purpose, the sealing layer 150 can include at least one inorganic film and at least one organic film. For example, the sealing layer 150 can have a triple structure including a first inorganic film, a resin layer, and a second inorganic film.

[0036] At least one or more resin layers 160, 170 are formed on the sealing layer 150. As shown in FIGS. 1 and 4, the resin layer can include a first resin layer 160 made of a black resin and a second resin layer 170 made of a resin for a color filter, but is not limited thereto. Either one of the three-dimensional structure 130 and the second resin layer 170 may be a color resin, or both may be color resins. It is possible to select whether to make either the three-dimensional structure 130 or the second resin layer 170 a color resin according to the conditions of color purity, brightness, and power consumption required by the customer. The color resin can also be referred to as a resin for a color filter.

[0037] For example, the three-dimensional structure 130 and the second resin layer 170 can be used as color resins, the anode electrode 141 can be used as a transparent conductive film, and the cathode electrode 143 can be formed of an Ag:Mg alloy, but is not limited thereto.

[0038] FIG. 5 shows the light path during light emission of the organic light-emitting element in the organic light-emitting display device according to the first embodiment.

[0039] Referring to FIG. 5, the light emitted from the organic light-emitting element 140 disposed on the side surface and the upper surface of the three-dimensional structure 130 can emit light both inside and outside the three-dimensional structure 130. The light incident inside the three-dimensional structure 130 can be reflected by the auxiliary electrode 120 located below the three-dimensional structure 130 and the side surface of the three-dimensional structure 130 and emit light upward. A part of the light incident inside the three-dimensional structure 130 can travel upward through the periphery of the three-dimensional structure 130. The light emitted outside the three-dimensional structure 130 can be totally internally reflected multiple times at the interfaces such as the cathode electrode 143, the encapsulation layer 150, and the anode electrode 141 and travel upward (Pass-1 to Pass4). Thereby, the light extraction efficiency is increased and the luminance is improved.

[0040] On the other hand, the first resin layer 160 is disposed as a color resin on the side surface of the three-dimensional structure 130 or between sub-pixels. In such a case, by absorbing the light that has traveled on the side surface of the three-dimensional structure 130, that is, the side light (Pass-5), the light leakage between sub-pixels can be well prevented and the color purity can be improved. However, the first resin layer 160 may absorb the side light (Pass-5) and reduce the light extraction efficiency.

[0041] It is a flowchart for explaining the manufacturing method of the organic light-emitting display device according to the first embodiment of FIG. 6. FIGS. 7a to 7n are cross-sectional views showing the manufacturing method of the organic light-emitting display device according to the first embodiment.

[0042] The manufacturing method of the organic light-emitting display device according to the first embodiment will be described in detail with reference to FIGS. 1, 4, 6, and 7a to 7n.

[0043] [S601 in FIG. 6] As shown in FIG. 7a, a driving circuit 101 including a transistor and a capacitor is formed on the substrate 100. Transistors and the like are formed on the substrate 100. That is, on the glass substrate, a transistor made of a silicon-based semiconductor material or an oxide-based semiconductor material is formed.

[0044] [S602 in FIG. 6] As shown in FIG. 7b, after the protective layer 110 is formed, the through hole 114 is patterned. The protective layer 110 can be made of an inorganic film, such as a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer film thereof. Further, the protective layer 110 can include a polymer resin layer.

[0045] As shown in FIG. 7n, when the polymer resin layer is constituted by the first protective film, the first protective film is patterned to form the first through hole. After an inorganic film is formed on the first protective film, a second through hole having a width larger than the width of the first through hole is formed. By repeatedly performing such a process, the through hole 114 having the reflective three-dimensional structure 115 is formed. The auxiliary electrode 120 is formed on the reflective three-dimensional structure 115. The reflective three-dimensional structure 115 of the through hole 114 can improve the reflection performance of the second metal film (122 in FIG. 9) of the auxiliary electrode 120 and contribute to the improvement of the light extraction efficiency.

[0046] Therefore, the auxiliary electrode 120 is connected to the drain electrode of the transistor of the driving circuit 101 through the through hole 114 having the reflective three-dimensional structure 115 of the protective layer 110.

[0047] [S603 in FIG. 6]

[0048] As shown in FIG. 7c, the auxiliary electrode 120 including the first metal film, the second metal film, and the third metal film is formed by using a sputtering method. The auxiliary electrode 120 is connected to the drain electrode of the transistor of the driving circuit 101 through the through hole 114 formed in the protective layer 110.

[0049] [S604 in FIG. 6] As shown in FIG. 7d, a three-dimensional structure 130 is formed on the auxiliary electrode 120. When the three-dimensional structure 130 is an acrylic or polyimide resin, it may be patterned at once. When the three-dimensional structure 130 is a color resin of red, green, or blue, it may be patterned separately for each sub-pixel in three times. When the three-dimensional structure 130 is an inorganic material, it may be patterned using a photolithography process and a dry etching process.

[0050] [S605 in FIG. 6] As shown in FIG. 7e, the auxiliary electrode 120 is patterned using the three-dimensional structure 130 as a mask. Depending on the type and structure of the auxiliary electrode 120 and / or the design value of the anode isolation structure 180, wet etching or dry etching or a mixture of the two can be used for patterning the auxiliary electrode 120. An ashing process may be added for patterning the auxiliary electrode 120.

[0051] [S606 in FIG. 6] As shown in FIG. 7f, an anode isolation structure 180 is formed. The anode isolation structure 180 can be defined as a structure configured to be electrically separated between the anode electrodes 141 of adjacent sub-pixels.

[0052] On the other hand, below the three-dimensional structure 130 and the auxiliary electrode 120 patterned in self-alignment, a part of the film included in the protective layer 110 is patterned self-alignedly again with respect to the auxiliary electrode 120. In a subsequent anode electrode film formation process, which is the next step, the film may be configured to be segmented without being laterally connected self-alignedly, and such a structure can also be defined as the anode isolation structure 180. The anode isolation structure 180 will be described in detail later in the second embodiment (FIGS. 8 and 9).

[0053] [S607 in FIG. 6] As shown in FIG. 7g, after the anode electrode 141 is formed and patterned on the three-dimensional structure 130 and the anode separation structure 180. The anode electrode 141 is formed with a thickness of within 50 nm using a transparent conductive material (TCO) such as ITO or IZO that can transmit light by a sputtering method, and the anode electrode 141 is formed.

[0054] A photoresist pattern is formed on the anode electrode 141. The photoresist pattern covers the three-dimensional structure 130 and the anode separation structure 180 in order to remove the anode electrode located between the sub-pixels. After the uncovered anode electrode 141 is removed in a wet etching process to form the anode electrode 141, the photoresist pattern is removed.

[0055] [S608 in FIG. 6] As shown in FIG. 7h, an organic light-emitting layer 142 is formed on the anode electrode 141. The organic light-emitting layer 142 can include a white light-emitting layer that emits white light. When the organic light-emitting layer 142 is a white light-emitting layer, it may be formed in a tandem structure of two stacks or more.

[0056] A charge generation layer is formed between the organic light-emitting stacks. The organic light-emitting display device may be provided with at least two or more organic light-emitting stacks. As shown in FIG. 9, a charge generation layer 142b is disposed between the first organic light-emitting stack 142a and the second organic light-emitting stack 142c. The charge generation layer 142b can include an n-type charge generation layer and a p-type charge generation layer.

[0057] Since the organic light-emitting layer 142 is formed by an evaporation deposition method, its step coverage characteristics are not good. Therefore, the organic light-emitting layer 142 may penetrate into the inner wall of the undercut structure 181 of the anode separation structure 180 illustrated in FIG. 9. However, according to the embodiment, the first organic light-emitting stack 142a and the first charge generation layer 142b are both formed to have disconnection portions at the entrance of the undercut structure 181. That is, each of the first organic light-emitting stack 142a and the first charge generation layer 142b is disconnected (or separated) at the entrance of the undercut structure 181. Therefore, not only is the anode electrode 141 separated by the undercut structure 181, but also the first charge generation layer 142b, which is a low-resistance material of the organic light-emitting layer 142, is disconnected, thereby minimizing the influence on adjacent sub-pixels due to leakage current through the organic light-emitting layer 142.

[0058] A method for forming the first organic light-emitting stack 142a and the first charge generation layer 142b to both have disconnection portions in S608 will be specifically described later with reference to the cross-sectional view of the anode separation structure 180 in FIG. 9.

[0059] [S809 in FIG. 6] As shown in FIG. 7i, a cathode electrode 143 is formed on the organic light-emitting layer 142. When the cathode electrode 143 is made of ITO, IZO, etc., the cathode electrode 143 can be formed by a sputtering method. When the cathode electrode 143 is made of magnesium (Mg), silver (Ag), etc., the cathode electrode 143 can be deposited by a vacuum evaporation method. Since the same voltage must be applied as a common electrode to the entire plurality of pixels for the cathode electrode 143, the cathode electrodes 143 of all the pixels are electrically connected. Therefore, it is very important to prevent the anode separation structure 180 from disconnecting the cathode electrode 143. That is, the sputtering method has good step coverage, but in the case of the vacuum evaporation method, the step coverage is poor. Therefore, it is necessary to optimize the setting of the evaporation angle of the evaporation source so that disconnection by the anode separation structure 180 does not occur. If the height of the undercut structure 181 is not made not to exceed a certain height, disconnection of the cathode electrode 143 cannot be prevented.

[0060] [S610 of FIG. 6] As shown in FIG. 7j, a sealing layer 150 is formed on the cathode electrode 143. The sealing layer 150 can serve to prevent oxygen or moisture from penetrating into the organic light-emitting layer 142 and the cathode electrode 143. For this purpose, the sealing layer 150 can include at least one inorganic film and at least one organic film. For example, as the inorganic film, a silicon oxide film or a silicon nitride film formed by PECVD method, or a film that can be formed by PECVD or an alumina (Al 2 O 3 ) film formed by ALD (Atomic Layer Deposition) method can be used. In the case of an organic film, an epoxy resin, an acrylic resin, etc. can be used. An inorganic film may be formed on the organic film.

[0061] As shown in FIG. 7k, a first resin layer 160 is formed on the sealing layer 150.

[0062] [S611 of FIG. 6] As shown in FIG. 7l, the sealing layer 150 is exposed and developed over the entire surface with an appropriate amount of light, and only the height of the three-dimensional structure 130 remains, and the sealing layer 150 on the organic light-emitting element 140 corresponding to the upper part of the three-dimensional structure 130 is removed. In this case, by self-aligning and patterning the first resin layer 160 with the three-dimensional structure 130, the alignment tolerance during mask use can be minimized. In the regions other than the sub-pixels, the unnecessary portions can be removed by mask exposure.

[0063] [S612 of FIG. 6] As shown in FIG. 7m, a second resin layer 170 is formed on the first resin layer 160. The second resin layer 170 is arranged to correspond to each of the sub-pixels. For example, the second resin layer 170 can include a red resin layer, a green resin layer, and a blue resin layer. The red resin layer is arranged to correspond to the red sub-pixel, the green resin layer is arranged to correspond to the green sub-pixel, and the blue resin layer is arranged to correspond to the blue sub-pixel.

[0064] The second resin layer 170 may be formed of a transparent film without using a color material. The transparent film may be, for example, an acrylic resin, an epoxy resin, a polyamide resin, a polyimide resin, or the like.

[0065] On the other hand, FIG. 12 is a cross-sectional view illustrating an organic light-emitting display device according to the third embodiment. As illustrated in FIG. 12, a transparent resin can be used as the second resin layer 170 instead of the color resin of the first embodiment (FIG. 7m). Thereby, the brightness of the screen of the organic light-emitting display device is improved. In addition to such a change in the type of material of the second resin layer 170, the performance of the organic light-emitting display device is mutually affected by combinations of the type of material of the three-dimensional structure 130 and the types and thicknesses of the materials of the anode electrode 141 and the cathode electrode 143 of the organic light-emitting element 140.

[0066] Therefore, a comprehensive approach is required to maximize the light extraction efficiency and improve various image qualities. FIG. 11 illustrates examples of various combinations by such an approach. The third to eighth embodiments illustrated in FIG. 11 will be described in detail later.

[0067] As described above, the method for manufacturing an organic light-emitting display device according to the first embodiment includes forming a protective layer 110 on a substrate 100 including a driving circuit 101 and patterning through-holes (S601 and S602), forming an auxiliary electrode 120 (S603), applying red, green, and blue three-dimensional structures 130 and then patterning them (S604), patterning the auxiliary electrode 120 using the pattern of the three-dimensional structure 130 (S605), forming an anode electrode 141 and then patterning it (S607), depositing an organic light-emitting layer 142 and depositing a cathode electrode 143 to complete an organic light-emitting element 140 (S608 and S609), forming a sealing layer 150 (S610), applying a first resin layer 160 and then patterning it (S611), and patterning and forming a second resin layer 170 (S612).

[0068] A step of forming an anode separation structure 180 (S606) can be added in the step of patterning the auxiliary electrode 120 (S605).

[0069] FIG. 8 is a flowchart for explaining a method for manufacturing an organic light-emitting display device having an anode separation structure 180 according to the second embodiment. Descriptions of the same process steps as in FIG. 6 in FIG. 8 are omitted. FIG. 9 is a cross-sectional view showing an example of the anode separation structure according to the second embodiment. FIG. 9 is a drawing showing an enlarged view of the anode separation structure 180 in FIG. 7m. FIGS. 10a to 10g are cross-sectional views showing a method for manufacturing an organic light-emitting display device having an anode separation structure according to the second embodiment.

[0070] The anode separation structure 180 of the second embodiment can have a structure in which the anode electrode 141 is separated and the low-resistance layer of the organic light-emitting layer 142 is also interrupted. The low-resistance layer, which is the core affecting the leakage current between sub-pixels, may be a first organic light-emitting stack 142a and a first charge generation layer 142b including a hole injection layer (p-Doped HTL) formed in direct contact on the anode electrode.

[0071] A method for manufacturing the anode separation structure 180 will be described with reference to FIGS. 8, 9, 10a to 10j. The protective layer 110 can include a first protective film 111, a second protective film 112, a third protective film 113, and the like. For example, the first protective film 111 can include a silicon nitride film (SiNx) or the like, the second protective film 112 can include a silicon oxide film (SiOx) or the like, and the third protective film 113 can include a silicon nitride film (SiNx) or the like. Also, the first protective film 111, the second protective film 112, and the third protective film 113 are formed in this order on the driving circuit 101.

[0072] The auxiliary electrode 120 can include a first metal film 121, a second metal film 122, a third metal film 123, and the like. For example, the first metal film 121 can be made of Ti, Mo, or the like as a metal having good electrical contact characteristics with the driving circuit and being easily dry-etched. The second metal film 122 can be made of Ag, an Ag alloy, Al, or the like as a metal having good reflection characteristics and being easily wet-etched. The third metal film 123 can be made of ITO, IZO, or the like as a conductive material that is transparent, has a low contact resistance with the anode electrode 141, and has good process reliability.

[0073] [S6061 in FIG. 8] As shown in FIG. 10a, the auxiliary electrode 120 is patterned using the three-dimensional structure 130. The third metal film 123, the second metal film 122, and the first metal film 121 are etched into various cross-sectional shapes according to the etching characteristics of the materials. FIG. 10a is an example of various cross-sectional shapes, and the embodiments are not limited thereto. As shown in FIG. 10b, a part of the three-dimensional structure 130 can be removed by ashing or dry etching, and a part of the auxiliary electrode 120 that was recessed below the three-dimensional structure 130 can be exposed. Thereby, an electrical contact region for connecting the anode electrode (141 in FIG. 10e) to the auxiliary electrode 120 in the next step is secured.

[0074] [S6062 in FIG. 8] When the dry etching is continuously performed to etch the protective layer 110, it is patterned as shown in FIG. 10c. At this time, the first protective film 111 must remain while the dry etching is performed on the third protective film 113 and the second protective film 112. For example, in the case of a triple structure of a silicon nitride film and a silicon oxide film, the ratio of silicon to nitrogen, the ratio of silicon to oxygen, the density of the film, etc. are well set from the film formation stage, and in the dry etching stage, the type and composition ratio of the dry etching gas, etc. must be well set for each dry stage. For this purpose, the third protective film 113 can be formed of a silicon nitride film, and the second protective film 112 can be made of a silicon oxide film. Further, the first protective film 111 can be made of a resin film. As the resin film, for example, an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin can be used. Therefore, the protective layer 110 may be composed of a triple structure, or may be composed of more films.

[0075] As another example, the third protective film 113 may be omitted and the structure may be a double structure of the second protective film 112 and the first protective film 111. For example, the first protective film 111 can be formed of a resin film, and the second protective film 112 can be made of an inorganic film such as a silicon nitride film or a silicon oxide film. At this time, by using a resin film and an inorganic film having a large etching selectivity ratio, an undercut structure 181 can be easily formed. A cross-sectional view of the result for this structure is shown in FIG. 9. Referring to FIG. 9, the etching surfaces of the second metal film 122 and the third metal film 123 of the auxiliary electrode 120 can be located on the same vertical line at a level of approximately several 100 nm. The anode electrode 141 is connected to the upper surface of the protruding portion of the first metal film 121 protruding within 2 μm of the auxiliary electrode 120 and the etching surfaces of the second metal film 122 and the third metal film 123, respectively.

[0076] [S6063 of FIG. 8] As shown in FIG. 10d, an undercut structure 181 is formed by applying an etching method in which the etching selectivity of the second protective film 112 with respect to the first protective film 111 is high, and etching the first protective film 111 and the second protective film 112. In such a case, it is patterned into a cross-sectional structure as shown in FIG. 10d. For example, the first inorganic film which is the first protective film 111 and the third inorganic film which is the third protective film 113 may be formed of a silicon nitride film, and the second inorganic film which is the second protective film 112 may be made of a silicon oxide film. In such a case, a selective ratio can be ensured with an HF-based etching solution. Or, when the first protective film 111 uses a resin film, the etching selectivity can be increased by taking advantage of the fact that the resin film is not easily etched by a wet etching solution, and the formation of a cross-sectional structure as shown in FIG. 10d can be facilitated.

[0077] [S807 of FIG. 8] As shown in FIG. 10e, an anode electrode 141 is formed on the three-dimensional structure 130 and the anode separation structure 180. The anode electrode 141 can be made of a transparent conductive material such as ITO or IZO that can transmit light. The thickness H1 of the anode electrode 141 may be 50 nm or less. Thereby, the height H of the undercut structure 181 is reduced by the anode electrode 141, and the anode electrode 141 is prevented from being separated and is connected.

[0078] Thereby, the anode electrode 141 is formed while surrounding the surface of the three-dimensional structure 130 constituting the sub-pixel, that is, the side surface and the upper surface. The anode electrode 141 is connected to the auxiliary electrode 120 protruding from the side surface of the three-dimensional structure 130, and is connected to the driving circuit 101 via the auxiliary electrode 120. At this time, the anode electrode 141 is insulated from the adjacent sub-pixels by the undercut structure 181.

[0079] The anode electrodes formed on each sub-pixel are insulated from the adjacent sub-pixels, from each other, and from the anode electrodes formed in regions other than the pixels including a plurality of sub-pixels. At this time, the anode electrodes formed between adjacent sub-pixels and in regions other than the pixels including a plurality of sub-pixels can be left as they are. In contrast, after forming a pattern by photolithography, the anode electrodes that do not need to be covered by the photoresist pattern can be removed by wet etching. After the anode electrode 141 is formed, the photoresist pattern is removed.

[0080] [S808 of FIG. 8] As shown in FIG. 10f, an organic light-emitting layer 142 is formed on the anode electrode 141. The organic light-emitting layer 142 can include a white light-emitting layer that emits white light. When the organic light-emitting layer 142 is a white light-emitting layer, it may be formed in a tandem structure of two or more stacks. A charge generation layer is formed between the stacks. The charge generation layer 142b can include an n-type charge generation layer and a p-type charge generation layer.

[0081] The anode separation structure may be a structure in which the anode electrode 141 as well as both the first organic light-emitting stack 142a and the first charge generation layer 142b are insulated, and the cathode electrode 143 is connected laterally. The core idea of the anode separation structure is a structure that separates the anode electrode 141 and the organic light-emitting layer 142 at the same position.

[0082] Since the organic light-emitting layer 142 is formed by evaporation deposition, its step coverage characteristics are poor, and the organic light-emitting layer 142 may penetrate into the inner wall of the undercut structure 181 shown in FIG. 9. However, according to the embodiment, the first organic light-emitting stack 142a and the first charge generation layer 142b are both formed to have a disconnection portion at the entrance of the undercut structure 181. That is, each of the first organic light-emitting stack 142a and the first charge generation layer 142b is disconnected at the entrance of the undercut structure 181. Therefore, not only is the anode electrode 141 separated by the undercut structure 181, but also the first charge generation layer 142b, which is a low-resistance material of the organic light-emitting layer 142, is disconnected, thereby minimizing the influence on adjacent sub-pixels due to leakage current through the organic light-emitting layer 142.

[0083] As shown in FIG. 10g, a cathode electrode 143 is formed on the organic light-emitting layer 142.

[0084] On the other hand, as shown in FIGS. 10f and 10g, the height H of the undercut structure 181 may be greater than at least the sum of the thickness H1 of the anode electrode 141, the thickness H2 of the first organic light-emitting stack, and the thickness H3 of the first charge generation layer. Also, since the cathode electrode 143 must be electrically connected to each sub-pixel, the height H of the undercut structure 181 may be smaller than the sum of the total thickness H4 of the organic light-emitting layer 142 and the thickness H1 of the anode electrode 141. Therefore, in order for the anode electrode 141 not to be connected to the first organic light-emitting stack 142a and the first charge generation layer 142b and for the cathode electrode 143 to be connected to the second organic light-emitting stack 142c or the like, the following Equation 1 can be satisfied. The depth D of the undercut structure 181 may be more than 1 times the height H of the undercut structure 181 in consideration of process deviations. Thereby, each of the first organic light-emitting stack 142a and the first charge generation layer 142b is disconnected by the anode separation structure, and process deviations are also considered. This can be formulated by Equation 1.

[0085] [Equation 1] H1 + H2 + H3 < H < H1 + H4

[0086] For example, in a two-stack structure,

[0087] - Thickness H1 of the anode electrode 141: 50 nm

[0088] - Thickness H2 of the first organic light-emitting stack: 150 nm

[0089] - Thickness H3 of the first charge generation layer 142b: 20 nm

[0090] - Total thickness H4 of the organic light-emitting layer 142: 450 nm

[0091] When applied, the height H of the undercut structure 181 can have 220 nm to 500 nm, and the depth D of the undercut structure 181 may be greater than 220 nm to 500 nm.

[0092] In a three-stack structure, "H2 + H3" in the above formula 1 may be the thickness including all of the first organic light-emitting stack, the second organic light-emitting stack, the first charge generation layer, and the second charge generation layer. Further, the thicknesses of the structures of the plurality of stacks can be defined based on the thickness H4 of the organic light-emitting element 140 disposed on the side surface of the three-dimensional structure 130. This is because the thicknesses of the organic light-emitting elements 140 disposed on the upper part and the side surface of the three-dimensional structure 130 are different, and the position of the anode separation structure 180 is in contact with the side surface of the three-dimensional structure 130, so it is reasonable to use the organic light-emitting element 140 disposed on the side surface of the three-dimensional structure 130 as a reference.

[0093] FIG. 11 is a table explaining the materials and material characteristics of the components constituting each of the first to eighth embodiments.

[0094] The third to eighth embodiments illustrated in FIG. 11 are embodiments in which some of the components of the first embodiment are replaced or newly added. In addition to this, more embodiments are possible with more combinations.

[0095] On the one hand, FIG. 12 is a cross-sectional view illustrating an organic light-emitting display device according to the third embodiment. FIG. 13 is a cross-sectional view illustrating an organic light-emitting display device according to the fourth embodiment. FIG. 14 is a cross-sectional view illustrating an organic light-emitting display device according to the fifth embodiment. FIG. 16 is a flowchart for explaining a method of manufacturing an organic light-emitting display device according to the third to fifth embodiments.

[0096] For example, unlike the first embodiment in which the second resin layer 170 is formed of a color resin, as shown in FIGS. 12 and 16, the second resin layer 170 can be made of a transparent resin. As a result, the number of steps of the color filter is reduced, the material cost and the investment cost are reduced, and the luminance is improved.

[0097] For example, as shown in FIGS. 13 and 16, the three-dimensional structure 130 can be made of a transparent inorganic film such as a silicon oxide film or a silicon nitride film, a transparent polyimide-based resin, or an acrylic-based resin. The organic light-emitting element 140 is disposed on the surface of the three-dimensional structure 130, that is, on the side surface and the upper surface. A sealing layer 150 is disposed on the organic light-emitting element 140, and a first resin layer 160 formed of a resin for a color filter is formed on the sealing layer 150. The second resin layer 170 made of a black resin is disposed between sub-pixels to prevent light leakage.

[0098] For example, as shown in FIGS. 14 and 16 (S1610), the light guide layer 190 is formed on the front surface of a reflective metal such as aluminum (Al), silver (Ag), or an Ag alloy. After filling the valley region remaining after patterning of the first resin layer 160 between sub-pixels with the second resin layer 170 made of a black resin, the light guide layer 190 in the region without the second resin layer 170 is removed. In the case of the fifth embodiment, the light emitted from the organic light-emitting element 140 is not absorbed by the second resin layer 170 but is reflected and guided upward and emitted, thereby improving the light extraction efficiency.

[0099] FIG. 15 shows the light path when the organic light-emitting element emits light in the organic light-emitting display device according to the fifth embodiment. In the light guide layer 190, the light emitted from the side surface of the three-dimensional structure 130 is totally reflected and guided upward.

[0100] On the one hand, FIG. 17 is a cross-sectional view illustrating an organic light-emitting display device according to the sixth embodiment. FIG. 18 is a cross-sectional view illustrating an organic light-emitting display device according to the seventh embodiment. FIG. 19 is a cross-sectional view illustrating an organic light-emitting display device according to the eighth embodiment.

[0101] As shown in FIG. 17, the light guide layer 190 is disposed on the side surface of the three-dimensional structure 130. A sealing layer 150 is disposed between the organic light-emitting element 140 and the light guide layer 190. A common point among the sixth to eighth embodiments is that the anode electrode 141 can be made of a reflective metal. The light emitted from the organic light-emitting element 140 is emitted only in the outward direction of the three-dimensional structure 130. In particular, in the sixth embodiment (FIG. 17), the three-dimensional structure 130 does not need to be formed of a color resin or a transparent resin, but can be made of a resin that is easy to process. As a common feature of the sixth to eighth embodiments, the auxiliary electrode 120 may be formed in a reflective film structure. The three-dimensional structure 130 can be made of a black resin on the auxiliary electrode 120. The anode electrode 141 is formed on the surface of the three-dimensional structure 130. The anode electrode 141 can have a double structure composed of a second layer having a transparent conductive film such as ITO or IZO on a first layer containing aluminum (Al), silver (Ag), an Ag alloy, or the like. An organic light-emitting element 140 composed of two or more stacked light-emitting layers is disposed on the anode electrode 141, and the cathode electrode 143 included in the organic light-emitting element 140 can be made of a transparent conductive film such as ITO or IZO.

[0102] In the subsequent processes and structures, the structures and processes of the first resin layer 160, the light guide layer 190, and the second resin layer 170 in the sixth embodiment are the same as those described in the fifth embodiment.

[0103] As shown in FIGS. 18 and 19, in the seventh and eighth embodiments, the anode electrode 141 formed on the upper surface of the three-dimensional structure 130 is removed. That is, the anode electrode 141 is formed on the side surface of the three-dimensional structure 130. This is because it is difficult to simultaneously control the thickness of the upper surface and the side surface of the three-dimensional structure 130 in the vapor deposition process of the organic material, and the higher the resolution, the more effectively the light emitted from the side surface of the three-dimensional structure 130 is utilized, which is effective for increasing the light extraction efficiency.

[0104] FIG. 20 shows the light path when the organic light-emitting element emits light in the organic light-emitting display device according to the seventh embodiment.

[0105] As shown in FIG. 20, the anode electrode 141 on the upper surface of the three-dimensional structure 130 is removed, and light can be emitted only from the organic light-emitting layer 142 in contact with the anode electrode 141 on the side surface of the three-dimensional structure 130. The light emitted from the organic light-emitting layer 142 on the side surface of the three-dimensional structure 130 is guided upward in the direction of the three-dimensional structure 130 while being multiply reflected at the interfaces between the light guide layer 190, the cathode electrode 143, the anode electrode 141, and the sealing layer 150.

[0106] On the other hand, a first resin layer 160 formed of a black resin is disposed between sub-pixels, that is, between the light guide layers 190 of each sub-pixel located between the three-dimensional structures 130. Also, the three-dimensional structure 130 can also be made of a black resin. Thereby, the light emitted from the organic light-emitting element 140 is guided vertically upward while being multiply reflected between the anode electrode 141 and the light guide layer. Thereby, the light extraction efficiency is improved and the luminance is increased.

[0107] In the case of this structure, in order to guide light only in the upward direction, the auxiliary electrode 120 is formed in the reflection process. As shown by the optical path (Pass-2) in FIG. 20, the auxiliary electrode 120 guides the light traveling downward in the upward direction. Also, when the auxiliary electrode 120 is formed of a reflective metal, the contrast ratio characteristics are degraded by the light incident from the outside, so it is necessary to add a polarizing plate. However, according to the embodiment, since the three-dimensional structure 130 is formed of a black resin, there is no need to add a polarizing plate. In particular, in the seventh and eighth embodiments, except for the region where light is emitted, it is formed of a black resin, and the light is emitted only from the cross section having the thickness of the organic light emitting element 140, so it is possible to realize display characteristics with a contrast ratio characteristic close to infinity without adding a polarizing plate.

[0108] FIG. 21 is a flowchart for explaining a method of manufacturing an organic light emitting display device according to the sixth to eighth embodiments. In FIG. 21, descriptions of the same process steps as in FIG. 6 are omitted.

[0109] Descriptions will be made only for the additional processes not present in the first to fifth embodiments, and for the omitted descriptions, reference can be made to the first to fifth embodiments.

[0110] Referring to S607 in FIG. 21, in the case of the seventh and eighth embodiments, when patterning the reflective anode electrode 141, the anode electrode 141 on the upper surface of the additional three-dimensional structure 130 is selectively removed. The anode electrode 141 in the seventh and eighth embodiments can be made of Ag or an Ag alloy having a reflective function. The anode electrode 141 may be configured in a double structure with a transparent conductive film such as ITO or IZO on the Al reflective film. The anode electrode 141 may be configured in a triple structure with a transparent conductive film added to the lower part of the reflective film of this double structure layer. After a photosensitive resin is applied on the anode electrode 141, it is exposed and developed with an appropriate amount of light over the entire surface, and the photosensitive resin on the upper part of the three-dimensional structure 130 is removed, leaving only the height of the three-dimensional structure 130. In this case, since the three-dimensional structure 130 and the photosensitive resin are self-aligned and patterned, the alignment tolerance during mask use is minimized. In subsequent steps, the anode electrode 141 disposed on the upper surface of the three-dimensional structure 130 where the photosensitive resin is not applied is removed using an etching process. Regions other than the sub-pixels are removed by mask exposure.

[0111] In S2110 of FIG. 21, in the case of the seventh and eighth embodiments, in order to cause total reflection to occur at the interface between the light guide layer 190 and the sealing layer 150 at the incident angle of as many regions as possible, the light guide layer 190 may be formed of a material having a refractive index at least 0.2 smaller than that of the sealing layer 150 of the sealing layer 150 in contact with the light guide layer 190. In order to ensure that light incident without total reflection occurring at the interface between the light guide layer 190 and the sealing layer 150 is reflected again, the light guide layer 190 may be formed in a double structure with a metal film having good reflectivity added thereto. The light guide layer on the upper surface of the three-dimensional structure 130 can be removed in S2110.

[0112] The above-described embodiments are examples, and free modifications are possible within the scope included in the spirit of the present invention. Therefore, the embodiments include modifications within the scope of the appended claims and equivalents thereof.

Industrial Applicability

[0113] The embodiments can be adopted in the display field for displaying videos and information. The embodiments can be adopted in the display field for displaying videos and information by using organic light-emitting elements.

[0114] For example, the embodiments can be adopted in an HMD type display. Further, the embodiments can be adopted in TVs, signage, mobile terminals such as mobile phones and smart phones, computer displays such as notebook computers and desktops, automotive HUD (head-Up Display), display backlight units, XR (Extend Reality) displays such as AR, VR, MR (mixed Reality), light source sources, etc.

Claims

1. A substrate including a plurality of pixels, each of the plurality of pixels including a plurality of sub-pixels, an auxiliary electrode for each of the plurality of sub-pixels, a three-dimensional structure on the auxiliary electrode, an organic light-emitting element surrounding the three-dimensional structure, a sealing layer surrounding the organic light-emitting element, and a resin layer on the sealing layer, wherein the organic light-emitting element includes an anode electrode surrounding the upper surface and side surface of the three-dimensional structure and connected to the auxiliary electrode through the side surface of the three-dimensional structure, an organic light-emitting layer on the anode electrode, and a cathode electrode on the organic light-emitting layer. An organic light-emitting display device.

2. The auxiliary electrode has a triple structure including a first metal film, a second metal film, and a third metal film, a triple structure including the first metal film, the third metal film, and the second metal film, a double structure including the second metal film and the third metal film, or a single structure including one of the first metal film, the second metal film, and the third metal film. The organic light-emitting display device according to Claim 1.

3. The three-dimensional structure is composed of a polymer material or a transparent inorganic film, and when the three-dimensional structure is a polymer material, the three-dimensional structure includes a polymer material in which red, green, and blue pigments are dispersed for each of the sub-pixels or a transparent polymer material. The organic light-emitting display device according to Claim 1.

4. The distance from the corner end of the lower surface of the three-dimensional structure to the corner end of the auxiliary electrode is the same along the periphery of the three-dimensional structure. The organic light-emitting display device according to Claim 2 or 3.

5. The distance from the corner end of the lower surface of the three-dimensional structure to the corner end of the auxiliary electrode is within 2 μm, and the corner end of the lower surface of the three-dimensional structure protrudes or is recessed. The organic light-emitting display device according to Claim 4.

6. The three-dimensional structure has a tetrahedral form, a hexahedral form, an octahedral form, a cylindrical form, a hemispherical or semi-elliptical spherical form, a form in which the inner diameter decreases towards the upper part, or a combination form thereof, the lower surface of the three-dimensional structure is in contact with the auxiliary electrode, the inclination of the side surface with respect to the lower surface of the three-dimensional structure is 60 degrees to 90 degrees, and the inclination is maintained up to the upper surface of the three-dimensional structure or continues up to the upper surface of the three-dimensional structure while increasing or decreasing within the inclination. The organic light-emitting display device according to Claim 1.

7. The organic light-emitting display device according to claim 6, wherein the three-dimensional structure has the same form for sub-pixels having the same color and different forms for sub-pixels having different colors.

8. The pixel includes a first sub-pixel, a second sub-pixel, and a third sub-pixel, wherein the first sub-pixel and the second sub-pixel include an octahedral three-dimensional structure, The organic light-emitting display device according to claim 7, wherein the third sub-pixel includes a tetrahedral three-dimensional structure.

9. a driving circuit under the auxiliary electrode; and a protective layer including two or more protective films between the auxiliary electrode and the driving circuit, wherein the driving circuit formed by the two or more protective films in the protective layer includes a through-hole having a reflective three-dimensional structure formed in the protective layer, The organic light-emitting display device according to claim 1, wherein the driving circuit is connected to the auxiliary electrode through the through-hole.

10. The organic light-emitting layer includes a plurality of organic light-emitting stacks, the organic light-emitting stack includes a charge generation layer, the anode electrode has a transparent conductive film such as ITO or IZO, The organic light-emitting display device according to claim 1, wherein the cathode electrode has a transparent conductive film such as ITO or IZO, a semi-transparent conductive film such as an Mg:Ag alloy, or a double structure combining these.

11. The encapsulation layer has a triple structure or a single structure, the triple structure includes: a first encapsulation film which is an inorganic film such as alumina, silicon nitride film, silicon oxide film, etc. or an inorganic film double structure combining the inorganic films; a second encapsulation film formed of an organic film on the first encapsulation film; and a third encapsulation film having the same structure as the first encapsulation film on the second encapsulation film, The organic light-emitting display device according to claim 1, wherein the single structure is composed of the first encapsulation film.

12. The organic light-emitting display device according to claim 1, wherein the resin layer includes a resin for color filter, a black resin, or a transparent resin.

13. The resin layer includes a first resin layer and a second resin layer on top of the first resin layer, the first resin layer includes the black resin, The organic light-emitting display device according to claim 12, wherein the second resin layer includes the resin for color filter or the transparent resin.

14. a substrate including a plurality of pixels, each of the plurality of pixels including a plurality of sub-pixels; a driving circuit for each of the plurality of sub-pixels; a protective layer disposed on the driving circuit and including two or more protective films; An auxiliary electrode disposed on the protective layer and connected to the drive circuit through a through hole of the protective layer; An anode isolation structure provided along the periphery of the auxiliary electrode; A three-dimensional structure on the auxiliary electrode; An organic light-emitting element surrounding the three-dimensional structure; A sealing layer surrounding the organic light-emitting element; A resin layer on the sealing layer, and includes: The organic light-emitting element includes: An anode electrode surrounding the upper surface and the side surface of the three-dimensional structure and connected to the auxiliary electrode through the side surface of the three-dimensional structure; An organic light-emitting layer on the anode electrode; A cathode electrode on the organic light-emitting layer, and includes: The anode isolation structure has an undercut structure formed by positioning the respective ends of the two or more protective films differently along the periphery of the corner of the auxiliary electrode to isolate the anode electrode. An organic light-emitting display device.

15. The auxiliary electrode has the same shape as the lower surface of the three-dimensional structure; The distance from the end of the corner of the auxiliary electrode to the end of the corner of the lower surface of the three-dimensional structure is 2 μm or less; The organic light-emitting display device according to claim 14, wherein the distance is the same along the periphery of the three-dimensional structure.

16. The protective layer has a triple structure including a first protective film, a second protective film, and a third protective film; The first protective film includes a silicon nitride film (SiNx) or a polymer resin layer; The second protective film includes a silicon oxide film (SiO x); The organic light-emitting display device according to claim 14, wherein the third protective film includes a silicon nitride film (SiNx).

17. The protective layer has a triple structure including a first protective film, a second protective film, and a third protective film; The first protective film includes a silicon oxide film (SiO x) or a polymer resin layer; The second protective film includes a silicon nitride film (SiNx); The organic light-emitting display device according to claim 14, wherein the third protective film includes a silicon oxide film (SiO x).

18. The protective layer has a double structure composed of a first protective film and a second protective film; The first protective film includes a polymer resin; The organic light-emitting display device according to claim 14, wherein the second protective film includes a silicon nitride film (SiNx) or a silicon oxide film (SiO x).

19. The organic light-emitting layer includes a plurality of organic light-emitting stacks; The organic light-emitting stack includes a charge generation layer; The height of the undercut structure is Greater than the sum of the thickness of the anode electrode, the thickness of the first organic light-emitting stack, and the thickness of the first charge generation layer of the first organic light-emitting stack, Less than the sum of the total thickness of the organic light-emitting layer and the thickness of the anode electrode, The depth of the undercut structure is 1 time or more the height of the undercut structure. The organic light-emitting display device according to any one of claims 14 to 18.

20. The anode electrode is horizontally interrupted together with the first organic light-emitting stack and the first charge generation layer at a position horizontally interrupted from the anode electrode of an adjacent sub-pixel. At the interrupted position, the cathode electrode is horizontally electrically connected to the cathode electrode of an adjacent sub-pixel. The organic light-emitting display device according to claim 19.

21. A substrate including a plurality of pixels, each of the plurality of pixels including a plurality of sub-pixels, An auxiliary electrode for each of the plurality of sub-pixels, A three-dimensional structure on the auxiliary electrode, An organic light-emitting element surrounding the three-dimensional structure, A sealing layer surrounding the organic light-emitting element, A light guide layer on the sealing layer, A resin layer on the sealing layer, and includes, The organic light-emitting element is An anode electrode surrounding a side surface of the three-dimensional structure and connected to the auxiliary electrode through the side surface of the three-dimensional structure, An organic light-emitting layer on the anode electrode, A cathode electrode on the organic light-emitting layer, and includes, The light guide layer is disposed on a side surface of the three-dimensional structure. The organic light-emitting display device.

22. The three-dimensional structure is made of an opaque polymer material having a transmittance of 10% or less, The anode electrode has a triple structure including a first transparent conductive film such as ITO or IZO, a reflective metal film such as Al, Ag, or Ag alloy on the first transparent conductive film, and a second transparent conductive film such as ITO or IZO on the reflective metal film, or has a double structure including the reflective metal film and the second transparent conductive film on the reflective metal film. The organic light-emitting display device according to claim 21.

23. The sealing layer is A first sealing film having a double structure of an inorganic film which is a single film of alumina, silicon nitride film, silicon oxide film or a combination of the single films, a second sealing film made of an organic film on the first sealing film, and a third sealing film made of a material adjacent to the first sealing film on the second sealing film, or has a single structure including the first sealing film. The organic light-emitting display device according to claim 21.

24. The light guide layer is The organic light-emitting display device according to claim 21, having a single structure including a reflective metal film such as Ag or Al, or having a double structure including an organic film or an inorganic film having a refractive index 0.2 or more smaller than that of the encapsulation film in contact with the light guide layer in the encapsulation film included in the encapsulation layer and the reflective metal film on the organic film or the inorganic film.

25. The organic light-emitting element emits light on the side surface of the three-dimensional structure, The emitted light is guided upward while being multiply reflected at an interface between layers or films disposed between the light guide layer and the three-dimensional structure. The organic light-emitting display device according to any one of claims 21 to 24.

26. The three-dimensional structure includes a black resin, The resin layer includes a first resin layer and a second resin layer, The first resin layer includes a black resin between the three-dimensional structures of adjacent sub-pixels, The light guide layer is disposed between the first resin layer and the encapsulation layer, The second resin layer is disposed on the encapsulation layer disposed on the upper part of the three-dimensional structure. The organic light-emitting display device according to claim 21.

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