Method and device for acquiring silicon photomultiplier data

Abstract

A system and method are provided for improving assay results obtained by a silicon photomultiplier device. The system may include an assay device that includes a silicon photomultiplier device and a computing system. The system may further include a processing component and a memory unit configured to receive input and output information of the silicon photomultiplier device and determine the temperature of the silicon photomultiplier device.

Description

Technical Field

[0001] Related Applications This application claims priority to U.S. Provisional Application No. 63 / 336,822, filed Apr. 29, 2022, entitled "METHODS AND DEVICES FOR OBTAINING SILICON PHOTOMULTIPLIER DATA", which is incorporated herein by reference.

[0002] The present disclosure relates to methods and systems using silicon photomultipliers. Specifically, the present disclosure relates to methods and systems using improved methods for addressing the effects of device temperature changes on the performance of silicon photomultipliers. The present invention also relates to assay systems and devices incorporating these improvements.

Background Art

[0003] Silicon photomultiplier (SiPM) devices are sensitive photodetectors used in a variety of applications involving low light level measurements. For example, SiPMs can be used as photodetectors in assay devices and systems, LIDAR units, 3D ranging devices, radiation detection units, PET devices, nephelometry devices, nephrometry devices, air quality analysis devices, particle analysis devices, photon correlation spectroscopy devices, Raman spectroscopy devices, and any other device that relies on accurate detection of incident light. However, SiPMs have several limitations. The output gain of SiPM devices can be affected by or dependent on their operating voltage and temperature. With respect to temperature, the gain at a fixed operating voltage can vary by 1% to 2% per degree Celsius under typical operating conditions. This can cause inaccuracies in the use of SiPMs for light detection in precision applications. Therefore, what is needed are methods and devices for addressing SiPM temperature changes and improving SiPM performance by taking them into account.

Summary of the Invention

[0004] One embodiment as disclosed herein is a method for obtaining temperature-corrected photometric data by a silicon photomultiplier device, the method comprising: operating the silicon photomultiplier device in a forward bias mode by a forward bias mode input signal; measuring a forward bias mode response signal by at least one processor; determining the temperature of the silicon photomultiplier device according to the forward bias mode input signal and the forward bias mode response signal by at least one processor; determining an operating reverse bias mode voltage by at least one processor; operating the silicon photomultiplier device in an operating reverse bias mode by the operating reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining the intensity of the light according to the output signal and the silicon photomultiplier device gain.

[0005] A further embodiment as disclosed herein is a method for obtaining temperature-corrected photometric data by a silicon photomultiplier device, the method comprising: operating the silicon photomultiplier device in a reverse bias mode by a reverse bias input signal; measuring a reverse bias mode saturation current by at least one processor; determining the temperature of the silicon photomultiplier device according to the reverse bias mode saturation current by at least one processor; determining an operating reverse bias mode voltage by at least one processor; operating the silicon photomultiplier device in an operating reverse bias mode by the operating reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining the intensity of the light according to the temperature of the silicon photomultiplier device and the silicon photomultiplier device gain.

[0006] Further embodiments disclosed herein are methods for obtaining temperature-corrected photometric data by a silicon photomultiplier device, the method comprising operating the silicon photomultiplier device in a reverse bias mode with a reverse bias input signal, exposing the silicon photomultiplier device to a predetermined light intensity, measuring a reverse bias output signal from the silicon photomultiplier device, determining the temperature of the silicon photomultiplier device according to the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity, determining an operating reverse bias mode voltage by at least one processor, operating the silicon photomultiplier device in an operating reverse bias mode with the operating reverse bias mode voltage, exposing the silicon photomultiplier device to light from a target object, measuring an output signal from the silicon photomultiplier device, and determining the intensity of the light according to the temperature of the silicon photomultiplier device and the silicon photomultiplier device gain.

[0007] Further embodiments disclosed herein are methods for determining the temperature of a silicon photomultiplier device, the method comprising operating the silicon photomultiplier device in a reverse bias mode with a reverse bias input signal, exposing the silicon photomultiplier device to a predetermined light intensity, measuring a reverse bias output signal from the silicon photomultiplier device, determining the gain of the silicon photomultiplier device when exposed to the predetermined light intensity according to the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity, and determining the temperature of the silicon photomultiplier device according to the gain.

[0008] Further embodiments disclosed herein are systems for obtaining temperature-corrected photometric data, the system comprising a silicon photomultiplier device including a plurality of photomultiplier diodes and at least one processor, the at least one processor operating the silicon photomultiplier device in a forward bias mode with a forward bias mode input signal, measuring a forward bias mode response signal by the at least one processor, determining the temperature of the silicon photomultiplier device by the at least one processor according to the forward bias mode input signal and the forward bias mode response signal, determining an operating reverse bias mode voltage by the at least one processor, operating the silicon photomultiplier device in an operating reverse bias mode with the operating reverse bias mode voltage, exposing the silicon photomultiplier device to light from a target object, measuring an output signal from the silicon photomultiplier device, and determining the intensity of the light according to the output signal and the silicon photomultiplier device gain, and being configured to have software instructions therefor, including a system.

[0009] Further embodiments disclosed herein are systems for obtaining temperature-corrected photometric data, the system comprising a silicon photomultiplier device including a plurality of photomultiplier diodes and at least one processor, the at least one processor configured to operate the silicon photomultiplier device in reverse bias mode with a reverse bias input signal, measure the reverse bias mode saturation current by the at least one processor, determine the temperature of the silicon photomultiplier device according to the reverse bias mode saturation current by the at least one processor, determine the operating reverse bias mode voltage by the at least one processor, operate the silicon photomultiplier device in operating reverse bias mode with the operating reverse bias mode voltage, expose the silicon photomultiplier device to light from a target object, measure an output signal from the silicon photomultiplier device, and determine the intensity of the light according to the temperature of the silicon photomultiplier device and the silicon photomultiplier device gain, and comprising a system configured to have software instructions for doing so.

[0010] A further embodiment disclosed herein is a system for obtaining temperature-corrected photometric data, the system comprising a silicon photomultiplier device including a plurality of avalanche diodes and at least one processor, the at least one processor configured to operate the silicon photomultiplier device in a reverse bias mode with a reverse bias input signal, expose the silicon photomultiplier device to a predetermined light intensity, measure a reverse bias output signal from the silicon photomultiplier device, determine the temperature of the silicon photomultiplier device according to the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity, determine an operating reverse bias mode voltage by the at least one processor, operate the silicon photomultiplier device in an operating reverse bias mode with the operating reverse bias mode voltage, expose the silicon photomultiplier device to light from a target object, measure an output signal from the silicon photomultiplier device, and determine the intensity of the light according to the temperature of the silicon photomultiplier device and the silicon photomultiplier device gain, the system being configured to have software instructions therefor.

[0011] A further embodiment disclosed herein is a system for obtaining temperature-corrected photometric data, the system comprising a silicon photomultiplier device including a plurality of avalanche diodes and at least one processor, the at least one processor configured to operate the silicon photomultiplier device in a reverse bias mode with a reverse bias input signal, expose the silicon photomultiplier device to a predetermined light intensity, measure a reverse bias output signal from the silicon photomultiplier device, determine the gain of the silicon photomultiplier device when exposed to the predetermined light intensity according to the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity, and determine the temperature of the silicon photomultiplier device according to the gain, the system being configured to have software instructions therefor.

[0012] A further embodiment disclosed herein is a non-transitory computer-readable medium configured to have software instructions that cause at least one processor to execute a method, the method comprising: operating a silicon photomultiplier device in a forward bias mode with a forward bias mode input signal; measuring, by at least one processor, a forward bias mode response signal; determining, by at least one processor, a temperature of the silicon photomultiplier device according to the forward bias mode input signal and the forward bias mode response signal; determining, by at least one processor, an operating reverse bias mode voltage; operating the silicon photomultiplier device in an operating reverse bias mode with the operating reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light according to the output signal and a silicon photomultiplier device gain. The non-transitory computer-readable medium is included.

[0013] A non-transitory computer-readable medium configured to have software instructions that cause a method to be executed by at least one processor, the method comprising: operating a silicon photomultiplier device in a reverse bias mode by a reverse bias input signal; measuring a reverse bias mode saturation current by at least one processor; determining a temperature of the silicon photomultiplier device according to the reverse bias mode saturation current by at least one processor; determining an operating reverse bias mode voltage by at least one processor; operating the silicon photomultiplier device in an operating reverse bias mode by the operating reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light according to the temperature of the silicon photomultiplier device and the silicon photomultiplier device gain.

[0014] A further embodiment disclosed herein is a non - transitory computer - readable medium configured to have software instructions for causing the execution of a method by at least one processor, the method comprising a silicon photomultiplier device including a plurality of photomultiplier diodes, and at least one processor, wherein the at least one processor operates the silicon photomultiplier device in a reverse - bias mode by a reverse - bias input signal, exposes the silicon photomultiplier device to a predetermined light intensity, measures a reverse - bias output signal from the silicon photomultiplier device, determines the temperature of the silicon photomultiplier device according to the reverse - bias input signal, the reverse - bias output signal, and the predetermined light intensity, determines an operating reverse - bias mode voltage by the at least one processor, operates the silicon photomultiplier device in an operating reverse - bias mode by the operating reverse - bias mode voltage, exposes the silicon photomultiplier device to light from a target object, measures an output signal from the silicon photomultiplier device, and determines the intensity of the light according to the temperature of the silicon photomultiplier device and the silicon photomultiplier device gain, and includes a non - transitory computer - readable medium configured to have software instructions for the foregoing.

Brief Description of the Drawings

[0015]

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Mode for Carrying Out the Invention

[0016] The present disclosure provides systems and computer-implemented methods for determining and accounting for temperature in assay devices and other devices using silicon photomultiplier devices. As discussed herein, the temperature determination systems, devices, and methods can be used to improve the accuracy and speed at which optical detection assay steps are performed. The temperature determination methods, devices, and systems discussed herein incorporate SiPM devices and / or avalanche photodiodes and can be applied to a variety of systems and devices that require temperature compensation for optimal performance. Such devices can include, for example, assay devices and systems, LIDAR units, 3D ranging devices, radiation detection units, PET devices, nephelometry devices, air quality analysis devices, particle analysis devices, photon correlation spectroscopy devices, Raman spectroscopy devices, and any other device that relies on accurate detection of incident light.

[0017] FIG. 1 shows an exemplary silicon photodiode multiplier device (SiPM) 200 that can be included in any SiPM-based optical detection device. The SiPM 200 includes a plurality of photomultiplier diodes (PADs) 201, a power supply 202, and an output monitor 203. The SiPM 200 can include any suitable number of PADs 201 in the range of dozens to hundreds or thousands, including a number of PADs 201 that exceeds 10,000. The PADs 201 are arranged in an m×n or n×m array, where n and m may be equal (square array) or not equal (rectangular array). In alternative embodiments, the PADs 201 can be arranged in any other suitable arrangement, such as hexagonal, circular, etc. Electrically, the PADs 201 are arranged in parallel with each other within the SiPM 200.

[0018] The power supply 202 is controlled to generate a bias voltage across the PAD 201 via, for example, a computer system or other control system as discussed below. The power supply 202 may be a voltage source configured to provide a specific voltage bias, either forward (positive) or reverse (negative), across the PAD 201. The power supply 202 may also be a current source configured to provide a control current to generate a specific voltage bias, either forward (positive) or reverse (negative), across the PAD 201 or a specific current flowing through the PAD 201.

[0019] The output monitor 203 is configured to measure the output of the SiPM 200 during operation. The output monitor 203 may be configured to measure the current output of the SiPM 200. In an embodiment, the output monitor 203 may be configured to measure a voltage with the output of the SiPM 200 and determine a current based on the measured voltage. In some embodiments, the output monitor 203 may include an amplifier circuit configured to amplify the voltage or current output of the SiPM 200.

[0020] During operation, the combined actions of the plurality of PAD201s can be used to determine the amount of light hitting the SiPM200, e.g., the number of photons. The PAD201 is a semiconductor device based on a p-n junction. FIG. 2 is a chart 300 showing the typical voltage-current response of the PAD201. In the forward bias mode, the diode conducts little current until it reaches the threshold voltage 302. When the forward bias mode threshold voltage 302 is exceeded, the diode operates as a short circuit and provides little resistance to the free flow of current. As shown in chart 300, the current through the diode increases rapidly beyond the threshold voltage 302. In the reverse bias mode, when exposed to a negative voltage, the PAD201 has a proportional mode 303, where the current conducted is approximately proportional to the reverse bias voltage. When the reverse bias voltage has a magnitude exceeding the voltage associated with the proportional mode 303, the PAD201 enters a saturation mode 304 where it can increase the voltage without significantly increasing the current flow. Thus, in the saturation mode 304, the diode allows a nearly saturated current flow regardless of the reverse bias voltage. When the reverse bias voltage increases in magnitude beyond the breakdown voltage V Breakdown or V B 309, the PAD201 enters the "Geiger mode". Similar to the forward bias mode threshold voltage 302, the breakdown voltage V B 309 is the reverse bias voltage at which the resistance of the diode significantly decreases and allows an escalated current flow. In the Geiger mode, a small increase in the magnitude of the negative voltage results in a large change in the current conducted.

[0021] During operation for photon detection, the PAD201 has a junction breakdown voltage V BreakdownIt is reverse-biased with a voltage having a magnitude exceeding. A high reverse bias maintains the electric field within PAD201 high enough so that a single charge carrier injected into the depletion layer of PAD201 (i.e., the charge-free region in the P-N junction) can cause an avalanche. Such an avalanche is caused by photons hitting PAD201. PAD201 absorbs the energy of the photons within the depletion layer and releases charge carriers, which then cause an avalanche of charge carriers that causes an output current spike. Due to the decrease in resistance at PAD201 as a current spike, the bias voltage drops to a state where the avalanche can no longer be sustained. Thus, the current spike returns to the current level of saturation mode 304 after reaching its maximum. The magnitude of the reverse bias voltage is returned to the level necessary to trigger an avalanche again for a new read. In this operating reverse bias mode, the reception of photons causes an avalanche that results in a single current spike for the output of PAD201.

[0022] Referring back to FIG. 1, SiPM200 operates through the combined action of a plurality of PAD201. When a plurality of photons (or, more generally, light) impinge on the plurality of PAD201 of SiPM200, they cause a plurality of current spikes across the PAD201 connected in parallel. Due to the parallel nature of the PAD201, the set of individual current spikes output from the plurality of PAD201 connected in parallel are additionally combined at the output monitor 203 and read as an analog current at a level proportional to the combined incidence of photons across all of the PAD201 of SiPM200 (this may, in some cases, indicate the luminance / luminescence of the light impinging on SiPM200). Integrating the total output current spikes over time enables the determination of the total number of output charge carriers. The proportional ratio of the number of output charge carriers to the input photons is the gain of SiPM200. In this way, SiPM200 provides a light detection device that is sensitive to the incidence of one or more photons and has sufficient accuracy to detect the number of incident photons. As discussed above, SiPMs such as SiPM200 can be used in light detection devices and systems (e.g., electrochemiluminescence, fluorescence, and chemiluminescence), LIDAR units, 3D ranging devices, radiation detection units, PET devices, turbidimetry devices, nephelometry devices, air quality analysis devices, particle analysis devices, photon correlation spectroscopy devices, Raman spectroscopy devices, and any other device that relies on the accurate detection of incident light.

[0023] During the operation of SiPM200, or any other SiPM-based light detection device, the temperature of the PAD201 of SiPM200 can be affected by taking measurements. The operation of the PAD201 to conduct a high level of current causes a temperature rise. This temperature rise may be proportional to the amount of current conducted, or otherwise depend on it, and thus may depend on the intensity of the light source being detected. Repeated and / or frequent operation causes a higher level of temperature rise. Additionally, fluctuations in the ambient temperature not caused by the SiPM itself can be experienced by the SiPM within the operating environment.

[0024] The diodes including PAD201 of SiPM200 have temperature-dependent characteristics. For example, the gain of SiPM200, and thus the output response, can vary according to its temperature. Since the gain and output of SiPM200 are changed by its temperature, the temperature of SiPM200 may have to be controlled during use or taken into account in order to maintain maximum accuracy and precision. As discussed above, for example, SiPMs can be used in assay devices and systems, LIDAR units, 3D ranging devices, radiation detection units, PET devices, nephelometry devices, nephrometry devices, air quality analysis devices, particle analysis devices, photon correlation spectroscopy devices, Raman spectroscopy devices, and any other devices that rely on accurate detection of incident light. In each of these devices, systems, or detectors, the lack of accuracy induced by temperature can present challenges for obtaining accurate and consistent measurements. The embodiments discussed herein address these temperature-induced accuracy drawbacks.

[0025] In some embodiments, cooling devices such as fans, heat sinks, Peltier coolers, etc. can be provided within the SiPM-based device to reduce the temperature rise of the SiPM. However, the addition of a cooling device can have the drawbacks of introducing noise and / or vibrations, and / or adding additional components and complexity to the system. In further embodiments, the timing of multiple captures by the SiPM can be adjusted to allow for more cooling time between captures or detections so as to control the temperature rise. However, as the timing between captures increases, the overall read time of the SiPM measurement can increase.

[0026] In a further embodiment, the operating voltage of the SiPM (also referred to as the bias voltage) can be adjusted to compensate for the effect of temperature on the gain of the SiPM (e.g., the ratio between the output current and the amount of incident photons). As will be described in more detail below, the SiPM gain is a function of the overvoltage (i.e., the amount by which the bias voltage exceeds the breakdown voltage). Since the breakdown voltage is temperature-dependent, so is the SiPM gain. If the bias voltage remains fixed, the gain of the SiPM varies linearly with temperature because the breakdown voltage varies linearly with temperature. As the breakdown voltage changes, the overvoltage changes accordingly. If the bias voltage is adjusted to maintain a constant overvoltage (i.e., the voltage across the breakdown voltage), the gain temperature dependence can be eliminated. In yet a further embodiment, the output of the SiPM can be calibrated according to the gain temperature dependence after (or before) each capture or detection in order to determine the appropriate amount of incident photons by calculating the temperature-adjusted gain after (or before) each measurement.

[0027] Some embodiments that take temperature into account may involve the use of a separate additional sensor (e.g., a temperature sensor) to provide information about the temperature of the SiPM. If the separate additional sensor (e.g., a temperature sensor) is not integrated into the SiPM chip packaging, it can be attached outside the SiPM. External attachment can introduce a time lag between the change in the SiPM temperature and its measurement by the external temperature sensor. Such a delay can make it difficult to achieve timely compensation for SiPM temperature changes and can cause a loss of sensor accuracy and precision. Even when built into the SiPM chip packaging, the thermal delay between the PAD of the SiPM and the temperature sensor itself can compromise the accuracy and precision of the sensor. In a further embodiment, when considering temperature, the temperature sensor may be integrated within the SiPM chip packaging. In yet a further embodiment, the SiPM can be used as a temperature sensor to enable the consideration or adjustment of the SiPM temperature.

[0028] Figure 3 schematically shows a SiPM 200 incorporated into an exemplary photodetection device 301 configured to use the SiPM as a temperature sensor. As discussed above, the photodetection device 301 can include any device configured to perform measurements through photon detection with the SiPM 200. Thus, the photodetection device 301 can include, for example, a photodetection assay unit (e.g., electrochemiluminescence, fluorescence, and chemiluminescence), a radiation detection device, a LIDAR device, a 3D ranging device, a low light level detector, a PET scanner, and others. The photodetection unit 301 includes a housing 310, a SiPM 200 including a plurality of PADs 201 (not shown), a power supply 202, and an output monitor 203. The photodetection device 301 can include a computer system 502 and / or can be connected to a computer system 502, as will be described in more detail below with respect to FIG. 4.

[0029] During operation, the photodetection device 301 is configured to receive photons 320 emitted from, reflected by, or moving from a target object 350. The target object 350 can be any object, substance, etc. being measured by the photodetection device 301. The SiPM 200 is powered by the power supply 202. The photons 320 strike the PADs 201 of the SiPM 200, and the measurement of the incident light intensity is made through a reading performed by the output monitor 203. In an embodiment, the computer system 502 is configured to control various aspects of the photodetection device 301, as will be discussed in more detail below.

[0030] The embodiments described below with respect to FIGS. 4-10 are configured to measure the SiPM temperature and / or calibrate the SiPM device to obtain more accurate data under varying temperature conditions. Specifically, as described below with respect to FIGS. 5, 9, and 10, the characteristics of the SiPM can be used to detect or determine the temperature of the SiPM. Thus, the SiPM itself can be used as a thermometer to detect its own temperature. In a further embodiment, as described below with respect to FIGS. 7 and 8, the temperature change of the SiPM can be accounted for through calibration via a known light source.

[0031] FIG. 4 shows an embodiment of a computer system consistent with an embodiment of this specification. Computing system 502 is an example of a computing system configured to operate and / or interface with an SiPM-based optical detection system discussed herein. Examples of computing system 502 can include a server, a personal computer, a smartphone, and / or a tablet computing device. Additionally, the functionality of computing system 502 can be executed via a cloud computing platform. In an embodiment, computing system 502 is composed of all of the hardware and software necessary to operate various aspects of an assay system or device, such as assay device 101 discussed below with respect to FIG. 12. The structure and functionality of computing system 502 are discussed below for purposes of illustration only with respect to an assay device such as assay device 101 and with respect to an SiPM such as SiPM 200. Computing system 502 is not limited to the specific hardware whose function or operation is discussed herein and can be used to operate or interface with any suitable assay device or SiPM.

[0032] The computing system 502 may include one or more processors 510 (for convenience, also synonymously referred to herein as processing unit 510, processor 510), one or more memory devices 530, and / or other components. In other embodiments, the functions of the processor may be performed by hardware (e.g., by the use of application specific integrated circuits (“ASICs”), programmable gate arrays (“PGAs”), field programmable gate arrays (“FPGAs”), etc.) or by any combination of hardware and software. The memory device 530 includes any type of non-transitory computer-readable storage medium and / or non-transitory computer-readable storage device. Such a computer-readable storage medium or device may store computer-readable program instructions for causing a processor (e.g., 510) to execute one or more of the methodologies described herein. Examples of computer-readable storage media or devices include, but are not limited to, electronic storage devices, magnetic storage devices, optical storage devices, electromagnetic storage devices, semiconductor storage devices, or any suitable combination thereof, such as computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), static random access memory (SRAM), portable compact disk read-only memory (CD-ROM), digital versatile disk (DVD), memory stick, etc., but are not limited thereto.

[0033] The processor 510 is programmed by one or more computer program instructions stored in the memory device 530 and executable by the processor 510. For example, the processor 510 is programmed by the SiPM input manager 512, the SiPM output manager 514, the temperature determination manager 516, the protocol manager 518, the data manager 520, and the user interface manager 522. It will be understood that the functions of the various managers as described herein are representative and not limiting. As used herein, for convenience, the various "managers" are described as actually performing the operations when the manager programs the processor 510 (and thus the computing system 502) to perform the operations.

[0034] The SiPM input manager 512 is a software protocol (e.g., a software module or library) that can operate on the computing system 502. The SiPM input manager 512 is configured to interface with and provide control over the power input to the SiPM 200 of the assay device, for example. For example, the SiPM input manager 512 can be configured to provide control over the power input (e.g., the operating voltage) provided to the SiPM 200 by the power supply 202. The SiPM input manager 512 is further configured to communicate with various other managers and software protocols operating on the computing system 502 to perform its required functions.

[0035] The SiPM output manager 514 is a software protocol (e.g., a software module or library) that can operate on the computing system 502. The SiPM output manager 514 is configured to receive output data as measured, for example, by the output monitor 203. For example, the SiPM output manager 514 can be configured to provide control to the output monitor 203 and receive measurement values from the output monitor 203. The SiPM output manager 514 is further configured to communicate with various other managers and software protocols operating on the computing system 502 to perform its necessary functions.

[0036] The temperature determination manager 516 is a software protocol (e.g., a software module or library) that can operate on the computing system 502. The temperature determination manager 516 is configured to interact with the SiPM input manager 512 and the SiPM output manager 514 and receive data from the SiPM input manager 512 and the SiPM output manager 514, for example, to determine the temperature of the SiPM of the assay device. The temperature determination manager 516 is further configured to communicate with various other managers and software protocols operating on the computing system 502 to perform its necessary functions.

[0037] The SiPM input manager 512, the SiPM output manager 514, and the temperature determination manager 516 operate in cooperation to determine the SiPM temperature before, during, and / or after the sample assay measurement to account for SiPM gain variations caused by temperature fluctuations. The operations and specific steps, calculations, and algorithms for determining and considering the temperature of the SiPM are described in more detail below with respect to FIG. 5.

[0038] The protocol manager 518 is a software protocol (e.g., a software module or library) that can operate on the computing system 502. The protocol manager 518 is configured to provide one or more control signals to, for example, the light detection device 301 controlled by the protocol manager 518. The control signals provided by the protocol manager 518 are configured to provide the instructions necessary to operate the light detection device 301. The control signals may specify one or more operations to be performed by the light detection device 301. Using the control signals provided by the protocol manager 518, any process enabled by the light detection device 301 described herein can be initiated and / or controlled.

[0039] In some embodiments, the protocol manager 518 can be configured to control one or more assay devices, such as the assay device 101, as shown, for example, in FIG. 12. The protocol manager 518 can be configured to operate to control one or more assay devices 101 to perform a sample assay. In such embodiments, the target object 350 can include a sample contained within a multi-well sample plate of the assay device 101, as further discussed below with respect to FIG. 12, for example. The assay device 101 can be controlled by the protocol manager 518 to obtain sample assay measurements for a plurality of test samples having an unknown amount of analyte (e.g., test samples disposed in a multi-well plate). The protocol manager 518 can operate to determine sample assay signal values corresponding to the plurality of test samples. The protocol manager 518 is configured to perform a sample assay to determine one or more sample assay data sets. The sample assay data set can include information associating the sample assay signal values with sample identification data. The sample identification data can include any suitable data for identifying the test sample, such as the position of the plate.

[0040] In an embodiment, the protocol manager 518 is configured to interact, for example, with the SiPM input manager 512, the SiPM output manager 514, and the temperature determination manager 516 to determine the SiPM temperature before, during, and / or after the target object measurement in order to account for SiPM gain variations caused by temperature fluctuations. The protocol manager 518 is further configured to communicate with various other managers and software protocols operating on the computing system 502 to perform its necessary functions.

[0041] The protocol manager 518 is further configured to manage, control, and / or otherwise facilitate the functions and operations of the photodetection device 301 according to the steps, procedures, algorithms, and methods outlined with respect to FIGS. 6, 9, and 10.

[0042] The data manager 520 is a software protocol or software module that can operate on the computing system 502. The data manager 520 is configured to access temperature determination data. The temperature determination data can include any and all data, models, correlations, etc., generated by or requested by the computing system 502 to determine the SiPM temperature and account for assay results based on the SiPM temperature. In a further embodiment, the data manager 520 is configured to access various removable physical storage media that can store assay data.

[0043] In further embodiments related to the control of the assay device 101, the data manager 520 is configured to access assay data, such as, for example, sample assay data and calibration assay data of one or more assay devices 101. The assay data can include, for example, sample assay data sets and calibration data sets that can be obtained substantially in real time, can be archived data, and / or can be data extraction, as well as process information and process parameter information, and any other information or data generated by or stored in the assay device 101.

[0044] The data manager 520 can provide data to the user via the user interface manager 522. In an embodiment, the data manager 520 is further configured to provide the user with access tools for managing and manipulating any and all data associated with the light detection device 301 (also referred to as assay system data). For example, the data manager 520 can be configured to generate reports, reconcile with system data, reference system data, enter system data into a database, etc. In an embodiment, the data manager 520 can provide data retention capabilities. The data manager 520 is further configured to receive and store any and all data collected and / or used by the light detection device 301. The data manager 520 is further configured to communicate with various other managers and software protocols operating on the computing system 502 to perform its required functions.

[0045] The user interface manager 522 is a software protocol (e.g., a software module or library) that operates on the computing system 502. The user interface manager 522 is configured to provide, for example, a user interface to enable user interaction with the computing system 502. The user interface manager 522 is configured to receive input from any user input source including, but not limited to, a touch screen, keyboard, mouse, controller, joystick, voice control. The user interface manager 522 is configured to provide a user interface such as a text-based user interface, a graphical user interface, or any other suitable user interface.

[0046] The user interface manager 522 is configured to provide, for example, a user authentication service. The user can be authenticated via, for example, a password, biometric scan (retinal scan, fingerprint, voiceprint, face recognition, etc.), key card, token access, and any other suitable means of user authentication. The user authentication service can be provided to control access to one or more assay devices 101. The user interface manager 522 is further configured to communicate with various other managers and software protocols operating on the computing system 502 to perform its required functions.

[0047] As discussed herein, various managers may be implemented by any combination of computing devices. Although described herein as being operable on a single computing system 502, the various managers and protocols described herein may operate in a distributed fashion across multiple computing devices and / or in conjunction with cloud processing. Accordingly, the functionality of the various managers and software protocols described herein may occur at different physical locations without departing from the scope of the present disclosure. For example, aspects of the temperature determination manager may be performed by a user on a different computing system after all data has been collected by a computing system associated with the assay device.

[0048] FIG. 5 is a flowchart illustrating an exemplary method for obtaining temperature-corrected assay data. More specifically, FIG. 5 shows a process 600 for obtaining temperature-corrected data using temperature determinations made by a computer system while operating an SiPM in forward bias mode. Process 600 is executed on one or more computer systems, such as computer system 502, having one or more physical processors (e.g., 510) programmed with computer program instructions that cause the computer system to execute the method when executed by the one or more physical processors. Process 600 is further executed using one or more photodetection devices 301, including an assay device 101 having one or more SiPM devices, such as SiPM 200. In an embodiment, process 600 is executed via a photodetection device 301 having one or more computer systems 502 and SiPM 200. The one or more computer systems 502 may be associated with and / or communicate with the photodetection device 301. Although described with respect to the specific photodetection devices, assay devices, and SiPMs described herein, process 600 is not limited thereto and may be used with any suitable assay device and / or SiPM.

[0049] Computing system 502 represents an example of a combination of hardware and software configured to execute process 600, but the implementation of process 600 is not limited to the combination of hardware and software of computing system 502. In further embodiments, process 600 may be implemented exclusively in hardware and / or firmware. Additional details regarding each of the operations of the method may be understood in accordance with the description of computing system 502 as described above. Process 600 is described with respect to specific hardware and software for purposes of illustration, but may be executed via any suitable hardware and / or software capable of performing the described actions or steps. The following aspects of process 600 may be executed by various managers and software protocols of the computing system. In particular, the following aspects may be orchestrated and executed in accordance with an overall assay process that is operated and managed by protocol manager 518.

[0050] In operation 602 of process 600, a SiPM (e.g., SiPM 200) is operated in a forward bias voltage mode. For example, SiPM input manager 512 is configured to control a power supply (e.g., 202) to operate the SiPM. The power supply is controlled to operate the SiPM in a forward bias voltage mode by applying, for example, either a positive fixed current or a positive fixed voltage as a forward bias mode input signal to one or more PADs (e.g., 201) of the SiPM. When operating in the forward bias mode, photons incident on the SiPM (e.g., from ambient light) do not cause a change in the output current from the SiPM.

[0051] In operation 604, the output monitor (e.g., 203) and / or the SiPM output manager (e.g., 514) measures or detects a response to operation in the forward bias voltage mode. The output monitor may be configured to measure or determine an output current and / or an output voltage induced in response to the forward bias operation of the SiPM. The SiPM output manager is configured to control the output monitor to determine an output current or output voltage and receive a measured value of the output current or output voltage as a forward bias mode response signal.

[0052] In operation 606, the computer system determines the temperature of the SiPM based on the forward bias operation and its response. In the forward bias mode, the PAD of the SiPM (e.g., 201) may operate according to the Shockley ideal diode equation including temperature dependence. As will be described in detail below, the temperature determination manager 516 operates to determine the temperature of the SiPM according to the forward bias mode input signal and the forward bias mode response signal.

[0053] In one example, the current conducted through an ideal diode can be described by Equation 1, which is the Shockley diode equation.

Equation

[0054] The Shockley diode equation provides the relationship between the current I D and the voltage V D of the diode in both the forward bias configuration and the reverse bias configuration. In Equation 1, q is the electron charge, k B is the Boltzmann constant, T is the absolute temperature (Kelvin) of the diode junction, and V Dis the voltage across the diode. The ideality factor n, typically varying between 1 and 2, represents the quality or emission factor of the diode in use. The ideality factor n explains the recombination of holes with free electrons in the depletion region and is a function of the semiconductor material and doping level. n is fixed for a given diode and can vary widely between individual diodes. The ideality factor n can be set to 1 in an "ideal" diode. I S is the reverse bias saturation current obtained by Equation 2. [Number]

[0055] Equation 2 provides the temperature dependence of the reverse bias saturation current (I S ), and thus drives at least in part the temperature dependence of the diode current I D . In Equation 2, A is a constant coefficient that depends mainly on manufacturing factors such as the shape and doping of the semiconductor junction region, and Eg is the semiconductor bandgap. Semiconductor doping refers to the process of introducing impurities into the diode semiconductor to manipulate and / or adjust the electrical properties of the semiconductor (and thus the diode). The bandgap of silicon is approximately 1.17 eV at 0 K and approximately 1.11 eV at 300 K. For diodes consistent with the embodiments herein, the bandgap can be measured between approximately 0.67 eV and 1.30 eV, or between 1.10 eV and 1.30 eV. I D , that is, Equation 1 for the diode current is non-linear. However, it is possible to identify operating parameters that result in approximately linear behavior over a useful temperature range.

[0056] Equation 1 can be solved for the voltage V D as shown in Equation 3. [Number] This equation cannot be solved directly to implement the calculation of T from V D and I D , but the constants A, n, Eg, q, and kB Prior knowledge of D V and I D enables the use of a numerical method for determining T from a single measurement of V and I. Thus, using Equation 3, the temperature of the diode can be determined based on the voltage and current across the diode.

[0057] When applied to a SiPM device such as SiPM200, Equation 3 can be modified to account for additional circuitry within SiPM200. For example, in one embodiment, SiPM200 may include a plurality of quenching resistors incorporated into PAD201 as discussed above. For the purposes of the temperature analysis discussed herein, SiPM200 and the plurality of quenching resistors can be modeled as a single diode 278 having a series quenching resistor 279 (R Q ). The voltage V across the diode D cannot be measured directly and must be determined according to the voltage V measured across SiPM200 minus the voltage (V RQ ) across quenching resistor 279. V SIPM is the current I RQ across quenching resistor 279 times the resistance R of the quenching resistor Q . Accordingly, modifying Equation 3 leads to Equation 4. D

Number

[0058] Equation 4 was tested against data experimentally obtained from a SiPM device, Hamamatsu S13360-6075CS. Using n = 1.0 (experimentally obtained), and R Q = 43.8 ohms, T, V D , and I DWith the measured values, A was determined using a numerical method. A was determined to be about 622 amperes for this device. These values are only for the specifically cited SiPM device as an example. Different SiPM devices may have different values for these terms. Individual ones of the same type of SiPM device may also have different values for these terms according to manufacturing variations.

[0059] Figure 13 shows the results of several test runs using the SiPM device of Hamamatsu S13360-6025CS, where the temperature and voltage were measured at a constant current as the temperature changed within the temperature control chamber. Chart 1301 shown in Figure 13 shows the correlation between voltage and temperature that is consistent over multiple runs, indicating the experimental validity of determining the SiPM temperature using the measured voltage.

[0060] As discussed above, for a constant current, the voltage across the diode varies with temperature. Thus, when the materials and calibration constants of Equation 4 are selected, the temperature of the diode can be measured by maintaining a constant current across the diode by a power supply (e.g., 202) and measuring the voltage V SIPM generated by the supplied constant current.

[0061] Returning now to Figure 5, in operation 606, a computer system, e.g., the temperature determination manager 516, can determine the temperature of the SiPM by comparing the current provided by a power supply (e.g., 202) with the voltage measured by an output monitor (e.g., 203). The SiPM temperature can be determined according to the correlation between the voltage across both ends of the SiPM200 (i.e., across a plurality of PADs, e.g., 201) and the current passing through the SiPM200 (i.e., through a plurality of PADs) in the forward bias mode.

[0062] In a further embodiment, when the forward bias voltage is provided by a constant voltage source, the computer system may be configured to determine the resulting current based on the measurement received from the output monitor. Next, the provided voltage and the measured current may be used with Equation 4, as discussed above, to determine the diode temperature. Equation 4 may not be solvable for temperature T, but T can be determined according to appropriate values for the constants and measurements for voltage and current using a direct numerical solution. The values of the constants discussed herein may vary according to the type and arrangement of the devices used and may be appropriately determined through experimentation for use in a practical arrangement of a silicon photomultiplier device. FIG. 16 provides a diagram of the results of operation 606. Chart 1601 of FIG. 16 shows a comparison of the temperature during SiPM operation via conventional means (e.g., a temperature sensor) when compared to the temperature estimated by the methods and techniques discussed herein. Specifically, FIG. 16 shows the SiPM temperature estimated by Equation 4 and the voltage and current measurements associated with operation 606. As shown in FIG. 16, the estimated temperature and the measured temperature show a high degree of correspondence, indicating that the method of operation 606 can accurately measure the SiPM temperature.

[0063] In a further embodiment, the SiPM temperature may be determined according to the two-point method. Operations 602 and 604 may each be performed twice, operating the SiPM in forward bias mode at two different currents (I D1 and I D2 ) and measuring two different voltages (V D1 and V D2 ). The two operations may each be performed for a short time and with a short delay between them, which may prevent any significant or substantial change in the diode temperature due to the repeated operations.

[0064] After the operations and measurements in operations 602 and 604, operation 606 may be performed to measure the temperature as follows.

[0065] Equation 5 defines the ratio of the two current and voltage measurements based on Equation 1 above. [Number]

[0066] This term [Number] is much larger than 1 at temperatures within the expected range of the SiPM, e.g., below 40 °C. For example, taking the Hamamatsu S13360-6075CS SiPM device as an example, at a temperature of 29 °C, this term results in approximately 1.3×10 9 . Therefore, Equation 5 can be approximated according to Equation 6. [Number]

[0067] Equation 6 can be simplified to solve for T and can result in Equation 7. [Number]

[0068] As discussed above, in some embodiments, due to the diode structure including the quench resistance, V D may not be directly measurable. In such cases, the resistance R Q of the quench resistance must be considered. Considering this term in Equation 7 leads to Equation 8. [Number]

[0069] Equation 8 provides a direct estimation of the SiPM temperature T based on the measurement of two different currents and two different voltages without the need for a numerical solution.

[0070] The simplifying assumptions made to generate Equation 7 can introduce potential errors between the calculated temperature and the measured temperature. The theoretical errors in the temperature range of 250K to 350K were calculated using Equation 4, for selected temperatures within the temperature range of 250 to 350K and four different currents I D (10 μA, 100 μA, 1 mA, and 5 mA) of V SIPM The expected values were determined. The calculated V SIPM values and I D values were then used in Equation 8 to determine the temperature calculated by the two-point method. Next, the temperature calculated by the two-point method and the selected temperature were compared for absolute temperature error. Figure 14 shows the absolute error between the temperature calculated by the two-point method and the selected temperature, plotted against the selected temperature. As shown in Chart 1401 of Figure 14, for operating temperatures below 350K, the error calculated due to the simplifying assumptions in the two-point method is less than 0.1°C. When the values of the two currents are selected as 500 μA and 5 mA, the absolute error decreases to less than 0.02°C at temperatures below 350K. At typical operating temperatures, e.g., below 313K (40°C), the absolute error is negligible. Figure 15 shows a graph representing the amount of measurement error in K due to noise in the measured voltage. In Figure 15, the voltage measurements are exposed to noise up to 20 μV (peak-to-peak). As shown in Chart 1501 of Figure 15, the error remains less than 0.2°C in the presence of up to 20 μV (peak-to-peak) of noise in the two measured voltages. Therefore, the two-point method represents an accurate way to determine the SiPM temperature in the expected operating temperature range below 350K.

[0071] In operation 608, after the temperature is measured, the power supply (e.g., 202) is controlled by the SiPM input manager (e.g., 512) to apply an operating reverse bias voltage to one or more PADs 201 of the SiPM 200 by applying an operation input signal. Accordingly, the SiPM enters the operating reverse bias mode. Applying the operating reverse bias voltage prepares the SiPM 200 for measuring output photons from the target object 350. The operating reverse bias voltage applied is determined by the computer system according to the temperature dependence of the breakdown voltage, for example, to maintain a constant overvoltage between measurements. The gain G of the SiPM is obtained by Equation 8. [Number]

[0072] In Equation 9, Cj is the total capacitance of the SiPM, q is the elementary charge, and as discussed, V Br (breakdown voltage) is temperature-dependent. By selecting the operating reverse bias voltage V Bias according to the temperature associated with each specific measurement value, the computer system protocol manager can ensure that the gain G remains constant. FIG. 7 shows a graph 701 showing the temperature dependence of the breakdown voltage in an exemplary SiPM device (Hamamatsu S13360-3050CS). Accordingly, for example, the measured temperature from operations 606 and Equation 8 can be used to estimate or determine the current value of V Br , and thus the computer system protocol manager can select an appropriate reverse bias voltage V Bias to maintain a constant gain G.

[0073] In a further embodiment, the operating reverse bias voltage can be selected to maintain a constant reverse bias voltage (and thus a variable overvoltage) between optical detection measurements. Accordingly, the protocol manager can select a predetermined operating reverse bias voltage and apply it to the SiPM.

[0074] In operation 610, the SiPM is exposed to photons, or more generally light (e.g., visible light, infrared, ultraviolet, etc.), that is reflected from, emitted by, or otherwise generated by the target object. Any process or operation that generates photons can be measured during operation 610. Exposing the SiPM to photons results in one or more photons hitting the PAD of the SiPM. As described above with respect to FIGS. 2 and 3, exposing the SiPM to one or more photons induces an analog output current response.

[0075] In one embodiment involving an assay measurement, the photons can be generated during an assay process such as electrochemiluminescence. Any test process that generates photons can be used. For example, the assay device can be configured to expose one or more samples within the sample wells of a multi-well sample plate to an electric field that generates photons in a solvent, e.g., by electrochemiluminescence.

[0076] In operation 612, the computer system (e.g., 502) measures, receives, or otherwise determines the output current response from the SiPM in response to the incident photons. The measured output current is integrated over time to determine the total amount of charge measured by the output monitor in response to the photon exposure. The relationship between the total amount of charge measured by the output monitor and the number of photons hitting the SiPM is the gain G of the SiPM. The total charge measured by the output monitor can be divided by the gain to determine the number or amount of photons to which the SiPM was exposed during the exposure.

[0077] In embodiments where the overvoltage is maintained at a constant level, the gain is likewise maintained at a constant level. Thus, determining the light intensity (i.e., the number of incident photons) can be achieved by dividing the measured total charge output by a predetermined constant gain G.

[0078] In a further embodiment where the operating inverse bias voltage is maintained at a predetermined constant level, the measured temperature can be used to determine the gain G according to a look-up table or equation specific to either the SiPM device or the photodiode being used. The determined gain G can then be used to determine the light intensity (i.e., the number of incident photons) by dividing the measured total charge output by the predetermined constant gain G.

[0079] The process 600 of obtaining temperature-corrected assay data can, in some embodiments, be executed according to operations 602 - 612 in the order they are described above. In further embodiments, process 600 can include more or fewer operations than operations 602 - 612 described above, can include operations in a different order, and / or can include some operations multiple times.

[0080] For example, in some embodiments, the temperature of the SiPM may be measured after the light detection data is captured. In further embodiments, the temperature of the SiPM can be measured both before and after the light detection data is captured. In such embodiments, the operating inverse bias voltage (and not the overvoltage) can be maintained as constant. The measurements before and after can be combined and the temperature during the data capture operation can be estimated. Based on the temperature at the time of measurement, the gain can be calculated. The gain can then be used to determine the incident light intensity.

[0081] The computer system then uses the recorded temperature of the SiPM to determine the intensity of the light (or photons) hitting the SiPM according to the temperature and the response signal. Knowledge of the recorded temperature immediately before (or after) the current detection enables an accurate determination of the output light intensity according to the equation described above with respect to operation 606.

[0082] As described above, Equations 1-9 are used in an exemplary method for determining the SiPM temperature based on measurement values generated in the forward bias voltage mode and adjusting or taking into account the determined temperature. In the forward bias voltage mode, as described above, the SiPM can function as a thermometer. The methods described with respect to Equations 1-9 above are provided by way of example only. In further embodiments, Equations 1-9 can be modified as needed according to the particular components of the SiPM device being used. For example, the use of different diodes and / or different circuits within the SiPM may require modification of the selected equation. In further embodiments, as described above, a correlation and / or look-up table providing a correlation between the operating circuit parameters and temperature can be used instead of a particular equation. In embodiments, such a correlation and / or look-up table can be used in one or both of determining the temperature based on the forward bias voltage input and taking into account the temperature when making SiPM measurements under reverse bias conditions. Such a correlation and / or look-up table can be established, for example, based on the equations described above and / or on modified versions of these equations. In further embodiments, such a correlation and / or look-up table can be established at least partially experimentally.

[0083] FIG. 8 shows a light detection device 801 composed of a reference light source 830. The light detection device 801 includes a housing 810, a silicon photomultiplier device (SiPM) 800 having a plurality of photomultiplier diodes (PADs) (not shown), a power supply 802, and an output monitor 803. The SiPM 800 is arranged to face one or more target objects 850 within the housing 810. The SiPM 800 is configured and arranged to receive light emitted from the target object 850 during a light detection measurement. The SiPM is arranged to receive input power (e.g., voltage or current input) via the power supply 802 and generate an output signal (e.g., voltage or current output) that can be detected or monitored by the output monitor 803. In the example of FIG. 8, the assay device 101 further includes a light source 830. The light source 830 is a device configured to selectively output light and may include, for example, one or more of an LED, a diode laser, a halogen, an incandescent, and a fluorescent bulb. The light source 830 may be a stable light source configured to selectively provide high-precision and accurate light intensity. The light source 830 is arranged within the housing 810 such that a predefined light intensity generated by the light source 830 falls on or hits the SiPM 800. The light source 830 is configured and positioned within the housing 810 so as not to interfere with the optical path required for light to reach the SiPM from the target object 850. In some embodiments, the light source 830 may be configured and arranged to be movable, for example, to move out of the optical path after being used to irradiate the SiPM 800.

[0084] In the example of FIG. 8, the light source 830 is configured to selectively irradiate the SiPM 800 at a predetermined level (e.g., a predetermined intensity, a predetermined number of photons, a predetermined luminance, etc.). Since the amount and intensity of the light hitting the SiPM 800 are predefined and known, the temperature of the SiPM 800 can be determined from the voltage (e.g., input voltage), current (e.g., output current), and the known light intensity. As discussed above, the gain of the SiPM 800 when operating at a fixed operating bias voltage depends on the temperature of the SiPM 800. The gain of the SiPM 800 can be determined according to the relationship between the known input light intensity and the output current as discussed above. Since the gain at a specific bias voltage depends on the temperature, the temperature of the SiPM can be determined according to the gain and the input voltage. The correlation between the temperature and the gain of a specific SiPM hardware in use can be determined based on, for example, an appropriate look-up table, data table entry, and / or formula according to the specifications of the SiPM hardware in use. Therefore, the temperature of the SiPM 800 can be determined by measuring the gain of the SiPM 800.

[0085] FIG. 9 is a flowchart showing a method for obtaining temperature-corrected photodetector measurement data. More specifically, FIG. 9 shows a process 900 for obtaining temperature-corrected data using temperature determination performed by a computing system (e.g., 502) when exposing a SiPM to a known light intensity. Process 900 is executed on one or more computer systems, such as computer system 502, having one or more physical processors programmed with computer program instructions that cause the computer system to execute the method / process when executed by the one or more physical processors. In an embodiment, process 900 is further executed using one or more photodetector devices, such as photodetector device 801. In an embodiment, process 900 is executed via one or more computing systems 502 and photodetector devices 801. Although described with respect to the particular photodetector devices and SiPMs described herein, process 900 is not limited thereto and can be used with any suitable photodetector device and / or SiPM (including assay devices and systems).

[0086] Computing system 502 represents an example of a combination of hardware and software configured to execute process 900, but the implementation of process 900 is not limited to the combination of hardware and software of computing system 502. In further embodiments, process 900 can be implemented exclusively in hardware and / or firmware. Additional details regarding each of the operations of the method can be understood according to the description of computing system 502 as described above. Process 900 is described with respect to specific hardware and software for purposes of illustration, but can be executed via any suitable hardware and / or software capable of performing the described actions or steps. The following aspects of process 900 can be executed by various managers and software protocols of the computing system. In particular, the following aspects can be orchestrated and executed according to the overall assay process, for example, operated and managed by protocol manager 518.

[0087] In operation 902, the SiPM is operated in a reverse bias voltage mode (also referred to as the reverse bias mode). The SiPM can be operated in the reverse bias mode via an operation input signal. For example, the SiPM input manager 512 is configured to control a power supply (e.g., 502) to operate the SiPM in the reverse bias voltage mode by applying either a negative current or a negative voltage to the SiPM as a reverse bias input signal. In an embodiment, the SiPM can operate at a reverse bias voltage having a magnitude lower than the breakdown voltage (i.e., lower than the Geiger mode). Since the output response of the SiPM below the Geiger mode is significantly reduced compared to the Geiger mode response, heating of the SiPM during exposure to a known light source / known light intensity is minimized or eliminated.

[0088] In operation 904, a known light source (e.g., 830) is used to provide the SiPM with a specified amount of light intensity, e.g., a high-precision number of photons. The light source can be controlled, for example, by the protocol manager 518. Exposure to the light source results in a reverse bias output signal from the SiPM, e.g., an output current response.

[0089] In operation 906, the SiPM response to a predetermined or known light source is measured, and the reverse bias output signal of the SiPM is detected by an output monitor. The SiPM output manager is configured to control the output monitor to determine the reverse bias output signal and is configured to receive a measured value of the output current or output signal. The output signal is integrated over time to determine the total charge emitted by the SiPM in response to the photon exposure.

[0090] In operation 908, the temperature of the SiPM is determined. As discussed above, the gain of the SiPM varies with temperature. The gain of the SiPM can be determined or calculated according to the input reverse bias voltage, the measured total output charge, and a predetermined or known light intensity from the light source, i.e., according to Equation 8. Next, the determined gain of the SiPM can be compared with a predetermined and / or pre-defined correlation between the gain and temperature for the SiPM to determine the temperature of the SiPM. Thus, a temperature determination manager (e.g., 516) can determine and / or calculate the gain of the SiPM according to the reverse bias input signal, the reverse bias output signal, and a predetermined light intensity. Then, the calculated and / or determined gain can be used to determine the temperature of the SiPM.

[0091] In operation 910, after the temperature is measured or determined, the power supply is controlled by a SiPM input manager (e.g., 512) to apply an operating reverse bias voltage to the SiPM by an operation input signal. In an embodiment, the operating reverse bias voltage has a magnitude greater than the breakdown voltage, and thus puts the SiPM into an operating Geiger mode. Thus, the SiPM enters an operating reverse bias mode. Applying the operating reverse bias voltage prepares the SiPM to measure output photons from the target object. The operating reverse bias voltage applied is determined by the computer system according to the temperature dependence of the breakdown voltage, e.g., to maintain a constant overvoltage between measurements. By selecting the operating reverse bias voltage V Bias associated with each particular measured value, the computer system protocol manager can ensure that the gain G remains constant.

[0092] In a further embodiment, the operating reverse bias voltage can be selected to maintain a constant reverse bias voltage (and thus a variable overvoltage) between optical detection measurements. Thus, the protocol manager can select a predetermined operating reverse bias voltage and apply it to the SiPM.

[0093] In operation 912, the SiPM is exposed to the light generated during the measurement operation, more specifically, photons. In one embodiment involving an assay measurement, the photons can be generated during an assay process such as electrochemiluminescence. Any test process that generates photons can be used. For example, the assay device can be configured to expose one or more samples within the sample wells of a multi-well sample plate to an electric field that generates photons in a solvent, for example, by electrochemiluminescence. Exposing the SiPM to photons results in one or more photons hitting the PAD of the SiPM. As described above with respect to FIGS. 1 and 2, exposing the SiPM to one or more photons induces an analog output current response.

[0094] In operation 914, the output monitor (e.g., 203) is controlled by the SiPM output manager to measure, receive, or otherwise determine the response signal from the SiPM, e.g., the output current response, in response to the incident photons. A computer system (e.g., the SiPM output manager) receives the response signal and determines the intensity of the light (or photons) hitting the SiPM using a constant gain of the SiPM. Since the operating reverse bias voltage is selected to provide a constant overvoltage regardless of the SiPM temperature, the gain of the SiPM is maintained at a constant value. Thus, the intensity of the light hitting the SiPM (e.g., the number of photons) can be determined according to a constant gain. Thus, determining the light intensity (i.e., the number of incident photons) can be achieved by dividing the measured total charge output by a predetermined constant gain G.

[0095] In a further embodiment where the operating reverse bias voltage is maintained at a predetermined constant level, the measured temperature can be used to determine the gain G according to a look-up table or formula specific to either the SiPM device or photodiode being used. The determined gain G can then be used to determine the light intensity (i.e., the number of incident photons) by dividing the measured total charge output by the predetermined constant gain G. Measuring the recorded temperature immediately before (or after) applying the operating reverse bias voltage enables an accurate determination of the output light intensity during the measurement.

[0096] In some embodiments, the process 900 of obtaining temperature-corrected assay data may be executed according to operations 902-912 in the order they are described above. In further embodiments, the process 900 may include more or fewer operations than operations 902-912 described above, may include operations in a different order, and / or may include some operations multiple times.

[0097] For example, in some embodiments, the temperature of the SiPM may be measured after the light detection data has been captured. In further embodiments, the temperature of the SiPM may be measured both before and after the light detection data is captured. In such embodiments, the operating reverse bias voltage (and not the overvoltage) is maintained constant. The measurements before and after are combined, and the temperature during the data capture operation can be estimated. Based on the temperature at the time of measurement, the gain can be calculated. Then, the gain can be used to determine the incident light intensity.

[0098] FIG. 10 is a flowchart showing a method for obtaining temperature-corrected light detection data. FIG. 10 shows a process 1000 for obtaining temperature-corrected light detection data using temperature determination performed by a computing system when operating an SiPM under reverse bias conditions. The process 1000 is executed on one or more computer systems, such as a computer system 502, having one or more physical processors programmed with computer program instructions that cause the computer system to perform the method when executed by the one or more physical processors. The process 1000 is further executed using one or more light detection devices, such as a light detection device 301 or a light detection device 801. In embodiments, the process 1000 is executed via one or more computing systems 502 and light detection devices as described above. Although described with respect to the specific assay devices and SiPMs described herein, the process 1000 is not limited thereto and can be used in SiPM devices including any suitable light detection device or assay device and system.

[0099] Computing system 502 represents an example of a combination of hardware and software configured to execute process 1000, but the implementation of process 1000 is not limited to the combination of hardware and software of computing system 502. In further embodiments, process 1000 may be implemented exclusively in hardware and / or firmware. Additional details regarding each of the operations of the method may be understood in accordance with the description of computing system 502 as described above. Process 1000 is described with respect to specific hardware and software for purposes of illustration, but may be executed via any suitable hardware and / or software capable of performing the described actions or steps. The following aspects of process 1000 may be executed by various managers and software protocols of a computing system. In particular, the following aspects may be orchestrated and executed in accordance with an overall assay process that is operated and managed by a protocol manager.

[0100] In operation 1002, the SiPM is operated in a reverse bias mode below the breakdown voltage by a reverse bias input signal. The SiPM input manager is configured to control a power supply (e.g., 202 / 802) to operate the SiPM. Operating the SiPM in reverse bias mode includes providing a fixed bias voltage across one or more PADs of the SiPM as a reverse bias input signal or reverse bias activation signal. A voltage having a magnitude below the reverse bias breakdown threshold is selected to reduce the sensitivity to any light incident on the SiPM within the photodetector device.

[0101] In operation 1004, an output monitor (e.g., 203 / 803) detects a response (e.g., a response signal) to operation in reverse bias mode. The response signal to the reverse bias operation signal is measured by an output monitor controlled by the SiPM output manager. This response signal is, for example, a reverse bias saturation current generated according to a fixed bias voltage. The SiPM output manager is configured to receive a measured value of the saturation current response signal from the output current monitor. The saturation current is, for example, the maximum current that is permitted to flow through the SiPM diode under a sub-breakdown reverse bias voltage in saturation mode. In an embodiment, a SiPM diode operating in saturation mode may generate a very low reverse bias saturation current. Such a low current may require special hardware and / or software to obtain accurate measurement values.

[0102] In operation 1006, a temperature determination manager (e.g., 516) determines the temperature of the SiPM according to the relationship between the saturation current and the temperature. The saturation current I S can be determined by Equation 9.

Equation

[0103] In Equation 9, A is a constant for a given SiPM, E g is the semiconductor bandgap, k B is the Boltzmann constant, and T is the temperature in degrees Kelvin. Thus, the computing system may determine the temperature T based on the measured saturation current I S and the equation constants. In some embodiments, in reverse bias saturation mode, a leakage current separated from the reverse bias saturation current may also be generated. Depending on the characteristics of the diode, the leakage current may vary in magnitude. Accurate measurement of the reverse bias saturation current may require taking into account the leakage current.

[0104] In operation 1008, after being determined or calculated based on the saturation current at which the temperature T is measured, the power supply (e.g., 202) is used by the SiPM input manager to apply an operating reverse bias voltage as an operation input signal to one or more PADs of the SiPM. The operating reverse bias voltage is a voltage greater than the breakdown voltage of the SiPM. Applying the operating reverse bias voltage prepares the SiPM to measure output photons from the sample during the assay process. Thus, the SiPM enters the operating reverse bias mode. The operating reverse bias voltage applied can be determined by the computer system according to the temperature dependence of the breakdown voltage, for example, to maintain a constant overvoltage between measurements. The operating reverse bias voltage V Bias By selecting, the computer system protocol manager can ensure that the gain G remains constant.

[0105] In a further embodiment, the operating reverse bias voltage can be selected to maintain a constant reverse bias voltage (and thus a variable overvoltage) between optical detection measurements. Thus, the protocol manager can select a predetermined operating reverse bias voltage and apply it to the SiPM. In such an embodiment, the gain G is not constant and must be determined or calculated for each measurement according to the overvoltage.

[0106] In operation 1010, the SiPM 200 is exposed to photons generated during the optical detection process. Any test process that generates photons, including the assay process, can be used. Exposing the SiPM to photons results in one or more photons hitting the PADs of the SiPM. As described above with respect to FIGS. 2 and 3, exposing the SiPM to one or more photons induces an analog output current response.

[0107] In operation 1012, the SiPM output manager measures, receives, or otherwise determines an assay response signal from the SiPM in response to incident photons. A computer system (e.g., the SiPM output manager) receives the assay response signal and determines the intensity of light (or photons) impinging on the SiPM using a known constant gain of the SiPM. Since the operating reverse bias voltage is selected to provide a constant overvoltage regardless of the SiPM temperature, the gain of the SiPM is maintained at a constant value. Thus, the intensity of light impinging on the SiPM (e.g., the number of photons) can be determined according to a constant gain. Thus, determining the light intensity (i.e., the number of incident photons) can be accomplished by dividing the measured total charge output by a predetermined constant gain G.

[0108] In a further embodiment where the operating reverse bias voltage is maintained at a predetermined constant level (resulting in a variable overvoltage), the measured temperature can be used to determine the variable overvoltage and thus the gain G according to appropriately stored data and / or appropriate equations as discussed herein. The determined gain G can then be used to determine the light intensity (i.e., the number of incident photons) by dividing the measured total charge output by the predetermined constant gain G. Measurement of the recorded temperature immediately before (or after) applying the operating reverse bias voltage enables an accurate determination of the output light intensity during measurement.

[0109] The process 1000 of obtaining temperature-corrected assay data can, in some embodiments, be executed according to operations 1002 - 1012 in the order in which they are described above. In further embodiments, process 1000 can include more or fewer operations than operations 1002 - 1012 described above, can include operations in a different order, and / or can include some operations multiple times.

[0110] For example, in some embodiments, the temperature of the SiPM may be measured after the optical detection data has been captured. In further embodiments, the temperature of the SiPM may be measured both before and after the optical detection data is captured. In such embodiments, the operating reverse bias voltage (and not the overvoltage) is maintained constant. The measurements before and after can be combined to estimate the temperature during the data capture operation. Based on the temperature at the time of measurement, the gain can be calculated. Then, using that gain, the incident light intensity can be determined.

[0111] As described above with respect to FIG. 10, various equations can be used when determining the SiPM temperature based on the measurements generated in the reverse bias voltage mode and when adjusting or considering the determined temperature. In the reverse bias voltage mode, as described above, the SiPM can function as a thermometer. The methods described with respect to the given equations are provided by way of example only. In further embodiments, the given equations can be modified as needed according to the particular components of the SiPM device being used. For example, the use of different diodes and / or different circuits within the SiPM may require modification of the selected equation. In further embodiments, as described above, a correlation and / or look-up table that provides a correlation between the operating circuit parameters and temperature can be used instead of a particular equation. In embodiments, such a correlation and / or look-up table can be used in one or both of determining the temperature based on the forward bias voltage input and considering the temperature when performing SiPM measurements under reverse bias conditions. Such a correlation and / or look-up table can be established, for example, based on the equations described above and / or on modified versions of these equations. In further embodiments, such a correlation and / or look-up table can be established experimentally.

[0112] A potential concern when using a reverse bias voltage to determine the temperature of a SiPM is optical sensitivity. Since SiPMs can be sensitive to light in reverse bias mode, ambient light hitting the SiPM during reverse bias temperature measurements can distort the results. Figure 11 shows a graph 1100 depicting several diode voltage / current response curves 1101 - 1105 when exposed to incident light levels varying between 0.00 nW / cm 2 ~10.00 nW / cm 2 . As shown in Figure 11, when exposed to incident light below 0.10 nW / cm 2 (curves 1101, 1102, and 1103), the saturation current in saturation mode 1106 is stable and relatively insensitive to various levels of incident light. At light levels of 1.00 nW / cm 2 and above (e.g., curves 1104, 1105), the saturation current shows higher sensitivity to incident light. Thus, the potential distortion due to optical sensitivity during reverse bias mode temperature measurements can be reduced or mitigated by ensuring that the potential ambient light incident on the PAD of the SiPM remains below a certain level.

[0113] The above represents embodiments applicable to temperature correction in any type of photodetection device using SiPMs. In a further specific embodiment, the foregoing embodiments regarding temperature correction in a photodetection device can be used in a sample assay device using SiPMs.

[0114] Assay devices consistent with the present disclosure include various assay devices and / or formats. The assay device can include various components (assay system components), such as assay plates, cartridges, multi-well assay plates, reaction vessels, test tubes, cuvettes, flow cells, assay chips, lateral flow devices, etc., and assay reagents (which may include target agents or other binding reagents) that are added as the assay progresses or are pre-introduced into the wells, chambers, or assay regions of the assay module. These devices can use various assay approaches to measure the presence, amount, or activity of a target analyte.

[0115] The assay device is configured to perform a sample assay on one or more test samples, each having an unknown amount of analyte, as described herein. Performing a sample assay on a test sample generates a sample assay signal value. The sample assay signal value indicates the unknown amount of the analyte associated therewith. In embodiments, multiple sample assay signal values can be obtained to correspond to the unknown analyte amount of a single test sample. That is, the test sample can be measured multiple times.

[0116] The assay methods disclosed herein can be performed manually, using automated techniques, or both. The automated techniques can be partially automated, for example, using one or more modular devices, or fully integrated automated devices.

[0117] The assay device may include a manual and / or automated system (modules and fully integrated) in which the methods of this specification can be performed, and may include one or more of the following automated subsystems: hardware (e.g., personal computer, laptop, hardware processor, disk, keyboard, display, printer), software (e.g., processes such as drivers, driver controllers, and data analysis devices), and computer subsystems that may include databases; for example, liquid processing subsystems such as sample processing and reagent processing, such as robotic pipetting heads, syringes, stirring devices, ultrasonic mixing devices, magnetic mixing devices; sample, reagent, and consumable storage and processing subsystems, such as robotic manipulators, tube or lid or foil piercing devices, lid removal devices, conveying devices such as linear and circular conveyors and robotic manipulators, tube racks, plate carriers, trough carriers, pipette tip carriers, plate shakers; centrifuges, assay reaction subsystems, such as fluid-based and consumable-based (tubes and multiwell plates, etc.); container and consumable cleaning subsystems, such as plate washers; magnetic separators or magnetic particle concentration subsystems, such as flow cell, tube, and plate types; cell and particle detection, classification, and separation subsystems, such as flow cytometers and Coulter counters; detection subsystems such as colorimetric, nephelometric, fluorescence, and ECL detectors; temperature control subsystems, such as air treatment, air cooling, air heating, fans, blowers, water baths; waste subsystems, such as liquid and solid waste containers; global unique identifier (GUI) detection subsystems, such as 1D and 2D barcode scanners of flatbed and wand types, etc.; sample identifier detection subsystems, such as 1D and 2D barcode scanners of flatbed and wand types, etc. Chromatography systems such as high performance liquid chromatography (HPLC), fast protein liquid chromatography (FPLC), mass spectrometers, etc. can also be modularized or fully integrated. The automated system consistent with the embodiments of this specification can be controlled and / or managed by a user interface manager.

[0118] A system or module that performs sample identification and preparation can be combined (or associated, adjacent, robotically connected or joined) with a system or module that performs an assay, performs detection, or both. Multiple modular systems of the same type can be combined to increase throughput. The modular system can be combined with modules that perform other types of analysis such as chemical analysis, biochemical analysis, and nucleic acid analysis. The automated system enables various workflows for batch, continuous random access, and point-of-care, and single, medium, and high sample throughput.

[0119] An automated system consistent with embodiments herein can be configured to perform one or more of the following functions: (a) moving consumables such as plates into, within, and out of a detection subsystem, (b) moving consumables between other subsystems, (c) storing consumables, (d) processing samples and reagents (e.g., adapted to mix reagents and / or introduce reagents into consumables), (e) agitating consumables (e.g., for mixing reagents and / or increasing reaction rate), (f) cleaning consumables (e.g., washing plates and / or performing assay wash steps (e.g., well aspiration)), and (g) measuring assay signals (e.g., ECL signals) in a flow cell or in consumables such as tubes or plates. The automated system can be configured to process individual tubes placed in a rack, multi-well plates such as 96- or 384-well plates.

[0120] In embodiments, the automated system is fully automated, modular, computerized, performs in vitro quantitative and qualitative tests on a wide range of analytes, and performs photometric assays, ion-selective electrode measurements, and / or electrochemiluminescence (ECL) assays. In embodiments, the automated system includes the following hardware units: a control unit, a core unit, and at least one analysis module.

[0121] In an embodiment, a control unit, which can be a local assay computing system and / or a network computing system, uses a graphical user interface to control all device functions and is composed of a reading device such as a monitor, input devices such as a keyboard and a mouse, and a personal computer using, for example, the Windows operating system. In an embodiment, the core unit is composed of several components that manage the transport of samples to each assigned analysis module. The actual configuration of the core unit depends on the configuration of the analysis module, and the analysis module can be configured by those skilled in the art using methods known in the art. In an embodiment, the core unit includes, as main components, at least a sampling unit and one rack rotor. A conveyor line and a second rack rotor are possible extensions. Some other core unit components include a sample rack loader / unloader, ports, barcode readers (for racks and samples), water supply, and a system interface port. In an embodiment, the analysis module performs an ECL assay and includes a reagent area, a measurement area, a consumable area, and a pre-washing area.

[0122] FIG. 12 shows one embodiment of an assay device 101 that is consistent with the embodiments of this specification. The method of this embodiment can be used in conjunction with various assay devices 101 and / or formats, as described above. The assay device 101 represents an example of a suitable platform for using the methods, systems, and devices disclosed herein. In an embodiment, the assay device 101 as disclosed herein includes one or more SiPM devices, such as SiPM200 or SiPM800, configured to capture optical signals from one or more samples during one or more assay steps. While a particular assay device 101 may be disclosed herein, the embodiments of this specification can be used with any suitable assay device that uses SiPMs. While a particular assay device is depicted and described, the methods and systems described herein can be used with any suitable assay device, system, or method.

[0123] In one embodiment, the assay device 101 is provided for performing a luminescence assay within a multi-well plate. For example, one embodiment of the assay device 101 includes a SiPM200 that includes a PAD201 (not shown), a power supply 202, and an output current monitor 203. The assay device can further incorporate a computer system 502. Additionally, the assay device 101 can further include a plate processing subsystem 405 that includes a light-tight container 410 that provides an environment free of light in which luminescence measurements can be performed. The light-tight container 410 may surround a plate carriage 420 that is actuated by a plate carriage actuator 450 and configured to hold a multi-well plate 400.

[0124] The plate carriage 420 is configured to perform x-y translation when actuated by a plate carriage actuator 450, which may include, for example, a stepper motor, a linear drive, and / or any other suitable electromechanical actuator. The plate carriage actuator 450 may be actuated or controlled by a computer system 502 (e.g., by a protocol manager 518) to translate the plate carriage 420 so as to suitably position the multi-well plate 400 relative to the SiPM 200 for opto-detection measurements.

[0125] The SiPM 200 is disposed to face one or more samples within a light-shielding housing 410 of the assay device 101. The one or more samples may be included, for example, within a multi-well plate 400 as shown in FIG. 12. The multi-well plate 400 is disposed on a plate carriage 420 actuated by a plate carriage actuator 450. The SiPM 200 is configured and arranged to receive light (e.g., visible light) emitted from samples within the multi-well plate 400 during the execution of an assay such as an electrochemiluminescence (ECL) assay, a fluorescence assay, and / or a chemiluminescence assay. The SiPM 200 is configured to receive a voltage input via the power supply 202 (e.g., to operate the SiPM 200 in a forward bias mode or a reverse bias mode) and generate an output signal that can be detected or monitored by an output monitor 203, as discussed above.

[0126] During the execution of the assay, the SiPM receives or is exposed to light emitted from one of the samples contained in the multi-well plate 400. To achieve high throughput, multiple samples may be continuously excited to cause photon emission. Thus, the SiPM 200 receives continuous emissions from the samples within the multi-well plate 400. The power supplied to the SiPM 200 and the conduction of high current heat the SiPM 200. As the SiPM 200 is repeatedly operated to acquire data from each of the multiple samples within the multi-well plate 400, the temperature of the SiPM 200 can increase over the course of the assay execution. Since higher intensity light sources cause larger current outputs, the temperature increase may be proportional to or otherwise related to the intensity of the light source.

[0127] The temperature increase of the SiPM 200 can be considered, calibrated, and / or otherwise compensated for according to the methods and systems described herein, such as the methods associated with FIGS. 6, 9, and 10. Each of these methods can be adapted to be performed by or in conjunction with an assay system or assay device. Various assay steps and tasks may be included within the foregoing steps of the foregoing methods so as to be appropriate for the execution of the sample assay.

[0128] For example, as discussed above, each of methods 600, 900, and 1000 may include an operation of exposing the SiPM to incident photons. In methods consistent with the assay system and device, the incident photons may be generated via assay steps such as, for example, an electrochemiluminescence (ECL) assay, a fluorescence assay, and / or a chemiluminescence assay. Thus, each of methods 600, 900, and 1000 described above may include an assay operation configured to cause the emission of photons from the assay sample. The subsequently emitted photons can be captured by the SiPM associated with the assay device / system in the detailed photon exposure step described above.

[0129] In another example, the operations of the above-described methods 600, 900, 1000 may further include an operation of determining an assay value based on a calculated, measured, and / or determined light intensity value. As discussed above, the light intensity value may be calculated, measured, and / or determined based on the SiPM response to incident photons. The light intensity value may then be used to determine an assay value, e.g., a value associated with the execution of an assay on a sample. Methods 600, 900, and 1000 may include an assay operation configured to cause photon generation based on the assay operation. The measurement of these photons via the SiPM may be used to calculate, determine, compute, and / or measure an assay value associated with the assay operation.

[0130] Methods 600, 900, and 1000 may further include any and all operations necessary for performing the assay and for measuring, calculating, determining, and aggregating assay results. Each of these operations may be controlled, facilitated, and / or managed by a computer system associated with the assay device or system and / or by a person operating the assay device or system. Such operations may include, but are not limited to, sample deposition, handling and dispensing of reagents and reactants, movement and transfer operations of plates, application of electric fields, currents, and voltages, and induction of electrochemical reactions. Examples of devices consistent with embodiments herein and operations performed by such devices can be found, for example, in U.S. Application No. PCT / US2016 / 043755, filed Jul. 22, 2016, U.S. Application No. PCT / US2017 / 014360, filed Jan. 20, 2017, and U.S. Application No. 63 / 025,344, filed May 15, 2020. Other examples are high-throughput devices such as those disclosed in U.S. Application No. PCT / US2016 / 026242, filed Apr. 6, 2016, and U.S. Application No. PCT / US2019 / 032567, filed May 16, 2019. Other examples of devices consistent with embodiments herein include, for example, U.S. Application No. PCT / US02 / 20570, filed Jun. 29, 2002, U.S. Application No. PCT / US2006 / 049049, filed Dec. 21, 2006, U.S. Application No. PCT / US2014 / 010182, filed Jan. 3, 2014, and U.S. Application No. 62 / 954,961, filed Dec. 30, 2019. SiPMs consistent with embodiments herein can be used in any assay format involving optical detection, such as assays using measurements based on absorbance, fluorescence, chemiluminescence, electrochemiluminescence, light scattering, etc. SiPMs can be used for optical detection in binding assays such as immunoassays or nucleic acid assays, chemical assays, enzyme assays, and others.For example, the methods and devices disclosed herein may be consistent with the assays and devices disclosed in, for example, U.S. Application No. PCT / US20 / 30754, filed Apr. 30, 2020, U.S. Application No. PCT / US2014 / 026010, filed Mar. 13, 2014, U.S. Application No. PCT / US2014 / 022948, filed Mar. 11, 2014, U.S. Application No. PCT / US2015 / 03092, filed May 15, 2015, and U.S. Application No. PCT / US2014 / 010016, filed Jan. 2, 2014. Each of the prior applications discussed in this paragraph is hereby incorporated by reference in its entirety. Additional embodiments consistent with the present disclosure are as follows.

[0131] Embodiment 1 is a method for obtaining temperature-corrected photometric data by a silicon photomultiplier device, the method comprising operating the silicon photomultiplier device in a forward bias mode by a forward bias mode input signal; measuring a forward bias mode response signal by at least one processor; determining the temperature of the silicon photomultiplier device according to the forward bias mode input signal and the forward bias mode response signal by at least one processor; determining an operating reverse bias mode voltage by at least one processor; operating the silicon photomultiplier device in an operating reverse bias mode by the operating reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining the intensity of the light according to the output signal and the silicon photomultiplier device gain.

[0132] Embodiment 2 includes the features of Embodiment 1 and further includes determining the operating reverse bias mode voltage according to a temperature required to maintain a predetermined silicon photomultiplier device gain of the silicon photomultiplier device.

[0133] Embodiment 3 includes the features of Embodiment 1 or 2, and further includes determining the gain of a silicon photomultiplier device according to temperature and operating reverse bias mode voltage.

[0134] Embodiment 4 includes the features of Embodiments 1 to 3, and operating the silicon photomultiplier device includes applying a constant current as a forward bias mode input signal.

[0135] Embodiment 5 includes the features of Embodiments 1 to 4, and operating the silicon photomultiplier device in the forward bias mode includes applying a constant current as a forward bias mode input signal.

[0136] Embodiment 6 includes the features of Embodiments 1 to 5, and further includes determining the temperature of the silicon photomultiplier device by using the correlation between the diode voltage and the diode current in the forward bias mode.

[0137] Embodiment 7 includes the features of Embodiments 1 to 6, and determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light and determining a second temperature after exposing the silicon photomultiplier device to light.

[0138] Embodiment 8 includes the features of Embodiments 1 to 7, the target object includes at least one sample contained within a sample well of a multi-well plate, and the method further includes activating the sample well to cause a luminescence reaction within the at least one sample to generate light.

[0139] Embodiment 9 includes the features of Embodiments 1 to 8, and the luminescence reaction includes a chemiluminescence reaction.

[0140] Embodiment 10 includes the features of Embodiments 1 to 9, and the chemiluminescence reaction includes an electrochemiluminescence reaction.

[0141] Embodiment 11 includes the features of Embodiments 1 to 10, wherein the target object includes at least one sample contained within a sample well of a multi-well plate, and the method further includes determining an assay measurement value according to the intensity of light.

[0142] Embodiment 12 includes the features of Embodiments 1 to 11, wherein the forward bias mode input signal is a first forward bias mode input signal, the forward bias mode response signal is a first forward bias mode response signal, and the method further includes operating a silicon photomultiplier device in a forward bias mode by a second forward bias mode input signal, and measuring a second forward bias mode response signal by at least one processor. Determining the temperature of the silicon photomultiplier device according to the forward bias mode input signal and the forward bias mode response signal includes determining the temperature of the silicon photomultiplier device according to the first forward bias mode input signal, the first forward bias mode response signal, the second forward bias mode input signal, and the second forward bias mode response signal.

[0143] Embodiment 13 is a method for obtaining temperature-corrected photometric data by a silicon photomultiplier device, the method comprising: operating the silicon photomultiplier device in reverse bias mode by a reverse bias input signal; measuring a reverse bias mode saturation current by at least one processor; determining the temperature of the silicon photomultiplier device according to the reverse bias mode saturation current by at least one processor; determining an operating reverse bias mode voltage by at least one processor; operating the silicon photomultiplier device in operating reverse bias mode by the operating reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining the intensity of the light according to the temperature of the silicon photomultiplier device and the silicon photomultiplier device gain.

[0144] Embodiment 14 includes the features of Embodiment 13, and further includes determining an operating reverse bias mode voltage according to temperature to maintain a predetermined silicon photomultiplier device gain of the silicon photomultiplier device.

[0145] Embodiment 15 includes the features of Embodiment 13 or 14, and further includes determining the silicon photomultiplier device gain according to temperature.

[0146] Embodiment 16 includes the features of Embodiments 13 to 15, and operating the silicon photomultiplier device includes applying a fixed bias voltage as a reverse bias input signal to operate the silicon photomultiplier device in saturation mode.

[0147] Embodiment 17 includes the features of Embodiments 13 to 16, and determining the temperature of the silicon photomultiplier device is performed by using the correlation between the temperature in reverse bias mode and the reverse bias mode saturation current.

[0148] Embodiment 18 includes the features of Embodiments 13 to 17, and determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light and determining a second temperature after exposing the silicon photomultiplier device to light.

[0149] Embodiment 19 includes the features of Embodiments 13 to 18, the target object includes at least one sample contained within a sample well of a multi-well plate, and the method further includes activating the sample well to cause a luminescence reaction within the at least one sample to generate light.

[0150] Embodiment 20 includes the features of Embodiments 13 to 19, and the luminescence reaction includes a chemiluminescence reaction.

[0151] Embodiment 21 includes the features of Embodiments 13 to 20, and the chemiluminescence reaction includes an electrochemiluminescence reaction.

[0152] Embodiment 22 includes the features of Embodiments 13 to 21, the target object includes at least one sample contained within a sample well of a multi-well plate, and the method further includes determining an assay measurement value according to the intensity of the light.

[0153] Embodiment 23 is a method for obtaining temperature-corrected photometric data by a silicon photomultiplier device, the method comprising: operating the silicon photomultiplier device in reverse bias mode by a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining the temperature of the silicon photomultiplier device according to the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; determining an operating reverse bias mode voltage by at least one processor; operating the silicon photomultiplier device in operating reverse bias mode by the operating reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining the intensity of the light according to the temperature of the silicon photomultiplier device and the silicon photomultiplier device gain.

[0154] Embodiment 24 includes the features of Embodiment 23, and further includes determining an operating reverse bias mode voltage according to temperature to maintain a predetermined silicon photomultiplier device gain of the silicon photomultiplier device.

[0155] Embodiment 25 includes the features of Embodiment 23 or 24, and further includes determining the silicon photomultiplier device gain according to temperature and the operating reverse bias mode voltage.

[0156] Embodiment 26 includes the features of Embodiments 23 to 25, and operating the silicon photomultiplier device includes applying a fixed current as the reverse bias input signal.

[0157] Embodiment 27 includes the features of Embodiments 23 to 26, and operating the silicon photomultiplier device includes applying a fixed voltage as the reverse bias input signal.

[0158] Embodiment 28 includes the features of Embodiments 23 to 27, and determining the temperature of the silicon photomultiplier device includes determining the gain of the silicon photomultiplier device when exposed to a predetermined light intensity, and determining the temperature of the silicon photomultiplier device according to the gain.

[0159] Embodiment 29 includes the features of Embodiments 23 to 28, and determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light, and determining a second temperature after exposing the silicon photomultiplier device to light.

[0160] Embodiment 30 includes the features of Embodiments 23 to 29, the target object includes at least one sample contained in a sample well of a multi-well plate, and the method further includes activating the sample well to cause a luminescence reaction in the at least one sample to generate light.

[0161] Embodiment 31 includes the features of Embodiments 23 to 30, and the luminescence reaction includes a chemiluminescence reaction.

[0162] Embodiment 32 includes the features of Embodiments 23 to 31, and the chemiluminescence reaction includes an electrochemiluminescence reaction.

[0163] Embodiment 33 includes the features of Embodiments 23 to 32, the target object includes at least one sample contained in a sample well of a multi-well plate, and the method further includes determining an assay measurement value according to the intensity of light.

[0164] Embodiment 34 is a method for determining the temperature of a silicon photomultiplier device, the method comprising: operating the silicon photomultiplier device in reverse bias mode with a reverse bias input signal; exposing the silicon photomultiplier device to a predetermined light intensity; measuring a reverse bias output signal from the silicon photomultiplier device; determining the gain of the silicon photomultiplier device when exposed to the predetermined light intensity according to the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity; and determining the temperature of the silicon photomultiplier device according to the gain.

[0165] Embodiment 35 includes the features of Embodiment 34, and operating the silicon photomultiplier device includes applying a constant current as the reverse bias input signal.

[0166] Embodiment 36 includes the features of Embodiment 34 or 35, and operating the silicon photomultiplier device includes applying a constant voltage as the reverse bias input signal.

[0167] Embodiment 37 includes the features of Embodiments 34 to 36, and further includes operating the silicon photomultiplier device in operating reverse bias mode to obtain an assay measurement value based on temperature.

[0168] Embodiment 38 is a system for obtaining temperature-corrected photometric data, the system comprising a silicon photomultiplier device including a plurality of avalanche photodiodes and at least one processor, the at least one processor operating the silicon photomultiplier device in a forward bias mode with a forward bias mode input signal, measuring a forward bias mode response signal by the at least one processor, determining the temperature of the silicon photomultiplier device according to the forward bias mode input signal and the forward bias mode response signal by the at least one processor, determining an operating reverse bias mode voltage by the at least one processor, operating the silicon photomultiplier device in an operating reverse bias mode with the operating reverse bias mode voltage, exposing the silicon photomultiplier device to light from a target object, measuring an output signal from the silicon photomultiplier device, and determining the intensity of the light according to the output signal and the silicon photomultiplier device gain, and including a system configured to have software instructions for this purpose.

[0169] Embodiment 39 includes the features of Embodiment 38, and the at least one processor is further configured to determine the operating reverse bias mode voltage according to the temperature required to maintain a predetermined silicon photomultiplier device gain of the silicon photomultiplier device.

[0170] Embodiment 40 includes the features of Embodiment 38 or 39, and the at least one processor is further configured to determine the silicon photomultiplier device gain according to the temperature.

[0171] Embodiment 41 includes the features of Embodiments 38 to 40, and operating the silicon photomultiplier device includes applying a fixed current as the forward bias mode input signal.

[0172] Embodiment 42 includes the features of Embodiments 38 to 41, and operating the silicon photomultiplier device in the forward bias mode includes applying a constant current as a forward bias mode input signal.

[0173] Embodiment 43 includes the features of Embodiments 38 to 42, and at least one processor is further configured to determine the temperature of the silicon photomultiplier device by using the correlation between the diode voltage and the diode current in the forward bias mode.

[0174] Embodiment 44 includes the features of Embodiments 38 to 43, and determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light and determining a second temperature after exposing the silicon photomultiplier device to light.

[0175] Embodiment 45 includes the features of Embodiments 38 to 44, the target object includes at least one sample contained in a sample well of a multi-well plate, and the method further includes activating the sample well to cause an electrochemiluminescence reaction in the at least one sample to generate light.

[0176] Embodiment 46 includes the features of Embodiments 38 to 45, and the luminescence reaction includes a chemiluminescence reaction.

[0177] Embodiment 47 includes the features of Embodiments 38 to 46, and the chemiluminescence reaction includes an electrochemiluminescence reaction.

[0178] Embodiment 48 includes the features of Embodiments 38 to 47, the target object includes at least one sample contained in a sample well of a multi-well plate, and the method further includes determining an assay measurement value according to the intensity of light.

[0179] Embodiment 49 is a system for acquiring temperature-corrected photometric data, the system comprising a silicon photomultiplier device including a plurality of photomultiplier diodes and at least one processor, the at least one processor operating the silicon photomultiplier device in a reverse bias mode with a reverse bias input signal, measuring a reverse bias mode saturation current by the at least one processor, determining the temperature of the silicon photomultiplier device according to the reverse bias mode saturation current by the at least one processor, determining an operating reverse bias mode voltage by the at least one processor, operating the silicon photomultiplier device in an operating reverse bias mode with the operating reverse bias mode voltage, exposing the silicon photomultiplier device to light from a target object, measuring an output signal from the silicon photomultiplier device, and determining the intensity of the light according to the temperature of the silicon photomultiplier device and the silicon photomultiplier device gain, and including a system configured to have software instructions for this purpose.

[0180] Embodiment 50 includes the features of Embodiment 49, and the at least one processor is further configured to determine an operating reverse bias mode voltage according to temperature to maintain a predetermined silicon photomultiplier device gain of the silicon photomultiplier device.

[0181] Embodiment 51 includes the features of Embodiment 49 or 50, and the at least one processor is further configured to determine the silicon photomultiplier device gain according to temperature.

[0182] Embodiment 52 includes the features of Embodiments 49 to 51, and operating the silicon photomultiplier device includes applying a fixed bias voltage as a reverse bias input signal to operate the silicon photomultiplier device in a saturation mode.

[0183] Embodiment 53 includes the features of Embodiments 49 to 52, and determining the temperature of the silicon photomultiplier device is performed by using the correlation between the temperature in the reverse bias mode and the reverse bias mode saturation current.

[0184] Embodiment 54 includes the features of Embodiments 49 to 53, and determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light and determining a second temperature after exposing the silicon photomultiplier device to light.

[0185] Embodiment 55 includes the features of Embodiments 49 to 54, the target object includes at least one sample contained in a sample well of a multi-well plate, and the method further includes activating the sample well to cause an electrochemiluminescence reaction in the at least one sample to generate light.

[0186] Embodiment 56 includes the features of Embodiments 49 to 55, and the luminescence reaction includes a chemiluminescence reaction.

[0187] Embodiment 57 includes the features of Embodiments 49 to 56, and the chemiluminescence reaction includes an electrochemiluminescence reaction.

[0188] Embodiment 58 includes the features of Embodiments 49 to 57, the target object includes at least one sample contained in a sample well of a multi-well plate, and the method further includes determining an assay measurement value according to the intensity of light.

[0189] Embodiment 59 is a system for acquiring temperature-corrected photometric data, the system comprising a silicon photomultiplier device including a plurality of photomultiplier diodes and at least one processor, the at least one processor operating the silicon photomultiplier device in reverse bias mode with a reverse bias input signal, exposing the silicon photomultiplier device to a predetermined light intensity, measuring a reverse bias output signal from the silicon photomultiplier device, determining the temperature of the silicon photomultiplier device according to the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity, determining an operating reverse bias mode voltage by the at least one processor, operating the silicon photomultiplier device in operating reverse bias mode with the operating reverse bias mode voltage, exposing the silicon photomultiplier device to light from a target object, measuring an output signal from the silicon photomultiplier device, and determining the intensity of the light according to the temperature of the silicon photomultiplier device and the silicon photomultiplier device gain, and is configured to have software instructions for this purpose.

[0190] Embodiment 60 includes the features of Embodiment 59, and the at least one processor is further configured to determine an operating reverse bias mode voltage according to temperature to maintain a predetermined silicon photomultiplier device gain of the silicon photomultiplier device.

[0191] Embodiment 61 includes the features of Embodiment 59 or 60, and the at least one processor is further configured to determine the silicon photomultiplier device gain according to temperature.

[0192] Embodiment 62 includes the features of Embodiments 59 to 61, and operating the silicon photomultiplier device includes applying a fixed current as a reverse bias input signal.

[0193] Embodiment 63 includes the features of Embodiments 59 to 62, and operating the silicon photomultiplier device includes applying a fixed voltage as a reverse bias input signal.

[0194] Embodiment 64 includes the features of Embodiments 59 to 63, and determining the temperature of the silicon photomultiplier device includes determining the gain of the silicon photomultiplier device when exposed to a predetermined light intensity, and determining the temperature of the silicon photomultiplier device according to the gain.

[0195] Embodiment 65 includes the features of Embodiments 59 to 64, and determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light, and determining a second temperature after exposing the silicon photomultiplier device to light.

[0196] Embodiment 66 includes the features of Embodiments 59 to 65, the target object includes at least one sample contained in a sample well of a multi-well plate, and the method further includes activating the sample well to cause an electrochemiluminescence reaction in at least one sample to generate light.

[0197] Embodiment 67 includes the features of Embodiments 59 to 66, and the luminescence reaction includes a chemiluminescence reaction.

[0198] Embodiment 68 includes the features of Embodiments 59 to 67, and the chemiluminescence reaction includes an electrochemiluminescence reaction.

[0199] Embodiment 69 includes the features of Embodiments 59 to 68, the target object includes at least one sample contained in a sample well of a multi-well plate, and the method further includes determining an assay measurement value according to the intensity of light.

[0200] Embodiment 70 is a system for obtaining temperature-corrected photometric data, the system comprising a silicon photomultiplier device including a plurality of avalanche photodiodes and at least one processor, the at least one processor configured to operate the silicon photomultiplier device in reverse bias mode with a reverse bias input signal, expose the silicon photomultiplier device to a predetermined light intensity, measure a reverse bias output signal from the silicon photomultiplier device, determine a gain of the silicon photomultiplier device when exposed to the predetermined light intensity according to the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity, and determine a temperature of the silicon photomultiplier device according to the gain, and including software instructions for doing so.

[0201] Embodiment 71 includes the features of Embodiment 70, and operating the silicon photomultiplier device includes applying a constant current as the reverse bias input signal.

[0202] Embodiment 72 includes the features of Embodiment 70 or 71, and operating the silicon photomultiplier device includes applying a constant voltage as the reverse bias input signal.

[0203] Embodiment 73 includes the features of Embodiments 70-72, and the at least one processor is further configured to operate the silicon photomultiplier device in operational reverse bias mode to obtain an assay measurement value based on temperature.

[0204] A non - transitory computer - readable medium configured to have software instructions that cause at least one processor to execute a method, the method comprising: operating a silicon photomultiplier device in a forward - bias mode with a forward - bias mode input signal; measuring a forward - bias mode response signal by at least one processor; determining a temperature of the silicon photomultiplier device according to the forward - bias mode input signal and the forward - bias mode response signal by at least one processor; determining an operating reverse - bias mode voltage by at least one processor; operating the silicon photomultiplier device in an operating reverse - bias mode with the operating reverse - bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light according to the output signal and the silicon photomultiplier device gain. The non - transitory computer - readable medium is included.

[0205] Embodiment 75 includes the features of Embodiment 74 and further includes determining an operating reverse - bias mode voltage according to a temperature required to maintain a predetermined silicon photomultiplier device gain of the silicon photomultiplier device.

[0206] Embodiment 76 includes the features of Embodiment 74 or 75 and further includes determining a silicon photomultiplier device gain according to temperature.

[0207] Embodiment 77 includes the features of Embodiments 74 - 76, and operating the silicon photomultiplier device includes applying a fixed current as the forward - bias mode input signal.

[0208] Embodiment 78 includes the features of Embodiments 74 to 77, and operating the silicon photomultiplier device in the forward bias mode includes applying a constant current as the forward bias mode input signal.

[0209] Embodiment 79 includes the features of Embodiments 74 to 78, and the method further includes determining the temperature of the silicon photomultiplier device by using the correlation between the diode voltage and the diode current in the forward bias mode.

[0210] Embodiment 80 includes the features of Embodiments 74 to 79, and determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light and determining a second temperature after exposing the silicon photomultiplier device to light.

[0211] Embodiment 81 includes the features of Embodiments 74 to 80, the target object includes at least one sample contained in a sample well of a multi-well plate, and the method further includes activating the sample well to cause an electrochemiluminescence reaction in the at least one sample to generate light.

[0212] Embodiment 82 includes the features of Embodiments 74 to 81, and the luminescence reaction includes a chemiluminescence reaction.

[0213] Embodiment 83 includes the features of Embodiments 74 to 82, and the chemiluminescence reaction includes an electrochemiluminescence reaction.

[0214] Embodiment 84 includes the features of Embodiments 74 to 83, the target object includes at least one sample contained in a sample well of a multi-well plate, and the method further includes determining an assay measurement value according to the intensity of the light.

[0215] A non-transitory computer-readable medium configured to have software instructions that cause at least one processor to execute a method, the method comprising: operating a silicon photomultiplier device in a reverse bias mode with a reverse bias input signal; measuring, by at least one processor, a reverse bias mode saturation current; determining, by at least one processor, a temperature of the silicon photomultiplier device according to the reverse bias mode saturation current; determining, by at least one processor, an operating reverse bias mode voltage; operating the silicon photomultiplier device in an operating reverse bias mode with the operating reverse bias mode voltage; exposing the silicon photomultiplier device to light from a target object; measuring an output signal from the silicon photomultiplier device; and determining an intensity of the light according to the temperature of the silicon photomultiplier device and a silicon photomultiplier device gain. The non-transitory computer-readable medium is included.

[0216] Embodiment 86 includes the features of Embodiment 85, and the method further includes determining an operating reverse bias mode voltage according to temperature to maintain a predetermined silicon photomultiplier device gain of the silicon photomultiplier device.

[0217] Embodiment 87 includes the features of Embodiment 85 or 86, and the method further includes determining a silicon photomultiplier device gain according to temperature.

[0218] Embodiment 88 includes the features of Embodiments 85 to 87, and operating the silicon photomultiplier device includes applying a fixed bias voltage as a reverse bias input signal to operate the silicon photomultiplier device in a saturation mode.

[0219] Embodiment 89 includes the features of Embodiments 85 to 88, and determining the temperature of the silicon photomultiplier device is performed by using the correlation between the temperature in the reverse bias mode and the reverse bias mode saturation current.

[0220] Embodiment 90 includes the features of Embodiments 85 to 89, and determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light and determining a second temperature after exposing the silicon photomultiplier device to light.

[0221] Embodiment 91 includes the features of Embodiments 85 to 90, the target object includes at least one sample contained in a sample well of a multi-well plate, and the method further includes activating the sample well to cause an electrochemiluminescence reaction in the at least one sample to generate light.

[0222] Embodiment 92 includes the features of Embodiments 85 to 91, and the luminescence reaction includes a chemiluminescence reaction.

[0223] Embodiment 93 includes the features of Embodiments 85 to 92, and the chemiluminescence reaction includes an electrochemiluminescence reaction.

[0224] Embodiment 94 includes the features of Embodiments 85 to 93, the target object includes at least one sample contained in a sample well of a multi-well plate, and the method further includes determining an assay measurement value according to the intensity of light.

[0225] Embodiment 95 is a non - transitory computer - readable medium configured to have software instructions for causing the execution of a method by at least one processor, the method comprising a silicon photomultiplier device including a plurality of photomultiplier diodes, and at least one processor, wherein the at least one processor operates the silicon photomultiplier device in a reverse - bias mode with a reverse - bias input signal, exposes the silicon photomultiplier device to a predetermined light intensity, measures a reverse - bias output signal from the silicon photomultiplier device, determines the temperature of the silicon photomultiplier device according to the reverse - bias input signal, the reverse - bias output signal, and the predetermined light intensity, determines an operating reverse - bias mode voltage by the at least one processor, operates the silicon photomultiplier device in the operating reverse - bias mode with the operating reverse - bias mode voltage, exposes the silicon photomultiplier device to light from a target object, measures an output signal from the silicon photomultiplier device, and determines the intensity of the light according to the temperature of the silicon photomultiplier device and the silicon photomultiplier device gain, and includes a non - transitory computer - readable medium configured to have software instructions for the above - mentioned purpose.

[0226] Embodiment 96 includes the features of Embodiment 95, and the method further includes determining the operating reverse - bias mode voltage according to the temperature to maintain a predetermined silicon photomultiplier device gain of the silicon photomultiplier device.

[0227] Embodiment 97 includes the features of Embodiment 95 or 96, and the method further includes determining the silicon photomultiplier device gain according to the temperature and the operating reverse - bias mode voltage.

[0228] Embodiment 98 includes the features of Embodiments 95 - 97, and operating the silicon photomultiplier device includes applying a fixed current as the reverse - bias input signal.

[0229] Embodiment 99 includes the features of Embodiments 95 to 98, and operating the silicon photomultiplier device includes applying a fixed voltage as a reverse bias input signal.

[0230] Embodiment 100 includes the features of Embodiments 95 to 99, and determining the temperature of the silicon photomultiplier device includes determining the gain of the silicon photomultiplier device when exposed to a predetermined light intensity, and determining the temperature of the silicon photomultiplier device according to the gain.

[0231] Embodiment 101 includes the features of Embodiments 95 to 100, and determining the temperature includes determining a first temperature before exposing the silicon photomultiplier device to light, and determining a second temperature after exposing the silicon photomultiplier device to light.

[0232] Embodiment 102 includes the features of Embodiments 95 to 101, the target object includes at least one sample contained in a sample well of a multi-well plate, and the method further includes activating the sample well to cause an electrochemiluminescence reaction in at least one sample to generate light.

[0233] Embodiment 103 includes the features of Embodiments 95 to 102, and the luminescence reaction includes a chemiluminescence reaction.

[0234] Embodiment 104 includes the features of Embodiments 95 to 103, and the chemiluminescence reaction includes an electrochemiluminescence reaction.

[0235] Embodiment 105 includes the features of Embodiments 95 to 103, the target object includes at least one sample contained in a sample well of a multi-well plate, and the method further includes determining an assay measurement value according to the intensity of light.

[0236] Embodiment 106 is a non - transitory computer - readable medium configured to have software instructions for causing at least one processor to execute a method, the method comprising a silicon photomultiplier device including a plurality of photomultiplier diodes, and at least one processor, the at least one processor operating the silicon photomultiplier device in a reverse - bias mode with a reverse - bias input signal, exposing the silicon photomultiplier device to a predetermined light intensity, measuring a reverse - bias output signal from the silicon photomultiplier device, determining a gain of the silicon photomultiplier device when exposed to the predetermined light intensity according to the reverse - bias input signal, the reverse - bias output signal, and the predetermined light intensity, and determining a temperature of the silicon photomultiplier device according to the gain, and including a non - transitory computer - readable medium configured to have software instructions for the above - mentioned purpose.

[0237] Embodiment 107 includes the features of Embodiment 106, and operating the silicon photomultiplier device includes applying a fixed current as the reverse - bias input signal.

[0238] Embodiment 108 includes the features of Embodiment 106 or 107, and operating the silicon photomultiplier device includes applying a fixed voltage as the reverse - bias input signal.

[0239] Embodiment 109 includes the features of Embodiments 106 - 108, and further includes operating the silicon photomultiplier device in an operational reverse - bias mode to obtain an assay measurement value based on the temperature.

[0240] It will be readily apparent to those skilled in the art that other suitable modifications and adaptations to the methods and applications described herein can be made without departing from the scope of any of the embodiments. While specific embodiments have been shown and described herein, it should be understood that the claims are not to be limited to the particular forms or arrangements of components that are described and shown. Although exemplary embodiments are disclosed herein and specific terms are used, they are used only in a general and descriptive sense and not for purposes of limitation. Modifications and variations of the embodiments are possible in light of the above teachings. Accordingly, it should be understood that the embodiments can be practiced otherwise than as specifically described. All publications, patents, and patent applications mentioned in this specification are incorporated herein by reference as if each individual publication, patent, or patent application was specifically and individually indicated to be incorporated by reference.

Claims

1. A system for acquiring temperature-corrected photometric data, wherein the system Silicon photomultiplier devices and A system comprising at least one processor, wherein the at least one processor is The forward bias mode input signal causes the silicon photomultiplier device to operate in forward bias mode. The forward bias mode response signal is measured by the at least one processor. The temperature of the silicon photomultiplier device is determined by at least one of the processors according to the forward bias mode input signal and the forward bias mode response signal. The above-mentioned at least one processor determines the operating reverse bias mode voltage, The aforementioned reverse bias mode voltage causes the silicon photomultiplier device to operate in reverse bias mode. The silicon photomultiplier device is exposed to light from the target object, The output signal from the silicon photomultiplier device is measured, A system configured to have software instructions for determining the intensity of light according to the output signal and the gain of a silicon photomultiplier device.

2. The system according to claim 1, wherein the at least one processor is further configured to determine the operating reverse bias mode voltage according to the temperature required to maintain a predetermined silicon photomultiplier device gain of the silicon photomultiplier device.

3. The system according to claim 1, wherein the at least one processor is further configured to determine the silicon photomultiplier device gain according to the temperature and the operating reverse bias mode voltage.

4. The system according to claim 1, wherein operating the silicon photomultiplier device includes applying a fixed current as the forward bias mode input signal.

5. The system according to claim 1, wherein operating the silicon photomultiplier device in the forward bias mode includes applying a fixed current as the forward bias mode input signal.

6. The system according to claim 1, wherein the at least one processor is further configured to determine the temperature of the silicon photomultiplier device by using the correlation between the diode voltage and the diode current in the forward bias mode.

7. The system according to claim 1, wherein determining the temperature includes determining a first temperature before the silicon photomultiplier device is exposed to the light, and determining a second temperature after the silicon photomultiplier device is exposed to the light.

8. The target object includes at least one sample contained in a sample well of a multiwell plate, and the at least one processor is The system according to claim 1, further configured to activate the sample well to induce a luminescence reaction in the at least one sample to generate the light.

9. The system according to claim 8, wherein the light emission reaction includes a chemiluminescent reaction.

10. The system according to claim 9, wherein the chemiluminescent reaction includes an electrochemiluminescent reaction.

11. The target object includes at least one sample contained in a sample well of a multiwell plate, and the at least one processor is The system according to claim 1, further configured to determine assay measurements according to the intensity of the light.

12. A system for acquiring temperature-corrected photometric data, wherein the system Silicon photomultiplier devices and A system comprising at least one processor, wherein the at least one processor is The silicon photomultiplier device is operated in reverse bias mode by the reverse bias input signal. At least one processor measures the reverse bias mode saturation current, The temperature of the silicon photomultiplier device is determined by at least one of the processors according to the reverse bias mode saturation current. The above-mentioned at least one processor determines the operating reverse bias mode voltage, The aforementioned reverse bias mode voltage causes the silicon photomultiplier device to operate in reverse bias mode. The silicon photomultiplier device is exposed to light from the target object, The output signal from the silicon photomultiplier device is measured, A system configured to have software instructions for determining the intensity of light according to the temperature of the silicon photomultiplier device and the gain of the silicon photomultiplier device.

13. A system for acquiring temperature-corrected photometric data, wherein the system Silicon photomultiplier devices and A system comprising at least one processor, wherein the at least one processor is The silicon photomultiplier device is operated in reverse bias mode by the reverse bias input signal. The silicon photomultiplier device is exposed to a predetermined light intensity, The reverse bias output signal from the silicon photomultiplier device is measured. The temperature of the silicon photomultiplier device is determined according to the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity. The above-mentioned at least one processor determines the operating reverse bias mode voltage, The aforementioned reverse bias mode voltage causes the silicon photomultiplier device to operate in reverse bias mode. The silicon photomultiplier device is exposed to light from the target object, The output signal from the silicon photomultiplier device is measured, A system configured to have software instructions for determining the intensity of light according to the temperature of the silicon photomultiplier device and the gain of the silicon photomultiplier device.

14. A system for acquiring temperature-corrected photometric data, wherein the system Silicon photomultiplier devices and A system comprising at least one processor, wherein the at least one processor is The silicon photomultiplier device is operated in reverse bias mode by the reverse bias input signal. The silicon photomultiplier device is exposed to a predetermined light intensity, The reverse bias output signal from the silicon photomultiplier device is measured. The gain of the silicon photomultiplier device when exposed to the predetermined light intensity is determined according to the reverse bias input signal, the reverse bias output signal, and the predetermined light intensity. A system configured to have software instructions for determining the temperature of the silicon photomultiplier device according to the gain.

15. The system according to claim 1, wherein the silicon photomultiplier device includes multiple photoavalanche diodes.

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