Electron beam apparatus for surface treatment

Abstract

The present disclosure relates to an electron beam device (100), the device comprising a processing chamber (130) having a longitudinal direction (Z), and at least one electron beam source (110), each beam source being adapted to emit an electron beam in a beam plane (PF) that is substantially transverse to the longitudinal direction so as to induce a plasma or evaporation point in the processing chamber for the treatment of the surface of a component (106), and at least one first port (122) for passage of the electron beam into the processing chamber, the diameter of the smallest circle in which the first port is inscribed being 1 / 8 or less, for example 1 / 10 or less, of the smallest dimension (D3) of the cross-section of the processing chamber taken in the beam plane.

Description

Technical Field

[0001] The present disclosure generally relates to an electron beam apparatus for surface treatment, for example, thin film deposition on a surface, cleaning, densification of a layer, and / or etching of a surface. Prior art

[0002] The treatment of a surface, such as a substrate surface, or more generally the surface of a component, generally corresponds to mechanical, chemical, electrochemical, and / or physical operations, thereby resulting in a modification of the appearance or function of the surface in order to adapt it to given usage conditions. Thus, in the following disclosure, etching techniques are included in surface treatment.

[0003] Surface treatment includes techniques for coating a surface, such as metal coating techniques, and in particular thin film deposition techniques on a surface.

[0004] There are different techniques, in particular physical vapor deposition (PVD) techniques, for performing thin film deposition on a surface, such as a substrate surface.

[0005] Among these techniques, electron beam physical vapor deposition (EBPVD) is a physical vapor deposition technique in which a target under high vacuum is bombarded by an electron beam generally emitted by a tungsten filament. The electron beam converts atoms or molecules from the target into the gas phase. Then, at least a part of these atoms or molecules precipitate in solid form on the surface to be treated, covering the surface with a thin layer of these precipitated atoms or molecules. One drawback of this technique is the degradation of the filament, which can result in, for example, a non-uniform evaporation rate. Furthermore, there is the constraint of having a high vacuum, which can be less than 10 -4 mbar.

[0006] Sputtering technology involves directing a plasma containing relatively heavy charged particles, such as argon ions (Ar+) derived from at least partially ionized argon gas (Ar), towards a target, causing sputtering of particles of one or more materials forming the target. At least some of these sputtered particles are deposited on a surface, such as the surface of a substrate, forming a thin layer of material(s) on the surface. The plasma can be formed, for example, by applying electromagnetic radiation to a gas ionized at low pressure. One limitation of this technology is to avoid contamination between the plasma source and the particle sputtering region on the surface, and another limitation is to manage a relatively high vacuum, for example, 10 -2 mbar or less.

[0007] Furthermore, these different technologies, as well as other technologies not described but known to those skilled in the art, are generally not versatile, i.e., they are implemented by dedicated devices that cannot be carried over from one technology to another.

Summary of the Invention

[0008] There is a need for a surface treatment - adapted device that can not only implement different technologies (general - purpose surface treatment devices), such as different thin - film deposition technologies, but also clean the surface, densify the surface layer, and / or etch from the surface.

[0009] In particular, an electron - beam device for surface treatment that can form an electron beam without a filament is desired.

[0010] One embodiment overcomes all or some of the drawbacks of known surface treatment devices, and in particular, known thin - film deposition devices.

[0011] One embodiment is a processing chamber having a longitudinal direction, and At least one electron beam source, each beam source being adapted to emit an electron beam in a beam plane that is substantially transverse to the longitudinal direction so as to induce a plasma or evaporation point in a processing chamber for the treatment of the surface of a component, at least one electron beam source At least one first port for the passage of an electron beam into the processing chamber, the diameter of the smallest circle inscribed by the first port being 1 / 8 or less, for example 1 / 10 or less, of the smallest dimension of the cross-section of the processing chamber taken in the beam plane, at least one first port Provided is an electron beam apparatus comprising.

[0012] According to one embodiment, the processing chamber comprises a target.

[0013] According to one embodiment, the processing chamber comprises a first support base adapted to support a target.

[0014] According to one embodiment, the first support base is movable.

[0015] According to one embodiment, the first support base comprises a crucible, for example a cooled crucible, or consists of a crucible, for example a cooled crucible.

[0016] According to one embodiment, the processing chamber comprises a second support base adapted to support the component to be processed.

[0017] According to one embodiment, the second support base is movable.

[0018] According to one embodiment, at least one electron beam source is outside the processing chamber.

[0019] According to one embodiment, the apparatus comprises a deflection device, such as an electromagnet or a permanent magnet, adapted to deflect an electron beam in the processing chamber.

[0020] According to one embodiment, the deflection device is movable.

[0021] According to one embodiment, the apparatus includes an exhaust chamber connected to a first vacuum pump and a processing chamber, and the exhaust chamber is adapted to perform differential vacuum evacuation of the processing chamber.

[0022] According to one embodiment, the processing chamber is defined by wall portions forming a cylindrical or parallelepiped body, and the exhaust chamber is disposed inside or outside the body and relative to the side wall of the body.

[0023] According to one embodiment, the exhaust chamber is coaxial with the processing chamber.

[0024] According to one embodiment, at least one first port is between the exhaust chamber and the processing chamber, and the apparatus includes at least one second port for passage of an electron beam between the exhaust chamber and at least one electron beam source.

[0025] According to one embodiment, the diameter of the smallest circle inscribed by at least one second port is 1 / 8 or less, for example 1 / 10 or less, of the smallest dimension of the cross section of the processing chamber taken in the beam plane.

[0026] According to one embodiment, at least one electron beam source includes an electron generation chamber and a tube between the electron generation chamber and the processing chamber.

[0027] According to one embodiment, the tube is connected to the electron generation chamber and the exhaust chamber, and at least one second port is between the exhaust chamber and the tube.

[0028] According to one embodiment, at least one electron beam source includes a focusing device, such as an electromagnet, adapted to focus the electron beam and, for example, adapted to direct the electron beam toward the processing chamber.

[0029] According to one embodiment, the apparatus includes a second vacuum pump connected to the processing chamber and / or a third vacuum pump connected to at least one electron beam source.

[0030] According to one embodiment, the apparatus includes a plurality of electron beam sources outside the processing chamber.

[0031] According to a particular embodiment, at least two of the electron beam sources are adapted to emit electrons along two mutually parallel beam planes.

[0032] According to one embodiment, at least one first port and optionally at least one second port correspond to ports of the diaphragm.

[0033] According to one embodiment, the apparatus includes a bias source for setting the voltage of the target in the range of 0 to 10 kV, preferably 2 to 5 kV, and components for cooling the target.

[0034] One embodiment includes a processing chamber having a longitudinal direction, at least one electron beam source, each beam source being adapted to emit an electron beam in a beam plane that is substantially transverse to the longitudinal direction so as to induce a plasma or evaporation point in the processing chamber for the treatment of the surface of the component, the at least one electron beam source being outside the processing chamber, an evacuation chamber connected to the first vacuum pump, the processing chamber, and the at least one electron beam source, the evacuation chamber being disposed between the processing chamber and the at least one electron beam source and being adapted to perform differential vacuum evacuation of the processing chamber, at least one first port for passage of the electron beam between the processing chamber and the evacuation chamber, and at least one second port for passage of the electron beam between the evacuation chamber and the at least one electron beam source​ Provided is an electron beam device including

[0035] According to one embodiment, the diameter of the smallest circle in which at least one first port is inscribed is 1 / 8 or less, for example 1 / 10 or less, of the minimum dimension of the cross-section of the processing chamber taken in the beam plane, and / or the diameter of the smallest circle in which at least one second port is inscribed is 1 / 8 or less, for example 1 / 10 or less, of the minimum dimension of the cross-section of the processing chamber taken in the beam plane.

[0036] According to one embodiment, at least one first port is arranged on the side wall of the processing chamber such that an electron beam emitted by at least one electron beam source can enter the processing chamber through the at least one first port.

[0037] According to one embodiment, at least one second port is arranged on the side wall of the exhaust chamber such that an electron beam emitted by at least one electron beam source can enter the exhaust chamber through the at least one second port.

[0038] According to one embodiment, at least one electron beam source, the processing chamber, and the exhaust chamber form a closed assembly.

[0039] According to one embodiment, the processing chamber includes a target adapted to emit particles towards a component so as to induce a thin film deposition process on the component by a sputtering technique or an electron beam evaporation technique under the influence of an electron beam or plasma.

[0040] According to one embodiment, the processing chamber includes a first support base adapted to support the target and, for example, movable.

[0041] According to one embodiment, the first support base comprises a crucible, for example a cooled crucible, or consists of a crucible, for example a cooled crucible.

[0042] According to one embodiment, the apparatus comprises a bias source for setting the voltage of the target in the range of 0 to 10 kV, preferably 2 to 5 kV, and / or components for cooling the target further.

[0043] According to one embodiment, the processing chamber comprises a second support base adapted to support the parts to be processed, for example movable.

[0044] According to one embodiment, the apparatus comprises a deflection device such as an electromagnet or a permanent magnet adapted to deflect an electron beam in the processing chamber, for example movable.

[0045] According to one embodiment, the processing chamber is defined by the wall of a cylindrical or parallelepiped body, and the exhaust chamber is arranged inside or outside the body and with respect to the side wall of the body, and the exhaust chamber is coaxial with the processing chamber, for example.

[0046] According to one embodiment, at least one electron beam source comprises an electron generation chamber and a tube between the electron generation chamber and the processing chamber, each tube being connected to the exhaust chamber, and at least one second port being between the exhaust chamber and the tube of the at least one electron beam source.

[0047] According to one embodiment, at least one electron beam source comprises a focusing device such as an electromagnet adapted to focus the electron beam and, for example, adapted to direct the electron beam towards the processing chamber.

[0048] According to one embodiment, the apparatus comprises a second vacuum pump connected to the processing chamber and / or a third vacuum pump connected to at least one electron beam source.

[0049] According to one embodiment, the apparatus comprises a plurality of electron beam sources external to the processing chamber.

[0050] According to one embodiment, at least two of the electron beam sources are adapted to emit electrons along the same beam plane or along two mutually parallel beam planes.

[0051] According to one embodiment, at least one first port and / or at least one second port corresponds to a port of the diaphragm.

[0052] According to one embodiment, the apparatus is adapted to perform thin film deposition by sputtering, thin film deposition by electron beam evaporation, cleaning using plasma, densification of a layer using plasma, and / or plasma etching is adapted to perform.

Brief Description of the Drawings

[0053] The foregoing features and advantages and others will be described in detail in the following disclosure of specific embodiments shown by way of example, but are not limited to reference to the accompanying drawings.

[0054]

Figure 1

Figure 2

Figure 3

Figure 4

Modes for Carrying Out the Invention

[0055] Like features are indicated by like reference numerals in the various figures. In particular, structural and / or functional features common among the various embodiments may have the same reference numeral and may indicate identical structural, dimensional, and material characteristics.

[0056] For clarity, only the steps and components useful for understanding the embodiments described herein have been illustrated and described in detail. In particular, the current or voltage supply system, the gas supply system, and the system for applying bias to the target and / or the surface to be processed as much as possible have not been described in detail, and the described embodiments are compatible with conventional systems unless otherwise specified. Similarly, the power supply voltage, or the strength and level of the bias voltage have not been described in detail.

[0057] Unless otherwise indicated, when referring to two components connected to each other, this means a direct connection without intermediate elements other than conductors, and when referring to two components coupled together, this indicates that these two components may be connected or may be coupled through one or more other elements.

[0058] In the following description, when referring to absolute position qualifiers such as "front", "rear", "top", "bottom", "left", "right", relative position qualifiers such as "above", "below", "higher", "lower", or direction qualifiers such as "horizontal", "vertical", etc., unless otherwise specified, it refers to the orientation shown in the drawings or the orientation of the electron beam device in the normal use position.

[0059] In the following description, when referring to the electron beam plane or beam plane, it refers to the emission plane of one or more electron beams from one or more electron beam sources. If there are multiple electron beam sources, they may be configured to emit electron beams along one and the same beam plane or along multiple beam planes that are substantially parallel to each other. When referring to the longitudinal direction, it refers to the direction perpendicular to the beam plane(s). The cross-section of the processing chamber corresponds to a cross-sectional view of the processing chamber along a plane (cross-section) perpendicular to the longitudinal direction. When the cross-section corresponds to the beam plane, it describes the cross-section taken in the beam plane.

[0060] Unless otherwise specified, the expressions “about,” “approximately,” “substantially,” and “on the order of” mean within plus or minus 10%, preferably within plus or minus 5%.

[0061] FIG. 1 is a schematic cross-sectional view of an electron beam apparatus 100 according to a first embodiment.

[0062] The apparatus 100 includes three separate chambers: an electron generation chamber 112 having a first volume V1, an evacuation chamber 120 having a second volume V2, and a processing chamber 130 having a third volume V3.

[0063] The electron generation chamber 112 forms an electron beam source 110, i.e., a part of the electron source, adapted to emit at least one electron beam F in the direction of the beam plane PF.

[0064] The electron beam source 110, the processing chamber 130, and the evacuation chamber 120 form a closed, preferably sealed assembly.

[0065] The evacuation chamber 120 is connected to the processing chamber 130 and the electron beam source 110 and is disposed between the processing chamber 130 and the electron beam source 110. For example, one common wall separates the evacuation chamber 120 from the processing chamber 130, and another common wall separates the evacuation chamber 120 from the electron beam source 110.

[0066] The electron beam source 110 preferably does not include a filament. The electron beam source 110 may include, or consist of, a plasma source in which plasma is obtained by the interaction between high-frequency electromagnetic radiation and a low-pressure gas, such as the plasma source described in Patent Application No. FR3062770A1. Thereby, the plasma source that generates electrons and thus forms the electron source can be arranged in a vacuum different from the processing chamber, providing freedom in the selection of the gas pressure and / or properties for both the processing chamber and the plasma source.

[0067] In the embodiment of FIG. 1, the processing chamber 130 is arranged between the cylinder 10 (cylindrical body) and the exhaust chamber 120.

[0068] The processing chamber 130 is closed by a bottom wall 131 corresponding to the central portion of the lower base of the cylinder 10, an upper wall 133 corresponding to the upper base of the cylinder 10, and a side wall 132. The side wall 132 has a first portion common with the upper part of the side wall of the cylinder 10 connecting the lower and upper bases of the cylinder, a second portion common with the upper wall 128 of the exhaust chamber 120, and a third portion common with the first side wall 121 (inner wall) of the exhaust chamber 120.

[0069] In this embodiment, the exhaust chamber 120 is arranged inside the cylinder 10 and has a ring shape coaxial with the cylinder.

[0070] The exhaust chamber 120 is closed by a second side wall 123 (outer wall) common with the lower part of the side wall of the cylinder 10, an inner wall 121, an upper wall 128, and a bottom wall 129. The upper wall and the bottom wall of the exhaust chamber connect the inner wall and the outer wall of the exhaust chamber. The inner wall 121 and the upper wall 128 of the exhaust chamber 120 are common with the side wall 132 of the processing chamber 130. The bottom wall 129 of the exhaust chamber 120 corresponds to the peripheral portion of the lower base of the cylinder 10.

[0071] Accordingly, the processing chamber 130 is defined by a space disposed between the cylinder 10 and the exhaust chamber 120. That is, the volume V3 of the processing chamber 130 substantially corresponds to the value obtained by subtracting the volume V2 of the exhaust chamber 120 from the volume of the cylinder 10.

[0072] The upper wall 128 of the exhaust chamber 120 is shown obliquely with respect to the beam plane PF. As a modification, the upper wall 128 of the exhaust chamber 120 may be substantially parallel to the beam plane PF. According to another modification, the upper wall 128 of the exhaust chamber 120 may correspond to a part of the upper base of the cylinder 10, that is, the inner wall 121 of the exhaust chamber 120 may extend up to the upper base of the cylinder 10.

[0073] As can be seen from the top view of FIG. 3 described later, the cylinder 10 is shown to be a straight cylindrical shape. The longitudinal direction Z (i.e., the axial direction) of the processing chamber 130 corresponds to the axis of the cylindrical cylinder 10 in this mode. D3 represents the minimum cross-sectional diameter (minor diameter) of the portion surrounded by the exhaust chamber of the processing chamber 130, and D4 represents the cross-sectional diameter (major diameter) of the portion not surrounded by the exhaust chamber of the processing chamber 130. D3 is less than D4.

[0074] Other shapes and configurations of the processing chamber and the exhaust chamber are possible. For example, the main body may be non-circular cylindrical, or for example, may be a parallelepiped as shown in FIG. 4 described later, or may have any other suitable shape. The exhaust chamber may be disposed inside or outside the cylindrical or parallelepiped main body. For example, the exhaust chamber may be disposed outside the main body with respect to the side wall of the main body, thereby corresponding to the side wall of the processing chamber.

[0075] The exhaust chamber 120 is connected to the first vacuum pump 126. By using an exhaust chamber independent of the processing chamber, differential exhaust is enabled.

[0076] Furthermore, since the exhaust chamber 120 is disposed between the processing chamber 130 and the electron beam source 110, an intermediate exhaust chamber 120 is formed between the electron generation chamber 112 and the processing chamber 130. For example, the exhaust chamber 120 has an intermediate pressure P2 between the pressure P1 in the electron generation chamber 112 and the pressure P3 in the processing chamber 130. This makes it possible to differentially set the pressure in the electron generation chamber 112 for electron generation and, as will be described later, the pressure in the processing chamber 130 for substrate 106 processing, and thus optimize the operating pressures in the electron generation chamber 112 and the processing chamber 130.

[0077] The processing chamber 130 includes a processing gas inlet 138 connected to a processing gas supply unit (not shown). Examples of the processing gas include noble gases such as He, Ne, Ar, Kr, or Xe, or reactive gases such as O 2 、N 2 、F 2 、CH 4 、SF 6 and the like.

[0078] For example, a second vacuum pump 142 may be connected to the processing chamber 130 to control the achievable vacuum level in the processing chamber, particularly in the evaporation mode. Deposition of thin layers by vapor deposition may actually require a very high vacuum (typically less than 10 -5 mbar), and may require enhanced evacuation dedicated to the processing chamber.

[0079] The processing chamber 130 is adapted to support the target 104, for example, using a first support base 134 assembled within the processing chamber. The first support base 134 can be movable along the longitudinal direction Z, for example, using a first motor 135. This can enable changing the first longitudinal distance Z1 between the target 104 and the beam plane PF. More generally, the target can be capable of translational movement and / or rotational movement, for example, to control the position and shape of the wear zone of the target. Although a single target is shown, the processing chamber can include multiple targets, such as a plurality of targets on the first support base.

[0080] The target 104 can be disposed within a crucible that forms or constitutes a part of the first support base 134, especially when used in vapor deposition techniques.

[0081] The processing chamber 130 is adapted to support components such as a substrate 106 having at least one surface to be processed. To support the substrate 106, a second support base 136 can be assembled within the processing chamber. The second support base 136 can be movable in the longitudinal direction Z, for example, using a second motor 137. This can enable changing the second longitudinal distance Z2 between the substrate 106 and the beam plane PF. More generally, the component to be processed can be capable of translational movement and / or rotational movement.

[0082] The evacuation chamber 120 communicates with the processing chamber 130 using a first port 122 and with the electron beam source 110 using a second port 124. The first and second ports are preferably aligned in the direction of electron beam emission (direction X in FIG. 1). Thereby, the electron beam emitted in the direction X by the electron beam source 110 enters the processing chamber 130 through the evacuation chamber 120 and through the first and second ports 122, 124.

[0083] When there are a plurality of electron beam emission directions in the beam plane PF, preferably a plurality of first and second ports are provided so that each electron beam emitted in a given emission direction can enter the processing chamber through the first and second ports aligned in the emission direction via the evacuation chamber. Each first port is preferably aligned along one of the second port and the emission direction.

[0084] The first port 122 can be arranged on the inner wall 121 of the evacuation chamber 120, that is, on the side wall 132 of the processing chamber 130, and the second port 124 can be arranged on the outer wall 123 of the evacuation chamber 120. The inner wall and the outer wall of the evacuation chamber face each other in the emission direction X of the electron beam.

[0085] As will be described later in connection with FIG. 2, particularly when there are a plurality of electron beam sources, a plurality of first and second ports may exist.

[0086] When there are a plurality of first and second ports, the first port can be arranged along the first circumference of the inner wall 121 of the evacuation chamber 120 corresponding to the first circumference of the side wall 132 of the processing chamber 130, and the second port can be arranged along the second circumference of the outer wall 123 of the evacuation chamber 120. For example, the first and second circumferences are concentric.

[0087] More generally, for example, in a modified example where the evacuation chamber is outside a cylindrical or parallelepiped body, each first port can be arranged on a wall common to the processing chamber and the evacuation chamber, and each second port can be arranged on another wall common to the evacuation chamber and the electron beam source.

[0088] As a modification, each first port may be a port of a first diaphragm assembled to the inner wall of the exhaust chamber, i.e., the side wall of the processing chamber, and / or each second port may be a port of a second diaphragm assembled to the outer wall of the exhaust chamber. The inner wall may have an opening larger than the first port in order to integrate the first diaphragm, and / or the outer wall may have an opening larger than the second port in order to integrate the second diaphragm. This modification particularly enables providing a port size that can be changed according to the intended application, for example, to adjust the fluid conductance of the port.

[0089] The circle with the minimum diameter in which each first port 122 is inscribed is adapted to the dimensions of the processing chamber 130, preferably the dimensions of the cross-section of the processing chamber taken in the beam plane. Similar conditions may be applied to the circle with the minimum diameter in which the second port 124 is inscribed.

[0090] The port may have a circular shape. In this case, the diameter of the circle is regarded as the dimension of the port.

[0091] Preferably, the diameter of the smallest circle in which the first port 122 is inscribed is 1 / 8 or less, for example 1 / 10 or less, for example 1 / 12 or less of the minimum dimension of the cross-section of the processing chamber 130 taken in the beam plane PF. In the illustrated example, this corresponds to the small diameter D3 of the processing chamber 130. Similar conditions may be applied to the diameter of the smallest circle in which the second port 124 is inscribed.

[0092] Such a port ratio enables providing a differential vacuum between the electron beam source 110, particularly the electron generation chamber 112 and the processing chamber 130, while minimizing the contamination of the processing chamber in the direction of the electron generation chamber 112. A harmony can be found between the amount of electrons injected into a beam of a given diameter after focusing and the maximum dimension of the port that itself controls the differential pumping.

[0093] The first vacuum pump 126 enables evacuating the exhaust chamber 120 and the processing chamber 130 through the first port 122 to a vacuum.

[0094] Thus, the first vacuum pump 126, the injection of the processing gas, and optionally the second vacuum pump 142, enable the pressure within the processing chamber 130 to be controlled.

[0095] The pressure within the processing chamber 130 can be adapted according to the processing techniques implemented within the apparatus, for example, for deposition by sputtering between 10 -3 mbar and 10 -1 mbar, for deposition by electron beam evaporation between 10 -6 mbar and 10 -1 mbar. It can be adapted.

[0096] In the embodiment shown in FIG. 1, the electron generation chamber 112 is remote from the exhaust chamber 120 and the processing chamber 130. The electron beam source 110 comprises a tube 114, preferably hollow, connecting the electron generation chamber 112 and the exhaust chamber 120. The second port 124 is then disposed between the exhaust chamber 120 and the tube 114. The third flow path port 113 is formed between the electron generation chamber 112 and the tube 114. The third port 113 is preferably aligned with the first and second ports 122, 124 in the emission direction X of the electron beam.

[0097] As a variant, the electron generation chamber 112 can be attached to the exhaust chamber 120 and / or the processing chamber 130. For example, the electron generation chamber 112 may not comprise a tube.

[0098] The electron beam chamber 112 further comprises a source gas inlet 118 connected to a source gas supply (not shown). Examples of source gases include noble gases such as He, Ne, Ar, Kr or Xe, or reactive gases such as O 2 2, N 2 2, F 2 2, CH 4 4, SF 6 6, etc.

[0099] The electron beam source 110 preferably also comprises an electron beam focusing device. It can be an electrostatic or magnetic focusing device, for example an electromagnet 116 arranged around the tube 114 and connected to a coil power supply (not shown). The focusing device, such as the electromagnet 116, is preferably adapted to generate a magnetic field parallel to the path of the electron beam in the tube 114 and can be adapted to conduct the electron beam to the processing chamber 130.

[0100] Although not shown, the electron beam source 110 can comprise an extraction grid and / or an acceleration grid, for example, between the electron generation chamber 112 and the electromagnet 116.

[0101] The first vacuum pump 126 can be adapted to form a vacuum in the electron generation chamber 112 via the exhaust chamber 120 and the second port 124. The first vacuum pump 126 and the second port 124 can be dimensioned according to the desired vacuum.

[0102] As a variant or complementarily, the electron beam source 110 can comprise a third vacuum pump 115. The third vacuum pump 115 is connected to the electron generation chamber 112, is adapted to form a higher vacuum in the generation chamber, and / or is adapted to compensate for possible backflows generated from the processing chamber 130.

[0103] Inside the tube 114, the emitted electron beam F is directed in the direction X of the beam plane PF, i.e., in a direction perpendicular to the longitudinal direction Z.

[0104] In certain applications, the trajectory F1 of the electron beam in the processing chamber 130 can follow the same direction as the trajectory of the emitted electron beam or can at least not be directed in a specific direction. For example, the electron beam is not directed towards the target 104. The electron beam is, for example, a noble gas such as He, Ne, Ar, Kr or Xe, or O 2 , N 2 , F 2 , CH 4 , SF 6It can be adapted to generate plasma using a process gas introduced into the processing chamber, such as a reaction gas. The plasma can be directed towards the substrate 106 for cleaning and / or etching the substrate 106. The plasma can also be directed towards the target 104 to remove particles from the target, and the particles can be directed towards the substrate 106 for performing thin film deposition by sputtering techniques.

[0105] In other applications, the trajectory F2 of the electron beam in the processing chamber 130 can be deflected to follow a given direction within the processing chamber. For example, the electron beam can be directed towards the target 104. The electron beam can be adapted to, for example, convert the molecules of the target into the gas phase. At least some of these molecules then precipitate in solid form onto the substrate 106 for performing thin film deposition by electron beam evaporation techniques.

[0106] The apparatus can comprise an electron beam deflection device, such as an electromagnet or a permanent magnet 140, adapted to deflect the electron beam within the processing chamber 130. The deflection device can be at least partially disposed within the processing chamber. As a variant, the deflection device can be disposed entirely outside the processing chamber.

[0107] The deflection device, such as the permanent magnet 140, can be movable along the longitudinal direction Z, for example, using a third motor 139. More generally, the deflection device can be capable of translational and / or rotational movement, and thus can control or not control the trajectory of the electron beam over a very wide energy range, such as between 100 V and 50 kV, for example.

[0108] A focusing device, such as the electromagnet 116, and a deflection device, such as the permanent magnet 140, are preferably adapted to form magnetic fields having a lateral, i.e., perpendicular, direction with respect to each other.

[0109] The target can be made from copper, tantalum, oxides of copper or tantalum, or any other solid or liquid material, such as a metal or oxide material, that can induce a sputtering or evaporation process.

[0110] According to the processing technology implemented within the apparatus, the target and / or the substrate can be biased. The bias application can typically be, for the substrate, for example, several tens of volts in plasma cleaning or plasma layer densification mode, and / or for the target, any bias voltage that enables obtaining an energy higher than the sputtering or evaporation threshold, typically in the range of 100 V to 10 kV.

[0111] FIG. 2 is a schematic cross-sectional view of an electron beam apparatus 200 according to a second embodiment, and is different from the apparatus 100 of FIG. 1 in that it includes a plurality of electron beam sources, namely the first beam source 110 and the second beam source 210 shown in FIG. 2. The first permanent magnet 140 can be adapted to deflect the electron beam from the first beam source 110, and the second permanent magnet 240 can be adapted to deflect the electron beam generated from the second beam source 210. The permanent magnets can be arranged on each one support or, as shown in the figure, on a common support 241 (common support in the illustrated mode), and each support is movable, for example, by a motor 239. The permanent magnets can be arranged under the target 104.

[0112] The evacuation chamber 120 is arranged between the processing chamber 130 and each of the first electron beam source 110 and the second electron beam source 210.

[0113] The fourth vacuum pump 226 can be connected to the evacuation chamber 120 in the vicinity of the second beam source 210, preferably as a supplement to the first vacuum pump 126 connected in the vicinity of the first beam source 110.

[0114] The electron beam device 200 includes at least two first ports 122, 222 and two second ports 124, 224. In the illustrated configuration, the first ports 122, 222 are disposed on the inner wall 121 of the exhaust chamber 120, i.e., on the side wall 132 of the processing chamber 130. The second ports 124, 224 are disposed on the outer wall 123 of the exhaust chamber 120.

[0115] The first and second ports 122, 124 associated with the first electron beam source 110 are preferably aligned with the emission direction of the electron beam from the first beam source. The first and second ports 222, 224 associated with the second electron beam source 210 are preferably aligned with the emission direction of the electron beam from the second beam source.

[0116] Each of the first and second electron beam sources may be similar to the electron beam source 110 in FIG. 1, but the volume V4 of the second electron generation chamber 212 is not necessarily equal to the volume V1 of the first electron generation chamber 112.

[0117] In the illustrated mode, the electron beam sources are arranged to emit electrons along substantially the same beam plane PF. As a variant, the electron beam sources may be arranged to emit electrons along different beam planes parallel to each other.

[0118] Other features of the device 200 in FIG. 2 may be the same as those of the device 100 in FIG. 1. The variants described in connection with FIG. 1 may also be applied to the device 200 in FIG. 2.

[0119] It is also possible to have more than two electron beam sources and other vacuum pumps associated with other electron beam sources. The exhaust chamber is then disposed between the processing chamber and each electron beam source. The first and second ports associated with each electron beam source are preferably aligned with the emission direction of the electron beam from the electron beam source.

[0120] For example, FIG. 3 shows a top view of a device similar to the device of FIG. 2, and in this case, it may be possible to arrange a third electron beam source 310.

[0121] At least one electron beam source is adapted to form electrons at a low energy typically in the range of 0.1 to 2 keV, suitable for plasma cleaning, densification of plasma layers, plasma etching, and / or sputtering, and to form high-power electrons typically in the range of 2 keV to 30 keV at an intensity typically in the range of 10 to 200 mA per beam source, more suitable for electron beam evaporation.

[0122] By increasing the electron beam sources assembled around the processing chamber, the overall intensity of the formed electrons can be increased accordingly.

[0123] FIG. 4 is a top view of an electron beam device 400 according to a third embodiment, which is mainly different from the devices 100 and 200 of FIGS. 1 to 3 in that the main body 40 is not cylindrical but parallelepiped. The processing chamber 430 is defined by the wall of this parallelepiped main body and an exhaust chamber 420 arranged inside the parallelepiped main body and also forming a ring shape of the parallelepiped. According to a modification not shown, the exhaust chamber can be arranged outside the parallelepiped main body and opposite to one or more side walls of the main body.

[0124] The minimum dimension of the cross-section of the processing chamber 430 taken in the beam plane corresponds in this case to a width L3, which corresponds to the width L4 of the main body minus the width of the exhaust chamber.

[0125] The illustrated electron beam sources 110, 210, 310 may be similar to the above-described beam sources and may be arranged to emit electrons along a plurality of directions X, X', Y in a single beam plane PF or along a plurality of directions in a plurality of beam planes parallel to each other. Further, the beam sources can be arranged on two different side walls of the main body, such as two parallel side walls and / or two perpendicular side walls to each other.

[0126] Various embodiments and variations have been described. Those skilled in the art will understand that specific features of these various embodiments and variations can be combined, and other variations will be readily envisioned by those skilled in the art.

[0127] Finally, the actual implementation of the embodiments and variations described herein is within the capabilities of those skilled in the art based on the functional descriptions provided above.

Claims

Claim 1 An electron beam apparatus (100, 200, 400), comprising: A processing chamber (130, 430) having a longitudinal direction (Z); At least one electron beam source (110, 210, 310), each beam source being adapted to emit an electron beam in a beam plane (PF) substantially transverse to the longitudinal direction (Z) for inducing a plasma or evaporation point in the processing chamber (130, 430) for processing the surface of a component (106), the at least one electron beam source being located outside the processing chamber; An exhaust chamber (120, 420) connected to the first vacuum pump (126), the processing chamber, and the at least one electron beam source, disposed between the processing chamber and the at least one electron beam source, and adapted to perform differential vacuum evacuation of the processing chamber; At least one first port (122, 222) for passage of the electron beam between the processing chamber and the exhaust chamber; At least one second port (124, 224) for passage of the electron beam between the exhaust chamber and the at least one electron beam source; An electron beam apparatus comprising the above components. Claim 2 The diameter of the smallest circle inscribed by the at least one first port is 1 / 8 or less, for example 1 / 10 or less, of the smallest dimension (D3, L3) of the cross-section of the processing chamber (130) taken in the beam plane, and / or The diameter of the smallest circle inscribed by the at least one second port (124) is 1 / 8 or less, for example 1 / 10 or less, of the smallest dimension of the cross-section of the processing chamber (130) taken in the beam plane. The apparatus according to claim 1. Claim 3 The at least one first port (122, 222) is disposed on the side wall (132) of the processing chamber such that the electron beam emitted by the at least one electron beam source can enter the processing chamber through the at least one first port. The apparatus according to claim 1 or 2. Claim 4 The at least one second port (124, 224) is disposed on the side wall (123) of the exhaust chamber such that the electron beam emitted by the at least one electron beam source can enter the exhaust chamber through the at least one second port. The apparatus according to any one of claims 1 to 3. Claim 5 The apparatus according to any one of claims 1 to 4, wherein the at least one electron beam source, the processing chamber, and the exhaust chamber form a closed assembly.

6. The apparatus according to any one of claims 1 to 5, wherein the processing chamber (130, 430) is adapted to emit particles towards the component (106) so as to induce a thin film deposition process on the component by sputtering technology or electron beam evaporation technology under the influence of the electron beam or the plasma.

7. The apparatus according to claim 6, wherein the processing chamber (130, 430) comprises a first support base (134) adapted to support the target (104) and which is, for example, movable.

8. The apparatus according to claim 7, wherein the first support base comprises a crucible, for example a cooled crucible, or consists of a crucible, for example a cooled crucible.

9. A bias source for setting the voltage of the target (104) in the range of 0 to 10 kV, preferably 2 to 5 kV, and / or Components for cooling the target The apparatus according to any one of claims 6 to 8, further comprising.

10. The apparatus according to any one of claims 1 to 9, wherein the processing chamber (130, 430) comprises a second support base (136) adapted to support the component (106) to be processed and which is, for example, movable.

11. The apparatus according to any one of claims 1 to 10, comprising a deflection device (140, 240), such as an electromagnet or a permanent magnet, adapted to deflect the electron beam within the processing chamber (130, 430) and which is, for example, movable.

12. The apparatus according to any one of claims 1 to 11, wherein the processing chamber (130, 430) is defined by the walls of a cylindrical or parallelepiped body, and the exhaust chamber (120, 420) is arranged inside or outside the body and relative to the side walls of the body, and the exhaust chamber is, for example, coaxial with the processing chamber.

13. The at least one electron beam source (110, 210, 310) comprises an electron generation chamber (112, 212) and a tube (114, 214) between the electron generation chamber and the processing chamber (130, 430), each tube being connected to the evacuation chamber (120, 420), and the at least one second port (124) being between the evacuation chamber and the tube of the at least one electron beam source, the apparatus according to any one of claims 1 to 12.

14. The at least one electron beam source (110, 210, 310) comprises a focusing device (116, 216), such as an electromagnet, adapted to focus the electron beam and, for example, adapted to direct the electron beam towards the processing chamber (130, 430), the apparatus according to any one of claims 1 to 13.

15. The apparatus according to any one of claims 1 to 14 comprises a second vacuum pump (142) connected to the processing chamber (130, 430) and / or a third vacuum pump (115) connected to the at least one electron beam source (110, 210, 310).

16. The apparatus according to any one of claims 1 to 15 comprises a plurality of electron beam sources (110, 210, 310) external to the processing chamber (130, 430).

17. At least two of the electron beam sources are adapted to emit electrons along a single beam plane or along two mutually parallel beam planes, the apparatus according to claim 16.

18. The at least one first port and / or the at least one second port correspond to ports of a diaphragm, the apparatus according to any one of claims 1 to 17.

19. Thin film deposition by sputtering, Thin film deposition by electron beam evaporation, Cleaning using plasma, Densification of a layer using plasma, and / or Plasma etching The apparatus according to any one of claims 1 to 18 is adapted to perform.

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