Vacuum-insulated heating reactor configuration

Abstract

The sidewall assembly of the substrate processing chamber has a composite structure including a first material, an inner layer composed of an inward-facing surface facing the chamber, an outer layer composed of a second material surrounding the inner layer, and an intermediate layer disposed around the inner layer between the inner layer and the outer layer to thermally insulate the outer layer from the inner layer.

Description

Technical Field

[0001] [Cross - Reference to Related Applications] This application claims the benefit of U.S. Provisional Application No. 63 / 349,967, filed Jun. 7, 2022. The entire disclosure of the above application is incorporated herein by reference.

[0002] This disclosure relates to a substrate processing system, and more particularly, to the configuration of a chamber wall of a substrate processing chamber or reactor.

Background Art

[0003] The background description provided here is for the purpose of generally presenting the content of the present disclosure. Within the scope described in this background art section, the research by the inventors named at the present time, as well as aspects of the description that cannot be separately regarded as prior art at the time of filing, are not admitted as prior art against the present disclosure, whether explicitly or implicitly.

[0004] Substrate processing systems typically include a plurality of processing chambers (also referred to as process modules) that perform deposition, etching, and other processing of substrates such as semiconductor wafers. Examples of processes that can be performed on a substrate include chemical vapor deposition (CVD), plasma - enhanced CVD (PECVD), chemically - enhanced plasma vapor deposition (CEPVD), atomic layer deposition (ALD), and plasma - enhanced ALD (PEALD). Further examples of processes that can be performed on a substrate include etching (e.g., chemical etching, plasma etching, reactive ion etching, etc.) and cleaning processes.

[0005] During processing, the substrate is placed on a substrate support or susceptor such as a pedestal or an electrostatic chuck (ESC) in a processing chamber of a substrate processing system. In some processes, during deposition, a gas mixture containing one or more precursors may be introduced into the processing chamber and plasma may be ignited to facilitate a chemical reaction. In other processes, during etching, a gas mixture containing an etching gas may be introduced into the processing chamber and plasma may be ignited to facilitate a chemical reaction. A computer-controlled robot is used to transfer the substrate from one processing chamber to another in the order in which the substrate is to be processed.

[0006] Some processes are performed in a heated processing chamber. For example, the substrate support, the upper electrode or showerhead, and / or other components of the processing chamber may be actively heated.

Summary of the Invention

[0007] The sidewall assembly of a substrate processing chamber has a composite structure including a first material, an inner layer composed of an inward-facing surface facing the chamber, an outer layer composed of a second material surrounding the inner layer, and an intermediate layer disposed around the inner layer between the inner layer and the outer layer to thermally insulate the outer layer from the inner layer.

[0008] In other features, the inner layer is composed of a first material having a first thermal conductivity, the inward-facing surface facing the chamber absorbs and distributes heat generated in the substrate processing chamber, the outer layer is composed of a second material having a second thermal conductivity lower than the first thermal conductivity, the intermediate layer is composed of a third material having a third thermal conductivity lower than the first thermal conductivity, and thermally insulates the outer layer from the inner layer.

[0009] In other features, the inner layer is composed of aluminum. The outer layer is composed of aluminum. The outer layer is composed of a polymer. The intermediate layer is composed of a discontinuous heat-trapping structure. The discontinuous heat-trapping structure defines a plurality of interconnected cells within the intermediate layer. The heat-trapping structure is composed of one of a honeycomb structure, a structurally expanded metal, a lattice structure, or a porous structure. The heat-trapping structure is a honeycomb structure composed of one or more of a synthetic polymer or a synthetic copolymer. The honeycomb structure is composed of one or more of aramid, cellulose fiber, rayon, or modacrylic.

[0010] In other features, a vacuum is formed within the plurality of interconnected cells of the intermediate layer. At least one of the inward-facing surface of the outer layer and the outward-facing surface of the inner layer is provided with a super-reflective infrared coating. The coating is a barium sulfate coating. The sidewall assembly further includes an adhesive film disposed between the inner layer and the intermediate layer, between the intermediate layer and the outer layer, or both between the inner layer and the intermediate layer and between the intermediate layer and the outer layer. The sidewall assembly further includes at least one of the bottom wall and the top wall of the substrate processing chamber.

[0011] The processing chamber for the substrate processing system has a composite structure including a sidewall assembly surrounding the reactor volume portion and a pedestal disposed within the reactor volume portion. The pedestal includes a heating element for heating a substrate supported on the pedestal. The sidewall assembly includes an inner layer having an inward-facing surface facing the reactor volume portion for absorbing and distributing heat generated within the reactor volume portion, an outer layer surrounding the inner layer and defining a gap between the inner layer and the outer layer, and an intermediate layer disposed around the inner layer in the gap defined between the inner layer and the outer layer. The intermediate layer is composed of a discontinuous heat-trapping structure for thermally insulating the outer layer from the inner layer.

[0012] In other features, the inner layer is made of aluminum, the outer layer is made of one of polymer and aluminum, and the intermediate layer is made of a honeycomb structure that defines a plurality of interconnected cells within the intermediate layer. The honeycomb structure is made of one or more of aramid, cellulose fiber, rayon, and modacrylic. The honeycomb structure is made of expanded metal. A vacuum is formed in the gap.

[0013] Other applicable fields of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and the specific examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure.

Brief Description of the Drawings

[0014] The present disclosure will be more fully understood from the detailed description and the accompanying drawings.

[0015]

Figure 1

[0016]

Figure 2A

[0017]

Figure 2B

[0018]

Figure 2C

[0019]

Figure 2D

[0020]

Figure 3

[0021]

Figure 4

[0022] In the drawings, reference numbers may be reused to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE INVENTION

[0023] Typically, a resistively heated pedestal or susceptor is used to heat a substrate during a semiconductor substrate process such as during the application of deposition. The pedestal typically comprises a heat conductor made of a metal such as aluminum, which monolithically houses a heater element for heating the heat conductor. The heat conductor spreads the heat flow rate to heat the substrate disposed on the pedestal during processing. Thermal coupling of the substrate to the pedestal is achieved by combining gas conduction with heat dissipation between the substrate and the heated pedestal. Additionally, other components (e.g., upper electrodes or showerheads) may also be heated to improve process uniformity.

[0024] The processing chamber (e.g., a reactor) is typically manufactured from aluminum sheet material and / or stainless steel. In one example, the processing chamber is manufactured by subtractive machining from an aluminum sheet material. In another example, the processing chamber is manufactured by welding a plate or cylindrical shell of stainless steel or aluminum to form the sidewalls of the processing chamber. By manufacturing the processing chamber in this way, high geometric control of precise reactor features is enabled, along with a relatively high temperature uniformity. However, the materials used in these processing chambers absorb a large amount of heat from the system used to heat the substrate. For example, while resistive heating technology has an efficiency of 100% in converting electrical energy to thermal energy, only 25% of the converted thermal energy is actually used to heat the substrate support, the showerhead, and the substrate, and the remaining 75% is lost by being absorbed by other components (e.g., the sidewalls of the processing chamber).

[0025] The processing chamber according to the present disclosure comprises an insulated (e.g., vacuum-insulated) composite sidewall. The sidewall is composed of an inner layer facing the chamber (e.g., having a chamber-facing surface facing the internal volume portion of the processing chamber), an outer layer, and a vacuum-insulated intermediate layer defined between the inner layer and the outer layer. For example, by configuring the inner layer from high-purity aluminum, the geometric features become precise, the heat absorption is high, facilitating temperature uniformity, and particle generation and interference with process chemicals are minimized. The outer layer is composed of a polymer or low-cost (i.e., compared to the inner layer) aluminum. The outer layer is the layer facing the environment and is not exposed to the interior of the processing chamber. In some examples, the outward-facing surface of the inner layer and / or the inward-facing surface of the outer layer may have a super-reflective infrared coating such as a barium sulfate coating.

[0026] The intermediate layer may comprise a honeycomb structure or other discontinuous structures, such as a structurally expanded metal (e.g., aluminum), a lattice, or a porous structure, etc. As an example, the intermediate layer is composed of a honeycomb tape or a porous tape. Thus, the intermediate layer defines a plurality of interconnected cells (i.e., volume portions or voids) in the gap between the inner layer and the outer layer. A vacuum may be formed between the inner layer and the outer layer by pumping down or evacuating the gap. The vacuum may be formed during production. In other examples, the gap may be pumped down to a vacuum by a substrate processing system.

[0027] In this way, the intermediate layer captures the radiant heat emitted from the inner layer, and the vacuum defined in the gap thermally insulates between the inner layer and the outer layer.

[0028] FIG. 1 shows an example of a substrate processing system (hereinafter, system 100). The illustrated system 100 can be used to process a substrate using a chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), chemically-excited plasma vapor deposition (CEPVD), atomic layer deposition (ALD), or plasma-enhanced ALD (PEALD) process. In other examples, system 100 may be used to perform an etching process, or both a deposition process and an etching process, etc.

[0029] System 100 includes a processing chamber (e.g., a reactor) 101 and a gas distribution system 102. The gas distribution system 102 includes a plurality of gas sources 104, a plurality of valves 106 connected to the gas sources 104, and a plurality of mass flow controllers (MFCs) 108 connected to the valves 106. The gas sources 104 supply various gases including process gases, precursors, purge gases, inert gases, cleaning gases, etc. Each MFC 108 controls the mass flow rate of the gas.

[0030] In some applications, the gas distribution system 102 further includes a vapor delivery system 110 for supplying one or more vaporized precursors through one or more valves 112. One or more gases from each MFC 108 and, when used, one or more vaporized precursors are supplied to a mixing manifold 114. The gas or mixed gas from the mixing manifold 114 is supplied to the processing chamber 101 through a valve assembly (e.g., a Pulsed Valve Manifold or PVM assembly) 116.

[0031] The processing chamber 101 includes a showerhead 120 and a substrate support such as a pedestal 130. The showerhead 120 is attached to the top plate of the processing chamber 101. The showerhead 120 receives the gas or mixed gas from the mixing manifold 114 through the valve assembly 116. The showerhead 120 includes a base portion 122 and a stem portion 124. The stem portion 124 extends from the center of the base portion 122 and is attached to the top plate of the processing chamber 101. The base portion 122 is cylindrical and includes a plurality of through holes (not shown), through which the gas or mixed gas is supplied into the processing chamber 101.

[0032] The pedestal 130 includes a base portion 132 and a stem portion 134. The stem portion 134 is typically cylindrical or can be Y-shaped, with a tapered (i.e., the top of the Y) portion attached to the bottom of the base portion 132. The stem portion 134 extends from the base portion 132 and is attached to the bottom of the processing chamber 101. The stem portion 132 is also cylindrical. The substrate 140 is disposed on the upper surface of the base portion 132 of the pedestal 130 during processing. The base portion 132 includes a heating element (e.g., an array of resistive heating elements) 150 for heating the substrate 140. In some examples, the showerhead 120 is heated (e.g., using one or more resistive heating elements).

[0033] Although not shown, the base portion 132 of the pedestal 130 may include lift pins for holding, lowering, and raising the substrate 140 with respect to the base portion 132 of the pedestal 130. Optionally, a shaft (illustrated and described below) extending through the stem portion 132 and the base portion 132 of the pedestal 130 may be used to hold, lower, and raise the substrate 140 with respect to the base portion 132 of the pedestal 130. The lift pins and the shaft may be used in combination to hold, lower, and raise the substrate 140 with respect to the base portion 132 of the pedestal 130.

[0034] In some applications, the substrate 140 may be processed using plasma. The system 100 includes a radio frequency (RF) system 142 used to generate plasma within the processing chamber 101. The RF system 142 includes an RF generator 144 and a matching circuit 146. The RF system 142 supplies RF power to the showerhead 120 with the pedestal 130 grounded. Alternatively, although not shown, RF power may be supplied to the pedestal 130 with the showerhead 120 grounded. The RF power activates the gas or gas mixture supplied through the showerhead 120 and generates plasma between the showerhead 120 and the substrate 140 disposed on the pedestal 130.

[0035] The showerhead 120 and the pedestal 130 include temperature sensors 126, 136 for sensing the temperatures of the showerhead 120 and the pedestal 130. The showerhead 120 and the pedestal 130 may include cooling channels (not shown). A coolant is circulated through the cooling channels to control the temperatures of the showerhead 120 and the pedestal 130. The coolant supply 160 may supply the coolant to the cooling channels within the showerhead 120 and the pedestal 130 via valves 162, 164.

[0036] A vacuum pump 170 is connected to the bottom of the processing chamber 101 through a valve 172. The vacuum pump 170 is used to maintain the vacuum in the processing chamber 101 and discharge reactants and process by-products from the processing chamber 101. Further, when a vacuum clamp is used, the vacuum pump 170 is connected to the stem portion 134 of the pedestal 130 through a valve 174. The vacuum pump 170 maintains a vacuum through an annular volume portion (illustrated and described below) around the shaft of the stem portion 134 of the pedestal 130 to clamp the substrate 140 to the pedestal 130.

[0037] The controller 180 controls various elements of the system 100 (e.g., the gas distribution system 102, valves, the RF system 142, the heating element 150, the coolant supply 160, the vacuum pump 170, etc.). The controller 180 receives data from the temperature sensors 126, 136 and controls the temperatures of the showerhead 120 and the pedestal 130 by controlling the heating element 150 and the coolant supply 160.

[0038] The processing chamber 101 according to the present disclosure includes a composite (e.g., vacuum-insulated composite) sidewall 190. As will be described in more detail below, the sidewall 190 is composed of an inner layer facing the chamber, an outer layer, and a vacuum-insulated (i.e., thermally resistant) intermediate layer defined between the inner layer and the outer layer. The intermediate layer is configured to provide both thermal insulation that minimizes heat transfer from the inner layer to the outer layer and capture of radiant heat emitted from the inner layer. In some examples, the intermediate layer includes a discontinuous (e.g., honeycomb-shaped, structurally expanded, lattice-shaped, perforated) heat capture structure that captures radiant heat. Thus, the intermediate layer provides thermal insulation by including a plurality of interconnected cells (e.g., defined within the heat capture structure) that can be pumped down to a vacuum. The intermediate layer combines structural rigidity between the inner layer and the outer layer, low thermal conductivity from the inner layer to the outer layer, and minimization of heat loss caused by the transfer of convective heat, conductive heat, and radiant heat.

[0039] Although the side wall 190 has been described, the bottom wall or bottom surface, the top wall or top surface (e.g., the lid), and / or other structures of the processing chamber 101 may also be constituted by the vacuum insulating side wall described later.

[0040] An exemplary processing chamber (e.g., a side wall assembly for a substrate processing chamber with a composite side wall) 200 according to the present disclosure is shown in the cross-sectional view of FIG. 2A and the (planar) view seen from above in FIG. 2B. Although shown generally as cylindrical, the processing chamber 200 may have other shapes. The processing chamber 200 surrounds a processing (e.g., reactor) volume portion 202.

[0041] The side wall assembly including the side wall 204 of the processing chamber 200 has a thermally insulated composite configuration as described above and will be described in more detail later. The side wall 204 is composed of an inner layer 208, an outer layer 212, and a thermally insulated intermediate layer 216 defined between the inner layer 208 and the outer layer 212. The inner layer 208 is composed of two side portions or surfaces. The first surface of the inner layer 208 is a chamber-facing surface (i.e., the surface facing the internal volume portion of the processing chamber 200). The second surface on the opposite side of the first surface faces the intermediate layer 216.

[0042] For example, the inner layer 208 is composed of aluminum, forged aluminum alloy, stainless steel or stainless steel alloy, nickel-chromium alloy, etc. The outer layer 212 may be composed of a metal (e.g., steel alloy, stainless steel, aluminum or aluminum alloy, etc.) or a polymer. The inner layer 208 has a higher thermal conductivity than the intermediate layer 216 and the outer layer 212. For example, the inner layer 208 is composed of a material having a first thermal conductivity, the intermediate layer 216 is composed of a material having a second thermal conductivity lower than the first thermal conductivity, and the intermediate layer 216 is composed of a third material having a third thermal conductivity lower than the first thermal conductivity. In some examples, the third thermal conductivity is lower than the second thermal conductivity.

[0043] Furthermore, although FIG. 2A shows a structure without a bottom wall or bottom surface or a top wall or top surface (e.g., a lid), the processing chamber 200 according to the present disclosure may also include a top wall and / or a bottom wall configured in the same or a similar manner as the side walls (i.e., using the same composite structure as the side walls). For example, FIG. 2C shows an example of a processing chamber 200 (e.g., a side wall assembly) having a thermally insulated composite configuration with a top surface and a bottom surface, each of the top surface and the bottom surface being composed of an inner layer 208, an outer layer 212, and an intermediate layer 216.

[0044] The relative thicknesses of the inner layer 208, the outer layer 212, and the intermediate layer 216 may vary based on the application example, the overall size of the processing chamber 200, etc. For example, each layer may have a thickness in the range of 1.0 to 100 mm. In one example, the inner layer 208 is thinner than the outer layer 212 and the intermediate layer 216.

[0045] The intermediate layer 216 is disposed within a gap 220 defined between the inner layer 208 and the outer layer 212. In one example, the intermediate layer 216 is composed of a discontinuous heat-trapping structure that defines a plurality of interconnected cells. For example, the heat-trapping structure is a honeycomb structure, and the gap 220 is evacuated (e.g., pumped down) during production / manufacture so that a vacuum is formed between the inner layer 208 and the outer layer 212. In other words, the vacuum is formed within the cells defined within the honeycomb structure. In other examples, the intermediate layer 216 is composed of a gap pumped down to a vacuum without having a honeycomb structure or other structure, a continuous insulating layer, etc.

[0046] Figure 2D is a close-up view of the configuration of side wall 204. For example, inner layer 208, outer layer 212, and intermediate layer 216 are shown at the upper end 224 of side wall 204. As shown, intermediate layer 216 is a discontinuous heat-trapping structure. More specifically, intermediate layer 216 is a honeycomb structure that defines a plurality of interconnected cells 228. The honeycomb structure may be composed of metal, or one or more polymers and / or combinations of polymers (aramid, cellulose fiber, rayon, modacrylic, and / or other synthetic polymers or copolymers). In one example, the honeycomb structure is composed of a structurally expanded metal such as structurally expanded aluminum, steel, or a steel alloy. In another example, the honeycomb structure is composed of a ceramic material (aluminum oxide, quartz, etc.).

[0047] In some examples, the outer facing surface 232 of inner layer 208 and / or the inner facing surface 236 of outer layer 212 may have a super-reflective infrared coating 240 such as a barium sulfate coating. As shown, the outer facing surface 232 of inner layer 208 comprises a coating 240 for reflecting heat from inner layer 208 towards the interior of processing chamber 200. Thus, coating 240 further reduces heat transfer from inner layer 208 to intermediate layer 216.

[0048] In some examples, intermediate layer 216 is attached to inner layer 208 using an adhesive tape or adhesive film 244. For example, adhesive film 244 is composed of a high-temperature polymer. Adhesive film 244 is disposed on the outer facing surface 232 of inner layer 208. Intermediate layer 216 is disposed on adhesive film 244, bonding intermediate layer 216 to inner layer 208. Although not shown, adhesive film 244 may be used to bond outer layer 212 to intermediate layer 216. For example, adhesive film 244 is disposed between intermediate layer 216 and outer layer 212.

[0049] As shown, the upper end of the inner layer 208 includes an annular rim, flange, or lip 248 that extends radially outward toward the outer layer 212 (i.e., at the upper end 224 of the sidewall 204). In other words, the rim 248 overlaps the outer layer 212. Conversely, a similar rim may extend radially outward from the lower end of the inner layer 208. In this way, the assembly comprising the inner layer 208 and the outer layer 212 defines a gap 220 and encloses the intermediate layer 216 within the gap 220. In other examples, the outer layer 212 may include a rim that extends radially inward. In still other examples, both the inner layer 208 and the outer layer 212 include complementary rims that extend toward each other above and below the intermediate layer 216. Other suitable configurations may be used.

[0050] In this way, the inner layer 208 and the outer layer 212 seal the gap 220 from the atmosphere. For example, a vacuum is formed in the gap 220 during the production / manufacture of the processing chamber 200. The inner layer 208 and the outer layer 212 are integrally fixed and attached to hold a vacuum within the gap 220. In one example, the inner layer 208 and the outer layer 212 are integrally welded or brazed. In another example, the outer layer 212 is attached to the inner layer 208 using an adhesive having thermal insulation properties (e.g., a thermal epoxy).

[0051] In other examples, the gap 220 may be pumped down to a vacuum during processing. For example, the gap 220 may have a port or valve (not shown) that is selectively in fluid communication with the vacuum pump 170. In this way, the gap 220 may be pumped down to a vacuum periodically (e.g., before performing a process or process step).

[0052] FIG. 3 shows an exemplary intermediate layer 300 of one of the side walls 204. In this example, the intermediate layer 300 is composed of a honeycomb structure 304. In other words, the intermediate layer 300 is composed of a discontinuous heat-trapping structure that defines a plurality of interconnected cells 308. The intermediate layer 300 is coupled to the inner layer 312 using an adhesive film 316. The outer layer 320 is disposed on the intermediate layer 300. The intermediate layer 300 is thereby encapsulated within a hermetically sealed gap 324 defined between the inner layer 312 and the outer layer 320.

[0053] Accordingly, the honeycomb structure 304 provides structural rigidity to the side wall 204, and more specifically, to the inner layer 312. For example, the honeycomb structure 304 is in direct or indirect (i.e., via the film 316) contact with the inner layer 312 and the outer layer 320. The honeycomb structure 304 is composed of a material selected to absorb radiant heat emitted from the inner layer 312, such as aluminum. Further, the voids defined within the interconnected cells 308 further reduce heat transfer from the inner layer 312 to the outer layer 320. In an example where a vacuum is formed within the gap 324 (and the cells 308), heat transfer is further reduced.

[0054] FIG. 4 shows the steps of an exemplary method 400 for manufacturing a process chamber assembly in accordance with the present disclosure. At 404, a chamber opposing layer (e.g., inner layer 208) is formed. As an example, the inner layer is die stamped from a sheet of aluminum and then reformed (e.g., rolled) into a cylindrical shape with the two ends of the sheet being integrally welded. In another example, the inner layer is formed using a thin wall aluminum die casting process.

[0055] At 408, an intermediate layer (e.g., intermediate layer 216) is disposed on the inner layer. For example, the intermediate layer is a honeycomb tape wrapped around and adhered to the inner layer. In one example, the intermediate layer is adhered to the inner layer using an adhesive tape.

[0056] At 412, an outer layer is disposed around the inner layer and the intermediate layer. In one example, the outer layer is composed of aluminum formed using the same process (e.g., die casting or other process) as the inner layer. In another embodiment, the outer layer is composed of a polymer. The outer layer may be composed of a single piece or multiple pieces integrally melted (e.g., welded) around the inner layer and the intermediate layer.

[0057] At 416, optionally, a vacuum is formed within the processing chamber assembly. For example, a vacuum is formed in a gap defined between the inner layer and the outer layer. In one embodiment, the gap is pumped down to a vacuum through a one-way port, an opening or seam between the inner and outer layers that is later sealed, etc. In another embodiment, the gap is pumped down to a vacuum during processing (e.g., using vacuum pump 170). At 420, the processing chamber assembly is installed in a substrate processing system.

[0058] In FIG. 4, the method 400 described above is merely an example of a method for manufacturing a processing chamber according to the principles of the present disclosure, and other methods may be used. For example, an additional production method may be used to manufacture the entire composite structure. In another embodiment, each layer of the processing chamber may be joined using mechanical fasteners, joints, clamps, etc. In yet another embodiment, the layers may be joined using press fitting or shrink fitting methods.

[0059] The foregoing description is merely for the purpose of explanation and is not intended to limit the present disclosure, its application, or uses. The broad teachings of the present disclosure can be implemented in various forms. Thus, while the present disclosure includes specific examples, upon review of the drawings, the specification, and the following claims, other modifications will become apparent, and the true scope of the present disclosure should not be so limited. It should be understood that one or more steps within a method may be performed in a different order (or simultaneously) without changing the principles of the present disclosure. Further, while each embodiment has been described as having specific features, any one or more of those features described with respect to any embodiment of the present disclosure may be implemented in and / or combined with the features of any other embodiment, even if the combination is not explicitly recited, i.e., the described embodiments are not mutually exclusive, and substituting one or more embodiments for each other remains within the scope of the present disclosure.

[0060] Spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using various terms such as "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless explicitly stated to be "direct," when a relationship between a first and a second element is described in the above disclosure, the relationship can be a direct relationship with no other intervening elements between the first and second elements, but can also be an indirect relationship with one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the expression "at least one of A, B, and C" should be interpreted to mean the logic (A or B or C) using non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C."

[0061] In some embodiments, the controller may be part of a system that may also be part of the above-described examples. Such a system may include semiconductor processing equipment such as one or more processing tools, one or more chambers, one or more processing platforms, and / or certain processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling the operation of the system before, during, and after the processing of semiconductor wafers or substrates. This electronics may be referred to as a "controller" that can control various components or sub-components of the system(s). The controller, depending on the processing requirements and / or the type of system, may be programmed to control any of the processes disclosed herein, such as the delivery of processing gases, temperature setting (e.g., heating and / or cooling), pressure setting, vacuum setting, power setting, setting of radio frequency (RF) generators, setting of RF matching circuits, frequency setting, flow rate setting, fluid delivery setting, position and motion setting, loading and unloading of wafers to and from tools, and loading and unloading of wafers to and from other transfer tools and / or load locks connected or interfaced with a particular system.

[0062] Broadly speaking, the controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that, for example, receive commands, issue commands, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuits may include chips in the form of firmware that stores program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions are instructions transmitted to the controller in the form of various individual settings (or program files), and may define operating parameters for performing a specific process on a semiconductor wafer or for the semiconductor wafer, or for the system. The operating parameters may, in some embodiments, be part of a recipe defined by a process engineer to achieve one or more processing steps in the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or types of wafers.

[0063] In some embodiments, the controller may be part of a computer integrated with, coupled to, or otherwise network-connected to the system, or may be coupled to such a computer, or may be a combination thereof. For example, the controller may be within the "cloud" or all or part of the host computer system of a manufacturing plant that enables remote access to wafer processing. This computer can monitor the current progress of manufacturing operations, verify the history of past manufacturing operations, and verify trends or performance criteria from multiple manufacturing operations to change the parameters of the current process, set the process steps following the current process, or start a new process by enabling remote access to the system. In some examples, a remote computer (e.g., a server) can provide a process recipe to the system through a network that may include a local network or the Internet. The remote computer may include a user interface that enables input or programming of parameters and / or settings, and the parameters and / or settings are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in a data format that defines the parameters of each process step performed during one or more operations. It should be understood that this parameter may be specific to the type of process being performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by including one or more separate controllers network-connected to each other and working towards a common purpose such as the processes and controls described herein. Examples of controllers distributed for such a purpose include one or more integrated circuits on a chamber that are combined to communicate with one or more integrated circuits installed remotely (e.g., at the platform level or as part of a remote computer) to control the process on the chamber.

[0064] Although not limited, exemplary systems may include a plasma etching chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etching chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etching (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system that may be associated with or used in the manufacture and / or production of semiconductor wafers.

[0065] As described above, depending on one or more process steps performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools installed throughout the factory, main computers, other controllers, or tools used for material transport to and from the wafer container at the tool location and / or load port within the semiconductor manufacturing facility.

Claims

1. A sidewall assembly of a substrate processing chamber, having a composite structure, said composite structure comprising an inner layer made of a first material and having an inward-facing surface facing the chamber; an outer layer made of a second material and surrounding said inner layer; an intermediate layer disposed around the periphery of said inner layer between said inner layer and said outer layer and thermally insulating said outer layer from said inner layer; The sidewall assembly comprising.

2. The sidewall assembly according to claim 1, wherein said inner layer is made of a first material having a first thermal conductivity, and said inward-facing surface facing the chamber absorbs and distributes heat generated within the substrate processing chamber; wherein said outer layer is made of a second material having a second thermal conductivity lower than said first thermal conductivity; wherein said intermediate layer is made of a third material having a third thermal conductivity lower than said first thermal conductivity and thermally insulating said outer layer from said inner layer. The sidewall assembly.

3. The sidewall assembly according to claim 2, wherein said inner layer is made of aluminum.

4. The sidewall assembly according to claim 3, wherein said outer layer is made of aluminum.

5. The sidewall assembly according to claim 3, wherein said outer layer is made of a polymer.

6. The sidewall assembly according to claim 1, wherein said intermediate layer is made of a discontinuous heat-trapping structure.

7. The sidewall assembly according to claim 6, wherein said discontinuous heat-trapping structure defines a plurality of interconnected cells within said intermediate layer.

8. The sidewall assembly according to claim 7, wherein said heat-trapping structure is composed of one of a honeycomb structure, a structurally expanded metal, a lattice structure, or a porous structure.

9. The sidewall assembly according to claim 7, wherein said heat-trapping structure is a honeycomb structure composed of one or more of a synthetic polymer or a synthetic copolymer.

10. The sidewall assembly according to claim 9, wherein said honeycomb structure is composed of one or more of aramid, cellulose fiber, rayon, and modacrylic.

11. The sidewall assembly according to claim 7, A sidewall assembly in which a vacuum is formed within a plurality of interconnected cells of the intermediate layer.

12. The sidewall assembly according to claim 1, wherein at least one of the inward facing surface of the outer layer and the outward facing surface of the inner layer comprises a super-reflective infrared coating.

13. The sidewall assembly according to claim 12, wherein the coating is a barium sulfate coating.

14. The sidewall assembly according to claim 1, further comprising an adhesive film, the adhesive film being (i) between the inner layer and the intermediate layer, (ii) between the intermediate layer and the outer layer, or (iii) between the inner layer and the intermediate layer and between the intermediate layer and the outer layer disposed therebetween.

15. The sidewall assembly according to claim 1, further comprising at least one of the bottom wall and the top wall of the substrate processing chamber.

16. A processing chamber for a substrate processing system, having a composite structure, the composite structure comprising a sidewall assembly surrounding a reactor volume portion, and a pedestal disposed within the reactor volume portion, the pedestal comprising a heating element for heating a substrate supported thereon, wherein the sidewall assembly comprises an inner layer having an inward facing surface facing the reactor volume portion for absorbing and distributing heat generated within the reactor volume portion, an outer layer surrounding the inner layer and defining a gap between the inner layer and the outer layer, an intermediate layer disposed around the inner layer in the gap defined between the inner layer and the outer layer and comprising a discontinuous heat trapping structure for thermally insulating the outer layer from the inner layer, and the processing chamber.

17. The processing chamber according to claim 16, wherein the inner layer is made of aluminum, the outer layer is made of one of a polymer and aluminum, and the intermediate layer is composed of a honeycomb structure defining a plurality of interconnected cells within the intermediate layer.

18. The processing chamber according to claim 17, wherein the honeycomb structure is composed of one or more of aramid, cellulose fiber, rayon, and modacrylic.

19. The processing chamber according to claim 17, A processing chamber in which the honeycomb structure is composed of expanded metal.

20. The processing chamber according to claim 17, A processing chamber in which a vacuum is formed in the gap.

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