Display device, display panel, and method for manufacturing the same

Abstract

The present invention provides a display device, a display panel, and a method for manufacturing the same. The display panel includes a substrate and a plurality of light-emitting units provided on the substrate. Each light-emitting unit includes a stacked first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a second electrode. The first electrode is located on a side of the second electrode away from the substrate, and the plurality of light-emitting units share one first electrode. The present invention can improve display resolution.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and more particularly to a display device, a display panel, and a method for manufacturing the same.

Background Art

[0002] With the development of science and technology, display technology has attracted more and more attention. Conventional display devices have the problem of low display resolution.

Summary of the Invention

Problems to be Solved by the Invention

[0003] An object of the present invention is to provide a display device, a display panel, and a method for manufacturing the same that can improve display resolution.

Means for Solving the Problems

[0004] According to one aspect of the present invention, a substrate, a plurality of light-emitting units provided on the substrate, a display panel including: each of the light-emitting units includes a stacked first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a second electrode, the first electrode is located on a side of the second electrode away from the substrate, and the plurality of light-emitting units share one of the first electrodes. A display panel is provided.

[0005] Furthermore, the display panel further includes an isolation structure, at least a part of the isolation structure is located between two adjacent light-emitting units, and in the thickness direction of the substrate, a surface of the isolation structure away from the substrate is higher than a surface of the light-emitting layer away from the substrate.

[0006] Furthermore, the isolation structure is provided on the substrate, includes a plurality of openings, the plurality of light-emitting units are provided in a one-to-one correspondence with the plurality of openings, and the first electrode is provided on the side of the isolation structure away from the substrate.

[0007] Furthermore, the first semiconductor layers of the plurality of light-emitting units are provided in the same layer and have an integrated structure, and the first semiconductor layer is provided on the surface of the isolation structure away from the substrate.

[0008] Furthermore, the refractive index of the isolation structure is the same as the refractive index of the first semiconductor layer.

[0009] Furthermore, there is a spacing region between the portions other than the first electrodes of two adjacent light-emitting units, a recess is formed in the portion of the first electrode corresponding to the spacing region, the isolation structure is provided on the side of the first electrode away from the substrate and is located in the recess.

[0010] Furthermore, the isolation structure includes a reflective material.

[0011] Furthermore, the second electrode is bonded to the substrate via a metal bonding layer.

[0012] Furthermore, the display panel further includes a light extraction structure located on the light emission side of the light-emitting layer.

[0013] The surface of the first electrode away from the substrate is a rough surface that constitutes the light extraction structure, or, The surface of the first semiconductor layer away from the second semiconductor layer is a rough surface that constitutes the light extraction structure.

[0014] Furthermore, the display panel further includes a light condensing unit provided in the region of the first electrode corresponding to the light-emitting layer.

[0015] Furthermore, the surface of the light collecting unit away from the first electrode is a curved surface, and the surface of the light collecting unit away from the first electrode protrudes in a direction away from the substrate.

[0016] Furthermore, the first semiconductor layer includes a common film layer and a plurality of protrusions, and the plurality of protrusions are provided in a one-to-one correspondence with the surfaces of the light emitting layers of the plurality of light emitting units away from the second semiconductor layer, and the common film layer is provided on the side of the plurality of protrusions away from the second semiconductor layer.

[0017] Furthermore, the ratio of the thickness of the protrusion to the thickness of the common film layer is 1 / 4 to 1 / 2.

[0018] Furthermore, the display panel further includes a metal grid provided on the side of the first electrode away from the substrate and connected to the first electrode, The orthographic projection of the light emitting layer on the substrate is located within the region of the orthographic projection of the hole of the metal grid on the substrate.

[0019] Furthermore, the display panel includes a display area and a peripheral area surrounding the display area, and the plurality of light emitting units are located in the display area, further includes connection lead lines provided on the substrate and located in the peripheral area, and the metal grid is electrically connected to the connection lead lines.

[0020] Furthermore, the substrate is a silicon-based substrate.

[0021] According to one aspect of the present invention, a step of providing a substrate, a step of forming a plurality of light emitting units on the substrate, which is a method for manufacturing a display panel, Each of the light-emitting units includes a stacked first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a second electrode. The first electrode is located on the side away from the substrate of the second electrode. A plurality of the light-emitting units share one of the first electrodes. A method for manufacturing a display panel is provided.

[0022] Furthermore, the manufacturing method further includes a step of forming an isolation structure, at least a partial region of the isolation structure is located between two adjacent light-emitting units, and in the thickness direction of the substrate, the surface of the isolation structure away from the substrate is higher than the surface of the light-emitting layer away from the substrate.

[0023] Furthermore, the isolation structure is provided on the substrate and includes a plurality of openings. A plurality of the light-emitting units are provided in a one-to-one correspondence with the plurality of openings. The first electrode is formed on the side away from the substrate of the isolation structure.

[0024] Furthermore, the step of forming a plurality of light-emitting units on the substrate includes a step of sequentially forming a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on a support plate; a step of forming a first etching trench and a plurality of first holding units provided at intervals by a patterning process. The first etching trench surrounds the first holding units, and the distance between the bottom surface of the first etching trench and the support plate is less than or equal to the thickness of the first semiconductor layer. a step of bonding the first holding units and the substrate via a metal bonding layer constituting the second electrode and removing the support plate; a step of forming a first electrode.

[0025] Furthermore, the distance between the bottom surface of the first etching trench and the support plate is greater than zero and less than the thickness of the first semiconductor layer. The first semiconductor layer includes a common film layer and a plurality of protrusions. The plurality of protrusions are provided in a one-to-one correspondence with the surfaces of the light-emitting layers of the plurality of light-emitting units that are away from the second semiconductor layer. The common film layer is provided on the side of the plurality of protrusions that is away from the second semiconductor layer.

[0026] Furthermore, the step of forming a plurality of light-emitting units on the substrate includes: sequentially forming a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on a support plate; bonding the second semiconductor layer and the substrate through a metal bonding layer that constitutes the second electrode; removing the support plate and forming, through a patterning process, a second etching trench and a plurality of second holding units provided at intervals therebetween, wherein the second etching trench surrounds the second holding units and the bottom surface of the second etching trench is the substrate; forming a first electrode.

[0027] According to an aspect of the present invention, a display device including the foregoing display panel is provided.

Effects of the Invention

[0028] In the display device, display panel, and manufacturing method thereof of the present invention, the light-emitting unit includes a stacked first electrode, first semiconductor layer, light-emitting layer, second semiconductor layer, and second electrode, that is, the light-emitting unit has a vertical structure, and the number of light-emitting units on the substrate can be increased, so that the display resolution of the display panel is improved. Also, since a plurality of light-emitting units share one first electrode, the manufacturing process can be simplified.

Brief Description of the Drawings

[0029]

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Embodiments for Carrying Out the Invention

[0030] Exemplary embodiments will now be described in detail, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, unless otherwise specified, the same numbers in different drawings denote the same or similar elements. It should be noted that the embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. On the contrary, they are merely examples of devices consistent with some aspects of the present invention detailed in the appended claims.

[0031] The terms used in the present invention are for the purpose of describing particular embodiments only and are not intended to limit the present invention. Unless otherwise defined, technical terms or scientific terms used in the present invention have the ordinary meanings understood by those skilled in the art to which the present invention pertains. The terms "first", "second" and similar terms used in the specification and claims of the present invention do not indicate any order, number or importance, but are for distinguishing different components. Similarly, similar terms such as "one" or "a" do not represent a limitation on the number, but represent the presence of at least one. "Plurality" or "some" represents two or more. Unless otherwise specified, similar terms such as "front part", "rear part", "lower part" and / or "upper part" are used only for the purpose of explanation and are not limited to one position or one spatial direction. With regard to similar terms such as "comprising" or "having", it means that the elements or objects after "comprising" or "having" include the elements or objects listed before "comprising" or "having" and their equivalents, and do not exclude other elements or objects. Similar terms such as "connected" or "coupled" are not limited to physical or mechanical connections and may include electrical connections whether direct or indirect. The singular forms "a kind", "the" and "said" used in the specification and appended claims of the present invention are also intended to include the plural form unless the context clearly indicates otherwise. The term "and / or" used herein refers to any or all possible combinations of one or more of the related listed items and should be understood to include them.

[0032] Embodiments of the present invention provide a display panel. As shown in FIGS. 7, 13, 15, and 16, the display panel may include a substrate 1 and a plurality of light-emitting units 2.

[0033] The plurality of light-emitting units 2 are provided on the substrate 1. The light-emitting unit 2 includes a stacked first electrode 201, a first semiconductor layer 202, a light-emitting layer 203, a second semiconductor layer 204, and a second electrode 205. The first electrode 201 is located on the side of the second electrode 205 away from the substrate 1. The plurality of light-emitting units 2 share one first electrode 201.

[0034] In the display panel according to the embodiments of the present invention, the light-emitting unit 2 includes a stacked first electrode 201, a first semiconductor layer 202, a light-emitting layer 203, a second semiconductor layer 204, and a second electrode 205, that is, the light-emitting unit 2 has a vertical structure. Compared with the light-emitting unit with a horizontal structure, in the present invention, the number of light-emitting units 2 on the substrate 1 can be increased, so that the display resolution of the display panel can be improved. In addition, since the plurality of light-emitting units 2 share one first electrode 201, the manufacturing process can be simplified.

[0035] Hereinafter, each part of the display panel according to the embodiments of the present invention will be described in detail.

[0036] The substrate 1 may be a glass substrate, or of course, a polyimide substrate. In other embodiments, the substrate 1 may be a silicon-based substrate, thereby improving the heat conduction performance and electrical conductivity of the substrate 1, facilitating the manufacture of a plurality of subsequent film layers, and reducing the cost of the silicon-based substrate, and the manufacturing cost can also be reduced. A pixel driving circuit may be provided on the substrate 1. The pixel driving circuit may include a driving transistor and a switching transistor connected to the driving transistor. The switching transistor may be a complementary metal oxide semiconductor transistor, i.e., a CMOS (Complementary Metal Oxide Semiconductor) transistor. The display panel may include a display area 100 and a peripheral area 200 surrounding the display area 100 (see FIG. 14). The pixel driving circuit may be located in the display area 100. Further, a connection structure 101 is provided on the surface of the substrate 1. The connection structure 101 is electrically connected to the source or drain of the driving transistor.

[0037] The light-emitting unit 2 may be located in the display area 100 (see FIG. 14). The light-emitting unit 2 may be a light-emitting diode or the like. The light-emitting unit 2 includes a stacked first electrode 201, a first semiconductor layer 202, a light-emitting layer 203, a second semiconductor layer 204, and a second electrode 205. The first electrode 201 is located on the side away from the substrate 1 of the second electrode 205. The second electrode 205 may be bonded to the substrate 1 such that the second electrode 205 is electrically connected to the connection structure 101 and the second electrode 205 is electrically connected to the source or drain of the driving transistor. Here, the second electrode 205 is bonded to the substrate 1 via a metal bonding layer. The conductivity type of the first semiconductor layer 202 may be different from that of the second semiconductor layer 204. For example, the first semiconductor layer 202 is an n-type semiconductor layer and the second semiconductor layer 204 is a p-type semiconductor layer. Further, for example, the first semiconductor layer 202 is a p-type semiconductor layer and the second semiconductor layer 204 is an n-type semiconductor layer. Here, both the first semiconductor layer 202 and the second semiconductor layer 204 may contain GaN. The light-emitting layer 203 may be a quantum well layer. In one embodiment, the first electrode 201 is a cathode and the second electrode 205 is an anode. In another embodiment, the first electrode 201 is an anode and the second electrode 205 is a cathode.

[0038] As shown in FIG. 7, the second electrodes 205 of the plurality of light-emitting units 2 may be provided at intervals. The second semiconductor layers 204 of the plurality of light-emitting units 2 may be provided at intervals. The light-emitting layers 203 of the plurality of light-emitting units 2 may be provided at intervals. The first semiconductor layers 202 of the plurality of light-emitting units 2 may be provided at intervals (see FIG. 13). Of course, the first semiconductor layers 202 of the plurality of light-emitting units 2 are provided in the same layer and have an integral structure (see FIG. 7), that is, the light-emitting layers 203 of the plurality of light-emitting units 2 are connected to the same first semiconductor layer 202, whereby after the power is turned on, the uniformity of the current flowing through the first semiconductor layer 202 of the plurality of light-emitting units 2 can be improved, and thus the uniformity of the light emission of the plurality of light-emitting units 2 can be improved. The plurality of light-emitting units 2 may share one first electrode 201, that is, the first electrodes 201 of the plurality of light-emitting units 2 are provided in the same layer and have an integral structure.

[0039] Taking as an example that the first semiconductor layers 202 of the plurality of light-emitting units 2 are provided in the same layer and have an integral structure, as shown in FIG. 5, the first semiconductor layer 202 may include a common film layer 2021 and a plurality of protrusions 2022. The plurality of protrusions 2022 are provided in a one-to-one correspondence on the surface of the plurality of light-emitting layers 203 away from the second semiconductor layer 204, and the common film layer 2021 is provided on the side of the plurality of protrusions 2022 away from the second semiconductor layer 204. The ratio of the thickness L2 of the protrusion 2022 to the thickness L1 of the common film layer 2021 may be 1 / 4 to 1 / 2. The orthographic projection of any one of the light-emitting layer 203, the second semiconductor layer 204, and the second electrode 205 on the substrate 1 has the same shape as and completely overlaps with the orthographic projection of the protrusion 2022 on the substrate 1. The shape of the orthographic projection of the light-emitting layer 203 on the substrate 1 may be a square, a rectangle, a circle, or the like. Taking as an example that the shape of the orthographic projection of the light-emitting layer 203 on the substrate 1 is a square, the side length thereof may be 5 μm or the like.

[0040] As shown in FIG. 7, the display panel of the present invention may further include an isolation structure 3. The isolation structure 3 and the light-emitting unit 2 may be located on the same side of the substrate 1. At least a part of the region of the isolation structure 3 is located between two adjacent light-emitting units 2. Here, the isolation structure 3 may surround each light-emitting unit 2 so as to isolate any two adjacent light-emitting units 2. In the thickness direction of the substrate 1, the surface of the isolation structure 3 away from the substrate 1 is higher than the surface of the light-emitting layer 203 away from the substrate 1, that is, the surface of the isolation structure 3 away from the substrate 1 is located on the side away from the substrate 1 of the light-emitting layer 203. Thereby, the crosstalk of light between two adjacent light-emitting layers 203 can be reduced by the isolation structure 3.

[0041] In an embodiment of the present invention, as shown in FIG. 7, the isolation structure 3 is provided on the substrate 1 and may include a plurality of openings. The plurality of light-emitting units 2 are provided in a one-to-one correspondence with the plurality of openings. The first electrode 201 common to the plurality of light-emitting units 2 may be provided on the side of the isolation structure 3 away from the substrate 1. Further, taking the example that the plurality of light-emitting units 2 share one first semiconductor layer 202, the first semiconductor layer 202 may be provided on the surface of the isolation structure 3 away from the substrate 1. Here, the isolation structure 3 may be a transparent colloidal material, and the refractive index of the isolation structure 3 may be different from the refractive index of the first semiconductor layer 202. Of course, the refractive index of the isolation structure 3 may be the same as the refractive index of the first semiconductor layer 202. Thereby, the light loss caused by the refractive index of the isolation structure 3 being different from the refractive index of the first semiconductor layer 202 can be reduced. Taking the example that the refractive index of the isolation structure 3 is the same as the refractive index of the first semiconductor layer 202, the refractive index of the isolation structure 3 may be 2 or more. Of course, the isolation structure 3 may further include a reflective material, that is, the isolation structure 3 is a reflective structure for reflecting the light rays incident on the isolation structure 3. Here, the reflective material included in the isolation structure 3 may have a reflectivity greater than 60%. The reflective material may be an epoxy resin-based material such as a white adhesive.

[0042] In other embodiments of the present invention, as shown in FIGS. 15 and 16, the first semiconductor layers 202 of the plurality of light-emitting units 2 may be provided at intervals, the light-emitting layers 203 of the plurality of light-emitting units 2 may be provided at intervals, the second semiconductor layers 204 of the plurality of light-emitting units 2 may be provided at intervals, and the second electrodes 205 of the plurality of light-emitting units 2 may be provided at intervals. That is, there is an interval region between portions other than the first electrodes 201 of two adjacent light-emitting units 2, and the first electrode 201 may extend into the interval region. As a result, a recess is formed in a portion corresponding to the interval region of the first electrode 201, and the isolation structure 3 may be provided on the side of the first electrode 201 away from the substrate 1 and may be located in the recess. The isolation structure 3 may further include a reflective material such as a white adhesive, that is, the isolation structure 3 is a reflective structure for reflecting light rays incident on the isolation structure 3.

[0043] As shown in FIG. 15, the display panel according to the embodiment of the present invention may further include a light extraction structure 7. The light extraction structure 7 may be located on the light-emitting side of the light-emitting layer 203. The surface of the first electrode 201 away from the substrate 1 may be a rough surface 6, and the rough surface 6 may constitute the light extraction structure 7. Thereby, the total reflection phenomenon of light generated when the light rays emitted from the light-emitting layer 203 reach the rough surface 6 can be reduced, and the problem of the decrease in the light extraction efficiency due to the total reflection of light can be solved. Here, the region corresponding to the light-emitting layer 203 on the surface of the first electrode 201 away from the substrate 1 may be the rough surface 6, but is not limited thereto, and the entire region of the surface of the first electrode 201 away from the substrate 1 may be the rough surface 6. As shown in FIGS. 6 and 7, the surface of the first semiconductor layer 202 away from the second semiconductor layer 204 may be a rough surface 6, and the rough surface 6 may constitute the light extraction structure 7. Thereby, the total reflection phenomenon of light generated when the light rays emitted from the light-emitting layer 203 reach the rough surface 6 can be reduced, and the problem of the decrease in the light extraction efficiency due to the total reflection of light can be solved. Here, the region corresponding to the light-emitting layer 203 on the surface of the first semiconductor layer 202 away from the second semiconductor layer 204 may be the rough surface 6, but is not limited thereto, and the entire region of the surface of the first semiconductor layer 202 away from the second semiconductor layer 204 may be the rough surface 6.

[0044] As shown in FIG. 16, the display panel according to the embodiment of the present invention may further include a light condensing unit 10. The light condensing unit 10 may be provided in a region corresponding to the light emitting layer 203 of the first electrode 201, and the light condensing unit 10 is used to condense the light emitted from the light emitting layer 203. Here, the surface of the light condensing unit 10 facing the first electrode 201 may be adhered to the first electrode 201. The surface of the light condensing unit 10 away from the first electrode 201 is a curved surface, and the surface of the light condensing unit 10 away from the first electrode 201 protrudes in a direction away from the substrate 1. The boundary of the surface of the light condensing unit 10 facing the first electrode 201 may be connected to the boundary of the surface of the light condensing unit 10 away from the first electrode 201. The shape of the orthographic projection of the light condensing unit 10 on the substrate 1 may be circular, and its diameter may be 5 μm or the like. Taking the example that the shape of the orthographic projection of the light emitting layer 203 on the substrate 1 is square, the diameter of the circular orthographic projection of the light condensing unit 10 on the substrate 1 may be the same as the side length of the orthographic projection of the light emitting layer 203. In the thickness direction of the substrate 1, the maximum thickness L3 of the light condensing unit 10 is 2.5 μm or the like.

[0045] As shown in FIGS. 7, 13, and 14, the display panel according to the embodiment of the present invention may further include a metal grid 4. The metal grid 4 may be provided on the surface of the first electrode 201 away from the substrate 1, that is, the metal grid 4 is connected to the first electrode 201. The orthographic projection of the light-emitting layer 203 on the substrate 1 is located within the region of the orthographic projection of the holes of the metal grid 4 on the substrate 1, that is, the orthographic projection of the grid lines of the metal grid 4 on the substrate 1 and the orthographic projection of the light-emitting layer 203 on the substrate 1 are provided at intervals. Thereby, the resistance of the first electrode 201 is reduced, and the voltage drop (IR drop) in the first electrode 201 is reduced. At the same time, since the orthographic projection of the metal grid 4 on the substrate 1 surrounds the orthographic projection of the plurality of light-emitting layers 203 on the substrate 1, the light shielding of the light emitted from the light-emitting layer 203 by the metal grid 4 can be reduced. Here, the metal grid 4 has a low resistivity. The display panel according to the embodiment of the present invention may further include a connection lead wire 8. The connection lead wire 8 may be provided on the substrate 1 and may be located in the peripheral region 200 of the display panel. The connection lead wire 8 may extend along the periphery of the display region 100 so as to surround the display region 100, that is, the connection lead wire 8 is in a ring shape. The metal grid 4 may be electrically connected to the connection lead wire 8. Taking the case where the first electrode 201 is a cathode as an example, the connection lead wire 8 may be a cathode ring.

[0046] The present invention further provides a method for manufacturing a display panel for manufacturing the display panel described in any of the above embodiments. The method for manufacturing the display panel may include steps S100 to S110.

[0047] In step S100, as shown in FIG. 1, a substrate 1 is provided.

[0048] In step S110, as shown in FIGS. 7 and 13, a plurality of light-emitting units 2 are formed on the substrate 1. The light-emitting unit 2 includes a stacked first electrode 201, a first semiconductor layer 202, a light-emitting layer 203, a second semiconductor layer 204, and a second electrode 205. The first electrode 201 is located on the side of the second electrode 205 away from the substrate 1, and the plurality of light-emitting units 2 share one first electrode 201.

[0049] The display panel manufactured by the manufacturing method of the display panel of the present invention is the same as the display panel in the above embodiment of the display panel, so it has the same beneficial effects, and the description of the present invention is omitted here.

[0050] In one embodiment of the present invention, the above step S110 may include steps S1101A to S1104A.

[0051] In step S1101A, as shown in FIG. 2, the first semiconductor layer 202, the light-emitting layer 203, and the second semiconductor layer 204 are sequentially formed on the support plate 5.

[0052] In the present invention, the first semiconductor layer 202, the light-emitting layer 203, and the second semiconductor layer 204 may be sequentially formed on the support plate 5 by an epitaxial growth process. The material of the support plate 5 may be Si, but the present invention is not limited thereto.

[0053] In step S1102A, as shown in FIG. 3, a first etching trench 11 and a plurality of first holding units 12 provided at intervals are formed by a patterning process. The first etching trench 11 surrounds the first holding unit 12.

[0054] The patterning process may be a photolithography process or the like. The distance between the bottom surface of the first etching trench 11 and the support plate 5 may be equal to the thickness of the first semiconductor layer 202, that is, the sum of the thickness of the light-emitting layer 203 and the thickness of the second semiconductor layer 204 is equal to the depth of the first etching trench 11. Of course, the distance between the bottom surface of the first etching trench 11 and the support plate 5 may be greater than zero and less than the thickness of the first semiconductor layer 202. That is, in the present invention, by performing over-etching on the light-emitting layer 203 formed in step S1101A, it is ensured that the light-emitting layer 203 is completely etched in the thickness direction of the support plate 5, and the etching process can be simplified. In another embodiment of the present invention, the bottom surface of the first etching trench 11 may be the support plate 5. Taking the example that the distance between the bottom surface of the first etching trench 11 and the support plate 5 is greater than zero and less than or equal to the thickness of the first semiconductor layer 202, a plurality of first holding units 12 are provided at intervals, and the first etching trench 11 surrounds the first holding units 12, that is, each first holding unit 12 holds a part of the second semiconductor layer 204 and a part of the light-emitting layer 203. The first semiconductor layer 202 may include a common film layer 2021 and a plurality of protrusions 2022. The plurality of protrusions 2022 are provided in a one-to-one correspondence with the surfaces of the plurality of light-emitting layers 203 away from the second semiconductor layer 204, and the common film layer 2021 is provided on the side of the plurality of protrusions 2022 away from the second semiconductor layer 204. The ratio of the thickness L2 of the protrusion 2022 to the thickness L1 of the common film layer 2021 is 1 / 4 to 1 / 2.

[0055] The orthographic projection of the first holding unit 12 on the support plate 5 may be a square, a rectangle, a circle, or the like. Taking the example that the orthographic projection of the first holding unit 12 is a square, the side length of the square may be 5 μm or the like. Also, the plurality of first holding units 12 provided at intervals may be distributed in an array.

[0056] In step S1103A, as shown in FIG. 4, the first holding unit 12 and the substrate 1 are joined via a metal bonding layer 15 that constitutes the second electrode 205, and the support plate 5 is removed.

[0057] Specifically, step S1103A may include forming a first bonding layer on the surface of the first holding unit 12, forming a second bonding layer on the substrate 1, joining the first bonding layer and the second bonding layer, and the joined first bonding layer and second bonding layer constituting the metal bonding layer 15. Here, the bonding process may employ eutectic bonding, and of course, thermocompression bonding may also be employed. In the eutectic bonding process, both the first bonding layer and the second bonding layer may have a bimetallic layer structure such as Cu / Sn, Au / In, etc. In the thermocompression bonding process, both the first bonding layer and the second bonding layer may have a monometallic layer structure such as Au, Cu, Al, etc.

[0058] In step S1104A, as shown in FIG. 7, the first electrode 201 is formed.

[0059] The first electrode 201 may be formed by evaporation.

[0060] In another embodiment of the present invention, step S110 may include steps S1101B to S1104B.

[0061] In step S1101B, as shown in FIG. 2, a first semiconductor layer 202, a light-emitting layer 203, and a second semiconductor layer 204 are sequentially formed on the support plate 5.

[0062] In the present invention, the first semiconductor layer 202, the light-emitting layer 203, and the second semiconductor layer 204 may be sequentially formed on the support plate 5 by an epitaxial growth process. The material of the support plate 5 may be Si, but the present invention is not limited thereto. The conductivity type of the first semiconductor layer 202 may be different from that of the second semiconductor layer 204. For example, the first semiconductor layer 202 is an n-type semiconductor layer and the second semiconductor layer 204 is a p-type semiconductor layer. Further, for example, the first semiconductor layer 202 is a p-type semiconductor layer and the second semiconductor layer 204 is an n-type semiconductor layer. Here, both the first semiconductor layer 202 and the second semiconductor layer 204 may contain GaN. The light-emitting layer 203 may be a quantum well layer.

[0063] In step S1102B, as shown in FIG. 8, the second semiconductor layer 204 and the substrate 1 are bonded via the metal bonding layer 15 that constitutes the second electrode 205.

[0064] Specifically, step S1102B may include forming a first bonding layer on the surface of the second semiconductor layer 204, forming a second bonding layer on the substrate 1, bonding the first bonding layer and the second bonding layer, and the bonded first bonding layer and second bonding layer constituting the metal bonding layer 15. Both the first bonding layer and the second bonding layer may have a bimetal layer structure such as Cu / Sn or Au / In. In step S1102B, the bonding strength can be improved by covering the entire surface region of the second semiconductor layer 204 with the first bonding layer and covering the entire surface region of the substrate 1 with the second bonding layer.

[0065] In step S1103B, as shown in FIG. 9, the support plate 5 is removed, and a second etching trench 13 and a plurality of second holding units 14 provided at intervals are formed by a patterning process. The second etching trench 13 surrounds the second holding unit 14, and the bottom surface of the second etching trench 13 is the substrate 1.

[0066] Taking the material of the support plate 5 being Si as an example, in the present invention, the support plate 5 may be removed by an acidic etching solution such as HF (Hydrogen Fluoride). The patterning process may be a photolithography process or the like. The bottom surface of the second etching trench 13 may be the substrate 1, that is, the sum of the thickness of the first semiconductor layer 202, the thickness of the light-emitting layer 203, the thickness of the second semiconductor layer 204, and the thickness of the metal bonding layer 15 is equal to the depth of the second etching trench 13. The plurality of second holding units 14 are provided at intervals, and the second etching trench 13 surrounds the second holding units 14, that is, each of the second holding units 14 holds a part of the first semiconductor layer 202, a part of the second semiconductor layer 204, a part of the light-emitting layer 203, and a part of the second electrode 205.

[0067] As shown in FIG. 10, the orthographic projection of the second holding unit 14 on the substrate 1 may be a square, a rectangle, a circle, or the like. Taking the orthographic projection of the second holding unit 14 being a square as an example, the side length of the square may be 5 μm or the like. Also, the plurality of second holding units 14 provided at intervals may be distributed in an array. After step S1103B, the present invention may further include step S1104B of forming the first electrode 201 as shown in FIG. 13.

[0068] The manufacturing method of the display panel of the present invention may further include the step of forming the above isolation structure 3. Taking the example that the isolation structure 3 is located between the substrate 1 and the first electrode 201, as shown in FIG. 6, the isolation structure 3 may be formed after the above step S1103A and before the above step S1104A. Of course, as shown in FIG. 12, the isolation structure 3 may be formed after step S1103B and before step S1104B. Taking the example that the above isolation structure 3 is located on the side of the first electrode 201 away from the substrate 1 as shown in FIGS. 15 and 16, the isolation structure 3 may be formed after the first electrode 201 is formed. In addition, in FIGS. 15 and 16, before forming the first electrode 201, an insulating layer 9 may be formed first. The insulating layer 9 covers the side surfaces of the first semiconductor layer 202, the light-emitting layer 203, the second semiconductor layer 204, and the second electrode 205, and is provided with a window exposing the upper surface of the first semiconductor layer 202. The first electrode 201 is in contact with the first semiconductor layer 202 through the window.

[0069] The manufacturing method of the display panel of the present invention may further include the step of forming the above light extraction structure 7. Taking the example that the first semiconductor layer 202 has the above rough surface 6, as shown in FIGS. 5 and 11, the present invention may roughen the surface of the first semiconductor layer 202 with an alkaline solution to form the rough surface 6 before forming the first electrode 201. Taking the example that the first electrode 201 has the above rough surface 6, as shown in FIG. 15, the present invention may pattern the surface of the first electrode 201 by a photolithography process to form the rough surface 6 after forming the first electrode 201.

[0070] After forming the first electrode 201, as shown in FIGS. 7 and 13, the manufacturing method of the display panel of the present invention may further include the step of forming the above metal grid 4 and connection lead wires 8.

[0071] After forming the first electrode 201, as shown in FIG. 16, the method for manufacturing a display panel of the present invention may further include the step of forming the light collecting unit 10. The light collecting unit 10 may be formed by dispensing adhesive.

[0072] Embodiments of the present invention further provide a display device. The display device may include the display panel described in any of the above embodiments. Since the display panel in the display device according to the embodiments of the present invention is the same as the display panel in the embodiments of the above display panel, it has the same beneficial effects, and the description thereof is omitted here.

[0073] The above are only preferred embodiments of the present invention, and do not limit the present invention in any form. Although the present invention has been disclosed as above in the preferred embodiments, it is not for limiting the present invention. Those skilled in the art can, without departing from the scope of the technical solutions of the present invention, use the above-disclosed technical content to make some changes or modifications to equivalent embodiments with equivalent changes, but any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solutions of the present invention still belong to the scope of the technical solutions of the present invention.

Explanation of Reference Numerals

[0074] 1 Substrate 101 Connection Structure 2 Light Emitting Unit 201 First Electrode 202 First Semiconductor Layer 2021 Common Film Layer 2022 Protrusion 203 Light Emitting Layer 204 Second Semiconductor Layer 205 Second Electrode 3 Isolation Structure 4 Metal Grid 5 Support Plate 6 Rough Surface 7 Light Extraction Structure 8 Connection lead wire 9 Insulation layer 10 Light collection unit 11 First etching trench 12 First holding unit 13 Second etching trench 14 Second holding unit 15 Metal bonding layer 100 Display area 200 Peripheral area

Claims

1. A display panel including a substrate and a plurality of light-emitting units provided on the substrate, wherein each of the light-emitting units includes a stacked first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a second electrode, the first electrode is located on a side of the second electrode away from the substrate, and the plurality of light-emitting units share one first electrode. A display panel characterized by the above.

2. Further including an isolation structure, wherein at least a part of the isolation structure is located between two adjacent light-emitting units, and in the thickness direction of the substrate, a surface of the isolation structure away from the substrate is higher than a surface of the light-emitting layer away from the substrate. The display panel according to claim 1, characterized by the above.

3. The isolation structure is provided on the substrate and includes a plurality of openings, the plurality of light-emitting units are provided in a one-to-one correspondence with the plurality of openings, and the first electrode is provided on a side of the isolation structure away from the substrate. The display panel according to claim 2, characterized by the above.

4. The first semiconductor layers of the plurality of light-emitting units are provided in the same layer and have an integral structure, and the first semiconductor layer is provided on a surface of the isolation structure away from the substrate. The display panel according to claim 3, characterized by the above.

5. The refractive index of the isolation structure is the same as the refractive index of the first semiconductor layer. The display panel according to claim 4, characterized by the above.

6. There is a spacing region between portions of two adjacent light-emitting units other than the first electrodes, a recess is formed in a portion of the first electrode corresponding to the spacing region, the isolation structure is provided on a side of the first electrode away from the substrate, and is located in the recess. The display panel according to claim 2, characterized by the above.

7. The isolation structure includes a reflective material. The display panel according to claim 2, characterized by the above.

8. The second electrode is bonded to the substrate via a metal bonding layer. The display panel according to claim 1, characterized by the above.

9. Further including a light extraction structure located on a light-emitting side of the light-emitting layer. The display panel according to claim 1, characterized by the above.

10. A surface of the first electrode away from the substrate is a rough surface constituting the light extraction structure, or a surface of the first semiconductor layer away from the second semiconductor layer is a rough surface constituting the light extraction structure. ​ The display panel according to claim 9, characterized in that...

11. Further comprising a light condensing unit provided in a region of the first electrode corresponding to the light emitting layer, The display panel according to claim 1, characterized in that...

12. The display panel according to claim 11, characterized in that a surface of the light condensing unit away from the first electrode is a curved surface, and the surface of the light condensing unit away from the first electrode protrudes in a direction away from the substrate.

13. The first semiconductor layer includes a common film layer and a plurality of protrusions, the plurality of protrusions are provided in a one-to-one correspondence with surfaces of the light emitting layers of the plurality of light emitting units away from the second semiconductor layer, and the common film layer is provided on a side of the plurality of protrusions away from the second semiconductor layer. The display panel according to claim 4, characterized in that...

14. The ratio of the thickness of the protrusion to the thickness of the common film layer is 1 / 4 to 1 / 2. The display panel according to claim 13, characterized in that...

15. Further comprising a metal grid provided on a side of the first electrode away from the substrate and connected to the first electrode, the metal grid includes a plurality of holes corresponding to the light emitting units one-to-one, A front projection of the light emitting layer on the substrate is located within a region of a front projection of the hole of the metal grid on the substrate. The display panel according to claim 1, characterized in that...

16. Including a display area and a peripheral area surrounding the display area, the plurality of light emitting units are located in the display area, Further comprising connection lead lines provided on the substrate and located in the peripheral area, and the metal grid is electrically connected to the connection lead lines. The display panel according to claim 15, characterized in that...

17. The substrate is a silicon-based substrate. The display panel according to claim 1, characterized in that...

18. A method for manufacturing a display panel, comprising the steps of providing a substrate and forming a plurality of light emitting units on the substrate, Each of the light emitting units includes a stacked first electrode, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a second electrode, the first electrode is located on a side of the second electrode away from the substrate, and the plurality of light emitting units share one first electrode. The method for manufacturing a display panel, characterized in that...

19. Further comprising the step of forming an isolation structure. ​ At least a part of the isolation structure is located between two adjacent light-emitting units, and in the thickness direction of the substrate, the surface of the isolation structure away from the substrate is higher than the surface of the light-emitting layer away from the substrate. The method for manufacturing a display panel according to claim 18, characterized in that.

20. The isolation structure is provided on the substrate and includes a plurality of openings, and the plurality of light-emitting units are provided in a one-to-one correspondence with the plurality of openings, and the first electrode is formed on the side of the isolation structure away from the substrate. The method for manufacturing a display panel according to claim 19, characterized in that.

21. The step of forming a plurality of light-emitting units on the substrate includes: sequentially forming a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on a support plate; forming a first etching trench and a plurality of first holding units provided at intervals by a patterning process, wherein the first etching trench surrounds the first holding units, and the distance between the bottom surface of the first etching trench and the support plate is less than or equal to the thickness of the first semiconductor layer; bonding the first holding units and the substrate via a metal bonding layer constituting the second electrode, and removing the support plate; forming a first electrode. The method for manufacturing a display panel according to claim 18, characterized in that.

22. The distance between the bottom surface of the first etching trench and the support plate is greater than zero and less than the thickness of the first semiconductor layer. The first semiconductor layer includes a common film layer and a plurality of protrusions, and the plurality of protrusions are provided in a one-to-one correspondence with the surfaces of the light-emitting layers of the plurality of light-emitting units away from the second semiconductor layer, and the common film layer is provided on the side of the plurality of protrusions away from the second semiconductor layer. The method for manufacturing a display panel according to claim 21, characterized in that.

23. The step of forming a plurality of light-emitting units on the substrate includes: sequentially forming a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on a support plate; bonding the second semiconductor layer and the substrate via a metal bonding layer constituting the second electrode. Removing the support plate and forming, by a patterning process, a second etching trench and a plurality of second holding units provided at intervals, wherein the second etching trench surrounds the second holding units and a bottom surface of the second etching trench is the substrate, and forming a first electrode, A method for manufacturing a display panel according to claim 18, characterized in that.

24. Including the display panel according to any one of claims 1 to 17, A display device characterized by that.

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