Curved Ion Mobility Architecture

Abstract

The curved ion manipulation device can provide a relatively long ion path length compared to conventional devices. Ions can be directed through one or more pairs of opposing curved surfaces of the curved ion manipulation structure. Each pair of opposing curved surfaces can be radially spaced with respect to a common longitudinal axis of the ion manipulation structure to define a radial gap. Each pair of opposing curved surfaces can include a first electrode arrangement and a second electrode arrangement opposing the first electrode arrangement. The first and second electrode arrangements can define an ion path and are configured to induce ions circumferentially along the ion path and through the radial gap of the ion manipulation structure.

Description

Technical Field

[0001] (Field) The present disclosure relates to ion manipulation devices.

Background Art

[0002] (Background) Ion manipulation techniques are increasingly being used in a myriad of applications ranging from detecting explosives to detecting biomarkers. The resolution of such techniques is largely determined by, and improved by, the total ion path length. However, problems remain in increasing the ion path length within practical applications.

[0003] (Acknowledgment of Government Support) This invention was made with government support under contract DE-AC05-76RL01830 awarded by the U.S. Department of Energy, and grant number GM130709 awarded by the National Institutes of Health. The government has certain rights in this invention.

Summary of the Invention

Means for Solving the Problems

[0004] In each example of the disclosed technology, an ion manipulation device can include an ion manipulation structure having one or more pairs of opposing curved surfaces that share a common longitudinal axis and are radially spaced from each other by a radial gap along the radius of the ion manipulation structure, wherein each pair of opposing curved surfaces has a first electrode arrangement and a second electrode arrangement that faces the first electrode arrangement. The first and second electrode arrangements are configured to define an ion path through the radial gap and to induce ions circumferentially along and through the radial gap along the ion path.

[0005] In some examples, the first electrode arrangement extends along one of a pair of curved surfaces, and the second electrode arrangement extends along the other of the pair of curved surfaces. In some examples, the ion path has a plurality of segments extending circumferentially and a plurality of segments extending longitudinally. In some examples, the segments extending circumferentially have a first length, the segments extending longitudinally have a second length, and the first length is longer than the second length. In other examples, the segments extending circumferentially have a first length, the segments extending longitudinally have a second length, and the first length is shorter than the second length.

[0006] In some examples, the ion manipulation structure includes a single coiled structure. In other examples, the ion manipulation structure includes a pair of coiled structures. In yet other examples, the ion manipulation structure includes a concentric cylindrical structure.

[0007] In each of another respective example of the disclosed technology, the ion manipulation device can include a series of radially curved surfaces disposed about a common longitudinal axis, adjacent pairs of the curved surfaces being spaced apart to define respective radial gaps, adjacent pairs of the curved surfaces each comprising a pair of opposing electrode arrangements, each pair of opposing electrode arrangements defining a respective ion path, and configured to direct ions circumferentially through and through respective ones of its radial gaps to another one of the radial gaps.

[0008] In some examples, the opposing electrode arrangements of one or more pairs of adjacent curved surfaces define an ion path such that it has a plurality of circumferentially extending segments and a plurality of longitudinally extending segments. In other examples, the opposing electrode arrangements of one or more pairs of adjacent curved surfaces define an ion path such that it forms a helical ion path. In some examples, each pair of adjacent curved surfaces is a pair of surfaces of a concentric structure. In some examples, the spacing between each pair of adjacent curved surfaces of the curved surfaces is the same. In further examples, the ion paths are connected so as to form a single continuous ion path. In other examples, the ion paths of two radial gaps are coupled to each other by an ion escalator configured to direct ions from one of the radial gaps to the other of the radial gaps.

[0009] In further examples, the ion manipulation device can further include a drift tube electrode arrangement configured to extend along a common longitudinal axis and direct ions from a first end of the drift tube electrode arrangement to a second end of the drift tube electrode arrangement. In such examples, one or more pairs of adjacent curved surfaces surround the drift tube electrode arrangement.

[0010] In each respective example of the disclosed technology, the method can include directing ions through one or more pairs of opposing curved surfaces of a curved ion manipulation structure. Each pair of opposing curved surfaces is radially spaced relative to a common longitudinal axis of the ion manipulation structure to define a radial gap, and each pair of opposing curved surfaces includes a first electrode arrangement and a second electrode arrangement opposing the first electrode arrangement. The first and second electrode arrangements are configured to define an ion path and direct ions circumferentially along the ion path and through the radial gap of the ion manipulation structure.

[0011] In some examples, the first and second electrode arrangements of one or more of the pairs of opposing curved surfaces define an ion path having a plurality of circumferentially extending segments and a plurality of longitudinally extending segments. In other examples, the first and second electrode arrangements of one or more of the pairs of opposing curved surfaces define a helical ion path.

[0012] In some respective method examples, the method further includes inducing ions through a drift tube electrode arrangement that extends along a common longitudinal axis and is surrounded by a pair of opposing curved surfaces, the drift tube electrode arrangement being configured to induce ions from a first end to a second end of the drift tube electrode arrangement.

[0013] In some examples, the pair of opposing curved surfaces is defined by a pair of respective concentric structures. In other examples, the pair of opposing curved surfaces forms a single coiled structure. In yet other examples, the pair of opposing curved surfaces forms a pair of coiled structures.

[0014] The foregoing as well as other objects, features and advantages of the disclosed technology will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

Brief Description of the Drawings

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Best Mode for Carrying Out the Invention

[0025] (Detailed Description) The disclosed technology is directed to devices, apparatuses, and methods for manipulating, separating, or transporting ions, including the use of an electric field, creating field-defined ion paths, traps, and conduits, and manipulating ions with minimal or no loss under a wide range of conditions, including in gases over a relatively long ion path length and over a variety of pressures.

[0026] The curved ion manipulation architectures described herein can be devices constructed from non-conductive or low-conductive materials that can be shaped into various curved configurations that extend longitudinally. These devices can be shaped to have one or more pairs of adjacent curved surfaces that are radially disposed along a common axis, with each pair of adjacent surfaces being spaced apart and defining respective radial gaps. The radial gaps can be enclosed or semi-enclosed volumes in which conductive electrodes are positioned and / or embedded along. The electrodes can be located on opposing curved surfaces that define each gap. The potentials provided to the electrodes can enable ion manipulation along an ion path defined along the curved surfaces and radial gaps of the device. The curved surfaces of the device can be formed into a cylindrical structure having one or more radial gaps from a flexible or semi-flexible substrate suitable for rolling the substrate into a roll, coiling it, and / or shaping it in other ways. Such a substrate can be a flexible printed circuit board or another suitable non-conductive or low-conductive material. Additionally, or alternatively, the ion manipulation devices described herein can be formed from an additive manufacturing process that can construct the device layer by layer into the desired roll, coil, concentric, and / or cylindrical configurations.

[0027] The opposing surfaces of a pair of adjacent curved surfaces of the device may include electrodes deposited, embedded, or otherwise positioned, in which a potential can be applied to provide ion confinement across the radial gap of the device over circumferential, longitudinal, and / or non-linear ion paths. Such an electrode array can be printed on a substrate, such as via photolithography, and / or printed via an additive manufacturing process, so as to embed the electrodes. The electrodes can be powered by an external power / voltage source or power supply, which can apply or provide various combinations of radio frequency (RF) and direct current (DC) (static or dynamic) potentials to the electrodes to confine or direct ions along the ion path. The potential can also operate to confine ions within a cross-section of the ion path, such as within the outer boundary of the path, with minimal to no ion loss. The combination of RF and DC electrodes can be in any arrangement, such that ions can remain within the cross-section of the ion manipulation device and the ion path, whether the ion path is linear or non-linear.

[0028] In some implementations, a complex sequence of ion separation, transport, routing, and trapping can occur in the volume of a radial gap defined by each pair of adjacent curved surfaces and opposing electrode arrangements. Ion confinement can be provided by a biased or unbiased RF electric field, which is generally applied such that the RF electric fields of adjacent RF electrodes are out of phase with each other to form a "pseudo-potential" or "effective potential" that inhibits ions from approaching the electrodes and respective surfaces. The RF electrodes are typically 180 degrees out of phase. Confinement generally refers to inhibiting or restricting ion motion or relative ion motion in one or more directions, or to procedures or devices related to achieving confinement. Vertical confinement can include inhibiting motion or relative motion along the axis of ion transport, such as an ion path. Vertical confinement can also occur in a surf-mode traveling wave, where ions continue to move vertically but cannot slip with respect to the traveling wave. Vertical confinement can also occur in devices such as an accumulator or trap. Lateral confinement can include inhibiting motion in a direction orthogonal to the axis of ion transport. In some configurations described herein, RF confinement or a DC guard potential or combination can be used to achieve lateral confinement. Surrounding the electrodes can confine ions that are drifting laterally or orthogonal to the ion propagation axis, for example, by providing a relatively high DC guard potential compared to other RF and / or DC potentials used. Lateral confinement can occur independently of vertical confinement.

[0029] Containment can be provided over a range of pressures (e.g., from less than about 0.001 torr to about 1000 torr) and over a useful, wide and adjustable range of mass-to-charge (m / z) related to ions. In some implementations, ions are manipulated for analysis through mass spectrometry or using a mass spectrometer over a useful m / z range, e.g., from m / z 20 to greater than about 20,000. In some configurations, the ion containment volume contains gas or reactants. The arrangement of the RF and traveling wave electrodes receives corresponding potentials that enable the creation of ion traps and / or conduits in the volume or gap between the electrode arrangements, such that lossless or substantially lossless storage and / or movement of ions of the same or different polarities can be achieved without the application of static or superimposed DC potentials. For example, lossless operation can include losses of less than 0.1%, 1%, 5% or 10% of the ions injected into the corresponding ion containment volume.

[0030] Traveling waves are typically created by dynamically applying a DC potential to a plurality of electrodes arranged in one or more sequences. A traveling wave electrode set can be formed by one or more sequences of traveling wave electrodes placed in series. Since the DC potential varies between adjacent electrodes of the traveling wave electrode sequence, the traveling wave can be formed at a speed based on the time-dependent change of the DC potential. The temporal change of the traveling wave shape can take any one or combination of shapes including square, sine wave, triangle, symmetric sawtooth or asymmetric sawtooth. Changing the characteristics of the traveling wave can affect and manipulate various motions of ions with different ion mobilities, including providing ion confinement, lossless transport and ion separation. One such characteristic is the traveling wave velocity, where ions with higher mobilities move with or surf the traveling wave, and ions with lower mobilities roll to enable ion separation and lag behind the traveling wave. Another such characteristic is the traveling wave amplitude, which can transport ions with lower ion mobilities with an increase in the corresponding traveling wave amplitude. The traveling wave amplitude is typically selected based on the ion mobility characteristics, and the desired ion manipulation is in the range above 0V, up to 30V, 50V, 80V, 100V or more. The traveling wave velocity is typically selected based on the ion mobility characteristics, and the desired ion manipulation is in the range lower than 5m / s, 20m / s, 50m / s, 100m / s, 200m / s, 500m / s or 1000m / s. The traveling wave frequency is typically selected between 10kHz and 200kHz.

[0031] Generally, a traveling wave includes at least one valley and at least one peak that are formed by a potential waveform and propagate along a channel. When used for ion mobility separation, the TW can be continuous or can extend over multiple periods, although this is not a requirement. In other examples, the TW can be a single period (or even half a period) of an oscillatory waveform. Multiple periods of the TW waveform can be regular or irregular, for example, a stuttering waveform or a burst waveform can be used in certain applications. When used for ion mobility separation, it may be desirable for the TW amplitude to be below a first threshold such that all target ion species can pass from one valley over to the next peak, and such a configuration is considered to be in separation mode. For some direction changes such as using an escalator configuration, it may be desirable for the TW amplitude to be above a second threshold such that the target ion species cannot pass over the peak, i.e., all target species experience vertical confinement within the TW and can be carried by the TW at the TW velocity. Such a configuration is considered to be in surf mode. The TW amplitude that distinguishes between separation mode and surf mode can depend on frequency, wavelength, propagation velocity, or ion species. Some embodiments can be configured such that the surf mode region is in surf mode for all target ion species and the separation mode region is in separation mode for all target species. For a given ion species, the transition between surf mode and separation mode can also be made by changing the TW frequency while the amplitude and wavelength are fixed. In such a configuration, the TW can operate in separation mode above a threshold frequency and in surf mode below the threshold frequency. TW excitation and devices are described, for example, in US2019 / 0004011A1, the content of which is incorporated herein by reference.

[0032] A detailed ion manipulation device provides a relatively long ion path length compared to a normal device. The cylindrical structure and ion path configuration can include a substantially longer electrode arrangement while maintaining, for example, the footprint of a relatively small and compact device. Such a compact system can be suitably implemented in various portable and compact applications required for various uses and environments without sacrificing the resolution of ion manipulation such as ion mobility separation.

[0033] Figures 1A - 1B depict a curved ion manipulation device 100 according to one example. In some examples, the device 100 can be formed from a single substrate 102 that forms the overall structure of the device. The device 100 can extend longitudinally from a first end 118 to a second end 120. The device 100 can have a spiral or coiled shape in which the substrate 102 defines a continuous or substantially continuous structure that spirals radially outward from the innermost region 104 of the device 100 to the outermost region 106. As shown in Figures 1A - 1B, the coiled shape of the device 100 can define a plurality of curved layers 108a - 108d positioned along the radius R1 of the device 100 and in the YZ plane. In a particular example, each of the curved layers 108a - 108d can be one of a series of curved layers arranged radially around a central or common longitudinal axis A1. Due to the spiral shape, the curved layers 108a - 108d can be arranged such that the radius of a given layer increases within a range of radii as the layer spirals outward to the next adjacent layer. Each of the curved layers 108a - 108d of the device 100 can include a portion of a first curved surface 110 and a portion of a second curved surface 112. The first and second curved surfaces 110, 112 can correspond to opposing surfaces of the substrate 102. When the substrate 102 is formed in a coiled shape, a portion of the first curved surface 110 can face radially outward and away from the common longitudinal axis A1, whereas a portion of the second curved surface 112 can face radially inward toward the common longitudinal axis A1.

[0034] The radial gap 114 extends between each pair of the radially adjacent curved layers 108a-108d and the curved surfaces 110, 112. The radial gap 114 can be defined by a space that extends between a first curved surface 110 of one of the curved layers 108a-108d and a second curved surface 112 of an adjacent curved layer 108a-108d (e.g., in FIGS. 1A-1B, a portion of the first curved surface 110 of the curved layer 108b and a portion of the second curved surface 112 of the curved layer 108c). Due to the coiled shape, the different curved layers 108a-108d can be smoothly connected to form a radial gap 114 such as a continuous coiled gap between two or more adjacent layers of the curved layers 108a-108d. At least the first electrode arrangement 111 can be patterned along the first curved surface 110 on one side of the radial gap 114, and the second electrode arrangement 113 facing the first electrode arrangement can be patterned along the curved surface 112 across the radial gap 114 (e.g., RF electrodes and / or traveling wave electrodes are only shown in a few numbers in FIG. 1B for clarity of the figure). The first and second electrode arrangements define an ion path 115 that extends through the radial gap 114 and at least a portion of the device 100. In many examples, the first and second electrode arrangements 111, 113 can be similar to each other across the radial gap 114. For example, the first and second electrode arrangements 111, 113 can be radially aligned with each other across the gap 114 such that the patterns of the first and second electrode arrangements 111, 113 across the gap 114 are mirror images of each other or provide a one-to-one correspondence. For example, the second electrode arrangement 113 can be placed radially outside the first electrode arrangement 111 and can have electrodes and / or electrode gaps that are relatively longer circumferentially than the opposing electrodes of the first electrode arrangement 111. The first and second electrode arrangements 111, 113 are configured for longitudinal and transverse ion confinement to guide and manipulate ions along at least a portion of the ion path 115 of the radial gap 114 for minimal to lossless ion mobility separation and the like.The electrode configuration can also be used for an ion trap. Within the spiral shape of device 100, the ion path 115 can extend continuously through the radial gap 114 between the innermost and outermost regions 104, 106 in various ways, as described further below. In each implementation, the radial distance between the opposing curved surfaces 110, 112 of the adjacent curved layers 108a - 108d across the radial gap 114 (e.g., between layers 108a, 108b) can have the same or substantially the same value S1 throughout the coiled shape of device 100. The equidistance with respect to the radial gap 114 can ensure that the ion path is consistently configured for ion confinement throughout device 100. Additional exemplary electrode configurations and ion paths are described further below.

[0035] In some implementations, the ion path 115 defined between the electrode arrangements 111, 113 and the curved shape of the device 100 by the radial gap 114 can have both linear and non-linear segments. Such segments can extend in the longitudinal and / or circumferential directions (e.g., FIGS. 6A - 7B). For example, the first and second electrode arrangements 111, 113, and the associated ion path 115 can have a longitudinal segment extending in the ±X direction parallel to a common axis A1, and a circumferential segment following the curvature of the first and second curved surfaces 110, 112 and the radial gap 114 (e.g., within the YZ plane). As ions travel through the device 100 along the ion path 115 and the radial gap 114, the ions can follow the entire circumferential path. This entire circumferential path is indicated by the arrow 116. The ions can be introduced, for example, in the innermost region 104 of the device 100 and guided along the ion path 115. As the ions travel through the device 100, the ions are guided through the longitudinal and circumferential segments of the ion path 115 and follow the entire circumferential path 116 in a counterclockwise direction towards the outermost region 106. In this way, the ions travel along the ion path 115 defined successively by the curved layers 108a - 108d. Although the entire circumferential path of the ions is described as being guided in the counterclockwise direction, it should be understood that the entire circumferential ion path 116 can be guided in the clockwise direction in the same manner in which it is described. Further, while the helical shape of the device 100 spirals inward in a clockwise direction, other examples can spiral inward in a counterclockwise direction.

[0036] The outermost region 106 in the above example can represent the ion exit of the device 100, and ions exit the device 100 to be received by another device such as a mass spectrometer, an ion analyzer, and / or another ion manipulation device. The innermost region 104 can similarly represent the ion entrance, and ions are introduced into the device 100 from another device such as an ion injector, an ion trap or other ion manipulation devices. However, in some implementations, the outermost region 106 can be the ion entrance and the innermost region 104 can be the ion exit. As will become apparent from the following description, the ion entrance and exit can be positioned to couple ions to, from, or within the radial gap 114 anywhere throughout the radial gap 114 and at the first end 118 or the second end 120 of the device 100. For example, ions can enter the device 100 through an entrance located in the radial gap 114 between the curved layers 108b, 108c at the first end 118 and exit through an ion exit located in the radial gap 114 between the curved layers 108c, 108d at the second end 120.

[0037] The substrate 102 can be constructed from a single flexible or semi-flexible material layer, or a set of layers (e.g., a flexible printed circuit board), which is then coiled, rolled up, or otherwise manipulated into the coiled shape shown in FIGS. 1A - 1B to form the ion manipulation device 100. The substrate 102 can, for example, initially be planar or otherwise non-coiled and can have first and second surfaces (e.g., first and second surfaces 110, 112). The electrode arrangements 111, 113 can be positioned along or within the opposing surfaces of the substrate 102. The substrate 102 then has opposing first and second electrode arrangements 111, 113 patterned (e.g., mirrored and / or in a one-to-one configuration) to form curved surfaces 110, 112 such that the first and second electrode arrangements 111, 113 define an ion path 115 across a radial gap 114. With suitable static and / or dynamic voltages applied to the first and second electrode arrangements 111, 113, ions can be induced to pass through the radial gap 114 along the ion path 115. Additionally, or alternatively, in some implementations, the device 100 can be constructed layer by layer, such as by an additive manufacturing process. In such implementations, the electrode arrangements 111, 113 and other features of the device 100 can be embedded within the substrate 102. In some implementations, a bracket or housing can hold the device 100 in a desired shape.

[0038] In various examples of the coiled device 100, other amounts of curved layers can be used. The device 100 illustrated in FIGS. 1A - 1B can, for example, be coiled relatively more 'tightly', allowing for more curved layers within a radius R1. In some examples, the device 100 can be coiled relatively more 'loosely' with a relatively fewer number of rotations within a given radius R1. The device 100 can also have any desired radius R1.

[0039] Figures 2A - 2B illustrate a curved ion manipulation device 200 according to another example. The device 200 can generally be similar to the ion manipulation device 100 in various respects. The device 200 is formed from a pair of substrates 202A, 202B that can form most of the structure of the device 200. The device 200 can have a helical or coiled shape that extends longitudinally from a first end 218 to a second end 220, and the pair of substrates 202A, 202B are in a continuous form and trace a helix radially outward from the innermost region 204 of the device to the outermost region 206 of the device.

[0040] As shown in FIGS. 2A - 2B, the coiled shape of the device 200 can define a pair of opposing curved surfaces 208a - 208d that are positioned along the radius R2 of the device 200 and in the YZ plane. Each pair of opposing curved surfaces 208a - 208d can be one of a plurality of pairs of curved surfaces 208a - 208d that are arranged radially in series around a common longitudinal axis A2. The radius of each given pair of curved surfaces 208a - 208d can increase within a range of radii as the opposing curved surfaces 208a - 208d trace a helix outward to a subsequent pair of opposing curved surfaces 208a - 208d. Each pair of opposing curved surfaces 208a - 208d of the device 200 can include a portion of a first curved surface 210 that faces radially outward and away from the common longitudinal axis A2, and a portion of a second curved surface 112 that faces radially inward toward the common axis A2. As the substrates 202A, 202B trace a helix radially outward, the first curved surface 210 can correspond to one surface of the substrate 202A, and the second curved surface 212 can be adjacent to the first curved surface 210 and correspond to the surface of the opposing substrate 202B.

[0041] A radial gap 214 is defined that extends between each pair of opposing curved surfaces 208a - 208d. The radial gap 214 can be defined by the space that extends between a first curved surface 210 and a second curved surface 212 that is adjacent and opposed to the first curved surface 210 (e.g., in FIGS. 2A - 2B, the pair of curved surfaces 208b). The pairs of opposing curved surfaces 208a - 208d can be smoothly connected to each other such that they form a radial gap 214 like a continuous coiled gap between two or more pairs of opposing curved surfaces 208a - 208d. At least a first electrode arrangement can be patterned along the first curved surface 210 on one side of the radial gap 214, and a second electrode arrangement that is opposed to the first electrode arrangement can be patterned along the second curved surface 212 and across the radial gap 214. Although not shown, it should be understood that the first and second electrode arrangements of device 200 can include electrode arrangements similar to any of the electrode arrangements 111, 113 described in connection with device 100 and FIG. 1B or other electrode arrangements described herein.

[0042] The first and second electrode arrangements define an ion path 215 that extends at least through the radial gap 214 and part of the device 200. The first and second electrode arrangements can be similar to each other across the radial gap 214. The patterned first and second electrode arrangements can be arranged, for example, radially aligned across the radial gap 214 such that the electrode arrangements are mirror images of each other or in a one-to-one correspondence with each other. As one example, the second electrode arrangement can be placed radially outside the first electrode arrangement and have relatively longer electrodes and / or electrode gaps circumferentially than the opposing electrodes and electrode gaps of the first electrode arrangement placed radially inside. The ion path 215 can extend continuously through the radial gap 214 between the innermost and outermost regions 204, 206. The ion path 215 defined between the radial gap 214 by the first and second electrode arrangements and the curved surface of the device 200 can also have linear and / or non-linear segments (e.g., FIGS. 6A - 7B). The first and second electrode arrangements and the ion path 215 can have, for example, longitudinal segments that extend parallel to a common axis A2 in the + / -X direction and circumferential segments that follow the curvature of the first and second curved surfaces 210, 212 and the radial gap 214 (e.g., in the YZ plane). Ions induced through the radial gap 214 and along the ion path 215 of the device 200 can follow the entire circumferential path in either the clockwise or counterclockwise direction. The entire circumferential path is indicated by the arrow 216.

[0043] Ions can be introduced into and exit the device 200 through ion inlets and outlets positioned to couple the ions into or out of the radial gap 214 at any location throughout the radial gap 214 and at either the first end 218 or the second end 220 of the device 200. For example, ions can enter and / or exit the device 200 at the first end 218 or the second end 220 through the radial gap 214 at any location in the innermost region 204, the outermost region 206, and / or any location between the innermost and outermost regions 204, 206.

[0044] As mentioned, the ion manipulation device 200 can be constructed from a pair of substrates 202A-202B. The substrates 202A-202B of the device 200 can be a flexible or semi-flexible substrate material layer or set of layers (e.g., a flexible printed circuit board), which can be coiled, rolled, or otherwise manipulated from a planar or otherwise non-coiled shape to the coiled shape shown in FIGS. 2A-2B. The substrates 202A-202B can be held in this shape via brackets, housings, and / or by the robustness of the substrate material. In a representative example, the substrates 202A-202B do not have electrode arrangements on both surfaces. Instead, one surface (e.g., the curved surfaces 210, 212) of each substrate 202A-202B can be patterned or embedded with one of the first and second electrode arrangements that define the ion path 215 through the radial gap 214. For example, the substrates 202A-202B can be coiled parallel to each other such that corresponding segments of the first and second electrode arrangements face each other, are radially aligned, and are similar to each other across the radial gap 214. Alternatively, the device 200 can be formed layer by layer, such as by an additive manufacturing process.

[0045] The coiled shape of device 200 can, in some instances, include any desired amount of opposing curved surfaces 208a - 208d. In particular, device 200 can be wound in a relatively "tighter" coil shape, enabling more pairs of opposing curved surfaces 208a - 208d within radius R2, or can be wound in a relatively "looser" coil shape, having a relatively fewer number of pairs of opposing curved surfaces 208a - 208d within radius R2. Device 200 can also have any desired radius R2, and the distance between the curved surfaces 210, 212 of the opposing curved surfaces 208a - 208d across the radial gap 214 can have the same or substantially the same value S2 throughout. This ensures that the ion path is consistently configured for ion confinement throughout device 200.

[0046] Figures 3A - 3B depict a curved ion manipulation device 300 according to another example. Device 300 can be constructed from a pair of substrates 302A, 304A that form cylindrical inner and outer structures 302, 304. The inner and outer structures 302, 304 are concentrically aligned and can extend longitudinally (e.g., in the + / -X direction) from a first end 306 to a second end 308 of the device. The inner and outer structures 302, 304 can also define a pair of opposing curved surfaces 310, 312 that are positioned along the radius R3 and in the YZ plane of device 300 such that the curved surfaces 310, 312 are disposed about a central or common longitudinal axis A3. The radii of the curved surfaces 310, 312 can increase and decrease as the distance between the curved surfaces 310, 312 and the common axis A3 increases and decreases. The inner structure 302 can define the central portion of device 300 and can include a first curved surface 310, and the outer structure 304 can include a second curved surface 312 that is adjacent and opposed to the first surface 310 of the inner structure 302. The first curved surface 310 can face radially outward to a surface that faces outward from the longitudinal axis A3, and the second curved surface 312 can face radially inward to a surface that faces toward the first curved surface 310 and the longitudinal axis A3.

[0047] The radial gap 314 extends between the internal and external structures 302 and 304, and the opposing curved surfaces 310, 312. The radial gap 314 can be defined by the space extending between the first curved surface 310 of the inner structure 302 and the second surface 312 of the outer structure 304. At least the first electrode arrangement 311 can be patterned along the first curved surface 310 on one side of the radial gap 314, and at least the second electrode arrangement 313 opposing the first electrode arrangement 311 can be patterned along the curved surface 312 across the radial gap 314. For illustrative purposes, only a few of the electrodes of the first and second electrode arrangements 311, 313 are shown in FIG. 3B.

[0048] The first and second electrode arrangements 311, 313 define an ion path 315 that passes through at least a portion of the radial gap 314 and extends between the first and second curved surfaces 310, 312. The first and second electrode arrangements 311, 313 can be similar to each other and are configured for longitudinal and lateral ion confinement for guiding and manipulating ions along the ion path 315 of at least a portion of the radial gap 314, such as for ion mobility separation, ion trapping and / or other ion operations. The first electrode arrangement 311 can be, for example, placed radially inward with respect to the second electrode arrangement 313 and can have respective electrodes and / or electrode gaps that are relatively shorter circumferentially than the opposing electrodes and / or electrode gaps of the second electrode arrangement 313 placed radially outward. The first and second electrode arrangements 311, 313 can thus be patterned to mirror each other or provide a one-to-one correspondence.

[0049] The ion path 315 defined between the first and second electrode arrangements 311, 313 of the device 300 and the curved shape by the radial gap 314 can have linear and / or non-linear segments (e.g., FIGS. 6A - 7B), or a helical configuration (e.g., FIG. 8). For example, the first and second electrode arrangements 311, 313, as well as the ion path 315, can have a longitudinal segment extending in the + / -X direction parallel to the common axis A3, and a circumferential segment following the curvature of the radial gap 314 and the first and second surfaces 310, 312 of the inner and outer structures 302, 304 (e.g., within the YZ plane of the device 300). As indicated by the arrow 316, when ions are induced along the ion path 315 of the radial gap 314 and through the device 300, the ions can follow the entire circumferential path in either the clockwise or counterclockwise direction.

[0050] In various other implementations, the ion path 315 of the radial gap 314 can have a helical or coiled configuration. As one example, the first and second electrode arrangements 311, 313 that define the ion path 315 can be arranged in a helical pattern along the opposing curved surfaces 310, 312 and the length of the device 300. In this helical configuration, ions can be induced along the ion path 315, through the radial gap 314 circumferentially around the inner structure 302 and the common axis A3 in both the + / -YZ directions (e.g., as indicated by the arrow 316), as well as along the length of the device 300 in the +X or -X direction (FIG. 8).

[0051] Ions can be introduced into the radial gap 314 of device 300 through an ion inlet and can exit the radial gap 314 of device 300 through an ion outlet. The ion inlet and outlet can be positioned anywhere throughout the radial gap 314. As illustrated in FIGS. 3A - 3B, for example, ions can be introduced at the first end 306 of device 300 through an ion inlet that is located along the radial gap 314 and at any position between the respective first and second curved surfaces 310, 312. The ions can then exit the radial gap 314 of device 300 at either the first end 306 and / or the second end 308, depending on the configuration of the ion path 315 that extends through the radial gap 314, such as a helical configuration or combination of linear and non - linear segments. As one example, two longitudinal segments of the ion path 315 can define the ion inlet and the ion outlet, each located at the same end of device 300, such as the first end 306 or the second end 308.

[0052] One or both of the substrates 302A, 304 forming the inner and outer structures 302, 304 of the ion manipulation device 300 can be constructed from a layer or set of layers of flexible or semi-flexible substrate material (e.g., a flexible printed circuit board). The outer structure 304 can be formed, for example, from a single substrate 304A which is curved or otherwise shaped into a tubular cylindrical structure such that the outer structure 304 defines a second curved surface 312 and surrounds the inner structure 302. The inner structure 302 can be formed from a solid or hollow substrate 302A that extends coaxially through the outer structure 304. In some implementations, the inner structure 302 can be shaped into a tubular cylindrical structure similar to that of the outer structure 304. In some implementations, the inner structure 302 can have another ion manipulation device, such as a drift tube (FIG. 9), that is coaxially aligned with and extends through the inner structure 302. Additionally, or alternatively, in some implementations, the device 300 can be constructed layer by layer, such as by an additive manufacturing process. In such implementations, the electrode placement and other characteristics of the device can be embedded within the structures 302, 304.

[0053] Figures 4A - 4C depict a curved ion manipulation device 400 according to another example. The device 400 can include three or more cylindrical structures 402, 404a - 404c, each constructed from respective substrates 402A, 404A - 404C. The device 400 can include a first inner structure 402 and a series of outer structures 404a - 404c surrounding the inner structure 402. The inner and outer structures 402, 404a - 404c are concentrically aligned and can extend longitudinally (e.g., in the + / -X direction) from a first end 406 of the device 400 to a second end 408 of the device 400. The inner and outer structures 402, 404a - 404c can define pairs of opposing curved surfaces 422a - 422d positioned along a radius R4 of the device 400 such that pairs of opposing curved surfaces 410, 412 are arranged in series about a common axis A4. The radii of the opposing curved surfaces 422a - 422d can increase and decrease as the distance between the curved surfaces 422a - 422d and the common axis A4 increases and decreases.

[0054] Each pair of opposing curved surfaces 422a - 422d can include a first curved surface 410 and a second curved surface 412 adjacent and opposing the first curved surface 410. For example, the inner structure 402 can define a central portion of the device 400 and can each include a first curved surface 410 that is radially outward and facing away from the longitudinal axis A4. Each outer structure 404a - 404c of the device 400 can also include a respective first surface 410 and a second radially inward-facing surface 412 that faces radially inward toward the longitudinal axis A4 and the respective first surface 410.

[0055] Radial gaps 414a - 414c (FIG. 4C) are defined that extend between each pair of opposing curved surfaces 422a - 422d. Each radial gap 414a - 414c can be defined by the space between a first surface 410 of one structure 402, 404a - 404c and a second surface 412 of an adjacent structure 404a - 404c (e.g., the first surface 410 of structure 404b and the second surface 412 of structure 404c). As described herein, at least the first electrode arrangement can be patterned along the first curved surface 410 on one side of the radial gap 414, and at least the second electrode arrangement opposing the first electrode arrangement can be patterned along the opposing curved surface 412 across the radial gap 414 (e.g., similar to electrode arrangements 311, 313). The first and second electrode arrangements define an ion path 415 that extends through at least a portion of the radial gaps 414a - 414c. In various examples, the first and second electrode arrangements can be similar to each other across their respective radial gaps 414a - 414c such that the first and second electrode arrangements are mirror images of each other or provide a one - to - one correspondence. In each implementation, the distance between the opposing curved surfaces 422a - 422c across each radial gap 414a - 414c can have the same or nearly the same value S4 for consistent ion confinement throughout the device 400.

[0056] The configuration of the first and second electrode arrangements that define the ion paths 415 of the radial gaps 414a - 414c can be the same along each radial gap 414a - 414c of the device 400, or can be different along two or more of the radial gaps 414a - 414c. In particular, in a first implementation, each radial gap 414a - 414c of the device 400 can have the same opposing electrode configuration and the configuration of the defined ion path 415, whereas in a second implementation, two or more of the radial gaps 414a - 414c can have different opposing electrode configurations and the configuration of the defined ion path 415. In one electrode arrangement, the ion path 415 can be defined by linear and / or non - linear segments of the opposing electrode arrangement (e.g., FIGS. 6A - 7B and FIG. 9). The first and second electrode arrangements that define the ion paths 415 of one or more of the radial gaps 414a - 414c can have, for example, longitudinal segments that extend in the + / -X direction parallel to a common axis A4, and circumferential segments that follow the radial gaps 414a - 414c and respective first and second curved surfaces 410, 412 (e.g., within the YZ plane of the device 400). In another electrode arrangement, the opposing electrode arrangement that defines the ion paths 415 of one or more of the radial gaps 414a - 414c can be defined by a helical or coiled electrode pattern (e.g., FIG. 8). The first and second electrode arrangements can define, for example, helical ion paths 415 that extend circumferentially around their respective structures 402, 404a - 404c and the common axis A4, in both the + / -YZ directions and in the +X or -X direction along the length of the device 400.

[0057] When comparing the coiled shapes of ion manipulation devices 100 and 200, through which ions travel through a continuous radial gap and a series of opposing curved surfaces, the ions induced through device 400 can move between the radial gaps 414a - 414c and an opposing electrode arrangement via one or more ion escalators (Figs. 10A - 10B). The ion escalators of device 400 are indicated by labels 418, 420 in Fig. 4C, which depict a cross - section of device 400 taken along the YZ plane. Each ion escalator 418, 420 has a curved geometry within the YZ plane and can be defined by an opening that extends through the respective outer structures 404a - 404c of device 400 from one radial gap 414a - 414c to the next adjacent radial gap 414a - 414c. Each ion escalator 418, 420 can have at least one pair of opposing electrode arrangements configured and arranged to direct ions from one ion path 415 in one radial gap 414a - 414c to another ion path 415 in an adjacent radial gap 414a - 414c. In the illustrative example of Fig. 4C, for instance, ions can be introduced into the innermost radial gap 414a proximate to the inner structure 402 and directed to the adjacent radial gap 414b via ion escalator 418. In some ways, ions can be directed from radial gap 414b to the adjacent radial gap 414c through ion escalator 420. Ions can thus be directed radially outward and through a series of two or more radial gaps 414a - 414c (e.g., as indicated by arrow 416) to the outermost radial gap 414c from the common axis A4. Conversely, ions can be directed radially inward toward the common axis A4 to the innermost radial gap 414a and through a series of two or more radial gaps 414a - 414c via escalators 418, 420.

[0058] The ion escalators 418, 420 described in this specification can extend between each of the radial gaps 414a - 414c and the respective ion paths 415, or between selected non - adjacent radial gaps 414a - 414c and the ion path 415, depending on the desired configuration. In some implementations, in addition to inducing ions between adjacent radial gaps 414a - 414c, two or more ion escalators can form a chain of escalators where ions can be induced from one radial gap 414a - 414c to another non - adjacent radial gap. As an example, the ion escalators 418, 420 of the device 400 can be aligned to form an escalator chain where ions in the outermost radial gap 414c of the device 400 can travel directly to the innermost radial gap 414a. This allows, among other things, the device 400 to be configured to recirculate ions more than once, through one or more selected radial gaps 414a - 414c or through the entire device 400 as desired. In some implementations, the ions do not necessarily need to circulate or recirculate between the innermost and outermost radial gaps 414a, 414c of the device 400, but can circulate or recirculate through any two or more radial gaps 414a - 414c positioned between the innermost and outermost radial gaps.

[0059] As shown in FIGS. 4A - 4C and indicated by arrow 416, ions are guided along ion path 415 of one or more radial gaps 414a - 414c, so that the ions can follow the entire circumferential path. Although the entire circumferential path 416 is shown as being guided in the clockwise direction, it should be understood that the entire path can be similarly guided in the counterclockwise direction. It is not necessary for the ion paths to follow the same direction along each of the radial gaps 414a - 414c. For example, ions introduced in the innermost radial gap 414a can travel in the clockwise direction along the entire circumferential path 416, but are then guided to the next adjacent radial gap 414b where the ions travel in the counterclockwise direction along the entire circumferential path 416. The direction of the entire circumferential path 416 for each pair of adjacent curved surfaces 410, 412 and radial gaps 414 can be determined by the configuration of the respective first and second electrode arrangements that define the respective ion paths.

[0060] Ions can be introduced and exit device 400 through one or more ion inlets and outlets and are located at or along any position along each of the radial gaps 414a - 414c to couple ions to or from device 400. Ions can be introduced into device 400 from another device, such as an ion injector, ion trap or other ion manipulation device, and can exit device 400 to be received by another device, such as a mass spectrometer, ion analyzer and / or another ion manipulation device. The ion inlets and outlets can be located at any desired suitable position at the first end 406 or the second end 408 of device 400.

[0061] The substrates 402A, 404A - C that form the inner and outer structures 402, 404a - 404c of the ion manipulation device 400 can be constructed from a layer or set of layers of a flexible or semi - flexible substrate material as described herein, such as a flexible printed circuit board. Each of the outer structures 404a - 404c can be formed from a single substrate that is curved, for example, into a tubular cylindrical structure that defines respective first and second curved surfaces 410, 412 as shown in FIGS. 4A - 4C, or otherwise shaped. The inner structure 402 can be formed from a solid or hollow substrate that extends coaxially through the adjacent outermost structure 404a and forms respective first curved surfaces 410. Pairs of adjacent curved surfaces 402, 404a - 404c are similar to each other and can be formed in such a way as to form corresponding opposing adjacent first and second electrode arrangements that define an ion path for guiding ions along the radial gaps 414a - 414c, for example, in a reflected configuration or a one - to - one correspondence. In some implementations, the inner structure 402 can be formed into a tubular cylindrical structure similar to that of the outer structures 404a - 404c. In such an implementation, the inner structure 402 can be coaxially aligned with a volume defined by the inner structure 402 (e.g., FIG. 9), such as a drift tube, and can have another ion manipulation device that extends coaxially through the volume. Additionally, or alternatively, in some implementations, the device 400 or a portion of the device can be constructed layer - by - layer, such as by an additive manufacturing process. In such an implementation, the electrode arrangements and other characteristics of the device can be embedded within the structures 402, 404a - 404c.

[0062] Although shown as having four structures and three radial gaps defined by each pair of opposing curved surfaces, it will be understood that device 400 can include any number of desired structures as well as respective curved surfaces and radial gaps. Device 400 can include, for example, three concentric structures having two radial gaps and each pair of opposing curved surfaces, but in other examples, device 400 can have five or more structures, as well as four or more radial gaps and each pair of opposing curved surfaces. Device 400 can have any radius R4 as desired.

[0063] Although ion manipulation devices 100 - 400 are described and depicted herein as being circular and cylindrical, it will be understood that ion manipulation devices can take different forms. Any of the ion manipulation devices can be shaped, for example, generally as an oblique cylinder or an elliptical cylinder, or other geometric shapes (e.g., rectangular, hexagonal, etc.).

[0064] Figures 5A-5C are respective electrode arrangements 500A-500C patterned along respective substrates 502A-502C, each of which substrates 502A-502C can be the substrate formed into the ion manipulation devices 100-400 described herein. For purposes of illustration, each electrode arrangement 500A-500C and substrate 502A-502C are shown in a flat configuration. However, it should be understood that each electrode arrangement 500A-500C and substrate 502A-502C can be curved along, and form, respective curved surfaces (e.g., of FIGS. 1A-4C, and 6A-7B) when implemented within the described ion manipulation devices. In each of the illustrated examples of FIGS. 5A-5C, the curvature and / or formation of substrates 502A-502C, and electrode arrangements 500A-500C, are generally indicated by arrow 5. It should be understood that each electrode arrangement 500A-500C can be one of a pair of opposing electrode arrangements used to define respective ion paths.

[0065] As shown in FIG. 5A, electrode arrangement 500A can include a plurality of RF electrodes 506a-506d extending along propagation axis 504A and between input and output ends 510a, 510b. The RF electrodes 506a-506d typically receive RF voltages that are phase-shifted alternately or adjacently. For example, in the configuration shown in FIG. 5A, RF electrodes 506a, 506c can be in phase with each other and 180 degrees out of phase with adjacent RF electrodes 506b, 506d. Electrode arrangement 500A can also include a plurality of traveling wave electrode sets 508a-508d extending parallel to propagation axis 504A, adjacent to, and disposed between, RF electrodes 506a-506d. Each traveling wave set 508a-508d can include respective traveling wave electrodes 512a-512d configured to receive a corresponding time-varying DC voltage or phase-shifted AC voltage to form a traveling wave that induces (e.g., separates) ions along ion propagation axis 504A.

[0066] A voltage source 501 coupled to the electrodes 506a - 506d can be configured to supply an RF potential to the RF electrodes 506a - 506d. In this way, the RF electrodes 506a - 506d can confine ions between pairs of opposing electrode arrangements 500A that define an ion path. Each traveling wave set 508a - 508d can be coupled to a DC voltage source 503 to receive a dynamically applied DC traveling wave that creates a traveling wave electric field (i.e., a traveling wave) within the confinement volume between pairs of opposing electrode arrangements 500A that define an ion path. In some implementations, the dynamically applied DC traveling wave voltage can be applied differently along different segments of the ion manipulation device to create different ion manipulations. The traveling wave changes over time and can create movement, net movement, separation, trapping, accumulation, peak compression, direction reversal, and / or other operations of ions within the confinement volume based on ion properties such as ion mobility or polarity. The traveling wave voltage can also be applied such that similar voltages are applied to the traveling wave electrodes of pairs of opposing electrode arrangements, but other non - similar or modified configurations, including those in bends, escalators, switches, etc., can be used.

[0067] Now, referring to FIG. 5B, the electrode arrangement 500B can include a plurality of laterally extending RF electrodes 514a - 514o arranged in a columnar configuration that follows the ion propagation axis 504B. Adjacent RF electrodes 514a - 514o can be in opposite phase with each other such that the RF electrodes 514a - 514o can induce ions away from the substrate 502B for ion confinement. In some implementations, one of the selected RF electrodes can be configured to receive a time - varying DC voltage such that a traveling wave electrode set induces ions along the ion propagation axis 504B. For example, the electrodes 514c, 514f, 514i, 514l, 514o can be components of the traveling wave electrode set. In such an implementation, the traveling wave created by the traveling wave electrode set is superimposed across the RF potential to cause ion manipulation and ion confinement.

[0068] The electrode arrangement 500C in FIG. 5C can include a plurality of RF electrode posts 516-516c. Each RF electrode post 516-516c can include a plurality of respective RF electrodes 518a-518c and intervening traveling electrode sets 520a-520c. The RF electrode posts 516-516c and the traveling wave electrode sets 520a-520c can extend parallel to the ion propagation axis 506E (e.g., the RF electrodes 518a-518c are perpendicular). In some configurations, adjacent electrodes 518a-518c of the RF electrode posts 516-516c can be in opposite phases with respect to each other. In other configurations, laterally adjacent electrodes 518a-518c in one or more selected sequences can have opposite phases.

[0069] The RF voltage received by the electrodes can vary over time, for example, with respect to frequency and amplitude, or between adjacent electrodes. Characteristics of the traveling wave, such as the wave speed or amplitude, can also vary between different traveling electrode arrangements. A control device, such as a computer, a controller, etc., can be coupled to or be part of any voltage source to control the potentials applied to the various electrodes, including for ion escalators, switches, DC and / or RF confinement potentials, and traveling wave sequences, directions, amplitudes, frequencies, etc. Typically, a processor can execute computer-readable instructions stored in memory to control the potentials of the electrodes within the ion manipulation device.

[0070] In some implementations, each of the electrode arrangements 500A - 500E can be placed between guard electrodes (e.g., guard electrode 1038 of FIG. 10A). The guard electrodes can be driven at a relatively high voltage compared to the voltages applied to the RF and / or DC electrodes such that ions that drift laterally or orthogonally to the ion propagation axis are ions confined within a given ion path. Further details and descriptions of the electrode arrangements are described, for example, in U.S. Patent No. 10,460,920, which is hereby incorporated by reference in its entirety. In further implementations, the RF and / or traveling wave electrodes of the electrode arrangements 500A - 500C can be spaced axially and laterally from each other so that the electrodes do not contact or short each other when their respective substrates 502A - 502C are curved (e.g., in three dimensions) or otherwise shaped into a non - flat configuration.

[0071] FIGS. 6A and 7A depict examples of respective substrates 600, 700 that can be used in the construction of the ion manipulation devices 100 - 400 described herein. Substrates 600, 700 are shown in a flat or planar state and can be one of an individual or a pair of substrates, which can then be wound in a coil, rolled up, or otherwise shaped into the coiled shape of device 100 or device 200. Substrates 600, 700 can also be shaped by being curved, folded, or otherwise formed into any one of the structures of device 300 or device 400. This formation of substrates 600, 700 is indicated by arrows 6A and 7A, respectively.

[0072] Each of the substrates 600, 700 can also include respective electrode arrangements that can define an ion path when paired with opposing electrode arrangements. As shown in both FIGS. 6A and 7A, each electrode arrangement 602, 702 can be patterned, printed, and / or embedded along the surfaces 608, 708 of the respective substrates 600, 700. The electrode arrangements 602, 702 can extend along at least a portion of the substrate surfaces 608, 708 between respective first ends 604, 704 and second ends 606, 706 and can have a similar serpentine arrangement. Each electrode arrangement 602, 702 can include, for example, a plurality of straight segments 626, 726 and bent segments 628, 728 within the serpentine arrangement. As shown in FIG. 6A, the straight segments 626 of the electrode arrangement 602 can extend in the + / -Z direction and can have a first length that is relatively longer than the bent segments 628 that are arranged to link the straight segments 626 to each other to define a continuous patterned electrode path. The bent segments 628 can extend in the + / -X direction and can have a length that is relatively shorter than the straight segments 626 by virtue of the expansion. In comparison, the electrode arrangement 702 can have a different orientation. In particular, as illustrated in FIG. 7A, the straight segments 726 of the electrode arrangement 702 can extend in the + / -X direction, while the bent segments 728 can link with the straight segments 726 and can extend in the + / -Z direction. As further described, the straight segments 626, 726 and the bent segments 628, 728 can correspond to circumferential and longitudinal segments of an ion path that extends along one or more radial gaps of the ion manipulation device.

[0073] As depicted in FIGS. 6A and 7A, the ion inlets 630, 730 of the electrode arrangements 602, 702 can be located at the respective first ends 604, 704 of the substrates 600, 700. The inlets 630, 730 are the locations where ions are first introduced into the ion manipulation device and / or the locations where ions enter after traveling through an ion escalator and into another connected ion path and radial gap (e.g., FIGS. 4C and 10A - 10B). One or more switches 632, 732, ion escalators 634, 734 and / or ion outlets 636, 736 can be located at the respective second ends 606, 706. The switches 632, 732 can each include the respective electrode arrangement configured (e.g., using a DC voltage) to direct ions to an adjacent radial gap or another radial gap for circulation or recirculation and to the ion escalators 634, 734 that can be induced in pairs of electrode arrangements. The switches 632, 732 can alternately direct ions to the outlets 636, 736 such that the ions exit the ion manipulation device to another device, etc. for analysis or further manipulation. In some implementations, the switches 632, 732 can have operating states such as a first state and a second state, which can be controlled via a potential suitable to direct ions to the ion escalators 634, 734 or the outlets 636, 736 as desired. In other implementations, the switches 632, 732 can be used for ion trapping or ion accumulation, such as by accumulating ions at the switches 632, 732 for some time interval. It should also be understood that in some implementations, the ion escalators 634, 734 need not be included. For example, in the coiled shape of the ion manipulation devices 100 - 200 or in a single pair of the structures of the device 300, an ion escalator may not be desired. It will also be understood that the inlets, outlets, ion escalators and switches can be located at segments, ends or other parts of the electrode arrangements 602, 702 that are different from those described to be suitable for various configurations.

[0074] The electrode arrangements 602, 702 can act as one electrode arrangement in a pair of opposing electrode arrangements that define an ion path. FIGS. 6B and 7B show, for example, each substrate 600, 700 after being formed in the outer structures 612, 712 of the respective ion manipulation devices 610, 710. The ion manipulation devices 610, 710 can have the same general arrangement as the ion manipulation device 300 or the ion manipulation device 400. In particular, as shown in the illustrated example, the substrates 600, 700 surround the inner structures 614, 714 (the inner structures 614, 714 are not shown in FIGS. 7A, 7B) along the common longitudinal axes A6, A7, and are formed in the outer structures 612, 712 of the respective ion manipulation devices 610, 710 that are coaxially aligned therewith. In this configuration, the inner structures 614, 714 define first curved surfaces 616, 716 that face radially outward from the respective common axes A6, A7, while the surfaces 608, 708 of the substrates 600, 700 face the first curved surfaces 616, 716 and define second curved surfaces 618, 718 that face radially inward toward the common axes A6, A7. Each pair of opposing curved surfaces 616, 618 and curved surfaces 716, 718 defines a respective radial gap 622, 722 that extends therebetween. The inner structures 614, 714 can also include respective first electrode arrangements 620, 720 that are patterned along the first curved surfaces 616, 716 on one side of the radial gaps 622, 722 in a meandering arrangement, which corresponds to the second electrode arrangements 602, 702 that are patterned along the second surfaces 618, 718 of the substrates 600, 700 and across the radial gaps 622, 722. In this way, the electrode arrangements 620, 720 of the inner structures 614, 714 can be radially aligned and opposed to the electrode arrangements 602, 702 such that the electrode arrangements 620, 602 and the electrode arrangements 720, 702 are similar to each other and can define ion paths 624, 724 that extend through the respective radial gaps 622, 722 and the devices 610, 710 (in a reflected structure or in a one-to-one correspondence).Accordingly, as shown in FIGS. 6B and 7B, the straight segments 626, 726 and the bent segments 628, 728 reflected in the serpentine arrangements of the electrode arrangements 602, 702 define circumferential and longitudinal segments of the ion paths 624, 724 that extend through the radial gaps 622, 722 and the curved surfaces (e.g., the opposing electrode arrangements 912, 914 of FIG. 9). It should be understood that in some examples, the electrode arrangements patterned along one curved surface can be slightly different in scale from the opposing electrode arrangements of the opposing curved surface. For example, the electrode arrangement patterned along the inner curved surface can be slightly smaller in scale than the opposing electrode arrangement patterned along the corresponding outer curved surface having a relatively longer radius than the inner curved surface. Differences in scale, such as the size and shape of the electrode arrangements, can take into account the difference in the respective radial gaps and the radius across the pair of opposing curved surfaces to ensure that the pair of opposing electrode arrangements define the desired ion path.

[0075] Figure 6B depicts a cross-section of the ion manipulation device 610 after being taken along the YZ plane of the substrate 600 shown in Figure 6A, which is rolled up in a roll shape. Figure 6A shows that the plane 6B is taken along the straight segment 628 of the electrode arrangement 602 and is part of the electrode arrangement 602 illustrated in Figure 6B. As shown in Figure 6B, the electrode arrangement 602 of the inner structure 614 and the straight segment 626 of the electrode arrangement 620 define a circumferential segment 638 of the ion path 624 that follows the curvature of the first and second curved surfaces 616, 618 (or surface 608) and the radial gap 622 within the YZ plane of the device 610. As illustrated in Figure 6B, ions can propagate circumferentially along the circumferential segment 638 in a counterclockwise direction following the axis 640 of propagation. In this configuration, when the ions reach the uppermost end of the circumferential segment 638, the ions are induced in the + / -X direction into the plane of Figure 6B as they proceed through each of the curved segments 628 until they reach the ion escalator 634 or the exit 636 and then to the next straight segment 626. When the ions proceed through the next adjacent straight segment 626, the ions can move circumferentially in a clockwise direction. Thus, the ions can be said to follow the entire circumferential path through the ion manipulation device 610 and the straight segments 626. In some implementations, the ions move in both clockwise and counterclockwise directions in an alternating pattern as the ions proceed along two or more radial gaps.

[0076] Similarly, FIG. 7B depicts a cross-section of the ion manipulation device 710 taken along a plane 7B that extends in the YZ direction of the substrate 700. As shown in FIG. 7A, the plane 7B extends across a series of straight and elongated segments 728 of the electrode arrangement 702 that are proximate to the first end 704 of the substrate 700. FIG. 7B shows that a series of straight and elongated segments 728 of the electrode arrangement 702 and the electrode arrangement 720 define a corresponding number of circumferential segments 738 that follow the curvature of the first and second curved surfaces 716, 718 (or surface 708) as well as the curvature of the radial gap 722. Ions induced through these circumferential segments 738 can propagate along the axis of propagation 740 through each segment in a counterclockwise (or clockwise) direction. A pair of vertical segments of the ion path 724 that extend in the + / -X direction of the device 710 (into and out of the plane of FIG. 7B) are located between each circumferential segment 738. An example of a vertical segment is shown in FIG. 9 and is defined by opposing electrode arrangements 912, 914. At the opposing ends of the device 710, e.g., the second end 706 of the substrate 700, another series of bent segments 728 define another corresponding number of circumferential segments 738. Ions can move through and around the circumferential segments 738 and vertical segments of the device 710 through the curved surfaces 716, 718 and the radial gap 722 until they reach the ion escalator 734 or the exit 736.

[0077] Although described herein as having a meandering arrangement, the electrode arrangements 602, 702 can have any configuration or arrangement in accordance with the present disclosure.

[0078] FIG. 8 illustrates a segment of an ion manipulation device 800 having one or more helical ion paths 802 that extend along the device. The device 800 has a configuration similar to that of ion manipulation device 300 or ion manipulation device 400 and can include any one or combination of the characteristics described above in connection with FIGS. 3A - 4C. The ion manipulation device 800 can include a series of cylindrical structures such as a first inner structure 804 and a second outer structure 806, which are coaxially aligned along a common longitudinal axis A8. The inner and outer structures 804, 806 can each define a pair of adjacent curved surfaces 808, 810 that face each other and are spaced apart to define a radial gap 812. The curved surfaces 808, 810 and the radial gap 812 can be arranged radially around the common axis A8. The curved surface 808 of the inner structure 804 faces radially outward away from the common axis A8 and can include a first electrode arrangement 814. In a similar fashion, the curved surface 810 of the outer structure 806 is a surface that faces radially inward toward the common axis A8 and can include a second electrode arrangement 816 that is opposed to the first electrode arrangement 814. For purposes of illustration, to show the helical ion path 802, FIG. 8 shows a partial cross - section taken along the XY plane of the ion manipulation device 800 through the outer structure 806 and the first and second electrode arrangements 814, 816. The first and second electrode arrangements 814, 816 are also shown schematically. It should be understood that the first and second electrode arrangements 814, 816 of the device 800 can comprise any one or combination of electrode arrangements described in connection with FIGS. 5A - 5E for ion confinement and manipulation.

[0079] As shown in FIG. 8, the first and second electrode arrangements 814, 816 are similar to each other and can define a helical ion path 802 that extends along the radial gap 812 and along the device 800. The first and second electrode arrangements 814, 816 can be configured for longitudinal and lateral ion confinement to guide and manipulate ions along the helical ion path 802, for example, for ion mobility separation or ion trapping. The helical path 802 is depicted by outer lateral boundaries (e.g., orthogonal) defined by the potentials applied to the first and second electrode arrangements 814, 816. Ions generally travel along the ion propagation axis 818. When ions are induced through the radial gap 812 and the helical path 802, the ions can follow a circumferential path around the inner structure 804 and the common axis A8 in both the + / −YZ directions while moving along the length of the device 800 in the +X or −X direction, throughout the circumferential ion path (e.g., FIGS. 3A - 4C). As mentioned in connection with FIGS. 4A - 4C, multiple helical paths can each be included throughout the ion manipulation device described herein along their respective radial gaps. In the example shown in FIG. 8, for instance, when ions travel through the helical path 802 from the first end 820 of the device 800 to another end 822 of the device in the +X direction, the ions can be induced via one or more ion escalators to an adjacent or non - adjacent another radial gap, which can include its own helical ion path. In this case, the helical path of the second radial gap can travel from the first end 822 of the device to the other end 820 in the - X direction. A third helical ion path in this sequence can travel in the +X direction again. In some implementations, one or more helical paths 802 can be arranged and combined with one or more ion paths having longitudinal segments and circumferential segments (FIGS. 6A - 7B).Rather than using electrodes to push ions down the length of the device or to form an electrical barrier to substantially extend the ion path, the ion manipulation device 800 is configured to direct ions along a realized helical ion path 802 through the helical ion path 802, which advantageously extends the physical length of the ion path where other applications for ion mobility manipulation cannot be achieved.

[0080] FIG. 9 shows a segment of another ion manipulation device 900. The device 900 can have a configuration similar to the ion manipulation device 300, device 400, device 610, device 710 or device 800, and can include any one or combination of the characteristics described above in connection with FIGS. 3A-4C and FIGS. 6A-8.

[0081] FIG. 9 shows a cross-sectional view of device 900 taken along the XY plane parallel to the common vertical axis A9. The ion manipulation device 900 can include a series of two or more cylindrical structures coaxially aligned with each other along the common axis A9. In the illustrated example of FIG. 9, a first inner structure 902 and a second outer structure 904 surrounding the inner structure 902 are shown. The inner and outer structures 902, 904 can face each other to define a radial gap 910 and define respective pairs of adjacent curved surfaces 906, 908 that are spaced apart. The curved surface 906 of the inner structure 902 can be a radially outward-facing surface that faces outward from the common axis A9, whereas the curved surface 908 of the outer structure 904 can be a radially inward-facing surface that faces toward the common axis A9. The device 900 can also have opposing first and second electrode arrangements 912, 914 that define an ion path having a longitudinal segment and a circumferential segment so as to oppose the helical ion path 802 of device 800. As shown in FIG. 9, for example, the first and second electrode arrangements 912, 914 extend longitudinally along the + / -X direction to define the longitudinal segment of the ion path. Although not shown, the electrode arrangements 912, 914 can also form circumferential portions (e.g., FIGS. 6B and 7B). In some implementations, the first and second electrode arrangements 912, 914 within the device 900 can define a helical ion path (FIG. 8).

[0082] The first inner structure 902 of the device 900 can have a tubular configuration. The inner structure 902 can have, for example, a cylindrical configuration similar to the outer structure 904 where the inner structure 902 has a hollow tubular body. Advantageously, in this configuration, the sub-ion manipulation device 916 can extend through the inner structure 902 such that the inner structure 902 surrounds the sub-device 916. The sub-ion manipulation device 916 can have respective electrode arrangements which further include a plurality of electrodes 918 spaced from each other along a common axis A9 and coaxial with the device 900. The sub-device 916 can be configured, for example, like a stacked ring drift tube, although other drift tubes can be used. The voltage source 920 is coupled to the sub-device 916 and can be configured to apply a range of voltages to individual electrodes or groups of electrodes 918 such that ions introduced into the sub-device 916 can be induced to pass from a first end 922 to another end 924 through the volume of the sub-device 916. The voltage source 920 can be coupled to the device 916 via wiring or a printed circuit board and can be configured to apply linear and / or non-linear electric fields (e.g., DC potentials). As shown in FIG. 9, the voltage source 920 can also be coupled to the device 900 such that the voltage source 920 can supply an electric field to both the device 900 and the sub-device 916. In other implementations, the device 900 and the sub-device 916 are coupled such that voltage sources (e.g., voltage sources 501, 517 and voltage source 920 respectively) are separated.

[0083] Control 926 can be attached to both device 900 and sub-device 916, for example, via voltage source 920, to control the operation of the device. Control 926 can be configured to switch between modalities such that, for example, device 900 is in an operating state in one state and sub-device 916 is in an operating state in another state. In this way, device 900 and sub-device 916 are configured to operate separately from each other, but can be co-located within the existing footprint of device 900. In some implementations, device 900 and sub-device 916 can operate simultaneously such that sub-device 916 can operate on ions in a different mode than the mode of device 900 when device 900 can operate on ions in one mode. Control 926 can be a processor such as a computer or other device that can execute computer-readable instructions stored in memory to control the potential of the electrodes and to perform the operations of both device 900 and sub-device 916.

[0084] Figures 10A - 10B illustrate an example of an ion escalator 1000 and a corresponding traveling wave pattern that can be used in the ion manipulation devices described herein. For purposes of illustration and to facilitate the description of the ion escalator 1000, the curved surfaces 1020, 1022, 1024, 1026 and electrode arrangements 1002, 1004, 1006, 1008 of the ion escalator 1000 are shown from the side and are shown schematically. Parts of the ion escalator 1000 that may obscure the view of the electrode arrangements and curved surfaces are also omitted for clarity. FIG. 10A is, in particular, a schematic representation of a cutout or segment of a curved ion manipulation device including the ion escalator 1000, and electrode arrangements 1002, 1004 that define an ion path 1014, electrode arrangements 1006, 1008 that define an ion path 1016, and electrode arrangements 1010, 1012 that define an ion path 1018. The ion path 1018 joins the ion paths 1014, 1016 through the ion escalator 1000. FIG. 10B is a schematic representation of the traveling wave electrodes of different electrode arrangements 1002, 1004, 1006, 1008, 1010, 1012. The traveling wave electrodes can be used to guide ions along the ion paths 1014, 1016, 1018. The schematic representations of FIGS. 10A - 10B show the electrode arrangements 1002, 1004, 1006, 1008 and the respective curved surfaces 1020, 1022, 1024, 1026 that define ion paths 1014, 1016, and 1018 that are arranged radially along the radius R10 and the Y - axis of the device including the ion escalator 1000 and extend in the + / - X and - Y directions. In this regard, the ion escalator 1000 can have a curved geometry in the + / - Z direction, similar to that of the curved surfaces 1020, 1022, 1024, 1026.

[0085] Although shown schematically, it should be understood that the electrode arrangements 1002, 1004, 1006, 1008 can be patterned along the curved surfaces 1020, 1022, 1024, 1026 in any arrangement including those electrode arrangements described herein (e.g., any of the electrode arrangements 500A - 500E shown in FIGS. 5A - 5E). The electrode arrangements 1002 - 1012 can include, for example, RF electrodes 1034 and traveling wave electrodes 1036 arranged side - by - side in an alternating pattern (e.g., along their respective curved surfaces in the Z - direction). The electrode arrangements 1002 - 1012 can be similar to, for example, the electrode arrangement 500C shown in FIG. 5C. The RF electrodes 1034 and the traveling wave electrodes 1036 can be placed between guard electrodes 1038.

[0086] As shown in FIGS. 10A - 10B, the electrode arrangements 1002, 1004 can be patterned along a first pair of adjacent curved surfaces 1020, 1022, and the electrode arrangements 1006, 1008 can be patterned along a second pair of adjacent curved surfaces 1024, 1026. Respective radial gaps 1028, 1030 for the ion paths 1014, 1016 can be defined between the curved surfaces 1020, 1022 and 1024, 1026. The opposing electrode arrangements 1002, 1004 and the opposing electrode arrangements 1006, 1008 can define, for example, a helical ion path or an ion path each having a circumferential segment and a longitudinal segment passing through their respective radial gaps 1028, 1030. The escalator region 1032 and the escalator path 1018 of the ion escalator 1000 can extend to connect the radial gaps 1028, 1030. The escalator region 1032 can be defined by the opposing electrode arrangements 1010, 1012 and the electrode arrangements 1002B, 1008B. The electrode arrangements 1002B, 1008B can correspond to, respectively, a part or an extension of the electrode arrangements 1002, 1008.

[0087] In the example illustrated in FIGS. 10A - 10B, along the radius R10 of the device, etc., the first radial gap 1028 is shown as the inner radial gap, and the second radial gap 1030 is shown as the outer radial gap. The ion escalator 1000 extends from the inner radial gap 1028 to the adjacent outer radial gap 1030, guiding ions from the ion path 1014 to the path 1016, and can be operable. In this configuration, the ions are induced radially outward (e.g., in the YZ plane of the device) from the common axis of the curved surfaces 1022, 1024, 1026, 1028. The ions can be induced radially outward (e.g., FIGS. 4A - 4C and R4) from the inner part of the ion manipulation device to the outer part of the ion manipulation device using, for example, an electrode arrangement placed in a sequence of two or more pairs of curved surfaces. Although described as inducing ions radially outward, it should be understood that the following description can be equally applied to inducing ions radially inward (e.g., towards the common axis of a plurality of adjacent surfaces).

[0088] When an RF potential is provided in an alternating polarity or other phase, the RF electrode 1034 can provide lateral confinement along the ion paths 1014, 1016, 1018 via an effective potential resulting from an RF waveform with a time - varying phase shift. The guard electrode 1038 can be used to provide an additional lateral confinement as well as to provide a lateral DC potential well. The phase - advancing wave potential applied to the traveling - wave electrode 1036 can generate a traveling wave that propagates along the ion path 1014 through the inner radial gap 1028 in the +X direction, along the path 1018 through the gap 1032 in the -Y direction, and along the path 1016 through the second radial gap 1030 in the -X direction when the ions exit the ion escalator 1000. In this configuration, the ion escalator 1000 can define a "wrap around" ion escalator configuration that facilitates the movement of ions between the first and second radial gaps 1028, 1030.

[0089] FIG. 10B illustrates an example of traveling wave potentials for ion escalator 1000 and ion paths 1014, 1016, 1018 that can be used to direct ions between inner and outer radial gaps 1028, 1030, although other potentials can be used. For illustration purposes, only traveling wave electrodes 1036 are depicted, each labeled with a respective phase of the traveling wave potential (TW). The label for traveling wave “TW1” indicates, for example, that the corresponding traveling wave electrode has a relative phase of 1. In this way, the designation of TW indicates that TW2 has a peak immediately after TW1, TW3 peaks after TW2, and so on. In the illustrated configuration of FIG. 10B, eight phases of the traveling wave potential are used, corresponding to a phase shift of approximately 45 degrees between successive phases. It should be understood that TW1 follows TW8 and can be considered equivalent to the relative phase of TW9.

[0090] As shown in FIG. 10B, the traveling wave potential can be applied to traveling wave electrodes 1002A, 1004A of electrode arrangements 1002, 1004 as shown, so that the potential traveling wave 1040 provided by electrodes 1002A, 1004A can direct ions from left to right through the first radial gap 1028, along ion path 1014, and toward ion escalator 1000. In a similar fashion, the traveling wave 1042 provided by traveling wave electrodes 1006A, 1008A can direct ions from right to left such that ions emerging from the bottom or exit of escalator 1000 travel through the second radial gap 1030 and along path 1016 in the -X direction.

[0091] As noted, the escalator path 1018 can be defined by a third pair of opposing electrode arrangements 1010, 1012, and corresponding portions 1002B, 1008B of the electrode arrangements. The electrode arrangements 1010, 1012 and the traveling wave electrode arrangements 1002B, 1008B can be in a phase such that they are generally indicated to provide a traveling wave 1044 in continuous phase with the traveling waves 1040, 1042. In some implementations, the amplitude of the traveling wave 1044 can be greater than the amplitudes of the other traveling waves 1040, 1042, and along the bend of the ion path 1018 from the first radial gap 1028, through the escalator gap 1032, into the second radial gap 1030, it can be in surf mode to provide better ion confinement and reduce ion loss. The phases of the traveling wave electrodes depicted in FIG. 10B are shown with some particularities, but other phases and configurations can be used. It should be understood that the escalator 1000 can be, for example, one within the chain of escalators that returns to another non-adjacent radial gap for recirculation or to limit the overall ion path length for ion manipulation.

[0092] It will be appreciated that the ion escalator can have different configurations. As one example, the ion escalator can be configured to receive ions propagating from opposite directions, such as ions propagating from both the -X direction and the +X direction from electrode arrangements axially aligned within a single radial gap. In such a configuration, the opposing traveling wave electrodes and potentials can be phase-matched in much the same way as described in connection with the ion escalator 1000 to induce ions from a first radial gap where the ions are propagating in opposite directions to another pair of adjacent curved surfaces and electrode arrangements. Further details and descriptions of the ion escalator are described, for example, in U.S. Patent No. 11,119,069, which is hereby incorporated by reference in its entirety.

[0093] (General Considerations) As used in this specification and the claims, the singular forms "a", "an", and "the" include the plural forms unless the context clearly dictates otherwise. Additionally, the term "includes" means "comprises". Further, the terms "coupled" or "connected" do not exclude the presence of intermediate elements between the coupled terms.

[0094] The systems, devices, and methods described herein should not be construed as being limited in any way. Instead, the present disclosure is directed to all novel and non-obvious features and aspects of the various disclosed embodiments, alone and in various combinations and sub-combinations with each other. The disclosed systems, methods, and devices are not limited to any particular aspect or feature, and the disclosed systems, methods, and devices do not require the presence of any one or more particular advantages or the solution of any problems. Any principle of operation is for purposes of illustration, but the disclosed systems, methods, and devices are not limited to such principles of operation.

[0095] Although some of the operations of the disclosed methods are described in a particular sequential order for convenience of presentation, this manner of description includes permutations unless a particular ordering is required by the specific language described below. For example, the operations described in sequence may, in some cases, be rearranged or performed simultaneously. Further, for purposes of simplification, the attached drawings may not be shown in various ways, and the disclosed systems, methods, and devices can be used in connection with other systems, methods, and devices. Additionally, the description often uses terms such as "generate" and "provide" to describe the disclosed methods. These terms are high-level abstractions of the actual operations being performed. The actual operations corresponding to these terms vary depending on the particular implementation and are readily identifiable by one of ordinary skill in the art.

[0096] In some instances, values, procedures, or apparatus are referred to as "lowest", "highest", "minimum", or the like. It will be understood that such recitations are intended to indicate that a selection can be made from among a number of alternative functional forms that are used, and that such selection need not be one that is superior, lesser, or otherwise preferred over other selections.

[0097] Some examples are described in relation to one or more longitudinal and transverse directions that are generalized to correspond to ion motion or confinement. The directions typically apply to ion motion, traps, and confinement and are provided by an electric field created by one or more electrodes disposed on the inner and opposing surfaces of a layer of an ion manipulation device to define ion paths of various shapes, sizes, and configurations that extend in one or more circumferential and longitudinal directions. The actual ion motion paths can vary and can depend on the electrode arrangement and various characteristics of the electric field created by the corresponding electrodes, as well as the position, polarity, dynamics, or other characteristics of the ions received in the confinement volume. The directions referred to herein are generalized, and actual particular particle motion typically corresponds to the electric field created, the electrical mobility of the ions propagating in relation to the electric field, and in some instances the gas flow.

[0098] Considering the many possible embodiments to which the principles of the disclosed technology can be applied, it should be recognized that the illustrated embodiments are merely representative examples and should not be taken as limiting the scope of the disclosure. The alternatives specifically addressed in these sections are merely illustrative and do not constitute all possible alternatives to the embodiments described herein. For example, the various components of the systems described herein can be combined in function and use. Therefore, claim all that is included within the scope of the appended claims.

Claims

1. An ion manipulation device, wherein the ion manipulation device comprises an ion manipulation structure, the ion manipulation structure comprising one or more pairs of opposing curved surfaces spaced radially apart from each other by a radial gap along the radius of the ion manipulation structure, the opposing curved surfaces sharing a common longitudinal axis, each pair of opposing curved surfaces comprising a first electrode arrangement and a second electrode arrangement opposing the first electrode arrangement, the first and second electrode arrangements defining an ion path through the radial gap, and configured to induce ions circumferentially along and through the ion path and through the radial gap. Ion manipulation device.

2. The device according to claim 1, wherein the first electrode arrangement extends along one of the pair of curved surfaces, and the second electrode arrangement extends along the other of the pair of curved surfaces.

3. The device according to claim 1, wherein the ion path has a plurality of circumferentially extending segments and a plurality of longitudinally extending segments.

4. The device according to claim 3, wherein the circumferentially extending segments have a first length, the longitudinally extending segments have a second length, and the first length is longer than the second length.

5. The device according to claim 3, wherein the circumferentially extending segments have a first length, the longitudinally extending segments have a second length, and the first length is shorter than the second length.

6. The device according to claim 1, wherein the ion manipulation structure comprises a single coiled structure.

7. The device according to claim 1, wherein the ion manipulation structure comprises a pair of coiled structures.

8. The device according to claim 1, wherein the ion manipulation structure comprises a concentric cylindrical structure.

9. An ion manipulation device, wherein the ion manipulation device comprises a series of radially curved surfaces arranged around a common longitudinal axis, adjacent pairs of the curved surfaces being spaced apart to define respective radial gaps, adjacent pairs of the curved surfaces each comprising a pair of opposing electrode arrangements, each pair of opposing electrode arrangements defining a respective ion path, and configured to induce ions circumferentially through the ion path and through its respective radial gap to another one of the radial gaps. Ion manipulation device.

10. The device according to claim 9, wherein the opposing electrode arrangements of one or more pairs of adjacent curved surfaces define an ion path such that they have a plurality of circumferentially extending segments and a plurality of longitudinally extending segments.

11. The device according to claim 9, wherein the opposing electrode arrangements of one or more pairs of adjacent curved surfaces define an ion path such that they are a helical ion path.

12. The device according to claim 9, wherein each pair of adjacent curved surfaces is a pair of surfaces of a concentric structure.

13. The device according to claim 9, wherein the spacing between the respective curved surfaces of each pair of adjacent curved surfaces is the same.

14. The device according to claim 9, wherein the ion paths are connected so as to form a single continuous ion path.

15. The device according to claim 9, wherein the ion paths of two radial gaps are coupled to each other by an ion escalator configured to direct ions from one of the radial gaps to the other of the radial gaps.

16. The device according to claim 9, further comprising a drift tube electrode arrangement, the drift tube electrode arrangement extending along the common longitudinal axis and configured to direct ions from a first end of the drift tube electrode arrangement to a second end of the drift tube electrode arrangement.

17. The device according to claim 16, wherein one or more pairs of adjacent curved surfaces surround the drift tube electrode arrangement.

18. A method, the method comprising: directing ions through one or more pairs of opposing curved surfaces of a curved ion manipulation structure, each pair of opposing curved surfaces being radially spaced with respect to a common longitudinal axis of the ion manipulation structure to define a radial gap, each pair of opposing curved surfaces comprising a first electrode arrangement and a second electrode arrangement opposing the first electrode arrangement, the first and second electrode arrangements defining an ion path and being configured to direct ions circumferentially along the ion path and through the radial gap of the ion manipulation structure. Method.

19. The method of claim 18, wherein the first and second electrode arrangements of one or more of the pair of opposing curved surfaces define an ion path having a plurality of circumferentially extending segments and a plurality of longitudinally extending segments. **Claim 20** The method of claim 18, wherein the first and second electrode arrangements of one or more of the pair of opposing curved surfaces define a helical ion path. **Claim 21** The method further comprises inducing ions through a drift tube electrode arrangement surrounded by the pair of opposing curved surfaces and extending along the common longitudinal axis, the drift tube electrode arrangement being configured to induce ions from a first end to a second end of the drift tube electrode arrangement. The method according to claim 18. **Claim 22** The method of claim 18, wherein the pair of opposing curved surfaces are defined by a pair of respective concentric structures. **Claim 23** The method of claim 18, wherein the pair of opposing curved surfaces form a single coiled structure. **Claim 24** The method of claim 18, wherein the pair of opposing curved surfaces form a pair of coiled structures.

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