Pixel device, pixel device manufacturing method, and related devices

Abstract

An embodiment of this application provides a pixel device. The pixel device includes an emitting unit, an encapsulation layer, a transition layer, a light-absorbing layer, and a first filter unit. The transition layer is disposed between the encapsulation layer and the first filter unit. The transition layer is in contact with the encapsulation layer and the first filter unit. The light-absorbing layer is disposed on a side of the transition layer that does not face the emitting unit. The light-absorbing layer is disposed around the first filter unit. The light-absorbing layer is in contact with the transition layer and the first filter unit. By disposing the transition layer between the encapsulation layer and the first filter unit and by the transition layer being in contact with the encapsulation layer and the first filter unit, the distance between the emitting unit and the first filter unit can be shortened, the display brightness of the pixel device can be improved, and brightness attenuation at large viewing angles can be reduced. Furthermore, the absence of an additional multi-layer insulating layer between the transition layer and the first filter unit can improve the reliability of the pixel device.

Description

[Technical Field]

[0001] TECHNICAL FIELD Embodiments of this application relate to the field of electronic devices, and mainly relate to pixel devices, pixel device manufacturing methods, display modules, displays, and electronic devices. [Background technology]

[0002] Active-matrix organic light-emitting diode (AMOLED) panels are increasingly being used in displays. However, after external light enters a conventional AMOLED display, it is difficult for the AMOLED display to absorb the reflected light, which is easily reflected back at the user's viewing angle. Therefore, a circular polarizer must be added to the AMOLED display to absorb the reflected light. However, when light emitted by the light-emitting units (e.g., electroluminescence (EL) components) in the AMOLED display passes through the circular polarizer, the light brightness can be reduced by approximately 50%, resulting in a poor user visual experience. Currently, the external reflection function of the polarizer can be internalized by using a color filter on encapsulation (COE) structure. Specifically, there is no need to add a circular polarizer to the AMOLED display; instead, the reflected light is absorbed by the COE structure. Figure 1 shows a comparison between the structures of a conventional AMOLED display and an AMOLED display with a COE structure. Currently, to reduce the thickness of displays, an external touch sensor is sometimes integrated onto the thin film encapsulation (TFE) of an AMOLED display using a touch panel on encapsulation (TOE) structure. If the multiple layers in the TOE structure are all inorganic material layers, peeling or cracking can easily occur when the TOE structure in an AMOLED display is bent or subjected to impact.

[0003] To alleviate the problem of the TOE structure in AMOLED displays being prone to peeling or cracking, currently, some inorganic material layers in the TOE structure are sometimes replaced with organic material layers to improve the reliability of the TOE structure. However, because the organic material layers are thicker than the inorganic material layers, the distance between the light-emitting units (e.g., EL components) in the AMOLED display and the light-emitting surface (e.g., color filters (CFs)) of the AMOLED display becomes longer. As a result, the display brightness and brightness attenuation at large viewing angles are affected.

[0004] Therefore, how to improve the display brightness of a display and reduce the brightness decay at large viewing angles while improving the reliability of the display is an urgent problem to be solved. Summary of the Invention

[0005] Embodiments of the present application provide a pixel device, a manufacturing method for the pixel device, a display module, a display, and an electronic device, for shortening the distance between the light-emitting unit and the first filter unit in the pixel device while improving the reliability of the pixel device, and further improving the display brightness of the pixel device and reducing the brightness attenuation at large viewing angles.

[0006] According to a first aspect, there is provided a pixel device. The pixel device includes an emitting unit, an encapsulation layer, a transition layer, a light absorbing layer, and a first filter unit. The emitting unit is configured to emit light. The encapsulation layer is configured to protect the emitting unit. The transition layer is disposed between the encapsulation layer and the first filter unit. The transition layer is in contact with the encapsulation layer and the first filter unit. The light absorbing layer is disposed on a side of the transition layer that faces away from the emitting unit. The light absorbing layer is disposed around the first filter unit. The light absorbing layer is in contact with the transition layer and the first filter unit.

[0007] In this embodiment of the present application, a transition layer can be disposed between the encapsulation layer and the first filter unit, and the transition layer contacts the encapsulation layer and the first filter unit, thereby shortening the distance between the light-emitting unit and the first filter unit, improving the display brightness of the pixel device, and reducing brightness attenuation at large viewing angles. Furthermore, the absence of an additional multi-layer insulating layer between the transition layer and the first filter unit can improve the reliability of the pixel device. Additionally, in this embodiment of the present application, the thickness of the pixel device can be reduced, and the number of optical masks required in the manufacturing process of the pixel device can be reduced, thereby reducing manufacturing costs.

[0008] Referring to the first aspect, in some implementations of the first aspect, the transition layer does not include a metal component.

[0009] The transition layer in this embodiment of the present application does not include a metal component. Specifically, the transition layer in this embodiment of the present application differs from the inorganic interlayer dielectric (ILD) layer, the organic ILD layer, and the touch panel on encapsulation-overcoating (TOE-OC) layer in the prior art. In addition, in this embodiment of the present application, there is no additional multilayer insulating layer between the first filter unit and the encapsulation layer. Therefore, the distance between the light-emitting unit and the first filter unit can be effectively shortened.

[0010] Referring to the first aspect, in some implementations of the first aspect, the transition layer is an inorganic material layer, in other words, the transition layer includes only inorganic materials.

[0011] Referring to the first embodiment, in some implementations of the first embodiment, when the transition layer is an inorganic material layer, the thickness of the transition layer ranges from 0.25 micrometers to 0.35 micrometers.

[0012] Referring to the first aspect, in some implementations of the first aspect, the transition layer is an organic material layer, in other words, the transition layer includes only organic material.

[0013] Referring to the first embodiment, in some implementations of the first embodiment, when the transition layer is an organic material layer, the thickness of the transition layer ranges from 1 micrometer to 2 micrometers.

[0014] In this embodiment of the present application, only a transition layer is disposed between the encapsulation layer and the first filter unit, and the thickness range of the transition layer is small. In the prior art, an inorganic ILD layer and a TOE-OC layer, or an organic ILD layer and a TOE-OC layer, are further disposed between the transition layer and the first filter unit. The thickness of the inorganic ILD layer is in the range of 0.25 micrometers to 0.35 micrometers. The thickness of the organic ILD layer is in the range of 1 micrometer to 2 micrometers. layer The thickness of the first filter unit is approximately in the range of 2 to 3 micrometers. Specifically, the distance between the light-emitting unit and the first filter unit in this embodiment of the present application is smaller than that in the prior art, resulting in a higher display brightness of the pixel device in this embodiment of the present application.

[0015] Referring to the first aspect, in some implementations of the first aspect, the pixel device further includes a metal component, and some or all of the metal component is disposed in the light absorbing layer and / or the first filter unit.

[0016] In this embodiment of the present application, the metal component can be disposed in the light-absorbing layer and / or the first filter unit, so that there is no need to dispose an additional insulating layer between the light-absorbing layer and the light-emitting unit (in other words, between the first filter unit and the light-emitting unit) in order to dispose the metal component on the insulating layer. Therefore, in this embodiment of the present application, peeling, cracking, or other problems caused by the additional insulating layer can be avoided, thereby improving the reliability of the pixel device. In addition, in this embodiment of the present application, the light-absorbing layer and / or the first filter unit can be reused to shorten the distance between the light-emitting unit and the first filter unit in the pixel device, which can further improve the display brightness of the pixel device and reduce brightness attenuation at large viewing angles. In addition, in this embodiment of the present application, the thickness of the pixel device can be reduced, and the number of optical masks in the manufacturing process of the pixel device can be reduced, thereby reducing manufacturing costs.

[0017] Referring to the first aspect, in some implementations of the first aspect, the metal component includes a first metal layer and a second metal layer, wherein some or all of the first metal layer is disposed within the light absorbing layer and / or the first filter unit, and / or some or all of the second metal layer is disposed within the light absorbing layer and / or the first filter unit.

[0018] Referring to the first embodiment, in some implementations of the first embodiment, the height of the first surface of the first metal layer relative to the light-emitting unit is lower than the first height, the first height is the height of the first surface of the second metal layer relative to the light-emitting unit, the first surface of the first metal layer is the surface of the first metal layer closer to the light-emitting unit, and the first surface of the second metal layer is the surface of the second metal layer closer to the light-emitting unit.

[0019] In this embodiment of the present application, to implement a touch function, the light absorbing layer and / or the first filter unit can be reused, and the first metal layer and the second metal layer are disposed in the light absorbing layer and / or the first filter unit. Thus, there is no need to dispose an additional inorganic insulating layer in the pixel device to dispose the first metal layer and the second metal layer, thereby improving the reliability of the pixel device. In addition, in a manner in which the light absorbing layer and / or the first filter unit are reused, the distance between the first filter unit and the light emitting unit can be shortened, thereby improving the display brightness of the pixel device and reducing the brightness attenuation at large viewing angles.

[0020] Referring to the first aspect, in some implementations of the first aspect, when part or all of the metal component is disposed within the first portion of the first filter unit, the pixel device further includes a second filter unit. The second filter unit is disposed on a side of the first portion of the first filter unit that does not face the light-emitting unit. The second filter unit is in contact with the first portion of the first filter unit. The color of the second filter unit is different from the color of the first filter unit. The first portion of the first filter unit is an edge portion of the first filter unit that is close to the light-absorbing layer.

[0021] In this embodiment of the application, when the metal component is disposed in the first filter unit, a second filter unit can be further disposed to prevent external light from being reflected out of the pixel device after passing through the metal component, thereby improving the user's visual experience.

[0022] Referring to the first aspect, in some implementations of the first aspect, the pixel device further includes a lens, and the lens is disposed on a side of the first filter unit that does not face the light-emitting unit.

[0023] In this embodiment of the present application, a lens can be added to achieve a light focusing effect, so that the axial brightness of the pixel device can be further improved without increasing the power consumption of the pixel device. In addition, the optical distance between the light-emitting unit and the first filter unit in the pixel device in this embodiment of the present application is shortened, so that the brightness attenuation of the pixel device at large viewing angles can be reduced.

[0024] According to a second aspect, a pixel device is provided. The pixel device includes an emitting unit, a connecting layer, a light absorbing layer, a first filter unit, and a metal component. The emitting unit is configured to emit light. The connecting layer is disposed between the emitting unit and the first filter unit. The connecting layer is in contact with the emitting unit and the first filter unit. The light absorbing layer is disposed on a side of the connecting layer that does not face the emitting unit. The light absorbing layer is disposed around the first filter unit. The light absorbing layer is in contact with the first filter unit and the connecting layer. Some or all of the metal component is disposed within the light absorbing layer and / or the first filter unit.

[0025] In this embodiment of the present application, the metal component can be disposed in the light-absorbing layer and / or the first filter unit, so that there is no need to dispose an additional insulating layer between the light-absorbing layer and the light-emitting unit (in other words, between the first filter unit and the light-emitting unit) in order to dispose the metal component on the insulating layer. Therefore, in this embodiment of the present application, peeling, cracking, or other problems caused by the additional insulating layer can be avoided, thereby improving the reliability of the pixel device. In addition, in this embodiment of the present application, the light-absorbing layer and / or the first filter unit can be reused to shorten the distance between the light-emitting unit and the first filter unit in the pixel device, which can further improve the display brightness of the pixel device and reduce brightness attenuation at large viewing angles. In addition, in this embodiment of the present application, the thickness of the pixel device can be reduced, and the number of optical masks in the manufacturing process of the pixel device can be reduced, thereby reducing manufacturing costs.

[0026] Referring to the second aspect, in some implementations of the second aspect, the metal component includes a first metal layer and a second metal layer, wherein some or all of the first metal layer is disposed within the light absorbing layer and / or the first filter unit, and / or some or all of the second metal layer is disposed within the light absorbing layer and / or the first filter unit.

[0027] Referring to the second embodiment, in some implementations of the second embodiment, the height of the first surface of the first metal layer relative to the light-emitting unit is lower than the first height, the first height is the height of the first surface of the second metal layer relative to the light-emitting unit, the first surface of the first metal layer is the surface of the first metal layer closer to the light-emitting unit, and the first surface of the second metal layer is the surface of the second metal layer closer to the light-emitting unit.

[0028] In this embodiment of the present application, to implement a touch function, the light absorbing layer and / or the first filter unit can be reused, and the first metal layer and the second metal layer are disposed in the light absorbing layer and / or the first filter unit. Thus, there is no need to dispose an additional inorganic insulating layer in the pixel device to dispose the first metal layer and the second metal layer, thereby improving the reliability of the pixel device. In addition, in a manner in which the light absorbing layer and / or the first filter unit are reused, the distance between the first filter unit and the light emitting unit can be shortened, thereby improving the display brightness of the pixel device and reducing the brightness attenuation at large viewing angles.

[0029] Referring to the second aspect, in some implementations of the second aspect, when some or all of the metal component is disposed within the first portion of the first filter unit, the pixel device further includes a second filter unit. The second filter unit is disposed on a side of the first portion of the first filter unit that does not face the light-emitting unit. The second filter unit is in contact with the first portion of the first filter unit. The color of the second filter unit is different from the color of the first filter unit. The first portion of the first filter unit is an edge portion of the first filter unit that is close to the light-absorbing layer.

[0030] In this embodiment of the application, when the metal component is disposed in the first filter unit, a second filter unit can be further disposed to prevent external light from being reflected out of the pixel device after passing through the metal component, thereby improving the user's visual experience.

[0031] Referring to the second aspect, in some implementations of the second aspect, the connection layer includes an encapsulation layer and a transition layer. The encapsulation layer is configured to protect the light-emitting unit. The transition layer is disposed between the encapsulation layer and the first filter unit. The transition layer contacts the encapsulation layer, the first filter unit, and the light-absorbing layer.

[0032] In this embodiment of the present application, a transition layer can be disposed between the encapsulation layer and the first filter unit, and the transition layer contacts the encapsulation layer and the first filter unit, thereby shortening the distance between the light-emitting unit and the first filter unit, improving the display brightness of the pixel device, and reducing brightness attenuation at large viewing angles. Furthermore, the absence of an additional multi-layer insulating layer between the transition layer and the first filter unit can improve the reliability of the pixel device. Additionally, in this embodiment of the present application, the thickness of the pixel device can be reduced, and the number of optical masks required in the manufacturing process of the pixel device can be reduced, thereby reducing manufacturing costs.

[0033] Referring to the second embodiment, in some implementations of the second embodiment, the transition layer does not include a metal component.

[0034] The transition layer in this embodiment of the present application does not include a metal component. Specifically, the transition layer in this embodiment of the present application is a layer similar to the inorganic ILD layer, the organic ILD layer, and the TOE-OC layer in the prior art. layer In addition, in this embodiment of the present application, there is no additional insulating layer between the first filter unit and the encapsulation layer, so the distance between the light-emitting unit and the first filter unit can be effectively shortened.

[0035] Referring to the second embodiment, in some implementations of the second embodiment, the transition layer is an inorganic material layer, in other words, the transition layer includes only inorganic materials.

[0036] Referring to the second embodiment, in some implementations of the second embodiment, when the transition layer is an inorganic material layer, the thickness of the transition layer ranges from 0.25 micrometers to 0.35 micrometers.

[0037] Referring to the second aspect, in some implementations of the second aspect, the transition layer is an organic material layer, in other words, the transition layer includes only organic material.

[0038] Referring to the second embodiment, in some implementations of the second embodiment, when the transition layer is an organic material layer, the thickness of the transition layer ranges from 1 micrometer to 2 micrometers.

[0039] In this embodiment of the present application, only a transition layer is disposed between the encapsulation layer and the first filter unit, and the thickness range of the transition layer is small. In the prior art, an inorganic ILD layer and a TOE-OC layer, or an organic ILD layer and a TOE-OC layer, are further disposed between the transition layer and the first filter unit. The thickness of the inorganic ILD layer is in the range of 0.25 micrometers to 0.35 micrometers. The thickness of the organic ILD layer is in the range of 1 micrometer to 2 micrometers. layer The thickness of the first filter unit is approximately in the range of 2 to 3 micrometers. Specifically, the distance between the light-emitting unit and the first filter unit in this embodiment of the present application is smaller than that in the prior art, resulting in a higher display brightness of the pixel device in this embodiment of the present application.

[0040] Referring to the second aspect, in some implementations of the second aspect, the pixel device further includes a lens, and the lens is disposed on a side of the first filter unit that does not face the light-emitting unit.

[0041] In this embodiment of the present application, a lens can be added to achieve a light focusing effect, so that the axial brightness of the pixel device can be further improved without increasing the power consumption of the pixel device. In addition, the optical distance between the light-emitting unit and the first filter unit in the pixel device in this embodiment of the present application is shortened, so that the brightness attenuation of the pixel device at large viewing angles can be reduced.

[0042] According to a third aspect, there is provided a method for manufacturing a pixel device, the method including: forming light-emitting units of a pixel device on a substrate, the light-emitting units configured to emit light; forming an encapsulation layer on a side of the light-emitting units facing away from the substrate, the encapsulation layer configured to protect the light-emitting units; forming a transition layer on the side of the encapsulation layer facing away from the light-emitting units; and forming a light-absorbing layer and a first filter unit on the side of the transition layer facing away from the encapsulation layer, the transition layer in contact with the encapsulation layer and the first filter unit, the light-absorbing layer disposed around the first filter unit, and the light-absorbing layer in contact with the transition layer and the first filter unit.

[0043] In this embodiment of the present application, a transition layer can be disposed between the encapsulation layer and the first filter unit, and the transition layer contacts the encapsulation layer and the first filter unit, thereby shortening the distance between the light-emitting unit and the first filter unit, improving the display brightness of the pixel device, and reducing brightness attenuation at large viewing angles. Furthermore, the absence of an additional multi-layer insulating layer between the transition layer and the first filter unit can improve the reliability of the pixel device. Additionally, in this embodiment of the present application, the thickness of the pixel device can be reduced, and the number of optical masks required in the manufacturing process of the pixel device can be reduced, thereby reducing manufacturing costs.

[0044] Referring to the third aspect, in some implementations of the third aspect, the transition layer does not include a metal component.

[0045] The transition layer in this embodiment of the present application does not include a metal component. Specifically, the transition layer in this embodiment of the present application is a layer similar to the inorganic ILD layer, the organic ILD layer, and the TOE-OC layer in the prior art. layer In addition, in this embodiment of the present application, there is no additional insulating layer between the first filter unit and the encapsulation layer, so the distance between the light-emitting unit and the first filter unit can be effectively shortened.

[0046] Referring to the third aspect, in some implementations of the third aspect, the transition layer is an inorganic material layer, in other words, the transition layer includes only inorganic materials.

[0047] Referring to the third embodiment, in some implementations of the third embodiment, when the transition layer is an inorganic material layer, the thickness of the transition layer ranges from 0.25 micrometers to 0.35 micrometers.

[0048] Referring to the third aspect, in some implementations of the first aspect, the transition layer is an organic material layer, in other words, the transition layer includes only organic material.

[0049] Referring to the third embodiment, in some implementations of the third embodiment, when the transition layer is an organic material layer, the thickness of the transition layer ranges from 1 micrometer to 2 micrometers.

[0050] In this embodiment of the present application, only a transition layer is disposed between the encapsulation layer and the first filter unit, and the thickness range of the transition layer is small. In the prior art, an inorganic ILD layer and a TOE-OC layer, or an organic ILD layer and a TOE-OC layer, are further disposed between the transition layer and the first filter unit. The thickness of the inorganic ILD layer is in the range of 0.25 micrometers to 0.35 micrometers. The thickness of the organic ILD layer is in the range of 1 micrometer to 2 micrometers. layerThe thickness of the first filter unit is approximately in the range of 2 to 3 micrometers. Specifically, the distance between the light-emitting unit and the first filter unit in this embodiment of the present application is smaller than that in the prior art, resulting in a higher display brightness of the pixel device in this embodiment of the present application.

[0051] Referring to the third aspect, in some implementations of the third aspect, a metal component is formed on the side of the transition layer that does not face the encapsulation layer, and some or all of the metal component is disposed within the light absorbing layer and / or the first filter unit.

[0052] In this embodiment of the present application, the metal component can be disposed in the light-absorbing layer and / or the first filter unit, so that there is no need to dispose an additional insulating layer between the light-absorbing layer and the light-emitting unit (in other words, between the first filter unit and the light-emitting unit) in order to dispose the metal component on the insulating layer. Therefore, in this embodiment of the present application, peeling, cracking, or other problems caused by the additional insulating layer can be avoided, thereby improving the reliability of the pixel device. In addition, in this embodiment of the present application, the light-absorbing layer and / or the first filter unit can be reused to shorten the distance between the light-emitting unit and the first filter unit in the pixel device, which can further improve the display brightness of the pixel device and reduce brightness attenuation at large viewing angles. In addition, in this embodiment of the present application, the thickness of the pixel device can be reduced, and the number of optical masks in the manufacturing process of the pixel device can be reduced, thereby reducing manufacturing costs.

[0053] Referring to the third aspect, in some implementations of the third aspect, a first metal layer and a second metal layer are formed on a side of the transition layer that does not face the encapsulation layer, and part or all of the first metal layer is disposed within the light absorbing layer and / or the first filter unit, and / or part or all of the second metal layer is disposed within the light absorbing layer and / or the first filter unit.

[0054] Referring to the third embodiment, in some implementations of the third embodiment, the height of the first surface of the first metal layer relative to the light-emitting units is lower than the first height. The first height is the height of the first surface of the second metal layer relative to the light-emitting units. The first surface of the first metal layer is the surface of the first metal layer closer to the light-emitting units. The first surface of the second metal layer is the surface of the second metal layer closer to the light-emitting units.

[0055] In this embodiment of the present application, to implement a touch function, the light absorbing layer and / or the first filter unit can be reused, and the first metal layer and the second metal layer are disposed in the light absorbing layer and / or the first filter unit. Thus, there is no need to dispose an additional inorganic insulating layer in the pixel device to dispose the first metal layer and the second metal layer, thereby improving the reliability of the pixel device. In addition, in a manner in which the light absorbing layer and / or the first filter unit are reused, the distance between the first filter unit and the light emitting unit can be shortened, thereby improving the display brightness of the pixel device and reducing the brightness attenuation at large viewing angles.

[0056] Referring to the third aspect, in some implementations of the third aspect, a second filter unit is formed on a side of the first portion of the first filter unit that does not face the light-emitting unit. The second filter unit is in contact with the first portion of the first filter unit. The color of the second filter unit is different from the color of the first filter unit. Some or all of the metal component is disposed within the first portion of the first filter unit. The first portion of the first filter unit is an edge portion of the first filter unit that is close to the light-absorbing layer.

[0057] In this embodiment of the application, when the metal component is disposed in the first filter unit, a second filter unit can be further disposed to prevent external light from being reflected out of the pixel device after passing through the metal component, thereby improving the user's visual experience.

[0058] Referring to the third aspect, in some implementations of the third aspect, a lens is formed on the side of the first filter unit that does not face the light emitting unit.

[0059] In this embodiment of the present application, a lens can be added to achieve a light focusing effect, so that the axial brightness of the pixel device can be further improved without increasing the power consumption of the pixel device. In addition, the optical distance between the light-emitting unit and the first filter unit in the pixel device in this embodiment of the present application is shortened, so that the brightness attenuation of the pixel device at large viewing angles can be reduced.

[0060] According to a fourth aspect, there is provided a pixel device manufacturing method, the method comprising: forming light-emitting units of a pixel device on a substrate, the light-emitting units configured to emit light; forming a connecting layer on a side of the light-emitting units facing away from the substrate; and forming a light-absorbing layer, a first filter unit, and a metal component on a side of the connecting layer facing away from the light-emitting units, the connecting layer being in contact with the light-emitting units and the first filter unit, the light-absorbing layer being disposed around the first filter unit, the light-absorbing layer being in contact with the first filter unit and the connecting layer; and some or all of the metal component being disposed within the light-absorbing layer and / or the first filter unit.

[0061] In this embodiment of the present application, the metal component can be disposed in the light-absorbing layer and / or the first filter unit, so that there is no need to dispose an additional insulating layer between the light-absorbing layer and the light-emitting unit (in other words, between the first filter unit and the light-emitting unit) in order to dispose the metal component on the insulating layer. Therefore, in this embodiment of the present application, peeling, cracking, or other problems caused by the additional insulating layer can be avoided, thereby improving the reliability of the pixel device. In addition, in this embodiment of the present application, the light-absorbing layer and / or the first filter unit can be reused to shorten the distance between the light-emitting unit and the first filter unit in the pixel device, which can further improve the display brightness of the pixel device and reduce brightness attenuation at large viewing angles. In addition, in this embodiment of the present application, the thickness of the pixel device can be reduced, and the number of optical masks in the manufacturing process of the pixel device can be reduced, thereby reducing manufacturing costs.

[0062] Referring to the fourth aspect, in some implementations of the fourth aspect, a first metal layer and a second metal layer are formed on the side of the connecting layer that does not face the light-emitting unit, and part or all of the first metal layer is disposed within the light-absorbing layer and / or the first filter unit, and / or part or all of the second metal layer is disposed within the light-absorbing layer and / or the first filter unit.

[0063] Referring to the fourth embodiment, in some implementations of the fourth embodiment, the height of the first surface of the first metal layer relative to the light-emitting units is lower than the first height. The first height is the height of the first surface of the second metal layer relative to the light-emitting units. The first surface of the first metal layer is the surface of the first metal layer closer to the light-emitting units. The first surface of the second metal layer is the surface of the second metal layer closer to the light-emitting units.

[0064] In this embodiment of the present application, to implement a touch function, the light absorbing layer and / or the first filter unit can be reused, and the first metal layer and the second metal layer are disposed in the light absorbing layer and / or the first filter unit. Thus, there is no need to dispose an additional inorganic insulating layer in the pixel device to dispose the first metal layer and the second metal layer, thereby improving the reliability of the pixel device. In addition, in a manner in which the light absorbing layer and / or the first filter unit are reused, the distance between the first filter unit and the light emitting unit can be shortened, thereby improving the display brightness of the pixel device and reducing the brightness attenuation at large viewing angles.

[0065] Referring to the fourth aspect, in some implementations of the fourth aspect, a second filter unit is formed on a side of the first portion of the first filter unit that does not face the light-emitting unit. The second filter unit contacts the first portion of the first filter unit. The color of the second filter unit is different from the color of the first filter unit. Some or all of the metal component is disposed within the first portion of the first filter unit. The first portion of the first filter unit is an edge portion of the first filter unit that is close to the light-absorbing layer.

[0066] In this embodiment of the application, when the metal component is disposed in the first filter unit, a second filter unit can be further disposed to prevent external light from being reflected out of the pixel device after passing through the metal component, thereby improving the user's visual experience.

[0067] Referring to the fourth aspect, in some implementations of the fourth aspect, an encapsulation layer is formed on the side of the light-emitting unit that does not face the substrate, and the encapsulation layer is configured to protect the light-emitting unit, and a transition layer is formed on the side of the encapsulation layer that does not face the substrate, and the transition layer is disposed between the encapsulation layer and the first filter unit, and the transition layer is in contact with the encapsulation layer, the first filter unit, and the light-absorbing layer.

[0068] In this embodiment of the present application, a transition layer can be disposed between the encapsulation layer and the first filter unit, and the transition layer contacts the encapsulation layer and the first filter unit, thereby shortening the distance between the light-emitting unit and the first filter unit, improving the display brightness of the pixel device, and reducing brightness attenuation at large viewing angles. Furthermore, the absence of an additional multi-layer insulating layer between the transition layer and the first filter unit can improve the reliability of the pixel device. Additionally, in this embodiment of the present application, the thickness of the pixel device can be reduced, and the number of optical masks required in the manufacturing process of the pixel device can be reduced, thereby reducing manufacturing costs.

[0069] Referring to the fourth aspect, in some implementations of the fourth aspect, the transition layer does not include a metal component.

[0070] The transition layer in this embodiment of the present application does not include a metal component. Specifically, the transition layer in this embodiment of the present application is a layer similar to the inorganic ILD layer, the organic ILD layer, and the TOE-OC layer in the prior art. layer In addition, in this embodiment of the present application, there is no additional insulating layer between the first filter unit and the encapsulation layer, so the distance between the light-emitting unit and the first filter unit can be effectively shortened.

[0071] Referring to the fourth aspect, in some implementations of the fourth aspect, the transition layer is an inorganic material layer, in other words, the transition layer includes only inorganic materials.

[0072] Referring to the fourth embodiment, in some implementations of the fourth embodiment, when the transition layer is an inorganic material layer, the thickness of the transition layer ranges from 0.25 micrometers to 0.35 micrometers.

[0073] Referring to the fourth aspect, in some implementations of the fourth aspect, the transition layer is an organic material layer, in other words, the transition layer includes only organic material.

[0074] Referring to the fourth embodiment, in some implementations of the fourth embodiment, when the transition layer is an organic material layer, the thickness of the transition layer ranges from 1 micrometer to 2 micrometers.

[0075] In this embodiment of the present application, only a transition layer is disposed between the encapsulation layer and the first filter unit, and the thickness range of the transition layer is small. In the prior art, an inorganic ILD layer and a TOE-OC layer, or an organic ILD layer and a TOE-OC layer, are further disposed between the transition layer and the first filter unit. The thickness of the inorganic ILD layer is in the range of 0.25 micrometers to 0.35 micrometers. The thickness of the organic ILD layer is in the range of 1 micrometer to 2 micrometers. layer The thickness of the first filter unit is approximately in the range of 2 to 3 micrometers. Specifically, the distance between the light-emitting unit and the first filter unit in this embodiment of the present application is smaller than that in the prior art, resulting in a higher display brightness of the pixel device in this embodiment of the present application.

[0076] Referring to the fourth embodiment, in some implementations of the fourth embodiment, a lens is formed on the side of the first filter unit that does not face the light emitting unit.

[0077] In this embodiment of the present application, a lens can be added to achieve a light focusing effect, so that the axial brightness of the pixel device can be further improved without increasing the power consumption of the pixel device. In addition, the optical distance between the light-emitting unit and the first filter unit in the pixel device in this embodiment of the present application is shortened, so that the brightness attenuation of the pixel device at large viewing angles can be reduced.

[0078] According to a fifth aspect, there is provided a pixel module, the pixel module including a plurality of pixel devices according to the first aspect or any one of possible implementations of the first aspect, or a plurality of pixel devices according to the second aspect or any one of possible implementations of the second aspect.

[0079] According to a sixth aspect, there is provided a display module, the display module comprising a plurality of pixel modules according to the fifth aspect.

[0080] According to a seventh aspect, there is provided a display, the display comprising a display module according to the sixth aspect.

[0081] According to an eighth aspect, there is provided an electronic device, the electronic device including a display according to the seventh aspect. [Brief explanation of the drawings]

[0082] [Figure 1] 1 is a diagram of a comparison between the structures of a conventional AMOLED display and an AMOLED display with a COE structure. [Figure 2] FIG. 1 is a schematic cross-sectional view of a pixel device having inorganic TOE and COE structures. [Figure 3] FIG. 1 is a schematic cross-sectional view of a pixel device having an organic TOE and COE structure. [Figure 4] FIG. 1 is a schematic cross-sectional view of a pixel device having an organic TOE, a COE, and a lens. [Figure 5] FIG. 1 is a diagram of a pixel device structure according to one embodiment of the present application. [Figure 6] FIG. 10 is a diagram of a pixel device structure according to another embodiment of the present application. [Figure 7] FIG. 10 is a diagram of a pixel device structure according to another embodiment of the present application. [Figure 8] FIG. 10 is a diagram of a pixel device structure according to another embodiment of the present application. [Figure 9] FIG. 10 is a diagram of a pixel device structure according to another embodiment of the present application. [Figure 10] FIG. 10 is a diagram of a pixel device structure according to another embodiment of the present application. [Figure 11] FIG. 10 is a diagram of a pixel device structure according to another embodiment of the present application. [Figure 12]FIG. 10 is a diagram of a pixel device structure according to another embodiment of the present application. [Figure 13] FIG. 10 is a diagram of a pixel device structure according to another embodiment of the present application. [Figure 14] 1 is an optical simulation diagram of the display luminance of a number of different pixel devices according to an embodiment of the present application. [Figure 15] 1 is a schematic flowchart of a pixel device manufacturing method according to an embodiment of the present application. [Figure 16] 1 is a schematic flowchart of a pixel device manufacturing method according to another embodiment of the present application. [Figure 17] FIG. 2 is a block diagram of the structure of a display module according to one embodiment of the present application. DETAILED DESCRIPTION OF THE INVENTION

[0083] The following describes the technical solutions in the embodiments of this application with reference to the accompanying drawings.

[0084] The technical solutions in the embodiments of this application can be used in various electronic devices with pixel devices, such as watches, mobile phones, tablet computers, smart screens, notebook computers, or desktop computers, but are not limited to the embodiments of this application.

[0085] Figure 1 shows a conventional AMOLED display 1 is a diagram of a comparison between the structures of a conventional AMOLED display 110 and an AMOLED display 120 with a COE structure.

[0086] The conventional AMOLED display 110 includes a glass cover 111, a circular polarizer 112, and an organic light-emitting diode (OLED) panel 113. The glass cover 111 may be configured to protect other structures or components within the display 110, such as the circular polarizer 112 and the OLED panel 113. The circular polarizer 112 is configured to filter or condition light entering the conventional AMOLED display 110 from the outside and absorb light reflected from the OLED panel 113 toward the user's viewing angle to improve the user's visual experience when viewing the screen in situations with strong light. However, when light emitted by the OLED panel 113 passes through the circular polarizer 112, some of the light is also absorbed by the circular polarizer 112. As a result, the brightness of the light entering the user's viewing angle is reduced by approximately 50% compared to the brightness of the light emitted by the OLED panel 113. The OLED panel 113 includes at least one organic light-emitting diode, which may emit light having the same or a different wavelength.

[0087] The AMOLED display 120 with a COE structure includes a glass cover 121, a CF 122, and an OLED panel 123. The glass cover 121 is similar to the glass cover 111, and the OLED panel 123 is similar to the OLED panel 113.

[0088] The CF 122 may include multiple thin films of different colors, such as red (R), green (G), and blue (B). Each thin film of a color filters light of a color other than its own color to present a color image. A light-absorbing material is provided between the thin films. When light is emitted from the outside, the light-absorbing material can absorb a portion of the light emitted from the outside and a portion of the light reflected by the OLED panel 123. Specifically, the light-absorbing material can be used to reduce light reflection. The transmittance of the CF 122 can be improved based on the light-absorbing material and the thin films of different colors. Specifically, for the same power consumption, the CF 122 can enable the AMOLED display 120 with the COE structure to have higher display brightness than the conventional AMOLED display 110, specifically, the light entering at the user's viewing angle is brighter. In other words, for the same display brightness, the CF 122 can enable the AMOLED display 120 with the COE structure to have lower power consumption than the conventional AMOLED display 110.

[0089] 2 is a schematic cross-sectional view of a pixel device having an inorganic TOE and COE structure. The pixel device 200 of FIG. 2 includes a thin film transistor-back panel (TFT-BP) 201, a pixel defining layer (PDL) 202, an EL 203, a first encapsulation layer 204, an organic layer 205, a second encapsulation layer 206, an inorganic transition layer 207, a first metal layer 208, an inorganic ILD layer 209, a second metal layer 210, a TOE-COE, and a TOE-COE. layer 211, a color filter-black matrix CF-BM layer 212, a CF 213, and a color filter on encapsulation-overcoating COE-OC layer 214.

[0090] It should be understood that CF213 in Figure 2 can be a thin film of any color in CF122 in Figure 1. Specifically, Figure 2 uses one thin film in CF122 as an example for purposes of illustration.

[0091] In some embodiments, the pixel device 200 includes any one or more of the following: at least one EL 203, at least one first metal layer 208, at least one second metal layer 210, and at least one CF 213.

[0092] In some embodiments, pixel device 200 includes a light-emitting structure, a thin film encapsulation (TFE) structure, a touch panel (TP) structure, and a CF structure. The TP structure may also be referred to as a TOE structure, and the CF structure may also be referred to as a COE structure. The light-emitting structure may include a TFT-BP 201, a PDL 202, and an EL 203. The TFE structure includes a first encapsulation layer 204, an organic layer 205, and a second encapsulation layer 206. The TP structure includes an inorganic transition layer 207, a first metal layer 208, an inorganic ILD layer 209, a second metal layer 210, and a TOE-OC layer 211. CF structures include CF-BM212, CF213, and COE-OC214.

[0093] The TFT-BP201 is the thin-film transistor-back panel layer of the pixel device 200, and includes the back panel of the pixel device 200, a polyimide (PI) layer, at least one thin-film transistor, and other structures. The thin-film transistor may be configured to drive the EL203 and adjust the voltage input to the EL203 to change the transmission intensity of light emitted by the EL203. The TFT-BP201 is disposed on the bottom layer of a section of the pixel device 200. Specifically, the TFT-BP201 is located on the lowest height layer of the pixel device 200. During actual manufacturing, the height layer where the TFT-BP201 is located is lower than the height layer where the structures other than the TFT-BP201 are located, as shown in FIG. 2 .

[0094] The PDL 202 is a pixel-defining layer of the pixel device 200 and is configured to prevent current leakage and crosstalk between the multiple ELs 203. The PDL 202 includes an organic or inorganic insulating material. The PDL 202 is disposed between the TFT-BP 201 and the first encapsulation layer 204, and can contact the TFT-BP 201 and the first encapsulation layer 204. The PDL 202 is non-conductive. During actual manufacturing, the height layer on which the PDL 202 is located is higher than the height layer on which the TFT-BP 201 is located. The height of the height layer on which the PDL 202 is located can be understood as the height of the PDL 202 relative to the TFT-BP 201.

[0095] The EL203 is a light-emitting component of the pixel device 200 and can be configured to emit light. The EL203 can be disposed between the TFT-BP201 and the first encapsulation layer 204 and can be in contact with the TFT-BP201 and the first encapsulation layer 204. Specifically, the first surface of the EL203 and the first surface of the PDL202 are at the same height as the TFT-BP201, and the EL203 is in contact with the PDL202. The first surface of the EL203 is the surface of the EL203 closer to the TFT-BP201. The first surface of the PDL202 is the surface of the PDL202 closer to the TFT-BP201. During actual manufacturing, the height layer on which the EL203 is located is higher than the height layer on which the TFT-BP201 is located. The height of the height layer on which the EL203 is located can be understood as the height of the EL203 relative to the TFT-BP201.

[0096] The first encapsulation layer 204 is a water blocking layer of the pixel device 200 and is configured to isolate the EL203 from moisture or oxygen that may penetrate therein to protect the EL203. The first encapsulation layer 204 includes an inorganic insulating material. The first encapsulation layer 204 is disposed between the PDL202 and the organic layer 205 and may be in contact with the PDL202 and the organic layer 205. In other words, the first encapsulation layer 204 is disposed between the EL203 and the organic layer 205 and may be in contact with the EL203 and the organic layer 205. During actual manufacturing, the height layer in which the first encapsulation layer 204 is located is higher than the height layer in which the PDL202 and the EL203 are located. The height of the height layer in which the first encapsulation layer 204 is located may be understood as the height of the first encapsulation layer 204 relative to the TFT-BP201.

[0097] The organic layer 205 is a planarization layer of the pixel device 200, configured to perform planarization to facilitate the formation of the second encapsulation layer 206 with good quality and to further prevent the intrusion of steam and oxygen. The organic layer 205 includes an organic insulating material. The organic layer 205 is disposed between the first encapsulation layer 204 and the second encapsulation layer 206, can contact the first encapsulation layer 204 and the second encapsulation layer 206, and is non-conductive. During actual manufacturing, the height layer on which the organic layer 205 is located is higher than the height layer on which the first encapsulation layer 204 is located. The height of the height layer on which the organic layer 205 is located can be understood as the height of the organic layer 205 relative to the TFT-BP 201.

[0098] The second encapsulation layer 206 is a water blocking layer of the pixel device 200 and is configured to further isolate steam or oxygen from penetrating into the EL 203, thereby providing effective protection for the EL 203. The second encapsulation layer 206 includes an inorganic insulating material. The second encapsulation layer 206 is similar to the first encapsulation layer 204. The second encapsulation layer 206 is disposed between the organic layer 205 and the inorganic transition layer 207, can contact the organic layer 205 and the inorganic transition layer 207, and is non-conductive. During actual manufacturing, the height layer where the second encapsulation layer 206 is located is higher than the height layer where the organic layer 205 is located. The height of the height layer where the second encapsulation layer 206 is located can be understood as the height of the second encapsulation layer 206 relative to the TFT-BP 201.

[0099] The inorganic transition layer 207 is a planarization layer of the pixel device 200, configured to perform planarization to facilitate the formation of the first metal layer 208 and the inorganic ILD layer 209 with good quality, and to protect the second encapsulation layer 206. The inorganic transition layer 207 includes an inorganic insulating material. The inorganic transition layer 207 is disposed between the second encapsulation layer 206 and the inorganic ILD layer 209, can be in contact with the second encapsulation layer 206 and the inorganic ILD layer 209, and is non-conductive. In other words, the inorganic transition layer 207 is disposed between the second encapsulation layer 206 and the first metal layer 208, can be in contact with the second encapsulation layer 206 and the first metal layer 208, and is non-conductive. During actual manufacturing, the height layer on which the inorganic transition layer 207 is located is higher than the height layer on which the second encapsulation layer 206 is located. The height of the layer where the inorganic transition layer 207 is located can be understood as the height of the inorganic transition layer 207 relative to the TFT-BP 201.

[0100] The first metal layer 208 is a metal electrode of a touch sensor in the pixel device 200. The first metal layer 208 may be, for example, a metal wiring. The first metal layer 208 is formed by the inorganic transition layer 207 and the TOE-OC layer211. In other words, the first metal layer 208 is disposed within the inorganic ILD layer 209. The first surface of the first metal layer 208 and the first surface of the inorganic ILD layer 209 are at the same height relative to the TFT-BP 201. The first surface of the first metal layer 208 is the surface of the first metal layer 208 that is closer to the inorganic transition layer 207. The first surface of the inorganic ILD layer 209 is the surface of the inorganic ILD layer 209 that is closer to the inorganic transition layer 207. During actual manufacturing, the height layer on which the first metal layer 208 is located is higher than the height layer on which the inorganic transition layer 207 is located. The height of the height layer on which the first metal layer 208 is located can be understood as the height of the first metal layer 208 relative to the TFT-BP 201.

[0101] The inorganic ILD layer 209 is an interlevel dielectric layer of the pixel device 200 and is configured to isolate the first metal layer 208 from the second metal layer 210 to prevent current leakage or interference between the first metal layer 208 and the second metal layer 210. The inorganic ILD layer 209 includes an inorganic insulating material and the first metal layer 208. The insulating material in the inorganic ILD layer 209 may contact the other surface of the first metal layer 208, which is a surface of the first metal layer 208 that is not the first surface. The inorganic ILD layer 209 is formed by insulating the inorganic transition layer 207 and the TOE-OC layer 211, and an inorganic transition layer 207 and a TOE-OC layer 211 and is non-conductive. During actual manufacturing, the height layer on which inorganic ILD layer 209 is located is higher than the height layer on which inorganic transition layer 207 is located. The height of the height layer on which inorganic ILD layer 209 is located can be understood as the height of inorganic ILD layer 209 relative to TFT-BP 201.

[0102] The second metal layer 210 is a metal electrode of a touch sensor in the pixel device 200. The second metal layer 210 may be, for example, a metal wiring. The second metal layer 210 is disposed between the inorganic ILD layer 209 and the CF-BM 212, or the second metal layer 210 is disposed between the inorganic ILD layer 209 and the CF 213. In other words, the second metal layer 210 is disposed between the TOE-OC layer211. The first surface of the second metal layer 210 and the TO E -OC layer The first surface of the second metal layer 210 is the surface of the second metal layer 210 that is closest to the inorganic ILD layer 209. E -OC layer The first surface of 211 is the TO layer closer to the inorganic ILD layer 209. E -OC layer 211. During actual manufacturing, the height layer on which the second metal layer 210 is located is higher than the height layer on which the inorganic ILD layer 209 is located. The height of the height layer on which the second metal layer 210 is located can be understood as the height of the second metal layer 210 relative to the TFT-BP 201.

[0103] TOEIC layer 211 is an overcoating layer of the pixel device 200, which is configured to protect the second metal layer 210 and can also facilitate the formation of CF-BM 212 and CF-CF 213 with good quality. layer 211 includes an organic insulating material and a second metal layer 210. TOE-OC layer The insulating material in 211 may contact the other surface of the second metal layer 210. The other surface of the second metal layer 210 is a surface of the second metal layer 210 that is not the first surface. layer The TOE-OC 211 is disposed between the inorganic ILD layer 209 and the CF-BM 212, can be in contact with the inorganic ILD layer 209 and the CF-BM 212, and is non-conductive. layer 211 is disposed between the inorganic ILD layer 209 and the CF 213, can be in contact with the inorganic ILD layer 209 and the CF 213, and is non-conductive. layer The height layer on which 211 is located is higher than the height layer on which inorganic ILD layer 209 is located. layer The height of the height layer where 211 is located is the TOE-OC layer This can be understood as the height of 211.

[0104] The CF-BM212 is a black matrix layer of the pixel device 200, and is configured to isolate the CFs 213 and prevent color mixing between the CFs 213. The CF-BM212 can also prevent light transmission and prevent light reflection, improving the user's visual experience. The CF-BM212 includes an insulating light-absorbing material. The CF-BM212 is a TOE-OC layer It is located between TOE-OC211 and COE-OC214. layer 211 and COE-OC 214, and is non-conductive. layer The height of the height layer where the CF-BM 212 is located can be understood as the height of the CF-BM 212 relative to the TFT-BP 201.

[0105] The CF213 is a color filter of the pixel device 200, and is configured to allow the light emitted by the EL203 to exit the pixel device 200, and can allow the light to exhibit different colors, such as red (R), green (G), or blue (B). The CF213 includes an insulating material. The CF213 is a TOE-OC layer It is located between TOE-OC211 and COE-OC214. layer The first surface of the CF 213 and the first surface of the CF-BM 212 are at the same height as the TFT-BP 201, and the CF 213 is in contact with the CF-BM 212. The first surface of the CF 213 is in contact with the TOE-OC 211 and the COE-OC 214, and is non-conductive. layer The first surface of CF-BM212 is the surface of CF213 closest to TOE-OC layer The surface of CF-BM212 is closer to CF211. During actual manufacturing, the height layer where CF213 is located is the TOE-OC layer The height of the height layer where CF213 is located can be understood as the height of CF213 relative to TFT-BP201.

[0106] The COE-OC214 is an overcoating layer of the pixel device 200 and is configured to protect the CF-BM212 and CF213. The COE-OC214 includes an insulating material, and the insulating material in the COE-OC214 may contact the second surface of the CF-BM212 and the second surface of the CF213. The second surface of the CF-BM212 is the surface of the CF-BM212 that is farther from the TFT-BP201. The second surface of the CF213 is the surface of the CF213 that is farther from the TFT-BP201. The COE-OC214 is disposed on the sides of the CF-BM212 and CF213 that do not face the TFT-BP201, contacts the CF-BM212 and CF213, and is non-conductive. During actual manufacturing, the height layer on which the COE-OC214 is located is higher than the height layer on which the CF-BM212 and CF213 are located. The height of the height layer where the COE-OC214 is located can be understood as the height of the COE-OC214 relative to the TFT-BP201.

[0107] In some embodiments, pixel device 200 may further include a glass cover, which is similar to glass cover 111 or glass cover 121 in Figure 1, and the details will not be described again here.

[0108] In some embodiments, the organic insulating material may include rubber, resin, plastic, acrylic, and the like.

[0109] In some embodiments, the inorganic insulating material can include materials made primarily using silicon dioxide and silicate compounds of silicon dioxide, or can include materials made using oxides, nitrides, carbides, borides, sulfides, silicides, and various non-metallic compounds through special advanced processes.

[0110] In some embodiments, the thickness of the TFT-BP 201 is approximately in the range of 20 micrometers to 30 micrometers (μm). The thickness of the PDL 202 is approximately in the range of 1.5 micrometers to 2.5 micrometers. The thickness of the EL 203 is approximately in the range of 1.5 micrometers to 2.5 micrometers. Saha, approximately 10 nanometers (nm). The thicknesses of the first encapsulation layer 204 and the second encapsulation layer 206 are in the range of approximately 0.8 micrometers to 1.2 micrometers. The thickness of the organic layer 205 is in the range of approximately 8 micrometers to 12 micrometers. The thicknesses of the inorganic transition layer 207 and the inorganic ILD layer 209 are in the range of approximately 0.25 micrometers to 0.35 micrometers. The thicknesses of the first metal layer 208 and the second metal layer 210 are in the range of approximately 0.25 micrometers to 0.35 micrometers. TOE-OC layer The thickness of CF-BM212 and CF213 is approximately 2 to 3 micrometers. Saha , approximately 1.5 to 2 micrometers Range That is, the thickness of the pixel device 200 ranges from approximately 37.1 micrometers to 55.6 micrometers.

[0111] Because the inorganic transition layer 207 and the inorganic ILD layer 209 of the pixel device 200 both include inorganic insulating materials, the inorganic transition layer 207 and the inorganic ILD layer 209 are prone to peeling and / or cracking when bent and / or impacted. Also, because the pixel device 200 includes a layered structure made of multiple different materials, multiple optical masks are required in actual production and manufacturing, resulting in high production costs.

[0112] 3 is a schematic cross-sectional view of a pixel device having an organic TOE and COE structure. The pixel device 300 in FIG. 3 includes a TFT-BP 301, a PDL 302, an EL 303, a first encapsulation layer 304, an organic layer 305, a second encapsulation layer 306, an organic transition layer 307, a first metal layer 308, an organic ILD layer 309, a second metal layer 310, a TOE-OC layer 311, CF-BM312, CF313, and COE-OC314.

[0113] It should be understood that CF313 in Figure 3 can be any thin film of any color in CF122 in Figure 1. Specifically, Figure 2 uses one thin film in CF122 as an example for purposes of illustration.

[0114] 3, in pixel device 300 of FIG. 3, inorganic transition layer 207 of pixel device 200 of FIG. 2 is replaced with organic transition layer 307, and inorganic ILD layer 209 of pixel device 200 is replaced with organic ILD layer 309. Except for organic transition layer 307 and organic ILD layer 309, the structure of pixel device 300 is similar to that of pixel device 200, and the details will not be described again here.

[0115] The organic transition layer 307 includes an organic insulating material. The purpose and location of the organic transition layer 307 in the pixel device 300 are similar to the purpose and location of the inorganic transition layer 207 in the pixel device 200. The details will not be described again here.

[0116] Organic ILD layer 309 includes an organic insulating material. The purpose and location of organic ILD layer 309 in pixel device 300 is similar to the purpose and location of inorganic ILD layer 209 in pixel device 200. The details will not be described again here.

[0117] In some embodiments, the thickness of the organic transition layer 307 and the organic ILD layer 309 ranges from approximately 1 micrometer to 2 micrometers, i.e., the thickness of the pixel device 300 ranges from approximately 38.6 micrometers to 58.9 micrometers.

[0118] Because the organic transition layer 307 and the organic ILD layer 309 of the pixel device 300 both include organic insulating materials, the organic transition layer 307 and the organic ILD layer 309 are thicker than the inorganic transition layer 207 and the inorganic ILD layer 209. Specifically, the distance between the EL 303 and the COE-OC 314 in the pixel device 300 is longer. As a result, the display brightness of the pixel device 300 may be reduced, and the brightness attenuation of the pixel device 300 at large viewing angles is large. The display brightness of the pixel device 300 is the brightness of the light emitted by the EL 303 and passing through the COE-OC 314.

[0119] 4 is a schematic cross-sectional view of a pixel device having an organic TOE, COE, and lens. The pixel device 400 in FIG. 4 includes a TFT-BP 401, a PDL 402, an EL 403, a first encapsulation layer 404, an organic layer 405, a second encapsulation layer 406, an organic transition layer 407, a first metal layer 408, an organic ILD layer 409, a second metal layer 410, a TOE-OC layer 411, CF-BM 412, CF 413, and lens 414. It can be seen from Fig. 4 that the structure of pixel device 400, except for lens 414, is similar to the structure of pixel device 300 included in Fig. 3, except for COE-OC 314, and the details will not be described again here.

[0120] It should be understood that CF413 in Figure 4 can be any thin film of any color in CF122 in Figure 1. Specifically, Figure 2 uses one thin film in CF122 as an example for purposes of illustration.

[0121] The lens 414 is configured to focus light and can improve the display brightness of the pixel device 400. The lens 414 includes an organic insulating material. The lens 414 is disposed on the side of the CF413 that does not face the TFT-BP401, and the insulating material within the lens 414 can contact the second surface of the CF413. In other words, the insulating material within the lens 414 can contact a portion of the second surface of the CF-BM412 and the second surface of the CF413. The second surface of the CF-BM412 is the surface of the CF-BM412 that is farther from the TFT-BP401. The second surface of the CF413 is the surface of the CF413 that is farther from the TFT-BP401. During actual manufacturing, the height layer on which the lens 414 is located is higher than the height layer on which the CF-BM412 and the CF413 are located. The height of the height layer on which the lens 414 is located can be understood as the height of the lens 414 relative to the TFT-BP401.

[0122] In some embodiments, the thickness of the lens 414 is in the range of approximately 5 micrometers to 10 micrometers, i.e., the thickness of the pixel device 300 is in the range of approximately 41.6 micrometers to 43.9 micrometers.

[0123] Although the lens 414 in FIG. 4 performs a light-focusing function, the lens 414 is likely to cause increased brightness attenuation of the pixel device 400 at large viewing angles. A large viewing angle of the pixel device 400 is a viewing angle of the pixel device 400 that is greater than 30 degrees. The viewing angle of the pixel device 400 includes a horizontal viewing angle and / or a vertical viewing angle. The horizontal viewing angle is the angle at which an image displayed on the pixel device 400 can be viewed from the left or right side, perpendicular to the vertical normal of the pixel device 400. For example, in the schematic cross-sectional view of the pixel device 400 shown in FIG. 4, the vertical normal of the pixel device 400 is perpendicular to the CF 413 and runs through the pixel device 400. The vertical viewing angle is the angle at which an image displayed on the pixel device 400 can be viewed from the top or bottom, perpendicular to the horizontal normal of the pixel device 400. 4, the horizontal normal of the pixel device 400 is in the cross-sectional direction of the pixel device 400. The vertical viewing angle of the pixel device 400 can be the angle of a first included angle, where the first included angle is the included angle between the cross-sectional direction and the maximum direction in which the image displayed on the pixel device 400 can be viewed outside the screen at a height greater than the lens 414. It should be understood that the included angle between the cross-sectional direction and the maximum direction in which the image displayed on the pixel device 400 can be viewed inside the screen at a height greater than the lens 414 is the same as the angle of the first included angle.

[0124] The luminance falloff of pixel device 400 at large viewing angles is the extent of the decrease in the display luminance of pixel device 400 observed from a user's viewing angle at large viewing angles as the user's viewing angle moves from the horizontal or vertical normal to pixel device 400 toward where pixel device 400 is located.

[0125] 5 is a diagram of a structure of a pixel device according to one embodiment of the present application. The pixel device 500 in FIG. 5 includes a light-emitting unit 510, an encapsulation layer 520, a transition layer 530, a first filter unit 540, and a light-absorbing layer 550.

[0126] It should be understood that the first filter unit 540 in Figure 5 can be a thin film of any color in CF 122 in Figure 1. Specifically, Figure 5 uses one first filter unit as an example for explanation.

[0127] The light-emitting unit 510 is configured to emit light. The light-emitting unit 510 is disposed on the bottom layer of the pixel device 500.

[0128] In some embodiments, the light-emitting unit 510 may include an EL component. For example, the light-emitting unit 510 may be similar to the EL203 of the pixel device 200 in Figure 2, the EL303 of the pixel device 300 in Figure 3, the EL403 of the pixel device 400 in Figure 4, the EL603 of the pixel device 600 in Figure 6, or the EL703 of the pixel device 700 in Figure 7. The details will not be described again here.

[0129] In some embodiments, the light-emitting unit 510 may include an EL component and a PDL structure. For example, the light-emitting unit 510 may be similar to the PDL 202 and EL 203 of the pixel device 200 of FIG. 2. Alternatively, the light-emitting unit 510 may be similar to the PDL 302 and EL 303 of the pixel device 300 of FIG. 3. Alternatively, the light-emitting unit 510 may be similar to the PDL 402 and EL 403 of the pixel device 400 of FIG. 4. Alternatively, the light-emitting unit 510 may be similar to the PDL 602 and EL 603 of the pixel device 600 of FIG. 6. Alternatively, the light-emitting unit 510 may be similar to the PDL 702 and EL 703 of the pixel device 700 of FIG. 7.

[0130] In some embodiments, the light-emitting unit 510 may include an EL component, a PDL structure, and a TFT-BP structure. For example, the light-emitting unit 510 may be similar to the TFT-BP 201, PDL 202, and EL 203 of the pixel device 200 of FIG. 2 . Alternatively, the light-emitting unit 510 may be similar to the TFT-BP 301, PDL 302, and EL 303 of the pixel device 300 of FIG. 3 . Alternatively, the light-emitting unit 510 may be similar to the TFT-BP 401, PDL 402, and EL 403 of the pixel device 400 of FIG. 4 . Alternatively, the light-emitting unit 510 may be similar to the TFT-BP 601, PDL 602, and EL 603 of the pixel device 600 of FIG. 6 . Alternatively, the light-emitting unit 510 may be similar to the TFT-BP 701, PDL 702, and EL 703 of the pixel device 700 of FIG. 7 .

[0131] The encapsulation layer 520 is configured to protect the light-emitting unit 510. The encapsulation layer 520 may be disposed between the light-emitting unit 510 and the transition layer 530 and may be in contact with the light-emitting unit 510 and the transition layer 530.

[0132] In some embodiments, encapsulation layer 520 includes a first surface and a second surface. The first surface of encapsulation layer 520 contacts light-emitting unit 510 and the second surface of encapsulation layer 520 contacts transition layer 530.

[0133] In some embodiments, the encapsulation layer 520 may include an organic insulating material and / or an inorganic insulating material, and the encapsulation layer 520 is non-conductive. For example, the encapsulation layer 520 may be made of a resin and / or a silicide. This is not limited to this embodiment of the present application.

[0134] In some embodiments, the encapsulation layer 520 may include the first encapsulation layer 204, the organic layer 205, and the second encapsulation layer 206 of the pixel device 200 of FIG. 2. Alternatively, the encapsulation layer 520 may include the first encapsulation layer 304, the organic layer 305, and the second encapsulation layer 306 of the pixel device 300 of FIG. 3. Alternatively, the encapsulation layer 520 may include the first encapsulation layer 404, the organic layer 405, and the second encapsulation layer 406 of the pixel device 400 of FIG. 4. Alternatively, the encapsulation layer 520 may include the first encapsulation layer 604, the organic layer 605, and the second encapsulation layer 606 of the pixel device 600 of FIG. 6. Alternatively, the encapsulation layer 520 may include the first encapsulation layer 704, the organic layer 705, and the second encapsulation layer 706 of the pixel device 700 of FIG. 7. This is not a limitation in this embodiment of this application.

[0135] Transition layer 530 is disposed between encapsulation layer 520 and first filter unit 540 , such that transition layer 530 contacts encapsulation layer 520 and first filter unit 540 .

[0136] In some embodiments, transition layer 530 includes a first surface and a second surface, the first surface of transition layer 530 contacting encapsulation layer 520 and the second surface of transition layer 530 contacting first filter unit 540.

[0137] In some embodiments, the transition layer 530 does not include any metal components.

[0138] In some embodiments, the transition layer 530 can include an organic or inorganic insulating material, and the transition layer 530 is non-conductive. For example, the transition layer 530 can be made of a resin or a silicide. This is not limited to this embodiment of the application.

[0139] If the transition layer 530 is an inorganic material layer, in other words, if the transition layer 530 includes only inorganic materials, the thickness of the transition layer 530 is in the range of approximately 0.25 micrometers to 0.35 micrometers.

[0140] When the transition layer 530 is an organic material layer, in other words, when the transition layer 530 includes only organic materials, the thickness of the transition layer 530 is approximately in the range of 1 micrometer to 2 micrometers.

[0141] In some embodiments, transition layer 530 may be similar to inorganic transition layer 207 of pixel device 200 of FIG. 2 . Alternatively, transition layer 530 may be similar to organic transition layer 307 of pixel device 300 of FIG. 3 . Alternatively, transition layer 530 may be similar to organic transition layer 407 of pixel device 400 of FIG. 4 . Alternatively, transition layer 530 may be similar to organic transition layer 607 of pixel device 600 of FIG. 6 . Alternatively, transition layer 530 may be similar to organic transition layer 707 of pixel device 700 of FIG. 7 , which is not a limitation in this embodiment of the application.

[0142] The first filter unit 540 is configured to filter the light emitted by the light emitting unit 510 , and the first filter unit 540 contacts the transition layer 530 and the light absorbing layer 550 .

[0143] In some embodiments, the first filter unit 540 includes a first surface, a second surface, and a third surface. The first surface of the first filter unit 540 is a surface of the first filter unit 540 closer to the light-emitting unit 510, and the first surface of the first filter unit 540 contacts the transition layer 530. The second surface of the first filter unit 540 is a surface of the first filter unit 540 farther from the light-emitting unit 510. The third surface of the first filter unit 540 is a surface of the first filter unit 540 closer to the light-absorbing layer 550, and the third surface of the first filter unit 540 contacts the light-absorbing layer 550.

[0144] In some embodiments, the first surface of the first filter unit 540 and the first surface of the light absorbing layer 550 may be at the same height or different heights relative to the light emitting unit 510. This is not limited in this embodiment of this application.

[0145] In some embodiments, the first filter unit 540 includes an organic or inorganic insulating material and is non-conductive. For example, the first filter unit 540 can be made of a resin or a silicide. This is not limited to this embodiment of the present application.

[0146] In some embodiments, the first filter unit 540 may be any one of three primary colors. The three primary colors may be red, green, and blue, or red, yellow, and blue. This is not limited to this embodiment of the present application.

[0147] In some embodiments, the pixel device 500 may include at least one light-emitting unit 510 and at least one first filter unit 540. The at least one light-emitting unit 510 has a one-to-one correspondence with the at least one first filter unit 540. Each first filter unit 540 can be one of three primary colors, so that the white light emitted by the corresponding light-emitting unit 510 can be filtered to change to the color of the first filter unit 540, and a color image can be obtained through mixing through multiple first filter units 540 of different colors.

[0148] In some embodiments, the first filter unit 540 may be similar to the CF 213 of the pixel device 200 of FIG. 2. Alternatively, the first filter unit 540 may be similar to the CF 313 of the pixel device 300 of FIG. 3. Alternatively, the first filter unit 540 may be similar to the CF 413 of the pixel device 400 of FIG. 4. Alternatively, the first filter unit 540 may be similar to the CF 609 of the pixel device 600 of FIG. 6. Alternatively, the first filter unit 540 may be similar to the CF 709 of the pixel device 700 of FIG. 7.

[0149] The light absorbing layer 550 is disposed on the side of the transition layer 530 that does not face the light emitting unit 510, and the light absorbing layer 550 is disposed around the first filter unit 540. The light absorbing layer 550 contacts the transition layer 530 and the first filter unit 540.

[0150] In some embodiments, the light-absorbing layer 550 may include a first surface, a second surface, and a third surface. The first surface of the light-absorbing layer 550 is the surface of the light-absorbing layer 550 closer to the light-emitting unit 510, and the first surface of the light-absorbing layer 550 contacts the transition layer 530. The second surface of the light-absorbing layer 550 is the surface of the light-absorbing layer 550 farther from the light-emitting unit 510. The third surface of the light-absorbing layer 550 is the surface of the light-absorbing layer 550 closer to the first filter unit 540, and the third surface of the light-absorbing layer 550 contacts the first filter unit 540.

[0151] In some embodiments, part or all of the third surface of light absorbing layer 550 may be in contact with first filter unit 540, or alternatively, the third surface of light absorbing layer 550 may not be in contact with first filter unit 540. This is not a limitation in this embodiment of the application.

[0152] In some embodiments, the first surface of the light-absorbing layer 550 and the first surface of the first filter unit 540 are at the same height relative to the light-emitting unit 510. In other words, the first surface of the light-absorbing layer 550 and the first surface of the first filter unit 540 are located at the same height.

[0153] In some embodiments, the height of the first surface of the light-absorbing layer 550 relative to the light-emitting unit 510 is greater than the height of the first filter unit 540 relative to the light-emitting unit 510. First surface of Alternatively, the height of the first surface of the light absorbing layer 550 relative to the light emitting unit 510 is higher than the height of the first filter unit 540 relative to the light emitting unit 510. First surface of This is not a limitation in this embodiment of this application.

[0154] In some embodiments, the light absorbing layer 550 can include an organic or inorganic light absorbing material, and the light absorbing layer 550 is non-conductive. For example, the light absorbing layer 550 can be made of chromium, nickel, resin, or silicide. This is not limited to this embodiment of the application.

[0155] When the light-absorbing layer 550 includes a metal component, the light-absorbing material in the light-absorbing layer 550 can be a composite material including a photoresist, a resin, a light-blocking dye, and other ingredients. The light-blocking dye is used to color the light-absorbing material so that it absorbs reflected light. The light-blocking dye can be, for example, a black light-blocking dye or a dark-colored light-blocking dye. The photoresist is used to protect the metal component and can isolate steam or oxygen that may enter the metal component during fabrication of the pixel device 500, preventing the metal component from being corroded by the steam or oxygen. The resin can be used as an adhesive.

[0156] In some embodiments, the light absorbing layer 550 can be black. Alternatively, the light absorbing layer 550 can be a deep gray, other dark colors, or the like, although this is not a limitation in this embodiment of the application.

[0157] In some embodiments, the pixel device 500 may include at least one first filter unit 540. The light absorbing layer 550 may be configured to isolate the first filter units 540 and prevent color crossover between the first filter units 540. Specifically, the light absorbing layer 550 may be disposed between the first filter units 540. The light absorbing layer 550 may be further configured to prevent light transmission and light reflection.

[0158] In some embodiments, light absorbing layer 550 may be similar to CF-BM 212 of pixel device 200 of FIG. 2. Alternatively, light absorbing layer 550 may be similar to CF-BM 312 of pixel device 300 of FIG. 3. Alternatively, light absorbing layer 550 may be similar to CF-BM 412 of pixel device 400 of FIG. 4. Alternatively, light absorbing layer 550 may be similar to CF-BM 608 of pixel device 600 of FIG. 6. Alternatively, light absorbing layer 550 may be similar to CF-BM 708 of pixel device 700 of FIG. 7.

[0159] Optionally, pixel device 500 may further include a metal component, all or part of which is disposed in first filter unit 540 and / or light absorbing layer 550, as shown in any of the pixel devices of Figures 8 to 13.

[0160] In some embodiments, the metal component may include a first metal layer and a second metal layer, with some or all of the first metal layer disposed within first filter unit 540 and / or light absorbing layer 550, and / or some or all of the second metal layer disposed within first filter unit 540 and / or light absorbing layer 550.

[0161] In some embodiments, the height of the first surface of the first metal layer relative to the light-emitting unit 510 is less than the first height, which is the height of the first surface of the second metal layer relative to the light-emitting unit 510. The first surface of the first metal layer is the surface of the first metal layer closer to the light-emitting unit 510. The first surface of the second metal layer is the surface of the second metal layer closer to the light-emitting unit 510.

[0162] When some or all of the metal components are disposed within the first portion of the first filter unit 540, the pixel device 500 may further include a second filter unit. The second filter unit is disposed on a side of the first portion of the first filter unit 540 that does not face the light-emitting unit 510, and the second filter unit is in contact with the first portion of the first filter unit 540. The color of the second filter unit is different from the color of the first filter unit 540. The first portion of the first filter unit 540 is an edge portion of the first filter unit that is close to the light-absorbing layer 550.

[0163] In some embodiments, the metal component may be similar to the first metal layer 208 and / or the second metal layer 210 of the pixel device 200 of Figure 2. Alternatively, the metal component may be similar to the first metal layer 308 and / or the second metal layer 310 of the pixel device 300 of Figure 3. Alternatively, the metal component may be similar to the first metal layer 408 and / or the second metal layer 410 of the pixel device 400 of Figure 4. Alternatively, the metal component may be similar to the metal component 850 of the pixel device 800 of Figure 8. Alternatively, the metal component may be similar to the metal component 950 of the pixel device 900 of Figure 9.

[0164] Optionally, the pixel device 500 may further include a lens, which is disposed on the side of the first filter unit 540 that faces away from the light-emitting unit 510.

[0165] In some embodiments, the height of the first surface of the lens relative to the light-emitting unit 510 is greater than the second height, which is the height of the first surface of the first filter unit 540 relative to the light-emitting unit 510. The first surface of the lens is the surface of the lens closer to the light-emitting unit 510. In addition, the height of the first surface of the lens relative to the light-emitting unit 510 is greater than the height of the first surface of the light-absorbing layer 550 relative to the light-emitting unit 510.

[0166] In some embodiments, the first surface of the lens contacts part or all of the second surface of first filter unit 540. Alternatively, the first surface of the lens contacts part of the second surface of light absorbing layer 550 and part or all of the second surface of first filter unit 540.

[0167] In some embodiments, an insulating material may be provided between the first surface of the lens and the second surface of the first filter unit 540, and the insulating material may be configured to protect the first filter unit 540. Specifically, the first surface of the lens may be in partial contact or no contact at all with the second surface of the first filter unit 540. Similarly, the first surface of the lens may be in partial contact or no contact at all with a portion of the second surface of the light absorbing layer 550 and the second surface of the first filter unit 540.

[0168] In some embodiments, the lens may include an organic or inorganic insulating material, and the lens is non-conductive. For example, the lens may be made of a resin or a silicide. This is not a limitation in this embodiment of the application.

[0169] In some embodiments, the pixel device 500 may include at least one first filter unit 540 and at least one lens, wherein the at least one first filter unit 540 has a one-to-one correspondence with the at least one lens, and each lens may be configured to assist the corresponding first filter unit 540 in focusing light.

[0170] In some embodiments, the lens may be similar to lens 414 of pixel device 400 in Figure 4, or may be similar to lens 710 in Figure 7, although this is not a limitation in this embodiment of the application.

[0171] In some embodiments, the pixel device 500 may include any one or more of the following: at least one light-emitting unit 510, at least one first filter unit 540, at least one metal component, and at least one lens.

[0172] In the pixel device 500, a transition layer can be disposed between the encapsulation layer and the first filter unit, and the transition layer can contact the first filter unit, thereby shortening the distance between the light-emitting unit and the first filter unit, thereby improving the display brightness of the pixel device and reducing brightness attenuation at large viewing angles. Furthermore, the absence of an additional multi-layer insulating layer between the transition layer and the first filter unit can improve the reliability of the pixel device. In addition, this embodiment of the present application can reduce the thickness of the pixel device 500 and the number of optical masks required in the manufacturing process of the pixel device 500, thereby reducing manufacturing costs.

[0173] 6 is a diagram of a pixel device structure according to one embodiment of the present application. The pixel device 600 in FIG. 6 includes a TFT-BP 601, a PDL 602, an EL 603, a first encapsulation layer 604, an organic layer 605, a second encapsulation layer 606, an organic transition layer 607, a CF-BM 608, a CF 609, and a COE-OC 610.

[0174] It should be understood that CF 609 in Figure 6 can be any thin film of any color in CF 122 in Figure 1. Specifically, Figure 6 uses one thin film in CF 122 as an example for purposes of illustration.

[0175] In some embodiments, the pixel device 600 includes at least one EL 603 and / or at least one CF 609.

[0176] In some embodiments, pixel device 600 includes a light-emitting structure, a TFE structure, and a CF+TP structure. The CF+TP structure is sometimes referred to as a COE+TOE structure. The light-emitting structure includes a TFT-BP 601, a PDL 602, and an EL 603. The TFE structure includes a first encapsulation layer 604, an organic layer 605, and a second encapsulation layer 606. The CF+TP structure includes an organic transition layer 607, a CF-BM 608, a CF 609, and a COE-OC 610.

[0177] In some embodiments, the TFT-BP 601, the PDL 602, the EL 603, the first encapsulation layer 604, the organic layer 605, and the second encapsulation layer 606 are similar in structure to the pixel device 200 of Figure 2, the pixel device 300 of Figure 3, or the pixel device 400 of Figure 4. The details will not be described again here.

[0178] In some embodiments, the EL603 can be the light-emitting unit 510 of the pixel device 500 of Figure 5. Alternatively, the PDL602 and the EL603 can be the light-emitting unit 510 of Figure 5. Alternatively, the TFT-BP601, the PDL602, and the EL603 can be the light-emitting unit 510 of Figure 5. This is not a limitation in this embodiment of the application.

[0179] In some embodiments, the first encapsulation layer 604, the organic layer 605, and the second encapsulation layer 606 may be the encapsulation layer 520 of the pixel device 500 of FIG.

[0180] In some embodiments, organic transition layer 607 is similar to organic transition layer 307 in pixel device 300, organic transition layer 407 in pixel device 400, or transition layer 530 in pixel device 500, and the details will not be described again here.

[0181] In some embodiments, the CF-BM 608 is a black matrix layer in the pixel device 600 and is disposed between the organic transition layer 607 and the COE-OC 610. The CF-BM 608 is disposed around the CF 609, and the CF-BM 608 can be in contact with the organic transition layer 607 and the COE-OC 610, and can also be in contact with the CF 609. The CF-BM 608 is non-conductive. The CF-BM 608 includes a light-absorbing material. During actual manufacturing, the height layer in which the CF-BM 608 is located is higher than the height layer in which the organic transition layer 607 is located. The height of the height layer in which the CF-BM 608 is located can be understood as the height of the CF-BM 608 relative to the TFT-BP 601.

[0182] In some embodiments, CF-BM 608 may be similar to CF-BM 212 in pixel device 200, CF-BM 312 in pixel device 300, CF-BM 412 in pixel device 400, light absorbing layer 550 in pixel device 500, or CF-BM 708 in pixel device 700, and the details will not be described again here.

[0183] In some embodiments, the CF 609 is a color filter of the pixel device 600. The CF 609 is disposed between the organic transition layer 607 and the COE-OC 610. A first surface of the CF 609 and a first surface of the CF-BM 608 are at the same height as the TFT-BP 601. The CF 609 can be in contact with the insulating material in the organic transition layer 607 and the insulating material in the COE-OC 610, and can also be in contact with the light-absorbing material in the CF-BM 608. The CF 609 includes an insulating material and is non-conductive. During actual manufacturing, the height layer in which the CF 609 is located is higher than the height layer in which the organic transition layer 607 is located. The height of the height layer in which the CF 609 is located can be understood as the height of the CF 609 relative to the TFT-BP 601.

[0184] In some embodiments, CF609 may be similar to CF213 in pixel device 200, CF313 in pixel device 300, CF413 in pixel device 400, first filter unit 540 in pixel device 500, or CF709 in pixel device 700, and the details will not be described again here.

[0185] In some embodiments, COE-OC 610 may be similar to COE-OC 214 in pixel device 200 or COE-OC 314 in pixel device 300. The details will not be described again here.

[0186] In the pixel device 600, an organic transition layer 607 can be disposed between the second encapsulation layer 606 and the CF 609. The organic transition layer 607 contacts the CF 609, thereby shortening the distance between the EL 603 and the CF 609, thereby improving the display brightness of the pixel device 600 and reducing the brightness attenuation at large viewing angles. Furthermore, the absence of an additional multilayer insulating layer (e.g., an organic or inorganic ILD layer or a TOE-OC layer) between the organic transition layer 607 and the CF 609 can improve the reliability of the pixel device. Additionally, in this embodiment of the present application, the thickness of the pixel device 600 can be reduced, and the number of optical masks can be reduced in the manufacturing process of the pixel device 600, thereby reducing manufacturing costs.

[0187] In some embodiments, the thickness of the TFT-BP601 is in the range of approximately 20 micrometers to 30 micrometers. The thickness of the PDL602 is in the range of approximately 1.5 micrometers to 2.5 micrometers. The thickness of the EL603 is Saha, approximately 10 nanometers (nm). The thicknesses of the first encapsulation layer 604 and the second encapsulation layer 606 are approximately in the range of 0.8 micrometers to 1.2 micrometers. The thickness of the organic layer 605 is approximately in the range of 8 micrometers to 12 micrometers. The thickness of the organic transition layer 607 is approximately in the range of 1 micrometer to 2 micrometers. The thicknesses of the CF-BM 608 and CF 609 are approximately in the range of 1.5 micrometers to 2 micrometers. The thickness of the COE-OC 610 is approximately in the range of 2 micrometers to 3 micrometers. That is, the thickness of the pixel device 600 is approximately in the range of 35.6 micrometers to 53.9 micrometers.

[0188] In some embodiments, the distance between the EL 603 and the CF 609 in the pixel device 600 is in the range of approximately 12.6 micrometers to 18.9 micrometers. Compared to the thickness of the pixel device 300, the thickness of the pixel device 600 can be reduced by approximately 3 micrometers to 5 micrometers.

[0189] In some embodiments, the light output efficiency of the pixel device 600 at large viewing angles may be improved by approximately 10%. A large viewing angle of the pixel device 600 is a viewing angle greater than 30 degrees, specifically, a viewing angle where the angle between the vertical or horizontal normal to the pixel device 600 and the direction in which the pixel device 600 is located is greater than 30 degrees. The light output efficiency of the pixel device 600 at large viewing angles may be the integral of the display luminance curve of the pixel device 600 within the large viewing angle range. For example, the light output efficiency of the pixel device 600 at large viewing angles is the integral of L1410 at viewing angles ranging from 30 to 90 degrees in FIG. 14. As can be seen from FIG. 14, the integral of L1410 at viewing angles ranging from 30 to 90 degrees is increased by approximately 5% compared to the integral of L1430. L1430 is the display luminance curve of the pixel device 300. The viewing angle in FIG. 14 is the angle from the vertical or horizontal normal to one side of the pixel device. Therefore, at large viewing angles on the other side of the pixel device, the integral of L1410 at viewing angles in the range of 30 to 90° increases by about 5% compared to the integral of L1430, i.e., the light output efficiency of the pixel device 600 at large viewing angles can be improved by about 10%.

[0190] In some embodiments, one or two optical masks may be eliminated in the fabrication of pixel device 600, reducing manufacturing costs.

[0191] 7 is a diagram of a pixel device structure according to another embodiment of the present application. The pixel device 700 of FIG. 7 includes all the structures of the pixel device 600 of FIG. 6 except for the COE-OC 610, and a lens 710. Specifically, the TFT-BP 701, PDL 702, EL 703, first encapsulation layer 704, organic layer 705, second encapsulation layer 706, organic transition layer 707, CF-BM 708, and CF 709 included in the pixel device 700 are similar to the corresponding structures in the pixel device 600. The details will not be described again here.

[0192] It should be understood that CF709 in Figure 7 can be any thin film of any color in CF122 in Figure 1. Specifically, Figure 7 uses one thin film in CF122 as an example for purposes of illustration.

[0193] In some embodiments, the pixel device 700 includes any one or more of the following: at least one EL 703, at least one CF 709, and at least one lens 710.

[0194] In some embodiments, the pixel device 700 includes a light-emitting structure, a TFE structure, and a CF+TP+lens. The CF+TP+lens may also be referred to as a COE+TOE+lens. The light-emitting structure includes a TFT-BP 701, a PDL 702, and an EL 703. The TFE structure includes a first encapsulation layer 704, an organic layer 705, and a second encapsulation layer 706. The CF+TP + Lens The structure includes an organic transition layer 707 , a CF-BM 708 , a CF 709 , and a lens 710 .

[0195] In some embodiments, the lens 710 may be configured to focus light. The height of the lens 710 relative to the TFT-BP701 is greater than the heights of the CF-BM708 and CF709 relative to the TFT-BP701. The lens 710 includes an organic insulating material. The lens 710 is disposed on the side of the CF709 that does not face the TFT-BP701, and the insulating material within the lens 710 may contact the second surface of the CF709. In other words, the insulating material within the lens 710 may contact a portion of the second surface of the CF-BM708 and the second surface of the CF709. During actual manufacturing, the height layer on which the lens 710 is located is higher than the height layer on which the CF-BM708 and CF709 are located. The height of the height layer on which the lens 710 is located may be understood as the height of the lens 710 relative to the TFT-BP701.

[0196] In some embodiments, lens 710 may be similar to lens 414 in pixel device 400 or lens in pixel device 500, and the details will not be described again here.

[0197] In some embodiments, the thickness of the lens 710 is in the range of approximately 5 micrometers to 10 micrometers, i.e., the thickness of the pixel device 700 is in the range of approximately 38.6 micrometers to 60.9 micrometers.

[0198] Based on the advantages of pixel device 600, a lens 710 is added to pixel device 700 to achieve a light focusing effect, so that the axial brightness of pixel device 700 can be further improved without increasing the power consumption of pixel device 700. The axial brightness of pixel device 700 is the display brightness in the horizontal normal direction or vertical normal direction of pixel device 700. In addition, the optical distance between EL 703 and CF 709 in pixel device 700 is shortened, so that the brightness attenuation of pixel device 700 at large viewing angles is reduced.

[0199] 8 is a diagram of a structure of a pixel device according to one embodiment of the present application. The pixel device 800 in FIG. 8 includes a light-emitting unit 810, a connecting layer 820, a first filter unit 830, a light-absorbing layer 840, and a metal component 850.

[0200] The light-emitting unit 810 is configured to emit light. The light-emitting unit 810 is similar to the light-emitting unit 510 of the pixel device 500. The details will not be described again here.

[0201] The connecting layer 820 is disposed between the light-emitting unit 810 and the first filter unit 830 , and the connecting layer 820 contacts the light-emitting unit 810 and the first filter unit 830 .

[0202] In some embodiments, the connecting layer 820 includes a first surface and a second surface, the first surface of the connecting layer 820 contacting the light-emitting unit 810, and the second surface of the connecting layer 820 contacting the first filter unit 830 and the light-absorbing layer 840.

[0203] In some embodiments, the connection layer 820 can include an organic insulating material and / or an inorganic insulating material, and the connection layer 820 is non-conductive. For example, the connection layer 820 can be made of a resin and / or a silicide. This is not limited in this embodiment of the application.

[0204] In some embodiments, connecting layer 820 may include first encapsulation layer 204, organic layer 205, second encapsulation layer 206, and inorganic transition layer 207 of pixel device 200 of Figure 2. Alternatively, connecting layer 820 may include first encapsulation layer 304, organic layer 305, second encapsulation layer 306, and organic transition layer 307 of pixel device 300 of Figure 3. Alternatively, connecting layer 820 may include first encapsulation layer 404, organic layer 405, second encapsulation layer 406, and organic transition layer 407 of pixel device 400 of Figure 4. Alternatively, connecting layer 820 may include encapsulation layer 520 and transition layer 530 of pixel device 500 of Figure 5. Alternatively, the connecting layer 820 may include the first encapsulation layer 604, the organic layer 605, the second encapsulation layer 606, and the organic transition layer 607 of the pixel device 600 in Figure 6. Alternatively, the connecting layer 820 may include the first encapsulation layer 704, the organic layer 705, the second encapsulation layer 706, and the organic transition layer 707 of the pixel device 700 in Figure 7, which is not limited in this embodiment of the application.

[0205] In some embodiments, the connecting layer 820 may include an encapsulation layer and a transition layer. The encapsulation layer is configured to protect the light-emitting unit 810. The encapsulation layer is disposed between the light-emitting unit 810 and the transition layer, and the encapsulation layer is in contact with the light-emitting unit 810 and the transition layer. The transition layer is disposed between the encapsulation layer and the first filter unit 830, and the transition layer is in contact with the encapsulation layer, the first filter unit 830, and the light-absorbing layer 840.

[0206] If the connecting layer 820 includes a transition layer, the transition layer does not include a metal component.

[0207] In some embodiments, the transition layer comprises an organic or inorganic insulating material. When the transition layer comprises an inorganic material, the thickness of the transition layer ranges from 0.25 micrometers to 0.35 micrometers. When the transition layer comprises an organic material, the thickness of the transition layer ranges from 1 micrometer to 2 micrometers.

[0208] In some embodiments, the encapsulation layer is similar to encapsulation layer 520 in pixel device 500. The transition layer is similar to transition layer 530 in pixel device 500.

[0209] The first filter unit 830 is disposed on the side of the connecting layer 820 that faces away from the light-emitting unit 810, and the first filter unit 830 is in contact with the connecting layer 820 and the light-absorbing layer 840. The first filter unit 830 is similar to the first filter unit 540 in the pixel device 500.

[0210] The light-absorbing layer 840 is disposed on the side of the connecting layer 820 that faces away from the light-emitting units 810. The light-absorbing layer 840 is disposed around the first filter unit 830, and the light-absorbing layer 840 is in contact with the first filter unit 830 and the connecting layer 820. The light-absorbing layer 840 is similar to the light-absorbing layer 550 in the pixel device 500.

[0211] Some or all of the metal component 850 is disposed within the light absorbing layer 840 and / or the first filter unit 830 .

[0212] It should be understood that Fig. 8 uses an example in which all of the metal component 850 is disposed in the light absorbing layer 840 for illustration purposes. Fig. 9 uses an example in which all of the metal component 950 is disposed in the first filter unit 930 for illustration purposes. Alternatively, a first portion of the metal component may be disposed in the first filter unit, and a second portion of the metal component may be disposed in the light absorbing layer. This is not a limitation in this embodiment of the present application.

[0213] In the following, an example in which all of the metal components 850 are disposed within the light absorbing layer 840 is used for illustration.

[0214] In some embodiments, metal component 850 can include at least one surface, and each of the at least one surface can be in contact with light-absorbing material in light-absorbing layer 840. Alternatively, one or more of the at least one surface cannot be in contact with light-absorbing material in light-absorbing layer 840. This is not a limitation in this embodiment of the application.

[0215] For example, the first surface of the metal component 850 and the first surface of the light-absorbing layer 840 are at the same height relative to the light-emitting unit 810. Specifically, the first surface of the metal component 850 does not contact the light-absorbing material in the light-absorbing layer 840. The first surface of the metal component 850 is the surface of the metal component 850 closer to the light-emitting unit 810. Alternatively, the height of the first surface of the metal component 850 relative to the light-emitting unit 810 is higher than the height of the first surface of the light-absorbing layer 840 relative to the light-emitting unit 810. Specifically, the first surface of the metal component 850 contacts the light-absorbing material in the light-absorbing layer 840. Alternatively, the height of the first surface of the metal component 850 relative to the light-emitting unit 810 is lower than the height of the first surface of the light-absorbing layer 840 relative to the light-emitting unit 810. Specifically, the first surface of the metal component 850 does not contact the light-absorbing material in the light-absorbing layer 840. This is not a limitation in this embodiment of the present application.

[0216] For example, the height of the second surface of the metal component 850 relative to the light-emitting unit 810 is lower than the height of the second surface of the light-absorbing layer 840 relative to the light-emitting unit 810. Specifically, the second surface of the metal component 850 contacts the light-absorbing material in the light-absorbing layer 840. The second surface of the metal component 850 is the surface of the metal component 850 that is farther from the light-emitting unit 810. Alternatively, the second surface of the metal component 850 and the second surface of the light-absorbing layer 840 are at the same height relative to the light-emitting unit 810. Specifically, the second surface of the metal component 850 does not contact the light-absorbing material in the light-absorbing layer 840. Alternatively, the height of the second surface of the metal component 850 relative to the light-emitting unit 810 is higher than the height of the second surface of the light-absorbing layer 840 relative to the light-emitting unit 810. Specifically, the second surface of the metal component 850 does not contact the light-absorbing material in the light-absorbing layer 840. This is not a limitation of this embodiment of the present application.

[0217] For example, the third surface of the metal component 850 is in direct contact with the first filter unit 830. Specifically, the third surface of the metal component 850 is not in contact with the light absorbing material in the light absorbing layer 840. The third surface of the metal component 850 is a surface of the metal component 850 that is close to the first filter unit 830. Alternatively, the third surface of the metal component 850 is not in contact with the first filter unit 830. Specifically, the third surface of the metal component 850 is in contact with the light absorbing material in the light absorbing layer 840. This is not a limitation in this embodiment of the application.

[0218] In some embodiments, metal component 850 can include a first metal layer and a second metal layer. Some or all of the first metal layer can be located within first filter unit 830 and / or light absorbing layer 840. Some or all of the second metal layer can be located within first filter unit 830 and / or light absorbing layer 840.

[0219] In some embodiments, the height of the first surface of the first metal layer relative to the light-emitting units is less than the first height, which is the height of the first surface of the second metal layer relative to the light-emitting units. The first surface of the first metal layer is the surface of the first metal layer closest to the light-emitting units. The first surface of the second metal layer is the surface of the second metal layer closest to the light-emitting units.

[0220] In some embodiments, the height of the second surface of the first metal layer is lower than the height of the first surface of the second metal layer. The second surface of the first metal layer is the surface of the first metal layer farther from the light-emitting unit 810. The height of the second surface of the first metal layer can be understood as the height of the second surface of the first metal layer relative to the light-emitting unit 810. The height of the first surface of the second metal layer can be understood as the height of the first surface of the second metal layer relative to the light-emitting unit 810. Alternatively, the height of the second surface of the first metal layer is higher than the height of the first surface of the second metal layer. Alternatively, the height of the second surface of the first metal layer is the same as the height of the first surface of the second metal layer. This is not a limitation in this embodiment of the present application.

[0221] In some embodiments, the first metal layer and the second metal layer may be electrically connected, specifically, the first metal layer and the second metal layer are electrically connected to each other.

[0222] In some embodiments, a light absorbing material is provided between the first metal layer and the second metal layer in light absorbing layer 840. Specifically, the first metal layer and the second metal layer are non-conductive to each other.

[0223] In some embodiments, the first metal layer and the second metal layer can include at least one surface, and each of the at least one surface can be in contact with the light-absorbing material in light-absorbing layer 840. Alternatively, one or more of the at least one surface cannot be in contact with the light-absorbing material in light-absorbing layer 840. This is not a limitation in this embodiment of the application.

[0224] For example, the first surface of the first metal layer and the first surface of the light-absorbing layer 840 are at the same height relative to the light-emitting units 810. Specifically, the first surface of the first metal layer does not contact the light-absorbing material in the light-absorbing layer 840. The first surface of the first metal layer is the surface of the first metal layer closer to the light-emitting units 810. Alternatively, the height of the first surface of the first metal layer relative to the light-emitting units 810 is higher than the height of the first surface of the light-absorbing layer 840 relative to the light-emitting units 810. Specifically, the first surface of the first metal layer contacts the light-absorbing material in the light-absorbing layer 840. Alternatively, the height of the first surface of the first metal layer relative to the light-emitting units 810 is lower than the height of the first surface of the light-absorbing layer 840 relative to the light-emitting units 810. Specifically, the first surface of the first metal layer does not contact the light-absorbing material in the light-absorbing layer 840. This is not a limitation in this embodiment of the present application.

[0225] For example, the height of the second surface of the second metal layer relative to the light-emitting unit 810 is lower than the height of the second surface of the light-absorbing layer 840 relative to the light-emitting unit 810. Specifically, the second surface of the second metal layer contacts the light-absorbing material in the light-absorbing layer 840. The second surface of the second metal layer is the surface of the second metal layer farther from the light-emitting unit 810. Alternatively, the second surface of the second metal layer and the second surface of the light-absorbing layer 840 are at the same height relative to the light-emitting unit 810. Specifically, the second surface of the second metal layer does not contact the light-absorbing material in the light-absorbing layer 840. Alternatively, the height of the second surface of the second metal layer relative to the light-emitting unit 810 is higher than the height of the second surface of the light-absorbing layer 840 relative to the light-emitting unit 810. Specifically, the second surface of the second metal layer does not contact the light-absorbing material in the light-absorbing layer 840. This is not a limitation in this embodiment of the present application.

[0226] For example, the third surface of the first metal layer and / or the third surface of the second metal layer may be in direct contact with the first filter unit 830. Specifically, the third surface of the first metal layer and / or the third surface of the second metal layer may not be in contact with the light absorbing material in the light absorbing layer 840. The third surface of the first metal layer and / or the third surface of the second metal layer may be a surface of the first metal layer and / or a surface of the second metal layer that is close to the first filter unit 830. Alternatively, the third surface of the first metal layer and / or the third surface of the second metal layer may not be in contact with the first filter unit 830. Specifically, the third surface of the first metal layer and / or the third surface of the second metal layer may be in contact with the light absorbing material in the light absorbing layer 840. This is not a limitation in this embodiment of the present application.

[0227] In some embodiments, metal component 850 can be a metal trace. When metal component 850 includes a first metal layer and a second metal layer, the first metal layer and the second metal layer can be metal traces.

[0228] In some embodiments, metal component 850 may be similar to first metal layer 208 and / or second metal layer 210 of pixel device 200 of FIG. 2. Alternatively, metal component 850 may be similar to first metal layer 308 and / or second metal layer 310 of pixel device 300 of FIG. 3. Alternatively, metal component 850 may be similar to first metal layer 408 and / or second metal layer 410 of pixel device 400 of FIG. 4. Alternatively, metal component 850 may be similar to the metal component of pixel device 500 of FIG. 5. Alternatively, metal component 850 may be similar to first metal layer 1008 and / or second metal layer 1009 of pixel device 1000 of FIG. 10. Alternatively, metal component 850 may be similar to first metal layer 1208 and / or second metal layer 1209 of pixel device 1200 of FIG. 12.

[0229] Metal Components 850includes a first metal layer and a second metal layer, the first metal layer can be similar to first metal layer 208 in pixel device 200, first metal layer 308 in pixel device 300, first metal layer 408 in pixel device 400, first metal layer 1008 in pixel device 1000, or first metal layer 1208 in pixel device 1200, and the second metal layer can be similar to second metal layer 210 in pixel device 200, second metal layer 310 in pixel device 300, second metal layer 410 in pixel device 400, second metal layer 1009 in pixel device 1000, or second metal layer 1209 in pixel device 1200.

[0230] In some embodiments, the pixel device 800 may further include a lens, which is disposed on the side of the first filter unit 830 that faces away from the light-emitting unit 810.

[0231] In some embodiments, the height of the first surface of the lens relative to the light-emitting unit 810 is greater than the second height, which is the height of the first surface of the first filter unit 830 relative to the light-emitting unit 810. The first surface of the lens is the surface of the lens closer to the light-emitting unit 810. In addition, the height of the first surface of the lens relative to the light-emitting unit 810 is greater than the height of the first surface of the light-absorbing layer 840 relative to the light-emitting unit 810.

[0232] In some embodiments, the first surface of the lens contacts part or all of the second surface of first filter unit 830. Alternatively, the first surface of the lens contacts part of the second surface of light absorbing layer 840 and part or all of the second surface of first filter unit 830.

[0233] In some embodiments, an insulating material may be provided between the first surface of the lens and the second surface of first filter unit 830, and the insulating material may be configured to protect first filter unit 830. Specifically, the first surface of the lens may be in partial contact or no contact at all with the second surface of first filter unit 830. Similarly, the first surface of the lens may be in partial contact or no contact at all with a portion of the second surface of light absorbing layer 840 and the second surface of first filter unit 830.

[0234] In some embodiments, the lens may include an organic or inorganic insulating material, and the lens is non-conductive. For example, the lens may be made of a resin or a silicide. This is not a limitation in this embodiment of the application.

[0235] In some embodiments, pixel device 800 may include at least one first filter unit 830 and at least one lens, wherein the at least one first filter unit 830 has a one-to-one correspondence with the at least one lens, and each lens may be configured to assist the corresponding first filter unit 830 in focusing light.

[0236] In some embodiments, the lens may be similar to lens 414 of pixel device 400 in Figure 4, lens 710 in Figure 7, or lens 1212 in Figure 12. This is not a limitation in this embodiment of the application.

[0237] In some embodiments, the pixel device 800 may include any one or more of the following: at least one light-emitting unit 810, at least one first filter unit 830, at least one metal component 850, and at least one lens.

[0238] In the pixel device 800, the metal component 850 can be disposed within the light-absorbing layer 840, such that an additional multi-layer insulating layer (e.g., TOE-OCT in FIGS. 2-4) is not required between the light-absorbing layer 840 and the light-emitting unit 810 to dispose the metal component 850 on the insulating layer. layer In the pixel device 800, there is no need to dispose an organic or inorganic ILD layer (and an organic or inorganic ILD layer). Therefore, peeling, cracking, or other problems caused by an inorganic ILD layer can be avoided, and the reliability of the pixel device 800 is improved. In addition, in the pixel device 800, the light-absorbing layer 840 can be reused to shorten the optical distance between the light-emitting unit 810 and the first filter unit 830 in the pixel device 800, which can further improve the brightness of the light emitted by the pixel device 800 and reduce the brightness attenuation at large viewing angles. In addition, in this embodiment of the present application, the thickness of the pixel device 800 can be reduced, and the number of optical masks can be reduced in the manufacturing process of the pixel device 800, thereby reducing manufacturing costs.

[0239] 9 is a diagram of a structure of a pixel device according to one embodiment of the present application. The pixel device 900 in FIG. 9 includes a light-emitting unit 910, a connecting layer 920, a first filter unit 930, a light-absorbing layer 940, a metal component 950, and a second filter unit 960.

[0240] The light-emitting unit 910, the connecting layer 920, the first filter unit 930, and the light-absorbing layer 940 in the pixel device 900 are similar to the corresponding structures in the pixel device 800. The details will not be described again here.

[0241] All or a portion of metal component 950 is disposed within a first portion of first filter unit 930. The first portion of first filter unit 930 is an edge portion of first filter unit 930 that is close to light absorbing layer 940.

[0242] In some embodiments, metal component 950 can include at least one surface, and each of the at least one surface can contact an insulating material in first filter unit 930. Alternatively, one or more of the at least one surface cannot contact an insulating material in first filter unit 930. This is not a limitation in this embodiment of the application.

[0243] For example, the first surface of the metal component 950 and the first surface of the first filter unit 930 are at the same height relative to the light-emitting unit 910. Specifically, the first surface of the metal component 950 does not contact the insulating material in the first filter unit 930. The first surface of the metal component 950 is the surface of the metal component 950 that is closer to the light-emitting unit 910. Alternatively, the height of the first surface of the metal component 950 relative to the light-emitting unit 910 is higher than the height of the first surface of the first filter unit 930 relative to the light-emitting unit 910. Specifically, the first surface of the metal component 950 contacts the insulating material in the first filter unit 930. Alternatively, the height of the first surface of the metal component 950 relative to the light-emitting unit 910 is lower than the height of the first surface of the first filter unit 930 relative to the light-emitting unit 910. Specifically, the first surface of the metal component 950 does not contact the insulating material in the first filter unit 930. This is not a limitation in this embodiment of the present application.

[0244] For example, the height of the second surface of the metal component 950 relative to the light-emitting unit 910 is lower than the height of the second surface of the first filter unit 930 relative to the light-emitting unit 910. Specifically, the second surface of the metal component 950 contacts the insulating material in the first filter unit 930. The second surface of the metal component 950 is the surface of the metal component 950 that is farther from the light-emitting unit 910. Alternatively, the second surface of the metal component 950 and the second surface of the first filter unit 930 are at the same height relative to the light-emitting unit 910. Specifically, the second surface of the metal component 950 does not contact the insulating material in the first filter unit 930. Alternatively, the height of the second surface of the metal component 950 relative to the light-emitting unit 910 is higher than the height of the second surface of the first filter unit 930 relative to the light-emitting unit 910. Specifically, the second surface of the metal component 950 does not contact the insulating material in the first filter unit 930. This is not a limitation of this embodiment of the present application.

[0245] For example, the third surface of the metal component 950 is in direct contact with the light absorbing layer 940. Specifically, the third surface of the metal component 950 is not in contact with the insulating material in the first filter unit 930. The third surface of the metal component 950 is a surface of the metal component 950 that is close to the light absorbing layer 940. Alternatively, the third surface of the metal component 950 is not in contact with the light absorbing layer 940. Specifically, the third surface of the metal component 950 is in contact with the insulating material in the first filter unit 930. This is not a limitation in this embodiment of the application.

[0246] In some embodiments, metal component 950 can include a first metal layer and a second metal layer. Some or all of the first metal layer can be located within first filter unit 930 and / or light absorbing layer 940. Some or all of the second metal layer can be located within first filter unit 930 and / or light absorbing layer 940.

[0247] In some embodiments, the height of the first surface of the first metal layer relative to the light-emitting units is less than the first height, which is the height of the first surface of the second metal layer relative to the light-emitting units. The first surface of the first metal layer is the surface of the first metal layer closest to the light-emitting units. The first surface of the second metal layer is the surface of the second metal layer closest to the light-emitting units.

[0248] In some embodiments, the first metal layer and the second metal layer may be electrically connected, specifically, the first metal layer and the second metal layer are electrically connected to each other.

[0249] In some embodiments, an insulating material is provided between the first metal layer and the second metal layer in the first filter unit 930. Specifically, the first metal layer and the second metal layer are not electrically conductive with each other.

[0250] In some embodiments, the positional relationship between the first metal layer and the second metal layer is similar to the positional relationship between the first metal layer and the second metal layer in pixel device 800. The details will not be described again here.

[0251] In some embodiments, the positional relationship between the first metal layer and the first filter unit 930 is similar to the positional relationship between the first metal layer and the light absorbing layer 840 in pixel device 800. The details will not be described again here. The positional relationship between the second metal layer and the first filter unit 930 is similar to the positional relationship between the second metal layer and the light absorbing layer 840 in pixel device 800. The details will not be described again here.

[0252] In some embodiments, metal component 950 can be a metal trace. When metal component 950 includes a first metal layer and a second metal layer, the first metal layer and the second metal layer can be metal traces.

[0253] The second filter unit 960 is disposed on the first portion of the first filter unit 930 on a side that does not face the light-emitting unit 910. The second filter unit 960 contacts the first portion of the first filter unit 930, and the color of the second filter unit 960 is different from the color of the first filter unit 930.

[0254] In some embodiments, second filter unit 960 can be in contact with first filter unit 930 and light absorbing layer 940 .

[0255] In some embodiments, the second filter unit 960 can include an organic or inorganic insulating material and is non-conductive. For example, the second filter unit 960 can be made of a resin or a silicide. This is not a limitation in this embodiment of the present application. The insulating material included in the second filter unit 960 can be the same as or different from the insulating material included in the first filter unit 930. This is not a limitation in this embodiment of the present application.

[0256] In some embodiments, the pixel device 900 may include at least one first filter unit 930 and at least one second filter unit 960. The at least one first filter unit 930 has a one-to-one correspondence with the at least one second filter unit 960. Each first filter unit 930 may be one of three primary colors, and the corresponding second filter unit 960 may be one of the other two of the three primary colors, thereby preventing external light from being reflected outside the pixel device 900 by the metal component 950.

[0257] In the pixel device 900, the metal component 950 can be disposed in the first filter unit 930, so that an additional multi-layer insulating layer (e.g., TOE-OC in FIGS. 2 to 4 ) is not required between the light-absorbing layer 940 and the light-emitting unit 910 to place the metal component 950 on the insulating layer. layerIn the pixel device 900, there is no need to dispose an organic or inorganic ILD layer (and an organic or inorganic ILD layer). Therefore, peeling, cracking, or other problems caused by an inorganic ILD layer can be avoided, and the reliability of the pixel device 900 is improved. In addition, in the pixel device 900, the first filter unit 930 can be reused to shorten the optical distance between the light-emitting unit 910 and the first filter unit 930 in the pixel device 900, which can further improve the brightness of the light emitted by the pixel device 900 and reduce the brightness attenuation at large viewing angles. In addition, in this embodiment of the present application, the thickness of the pixel device 900 can be reduced, and the number of optical masks can be reduced in the manufacturing process of the pixel device 900, thereby reducing manufacturing costs.

[0258] 10 is a diagram of a pixel device structure according to another embodiment of the present application. The pixel device 1000 in FIG. 10 includes a TFT-BP 1001, a PDL 1002, an EL 1003, a first encapsulation layer 1004, an organic layer 1005, a second encapsulation layer 1006, an organic transition layer 1007, a first metal layer 1008, a second metal layer 1009, a CF-BM 1010, a CF 1011, and a COE-OC 1012. In other words, the pixel device 1000 includes all the structures of the pixel device 600, as well as the first metal layer 1008 and the second metal layer 1009.

[0259] The TFT-BP 1001, PDL 1002, EL 1003, first encapsulation layer 1004, organic layer 1005, second encapsulation layer 1006, organic transition layer 1007, CF-BM 1010, CF 1011, and COE-OC 1012 are similar to the corresponding structures in pixel device 600, and will not be described in detail again here.

[0260] In some embodiments, the first metal layer 1008 is a metal electrode of a touch sensor in the pixel device 1000. The first metal layer 1008 is disposed in the CF-BM 1010. A first surface of the first metal layer 1008 contacts the organic transition layer 1007. Specifically, the first surface of the first metal layer 1008 and the first surface of the CF-BM 1010 are at the same height as the TFT-BP 1001. Specifically, the first surface of the first metal layer 1008 does not contact the light-absorbing material in the CF-BM 1010, and the surfaces of the first metal layer 1008 other than the first surface contact the light-absorbing material in the CF-BM 1010. During actual manufacturing, the height layer on which the first metal layer 1008 is located is higher than the height layer on which the organic transition layer 1007 is located. The height of the height layer where the first metal layer 1008 is located can be understood as the height of the first metal layer 1008 relative to the TFT-BP1001.

[0261] In some embodiments, the second metal layer 1009 is a metal electrode of a touch sensor in the pixel device 1000. The second metal layer 1009 is disposed within the CF-BM 1010, and each surface of the second metal layer 1009 contacts a light-absorbing material within the CF-BM 1010. During actual manufacturing, the height layer on which the second metal layer 1009 is located is higher than the height layer on which the first metal layer 1008 is located. The height of the height layer on which the second metal layer 1009 is located can be understood as the height of the second metal layer 1009 relative to the TFT-BP 1001.

[0262] In some embodiments, first metal layer 1008 may be similar to first metal layer 208 in pixel device 200, first metal layer 308 in pixel device 300, first metal layer 408 in pixel device 400, or first metal layer in pixel device 800. The details will not be described again here.

[0263] In some embodiments, second metal layer 1009 may be similar to second metal layer 210 in pixel device 200, second metal layer 310 in pixel device 300, second metal layer 410 in pixel device 400, or second metal layer in pixel device 800. The details will not be described again here.

[0264] In some embodiments, the first metal layer 1008 can be the metal component 850 of the pixel device 800 of Figure 8. Alternatively, the second metal layer 1009 can be the metal component 850 of the pixel device 800 of Figure 8. Alternatively, the first metal layer 1008 and the second metal layer 1009 can be the metal component 850 of the pixel device 800 of Figure 8. This is not a limitation in this embodiment of the application.

[0265] In the pixel device 1000, the first metal layer 1008 and the second metal layer 1009 can be disposed within the CF-BM 1010. There is no need to place an inorganic or organic ILD layer between the CF-BM 1010 and the EL 1003 to place the first metal layer 1008, and there is no need to place an inorganic or organic ILD layer between the CF-BM 1010 and the EL 1003 to place the second metal layer 1009. layer 1011 in the pixel device 1000, the CF-BM 1010 can be reused to shorten the optical distance between the EL 1003 and the CF 1011 in the pixel device 1000, and the brightness of the light emitted by the pixel device 1000 can be further improved and the brightness attenuation at large viewing angles can be reduced. In addition, in this embodiment of the application, the thickness of the pixel device 1000 can be reduced, and the number of optical masks can be reduced in the manufacturing process of the pixel device 1000, thereby reducing manufacturing costs.

[0266] FIG. 11 is a diagram of a pixel device structure according to another embodiment of the present application. The pixel device 1100 of FIG. 11 includes all of the components of the pixel device 1000, plus a CF 1112. Specifically, the pixel device 1100 includes a TFT-BP 1101, a PDL 1102, an EL 1103, a first encapsulation layer 1104, an organic layer 1105, a second encapsulation layer 1106, an organic transition layer 1107, a first metal layer 1108, a second metal layer 1109, a CF-BM 1110, a CF 1111, a CF 1112, and a COE-OC 1113. The structure of the pixel device 1100, except for the first metal layer 1108, the second metal layer 1109, and the CF 1112, is similar to the corresponding structure in the pixel device 1000.

[0267] The first metal layer 1108 is a metal electrode of the touch sensor in the pixel device 1100. The first metal layer 1108 is disposed within a first portion of the CF 1111, which is an edge portion of the CF 1111 near the CF-BM 1110. A first surface of the first metal layer 1108 contacts the organic transition layer 1107. Specifically, the first surface of the first metal layer 1108 and the first surface of the CF 1111 are at the same height as the TFT-BP 1101. Specifically, the first surface of the first metal layer 1108 does not contact the insulating material within the CF 1111, and the surfaces of the first metal layer 1108 other than the first surface contact the insulating material within the CF 1111. During actual manufacturing, the height layer on which the first metal layer 1108 is located is higher than the height layer on which the organic transition layer 1107 is located. The height of the height layer where the first metal layer 1108 is located can be understood as the height of the first metal layer 1108 relative to the TFT-BP1101.

[0268] The second metal layer 1109 is a metal electrode of the touch sensor in the pixel device 1100. The second metal layer 1109 is disposed within a first portion of the CF 1111, which is an edge portion of the CF 1111 near the CF-BM 1110. Each surface of the second metal layer 1109 contacts an insulating material within the CF 1111. During actual manufacturing, the height layer on which the second metal layer 1109 is located is higher than the height layer on which the first metal layer 1108 is located. The height of the height layer on which the second metal layer 1109 is located can be understood as the height of the second metal layer 1109 relative to the TFT-BP 1101.

[0269] In some embodiments, first metal layer 1108 may be similar to first metal layer 208 in pixel device 200, first metal layer 308 in pixel device 300, first metal layer 408 in pixel device 400, or first metal layer in pixel device 900. The details will not be described again here.

[0270] In some embodiments, second metal layer 1109 may be similar to second metal layer 210 in pixel device 200, second metal layer 310 in pixel device 300, second metal layer 410 in pixel device 400, or second metal layer in pixel device 900. The details will not be described again here.

[0271] In some embodiments, the first metal layer 1108 can be the metal component 950 of the pixel device 900 of Figure 9. Alternatively, the second metal layer 1109 can be the metal component 950 of the pixel device 900 of Figure 9. Alternatively, the first metal layer 1108 and the second metal layer 1109 can be the metal component 950 of the pixel device 900 of Figure 9. This is not a limitation in this embodiment of the application.

[0272] CF1112 is disposed on the side of the first portion of CF1111 that does not face the light-emitting unit and is in contact with the first portion of CF1111. CF1112 may further be in contact with CF-BM1110. The first portion of CF1111 is an edge portion of CF1111 that is close to CF-BM1110. During actual manufacturing, the height layer on which CF1112 is located is higher than the height layer on which CF1111 is located. The height of the height layer on which CF1112 is located can be understood as the height of CF1112 relative to TFT-BP1101.

[0273] In some embodiments, CF1 112 is similar to the second filter unit 960 in pixel device 900.

[0274] In pixel device 1100, first metal layer 1108 and second metal layer 1109 can be disposed within CF 1111. No inorganic or organic ILD layer is required between CF 1111 and EL 1103 to dispose first metal layer 1108, and no TOE-OC ILD layer is required to dispose second metal layer 1109. layer 1103 and CF 1111 in the pixel device 1100, the pixel device 1100 can be formed on the substrate 1102. Therefore, peeling, cracking, or other problems caused by the inorganic ILD layer can be avoided in the pixel device 1100, improving the reliability of the pixel device 1100. Furthermore, in the pixel device 1100, the CF 1111 can be reused to shorten the optical distance between the EL 1103 and the CF 1111 in the pixel device 1100, which can further improve the brightness of the light emitted by the pixel device 1100 and reduce the brightness attenuation at large viewing angles. In addition, in this embodiment of the application, the thickness of the pixel device 1100 can be reduced, and the number of optical masks can be reduced in the manufacturing process of the pixel device 1100, thereby reducing the manufacturing cost.

[0275] 12 is a diagram of a pixel device structure according to another embodiment of the present application. The pixel device 1200 of FIG. 12 includes all of the structures of the pixel device 1000 except for the COE-OC 1012, and a lens 1212. Specifically, the pixel device 1200 includes a TFT-BP 1201, a PDL 1202, an EL 1203, a first encapsulation layer 1204, an organic layer 1205, a second encapsulation layer 1206, an organic transition layer 1207, a first metal layer 1208, a second metal layer 1209, a CF-BM 1210, a CF 1211, and a lens 1212. The structure of the pixel device 1200, except for the lens 1212, is similar to the corresponding structure in the pixel device 1000.

[0276] The lens 1212 may be configured to focus light. The height of the lens 1212 relative to the TFT-BP1201 is greater than the heights of the CF-BM1210 and the CF1211 relative to the TFT-BP1201. The lens 1212 includes an organic insulating material. The lens 1212 is disposed on the side of the CF1211 that does not face the TFT-BP1201, and the insulating material within the lens 1212 may contact the second surface of the CF1211. In other words, the insulating material within the lens 1212 may contact a portion of the second surface of the CF-BM1210 and the second surface of the CF1211. During actual manufacturing, the height layer on which the lens 1212 is located is higher than the height layers on which the CF-BM1210 and the CF1211 are located. The height of the height layer on which the lens 1212 is located may be understood as the height of the lens 1212 relative to the TFT-BP1201.

[0277] In some embodiments, lens 1212 may be similar to lens 414 in pixel device 400 or lens 710 in pixel device 700, and the details will not be described again here.

[0278] In some embodiments, the thickness of the lens 1212 is in the range of approximately 5 micrometers to 10 micrometers, i.e., the thickness of the pixel device 1200 is in the range of approximately 38.6 micrometers to 60.9 micrometers.

[0279] Based on the advantages of pixel device 1000, a lens 1212 is added to pixel device 1200 to achieve a light focusing effect, so that the axial brightness of pixel device 1200 can be further improved without increasing the power consumption of pixel device 1200. In addition, the optical distance between EL 1203 and CF 1211 in pixel device 1200 is shortened, so that the brightness attenuation of pixel device 1200 at large viewing angles is reduced.

[0280] 13 is a diagram of a pixel device structure according to one embodiment of the present application. Pixel device 1300 in FIG. 13 includes all of the structures of pixel device 1100 except for COE-OC 1113, and lens 1313. Specifically, pixel device 1300 includes TFT-BP 1301, PDL 1302, EL 1303, first encapsulation layer 1304, organic layer 1305, second encapsulation layer 1306, organic transition layer 1307, first metal layer 1308, second metal layer 1309, CF-BM 1310, CF 1311, CF 1312, and lens 1313. The structure of pixel device 1300, except for lens 1313, is similar to the corresponding structure in pixel device 1100.

[0281] The lens 1313 may be configured to focus light. The height of the lens 1313 relative to the TFT-BP1301 is greater than the heights of the CF-BM1310, CF1311, and CF1312 relative to the TFT-BP1301. The lens 1313 includes an organic insulating material. The lens 1313 is disposed on the side of the CF1311 that does not face the TFT-BP1301, and the insulating material within the lens 1313 may contact the second surface of the CF1311. In other words, the insulating material within the lens 1313 may contact a portion of the second surface of the CF-BM1310, the second surface of the CF1311, and a portion of the surface of the CF1312. During actual manufacturing, the height layer on which the lens 1313 is located is higher than the height layers on which the CF-BM1310, CF1311, and CF1312 are located. The height of the height layer where the lens 1313 is located can be understood as the height of the lens 1313 relative to the TFT-BP 1301.

[0282] In some embodiments, lens 1313 may be lens 414 in pixel device 400, lens 710 in pixel device 700, or lens 1200. 1212 The details will not be described again here.

[0283] Based on the advantages of pixel device 1100, a lens 1313 is added to pixel device 1300 to achieve a light focusing effect, so that the axial brightness of pixel device 1300 can be further improved without increasing the power consumption of pixel device 1300. In addition, the optical distance between EL 1303 and CF 1311 in pixel device 1300 is shortened, so that the brightness attenuation of pixel device 1300 at large viewing angles is reduced.

[0284] FIG. 14 is an optical simulation diagram of the display luminance of several different pixel devices according to one embodiment of the present application. FIG. 14 includes L1410, L1420, and L1430. In FIG. 14, the abscissa is the viewing angle, and the ordinate is the display luminance. L1410 represents the display luminance curve of the pixel device 1200 of FIG. 12 at different viewing angles. L1420 represents the display luminance curve of the pixel device 400 of FIG. 4 at different viewing angles. L1430 represents the display luminance curve of the pixel device 300 of FIG. 3 at different viewing angles.

[0285] 14, at a viewing angle of 0 degrees, the display brightness of L1410 is close to that of L1420, and is higher than that of L1430. Specifically, the axial brightness of pixel device 1200 is better than that of pixel device 300, and is close to that of pixel device 400.

[0286] 14, when the viewing angle is greater than 30 degrees, the display luminance of L1410 is higher than that of L1420 and that of L1430. Specifically, the display luminance of pixel device 1200 at large viewing angles is better than that of pixel device 300 and that of pixel device 400 at large viewing angles.

[0287] 14 further shows that when the viewing angle is greater than 30 degrees, the slope of L1410 is small, while the slopes of L1420 and L1430 are large. Specifically, the display luminance of L1410 decreases slightly with increasing viewing angle, while the display luminance of L1420 and L1430 decrease significantly with increasing viewing angle. Specifically, the luminance attenuation of pixel device 1200 at large viewing angles is smaller than the luminance attenuation of pixel device 300 and pixel device 400 at large viewing angles.

[0288] 15 is a schematic flow chart of a pixel device manufacturing method according to one embodiment of the present application. The method of FIG. 15 includes the following steps:

[0289] S1510: Forming a light-emitting unit of a pixel device on a substrate.

[0290] The light-emitting unit of the pixel device may be disposed on the substrate, that is, disposed on the lowest level layer, specifically, the level layer where the light-emitting unit is located is lower than the level layer where the encapsulation layer, the transition layer, the light-absorbing layer, and the first filter unit are located.

[0291] Optionally, the light-emitting unit may be configured to emit light. The light-emitting unit may include an EL component, or may include an EL component and a PDL, or may include an EL component, a PDL, and a TFT-BP. This is not limited in this embodiment of the present application. The light-emitting unit may be similar to the light-emitting unit 510 in FIG. 5.

[0292] S1520: Form an encapsulation layer on the side of the light-emitting unit that does not face the substrate.

[0293] The encapsulation layer is disposed on the side of the light-emitting unit facing away from the substrate, and the insulating material of the encapsulation layer can be in contact with the light-emitting unit and the transition layer.

[0294] Optionally, an encapsulation layer can protect the light-emitting unit, and the encapsulation layer can comprise an organic or inorganic insulating material. The encapsulation layer can be similar to encapsulation layer 520 of the pixel device of FIG.

[0295] S1530: Form a transition layer on the side of the encapsulation layer that faces away from the light-emitting unit.

[0296] The transition layer is disposed on the side of the encapsulation layer that faces away from the light-emitting unit, and the insulating material of the transition layer can be in contact with the encapsulation layer and the first filter unit. Specifically, the transition layer is disposed between the encapsulation layer and the first filter unit.

[0297] Optionally, the transition layer does not include a metal component.

[0298] Optionally, the transition layer is similar to transition layer 530 of the pixel device of FIG.

[0299] S1540: Form a light absorbing layer and a first filter unit on the side of the transition layer that does not face the encapsulation layer.

[0300] The light absorbing layer is disposed on a side of the transition layer that faces away from the encapsulation layer. The light absorbing layer is disposed around the first filter unit, and the light absorbing layer is in contact with the transition layer and the first filter unit.

[0301] Optionally, the light-absorbing layer may include a first surface, a second surface, and a third surface. The first surface of the light-absorbing layer is a surface of the light-absorbing layer closer to the light-emitting unit. The second surface of the light-absorbing layer is a surface of the light-absorbing layer farther from the light-emitting unit. The third surface of the light-absorbing layer is a surface of the light-absorbing layer closer to the first filter unit.

[0302] In some embodiments, some or all of the third surface of the light-absorbing layer can contact the first filter unit.

[0303] Optionally, the first surface of the light-absorbing layer and the first surface of the first filter unit can be at the same height relative to the light-emitting unit. In other words, the first surface of the light-absorbing layer and the first surface of the first filter unit are located at the same height. Alternatively, the first surface of the light-absorbing layer and the first surface of the first filter unit can be at different heights relative to the light-emitting unit. This is not a limitation in this embodiment of the present application. The first surface of the first filter unit is the surface of the first filter unit that is closer to the light-emitting unit.

[0304] Optionally, the light absorbing layer may include organic or inorganic light absorbing materials. The light absorbing layer may be similar to light absorbing layer 550 of FIG.

[0305] The first filter unit is disposed on the side of the transition layer facing away from the encapsulation layer, the first filter unit contacting the transition layer and the light absorbing layer.

[0306] Optionally, the first filter unit includes a first surface, a second surface, and a third surface. The first surface of the first filter unit is a surface of the first filter unit closer to the light-emitting unit. The second surface of the first filter unit is a surface of the first filter unit farther from the light-emitting unit. The third surface of the first filter unit is a surface of the first filter unit closer to the light-absorbing layer.

[0307] Optionally, the first surface of the first filter unit and the first surface of the light absorbing layer can be at the same height or different heights relative to the light emitting unit, which is not limited in this embodiment of this application.

[0308] Optionally, the first filter unit may include an organic or inorganic insulating material. The first filter unit may be similar to first filter unit 540 of FIG.

[0309] Optionally, the order of forming the light absorbing layer and the first filter unit on the side of the transition layer that does not face the encapsulation layer is not limited in this embodiment of the present application. For example, the light absorbing layer may be formed first on the side of the transition layer that does not face the encapsulation layer, and then the first filter unit may be formed. Alternatively, the first filter unit may be formed first on the side of the transition layer that does not face the encapsulation layer, and then the light absorbing layer may be formed. Alternatively, the light absorbing layer and the first filter unit may be formed simultaneously on the side of the transition layer that does not face the encapsulation layer.

[0310] Optionally, the pixel device may include at least one first filter unit, each of which may be one of three primary colors. Thus, in forming the first filter units, a first filter unit of a first color among the three primary colors may be formed first, then a first filter unit of a second color among the three primary colors may be formed, and finally a first filter unit of a third color among the three primary colors may be formed. The first color, the second color, and the third color may be different colors among the three primary colors.

[0311] It should be understood that the order in which the light absorbing layer and the three-color first filter units are formed is not particularly limited in this embodiment of the present application. For example, the light absorbing layer may be formed first, and then the first filter units of the first color, the first filter units of the second color, and the first filter units of the third color may be formed in this order. Alternatively, the first filter units of the first color may be formed first, and then the light absorbing layer, the first filter units of the second color, and the first filter units of the third color may be formed in this order. Alternatively, the light absorbing layer and the three-color first filter units may be formed in another order.

[0312] Optionally, after step S1540 is performed, step S1550, S1560, or S1570 may be further performed.

[0313] S1550: Form a metal component on the side of the transition layer that faces away from the encapsulation layer.

[0314] Some or all of the metal components are disposed within the light absorbing layer and / or the first filter unit.

[0315] Optionally, the metal component may include at least one surface, one or more of which may be in contact with the insulating material in the light absorbing layer and / or the insulating material in the first filter unit.

[0316] Optionally, the metal component can be a metal trace. The metal component can be similar to metal component 850 in FIG. 8 or metal component 950 in FIG.

[0317] Optionally, the order of forming the light absorbing layer, the first filter unit, and the metal component in the pixel device is not limited in this embodiment of this application. For example, the metal component may be formed first, then the light absorbing layer, and finally the first filter unit. Alternatively, the metal component may be formed first, then the first filter unit, and finally the light absorbing layer. Alternatively, the light absorbing layer, the first filter unit, and the metal component may be formed in other orders.

[0318] Optionally, the metal component may include a first metal layer and a second metal layer, with some or all of the first metal layer being disposed within the light absorbing layer and / or the first filter unit, and some or all of the second metal layer being disposed within the light absorbing layer and / or the first filter unit.

[0319] Optionally, the height of the first surface of the first metal layer relative to the light-emitting units is less than the first height, and the first height is the height of the first surface of the second metal layer relative to the light-emitting units.

[0320] In some embodiments, the insulating material of the light absorbing layer and / or the insulating material of the first filter unit is provided between the first metal layer and the second metal layer. Alternatively, the first metal layer and the second metal layer are electrically conductive with each other. This is not limited to this embodiment of the present application.

[0321] Optionally, the first surface of the first metal layer, the first surface of the light-absorbing layer, and / or the first surface of the first filter unit are flush with the light-emitting unit. The first surface of the first metal layer is the surface of the first metal layer closer to the light-emitting unit. Specifically, the first surface of the first metal layer does not contact the insulating material in the light-absorbing layer and / or the insulating material in the first filter unit, and the surfaces of the first metal layer other than the first surface contact the insulating material in the light-absorbing layer and / or the insulating material in the first filter unit.

[0322] Optionally, some or all of the surface of the second metal layer may be in contact with the insulating material in the light absorbing layer and / or the insulating material in the first filter unit.

[0323] Optionally, the first metal layer and the second metal layer may be metal wiring.

[0324] Optionally, the first metal layer may be similar to first metal layer 1008 of pixel device 1000 of Figure 10, first metal layer 1108 of pixel device 1100 of Figure 11, first metal layer 1208 of pixel device 1200 of Figure 12, or first metal layer 1308 of pixel device 1300 of Figure 13. The second metal layer may be similar to second metal layer 1009 of pixel device 1000 of Figure 10, second metal layer 1109 of pixel device 1100 of Figure 11, second metal layer 1209 of pixel device 1200 of Figure 12, or second metal layer 1309 of pixel device 1300 of Figure 13.

[0325] When the first metal layer and the second metal layer are disposed within the light-absorbing layer, the order of forming the light-absorbing layer, the first metal layer, and the second metal layer may be as follows: first, the first metal layer is formed on the side of the transition layer that does not face the encapsulation layer; second, a first portion of the light-absorbing layer is formed on the side of the transition layer that does not face the encapsulation layer; third, a second metal layer is formed on the side of the first portion of the light-absorbing layer that does not face the light-emitting units; and finally, a second portion of the light-absorbing layer is formed on the side of the first portion of the light-absorbing layer that does not face the light-emitting units.

[0326] The first portion of the light-absorbing layer includes a light-absorbing material and a first metal layer. The light-absorbing material in the first portion of the light-absorbing layer can be in contact with at least one surface of the first metal layer. For example, the light-absorbing material in the first portion of the light-absorbing layer can be in contact with a surface of the first metal layer other than the first surface. The first surface of the first metal layer is the surface of the first metal layer closer to the light-emitting units. The second portion of the light-absorbing layer includes a light-absorbing material and a second metal layer. The light-absorbing material in the second portion of the light-absorbing layer can be in contact with at least one surface of the second metal layer. For example, the light-absorbing material in the second portion of the light-absorbing layer can be in contact with a surface of the second metal layer other than the first surface. The first surface of the second metal layer is the surface of the second metal layer closer to the light-emitting units. Specifically, all surfaces of the second metal layer can be in contact with the light-absorbing material in the first or second portion of the light-absorbing layer.

[0327] It should be understood that the light absorbing layer of the pixel device is formed after the second portion of the light absorbing layer is formed.

[0328] When the first metal layer and the second metal layer are disposed in the light absorbing layer, the order of forming the light absorbing layer, the first metal layer, and the second metal layer may alternatively be as follows: first, the light absorbing layer is formed on the side of the transition layer that does not face the encapsulation layer, then two through holes are formed in the light absorbing layer, and the first metal layer and the second metal layer are formed in the two through holes.

[0329] When the first metal layer and the second metal layer are disposed in the first filter unit, the order of forming the first filter unit, the first metal layer, and the second metal layer is the same as the order of forming the light absorbing layer, the first metal layer, and the second metal layer, and the details will not be described again here.

[0330] When the first metal layer and / or the second metal layer are disposed within the first filter unit and the light absorbing layer, the order of forming the first metal layer, the second metal layer, the first filter unit, and the light absorbing layer is the same as the order of forming the light absorbing layer, the first metal layer, and the second metal layer, and the details will not be described again here.

[0331] Optionally, the order of forming the light absorbing layer, the first filter unit, the first metal layer, and the second metal layer in the pixel device, as well as the order of forming the light absorbing layer, the first filter unit, and the metal component in the pixel device, is not limited in this embodiment of this application.

[0332] S1560: A second filter unit is formed on the side of the first portion of the first filter unit that does not face the light emitting unit.

[0333] The second filter unit is disposed on the side of the first portion of the first filter unit that faces away from the light-emitting unit and is in contact with the first portion of the first filter unit. The second filter unit has a color different from that of the first filter unit. The first portion of the first filter unit is an edge portion of the first filter unit that is close to the light-absorbing layer.

[0334] Optionally, the insulating material included in the second filter unit may be the same as or different from the insulating material of the first filter unit, which is not limited in this embodiment of this application.

[0335] Optionally, the second filter unit is similar to second filter unit 960 of FIG. 9, CF1112 of FIG. 11, or CF1312 of FIG.

[0336] S1570: A lens is formed on the side of the first filter unit that does not face the light emitting unit.

[0337] Optionally, a height of the first surface of the lens relative to the light-emitting unit is greater than a second height, the second height being a height of the first surface of the first filter unit relative to the light-emitting unit. The first surface of the lens is a surface of the lens closer to the light-emitting unit.

[0338] Optionally, the first surface of the lens contacts the second surface of the first filter unit. Specifically, the second surface of the first filter unit contacts an insulating material included in the lens. The first surface of the lens is a surface of the lens closer to the light-emitting unit. The second surface of the first filter unit is a surface of the first filter unit farther from the light-emitting unit. Alternatively, the first surface of the lens may contact a portion of the second surface of the light-absorbing layer, the second surface of the first filter unit, and a portion of the surface of the second filter unit.

[0339] Optionally, an insulating material may be provided between the first surface of the lens and the second surface of the first filter unit, and the insulating material may be configured to protect the first filter unit. Specifically, the first surface of the lens may be in partial contact with the second surface of the first filter unit or may not be in complete contact with it. Similarly, the first surface of the lens may be in partial contact with a portion of the second surface of the light-absorbing layer and the second surface of the first filter unit or may not be in complete contact with it. The first surface of the lens may be in partial contact with a portion of the surface of the second filter unit that is farther from the light-emitting unit or may not be in complete contact with it.

[0340] Optionally, the lens may be configured to focus light, and may comprise an organic or inorganic insulating material. The lens may be similar to lens 710 of pixel device 700 in Figure 7, lens 1212 of pixel device 1200 in Figure 12, or lens 1313 of pixel device 1300 in Figure 13.

[0341] In this embodiment of the present application, a transition layer can be disposed between the encapsulation layer and the first filter unit, and the transition layer can contact the first filter unit, thereby shortening the distance between the light-emitting unit and the first filter unit, thereby improving the display brightness of the pixel device and reducing brightness attenuation at large viewing angles. Furthermore, the absence of an additional multi-layer insulating layer between the transition layer and the first filter unit can improve the reliability of the pixel device. Additionally, in this embodiment of the present application, the thickness of the pixel device can be reduced, and the number of optical masks required in the manufacturing process of the pixel device can be reduced, thereby reducing manufacturing costs.

[0342] 16 is a schematic flow chart of a pixel device manufacturing method according to one embodiment of the present application. The method of FIG. 16 includes the following steps:

[0343] S1610: Form a light-emitting unit of a pixel device on a substrate. Step S1610 is the same as step S1510, and the details will not be described again here.

[0344] S1620: Form a connection layer on the side of the light-emitting unit that does not face the substrate.

[0345] The connecting layer may be disposed between the light-emitting unit and the first filter unit, and the tie layer may be in contact with the light-emitting unit, the first filter unit, and the light-absorbing layer.

[0346] Optionally, the connecting layer may be similar to connecting layer 820 of pixel device 800 of FIG. 8 or connecting layer 920 of pixel device 900 of FIG.

[0347] Optionally, the connecting layer may include an encapsulation layer and a transition layer. The specific implementation of forming the encapsulation layer and the transition layer on the side of the light-emitting unit that does not face the substrate is similar to steps S1520 and S1530.

[0348] S1630: Form a light absorbing layer, a first filter unit, and a metal component on the side of the connecting layer that does not face the light emitting unit. For step S1630, see the descriptions in steps S1540 and S1550.

[0349] Optionally, after step S1630 is performed, step S1560 or S1570 may be further performed.

[0350] In this embodiment of the present application, the metal component can be disposed in the light absorbing layer and / or the first filter unit, so that an additional multi-layer insulating layer (e.g., TOE-OC in FIGS. 2 to 4 ) can be provided between the light absorbing layer and the light emitting unit to dispose the metal component in the insulating layer. layer and an organic or inorganic ILD layer). Therefore, in this embodiment of the present application, peeling, cracking, or other problems caused by an inorganic ILD layer can be avoided, thereby improving the reliability of the pixel device. In addition, in this embodiment of the present application, the light-absorbing layer and / or the first filter unit can be reused to shorten the optical distance between the light-emitting unit and the first filter unit in the pixel device, thereby improving the brightness of the light emitted by the pixel device and reducing the brightness attenuation at large viewing angles. In addition, in this embodiment of the present application, the thickness of the pixel device can be reduced, and the number of optical masks in the manufacturing process of the pixel device can be reduced, thereby reducing manufacturing costs.

[0351] An embodiment of the present application further provides a pixel module, which may include a plurality of pixel devices 500 of Fig. 5, or a plurality of pixel devices 800 of Fig. 8, or a plurality of pixel devices 900 of Fig. 9, although this is not limited to this embodiment of the present application.

[0352] For example, the pixel module includes a plurality of light-emitting units, an encapsulation layer, a transition layer, a plurality of first filter units, and a light-absorbing layer. Each of the plurality of light-emitting units is similar to light-emitting unit 510 in FIG. 5. The encapsulation layer is similar to encapsulation layer 520 in FIG. 5. The transition layer is similar to transition layer 530 in FIG. 5. Each of the plurality of first filter units is similar to first filter unit 540 in FIG. 5. The light-absorbing layer is similar to light-absorbing layer 550 in FIG. 5.

[0353] For example, the pixel module includes a plurality of light-emitting units, a connecting layer, a plurality of first filter units, a light-absorbing layer, and a plurality of metal components. Each of the plurality of light-emitting units is similar to light-emitting unit 810 in FIG. 8. The connecting layer is similar to connecting layer 820 in FIG. 8. Each of the plurality of first filter units is similar to first filter unit 830 in FIG. 8. The light-absorbing layer is similar to light-absorbing layer 840 in FIG. 8. Each of the plurality of metal components is similar to metal component 850 in FIG. 8.

[0354] For example, the pixel module includes a plurality of light-emitting units, a connecting layer, a plurality of first filter units, a light-absorbing layer, a plurality of metal components, and a plurality of second filter units. Each of the plurality of light-emitting units is similar to light-emitting unit 910 in FIG. 9. The connecting layer is similar to connecting layer 920 in FIG. 9. Each of the plurality of first filter units is similar to first filter unit 930 in FIG. 9. The light-absorbing layer is similar to light-absorbing layer 940 in FIG. 9. Each of the plurality of metal components is similar to metal component 950 in FIG. 9. Each of the plurality of second filter units is similar to second filter unit 960 in FIG. 9.

[0355] FIG. 17 is a block diagram of a display module structure according to one embodiment of the present application. The display module 1700 of FIG. 17 includes the pixel module described above. Specifically, the display module 1700 includes a plurality of pixel devices 1710, and each pixel device 1710 can be any of the pixel devices 500 of FIG. 5, 600 of FIG. 6, 700 of FIG. 7, 800 of FIG. 8, 900 of FIG. 9, 1000 of FIG. 10, 1100 of FIG. 11, 1200 of FIG. 12, and 1300 of FIG. 13. Each pixel device 1710 can include a first filter unit of any of red (R), green (G), and blue (B). In other words, the pixel device 1710 can include a first filter unit of any of red (R), green (G), and blue (B).

[0356] It should be understood that the arrangement order of the pixel devices 1710 of different colors in the display module 1700 is not limited to this embodiment of the present application. The pixel devices 1710 of different colors are pixel devices including first filter units (i.e., CFs) of different colors. For example, the arrangement order of the pixel devices 1710 of different colors may be as shown in FIG. 17 or may be other arrangement orders.

[0357] An embodiment of the present application further includes a display, which includes the display module 1700 of FIG.

[0358] An embodiment of the present application further provides an electronic device, which includes the display described above.

[0359] Those skilled in the art may recognize that the units and algorithm steps in the examples described with reference to the embodiments disclosed in this specification may be implemented by electronic hardware or a combination of computer software and electronic hardware. Whether a function is performed by hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art may use different methods to implement the described functions for each specific application, but such implementation should not be considered to go beyond the scope of this application.

[0360] It can be clearly understood by those skilled in the art that for ease and conciseness of description, the detailed operation processes of the above-mentioned systems, devices and units may refer to the corresponding processes in the above-mentioned method embodiments, and the details will not be described again here.

[0361] In some embodiments provided in this application, it should be understood that the disclosed systems, devices, and methods may be implemented in other manners. For example, the described device embodiments are merely examples. For example, the division into units is merely a logical division of function, and other divisions may be used in actual implementation. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not implemented. Furthermore, the shown or described mutual couplings or direct couplings or communication connections may be implemented through some interface. Indirect couplings or communication connections between devices or units may be implemented in electrical, mechanical, or other forms.

[0362] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, specifically, may be located in one place or distributed over multiple network units. Some or all of the units may be selected according to actual requirements to achieve the objectives of the solutions of the embodiments.

[0363] In addition, the functional units in the embodiments of this application may be integrated into one processing unit, or each unit may exist physically alone, or two or more units may be integrated into one unit.

[0364] When functions are implemented in the form of a software functional unit and sold or used as an independent product, the functions may be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application may essentially, or a portion that contributes to the prior art, be implemented in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for instructing a computing device (which may be a personal computer, a server, a network device, etc.) to execute all or part of the steps of the method in the embodiments of this application. The storage medium includes any medium that can store program code, such as a USB flash drive, a removable hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or a compact disk.

[0365] The above description is merely a specific implementation of this application and is not intended to limit the scope of protection of this application. Any modifications or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application shall fall within the scope of protection of this application. Therefore, the scope of protection of this application shall be governed by the scope of protection of the claims.

Claims

1. 1. A pixel device having a light-emitting unit, an encapsulation layer, a transition layer, a light-absorbing layer, and a first filter unit, the light-emitting unit is configured to emit light; the encapsulation layer is configured to protect the light-emitting unit; the transition layer is disposed between the encapsulation layer and the first filter unit, the transition layer contacting the encapsulation layer and the first filter unit; the light absorbing layer is disposed on a side of the transition layer that does not face the light emitting unit, the light absorbing layer is disposed around the first filter unit, and the light absorbing layer is in contact with the transition layer and the first filter unit; Pixel device.

2. The pixel device of claim 1 , wherein the transition layer is free of metal components.

3. 3. The pixel device according to claim 1 or 2, further comprising a metal component, part or all of which is arranged in the light absorbing layer and / or the first filter unit.

4. the metal component has a first metal layer and a second metal layer; Part or all of the first metal layer is disposed within the light absorbing layer and / or the first filter unit; and / or a part or all of the second metal layer is disposed within the light absorbing layer and / or the first filter unit; 4. The pixel device of claim 3.

5. 5. The pixel device of claim 4, wherein a height of a first surface of the first metal layer relative to the light-emitting unit is lower than a first height, the first height being a height of a first surface of the second metal layer relative to the light-emitting unit, the first surface of the first metal layer being a surface of the first metal layer closer to the light-emitting unit, and the first surface of the second metal layer being a surface of the second metal layer closer to the light-emitting unit.

6. When some or all of the metal component is disposed within the first portion of the first filter unit, the pixel device further comprises a second filter unit; the second filter unit is disposed on a side of the first portion of the first filter unit that does not face the light-emitting unit, the second filter unit is in contact with the first portion of the first filter unit, a color of the second filter unit is different from a color of the first filter unit, and the first portion of the first filter unit is an edge portion of the first filter unit that is close to the light-absorbing layer; 6. A pixel device according to any one of claims 3 to 5.

7. The pixel device according to claim 1 , further comprising a lens, the lens being arranged on a side of the first filter unit that faces away from the light emitting unit.

8. 1. A pixel device having a light-emitting unit, a connecting layer, a light-absorbing layer, a first filter unit, and a metal component, the light-emitting unit is configured to emit light; the connecting layer is disposed between the light emitting unit and the first filter unit, and the connecting layer is in contact with the light emitting unit and the first filter unit; the light absorbing layer is disposed on a side of the connecting layer that does not face the light emitting unit, the light absorbing layer is disposed around the first filter unit, and the light absorbing layer is in contact with the first filter unit and the connecting layer; some or all of the metal components are disposed within the light absorbing layer and / or the first filter unit; Pixel device.

9. the metal component has a first metal layer and a second metal layer; Part or all of the first metal layer is disposed within the light absorbing layer and / or the first filter unit; and / or a part or all of the second metal layer is disposed within the light absorbing layer and / or the first filter unit; 9. The pixel device of claim 8.

10. 10. The pixel device of claim 9, wherein a height of a first surface of the first metal layer relative to the light-emitting unit is lower than a first height, the first height being a height of a first surface of the second metal layer relative to the light-emitting unit, the first surface of the first metal layer being a surface of the first metal layer closer to the light-emitting unit, and the first surface of the second metal layer being a surface of the second metal layer closer to the light-emitting unit.

11. When some or all of the metal component is disposed within the first portion of the first filter unit, the pixel device further comprises a second filter unit; the second filter unit is disposed on a side of the first portion of the first filter unit that does not face the light-emitting unit, the second filter unit is in contact with the first portion of the first filter unit, a color of the second filter unit is different from a color of the first filter unit, and the first portion of the first filter unit is an edge portion of the first filter unit that is close to the light-absorbing layer; Pixel device according to any one of claims 8 to 10.

12. the connecting layer includes an encapsulation layer and a transition layer; the encapsulation layer is configured to protect the light-emitting unit; the transition layer is disposed between the encapsulation layer and the first filter unit, and the transition layer contacts the encapsulation layer, the first filter unit, and the light absorbing layer. Pixel device according to any one of claims 8 to 11.

13. The pixel device of claim 12 , wherein the transition layer is free of metal components.

14. 14. The pixel device of claim 8, further comprising a lens, the lens being arranged on a side of the first filter unit that faces away from the light emitting unit.

15. 1. A pixel device manufacturing method, comprising: forming a light-emitting unit of a pixel device on the substrate, the light-emitting unit configured to emit light; forming an encapsulation layer on a side of the light-emitting unit that does not face the substrate, the encapsulation layer being configured to protect the light-emitting unit; forming a transition layer on the side of the encapsulation layer that faces away from the light-emitting unit; a light absorbing layer and a first filter unit are formed on the side of the transition layer that does not face the encapsulation layer, the transition layer is in contact with the encapsulation layer and the first filter unit, the light absorbing layer is disposed around the first filter unit, and the light absorbing layer is in contact with the transition layer and the first filter unit; How to have that.

16. The method of claim 15 , wherein the transition layer is free of metal components.

17. The method further comprises: forming a metal component on the side of the transition layer that does not face the encapsulation layer, and a part or all of the metal component is disposed in the light absorbing layer and / or the first filter unit; 17. The method of claim 15 or 16, comprising:

18. forming a metal component on a side of the transition layer that faces away from the encapsulation layer, forming a first metal layer and a second metal layer on the side of the transition layer that does not face the encapsulation layer, and a part or all of the first metal layer being disposed in the light absorbing layer and / or the first filter unit, and / or a part or all of the second metal layer being disposed in the light absorbing layer and / or the first filter unit; 20. The method of claim 17, comprising:

19. The method further comprises: a second filter unit is formed on a side of the first portion of the first filter unit that does not face the light-emitting unit, the second filter unit is in contact with the first portion of the first filter unit, a color of the second filter unit is different from a color of the first filter unit, a part or all of the metal components are disposed within the first portion of the first filter unit, and the first portion of the first filter unit is an edge portion of the first filter unit that is close to the light-absorbing layer; 19. The method of claim 17 or 18, comprising:

20. The method further comprises: forming a lens on the side of the first filter unit that does not face the light-emitting unit; 20. The method of any one of claims 15 to 19, comprising:

21. 1. A pixel device manufacturing method, comprising: forming a light-emitting unit of a pixel device on the substrate, the light-emitting unit configured to emit light; forming a connection layer on the side of the light-emitting unit that does not face the substrate; a light absorbing layer, a first filter unit, and a metal component are formed on the side of the connection layer that does not face the light emitting unit, the connection layer is in contact with the light emitting unit and the first filter unit, the light absorbing layer is disposed around the first filter unit, the light absorbing layer is in contact with the first filter unit and the connection layer, and part or all of the metal component is disposed in the light absorbing layer and / or the first filter unit; How to have that.

22. forming a metal component on the side of the connecting layer that does not face the light-emitting unit; forming a first metal layer and a second metal layer on the side of the connecting layer that does not face the light-emitting unit, and a part or all of the first metal layer being disposed in the light-absorbing layer and / or the first filter unit, and / or a part or all of the second metal layer being disposed in the light-absorbing layer and / or the first filter unit; 22. The method of claim 21, comprising:

23. The method further comprises: a second filter unit is formed on a side of the first portion of the first filter unit that does not face the light-emitting unit, the second filter unit is in contact with the first portion of the first filter unit, a color of the second filter unit is different from a color of the first filter unit, a part or all of the metal components are disposed within the first portion of the first filter unit, and the first portion of the first filter unit is an edge portion of the first filter unit that is close to the light-absorbing layer; 23. The method of claim 21 or 22, comprising:

24. forming a connection layer on the side of the light-emitting unit that does not face the substrate; forming an encapsulation layer on a side of the light-emitting unit that faces away from the substrate, the encapsulation layer being configured to protect the light-emitting unit; forming a transition layer on a side of the encapsulation layer that does not face the substrate, the transition layer being disposed between the encapsulation layer and the first filter unit, the transition layer being in contact with the encapsulation layer, the first filter unit, and the light absorbing layer; 24. The method of any one of claims 21 to 23, comprising:

25. The method of claim 24 , wherein the transition layer is free of metal components.

26. The method further comprises: forming a lens on the side of the first filter unit that does not face the light-emitting unit; 26. The method of any one of claims 21 to 25, comprising:

27. 15. A pixel module comprising a plurality of pixel devices according to any one of claims 1 to 7 or any one of claims 8 to 14.

28. 28. A display module comprising a plurality of pixel modules according to claim 27.

29. 29. A display comprising a display module according to claim 28.

30. 30. An electronic device comprising the display of claim 29.

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