Wafer centering adjustment device and adjustment method

Abstract

This wafer centering adjustment method features a wafer centering system (1) that, before etching a wafer (4), checks whether the center of the wafer (4) is aligned with the center of a first suction stage (3). If not, the wafer centering system (1) corrects the position of the wafer (4). After etching of the wafer (4) is completed, a wafer edge cleaning effect detection system (2) checks whether the center of the wafer (4) is aligned with the center of the first suction stage (3) during the etching process and obtains second deviation data. The wafer edge cleaning effect detection system (2) feeds the second deviation data back to the wafer centering system (1). Before etching the next wafer, the wafer centering system (1) obtains the first deviation data and performs a first correction. Then, it performs a second correction of the wafer position according to the second deviation data obtained after etching the previous wafer, thereby achieving closed-loop control of the centering adjustment device. Furthermore, the second correction significantly improves the alignment between the center of the wafer and the center of the first suction stage, effectively ensuring uniformity of the wafer edge etching width.

Description

[Technical Field]

[0001] The present invention relates to the technical field of integrated circuits, and more particularly to a wafer centering adjustment apparatus and method. [Background technology]

[0002] As integrated circuit technology nodes advance, semiconductor devices are increasingly being fabricated closer to the wafer edge. However, various defects transferred from the wafer edge are one of the major factors limiting device yield. During device manufacturing, the complex interactions of thin film deposition, photolithography, etching, chemical-mechanical polishing, and other processes result in unstable thin film deposition at the wafer edge. The weak adhesion between these thin films and the inherent stress of ultra-thick dielectric films in the wafer edge region can cause serious peeling defects, particle contamination, and other issues, further impacting product yield.

[0003] In summary, wafer edge cleaning and etching are becoming increasingly important in the manufacturing process of complex thin-film stacked chips. During the manufacturing process, various chemical solutions are used to effectively remove various types of dielectric films, metal films, organic material films, and particle contamination from the wafer edge, thereby preventing adverse effects on subsequent processes and improving chip manufacturing yield.

[0004] However, unless the uniformity of the etching width at the wafer edge can be strictly controlled, the thin film and contamination cannot be effectively removed. In addition, since the wafer placement position depends on the wafer transfer position, any deviation in transfer will make it impossible to effectively ensure the concentricity between the wafer and the placement table, which will affect the uniformity of the etching width at the wafer edge. Summary of the Invention

[0005] In view of the above problems, an object of the present invention is to provide a wafer centering adjustment apparatus and method in which the center of the wafer and the center of the suction table coincide with each other and uniformity of the etching width of the wafer edge is ensured.

[0006] To achieve the above objectives, the present invention provides the following technical solutions:

[0007] The wafer centering adjustment apparatus includes a first suction stage, and further includes a wafer centering system and a wafer edge cleaning effect detection system. The wafer centering system is disposed in the process chamber, measures first shift data when the center of the wafer deviates from the center of the first absorption stage, and corrects the position of the wafer before etching based on the first shift data and second shift data obtained after the previous wafer has been etched so that the center of the wafer coincides with the center of the first absorption stage. The wafer edge cleaning effect detection system is disposed outside the process chamber, measures an edge etching width WE of the wafer after etching, obtains second deviation data of the center of the wafer from the center of the first suction table based on the edge etching width WE, and feeds the second deviation data back to the wafer centering system.

[0008] A method for adjusting the centering of a wafer includes the following steps. The first suction table suctions the wafer. Before the wafer is etched, the wafer centering system measures first shift data indicating that the center of the wafer is shifted from the center of the first suction table, and corrects the position of the wafer based on the first shift data and second shift data obtained after the previous wafer is etched so that the center of the wafer coincides with the center of the first suction table. After etching of the wafer is completed, the wafer is transferred to a wafer edge cleaning effectiveness detection system. The wafer edge cleaning effect detection system measures the edge etching width of the wafer after etching, obtains second deviation data of the deviation of the center of the wafer from the center of the first suction table based on the edge etching width WE, and feeds the second deviation data back to the wafer centering system.

[0009] Compared with the prior art, the present invention has the following beneficial effects:

[0010] Before the wafer is etched, the wafer centering system checks whether the center of the wafer coincides with the center of the first suction stage, and if the wafer is misaligned, the wafer centering system corrects the position of the wafer.

[0011] After the etching of the wafer is completed, the wafer is transferred to a wafer edge cleaning effect detection system, which checks whether the center of the wafer coincides with the center of the first suction table during the etching process, obtains second deviation data, and feeds the second deviation data back to the wafer centering system.

[0012] Before etching the next wafer, the wafer centering system obtains the first deviation data and performs a first correction of the wafer position, and then performs a second correction of the wafer position according to the second deviation data obtained after the previous wafer is etched, thereby realizing closed-loop control of the centering adjustment device. Furthermore, these two corrections greatly improve the alignment between the center of the wafer and the center of the first suction platform, effectively ensuring the uniformity of the edge etching width of the wafer. [Brief explanation of the drawings]

[0013] In order to more clearly describe the embodiments of the present invention or the technical solutions in the prior art, the drawings that need to be used in the description of the embodiments or the prior art are briefly introduced below. It should be noted that the drawings in the following description are only some embodiments of the present invention, and it is obvious that those skilled in the art can obtain other drawings from these drawings without creative efforts. [Figure 1] FIG. 1 is a top view of a wafer centering system in a wafer centering adjustment apparatus according to a first embodiment of the present invention. [Figure 2] FIG. 2 is a side view of a wafer centering system in the wafer centering adjustment apparatus according to the first embodiment of the present invention. [Figure 3] FIG. 3 is a schematic diagram showing the configuration of a wafer edge cleaning effect detection system in the wafer centering adjustment apparatus according to the first embodiment of the present invention. [Figure 4] FIG. 4 is a flowchart of a wafer centering adjustment method according to the second embodiment of the present invention. [Figure 5] FIG. 5 is a graph showing the relationship between the angle and the measured value of the displacement sensor of the present invention. [Figure 6] FIG. 6 is a first schematic diagram of a wafer displaced from a first suction table according to the present invention. [Figure 7] FIG. 7 is a second schematic diagram of the wafer displaced from the first suction table of the present invention. [Figure 8] FIG. 8 is a periodic change relationship curve showing the angle and etching width of the present invention. [Figure 9] FIG. 9 is a schematic diagram of the etching result after the wafer is displaced from the first suction stage of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0014] In order to make the problems, features and advantages of the present invention clearer and easier to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is obvious that the embodiments described below are only some embodiments of the present invention, and are not all embodiments. Based on the embodiments of the present invention, all other embodiments that can be obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.

[0015] In describing the present invention, when a component is considered to be "connected" to another component, it should be understood that the component may be directly connected to the other component, or there may be a centrally located component at the same time. When a component is considered to be "disposed" on another component, it may be a component directly disposed on the other component, or there may be a centrally located component at the same time.

[0016] The technical solutions of the present invention are further described below with reference to the accompanying drawings and specific embodiments.

[0017] [First embodiment] 1 to 3, the present invention provides a wafer centering adjustment apparatus, which includes a first suction table 3, a wafer centering system 1, and a wafer edge cleaning effect detection system 2. The wafer centering system 1 is disposed inside an etching process chamber, and the wafer edge cleaning effect detection system 2 is disposed outside the etching process chamber.

[0018] Before the wafer 4 is etched, the wafer centering system 1 measures first deviation data, which indicates that the center of the wafer 4 is offset from the center of the first suction table 3. The wafer centering system 1 corrects the position of the wafer 4 based on the first deviation data so that the center of the wafer 4 coincides with the center of the first suction table 3.

[0019] After etching of the wafer 4 is completed, the wafer 4 is transported out of the etching processing chamber. The wafer edge cleaning effect detection system 2 measures the edge etching width WE of the wafer 4 and simultaneously obtains second deviation data of the deviation of the center of the wafer 4 from the center of the first suction table 3 based on the edge etching width WE, and feeds the second deviation data back to the wafer centering system 1.

[0020] Before etching the next wafer, the wafer centering system 1 corrects the wafer position based on the first deviation data of the wafer and the second deviation data of the previous wafer. In this specification, the deviation data acquired by the wafer centering system 1 before etching each wafer is collectively referred to as the first deviation data, and the deviation data acquired by the wafer edge cleaning effect detection system 2 after etching each wafer is collectively referred to as the second deviation data.

[0021] Specifically, before etching the wafer 4, the wafer centering system 1 acquires first deviation data. If the first deviation data indicates that the wafer 4 is misaligned, the wafer centering system 1 corrects the position of the wafer 4. After etching the wafer 4 is completed, the wafer edge cleaning effect detection system 2, considering the possibility of errors in the measurement data caused by the wafer centering system 1's correction, reconfirms whether the center of the wafer 4 coincides with the center of the first suction table 3 during the etching process and acquires second deviation data. The wafer edge cleaning effect detection system 2 then feeds the second deviation data back to the wafer centering system 1. Before etching the next wafer, the wafer centering system 1 first acquires the first deviation data to correct the wafer position, and then performs a second correction of the wafer position according to the second deviation data acquired after etching the previous wafer, thereby achieving closed-loop control of the centering adjustment device. Furthermore, these two corrections significantly improve the alignment between the center of the wafer and the center of the first suction table 3, effectively ensuring the uniformity of the wafer edge etching width.

[0022] In another embodiment, the wafer centering system 1 specifically includes a clamp assembly, a measurement module, a drive module 5, and a data processing module 14. The clamp assembly limits the position of the wafer 4. When the wafer 4 is not misaligned, the clamp assembly contacts the outer edge of the wafer 4, and when the wafer 4 rotates, the clamp assembly does not impede the movement of the wafer 4. When the wafer 4 is misaligned, the wafer 4 acts on the clamp assembly as it rotates, causing the clamp assembly to move and is connected to the measurement module. The measurement module measures the movement data generated by the clamp assembly and transmits the movement data to the data processing module 14.

[0023] If the center of the wafer 4 deviates from the center of the first suction table 3, the data processing module 14 sends a correction command to the driving module 5. The driving module 5 is connected to the clamp assembly and drives the clamp assembly to move based on the correction command, and the clamp assembly corrects the position of the wafer 4.

[0024] Furthermore, the measurement module has an elastic member 12 and a recording unit 13, and the clamp assembly has a first clamp member 10 and a second clamp member 11. The first clamp member 10 and the second clamp member 11 are arranged symmetrically on two sides of the first suction base 3. The axis of symmetry is a straight line that runs along the radial direction of the first suction base 3 and passes through the center of the first suction base 3. The second clamp member 11 is connected to the recording unit 13 by the elastic member 12.

[0025] When the wafer 4 is in an unshifted state, the recording unit 13 records the initial compression of the elastic member 12 .

[0026] When the wafer 4 is misaligned, the misaligned portion of the wafer 4 pushes the second clamping member and moves toward the elastic member 12 while the wafer 4 is rotating. The recording unit 13 records the date of the compression amount. The data processing module 14 sends a correction command to the driving module 5 based on the compression amount data. The driving module 5 then drives the first clamping member 10 and the second clamping member 11 based on the correction command to clamp (grasp) and move the wafer 4 so that the center of the wafer 4 coincides with the center of the first suction table 3. In actual production, multiple measurement points may be provided around the outer periphery of the wafer 4, data on the compression amount at the multiple measurement points may be recorded, and the compression amount data may be compared with the initial compression amount to determine the misaligned portion of the wafer.

[0027] In another embodiment, two cylindrical rollers 15 are attached to the front ends of the first clamping member 10 and the second clamping member 11. When using two clamping members to correct the center of the wafer, four rollers 15 ensure contact with four points on the side of the wafer 4. As the wafer 4 rotates, the rollers 15 also rotate accordingly, preventing damage to the wafer 4 due to edge friction. The rollers 15 are preferably made of a material that is resistant to deformation and does not contain impurities such as metal, such as a ceramic material. Another advantage of four-point contact is that even if the notch portion of the wafer 4 makes contact with one of the contact points, the two clamping members can press the wafer 4 and correct the center position of the wafer 4 using the remaining three contact points. This eliminates the need to rotate the wafer 4 by a certain angle to avoid the notch position. In another embodiment, the recording unit 13 is a displacement sensor, and the elastic member 12 is a spring, rubber, or the like. The centers of the first clamping member 10 and the second clamping member 11 are on the same horizontal line as the center of the first suction table 3. The distance the spring is compressed can be read by the displacement sensor.

[0028] As shown in Figure 5, four measurement points are evenly spaced along the circumference of the wafer 4. That is, one measurement point is located at each of the 0°, 90°, 180°, and 270° positions. When the wafer 4 is at the 0° position, the corresponding displacement sensor measurement value is a. The wafer 4 is first rotated 90°, and the misaligned portion of the measurement point pushes the second clamping member 11 and moves, resulting in the corresponding displacement sensor measurement value b. Similarly, as the wafer 4 continues to rotate 180° and 270°, the corresponding displacement sensor measurements at the 180° and 270° measurement positions are c and d, respectively. If the center of the wafer 4 coincides with the center of the first suction table 3, the four values ​​a, b, c, and d should be approximately equal within the error tolerance. If the wafer 4 is misaligned, the first clamping member 10 and the second clamping member 11 clamp and move the wafer 4, adjusting the position of the wafer 4 so that the values ​​a, b, c, and d are equal within the error tolerance, thereby achieving centering of the wafer 4. Once the centering of the wafer 4 is complete, the wafer edge is etched in the process chamber.

[0029] In another embodiment, when correcting the center position of the wafer 4 using the first clamping member 10 and the second clamping member 11, multiple measurement points are set and compression data at the multiple measurement points is recorded. For example, the wafer 4 is slowly rotated once from its initial position of 0°. Compression data for one 360° rotation is recorded, and a periodic change relationship curve showing the angle and the displacement sensor measurement value, as shown in FIG. 5, can be obtained. In the figure, the minimum value at point O1 and the maximum value at point O2 can be obtained. As shown in FIGS. 6 and 7, the line connecting the centers of the first clamping member 10 and the second clamping member 11 is the X-axis, and the direction perpendicular to the X-axis is the Y-axis. Point O in the figure indicates the actual center position of the wafer 4, and point O' indicates the center position of the first suction table 3. Therefore, the wafer 4 rotates around point O'. When the center of the wafer is at point O1, the displacement sensor measurement value is the minimum value Z1. When the center of the wafer is at point O2, the displacement sensor measurement value is the maximum value Z2. Points O', O1, and O2 are on the same horizontal line as the centers of the two clamp members, so that the distance OO', i.e., the first shift amount of the center of the wafer 4, is (Z2-Z1) / 2. Therefore, when correcting the center position of the wafer 4, by rotating the center of the wafer 4 by a certain angle to the position of point O1 or point O2, the first clamp member 10 and the second clamp member 11 can be simultaneously moved to the right or left by a distance of (Z2-Z1) / 2.

[0030] In an actual process, the accuracy of the recording unit 13 is insufficient, and the recorded data differs from the actual situation, so the center position of the wafer needs to be further corrected using the wafer edge cleaning effect detection system 2. In another embodiment, the wafer edge cleaning effect detection system 2 includes a second suction table 20, a light source 21, a camera 22, and a calculation module.

[0031] When the edge etching of the wafer 4 is completed, the wafer 4 is transferred onto the second suction table 20 while the light source 21 is emitting light, and a light beam is applied to the surface of the wafer 4. The camera 22 captures the edge pattern of the wafer 4 after etching. The calculation module calculates the edge etching width WE based on the edge pattern.

[0032] The wafer edge cleaning effect detection system 2 also includes a determination module. Four measurement points are arranged at equal intervals along the circumferential direction of the wafer 4, i.e., one measurement point each at the 0°, 90°, 180°, and 270° positions. The edge etching widths WE corresponding to the measurement positions at 0°, 90°, 180°, and 270° are designated as i, f, g, and h, respectively. The determination module determines the deviation of the wafer 4 relative to the first chucking stand 3 based on the values ​​of i, f, g, and h, and feeds the deviation back to the data processing module. If the four values ​​of i, f, g, and h are substantially equal within the tolerance range, the concentricity between the wafer 4 and the first chucking stand 3 during the edge etching process is considered to be good.

[0033] In another embodiment, the wafer edge cleaning effect detection system 2 measures the edge etching width WE of the wafer over the entire 360° circumference after the wafer is etched. As shown in Figure 8, a periodic change relationship curve showing the angle and etching width can be obtained. In the figure, the maximum value at point A and the minimum value at point B are obtained. As shown in Figure 9, the defined directions of the X and Y axes are the same as in Figures 6 and 7, and the dashed line indicates the etching edge formed after etching is completed. The solid line indicates the actual position of the wafer 4, and the dashed line indicates the ideal position W' when the wafer and the first suction table are perfectly concentric. If the center O of the wafer 4 deviates from the center O' of the first suction table 3 during etching, points A and B must appear on the line connecting the two centers OO', and the distance between OO' is the deviation e of the center of the wafer 4. If the corresponding angle of point A is β2, the etching width is Y2, the corresponding angle of point B is β1, and the etching width is Y1, the following relationship is obtained:

[0034] [Equation 1] β2-β1=180°

[0035] [Number 2] Y2-Y1=2e

[0036] Therefore, the amount of deviation e can be calculated as OO' = e = (Y2 - Y1) / 2. At the same time, from the angle β2 corresponding to point A, the amount of deviation of the center of the wafer 4 in the X-axis direction is calculated as eX = e sin β2, and the amount of deviation of the center of the wafer 4 in the Y-axis direction is calculated as eY = ecos β2. Therefore, by calculating specific second deviation data using the above calculation method and feeding it back to the wafer centering system 1, the center of the wafer 4 can be further corrected.

[0037] [Second embodiment] Referring to FIG. 4, this embodiment provides a wafer centering adjustment method for the wafer centering adjustment apparatus according to the first embodiment, which includes the following steps: S11: The first suction table 3 suctions the wafer 4. S12: Before the wafer 4 is etched, the wafer centering system 1 measures the first deviation date when the center of the wafer 4 deviates from the center of the first suction table 3. The position of the wafer 4 is corrected based on the first deviation data and the second deviation data obtained after the previous wafer is etched so that the center of the wafer 4 coincides with the center of the first suction table 3. S13: After etching of the wafer 4 is completed, the wafer 4 is transferred to the wafer edge cleaning effect detection system 2. S14: The wafer edge cleaning effect detection system 2 measures the edge etching width of the wafer 4 after the wafer 4 has been etched, and calculates second deviation data when the center of the wafer 4 is shifted from the center of the first suction table 3 based on the edge etching width WE, and feeds back the second deviation data to the wafer centering system 1.

[0038] The wafer edge cleaning effect detection system 2 further detects the adjustment accuracy of the wafer centering system 1, and corrects the wafer position based on the first deviation data of the wafer and the second deviation data of the previous wafer before etching the next wafer, thereby effectively ensuring the uniformity of the edge etching width of the wafer.

[0039] In the above adjustment method, the wafer centering system 1 further includes a clamp assembly, a measurement module, a drive module 5, and a data processing module 14. The outer edge of the clamp assembly and the wafer 4 are always kept in contact when the wafer 4 is not displaced.

[0040] When the wafer 4 is in a displaced state, when the wafer 4 rotates, the displaced part of the wafer 4 presses the clamp assembly and moves. The measurement module measures the movement data and transmits the movement data to the data processing module 14. The data processing module 14 transmits a correction command to the drive module 5, and the drive module 5 drives and moves the clamp assembly based on the correction command. The clamp assembly clamps the wafer 4 and adjusts the position of the wafer 4 so that the center of the wafer 4 coincides with the center of the first suction table 3.

[0041] Furthermore, the measurement module includes an elastic member 12 and a displacement sensor. The clamp assembly includes a first clamp member 10 and a second clamp member 11. The first clamp member 10 and the second clamp member 11 face each other with the center of the first suction table 3 as the axis of symmetry, and the second clamp member 11 is connected to the displacement sensor by the elastic member 12.

[0042] Four measurement points are arranged at equal intervals along the circumferential direction of the wafer 4. When the wafer 4 rotates clockwise by 0°, 90°, 180°, and 270°, the corresponding measurement values of the displacement sensor are a, b, c, and d respectively.

[0043] If c < a and d < b, it indicates that the center of the wafer 4 is displaced to the first quadrant side with respect to the center of the first suction table 3, and during correction, the wafer 4 is displaced a certain distance to the third quadrant side.

[0044] Similarly, when a < c and d < b, it indicates that the center of the wafer 4 is displaced to the second quadrant side with respect to the center of the first suction table 3.

[0045] When a < c and b < d, it indicates that the center of the wafer 4 is shifted towards the third quadrant with respect to the center of the first adsorption table 3.

[0046] When c < a and b < d, it indicates that the center of the wafer 4 is shifted towards the fourth quadrant with respect to the center of the first adsorption table 3.

[0047] Furthermore, the wafer edge cleaning effect detection system 2 includes a second adsorption table 20, a light source 21, a camera 22, an arithmetic module, and a determination module.

[0048] The second adsorption table 20 adsorbs the wafer 4 after the wafer 4 has been etched. The light source 21 supplies light rays to the surface of the wafer 4, and the camera 22 acquires the edge pattern of the wafer 4 after the wafer 4 has been etched.

[0049] The measurement points are arranged at four equally spaced points along the circumferential direction of the wafer 4, and the edge etching widths WE corresponding to the measurement positions of 0°, 90°, 180°, and 270° are i, f, g, and h, respectively.

[0050] When g < i and h < f, it indicates that the center of the wafer 4 is shifted towards the first quadrant with respect to the center of the first adsorption table 3.

[0051] When i < g and h < f, it indicates that the center of the wafer 4 is shifted towards the second quadrant with respect to the center of the first adsorption table 3.

[0052] When i < g and f < h, it indicates that the center of the wafer 4 is shifted towards the third quadrant with respect to the center of the first adsorption table 3.

[0053] When g < i and f < h, it indicates that the center of the wafer 4 is shifted towards the fourth quadrant with respect to the center of the first adsorption table 3.

[0054] In another embodiment, the wafer edge cleaning effect detection system 2 measures the edge etching width WE of the wafer over the entire 360° circumference after the wafer has been etched.

[0055] e X <0, e Y If it is >0, it indicates that the center of the wafer 4 is shifted toward the first quadrant with respect to the center of the first chucking table 3 .

[0056] e X >0, e Y If it is >0, it indicates that the center of the wafer 4 is shifted toward the second quadrant with respect to the center of the first chucking table 3.

[0057] e X >0, e Y If the value is <0, it indicates that the center of the wafer 4 is shifted toward the third quadrant with respect to the center of the first chucking table 3 .

[0058] e X <0, e Y If it is <0, it indicates that the center of the wafer 4 is shifted toward the fourth quadrant with respect to the center of the first chucking table 3.

[0059] The calculation module calculates the edge etching width WE according to the edge pattern and sends the edge etching width WE to the determination module. The determination module forms second shift data according to the edge etching width WE and feeds back the second shift data to the wafer centering system 1. The wafer centering system 1 corrects the position of the wafer 4 according to the second shift data before etching the next wafer.

[0060] As mentioned above, the above embodiments are only used to explain the technical solutions of the present invention, and are not intended to limit the technical solutions. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments may be modified or some technical features may be replaced with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of each embodiment of the present invention. [Explanation of symbols]

[0061] 1. Wafer Centering System 2. Wafer edge cleaning effect detection system 3 First suction table 4 wafers 5 Drive Module 10 First clamping member 11 Second clamping member 12 Elastic member 13 Recording Unit 14 Data Processing Module 15 Laura 20 Second suction table 21 Light Source 22 Camera

Claims

1. A wafer centering adjustment apparatus including a first suction table (3), the wafer centering adjustment apparatus further including a wafer centering system (1) and a wafer edge cleaning effect detection system (2); The wafer centering system (1) is disposed in a process chamber and is used to measure first shift data when the center of the wafer (4) deviates from the center of the first suction table (3), and to correct the position of the wafer (4) before etching based on the first shift data and second shift data obtained after the previous wafer has been etched so that the center of the wafer (4) coincides with the center of the first suction table (3); The wafer edge cleaning effect detection system (2) is disposed outside the process chamber, measures the edge etching width WE of the wafer (4) after etching, obtains the second deviation data of the center of the wafer (4) from the center of the first suction table (3) based on the edge etching width WE, and feeds the second deviation data back to the wafer centering system (1), thus forming a wafer centering adjustment device.

2. The wafer centering system (1) comprises a clamp assembly, a measurement module, a drive module (5), and a data processing module (14); the clamp assembly is connected to the measurement module, the clamp assembly contacts the outer edge of the wafer (4) when the wafer (4) is not misaligned, and the drive module (5) is connected to the clamp assembly; 2. The wafer centering adjustment device of claim 1, wherein the measurement module is used to measure movement data generated by the clamp assembly when the wafer (4) rotates and transmit the movement data to a data processing module (14), the data processing module (14) is used to transmit a correction command to the drive module (5) when the center of the wafer (4) deviates from the center of the first suction table (3), the drive module (5) is used to drive the clamp assembly to move based on the correction command, and the clamp assembly is used to correct the position of the wafer (4).

3. the measuring module comprises an elastic member (12) and a recording unit (13); the clamping assembly comprises a first clamping member (10) and a second clamping member (11), the first clamping member (10) and the second clamping member (11) being symmetrically arranged on both sides of the first suction table (3); the second clamping member (11) is connected to the recording unit (13) by the elastic member (12); and the recording unit (13) is used to record the compression amount of the elastic member (12); When the wafer (4) is in a non-shifted state, the recording unit (13) records the initial compression amount; 3. The wafer centering adjustment device of claim 2, wherein when the wafer (4) is in a misaligned state, the misaligned portion of the wafer (4) presses the second clamping member (11) to move it toward the elastic member (12) while the wafer (4) is rotating, the recording unit (13) records data on the amount of compression, the data processing module (14) sends a correction command to the driving module (5) based on the data on the amount of compression, and the driving module (5) drives the first clamping member (10) and the second clamping member (11) so that the center of the wafer (4) coincides with the center of the first suction table (3), thereby clamping the wafer (4) for movement.

4. 4. The wafer centering adjustment device of claim 3, wherein the recording unit (13) is a displacement sensor, four measurement points are arranged at regular intervals along the circumferential direction of the wafer (4), when the wafer (4) rotates to the positions of the four measurement points, the corresponding measurement values ​​of the displacement sensor are a / b / c / d, respectively, and the first clamping member (10) and the second clamping member (11) are used to correct the center position of the wafer (4), and when the corresponding measurement values ​​of the displacement sensor are a / b / c / d, respectively, the first clamping member (10) and the second clamping member (11) are used to correct the center position of the wafer (4) so ​​that the values ​​of a, b, c, and d become equal within an allowable error range.

5. 4. The wafer centering adjustment device according to claim 3, wherein the clamp assembly is in four-point contact with the wafer (4), and cylindrical rollers are attached to the first clamp member (10) and the second clamp member (11) at positions where the first clamp member (10) and the second clamp member (11) contact the wafer (4).

6. 4. The wafer centering adjustment device according to claim 3, wherein the recording unit (13) records data on the amount of compression of the wafer (4) for one rotation, determines a periodic change relationship curve indicating the angle and the measurement value of the displacement sensor, defines the minimum value of the data on the amount of compression as Z1, the maximum value of the data on the amount of compression as Z2, and sets the first deviation data to (Z2-Z1) / 2.

7. The wafer edge cleaning effect detection system (2) comprises a second suction table (20), a camera (22), and a calculation module; 2. The wafer centering adjustment device according to claim 1, wherein the second suction table (20) is used to suction the etched wafer (4), the camera (22) is used to acquire an edge pattern of the etched wafer (4), and the calculation module is used to calculate an edge etching width WE according to the edge pattern.

8. The wafer edge cleaning effect detection system (2) further comprises a determination module; 8. The wafer centering adjustment device according to claim 7, wherein four measurement points are arranged at equal intervals along the circumferential direction of the wafer (4), the edge etching widths WE corresponding to the four measurement points are i / f / g / h, respectively, and the determination module determines the deviation status of the wafer (4) relative to the first suction table (3) based on the values ​​of i / f / g / h, and feeds back the deviation status to the wafer centering system (1).

9. The wafer edge cleaning effect detection system (2) measures the edge etching width WE of the wafer (4) after etching over the entire circumference, and obtains a periodic change relationship curve showing the angle and etching width; If the angle corresponding to the maximum value at point A is β2, the etching width is Y2, the angle corresponding to the minimum value at point B is β1, the etching width is Y1, and the deviation amount of the center of the wafer (4) is e, the following relational expression is obtained: β２－β１＝１８０° Y2-Y1=2e Calculate e = (Y2 - Y1) / 2 and calculate the displacement of the center of the wafer (4) in the X-axis direction as e Ｘ = esinβ2, the deviation of the center of the wafer (4) in the Y-axis direction is e Ｙ 8. The wafer centering adjustment apparatus according to claim 7, wherein: = ecos β2.

10. A method for adjusting the centering of a wafer, comprising: a step in which a first suction stand (3) suctions a wafer (4); Before the wafer (4) is etched, the wafer centering system (1) measures first deviation data of the center of the wafer (4) from the center of the first suction table (3), and corrects the position of the wafer (4) based on the first deviation data and second deviation data obtained after the previous wafer is etched so that the center of the wafer (4) coincides with the center of the first suction table (3); After etching of the wafer (4) is completed, the wafer (4) is transferred to a wafer edge cleaning effect detection system (2); a wafer edge cleaning effect detection system (2) measuring an edge etching width of the wafer (4) after etching, acquiring second deviation data of the center of the wafer (4) deviating from the center of the first suction table (3) based on the edge etching width WE, and feeding back the second deviation data to the wafer centering system (1).

11. The wafer centering system (1) comprises a clamp assembly, a measurement module, a drive module (5), and a data processing module (14), and when the wafer (4) is not misaligned, the clamp assembly is in contact with the outer edge of the wafer (4); 11. The wafer centering adjustment method according to claim 10, wherein when the wafer (4) is in a misaligned state, as the wafer (4) rotates, the misaligned portion of the wafer (4) pushes and moves the clamp assembly, the measurement module measures the movement data and transmits the movement data to the data processing module (14), the data processing module (14) transmits a correction command to the drive module (5), the drive module (5) drives the clamp assembly to move based on the correction command, and the clamp assembly clamps the wafer (4) so ​​that the center of the wafer (4) coincides with the center of the first suction table (3).

12. The measurement module includes an elastic member (12) and a displacement sensor, the clamp assembly includes a first clamp member (10) and a second clamp member (11), the first clamp member (10) and the second clamp member (11) are symmetrically arranged on both sides of the first suction base (3), and the second clamp member (11) is connected to the displacement sensor by the elastic member (12); 12. The method for adjusting wafer centering according to claim 11, wherein, during rotation of the wafer (4), the misaligned portion of the wafer (4) pushes the second clamping member (11) to move toward the elastic member (12), the displacement sensor records data on the amount of compression, and based on the data on the amount of compression, the driving module (5) drives the first clamping member (10) and the second clamping member (11) to clamp the wafer (4) for movement so that the center of the wafer (4) coincides with the center of the first suction table (3).

13. Four measurement points are arranged at equal intervals along the circumferential direction of the wafer (4), and when the wafer (4) rotates to the positions of the four measurement points, the corresponding measurement values ​​of the displacement sensor become a / b / c / d, respectively; If c<a and d<b, it indicates that the center of the wafer (4) is shifted toward the first quadrant with respect to the center of the first suction table (3), If a<c and d<b, it indicates that the center of the wafer (4) is shifted toward the second quadrant with respect to the center of the first suction table (3); If a<c and b<d, it indicates that the center of the wafer (4) is shifted toward the third quadrant with respect to the center of the first suction table (3), 13. The method for adjusting wafer centering according to claim 12, wherein when c<a and b<d, it indicates that the center of the wafer (4) is shifted toward the fourth quadrant with respect to the center of the first suction table (3).

14. 13. The wafer centering adjustment method according to claim 12, wherein the displacement sensor records data on the amount of compression of the wafer (4) for one rotation, calculates a periodic change relationship curve indicating the angle and the measurement value of the displacement sensor, defines a minimum value of the data on the amount of compression as Z1, defines a maximum value of the data on the amount of compression as Z2, and the first deviation data is (Z2-Z1) / 2.

15. The wafer edge cleaning effect detection system (2) includes a second suction table (20), a camera (22), a calculation module, and a determination module; 11. The wafer centering adjustment method according to claim 10, wherein the second suction table (20) suctions the etched wafer (4), the camera (22) captures an edge pattern of the etched wafer (4), the calculation module calculates an edge etching width WE according to the edge pattern, and sends the edge etching width WE to a determination module, which forms second deviation data according to the edge etching width WE, and feeds back the second deviation data to the wafer centering system (1).

16. Four measurement points are arranged at equal intervals along the circumferential direction of the wafer 4, and the edge etching widths WE corresponding to the measurement points are defined as i, f, g, and h, respectively. If g<i and h<f, it indicates that the center of the wafer (4) is shifted toward the first quadrant with respect to the center of the first suction table (3), If i<g and h<f, it indicates that the center of the wafer (4) is shifted toward the second quadrant with respect to the center of the first suction table (3), If i<g and f<h, it indicates that the center of the wafer (4) is shifted toward the third quadrant with respect to the center of the first suction table (3), 16. The method for adjusting wafer centering according to claim 15, wherein if g<i and f<h, it indicates that the center of the wafer (4) is shifted toward the fourth quadrant with respect to the center of the first suction table (3).

17. The wafer edge cleaning effect detection system (2) measures the edge etching width WE of the wafer (4) after etching over the entire circumference, and obtains a periodic change relationship curve showing the angle and etching width, in a wafer centering adjustment method, If the angle corresponding to the maximum value of point A is β2, the etching width is Y2, the angle corresponding to the minimum value of point B is β1, the etching width is Y1, and the deviation amount of the center of the wafer (4) is e, the following relational expression is obtained: β２－β１＝１８０° Y2-Y1=2e e = (Y2 - Y1) / 2, and the deviation of the center of the wafer (4) in the X-axis direction is e Ｘ = e sin β2, and the deviation of the center of the wafer (4) in the Y-axis direction is e Ｙ = ecosβ2, e Ｘ <0, e Ｙ If the value is greater than 0, it indicates that the center of the wafer (4) is shifted toward the first quadrant with respect to the center of the first suction table (3), e Ｘ >0, e Ｙ If it is >0, it indicates that the center of the wafer (4) is shifted toward the second quadrant with respect to the center of the first suction table (3); e Ｘ >0, e Ｙ If the value is less than 0, it indicates that the center of the wafer (4) is shifted toward the third quadrant with respect to the center of the first suction table (3), e Ｘ <0, e Ｙ 16. The method for adjusting wafer centering according to claim 15, wherein if <0, it indicates that the center of the wafer (4) is shifted toward the fourth quadrant with respect to the center of the first suction table (3).

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