Method for collective dishing of singulated dies - Patent Application 20070122999

Abstract

A method for substrate processing includes mounting a plurality of dies on a first carrier, each die having a first side and a second side opposite the first side, the first side being mounted on the first carrier, and the plurality of dies being horizontally spaced apart from one another on the first carrier; filling spaces between the plurality of dies with a dielectric or metal and covering the second sides of the plurality of dies; grinding or polishing the dielectric or metal covering the second sides until the second sides are exposed and the plurality of dies have a substantially uniform thickness; and after grinding or polishing, dishing the die faces of the plurality of dies to a desired dishing profile.

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure generally relate to substrate processing methods, and more particularly to methods for collectively dishing multiple dies. [Background technology]

[0002] In semiconductor production, a die is an area of ​​a silicon wafer where functional circuits are fabricated. Hundreds of identical dies can be fabricated on each wafer. Chemical mechanical planarization (CMP) is typically performed across the entire wafer before wafer dicing and die singulation. However, there is often thickness variation from wafer to wafer. As a result of such thickness variation, in multi-die packages composed of dies from different wafers, the dies are often attached (e.g., hybrid bonded) to the substrate one by one. Such serial processing increases handling steps and process time.

[0003] Furthermore, each semiconductor wafer undergoes pre-treatment processing (e.g., cleaning, plasma, hydration), so all of the dies on a wafer are typically pre-treated together after dicing on a film frame, making latency control a challenge for multi-die packages where the dies come from different diced wafers.

[0004] Thus, as described in more detail herein, the inventors provide a novel method for processing a substrate that enables collective planarization and dishing of the dies and collective attachment of the dies to the substrate, which can reduce handling steps and process time as well as improve process control. Summary of the Invention

[0005] Provided herein is a method for substrate processing. In some embodiments, the method for substrate processing includes mounting a plurality of dies to a first carrier, each die having a first side and a second side opposite the first side, the first side being mounted to the first carrier, and the plurality of dies being horizontally spaced apart from one another on the first carrier; filling spaces between the plurality of dies with a dielectric or metal and covering the second sides of the plurality of dies; grinding or polishing the dielectric or metal covering the second sides until the second sides are exposed and the plurality of dies have a substantially uniform thickness; and dishing the die faces of the plurality of dies to a desired dishing profile after grinding or polishing.

[0006] In some embodiments, a method of substrate processing includes mounting a plurality of dies face down on a first carrier, wherein the plurality of dies are horizontally spaced apart from one another on the first carrier; filling spaces between the plurality of dies and covering backsides of the plurality of dies with a dielectric or metal; grinding or polishing the dielectric or metal covering the backsides of the plurality of dies and grinding or polishing the backsides of the plurality of dies until the backsides are exposed and the plurality of dies have a substantially uniform thickness; after grinding or polishing, attaching a second carrier to the backsides of the plurality of dies and removing the first carrier to expose die faces of the plurality of dies; dishing the die faces of the plurality of dies to a desired dishing profile; and after dishing the die faces, removing the dielectric or metal in at least one space between the plurality of dies.

[0007] In another embodiment, a method of substrate processing includes mounting a plurality of dies face up on a first carrier, wherein the plurality of dies are horizontally spaced apart from one another on the first carrier; filling spaces between the plurality of dies and covering faces of the plurality of dies with a dielectric or metal; grinding or polishing the dielectric or metal covering the die faces of the plurality of dies until the die faces are exposed and all of the dies have a substantially uniform thickness; dishing the die faces of the plurality of dies to a desired dishing profile after grinding or polishing; and removing the dielectric or metal from at least one space between the plurality of dies after dishing the die faces.

[0008] Other and further embodiments of the present disclosure are described below.

[0009] Embodiments of the present disclosure, briefly summarized above and discussed in more detail below, can be understood by reference to the exemplary embodiments of the present disclosure as illustrated in the accompanying drawings. However, the accompanying drawings depict only typical embodiments of the present disclosure and therefore should not be considered limiting in scope, as the present disclosure may admit of other equally effective embodiments. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a flow diagram of a method of substrate processing according to an embodiment of the present disclosure. [Figure 2] 1 is a flow diagram of a method of substrate processing according to an embodiment of the present disclosure. [Figure 3A] FIG. 3 is a schematic diagram illustrating steps of the method of FIG. 2. [Figure 3B] FIG. 3 is a schematic diagram illustrating steps of the method of FIG. 2. [Figure 3C] FIG. 3 is a schematic diagram illustrating steps of the method of FIG. 2. [Figure 3D] FIG. 3 is a schematic diagram illustrating steps of the method of FIG. 2. [Figure 3E] FIG. 3 is a schematic diagram illustrating steps of the method of FIG. 2. [Figure 3F] FIG. 3 is a schematic diagram illustrating steps of the method of FIG. 2. [Figure 3G] FIG. 3 is a schematic diagram illustrating steps of the method of FIG. 2. [Figure 4] 1A-1C illustrate dielectric or metal removal and hybrid bonding according to embodiments of the present disclosure. [Figure 5] 1A-1C illustrate dielectric or metal removal and hybrid bonding according to embodiments of the present disclosure. [Figure 6] FIG. 1 illustrates multiple dies collectively attached to a substrate according to an embodiment of the present disclosure. [Figure 7] FIG. 1 illustrates multiple dies collectively attached to a substrate according to an embodiment of the present disclosure. [Figure 8] 1 is a flow diagram of a method of substrate processing according to an embodiment of the present disclosure. [Figure 9A] 9 is a schematic diagram illustrating steps of the method of FIG. 8. [Figure 9B] 9 is a schematic diagram illustrating steps of the method of FIG. 8. [Figure 9C] 9 is a schematic diagram illustrating steps of the method of FIG. 8. [Figure 9D] 9 is a schematic diagram illustrating steps of the method of FIG. 8. [Figure 9E] 9 is a schematic diagram illustrating steps of the method of FIG. 8. [Figure 9F] 9 is a schematic diagram illustrating steps of the method of FIG. 8. DETAILED DESCRIPTION OF THE INVENTION

[0011] For ease of understanding, identical reference numbers have been used, where possible, to designate identical elements common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further elaboration.

[0012] Embodiments of methods for substrate processing are provided herein. The methods for processing a substrate described herein enable collective planarization and dishing of dies and collective attachment of multiple dies to a substrate. The methods described herein enable improved thickness control of multiple dies packaged together on a substrate, as well as improved dishing control for improved die bonding. Furthermore, the methods described herein enable package-level collective die-to-substrate bonding, which can reduce the number of handling steps compared to sequential die-to-substrate bonding.

[0013] 1 is a flow diagram of a method 100 of substrate processing according to an embodiment of the present disclosure. In some embodiments, the method may begin at 102 by providing singulated dies from one or more substrates. For example, in some embodiments, one or more substrates may be provided, sorted, and diced.

[0014] In some embodiments, multiple dies can be attached to the first carrier at 104. In some embodiments, the multiple dies attached to the first carrier can include singulated dies from different substrates. In some embodiments, the multiple dies attached to the first carrier can be from the same substrate. In some embodiments, the first carrier can be made of silicon or glass, and the dies can be adhesively attached to the first carrier. Each die can have a first side and a second side opposite the first side, the first side attached to the first carrier, and the multiple dies can be horizontally spaced apart from one another on the first carrier. For example, the dies can have a face on the first side or the second side, so that in some embodiments, the dies can be attached to the first carrier face-up or face-down, as discussed in more detail below.

[0015] In some embodiments, at 106, spaces between the multiple dies can be filled with a dielectric, and second sides of the multiple dies can be covered with a dielectric. In some embodiments, spaces between the multiple dies can be filled with a metal, and second sides of the multiple dies can be covered with a metal, for example, to facilitate heat dissipation and shielding. In some embodiments, such filling can include molding, depositing, or coating a dielectric or metal. In some embodiments, the dielectric can include at least one of a polymer, an oxide, or a nitride.

[0016] In some embodiments, at 108, the dielectric or metal covering the second side can be ground or polished, and the second side can be ground or polished until the second side is exposed and the plurality of dies has a substantially uniform thickness. In some embodiments, at 110, after grinding or polishing, the die faces of the plurality of dies can be dished to a desired dishing profile to prepare the plurality of dies for attachment to a substrate, such as by hybrid bonding. The plurality of dies may be collectively dished in a CMP process to achieve the desired dishing profile. Thus, in some embodiments, at end 112 of method 100, the plurality of dies are prepared for collectively attaching to a substrate, such as by hybrid bonding. As discussed above, collective die-to-substrate bonding with controlled die thickness and dishing can advantageously reduce the number of handling steps and decrease process time. Furthermore, method 100 can improve process and defect control by enabling fewer handling steps after die singulation.

[0017] 2 is a flow diagram of another method 200 of substrate processing according to an embodiment of the present disclosure. In some embodiments, the method may begin at 202 by providing one or more substrates 302, sorting the substrates, and dicing the substrates into singulated dies 304, for example, as shown in FIGS. 3A and 3B.

[0018] In some embodiments, at 204, multiple dies 304 may be mounted face-down on a first carrier 306, for example, as shown in FIG. 3C. In some embodiments, the multiple dies 304 mounted on the first carrier 306 may include singulated dies from different substrates 302. In some embodiments, the multiple dies 304 mounted on the first carrier 306 may be from the same substrate 302. In some embodiments, the first carrier 306 may be made of silicon or glass, and the dies 304 may be adhesively mounted to the first carrier 306. The multiple dies 304 may be horizontally spaced apart from one another on the first carrier 306, leaving spaces 308 between the dies 304, for example, as shown in FIG. 3C.

[0019] In some embodiments, at 206, the spaces 308 between the multiple dies 304 may be filled with a dielectric or metal 310, and the backsides 312 of the multiple dies 304 may be covered with the dielectric or metal 310, for example, as shown in FIG. 3D. In some embodiments, the filling may include molding, depositing, or coating the dielectric or metal 310. Further, in some embodiments, the dielectric 310 may include at least one of a polymer, an oxide, or a nitride.

[0020] In some embodiments, at 208, the dielectric or metal 310 covering the backside 312 can be ground or polished, for example, until the backside 312 is exposed and the plurality of dies 304 has a substantially uniform thickness, as shown in FIG. 3E. In some embodiments, at 210, a second carrier 314 can be attached to the backside 312 (as well as the exposed side 318 of the dielectric or metal 310) of the plurality of dies 304, and the first carrier 306 can be removed from the die faces 316 of the plurality of dies 304 to expose the die faces 316, as shown in FIG. 3F. In some embodiments, after removing the first carrier 306, the die faces 316 of the plurality of dies 304 can be dished to a desired dishing profile to prepare the plurality of dies 304 for attachment, such as by hybrid bonding. The plurality of dies 304 can be dished, for example, in a CMP process, as shown in FIG. 3G, to achieve the desired dishing profile.

[0021] After dishing the plurality of dies 304, at 214, the dielectric or metal 310 may be removed from at least one space 308 between the plurality of dies 304, for example, as shown in Figures 4 and 5. For example, Figure 4 illustrates an embodiment in which the dielectric or metal 310 between all of the spaces 308 is removed, while Figure 5 illustrates an embodiment in which the dielectric or metal 310 is not removed from all of the spaces 308. The method may end at 216, after which further processing may occur.

[0022] For example, in some embodiments, following completion of method 200 at 216, multiple dies 304 may be collectively attached to substrate 602, such as by hybrid bonding. For example, Figures 4 and 5 illustrate embodiments in which multiple dies 304 are hybrid bonded by die-to-wafer (D2W) bonding 402 or collective die-to-wafer (CoD2W) bonding 404.

[0023] According to some embodiments, the plurality of dies 304 shown in the embodiment of Figure 5 can be hybrid bonded to a substrate 602, as shown in Figure 6. As shown in Figure 6, the plurality of dies 304 are collectively hybrid bonded to the substrate 602, and the second carrier 314 is detached from the plurality of dies 304. According to some embodiments, as shown in Figure 7, the bonded plurality of dies 304 can include a portion of a die package 702 attached to the substrate 602, which can be a circuit board.

[0024] 8 is a flow diagram of another method 800 of substrate processing according to an embodiment of the present disclosure. In some embodiments, the method can begin at 802 by providing one or more substrates 902, sorting the substrates, and dicing the substrates 902 into singulated dies 904, for example, as shown in FIGS. 9A and 9B.

[0025] In some embodiments, at 804, multiple dies 904 can be mounted face-up on a first carrier 906, for example, as shown in FIG. 9C . In some embodiments, the multiple dies 904 mounted on the first carrier 906 can include singulated dies from different substrates 902. In some embodiments, the multiple dies 904 mounted on the first carrier 906 can be from the same substrate 902. In some embodiments, the first carrier 906 can be made of silicon or glass, and the multiple dies 904 can be adhesively mounted to the first carrier 906. The multiple dies 904 can be horizontally spaced apart from one another on the first carrier 906, forming spaces 908 between the dies 904, for example, as shown in FIG. 9C .

[0026] In some embodiments, at 806, spaces 908 between the multiple dies 904 may be filled with a dielectric or metal 910, and die faces 916 of the multiple dies 904 may be covered with the dielectric or metal 910, for example, as shown in FIG. 9D . In some embodiments, such filling may include molding, depositing, or coating the dielectric or metal 910. Further, in some embodiments, the dielectric 910 may include at least one of a polymer, an oxide, or a nitride.

[0027] In some embodiments, at 808, the dielectric or metal 910 covering the die faces 916 of the plurality of dies 904 can be ground or polished, for example, as shown in FIG. 9E, until the die faces 916 are exposed and the plurality of dies 904 have a substantially uniform thickness. In some embodiments, at 810, the die faces of the plurality of dies 904 can be dished to a desired dishing profile to prepare the plurality of dies 904 for attachment, such as by hybrid bonding. The plurality of dies 904 can be dished with a CMP process to achieve the desired dishing profile, for example, as shown in FIG. 9F. After dishing the plurality of dies 904, at 812, the dielectric or metal 910 can be removed from at least one space 908 between the plurality of dies 904, as described above with respect to FIGS. 4 and 5. The method 800 can end at 814, after which further processing, such as hybrid bonding the plurality of dies 904, can be performed, as described above with respect to FIGS. 4-7.

[0028] Compared to method 200, method 800 may include fewer process steps. However, because grinding or polishing is performed on the die faces 916 of the multiple dies 904 (rather than the backsides of the dies 904), the initial thickness variation among the multiple dies 904 before grinding or polishing must be tightly controlled to avoid large thickness variations in the die faces 916 during CMP processing. On the other hand, because method 200 polishes and grinds the backsides 312 of the multiple dies 304, there is less opportunity for thickness variations in the thickness of the die faces 316 during CMP processing. Therefore, method 800 may be useful for processing singulated dies having similar thicknesses, such as dies originating from the same substrate.

[0029] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof.

Claims

1. 1. A method of processing a substrate, comprising: mounting a plurality of dies to a first carrier, each die having a first side and a second side opposite the first side, the first side being mounted to the first carrier, and the plurality of dies being horizontally spaced apart from one another on the first carrier; filling spaces between the dies and covering the second sides of the dies with a dielectric or metal; grinding or polishing the dielectric or metal covering the second side until the second side is exposed and the plurality of dies have a substantially uniform thickness; After grinding or polishing, dishing the die faces of the plurality of dies to a desired dishing profile. A method comprising:

2. The method of claim 1 , wherein the die face is on the first side of the plurality of dies.

3. 3. The method of claim 2, further comprising, after grinding or polishing, attaching a second carrier to the second side of the plurality of dies and removing the first carrier to expose the die faces of the first side of the plurality of dies for dishing.

4. The method of claim 1 , wherein the die face is on the second side of the plurality of dies.

5. The method of claim 1 , further comprising removing the dielectric or metal between at least one space between the plurality of dies after dishing the die faces.

6. The method of claim 1 , further comprising, after dishing the die faces, removing the dielectric or metal between all of the spaces between the plurality of dies.

7. The method of claim 1 , wherein the filling comprises molding, depositing, or coating the dielectric or metal.

8. The method of claim 1 , wherein the dielectric comprises a polymer, an oxide, or a nitride.

9. The method of claim 1 , wherein the plurality of dies comprises dies singulated from different substrates.

10. The method of claim 1 , further comprising hybrid bonding the plurality of dies to a substrate.

11. The method of claim 3 , further comprising removing the dielectric or metal between at least one space between the plurality of dies after dishing the die faces.

12. The method of claim 11 , further comprising, after dishing, removing the dielectric or metal between all of the spaces between the plurality of dies.

13. The method of claim 11 , wherein the filling comprises molding, depositing, or coating the dielectric or metal.

14. The method of claim 11 , wherein the dielectric comprises a polymer, an oxide, or a nitride.

15. The method of claim 11 , further comprising hybrid bonding the plurality of dies to a substrate.

16. The method of claim 4 , further comprising removing the dielectric or metal between at least one space between the plurality of dies after dishing the die faces.

17. 17. The method of claim 16, further comprising, after dishing, removing the dielectric or metal between all of the spaces between the plurality of dies.

18. The method of claim 16 , wherein the filling comprises molding, depositing, or coating the dielectric or metal.

19. The method of claim 16 , wherein the dielectric comprises a polymer, an oxide, or a nitride.

20. The method of claim 16 , further comprising hybrid bonding the plurality of dies to a substrate.

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