Thermal Choke Plate

Abstract

An exemplary choke plate for use in a substrate processing system may include a plate defining a first aperture therethrough and a second aperture therethrough. The second aperture may be laterally offset from the first aperture. The plate may include a flange defining a purge inlet. The plate may include a rim defining a plurality of purge outlets in fluid communication with the purge inlet. Each of the plurality of purge outlets may be in fluid communication with a first aperture.

Description

[Technical Field]

[0001]

[0001] This application claims the benefit of and priority to U.S. patent application Ser. No. 18 / 076,234, entitled "THERMAL CHOKE PLATE," filed Dec. 6, 2022, the entire contents of which are incorporated herein by reference.

[0002]

[0002] The present technology relates to semiconductor processing equipment, and more particularly to semiconductor chamber components and methods of substrate processing. [Background technology]

[0003]

[0003] Temperature non-uniformities across a substrate during substrate processing can lead to non-uniform and inconsistent substrates. Such non-uniformities can occur when a faceplate, located opposite a pedestal supporting the substrate, sublimes along its surface. This sublimation can lead to temperature non-uniformities across the substrate during processing. To avoid this sublimation, it would be beneficial to properly purge the faceplate during substrate processing. However, the flow rates required to purge the faceplate in conventional substrate processing system designs are not sufficient to prevent faceplate sublimation.

[0004]

[0004] Thus, it would be beneficial to optimize semiconductor processing equipment to purge substrate processing regions at increased heights.

[0005] Furthermore, contaminants within semiconductor substrates can adversely affect the performance and quality of the substrates. Thus, substrate processing environments are targeted to minimize the risk of contaminants, potentially originating from components within the semiconductor processing equipment itself, being introduced into the substrate during processing. For example, stainless steel components may react with purge gases, such as nitrogen trifluoride, to form metallic contaminants during corrosion, which can then be introduced into the substrate during processing. While these stainless steel components may have coatings to protect the stainless steel material from reaction with the purge gas, at sufficiently high temperatures (e.g., temperatures at which substrates are processed, such as 400°C), these coatings can peel off, exposing the stainless steel material to oxidation and corrosion. Such heat can further exacerbate this problem by increasing the rate of oxidation and corrosion of exposed stainless steel components, further increasing the risk of contaminants being introduced into the substrate processing environment.

[0006]

[0006] Thus, it would be further beneficial to minimize the risk of stainless steel components within the substrate processing environment reacting with the purge gas to form contaminants. Summary of the Invention

[0007] An exemplary choke plate for use in a substrate processing system may include a plate defining a first aperture therethrough and a second aperture therethrough. The second aperture may be laterally offset from the first aperture. The plate may include a flange defining a purge inlet. The plate may include a rim defining a plurality of purge outlets in fluid communication with the purge inlet. Each of the plurality of purge outlets may be in fluid communication with a first aperture.

[0008] In some embodiments, the purge inlet may be defined along a top surface of the flange. The purge inlet may be defined along a bottom surface of the flange. The rim may at least partially define a first plenum, a second plenum, and at least one baffle extending between the first plenum and the second plenum and fluidly connecting the first plenum and the second plenum. The first plenum, the second plenum, and the baffle may be fluidly coupled to the purge inlet and a plurality of purge outlets. The at least one baffle may include a plurality of baffles. The plurality of baffles may include a first baffle and a second baffle. The first baffle may have a different cross-sectional area than the second baffle. The first baffle may be closer to the purge inlet than the second baffle. The first baffle may have a smaller cross-sectional area than the second baffle. The choke plate may include a closure plate. The closure plate may be engaged with the rim to define a first plenum, a second plenum, and a baffle therebetween.

[0009] Some embodiments of the present technique may include a substrate processing system. The system may include a chamber body defining a transfer region. The system may include a substrate support disposed within the transfer region. The system may include a lid plate mounted on the chamber body. The lid plate may define an aperture therethrough. The system may include a choke plate mounted on the lid plate along a first surface of the choke plate. The choke plate may define a first aperture therethrough and a second aperture therethrough. The second aperture may be laterally offset from the first aperture. The choke plate may include a flange defining a purge inlet. The choke plate may include a rim defining a plurality of purge outlets in fluid communication with the purge inlet. Each of the plurality of purge outlets may be in fluid communication with the first aperture. The system may include a pumping liner mounted on the choke plate. The system may include a face plate mounted on the pumping liner.

[0010] In some embodiments, the chamber body can define a channel in communication with the purge inlet to form a portion of the processing purge flow path. The system can include a bellows coupled to a lower surface of the substrate support. The bellows can include a flange having an RF gasket disposed thereon that is aligned with the rim of the choke plate along a vertical axis. The substrate support can be vertically translatable within a transfer region between a transfer position and a processing position. In the processing position, the bellows can be expanded and the RF gasket can contact the rim of the choke plate to close the RF reflection path. In the transfer position, the bellows can be contracted and the RF gasket can be vertically spaced from the rim of the choke plate. The rim of the choke plate can have a length between about 70 mm and 100 mm.

[0011] Some embodiments of the present technology may include a substrate processing system that may include a chamber body defining a transfer region. The system may include a substrate support disposed within the transfer region. The substrate support may include a ground plate. The substrate support may include a first isolator disposed on the ground plate. The substrate support may include a second isolator disposed on the first isolator.

[0012] The upper isolator may define a first set of recesses extending from a surface of the first isolator, and the second isolator may define a second set of recesses extending from a surface of the second isolator. The heights of the first and second sets of recesses may be equal. The height of the first set of recesses may be different from the height of the second set of recesses. The surface of the first isolator may be a top surface, and the first set of recesses may extend from the top surface. The surface of the second isolator may be a bottom surface, and the second set of recesses may extend from the bottom surface. The first isolator may define a third set of recesses extending from the bottom surface of the first isolator. The system may include an outer isolator mounted on at least a portion of the first isolator. The upper isolator may define a ledge. The outer isolator may include a flange mounted on the ledge.

[0013] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0014] [Figure 1A]

[0014] FIG. 1 shows a schematic top view of an exemplary processing tool in accordance with some embodiments of the present technique. [Figure 1B]

[0015] 1 shows a schematic partial cross-sectional view of an exemplary processing system in accordance with some embodiments of the present technique; [Figure 2]

[0016] 1 is a schematic isometric view of a transfer section of an exemplary substrate processing system, in accordance with some embodiments of the present technique; [Figure 3]

[0017] 1 shows a cross-sectional view of an exemplary system layout of an exemplary substrate processing system, in accordance with some embodiments of the present technique; [Figure 4]

[0018] 4 illustrates a top isometric view of a choke plate of the substrate processing system of FIG. 3. [Figure 5]

[0019] 4 illustrates a bottom isometric view of a choke plate of the substrate processing system of FIG. 3. [Figure 6]

[0020] 5 shows a cross-sectional view of the choke plate of FIG. 4 taken along section AA. [Figure 7]

[0021] 5 shows a cross-sectional view of the choke plate of FIG. 4 taken along section BB. [Figure 8]

[0022] 5 shows a cross-sectional view of the choke plate of FIG. 4 taken along section CC. [Figure 9]

[0023] 1 shows a partial cross-sectional view of an exemplary system layout of an exemplary substrate processing system, in accordance with some embodiments of the present technique; [Figure 10]

[0024] 4 illustrates a top isometric view of the isolator and various components of the substrate processing system of FIG. 3. [Figure 11]

[0025] 11 shows a cross-sectional view of the isolator and various components of the substrate processing system of FIG. 10. [Figure 12]

[0026]

[0023] Fig. 10 shows a top isometric view of a bellows in accordance with some embodiments of the present technology. [Figure 13]

[0027] 13 shows a cross-sectional side view of the bellows of FIG. 12. [Figure 14]

[0028] 1 shows a partial cross-sectional view of a bellows in a processing chamber in accordance with some embodiments of the present technique; [Figure 15]

[0029] 1 shows a partial cross-sectional view of a bellows in a processing chamber in accordance with some embodiments of the present technique; [Figure 16]

[0030] 1 shows a partial cross-sectional view of a bellows in a processing chamber in accordance with some embodiments of the present technique; [Figure 17]

[0031] 1 shows a partial cross-sectional view of a bellows in a processing chamber in accordance with some embodiments of the present technique; DETAILED DESCRIPTION OF THE INVENTION

[0015]

[0032] Substrate processing can involve time-consuming steps to add, remove, or otherwise modify material on a wafer or semiconductor substrate. Efficient substrate movement can reduce wait times and increase substrate throughput. To increase the number of substrates processed within a cluster tool, additional chambers can be incorporated into the mainframe. While transfer robots and processing chambers can be continually added by lengthening the tool, space efficiency can become inefficient as the footprint of the cluster tool expands. Therefore, the present technology can include cluster tools with an increased number of processing chambers within a defined footprint. To accommodate the limited footprint around the transfer robot, the present technology can increase the number of processing chambers laterally outward from the robot. For example, some conventional cluster tools may include one or two processing chambers positioned around a centrally located section of the transfer robot to maximize the number of chambers radially around the robot. The present technology can extend this concept by incorporating additional chambers laterally outward as another row or group of chambers. For example, the techniques may be applied in a cluster tool that includes three, four, five, six, or more processing chambers each accessible from one or more robot access locations.

[0016]

[0033] However, as additional process locations are added, accessing these locations from the central robot may no longer be feasible without adding transfer capabilities to each location. Some prior art may include wafer carriers on which substrates remain in place during transfer. However, the wafer carriers may contribute to thermal non-uniformities and particle contamination on the substrates. The present technology overcomes these issues by incorporating a transfer section vertically aligned with the processing chamber area and a carousel or transfer device that can operate in cooperation with the central robot to access the additional wafer locations.

[0017]

[0034] Furthermore, conventional faceplates can experience sublimation, leading to temperature uniformity issues across the faceplate. To mitigate these issues, conventional systems incorporate a purge gas introduced into the chamber from the bottom of the chamber. However, such purge gas designs have several drawbacks. For example, bottom purging can result in metal contamination on the wafer because the purge gas can destroy the oxides on stainless steel chamber components, including the pedestal's bottom ground plate. Furthermore, in multi-chamber systems that share a single transfer space (but each chamber has its own separate process / reaction space), introducing purge gas from the bottom of the chamber (e.g., in the shared transfer space) can result in large temperature differences between the transfer space and the reaction space. Furthermore, due to the small diffusion space of conventional chambers, higher purge gas flow rates may be required to adequately purge the chamber.

[0018]

[0035] The present technology addresses these issues by providing a thermal choke plate that introduces purge gas into the chamber within the reaction space. This may help reduce the pressure delta between the reaction space and the transfer space, reducing the amount of purge gas required to purge the chamber. Introducing purge gas into the reaction space may also improve temperature uniformity during hot leveling of the pedestal. The height of the choke plate may also be increased, which may provide a longer and more uniform diffusion surface along the pedestal and help prevent faceplate sublimation. In embodiments, a multi-piece isolator may be utilized to help thermally isolate the grounded plate from the high temperature of the pedestal adjacent to the substrate support surface.

[0019]

[0036] While the remainder of the disclosure routinely identifies specific structures, such as four-position transfer regions, in which the present structures and methods may be employed, it will be readily understood that the present systems and methods are equally applicable to any number of structures and devices that may benefit from the described transfer capabilities. Accordingly, the present technology should not be considered limited to use with any particular structure. Furthermore, while an exemplary tool system is described to provide a foundation for the present technology, it should be understood that the present technology may be incorporated into any number of semiconductor processing chambers and tools that may benefit from some or all of the described processes and systems.

[0020]

[0037] While the remainder of the disclosure will routinely identify particular structures, such as a four-position transfer region, in which the present structures and methods may be employed, it will be readily understood that the faceplates or components discussed may similarly be employed in any number of other systems or chambers, as well as any other apparatus in which multiple components may be joined or coupled. Thus, the technology should not be considered limited to use with only any particular chamber. Furthermore, while an exemplary tool system will be described to provide a foundation for the technology, it should be understood that the technology can be incorporated into any number of semiconductor processing chambers and tools that can benefit from some or all of the processes and systems described.

[0021]

[0038] FIG. 1A illustrates a top view of one embodiment of a deposition, etch, bake, and cure chamber substrate processing tool or processing system 100 in accordance with some embodiments of the present technology. In the figure, a set of front-opening unified pods 102 supplies substrates of various sizes, which are received by robot arms 104a and 104b in a factory interface 103, placed in a load lock or low-pressure holding area 106, and then delivered to one of the substrate processing regions 108 located in a chamber system or quad sections 109a-c (which may be substrate processing systems each having a transfer region in fluid communication with multiple processing regions 108). While a quad system is shown, it should be understood that standalone chambers, twin chambers, and other platforms incorporating multiple chamber systems are equally encompassed by the present technology. A second robot arm 110 housed in a transfer chamber 112 may be used to transfer substrate wafers from the holding area 106 to the quad section 109. The second robotic arm 110 may also be housed within a quad section or transfer chamber to which each of the processing systems may be connected. Each substrate processing region 108 may be equipped to perform several substrate processing steps, including cyclic layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, as well as any number of deposition processes, including etching, pre-cleaning, annealing, plasma treatment, degassing, alignment, and other substrate processes.

[0022]

[0039] Each quad section 109 may include a transfer region that receives substrates from and supplies substrates to the second robot arm 110. The transfer region of the chamber system may be aligned with the transfer chamber having the second robot arm 110. In some embodiments, the transfer region may be laterally accessible to the robot. In a subsequent step, components of the transfer section may vertically move the substrate into the processing region 108 thereon. Similarly, the transfer region may also be operable to rotate the substrate between positions within each transfer region. The substrate processing region 108 may include any number of system components for depositing, annealing, curing, and / or etching a material film on a substrate or wafer. In one configuration, two sets of processing regions, such as the processing regions in quad sections 109a and 109b, may be used to deposit material on the substrate. A third set of processing chambers, such as the processing chambers or region in quad section 109c, may be used to cure, anneal, or process the deposited film. In another configuration, all three chamber sets, such as all 12 chambers shown, can be configured to both deposit and / or cure a film on a substrate.

[0023]

[0040] As shown in this figure, the second robot arm 110 may include two arms for simultaneously supplying and / or retrieving multiple substrates. For example, each quad section 109 may include two accesses 107 along a surface of the transfer region housing. The two accesses 107 may be laterally aligned with the second robot arm. The accesses may be defined along a surface adjacent to the transfer chamber 112. In some embodiments, as shown, a first access may be aligned with a first substrate support of the quad section's plurality of substrate supports. Additionally, a second access may be aligned with a second substrate support of the quad section's plurality of substrate supports. The first substrate support may be adjacent to the second substrate support. The two substrate supports may define a first row of substrate supports in some embodiments. As shown in the illustrated configuration, the second row of substrate supports may be positioned laterally outward from the transfer chamber 112 and behind the first row of substrate supports. The two arms of the second robot arm 110 may be spaced apart so that the two arms can simultaneously enter a quad section or chamber system to deliver or retrieve one or two substrates to or from a substrate support in the transfer region.

[0024]

[0041] Additional chambers may be incorporated into any one or more of the transfer regions described, separate from the fabrication system depicted in various embodiments. It will be recognized that additional configurations of deposition, etching, annealing, and curing chambers for material films are contemplated by the processing system 100. Additionally, any number of other processing systems may be utilized with the present technology that may incorporate transfer systems for performing any of the specific processes, such as substrate movement. In some embodiments, a processing system that may provide access to multiple processing chamber regions while maintaining a vacuum environment in various sections, such as the holding and transfer regions mentioned, may enable processes to be performed in multiple chambers while maintaining a specific vacuum environment between separate processes.

[0025] FIG. 1B shows a schematic cross-sectional elevation view of one embodiment of an exemplary processing tool, e.g., through a chamber system, according to some embodiments of the present technique. FIG. 1B may show a cross-sectional view through any two adjacent processing regions 108 in any quad section 109. The elevation view may show the configuration or fluid communication of one or more processing regions 108 with the transfer region 120. For example, a continuous transfer region 120 may be defined by a transfer region housing 125. The housing may define an open interior space in which several substrate supports 130 may be disposed. For example, as shown in FIG. 1A, the exemplary processing system may include multiple substrate supports 130 distributed around the transfer region and within the housing, including four or more substrate supports 130. The substrate support may be a pedestal as shown, although several other configurations may be used. In some embodiments, the pedestal may be vertically movable between the transfer region 120 and a processing region above the transfer region. The substrate support may be vertically movable along a central axis of the substrate support along a path between a first position and a second position within the chamber system. Correspondingly, in some embodiments, each substrate support 130 may be axially aligned with an overlying processing region 108 defined by one or more chamber components.

[0026]

[0043] The open transfer region may allow a transfer device 135, such as a carousel, to engage and move (e.g., rotate) substrates between various substrate supports. The transfer device 135 may be rotatable about a central axis, which may allow a substrate to be positioned for processing in any of the processing regions 108 in the processing system. The transfer device 135 may include one or more end effectors that may engage the substrate from above, below, or the outer edge of the substrate for movement around the substrate supports. The transfer device may receive a substrate from a transfer chamber robot, such as robot 110 described above. The transfer device may then rotate the substrate to alternate substrate supports to facilitate the delivery of additional substrates.

[0027]

[0044] Once positioned and ready for processing, the transfer apparatus can position an end effector or arm between the substrate supports. This can allow the substrate supports to rise above the transfer apparatus 135 to supply a substrate into the processing region 108 (which can be vertically offset from the transfer region). For example, as shown, substrate support 130a can supply a substrate into processing region 108a, while substrate support 130b can supply a substrate into processing region 108b. This can also be done with the other two substrate supports and processing regions. Furthermore, in embodiments where additional processing regions are included, additional substrate supports and processing regions can also be done. In this configuration, when the substrate supports are operably engaged to process a substrate, for example in the second position, they can at least partially define the processing region 108 from below. This processing region can be axially aligned with the associated substrate support. The processing region can be defined from above by a face plate 140 and other lid stack components. In some embodiments, each processing region may have an individual lid stack component, while in some embodiments, a component may house multiple processing regions 108. Based on this configuration, in some embodiments, each processing region 108 may be fluidly isolated from above from each other processing region within the chamber system or quad section, while still being in fluid communication with the transfer region.

[0028]

[0045] In some embodiments, the face plate 140 can act as a system electrode for generating a localized plasma within the processing region 108. As shown, each processing region can utilize or incorporate a separate face plate. For example, face plate 140a can be included to define processing region 108a from above. Face plate 140b can also be included to define processing region 108b from above. In some embodiments, the substrate support can act as a companion electrode for generating a capacitively coupled plasma between the face plate and the substrate support. In some embodiments, the face plate can be heated by a heater 142 that extends around the face plate. Depending on the spatial geometry, a pumping liner 145 can at least partially define the processing region 108 radially or laterally. Again, separate pumping liners can be utilized for each processing region. For example, pumping liner 145a can at least partially define processing region 108a radially. Additionally, pumping liner 145b may at least partially radially define processing region 108b. Pumping liner 145 may be mounted to choke plate 147, which may control heat distribution from the lid stack to the cooled chamber body. In embodiments, a shield plate 150 may be positioned between lid 155 and face plate 140. Again, separate shield plates may be included to facilitate fluid distribution within each processing region. For example, shield plate 150a may be included for distribution toward processing region 108a, and shield plate 150b may be included for distribution toward processing region 108b.

[0029]

[0046] The lid 155 may be a separate component for each processing region or may include one or more common features. In some embodiments, the lid 155 may be one of two separate lid plates in the system. For example, a first lid plate 158 may be installed above the transfer region housing 125. The transfer region housing may define an open space. The first lid plate 158 includes several apertures therethrough, dividing the overlying space into specific processing regions. In some embodiments, such as the one shown, the lid 155 may be a second lid plate and a single component defining multiple apertures 160 for fluid supply to individual processing regions. For example, the lid 155 may define a first aperture 160a for fluid supply to processing region 108a. Additionally, the lid 155 may define a second aperture 160b for fluid supply to processing region 108b. If included, additional apertures may be defined for additional processing regions within each section. In some embodiments, each quad section 109, or a multi-processing region section that may accommodate more or less than four substrates, may include one or more remote plasma units 165 for supplying plasma effluents into the processing chambers. In some embodiments, a separate plasma unit may be incorporated into each chamber processing region, while in some embodiments, fewer remote plasma units may be used. For example, as shown, a single remote plasma unit 165 may be used for multiple chambers, e.g., two, three, four, or more chambers (up to all the chambers for a particular quad section). In embodiments of the present technology, piping may extend from the remote plasma unit 165 to each aperture 160 to supply plasma effluents for processing or cleaning.

[0030]

[0047] In some embodiments, a purge channel 170 may extend through the transfer region housing near or adjacent each substrate support 130. For example, multiple purge channels may extend through the transfer region housing to provide fluid access for supplying fluidly coupled purge gas into the transfer region. The number of purge channels may be the same as or different from, or greater than or less than, the number of substrate supports in the processing system. For example, a purge channel 170 may extend through the transfer region housing beneath each substrate support. In the illustrated two substrate supports 130, a first purge channel 170a may extend through the housing adjacent substrate support 130a, and a second purge channel 170b may extend through the housing adjacent substrate support 130b. It should be understood that any additional substrate supports may similarly have plumbed purge channels extending through the transfer region housing to supply purge gas into the transfer region.

[0031]

[0048] Once purge gas is delivered through one or more of the purge channels, it may also be exhausted through the pumping liner 145. This pumping liner 145 may provide a complete exhaust path from the processing system. Thus, in some embodiments, both the process precursor and the purge gas may be exhausted through the pumping liner. The purge gas may flow upward into the associated pumping liner. For example, after flowing through purge channel 170b, the purge gas may be exhausted from the processing system via pumping liner 145b.

[0032]

[0049] As previously mentioned, processing system 100, and more specifically, a quad section or chamber system incorporated into processing system 100 or other processing systems, may include a transfer section positioned below the illustrated processing chamber region. FIG. 2 is a schematic isometric view of the transfer section of an exemplary chamber system 200 in accordance with some embodiments of the present technique. FIG. 2 illustrates additional aspects or variations of the transfer region 120 described above, which may include any of the components or features described above. The illustrated system may include a transfer region housing 205 defining a transfer region in which several components may be included. The transfer region may further be at least partially defined from above by a processing chamber or processing region (e.g., processing chamber region 108 illustrated in quad section 109 of FIG. 1A) in fluid communication with the transfer region. Sidewalls of the transfer region housing may define one or more access locations 207 where substrates may be delivered and retrieved, such as by the second robot arm 110 described above. The access locations 207 may be slit valves or other sealable access locations, and in some embodiments include doors or other sealing mechanisms to provide an airtight environment within the transfer region housing 205. While two such access locations 207 are shown, it should be understood that in some embodiments only a single access location 207 may be included, or access locations on multiple sides of the transfer region housing may be included. It should also be understood that the illustrated transfer section may be sized to accommodate any substrate size, including 200 mm, 300 mm, 450 mm, or larger or smaller substrates (including substrates featuring any number of geometries or shapes).

[0033]

[0050] Within the transfer region housing 205, there may be multiple substrate supports 210 positioned around the transfer region space. While four substrate supports are shown, it should be understood that any number of substrate supports is similarly encompassed by embodiments of the present technology. For example, three, four, five, six, eight, or more substrate supports 210 may be housed within the transfer region according to embodiments of the present technology. The second robot arm 110 may supply substrates to either or both of the substrate supports 210a or 210b through the access portion 207. Similarly, the second robot arm 110 may retrieve substrates from these locations. Lift pins 212 may protrude from the substrate support 210 to allow the robot access underneath the substrate. The lift pins may be fixed on the substrate support or may be fixed where the substrate support can be recessed downward. In some embodiments, the lift pins may also be raised and lowered through the substrate support. The substrate support 210 may be vertically movable and, in some embodiments, may extend to a processing chamber region of the substrate processing system, such as processing chamber region 108 positioned above the transfer region housing 205 .

[0034]

[0051] The transfer region housing 205 may provide access 215 for an alignment system, which may include an aligner. The aligner may extend through an aperture in the illustrated transfer region housing and may operate in conjunction with a laser, camera, or other monitoring device projecting or transmitting through an adjacent aperture to determine whether a moving substrate is properly aligned. The transfer region housing 205 may also include a transfer apparatus 220, which may operate in several ways to position and move substrates between various substrate supports. In one example, the transfer apparatus 220 may move substrates on substrate supports 210a and 210b to substrate supports 210c and 210d, thereby providing additional substrates within the transfer chamber. Additional transfer steps may include rotating the substrate between the substrate supports for additional processing in the overlying processing region.

[0035]

[0052] The transfer apparatus 220 may include a central hub 225. The central hub 225 may include one or more shafts extending into the transfer chamber. An end effector 235 may be coupled to the shaft. The end effector 235 may include multiple arms 237 extending radially or laterally outward from the central hub. While a central body from which the arms extend is shown, in various embodiments, the end effector may further include separate arms, each coupled to a shaft or central hub. Embodiments of the present technology may include any number of arms. In some embodiments, the number of arms 237 may be similar to or equal to the number of substrate supports 210 included in the chamber. Thus, as shown, for four substrate supports, the transfer apparatus 220 may include four arms extending from the end effector. The arms may feature any number of shapes and profiles, such as linear or arcuate profiles, and may further include any number of distal profiles including hooks, rings, forks, or other designs for supporting and / or providing access to the substrate, e.g., for alignment or engagement purposes.

[0036]

[0053] The end effector 235, or components or portions of the end effector, may be used to contact the substrate during transfer or movement. These components and end effectors may be made from or include several materials, including conductive and / or insulating materials. In some embodiments, the materials may be coated or plated to withstand contact with precursors or other chemicals that may pass into the transfer chamber from the processing chambers above.

[0037]

[0054] Additionally, materials may be provided or selected to withstand other environmental characteristics, such as temperature. In some embodiments, the substrate support may be operable to heat a substrate disposed thereon. The substrate support may be configured to elevate the surface or substrate temperature to temperatures of about 100°C or higher, about 200°C or higher, about 300°C or higher, about 400°C or higher, about 500°C or higher, about 600°C or higher, about 700°C or higher, about 800°C or higher, or higher. Any of these temperatures may be maintained during operation. Thus, components of the transfer apparatus 220 may be exposed to any of the above or included temperatures. Consequently, in some embodiments, any of the materials may be selected to accommodate these temperature regimes and may include materials such as ceramics or metals, which may be characterized by relatively low coefficients of thermal expansion or other beneficial properties.

[0038]

[0055] The component bond may also be adapted for operation in high temperature and / or corrosive environments. For example, if the end effector and end portion are each ceramic, the bond may include a press fit, snap fitting, or other fitment that may not include additional materials, such as bolts, which may expand and contract with temperature and cause the ceramic to crack. In some embodiments, the end portion may be continuous with or integrally formed with the end effector. Any number of other materials that can promote process and resistance during operation may be utilized and are also encompassed by the present technology.

[0039]

[0056] FIG. 3 illustrates a cross-sectional view of an exemplary substrate processing system 300 in accordance with some embodiments of the present technique. FIG. 3 may show additional details regarding components within system 100, such as choke plate 147. It is understood that system 300, in some embodiments, may include any feature or aspect of system 100 described above. System 300 may be used to perform semiconductor processing operations, including deposition of hard mask materials as described above, as well as other deposition, removal, and cleaning operations. In particular, substrate processing system 300 may include a transfer region housing (or chamber body) 330, an outer isolator 510, a top (or first) isolator 520, a bottom (or second) isolator 530, a pedestal 310, a choke plate 400, a lower lid plate 350, an upper lid plate 360, a face plate 340, a pumping liner 370, a ground plate 380, and / or a bellows 600 (among other components). The chamber body 330 may define a transfer region (or chamber volume) 331 therein for housing various components of the substrate processing system 300 during use. In particular, the chamber body 330 may house the pedestal 310, the ground plate 380, and the isolators 510, 520, and 530 as they are vertically moved into the processing region, as described further below.

[0040]

[0057] A pedestal or substrate support 310 may be disposed within the chamber body 330. The substrate support 310 may be vertically movable within the chamber body 330 between a transfer region and a processing region. The substrate support 310 may include a support plate, which may include a heater, an isolator, and / or a ground plate 380. The substrate support 310 may also include a shaft that may extend through the bottom of the chamber body 330. The substrate support 310 is movable within the chamber body 330 between a lower transfer region (shown in FIG. 3 ) and an upper processing region. During a processing step, the substrate support 310 moves upward within the chamber body 330 to a process position within the processing region. Once a deposition and / or other processing step is completed, the substrate support 310 may be lowered to a transfer position within the transfer region. The processed substrate may be removed from the substrate support 310, and a new substrate may be positioned on top of the substrate support 310.

[0041]

[0058] The stack of components installed in the chamber body 330 may define a processing region 301 above the chamber volume 331. For example, the upper boundary of the processing region 301 may be defined by the bottom surface of the face plate 340, the lower boundary of the processing region 301 may be defined by the pedestal 310, and the lateral boundaries of the processing region 301 may be defined by the inner surfaces of the lower lid plate 350, the upper lid plate 360, the pumping liner 370, and / or the choke plate 400. The lower lid plate 350 may be installed (directly or indirectly) above the chamber body 330.

[0042]

[0059] The choke plate 400 may be mounted on an upper surface of the lower lid plate 350. The choke plate 400 may be mounted on the lower lid plate 350 at a first surface of the choke plate 400. The choke plate 400 may define a first aperture axially aligned with the processing chamber and the pedestal 310. The choke plate 400 may also define a second aperture axially aligned with an exhaust lumen formed in the chamber body 330 and / or the pumping liner 370. The second aperture may form part of an exhaust channel for exhausting gases from the processing region 301. As shown, the choke plate 400 may include a rim 410 that defines the first aperture through the choke plate 400. The rim 410 may extend along a sidewall of the lower lid plate 350. In some embodiments, a gap may be maintained between the rim 410 and the lid plate to control heat flow between components. The rim 410 may extend perpendicularly from a first surface of the choke plate 400 toward the lower lid plate 350, forming a protrusion from the choke plate 400. The choke plate 400 may also include a flange 420 extending laterally outward from the rim 410. For example, the flange 420 may extend outward from an outer surface of the rim 410 and, in some embodiments, may be located on the lower lid plate 350. In certain embodiments, the flange 420 and the rim 410 may share a single first surface such that the flange 420 is located at the upper end of the choke plate 400, although other locations of the flange 420 relative to the rim 410 are possible. The rim 410 may include a distal end 401. The distal end 401 may be the lowermost end of the choke plate 400. Thus, when the choke plate 400 is assembled within the substrate processing system 300, the end 401 is the portion of the choke plate 400 that extends furthest into the chamber volume 331.

[0043]

[0060] The upper lid plate 360 ​​and the pumping liner 370 may be disposed above the choke plate 400 (e.g., above a first surface of the choke plate 400). The upper lid plate 360 ​​may have an upper edge that is shorter than an upper edge of the pumping liner 370 such that a vertical gap 361 exists between the upper lid plate 360 ​​and the pumping liner 370. The vertical gap 361 may allow one or more gases to be exhausted from the processing region 301 through one or more outlets 371 a, b defined in the surface of the pumping liner 370. Gases exhausted through the pumping liner 370 may pass through apertures defined by the choke plate 400 and the chamber body 630 radially outward of the processing region.

[0044]

[0061] The inner surface 417 of the upper lid plate 360 ​​and the inner surface of the choke plate 400 can be aligned flush with one another so that the inner surfaces define a substantially uniform diffusion surface. For example, the inner surfaces can have substantially the same circumference and be concentric with one another to define a smooth surface. This smooth surface allows the purge gas to flow along the surface without interference, resulting in a more uniform and consistent diffusion of the purge gas to the face plate 340. This improved uniformity and consistency can reduce the flow rate of purge gas required to purge the face plate 340 and prevent sublimation. Similarly, the outer surface 311 of the pedestal 310 and the outer surface of the outer isolator 511 can be aligned flush with one another so that the outer surfaces define a substantially smooth and uniform diffusion surface between the pedestal 310 and the chamber wall. For example, the outer surface 311 and the outer surface of the outer isolator 511 can have substantially the same circumference and be concentric with one another to define a smooth surface. This smooth surface achieves similar results to those described above for the uniform surface of the inner surface. Thus, the smooth surfaces of the inner and outer surfaces 311, 511 define a portion of the process purge flow path between them that is substantially free of interfering protrusions that would impede the flow of purge gas, which can flow evenly between these surfaces and deliver maximum flow rate toward faceplate 340.

[0045]

[0062] 4-8 illustrate a choke plate 400. As described above for the choke plate 147, the choke plate 400 can be used to control heat distribution to a chamber (e.g., the chamber body 330) within a substrate processing system. As shown, the choke plate 400 can be or include a thermally conductive plate defining a first aperture 424 therethrough and a second aperture 425 therethrough. The second aperture 425 can be laterally offset on the choke plate 400 from the first aperture 424. The geometry of the choke plate 400 can be configured to correspond to the structure of a lid plate (such as the lower lid plate 350) on which the choke plate 400 may be installed. In certain embodiments, the periphery of the choke plate 400 can be generally tear drop-shaped. For example, the periphery can include a small arc-shaped segment joined to a larger arc-shaped segment via two generally linear segments. The first aperture 424 may be coaxial with the larger arcuate segment, while the second aperture 425 may be coaxial with the smaller arcuate segment.

[0046]

[0063] The choke plate 400 may define a first set of protrusions 426 extending from a first surface 422 of the choke plate 400. The choke plate 400 may, in some embodiments, be mounted to the lid plate on protrusions 515. The first set of protrusions 426 may be distributed radially around the first aperture 424, as shown. For example, the protrusions 426 may be distributed in a generally symmetrical arrangement around the first aperture 424. The protrusions 426 may be spaced at regular (or substantially regular) intervals around the first aperture 424. As used herein, substantially constant spacing may be understood to mean that the angular spacing between any two adjacent protrusions may be within about 10 degrees of the average angular spacing between adjacent protrusions of the choke plate 400, within about 5 degrees of the average angular spacing, within about 4 degrees of the average angular spacing, within about 3 degrees of the average angular spacing, within about 2 degrees of the average angular spacing, within about 1 degree of the average angular spacing, or less.

[0047]

[0064] While eight protrusions 426 are illustrated, it should be understood that any number of protrusions 426 may be included in embodiments of the present technology. For example, the choke plate 400 may include at least about four protrusions 426, at least about five protrusions 426, at least about six protrusions 426, at least about seven protrusions 426, at least about eight protrusions 426, at least about nine protrusions 426, at least about ten protrusions 426, at least about twelve protrusions 426, at least about fourteen protrusions 426, or more. Each protrusion 426 may protrude outward from the first surface of the choke plate 400 by between about 0.05 mm and about 0.50 mm, between about 0.10 mm and about 0.40 mm, between about 0.15 mm and about 0.30 mm, or about 0.20 mm. The protrusions 426 may be arc-shaped segments. However, the length of each protrusion 426 may be small enough that each protrusion 426 may be approximately rectangular in shape. Each protrusion 426 may have a length or average length (e.g., the average length of the inner and outer edges of each protrusion 426) of between about 5 mm and 50 mm, between about 10 mm and 40 mm, between about 15 mm and 30 mm, or about 20 mm. The width of each protrusion 426 (e.g., the distance between the inner and outer edges of each protrusion 426) may be between about 1 mm and 10 mm, between about 2 mm and 9 mm, between about 3 mm and 8 mm, or between about 4 mm and 7 mm. Typically, each of the protrusions 426 has the same set of dimensions, although some embodiments may incorporate one or more protrusions 426 having different dimensions.

[0048]

[0065] The choke plate 400 may define several protrusions 427 extending from the first surface of the choke plate 400 (e.g., along the flange 420). Here, the protrusions 427 are distributed radially around the second aperture 425, as shown. For example, the protrusions 427 may be distributed in a generally symmetrical arrangement about the second aperture 425. The protrusions 427 may be spaced at regular (or substantially regular) intervals relative to the second aperture 425. While three protrusions 427 are shown, it should be understood that any number of protrusions 427 may be included in embodiments of the present technology. For example, the choke plate 400 may include at least approximately three protrusions 427, at least approximately four protrusions 427, at least approximately five protrusions 427, or more protrusions 427. Each protrusion 427 may protrude outward from the first surface of the choke plate 400 by approximately 0.05 mm to 0.50 mm, approximately 0.10 mm to 0.40 mm, approximately 0.15 mm to 0.30 mm, or approximately 0.20 mm. In many cases, protrusion 427 may protrude outward from the first surface the same or substantially the same distance (e.g., within about 10%, within about 5%, within about 3%, within about 1%) as protrusion 426. Protrusion 427 may be a segment of a circle. However, the length of each protrusion 427 may be small enough that each protrusion 427 may be approximately rectangular in shape. Each protrusion 427 may have a length or average length (e.g., the average length of the inner and outer edges of each protrusion 427) of approximately 5 mm to 30 mm, approximately 10 mm to 20 mm, or approximately 15 mm. The width of each protrusion 427 (e.g., the distance between the inner and outer edges of each protrusion 427) may be between about 1 mm and 8 mm, between about 1.5 mm and 6 mm, or between about 2 mm and 4 mm. Typically, each of the protrusions 427 has the same set of dimensions, although some embodiments may incorporate one or more protrusions 427 having different dimensions. The protrusions 426, 427 may help provide a minimum contact area that limits contact between the choke plate 400 and a component (e.g., the pumping liner 370) installed on the choke plate 400.

[0049]

[0066] Although not shown, the underside of the flange 420 may include a similar set of protrusions around each of the first and second apertures 424 and 425. In embodiments of the present technology, incorporating various protrusion arrangements around the first and second apertures 424 and 425 allows for more uniform deformation of the choke plate 400 when subjected to high vacuum loads. This uniform deformation ensures uniform heat transfer through the choke plate 400, potentially helping to improve faceplate temperature uniformity. Additionally, keeping the protrusions small minimizes contact between the choke plate 400 and the pumping liner 370 and lower lid plate 350, thereby limiting heat transfer through the choke plate 400 and helping to thermally isolate the pumping liner 370 and faceplate 340 from the cooler, unheated lower lid plate 350.

[0050]

[0067] In some embodiments, the choke plate 400 (and / or the rim 410) may have a thickness (or height) from a first surface (e.g., the upper surface 422 of the rim 410 and flange 420) to a second surface (e.g., the lower surface of the rim 410) of between about 70 mm and 100 mm, between about 75 mm and 95 mm, between about 80 mm and 90 mm, or about 85 mm. In some embodiments, the thickness of the flange 420 may be between about 10 mm and 25 mm, or between about 15 mm and 20 mm. Such dimensions may allow the lower surface of the rim 410 to protrude downwardly from the lower surface of the flange 420 by about 45 mm and 90 mm, between about 50 mm and 85 mm, between about 55 mm and 80 mm, between about 60 mm and 75 mm, or between about 65 mm and 70 mm. This distance helps increase the diffusion distance of the chamber and can help reduce the amount of purge gas that must be flowed into the chamber during processing steps to keep the chamber parts free of film residue.

[0051]

[0068] The flange 420 includes a top surface 422 and a bottom surface 423. The flange 420 may define a purge inlet 421 in the top surface 422 for receiving a purge gas. However, in other embodiments, the purge inlet may be defined through a circumferential edge of the flange 420 and / or along a bottom surface of the flange 420, as described further below. The rim 410 may define a plurality of purge outlets 411. The plurality of purge outlets 411 may be in fluid communication with the purge inlet 421 to supply a purge gas to the interior of the first aperture 424 (and the processing region 301). The purge outlets 411 may be positioned in one or more rows at one or more vertical positions on the rim 410. For example, some or all of the purge outlets 411 may be located within the top 25% of the rim 410, some or all of the purge outlets 411 may be located within the top central 25% of the rim 410, some or all of the purge outlets 411 may be located within the bottom central 25% of the rim 410, some or all of the purge outlets 411 may be located within the bottom 25% of the rim 410, or may be located at other locations around the rim 410.

[0052]

[0069] In one example, there may be 180 purge outlets to allow for even distribution of gas exiting the purge outlets. However, in other embodiments, there may be more or fewer than 180 purge outlets. For example, there may be at least about 40 purge outlets, at least about 60 purge outlets, at least about 80 purge outlets, at least about 100 purge outlets, at least about 120 purge outlets, at least about 140 purge outlets, at least about 160 purge outlets, at least about 180 purge outlets, at least about 200 purge outlets, at least about 220 purge outlets, at least about 240 purge outlets, or more. The purge outlets 411 may be formed at regular and / or irregular intervals around the inner surface of the rim 410. Each purge outlet 411 may have the same diameter, or some or all of the purge outlets 411 may have different diameters.

[0053]

[0070] 7-8 , the flange 420 may define a purge channel 428 therethrough that communicates with the purge inlet 421 and extends from the purge inlet 421 toward the rim 410 to form a portion of a purge flow path. The purge channel 428 may be in fluid communication with an upper (or first) plenum 416, which in some embodiments may extend around the entire circumference of the rim 410. For example, the first plenum 416 may be generally annular in shape. In other embodiments, the first plenum 416 may be generally C-shaped or arc-shaped and extend around only a portion of the circumference of the first apertures 424. Gas flowing through the purge inlet 421 and the purge channel 428 may enter the first plenum 416 and be distributed around all or a substantial portion of the circumference of the first apertures 424. The rim 410 may define a bottom (or second) plenum 412 located below the first plenum 416. The second plenum 412 may extend around the entire or substantially the entire circumference of the rim 410. The second plenum 412 may be aligned with and in fluid communication with each of the purge outlets 411 to supply purge gas to the interior of the first apertures 424.

[0054]

[0071] The rim 410 may define one or more baffles 413 extending between and fluidly communicating the first plenum 416 and the second plenum 412. This may allow purge gas flowing through the first plenum 416 to enter the second plenum 412 at one or more locations around the outer periphery of the first apertures 424. Although only one baffle 413 is depicted in FIG. 8 , the choke plate 400 may define any number of baffles (not shown) at different radial locations around the first apertures 424 to distribute purge gas at least substantially around the outer circumference of the second plenum 412. There may be any number of baffles 413 in the choke plate 400. For example, the choke plate 400 may include one or more baffles, two or more baffles, three or more baffles, four or more baffles, five or more baffles, six or more baffles, eight or more baffles, ten or more baffles, or more baffles. Each of the baffles 413 may have the same or different diameters and / or the same or different cross-sectional areas. For example, some or all of the baffles 413 may have different diameters and / or cross-sectional areas to account for the proximity of the baffles to the purge inlet 421. In particular, one or more baffles closer to the purge inlet 421 may have a smaller diameter and / or cross-sectional area to account for purge gas filling the portion of the upper plenum 416 closer to the purge inlet 421 more quickly than the portion of the upper plenum 416 further from the purge inlet 421. This difference in diameter and / or cross-sectional area allows purge gas to fill the upper plenum 416 and pass substantially uniformly through the baffles 413 to the bottom plenum 412. This configuration allows purge gas to exit the choke plate 400 uniformly, providing a uniform gas distribution to the substrate processing system. The diameter of the baffle 413 can often be between about 3 mm and 15 mm, between about 4 mm and 13 mm, between about 5 mm and 11 mm, or between about 6 mm and 10 mm, although other diameters are possible in various embodiments.

[0055]

[0072] In one example, there may be a total of four baffles 413, with the two baffles 413 closest to the purge inlet 421 having a circumferential width of 6 mm and the two baffles 413 furthest from the purge inlet having a circumferential width of 10 mm. However, in other examples, there may be any number of baffles 413. Furthermore, each of the baffles 413 may have any diameter and / or cross-sectional area to uniformly distribute gas in the second plenum 412. In one alternative, there may be a single baffle 413 (such as an annular or arc-shaped baffle) extending between the plenums, with the single baffle having a cross-sectional area along its circumference (e.g., narrower widths closer to the purge inlet 421 and wider widths further from the purge inlet 421) to account for the location of the purge inlet 421. In a further alternative, there may be one or more baffles 413 having substantially equal widths, and the rim 410 defines the top plenum 416 to have different spacing along its circumference to account for the location of the purge inlet 421 (e.g., more spacing for portions of the top plenum 416 closer to the purge inlet 421 and less spacing for portions of the top plenum 416 farther from the purge inlet 421). In yet another alternative, one or more baffles 413 may have substantially equal widths, and the first plenums may have substantially equal spacing along their circumference, and the rim 410 defines the bottom plenum 412 to have different spacing along its circumference to account for the location of the purge inlet 421 (e.g., more spacing for portions of the bottom plenum 412 closer to the purge inlet 421 and less spacing for portions of the bottom plenum 412 farther from the purge inlet 421).

[0056]

[0073] In some embodiments, the choke plate 400 may further include a closure plate 430 secured to the rim 410 through any means known in the art (e.g., welding, etc.). The closure plate 430, once machined and / or otherwise formed into the surface of the rim 410, may be used to seal the plenum and / or baffle.

[0057]

[0074] In some embodiments, a portion of the rim 410 may define a measurement hole 415 therethrough. The measurement hole 415 may be used to measure the pressure level at the inner radius of the choke plate 400. The measurement hole 415 may be located between the first plenum 416 and the second plenum 412 in some embodiments.

[0058]

[0075] The choke plate 400 may address the problems associated with faceplate sublimation faced by conventional substrate processing systems. In conventional substrate processing system designs, purge gas is exhausted from the bottom of the chamber body to clean the processing region. However, in conventional designs, when purge gas is supplied from the bottom of the chamber body, the flow rate required to purge the processing region is too high.

[0059]

[0076] Choke plate 400 solves this problem by introducing purge gas closer to pedestal 310 and faceplate 340, thereby reducing the flow rate of purge gas required to purge the processing region as it exits through purge outlet 411. This reduced distance therefore allows faceplate 340 to be adequately purged with less purge gas and prevent sublimation across its entire surface at a lower purge flow rate than previously required.

[0060]

[0077] Furthermore, if the purge gas is supplied from below, it may blow contaminants formed within the chamber body into the processing region 301. Relocating the purge gas from the bottom of the chamber body to the choke plate 400 reduces the risk of such contamination by bringing the purge outlet 411 much closer to the processing region 301. Furthermore, by moving the purge gas inlet above the reactor space of the chamber, the pressure difference between the reactor space and the shared transfer space in a multi-chamber system can be reduced. Temperature uniformity during hot leveling of the pedestal 310 may also be improved.

[0061]

[0078] Although the choke plate 400 is depicted as having a purge inlet 421 defined along the top surface 422 of the flange 420, the purge gas source for the substrate processing system may more preferably be located below the system, so it may be beneficial to have the purge gas enter the choke plate 400 from the bottom. FIG. 9 illustrates an alternative embodiment of a choke plate in which the purge inlet may be defined along the bottom surface of the lid portion of the choke plate. For example, FIG. 9 illustrates a partial view of an embodiment of a substrate processing system 300' that is similar to the substrate processing system 300, except as noted below. In this embodiment, features having similar reference numbers to features described above are similar except as noted below. The flange 420' of the choke plate 400' may define a purge inlet 421' along the bottom surface 423' of the choke plate 400'. As such, the purge gas may enter the choke plate 400' from below. The chamber body 330' may define a chamber purge channel 332' extending therethrough to allow a source of purge gas to enter the chamber body 330' from below. The lower lid plate 350' defines a lid purge channel 351' extending therethrough for the passage of purge gas.

[0062]

[0079] In the assembled configuration, the chamber purge channel 332′, the lid purge channel 351′, and the purge inlet 421′ can all be aligned and in communication with one another such that purge gas can flow through each of these features. For example, purge gas can enter the chamber purge channel 332′ from the chamber body 330′ along direction A. The purge gas can pass through the chamber purge channel 332′, enter the choke plate 400′ through the purge inlet 421′, and finally pass through the choke plate 400′.

[0063]

[0080] 10-11 show a partially assembled substrate processing system, in which isolators 510, 520, 530, ground plate 380, bellows 600, RF gasket 700, and spring mechanism 800 are assembled together. Assembly of bellows 600, RF gasket 700, and spring mechanism 800 is described further below. Isolators 520, 530 may be substantially cylindrical disks. Upper isolator 520 may have a top surface 521 and a bottom surface 523. Bottom isolator may have a top surface 531 and a bottom surface 533. Upper isolator 520 may define one or more ledges along an outer edge thereof for receiving one or more components of the substrate processing system. For example, upper isolator 520 may define a ledge 524 that can receive a portion of a component (e.g., a portion of outer isolator 510, as described further below) to rest on and couple to upper isolator 520. Although not shown, there may be multiple ledges defined around the periphery of upper isolator 520 to allow multiple portions of a component (or components) to rest on and couple to the upper isolator.

[0064]

[0081] The top isolator 520 may be mounted on the bottom isolator 510, and an outer isolator may be mounted surrounding the isolators 520, 530. Having multiple isolators allows for separation between the isolators 520 and 530 to further reduce heat transfer between heated components on the top surface 521 of the top isolator 520 (e.g., pedestal 310) and components below the bottom isolator 530 (e.g., ground plate 380).

[0065]

[0082] The isolators 520, 530 may define recesses extending outward from one or more of their respective top and bottom surfaces 521, 523, 531, and 533. For example, with specific reference to FIG. 10 , the top isolator 520 may define a recess 522 extending outward from the top surface 521. The top isolator 520 may further define a recess extending outward from the bottom surface 523. And, the bottom isolator 530 may further define a recess extending outward from the bottom surface 533. The recesses 522 may be arranged in various patterns, such as several annular rings, radial lines, and / or other symmetrical or asymmetrical patterns. In various embodiments, any number of recesses 522 may be used. For example, a surface may have 25 or more recesses, 50 or more recesses, 100 or more recesses, 150 or more recesses, 200 or more recesses, 250 or more recesses, 300 or more recesses, 350 or more recesses, 400 or more recesses, 450 or more recesses, 500 or more recesses, or more recesses. These recesses may serve as minimum contact areas to reduce heat transfer from heated components of the substrate processing system (e.g., the pedestal 310) and components below the bottom isolator 530 (e.g., the ground plate 380). In alternative embodiments, there may be recesses extending from all of the top and bottom surfaces of both isolators. Alternatively, there may be fewer than three sets of recesses extending from one of the top and bottom surfaces of the isolator.

[0066]

[0083] The recesses may have a height to optimally reduce heat transfer from the heated components to the rest of the substrate processing system (e.g., the ground plate 380) while still providing structural support to the heated components. For example, the recesses 522 may have a height of 0.13 mm. The recesses extending from the bottom surface 523 may have a height of 0.5 mm. The recesses extending from the bottom surface 533 may have a height of 0.5 mm. However, in other embodiments, the heights of the recesses may vary. For example, the recesses may have heights ranging between about 0.05 mm and 0.70 mm, between about 0.10 mm and 0.65 mm, between about 0.15 mm and 0.60 mm, between about 0.2 mm and 0.55 mm, or between about 0.25 mm and 0.5 mm. Furthermore, the recesses may have any combination of relative heights to optimize heat transfer reduction. For example, the recesses may all have the same height. Alternatively, the recesses may all have different heights.

[0067]

[0084] The outer isolator 510 may circumferentially surround the isolators 520, 530 as well as other components within the substrate processing system, such as the ground plate 380. The outer isolator may include one or more flanges that can be mounted on another component within the substrate processing system (e.g., on the ledge 524 of the upper isolator 520) to couple the outer isolator 510 to that component. For example, the outer isolator 510 may have a flange 512 that can rest on that component. The outer isolator 510 may have additional flanges (e.g., three flanges) to couple the outer isolator 510 to the component. In other embodiments, there may be more or fewer than three flanges. The underside of the flange 512 may include one or more minimum contact features, such as a recess, an annular protrusion, or the like, that can reduce the contact area between the flange 512 and the outer isolator.

[0068]

[0085] The isolators 510, 520, 530 may be made of a material that minimizes heat transfer. For example, one or more of the isolators 510, 520, 530 may be made of ceramic. In one embodiment, the isolators 510, 520, 530 may all be made of ceramic. The ceramic material may further reduce heat transfer between components above the isolators 510, 520, 530 and components below the isolators 510, 520, 530. In other embodiments, the isolators may be made of materials other than ceramic that provide the same or better heat transfer reduction as ceramic.

[0069]

[0086] The isolators 510, 520, and 530 address concerns about substrate contamination from contaminants from the substrate processing system. For example, the grounded plate 380 can be stainless steel with an aluminum coating. The aluminum coating can be provided to minimize the risk of stainless steel oxidation and contaminant formation, which can be exacerbated by high temperatures (e.g., heat generated by the pedestal 310 above the grounded plate 380 during substrate processing). However, the aluminum coating can be rated for a lower temperature than that used in processing substrates. This can lead to the risk of the aluminum coating peeling off, exposing the stainless steel material and oxidizing the grounded plate 380, generating contaminants that can contaminate the substrate. The use of multiple isolators and minimal contact features can help reduce the amount of heat transfer to the grounded plate and better isolate it from the high temperatures of the pedestal.

[0070]

[0087] The isolators 510, 520, and 530 help minimize this risk of oxidation. In particular, the isolators 520 and 530 reduce heat transfer from components above them (e.g., a heated pedestal) through the gaps defined therethrough, the spacing between the isolators 520 and 530, and the material of the isolators 510, 520, and 530. Additionally, the outer isolator 530 acts as a shield for the ground plate 380 by reducing heat transfer to the sides of the ground plate 380. Thus, the isolators 510, 520, and 530, individually or in combination, can minimize the risk of contamination to the substrate by sufficiently reducing heat transfer to the ground plate 380 to prevent the aluminum coating from peeling off and exposing the stainless steel.

[0071]

[0088] 12-13 show bellows 600. Bellows 600 may include a cap plate 610, a bellows plate 620, and / or a bellows body 630. Cap plate 610 may be mounted on a top (or first) end 631 of bellows body 630, and a bottom (or second) end 632 of bellows body 630 may be mounted on bellows plate 620. Ends 631, 632 of bellows body 630 may be secured to cap plate 610 and bellows plate 620, respectively, such as by welding, soldering, screwing, or other fastening means.

[0072]

[0089] The cap plate 610 may be shaped to couple one or more components of the substrate processing system (e.g., the outer isolator 510 and the ground plate 380) to the bellows 600. In particular, the cap plate 610 may include a cap base 618 and a cap extension 613 extending perpendicularly from the cap base 618. While the cap extension 613 is depicted as extending from a central circumferential edge of the cap base 618, in other embodiments, the cap extension may extend from other locations along the cap base, such as from the inner circumferential edge of the cap base. The cap extension 613 and the cap base 618 may be integrally formed. However, in other embodiments, the cap extension 613 and the cap base 618 may be separate components that are joined together.

[0073]

[0090] The cap extension 613 and the cap base 618 may define an inner (or first) notch 614 and an outer (or second) notch 615 therebetween. The notches 614, 615 may be sized to receive a portion of another component of a substrate processing system. For example, when the bellows 600 is assembled within the substrate processing system 300, the outer notch 615 may receive the end of the outer isolator 510. However, in other embodiments, the cap plate may not include one or both of the notches. For example, the inner peripheral edge of the cap plate may not include the inner notch and / or the outer notch, in which case no component coupled to the circumferential edge of the cap plate is required.

[0074]

[0091] The cap extension 613 defines a cap channel 617. The cap channel 617 may be sized to receive a portion of another component of the substrate processing system (e.g., a portion of the ground plate 380). However, in other embodiments, there may be no cap channel where the component may have other means of coupling with the bellows. The cap extension 613 may further include multiple cap protrusions 611 that extend toward the interior space of the bellows 600. There may be any number of cap protrusions (e.g., three, four, five, six, or any number desirable for securing the bellows to another component of the substrate processing system).

[0075]

[0092] The cap protrusions 611 may each define a cap aperture 612. The cap apertures 612 may be sized and shaped to receive a fastening member (e.g., a screw). In this manner, when the cap extension 613 is assembled within the substrate processing system 300, the bellows 600 may be secured to the ground plate 380 through the cap channel 617 that receives a portion of the ground plate 380, the bottom surface of the ground plate 380 that rests on top of the cap protrusions 611, and a fastening member (such as a screw) received through the portion of the ground plate 380 and the cap aperture 612.

[0076]

[0093] Bellows body 630 may be made of a flexible material, such as a flexible metal sheet, allowing the length of bellows body 630 to be compressed and extended. In this manner, the distance between cap plate 610 and bellows plate 620 may be varied based on the compression and extension of bellows body 630. In particular, the length of bellows body 630 may be determined based on the desired distance for moving a substrate within the processing region, as described further below. In one embodiment, bellows body 630 may have a compressed length of 40 mm and an extended length of 75 mm. However, in other embodiments, the bellows body may have a compressed length between 10 mm and 90 mm and an extended length between 40 mm and 120 mm.

[0077]

[0094] Plate 620 may include a bellows base 625 and a bellows extension 621 extending outwardly from bellows base 625. Bellows extension 621 may extend outwardly beyond the outer diameter of bellows body 630. Bellows base 625 and bellows extension 621 may be integrally formed. However, in other embodiments, bellows base 625 and bellows extension 621 may be separate components joined together. Bellows base 625 includes a number of bellows protrusions 623 that extend toward the interior space of bellow 600. There may be any number of bellows protrusions (e.g., three, four, five, six, or any number desirable for securing the bellows to another component of a substrate processing system).

[0078]

[0095] Bellows protrusion 623 can define an inner bellows aperture 624 and several outer bellows apertures 628. Apertures 624, 628 can be sized and shaped to couple bellows 600 to components of a substrate processing system, as described further below. Although bellows protrusion 623 is depicted as defining only one inner bellows aperture 624 and six outer bellows apertures 628, in other embodiments, there can be more or fewer apertures as needed to secure a component to the bellows.

[0079]

[0096] Bellows extension 621 may include a flange 627 extending outwardly from bellows extension 621. Flange 627 may define a channel 622 dimensioned to receive a component of a substrate processing system. For example, channel 622 may be dimensioned to receive a radio frequency (RF) gasket. In other embodiments, the bellows plate may not include a flange. Instead, a channel may be defined along the top surface of the bellows extension for receiving a component when a large outer diameter is not desired.

[0080]

[0097] 10-11 , bellows 600 is shown assembled with RF gasket 700 and spring mechanism 800. RF gasket 700 may be received within channel 622 of flange 627. RF gasket 700 may be secured to flange 627 through press fit, welding, soldering, or the like. RF gasket 700 may have a thickness and shape that causes it to protrude vertically beyond flange 627. In this manner, RF gasket 700 may contact another component of the substrate processing system (e.g., choke plate 400) when pedestal 310 is raised to the process position. However, in other embodiments, the RF gasket may be sized and shaped such that the top surface of the RF gasket is substantially flush with the top surface of the flange.

[0081]

[0098] RF gasket 700 and at least bellows plate 620 may be made of a conductive material, such as steel or aluminum, so that radio frequency continuity is established when RF gasket 700 contacts another component that may have a conductive material (e.g., choke plate 400). However, in other embodiments, other portions of the bellows, including the entire bellows, may be made of a conductive material.

[0082]

[0099] Spring mechanism 800 may include a body 804, an insulating fastening mechanism 801, a conductive fastening mechanism 802, a spring shaft 805, a spring 803, and a spring plate 806. Spring mechanism 800 may be secured to bellows 600 through fastening mechanisms 801, 802 that are received through bellows protrusion 623 and engage with body 804. Insulating fastening mechanism 801 may be a pin that helps secure body 804 to bellows plate 620, while conductive fastening mechanism 802 may be a screw that accomplishes the same. However, in other embodiments, the fastening mechanisms may take any form capable of securing the spring mechanism to the bellows. For example, the fastening mechanisms may both be pins, both may be screws, or any other type of fastening mechanism.

[0083]

[0100] The insulating fastening mechanism 801 may be made of an insulating material such as ceramic, while the conductive fastening mechanism 802 may be made of a conductive material such as steel or aluminum. In this way, a continuum of high frequency waves may be formed from the RF gasket to the conductive fastening mechanism 802, but will not pass through the insulating fastening mechanism 801. This may ensure that there is only one path for high frequency waves to flow.

[0084]

[0101] Spring mechanism 800 may be secured to a portion of ground plate 380 that extends through spring shaft 805 and through opening 807 defined by body 804. In particular, the upper end of spring shaft 805 may extend through the interior space of bellows 600 to engage within the aperture in ground plate 380.

[0085]

[0102] Spring 803 and spring plate 806 may surround spring shaft 805. Spring plate 806 may be secured to spring shaft 805 adjacent the bottom end of spring shaft 805 (e.g., via a press fit, threaded fit, welding, soldering, etc.). Spring plate 806 may have an outer diameter that is larger than the diameter of opening 807. This may result in spring plate 806 not passing through opening 807, but instead abutting body 804 when spring plate 806 moves vertically a certain amount.

[0086]

[0103] The upper end of spring 803 may be engaged (e.g., via welding, soldering, etc.) with the bottom surface of ground plate 380. Meanwhile, the bottom end of spring 803 may be engaged (e.g., via welding, soldering, etc.) with the top surface of spring plate 806. In this manner, spring 803 may help provide a spring force that limits the distance that ground plate 380 may move relative to spring mechanism 800 (and thus relative to bellows 600). Spring 803 may be a tension spring in various embodiments. This spring causes flange 627 and RF gasket to contact the underside of choke plate 400 (or other chamber component) as pedestal 310 rises, causing bellows 600 to expand. Spring 803 may stretch as bellows 600 expands. The contact between the RF gasket and choke plate 400 may help close the RF circuit by connecting choke plate 400 and pedestal 310. Lowering the pedestal to the transfer position lowers the baffle, eliminating contact with choke plate 400 and opening the RF circuit. Additionally, as pedestal 310 lowers and flange 627 and RF gasket move away from choke plate 400, the tension in spring 803 may help compress bellows 600 to its unexpanded state.

[0087]

[0104] 14-17 show partial views of the substrate processing system 300 as the bellows 600 moves from the transfer region 331 to and within the processing region 301. Turning first to FIG. 14, the bellows 600 is depicted in a stationary position within the substrate processing system 300. In this position, the pedestal 310 is furthest from the faceplate 340.

[0088]

[0105] 15, bellows 600 is depicted moving upward so that pedestal 310 exits chamber volume 331 and moves upward into processing region 301. In this position, pedestal 310 may be 90 mm from faceplate 340.

[0089]

[0106] 16, bellows 600 is depicted moving upward such that the RF gasket within bellows plate 620 contacts choke plate 400 at edge 401, closing the RF circuit between pedestal 310 and the chamber wall. Specifically, edge 401 of choke plate 400 completely stops the movement of plate 620. In this position, pedestal 310 may be 20 mm away from faceplate 340.

[0090]

[0107] 17, bellows 600 remains in contact with end 401 of choke plate 400, but bellows 600 transitions from the compressed position shown in FIGS. 14-16 to an extended position. In this position, pedestal 310 may be 5 mm away from faceplate 340. If a substrate is placed on pedestal 310, the substrate may be processed (e.g., from gases seeping through faceplate 340).

[0091]

[0108] Bellows 600 in the compressed position of FIGS. 14-16 may be 40 mm, while bellows 600 in the extended position of FIG. 17 may be 55 mm. However, other bellows measurements are contemplated. For example, the bellows in the compressed position may be between 10 mm and 90 mm, while the bellows in the extended position may be between 40 mm and 120 mm. Ground plate 380 may stop in the position shown in FIG. 17 based on at least one of reaching the maximum extension of bellows body 630 and / or spring force.

[0092]

[0109] Once the substrate processing cycle is complete, the pedestal 310 may be lowered by first returning the bellows 600 from the extended position to the compressed position, and then the pedestal 310 may be lowered by lowering both the bellows 600 and the pedestal 310 until the substrate processing system 300 reaches the position shown in Figure 14. The spring force may help compress the bellows to the unexpanded state.

[0093]

[0110] Although the foregoing description, for purposes of explanation, includes numerous details to facilitate an understanding of various embodiments of the present technology, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details or with additional details.

[0094]

[0111] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents can be used without departing from the spirit of the embodiments. Additionally, some well-known processes and elements have not been described to avoid unnecessarily obscuring the present technology. Therefore, the above description should not be construed as limiting the scope of the present technology. Furthermore, while a method or process may be described sequentially or stepwise, it should be understood that steps may be performed simultaneously or in a different order than listed.

[0095]

[0112] Where a range of values ​​is provided, unless the context clearly indicates otherwise, each intervening value between the upper and lower limit of that range is understood to be specifically disclosed, to the smallest unit of the lower limit. Any narrower range between any stated or unstated intervening value in a stated range, and any other stated or intervening value in that stated range, is also encompassed. The upper and lower limits of such narrower ranges may individually be included or excluded from that range. Each range in which either or both limits are included in the narrower range, or neither limit is included in the narrower range, is also encompassed within the technology, subject to any specifically excluded limit in the stated range. When a stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

[0096]

[0113] As used in this specification and claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, a reference to a "plate" includes a plurality of such plates, a reference to an "aperture" includes a reference to one or more apertures and equivalents thereof known to those skilled in the art, and so forth.

[0097]

[0114] Additionally, the terms "comprise(s)," "comprising," "contain(s)," "containing," "include(s)," and "including," when used in this specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, acts, or groups.

[0098]

[0115] Directional references such as "up," "upper," "lower," "down," "top," "left," "right," "bottom," etc. are not intended to be limiting, but rather to refer to the orientation of the components and directions as shown and described in the figure or figures to which the reference is made.

Claims

1. 1. A choke plate for use in a substrate processing system, comprising: a plate defining a first aperture therethrough and a second aperture therethrough; wherein the second aperture is laterally offset from the first aperture, and the plate comprises: a flange defining a purge inlet; and a rim defining a plurality of purge outlets in fluid communication with the purge inlet, each of the plurality of purge outlets in fluid communication with the first aperture; Includes a chalk plate.

2. The choke plate of claim 1 , wherein the purge inlet is defined along an upper surface of the flange.

3. The choke plate of claim 1 , wherein the purge inlet is defined along a bottom surface of the flange.

4. the rim at least partially defines a first plenum, a second plenum, and at least one baffle extending between the first plenum and the second plenum and providing fluid communication between the first plenum and the second plenum; The choke plate of claim 1 , wherein the first plenum, the second plenum, and the baffle are in fluid communication with the purge inlet and the plurality of purge outlets.

5. the at least one baffle includes a plurality of baffles including a first baffle and a second baffle; The choke plate of claim 4 , wherein the first baffle has a different cross-sectional area than the second baffle.

6. the first baffle is closer to the purge inlet than the second baffle; The choke plate of claim 5 , wherein the first baffle has a smaller cross-sectional area than the second baffle.

7. The choke plate of claim 4 , wherein the choke plate includes a closure plate that engages the rim to define the first plenum, the second plenum, and the baffle therebetween.

8. a chamber body defining a transfer region; a substrate support disposed within the transfer region; a lid plate disposed on the chamber body, the lid plate defining an aperture therethrough; a choke plate disposed on the lid plate along a first surface of the choke plate, the choke plate defines a first aperture therethrough and a second aperture therethrough; the second aperture is laterally offset from the first aperture; the choke plate includes a flange defining a purge inlet; the choke plate including a rim defining a plurality of purge outlets in fluid communication with the purge inlet, each of the plurality of purge outlets in fluid communication with the first aperture; a pumping liner installed on the choke plate; a face plate installed on the pumping liner; A substrate processing system comprising:

9. 10. The substrate processing system of claim 8, wherein the chamber body defines a channel in communication with the purge inlet to form a portion of a process purge flow path.

10. 10. The substrate processing system of claim 8, further comprising a bellows coupled to a lower surface of the substrate support, the bellows comprising a flange having an RF gasket disposed thereon aligned with the rim of the choke plate along a vertical axis.

11. the substrate support is vertically movable within the transfer region between a transfer position and a processing position; In the processing position, the bellows is expanded and the RF gasket contacts the rim of the choke plate to close an RF reflection path; 11. The substrate processing system of claim 10, wherein in the transfer position, the bellows is contracted and the RF gasket is vertically spaced from the rim of the choke plate.

12. 9. The substrate processing system of claim 8, wherein the rim of the choke plate has a length between about 70 mm and 100 mm.

13. a chamber body defining a transfer region; a substrate support disposed within the transfer region, the substrate support comprising: Ground plate, a first isolator disposed on the ground plate; and a second isolator disposed above the first isolator; a substrate support including: A substrate processing system comprising:

14. 14. The substrate processing system of claim 13, wherein the upper isolator defines a first set of recesses extending from a surface of the first isolator, and the second isolator defines a second set of recesses extending from a surface of the second isolator.

15. The substrate processing system of claim 14 , wherein the first set of recesses and the second set of recesses each have the same height.

16. 15. The substrate processing system of claim 14, wherein a height of each of the first set of recesses is different from a height of the second set of recesses.

17. the surface of the first isolator is a top surface, and the first set of recesses extends from the top surface; 15. The substrate processing system of claim 14, wherein the surface of the second isolator is a bottom surface, and the second set of recesses extends from the bottom surface.

18. The substrate processing system of claim 14 , wherein the first isolator defines a third set of recesses extending from a bottom surface of the first isolator.

19. The substrate processing system of claim 14 , further comprising an outer isolator disposed over at least a portion of the first isolator.

20. the upper isolator defining a ledge; 20. The substrate processing system of claim 19, wherein the outer isolator includes a flange mounted on the ledge.

Images