Light emitting device

Abstract

To provide a light emitting device capable of further improving uniformity of characteristics.SOLUTION: A light emitting device includes a substrate, a first light emitting element disposed on the substrate, a second light emitting element disposed on the substrate, and a wiring layer disposed on the first light emitting element and the second light emitting element, wherein the first light emitting element is configured to emit light by being supplied with power from the wiring layer, and the second light emitting element is configured such that power for light emission is not supplied from the wiring layer to the second light emitting element.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a light emitting device. [Background technology]

[0002] Patent Document 1 discloses a surface-emitting laser array device in which a plurality of surface-emitting laser elements are arranged. In the surface-emitting laser array device of Patent Document 1, dummy elements are arranged at both ends of a row of surface-emitting laser elements. Patent Document 1 discloses that this can improve the uniformity of the characteristics of the plurality of surface-emitting laser elements. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-114656 Summary of the Invention [Problem to be solved by the invention]

[0004] Further improvement in the uniformity of characteristics is required for light emitting devices such as those described in Patent Document 1. Therefore, an object of the present invention is to provide a light emitting device that can further improve the uniformity of characteristics. [Means for solving the problem]

[0005] According to one disclosure of the present specification, there is provided a light-emitting device comprising a substrate, a first light-emitting element arranged on the substrate, a second light-emitting element arranged on the substrate, and a wiring layer arranged on the first light-emitting element and the second light-emitting element, wherein the first light-emitting element is configured to emit light when power is supplied from the wiring layer, and the second light-emitting element is configured so that power leading to light emission is not supplied from the wiring layer to the second light-emitting element. [Effects of the Invention]

[0006] According to the present invention, a light emitting device capable of further improving the uniformity of characteristics is provided. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view of a light emitting device according to a first embodiment. [Figure 2] FIG. 2 is an enlarged plan view of the light emitting device according to the first embodiment. [Figure 3] 1 is a cross-sectional view of a light emitting device according to a first embodiment. [Figure 4A] 1 is an enlarged cross-sectional view of a light emitting device according to a first embodiment. [Figure 4B] FIG. 4 is an enlarged cross-sectional view of a light emitting device according to a modified example of the first embodiment. [Figure 5] FIG. 10 is a plan view of a light emitting device according to a second embodiment. [Figure 6] FIG. 10 is a plan view of a light emitting device according to a third embodiment. [Figure 7] FIG. 10 is a plan view of a light emitting device according to a fourth embodiment. [Figure 8] FIG. 10 is a plan view of a light emitting device according to a fifth embodiment. [Figure 9] FIG. 10 is a plan view of a light emitting device according to a sixth embodiment. [Figure 10] FIG. 13 is a plan view of the light-emitting module according to the seventh embodiment. [Figure 11] FIG. 13 is a cross-sectional view of the light-emitting module according to the seventh embodiment. [Figure 12] FIG. 13 is a plan view of the light-emitting module according to the eighth embodiment. [Figure 13] FIG. 13 is a cross-sectional view of a light-emitting module according to a ninth embodiment. [Figure 14] FIG. 13 is an enlarged cross-sectional view of a light emitting device according to a ninth embodiment. [Figure 15] FIG. 20 is a block diagram showing a schematic configuration of a distance measuring device according to a tenth embodiment. [Figure 16] FIG. 22 is a block diagram showing an example of the configuration of a moving body according to an eleventh embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The same or corresponding elements in multiple drawings are designated by common reference numerals, and their description may be omitted or simplified.

[0009] [First embodiment] FIG. 1 is a plan view of a light emitting device 10 according to this embodiment. The light emitting device 10 is a surface-emitting semiconductor light emitting device in which a plurality of light emitting elements are arranged on a substrate 111. The substrate 111 may be a compound semiconductor substrate such as GaAs. Each of the plurality of light emitting elements is configured by a VCSEL (Vertical Cavity Surface Emitting Laser) element having a distributed Bragg reflector (DBR). However, the light emitting elements may be elements other than VCSELs, such as light emitting diodes.

[0010] As shown on the coordinate axes in Fig. 1, the horizontal direction in Fig. 1 is the x direction, the vertical direction in Fig. 1 is the y direction, and the direction perpendicular to the plane of the paper in Fig. 1 is the z direction. Fig. 1 shows the planar structure of light-emitting device 10 on the xy plane. Multiple light-emitting units are arranged in an array on the xy plane, and the direction of emission of laser light from the light-emitting elements is the z direction.

[0011] The light emitting device 10 has a plurality of first light emitting elements L1 and two second light emitting elements L2 arranged on a substrate 111. Each of the first light emitting elements L1 and the second light emitting elements L2 has an elongated shape. The long sides of each of the first light emitting elements L1 and the second light emitting elements L2 extend in the y direction. The plurality of first light emitting elements L1 are arranged side by side in the x direction. The two second light emitting elements L2 are arranged on both ends in the x direction so as to sandwich the plurality of first light emitting elements L1 therebetween. That is, each of the two second light emitting elements L2 is arranged between the plurality of first light emitting elements L1 and an end of the substrate 111. In the example of FIG. 1, eight first light emitting elements L1 and two second light emitting elements L2 are illustrated, but the numbers of the first light emitting elements L1 and the second light emitting elements L2 are not limited to these and can be changed as appropriate.

[0012] A wiring layer is disposed above the region in which the first light-emitting elements L1 and the second light-emitting elements L2 are disposed. The wiring layer includes wiring 121 (first wiring) disposed above each of the first light-emitting elements L1 and wiring 122 (second wiring) disposed above each of the second light-emitting elements L2. Each of the wirings 121 and 122 is disposed to extend in the y direction. The wirings 121 are not electrically connected to each other. Furthermore, the wirings 121 and 122 are not electrically connected to each other.

[0013] The wiring 121 is connected to a pad 123. The wiring 122 is connected to a pad 124. The pads 123 and 124 are electrodes compatible with wire bonding. The pads 123 and 124 are connected by wires to pads on a mounting substrate on which the light emitting device 10 is mounted. Power for driving the first light emitting element L1 can be supplied to the pad 123 via wires from a control circuit arranged on the mounting substrate. The multiple pads 123 corresponding to the wiring 121 of the multiple first light emitting elements L1 are electrically isolated from each other, and driving power can be supplied to the wiring 121 at different times. Therefore, the multiple first light emitting elements L1 can emit light at different times from each other.

[0014] 1, the pads 123 and 124 are arranged on both ends of the substrate 111 in the y direction and aligned in the x direction in FIG. 1, but the arrangement of the pads 123 and 124 is not limited to this. For example, the pads 123 and 124 may be arranged on only one end of the substrate 111. The metal material constituting the wiring 121, 122 and the pads 123, 124 may be, for example, a laminated film having a lower layer of Au (gold) / Ti (titanium) and an upper layer of Cu (copper) / Cu plated layer formed on a Ti seed layer. This Cu plated layer is formed by an electrolytic plating process.

[0015] Each of the first light-emitting element L1 and the second light-emitting element L2 includes a plurality of mesas processed to have a trapezoidal cross section. Each of the plurality of mesas is a VCSEL element that emits laser light in the z direction from the top surface of the mesa. The light-emitting device 10 has an effective mesa region R1 and a dummy mesa region R2. The mesa in the effective mesa region R1 is configured to emit light when power is supplied from the wiring layer. The mesa in the dummy mesa region R2 is configured so that power is not supplied from the wiring layer to emit light. The first light-emitting element L1 near both ends in the y direction is a dummy mesa region R2, and the central portion of the first light-emitting element L1 is an effective mesa region R1. The entire second light-emitting element L2 is a dummy mesa region R2. Therefore, the dummy mesa region R2 is arranged to surround the effective mesa region R1.

[0016] FIG. 2 is an enlarged plan view of the light-emitting device 10 according to this embodiment. FIG. 2 is an enlarged view of region R3 in FIG. 1. As shown in FIG. 2, the wiring 121 is a combination of a long wiring extending vertically and a number of short wirings crosswise intersecting the long wiring. The wiring 121 is arranged so as to overlap three sides of each of the multiple mesas, which are rectangular in plan view. This allows the wiring 121 to open the top surface of each mesa while uniformly supplying current to each mesa. One wiring 121 is connected to two rows of mesas. This allows these two rows of mesas to emit light at the same time. The wiring 122 is also designed with a pattern similar to that of the wiring 121.

[0017] Figures 3(a) and 3(b) are cross-sectional views of the light emitting device 10 according to this embodiment. Figure 3(a) shows a cross section taken along line A-A' in Figure 2, and Figure 3(b) shows a cross section taken along line B-B' in Figure 2.

[0018] 3(a) shows the cross-sectional structure of the mesa and wiring layer near the boundary between the effective mesa region R1 and the dummy mesa region R2 in the first light-emitting element L1. As shown in FIG. 3(a), a semiconductor layer 160 formed by epitaxial growth is disposed on the front surface side of the substrate 111. A plurality of trapezoidal grooves are formed in the semiconductor layer 160 at predetermined intervals, and the semiconductor layer 160 between the grooves forms a mesa structure.

[0019] The wiring 121 is formed on the groove in the effective mesa region R1, with the transparent conductive film 151 and the insulating film 141 interposed therebetween, to fill the groove. Near the effective mesa region R1, the transparent conductive film 151 is formed to electrically connect the wiring 121 to the upper surface of the semiconductor layer 160. The upper surface of the mesa in the effective mesa region is covered with the transparent conductive film 151. Furthermore, an insulating film 141 is disposed on the side and bottom surfaces of the groove near the effective mesa region R1 to prevent short-circuiting between the transparent conductive film 151 and the inner layer of the semiconductor layer 160. The transparent conductive film 151 is a conductive material that transmits the emitted laser light and may be, for example, indium tin oxide (ITO). The insulating film 141 is an insulating material that insulates the semiconductor layer 160 from the wiring 121 or the transparent conductive film 151 and may be, for example, silicon oxide. In this manner, a plurality of effective mesas M1 are formed in the effective mesa region R1.

[0020] A back surface common electrode 131 is formed on the surface (back surface) of the substrate 111 opposite to the semiconductor layer 160 side. When a predetermined potential difference is applied between the wiring 121 and transparent conductive film 151 on the front surface side and the back surface common electrode 131 on the back surface side, laser light is emitted from the top surface of the effective mesa M1. Although the transparent conductive film 151 is disposed on the top surface of the effective mesa M1, the laser light passes through the transparent conductive film 151 and is emitted to the outside. Furthermore, the wiring 121 is opened on the top surface of the effective mesa M1 so as not to block the laser light.

[0021] In the vicinity of the dummy mesa region R2, an insulating film 141 (second insulating film) is formed so as to cover the upper surface of the semiconductor layer 160, the side surfaces of the grooves, and the bottom surfaces of the grooves. Wiring 121 is formed on the grooves of the dummy mesa region R2 so as to fill the grooves with the insulating film 141 interposed therebetween. As a result, a plurality of dummy mesas M2 are formed in the dummy mesa region R2. The wiring 121 and the dummy mesas M2 are insulated from each other by the insulating film 141. Since the wiring 121 is not electrically connected to the dummy mesas M2, laser light is not emitted from the dummy mesas M2, unlike the effective mesas M1.

[0022] At the boundary between the effective mesa region R1 and the dummy mesa region R2 (region R4 in FIG. 3(a)), only the insulating film 141 is formed in the portion between the wiring 121 and the dummy mesa M2. In addition, in region R4, the insulating film 141 and the transparent conductive film 151 are formed in the portion between the wiring 121 and the effective mesa M1. As a result, the wiring 121 in region R4 supplies power to the effective mesa M1 on the right of region R4, but does not supply power to the dummy mesa M2 on the left of region R4.

[0023] 3(b) shows a cross-sectional structure of the mesa and wiring layer near the boundary between the effective mesa region R1 of the first light-emitting element L1 and the dummy mesa region R2 of the second light-emitting element L2. In the effective mesa region R1 of the first light-emitting element L1, wiring 121, a transparent conductive film 151, and an insulating film 141 are arranged, as in FIG. 3(a), to form an effective mesa M1.

[0024] As shown in FIG. 3(b), a wiring 122 is formed on the groove of the dummy mesa region R2 of the second light-emitting element L2, with an insulating film 141 interposed therebetween, so as to fill the groove. Furthermore, an insulating film 141 (first insulating film) is formed near the dummy mesa region R2 of the second light-emitting element L2 so as to cover the upper surface of the semiconductor layer 160, the side surfaces of the groove, and the bottom surface of the groove. This insulates the wiring 122 from the dummy mesa M2. Because the boundary between the effective mesa region R1 and the dummy mesa region R2 is also the boundary between the first light-emitting element L1 and the second light-emitting element L2, the wiring 121 and 122 are not disposed in the groove at the boundary between the effective mesa region R1 and the dummy mesa region R2. The other structures are similar to those in FIG. 3(a), and therefore will not be described further.

[0025] The effect of providing the dummy mesa M2 as in this embodiment will be described. The wiring layer is patterned by photolithography. When forming a photoresist for patterning the wiring layer, even if exposure is performed using a photomask with a pattern in which the same shape is repeated, resists with different shapes may be formed depending on the position within the array of light-emitting elements.

[0026] For example, reducing wiring resistance is necessary to inject a high current into a VCSEL element or to uniform the optical output of simultaneously emitting VCSEL elements. Therefore, a thick wiring layer may be formed by electrolytic plating using a plating resist. In such cases, a plating resist with a thickness of, for example, 10 μm or more may be used. In the process of forming such a thick resist, positional dependency of the resist shape may occur due to differences in the degree of thermal shrinkage during baking. Figure 2 schematically illustrates the positional dependency of the resist shape. In the example of Figure 2, a rectangular wiring is formed at the wiring end W1 inside the array of light-emitting elements according to the photomask pattern, while a wiring with a tapered tip is formed at the wiring end W2 at the outermost periphery of the array of light-emitting elements. This can result in a pattern shape distribution in which the wiring near the outermost periphery of the array of light-emitting elements is thinner than the wiring inside the array of light-emitting elements.

[0027] If a distribution in the shape of the wiring layer occurs within an array composed of multiple light-emitting elements, differences in carrier injection characteristics, differences in vignetting of emitted light, etc., may reduce the uniformity of characteristics among the light-emitting elements. Therefore, in this embodiment, dummy mesas M2 are arranged in dummy mesa regions R2 surrounding the effective mesa region R1. Unlike the effective mesa M1, the dummy mesas M2 do not emit laser light and are therefore not affected by the wiring pattern shape distribution. Therefore, by using the dummy mesa region R2 in areas where the wiring pattern shape distribution is highly affected, such as near the periphery of the light-emitting element array, the influence of the wiring pattern shape distribution on the characteristics can be reduced, thereby making the characteristic distribution within the array more uniform. Therefore, this embodiment provides a light-emitting device 10 that can further improve the uniformity of characteristics.

[0028] In this embodiment, the dummy mesa M2 is formed by disposing an insulating film 141 between the wirings 121, 122 and the semiconductor layer 160 to insulate the wirings 121, 122 from the semiconductor layer 160. The structure of the semiconductor layer 160 constituting the dummy mesa M2 is the same as the structure of the semiconductor layer 160 constituting the effective mesa M1. That is, the only difference between the element structure of the dummy mesa M2 and the element structure of the effective mesa M1 is the pattern of the insulating film 141 and the transparent conductive film 151.

[0029] One method for reducing the influence of the wiring pattern shape distribution is to correct the shape near the periphery of the light-emitting element array in advance in the pattern design of the photomask for the wiring layer. However, because the degree of photomask pattern correction varies depending on various factors such as the element pitch and mesa step height, optimizing the correction pattern requires a lot of trial and error. Therefore, the method of arranging the dummy mesa M2 of this embodiment is effective in that it does not require as much trial and error as the method of correcting the photomask pattern.

[0030] The following describes a more specific example of the configuration of the semiconductor layer 160 and an example of a manufacturing process for the light emitting device 10. Fig. 4A is an enlarged cross-sectional view of the light emitting device 10 according to this embodiment. Fig. 4A is an enlarged view of a region R4 in Fig. 3.

[0031] A lower DBR 161 is disposed on the substrate 111. A spacer layer 162 is disposed on the lower DBR 161, an active layer 163 is disposed on the spacer layer 162, and a spacer layer 164 is disposed on the active layer 163. An upper DBR 166 is disposed on the spacer layer 164. The oxide constriction portion 165 is formed by selectively oxidizing a portion of the upper DBR 166. A contact layer 167 is disposed on the upper DBR 166. The lower DBR 161, spacer layer 162, active layer 163, spacer layer 164, oxide constriction portion 165, upper DBR 166, and contact layer 167 correspond to the semiconductor layer 160 in FIG. 3 .

[0032] The spacer layer 162, the active layer 163, and the spacer layer 164 form the resonator portion of the light-emitting device 10. The lower DBR 161 and the upper DBR 166 are reflectors that confine the light generated in the active layer 163 within the resonator. An oxide constriction portion 165 is formed in part of the upper DBR 166 so as to restrict the path of the current injected into the active layer 163.

[0033] Next, a description will be given of a manufacturing process for the light emitting device 10. The light emitting device 10 is assumed to be a VCSEL array element that emits light in the 940 nm band.

[0034] First, for example, an n-type GaAs substrate is prepared as the substrate 111. Next, the semiconductor layer 160 that constitutes the lower DBR 161, spacer layer 162, active layer 163, spacer layer 164, upper DBR 166 including a selective oxidation layer, and contact layer 167 is epitaxially grown on the substrate 111. These semiconductor layers can be formed by metalorganic chemical vapor deposition or molecular beam epitaxy.

[0035] The lower DBR 161 may be formed by repeatedly stacking a predetermined number of n-type GaAs layers and n-type AlGaAs layers, for example. The spacer layers 162 and 164 may be GaAs or AlGaAs layers, for example. The active layer 163 may be a multi-quantum well structure including multiple InGaAs well layers, each sandwiched between AlGaAs barrier layers, for example. The selective oxidation layer that is part of the upper DBR 166 may be formed by stacking a predetermined number of n-type GaAs layers and an n-type AlGaAs layer, for example. 0.98 The upper DBR 166, excluding the selective oxidation layer, may be formed by repeatedly stacking a predetermined number of p-type GaAs layers and p-type AlGaAs layers, for example. The contact layer 167 may be a p-type GaAs layer.

[0036] Next, silicon oxide (SiO x A silicon oxide film (not shown) is formed by plasma CVD, and then the silicon oxide film is patterned using photolithography and wet etching.

[0037] Next, dry etching is performed to form a mesa structure using a silicon oxide film as a hard mask. In this etching, it is desirable to disconnect the contact layer 167, the upper DBR 166, the oxide constriction portion 165, the spacer layer 164, the active layer 163, and the spacer layer 162. It is also desirable to disconnect a portion of the lower DBR 161. Then, a heat treatment is performed in a water vapor atmosphere to form a p-type Al 0.98 The GaAs layer is selectively oxidized from the sidewall of the mesa to form an oxidized confinement portion 165 .

[0038] Next, photolithography is used to form a resist with an opening over the mesa where the silicon oxide hard mask remains, and buffered hydrofluoric acid is used to selectively wet-etch the silicon oxide film in the opening of the resist, after which the resist is removed.

[0039] Next, an insulating film is formed to cover the mesa structure. Then, an opening is formed in the insulating film using photolithography and etching techniques. This forms a patterned insulating film 141. Next, an indium tin oxide film is formed as a transparent conductive film to cover the mesa structure, and heat treatment is performed as necessary. Next, the transparent conductive film is patterned using photolithography and wet etching techniques so that the transparent conductive film remains on the effective mesa M1. This forms a patterned transparent conductive film 151.

[0040] Next, a wiring layer is formed. The wiring layer is assumed to be composed of a lower wiring layer and an upper wiring layer. The lower wiring layer is formed using lift-off technology. First, photoresist is formed using photolithography technology in areas where the lower wiring layer will not be formed. Next, a metal layer such as Au / Ti is formed by vacuum deposition so as to cover the entire surface. After that, the unnecessary metal layer on the photoresist is removed together with the photoresist, thereby forming the lower wiring layer.

[0041] The upper wiring layer is formed by electrolytic plating. First, a seed layer such as Cu / Ti is formed. Then, photolithography is used to form a plating resist in areas where the upper wiring layer will not be formed. Baking may be performed when forming this plating resist. Next, a thick plating layer such as Cu is formed on the seed layer in the openings of the photoresist by electrolytic plating. Next, the plating resist is removed. Then, unnecessary parts of the seed layer are removed.

[0042] Next, an insulating film such as silicon oxide (not shown in FIG. 4A) is formed to cover the entire surface. After that, photolithography and wet etching are used to selectively remove the insulating film covering the pads 123 and 124 of the wiring layer, thereby exposing the pads 123 and 124.

[0043] Next, the substrate 111 is polished from the surface opposite to the surface on which the semiconductor layer 160 is formed to reduce its thickness, and then a rear common electrode 131 is formed on the polished surface of the substrate 111 .

[0044] In this manner, a VCSEL array element including the effective mesa M1 and the dummy mesa M2 is manufactured, as shown in Figures 1 to 4A. However, the structure and manufacturing method of the light emitting device 10 are not limited to this, and the light emitting device 10 may be, for example, a planar VCSEL array element.

[0045] Furthermore, the VCSEL elements and VCSEL arrays described below require a higher current injection value, and the configuration of the present invention can realize a light source capable of generating optical pulses with short pulse widths and high peak values. Figure 4B is an enlarged cross-sectional view of a light-emitting device 10 according to a modified example of this embodiment. Figure 4B is an enlarged view of region R4 in Figure 3. An n-type lower DBR 161 is disposed on an n-type substrate 111. An undoped spacer layer 169 is disposed on the lower DBR 161, and a saturable absorbing layer 170 is provided within the undoped spacer layer 169. An n-type spacer layer 168 is disposed on the undoped spacer layer 169. Undoped layers are stacked on the n-type spacer layer 168 in this order: a spacer layer 162, an active layer 163, and a spacer layer 164. A p-type upper DBR 166 including a selective oxidation layer is disposed on the spacer layer 164. A contact layer 167 is disposed on the upper DBR 166. The lower DBR 161, the undoped spacer layer 169 including the saturable absorbing layer 170, the n-type spacer layer 168, the spacer layer 162, the active layer 163, the spacer layer 164, the upper DBR 166 including the selective oxidation layer, and the contact layer 167 correspond to the semiconductor layer 160 in FIG.

[0046] Although the figures of this embodiment illustrate a VCSEL element with a prismatic mesa structure, the present invention is not limited to this and the VCSEL element of this embodiment may have, for example, a cylindrical mesa structure. Also, although the figures of this embodiment illustrate a trapezoidal groove forming the mesa structure, the present invention is not limited to this and the VCSEL element of this embodiment may have, for example, a rectangular groove. This also applies to each of the following embodiments.

[0047] [Second embodiment] In this embodiment, a modified example in which the arrangement of light emitting elements and the planar layout of wiring layers are changed from those in the first embodiment will be described. In this embodiment, the description of elements common to the first embodiment may be omitted or simplified.

[0048] 5 is a plan view of a light emitting device 10 according to this embodiment. The light emitting device 10 of this embodiment includes four first light emitting elements L1 aligned in the x direction and two second light emitting elements L2 arranged so as to sandwich the four first light emitting elements L1.

[0049] Each of the first light-emitting element L1 and the second light-emitting element L2 includes a plurality of mesas, as in the first embodiment. The light-emitting device 10 is provided with an effective mesa region R1 and a dummy mesa region R2. The portions of the first light-emitting element L1 near both ends in the y direction are dummy mesa regions R2, and the central portion of the first light-emitting element L1 is the effective mesa region R1. In this embodiment, the dummy mesa region R2 is a 2-row x 4-column area near both ends in the y direction of the first light-emitting element L1. Furthermore, the effective mesa region R1 is a 13-row x 4-column area in the central portion of the first light-emitting element L1. The 13-row x 4-column effective mesas emit light at the same time. The entire second light-emitting element L2 (17 rows x 2 columns) is the dummy mesa region R2. In this embodiment as well, the dummy mesa region R2 is arranged to surround the effective mesa region R1.

[0050] A plurality of pads 123 are arranged to correspond to the wirings 121 of the plurality of first light-emitting elements L1, respectively. The plurality of pads 123 are electrically isolated from one another, and can supply driving power to the wirings 121 at different timings. Therefore, the plurality of first light-emitting elements L1 can emit light at different timings.

[0051] Of the 17 rows and 4 columns of mesas included in the first light-emitting element L1, the wiring 121 is arranged in a U-shape in the first column (left end) so as to overlap three sides of the mesa except for the left side. Furthermore, of the 17 rows and 4 columns of mesas included in the first light-emitting element L1, the wiring 121 is arranged in a grid pattern in the second, third, and fourth columns (right end) so as to overlap four sides of the mesa. Since the wiring 121 of two adjacent first light-emitting elements L1 must be electrically isolated from each other, it is necessary to secure an insulating space between the wiring 121. By not overlapping the wiring 121 with the side of the mesa at one end of the first light-emitting element L1, this insulating space can be secured with area efficiency. By allocating the secured area to the wiring width, the wiring resistance can be further reduced.

[0052] Note that, because the transparent conductive film 151 is disposed on the top surface of the mesa in the effective mesa region R1, the diffusion of carriers is similar when the wiring 121 overlaps three sides of the mesa and when the wiring 121 overlaps four sides of the mesa. Therefore, the device in which the wiring 121 overlaps three sides of the mesa and the device in which the wiring 121 overlaps four sides of the mesa have similar light-emitting characteristics.

[0053] In the example of FIG. 5 , the pads 123 and 124 are arranged at both ends of the substrate 111 in the y direction and aligned in the x direction in FIG. 5 , but the arrangement of the pads 123 and 124 is not limited to this. For example, the pads 123 and 124 may be arranged at only one end of the substrate 111. However, by arranging the pads 123 at both ends of the substrate 111, carriers can be injected into the wiring 121 from both the top and bottom, thereby making the light emission characteristics more uniform. The pad 124 is connected to the wiring 122 for the dummy mesa but is not connected to the wiring 121 for the effective mesa. Therefore, even without the pad 124, the dummy mesa can operate without emitting light, so the pad 124 may be omitted.

[0054] As described above, the light emitting device 10 of this embodiment is a modified example in which four first light emitting elements L1, each having an effective mesa of 13 rows and 4 columns, are arranged. In this embodiment, too, a light emitting device 10 is provided that can further improve the uniformity of characteristics, as in the first embodiment.

[0055] [Third embodiment] In this embodiment, a modified example in which the arrangement of light emitting elements and the planar layout of wiring layers are changed from those in the second embodiment will be described. In this embodiment, the description of elements common to the second embodiment may be omitted or simplified.

[0056] Fig. 6 is a plan view of a light emitting device 10 according to this embodiment. The light emitting device 10 in Fig. 6 includes second light emitting elements L2-1 and L2-2 arranged to sandwich four first light emitting elements L1. The configuration of the second light emitting element L2-1 and the configuration of the second light emitting element L2-2 are different from each other.

[0057] The configuration of the second light-emitting element L2-2 is similar to that of the second light-emitting element L2 in the second embodiment.

[0058] In contrast, the wiring 122 on the second light-emitting element L2-1 is different from the wiring 122 on the second light-emitting element L2-2 in that, like the wiring 122 on the adjacent first light-emitting element L1, the first row (left side) is arranged in a U-shape and the second row (right side) is arranged in a grid pattern. Therefore, the pattern of the wiring 122 on the second light-emitting element L2-1 and the pattern of the wiring 122 on the second light-emitting element L2-2 are different from each other.

[0059] The second light-emitting elements L2-1 and L2-2 do not emit light. Therefore, even if the pattern of the wiring 122 on the second light-emitting element L2-1 and the pattern of the wiring 122 on the second light-emitting element L2-2 are different as in the present embodiment, the same light-emitting characteristics as in the second embodiment can be obtained. Therefore, in the present embodiment, a light-emitting device 10 is provided that can further improve the uniformity of characteristics, as in the first embodiment.

[0060] [Fourth embodiment] In this embodiment, a modified example in which the arrangement of light emitting elements and the planar layout of wiring layers are changed from those in the second embodiment will be described. In this embodiment, the description of elements common to the second embodiment may be omitted or simplified.

[0061] 7 is a plan view of a light emitting device 10 according to this embodiment. The light emitting device 10 of this embodiment includes one first light emitting element L1 and two second light emitting elements L2 arranged to sandwich the first light emitting element L1. In this embodiment, the entire effective mesa region R1 is included in one first light emitting element L1.

[0062] In this embodiment, the dummy mesa region R2 is an area of ​​2 rows x 16 columns near both ends of the first light-emitting element L1 in the y direction. The effective mesa region R1 is an area of ​​13 rows x 16 columns in the center of the first light-emitting element L1. The effective mesas of the 13 rows x 16 columns emit light at the same time. The entire second light-emitting element L2 (17 rows x 2 columns) is the dummy mesa region R2. In this embodiment, the dummy mesa region R2 is also arranged to surround the effective mesa region R1.

[0063] In this embodiment, the pad 123 is connected to the entire wiring 121 of one first light-emitting element L1. Therefore, all of the multiple effective mesas in the light-emitting device 10 emit light at the same timing.

[0064] As in the above-described embodiment, a transparent conductive film 151 is disposed within the effective mesa region R1. One transparent conductive film 151 may be disposed continuously on multiple effective mesas, or multiple separate transparent conductive films 151 may be disposed.

[0065] 7, the pads 123 and 124 are arranged at both ends of the substrate 111 in the y direction, but the arrangement of the pads 123 and 124 is not limited to this. For example, the pads 123 and 124 may be arranged at only one end of the substrate 111. However, by arranging the pads 123 at both ends of the substrate 111, carriers can be injected into the effective mesa from both the top and bottom via the wiring 121, which can make the light emission characteristics more uniform.

[0066] As described above, the light emitting device 10 of this embodiment is a modified example in which one first light emitting element L1 including effective mesas arranged in 13 rows and 16 columns is arranged. In this embodiment, too, a light emitting device 10 is provided which can further improve the uniformity of characteristics, as in the first embodiment.

[0067] [Fifth embodiment] In this embodiment, a modification in which the planar layout of the wiring layers is changed from that of the fourth embodiment will be described. In this embodiment, the description of elements common to the fourth embodiment may be omitted or simplified.

[0068] FIG. 8 is a plan view of the light-emitting device 10 according to this embodiment. This embodiment differs from the fourth embodiment in that the pad 124 is not provided and the wiring 121 is connected to the wiring 122. In other words, wiring having the same potential as the wiring 121 is provided not only on the effective mesa region R1 but also on the dummy mesa region R2. As in the above-described embodiment, an insulating film 141 is provided between the wiring 122 and the semiconductor layer of the dummy mesa. Therefore, even with the configuration of this embodiment, power is not supplied from the wiring 122 to the dummy mesa, and the second light-emitting element L2 does not emit light. Therefore, the light-emitting device 10 according to this embodiment can operate in the same manner as the light-emitting device 10 according to the fourth embodiment.

[0069] As described above, the light emitting device 10 of this embodiment is a modified example in which the pad 124 is omitted and the wiring 121 is connected to the wiring 122. In this embodiment, too, a light emitting device 10 is provided that can further improve the uniformity of characteristics, similar to the first embodiment.

[0070] [Sixth embodiment] In this embodiment, a modification in which the planar layout of the wiring layers is changed from that of the fifth embodiment will be described. In this embodiment, the description of elements common to the fifth embodiment may be omitted or simplified.

[0071] 9 is a plan view of the light emitting device 10 according to this embodiment. In this embodiment, the pads 123 are disposed so as to surround the first light emitting element L1 and the second light emitting element L2, and are connected to the outer peripheral ends of the wiring 121 and the wiring 122.

[0072] An insulating film 141 is disposed between the wiring 122 and the semiconductor layer of the dummy mesa. Therefore, even in the configuration of this embodiment, power is not supplied from the wiring 122 to the dummy mesa, and the second light-emitting element L2 does not emit light. Therefore, the light-emitting device 10 of this embodiment can perform the same operation as the light-emitting device 10 of the fourth embodiment.

[0073] In this embodiment, the pad 123 is disposed to surround the first light-emitting element L1 and the second light-emitting element L2, which allows carriers to be injected into the effective mesa from all four sides via the wiring 121, thereby making the light-emitting characteristics more uniform.

[0074] As described above, the light emitting device 10 of this embodiment is a modified example in which the pad 123 is arranged to surround the first light emitting element L1 and the second light emitting element L2. In this embodiment, too, a light emitting device 10 is provided that can further improve the uniformity of characteristics, similar to the first embodiment.

[0075] [Seventh embodiment] In this embodiment, a configuration example of a light emitting module including the light emitting device 10 of the second embodiment will be described. In this embodiment, the description of elements common to the second embodiment may be omitted or simplified.

[0076] FIG. 10 is a plan view of a light-emitting module according to this embodiment. The light-emitting module includes a light-emitting device 10 according to the second embodiment, a mounting substrate 20, and a control circuit 30. The mounting substrate 20 is a substrate such as a printed circuit board that is compatible with wire bonding and surface mounting. The chip that constitutes the light-emitting device 10 is mounted on the mounting substrate 20 so that the surface on which the back-surface common electrode 131 is disposed faces the mounting substrate 20. The chip that constitutes the control circuit 30 is also mounted on the mounting substrate 20. The mounting substrate 20 has a plurality of pads 211 and 212. Each of the plurality of pads 211 is connected to the control circuit 30, and each of the plurality of pads 212 is connected to a ground terminal of the mounting substrate 20.

[0077] The pads 123 of the four first light-emitting elements L1 are connected to corresponding pads 211 on the mounting substrate 20 via three wires 221. The control circuit 30 supplies driving power to the first light-emitting elements L1 via the pads 211 and wires 221. The control circuit 30 is configured to be able to independently control the light emission of the four first light-emitting elements L1. The process of connecting the pads with the wires 221 is performed using a wire bonder.

[0078] Note that by connecting a plurality of wires 221 between one pad 123 and one pad 211, it is possible to reduce the resistance and inductance caused by the wires 221 compared to when there is only one wire 221. This can improve the light emitting performance of the light emitting device 10. However, this is not essential, and the number of wires 221 connected between one pad 123 and one pad 211 may be one.

[0079] Each of the pads 124 of the two second light-emitting elements L2 is connected to a corresponding pad 212 of the mounting substrate 20 via a wire 221. As a result, the ground potential is supplied from the mounting substrate 20 to the pads 124 of the second light-emitting elements L2.

[0080] 11 is a cross-sectional view of the light-emitting module according to this embodiment, taken along line CC' in FIG.

[0081] As shown in FIG. 11 , pads 211 and 231 are arranged on the mounting surface of the mounting substrate 20. Internal wirings 232 and 233 are arranged on the inner layer of the mounting substrate 20. The pad 211 is a surface terminal for wire bonding. The pad 211 is electrically connected to the control circuit 30 via the internal wiring 233. Therefore, driving power output from the control circuit 30 is supplied to the effective mesa M1 via the internal wiring 233, the pad 211, the wire 221, the pad 123, the wiring 121, and the transparent conductive film 151. Note that an insulating film 141 is arranged between the wiring 121 and the dummy mesa M2, and the wiring 121 and the dummy mesa M2 are insulated from each other by the insulating film 141, so that driving power is not supplied to the dummy mesa M2.

[0082] The pad 231 is a surface terminal for surface mounting. The pad 231 is electrically connected to the ground terminal of the mounting substrate 20 via internal wiring 232. The rear surface common electrode 131 of the light emitting device 10 is connected to the pad 231 by a member such as solder or conductive paste. Therefore, the rear surface common electrode 131 is electrically connected to the ground terminal of the mounting substrate 20 via the pad 211 and internal wiring 233.

[0083] As described above, according to this embodiment, a light emitting module including the light emitting device 10 of the second embodiment is provided. Note that light emitting modules including the light emitting device 10 of embodiments other than the second embodiment can also be realized in the same way.

[0084] Note that the pad 124 of the second light-emitting element L2 is supplied with a ground potential, and the back surface common electrode 131 is also supplied with a ground potential, so the potential difference across the dummy mesa M2 of the second light-emitting element L2 is zero. Therefore, the insulating film 141 may or may not be provided on the dummy mesa M2 of the second light-emitting element L2.

[0085] [Eighth embodiment] In this embodiment, a modified example in which the configuration of the second light-emitting element L2 is changed from the light-emitting module of the seventh embodiment will be described. In this embodiment, the description of elements common to the seventh embodiment may be omitted or simplified.

[0086] 12 is a plan view of a light-emitting module according to this embodiment. The difference between this embodiment and the seventh embodiment is that the pad 124 for the second light-emitting element L2 is not provided in the light-emitting device 10, and the pad 212 is not provided on the mounting substrate 20. In this case, the wiring 122 of the second light-emitting element L2 is in a floating state. Since no potential difference sufficient to cause light emission is applied to the dummy mesa M2 of the second light-emitting element L2, the dummy mesa M2 does not emit light. Therefore, this embodiment also provides a light-emitting module capable of operating in the same manner as the seventh embodiment.

[0087] In this way, it is not essential that the ground potential be supplied to the second light-emitting element L2. While an example in which the pad 124 is not provided is shown in Fig. 12, this is not limiting. For example, a configuration in which the pad 124 is provided but the wire 221 is not connected may also be used, and in this case as well, the wiring 122 of the second light-emitting element L2 will be in a floating state.

[0088] [Ninth embodiment] In this embodiment, a modification of the light emitting module of the seventh or eighth embodiment will be described, in which the structure of the light emitting element is changed from a mesa type to a planar type. In this embodiment, the description of elements common to the seventh or eighth embodiment may be omitted or simplified.

[0089] Fig. 13 is a cross-sectional view of the light-emitting module according to this embodiment. Like Fig. 11, Fig. 13 shows a cross-section taken along line CC' in Fig. 10. Fig. 14 is an enlarged cross-sectional view of the light-emitting device 10 according to this embodiment. Fig. 14 is an enlarged view of region R5 in Fig. 13.

[0090] As shown in FIGS. 13 and 14 , this embodiment differs from the seventh embodiment in that, instead of a mesa structure in which each light-emitting portion is separated by a groove, a planar structure in which each light-emitting portion is separated by an ion-implanted region 171 is used. The ion-implanted region 171 is formed, for example, by an ion-implantation process (proton-implantation process) in which protons (positive hydrogen ions) are implanted into the semiconductor layer 160. The ion-implanted region 171 has a higher resistance than the semiconductor layer 160 to which ions are not implanted. Therefore, like the groove portions in a mesa structure, the ion-implanted region 171 functions as an insulating region that electrically separates each light-emitting portion. As a result, in this embodiment, an effective light-emitting portion P1 and a dummy light-emitting portion P2 are formed instead of the effective mesa M1 and the dummy mesa M2. The effective light-emitting portion P1 and the dummy light-emitting portion P2 have the same functions and operations as the effective mesa M1 and the dummy mesa M2.

[0091] This embodiment also provides a light-emitting module capable of operating in the same manner as the seventh and eighth embodiments. Furthermore, this embodiment employs a planar structure formed by ion implantation rather than a mesa structure, eliminating the need for groove formation and simplifying the structure and process. The configuration shown in FIG. 4B of the first embodiment may also be a planar structure similar to this embodiment. That is, the structure of FIG. 4B may be modified to a planar structure formed by ion implantation rather than a mesa structure.

[0092] [Tenth embodiment] A distance measuring device according to the tenth embodiment will be described with reference to Fig. 15. Fig. 15 is a block diagram showing a schematic configuration of the distance measuring device according to this embodiment.

[0093] The distance measuring device 700 according to this embodiment is a distance measuring device (LiDAR device) in which the light emitting device 10 or light emitting module described in any one of the first to ninth embodiments is applied to a light source unit. The distance measuring device 700 can be configured with a control unit 710, a surface emitting laser array driver 712, a surface emitting laser array 714, an emission-side optical system 718, a reception-side optical system 720, an image sensor 722, and a distance data processing unit 724.

[0094] The surface-emitting laser array 714 is the light-emitting device 10 or light-emitting module described in any one of the first to ninth embodiments. The surface-emitting laser array driver 712 is a drive unit that receives a drive signal from the control unit 710, generates a drive current for oscillating the surface-emitting laser array 714, and outputs the drive current to the surface-emitting laser array 714. Note that the surface-emitting laser array 714 and the surface-emitting laser array driver 712 do not necessarily need to be separate components, and the surface-emitting laser array 714 may have the function of the surface-emitting laser array driver 712.

[0095] The light-emitting side optical system 718 is an optical system that emits laser light generated by the surface-emitting laser array 714 toward the range to be measured. The light-receiving side optical system 720 is an optical system that guides laser light reflected by the measurement object 1000 to an image sensor 722. Note that although the light-emitting side optical system 718 and the light-receiving side optical system 720 are represented by a single convex lens-shaped member in Fig. 15, they are not composed of only a single convex lens-shaped member, but are composed of a lens group combining multiple lenses.

[0096] The image sensor 722 is a photoelectric conversion device in which a plurality of pixels, each including a photoelectric conversion unit, are arranged in a two-dimensional array, and is a light-receiving device that outputs an electrical signal in response to incident light. The image sensor 722 may be an imaging device such as a CMOS image sensor or a SPAD image sensor. The distance data processing unit 724 functions as a distance information acquisition unit that generates and outputs information regarding the distance to the measurement target object 1000 present in the distance measurement range based on the signal from the image sensor 722. Note that the distance data processing unit 724 only needs to be electrically connected to the image sensor 722, and may be disposed in the same package as the image sensor 722 or in a package separate from the image sensor 722.

[0097] The control unit 710 is configured by an information processing device including a microcomputer and logic circuits, and functions as a central processing device that controls the operation of each unit and performs various calculation processes in the distance measuring device 700.

[0098] Next, the operation of the distance measuring device according to this embodiment will be described with reference to Fig. 15. First, the control unit 710 outputs a drive signal to the surface-emitting laser array driver 712. The surface-emitting laser array driver 712 receives the drive signal from the control unit 710 and injects a current of a predetermined current value into the surface-emitting laser array 714. This causes the surface-emitting laser array 714 to oscillate, and laser light is output from the surface-emitting laser array 714.

[0099] The laser light generated by the surface-emitting laser array 714 is emitted toward the distance measurement range by the light-emitting side optical system 718. Of the laser light irradiated onto the measurement object 1000 in the distance measurement range, the laser light reflected by the measurement object 1000 and incident on the light-receiving side optical system 720 is guided to the image sensor 722 by the light-receiving side optical system 720.

[0100] Each pixel of the image sensor 722 generates an electric signal pulse in accordance with the timing of incidence of the laser light. The electric signal pulse generated by the image sensor 722 is input to the distance data processing unit 724.

[0101] The distance data processing unit 724 generates information about the distance to the measurement object 1000 along the light propagation direction based on the reception timing of the electrical signal pulse output from the image sensor 722. For example, the information about the distance to the measurement object 1000 is generated based on the time difference between the timing at which light is emitted from the surface-emitting laser array 714 and the timing at which light is received by the image sensor 722. By calculating the distance information based on the electrical signal pulse output from each pixel of the image sensor 722, three-dimensional information about the measurement object 1000 can be acquired.

[0102] The ranging device 700 of this embodiment can be applied to, for example, a control device in the automotive field that controls a vehicle to avoid collision with another vehicle, or a control device that controls automatic driving by following another vehicle. The ranging device 700 of this embodiment can also be applied to other moving objects (moving devices) such as ships, aircraft, and industrial robots, as well as moving object detection systems. The ranging device 700 of this embodiment can be widely applied to devices that use information about objects recognized three-dimensionally, including distance information. These moving objects can be configured to include the ranging device of this embodiment and control means that controls the moving object based on information about the distance acquired by the ranging device.

[0103] Furthermore, the three-dimensional information including depth that can be acquired by the distance measuring device 700 of this embodiment can also be used in an image capturing device, an image processing device, a display device, etc. For example, by using the three-dimensional information acquired by the distance measuring device 700 of this embodiment, it is possible to display a virtual object on an image of the real world without creating a sense of incongruity. Furthermore, by storing the three-dimensional information together with the image information, it is also possible to correct the blurring of the captured image after shooting.

[0104] [Eleventh embodiment] A moving body according to the eleventh embodiment will be described with reference to Figures 16(a) and 16(b), which are block diagrams showing examples of the configuration of a moving body according to this embodiment.

[0105] 16(a) shows an example of the configuration of a device mounted on a vehicle as an in-vehicle camera. The device 80 has a distance measurement unit 803 that measures the distance to an object to be measured, and a collision determination unit 804 that determines whether or not there is a possibility of a collision based on the distance measured by the distance measurement unit 803. The distance measurement unit 803 may be configured, for example, by the distance measuring device 700 described in the tenth embodiment. Here, the distance measurement unit 803 is an example of a distance information acquisition means that acquires distance information to the object to be measured. In other words, the distance information is information related to the distance to the object to be measured, etc.

[0106] The device 80 is connected to a vehicle information acquisition device 810 and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. The device 800 is also connected to a control ECU 820, which is a control device that outputs a control signal to generate a braking force for the vehicle based on the determination result of the collision determination unit 804. The device 80 is also connected to an alarm device 830 that issues an alarm to the driver based on the determination result of the collision determination unit 804. For example, if the collision determination unit 804 determines that there is a high possibility of a collision, the control ECU 820 performs vehicle control to avoid the collision and mitigate damage by applying the brakes, releasing the accelerator, suppressing engine output, etc. The alarm device 830 warns the user by sounding an alarm, displaying alarm information on the screen of a car navigation system, etc., or vibrating the seat belt or steering wheel. These devices of the device 80 function as a mobile object control unit that controls the operation of controlling the vehicle as described above.

[0107] In this embodiment, the device 80 measures the distance around the vehicle, for example, the front or rear. Fig. 16(b) shows the device when measuring the distance in front of the vehicle (distance measurement range 850). A vehicle information acquisition device 810, which serves as a distance measurement control means, sends an instruction to the device 80 or the distance measurement unit 803 to perform a distance measurement operation. This configuration can further improve the accuracy of distance measurement.

[0108] Although the above describes an example of control to prevent collision with other vehicles, the present invention can also be applied to control of automatic driving by following other vehicles, control of automatic driving to prevent deviation from a lane, etc. Furthermore, the present invention is not limited to vehicles such as automobiles, but can be applied to moving objects (moving devices) such as ships, aircraft, artificial satellites, industrial robots, and consumer robots. In addition, the present invention can be applied to a wide range of devices that use object recognition or biometric recognition, such as intelligent transport systems (ITS) and surveillance systems, without being limited to moving objects.

[0109] [Modified embodiment] The present invention is not limited to the above-described embodiments and can be modified in various ways. For example, an example in which part of the configuration of one embodiment is added to another embodiment, or an example in which part of the configuration of one embodiment is replaced with part of the configuration of another embodiment, is also an embodiment of the present invention.

[0110] The disclosure of this specification includes the complement of the concepts described in this specification. In other words, if this specification states, for example, that "A is B" (A=B), then this specification is deemed to disclose or suggest that "A is not B" even if the statement that "A is not B" (A≠B) is omitted. This is because when "A is B," it is assumed that the case where "A is not B" is taken into consideration.

[0111] The disclosure of this specification includes the following configurations and methods. (Configuration 1) A substrate; a first light-emitting element disposed on the substrate; a second light-emitting element disposed on the substrate; a wiring layer disposed on the first light emitting element and the second light emitting element; and the first light-emitting element is configured to emit light when power is supplied from the wiring layer; The second light emitting element is configured so that power leading to light emission is not supplied to the second light emitting element from the wiring layer. A light emitting device characterized by: (Configuration 2) The wiring layer is not electrically connected to the second light-emitting element. 2. The light-emitting device according to claim 1. (Configuration 3) The second light emitting element further includes a first insulating film that insulates the wiring layer from the second light emitting element. 3. The light emitting device according to configuration 1 or 2. (Configuration 4) the wiring layer includes a first wiring arranged above a region in which the first light-emitting element is arranged and a second wiring arranged above a region in which the second light-emitting element is arranged; The first wiring and the second wiring are not electrically connected. 2. The light-emitting device according to claim 1. (Configuration 5) A ground potential is supplied to the second wiring. 5. The light-emitting device according to configuration 4. (Configuration 6) The second wiring is in a floating state. 5. The light-emitting device according to configuration 4. (Configuration 7) The second insulating film is formed to insulate a part of the first wiring from a part of the first light emitting element. 7. The light emitting device according to any one of configurations 4 to 6. (Configuration 8) In a plan view of the substrate, the second light emitting element is disposed between the first light emitting element and an end portion of the substrate. 8. The light emitting device according to any one of configurations 1 to 7. (Configuration 9) In a plan view of the substrate, a shape of an end of a portion of the wiring layer disposed above the first light-emitting element and a shape of an end of a portion of the wiring layer disposed above the second light-emitting element are different from each other. 9. The light emitting device according to any one of configurations 1 to 8. (Configuration 10) At least a part of the wiring layer has a lattice shape in a plan view of the substrate. 10. The light emitting device according to any one of configurations 1 to 9. (Configuration 11) The light emitting element further includes pads arranged to surround the first light emitting element and the second light emitting element in a plan view of the substrate. 11. The light emitting device according to any one of configurations 1 to 10. (Configuration 12) a plurality of the first light-emitting elements; The wiring layer is configured to be able to supply different potentials to the plurality of first light-emitting elements. 11. The light emitting device according to any one of configurations 1 to 10, comprising: (Configuration 13) Further, a control circuit for supplying power to the wiring layer is provided. 13. The light emitting device according to any one of configurations 1 to 12. (Configuration 14) a plurality of the second light-emitting elements; The patterns of the wiring layer on each of the plurality of second light-emitting elements are different from each other. 14. The light emitting device according to any one of configurations 1 to 13. (Configuration 15) Each of the first light emitting element and the second light emitting element includes a plurality of mesas. 15. The light emitting device according to any one of configurations 1 to 14. (Configuration 16) The semiconductor layer constituting the mesa included in the first light emitting element and the semiconductor layer constituting the mesa included in the second light emitting element have the same structure. 16. The light-emitting device according to claim 15. (Configuration 17) A portion of the wiring layer is disposed so as to cover the grooves between the plurality of mesas. 17. The light-emitting device according to configuration 15 or 16. (Configuration 18) The first light emitting element further includes a transparent conductive film that electrically connects the wiring layer and an upper surface of the mesa included in the first light emitting element. 18. The light-emitting device according to claim 17. (Configuration 19) When viewed from above with respect to the substrate, the mesa has a rectangular shape, In a plan view of the substrate, the wiring layer overlaps three sides of the mesa and the wiring layer does not overlap one side of the mesa. 19. The light-emitting device according to configuration 17 or 18. (Configuration 20) the first light emitting element and the second light emitting element each include a semiconductor layer in which an insulating region is formed, A portion of the wiring layer is disposed so as to cover the insulating region. 15. The light emitting device according to any one of configurations 1 to 14. (Method 21) A method for manufacturing a light-emitting device according to Configuration 20, comprising: The insulating region is formed by selectively implanting ions into a portion of the semiconductor layer. A method for manufacturing a light emitting device comprising the steps of: (Method 22) A method for manufacturing the light-emitting device according to any one of configurations 1 to 20, comprising: forming a resist on the substrate for patterning the wiring layer; forming the wiring layer by plating; A method for manufacturing a light emitting device, comprising: (Configuration 23) The light-emitting device according to any one of configurations 1 to 20, a light receiving device that receives light emitted from the light emitting device and reflected by the object to be measured; a distance information acquisition unit that acquires information about the distance to the measurement object based on the time difference between the timing at which light is emitted from the light emitting device and the timing at which light is received by the light receiving device; A distance measuring device comprising: (Configuration 24) A mobile object, a distance measuring device according to configuration 23; a control means for controlling the moving object based on information about the distance acquired by the distance measuring device; A moving object characterized by having:

[0112] The present invention can also be realized by supplying a program that realizes one or more functions of the above-described embodiments to a system or device via a network or a storage medium, and having one or more processors in the computer of the system or device read and execute the program. It can also be realized by a circuit (e.g., ASIC) that realizes one or more functions.

[0113] It should be noted that the above-described embodiments are merely examples of specific embodiments for carrying out the present invention, and the technical scope of the present invention should not be construed as being limited by these embodiments. In other words, the present invention can be carried out in various forms without departing from its technical concept or main features. [Explanation of symbols]

[0114] 10. Light-emitting device 111 Substrate 121, 122 wiring L1 First light-emitting element L2 Second light-emitting element

Claims

1. A substrate; a first light-emitting element disposed on the substrate; a second light-emitting element disposed on the substrate; a wiring layer disposed on the first light emitting element and the second light emitting element; and the first light-emitting element is configured to emit light when power is supplied from the wiring layer; The second light emitting element is configured so that power leading to light emission is not supplied to the second light emitting element from the wiring layer. A light emitting device characterized by:

2. The wiring layer is not electrically connected to the second light-emitting element.

2. The light emitting device according to claim 1.

3. The second light emitting element further includes a first insulating film that insulates the wiring layer from the second light emitting element.

2. The light emitting device according to claim 1.

4. the wiring layer includes a first wiring arranged above a region in which the first light-emitting element is arranged and a second wiring arranged above a region in which the second light-emitting element is arranged, The first wiring and the second wiring are not electrically connected.

2. The light emitting device according to claim 1.

5. A ground potential is supplied to the second wiring.

5. The light emitting device according to claim 4.

6. The second wiring is in a floating state.

5. The light emitting device according to claim 4.

7. a second insulating film that insulates a portion of the first wiring from a portion of the first light-emitting element; 5. The light emitting device according to claim 4.

8. In a plan view of the substrate, the second light-emitting element is disposed between the first light-emitting element and an end portion of the substrate.

2. The light emitting device according to claim 1.

9. In a plan view of the substrate, a shape of an end of a portion of the wiring layer disposed above the first light-emitting element and a shape of an end of a portion of the wiring layer disposed above the second light-emitting element are different from each other.

2. The light emitting device according to claim 1.

10. At least a part of the wiring layer has a lattice shape in a plan view of the substrate.

2. The light emitting device according to claim 1.

11. The light emitting element further includes pads arranged to surround the first light emitting element and the second light emitting element in a plan view of the substrate.

2. The light emitting device according to claim 1.

12. a plurality of the first light-emitting elements; The wiring layer is configured to be able to supply different potentials to the plurality of first light-emitting elements.

2. The light emitting device according to claim 1, further comprising:

13. Further, a control circuit for supplying power to the wiring layer is provided.

2. The light emitting device according to claim 1.

14. a plurality of the second light-emitting elements; The patterns of the wiring layer on each of the plurality of second light-emitting elements are different from each other.

2. The light emitting device according to claim 1.

15. Each of the first light emitting element and the second light emitting element includes a plurality of mesas.

2. The light emitting device according to claim 1.

16. The semiconductor layer constituting the mesa included in the first light emitting element and the semiconductor layer constituting the mesa included in the second light emitting element have the same structure.

16. The light emitting device according to claim 15.

17. A portion of the wiring layer is disposed so as to cover the grooves between the plurality of mesas.

16. The light emitting device according to claim 15.

18. The first light emitting element further includes a transparent conductive film that electrically connects the wiring layer and an upper surface of the mesa included in the first light emitting element.

18. The light emitting device according to claim 17.

19. When viewed from above with respect to the substrate, the mesa has a rectangular shape, In a plan view of the substrate, the wiring layer overlaps three sides of the mesa and the wiring layer does not overlap one side of the mesa.

18. The light emitting device according to claim 17.

20. the first light emitting element and the second light emitting element each include a semiconductor layer in which an insulating region is formed, A portion of the wiring layer is disposed so as to cover the insulating region.

2. The light emitting device according to claim 1.

21. A method for manufacturing a light emitting device according to claim 20, comprising: The insulating region is formed by selectively implanting ions into a portion of the semiconductor layer. A method for manufacturing a light emitting device comprising the steps of:

22. A method for manufacturing a light emitting device according to any one of claims 1 to 20, comprising the steps of: forming a resist on the substrate for patterning the wiring layer; forming the wiring layer by plating; A method for manufacturing a light emitting device, comprising:

23. A light emitting device according to any one of claims 1 to 20; a light receiving device that receives light emitted from the light emitting device and reflected by the object to be measured; a distance information acquisition unit that acquires information about the distance to the measurement object based on the time difference between the timing at which light is emitted from the light emitting device and the timing at which light is received by the light receiving device; A distance measuring device comprising:

24. A mobile object, a distance measuring device according to claim 23; a control means for controlling the moving object based on information about the distance acquired by the distance measuring device; A moving object characterized by having:

Images