Semiconductor manufacturing apparatus and semiconductor device manufacturing method

Abstract

To provide a technique capable of facilitating management of a wafer.SOLUTION: A semiconductor manufacturing apparatus includes a cassette mounting table on which a wafer cassette accommodating a wafer ring is mounted, a wafer holding table that holds the wafer ring, a head that picks up a die from a dicing tape to which a wafer attached to the wafer ring and divided into the die is attached, a UV irradiator, and a control device that is configured to irradiate the dicing tape with UV by the UV irradiator and can perform bidirectional communication of UV irradiation information associated with an ID of the wafer cassette with a host computer.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor manufacturing equipment and is applicable to, for example, a die bonder that picks up a die from a wafer to which an ultraviolet (UV) curable adhesive tape is attached. [Background technology]

[0002] One process in the manufacturing process of a semiconductor device is a peeling process in which the dies are peeled off from the dicing tape to which the wafer divided into dies is attached. In the peeling process, for example, the dies are pushed up from the backside of the dicing tape by a push-up unit, peeled off one by one from the dicing tape held by a wafer supply unit, and picked up using a suction nozzle such as a collet attached to a pickup head or bond head.

[0003] When a UV-curable adhesive tape is used as the dicing tape, in order to facilitate the pick-up operation, the dicing tape and the UV irradiation unit may be moved relative to each other prior to the peeling process, and a predetermined irradiation area of ​​the dicing tape may be irradiated with UV light to reduce the adhesive strength of the adhesive (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-199443 Summary of the Invention [Problem to be solved by the invention]

[0005] When wafers are replaced in a die bonder, there is a possibility that wafers that have already been UV-irradiated will be irradiated with UV again. As a result, the accumulated light intensity can cause the adhesive strength between the dicing tape and the die to decrease more than necessary, making the die more likely to peel off. In addition, unnecessary UV irradiation reduces the production capacity of the die bonder.

[0006] An object of the present disclosure is to provide a technology that can easily manage the UV irradiation performance of wafers. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings. [Means for solving the problem]

[0007] A brief summary of representative aspects of this disclosure is as follows. That is, the semiconductor manufacturing equipment includes a cassette mounting table on which a wafer cassette containing a wafer ring is placed, a wafer holding table that holds the wafer ring, a head that picks up the dies from a dicing tape to which a wafer that is attached to the wafer ring and divided into dies is attached, a UV irradiator, and a control device that is configured to irradiate UV onto the dicing tape using the UV irradiator and can communicate UV irradiation information linked to the ID of the wafer cassette in two-way communication with a host computer. [Effects of the Invention]

[0008] According to the present disclosure, it is possible to easily manage the UV irradiation results for wafers. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic top view showing an example of the configuration of a die bonder according to an embodiment. [Figure 2] FIG. 2 is a schematic front view of the vicinity of the pickup unit in the die bonder shown in FIG. [Figure 3] FIG. 3 is a schematic side view of the bonding section of the die bonder shown in FIG. [Figure 4] FIG. 4 is a schematic cross-sectional view showing the main part of the wafer holder shown in FIG. [Figure 5] FIG. 5 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in FIG. [Figure 6] FIG. 6 is a block diagram showing a schematic configuration of a control system of the die bonder shown in FIG. [Figure 7] FIG. 7 is a diagram showing the relationship between input and output information of a die bonder and a host computer in a UV irradiation management system. [Figure 8] FIG. 8 is a flowchart showing the relationship between the wafer processing steps and the communication between the die bonder and the host computer. [Figure 9] FIG. 9 is a conceptual diagram showing the relationship between the peeling force from the dicing tape and the integrated amount of UV irradiation. [Figure 10] FIG. 10 is a diagram showing an example of communication of UV irradiation information after the wafer carrying-in process. [Figure 11] FIG. 11 is a diagram showing an example of communication of UV irradiation information after the wafer unloading step. [Figure 12] FIG. 12 is a diagram showing an example of communication of additional UV irradiation information after the wafer is carried out in the first modified example. [Figure 13] FIG. 13 is a cross-sectional view of a wafer in which a tape that is sensitive to UV is attached to a dicing tape according to a second modification. [Figure 14] FIG. 14 is a schematic top view showing an example of the configuration of a die bonder in the second modified example. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments and modifications will be described with reference to the drawings. However, in the following description, the same components will be assigned the same reference numerals, and repeated description may be omitted. Note that, to clarify the description, the drawings may show the width, thickness, shape, etc. of each part more schematically than in the actual embodiment. Furthermore, the dimensional relationships and ratios of each element between multiple drawings do not necessarily match.

[0011] [Embodiment] The configuration of a die bonder, which is one embodiment of semiconductor manufacturing equipment, will be described with reference to Figures 1 to 4. Figure 1 is a schematic top view showing an example of the configuration of a die bonder in an embodiment. Figure 2 is a schematic front view of the vicinity of a pickup unit in the die bonder shown in Figure 1. Figure 3 is a schematic side view of a bonding unit in the die bonder shown in Figure 1. Figure 4 is a schematic cross-sectional view showing the main part of the wafer holder shown in Figure 1.

[0012] The first die bonder 1 broadly comprises a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a transport unit 50, a substrate supply unit 60, a substrate unloading unit 70, and a control unit (control device) 80. The Y2-Y1 direction is the front-to-rear direction of the first die bonder 1, the X2-X1 direction is the left-to-right direction, and the Z1-Z2 direction is the up-to-down direction. The wafer supply unit 10 is located on the front side of the first die bonder 1, and the bonding unit 40 is located on the rear side.

[0013] The wafer supply unit 10 has a wafer transport unit 11, a wafer holder 12, and a peeling unit 13. The wafer transport unit 11 is equipped with a wafer cassette lifter 111 as a cassette mounting table, a wafer correction chute 112, a wafer extractor 113, a UV irradiator 114, and a support table 115.

[0014] The wafer cassette lifter 111 moves the wafer cassette WC, which stores a plurality of wafer rings WR, up and down to the wafer transfer height. The wafer adjustment chute 112 is provided on a support table 115 and aligns the wafer rings WR supplied from the wafer cassette lifter 111.

[0015] Wafer extractor 113 removes wafer rings WR from wafer cassette WC and supplies them to wafer holder 12, or removes them from wafer holder 12 and stores them in wafer cassette WC. Wafer extractor 113 includes guide rails 113a, a movable part 113b that moves along guide rails 113a, an arm part 113c that extends from movable part 113b, and a gripper 113d provided at the tip of arm part 113c.

[0016] UV irradiator 114 is provided on support table 115 which is arranged between wafer cassette lifter 111 on which wafer cassette WC is placed and wafer holder 12.

[0017] 4, wafer holder 12 has an expand ring 121 that holds wafer ring WR, and a support ring 122 that is held by wafer ring WR and horizontally positions dicing tape DT. Peeling unit 13 is disposed inside support ring 122.

[0018] The wafer holder 12 is moved in the X1-X2 and Y1-Y2 directions by a drive unit (not shown), and moves the die D to be picked up to the position of the peeling unit 13. The wafer holder 12 also rotates the wafer ring WR in the XY plane by a drive unit (not shown). The peeling unit 13 is moved in the vertical direction by a drive unit (not shown). The peeling unit 13 peels the die D from the dicing tape DT, for example, by pushing up multiple blocks.

[0019] When the die D is peeled off, the wafer holder 12 lowers the expand ring 121 holding the wafer ring WR. As a result, the dicing tape DT held by the wafer ring WR is stretched, widening the gap between the dies D, and the peeling unit 13 pushes up the dies D from below, improving the pick-up ability of the dies D.

[0020] A wafer W is adhered (attached) onto a dicing tape DT, and the wafer W is divided into multiple dies D. The wafer W is, for example, a semiconductor wafer, and the dies D are semiconductor chips. The dicing tape DT is a UV-curable adhesive tape. A film-like adhesive material DF called a die attach film (DAF) is attached between the wafer W and the dicing tape DT. The adhesive material DF hardens when heated.

[0021] The pickup unit 20 has pickup heads 21A and 21B, X-drive units 23A and 23B, and a wafer recognition camera 24. The pickup heads 21A and 21B are provided with collets 22A and 22B that suction-hold the peeled die D at their tips. The pickup heads 21A and 21B pick up the die D from the wafer holder 12 and place it on the intermediate stages 31A and 31B. The X-drive units 23A and 23B move the pickup heads 21A and 21B in the X1-X2 directions. The pickup unit 20 has drive units (not shown) that raise and lower, rotate, and move the pickup heads 21A and 21B in the Y1-Y2 directions. The wafer recognition camera 24 determines the pickup position of the die D to be picked up from the wafer W and inspects the surface of the die D.

[0022] The intermediate stage unit 30 has intermediate stages 31A and 31B on which the die D is placed, and stage recognition cameras 34A and 34B for recognizing the die D on the intermediate stages 31A and 31B. The intermediate stages 31A and 31B have suction holes that adsorb the placed die D. The placed die D is temporarily held by the intermediate stages 31A and 31B. The intermediate stages 31A and 31B are not only placement stages on which the die D is placed, but also pickup stages on which the die D is picked up.

[0023] The bonding section 40 includes bond heads 41A and 41B, a Y-axis drive unit (not shown), substrate recognition cameras 44A and 44B, and bond stages 46A and 46B. The bond heads 41A and 41B are equipped with collets 42A and 42B that suction-hold the die D at their tips. The Y-axis drive unit (not shown) moves the bond heads 41A and 41B in the Y1-Y2 directions. The substrate recognition cameras 44A and 44B capture images of position recognition marks (not shown) on the substrate S to recognize the bond position. The substrate S has multiple product areas (hereinafter referred to as package areas P) that will ultimately become a single package. A position recognition mark is provided for each package area P. The bond stages 46A and 46B are raised when the die D is placed on the substrate S, supporting the substrate S from below. The bond stages 46A and 46B have suction ports (not shown) for vacuum-adsorbing the substrate S, and are capable of fixing the substrate S. The bond stages 46A and 46B have heating units (not shown) for heating the substrate S. The bonding unit 40 has drive units (not shown) for raising and lowering, rotating, and moving the bond heads 41A and 41B in the X direction.

[0024] With this configuration, the bond heads 41A and 41B correct their pickup positions and postures based on the imaging data of the stage recognition cameras 34A and 34B, and pick up the die D from the intermediate stages 31A and 31B. Then, the bond heads 41A and 41B bond the die D onto the package area P of the substrate S based on the imaging data of the substrate recognition cameras 44A and 44B, or bond the die D by stacking it on top of a die already bonded onto the package area P of the substrate S.

[0025] The transport unit 50 has a transport lane 52 along which the substrate S moves. The substrate S moves in the X1 direction by driving nuts of transport claws provided on the transport lane 52 with ball screws provided along the transport lane 52. With this configuration, the substrate S moves from the substrate supply unit 60 along the transport lane 52 to the bonding position, and after bonding, moves to the substrate unloading unit 70 and hands the substrate S over to the substrate unloading unit 70.

[0026] The substrate supply unit 60 removes the substrate S, which has been stored in a transport jig and carried in, from the transport jig and supplies it to the transport unit 50. The substrate unloading unit 70 stores the substrate S, which has been carried in by the transport unit 50, in the transport jig.

[0027] Next, the control unit 80 will be described with reference to Fig. 6. Fig. 6 is a block diagram showing a schematic configuration of a control system of the first die bonder 1 shown in Fig. 1.

[0028] The control system 8 includes a control unit (control device) 80, a drive unit 86, a signal unit 87, an optical system 88, etc. The control unit 80 broadly includes a control and arithmetic unit 81 mainly composed of a CPU (Central Processing Unit), a storage device 82, an input / output device 83, a bus line 84, and a power supply unit 85. The storage device 82 includes a main storage device 82a and an auxiliary storage device 82b. The main storage device 82a is composed of a RAM (Random Access Memory) that stores processing programs and the like. The auxiliary storage device 82b is composed of an HDD (Hard Disk Drive) or SSD (Solid State Drive) that stores control data, image data, etc. required for control.

[0029] The input / output device 83 includes a monitor 83a that displays the device status and other information, a touch panel 83b that inputs operator instructions, a mouse 83c that operates the monitor 83a, and an image capture device 83d that captures image data from the optical system 88. The input / output device 83 also includes a motor control device 83e and an I / O signal control device 83f. The motor control device 83e controls the wafer extractor 113 of the wafer supply unit 10, the ZY drive shaft of the bond head table, and the drive unit of the peeling unit 13. The I / O signal control device 83f captures signals from and controls the signal unit 87. The signal unit 87 includes various sensors, switches and volumes that control the brightness of lighting devices, a UV irradiator 114, and the like. The optical system 88 includes the wafer recognition camera 24, stage recognition cameras 34A and 34B, and substrate recognition cameras 44A and 44B. The control and calculation device 81 takes in necessary data via a bus line 84, performs calculations, controls the pickup heads 21A, 21B, etc., and sends information to the monitor 83a, etc.

[0030] Furthermore, the control unit 80 can communicate bidirectionally with the host computer 200 based on the ID of the wafer cassette WC, and this bidirectional communication can be used to build a system for managing UV irradiation. It is also possible to manage the ID of the wafer W, or a combination of the ID of the wafer cassette WC and the position of the slot in which the wafer W is stored.

[0031] 7 is a diagram showing the relationship between input and output information between a first die bonder and a host computer in a UV irradiation management system. This UV irradiation management system is composed of, for example, a wafer cassette lifter 111 of the first die bonder 1, a control unit 80, and a host computer 200.

[0032] The wafer cassette lifter 111 has a function (not shown) of reading the ID of the wafer cassette WC by a barcode or the like, and has a mechanism for bidirectionally communicating UV irradiation information of the ID of the wafer cassette WC with the host computer 200 via the control unit 80 of the first die bonder 1. As described above, the bidirectional communication with the host computer 200 may include UV irradiation information for each ID of a wafer W linked to the ID of the wafer cassette WC. Furthermore, UV irradiation information for each slot position indicating the slot position in the wafer cassette WC in which the wafer W is stored may also be included.

[0033] The host computer 200 has a function of storing UV irradiation information corresponding to the ID of the wafer cassette WC communicated from the control unit 80. When UV irradiation is performed by the UV irradiator 114 of the first die bonder 1, information indicating that UV irradiation has been completed is transmitted to the host computer 200 via the control unit 80 and registered in relation to the ID of the wafer cassette WC.

[0034] The host computer 200 checks the information already registered in the host computer 200 based on the ID of the wafer cassette WC transmitted from the control unit 80 of the first die bonder 1 .

[0035] At least one of the UV irradiation history, irradiation time, irradiation intensity, irradiation date and time, number of irradiations, or transport speed during irradiation registered in the host computer 200 is compared and confirmed, and the result is transmitted to the control unit 80. If the control unit 80 determines that additional UV irradiation is necessary, the irradiation conditions are determined, and UV irradiation is performed by the UV irradiator 114 of the first die bonder 1.

[0036] As described above, UV irradiation information of the ID of the wafer cassette WC is managed via the host computer 200. Although one first die bonder 1 is shown in Fig. 7, it is of course also possible to perform bidirectional communication with semiconductor manufacturing equipment, including between multiple die bonders, via the host computer 200.

[0037] Next, a part of the manufacturing process of a semiconductor device using the first die bonder 1 (a method for manufacturing a semiconductor device) will be described with reference to Figures 5, 8, and 9. Figure 5 is a flowchart showing a method for manufacturing a semiconductor device using the first die bonder shown in Figure 1. Figure 8 is a flowchart showing the relationship between the wafer processing process and communication between the first die bonder and a host computer. Figure 9 is a conceptual diagram showing the relationship between the peeling force of the die from the dicing tape and the integrated amount of UV irradiation light. In the following description, the operation of each part constituting the first die bonder 1 is controlled by a control unit 80.

[0038] (Wafer loading process: process S1) The wafer cassette WC containing the wafer ring WR is loaded into the wafer cassette lifter 111 (step S11). The wafer cassette lifter 111 raises the wafer cassette WC to a wafer transfer height. The wafer extractor 113 grips the wafer ring WR with the gripping portion 113d and removes it from the wafer cassette WC (step S12).

[0039] When a wafer cassette WC is loaded into this wafer cassette lifter 111, as described above, the ID of the wafer cassette WC is read using a barcode or the like, and the UV irradiation information linked to the ID of the wafer cassette WC registered in the host computer 200 is queried.

[0040] Next, based on the result of the inquiry, the control unit 80 determines the necessity of UV irradiation and its detailed conditions (step S70). As described above, this UV irradiation information is at least one of the UV irradiation history for the ID of the wafer cassette WC, irradiation time, irradiation intensity, irradiation date and time, number of irradiations, and transport speed during irradiation.

[0041] Based on this information, if the dicing tape DT of the wafer W has not been irradiated with UV, the UV irradiator 114 irradiates UV from below (the back side) of the dicing tape DT held on the wafer ring WR under specified initial conditions (step S13).

[0042] If UV irradiation has already been performed, the control unit 80 determines whether UV irradiation is unnecessary based on the UV irradiation information registered in the host computer 200, or whether UV irradiation needs to be performed again, taking into account the time elapsed since the previous UV irradiation, in order to ensure the optimal peeling force of the die D from the dicing tape DT. The irradiation conditions for this UV re-irradiation are determined taking into account at least one of the UV irradiation history, irradiation time, irradiation intensity, irradiation date and time, number of irradiations, or conveying speed during irradiation. This UV re-irradiation ensures the optimal cumulative amount of UV irradiation for peeling the die D from the dicing tape DT.

[0043] If UV irradiation is already performed by the first die bonder 1 or another manufacturing device of the present disclosure, but the host computer 200 of this embodiment does not manage UV irradiation information and UV irradiation is performed twice under the same conditions, the cumulative light amount increases. In this case, as shown in the relationship diagram of FIG. 9 between the peel force of the die D from the dicing tape DT and the cumulative light amount of UV irradiation, the peel force decreases and becomes smaller than the desired peel force indicated by dashed line A. In other words, excessive UV irradiation has the disadvantage of making the die D too easily peeled from the dicing tape DT. This is because the adhesive of the dicing tape DT undergoes a polymerization reaction and hardens due to UV irradiation, reducing its adhesive strength to the die D. Furthermore, performing double UV irradiation also leads to a decrease in the operating rate from the perspective of device operation. Managing UV irradiation based on the UV irradiation information from the host computer 200 as described above is effective in preventing such disadvantages.

[0044] The UV light source (not shown) in this embodiment has an irradiation intensity of 500 mW / cm at a wavelength of 365 nm, for example. 2 The light source is, for example, a UV light emitting diode.

[0045] Next, wafer extractor 113 supplies wafer ring WR to wafer holder 12 (step S14), after which wafer holder 12 is moved to the pickup position (step S15).

[0046] (Substrate loading process: Process S2) The transport jig storing the substrate S is supplied to the substrate supply section 60. In the substrate supply section 60, the substrate S stored in the transport jig is taken out of the transport jig. Then, the substrate S is supplied to the bonding section 40 via the transport section 50.

[0047] (Pickup process: process S3) After step S1, the wafer holder 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 24, and the die D is positioned and its surface inspected based on the image data acquired by the photograph. The image data is processed to calculate the amount of deviation (in the X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the first die bonder 1, and the die is positioned accordingly. Note that the die position reference point is previously held at a predetermined position on the wafer holder 12 as the initial setting for the device. The image data is processed to inspect the surface of the die D.

[0048] The positioned die D is peeled off from the dicing tape DT by the peeling unit 13 and the pickup heads 21A and 21B. The die D peeled off from the dicing tape DT is attracted to and held by collets 22A and 22B provided on the pickup heads 21A and 21B, respectively, and is transported to and placed on the intermediate stages 31A and 31B.

[0049] The stage recognition cameras 34A and 34B photograph the die D on the intermediate stages 31A and 31B, and positioning and surface inspection of the die D are performed based on the image data acquired by photographing. By image processing the image data, the amount of deviation (in the X, Y, and θ directions) of the die D on the intermediate stages 31A and 31B from the die position reference point of the first die bonder 1 is calculated, and positioning is performed. Note that the die position reference point is previously held at a predetermined position of the intermediate stages 31A and 31B as the initial setting of the device. By image processing the image data, surface inspection of the die D is performed.

[0050] After transporting the die D to the intermediate stages 31A and 31B, the pickup heads 21A and 21B are returned to the wafer holder 12. The next die D is peeled off from the dicing tape DT according to the procedure described above, and thereafter, the dies D are peeled off one by one from the dicing tape DT according to the same procedure.

[0051] (Bond process: Process S4) The substrate S is transported to the bond stages 46A, 46B by the transport unit 50. The substrate S placed on the bond stages 46A, 46B is imaged by the substrate recognition cameras 44A, 44B, and the positioning and surface inspection of the substrate S are performed based on the image data acquired by the image capture. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the substrate S from the substrate position reference point of the first die bonder 1. Note that the substrate position reference point is previously held at a predetermined position of the bonding unit 40 as the initial setting of the device. The image data is processed to perform surface inspection of the substrate S.

[0052] The suction positions of the bond heads 41A and 41B are corrected based on the deviation of the die D on the intermediate stages 31A and 31B calculated in step S3, and the die D is then suctioned by the collets 42A and 42B. The bond heads 41A and 41B, which have picked up the die D from the intermediate stages 31A and 31B, bond the die D to a predetermined location on the substrate S supported by the bond stages 46A and 46B. Here, the predetermined location on the substrate S is the package area P of the substrate S, or an area where an element is already mounted and an element is to be bonded in addition to that, or a bonding area for an element to be stacked and bonded. The die D bonded to the substrate S is photographed by the substrate recognition cameras 44A and 44B, and an inspection is performed based on the image data obtained by photographing to determine whether the die D has been bonded to the desired location.

[0053] After bonding the die D to the substrate S, the bond heads 41A and 41B are returned to the intermediate stages 31A and 31B. Following the procedure described above, the next die D is picked up from the intermediate stages 31A and 31B and bonded to the substrate S. This is repeated until a die D is bonded to all package areas P of the substrate S.

[0054] (Substrate unloading process: Process S5) The transfer section 50 transfers the substrate S with the die D bonded thereto from the bonding section 40 to the substrate transfer section 70. In the substrate transfer section 70, the substrate S is taken out and stored in a transfer jig, and then the substrate S is transferred out. The transfer jig storing the substrate S is transferred out of the first die bonder 1.

[0055] (Wafer unloading process: process S6) After all the dies D to be picked up in step S3 have been picked up, the wafer holder 12 is moved to the vicinity of the X1 side of the wafer correction chute 112 (step S61). The wafer extractor 113 grips the wafer ring WR with the gripper 113d and transfers it to the wafer cassette WC (step S62). Once all the wafer rings have been stored, the wafer cassette lifter 111 lowers the wafer cassette WC to the transfer height. Then, the wafer cassette WC is transferred from the wafer cassette lifter 111 (step S63).

[0056] After the wafer cassette WC is carried out, the control unit 80 outputs and stores information about the UV irradiation performed on the dicing tape DT of the wafer W to the host computer 200 as information linked to the ID of the wafer cassette WC (step S71).

[0057] This output of UV irradiation information to the host computer 200 is performed via the control unit 80 of the first die bonder 1, and therefore may be performed at any step after the UV irradiation described above, up to the wafer carry-out step. Furthermore, communication of the UV irradiation information to the host computer 200 is not limited to after the UV irradiation or wafer carry-out steps, and output of UV irradiation information to the host computer 200 is always possible after UV irradiation. In other words, it may be performed during any step for bonding the picked-up die D to the substrate S.

[0058] As described above, the die D is mounted on the substrate S and is carried out from the first die bonder 1. Thereafter, for example, a transport jig storing the substrate S on which the die D is mounted is transported to a wire bonding process, where the electrodes of the die D are electrically connected to the electrodes of the substrate S via Au wires or the like. Then, the substrate S is transported to a molding process, where the die D and the Au wires are sealed with molding resin (not shown), thereby completing a semiconductor package.

[0059] In the case of stack bonding, following the wire bonding process, a transport jig on which a substrate S on which a die D is mounted is loaded and stored is carried into the first die bonder 1, and the die D is stacked on top of the die D mounted on the substrate S. Then, after being carried out from the first die bonder 1, the die D is electrically connected to the electrodes of the substrate S via Au wires in a wire bonding process. The dies D from the second layer onwards are peeled from the dicing tape DT using the method described above, then transported to the bonding section and stacked on top of the die D. After the above process is repeated a predetermined number of times, the substrate S is transported to a molding process, and the multiple dies D and Au wires are sealed with molding resin (not shown) to complete a stacked package.

[0060] is. Next, an example of communication of UV irradiation information of the ID of the wafer cassette WC using the host computer 200 will be described. Fig. 10 shows an example of communication of UV irradiation information after the wafer carry-in process, and Fig. 11 shows an example of communication of UV irradiation information after the wafer carry-out process. It goes without saying that this can be applied to all wafers stored in the wafer cassette WC, regardless of the number of wafers shown in Figs. 10 and 11.

[0061] 10, after the wafer cassette WC is loaded (step S11), UV irradiation information for the wafers W in the wafer cassette WC is queried through two-way communication between the host computer 200 and the first die bonder 1 (step S70). First, through this two-way communication, the control unit 80 of the first die bonder 1 determines whether to irradiate with UV.

[0062] In the management by wafer cassette WC#01, UV irradiation conditions in the first die bonder 1 are determined for all stored wafers W. In Fig. 10, information about UV irradiation for wafer cassette WC#01 is communicated to the first die bonder 1 into which the wafer W has been loaded through a UV irradiation information inquiry with the host computer 200 (step S70). After that, UV irradiation is performed, the number of UV irradiations changes from 0 to 1, and the UV irradiation information is registered in the host computer 200 (step S71). By this inquiry and registration of UV irradiation information through bidirectional communication with the host computer 200, even if a newly loaded wafer cassette has already been irradiated with UV, excessive UV irradiation under the same conditions can be prevented, making it possible to suppress a decrease in the peeling force of the dicing tape DT.

[0063] Even when a wafer W from which a die D has already been picked up is to be used again in the same die bonder as the previous time, the wafer cassette WC is loaded again and the wafer processing process is started, as shown in the flowchart of Figure 8. At this time, the control unit 80 reads the ID of the wafer cassette WC and outputs this information to the host computer 200. Next, UV irradiation information for the ID of the wafer cassette WC is output from the host computer 200 to the control unit 80, and the control unit 80 determines appropriate UV irradiation conditions for the die D that have not yet been picked up, and UV irradiation is performed. Even in the case of the same die bonder, this series of repeated processes makes it possible to manage the UV irradiation results for each wafer cassette WC, and the peeling performance of the dicing tape DT for the wafer W can be maintained.

[0064] Furthermore, even if a wafer W from which a die has already been picked up is reused in a different die bonder, bidirectional communication with the host computer 200 allows the wafer processing process to be carried out under UV irradiation performance management, just as if it were being used in the same die bonder. In this case, the protocol for bidirectional communication between multiple die bonders and the host computer 200 is the same, and UV irradiation information for the wafer cassette WC ID is shared. Even if the manufacturing equipment or software on the network is different, communication and data exchange are possible by following a common protocol.

[0065] On the other hand, FIG. 11 shows an example in which the first die bonder 1 performs UV irradiation on wafer W IDs #B03 and #B04, which are linked to the ID of the wafer cassette WC, but not on #B01 and #B02. Regarding wafers UV-irradiated by the first die bonder 1, UV irradiation information is managed for each ID of the wafer W in the wafer cassette WC via the host computer 200. Therefore, the second die bonder 2 queries the UV irradiation information (step S70) and sets the settings so that UV irradiation is not performed on wafers W #B03 and #B04, but on wafers W IDs #B01 and #B02. After UV irradiation, the UV irradiation information is registered (step S71). In this way, the UV irradiation information is linked not only to the ID #02 of the wafer cassette WC but also to the IDs of the wafers W, so the control unit 90 of the second die bonder 2 can control the second die bonder 2 not to perform UV irradiation. Of course, it is also possible to reuse the first die bonder 1 in place of the second die bonder 2.

[0066] In this way, as shown in Fig. 11, UV irradiation information can also be managed for the IDs of wafers W linked to the IDs of wafer cassettes WC. In addition, UV irradiation information can also be managed for the positions of each slot that stores wafers W in the wafer cassette WC, as shown in Fig. 10. Unless the wafer cassette WC is changed, the positions of each slot are treated the same as the IDs of each wafer W. Therefore, it is of course possible to manage UV irradiation information for the positions of each slot linked to the IDs of the wafer cassette WC.

[0067] Furthermore, the control unit 80 can also display UV irradiation information of the ID of the wafer cassette WC on the monitor 83a of the device so that the operator can check it before, during, and after the work in the first die bonder 1. This monitor display allows the operator to check whether UV irradiation has been completed or not, and the UV irradiation conditions.

[0068] Furthermore, in this embodiment, the bidirectional communication of UV irradiation information between the control unit 80 of the first die bonder 1 and the host computer 200 has been described, but it is also possible to provide the host computer function using the control and calculation device 81 and the storage device 82, or to provide them as components of the first die bonder 1 and perform bidirectional communication directly with another die bonder. In this case, it is desirable that the die bonder with which communication is to be made also has a host computer function, but it is sufficient if at least one device in the device network has a host computer function.

[0069] According to this embodiment, excessive UV irradiation of the dicing tape DT of the wafer W can be suppressed, and the target peeling force can be maintained for each wafer W.

[0070] According to this embodiment, the die D and the dicing tape DT can maintain an appropriate peel force, which makes it possible to maintain and improve the pick-up performance of the die D. Furthermore, this improvement in pick-up performance leads to the prevention of a decline in the production capacity of the die bonder.

[0071] According to this embodiment, excessive use of the UV irradiator can be suppressed, and at least one of the irradiation conditions, i.e., irradiation time, irradiation intensity, number of irradiations, or conveying speed during irradiation, can be adjusted, which can also lead to improved durability of the UV irradiator and an extension of its lifespan.

[0072] <Modification> Below, several representative modified examples of the embodiment are given. In the following description of the modified examples, the same reference numerals as those in the above-described embodiment may be used for parts having the same configurations and functions as those described in the above-described embodiment. Furthermore, the description of such parts may be appropriately cited within the scope of not being technically inconsistent. Furthermore, a part of the above-described embodiment and all or part of the multiple modified examples may be appropriately applied in a composite manner within the scope of not being technically inconsistent.

[0073] (First Modification) In addition to the above-described embodiment, the die D pickup rate for each wafer W can also be output from the control unit 80 to the host computer 200 after the aforementioned wafer unloading process. The pickup rate here refers to the yield of the die D peeled from the dicing tape DT for each wafer cassette WC or each wafer W. If UV irradiation for the die D is insufficient, a pickup failure occurs, i.e., the die D is not completely peeled and remains on the dicing tape DT, reducing the yield. This pickup rate is shared by the host computer 200. Of course, the pickup rate can also be output to the host computer 200 after the pickup process and during the wafer unloading process. In this case, for example, the wafer recognition camera 24 or the like observes the pickup status and the control unit 80 calculates the pickup rate. As another example, the controller 80 calculates the pickup rate by measuring the air flow rate through the collet 22A or 22B when picking up the die D. This pickup process is affected by the peeling force of the dicing tape DT, as shown in FIG. 9 . The pickup rate is also required for the additional UV irradiation of the wafer W, as described below.

[0074] 12 shows an example of communication of additional UV irradiation information after wafer unloading in the first modified example. When the first die bonder 1 inquires about UV irradiation information to the host computer 200, the pick-up rate for each wafer W in the wafer cassette WC is also inquired at the same time. As a result, additional UV irradiation is performed on wafers W with low pick-up rates, and UV irradiation information registration is performed again (step S71).

[0075] For example, after the wafer cassette is loaded (step S11), the wafer cassette lifter 111 reads the ID of the wafer cassette WC. The first die bonder 1 then communicates bidirectionally with the host computer 200 via the control unit 80 to determine the pickup rate for each wafer W associated with the ID of the wafer cassette WC, and queries the already registered UV irradiation information and pickup rate (step S70). Before the wafer W is loaded into the wafer cassette WC, the control unit 80 calculates the pickup rate, for example, by observing the pickup status of the die D on the wafer support table 12 with the wafer recognition camera 24. The control unit 90 of the second die bonder 2, which is also bidirectionally communicating with the host computer 200, then determines whether additional UV irradiation is required for each wafer W based on the calculated pickup rate. If additional UV irradiation is required, the control unit 90 sets the additional UV irradiation conditions, and performs the additional UV irradiation process on the target wafer W. After the additional UV irradiation, the additional UV irradiation information is registered (step S71).

[0076] FIG. 12 shows a specific example of the pickup rate. The pickup rates for slot positions #S03 and #S04 at the first die bonder 1 are low, at 35% and 55%, respectively. Based on this information, the host computer 200 configures the second die bonder 2 to perform a second, additional UV irradiation, thereby improving the pickup rate to the same level as slot positions #S01 and #S02. Furthermore, for slot positions #S01 and #S02 of the same wafer cassette WC#03, the pickup rates for the first die bonder 1 are high, at 90% and 95%, respectively. Therefore, it is determined that additional UV irradiation is unnecessary at the second die bonder 2. The additional UV irradiation is determined based on information about the UV irradiation already performed by the first die bonder 1. Depending on the pickup rate, at least one of the irradiation time, irradiation intensity, number of irradiations, or transport speed during irradiation is adjusted by the control unit 90 of the second die bonder 2. Of course, it is also possible to perform additional UV irradiation using the first die bonder 1 instead of the second die bonder 2.

[0077] As mentioned above, the peel strength of the dicing tape DT depends on the UV irradiation conditions. Specifically, as in the embodiment, the additional conditions are determined by taking into consideration at least one of the irradiation history, irradiation time, irradiation intensity, irradiation date and time, irradiation count, and transfer speed during irradiation. By managing each wafer W ID based on the pickup results, these additional conditions can be set in detail, further improving yield.

[0078] In the die bonding process, die D with different electrical characteristics are classified into multiple grades, and wafers W may be reused with the same or different die bonders. Furthermore, wafers W may be reused even if the substrates S to be bonded are different. Managing wafers W by their IDs is effective when reusing wafers W in various ways, and the pickup results used can be used to determine whether additional UV irradiation is required.

[0079] Furthermore, the control unit 80 can display the pick-up result of the wafer W associated with the ID of the wafer cassette WC on the monitor 83a of the device so that the operator can check it before, during, and after the operation in the first die bonder 1. This monitor display allows the operator to determine whether additional UV irradiation is necessary. The monitor display of this pick-up result may be a wafer mapping showing which dies D have not been peeled, or it may be a display of the number of peeled or unpeeled dies relative to the total number, or the percentage of each, or any method that clearly indicates the yield.

[0080] (Second Modification) Next, in this second modified example, a method for determining UV irradiation of the dicing tape DT for each wafer W without using a host computer, that is, without using online two-way communication, will be described.

[0081] FIG. 13 is a cross-sectional view of a wafer in a second modified example in which a UV-sensitive tape is attached to the dicing tape. A UV-sensitive tape 301 (hereinafter referred to as a UV-reactive tape) is attached to the dicing tape DT on the backside of the wafer W before it is attached to the wafer ring WR. Of course, the UV-reactive tape can be attached to the dicing tape DT before UV irradiation or after the wafer ring WR is attached. After the wafer loading process, the wafer processing in the first die bonder 1 is the same as in the embodiment up to the wafer unloading process. Note that the UV-reactive tape 301 may be attached not only to the entire backside of the wafer W, but also to a portion of the backside area of ​​the wafer W that is irradiated with UV, either singly or in multiple pieces, and the shape is not limited. It is desirable for the shape and material of the UV-reactive tape 301 not to affect the operation of the peeling unit 13.

[0082] The UV reactive tape 301 used here is a tape that changes from colorless to colored when exposed to light including UV (hereinafter referred to as photosensitive), and once it changes color it will not return to colorless because it is irreversible.The tape has an adhesive on the backside, so it can be attached to the dicing tape DT.

[0083] As in the embodiment, once the wafer unloading process is completed, the wafer cassette WC is moved to the optical sensor 300 shown in FIG. 14. This optical sensor can determine the presence or absence of UV irradiation and the degree of exposure based on the photoexposure results of the UV reactive tape 301 attached to the dicing tape DT of the wafer W. As described above, dies D with different electrical characteristics may be classified into multiple grades, and wafers W may be reused with the same or a different die bonder, or even if the bonding substrate S is different. In such cases, the optical sensor 300 and the control unit 80 can determine which wafers W require additional UV irradiation based on the photoexposure results of the UV reactive tape 301. It is also possible to set the wafer cassette WC in the optical sensor 300 before the wafer loading process to determine whether UV irradiation has occurred in advance.

[0084] By making a judgment based on the photosensitivity result of this UV reactive tape 301, it is possible to prevent double UV irradiation, and at the same time, it is possible to prevent a decrease in the peeling force of the dicing tape DT from the wafer W.

[0085] Furthermore, this UV reactive tape 301 can change the photosensitivity of the seal surface, i.e., the degree of discoloration, depending on the intensity of UV irradiation from a UV light source (not shown). Therefore, it is possible not only to determine whether UV irradiation has been performed as described above, but also to determine the need for additional UV irradiation. For example, this can be determined by quantifying the degree of discoloration specified for the seal used or by creating a limit sample.

[0086] The photosensitivity result of the UV reactive tape 301 may be read by an optical sensor 300 or the like, and the measurement result may be displayed on the monitor 83a by the control unit 80 of the first die bonder 1. Of course, it goes without saying that the operator himself may directly visually confirm and judge the result.

[0087] Furthermore, the determination by this optical sensor may be performed using a stand-alone device independent of the first die bonder 1. In this case, the die bonder is transported by a dedicated transport device or manually by an operator.

[0088] As described above, these modifications also provide the same effects as the embodiment. The target peeling force can be maintained for each wafer W, and the die D pickup performance can be maintained and improved. This also leads to improved durability and an extended lifespan of the UV irradiator.

[0089] The disclosure made by the present inventors has been specifically described above based on embodiments and modified examples, but it goes without saying that the present disclosure is not limited to the above embodiments and modified examples, and various modifications are possible.

[0090] In the embodiment and the first modified example, an example was described in which the wafer cassette lifter 111 is provided with a function for reading the ID of the wafer cassette WC. This reading may be performed by any unit used before the UV irradiation step, such as a wafer cassette transfer device that supplies the wafer cassette WC to the wafer cassette lifter 111. Furthermore, reading can also be performed by a stand-alone device as long as the unit is capable of two-way communication with the host computer 200 and the control unit 80 of the first die bonder 1.

[0091] Although the light source of the UV irradiator 114 used in the embodiment is configured by a UV light emitting diode, a light source such as a metal halide or mercury may also be used.

[0092] Furthermore, although the UV irradiator 114 used in the embodiment has been described as being installed between the wafer cassette lifter 111 and the wafer holder 12, it is not limited to this and may be installed anywhere prior to the process of picking up the die D in the peeling unit 13.

[0093] Furthermore, even if the UV irradiator 114 is not installed in the first die bonder 1, if the first die bonder 1 and the UV irradiator 114 are configured to communicate bidirectionally via the host computer 200 regarding the above-mentioned UV irradiation information, UV irradiation performance management is possible as in the embodiment.

[0094] In the embodiment, an example in which a die attach film (DAF) is used has been described, but a preform portion for applying adhesive to the substrate may be provided, eliminating the need for a DAF.

[0095] In the embodiment, a die bonder 1 has been described in which the die D is picked up from the wafer supply unit 10 by the pickup heads 21A, 21B and placed on the intermediate stages 31A, 31B, and the die D placed on the intermediate stages 31A, 31B is bonded to the substrate S by the bond heads 41A, 41B. However, the present invention is not limited to this and can be applied to a die bonding apparatus that picks up a die from a die supply unit.

[0096] For example, the present invention can be applied to a die bonder that does not have an intermediate stage and a pickup head and that bonds a die from a wafer supply unit to a substrate with a bond head.

[0097] It is also applicable to a flip chip bonder that does not have an intermediate stage, picks up a die from a wafer supply unit, rotates the die pickup head upward to transfer the die to the bond head, and then bonds the die to a substrate with the bond head.

[0098] In the embodiment, an example in which two pickup units, two intermediate stages, and two bonding units are provided has been described, but this is not limiting, and there may be only one pickup unit, one intermediate stage, and one bonding unit.

[0099] In the embodiment, a die bonder has been described as an example, but the present invention can also be applied to semiconductor manufacturing equipment that places a picked-up die on a tray. [Explanation of symbols]

[0100] 111: Wafer cassette lifter (cassette mounting table) 114...UV irradiator 12 Wafer holder 21A, 21B Pickup head (head) 80... Control unit (control device)

Claims

1. a cassette mounting table on which a wafer cassette containing a wafer ring is mounted; a wafer holder that holds the wafer ring; a head for picking up the dies from a dicing tape to which the wafer, which is attached to the wafer ring and divided into dies, is attached; a UV irradiator; The UV irradiator is configured to irradiate the dicing tape with UV light, a control device configured to be able to bidirectionally communicate UV irradiation information linked to the ID of the wafer cassette with a host computer; A semiconductor manufacturing device comprising:

2. 2. The semiconductor manufacturing apparatus of claim 1, The control device is a semiconductor manufacturing device configured to be able to bidirectionally communicate with the host computer at least one of the UV irradiation information, irradiation history, irradiation time, irradiation intensity, irradiation date and time, irradiation count, and transfer speed during irradiation.

3. 3. The semiconductor manufacturing apparatus according to claim 2, The control device is a semiconductor manufacturing apparatus configured to determine whether or not irradiation by the UV irradiator is necessary based on at least one of the irradiation history, the irradiation time, the irradiation intensity, the irradiation date and time, the number of irradiations, or the transport speed during irradiation input from the host computer.

4. 4. The semiconductor manufacturing apparatus according to claim 3, The control device is a semiconductor manufacturing apparatus configured to set UV irradiation conditions for the UV irradiator and perform irradiation based on at least one of the irradiation history, the irradiation time, the irradiation intensity, the irradiation date and time, the number of irradiations, and the transport speed during irradiation input from the host computer.

5. 2. The semiconductor manufacturing apparatus of claim 1, The control device is configured to bidirectionally communicate with the host computer the UV irradiation information for the wafer cassette, the wafer, or a combination of the wafer cassette and a slot number of the wafer cassette.

6. 2. The semiconductor manufacturing apparatus of claim 1, The control device is configured to display the UV irradiation information of the UV irradiator on a monitor.

7. a cassette mounting table on which a wafer cassette containing a wafer ring is mounted; a wafer holder that holds the wafer ring; a head attached to the wafer ring and configured to pick up the dies from a dicing tape to which the wafer divided into dies is attached; a UV irradiator; The UV irradiator is configured to irradiate the dicing tape with UV light, a control device configured to be able to bidirectionally communicate with a host computer the pick-up result for the wafer; A semiconductor manufacturing device comprising:

8. 8. The semiconductor manufacturing apparatus according to claim 7, The control device is a semiconductor manufacturing apparatus configured to determine whether or not additional irradiation of the dicing tape by the UV irradiator for each wafer is necessary based on the wafer pick-up result input from the host computer.

9. 9. The semiconductor manufacturing apparatus according to claim 8, The control device is configured to set additional UV irradiation conditions and execute irradiation based on the pick-up results for each wafer input from the host computer.

10. 10. The semiconductor manufacturing apparatus of claim 9, The control device is configured to set at least one of the additional UV irradiation conditions from among irradiation time, irradiation intensity, number of irradiations, and transport speed during irradiation, based on the pickup result for each wafer input from the host computer.

11. 8. The semiconductor manufacturing apparatus according to claim 7, The control device is configured to display the pick-up result on a monitor.

12. 2. The semiconductor manufacturing apparatus of claim 1, The control device is a semiconductor manufacturing device configured so that the protocol and format used for two-way communication with the host computer matches the protocol and format used for two-way communication between the control device of another semiconductor manufacturing device and the host computer.

13. a cassette mounting table on which a wafer cassette containing a wafer ring is mounted; a wafer holder that holds the wafer ring; a head attached to the wafer ring and configured to pick up the dies from a dicing tape to which the wafer divided into dies is attached; a UV irradiator; a control device configured to irradiate the dicing tape with UV light by the UV irradiator; an optical sensor device that reads the photosensitive result of the UV reactive tape attached to the dicing tape; A semiconductor manufacturing device comprising:

14. 14. The semiconductor manufacturing apparatus of claim 13, The control device is configured to determine the irradiation history of the dicing tape based on the photosensitivity result of the UV reactive tape read by the optical sensor device, and to determine whether or not irradiation of the dicing tape is necessary.

15. 15. The semiconductor manufacturing apparatus of claim 14, The control device is configured to display on a monitor the photoexposure result of the UV reactive tape read by the optical sensor device.

16. A method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus including: a cassette mounting table on which a wafer cassette containing a wafer ring is mounted; a wafer holder table that holds the wafer ring; a head that picks up a wafer divided into dies from a dicing tape to which the wafer divided into dies is attached, the wafer ring being mounted on the wafer ring; and a UV irradiator, bidirectionally communicating UV irradiation information for the wafer with a host computer; picking up the dies from the dicing tape to which the wafer divided into the dies is attached; A method for manufacturing a semiconductor device comprising:

17. A method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus including: a cassette mounting table on which a wafer cassette containing a wafer ring is mounted; a wafer holder table that holds the wafer ring; a head that picks up a wafer divided into dies from a dicing tape to which the wafer divided into dies is attached, the wafer ring being mounted on the wafer ring; and a UV irradiator, a step of reading the photosensitive result of the UV reactive tape attached to the dicing tape; picking up the dies from the dicing tape to which the wafer divided into the dies is attached; A method for manufacturing a semiconductor device comprising:

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