Vanadium precursor compound for thin film deposition and method for forming vanadium-containing thin film using same

Abstract

To provide a vanadium precursor compound which has excellent thermal stability and a high vapor pressure and is advantageous in a vapor deposition process, and a method for forming a vanadium-containing thin film using the same.SOLUTION: A vanadium precursor compound represented by Formula 1 or Formula 2 is provided. Wherein, in Chemical Formula 1, R1 to R4 are independently selected from hydrogen, a linear alkyl group having 1 to 6 carbon atoms, and a branched alkyl group having 3 to 4 carbon atoms, and in Chemical Formula 2, n is an integer of 0 to 4, a ring including a vanadium element is a heterocycloalkyl group or a heterocycloalkene group, and R1 to R6 are independently selected from hydrogen, a linear alkyl group having 1 to 6 carbon atoms, and a branched alkyl group having 3 to 6 carbon atoms. ) SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a vanadium precursor compound and a method for forming a vanadium-containing thin film using the same, and more particularly to a vanadium precursor compound that has excellent thermal stability and a high vapor pressure, which is advantageous in a deposition process, and a method for forming a vanadium-containing thin film using the same. [Background technology]

[0002] With the development of electronic technology, there has been a rapid increase in the demand for miniaturization and weight reduction of electronic elements used in various electronic devices. Various physical and chemical vapor deposition methods have been proposed to form miniaturized electronic elements, and various researches are underway to manufacture various electronic elements, such as metal thin films, metal oxide thin films, and metal nitride thin films, using such deposition methods.

[0003] In the manufacture of semiconductor devices, thin films containing Group 5 metal compounds are generally formed using metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD) processes.

[0004] Compared to the MOCVD deposition process, the ALD deposition process has the advantage of having excellent step coverage due to a self-limiting reaction, and being a relatively low-temperature process, it can prevent degradation of device characteristics due to thermal diffusion.

[0005] In order to deposit thin films containing vanadium (V) among the group 5 metal compounds, it is very important to select a precursor compound suitable for the deposition process. Currently, there are various types of vanadium precursor compounds in the semiconductor industry.

[0006] However, conventional vanadium precursor compounds have poor thermal stability, and vanadium-containing thin films formed using these compounds by deposition processes have a problem of high impurity content, making it difficult to form vanadium-containing thin films required for next-generation semiconductor devices. Summary of the Invention [Problem to be solved by the invention]

[0007] An object of the present invention is to provide a vanadium precursor compound that is suitable for thin film growth, has robust thermal stability, and exists in a liquid state at room temperature while having a high vapor pressure, thereby eliminating the process problems associated with the use of conventional precursor compounds.

[0008] Another object of the present invention is to provide a vanadium precursor compound for thin film deposition, which can provide a high-quality uniform thin film with a low content of impurities such as carbon using the vanadium precursor compound.

[0009] The objects of the present invention are not limited to those mentioned above, and other objects not mentioned above will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0010] One embodiment of the present invention provides a vanadium precursor compound represented by Formula 1 or Formula 2.

[0011] [ka]

[0012] (In Chemical Formula 1, R1, R2, R3, and R4 are each independently selected from hydrogen, a linear alkyl group having 1 to 6 carbon atoms, and a branched alkyl group having 3 to 4 carbon atoms; in Chemical Formula 2, n is an integer from 0 to 4, the ring containing the vanadium element is a heterocycloalkyl group or a heterocycloalkene group; and R1, R2, R3, R4, R5, and R6 are each independently selected from hydrogen, a linear alkyl group having 1 to 6 carbon atoms, and a branched alkyl group having 3 to 6 carbon atoms.) Another embodiment of the present invention provides a method for forming a vanadium-containing thin film, which comprises depositing a thin film on a substrate through a metal organic chemical vapor deposition (MOCVD) process or an atomic layer deposition (ALD) process using the vanadium precursor compound.

[0013] Further details of the embodiments are included in the detailed description and drawings. [Effects of the Invention]

[0014] The vanadium precursor compound according to an embodiment of the present invention includes a cyclopentadiene ligand substituted with an alkyl group, and exists in a liquid state at room temperature. The vanadium precursor compound has a high vapor pressure, which is advantageous for a deposition process. In particular, the vanadium precursor compound according to an embodiment of the present invention has an asymmetric alkyl group substitution, which results in a high vapor pressure and excellent thermal stability.

[0015] Furthermore, the vanadium thin film formed by depositing the vanadium precursor compound according to an embodiment of the present invention has advantages of low content of impurities such as carbon, uniform physical properties and thickness.

[0016] The effects of the present invention are not limited to the above-mentioned examples, and various other effects are included within the scope of the present invention. [Brief explanation of the drawings]

[0017] [Figure 1]2 is a graph showing the results of thermogravimetric analysis (TGA) of the vanadium precursor compound according to Example 1. [Figure 2] 4 is a graph showing the results of thermogravimetric analysis (TGA) of the vanadium precursor compound according to Example 2. [Figure 3] 4 is a graph showing the results of thermogravimetric analysis (TGA) of the vanadium precursor compound according to Example 3. [Figure 4] 1 is a graph showing the results of thermogravimetric analysis (TGA) of a vanadium precursor compound according to Comparative Example 1. [Figure 5] 1 is a graph showing the results of differential scanning calorimetry (DSC) of the vanadium precursor compound according to Example 1. [Figure 6] 4 is a graph showing the results of differential scanning calorimetry (DSC) of the vanadium precursor compound according to Example 2. [Figure 7] 4 is a graph showing the results of differential scanning calorimetry (DSC) of the vanadium precursor compound according to Example 3. [Figure 8] 1 is a graph showing the results of differential scanning calorimetry (DSC) of the vanadium precursor compound according to Comparative Example 2. DETAILED DESCRIPTION OF THE INVENTION

[0018] The advantages and features of the present invention, and methods for achieving them, will become more apparent from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and may be embodied in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully convey the scope of the invention to those skilled in the art. The present invention is defined only by the scope of the claims.

[0019] In describing the present invention, if it is determined that a specific description of related publicly known technology may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. When words such as "comprise," "have," and "be made" are used in the present invention, other parts may be added as long as "only" is not used. When elements are expressed in the singular, the plural is also included unless otherwise explicitly stated.

[0020] When interpreting elements, they are interpreted as including a margin of error even if there is no other explicit description. Throughout this specification, the term "room temperature" means a temperature of 15°C to 30°C, or 20°C to 27°C.

[0021] The vanadium precursor compound according to one embodiment of the present application can be represented by Chemical Formula 1 or Chemical Formula 2. First, Chemical formula 1 will be explained.

[0022] [ka]

[0023] In Chemical Formula 1, R1, R2, R3, and R4 can each independently be selected from hydrogen, a linear alkyl group having 1 to 6 carbon atoms, and a branched alkyl group having 3 to 4 carbon atoms. Vanadocene (or bis(cyclopentadienyl)vanadium), in which vanadium is sandwiched between two cyclopentadienyl groups, is a reactive molecule with low stability, low vapor pressure, and the tendency to solidify at room temperature. This makes it difficult to use vanadocene compounds in the deposition process for forming vanadium-containing thin films.

[0024] In one embodiment of the vanadium precursor compound of the present application, each of the two cyclopentadienyl groups has two alkyl substituents, so it has a high vapor pressure and can exist as a liquid at room temperature.

[0025] For example, in Chemical Formula 1, R1 and R2 may be different from each other, and R3 and R4 may be different from each other. Such compounds contain asymmetrically substituted cyclopentadienyl groups, which have excellent thermal stability, exist in a liquid state at room temperature, and have high vapor pressure. Therefore, the vanadium precursor compound represented by Chemical Formula 1 according to one embodiment of the present application is advantageously used in a deposition process. In addition, it can form vanadium-containing thin films with high reproducibility.

[0026] For example, in Chemical Formula 1, at least one of R1 and R2 may be selected from a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 4 carbon atoms, and at least one of R3 and R4 may be selected from a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 4 carbon atoms.

[0027] Specifically, the vanadium precursor compound can be represented by the following formula 3 or 4.

[0028] [ka]

[0029] Such vanadium precursor compounds have a structure including two cyclopentadienyl groups, each having two alkyl substituents, and each containing cyclopentadienyl groups substituted with two alkyl substituents in an asymmetrical structure, and therefore have excellent thermal stability, exist in a liquid state at room temperature, and have a high vapor pressure. The use of such vanadium precursor compounds facilitates the deposition process, and the vanadium-containing thin film formed by the deposition process has high-quality properties, including reduced impurity content and uniform physical properties.

[0030] According to another embodiment of the present invention, the vanadium precursor compound may be represented by the following formula 2:

[0031] [ka]

[0032] The vanadium precursor compound represented by Chemical Formula 2, compared to the vanadium precursor compound represented by Chemical Formula 1, further contains a ligand having a ring structure formed by including vanadium element. In Chemical Formula 2, n may be an integer of 0 to 4. That is, the ring formed by containing the vanadium element may be a heterocycloalkyl group or heterocycloalkene group having 2 to 6 carbon atoms.

[0033] In this case, the heterocycloalkyl group or heterocycloalkene group may be further substituted with R5 and R6. In Chemical Formula 2, R1, R2, R3, R4, R5, and R6 can each independently be selected from hydrogen, a linear alkyl group having 1 to 6 carbon atoms, and a branched alkyl group having 3 to 6 carbon atoms.

[0034] For example, in Chemical Formula 2, R1 and R2 may be different from each other, and R3 and R4 may be different from each other. In this case, as described above, the vanadium precursor compound contains an asymmetrically substituted cyclopentadienyl group, which has the advantages of excellent thermal stability, existing in a liquid state at room temperature, and having a high vapor pressure. Therefore, the vanadium precursor compound represented by Chemical Formula 2 according to one embodiment of the present application is advantageously used in a deposition process. Furthermore, it can form a vanadium-containing thin film with high reproducibility.

[0035] For example, R5 and R6 may be different from each other in Chemical Formula 2. In this case, the substituent bonded to the heterocycloalkyl group or heterocycloalkene group containing a vanadium atom has an asymmetric structure, which may further improve thermal stability.

[0036] In Chemical Formula 2, at least one of R1 and R2 is selected from a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 4 carbon atoms, at least one of R3 and R4 is selected from a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 4 carbon atoms, and R5 and R6 can be selected from a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 4 carbon atoms.

[0037] In Chemical Formula 2, the ring containing the vanadium element may be a heterocycloalkene group containing one or more double bonds, which may provide the precursor compound with better stability and facilitate the deposition process.

[0038] Specifically, for example, the vanadium precursor compound can be represented by the following formula 5.

[0039] [ka]

[0040] Such vanadium precursor compounds have the advantages of being excellent in thermal stability, existing in a liquid state at room temperature, and having a high vapor pressure, since they contain cyclopentadienyl groups substituted in an asymmetric structure. In addition, when such a vanadium precursor compound is used, the deposition process is easy, and the vanadium-containing thin film formed by the deposition process has high quality characteristics with reduced impurity content and uniform physical properties.

[0041] The vanadium precursor compound represented by Chemical Formula 1 or Chemical Formula 2 according to the embodiment of the present invention exists in a liquid state at room temperature, making it easy to store and handle, and can be advantageously applied to form a thin film using a deposition process.

[0042] Therefore, the compound according to an embodiment of the present invention can be advantageously used as a precursor for producing a vanadium-containing thin film through an MOCVD deposition process or an ALD deposition process. Therefore, the compound represented by Chemical Formula 1 or Chemical Formula 2 can be used as a precursor composition for vapor deposition of a vanadium-containing thin film.

[0043] A method for forming a vanadium-containing thin film according to an embodiment of the present invention will be described in detail below. The method for forming a vanadium-containing thin film uses the vanadium precursor compound described above, and redundant description related to the vanadium precursor compound will be omitted.

[0044] In a method for forming a vanadium-containing thin film according to an embodiment of the present invention, a vanadium precursor compound represented by Chemical Formula 1 or Chemical Formula 2 is used to deposit a thin film on a substrate through a deposition process. The deposition process can be performed by an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process, such as a metalorganic chemical vapor deposition (MOCVD) process.

[0045] For example, the deposition process may be carried out at a temperature of 50° C. to 700° C. Within this range, the stability of the compound does not decrease, and a thin film with uniform physical properties can be formed. The vapor deposition step will be specifically described below.

[0046] First, a vanadium precursor compound represented by Chemical Formula 1 or Chemical Formula 2 is transferred onto a substrate. For example, the vanadium precursor compound can be supplied onto the substrate by a bubbling method, a vapor phase mass flow controller method, a direct gas injection (DGI) method, a direct liquid injection (DLI) method, a liquid transfer method in which the compound is dissolved in an organic solvent and transferred, or the like, but is not limited thereto.

[0047] If desired, the vanadium precursor compound may be supplied with a carrier gas or a diluent gas. The carrier gas is non-reactive with the vanadium precursor compound and is lighter than the vanadium precursor compound, so that the vaporized vanadium precursor compound can be easily transported to the reaction chamber.

[0048] The dilution gas is non-reactive with the vanadium precursor compound and does not induce side reactions, and controlling the flow rate of the dilution gas makes it easy to control the reaction, such as the growth rate of the thin film. For example, the carrier gas and the dilution gas may each be one or more selected from argon (Ar), nitrogen (N), helium (He), and hydrogen (H).

[0049] For example, the vanadium precursor compound may be mixed with a carrier gas or diluent gas, including one or more selected from argon (Ar), nitrogen (N), helium (He), and hydrogen (H), and transported onto the substrate by bubbling or direct gas injection.

[0050] In the deposition process for forming the vanadium-containing thin film, a reactive gas can be supplied as needed. The reactive gas can be supplied in the step of depositing the thin film. For example, the reactive gas may be one or more selected from the group consisting of water vapor (H2O), oxygen (O2), ozone (O3), and oxygen-containing gases such as hydrogen peroxide (H2O2).

[0051] As another example, the reactive gas may be one or more selected from ammonia (NH3), hydrazine (N2H4), nitrous oxide (N2O), and nitrogen-containing gases such as nitrogen (N2).

[0052] After the vanadium precursor compound is provided on the substrate, the vanadium-containing thin film is formed by a chemical reaction when energy such as thermal energy, plasma, or electrical bias is applied. Once a thin film of the desired thickness has been formed, the process may include purging the reaction chamber with an inert gas such as argon (Ar), nitrogen (N), helium (He) and / or hydrogen (H) to remove any remaining unreacted precursor compounds, reactant gases, etc.

[0053] The vanadium-containing thin film manufactured by the method for forming a thin film according to an embodiment of the present invention can provide a high-quality thin film by effectively reducing the amount of impurities such as carbon. The vanadium precursor compound according to the present invention will be described in more detail below through the following examples, which are provided merely to aid in understanding the present invention and are not intended to limit the scope of the present invention.

[0054] [Example 1] A flame-dried 1000mL Schlenk flask was charged with 20.0g (0.127mol, 1 equivalent) of vanadium trichloride VCl3 and 500mL of tetrahydrofuran, and the mixture was refluxed at 70°C for 12 hours. Then, 19.5g (0.299mol, 2.35 equivalents) of zinc powder was added and stirred at room temperature for 12 hours. The solvent was then removed under reduced pressure. 300mL of dichloromethane was then added and stirred for 1 hour. After filtering to separate the material dissolved in the dichloromethane, the solvent was removed under reduced pressure to obtain a green solid compound represented by [V2(Cl)3(THF)6]2[Zn2Cl6]. The green solid was then dissolved in 400 ml of THF solvent, and 200 ml of a solution of 0.267 mol (2.1 equivalents) of NaMeCp (sodium methylcyclopentadienide) in THF was added dropwise at -20°C or below, and the reaction solution was refluxed at 70°C for 12 hours. The solvent was then removed under reduced pressure, and the residue was distilled under reduced pressure to obtain 7.5 g of a purple liquid compound, (MeCp)2V (chemical formula 3).

[0055] [ka]

[0056] [Example 2] A flame-dried 1000mL Schlenk flask was charged with 20.0g (0.127mol, 1 equivalent) of vanadium trichloride VCl3 and 500mL of tetrahydrofuran, and the mixture was refluxed at 70°C for 12 hours. Then, 19.5g (0.299mol, 2.35 equivalents) of zinc powder was added and stirred at room temperature for 12 hours. The solvent was then removed under reduced pressure. 300mL of dichloromethane was then added and stirred for 1 hour. After filtering to separate the material dissolved in the dichloromethane, the solvent was removed under reduced pressure to obtain a green solid compound represented by [V2(Cl)3(THF)6]2[Zn2Cl6]. The green solid was then completely dissolved in 400 ml of THF solvent, and 200 ml of a solution of 0.267 mol (2.1 equivalents) of LiEtMeCp (lithium ethyl methyl cyclopentadienide) dissolved in THF was added dropwise at temperatures below -20°C, and the reaction solution was refluxed at 70°C for 12 hours. The solvent was then removed under reduced pressure, and the resulting mixture was distilled under reduced pressure to obtain 8.8 g of a purple liquid compound, (EtMeCp)2V (Chemical Formula 4).

[0057] [ka]

[0058] [Example 3] In a flame-dried 500 mL Schlenk flask, 20.0 g (0.127 mol) of (MeCp)2V and 200 mL of toluene were added and stirred for 1 hour. 6.6 g (0.127 mol) of 2-pentyne was then added dropwise and stirred for 12 hours. The solvent was then removed under reduced pressure, and the mixture was distilled under reduced pressure to obtain 9.2 g of a purple liquid compound, (MeCp)2V (2-pentyne), of formula 5.

[0059] [ka]

[0060] [Comparative Example 1] A flame-dried 1000mL Schlenk flask was charged with 20.0g (0.127mol, 1 equivalent) of vanadium trichloride VCl3 and 500mL of tetrahydrofuran, and the mixture was refluxed at 70°C for 12 hours. Then, 19.5g (0.299mol, 2.35 equivalents) of zinc powder was added and stirred at room temperature for 12 hours. The solvent was then removed under reduced pressure. 300mL of dichloromethane was then added and stirred for 1 hour. After filtering to separate the material dissolved in the dichloromethane, the solvent was removed under reduced pressure to obtain a green solid compound represented by [V2(Cl)3(THF)6]2[Zn2Cl6]. The green solid was then dissolved in 400 ml of THF solvent, and 200 ml of a solution of 0.267 mol (2.1 equivalents) of NaCp dissolved in THF was added dropwise at -20° C. or below, and the reaction solution was refluxed at 70° C. for 12 hours. The solvent was then removed under reduced pressure, and the residue was purified by sublimation under reduced pressure to obtain 5.5 g of a purple solid compound, Cp2V (Chemical Formula 6).

[0061] [ka]

[0062] [Experimental Example] 1.Thermogravimetric analysis (TGA) Thermogravimetric analysis (TGA) was performed to examine the thermal properties of the compounds according to Examples 1, 2, 3, and Comparative Example 1. First, the thermogravimetric analysis equipment was stored in a nitrogen glove box, where the moisture and oxygen contents were maintained at less than 1 ppm. Then, 10 mg of a sample was placed in a crucible and measured while the temperature was increased from 30°C to 400°C at a rate of 10°C / min. The mass loss of the sample was monitored as a function of the crucible temperature. The results are shown in Figures 1 to 4 and Table 1. Figure 1 is a graph showing the results of thermogravimetric analysis (TGA) of the vanadium precursor compound according to Example 1. Figure 2 is a graph showing the results of thermogravimetric analysis (TGA) of the vanadium precursor compound according to Example 2. Figure 3 is a graph showing the results of thermogravimetric analysis (TGA) of the vanadium precursor compound according to Example 3. Figure 4 is a graph showing the results of thermogravimetric analysis (TGA) of the vanadium precursor compound according to Comparative Example 1.

[0063] 2. Differential scanning calorimetry (DSC) Differential scanning calorimetry (DSC) was performed using a differential scanning calorimeter, with the temperature rising from 30°C to 400°C at a rate of 10°C / min. The results are shown in Figures 5 to 8 and Table 1. Figure 5 is a graph showing the DSC results of the vanadium precursor compound according to Example 1, Figure 6 is a graph showing the DSC results of the vanadium precursor compound according to Example 2, Figure 7 is a graph showing the DSC results of the vanadium precursor compound according to Example 3, and Figure 8 is a graph showing the DSC results of the vanadium precursor compound according to Comparative Example 2.

[0064] 3. Room temperature The state of each compound at room temperature was visually inspected and is shown in Table 1 below. Table 1

[0065] [Table 1]

[0066] 1 to 8, it can be seen that the vanadium precursor compounds of Examples 1 to 3 exist in a liquid state at room temperature and have thermal decomposition temperatures at least 50° C. higher than that of Comparative Example 1. This shows that the vanadium precursor compounds of Examples 1 to 3 have excellent thermal stability and exist in a liquid state at room temperature, which may facilitate the supply of reactants and reaction control during the deposition process.

[0067] The compound of Comparative Example 1 has a melting point of approximately 160°C, and therefore a higher vapor pressure due to phase change than those of Examples 1 and 2. However, because it exists as a crystalline solid at room temperature, it is difficult to supply reactants during deposition processes such as MOCVD and ALD, and its thermal decomposition temperature is very low at 359°C. Therefore, it is expected that the vanadium thin film formed by depositing the compound of Comparative Example 1 will have inhomogeneous physical properties and a high impurity content.

[0068] The compounds of Examples 1 to 3 contain cyclopentadiene ligands substituted with asymmetric structures, and in these cases, they have low melting points and exist in liquid form at room temperature, unlike Comparative Example 1, which is in a solid state.

[0069] On the other hand, when comparing the results of Examples 1 to 3, it can be seen that the compound of Example 3 is liquid at room temperature, has the highest vapor pressure, and is excellent in thermal stability. In addition, comparing Example 1 and Example 2, Example 2, which has two substituents bonded to cyclopentadiene, has a weaker bonding strength between the vanadium element and the ligand compound than Example 1, which has one substituent bonded to cyclopentadiene. Therefore, the compound of Example 2 can contribute to reducing the content of unnecessary impurities during thin film formation.

[0070] The vanadium precursor compounds and methods for forming vanadium-containing thin films according to various embodiments of the present invention can be described as follows. The vanadium precursor compound according to one embodiment of the present invention is represented by Chemical Formula 1 or Chemical Formula 2 below.

[0071] [ka]

[0072] (In Chemical Formula 1, R1, R2, R3, and R4 are each independently selected from hydrogen, a linear alkyl group having 1 to 6 carbon atoms, and a branched alkyl group having 3 to 4 carbon atoms; in Chemical Formula 2, n is an integer from 0 to 4, the ring containing the vanadium element is a heterocycloalkyl group or a heterocycloalkene group; and R1, R2, R3, R4, R5, and R6 are each independently selected from hydrogen, a linear alkyl group having 1 to 6 carbon atoms, and a branched alkyl group having 3 to 6 carbon atoms.) According to another feature of the present invention, in Formula 1, R1 and R2 may be different from each other, and R3 and R4 may be different from each other.

[0073] According to another feature of the present invention, in Chemical Formula 1, at least one of R1 and R2 may be selected from a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 4 carbon atoms, and in Chemical Formula 1, at least one of R3 and R4 may be selected from a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 4 carbon atoms.

[0074] According to another feature of the present invention, the vanadium precursor compound may be a compound represented by the following formula 3 or 4:

[0075] [ka]

[0076] According to another feature of the present invention, in Formula 2, R1 and R2 may be different from each other, R3 and R4 may be different from each other, and R5 and R6 may be different from each other. According to another feature of the present invention, in Chemical Formula 2, at least one of R1 and R2 may be selected from a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 4 carbon atoms; in Chemical Formula 2, at least one of R3 and R4 may be selected from a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 4 carbon atoms; and in Chemical Formula 2, R5 and R6 may be selected from a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 4 carbon atoms.

[0077] According to another feature of the present invention, the ring containing the vanadium atom in Formula 2 may be a heterocycloalkene group containing one or more double bonds. According to another aspect of the present invention, the vanadium precursor compound can be represented by the following formula:

[0078] [ka]

[0079] According to another feature of the present invention, the vanadium precursor compound may be liquid at room temperature. A method for forming a vanadium-containing thin film according to an embodiment of the present invention includes depositing a thin film on a substrate through a metal organic chemical vapor deposition (MOCVD) process or an atomic layer deposition (ALD) process using a vanadium precursor compound.

[0080] According to another feature of the present invention, the deposition process may be carried out at a temperature ranging from 50°C to 700°C. According to another aspect of the present invention, the deposition process may include transferring a vanadium precursor compound to the substrate through one selected from a bubbling method, a vapor phase mass flow controller (MFC) method, a direct gas injection (DGI) method, a direct liquid injection (DLI) method, and an organic solution supply method in which the vanadium precursor compound is dissolved in an organic solvent and transferred.

[0081] According to another aspect of the present invention, the vanadium precursor compound is transported onto the substrate by the bubbling method, direct gas injection method, or direct liquid injection method together with a carrier gas, and the carrier gas may include one or more selected from argon (Ar), nitrogen (N), helium (He), and hydrogen (H).

[0082] According to another aspect of the present invention, the deposition process may include supplying one or more reactive gases selected from water vapor (H2O), oxygen (O2), ozone (O3), and hydrogen peroxide (H2O2) when forming the vanadium-containing thin film.

[0083] According to another aspect of the present invention, the deposition process may include supplying one or more reactive gases selected from ammonia (NH), hydrazine (N2H4), nitrous oxide (N2O), and nitrogen (N2) when forming the vanadium-containing thin film.

[0084] Although the present invention has been described in detail through examples, the present invention is not necessarily limited to these examples and can be variously modified within the scope of the technical concept of the present invention. Therefore, the disclosed examples are for illustrative purposes only and do not limit the technical concept of the present invention. Therefore, the above-described examples should be understood as illustrative in all respects and not restrictive. The scope of the present invention should be interpreted by the following claims, and all technical concepts within the scope equivalent thereto should be interpreted as being included in the scope of the present invention.

Claims

1. A vanadium precursor compound represented by the following formula 1 or 2. 【Chemistry 1】 In the above Chemical Formula 1, R １ , R ２ , R ３ and R ４ are each independently selected from hydrogen, a linear alkyl group having 1 to 6 carbon atoms, and a branched alkyl group having 3 to 4 carbon atoms; In the above formula 2, n is an integer from 0 to 4, the ring containing the vanadium atom is a heterocycloalkyl group or a heterocycloalkene group; R １ , R ２ , R ３ , R ４ , R ５ and R ６ are each independently selected from hydrogen, a linear alkyl group having 1 to 6 carbon atoms, and a branched alkyl group having 3 to 6 carbon atoms.

2. In the above formula 1, R １ and R ２ are different from each other, and R ３ and R ４ and n are different from each other.

3. In the above formula 1, R １ and R ２ at least one of which is selected from a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 4 carbon atoms; In the above formula 1, R ３ and R ４ 2. The vanadium precursor compound according to claim 1, wherein at least one of: is selected from the group consisting of a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 4 carbon atoms.

4. The vanadium precursor compound according to claim 1 , wherein the vanadium precursor compound is represented by the following formula 3 or 4: 【Chemistry 2】

5. In the above formula 2, R １ and R ２ are different from each other, and R ３ and R ４ are different from each other, and R ５ and R ６ and n are different from each other.

6. In the above formula 2, R １ and R ２ at least one of which is selected from a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 4 carbon atoms; In the above formula 2, R ３ and R ４ at least one of which is selected from a linear alkyl group having 1 to 6 carbon atoms and a branched alkyl group having 3 to 4 carbon atoms; In the above formula 2, R ５ and R ６ 2. The vanadium precursor compound of claim 1, wherein is selected from linear alkyl groups having 1 to 6 carbon atoms and branched alkyl groups having 3 to 4 carbon atoms.

7. In the above formula 2, 2. The vanadium precursor compound of claim 1, wherein the ring containing the vanadium element is a heterocycloalkene group containing one or more double bonds.

8. The vanadium precursor compound according to claim 1 , wherein the vanadium precursor compound is represented by the following formula 5: 【Transformation 3】

9. The vanadium precursor compound of claim 1 , wherein the vanadium precursor compound is a liquid at room temperature.

10. A method for forming a vanadium-containing thin film, comprising depositing a thin film on a substrate through a metal organic chemical vapor deposition (MOCVD) process or an atomic layer deposition (ALD) process using the vanadium precursor compound according to any one of claims 1 to 9.

11. 11. The method of claim 10, wherein the deposition process is performed at a temperature ranging from 50°C to 700°C.

12. 11. The method of claim 10, wherein the deposition process comprises transferring the vanadium precursor compound to the substrate through one selected from the group consisting of a bubbling method, a vapor phase mass flow controller (MFC) method, a direct gas injection (DGI) method, a direct liquid injection (DLI) method, and an organic solution supply method in which the vanadium precursor compound is dissolved in an organic solvent and transferred.

13. The vanadium precursor compound is transported onto the substrate together with a carrier gas by the bubbling method, direct gas injection method, or direct liquid injection method; The carrier gas is argon (Ar), nitrogen (N ２ ), helium (He) and hydrogen (H ２ 13. The method for forming a vanadium-containing thin film according to claim 12, wherein the method comprises one or more selected from the group consisting of:

14. The deposition process is carried out in the presence of water vapor (H ２ O), oxygen (O ２ ), ozone (O ３ ) and hydrogen peroxide (H ２ O ２ 13. The method of claim 12, further comprising the step of supplying one or more reactive gases selected from the group consisting of:

15. The deposition process is carried out by using ammonia (NH ３ ), hydrazine (N ２ H ４ ), nitrous oxide (N ２ O) and nitrogen (N ２ 13. The method of claim 12, further comprising the step of supplying one or more reactive gases selected from the group consisting of:

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