Sensor and gas conversion system

Abstract

To provide a sensor and a gas conversion system capable of improving characteristics.SOLUTION: According to one embodiment, a sensor includes a base body and first to third detection parts. The base body includes first to third base body regions. The first detection part includes a first detection element. A first gap is provided between the first base body region and the first detection element. The second detection part includes a second detection element. A second gap is provided between the second base body region and the second sensing element. The third sensing unit includes a third sensing element. The third detection element includes a third resistance member, a third other resistance member, and a third conductive member. The third conductive member is between the third resistance member and the third other resistance member. A third gap is provided between the third base body region and the third sensing element.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE INVENTION Embodiments of the present invention relate to sensors and gas conversion systems. [Background technology]

[0002] For example, there are sensors using MEMS (Micro Electro Mechanical Systems) elements, etc. Improvement of the characteristics of sensors is desired. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-205105 Summary of the Invention [Problem to be solved by the invention]

[0004] Embodiments provide sensors and gas conversion systems that allow for improved performance. [Means for solving the problem]

[0005] According to an embodiment, the sensor includes a base, a first detection unit, a second detection unit, and a third detection unit. The base includes a first base region, a second base region, and a third base region. The first detection unit includes a first support unit, a first connection unit, and a first detection element. The first support unit is fixed to the base. The first connection unit is supported by the first support unit. The first connection unit supports the first detection element. A first gap is provided between the first base region and the first detection element. The first detection unit has a first area of ​​the first detection element, a first connection length of the first connection unit, a first connection width of the first connection unit, a first connection thickness of the first connection unit, a first connection material of the first connection unit, and a first distance. The first distance is the distance between the first base region and the first detection element. The second detection unit includes a second support unit, a second connection unit, and a second detection element. The second support unit is fixed to the base. The second connection portion is supported by the second support portion. The second connection portion supports the second detection element. A second gap is provided between the second base region and the second detection element. The second detection portion has at least one of a second area of ​​the second detection element that is different from the first area, a second connection length of the second connection portion that is different from the first connection length, a second connection width of the second connection portion that is different from the first connection width, a second connection thickness of the second connection portion that is different from the first connection thickness, a second connection material of the second connection portion that is different from the first connection material, and a second distance that is different from the first distance. The second distance is the distance between the second base region and the second detection element. The third detection portion includes a third detection element. The third detection element includes a third resistive element, a third other resistive element, and a third conductive element. The third conductive element is between the third resistive element and the third other resistive element. A third gap is provided between the third base region and the third detection element. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. [Figure 2] FIG. 2 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. [Figure 3] FIG. 3 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 4] FIG. 4 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 5] FIG. 5 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. [Figure 6] FIG. 6 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. [Figure 7] 7A and 7B are schematic plan views illustrating a part of the sensor according to the first embodiment. [Figure 8] 8A and 8B are schematic plan views illustrating a part of the sensor according to the first embodiment. [Figure 9] 9(a) and 9(b) are schematic views illustrating a part of the sensor according to the first embodiment. [Figure 10] 10A and 10B are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 11] 11A and 11B are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 12] 12A and 12B are schematic plan views illustrating the sensor according to the first embodiment. [Figure 13] 13A and 13B are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 14] 14A and 14B are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 15] FIG. 15 is a schematic diagram illustrating a gas conversion system according to the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] (First embodiment) FIG. 1 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. As shown in FIG. 1, a sensor 110 according to the embodiment includes a base 41, a first detection unit 10A, a second detection unit 10B, and a third detection unit 10C.

[0009] 1, the base 41 includes a first base region 41a, a second base region 41b, and a third base region 41c. In this example, the base 41 includes a substrate 41s and an insulating film 41i. The substrate 41s may be, for example, a semiconductor substrate (e.g., a silicon substrate). In one example, the base 41 may include a semiconductor. The substrate 41s may include, for example, a semiconductor circuit. The substrate 41s may include a connecting member such as a via electrode.

[0010] For example, the direction from the first substrate region 41a to the second substrate region 41b is along the upper surface of the substrate 41. The direction from the first substrate region 41a to the third substrate region 41c is along the upper surface of the substrate 41. In this example, the first substrate region 41a, the second substrate region 41b, and the third substrate region 41c are continuous with one another. As will be described later, these substrate regions may be separated from one another.

[0011] The first detection unit 10A includes a first support portion 31S, a first connection portion 31C, and a first detection element 11E. The first support portion 31S is fixed to the base 41. The first support portion 31S may be fixed to the base 41 via another member. The first connection portion 31C is supported by the first support portion 31S. The first connection portion 31C supports the first detection element 11E. A first gap g1 is provided between the first base region 41a and the first detection element 11E. A first gap g1 is further provided between the first connection portion 31C and the first base region 41a.

[0012] For example, the first detection element 11E includes a first resistive member 11, a first conductive member 21, and a first insulating member 18A. At least a portion of the first insulating member 18A is located between the first resistive member 11 and the first conductive member 21.

[0013] As shown in FIG. 1, the second detection unit 10B includes a second support portion 32S, a second connection portion 32C, and a second detection element 12E. The second support portion 32S is fixed to the base 41. The second support portion 32S may be fixed to the base 41 via another member. The second connection portion 32C is supported by the second support portion 32S. The second connection portion 32C supports the second detection element 12E. A second gap g2 is provided between the second base region 41b and the second detection element 12E. The second gap g2 is further provided between the second connection portion 32C and the second base region 41b.

[0014] The second detection element 12E includes a second resistive member 12, a second conductive member 22, and a second insulating member 18B. At least a portion of the second insulating member 18B is located between the second resistive member 12 and the second conductive member 22.

[0015] 1, the third detection unit 10C includes a third detection element 13E. The third detection element 13E includes a third resistance member 13, a third other resistance member 13a, and a third conductive member 23. The third conductive member 23 is located between the third resistance member 13 and the third other resistance member 13a. A third gap g3 is provided between the third base region 41c and the third detection element 13E.

[0016] 1, the third detection element 13E may further include a third insulating member 18C. At least a portion of the third insulating member 18C is located between the third resistive member 13a and the third conductive member 23, and between the third other resistive member 13a and the third conductive member 23.

[0017] As will be described later, the third detection element 13E is supported by a third support portion 33S and a third connection portion 33C (see FIGS. 9(a) and 9(b)).

[0018] For example, a first current is supplied to the first conductive member 21 from the control unit described below. This causes the temperature of the first detection element 11E to rise. The target gas 81 is introduced into the space around the first detection element 11E. The temperature of the first detection element 11E changes (e.g., decreases) due to thermal conduction by the target gas 81. The temperature change mainly depends on the type and concentration of the target substance contained in the target gas 81. The temperature change also depends on the flow rate of the target gas 81. The temperature change is detected as a change in the electrical resistance of the first resistance member 11. The first detection unit 10A functions at least as a first concentration sensor.

[0019] For example, a second current is supplied to the second conductive member 22 from the control unit described below. This increases the temperature of the second detection element 12E. The target gas 81 is introduced into the space around the second detection element 12E. The temperature of the second detection element 12E changes (e.g., decreases) due to thermal conduction by the target gas 81. The temperature change mainly depends on the type and concentration of the target substance contained in the target gas 81. The temperature change also depends on the flow rate of the target gas 81. The temperature change is detected as a change in the electrical resistance of the first resistance member 11. The second detection unit 10B functions at least as a second concentration sensor.

[0020] As will be described later, the first detection element 11E and the second detection element 12E have different thermal characteristics. The thermal characteristics include, for example, heat dissipation. The thermal characteristics include, for example, thermal resistance. This allows the multiple detection elements to have different characteristics with respect to the target gas 81. For example, it becomes possible to detect the concentrations of multiple types of detection targets contained in the target gas 81.

[0021] Meanwhile, a third current is supplied to the third conductive member 23 from the control unit (described later). This causes the temperatures of the third resistance member 13 and the third other resistance member 13a included in the third detection element 13E to rise. For example, the target gas 81 flows from the third resistance member 13 to the third other resistance member 13a. The flow of the target gas 81 causes a difference in temperature between the third resistance member 13 and the third other resistance member 13a. The temperature difference between these resistance members can be detected by detecting the electrical resistance of these resistance members. The temperature difference depends mainly on the flow rate of the target gas 81. The temperature difference also depends on the type and concentration of the target substance in the target gas 81. The third detection unit 10C functions at least as a flow sensor.

[0022] As described above, the detection characteristics of the first detection unit 10A (first concentration sensor) depend on the flow rate as well as the concentration. The detection characteristics of the second detection unit 10B (second concentration sensor) depend on the flow rate as well as the concentration. The detection characteristics of the third detection unit 10C (flow rate sensor) depend on the type and concentration of the detection target substance as well as the flow rate. These detection units are combined. This allows the type, concentration, and flow rate of the detection target substance to be accurately detected.

[0023] According to the embodiment, it is possible to provide a sensor capable of improving characteristics, for example, capable of detecting the concentration and flow rate of each of a plurality of different substances with high accuracy.

[0024] The number of concentration sensors may be any integer equal to or greater than two. On the other hand, it is sufficient that at least one flow rate sensor is provided. For example, a "first detection unit" to an "nth detection unit" are provided. "n" is any integer equal to or greater than three. The "nth detection unit" is a flow rate sensor (in the above example, the third detection unit 10C). The "first detection unit" to the "(n-1)th detection unit" are multiple sensors. In this case, the detection values ​​V of the "first detection unit" to the "nth detection unit" are out1 ~V outn is expressed by the following first equation.

number

[0025] In the first formula, "f1" to "f n " is a function. "C1" to "C n " is the concentration. "Flow" is the flow rate. By solving the simultaneous equations in the first equation, the concentration and flow rate can be obtained as the second equation.

number

[0026] The calculation of Equation 1 is performed by the control unit, which will be described later, to determine the concentration and flow rate of the target substance in target gas 81 to be detected.

[0027] As described above, the thermal characteristics differ between the first detection unit 10A and the second detection unit 10B. The difference in thermal characteristics can be obtained, for example, by some of the following configurations (and combinations thereof).

[0028] For example, the area of ​​the second detection element 12E is different from the area of ​​the first detection element 11E. For example, the length of the second connection portion 32C is different from the length of the first connection portion 31C. For example, the width of the second connection portion 32C is different from the width of the first connection portion 31C. For example, the thickness of the second connection portion 32C is different from the thickness of the first connection portion 31C. For example, the material of the second connection portion 32C is different from the material of the first connection portion 31C. For example, the distance between the second base region 41b and the second detection element 12E is different from the distance between the first base region 41a and the first detection element 11E. Due to at least one of these differences, different detection characteristics can be obtained from the multiple detection units. Examples of such configuration differences will be described later.

[0029] As shown in FIG. 1, for example, the first detection unit 10A may further include a first other support portion 31aS and a first other connection portion 31aC. The first other support portion 31aS is fixed to the base 41. The first other connection portion 31aC is supported by the first other support portion 31aS. The first other connection portion 31aC supports the first detection element 11E. A first gap g1 is provided between the first base region 41a and the first other connection portion 31aC. In this example, the first detection element 11E is provided between the first connection portion 31C and the first other connection portion 31aC. The first detection unit 10A may have a doubly supported beam structure. The configuration of the first other support portion 31aS may be the same as the configuration of the first support portion 31S. The configuration of the first other connection portion 31aC may be the same as the configuration of the first connection portion 31C.

[0030] As shown in FIG. 1, for example, the second detection unit 10B may further include a second other support portion 32aS and a second other connection portion 32aC. The second other support portion 32aS is fixed to the base 41. The second other connection portion 32aC is supported by the second other support portion 32aS. The second other connection portion 32aC supports the second detection element 12E. A second gap g2 is provided between the second base region 41b and the second other connection portion 32aC. In this example, the second detection element 12E is provided between the second connection portion 32C and the second other connection portion 32aC. The second detection unit 10B may have a doubly supported beam structure. The configuration of the second other support portion 32aS may be similar to that of the second support portion 32S. The configuration of the second other connection portion 32aC may be similar to that of the second connection portion 32C.

[0031] An example of the configuration of the third detection unit 10C will be described later.

[0032] 1, a first direction from the first substrate region 41a to the first detection element 11E is defined as the Z-axis direction. A direction from the second substrate region 41b to the second detection element 12E is along the first direction (Z-axis direction). A direction from the third substrate region 41c to the third detection element 13E is along the first direction (Z-axis direction).

[0033] FIG. 2 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. As shown in Fig. 2, the sensor 110 may include a housing 50H. The housing 50H includes an inlet 50I and an outlet 50O. The first detection element 11E, the second detection element 12E, and the third detection element 13E are provided between the base 41 and at least a part of the housing 50H. As shown in Fig. 2, the direction from the third resistance member 13 to the third other resistance member 13a is along the flow direction of the target gas 81 flowing from the inlet 50I to the outlet 50O.

[0034] FIG. 3 is a schematic plan view illustrating the sensor according to the first embodiment. FIG. 3 is a plan view in an XY plane perpendicular to the first direction (Z-axis direction). A portion of the housing 50H is omitted in FIG. 3. As shown in FIG. 3, in this example, the direction from the third resistance member 13 to the third other resistance member 13a is parallel to the flow direction of the target gas 81 flowing from the inlet 50I to the outlet 50O. In this example, the direction from the third resistance member 13 to the third other resistance member 13a is parallel to the direction from the first detection unit 10A to the second detection unit 10B. In this example, in a plane perpendicular to the Z-axis direction, the second detection unit 10B is located between the first detection unit 10A and the third detection unit 10C. Various modifications are possible to the relative positions of the first detection unit 10A, the second detection unit 10B, and the third detection unit 10C.

[0035] FIG. 4 is a schematic plan view illustrating the sensor according to the first embodiment. 4, the sensor 110A according to the embodiment also includes a first detection unit 10A, a second detection unit 10B, and a third detection unit 10C. In the sensor 110A, the direction from the third resistance member 13 to the third other resistance member 13a intersects with the direction from the first detection unit 10A to the second detection unit 10B. Other configurations of the sensor 110A may be similar to those of the sensor 110. In the sensor 110A, the direction from the third resistance member 13 to the third other resistance member 13a also follows the flow direction of the target gas 81 flowing from the inlet 50I to the outlet 50O.

[0036] FIG. 5 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. As shown in FIG. 5, the sensor 110B according to this embodiment includes a base 41, a first detection unit 10A, a second detection unit 10B, a third detection unit 10C, and a housing 50H. In the sensor 110B, the base 41 is a separate structure from the substrate 41s. The substrate 41s on which the first detection unit 10A is provided is provided in the first substrate region 41a. The substrate 41s on which the second detection unit 10B is provided is provided in the second substrate region 41b. The substrate 41s on which the third detection unit 10C is provided is provided in the third substrate region 41c. These substrates 41s are separated from each other. Except for this, the configuration of the sensor 110B may be similar to that of the sensor 110 or the sensor 110A.

[0037] In sensor 110B, the base 41 may be considered to be part of the housing 50H. A first detection unit 10A is provided between a first base region 41a of the base 41 and a part of the housing 50H. A second detection unit 10B is provided between a second base region 41b of the base 41 and a part of the housing 50H. A third detection unit 10C is provided between a third base region 41c of the base 41 and a part of the housing 50H.

[0038] FIG. 6 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. 6, the sensor 110C according to this embodiment includes a base 41, a first detection unit 10A, a second detection unit 10B, a third detection unit 10C, and a housing 50H. In the sensor 110C, the first base region 41a, the second base region 41b, and the third base region 41c are separated from one another. Other than this, the configuration of the sensor 110C may be similar to that of the sensor 110 or the sensor 110A.

[0039] In this manner, in the embodiment, at least two of the first substrate region 41a, the second substrate region 41b, and the third substrate region 41c may be discontinuous.

[0040] In this example, a plurality of housings 50H are provided. A first detection module including a first detector 10A may be provided between the first base region 41a and a portion of one of the plurality of housings 50H. A second detection module including a second detector 10B may be provided between the second base region 41b and a portion of another of the plurality of housings 50H. A second detection module including a third detector 10C may be provided between the third base region 41c and a portion of another of the plurality of housings 50H.

[0041] Each of the first base region 41a, the second base region 41b, and the third base region 41c may be a part of the housing 50H.

[0042] Examples of the configurations of the first detection unit 10A, the second detection unit 10B, and the third detection unit 10C will be further described below.

[0043] 7A and 7B are schematic plan views illustrating a part of the sensor according to the first embodiment. These figures illustrate the first detection unit 10A. Fig. 7(a) illustrates the plane pattern of the first conductive member 21. Fig. 7(b) illustrates the plane pattern of the first resistance member 11.

[0044] As shown in Figures 7(a) and 7(b), in this example, the first detection element 11E (the portion including the first resistance member 11, the first conductive member 21, and the first insulating member 18A) is octagonal. The planar shape of the first detection element 11E is arbitrary. The first detection element 11E has a first area S1. The first area S1 is the area of ​​the first detection element 11E in a plane intersecting a first direction (Z-axis direction) from the first base region 41a to the first detection element 11E.

[0045] 7(a) and 7(b), a control unit 70 may be provided. The control unit 70 is electrically connectable to the first resistance member 11 and the first conductive member 21. The control unit 70, for example, supplies a first current i1 to the first conductive member 21 to increase the temperature of the first detection element 11E.

[0046] The first detection unit 10A may further include a support portion 31bS and a connection portion 31bC. The support portion 31bS is fixed to the base 41. The connection portion 31bC is supported by the support portion 31bS. The connection portion 31bC supports the first detection element 11E.

[0047] The first detection unit 10A may further include a support portion 31cS and a connection portion 31cC. The support portion 31cS is fixed to the base 41. The connection portion 31cC is supported by the support portion 31cS. The connection portion 31cC supports the first detection element 11E. The first detection element 11E is provided between the connection portion 31bC and the connection portion 31cC.

[0048] The first current i1 may be supplied to the first conductive member 21 via the support portion 31bS, the connection portion 31bC, the support portion 31cS, and the connection portion 31cC.

[0049] As shown in FIG. 7(b), the control unit 70 may be electrically connected to the first resistance member 11, for example, via the first support portion 31S, the first connection portion 31C, the first other support portion 31aS, and the first other connection portion 31aC.

[0050] 7(b), the first detection element 11E may include a first layer 15a and a second layer 15b. The first layer 15a and the second layer 15b may include the same material and have the same thickness as the first resistance member 11. The first resistance member 11 is provided between the first layer 15a and the second layer 15b. By providing these layers, deformation (e.g., warpage) of the first detection element 11E is suppressed.

[0051] 8A and 8B are schematic plan views illustrating a part of the sensor according to the first embodiment. These figures illustrate the second detection unit 10B. Fig. 8(a) illustrates the plane pattern of the second conductive member 22. Fig. 8(b) illustrates the plane pattern of the second resistance member 12.

[0052] As shown in Figures 8(a) and 8(b), in this example, the second detection element 12E (the portion including the second resistance member 12, the second conductive member 22, and the second insulating member 18B) is octagonal. The planar shape of the second detection element 12E is arbitrary. The second detection element 12E has a second area S2. The second area S2 is the area of ​​the second detection element 12E in a plane intersecting the first direction (Z-axis direction). In this example, the second area S2 is different from the first area S1. In this example, the second area S2 is smaller than the first area S1.

[0053] 8(a) and 8(b), the control unit 70 can be electrically connected to the second resistance member 12 and the second conductive member 22. The control unit 70, for example, supplies a second current i2 to the second conductive member 22 to increase the temperature of the second detection element 12E.

[0054] The second detection unit 10B may further include a support portion 32bS and a connection portion 32bC. The support portion 32bS is fixed to the base 41. The connection portion 32bC is supported by the support portion 32bS. The connection portion 32bC supports the second detection element 12E.

[0055] The second detection unit 10B may further include a support portion 32cS and a connection portion 32cC. The support portion 32cS is fixed to the base 41. The connection portion 32cC is supported by the support portion 32cS. The connection portion 32cC supports the second detection element 12E. The second detection element 12E is provided between the connection portion 32bC and the connection portion 32cC.

[0056] The second current i2 may be supplied to the second conductive member 22 via the support portion 32bS, the connection portion 32bC, the support portion 32cS, and the connection portion 32cC.

[0057] As shown in FIG. 8(b), the control unit 70 may be electrically connected to the second resistance member 12, for example, via the second support portion 32S, the second connection portion 32C, the second other support portion 32aS, and the second other connection portion 32aC.

[0058] 8(b), the second detection element 12E may include a third layer 15c and a fourth layer 15d. The third layer 15c and the fourth layer 15d may include the same material and have the same thickness as the second resistance member 12. The second resistance member 12 is provided between the third layer 15c and the fourth layer 15d. By providing these layers, deformation (e.g., warpage) of the second detection element 12E is suppressed.

[0059] As shown in FIG. 1, the first detection element 11E has a first length L1 in a direction (e.g., a second direction) intersecting the first direction (Z-axis direction). The second detection element 12E has a second length L2 in a direction (e.g., a second direction) intersecting the first direction (Z-axis direction). In this example, the second length L2 is shorter than the first length L1. The difference in area is obtained.

[0060] 9(a) and 9(b) are schematic views illustrating a part of the sensor according to the first embodiment. These figures illustrate the third detection unit 10C. Fig. 9(a) is a cross-sectional view, and Fig. 9(b) is a plan view.

[0061] 9(a), for example, the third detection unit 10C may include a third support portion 33S and a third connection portion 33C. The third support portion 33S is fixed to the base 41. The third connection portion 33C is supported by the third support portion 33S. The third connection portion 33C supports the third detection element 13E. A third gap g3 is provided between the third base region 41c and the third connection portion 33C.

[0062] As shown in FIG. 9(a), for example, the third detection unit 10C may further include a third other support portion 33aS and a third other connection portion 33aC. The third other support portion 33aS is fixed to the base 41. The third other connection portion 33aC is supported by the third other support portion 33aS. The third other connection portion 33aC supports the third detection element 13E. A third gap g3 is provided between the third base region 41c and the third other connection portion 33aC. In this example, the third detection element 13E is provided between the third connection portion 33C and the third other connection portion 33aC. The third detection unit 10C may have a doubly supported beam structure.

[0063] As shown in FIG. 9(b), in this example, three pairs of third support portions 33S and third connection portions 33C are provided. Three pairs of third other support portions 33aS and third other connection portions 33aC are provided. The control unit 70 is electrically connected to the third resistance member 13 via one third connection portion 33C and one third other connection portion 33aC. The control unit 70 is electrically connected to the third other resistance member 13a via another third connection portion 33C and another third other connection portion 33aC. The control unit 70 is electrically connected to the third conductive member 23 via another third connection portion 33C and another third other connection portion 33aC.

[0064] The control unit 70 supplies a current to the third conductive member 23 to increase the temperature of the third detection element 13E. The control unit 70 can detect the difference between the electrical resistance of the third resistance member 13 and the electrical resistance of the third other resistance member 13a. Based on the detection result of the difference, the flow rate of the detection target gas 81 is detected.

[0065] A sensor according to the embodiment (e.g., sensor 110) may include a control unit 70 (see FIGS. 7(a) and 7(b)). The control unit 70 can obtain first detection data Ds1 (see FIG. 7(b)) obtained from the first detection unit 10A. The control unit 70 can obtain second detection data Ds2 (see FIG. 8(b)) obtained from the second detection unit 10B. The control unit 70 can obtain third detection data Ds3 (see FIG. 9(b)) obtained from the third detection unit 10C. The control unit 70 can derive the concentration and flow rate of the detection target gas 81 based on the first detection data Ds1, the second detection data Ds2, and the third detection data Ds3. The concentration of the detection target gas 81 includes the concentrations of each of multiple types of detection target substances contained in the detection target gas 81.

[0066] The plurality of types of detection target substances may include, for example, at least two selected from the group consisting of carbon dioxide, carbon monoxide, hydrogen, oxygen, and water. The plurality of types of detection target substances is arbitrary.

[0067] The first detection data Ds1 includes a first value Rv1 (see FIG. 7(b)) corresponding to the electrical resistance of the first resistance member 11. The second detection data Ds2 includes a second value Rv2 (see FIG. 8(b)) corresponding to the electrical resistance of the second resistance member 12. The third detection data Ds3 includes a third value Rv3 corresponding to the electrical resistance of the third resistance member 13 and a third other value Rx3 corresponding to the electrical resistance of the third other resistance member 13a (see FIG. 9(b)). The first value Rv1, the second value Rv2, the third value Rv3, and the third other value Rx3 change depending on the concentration of the target gas 81 and the flow rate of the target gas 81.

[0068] Based on these values, the control unit 70 can derive the concentration and flow rate of the detection target gas 81. In the derivation, the above-mentioned first and second formulas are used.

[0069] An example in which the distance between the second substrate region 41b and the second detection element 12E is different from the distance between the first substrate region 41a and the first detection element 11E will be described below. 10A and 10B are schematic cross-sectional views illustrating the sensor according to the first embodiment. 10(a) illustrates a first detection element 11E. FIG. 10(b) illustrates a second detection element 12E. As shown in FIGS. 10(a) and 10(b), in the sensor 111 according to the embodiment, the first detection element 11E and the second detection element 12E have different heights relative to the base 41. The remaining configuration of the sensor 111 may be similar to that of the sensor 110, for example.

[0070] In the sensor 111, a first distance d1 in the first direction (Z-axis direction) between the first substrate region 41a and the first detection element 11E is different from a second distance d2 in the first direction between the second substrate region 41b and the second detection element 12E. These different distances result in different heat dissipation characteristics from these detection elements via the substrate 41. Different heat dissipation characteristics are obtained. Utilizing the difference in heat dissipation characteristics enables detection with higher accuracy.

[0071] Below, some examples of differences in the configuration of the connection portion will be described. 11A and 11B are schematic cross-sectional views illustrating the sensor according to the first embodiment. 12A and 12B are schematic plan views illustrating the sensor according to the first embodiment. Figures 11(a) and 12(a) illustrate the first detection element 11E, and Figures 11(b) and 12(b) illustrate the second detection element 12E.

[0072] 11(a), 11(b), 12(a), and 12(b), in the sensor 120 according to the embodiment, the length of the first connecting portion 31C and the length of the second connecting portion 32C are different from each other. The remaining configuration of the sensor 120 may be similar to that of the sensor 110, for example.

[0073] As shown in Figure 12(a), in this example, the first connection portion 31C has a meandering spring structure, while as shown in Figure 12(b), the second connection portion 32C is linear.

[0074] 12(a), the first connection portion 31C has a first connection length LC1, which is the length of the first connection portion 31C along the path (first connection portion path) between the first support portion 31S and the first detection element 11E.

[0075] 12(b), the second connection portion 32C has a second connection length LC2. The second connection length LC2 is the length of the second connection portion 32C along the path (second connection portion path) between the second support portion 32S and the second detection element 12E. The second connection length LC2 is different from the first connection length LC1.

[0076] 12(a), the first connection portion 31C has a first connection portion width w1, which is the width of the first connection portion 31C along the first connection portion path between the first support portion 31S and the first detection element 11E.

[0077] As shown in FIG. 12(b), the second connection portion 32C has a second connection portion width w2. The second connection portion width w2 is the width of the second connection portion 32C in a direction intersecting the second connection portion path between the second support portion 32S and the second detection element 12E. The second connection portion width w2 may be different from the first connection portion width w1. The difference in width creates a difference in the thermal resistance of the connection portion. The difference in heat dissipation characteristics through the connection portion can be utilized.

[0078] 13A and 13B are schematic cross-sectional views illustrating the sensor according to the first embodiment. Fig. 13(a) illustrates a first detection element 11E. Fig. 13(b) illustrates a second detection element 12E. As shown in Figs. 13(a) and 13(b), in a sensor 121 according to the embodiment, the thickness of a first connection portion 31C and the thickness of a second connection portion 32C are different from each other. The remaining configuration of the sensor 121 may be similar to that of the sensor 110, for example.

[0079] 13(a), in the sensor 121 according to the embodiment, the first connecting portion 31C has a first connecting portion thickness t1, which is the thickness of the first connecting portion 31C in the first direction (Z-axis direction).

[0080] As shown in FIG. 13(b), the second connection portion 32C has a second connection portion thickness t2. The second connection portion thickness t2 is the thickness of the second connection portion 32C in the first direction (Z-axis direction). The second connection portion thickness t2 is different from the first connection portion thickness t1. This difference in thickness creates a difference in the thermal resistance of the connection portion. For example, this difference can be used to improve the heat dissipation characteristics through the connection portion.

[0081] 14A and 14B are schematic cross-sectional views illustrating the sensor according to the first embodiment. Fig. 14(a) illustrates a first detection element 11E. Fig. 14(b) illustrates a second detection element 12E. In the sensor 122 according to the embodiment shown in Figs. 14(a) and 14(b), the thickness and material of the first connection portion 31C and the material of the second connection portion 32C are different from each other. The remaining configuration of the sensor 122 may be similar to that of the sensor 110, for example.

[0082] In the sensor 122, the first connection portion 31C includes a first connection portion material. The second connection portion 32C includes a second connection portion material that is different from the first connection portion material. This difference in materials creates a difference in the thermal resistance of the connection portion. For example, the difference in heat dissipation characteristics through the connection portion can be utilized.

[0083] At least two of the above configurations described with respect to sensors 111 and 120 to 122 may be combined.

[0084] As already described in the embodiment, the first detection unit 10A has a first area S1 of the first detection element 11E, a first connection length LC1 of the first connection portion 31C, a first connection width w1 of the first connection portion 31C, a first connection thickness t1 of the first connection portion 31C, a first connection material of the first connection portion 31C, and a first distance d1, which is the distance between the first base region 41a and the first detection element 11E.

[0085] The second detection unit 10B has at least one of the following: a second area S2 of the second detection element 12E that is different from the first area S1; a second connection length LC2 of the second connection portion 32C that is different from the first connection length LC1; a second connection width w2 of the second connection portion 32C that is different from the first connection width w1; a second connection thickness t2 of the second connection portion 32C that is different from the first connection thickness t1; a second connection material of the second connection portion 32C that is different from the first connection material; and a second distance d2 that is different from the first distance d1. The second distance d2 is the distance between the second base region 41b and the second detection element 12E.

[0086] With this configuration, it is possible to detect the concentration of the detection target substance with higher accuracy. According to the embodiment, it is possible to provide a sensor with improved characteristics. For example, it is possible to detect the concentration of each of multiple different substances and the flow rate of the detection target gas 81 with high accuracy.

[0087] The first area S1 is the area of ​​the first detection element 11E in a plane intersecting a first direction (Z-axis direction) from the first base region 41a to the first detection element 11E. The second area S2 is the area of ​​the second detection element 12E in this plane.

[0088] The first connection length LC1 is the length of the first connection portion 31C along the first connection portion path between the first support portion 31S and the first detection element 11E. The first connection portion width w1 is the width of the first connection portion 31C in a direction intersecting the first connection portion path. The first connection portion thickness t1 is the thickness of the first connection portion 31C in the first direction.

[0089] The second connection length LC2 is the length of the second connection portion 32C along the second connection path between the second support portion 32S and the second detection element 12E. The second connection width w2 is the width of the second connection portion 32C in a direction intersecting the second connection path. The second connection thickness t2 is the thickness of the second connection portion 32C in the first direction.

[0090] The first distance d1 is the distance along the first direction between the first substrate region 41a and the first detection element 11E. The second distance d2 is the distance along the first direction between the second substrate region 41b and the second detection element 12E.

[0091] (Second embodiment) The second embodiment relates to a gas conversion system. FIG. 15 is a schematic diagram illustrating a gas conversion system according to the second embodiment. 15, a gas conversion system 310 according to an embodiment includes a sensor according to the first embodiment (e.g., sensor 110) and a gas conversion unit 80. The gas conversion unit 80 is capable of converting a source gas 85 into a detection target gas 81.

[0092] For example, the gas conversion unit 80 includes an inlet 80I and an outlet 80O. A raw material gas 85 is introduced from the inlet 80I. In one example, the raw material gas 85 is carbon dioxide. In the gas conversion unit 80, the raw material gas 85 is converted into a target gas 81. The target gas 81 may include, for example, methane. The target gas 81 may include, for example, water. The target gas 81 may include, for example, hydrogen. The target gas 81 may include, for example, carbon monoxide. The target gas 81 may include, for example, residual carbon dioxide.

[0093] The detection element section 50 included in the sensor 110 is provided in the piping of the outflow section 80O. The detection element section 50 includes the first detection section 10A, the second detection section 10B, the third detection section 10C, and the base 41 described above. For example, the sensor 110 detects a detection target gas 81. The control section 70 includes, for example, a processing section 71. The processing section 71 performs calculations related to, for example, the first and second equations. The processing section 71 derives the concentration of the detection target gas 81 and the flow rate of the detection target gas 81. The concentration of the detection target gas 81 includes the respective concentrations of multiple types of multiple detection target substances.

[0094] 15, gas conversion system 310 may further include gas conversion control unit 75. Gas conversion control unit 75 can control gas conversion unit 80 based on at least one of the above concentration and the above flow rate derived by control unit 70. This allows for highly accurate control of the operation of gas conversion unit 80, thereby enabling efficient gas conversion.

[0095] The embodiment may include the following configurations (e.g., technical solutions). (Configuration 1) a substrate including a first substrate region, a second substrate region, and a third substrate region; a first detection unit including a first support portion, a first connection portion, and a first detection element, wherein the first support portion is fixed to the base, the first connection portion is supported by the first support portion, the first connection portion supports the first detection element, a first gap is provided between the first base region and the first detection element, the first detection unit has a first area of ​​the first detection element, a first connection length of the first connection portion, a first connection width of the first connection portion, a first connection thickness of the first connection portion, a first connection material of the first connection portion, and a first distance, the first distance being the distance between the first base region and the first detection element; a second detection unit including a second support portion, a second connection portion, and a second detection element, wherein the second support portion is fixed to the base, the second connection portion is supported by the second support portion, the second connection portion supports the second detection element, a second gap is provided between the second base region and the second detection element, the second detection unit has at least one of a second area of ​​the second detection element that is different from the first area, a second connection length of the second connection portion that is different from the first connection length, a second connection width of the second connection portion that is different from the first connection width, a second connection thickness of the second connection portion that is different from the first connection thickness, a second connection material of the second connection portion that is different from the first connection material, and a second distance that is different from the first distance, the second detection unit including a third detection element, the third detection element including a third resistive member, a third other resistive member, and a third conductive member, the third conductive member being located between the third resistive member and the third other resistive member, and a third gap being provided between the third base region and the third detection element; A sensor equipped with

[0096] (Configuration 2) the first area is an area of ​​the first detection element in a plane intersecting a first direction from the first substrate region to the first detection element, the second area is the area of ​​the second detection element in the plane; the first connection length is the length of the first connection portion along a first connection portion path between the first support portion and the first detection element, the first connection portion width is the width of the first connection portion in a direction intersecting the first connection portion path, and the first connection portion thickness is the thickness of the first connection portion in the first direction; the second connection length is the length of the second connection portion along a second connection portion path between the second support portion and the second detection element, the second connection portion width is the width of the second connection portion in a direction intersecting the second connection portion path, and the second connection portion thickness is the thickness of the second connection portion in the first direction; the first distance is a distance along the first direction between the first substrate region and the first detection element; 2. The sensor of claim 1, wherein the second distance is a distance along the first direction between the second substrate region and the second sensing element.

[0097] (Configuration 3) the first gap is further provided between the first connection portion and the first base region, The sensor according to configuration 1 or 2, wherein the second gap is further provided between the second connection portion and the second base region.

[0098] (Configuration 4) 4. The sensor of any one of configurations 1 to 3, wherein the second area is different from the first area.

[0099] (Configuration 5) 5. The sensor according to any one of configurations 1 to 4, wherein the second connection length is different from the first connection length.

[0100] (Configuration 6) The sensor according to any one of configurations 1 to 5, wherein the second connection portion width is different from the first connection portion width.

[0101] (Configuration 7) 7. The sensor of any one of configurations 1 to 6, wherein the second distance is different from the first distance.

[0102] (Configuration 8) the first detection element includes a first resistive member, a first conductive member, and a first insulating member; at least a portion of the first insulating member is located between the first resistive member and the first conductive member; the second detection element includes a second resistive member, a second conductive member, and a second insulating member; The sensor according to any one of configurations 1 to 7, wherein at least a portion of the second insulating member is located between the second resistive member and the second conductive member.

[0103] (Configuration 9) the third detection element further includes a third insulating member; The sensor of any one of configurations 1 to 8, wherein at least a portion of the third insulating member is located between the third resistive member and the third conductive member, and between the third other resistive member and the third conductive member.

[0104] (Configuration 10) 10. The sensor according to any one of configurations 1 to 9, wherein the first substrate region, the second substrate region, and the third substrate region are continuous with one another.

[0105] (Configuration 11) 10. The sensor of any one of configurations 1 to 9, wherein at least two of the first substrate region, the second substrate region, and the third substrate region are discontinuous.

[0106] (Configuration 12) 12. The sensor according to any one of configurations 1 to 11, wherein the substrate includes a semiconductor.

[0107] (Configuration 13) 13. The sensor according to any one of configurations 1 to 12, wherein a direction from the third resistance member to the third other resistance member intersects with a direction from the first detection portion to the second detection portion.

[0108] (Configuration 14) 13. The sensor according to any one of configurations 1 to 12, wherein the direction from the third resistance member to the third other resistance member is along the direction from the first detection unit to the second detection unit.

[0109] (Configuration 15) further comprising a housing including an inlet and an outlet; 13. The sensor according to any one of configurations 1 to 12, wherein the first detection element, the second detection element, and the third detection element are provided between the base and at least a part of the housing.

[0110] (Configuration 16) 16. The sensor according to claim 15, wherein the direction from the third resistance member to the third other resistance member is along the direction of flow of the target gas flowing from the inlet to the outlet.

[0111] (Configuration 17) Further comprising a control unit, The sensor of configuration 8, wherein the control unit is capable of deriving the concentration of the target gas and the flow rate of the target gas based on first detection data obtained from the first detection unit, second detection data obtained from the second detection unit, and third detection data obtained from the third detection unit.

[0112] (Configuration 18) the first detection data includes a first value corresponding to the electrical resistance of the first resistance member; the second detection data includes a second value corresponding to the electrical resistance of the second resistance member; the third detection data includes a third value corresponding to the electrical resistance of the third resistance member and a third other value corresponding to the electrical resistance of the third other resistance member; 18. The sensor of claim 17, wherein the first value, the second value, the third value, and the third other value vary depending on the concentration and the flow rate.

[0113] (Configuration 19) 19. The sensor according to claim 17 or 18, a gas conversion unit capable of converting a raw material gas into the detection target gas; A gas conversion system comprising:

[0114] (Configuration 20) Further comprising a gas conversion control unit, 20. The gas conversion system of claim 19, wherein the gas conversion controller is capable of controlling the gas conversion unit based on at least one of the concentration and the flow rate derived by the controller.

[0115] According to the embodiment, it is possible to provide a sensor and a gas conversion system that can improve characteristics.

[0116] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of each element included in the sensor, such as the substrate, detection unit, and control unit, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0117] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0118] In addition, all sensors and gas conversion systems that can be implemented by a person skilled in the art by appropriately modifying the design based on the sensor and gas conversion system described above as an embodiment of the present invention also fall within the scope of the present invention, as long as they include the gist of the present invention.

[0119] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0120] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0121] 10A to 10C...first to third detection parts, 11 to 13...first to third resistance members, 13a...third and other regular members, 11E to 13E...first to third detection elements, 15a to 15d...first to fourth layers, 18A to 18C...first to third insulating members, 21 to 23...first to third conductive members, 31C~33C...first to third connection parts, 31S~33S...first to third support parts, 31aC~33aC...first to third other connection parts, 31aS~33aS...first to third other support parts, 31bC, 31cC, 32bC, 32cC...connection parts, 31bS, 31cS, 32bS, 32cS...Support part, 41...Base body, 41a-41c...first to third substrate regions, 41i...insulating film, 41s...substrate, 50...detection element section, 50H...housing, 50I...inlet, 50O...outlet, 70...control section, 75...gas conversion control section, 80...gas conversion section, 80I...inlet section, 80O...outlet section, 81...detection target gas, 85...raw material gas, 110, 110A-110C, 111, 120-122...sensor, 310...gas conversion section, Ds1-Ds3...first to third data, L1, L2...first and second lengths, LC1, LC2...first and second connection length, Rv1-Rv3...first to third values, Rx3...third other value, S1, S2...first and second areas, d1, d2...first and second distances, g1 to g3...first to third gaps, i1, i2...first and second currents, t1, t2...first and second connection thicknesses, w1, w2...first and second connection widths

Claims

1. a substrate including a first substrate region, a second substrate region, and a third substrate region; a first detection unit including a first support portion, a first connection portion, and a first detection element, wherein the first support portion is fixed to the base, the first connection portion is supported by the first support portion, the first connection portion supports the first detection element, a first gap is provided between the first base region and the first detection element, the first detection unit has a first area of ​​the first detection element, a first connection length of the first connection portion, a first connection width of the first connection portion, a first connection thickness of the first connection portion, a first connection material of the first connection portion, and a first distance, the first distance being the distance between the first base region and the first detection element; a second detection unit including a second support portion, a second connection portion, and a second detection element, wherein the second support portion is fixed to the base, the second connection portion is supported by the second support portion, the second connection portion supports the second detection element, a second gap is provided between the second base region and the second detection element, the second detection unit has at least one of a second area of ​​the second detection element that is different from the first area, a second connection length of the second connection portion that is different from the first connection length, a second connection width of the second connection portion that is different from the first connection width, a second connection thickness of the second connection portion that is different from the first connection thickness, a second connection material of the second connection portion that is different from the first connection material, and a second distance that is different from the first distance, a third detection unit including a third detection element, the third detection element including a third resistive member, a third other resistive member, and a third conductive member, the third conductive member being located between the third resistive member and the third other resistive member, and a third gap being provided between the third base region and the third detection element; Equipped with First detection data is obtained from the first detection unit; second detection data is obtained from the second detection unit; third detection data is obtained from the third detection unit; a first concentration of a first gas contained in the detection target gas, a second concentration of a second gas contained in the detection target gas, and a flow rate of the detection target gas are derived; the first concentration, the second concentration, and the flow rate satisfy a simultaneous equation including a first relational expression in which the first detection data is expressed by a first function, a second relational expression in which the second detection data is expressed by a second function, and a third relational expression in which the third detection data is expressed by a third function; the first function has the first concentration, the second concentration, and the flow rate as variables, the second function has the first concentration, the second concentration, and the flow rate as variables, The third function has the first concentration, the second concentration, and the flow rate as variables.

2. the first area is an area of ​​the first detection element in a plane intersecting a first direction from the first substrate region to the first detection element, the second area is an area of ​​the second detection element in the plane, the first connection length is a length of the first connection portion along a first connection portion path between the first support portion and the first detection element, the first connection portion width is a width of the first connection portion in a direction intersecting the first connection portion path, and the first connection portion thickness is a thickness of the first connection portion in the first direction, the second connection length is the length of the second connection portion along a second connection portion path between the second support portion and the second detection element, the second connection portion width is the width of the second connection portion in a direction intersecting the second connection portion path, and the second connection portion thickness is the thickness of the second connection portion in the first direction. the first distance is a distance along the first direction between the first substrate region and the first detection element; The sensor of claim 1 , wherein the second distance is the distance along the first direction between the second substrate region and the second sensing element.

3. The sensor of claim 1 , wherein the second area is different from the first area.

4. The sensor of claim 1 , wherein the second connection length is different from the first connection length.

5. The sensor of claim 1 , wherein the second connection width is different from the first connection width.

6. the first detection element includes a first resistive member, a first conductive member, and a first insulating member; at least a portion of the first insulating member is located between the first resistive member and the first conductive member; the second detection element includes a second resistive member, a second conductive member, and a second insulating member; The sensor of claim 1 , wherein at least a portion of the second insulating member is between the second resistive member and the second conductive member.

7. further comprising a housing including an inlet and an outlet; The sensor according to claim 1 , wherein the first sensing element, the second sensing element, and the third sensing element are provided between the base and at least a portion of the housing.

8. Further comprising a control unit, The sensor of claim 1 , wherein the controller derives the first concentration, the second concentration, and the flow rate.

9. A sensor according to claim 8; a gas conversion unit capable of converting a raw material gas into the detection target gas; A gas conversion system comprising:

10. Further comprising a gas conversion control unit, 10. The gas conversion system according to claim 9, wherein the gas conversion control unit is capable of controlling the gas conversion unit based on at least one of the first concentration, the second concentration, and the flow rate derived by the control unit.

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