Machining system and measuring member

Abstract

To provide a processing system capable of appropriately processing an object.SOLUTION: A processing system that processes an object by irradiating the object with an energy beam includes a mounting device on which the object is mounted, an irradiation device that irradiates the object with the energy beam, and a light receiving device that includes a beam passage member having an attenuation region that attenuates the energy beam and a plurality of passage regions through which the energy beam passes, and a light receiving unit that receives the energy beam that has passed through the plurality of passage regions.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to the technical field of a processing system capable of processing an object with an energy beam, and a measuring member used in the processing system. [Background technology]

[0002] Patent Document 1 describes a processing system that processes an object by irradiating the object with laser light. This type of processing system is required to process the object appropriately. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] US Patent Application Publication No. 2002 / 0017509 Summary of the Invention

[0004] According to a first aspect, there is provided a processing system for processing an object by irradiating the object with an energy beam, the processing system comprising: a mounting device on which the object is placed; an irradiation device that irradiates the object with the energy beam; a beam passing member having an attenuation region that attenuates the energy beam and a plurality of passing regions that allow the energy beam to pass; and a light receiving device having a light receiving unit that receives the energy beam that has passed through the plurality of passing regions.

[0005] According to a second aspect, there is provided a measuring member used in a processing system for processing an object, comprising an irradiation device that irradiates an object with an energy beam from a beam source and a measurement device that measures the object with a measurement beam, the measuring member comprising a passing area through which the energy beam passes toward a light receiving unit that receives the energy beam, and a mark that is measured by the measurement device and has a predetermined positional relationship with the passing area.

[0006] According to a third aspect, there is provided a processing system for processing an object by irradiating the object with an energy beam, the processing system comprising: a mounting device on which the object is placed; an irradiation device that irradiates the object with the energy beam; a beam passing member having an attenuation region that attenuates the energy beam and a passing region that allows the energy beam to pass; a light receiving device having a light receiving portion that receives the energy beam that has passed through the passing region; and a cover member that covers the passing region.

[0007] According to a fourth aspect, there is provided a processing system for processing an object by irradiating the object with an energy beam, the processing system comprising: a mounting device on which the object is placed; an irradiation device for irradiating the object with the energy beam; a receiving device having a light receiving unit for receiving the energy beam, at least a portion of which is provided on the mounting device; a measurement device for measuring at least one of the object and at least a portion of the light receiving device; a moving device for moving the mounting device; an acquisition device for acquiring information regarding the position of the mounting device; and a control device for controlling the moving device, wherein the control device moves the mounting device to a measurable position where the measurement device can measure at least a portion of the light receiving device, acquires measurement position information regarding the position of the mounting device moved to the measurable position using the acquisition device, and controls the position of the mounting device based on the measurement position information.

[0008] According to a fifth aspect, there is provided a processing system for processing an object by irradiating the object with an energy beam, the processing system comprising: a mounting device on which the object is placed; an irradiation device for irradiating the object with the energy beam; a receiving device having a light receiving unit for receiving the energy beam, at least a portion of which is provided on the mounting device; a measuring device for measuring at least one of the object and at least a portion of the light receiving device; a moving device for moving the mounting device; an acquisition device for acquiring information regarding the position of the mounting device; and a control device for controlling the moving device, wherein the control device moves the mounting device to an irradiation position where the irradiation device can irradiate at least a portion of the light receiving device with the energy beam, acquires irradiation position information regarding the position of the mounting device moved to the irradiation position using the acquisition device, and controls the position of the mounting device based on the irradiation position information. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a perspective view schematically showing the appearance of a processing system according to a first embodiment. [Figure 2] FIG. 2 is a system configuration diagram showing the system configuration of the machining system according to the first embodiment. [Figure 3] Each of FIGS. 3(a) to 3(c) is a cross-sectional view showing the removal process performed on the workpiece. [Figure 4] FIG. 4 is a perspective view schematically showing the structure of the irradiation optical system. [Figure 5] FIG. 5 is a plan view showing the arrangement position of the light receiving device. [Figure 6] FIG. 6 is a cross-sectional view showing the structure of the light receiving device. [Figure 7] FIG. 7 is a plan view showing the structure of the light receiving device. [Figure 8] FIG. 8 is a plan view showing a light receiving device in which an assembly error occurs with respect to the stage. [Figure 9] FIG. 9 is a plan view showing the scanning locus of the processing light irradiated onto the search mark. [Figure 10]FIG. 10 is a graph showing the results of receiving processing light through a search mark. [Figure 11] Figure 11(a) is a plan view showing the search mark of a light receiving device assembled in an ideal assembly position, Figure 11(b) is a plan view showing the search mark of a light receiving device assembled in a position other than the ideal assembly position, Figure 11(c) is a graph showing a light receiving signal corresponding to the result of receiving processing light through the search mark of a light receiving device assembled in the ideal assembly position, and Figure 11(d) is a graph showing a light receiving signal corresponding to the result of receiving processing light through the search mark of a light receiving device assembled in a position other than the ideal assembly position. [Figure 12] Figure 12(a) is a cross-sectional view showing how the processing head irradiates processing light onto the light receiving device to perform focus control operation, Figure 12(b) is a plan view showing how the processing head irradiates processing light onto the light receiving device to perform focus control operation, and Figure 12(c) is a graph showing the results of receiving the processing light by the light receiving element provided in the light receiving device. [Figure 13] FIG. 13 is a plan view showing a stage on which a reference mark is formed. [Figure 14] FIG. 14(a) is a cross-sectional view showing an example of a processing baseline and a measurement baseline, and FIG. 14(b) is a plan view showing an example of a processing baseline and a measurement baseline. [Figure 15] FIG. 15 is a plan view showing the relationship between the spot diameter of the processing light and the fine marks. [Figure 16] FIG. 16 is a plan view showing the relationship between the spot diameter of the processing light and the fine marks. [Figure 17] FIG. 17 is a plan view schematically showing the spot diameter of the processing light at each position on the surface of the workpiece when the processing light is deflected by the galvanometer mirror and displaced by the fθ lens and scans the surface of the workpiece. [Figure 18]Figure 18(a) is a cross-sectional view showing the positional relationship between the processing head and the light receiving device during the period when the status detection operation is performed, and Figure 18(b) is a plan view showing the positional relationship between the processing head and the light receiving device during the period when the status detection operation is performed. [Figure 19] Figure 19(a) is a cross-sectional view showing the positional relationship between the processing head and the light receiving device during the period when the status detection operation is performed, and Figure 19(b) is a plan view showing the positional relationship between the processing head and the light receiving device during the period when the status detection operation is performed. [Figure 20] Figure 20(a) is a plan view showing the irradiation position of the processing light on the surface of the workpiece (i.e., the surface along the XY plane) when temperature drift is not occurring, and Figure 20(b) is a plan view showing the irradiation position of the processing light on the surface of the workpiece (i.e., the surface along the XY plane) when temperature drift is occurring. [Figure 21] FIG. 21 is a cross-sectional view showing the structure of the stage of the second embodiment. [Figure 22] FIG. 22 is a cross-sectional view showing a method for arranging the light receiving device according to the third embodiment. [Figure 23] FIG. 23 is a cross-sectional view showing the structure of the light receiving device of the fourth embodiment. [Figure 24] FIG. 24 is a cross-sectional view showing the structure of the light receiving device of the fifth embodiment. [Figure 25] Each of FIG. 25(a) and FIG. 25(b) is a plan view showing an example of an indicator plate. [Figure 26] FIG. 26 is a system configuration diagram showing the system configuration of the machining system according to the sixth embodiment. [Figure 27] FIG. 27 is a cross-sectional view showing the structure of a stage equipped with a cover member. [Figure 28] FIG. 28 is a cross-sectional view showing another example of the cover member. [Figure 29] Each of Figures 29(a) and 29(b) is a cross-sectional view showing a cover member that does not cover the beam-passing member. [Figure 30] FIG. 30 is a perspective view showing the structure of the irradiation optical system of the seventh embodiment. [Figure 31] FIG. 31 is a system configuration diagram showing the system configuration of the machining system according to the eighth embodiment. [Figure 32] FIG. 32 is a system configuration diagram showing the system configuration of the machining system according to the ninth embodiment. [Figure 33] FIG. 33 is a system configuration diagram showing the system configuration of the machining system according to the tenth embodiment. [Figure 34] FIG. 34 is a perspective view schematically showing the appearance of the processing system of the tenth embodiment. [Figure 35] FIG. 35 is a system configuration diagram showing the system configuration of the machining system according to the eleventh embodiment. [Figure 36] FIG. 36 is a perspective view schematically showing the appearance of the processing system of the eleventh embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, an embodiment of a processing system and a measuring member will be described with reference to the drawings. Hereinafter, an embodiment of a processing system and a measuring member will be described using a processing system SYS that processes a workpiece W using processing light EL. However, the present invention is not limited to the embodiment described below.

[0011] In the following description, the positional relationships of the various components that make up the machining system SYS will be explained using an XYZ Cartesian coordinate system defined by mutually orthogonal X, Y, and Z axes. For ease of explanation, the X-axis and Y-axis directions are assumed to be horizontal (i.e., predetermined directions within a horizontal plane), and the Z-axis direction is assumed to be vertical (i.e., a direction perpendicular to the horizontal plane, essentially an up-and-down direction). The rotation directions around the X-axis, Y-axis, and Z-axis (in other words, tilt directions) are referred to as the θX direction, θY direction, and θZ direction, respectively. Here, the Z-axis direction may be the direction of gravity. The XY plane may also be assumed to be horizontal.

[0012] (1) Machining system SYSa of the first embodiment First, a machining system SYS of a first embodiment (hereinafter, the machining system SYS of the first embodiment will be referred to as a "machining system SYSa") will be described.

[0013] (1-1) Structure of the processing system SYSa First, the structure of the machining system SYSa of the first embodiment will be described with reference to Figures 1 and 2. Figure 1 is a perspective view schematically showing the appearance of the machining system SYSa of the first embodiment. Figure 2 is a system configuration diagram showing the system configuration of the machining system SYSa of the first embodiment.

[0014] 1 and 2, the processing system SYSa includes a processing apparatus 1, a measuring apparatus 2, a stage apparatus 3, and a control apparatus 4. The processing apparatus 1, the measuring apparatus 2, and the stage apparatus 3 are housed in a housing 5. However, the processing apparatus 1, the measuring apparatus 2, and the stage apparatus 3 do not have to be housed in the housing 5. In other words, the processing system SYSa does not have to include a housing 5 that houses the processing apparatus 1, the measuring apparatus 2, and the stage apparatus 3.

[0015] The processing device 1 is capable of processing a workpiece W under the control of the control device 4. The workpiece W is an object that is processed by the processing device 1. The workpiece W may be, for example, a metal, an alloy (e.g., duralumin, etc.), a semiconductor (e.g., silicon), a resin, a composite material such as CFRP (Carbon Fiber Reinforced Plastic), glass, ceramics, or an object made of any other material.

[0016] The processing device 1 may perform removal processing by irradiating the workpiece W with processing light EL to remove a portion of the workpiece W. The removal processing may include at least one of flattening, cylindrical processing, drilling, smoothing, cutting, and engraving (in other words, marking) to form (in other words, carve) any character or any pattern.

[0017] Here, an example of removal processing using the processing light EL will be described with reference to each of FIGS. 3(a) to 3(c). Each of FIGS. 3(a) to 3(c) is a cross-sectional view showing the removal processing performed on the workpiece W. As shown in FIG. 3(a), the processing device 1 irradiates the processing light EL onto a target irradiation area EA set (in other words, formed) on the surface of the workpiece W. When the processing light EL is irradiated onto the target irradiation area EA, the energy of the processing light EL is transmitted to the target irradiation area EA and a portion of the workpiece W adjacent to the target irradiation area EA. When heat caused by the energy of the processing light EL is transmitted, the heat caused by the energy of the processing light EL melts the material constituting the target irradiation area EA and a portion of the workpiece W adjacent to the target irradiation area EA. The melted material scatters in the form of droplets. Alternatively, the melted material evaporates due to the heat caused by the energy of the processing light EL. As a result, the target irradiation area EA and a portion of the workpiece W adjacent to the target irradiation area EA are removed. That is, as shown in FIG. 3(b), a recess (in other words, a groove) is formed on the surface of the workpiece W. In this case, it can be said that the processing apparatus 1 processes the workpiece W using the principle of so-called thermal processing. Furthermore, the processing apparatus 1 moves the target irradiation area EA on the surface of the workpiece W using the galvanometer mirror 1212 described later. That is, the processing apparatus 1 scans the surface of the workpiece W with the processing light EL. As a result, as shown in FIG. 3(c), at least a portion of the surface of the workpiece W is removed along the scanning trajectory of the processing light EL (i.e., the movement trajectory of the target irradiation area EA). Therefore, the processing apparatus 1 can appropriately remove the portion of the workpiece W that is to be removed by causing the processing light EL to scan the surface of the workpiece W along a desired scanning trajectory that corresponds to the area to be removed.

[0018] On the other hand, depending on the characteristics of the processing light EL, the processing device 1 may also process the workpiece W using the principle of non-thermal processing (e.g., ablation processing). That is, the processing device 1 may perform non-thermal processing (e.g., ablation processing) on ​​the workpiece W. For example, when pulsed light having an emission time of picoseconds or less (or, in some cases, nanoseconds or femtoseconds or less) is used as the processing light EL, the material constituting the target irradiation area EA and a portion adjacent to the target irradiation area EA of the workpiece W instantaneously evaporates and scatters. Note that when pulsed light having an emission time of picoseconds or less (or, in some cases, nanoseconds or femtoseconds or less) is used as the processing light EL, the material constituting the target irradiation area EA and a portion adjacent to the target irradiation area EA of the workpiece W may sublimate without passing through a molten state. Therefore, it is possible to form recesses (in other words, grooves) on the surface of the workpiece W while minimizing the effect of heat caused by the energy of the processing light EL on the workpiece W.

[0019] When performing removal processing, the processing device 1 may form a riblet structure on the workpiece W. The riblet structure may be a structure that can reduce the resistance of the surface of the workpiece W to the fluid (particularly, at least one of frictional resistance and turbulent frictional resistance). The riblet structure may include a structure that can reduce noise generated when the fluid and the surface of the workpiece W move relative to each other. The riblet structure may include, for example, a structure in which grooves extending in a first direction (e.g., the Y-axis direction) along the surface of the workpiece W are arranged in a plurality of rows along a second direction (e.g., the X-axis direction) that is along the surface of the workpiece W and intersects the first direction.

[0020] When performing removal processing, the processing apparatus 1 may form an arbitrary structure having an arbitrary shape on the surface of the workpiece W. One example of the arbitrary structure is a structure that generates vortices in the flow of a fluid on the surface of the workpiece W. Another example of the arbitrary structure is a structure that imparts hydrophobic properties to the surface of the workpiece W. Another example of the arbitrary structure is a regularly or irregularly formed fine texture structure (typically an uneven structure) on the order of micrometers or nanometers. Such a fine texture structure may include at least one of a shark skin structure and a dimple structure that have the function of reducing resistance caused by fluids (gas and / or liquid). The fine texture structure may also include a lotus leaf surface structure that has at least one of liquid repellency and self-cleaning properties (e.g., has the lotus effect). The fine texture structure may include at least one of a micro-protrusion structure having a liquid transport function (see U.S. Patent Publication No. 2017 / 0044002), a concave-convex structure having a lyophilic function, a concave-convex structure having an anti-fouling function, a moth-eye structure having at least one of a reflectance reducing function and a liquid repellent function, a concave-convex structure that exhibits a structural color by intensifying only light of a specific wavelength through interference, a pillar array structure having an adhesive function utilizing van der Waals forces, a concave-convex structure having an aerodynamic noise reducing function, a honeycomb structure having a droplet collecting function, and a concave-convex structure that improves adhesion with a layer formed on the surface.

[0021] 1 and 2, in order to process the workpiece W, the processing device 1 includes a processing light source 11, a processing head 12, a head drive system 13, and a position measurement device .

[0022] The processing light source 11 emits, for example, at least one of infrared light, visible light, ultraviolet light, and extreme ultraviolet light as the processing light EL. However, other types of light may be used as the processing light EL. The processing light EL may include pulsed light (i.e., multiple pulse beams). The processing light EL may be laser light. In this case, the processing light source 11 may include a laser light source (e.g., a semiconductor laser such as a laser diode (LD: Laser Diode)). The laser light source may include at least one of a fiber laser, a CO2 laser, a YAG laser, an excimer laser, etc. However, the processing light EL does not have to be laser light. The processing light source 11 may include any light source (e.g., at least one of an LED (Light Emitting Diode), a discharge lamp, etc.).

[0023] The processing head 12 irradiates the workpiece W with the processing light EL from the processing light source 11. For this reason, the processing head 12 may also be referred to as an irradiation device. In the example shown in FIG. 1, a stage 32 on which the workpiece W can be placed is disposed below the processing head 12. For this reason, the processing head 12 irradiates the workpiece W with the processing light EL by emitting the processing light EL downward from the processing head 12. In order to irradiate the workpiece W with the processing light EL, the processing head 12 is equipped with an irradiation optical system 121. The irradiation optical system 121 will be described below with reference to FIG. 4. FIG. 4 is a cross-sectional view schematically showing the structure of the irradiation optical system 121.

[0024] As shown in FIG. 4, the irradiation optical system 121 includes, for example, a focus changing optical system 1211, a galvanometer mirror 1212, and an fθ lens 1213.

[0025] The focus change optical system 1211 is an optical element that can change the focus position of the processing light EL (i.e., the convergence position of the processing light EL) along the traveling direction of the processing light EL. For this reason, the focus change optical system 1211 may also be referred to as a beam convergence position changing element. The focus change optical system 1211 may include, for example, multiple lenses aligned along the traveling direction of the processing light EL. In this case, the focus position of the processing light EL may be changed by moving at least one of the multiple lenses along its optical axis direction.

[0026] The processing light EL that passes through the focus change optical system 1211 is incident on the galvanometer mirror 1212. The galvanometer mirror 1212 deflects the processing light EL (i.e., changes the emission angle of the processing light EL) to change the emission direction of the processing light EL from the galvanometer mirror 1212. For this reason, the galvanometer mirror 1212 may be referred to as an emission direction changing member. When the emission direction of the processing light EL from the galvanometer mirror 1212 is changed, the position from which the processing light EL is emitted from the processing head 12 is changed. When the position from which the processing light EL is emitted from the processing head 12 is changed, the irradiation position of the processing light EL on the surface of the workpiece W is changed. Therefore, the galvanometer mirror 1212 can change (i.e., move) the irradiation position of the processing light EL on the surface of the workpiece W by deflecting the processing light EL. For this reason, the galvanometer mirror 1212 may be referred to as an irradiation position moving member.

[0027] The galvanometer mirror 1212 includes, for example, an X-scan mirror 1212X and a Y-scan mirror 1212Y. Each of the X-scan mirror 1212X and the Y-scan mirror 1212Y is a movable optical component disposed on the optical path of the processing light EL between the processing light source 11 and the fθ lens 1213. Each of the X-scan mirror 1212X and the Y-scan mirror 1212Y is a variable-tilt mirror whose angle with respect to the optical path of the processing light EL incident on each mirror can be changed. The X-scan mirror 1212X reflects the processing light EL toward the Y-scan mirror 1212Y. The X-scan mirror 1212X can swing or rotate around a rotation axis along the Y-axis. By swinging or rotating the X-scan mirror 1212X, the processing light EL scans the surface of the workpiece W along the X-axis direction. By swinging or rotating the X-scan mirror 1212X, the target irradiation area EA moves on the surface of the workpiece W along the X-axis direction. The Y-scanning mirror 1212Y reflects the processing light EL toward the fθ lens 1213. The Y-scanning mirror 1212Y can swing or rotate around a rotation axis along the X-axis. The swing or rotation of the Y-scanning mirror 1212Y causes the processing light EL to scan the surface of the workpiece W along the Y-axis direction. The swing or rotation of the Y-scanning mirror 1212Y causes the target irradiation area EA to move on the surface of the workpiece W along the Y-axis direction.

[0028] Such a galvanometer mirror 1212 enables the processing light EL to scan a processing shot area PSA that is determined based on the processing head 12. In other words, the galvanometer mirror 1212 enables the target irradiation area EA to move within the processing shot area PSA that is determined based on the processing head 12. The processing shot area PSA indicates an area (in other words, a range) where processing is performed by the processing device 1 while the positional relationship between the processing head 12 and the workpiece W is fixed (i.e., without change). Typically, the processing shot area PSA is set to coincide with or be narrower than the scanning range of the processing light EL deflected by the galvanometer mirror 1212 while the positional relationship between the processing head 12 and the workpiece W is fixed. If the processing shot area PSA is smaller than the portion of the workpiece W to be processed, the following operations are repeated: processing a portion of the workpiece W by scanning the processing shot area PSA set on that portion with the processing light EL; and changing the relative positional relationship between the processing head 12 and the workpiece W to change the position of the processing shot area PSA on the workpiece W.

[0029] In addition to or instead of the galvanometer mirror 1212, the irradiation optical system 121 may include any optical element capable of deflecting the processing light EL (i.e., capable of changing at least one of the emission direction and irradiation position of the processing light EL). An example of such an optical element is a polygon mirror having multiple reflecting surfaces with different angles. The polygon mirror is rotatable so as to change the angle of incidence of the processing light EL with respect to one reflecting surface while the processing light EL is being irradiated onto that one reflecting surface and to switch the reflecting surface onto which the processing light EL is irradiated among the multiple reflecting surfaces.

[0030] The fθ lens 1213 is an optical system for emitting the processing light EL from the galvanometer mirror 1212 toward the workpiece W. In particular, the fθ lens 1213 is an optical element that can focus the processing light EL from the galvanometer mirror 1212 on a focusing surface. For this reason, the fθ lens 1213 may be referred to as a focusing optical system. The focusing surface of the fθ lens 1213 may be set on, for example, the surface of the workpiece W. In this case, the fθ lens 1213 can focus the processing light EL from the galvanometer mirror 1212 on the surface of the workpiece W.

[0031] 1 and 2, the head drive system 13 moves the machining head 12 along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction. FIG. 1 shows an example in which the head drive system 13 moves the machining head 12 along the Z-axis direction. In this case, the head drive system 13 may include, for example, a Z slider member 131 extending along the Z-axis direction. The Z slider member 131 is disposed on a support frame 6 that is disposed on a base plate 31 (described later) via a vibration isolation device. The support frame 6 may include, for example, a pair of leg members 61 that are disposed on the base plate 31 via a vibration isolation device and extend along the Z-axis direction, and a beam member 62 that is disposed on the pair of leg members 61 and extends along the X-axis direction to connect the upper ends of the pair of leg members 61. The Z slider member 131 is disposed on the beam member 62 via, for example, a support member 63 that extends along the Z-axis direction. The processing head 12 is connected to the Z slider member 131 so as to be movable along the Z slider member 131 .

[0032] When the machining head 12 moves, the positional relationship between the machining head 12 and the stage 32 (and further the workpiece W placed on the stage 32) changes. Therefore, moving the machining head 12 is equivalent to changing the positional relationship between the machining head 12 and the stage 32 and the workpiece W.

[0033] The position measurement device 14 is capable of measuring (in other words, detecting) the position of the processing head 12. The position measurement device 14 may include, for example, at least one of an encoder and a laser interferometer.

[0034] The measuring device 2 is capable of measuring the workpiece W under the control of the control device 4. In order to measure the workpiece W, the measuring device 2 is equipped with a measuring head 21, a head drive system 22, and a position measuring device 23.

[0035] The measurement head 21 is capable of measuring the workpiece W under the control of the control device 4. For example, the measurement head 21 may be a device capable of measuring the state of the workpiece W. The state of the workpiece W may include the position of the workpiece W. The position of the workpiece W may include the position of the surface of the workpiece W. The position of the surface of the workpiece W may include the position of each surface portion obtained by dividing the surface of the workpiece W in at least one of the X-axis direction, the Y-axis direction, and the Z-axis direction. The state of the workpiece W may include the shape (e.g., three-dimensional shape) of the workpiece W. The shape of the surface of the workpiece W may include the shape of the surface of the workpiece W. The shape of the surface of the workpiece W may include the orientation of each surface portion obtained by dividing the surface of the workpiece W (e.g., the direction of the normal to each surface portion, which is substantially equivalent to the amount of inclination of each surface portion with respect to at least one of the X-axis, the Y-axis, and the Z-axis) in addition to or instead of the position of the surface of the workpiece W described above. Measurement information regarding the measurement results of the measurement head 21 is output from the measurement head 21 to the control device 4.

[0036] The measurement head 21 measures the workpiece W in units of measurement shot areas MSA. The measurement shot areas MSA indicate areas (in other words, ranges) where measurement is performed by the measurement head 21 while the positional relationship between the measurement head 21 and the workpiece W is fixed (i.e., without change). The measurement shot areas MSA may also be referred to as the measurable range or measurable field of the measurement head 21.

[0037] The measurement head 21 may measure the workpiece W optically. That is, the measurement head 21 may measure the workpiece W using any measurement beam such as measurement light. For example, the measurement head 21 may measure the workpiece W using a light section method that projects slit light onto the surface of the workpiece W and measures the shape of the projected slit light. For example, the measurement head 21 may measure the workpiece W using white light interferometry that measures the interference pattern between white light that has passed through the workpiece W and white light that has not passed through the workpiece W. For example, the measurement head 21 may measure the workpiece W using at least one of the following methods: a pattern projection method in which a light pattern is projected onto the surface of the workpiece W and the shape of the projected pattern is measured; a time-of-flight method in which light is projected onto the surface of the workpiece W and the distance to the workpiece W is measured from the time it takes for the projected light to return, and this is performed at multiple positions on the workpiece W; a moire topography method (specifically, a grating projection method or a grating projection method); a holographic interferometry method; an autocollimation method; a stereo method; an astigmatism method; a critical angle method; a knife-edge method; an interferometry method; and a confocal method. For example, the measurement head 21 may measure the workpiece W by capturing an image of the workpiece W illuminated with illumination light. In either case, the measurement head 21 may include a light source that emits measurement light ML (e.g., slit light, white light, or illumination light) and a light receiver that receives light from the workpiece W irradiated with the measurement light ML (e.g., reflected light of the measurement light).

[0038] Head drive system 22 moves measurement head 21 along at least one of the X-axis direction, Y-axis direction, Z-axis direction, θX direction, θY direction, and θZ direction. Fig. 1 shows an example in which head drive system 22 moves measurement head 21 along the Z-axis direction. In this case, head drive system 22 may include, for example, a Z slider member 221 extending along the Z-axis direction. Z slider member 221 may be disposed on beam member 62 via support member 64 extending in the Z-axis direction. Measurement head 21 is connected to Z slider member 221 so as to be movable along Z slider member 221.

[0039] When the measurement head 21 moves, the positional relationship between the measurement head 21 and the stage 32 (and further the workpiece W placed on the stage 32) changes. Therefore, moving the measurement head 21 is equivalent to changing the positional relationship between the measurement head 21 and the stage 32 and the workpiece W.

[0040] The position measurement device 23 is capable of measuring (in other words, detecting) the position of the measurement head 21. The position measurement device 23 may include, for example, at least one of an encoder and a laser interferometer.

[0041] The stage device 3 includes a base 31 , a stage 32 , a stage drive system 33 , a position measurement device 34 , and a light receiving device 35 .

[0042] The surface plate 31 is placed on the bottom surface of the housing 5 (or on a support surface such as a floor on which the housing 5 is placed). A stage 32 is placed on the surface plate 31. A vibration isolation device (not shown) may be installed between the surface plate 31 and the bottom surface of the housing 5 or a support surface such as a floor on which the housing 5 is placed, in order to reduce transmission of vibrations from the surface plate 31 to the stage 32. Furthermore, the support frame 6 described above may be placed on the surface plate 31.

[0043] The stage 32 is a mounting device on which the workpiece W is placed. The stage 32 may be capable of holding the workpiece W placed on the stage 32. Alternatively, the stage 32 may not be capable of holding the workpiece W placed on the stage 32. In this case, the workpiece W may be placed on the stage 32 in a clampless manner.

[0044] The stage drive system 33 moves the stage 32. For this reason, the stage drive system 33 may also be referred to as a moving device. When the stage 32 moves, the workpiece W placed on the stage 32 also moves together with the stage 32. For this reason, it can be said that the workpiece W is movably placed on the stage 32 (specifically, the workpiece W is movably placed together with the stage 32). The stage drive system 33 moves the stage 32, for example, along at least one of the X-axis, Y-axis, Z-axis, θX direction, θY direction, and θZ direction. In the example shown in FIG. 1, the stage drive system 33 moves the stage 32 along each of the X-axis and Y-axis. In this case, the stage drive system 33 may include, for example, an X-slide member 331 extending along the X-axis direction (two X-slide members 331 in the example shown in FIG. 1) and a Y-slide member 332 extending along the Y-axis direction (one Y-slide member 332 in the example shown in FIG. 1). The two X-slide members 331 are arranged on the base 31 so as to be aligned along the Y-axis direction. Y slide member 332 is connected to two X slide members 331 so as to be movable along the two X slide members 331. Stage 32 is connected to Y slide member 332 so as to be movable along Y slide member 332. It can also be said that each of X slide member 331 and Y slide member 332 can function as a moving member that moves stage 32 along a linear direction.

[0045] When the stage 32 moves, the positional relationship between the stage 32 and the workpiece W, and the positional relationship between the processing head 12 and the measuring head 21 changes. Therefore, moving the stage 32 is equivalent to changing the positional relationship between the stage 32 and the workpiece W, and the positional relationship between the processing head 12 and the measuring head 21.

[0046] The position measurement device 34 is capable of measuring (in other words, detecting) the position of the stage 32. The position measurement device 34 may include, for example, at least one of an encoder and a laser interferometer.

[0047] The light receiving device 35 includes a light receiving portion capable of receiving the processing light EL from the processing head 12. Furthermore, the light receiving device 35 includes a measuring member that can be measured by the measurement head 21. The results of receiving the processing light EL by the light receiving device 35 and the results of measurement by the measurement head 21 of the light receiving device 35 are used to control the operation of the processing system SYSa. The structure of the light receiving device 35 will be described in detail later with reference to FIGS. 5 to 7.

[0048] The control device 4 controls the operation of the machining system SYSa. For example, the control device 4 may set machining conditions for the workpiece W and control the machining device 1 and the stage device 3 so that the workpiece W is machined in accordance with the set machining conditions.

[0049] The control device 4 controls the operation of the machining system SYSa. The control device 4 may include, for example, an arithmetic device and a storage device. The arithmetic device may include, for example, at least one of a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). The storage device may include, for example, a memory. The control device 4 functions as a device that controls the operation of the machining system SYSa when the arithmetic device executes a computer program. This computer program is a computer program that causes the arithmetic device to perform (i.e., execute) the operations to be performed by the control device 4, which will be described later. In other words, this computer program is a computer program that causes the control device 4 to function so as to cause the machining system SYS to perform the operations to be performed by the control device 4. The computer program executed by the arithmetic device may be recorded in a storage device (i.e., a recording medium) included in the control device 4, or may be recorded in any storage medium (e.g., a hard disk or semiconductor memory) built into or externally attachable to the control device 4. Alternatively, the arithmetic device may download the computer program to be executed from a device external to the control device 4 via a network interface.

[0050] The control device 4 does not have to be provided inside the machining system SYSa. For example, the control device 4 may be provided as a server or the like outside the machining system SYSa. In this case, the control device 4 and the machining system SYSa may be connected via a wired and / or wireless network (or a data bus and / or a communication line). The wired network may be a network using a serial bus interface, such as at least one of IEEE1394, RS-232x, RS-422, RS-423, RS-485, and USB. The wired network may be a network using a parallel bus interface. The wired network may be a network using an interface compliant with Ethernet (registered trademark), such as at least one of 10BASE-T, 100BASE-TX, and 1000BASE-T. The wireless network may be a network using radio waves. An example of a network using radio waves is a network compliant with IEEE802.1x (for example, at least one of wireless LAN and Bluetooth (registered trademark)). The wireless network may be a network using infrared rays. The wireless network may be a network using optical communication. In this case, the control device 4 and the processing system SYSa may be configured to be able to transmit and receive various information via the network. The control device 4 may also be able to transmit information such as commands and control parameters to the processing system SYSa via the network. The processing system SYSa may include a receiving device that receives information such as commands and control parameters from the control device 4 via the network. The processing system SYSa may also include a transmitting device that transmits information such as commands and control parameters to the control device 4 via the network (i.e., an output device that outputs information to the control device 4). Alternatively, a first control device that performs part of the processing performed by the control device 4 may be provided inside the processing system SYSa, while a second control device that performs another part of the processing performed by the control device 4 may be provided outside the processing system SYSa.

[0051] The recording medium for recording the computer program executed by the control device 4 may be at least one of a CD-ROM, CD-R, CD-RW, flexible disk, optical disk such as MO, DVD-ROM, DVD-RAM, DVD-R, DVD+R, DVD-RW, DVD+RW, and Blu-ray (registered trademark), magnetic medium such as magnetic tape, magneto-optical disk, semiconductor memory such as USB memory, and any other medium capable of storing a program. The recording medium may also include a device capable of recording a computer program (e.g., a general-purpose device or a dedicated device in which a computer program is implemented in an executable state in at least one of software and firmware). Furthermore, each process or function included in the computer program may be realized by a logical processing block realized within the control device 4 when the control device 4 (i.e., a computer) executes the computer program, or by hardware such as a predetermined gate array (FPGA, ASIC) included in the control device 4, or may be realized in a form in which the logical processing block and a partial hardware module that realizes some of the hardware elements are mixed.

[0052] (1-2) Structure of the light receiving device 35 Next, the structure of the light receiving device 35 provided in the stage device 3 will be described with reference to Fig. 5 to Fig. 7. Fig. 5 is a plan view showing the arrangement position of the light receiving device 35. Fig. 6 is a cross-sectional view showing the structure of the light receiving device 35. Fig. 7 is a plan view showing the structure of the light receiving device 35. Note that Fig. 6 corresponds to the cross-sectional view taken along line VII-VII' in Fig. 7.

[0053] As shown in FIG. 5 , the light receiving device 35 is disposed on the stage 32. The light receiving device 35 may be disposed at a position of the stage 32 different from the mounting surface 321 on which the workpiece W is placed. For example, the light receiving device 35 may be disposed at a position of the stage 32 away from the mounting surface 321 in at least one of the X-axis direction and the Y-axis direction. For example, the light receiving device 35 may be disposed on an outer peripheral surface 322 of the stage 32 located outside the mounting surface 321 (more specifically, on a member of the stage 32 whose outer peripheral surface 322 forms the surface). However, the light receiving device 35 may also be disposed on the mounting surface 321 (more specifically, on a member of the stage 32 whose surface is the mounting surface 321). The light receiving device 35 may be disposed at any position on the stage 32. At least a portion of the light receiving device 35 may be detachable from the stage 32. Alternatively, the light receiving device 35 may be integrated with the stage 32. Furthermore, multiple light receiving devices 35 may be disposed on the stage 32. 5, one of the plurality of light receiving devices 35 may be disposed at an end in the -X direction and an end in the +Y direction of the outer peripheral surface 322 of the stage 32, and another of the plurality of light receiving devices 35 may be disposed at an end in the +X direction and an end in the -Y direction of the outer peripheral surface 322. In other words, at least two of the plurality of light receiving devices 35 may be disposed diagonally on the stage 32. Alternatively, the plurality of light receiving devices 35 may be disposed at four corners of the stage 32. The stage 32 may also be referred to as a table.

[0054] As shown in FIG. 6 , the light receiving device 35 includes a beam transmitting member 351 and a light receiving element 352. The beam transmitting member 351 is a plate-like member extending along the XY plane. The beam transmitting member 351 has a rectangular shape within the XY plane, but may have any other shape (e.g., a circle or an ellipse). The size of one side of the beam transmitting member 351 is, for example, several millimeters to several tens of millimeters, but may have any other size. The light receiving element 352 includes a light receiving surface 3521 extending along the XY plane. The shape of the light receiving surface 3521 within the XY plane is rectangular, but may have any other shape (e.g., a circle or an ellipse). The size of one side of the light receiving surface 3521 may be the same as the size of one side of the beam transmitting member 351, or may be smaller or larger than the size of one side of the beam transmitting member 351.

[0055] The beam passing member 351 and the light receiving element 352 are disposed inside a recess 323 (i.e., a concave portion) formed in the stage 32. That is, the beam passing member 351 and the light receiving element 352 are disposed in the recess 323 recessed from the outer circumferential surface 322 toward the -Z side. Note that, since the light receiving device 35 is disposed on the outer circumferential surface 322 as described above, the recess 323 is formed on the outer circumferential surface 322. However, at least one of the beam passing member 351 and the light receiving element 352 may be disposed at a position different from the recess 323.

[0056] Within the recess 323, the beam passing member 351 is disposed above the light receiving element 352. That is, the beam passing member 351 is disposed closer to the machining head 12 and the measuring head 21 than the light receiving element 352. In this case, as shown in FIG. 6 , the surface of the beam passing member 351 (specifically, the surface facing the machining head 12 and the measuring head 21, that is, the surface on the +Z side) may be located below the outer circumferential surface 322 (that is, the surface of the stage 32). In this case, since the light receiving device 35 does not protrude from the surface of the stage 32, the possibility that the workpiece W placed on the stage 32 will accidentally come into contact with the light receiving device 35 (particularly the beam passing member 351) is reduced. As a result, the possibility that the beam passing member 351 will be damaged or contaminated due to the workpiece W coming into contact with the beam passing member 351 is reduced. However, the surface of the beam passing member 351 may be located at the same height as the outer circumferential surface 322 or may be located above the outer circumferential surface 322.

[0057] The beam passing member 351 includes a glass substrate 3511 and an attenuation film 3512 formed on at least a part of the surface of the glass substrate 3511. The attenuation film 3512 is a member capable of attenuating the processing light EL incident on the attenuation film 3512. Note that "attenuation of the processing light EL by the attenuation film 3512" in the first embodiment may include not only making the intensity of the processing light EL passing through the attenuation film 3512 smaller than the intensity of the processing light EL incident on the attenuation film 3512, but also blocking (i.e., shielding) the processing light EL incident on the attenuation film 3512. Therefore, when the processing light EL is incident on the attenuation film 3512, the processing light EL attenuated by the attenuation film 3512 is incident on the light receiving element 352 through the attenuation film 3512, or the processing light EL is blocked by the attenuation film 3512 and does not enter the light receiving element 352. The damping film 3512 may be made of a chromium film or a chromium oxide film.

[0058] At least one opening 353 is formed in the attenuation film 3512. In the example shown in Fig. 6, a plurality of openings 353 are formed in the attenuation film 3512. The openings 353 are through-holes that penetrate the attenuation film 3512 in the Z-axis direction. Therefore, when the processing light EL is incident on the opening 353 formed in the attenuation film 3512, the processing light EL passes through the beam passing member 351 via the opening 353. In other words, the processing light EL is incident on the light receiving element 352 via the opening 353 without being attenuated or blocked by the attenuation film 3512.

[0059] In this way, the portion of the glass substrate 3511 where the attenuation film 3512 is formed (i.e., the portion where the opening 353 is not formed) functions as an attenuation region 354 that attenuates the processing light EL. On the other hand, the portion of the glass substrate 3511 where the attenuation film 3512 is not formed (i.e., the portion where the opening 353 is formed) functions as a passing region 355 that passes the processing light EL. In this case, the passing region 355 does not attenuate the processing light EL passing through it. However, the passing region 355 may attenuate the processing light EL passing through it. In other words, the passing region 355 does not need to be a region through which all (i.e., 100%) of the processing light EL incident on the passing region 355 passes, but may be a region through which only a portion of the processing light EL incident on the passing region 355 passes. However, the attenuation rate of the processing light EL by the passing region 355 is smaller than the attenuation rate of the processing light EL by the attenuation region 354. The attenuation region 354 is typically arranged adjacent to the passing region 355. That is, the attenuation region 354 is arranged between a plurality of passing regions 355 respectively formed by the plurality of openings 353. The plurality of passing regions 355 are arranged within the attenuation region 354. Note that, as described above, when the surface of the beam passing member 351 is located below the outer circumferential surface 322 (i.e., the surface of the stage 32), the portion of the beam passing member 351 that functions as the attenuation region 354 and the portion of the beam passing member 351 that functions as the passing region 355 are also located below the outer circumferential surface 322 (i.e., the surface of the stage 32).

[0060] At least one of the plurality of passing regions 355 formed by the plurality of openings 353 may form a mark (i.e., pattern) 356 having a predetermined shape in a plane (typically, the XY plane) along the surface of the attenuation film 3512. This mark 356 is measured by the measurement head 21. Therefore, the beam passing member 351 on which the mark 356 measurable by the measurement head 21 is formed may be referred to as a measurement member.

[0061] For example, as shown in FIG. 7 , a slit mark 356-1, which is an example of the mark 356, may be formed on the beam passing member 351. The slit mark 356-1 is a mark formed by a passing region 355 having a single linear (e.g., slit-like) shape in a plane along the surface of the attenuation film 3512. The length (i.e., longitudinal size) of the linear passing region 355 forming the slit mark 356-1 is, for example, 0.1 mm to 1 mm, but may be other lengths. The width (i.e., lateral size) of the linear passing region 355 forming the slit mark 356-1 is, for example, several μm, but may be other lengths. In the example shown in FIG. 7 , multiple slit marks 356-1 are formed on the beam passing member 351, each at a different angle relative to the X-axis and the Y-axis. In the example shown in FIG. 7 , the multiple slit marks 356-1 are arranged along the Y-axis direction, but the multiple slit marks 356-1 may be formed at any position. However, a single slit mark 356-1 may be formed on the beam passing member 351.

[0062] For example, as shown in FIG. 7, a fine mark 356-2, which is an example of a mark 356, may be formed on the beam-passing member 351. The fine mark 356-2 is a mark formed by a plurality of linear passing regions 355, each extending in one direction and arranged in another direction intersecting the first direction. The length (i.e., longitudinal size) of the linear passing region 355 forming the fine mark 356-2 is, for example, 0.1 mm to 1 mm, but may be other lengths. The width (i.e., lateral size) of the linear passing region 355 forming the fine mark 356-2 is, for example, several μm, but may be other widths. The beam-passing member 351 may be formed with a plurality of fine marks 356-2, each having a linear passing region 355 extending in a different direction. For example, as shown in FIG. 7 , the beam passing member 351 may be formed with a fine mark 356-2 formed by a plurality of linear passing regions 355 each extending along the Y-axis direction and arranged along the X-axis direction, and a fine mark 356-2 formed by a plurality of linear passing regions 355 each extending along the X-axis direction and arranged along the Y-axis direction. Furthermore, the beam passing member 351 may be formed with a plurality of fine marks 356-2 in which the arrangement pitch of the linear passing regions 355 (i.e., the spacing between two adjacent passing regions 355) is different. For example, as shown in FIG. 7 , the beam passing member 351 may be formed with a fine mark 356-2 formed by a plurality of linear passing regions 355 arranged at a first pitch, and a fine mark 356-2 formed by a plurality of linear passing regions 355 arranged at a second pitch smaller than the first pitch. In the example shown in FIG. 7 , the plurality of fine marks 356-2 are arranged along the Y-axis direction, but the plurality of fine marks 356-2 may be formed at any position. However, the beam passing member 351 may have a single fine mark 356-2 formed thereon.

[0063] For example, as shown in FIG. 7 , a rectangular mark 356-3, which is an example of the mark 356, may be formed on the beam passing member 351. The rectangular mark 356-3 is a mark formed by a passing region 355 having a rectangular shape in a plane along the surface of the attenuation film 3512. The size of the rectangular passing region 355 forming the rectangular mark 356-3 is, for example, 0.1 μm to several tens of μm, but may be other sizes. The beam passing member 351 may be formed with a plurality of rectangular marks 356-3, each having a passing region 355 with a different size (for example, the size in at least one of the X-axis direction and the Y-axis direction). In the example shown in FIG. 7 , the plurality of rectangular marks 356-3 are arranged along the Y-axis direction, but the plurality of rectangular marks 356-3 may be formed at any position. However, a single rectangular mark 356-3 may be formed on the beam passing member 351.

[0064] For example, as shown in FIG. 7 , a cross mark 356-4, which is an example of a mark 356, may be formed on the beam passing member 351. The cross mark 356-4 is a mark formed by a plurality of linear passing regions 355, each extending along a first direction and arranged along a second direction intersecting the first direction, and a plurality of linear passing regions 355, each extending along a third direction intersecting the first direction and arranged along a fourth direction intersecting the third direction. In the example shown in FIG. 7 , the cross mark 356-4 is a mark formed by a plurality of linear passing regions 355, each extending along the X-axis direction and arranged along the Y-axis direction, and a plurality of linear passing regions 355, each extending along the Y-axis direction and arranged along the X-axis direction. In this case, the cross mark 356-4 may be considered to be a lattice-shaped mark. The width (i.e., the size in the short direction) of the linear passing regions 355 forming the cross mark 356-4 is, for example, several μm to several tens of μm, but may be other widths. The size of the cross mark 356-4 (e.g., the size in at least one of the X-axis direction and the Y-axis direction) is, for example, 0.1 mm to several mm, but may be other sizes. The beam passing member 351 may be formed with a plurality of cross marks 356-4 having different arrangement pitches of the linear passing regions 355 (i.e., the spacing between two adjacent passing regions 355). If the cross marks 356-4 are lattice-shaped marks, the number of lattices formed by the cross marks 356-4 changes when the arrangement pitch of the linear passing regions 355 changes. Therefore, the beam passing member 351 may be formed with a plurality of cross marks 356-4 having different numbers of lattices. In the example shown in FIG. 7, the plurality of cross marks 356-4 are arranged along the Y-axis direction, but the plurality of cross marks 356-4 may be formed at any position. However, the beam passing member 351 may be formed with a single cross mark 356-4.

[0065] For example, as shown in FIG. 7 , a search mark 356-5, which is an example of a mark 356, may be formed on the beam-passing member 351. The search mark 356-5 is a mark formed by two first linear passing regions 355, each extending along the fifth direction and spaced apart along a sixth direction perpendicular to the fifth direction, and a second linear passing region 355 extending along a seventh direction inclined with respect to the fifth direction (i.e., diagonally intersecting the fifth direction). In the example shown in FIG. 7 , the search mark 356-5 is a mark formed by two first linear passing regions 355, each extending along the Y-axis direction and spaced apart along the X-axis direction, and a second linear passing region 355 disposed between the two first linear passing regions 355 and extending along a direction inclined with respect to the Y-axis direction. The length (i.e., longitudinal size) of the first linear passing region 355 forming the search mark 356-5 is, for example, 0.1 mm to 1 mm, but may be any other length. The width (i.e., the size in the short direction) of the linear passage region 355 forming the search mark 356-5 is, for example, several μm, but may be other widths. The size of the search mark 356-5 (e.g., the size in at least one of the X-axis direction and the Y-axis direction) is, for example, 0.1 mm to several mm, but may be other sizes. The distance between the two first linear passage regions 355 forming the search mark 356-5 is, for example, 0.1 mm to 1 mm, but may be other distances. The angle formed between the first linear passage region 355 and the second linear passage region 355 inclined relative to the first linear passage region 355 is 10 degrees to 20 degrees (e.g., 15 degrees), but may be other angles. In the example shown in FIG. 7, multiple search marks 356-5 are formed around other marks 356 other than the search mark 356-5, but multiple search marks 356-5 may be formed in any positions.

[0066] The light receiving element 352 is a light receiving unit that can receive (e.g., detect) the processing light EL that has entered the light receiving element 352 through the passing region 355 (i.e., the opening 353) on the light receiving surface 3521. The light receiving element 352 is a light receiving unit that can receive the processing light EL that has passed through the passing region 355 (i.e., the opening 353) on the light receiving surface 3521. An example of a light receiving unit is a photoelectric converter that can photoelectrically convert the received processing light EL.

[0067] The light receiving element 352 can receive, at the light receiving surface 3521, the processing light EL that has entered the light receiving element 352 through each of the multiple passing regions 355. The light receiving surface 3521 may be formed on one photoelectric conversion surface of the photoelectric conversion element. For example, the light receiving element 352 may be able to receive, at a first portion of the light receiving surface 3521, the processing light EL that has entered the light receiving element 352 through a first passing region 355 (e.g., a passing region 355 that constitutes one slit mark 356-1). For example, the light receiving element 352 may be able to receive, at a second portion of the light receiving surface 3521, the processing light EL that has entered the light receiving element 352 through a second passing region 355 (e.g., a passing region 355 that constitutes another slit mark 356-1 different from the one slit mark 356-1). For example, the light receiving element 352 may be able to receive the processing light EL that has entered the light receiving element 352 through a third passing region 355 (for example, a passing region 355 that constitutes one fine mark 356-2) at a third portion of the light receiving surface 3521. As described above, in the first embodiment, the light receiving device 35 does not need to include multiple light receiving elements 352 corresponding to the multiple passing regions 355, respectively. The light receiving device 35 may only need to include a light receiving element 352 that is common to the multiple passing regions 355. However, the light receiving device 35 may also include multiple light receiving elements 352 corresponding to the multiple passing regions 355, respectively.

[0068] When the light-receiving element 352 receives the processing light EL through the passing region 355, the focus position of the processing light EL may be set at or near the passing region 355 of the beam passing member 351. On the other hand, when the workpiece W is processed with the processing light EL, the focus position of the processing light EL may be set at or near the surface of the workpiece W. For this reason, the control device 4 may set the focus position of the processing light EL to an appropriate position by controlling the focus change optical system 1211. In this case, the control device 4 may control the focus position of the processing light EL based on information about the distance between the surface of the stage 32 (e.g., the placement surface 321 or the outer peripheral surface 322) and the light-receiving surface 3521 (particularly, the distance in the Z-axis direction corresponding to the traveling direction of the processing light EL). For example, when switching the state of the processing system SYSa between a state in which the workpiece W is processed with the processing light EL and a state in which the light receiving element 352 receives the processing light EL through the passing area 355, the control device 4 may move the focus position of the processing light EL by an amount determined according to the distance between the surface of the above-mentioned stage 32 (e.g., the mounting surface 321 or the outer peripheral surface 322) and the light receiving surface 3521.

[0069] Considering that the workpiece W is processed by irradiation with the processing light EL, there is a possibility that at least a portion of the light-receiving device 35 may also be processed (effectively destroyed) by irradiation with the processing light EL. For this reason, the intensity of the processing light EL (e.g., the amount of energy per unit area in a plane intersecting the traveling direction of the processing light EL) may be controlled so that the intensity of the processing light EL irradiated to the light-receiving device 35 (e.g., the amount of energy per unit area on the light-receiving surface 3521 of the light-receiving element 352) is smaller than the intensity of the processing light EL irradiated to the workpiece W to process the workpiece W (e.g., the amount of energy per unit area on the surface of the workpiece W). In this case, the intensity of the processing light EL may be reduced by controlling the processing light source 11 itself, or by controlling a light-reducing member (not shown) arranged on the emission side of the processing light source 11.

[0070] The light receiving result of the light receiving element 352 includes information about the state of the processing light EL incident on the light receiving element 352. For example, the light receiving result of the light receiving element 352 includes information about the intensity of the processing light EL incident on the light receiving element 352 (specifically, the intensity in a plane intersecting the XY plane). More specifically, the light receiving result of the light receiving element 352 includes information about the intensity distribution of the processing light EL in a plane along the XY plane. The light receiving result of the light receiving element 352 is output to the control device 4.

[0071] In addition, as described above, when the mark 356 is measured by the measuring head 21, the measurement result of the mark 356 by the measuring head 21 is output to the control device 4.

[0072] The control device 4 controls the processing system SYSa (e.g., at least one of the processing device 1, the measuring device 2, and the stage device 3) based on at least one of the results of receiving the processing light EL by the light receiving element 352 and the results of measuring the mark 356 by the measuring head 21, so that the processing system SYSa can properly process the workpiece W. In other words, the processing system SYSa uses the light receiving device 35 to control the processing system SYSa (e.g., at least one of the processing device 1, the measuring device 2, and the stage device 3) so that the processing system SYSa can properly process the workpiece W. Below, a further description will be given of how the light receiving device 35 used to control the processing system SYSa is used.

[0073] (1-3) Usage of the light receiving device 35 In one embodiment, for example, the control device 4 may perform an assembly error measurement operation to measure an assembly error of the light receiving device 35 relative to the stage 32, based on the result of receiving the processing light EL through the passage area 355 that constitutes the search mark 356-5. For example, the control device 4 may perform a focus control operation to control the focus position of the processing light EL, based on the result of receiving the processing light EL through the passage area 355 that constitutes the slit mark 356-1. For example, the control device 4 may perform a B-CHK operation (baseline measurement operation) to measure the distances (so-called baselines) between the device origin AO of the processing system SYSa and each of the processing origin PO and measurement origin MO, based on the result of receiving the processing light EL through the passage area 355 that constitutes the fine mark 356-2 and the measurement result of the cross mark 356-4 by the measurement head 21. For example, based on the result of receiving the processing light EL through the passage area 355 that constitutes the slit mark 356-1, the control device 4 may perform a light state control operation to suppress the influence of variations in the state (e.g., beam profile) of the processing light EL scanning the surface of the workpiece W. For example, based on the result of receiving the processing light EL through the passage area 355 that constitutes the slit mark 356-1, the control device 4 may perform a galvanometer control operation to control the galvanometer mirror 1212 so as to reduce the influence of temperature drift, which is one of the phenomena that cause variations in the irradiation position of the processing light EL within a plane along the XY plane due to the temperature (i.e., heat) of the galvanometer mirror 1212.

[0074] The control device 4 may perform at least some of these operations (e.g., assembly error measurement operation, focus control operation, B-CHK operation, light state control operation, and galvano control operation) before the processing light EL begins to be irradiated onto the workpiece W to perform the above-mentioned removal processing. The control device 4 may perform at least some of these operations after the processing light EL has finished being irradiated onto the workpiece W to perform the above-mentioned removal processing. The control device 4 may perform at least some of these operations during at least part of the period during which the processing light EL is irradiated onto the workpiece W to perform the above-mentioned removal processing.

[0075] The assembly error measurement operation, focus control operation, B-CHK operation, optical state control operation, and galvano control operation will be explained below in order.

[0076] (1-3-1) Assembly error measurement operation First, an assembly error of the light receiving device 35 relative to the stage 32 will be described with reference to Fig. 8. Fig. 8 is a plan view showing the light receiving device 35 in which an assembly error relative to the stage 32 has occurred.

[0077] 7, the light receiving device 35 may be assembled at a position different from the ideal assembly position (i.e., the designed assembly position). For example, the light receiving device 35 may be assembled at a position away from the ideal assembly position along the X-axis direction. For example, the light receiving device 35 may be assembled at a position away from the ideal assembly position along the Y-axis direction. For example, the light receiving device 35 may be assembled at a position away from the ideal assembly position along the θZ direction (i.e., a position rotated around the Z-axis from the ideal assembly position).

[0078] To measure such an assembly error of the light receiving device 35, the control device 4 acquires the result of receiving the processing light EL through the passage area 355 that constitutes the search mark 356-5. Specifically, the control device 4 controls the stage drive system 33 to move the stage 32 to a position where the processing head 12 can irradiate one of the multiple search marks 356-5 with the processing light EL when the light receiving device 35 is assembled in the ideal assembly position. In other words, the control device 4 moves the stage 32 so that one search mark 356-5 is positioned within the processing shot area PSA. At this time, the control device 4 may move the processing head 12 in addition to or instead of the stage 32. Then, the control device 4 controls the processing head 12 to irradiate the one search mark 356-5 with the processing light EL. 9, which is a plan view showing the scanning trajectory of the processing light EL irradiated onto the search mark 356-5, the control device 4 scans the search mark 356-5 with the processing light EL along a direction intersecting the three linear passing regions 355 that form the search mark 356-5 so that the processing light EL is sequentially irradiated onto the three linear passing regions 355 that form the search mark 356-5. In other words, the irradiation position of the processing light EL on the beam passing member 351 on which the search mark 356-5 is formed (i.e., the position of the processing light EL relative to the beam passing member 351) changes along the direction in which the three linear passing regions 355 that form the search mark 356-5 are arranged. Specifically, as described above, the search mark 356-5 is formed by two first linear passing regions 355 (passing regions 355#11 and 355#12 in the example shown in FIG. 9) each extending along the Y-axis direction and spaced apart along the X-axis direction, and a second linear passing region 355 (passing region 355#2 in the example shown in FIG. 9) extending along a direction inclined with respect to the Y-axis direction. In this case, the control device 4 scans the search mark 356-5 with the processing light EL along the X-axis direction in which the passing regions 355#11, 355#2, and 355#12 are arranged, so that the processing light EL is irradiated sequentially onto the passing regions 355#11, 355#2, and 355#12.In this case, the light-receiving element 352 sequentially receives the processing light EL through the passage region 355#11, the processing light EL through the passage region 355#2, and the processing light EL through the passage region 355#12. As a result, the light-receiving result of the processing light EL acquired by the control device 4 from the light-receiving element 352 includes a light-receiving signal in which a pulse waveform corresponding to the processing light EL through the passage region 355#11, a pulse waveform corresponding to the processing light EL through the passage region 355#2, and a pulse waveform corresponding to the processing light EL through the passage region 355#12 appear in that order, as shown in FIG. 10, which is a graph showing the light-receiving result of the processing light EL through the search mark 356-5. In other words, the light-receiving result of the processing light EL acquired by the control device 4 from the light-receiving element 352 includes a light-receiving signal indicating that the intensity of the processing light EL during a period when at least a portion of the processing light EL is irradiated onto the passage region 355 is higher than the intensity of the processing light EL during a period when the processing light EL is not irradiated onto the passage region 355. Here, it is preferable to synchronize the control signal of the galvanometer mirror 1212 for scanning the processing light EL with the light receiving signal of the light receiving element 352 .

[0079] The positions of the multiple pulse waveforms included in the light receiving signal (i.e., the light receiving timing) depend on the actual assembly position of the light receiving device 35. For example, Fig. 11(a) shows the search mark 356-5 of the light receiving device 35 assembled in the ideal assembly position, Fig. 11(b) shows the search mark 356-5 of the light receiving device 35 assembled in a position different from the ideal assembly position, while Fig. 11(c) shows a light receiving signal corresponding to the result of receiving the processing light EL via the search mark 356-5 of the light receiving device 35 assembled in the ideal assembly position. Fig. 11(d) shows a light receiving signal corresponding to the result of receiving the processing light EL via the search mark 356-5 of the light receiving device 35 assembled in a position different from the ideal assembly position. 11(a) to 11(d), the positions of the multiple pulse waveforms included in the light receiving signal acquired when the light receiving device 35 is assembled in the ideal assembly position are different from the positions of the multiple pulse waveforms included in the light receiving signal acquired when the light receiving device 35 is assembled in a position other than the ideal assembly position. In other words, the intervals L1 and L2 (see FIG. 11(c)) of the multiple pulse waveforms included in the light receiving signal acquired when the light receiving device 35 is assembled in the ideal assembly position are different from the intervals L1 and L2 (see FIG. 11(d)) of the multiple pulse waveforms included in the light receiving signal acquired when the light receiving device 35 is assembled in a position other than the ideal assembly position.

[0080] Therefore, the control device 4 can calculate the amount of deviation of the actual position of the one search mark 356-5 from the ideal position of the one search mark 356-5 based on the result of receiving the processing light EL via the one search mark 356-5. For example, the control device 4 can calculate the amount of deviation of the actual position of the one search mark 356-5 from the ideal position of the one search mark 356-5 in each of the X-axis direction and the Y-axis direction. In this case, the control device 4 may calculate the amount of position deviation using the intervals L1 and L2 of multiple pulse waveforms included in the light reception signal.

[0081] The control device 4 performs the operation of acquiring the reception results of the processing light EL via the search mark 356-5 sequentially for all (or some) of the search marks 356-5 provided in the light receiving device 35. As a result, the control device 4 can calculate the amount of deviation of the actual position of each search mark 356-5 from the ideal position of each search mark 356-5. In other words, the control device 4 can calculate the amount of deviation of the actual position of each of the multiple search marks 356-5.

[0082] Thereafter, the control device 4 calculates the assembly error of the light receiving device 35 relative to the stage 32 based on the amount of deviation in the actual position of each of the multiple search marks 356-5. For example, the control device 4 may calculate the assembly error of the light receiving device 35 in each of the X-axis direction and the Y-axis direction based on the amount of deviation in the actual position of one search mark 356-5. For example, the control device 4 may calculate the assembly error of the light receiving device 35 in each of the X-axis direction and the Y-axis direction and the assembly error of the light receiving device 35 around the Z-axis based on the amount of deviation in the actual position of two or more search marks 356-5. Furthermore, the control device 4 may calculate the assembly error of the light receiving device 35 in each of the X-axis direction and the Y-axis direction, and the assembly error of the light receiving device 35 around the Z-axis, based on the amount of deviation of the actual position of at least one of the slit mark 356-1, the fine mark 356-2, the rectangular mark 356-3, and the cross mark 356-4, in addition to or instead of the amount of deviation of the actual position of the search mark 356-5.

[0083] When the assembly error of the light-receiving device 35 is calculated, the control device 4 controls the processing system SYSa (for example, at least one of the processing device 1, the measuring device 2, and the stage device 3) based on information about the calculated assembly error. For example, the control device 4 may control at least one of the processing device 1 and the stage device 3 based on the information about the calculated assembly error so that even if the assembly error is not zero, the processing light EL is irradiated to the light-receiving device 35 in the same way as when the assembly error is zero. For example, the control device 4 may control at least one of the processing device 1 and the stage device 3 based on the information about the calculated assembly error so that even if the assembly error is not zero, the measuring device 2 measures the light-receiving device 35 (specifically, the mark 356 formed on the light-receiving device 35) in the same way as when the assembly error is zero. Typically, at least one of the processing head 12, the measuring head 21, and the stage 32 moves to cancel out the assembly error. As a result, even if an assembly error of the light-receiving device 35 occurs, the processing system SYSa can process the workpiece W in the same way as when no assembly error of the light-receiving device 35 occurs. In other words, the machining system SYSa can machine the workpiece W appropriately.

[0084] (1-3-2) Focus control operation Next, the focus control operation will be described with reference to Fig. 12(a) to Fig. 12(c). Fig. 12(a) is a cross-sectional view showing how the processing head 12 irradiates the light-receiving device 35 with the processing light EL to perform the focus control operation, Fig. 12(b) is a plan view showing how the processing head 12 irradiates the light-receiving device 35 with the processing light EL to perform the focus control operation, and Fig. 12(c) is a graph showing the results of reception of the processing light EL by the light-receiving element 352 provided in the light-receiving device 35.

[0085] As shown in FIGS. 12(a) and 12(b), to perform focus control operation, the control device 4 acquires the result of receiving the processing light EL through the passage area 355 that constitutes the slit mark 356-1. Specifically, the control device 4 controls the stage drive system 33 to move the stage 32 to a position where the processing head 12 can irradiate one of the multiple slit marks 356-1 with the processing light EL. That is, the control device 4 moves the stage 32 so that the one slit mark 356-1 is positioned within the processing shot area PSA. At this time, the control device 4 may move the processing head 12 in addition to or instead of the stage 32. Then, the control device 4 causes the processing head 12 to irradiate the one slit mark 356-1 with the processing light EL.

[0086] At this time, under the control of the control device 4, the processing head 12 deflects the processing light EL using the galvanometer mirror 1212, thereby causing the processing light EL to scan at least a portion of the surface of the stage 32 (specifically, a surface including a portion where one slit mark 356-1 is formed). In particular, the processing head 12 causes the processing light EL to scan at least a portion of the surface of the stage 32 so that the processing light EL (more specifically, the target irradiation area EA of the processing light EL) crosses the passage area 355 that forms one slit mark 356-1 in a plane along the XY plane. In particular, the processing head 12 may cause the processing light EL to scan at least a portion of the surface of the stage 32 so that the processing light EL crosses the slit mark 356-1 along the short direction of the linear passage area 355 that forms the slit mark 356-1 in a plane along the XY plane. In the example shown in Figures 12(a) and 12(b), the processing head 12 causes the processing light EL to scan at least a portion of the surface of the stage 32 so that the processing light EL crosses a slit mark 356-1 formed by a passing area 355 extending along the X-axis direction in a plane along the XY plane, along the Y-axis direction.

[0087] The stage 32 does not need to move while the processing light EL is scanning at least a portion of the surface of the stage 32. In other words, while the processing light EL is scanning at least a portion of the surface of the stage 32, the positional relationship between the processing device 1 and the stage 32 (particularly, the direction along the XY plane) may be fixed. As a result, the processing light EL scans at least a portion of the surface of the stage 32 at a constant scanning speed determined according to the characteristics of the galvanometer mirror 1212.

[0088] As a result, the processing light EL is irradiated onto one slit mark 356-1 at a certain timing while the processing light EL is scanning at least a portion of the surface of the stage 32. In other words, the processing light EL is received by the light-receiving element 352 at a certain timing while the processing light EL is scanning at least a portion of the surface of the stage 32.

[0089] As shown in FIG. 12(c), the control device 4 acquires, as a light reception result of the processing light EL, a light reception signal indicating that the intensity of the processing light EL is higher during a period when at least a portion of the processing light EL is irradiated onto the passage region 355 constituting the slit mark 356-1 compared to the intensity of the processing light EL during a period when the processing light EL is not irradiated onto the passage region 355. The time (light reception timing) on ​​the horizontal axis of FIG. 12(c) can be interpreted as the relative position between the processing light EL and the stage 32 in the scanning direction (Y-axis direction). The speed at which the processing light EL scans at least a portion of the surface of the stage 32 does not need to be constant. In this case, the drive amount (angle) of the galvanometer mirror 1212 can be interpreted as the relative position between the processing light EL and the stage 32 in the scanning direction (Y-axis direction).

[0090] The control device 4 can calculate the spot diameter of the processing light EL (i.e., the spot diameter on the surface of the workpiece W) based on the light-receiving signal. Specifically, the control device 4 can identify, from the light-receiving signal, the time during which the intensity of the processing light EL is greater than a predetermined value (i.e., the time during which at least a portion of the processing light EL is irradiated onto the passage area 355). In this case, the control device 4 can calculate the spot diameter of the processing light EL based on the identified time and the scanning speed of the processing light EL. At this time, since the light-receiving signal is multiplied by a moving average corresponding to the slit width (the width of the light passage portion of the slit mark 356-1 in the scanning direction), the control device 4 may calculate the spot diameter taking this amount (e.g., the influence of the slit width) into account. For example, the control device 4 may approximate the waveform of the light-receiving signal with a Gaussian distribution taking the slit width into account, and calculate the beam diameter based on the approximate curve obtained by the approximation.

[0091] Thereafter, the control device 4 may control the focus position of the processing light EL so that the calculated spot diameter matches the spot diameter set as a processing condition (for example, the spot diameter set by the initial setting operation described above). In this case, if the focus position is changed, the control device 4 may control the focus change optical system 1211 in the processing device 1 so that the light receiving device 35 detects the processing light EL again to confirm whether the changed focus position is appropriate. In this case, the control device 4 may determine whether the spot diameter recalculated based on the re-reception result of the light receiving element 352 matches the spot diameter set as a processing condition. As a result, the processing system SYsa can process the workpiece W using the processing light EL whose focus position is appropriately set. Therefore, the processing system SYSa can appropriately process the workpiece W. Note that if the telecentricity of the irradiation optical system 121 is good, the control device 4 may control the head drive system 13 of the processing device 1 so that the light receiving device 35 detects the processing light EL again to confirm whether the changed focus position is appropriate.

[0092] If multiple slit marks 356-1 with different angles relative to the X-axis and Y-axis are formed on the beam passing member 351, the control device 4 may calculate the ellipticity of the spot of the processing light EL (for example, the ratio (difference) between the spot size in the X-axis direction and the spot size in the Y-axis direction) based on the results of receiving the processing light EL through at least two slit marks 356-1. If the ellipticity of the spot of the processing light EL is greater than a tolerance, the irradiation optical system 121 may be provided with an optical element for controlling (typically reducing) the ellipticity. An example of an optical element for controlling the ellipticity is an optical element (for example, at least one of a toric lens and a cylindrical lens) with different refractive powers in two orthogonal directions. In this case, the ellipticity may be adjusted by rotating the optical element around the optical axis, or by changing the spacing between multiple optical elements.

[0093] In the above description, the light-receiving device 35 (particularly the slit mark 356-1 and the light-receiving element 352) used to perform the focus control operation may be considered to constitute a so-called slit-type beam profiler. In other words, the control device 4 may be considered to perform the focus control operation using a slit-type beam profiler. However, the control device 4 may perform the focus control operation using a beam profiler other than the slit-type beam profiler. For example, the control device 4 may perform the focus control operation by calculating the spot diameter of the processing light EL using a knife-edge-type beam profiler composed of the rectangular mark 356-3 and the light-receiving element 352. For example, if the rectangular mark 356-3 is formed so small that it can be considered a pinhole, the control device 4 may perform the focus control operation by calculating the spot diameter of the processing light EL using a pinhole-type beam profiler composed of the rectangular mark 356-3 and the light-receiving element 352.

[0094] (1-3-3)B-CHK operation Next, the B-CHK operation will be described. As described above, the B-CHK operation is an operation for measuring the distance between the device origin AO of the machining system SYSa and each of the machining origin PO and measurement origin MO.

[0095] When performing the B-CHK operation, the control device 4 sets an apparatus origin AO corresponding to the origin of a stage coordinate system used to control the position of the stage 32. To set the apparatus origin AO, the control device 4 controls the measurement head 21 to measure a reference mark BM formed on the stage 32. The reference mark BM is a mark formed on the stage 32 to define the apparatus origin AO. For example, as shown in FIG. 13, which is a plan view showing the stage 32 on which the reference mark BM is formed, the reference mark BM may be formed on the outer circumferential surface 322 of the stage 32. However, the reference mark BM may be formed on a portion other than the outer circumferential surface 322 of the stage 32. For example, the reference mark BM may be formed on the mounting surface 321 of the stage 32. Furthermore, although multiple (two in the example shown in FIG. 3) reference marks BM are formed on the stage 32, a single reference mark BM may also be formed. Note that when multiple reference marks BM are formed on the stage 32, the control device 4 can determine the rotational position of the stage 32 around the Z axis based on the measurement results of the reference mark BM.

[0096] In the first embodiment, the apparatus origin AO is set at a position having a predetermined first positional relationship with respect to the reference mark BM. For example, when the apparatus origin AO is set at the center of the stage 32, the reference mark BM is formed at a position having a predetermined first positional relationship with respect to the center of the stage 32. In the example shown in FIG. 13 , the apparatus origin AO is set to a position on a line equidistant from the two reference marks BM and a predetermined amount toward the +X side from the midpoint of the two reference marks BM. In this case, the control device 4 acquires from the position measurement device 34 the position of the stage 32 when the measurement head 21 measures each reference mark BM. For this reason, the control device 4 may function as an acquisition device that acquires information about the position of the stage 32. Thereafter, the control device 4 may set the apparatus origin AO to a position having a predetermined first positional relationship with the acquired position of the stage 32. Note that the reference mark BM itself may indicate the apparatus origin AO. In this case, the position of the stage 32 when the measurement head 21 measures the reference mark BM becomes the apparatus origin AO.

[0097] The reference mark BM may be formed at a position having a predetermined second positional relationship with respect to the light receiving device 35 (particularly, the passing area 355 of the light receiving device 35). In this case, it can be said that the device origin AO is essentially set at a position having a predetermined third positional relationship with respect to the light receiving device 35. When the reference mark BM is formed at a position having the predetermined second positional relationship with respect to the light receiving device 35, there is a small possibility that the positional relationships between the reference mark BM, the device origin AO, and the light receiving device 35 will change. As a result, the distance between the device origin AO and the measurement origin MO and the distance between the device origin AO and the processing origin PO can be calculated with high accuracy.

[0098] After the equipment origin AO is set, the control device 4 calculates the distance between the equipment origin AO and the processing origin PO and the distance between the equipment origin AO and the measurement origin MO. The processing origin PO corresponds to the position of the stage 32 when the center of the processing shot area PSA and the center of the stage 32 coincide and the focus position of the processing light EL coincides with the surface of the stage 32. The measurement origin MO corresponds to the position of the stage 32 when the center of the measurement shot area MSA coincides with the center of the stage 32 and the focus position of the measurement light ML coincides with the surface of the stage 32. In the following description, the distance between the equipment origin AO and the processing origin PO is referred to as the "processing baseline BLprc," and the distance between the equipment origin AO and the measurement origin MO is referred to as the "measurement baseline BLmsr." Examples of the processing baseline BLprc and the measurement baseline BLmsr are shown in FIGS. 14(a) and 14(b). 14(a) and 14(b), the machining baseline BLprc may include a component ΔXprc corresponding to the distance between the device origin AO and the machining origin PO in the X-axis direction, a component ΔYprc corresponding to the distance between the device origin AO and the machining origin PO in the Y-axis direction, and a component ΔZprc corresponding to the distance between the device origin AO and the machining origin PO in the Z-axis direction. The measurement baseline BLmsr may include a component ΔXmsr corresponding to the distance between the device origin AO and the measurement origin MO in the X-axis direction, a component ΔYmsr corresponding to the distance between the device origin AO and the measurement origin MO in the Y-axis direction, and a component ΔZmsr corresponding to the distance between the device origin AO and the measurement origin MO in the Z-axis direction.

[0099] The machining baseline BLprc may include the sum of a component corresponding to the design distance between the device origin AO and the machining origin PO in the X-axis direction and a component corresponding to an error in the X-axis direction, a sum of a component corresponding to the design distance between the device origin AO and the machining origin PO in the Y-axis direction and a component corresponding to an error in the Y-axis direction, and a sum of a component corresponding to the design distance between the device origin AO and the machining origin PO in the Z-axis direction and a component corresponding to an error in the Z-axis direction. Furthermore, the measurement baseline BLmsr may include the sum of a component corresponding to the design distance between the device origin AO and the measurement origin MO in the X-axis direction and a component corresponding to an error in the X-axis direction, a sum of a component corresponding to the design distance between the device origin AO and the measurement origin MO in the Y-axis direction and a component corresponding to an error in the Y-axis direction, and a sum of a component corresponding to the design distance between the device origin AO and the measurement origin MO in the Z-axis direction and a component corresponding to an error in the Z-axis direction.

[0100] The processing origin PO and the measurement origin MO do not have to be set at the center of the stage 32. The processing origin PO and the measurement origin MO may be set at a position different from the center of the stage 32. The processing origin PO and the measurement origin MO may be set at any position.

[0101] To calculate the measurement baseline BLmsr, the control device 4 acquires the measurement results of the cross mark 356-4 measured by the measurement head 21. Specifically, the control device 4 controls the stage drive system 33 to move the stage 32 along both the X-axis and the Y-axis so that the reference of the light receiving device 35 is located at the center of the measurement shot area MSA (including the vicinity of the center (a range close enough to the center that it can be identified with the center); the same applies below). For example, the control device 4 moves the stage 32 so that one cross mark 356-4 that can be used as the reference of the light receiving device 35 is located at the center of the measurement shot area MSA. Alternatively, the control device 4 may move the stage 32 so that an arbitrary mark of the light receiving device 35 that can be used as the reference of the light receiving device 35 (this mark may have a predetermined (known) positional relationship with respect to the passage area 355) is located at the center of the measurement shot area MSA. In this case, the control device 4 may move the stage 32 so that at least one cross mark 356-4 is included in the measurement shot area MSA. Furthermore, the control device 4 moves the stage 32 along the Z-axis direction so that the focus position of the measurement light ML coincides with the surface of the stage 32. Thereafter, the measurement head 21 measures one cross mark 356-4. Furthermore, the control device 4 acquires from the position measurement device 34 the position of the stage 32 at the time when the measurement head 21 measured the one cross mark 356-4. The acquired position of the stage 32 corresponds to the position of the measurement origin MO. Therefore, the control device 4 can calculate the distance between the position of the stage 32 at the time when the measurement head 21 measured the one cross mark 356-4 and the device origin AO, and calculate the measurement baseline BLmsr based on the calculated distance.

[0102] It should be noted that the control device 4 may calculate the measurement baseline BLmsr in each of the X-axis direction and the Y-axis direction, but may not necessarily calculate the measurement baseline BLmsr in the Z-axis direction.

[0103] After the measurement baseline BLmsr is calculated, the control device 4 may move the stage 32 (and, if necessary, the measurement head 21) based on the calculated measurement baseline BLmsr while the measurement head 21 is measuring the workpiece W, etc. In other words, the control device 4 may control the position of the stage 32 (and, if necessary, the measurement head 21) based on the calculated measurement baseline BLmsr while the measurement head 21 is measuring the workpiece W, etc. As a result, the measurement shot area MSA can be set to an appropriate position in the stage coordinate system based on the apparatus origin AO. In other words, the machining system SYSa can properly machine the workpiece W based on the appropriate measurement results of the workpiece W by the measurement device 2.

[0104] However, the measurement baseline BLmsr may fluctuate over time due to positional deviation of at least one of the measurement head 21 and the stage 32. In other words, the measurement baseline BLmsr at a first timing may differ from the measurement baseline BLmsr at a second timing different from the first timing (for example, after the first timing). For this reason, the control device 4 may perform the operation of calculating the measurement baseline BLmsr periodically or at random timing. Note that when managing the measurement baseline BLmsr, the control device 4 may separately manage the amount of deviation from the design value (corresponding to an assembly error) and the amount of variation due to changes over time.

[0105] Specifically, after the measurement baseline BLmsr is calculated at a first timing, the control device 4 moves the stage 32 at a second timing so that the measurement head 21 can measure one cross mark 356-4 (specifically, the one cross mark 356-4 measured to calculate the measurement baseline BLmsr at the first timing). Furthermore, the control device 4 acquires from the position measurement device 34 the position of the stage 32 at the time when the measurement head 21 measured the one cross mark 356-4 (that is, the time when the measurement head 21 became able to measure the one cross mark 356-4). Here, if the measurement baseline BLmsr at the second timing is the same as the measurement baseline BLmsr at the first timing, the position of the stage 32 at the time when the measurement head 21 measured the one cross mark 356-4 at the second timing should match the position of the stage 32 at the time when the measurement head 21 measured the one cross mark 356-4 at the first timing. On the other hand, if the measurement baseline BLmsr at the second timing is different from the measurement baseline BLmsr at the first timing, the position of the stage 32 at the time when the measurement head 21 measures the one cross mark 356-4 at the second timing should not match the position of the stage 32 at the time when the measurement head 21 measures the one cross mark 356-4 at the first timing. Therefore, the control device 4 can calculate the amount of fluctuation of the measurement baseline BLmsr (that is, the amount of fluctuation with the measurement baseline BLmsr at the first timing as the reference position) based on the position of the stage 32 at the time when the measurement head 21 measures the one cross mark 356-4 at the second timing and the position of the stage 32 at the time when the measurement head 21 measures the one cross mark 356-4 at the first timing. In other words, the control device 4 can calculate the amount of fluctuation in the position of the stage 32 when the measurement head 21 becomes able to measure one cross mark 356-4 based on the position of the stage 32 at the time when the measurement head 21 measures one cross mark 356-4 at the second timing and the position of the stage 32 at the time when the measurement head 21 measures one cross mark 356-4 at the first timing.Therefore, the control device 4 can calculate the measurement baseline BLmsr at the second timing based on the measurement baseline BLmsr calculated at the first timing and the amount of fluctuation of the measurement baseline BLmsr calculated at the second timing. That is, the control device 4 can update the measurement baseline BLmsr. When the measurement baseline BLmsr is updated, the control device 4 moves at least one of the measuring head 21 and the stage 32 based on the updated measurement baseline BLmsr.

[0106] Alternatively, at the second timing, the control device 4 may move the measurement head 21 based on the measurement baseline BLmsr calculated at the first timing so that the reference of the light receiving device 35 (e.g., one cross mark 356-4) is located at the center of the measurement shot area MSA and the focus position of the measurement light ML coincides with the surface of the stage 32. The measurement head 21 may then measure the one cross mark 356-4. Here, if the measurement baseline BLmsr at the first timing is different from the measurement baseline BLmsr at the second timing, the measurement result of the cross mark 356-4 at the first timing will not match the measurement result of the same cross mark 356-4 at the second timing. This is because, due to fluctuations in the measurement baseline BLmsr, the stage 32, which moves based on the measurement baseline BLmsr calculated at the first timing, may not be able to move so that the reference of the light receiving device 35 (e.g., one cross mark 356-4) is located at the center of the measurement shot area MSA at the second timing. Therefore, the control device 4 may calculate the amount of fluctuation of the measurement baseline BLmsr (i.e., the amount of fluctuation from the measurement baseline BLmsr at the first timing as a reference position) by comparing the measurement result of the cross mark 356-4 at the first timing with the measurement result of the same cross mark 356-4 at the second timing. In other words, the control device 4 may update the measurement baseline BLmsr based on the measurement result of the cross mark 356-4 at the first timing and the measurement result of the same cross mark 356-4 at the second timing.

[0107] Next, to calculate the processing baseline BLprc, the control device 4 acquires the result of reception of the processing light EL by the light-receiving element 352 via the passage area 355 that constitutes the fine mark 356-2. Specifically, the control device 4 controls the stage drive system 33 to move the stage 32 along both the X-axis and the Y-axis so that the reference of the light-receiving device 35 is located at the center of the processing shot area PSA (including the vicinity of the center (a range close enough to the center that it can be identified with the center); the same applies below). For example, the control device 4 moves the stage 32 so that one fine mark 356-2 that can be used as the reference of the light-receiving device 35 is located at the center of the processing shot area PSA. Alternatively, the control device 4 may move the stage 32 so that an arbitrary mark of the light-receiving device 35 that can be used as the reference of the light-receiving device 35 (this mark may have a predetermined positional relationship with the passage area 355) is located at the center of the processing shot area PSA. Furthermore, the control device 4 controls the head driving mechanism 13 to move the processing head 12 along the Z-axis direction so that the focus position of the processing light EL coincides with the surface of the stage 32. Thereafter, the processing head 12 irradiates one fine mark 356-2 with the processing light EL.

[0108] At this time, under the control of the control device 4, the processing head 12 deflects the processing light EL using the galvanometer mirror 1212, causing the processing light EL to scan at least a portion of the surface of the stage 32 (specifically, the surface including the portion where one fine mark 356-2 is formed). In particular, the processing head 12 causes the processing light EL to scan at least a portion of the surface of the stage 32 so that the processing light EL (more specifically, the target irradiation area EA of the processing light EL) sequentially crosses the multiple passing regions 355 that make up one fine mark 356-2 within a plane along the XY plane. In particular, the processing head 12 may cause the processing light EL to scan at least a portion of the surface of the stage 32 so that the processing light EL sequentially crosses the multiple passing regions 355 along the short direction of the multiple linear passing regions 355 that make up the fine mark 356-2 within a plane along the XY plane.

[0109] When the processing light EL is irradiated onto the fine mark 356-2, the control device 4 may set the spot diameter of the processing light EL on the surface of the beam passing member 351 on which the fine mark 356-2 is formed based on the arrangement pitch of the multiple passing regions 355 that make up the fine mark 356-2 (i.e., the spacing or distance between two adjacent passing regions 355). The spot diameter refers to the size of the area on the surface of the beam passing member 351 onto which the processing light EL is irradiated. For example, as shown in FIG. 15, which is a plan view showing the relationship between the spot diameter of the processing light EL and the fine mark 356-2, the control device 4 may set the spot diameter SPr of the processing light EL in the direction in which the multiple passing regions 355 that make up the fine mark 356-2 are arranged (the Y-axis direction in the example shown in FIG. 15) so that the spot diameter SPr is equal to or smaller than the arrangement pitch PT of the passing regions 355. In this case, the processing light EL is not irradiated onto two or more passing regions 355 simultaneously. Alternatively, for example, as shown in Fig. 16, which is a plan view showing the relationship between the spot diameter of the processing light EL and the fine mark 356-2, the control device 4 may set the spot diameter SPr of the processing light EL so that the spot diameter SPr of the processing light EL is larger than the arrangement pitch PT of the passage regions 355 in the direction in which the multiple passage regions 355 that make up the fine mark 356-2 are arranged (the Y-axis direction in the example shown in Fig. 16). In this case, the processing light EL may be simultaneously irradiated onto two or more passage regions 355. As a result, during at least a portion of the period in which the processing light EL reaches the light-receiving element 352 through one passage region 355 that makes up the fine mark 356-2 (i.e., the irradiation period), the processing light EL may reach the light-receiving element 352 through another passage region 355 that makes up the fine mark 356-2 different from the one passage region 355 (i.e., be irradiated). When the processing light EL is pulsed light, during at least a portion of the period during which a series of pulsed light passes through one passing area 355 constituting the fine mark 356-2 and reaches the light receiving element 352, the same series of pulsed light passes through another passing area 355 constituting the fine mark 356-2 and reaches (i.e., is irradiated with) the light receiving element 352.

[0110] In addition, when multiple fine marks 356-2 with different arrangement pitches are formed in multiple linear passing areas 355, the restriction imposed by the spot diameter SPr when performing the B-CHK operation is reduced. In other words, the processing system SYSa can perform the B-CHK operation without being restricted by the spot diameter SPr.

[0111] The arrangement pitch of the multiple passing areas 355 that make up the fine mark 356-2 (i.e., the interval or distance between two adjacent passing areas 355) may be set based on the spot diameter of the processing light EL on the surface of the beam passing member 351 on which the fine mark 356-2 is formed. This spot diameter may be an actually measured value or a design value.

[0112] The control device 4 acquires the position of the stage 32 at the time when the light-receiving element 352 receives the processing light EL from the position measurement device 34. The acquired position of the stage 32 corresponds to the position of the processing origin PO. Therefore, the control device 4 can calculate the distance between the device origin AO and the position of the stage 32 at the time when the light-receiving element 352 receives the processing light EL via one fine mark 356-2, and calculate the processing baseline BLprc based on the calculated distance.

[0113] After the machining baseline BLprc is calculated, the control device 4 may move the stage 32 (and, if necessary, the machining head 12) based on the calculated machining baseline BLprc while the machining head 12 is machining the workpiece W or the like. In other words, the control device 4 may control the position of the stage 32 (and, if necessary, the machining head 12) based on the calculated machining baseline BLprc while the machining head 12 is machining the workpiece W or the like. As a result, the machining shot area PSA can be set to an appropriate position in the stage coordinate system based on the device origin AO. In other words, the machining system SYSa can properly machine the workpiece W.

[0114] However, the machining baseline BLprc may fluctuate over time due to positional deviation of at least one of the machining head 12 and the stage 32. In other words, the machining baseline BLprc at the third timing may differ from the machining baseline BLprc at a fourth timing different from the third timing (for example, after the third timing). For this reason, the control device 4 may perform an operation to calculate the machining baseline BLprc periodically or at random timings.

[0115] Specifically, after the processing baseline BLprc is calculated at the third timing, the control device 4 moves the stage 32 at the fourth timing so that the processing head 12 can irradiate one fine mark 356-2 with the processing light EL (specifically, one fine mark 356-2 that was irradiated with the processing light EL to calculate the processing baseline BLprc at the third timing). Furthermore, the control device 4 acquires from the position measurement device 34 the position of the stage 32 at the time when the light-receiving element 352 receives the processing light EL through the one fine mark 356-2 (that is, the time when the processing head 12 can irradiate the one fine mark 356-2 with the processing light EL). Here, if the processing baseline BLprc at the fourth timing is the same as the processing baseline BLprc at the third timing, the position of the stage 32 at the time when the light-receiving element 352 receives the processing light EL through the one fine mark 356-2 at the fourth timing should match the position of the stage 32 at the time when the light-receiving element 352 receives the processing light EL through the one fine mark 356-2 at the third timing. On the other hand, if the processing baseline BLprc at the fourth timing is different from the processing baseline BLprc at the third timing, the position of the stage 32 at the time when the light-receiving element 352 receives the processing light EL through the one fine mark 356-2 at the fourth timing should not match the position of the stage 32 at the time when the light-receiving element 352 receives the processing light EL through the one fine mark 356-2 at the third timing. Therefore, the control device 4 can calculate the amount of fluctuation of the processing baseline BLprc (i.e., the amount of fluctuation from the processing baseline BLprc at the third timing as the reference position) based on the position of the stage 32 at the time when the light receiving element 352 receives the processing light EL through one fine mark 356-2 at the fourth timing and the position of the stage 32 at the time when the light receiving element 352 receives the processing light EL through one fine mark 356-2 at the third timing.That is, the control device 4 can calculate the amount of fluctuation in the position of the stage 32 when the processing head 12 can irradiate the one fine mark 356-2 with the processing light EL based on the position of the stage 32 at the time when the light-receiving element 352 receives the processing light EL through the one fine mark 356-2 at the fourth timing and the position of the stage 32 at the time when the light-receiving element 352 receives the processing light EL through the one fine mark 356-2 at the third timing. Therefore, the control device 4 can calculate the processing baseline BLprc at the fourth timing based on the processing baseline BLprc calculated at the third timing and the amount of fluctuation in the processing baseline BLprc calculated at the fourth timing. That is, the control device 4 can update the processing baseline BLprc. When the processing baseline BLprc is updated, the control device 4 moves at least one of the processing head 12 and the stage 32 based on the updated processing baseline BLprc.

[0116] Alternatively, at the fourth timing, the control device 4 may move the processing head 12 based on the processing baseline BLprc calculated at the third timing so that the reference of the light receiving device 35 (e.g., one fine mark 356-2) is positioned at the center of the processing shot area PSA and the focus position of the processing light EL coincides with the surface of the stage 32. The processing head 12 may then irradiate one fine mark 356-2 with the processing light EL. Here, if the processing baseline BLprc at the third timing is different from the processing baseline BLprc at the fourth timing, the result of receiving the processing light EL via the fine mark 356-2 at the third timing will not coincide with the result of receiving the processing light EL via the same fine mark 356-2 at the fourth timing. This is because, due to fluctuations in the processing baseline BLprc, the stage 32, which moves based on the processing baseline BLprc calculated at the third timing, may not be able to move so that the reference of the light-receiving device 35 (e.g., one fine mark 356-2) is positioned at the center of the processing shot area PSA at the fourth timing. For this reason, the control device 4 may calculate the amount of fluctuation in the processing baseline BLprc (i.e., the amount of fluctuation relative to the processing baseline BLprc at the third timing as the reference position) by comparing the result of receiving the processing light EL through the fine mark 356-2 at the third timing with the result of receiving the processing light EL through the same fine mark 356-2 at the fourth timing. In other words, the control device 4 may update the processing baseline BLprc based on the result of receiving the processing light EL through the fine mark 356-2 at the third timing and the result of receiving the processing light EL through the same fine mark 356-2 at the fourth timing.

[0117] In the above description, the measurement head 21 measures the cross mark 356-4 in the B-CHK operation. However, the measurement head 21 may measure a mark 356 other than the cross mark 356-4. In other words, the measurement baseline BLmsr may be calculated based on the measurement result of a mark 356 other than the cross mark 356-4.

[0118] In the above description, in the B-CHK operation, the processing head 12 irradiates the processing light EL onto the passing area 355 that forms the fine mark 356-2. However, the processing head 12 may also irradiate the processing light EL onto the passing area 355 that forms a mark 356 different from the fine mark 356-2. In other words, the processing baseline BLprc may be calculated based on the result of receiving the processing light EL via a mark 356 different from the fine mark 356-2.

[0119] In the above description, the operation of calculating the measurement baseline BLmsr at the first and second timings and the operation of calculating the processing baseline BLprc at the third and fourth timings may be performed in any order. For example, the processing system SYSa may perform the operation of calculating the measurement baseline BLmsr at the first and second timings, and then the operation of calculating the processing baseline BLprc at the third and fourth timings. For example, the processing system SYSa may perform the operation of calculating the processing baseline BLprc at the third and fourth timings, and then the operation of calculating the measurement baseline BLmsr at the first and second timings.

[0120] (1-3-4) Light state control operation Next, the light state control operation will be described. First, the technical reason for performing the light state control operation will be described with reference to Fig. 17. Fig. 17 is a plan view schematically showing the spot diameter of the processing light EL at each position on the surface of the workpiece W when the processing light EL is deflected by the galvanometer mirror 1212 and displaced by the fθ lens 1213 and scans the surface of the workpiece W.

[0121] 17, the surface portion of the workpiece W included in the processing shot area PSA is scanned with the processing light EL by deflection of the processing light EL by the galvanometer mirror 1212. In this case, a state in which the state of the processing light EL is the same at every position in the processing shot area PSA is an example of an ideal state in terms of highly accurate processing of the workpiece W. For example, within the processing shot area PSA, a state in which the state of the processing light EL irradiated at position P#1, the state of the processing light EL irradiated at position P#2, the state of the processing light EL irradiated at position P#3, the state of the processing light EL irradiated at position P#4, the state of the processing light EL irradiated at position P#5, the state of the processing light EL irradiated at position P#6, the state of the processing light EL irradiated at position P#7, the state of the processing light EL irradiated at position P#8, and the state of the processing light EL irradiated at position P#9 are all the same is an example of an ideal state.

[0122] However, in reality, as shown in FIG. 17, the state of the processing light EL irradiated at a certain position in the processing shot area PSA may not be the same as the state of the processing light EL irradiated at another position within the processing shot area PSA. In other words, the state of the processing light EL may vary depending on the position within the processing shot area PSA at which the processing light EL is irradiated. Note that FIG. 17 shows an example in which the spot diameter of the processing light EL irradiated at a certain position in the processing shot area PSA is not the same as the spot diameter of the processing light EL irradiated at another position within the processing shot area PSA. One of the reasons for this is at least one of the characteristics of the galvanometer mirror 1212 (for example, at least one of the drive characteristics, reflectance characteristics, and assembly error) and the characteristics of the fθ lens 1213 (typically at least one of the aberration, transmittance distribution, and assembly error).

[0123] Therefore, the control device 4 performs an optical state control operation to change the state of the processing light EL in synchronization with the scanning of the processing light EL so that the difference between the state of the processing light EL irradiated at a certain position in the processing shot area PSA and the state of the processing light EL irradiated at another position within the processing shot area PSA becomes smaller compared to when the optical state control operation is not performed.

[0124] As part of the light state control operation, the control device 4 first performs a state detection operation to detect the state of the processing light EL irradiated to each of multiple positions within the processing shot area PSA using the light receiving device 35. To perform the state detection operation, the stage 32 and / or the processing head 12 moves so that the light receiving device 35 (particularly, the passing area 355 that forms the slit mark 356-1) is located within the processing shot area PSA, as shown in FIG. 18(a), a cross-sectional view showing the positional relationship between the processing head 12 and the light receiving device 35 during the state detection operation, and FIG. 18(b), a plan view showing the positional relationship between the processing head 12 and the light receiving device 35 during the state detection operation. In other words, the control device 4 changes the positional relationship between the processing head 12 and the light receiving device 35 in a plane along the XY plane (more specifically, the positional relationship between the processing shot area PSA and the slit mark 356-1) so that the slit mark 356-1 is located within the processing shot area PSA. As a result, the slit mark 356-1 is positioned at the first position DTP#1 within the processing shot area PSA. Then, the processing head 12 scans the surface portion of the stage 32 included in the processing shot area PSA with the processing light EL. As a result, the light-receiving element 352 receives the processing light EL at the timing when the processing light EL crosses the slit mark 356-1 positioned at the first position DTP#1. That is, the processing light EL is irradiated onto the slit mark 356-1 positioned at the first position at the timing when the displacement amount (in other words, the deflection angle) of the processing light EL becomes the first displacement amount, and the light-receiving element 352 receives the processing light EL. Therefore, the control device 4 acquires information about the state of the processing light EL irradiated to the first position DTP#1 within the processing shot area PSA from the light-receiving element 352. That is, the control device 4 acquires information about the state of the processing light EL when the displacement amount becomes the first displacement amount from the light-receiving element 352. Furthermore, when the light receiving element 352 receives the processing light EL, the control device 4 also acquires, from the position measurement device 34, information relating to the position of the stage 32 at the time when the light receiving element 352 receives the processing light EL. Since the light receiving device 35 is disposed on the stage 32, the information relating to the position of the stage 32 includes information relating to the position of the light receiving device 35 (in particular, the position of the slit mark 356-1).

[0125] Thereafter, as shown in FIG. 19(a), a cross-sectional view showing the positional relationship between the processing head 12 and the light-receiving device 35 during the state detection operation, and FIG. 19(b), a plan view showing the positional relationship between the processing head 12 and the light-receiving device 35 during the state detection operation, the stage 32 and / or the processing head 12 moves so that the slit mark 356-1 is positioned in a position within the processing shot area PSA where the light-receiving device 35 has not yet received the processing light EL. That is, the control device 4 changes the positional relationship between the processing head 12 and the light-receiving device 35 within the XY plane, thereby changing the positional relationship between the processing shot area PSA and the slit mark 356-1 within the XY plane. As a result, the slit mark 356-1 is positioned at a second position within the processing shot area PSA. Then, the processing head 12 scans the surface portion of the stage 32 included in the processing shot area PSA with the processing light EL. As a result, the light-receiving element 352 receives the processing light EL at the timing when the processing light EL crosses the slit mark 356-1 located at the second position. In other words, the processing light EL is irradiated onto the slit mark 356-1 located at the second position at the timing when the displacement amount of the processing light EL becomes the second displacement amount, and the light-receiving element 352 detects the processing light EL. Therefore, the control device 4 acquires information about the state of the processing light EL irradiated onto the second position in the processing shot area PSA from the light-receiving element 352. In other words, the control device 4 acquires information about the state of the processing light EL when the displacement amount becomes the second displacement amount from the light-receiving element 352. At this time, the control device 4 also acquires information about the position of the stage 32 from the position measurement device 34.

[0126] Thereafter, the operation of changing the positional relationship between the processing shot area PSA and the slit mark 356-1 in a plane along the XY plane and the operation of acquiring information on the state of the processing light EL and information on the position of the stage 32 are repeated as many times as necessary. As a result, the control device 4 can acquire information on the state of the processing light EL irradiated to each of the multiple positions in the processing shot area PSA.

[0127] After the state detection operation is performed, the control device 4 performs a state control operation, as another part of the light state control operation, in which the control device 4 controls the state of the processing light EL in synchronization with the scanning of the processing light EL based on the information acquired in the state detection operation. Specifically, the control device 4 first calculates the position of the slit mark 356-1 (particularly, its position in the stage coordinate system) at the time the light-receiving element 352 receives the processing light EL based on the information about the position of the stage 32 acquired in the state detection operation. As a result, the control device 4 can obtain information regarding the relationship between the position of the slit mark 356-1 and the state of the processing light EL received through the slit mark 356-1. Furthermore, the position of the slit mark 356-1 in the stage coordinate system can be converted to the position of the slit mark 356-1 within the processing shot area PSA. Therefore, the control device 4 can obtain information regarding the relationship between the position of the slit mark 356-1 within the processing shot area PSA and the state of the processing light EL detected through the slit mark 356-1. In other words, the control device 4 can obtain information regarding the relationship between the irradiation position of the processing light EL within the processing shot area PSA and the state of the processing light EL irradiated at the irradiation position.

[0128] If the information acquired here indicates that the state of the processing light EL is the same (i.e., does not change) regardless of the irradiation position of the processing light EL within the processing shot area PSA, it is estimated that the state of the processing light EL is an ideal state in which the state of the processing light EL is the same at any position within the processing shot area PSA. Therefore, in this case, the control device 4 does not need to change the state of the processing light EL in synchronization with the scanning of the processing light EL when actually processing the workpiece W. On the other hand, if the information acquired here indicates that the state of the processing light EL changes depending on the irradiation position of the processing light EL within the processing shot area PSA, it is estimated that the state of the processing light EL is not ideal. Therefore, in this case, the control device 4 changes the state of the processing light EL in synchronization with the scanning of the processing light EL when actually processing the workpiece W. Specifically, the control device 4 changes the state of the processing light EL in synchronization with the scanning of the processing light EL so as to reduce the difference between the state of the processing light EL irradiated at a certain position within the processing shot area PSA and the state of the processing light EL irradiated at another position within the processing shot area PSA. The control device 4 changes the state of the processing light EL in synchronization with the scanning of the processing light EL so as to reduce variation in the state of the processing light EL within the processing shot area PSA. At this time, the control device 4 may change the state of the processing light EL in synchronization with the scanning of the processing light EL so that the state of the processing light EL is the same at any position within the processing shot area PSA. The control device 4 may change the state of the processing light EL in synchronization with the scanning of the processing light EL so as to eliminate variation in the state of the processing light EL within the processing shot area PSA. Note that even if the state of the processing light EL changes depending on the irradiation position of the processing light EL within the processing shot area PSA, the control device 4 does not need to change the state of the processing light EL in synchronization with the scanning of the processing light EL when actually processing the workpiece W.

[0129] For example, the control device 4 may change the state of the processing light EL in synchronization with the scanning of the processing light EL so as to satisfy a spot diameter condition that the difference between the spot diameter of the processing light EL at a first position within the processing shot area PSA and the spot diameter of the processing light EL at a second position within the processing shot area PSA is smaller than (or equal to) a predetermined tolerance. In this case, the control device 4 may change the focus position of the processing light EL in synchronization with the scanning of the processing light EL so as to satisfy the spot diameter condition. For example, the control device 4 may change the focus position of the processing light EL to a desired value determined depending on the irradiation position of the processing light EL so as to satisfy the spot diameter condition. For example, the control device 4 may change the focus position of the processing light EL to a desired value that differs or is optimized for each irradiation position of the processing light EL so as to satisfy the spot diameter condition.

[0130] For example, the control device 4 may change the state of the processing light EL in synchronization with the scanning of the processing light EL so as to satisfy an intensity condition that the difference between the intensity of the processing light EL (e.g., the amount of energy per unit area) at a first position within the processing shot area PSA and the intensity of the processing light EL at a second position within the processing shot area PSA is smaller than (or equal to) a predetermined tolerance. In this case, the control device 4 may change the intensity of the processing light EL generated by the processing light source 11 in synchronization with the scanning of the processing light EL so as to satisfy the intensity condition. The control device 4 may change the control mode of the intensity distribution of the processing light EL by an intensity distribution control member (not shown) provided in the irradiation optical system 121 in synchronization with the scanning of the processing light EL so as to satisfy the intensity condition.

[0131] For example, the control device 4 may change the state of the processing light EL in synchronization with the scanning of the processing light EL so as to satisfy an intensity distribution condition that the difference between the intensity distribution of the processing light EL at a first position in the processing shot area PSA and the intensity distribution of the processing light EL at a second position in the processing shot area PSA becomes smaller than a predetermined tolerance (or becomes the same). In this case, the control device 4 may change the control mode of the intensity distribution of the processing light EL by an intensity distribution control member (not shown) provided in the irradiation optical system 12 in synchronization with the scanning of the processing light EL so as to satisfy the intensity distribution condition.

[0132] The optical state control operation described above suppresses variations in the state of the processing light EL caused by the characteristics of at least one of the galvanometer mirror 1212 and the fθ lens 1213. Therefore, the processing system SYSa can appropriately process the workpiece W using the processing light EL with suppressed variations in the state.

[0133] In the above description, in the light state control operation, the processing head 12 irradiates the processing light EL onto the passage area 355 that forms the slit mark 356-1. However, the processing head 12 may irradiate the processing light EL onto the passage area 355 that forms a mark 356 different from the slit mark 356-1 (for example, a rectangular mark 356-3). In other words, the state of the processing light EL may be controlled based on the result of receiving the processing light EL via a mark 356 different from the slit mark 356-1 (for example, a rectangular mark 356-3).

[0134] (1-3-5) Galvano control operation Next, the galvanometer control operation will be described. As described above, the galvanometer control operation is an operation for controlling the galvanometer mirror 1212 so as to reduce the influence of temperature drift, which is a phenomenon in which the irradiation position of the processing light EL within a plane along the XY plane varies (i.e., fluctuates) due to the temperature of the galvanometer mirror 1212. Therefore, first, with reference to Figures 20(a) and 20(b), a brief description will be given of the phenomenon in which the irradiation position of the processing light EL within a plane along the XY plane varies due to the temperature of the galvanometer mirror 1212.

[0135] FIG. 20(a) is a plan view showing the irradiation position of the processing light EL on the surface of the workpiece W (i.e., the surface along the XY plane) when no temperature drift occurs. FIG. 20(b) is a plan view showing the irradiation position of the processing light EL on the surface of the workpiece W (i.e., the surface along the XY plane) when temperature drift occurs. As shown in FIG. 20(a), when no temperature drift occurs, the processing light EL can scan the surface of the workpiece W (i.e., the surface along the XY plane) along an ideal scanning trajectory within the processing shot area PSA. Specifically, when no temperature drift occurs, the movement direction of the irradiation position of the processing light EL by the Y scanning mirror 1212Y is the same as the movement direction of the stage 32 by the Y slide member 332 (typically, the Y-axis direction of the stage coordinate system). Similarly, when no temperature drift occurs, the movement direction of the irradiation position of the processing light EL by the X scanning mirror 1212X is the same as the movement direction of the stage 32 by the X slide member 331 (typically, the X-axis direction of the stage coordinate system). 20(b), when a temperature drift occurs, the processing light EL may scan the surface of the workpiece W along a scanning trajectory that differs from the ideal scanning trajectory within the processing shot area PSA. The movement direction of the irradiation position of the processing light EL by the Y scanning mirror 1212Y may not be the same as the movement direction of the stage 32 by the Y slide member 332. Similarly, the movement direction of the irradiation position of the processing light EL by the X scanning mirror 1212X may not be the same as the movement direction of the stage 32 by the X slide member 331.

[0136] In other words, when temperature drift occurs, the irradiation position of the processing light EL deflected by the galvanometer mirror 1212 may differ from an ideal position (for example, a designed position) compared to when temperature drift does not occur. When temperature drift occurs, the scanning trajectory of the processing light EL deflected by the galvanometer mirror 1212 may differ from an ideal scanning trajectory (for example, a designed scanning trajectory) compared to when temperature drift does not occur. Such a state in which the irradiation position of the processing light EL differs from the ideal position is not desirable from the viewpoint of appropriate processing of the workpiece W.

[0137] Therefore, the control device 4 specifies the irradiation position of the processing light EL within the plane along the XY plane during the period when the galvanometer mirror 1212 is deflecting the processing light EL, based on the light reception result of the light receiving element 352. Then, the control device 4 controls the galvanometer mirror 1212 so that the irradiation position of the processing light EL within the plane along the XY plane during the period when the galvanometer mirror 1212 is deflecting the processing light EL approaches (or coincides with) an ideal position.

[0138] As part of the galvanometer control operation, the control device 4 first performs an irradiation position detection operation to detect, with the light receiving device 35, the irradiation position of the processing light EL deflected by the galvanometer mirror 1212. To perform the irradiation position detection operation, the stage 32 and / or the processing head 12 move so that the light receiving device 35 (particularly, the slit mark 356-1) is positioned within the processing shot area PSA. In this state, the processing head 12 scans the surface portion of the stage 32 included in the processing shot area PSA with the processing light EL. As a result, the light receiving element 352 detects the processing light EL when the processing light EL crosses the slit mark 356-1. At this time, the control device 4 obtains, from the position measurement device 34, information regarding the position of the stage 32 at the time the light receiving element 352 detects the processing light EL. Because the light receiving device 35 is disposed on the stage 32, the information regarding the position of the stage 32 includes information regarding the position of the light receiving device 35 (particularly, the position of the slit mark 356-1). The above operation is repeated while moving the light receiving device 35 (particularly, the slit mark 356-1) within the processing shot area PSA. For example, the light receiving element 352 receives the processing light EL irradiated at a first irradiation position within the processing shot area PSA, and receives the processing light EL irradiated at a second irradiation position within the processing shot area PSA. That is, the light receiving element 352 receives the processing light EL when the stage 32 moves to a first position so that the slit mark 356-1 is located at the first irradiation position within the processing shot area PSA, and receives the processing light EL when the stage 32 moves to a second position so that the slit mark 356-1 is located at the second irradiation position within the processing shot area PSA. As a result, the control device 4 can obtain information about multiple irradiation positions onto which the processing light EL deflected by the galvanometer mirror 1212 is irradiated. That is, the control device 4 can obtain information about the irradiation position of the processing light EL in each of multiple regions within a plane along the XY plane. Considering that the trajectory connecting multiple irradiation positions in sequence is the scanning trajectory of the processing light EL (i.e., the direction of movement of the irradiation position of the processing light EL), the control device 4 can acquire information regarding the scanning trajectory of the processing light EL (i.e., the direction of movement of the irradiation position of the processing light EL) deflected by the galvanometer mirror 1212.

[0139] After the irradiation position detection operation is performed, the control device 4 performs a control operation, as another part of the galvanometer control operation, to actually control the galvanometer mirror 1212 based on the information acquired in the irradiation position detection operation. Specifically, the control device 4 first calculates the amount of deviation between the irradiation position of the processing light EL in a plane along the XY plane during the period when the galvanometer mirror 1212 is deflecting the processing light EL and the ideal position, based on the information about the irradiation position of the processing light EL acquired in the irradiation position detection operation. Then, the control device 4 controls the galvanometer mirror 1212 so that the calculated amount of deviation becomes small (or becomes zero). For example, the control device 4 may control the drive amount (specifically, the amount of swing or rotation) of the X scanning mirror 1212X and the Y scanning mirror 1212Y included in the galvanometer mirror 1212. As a result, the irradiation position of the processing light EL in a plane along the XY plane (i.e., the scanning position) is corrected to approach or coincide with the ideal position. The irradiation position of the processing light EL in at least one of the X-axis and Y-axis directions is corrected to approach or match the ideal position. The scanning trajectory of the processing light EL is corrected to approach or match the ideal trajectory. Typically, the movement direction of the irradiation position of the processing light EL by the Y scanning mirror 1212Y is the same as the movement direction of the stage 32 by the Y slide member 332. Similarly, the movement direction of the irradiation position of the processing light EL by the X scanning mirror 1212X is the same as the movement direction of the stage 32 by the X slide member 331.

[0140] The galvanometer control operation described above can reduce the effect of temperature drift, which is a phenomenon in which the irradiation position of the processing light EL within a plane along the XY plane varies (i.e., fluctuates) due to the temperature of the galvanometer mirror 1212. Therefore, the processing system SYS can process the workpiece W with high precision by irradiating the processing light EL deflected by the galvanometer mirror 1212 at an ideal position. Note that the phenomenon in which the irradiation position of the processing light EL within a plane along the XY plane varies (i.e., fluctuates) due to the temperature of an optical system other than the galvanometer mirror 1212 (for example, the fθ lens 1213) may also be reduced using a procedure similar to that of this example.

[0141] In the above description, in the galvanometer control operation, the processing head 12 irradiates the processing light EL onto the passage area 355 that forms the slit mark 356-1. However, the processing head 12 may irradiate the processing light EL onto the passage area 355 that forms a mark 356 different from the slit mark 356-1 (for example, a rectangular mark 356-3). In other words, the galvanometer mirror 1212 may be controlled based on the result of receiving the processing light EL via a mark 356 different from the slit mark 356-1 (for example, a rectangular mark 356-3).

[0142] (1-4) Technical effects of the processing system SYSa The processing system SYSa described above can appropriately process the workpiece W using at least one of the results of reception of the processing light EL by the light receiving device 35 and the results of measurement of the mark 356 of the light receiving device 35 by the measurement device 2.

[0143] (2) Machining system SYSb of the second embodiment Next, a processing system SYS of a second embodiment (hereinafter, the processing system SYS of the second embodiment will be referred to as "processing system SYSb") will be described. The processing system SYSb of the second embodiment differs from the processing system SYSa of the first embodiment described above in that it includes a stage device 3b instead of the stage device 3. Other features of the processing system SYSb may be the same as other features of the processing system SYSa. The stage device 3b differs from the stage device 3 in that it includes a stage 32b instead of the stage 32. Other features of the stage device 3b may be the same as other features of the stage device 3. Therefore, hereinafter, the stage 32b of the second embodiment will be described with reference to FIG. 21. FIG. 21 is a cross-sectional view showing the structure of the stage 32b of the second embodiment.

[0144] 21, the stage 32b of the second embodiment differs from the stage 32 of the first embodiment in that at least a portion of the outer circumferential surface 322 is positioned above the mounting surface 321. In this case, the outer circumferential member 324b including the outer circumferential surface 322 of the stage 32b positioned above the mounting surface 321 (i.e., the outer circumferential member 324b of the stage 32b positioned around the mounting surface 321) forms a convex portion protruding from the mounting surface 321.

[0145] In the second embodiment, too, a recess 323 in which the light receiving device 35 is disposed is formed in the outer peripheral surface 322 (particularly, the outer peripheral surface 322 located above the mounting surface 321). In this case, the recess 323 is formed adjacent to the outer peripheral member 324b corresponding to the convex portion protruding from the mounting surface 321. In particular, the recess 323 is formed so as to be surrounded by the outer peripheral member 324b corresponding to the convex portion protruding from the mounting surface 321.

[0146] The machining system SYSb of the second embodiment can achieve the same effects as those achieved by the machining system SYSa of the first embodiment described above.

[0147] (3) Machining system SYSc of the third embodiment Next, a processing system SYS of a third embodiment (hereinafter, the processing system SYS of the third embodiment will be referred to as the "processing system SYSc") will be described. The processing system SYSc of the third embodiment differs from the processing system SYSb of the second embodiment described above in that the method of arranging the light receiving device 35 is different. Other features of the processing system SYSc may be the same as other features of the processing system SYSc. Therefore, hereinafter, the method of arranging the light receiving device 35 of the third embodiment will be described with reference to FIG. 22. FIG. 22 is a cross-sectional view showing the method of arranging the light receiving device 35 of the third embodiment.

[0148] 22 , in the third embodiment, a part of the light receiving device 35 may be disposed in the recess 323, while another part of the light receiving device 35 may not be disposed in the recess 323. In other words, a part of the light receiving device 35 may be disposed inside the recess 323, while another part of the light receiving device 35 may be disposed outside the recess 323. In the example shown in FIG. 22 , the beam passing member 351 is disposed inside the recess 323, while the light receiving element 352 is disposed outside the recess 323.

[0149] A part of the light-receiving device 35 arranged inside the recess 323 and another part of the light-receiving device 35 arranged outside the recess 323 may be optically connected via an optical transmission member 36c that can transmit the processing light EL incident on the light-receiving device 35. For example, in the example shown in FIG. 22 , a beam-passing member 351 arranged inside the recess 323 and a light-receiving element 352 arranged outside the recess 323 may be optically connected via the optical transmission member 36c. Note that the state in which "the beam-passing member 351 and the light-receiving element 352 are optically connected via the optical transmission member 36c" here may also mean a state in which "the processing light EL incident on the beam-passing member 351 can be transmitted to the light-receiving element 352 via the optical transmission member 36c." The optical transmission member 36c may include, for example, a light guide 361c, an optical system 362c that guides the processing light EL through the beam passing member 351 (i.e., the processing light EL through a part of the light receiving device 35 arranged inside the recess 323) to the input end of the light guide 361c, and an optical system 363c that guides the processing light EL from the output end of the light guide 361c to the light receiving element 352 (i.e., another part of the light receiving device 35 arranged outside the recess 323).

[0150] The machining system SYSb of the third embodiment can achieve the same effects as those achieved by the machining system SYSb of the second embodiment described above. Furthermore, in the third embodiment, it is not necessary to arrange all of the light receiving devices 35 on the stage 32. This facilitates downsizing and / or simplification of the stage 32. Furthermore, the degree of freedom in arranging the light receiving devices 35 is improved.

[0151] The processing system SYSa of the first embodiment described above may have components specific to the third embodiment. The components specific to the third embodiment may include components related to the arrangement of the light receiving device 35 (particularly, the arrangement of the light receiving device 35 outside the recess 323).

[0152] (4) Machining system SYSd of the fourth embodiment Next, a processing system SYS of a fourth embodiment (hereinafter, the processing system SYS of the fourth embodiment will be referred to as "processing system SYSd") will be described. The processing system SYSd of the fourth embodiment differs from the processing system SYSb of the second embodiment described above in that it includes a stage device 3d instead of the stage device 3b. Other features of the processing system SYSd may be the same as other features of the processing system SYSb. The stage device 3d differs from the stage device 3b in that it includes a light-receiving device 35d instead of the light-receiving device 35. Other features of the stage device 3d may be the same as other features of the stage device 3b. Therefore, hereinafter, the light-receiving device 35d of the fourth embodiment will be described with reference to FIG. 23. FIG. 23 is a cross-sectional view showing the structure of the light-receiving device 35d of the fourth embodiment.

[0153] 23, the light receiving device 35d differs from the light receiving device 35 in that it may not include a beam passing member 351. Furthermore, the light receiving device 35d differs from the light receiving device 35 in that it includes an imaging optical system 357d. Other features of the light receiving device 35d may be the same as other features of the light receiving device 35.

[0154] The imaging optical system 357d forms an image of an object located above the imaging optical system 357d (i.e., on the opposite side from the light receiving surface 3521) on the light receiving surface 3521 of the light receiving element 352. In other words, the imaging optical system 357d forms an image of an object located on the object side of the imaging optical system 357d on the light receiving surface 3521 located on the image side of the imaging optical system 357d. For this reason, the imaging optical system 357d and the light receiving element 352 are arranged so that the image plane of the imaging optical system 357d coincides with the light receiving surface 3521 of the light receiving element 352 or is located near the light receiving surface 3521 of the light receiving element 352.

[0155] The light receiving element 352 receives light that forms an image on the light receiving surface 3521. Therefore, the light receiving element 352 may essentially function as an imaging element that captures an image of an object located closer to the object than the imaging optical system 357d. In other words, the light receiving device 35d may essentially function as an imaging device that captures an image of an object located closer to the object than the imaging optical system 357d from the stage 32 side using the light receiving element 352.

[0156] For example, the light receiving element 352 may capture an image of at least a part of the processing head 12. For example, the light receiving element 352 may capture an image of at least a part of the irradiation optical system 121 included in the processing head 12. For example, the light receiving element 352 may capture an image of at least a part of an optical member (e.g., the fθ lens 1213) included in the irradiation optical system 121. For example, the light receiving element 352 may capture an image of at least a part of the measurement head 21.

[0157] As described above, the processing head 12 emits processing light EL. In this case, the light receiving element 352 may capture an image of the processing light EL emitted from the processing head 12. In other words, the light receiving element 352 may capture an image of the processing light EL emitted from the processing head 12 from the stage 32 side of the processing head 12. As described above, the measurement head 21 emits measurement light ML. In this case, the light receiving element 352 may capture an image of the measurement light ML emitted from the measurement head 21.

[0158] The light receiving result by the light receiving element 352 (i.e., the image captured by the light receiving element 352 functioning as an image capturing element) may be output to the control device 4. The control device 4 may control the processing system SYSd (e.g., at least one of the processing device 1, the measurement device 2, and the stage device 3) based on the image captured by the light receiving element 352 (i.e., the image capturing result of the light receiving element 352). For example, when the light receiving element 352 captures the image of the processing head 12, the control device 4 may control the characteristics of the processing light EL based on the image capturing result of the light receiving element 352. In this case, the control device 4 may function as a beam characteristics changing device that controls the characteristics of the processing light EL based on the image capturing result of the light receiving element 352. For example, when the light receiving element 352 captures the processing light EL, the control device 4 may control the irradiation position of the processing light EL based on the image capturing result of the light receiving element 352.

[0159] Of the optical members (lenses, etc.) constituting the imaging optical system 357d, a mark measurable by the measuring device 2 (i.e., a mark that can be used as an example of the mark 356) may be provided on the optical member on the most incident side. This mark may be provided outside the effective area of ​​the imaging optical system 357d (the area through which the light beam received by the image sensor 3521 passes). Alternatively, this mark may be provided on the outer circumferential surface 322.

[0160] The machining system SYSd of the fourth embodiment can machine the workpiece W based on the imaging results of the light-receiving device 35d that can function as an imaging device. Therefore, the machining system SYSd can appropriately machine the workpiece W based on information that can be identified from the image corresponding to the imaging results of the light-receiving device 35d.

[0161] At least one of the processing system SYSa of the first embodiment and the processing system SYSc of the third embodiment may have components specific to the fourth embodiment. The components specific to the fourth embodiment may include components related to the light receiving device 35d.

[0162] (5) Machining system SYSe of the fifth embodiment Next, a processing system SYS of a fifth embodiment (hereinafter, the processing system SYS of the fifth embodiment will be referred to as the "processing system SYSe") will be described. The processing system SYSe of the fifth embodiment differs from the processing system SYSb of the second embodiment described above in that it includes a stage device 3e instead of the stage device 3b. Other features of the processing system SYSe may be the same as other features of the processing system SYSb. The stage device 3e differs from the stage device 3b in that it includes a light-receiving device 35e instead of the light-receiving device 35. Other features of the stage device 3e may be the same as other features of the stage device 3b. Therefore, hereinafter, the light-receiving device 35e of the fifth embodiment will be described with reference to FIG. 24. FIG. 24 is a cross-sectional view showing the structure of the light-receiving device 35e of the fifth embodiment.

[0163] 24, the light receiving device 35e differs from the light receiving device 35 in that it does not necessarily include a beam passing member 351. Furthermore, the light receiving device 35e differs from the light receiving device 35 in that it includes an imaging optical system 357e, an index plate 358e, and an imaging optical system 359e. Other features of the light receiving device 35e may be the same as other features of the light receiving device 35.

[0164] The imaging optical system 357e forms an intermediate image on the image plane of the imaging optical system 357e. An index plate 358e is disposed on the image plane of the imaging optical system 357e. The index plate 358e is a plate-shaped member on which a predetermined index is formed. As shown in FIG. 25(a), which is a plan view showing an example of the index plate 358e, the index may be formed by a passing pattern 3581e that allows light incident on the index plate 358e to pass through. As shown in FIG. 25(b), which is a plan view showing another example of the index plate 358e, the index may be formed by an attenuation pattern 3582e that attenuates (or blocks, in some cases) the light incident on the index plate 358e. The imaging optical system 359e forms an image of the index plate 358e on which the intermediate image is formed by the imaging optical system 357e (i.e., an image of the index formed by at least one of the passing pattern 3581e and the attenuation pattern 3582e described above) on the light receiving surface 3521 of the light receiving element 352. Therefore, the imaging optical system 359e and the light receiving element 352 are arranged so that the image plane of the imaging optical system 359e coincides with the light receiving surface 3521 of the light receiving element 352 or is located near the light receiving surface 3521 of the light receiving element 352.

[0165] The light receiving element 352 receives light that forms an image (i.e., an image of the index plate 358e) on the light receiving surface 3521. Therefore, the light receiving element 352 may essentially function as an imaging element (imaging device) that captures the image of the index plate 358e.

[0166] The light receiving result by the light receiving element 352 (i.e., the image of the index plate 358e captured by the light receiving element 352 functioning as an image capturing element) may be output to the control device 4. The control device 4 may control the processing system SYSe (e.g., at least one of the processing device 1, the measuring device 2, and the stage device 3) based on the image captured by the light receiving element 352 (i.e., the image capturing result of the light receiving element 352).

[0167] The measuring device 2 may measure the passing pattern 3581e (or the attenuation pattern 3582e) formed on the index plate 358e as an example of the mark 356 described above via the imaging optical system 357e.

[0168] The machining system SYSe of the fifth embodiment can machine the workpiece W based on the image pickup result of the light receiving device 35e that can function as an imaging device. Therefore, the machining system SYSe can appropriately machine the workpiece W based on information that can be identified from the image corresponding to the image pickup result of the light receiving device 35e.

[0169] At least one of the processing system SYSa of the first embodiment and the processing system SYSc of the third embodiment to the processing system SYSd of the fourth embodiment may have components specific to the fifth embodiment. The components specific to the fifth embodiment may include components related to the light receiving device 35e.

[0170] (6) Machining system SYSf of the sixth embodiment Next, a machining system SYS of a sixth embodiment (hereinafter, the machining system SYS of the sixth embodiment will be referred to as a "machining system SYSf") will be described with reference to Fig. 26. Fig. 26 is a system configuration diagram showing the system configuration of the machining system SYSf of the sixth embodiment.

[0171] As shown in FIG. 26 , the processing system SYSf of the sixth embodiment differs from the processing system SYSa of the first embodiment described above in that it includes a stage unit 3f instead of the stage unit 3. Furthermore, the processing system SYSf differs from the processing system SYSa in that it further includes a gas supply unit 6f. Other features of the processing system SYSf may be similar to other features of the processing system SYSa. The stage unit 3f differs from the stage unit 3 in that it includes a stage 32f instead of the stage 32. Furthermore, the stage unit 3f differs from the stage unit 3 in that it includes a cover member 37f. Other features of the stage unit 3f may be similar to other features of the stage unit 3. Therefore, hereinafter, the stage 32f, cover member 37f, and gas supply unit 6f unique to the processing system SYSf of the sixth embodiment will be described with reference to FIG. 27 . FIG. 27 is a cross-sectional view showing the structure of the stage 32f including the cover member 37f.

[0172] As shown in FIG. 27 , the cover member 37f covers at least a portion of the light receiving device 35. In particular, the cover member 37f covers at least a portion of the beam passing member 351. When the cover member 37f covers the beam passing member 351, the light receiving device 35 including the beam passing member 351 is formed in the recess 323 of the stage 32, and therefore the cover member 37f may cover the recess 323. In this case, a space is formed between the cover member 37f and the beam passing member 351 inside the recess 323. The space formed by the cover member 37f and the beam passing member 351 inside the recess 323 may be isolated (in other words, separated) from the space outside the recess 323. Typically, the space formed by the cover member 37f and the beam passing member 351 inside the recess 323 may be isolated from the space outside the recess 323 through which the processing light EL passes. In the example shown in Figure 27, the upper surface of the cover member 37f is flush with the outer peripheral surface 322 of the stage device 3f, but the upper surface of the cover member 37f may be located inside the recess 323, or the upper surface of the cover member 37f may protrude from the outer peripheral surface 322.

[0173] When the cover member 37f covers the beam passing member 351 in this manner, unwanted substances are prevented from adhering to the beam passing member 351f. Examples of unwanted substances that may adhere to the beam passing member 351f include at least one of fumes generated by irradiation of the workpiece W with the processing light EL and debris present in the internal space of the housing 5. Here, unwanted substances that diffuse into the atmosphere surrounding the workpiece W may also be referred to as fumes. Unwanted substances that adhere to the inside of the housing 5 and at least one of the components located inside the housing 5 may also be referred to as debris.

[0174] If unnecessary material adheres to the beam passing member 351f, the opening 353 (passing region 355) formed in the beam passing member 351f may be at least partially hidden or blocked by the unnecessary material. This results in a technical problem that the reception of the processing light EL by the light receiving element 352 through the opening 353 (passing region 355) may be affected. Furthermore, this results in a technical problem that the measurement of the mark 356 formed by the passing region 355 by the measuring device 2 may be affected. However, in the sixth embodiment, the adhesion of unnecessary material to the beam passing member 351f is prevented. This reduces the possibility that the reception of the processing light EL by the light receiving element 352 through the opening 353 (passing region 355) may be affected. As a result, the light receiving element 352 can properly receive the processing light EL. This also reduces the possibility that the measurement of the mark 356 formed by the passing region 355 by the measuring device 2 may be affected. As a result, the measuring device 2 can appropriately measure the mark 356. Therefore, the processing system SYSf can appropriately process the workpiece W based on the light reception result of the processing light EL and the measurement result of the light receiving device 35 by the measuring head 21.

[0175] Considering that one of the causes of the above-mentioned technical problem is that the opening 353 (passage area 355) is at least partially hidden or blocked by unnecessary material, the cover member 37f may at least cover the opening 353 (passage area 355) formed in the beam passing member 351f. Considering that the mark 356 is formed by the opening 353 (passage area 355), the cover member 37f may at least cover the mark 356. Note that, as shown in FIG. 28 showing another example of the cover member 37f, the cover member 37f may include a cover member 37f-1 that covers the mark 356 measured by the measurement device 2 (i.e., the passage area 355 where the mark 356 is formed) and a cover member 37f-2 that covers the mark 356 irradiated with the processing light EL (i.e., the passage area 355 through which the processing light EL passes). For example, in the above description, the slit mark 356-1, the fine mark 356-2, the rectangular mark 356-3, and the search mark 356-5 are irradiated with the processing light EL while the cross mark 356-4 is measured by the measurement device 2. For this reason, the cover member 37f may be provided with a cover member 37f-1 that covers the cross mark 356-4, and a cover member 37f-2 that covers at least one of the slit mark 356-1, the fine mark 356-2, the rectangular mark 356-3, and the search mark 356-5, separately.

[0176] If the cover member 37f continues to cover the beam passing member 351, the processing device 1 cannot irradiate the passing region 355 formed in the beam passing member 351 with the processing light EL. Similarly, the measurement device 2 cannot measure the mark 356 formed on the beam passing member 351. For this reason, the state of the cover member 37f may be switched between a first state in which the cover member 37f covers the beam passing member 351 and a second state in which the cover member 37f does not cover the beam passing member 351. In other words, the cover member 37f may move between a first position in which the cover member 37f can cover the beam passing member 351 and a second position in which the cover member 37f does not cover the beam passing member 351. Note that FIG. 27 shows the cover member 37f in the first state (i.e., in the first position). Meanwhile, FIGS. 29(a) and 29(b) show the cover member 37f in the second state (i.e., in the second position).

[0177] The cover member 37f may be located at a first position where the cover member 37f covers the beam passing member 351 when the processing apparatus 1 irradiates the workpiece W with the processing light EL (i.e., for at least a portion of the period during which the processing apparatus 1 irradiates the workpiece W with the processing light EL). On the other hand, the cover member 37f may be located at a second position where the cover member 37f does not cover the beam passing member 351 when the processing apparatus 1 irradiates the beam passing member 351 with the processing light EL (i.e., for at least a portion of the period during which the processing apparatus 1 irradiates the beam passing member 351 with the processing light EL). The cover member 37f may be located at the second position when the light receiving element 352 receives the processing light EL from the processing apparatus 1 (i.e., for at least a portion of the period during which the light receiving element 352 receives the processing light EL from the processing apparatus 1). The cover member 37f may be located at the second position when the measuring device 2 measures the mark 356 (i.e., for at least a portion of the period during which the measuring device 2 measures the mark 356). As a result, the presence of the cover member 37f does not affect the operation of the processing system SYSf.

[0178] The gas supplied from the gas supply device 6f may be used as the power for moving the cover member 37f. In this case, the cover member 37f may include a member (for example, an air cylinder) that converts the force of the air into power. However, other powers may also be used as the power for moving the cover member 37f.

[0179] The gas supply device 6f may supply gas to the space inside the recess 323. Specifically, the gas supply device 6f is connected via a gas supply pipe 326f to a gas supply port 325f formed in a portion of the stage 32f facing the recess 323. The gas supply device 6f may supply gas to the space inside the recess 323 via the gas supply pipe 326f and the gas supply port 325f. In this case, the gas supply device 6f may supply gas to a space facing the upper surface of the beam passing member 351 (i.e., a space on the processing head 12 side of the beam passing member 351), as shown in FIGS. 27 and 29.

[0180] When gas is supplied to the space inside the recess 323 (particularly the space facing the upper surface of the beam passing member 351), the gas forms a gas flow in the space inside the recess 323. As a result, the gas flow prevents unwanted substances from adhering to the beam passing member 351. Furthermore, the gas flow removes unwanted substances that have adhered to the beam passing member 351.

[0181] The gas supply device 6f may supply gas to the space inside the recess 323 when the processing device 1 irradiates the workpiece W with the processing light EL (that is, during at least a part of the period when the processing device 1 irradiates the workpiece W with the processing light EL). The gas supply device 6f may stop supplying gas during the period when the processing device 1 is not irradiating the workpiece W with the processing light EL.

[0182] The machining system SYSf of the sixth embodiment can achieve the same effects as those achieved by the machining system SYSa of the first embodiment described above. Furthermore, the machining system SYSf reduces the possibility of unwanted substances adhering to the beam passing member 351f. Therefore, the machining system SYSf can properly process the workpiece W without being affected by unwanted substances. In other words, the machining system SYSf can properly process the workpiece W based on the results of reception of the processing light EL by the light receiving device 35 and the results of measurement of the light receiving device 35 by the measurement head 21.

[0183] In the above description, the processing system SYSf includes both the cover member 37f and the gas supply device 6f. However, the processing system SYSf may include the cover member 37f but not the gas supply device 6f. The processing system SYSf may include the gas supply device 6f but not the cover member 37f. Furthermore, considering that one of the causes of the above-described technical problem is that the opening 353 (passage region 355) is at least partially hidden or blocked by unnecessary matter, multiple openings 353 (passage regions 355 with the same characteristics) may be formed. In other words, multiple marks 356 with the same characteristics may be formed. In this case, even if one opening 353 (one passing region 355, one mark 356) is at least partially hidden or blocked by unnecessary matter, the above-described technical problem does not occur as long as other openings 353 (other passing regions 355, other marks 356) having the same characteristics as the one opening 353 (one passing region 355, one mark 356) are not hidden or blocked by unnecessary matter. This is because the processing system SYSf can perform the above-described operation using other openings 353 (other passing regions 355, other marks 356) that are not hidden or blocked by unnecessary matter.

[0184] Furthermore, at least one of the machining systems SYSb of the second embodiment to SYSe of the fifth embodiment described above may have the components specific to the sixth embodiment. The components specific to the sixth embodiment may include the components related to the cover member 37f and the gas supply device 6f.

[0185] (7) Machining system SYSg of the seventh embodiment Next, a processing system SYS of a seventh embodiment (hereinafter, the processing system SYS of the seventh embodiment will be referred to as "processing system SYSg") will be described. The processing system SYSg of the seventh embodiment differs from the processing system SYSa of the first embodiment described above in that it includes a processing device 1g instead of the processing device 1. Other features of the processing system SYSg may be the same as other features of the processing system SYSa. The processing device 1g differs from the processing device 1 in that it includes a processing head 12g instead of the processing head 12. Other features of the processing device 1g may be the same as other features of the processing device 1. The processing head 12g differs from the processing head 12 in that it includes an irradiation optical system 121g instead of the irradiation optical system 121. Other features of the processing head 12g may be the same as other features of the processing head 12. Therefore, hereinafter, the irradiation optical system 121g of the seventh embodiment will be described with reference to FIG. 30. FIG. 30 is a perspective view showing the structure of the irradiation optical system 121g of the seventh embodiment.

[0186] 30 , the irradiation optical system 121g differs from the irradiation optical system 121 in that it includes a galvanometer mirror 1212g instead of the galvanometer mirror 1212. Other features of the irradiation optical system 121g may be similar to other features of the irradiation optical system 121.

[0187] The galvanometer mirror 1212g differs from the galvanometer mirror 1212, which has a single X scan mirror 1212X and a single Y scan mirror 1212Y, in that it has two X scan mirrors 1212X and two Y scan mirrors 1212Y. Specifically, the galvanometer mirror 1212g has an X scan mirror 1212X#1, an X scan mirror 1212X#2, a Y scan mirror 1212Y#1, and a Y scan mirror 1212Y#2. The processing light EL from the focus changing optical system 1211 passes through the X scan mirror 1212X#1, the Y scan mirror 1212Y#1, the Y scan mirror 1212Y#2, and the X scan mirror 1212X#2 in this order, and is incident on the fθ lens 1213. Furthermore, the X scanning mirror 1212X#2 and the Y scanning mirror 1212Y#2 are each located away from the entrance pupil plane PP of the fθ lens 1213. The operation of the galvanometer mirror 1212g, which includes two X scanning mirrors 1212X and two Y scanning mirrors 1212Y, will be described below.

[0188] First, when the X-scan mirror 1212X#2 rotates or swings, the irradiation position of the processing light EL on the surface of the workpiece W changes along the X-axis direction, and the traveling direction of the processing light EL (i.e., the emission direction from the irradiation optical system 121g) changes along the θY direction (i.e., the rotation direction around the Y-axis). This is because the X-scan mirror 1212X#2 is located away from the entrance pupil plane PP of the fθ lens 1213. As a result, the processing light EL may not be emitted in an appropriate emission direction (for example, a direction that allows the processing light EL to be perpendicularly incident on the surface of the workpiece W). Therefore, in accordance with the rotation or swing of the X-scan mirror 1212X#2, the X-scan mirror 1212X#1 rotates or swings so that the processing light EL is emitted from the irradiation optical system 121g in the desired emission direction. In this case, it may be considered that the X-scan mirror 1212X#2 primarily changes the irradiation position of the processing light EL, while the X-scan mirror 1212X#1 primarily changes the emission direction of the processing light EL. In other words, it may be considered that the X-scan mirror 1212X#2 primarily functions as an irradiation position moving member that changes (i.e., moves) the irradiation position of the processing light EL, while the X-scan mirror 1212X#1 primarily functions as an emission direction changing member that changes the emission direction of the processing light EL. In this case, the processing light EL passes through the X-scan mirror 1212X#1 functioning as an emission direction changing member and the X-scan mirror 1212X#2 functioning as an irradiation position moving member, in that order, before entering the fθ lens 1213 via the entrance pupil plane PP. For this reason, typically, the distance between the entrance pupil plane PP and the X-scan mirror 1212X#1 (specifically, the distance along the optical path of the processing light EL; the same applies hereinafter to the seventh embodiment) is greater than the distance between the entrance pupil plane PP and the X-scan mirror 1212X#2.

[0189] However, when the X-scan mirror 1212X#1 rotates, not only does the emission direction of the processing light EL change along the θY direction, but the irradiation position of the processing light EL on the surface of the workpiece W also changes along the X-axis direction. Here, because the distances from the entrance pupil plane PP of the X-scan mirrors 1212X#1 and 1212X#2 are different, the ratios of the change in the emission direction of the processing light EL to the change in the irradiation position of the processing light EL per unit rotation of the X-scan mirrors 1212X#1 and 1212X#2 are different. Therefore, the X-scan mirror 1212X#2 can reduce or offset fluctuations in the irradiation position of the processing light EL caused by the rotation or swing of the X-scan mirror 1212X#1, and can set the irradiation position of the processing light EL to a desired position on the workpiece W.

[0190] Similarly, when the Y scanning mirror 1212Y#2 rotates or swings, the irradiation position of the processing light EL on the surface of the workpiece W changes along the Y-axis direction, and the traveling direction of the processing light EL (i.e., the emission direction from the irradiation optical system 121g) changes along the θX direction (i.e., the rotation direction around the X-axis). This is because the Y scanning mirror 1212Y#2 is located away from the entrance pupil plane PP of the fθ lens 1213. As a result, the processing light EL may not be emitted in an appropriate emission direction (for example, a direction that allows the processing light EL to be perpendicularly incident on the surface of the workpiece W). Therefore, in accordance with the rotation or swing of the Y scanning mirror 1212Y#2, the Y scanning mirror 1212Y#1 rotates or swings so that the processing light EL is emitted from the irradiation optical system 121g in the desired emission direction. In this case, it may be considered that the Y-scan mirror 1212Y#2 primarily changes the irradiation position of the processing light EL, while the Y-scan mirror 1212Y#1 primarily changes the emission direction of the processing light EL. That is, it may be considered that the Y-scan mirror 1212Y#2 primarily functions as an irradiation position moving member that changes (i.e., moves) the irradiation position of the processing light EL, while the Y-scan mirror 1212Y#1 primarily functions as an emission direction changing member that changes the emission direction of the processing light EL. In this case, the processing light EL passes through the Y-scan mirror 1212Y#1 functioning as an emission direction changing member and the Y-scan mirror 1212Y#2 functioning as an irradiation position moving member, in that order, before entering the fθ lens 1213 through the entrance pupil plane PP. For this reason, the distance between the entrance pupil plane PP and the Y-scan mirror 1212Y#1 is typically greater than the distance between the entrance pupil plane PP and the Y-scan mirror 1212Y#2.

[0191] However, when the Y-scan mirror 1212Y#1 rotates, not only does the emission direction of the processing light EL change along the θX direction, but the irradiation position of the processing light EL on the surface of the workpiece W also changes along the Y-axis direction. Here, because the Y-scan mirrors 1212Y#1 and 1212Y#2 are at different distances from the entrance pupil plane PP, the ratios of the change in the emission direction of the processing light EL to the change in the irradiation position of the processing light EL per unit rotation of the Y-scan mirrors 1212Y#1 and 1212Y#2 are different. Therefore, the Y-scan mirror 1212Y#2 reduces or offsets fluctuations in the irradiation position of the processing light EL caused by the rotation or swing of the Y-scan mirror 1212Y#1, and can set the irradiation position of the processing light EL to a desired position on the workpiece W.

[0192] The control device 4 may control the galvanometer mirror 1212g based on the result of reception of the processing light EL by the light receiving device 35. Specifically, the control device 4 may calculate the emission direction of the processing light EL from the irradiation optical system 121g based on the result of reception of the processing light EL by the light receiving device 35. The control device 4 may control the galvanometer mirror 1212g so that the calculated emission direction becomes a desired direction.

[0193] In order to calculate the emission direction of the processing light EL based on the reception result of the processing light EL by the light receiving device 35, the control device 4 may change the distance between the processing head 12 (particularly, the irradiation optical system 121g) and the light receiving device 35 (particularly, the passing region 355), and each time the distance is changed, may perform an operation of acquiring the position of the stage 32 (specifically, the positions in the X-axis direction and the Y-axis direction) at the time when the light receiving element 352 receives the processing light EL through the same passing region 355. In other words, the control device 4 may perform the operation of changing the distance between the processing head 12 and the light receiving device 35 and acquiring the position of the stage 32 at the time when the light receiving element 352 receives the processing light EL through the same passing region 355 multiple times while changing the distance between the processing head 12 and the light receiving device 35. As a result, the control device 4 can calculate the emission direction of the processing light EL (typically, the incident angle of the processing light EL with respect to the surface of the workpiece W or the beam passing member 351) based on the position of the stage 32 acquired multiple times. Typically, the line connecting the acquired positions of the stage 32 corresponds to the line along the emission direction of the processing light EL.

[0194] The control device 4 may control the galvanometer mirror 1212g not based on the result of reception of the processing light EL by the light receiving device 35. For example, the control device 4 may control the galvanometer mirror 1212g based on information related to the range to be removed.

[0195] The machining system SYSg of the seventh embodiment can achieve the same effects as those achieved by the machining system SYSa of the first embodiment described above.

[0196] At least one of the processing systems SYSb of the second embodiment to SYSf of the sixth embodiment described above may have the components specific to the seventh embodiment. The components specific to the seventh embodiment may include the components related to the irradiation optical system 121g.

[0197] (8) Machining system SYSh of the eighth embodiment Next, a machining system SYS of an eighth embodiment (hereinafter, the machining system SYS of the eighth embodiment will be referred to as a "machining system SYSh") will be described with reference to Fig. 31. Fig. 31 is a system configuration diagram showing the system configuration of the machining system SYSh of the eighth embodiment.

[0198] 31, the machining system SYSh of the eighth embodiment differs from the machining system SYSa of the first embodiment described above in that it includes a machining device 1h and a measuring device 2h instead of the machining device 1 and the measuring device 2. Other features of the machining system SYSh may be similar to other features of the machining system SYSa.

[0199] The processing apparatus 1h differs from the processing apparatus 1 in that it is provided with a plurality of processing heads 12. Furthermore, the processing apparatus 1h differs from the processing apparatus 1 in that it is provided with a plurality of head drive systems 13 that move the plurality of processing heads 12, respectively. However, the processing apparatus 1h may be provided with a head drive system 13 that moves at least two processing heads 12 together. Furthermore, the processing apparatus 1h differs from the processing apparatus 1 in that it is provided with a plurality of position measurement devices 14 that measure the positions of the plurality of processing heads 12, respectively. However, the processing apparatus 1h may be provided with a position measurement device 14 that measures the positions of at least two processing heads 12 together. Other features of the processing apparatus 1h may be similar to other features of the processing apparatus 1.

[0200] The measurement apparatus 2h differs from the measurement apparatus 2 in that it includes a plurality of measurement heads 21. The plurality of measurement heads 21 may have the same characteristics (for example, at least one of the measurement method, the size of the measurement shot area MSA, and the measurement accuracy). At least two of the plurality of measurement heads 21 may have different characteristics. Furthermore, the measurement apparatus 2h differs from the measurement apparatus 2 in that it includes a plurality of head drive systems 22 that move the plurality of measurement heads 21, respectively. However, the measurement apparatus 2h may also include a head drive system 22 that moves at least two measurement heads 21 together. Furthermore, the measurement apparatus 2h differs from the measurement apparatus 2 in that it includes a plurality of position measurement devices 23 that measure the positions of the plurality of measurement heads 21, respectively. However, the measurement apparatus 2h may also include a position measurement device 23 that measures the positions of at least two measurement heads 21 together. Other features of the measurement apparatus 2h may be similar to other features of the measurement apparatus 2.

[0201] The machining system SYSh of the eighth embodiment can achieve the same effects as those achieved by the machining system SYSa of the first embodiment described above. Furthermore, the machining system SYSh can simultaneously irradiate multiple locations on the workpiece W with multiple machining light beams EL via multiple machining heads 12. As a result, the throughput for machining the workpiece W is improved. Furthermore, the machining system SYSh can appropriately measure the workpiece W using multiple measurement heads 21.

[0202] If the machining system SYSh includes a plurality of machining heads 12, the control device 4 may measure the distance between the device origin AO and each of a plurality of machining origins PO corresponding to the respective machining heads 12 in the above-described B-CHK operation. Similarly, if the machining system SYSh includes a plurality of measuring heads 21, the control device 4 may measure the distance between the device origin AO and each of a plurality of measurement origins MO corresponding to the respective measuring heads 21 in the above-described B-CHK operation.

[0203] The machining system SYSh may also include a machining device 1h having a plurality of machining heads 12 and a measuring device 2 having a single measuring head 21. The machining system SYSh may also include a measuring device 2h having a plurality of measuring heads 21 and a machining device 1 having a single machining head 12.

[0204] Furthermore, at least one of the machining systems SYSb of the second embodiment to SYSg of the seventh embodiment described above may have the components specific to the eighth embodiment. The components specific to the eighth embodiment may include components related to the multiple machining heads 12 and the multiple measuring heads 21.

[0205] (9) Machining system SYSi of the ninth embodiment Next, a machining system SYS of a ninth embodiment (hereinafter, the machining system SYS of the ninth embodiment will be referred to as a "machining system SYSi") will be described with reference to Fig. 32. Fig. 32 is a system configuration diagram showing the system configuration of the machining system SYSi of the ninth embodiment.

[0206] 32, the machining system SYSi of the ninth embodiment differs from the machining system SYSh of the eighth embodiment in that it includes a machining apparatus 1i instead of the machining apparatus 1h. Other features of the machining system SYSi may be the same as other features of the machining system SYSh.

[0207] The processing apparatus 1i differs from the processing apparatus 1h in that it includes a plurality of processing light sources 11 that generate a plurality of processing light beams EL that are respectively emitted from a plurality of processing heads 12. Other features of the processing apparatus 1i may be similar to other features of the processing apparatus 1h.

[0208] The multiple processing light sources 11 may each generate multiple processing light beams EL with the same characteristics. Alternatively, at least two of the multiple processing light sources 11 may each generate at least two processing light beams EL with different characteristics. For example, the multiple processing light sources 11 may include a processing light source 11 that generates processing light beams EL with an emission time on the order of nanoseconds, a processing light source 11 that generates processing light beams EL with an emission time on the order of picoseconds, and a processing light source 11 that generates processing light beams EL with an emission time on the order of femtoseconds. Since the shorter the emission time, the higher the accuracy of processing the workpiece W using the processing light beams EL. Therefore, the processing system SYSi may roughly process the workpiece W using processing light beams EL with an emission time on the order of nanoseconds, finely process the workpiece W using processing light beams EL with an emission time on the order of picoseconds, and finish the workpiece W using processing light beams EL with an emission time on the order of femtoseconds.

[0209] The machining system SYSi of the ninth embodiment can achieve the same effects as those achieved by the machining system SYSh of the eighth embodiment. Furthermore, the machining system SYSi can appropriately machine the workpiece W using a plurality of processing lights EL with different characteristics.

[0210] At least one of the processing systems SYSb of the second embodiment to SYSg of the seventh embodiment may have the components specific to the ninth embodiment. The components specific to the ninth embodiment may include components related to a plurality of processing light sources 11.

[0211] (10) Machining system SYSj of the tenth embodiment Next, a processing system SYS of a tenth embodiment (hereinafter, the processing system SYS of the tenth embodiment will be referred to as the "processing system SYSj") will be described. The processing system SYSj of the tenth embodiment differs from the processing system SYSa of the first embodiment described above in that additional processing of the workpiece W may be performed by irradiating the workpiece W with processing light EL. For example, the processing system SYSj may form a three-dimensional structure ST on the workpiece W by performing additional processing.

[0212] As an example, the processing system SYSj may perform additive processing based on laser metal deposition (LMD). In this case, the processing system SYSj may form a model by processing a modeling material M with processing light EL. The modeling material M is a material that can be melted by irradiation with processing light EL of a predetermined intensity or higher. For example, at least one of a metallic material and a resinous material can be used as the modeling material M. However, other materials different from metallic materials and resinous materials may also be used as the modeling material M. The modeling material M is a powdered or granular material. In other words, the modeling material M is a powder or granular material. However, the modeling material M does not have to be a powder or granular material. For example, at least one of a wire-shaped modeling material and a gas-shaped modeling material may be used as the modeling material M. However, the processing system SYSj may form a three-dimensional structure ST by performing additive processing based on other additive processing methods.

[0213] An example of a processing system SYSj of the tenth embodiment that performs additional processing based on a laser build-up welding method is shown in FIGS. 33 and 34. FIG. 33 is a system configuration diagram showing the system configuration of the processing system SYSj of the tenth embodiment. FIG. 34 is a perspective view showing the appearance of the processing system SYSj of the tenth embodiment. As shown in FIGS. 33 and 34, the processing system SYSj of the tenth embodiment differs from the processing system SYSa of the first embodiment described above in that it includes a processing device 1j instead of the processing device 1. The processing system SYSj differs from the processing system SYSa in that it includes a material supply source 8j. Other features of the processing system SYSj may be similar to other features of the processing system SYSa.

[0214] The processing apparatus 1j differs from the processing apparatus 1 in that it includes a processing head 12j instead of the processing head 12. Other features of the processing apparatus 1j may be similar to other features of the processing apparatus 1. The processing head 12j differs from the processing head 12 in that it further includes a material nozzle 122j. Other features of the processing head 12j may be similar to other features of the processing head 12.

[0215] The material nozzle 122j supplies (e.g., injects, jets, spouts, or sprays) the building material M. For this reason, the material nozzle 122j may be referred to as a material supply device. Specifically, the material nozzle 122j is physically connected to a material supply source 8j, which is a supply source of the building material M, via a supply pipe (not shown). The material nozzle 122j supplies the building material M supplied from the material supply source 8j. The material nozzle 122j is aligned with the irradiation optical system 121 so as to supply the building material M toward the irradiation position of the processing light EL from the irradiation optical system 121 (i.e., the target irradiation area EA). Note that the material nozzle 122j and the irradiation optical system 121 may be aligned so that the material nozzle 122j supplies the building material M to a molten pool formed by the processing light EL emitted from the irradiation optical system 121. Note that the material nozzle 122j does not necessarily have to supply the building material M to the molten pool. For example, the processing system SYSj may melt the forming material M from the material nozzle 122j using processing light EL from the irradiation optical system 121 before the forming material M reaches the workpiece W, and adhere the molten forming material M to the workpiece W.

[0216] The machining system SYSj of the tenth embodiment as described above can appropriately perform additional machining on the workpiece W. Furthermore, similar to the machining system SYSh of the first embodiment described above, the machining system SYSj can appropriately perform additional machining on the workpiece W based on the result of reception of the processing light EL by the light receiving device 35 and the measurement result of the light receiving device 35 by the measurement head 21.

[0217] The processing system SYSj that performs additional processing may include, as the light-receiving device 35, the light-receiving device 35d that can function as an imaging device, as described in the fourth embodiment and the like. In this case, for example, the light-receiving element 352 may capture an image of at least a portion of the material nozzle 122j. The control device 4 may control the processing system SYSj based on the image of at least a portion of the material nozzle 122j. The control device 4 may output information about the state of the material nozzle 122j based on the image of at least a portion of the material nozzle 122j. In this case, the control device 4 may function as an information output device that outputs information about the state of the material nozzle 122j. For example, the light-receiving element 352 may capture an image of at least a portion of the modeling material M supplied from the material nozzle 122j. The control device 4 may control the processing system SYSj based on the image of at least a portion of the modeling material M. For example, the control device 4 may change (i.e., control) the supply mode of the modeling material M from the material supply source 8j through the material nozzle 122j based on the image of at least a portion of the modeling material M. The supply mode of the modeling material M may include at least one of the supply amount of the modeling material M and the supply timing (supply period) of the modeling material M. In this case, the control device 4 may function as a material supply mode change device that changes the supply mode of the modeling material M.

[0218] Furthermore, the processing system SYSj may include both the processing device 1 (or the processing head 12) that performs subtractive processing and the processing device 1j (or the processing head 12j) that performs additional processing. The processing system SYSj does not necessarily have to include the measuring device 2.

[0219] Furthermore, at least one of the machining systems SYSb of the second embodiment to SYSi of the ninth embodiment described above may have the components specific to the tenth embodiment. The components specific to the tenth embodiment may include components related to additional machining.

[0220] (11) Machining system SYSk of the eleventh embodiment Next, a processing system SYS of an eleventh embodiment (hereinafter, the processing system SYS of the eleventh embodiment will be referred to as the "processing system SYSk") will be described. The processing system SYSk of the eleventh embodiment differs from the processing system SYSa of the first embodiment described above in that the workpiece W may be machined using a tool 123k (see FIGS. 35 and 36 described later) for machining the workpiece W in addition to or instead of the processing light EL. That is, the processing system SYSk differs from the processing system SYSa in that the workpiece W may be machined. For example, the processing system SYSk may cut, grind, polish, or cut the workpiece W by bringing the tool 123k into contact with the workpiece W. For example, the processing system SYSk may machine the workpiece W so that the shape of the workpiece W has a desired shape. For example, the processing system SYSk may machine the workpiece W so that a desired structure is formed on the workpiece W. For example, the processing system SYSk may machine the workpiece W so that a desired structure is formed on the surface of the workpiece W. For example, the machining system SYSk may machine the workpiece W so that the surface of the workpiece W is polished.

[0221] An example of such a machining system SYSk of the eleventh embodiment is shown in FIGS. 35 and 36. FIG. 35 is a block diagram showing the system configuration of the machining system SYSk of the eleventh embodiment. FIG. 36 is a cross-sectional view showing the structure of the machining system SYSk of the eleventh embodiment. As shown in FIGS. 35 and 36, the machining system SYSk differs from the machining system SYSa in that it does not need to include a machining light source 11. Furthermore, the machining system SYSk differs from the machining system SYSa in that it does not need to include an irradiation optical system 121. Specifically, the machining system SYSk differs from the machining system SYSa in that it includes a machining apparatus 1k including a machining head 12k not including an irradiation optical system 121, instead of a machining apparatus 1 including a machining head 12 including an irradiation optical system 121. In other words, the machining system SYSk differs from the machining system SYSa in that it does not need to include the components required to irradiate the workpiece W with the machining light EL. Furthermore, the machining system SYSk differs from the machining system SYSa in that it includes a machining head 12k including a tool 123k instead of a machining head 12. Other features of the processing system SYSk may be similar to other features of the processing system SYSa.

[0222] The machining system SYSk of the eleventh embodiment as described above can appropriately perform machining on the workpiece W. Furthermore, the machining system SYSk may perform machining on the workpiece W based on the light receiving result by the light receiving device 35 and the measurement result of the light receiving device 35 by the measuring head 21.

[0223] The machining system SYSk that performs machining may include, as the light receiving device 35, the light receiving device 35d that can function as an imaging device, as described in the fourth embodiment and the like. In this case, for example, the light receiving element 352 may capture an image of at least a portion of the tool 123k. The control device 4 may control the machining system SYSk based on the image capturing result of at least a portion of the tool 123k. For example, the control device 4 may change (i.e., control) the movement path of the tool 123k (i.e., the machining path by the tool 123k, the so-called machining path) based on the image capturing result of at least a portion of the tool 123k. In this case, the control device 4 may function as a path changing device that changes the machining path of the tool 123k.

[0224] Furthermore, the processing system SYSk may include both the processing device 1 (or the processing head 12) that performs removal processing and the processing device 1k (or the processing head 12k) that performs mechanical processing. The processing system SYSk does not necessarily have to include the measuring device 2.

[0225] Furthermore, at least one of the machining systems SYSb of the second embodiment to SYSj of the tenth embodiment described above may have the components specific to the eleventh embodiment. The components specific to the eleventh embodiment may include components related to machining.

[0226] (12) Variations In the above description, the processing system SYS processes the workpiece W by irradiating the workpiece W with the processing light EL. However, the processing system SYS may also process the workpiece W by irradiating the workpiece W with an arbitrary energy beam. In this case, the processing system SYS may be provided with a beam source capable of irradiating the arbitrary energy beam in addition to or instead of the processing light source 11. Examples of the arbitrary energy beam include at least one of a charged particle beam and an electromagnetic wave. Examples of the charged particle beam include at least one of an electron beam and an ion beam.

[0227] (13) Supplementary Note The following additional notes are provided regarding the above-described embodiment. [Appendix 1] A cover member used in a processing system for processing an object, the cover member comprising an irradiation device that irradiates an object with an energy beam from a beam source, the irradiation device comprising: a cover member that covers a passage area through which the energy beam passes toward a light receiving section that receives the energy beam; [Appendix 2] The cover member moves between a first position that covers the passage area and a second position that does not cover the passage area. 2. The cover member of claim 1. [Appendix 3] When the energy beam is irradiated onto the object, the cover member is located at the first position, When the light receiving unit receives the energy beam, the cover member is located at the second position. 3. The cover member according to claim 2. [Appendix 4] the processing system includes a measurement device that measures the object with a measurement beam; The cover member covers a mark that is measured by the measuring device and has a predetermined positional relationship with the passing area. 4. A cover member according to any one of claims 1 to 3. [Appendix 5] A processing system that processes an object by irradiating the object with an energy beam, a placement device on which the object is placed; an irradiation device that irradiates the object with the energy beam; a light receiving device that receives the energy beam; Equipped with At least a portion of the light receiving device is located within a recess formed in the mounting device. Processing system. [Appendix 6] The light receiving device includes a beam passing member having a passing area for passing the energy beam, and a light receiving section for receiving the energy beam that has passed through the passing area. 6. The processing system of claim 5, comprising: [Appendix 7] an attenuation region that attenuates the energy beam and is disposed adjacent to the passing region; 10. The processing system of claim 6. [Appendix 8] The beam-passing member is disposed in the recess so that the passing region is located below a placement surface on which the object is placed. 8. The processing system of claim 6 or 7. [Appendix 9] The beam-passing member is located on the opposite side of the irradiation device from the opening of the recess facing the irradiation device. 9. The processing system of any one of appendixes 6 to 8. [Appendix 10] The beam passing member further includes a cover member for covering the passing area of ​​the beam passing member. 10. The processing system of any one of claims 6 to 9. [Appendix 11] The cover member moves between a first position that covers the passage area and a second position that does not cover the passage area. 11. The processing system of claim 10. [Appendix 12] When the energy beam is irradiated onto the object, the cover member is located at the first position, When the light receiving unit receives the energy beam, the cover member is located at the second position. 12. The processing system of claim 11. [Appendix 13] The cover member covers the beam-passing member. 13. The processing system of any one of claims 10 to 12. [Appendix 14] The recess is formed in a region different from the placement surface on which the object is placed. 14. The processing system of any one of claims 5 to 13. [Appendix 15] the mounting device includes a convex portion formed in an area different from a mounting surface on which the object is to be mounted, The depression is adjacent to the protrusion. 15. The processing system of any one of appendixes 5 to 14. [Appendix 16] The depression is surrounded by the protrusion. 16. The processing system of claim 15. [Appendix 17] a beam convergence position changing device that changes a convergence position of the energy beam along a traveling direction of the energy beam; The beam convergence position changing device changes the convergence position using information about a distance along the traveling direction between a placement surface on which the object is placed and at least a part of the light receiving unit. 17. The processing system of any one of clauses 5 to 16. [Appendix 18] The attenuating region blocks the energy beam. 18. The processing system of any one of appendixes 5 to 17. [Appendix 19] The passing region does not attenuate the energy beam. 19. The processing system of any one of clauses 5 to 18. [Appendix 20] A processing system for processing an object, comprising: a placement device on which the object is placed; a processing device for processing the object; an imaging device provided on the mounting device for imaging at least a part of the processing device; A processing system comprising: [Appendix 21] A processing system for processing an object, comprising: a placement device on which the object is placed; a processing device for processing the object; an imaging device that images at least a part of the processing device from the placement device side; A processing system comprising: [Appendix 22] the processing device includes an irradiation optical system that irradiates the object with an energy beam; The imaging device captures an image of an optical member included in the irradiation optical system. 22. The processing system of claim 20 or 21. [Appendix 23] The imaging device further includes a beam characteristic changing device that changes the characteristics of the energy beam based on the imaging result of the imaging device. 23. The processing system of claim 22. [Appendix 24] the processing device includes an irradiation optical system that irradiates the object with an energy beam, and a material supply device that supplies a material toward an irradiation position of the energy beam, The imaging device captures an image of a part of the material supply device. 24. The processing system of any one of clauses 20 to 23. [Appendix 25] The material supplying device further includes an information output device that outputs information about the state of the material supplying device based on the image pickup result of the image pickup device. 25. The processing system of claim 24. [Appendix 26] the processing device includes an irradiation optical system that irradiates the object with an energy beam, and a material supply device that supplies a material toward an irradiation position of the energy beam, The imaging device captures an image of the material from the material supply device. 26. The processing system of any one of clauses 20 to 25. [Appendix 27] The apparatus further includes a material supply mode change device that changes the mode of supplying the material by the material supply device based on the image pickup result by the imaging device. 27. The processing system of claim 26. [Appendix 28] the processing device comprises a tool for machining the object; The imaging device captures an image of at least a part of the tool. 28. The processing system of any one of clauses 20 to 27. [Appendix 29] The machining tool further includes a path change device that changes the machining path of the tool based on the image pickup result of the image pickup device. 29. The processing system of claim 28. [Appendix 30] The imaging device includes a first optical system that forms an intermediate image, an index plate disposed at a position where the intermediate image is formed, a second optical system that forms an image of the index plate, and an imaging element disposed at a position where the image of the index plate is formed. 30. The processing system of any one of clauses 20 to 29. [Appendix 31] A processing system for processing an object, comprising: a placement device on which the object is placed; a processing device that processes the object by irradiating the object with an energy beam; an imaging device provided on the mounting device for imaging the energy beam; A processing system comprising: [Appendix 32] A processing system for processing an object, comprising: a placement device on which the object is placed; a processing device that processes the object by irradiating the object with an energy beam; an imaging device that images the energy beam from the placement device side of the processing device; A processing system comprising: [Appendix 33] The imaging device further includes a control device that controls the irradiation position of the energy beam based on the imaging result of the imaging device. 34. The processing system of claim 32 or 33. [Appendix 34] The imaging device includes a first optical system that forms an intermediate image, an index plate disposed at a position where the intermediate image is formed, a second optical system that forms an image of the index plate, and an imaging element disposed at a position where the image of the index plate is formed. 34. The processing system of any one of claims 31 to 33. [Appendix 35] 1. A processing system for processing an object by irradiating the object with an energy beam from a beam source, comprising: a placement device for movably placing the object; an irradiation device that irradiates the object with the energy beam and includes an irradiation direction changing member that changes the irradiation direction of the energy beam; a beam measurement device that measures the emission direction of the energy beam; a control device that controls the emission direction changing member based on a measurement result of the energy beam by the beam measurement device; A processing system comprising: [Appendix 36] The beam measurement device includes a beam passing member having an attenuation region for attenuating the energy beam and a passing region for passing the energy beam, and a light receiving unit for receiving the energy beam that has passed through the passing region. 36. The processing system of claim 35. [Appendix 37] The beam measurement device measures the beam emission direction multiple times by changing the distance between the irradiation device and the passing area. 37. The processing system of claim 36. [Appendix 38] the irradiation device includes a focusing optical system that focuses the energy beam; The emission direction changing member is rotatably provided between the beam source and the focusing optical system. 38. The processing system of any one of clauses 35 to 37. [Appendix 39] The exit direction changing member is located at a position away from the entrance pupil position of the focusing optical system. 39. The processing system of claim 38. [Appendix 40] The irradiation device includes an irradiation position moving member that is rotatably provided between the beam source and the focusing optical system and that moves the irradiation position of the energy beam. 40. The processing system of claim 38 or 39. [Appendix 41] The distance between the entrance pupil of the focusing optical system and the exit direction changing member is greater than the distance between the entrance pupil and the irradiation position moving member. 41. The processing system of claim 40.

[0228] The requirements of the above-described embodiments may be combined as appropriate. Some of the requirements of the above-described embodiments may not be used. The requirements of the above-described embodiments may be replaced with requirements of other embodiments as appropriate. Furthermore, to the extent permitted by law, the disclosures of all publications and U.S. patents relating to the devices, etc. cited in the above-described embodiments are incorporated herein by reference.

[0229] Furthermore, the present invention can be modified as appropriate within the scope that does not contradict the gist or idea of ​​the invention that can be read from the claims and the entire specification, and processing systems and measuring components that involve such modifications are also included in the technical idea of ​​the present invention. [Explanation of symbols]

[0230] 1 Processing equipment 12 Processing head 2. Measuring equipment 21 Measuring head 3 Stage equipment 32 stages 35 Light receiving device 351 Beam passing member 352 Photodetector 4. Control device EL processing light SYS Machining System

Claims

1. A processing system that processes an object by irradiating the object with an energy beam, a placement device on which the object is placed; an irradiation device that irradiates the object with the energy beam; a beam-passing member having an attenuation region for attenuating the energy beam and a plurality of passing regions for passing the energy beam; and a light-receiving device having a light-receiving section for receiving the energy beam that has passed through the plurality of passing regions; A processing system comprising:

2. The relative position of the energy beam irradiated onto the beam-passing member with respect to the beam-passing member changes along the direction in which the plurality of passing regions are arranged. The processing system of claim 1 .

3. In a direction in which the plurality of passing areas are arranged, the size of the area on the beam passing member onto which the energy beam is irradiated by the irradiation device is larger than the pitch of the passing areas. The processing system according to claim 1 or 2.

4. In a direction in which the plurality of passing regions are arranged, the size of the region on the beam passing member onto which the energy beam is irradiated by the irradiation device is equal to or smaller than the pitch of the passing regions. The processing system according to claim 1 or 2.

5. During at least a part of a period during which the energy beam reaches the light receiving unit after passing through one of the plurality of passing regions, the energy beam reaches the light receiving unit after passing through another of the plurality of passing regions that is different from the one of the plurality of passing regions. The processing system according to any one of claims 1 to 4.

6. The plurality of passing areas include a first linear passing area extending in a first direction intersecting with the direction in which the plurality of passing areas are arranged, and a second linear passing area extending in a second direction intersecting obliquely with the first direction. The processing system according to any one of claims 1 to 5.

7. The plurality of passing areas include a third linear passing area extending in the first direction. The processing system according to claim 6 .

8. The plurality of passing areas include linear passing areas arranged along a first direction and extending in a second direction intersecting the first direction. The processing system according to any one of claims 1 to 7.

9. The plurality of passing areas include linear passing areas arranged along a third direction intersecting the first direction and extending in a fourth direction intersecting the third direction. The processing system according to claim 8 .

10. A measurement member used in a processing system for processing an object, the measurement member comprising: an irradiation device that irradiates an object with an energy beam from a beam source; and a measurement device that measures the object with a measurement beam, a passing area through which the energy beam passes toward a light receiving unit that receives the energy beam; and a mark that is measured by the measuring device and has a predetermined positional relationship with the passing area. Measuring components.

11. an attenuation region that attenuates the energy beam and is disposed adjacent to the passing region; The measuring member according to claim 10.

12. The passing region is provided within the attenuation region. The measuring member according to claim 11.

13. The processing system, comprising the measurement member according to any one of claims 10 to 12.

14. a placement device for movably placing the object; an acquisition device that acquires information about the position of the mounting device; Equipped with The acquisition device acquires information about the position of the mounting device when the light receiving unit receives the energy beam and information about the position of the mounting device when the mark is measured. The processing system of claim 13.

15. A processing system that processes an object by irradiating the object with an energy beam, a placement device on which the object is placed; an irradiation device that irradiates the object with the energy beam; a beam-passing member having an attenuation region for attenuating the energy beam and a passing region for passing the energy beam; and a light-receiving unit for receiving the energy beam that has passed through the passing region; a cover member that covers the passage area; A processing system comprising:

16. The cover member moves between a first position that covers the passage area and a second position that does not cover the passage area. The processing system of claim 15.

17. When the energy beam is irradiated onto the object, the cover member is located at the first position, When the light receiving unit receives the energy beam, the cover member is located at the second position. The processing system of claim 16.

18. the beam-passing member is disposed within a recess provided in the mounting device; When the cover member is located at the first position, the cover member and the beam-passing member form a space inside the recess.

18. The processing system according to claim 16 or 17.

19. a gas supply device that supplies gas to the space inside the recess; 20. The processing system of claim 18.

20. The cover member is moved using gas from the gas supply device.

20. The processing system of claim 19.

21. When the cover member is located at the first position, the beam-passing member is isolated from a space through which the energy beam passes.

21. The processing system according to any one of claims 16 to 20.

22. a gas supply device that supplies gas to the space on the irradiation device side of the beam passing member 22. The processing system according to any one of claims 15 to 21.

23. The gas supply device prevents adhesion of substances to at least a portion of the passage area by supplying the gas.

23. The processing system of claim 22.

24. The gas supply device removes substances adhering to at least a portion of the passage area by supplying the gas.

24. The processing system according to claim 22 or 23.

25. a measurement device that measures the object with a measurement beam; the beam-passing member has a mark that is measured by the measuring device; The cover member covers the mark.

25. The processing system of any one of claims 15 to 24.

26. A processing system that processes an object by irradiating the object with an energy beam, a placement device on which the object is placed; an irradiation device that irradiates the object with the energy beam; a light receiving device having a light receiving portion that receives the energy beam, at least a portion of which is provided in the placement device; a measurement device that measures at least one of the object and at least a part of the light receiving device; a moving device that moves the mounting device; an acquisition device for acquiring information regarding the position of the mounting device; a control device that controls the moving device; Equipped with The control device moving the placement device to a measurement position where the measurement device can measure at least a part of the light receiving device; acquiring, using the acquisition device, measurement position information relating to the position of the placement device that has been moved to the measurement position; The position of the placement device is controlled based on the measured position information. Processing system.

27. the control device uses the acquisition device to acquire, at a first timing, first measurement position information relating to a position of the placement device that has been moved to a position where the measurement device can measure at least a part of the light receiving device; the control device acquires, at a second timing different from the first timing, second measurement position information relating to a position of the placement device that has been moved to a position where the measurement device can measure at least a part of the light receiving device, using the acquisition device; The control device controls the position of the placement device based on the first measurement position information and the second measurement position information.

27. The processing system of claim 26.

28. The control device manages a change in the position of the mounting device, where the measurement device can measure at least a part of the light receiving device, based on the first measurement position information and the second measurement position information.

28. The processing system of claim 27.

29. The control device sets the first measurement position information acquired at the first timing as information on a reference position of the mounting device at which the measurement device can measure at least a part of the light receiving device, and controls the position of the mounting device based on the second measurement position information acquired at the second timing later than the first timing and the first measurement position information.

29. The processing system according to claim 27 or 28.

30. The light receiving device includes a beam passing member having a passing area for passing the energy beam.

30. The processing system of claim 29.

31. When the mounting device is in the reference position, the reference of the beam passing member is located at the center of the measurement range of the measurement device or in the vicinity of the center.

31. The processing system of claim 30.

32. The control device moving the placement device to an irradiation position where the irradiation device can irradiate at least a part of the light receiving device with the energy beam; acquiring irradiation position information relating to the position of the placement device that has moved to the irradiation position using the acquisition device; The position of the placement device is controlled based on the irradiation position information.

32. The processing system of any one of claims 26 to 31.

33. A processing system that processes an object by irradiating the object with an energy beam, a placement device on which the object is placed; an irradiation device that irradiates the object with the energy beam; a light receiving device having a light receiving portion that receives the energy beam, at least a portion of which is provided in the placement device; a measurement device that measures at least one of the object and at least a part of the light receiving device; a moving device that moves the mounting device; an acquisition device for acquiring information regarding the position of the mounting device; a control device that controls the moving device; Equipped with The control device moving the placement device to an irradiation position where the irradiation device can irradiate at least a part of the light receiving device with the energy beam; acquiring irradiation position information relating to the position of the placement device that has moved to the irradiation position using the acquisition device; The position of the placement device is controlled based on the irradiation position information. Processing system.

34. the control device acquires, at a third timing, first irradiation position information relating to a position of the placement device that has been moved to a position where the irradiation device can irradiate at least a part of the light receiving device with the energy beam, using the acquisition device; the control device acquires, using the acquisition device, second irradiation position information relating to a position of the placement device that has been moved to a position where the irradiation device can irradiate at least a part of the light receiving device with the energy beam at a fourth timing different from the third timing; The control device controls the position of the placement device based on the first irradiation position information and the second irradiation position information.

34. The processing system according to claim 32 or 33.

35. The control device manages a change in the position of the placement device based on the first irradiation position information and the second irradiation position information, so that the irradiation device can irradiate the energy beam onto at least a part of the light receiving device.

35. The processing system of claim 34.

36. The control device sets the first irradiation position information acquired at the third timing as information on a reference position of the mounting device where the irradiation device can irradiate the energy beam to at least a part of the light receiving device, and controls the position of the mounting device based on the second irradiation position information and the first irradiation position information acquired at the fourth timing that is later than the third timing.

36. The processing system according to claim 34 or 35.

37. The light receiving device includes a beam passing member having a passing area for passing the energy beam.

37. The processing system of any one of claims 33 to 36.

38. When the mounting device is in the reference position, the reference of the beam passing member is located at the center of the irradiation range of the energy beam by the irradiation device or in the vicinity of the center.

38. The processing system of claim 37.

39. 1. A processing system for processing an object by irradiating the object with an energy beam from a beam source, comprising: a placement device for movably placing the object; an irradiation device that irradiates the object with the energy beam; Equipped with the irradiation device includes an irradiation position moving member that moves an irradiation position of the energy beam, The moving direction of the mounting device and the moving direction of the irradiation position are the same direction. Processing system.

40. a moving device having a moving member that moves the mounting device along a linear direction; The irradiation position moving member moves along one moving direction to move the irradiation position along the linear direction.

40. The processing system of claim 39.

41. When the moving member is a first moving member, the moving device has a second moving member that moves the moving member along another linear direction intersecting the linear direction, The irradiation position moving member moves along another moving direction different from the one moving direction to move the irradiation position along the other intersecting linear direction.

41. The processing system of claim 40.

42. the irradiation device includes a focusing optical system that focuses the energy beam; The irradiation position moving member is rotatably provided between the beam source and the focusing optical system.

42. The processing system according to claim 40 or 41.

43. a light receiving device having a light receiving portion that receives the energy beam; a measuring device that measures a portion of the light receiving device that is provided on the placement device; Equipped with 43. The processing system of any one of claims 39 to 42.

44. and an acquisition device that acquires information about the position of the mounting device when the light receiving unit receives the energy beam and information about the position of the mounting device when the measurement device measures the portion of the light receiving unit that is provided on the mounting device.

44. The processing system of claim 43.

45. The light receiving device receives the energy beam irradiated at a first irradiation position, and receives the energy beam irradiated at a second irradiation position different from the first irradiation position along the movement direction.

45. The processing system of claim 43 or 44.

46. The light receiving device receives the energy beam when the mounting device is located at a first position, and receives the energy beam when the mounting device is located at a second position different from the first position along the movement direction.

46. ​​The processing system of any one of claims 43 to 45.

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