Semiconductor equipment

Abstract

To improve transmission characteristics. [Solution] The semiconductor device according to the embodiment comprises a first transistor and a second transistor whose respective source electrodes are electrically connected, a light-emitting element, a photodetector having a first cathode electrode and a second cathode electrode, which turns the first transistor and the second transistor on or off depending on the light-emitting state of the light-emitting element, a first filter element that electrically connects the first cathode electrode of the photodetector and the source electrode of the first transistor, and a second filter element that electrically connects the second cathode electrode of the photodetector and the source electrode of the second transistor.

Description

Technical Field

[0001] Embodiments relate to semiconductor devices.

Background Art

[0002] As a semiconductor device, a photo relay device including a light emitting element and a light receiving element is known. The photo relay device is a contactless relay and is used for transmitting AC signals and DC signals.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0004] Improve transmission characteristics.

Means for Solving the Problems

[0005] The semiconductor device according to the embodiment includes a first transistor and a second transistor in which source electrodes are electrically connected to each other, a light emitting element, a light receiving element having a first cathode electrode and a second cathode electrode, and turning on or off the first transistor and the second transistor according to the light emission state of the light emitting element, a first filter element electrically connecting between the first cathode electrode of the light receiving element and the source electrode of the first transistor, and a second filter element electrically connecting between the second cathode electrode of the light receiving element and the source electrode of the second transistor.

Brief Description of the Drawings

[0006] [Figure 1] A circuit diagram showing an example of the circuit configuration of the semiconductor device according to the first embodiment. [Figure 2] A perspective view showing an example of the structure of a semiconductor device according to the first embodiment. [Figure 3] A plan view showing an example of a planar layout of a semiconductor device according to the first embodiment. [Figure 4] A circuit diagram showing an example of the circuit configuration of a semiconductor device according to the second embodiment. [Figure 5] A perspective view showing an example of the structure of a semiconductor device according to the second embodiment. [Figure 6] A plan view showing an example of a planar layout of a semiconductor device according to the second embodiment. [Figure 7] A plan view showing an example of a planar layout of a semiconductor device according to the first modified example. [Figure 8] A plan view showing an example of a planar layout of a semiconductor device according to the second modified example. [Modes for carrying out the invention]

[0007] Embodiments will be described below with reference to the drawings. In the following description, components having the same function and configuration will be denoted by the same reference numeral. Also, the dimensions and proportions in the drawings are not necessarily the same as those of reality.

[0008] The semiconductor device according to the embodiment is, for example, a photorelay device for transmitting AC signals and DC signals. The semiconductor device according to the embodiment is, for example, an electronic component package. In the following description, AC signals and DC signals will also be simply referred to as signals.

[0009] 1. First Embodiment A semiconductor device according to the first embodiment will be described.

[0010] Figure 1 is a circuit diagram showing an example of the circuit configuration of a semiconductor device according to the first embodiment.

[0011] The semiconductor device 1 includes electrodes 80, 81, 82a, and 82b. Electrodes 80 and 81 are terminals mounted outside the package, and a voltage for driving the semiconductor device 1 is supplied from an external source. While the semiconductor device 1 is driven, it can transmit signals via electrodes 82a and 82b.

[0012] The semiconductor device 1 further includes MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) 20a and 20b, a photodetector 40, a light-emitting element 60, and ferrite beads FB1 and FB2. MOSFETs 20a and 20b are, for example, enhancement-type N-channel MOSFETs. The photodetector 40 is, for example, a sensor including a PDA (Photo Diode Array) or a phototransistor. The following description will focus on the case where the photodetector 40 includes a PDA. The light-emitting element 60 is, for example, an LED (Light Emitting Diode).

[0013] The anode electrode of the light-emitting element 60 is connected to electrode 80. The cathode electrode of the light-emitting element 60 is connected to electrode 81. The light-emitting element 60 is driven by the power supplied to electrodes 80 and 81. This causes the light-emitting state of the light-emitting element 60 to be either on (lit) or off (not lit).

[0014] The light-receiving element 40 includes, for example, a plurality of photodiodes 40a connected in series and a control circuit 40b. The number of photodiodes 40a is, for example, several to several dozen. The ends of each of the plurality of photodiodes 40a connected in series are connected to the control circuit 40b. The control circuit 40b uses the photovoltaic power generated by the plurality of photodiodes 40a to turn on MOSFETs 20a and 20b.

[0015] The gate of MOSFET 20a is connected to the first anode electrode of the light receiving element 40. The gate of MOSFET 20b is connected to the second anode electrode of the light receiving element 40. The source of MOSFET 20a is connected to the first cathode electrode of the light receiving element 40 via the ferrite bead FB1. The source of MOSFET 20b is connected to the second cathode electrode of the light receiving element 40 via the ferrite bead FB2. The drain of MOSFET 20a is connected to the electrode 82a. The drain of MOSFET 20b is connected to the electrode 82b.

[0016] Note that the first anode electrode and the second anode electrode of the light receiving element 40 are configured to have the same potential by being electrically connected inside the light receiving element 40, for example. The first cathode electrode and the second cathode electrode of the light receiving element 40 are configured to have the same potential by being electrically connected inside the light receiving element 40, for example.

[0017] In the circuit configuration of the semiconductor device 1 as described above, when the light emitting element 60 changes from the off state to the on state, light is irradiated from the light emitting element 60. The light receiving element 40 turns on MOSFETs 20a and 20b from the off state using the voltage generated by the photovoltaic effect of the light from the light emitting element 60. As a result, the electrodes 82a and 82b are electrically connected. In this way, the semiconductor device 1 transmits the signal supplied to one of the electrodes 82a and 82b to the other of the electrodes 82a and 82b via MOSFETs 20a and 20b.

[0018] Also, when the light emitting element 60 changes from the on state to the off state, the irradiation of light from the light emitting element 60 stops. As a result, MOSFETs 20a and 20b turn off from the on state. In this way, the semiconductor device 1 electrically insulates between the electrodes 82a and 82b.

[0019] Next, the structure of the semiconductor device 1 will be described using FIG. 2. FIG. 2 is a perspective view showing an example of the structure of the semiconductor device according to the first embodiment.

[0020] In the following description, the Z direction corresponds to the direction perpendicular to the surface of the substrate on which the semiconductor device 1 is formed. The X direction corresponds to the short-side direction on the surface of the substrate. The Y direction corresponds to the long-side direction on the surface of the substrate and is, for example, orthogonal to the X direction. Note that in Figure 2, the wiring diagram is omitted for clarity. The wiring will be described later.

[0021] The semiconductor device 1 further includes a substrate B, electrode pads 10a, 10b, 70, and 71, a support base 30, an adhesive layer 50, and a sealing material S. In the following description, the side of the substrate B on which the MOSFET 20a is provided will be referred to as the upper side. The side of the substrate B opposite to the MOSFET 20a will be referred to as the lower side.

[0022] Substrate B is, for example, a circuit board made of BT (bismaleimide triazine) resin or a flexible printed circuit board (FPC) made of polyimide.

[0023] Electrode pads 10a, 10b, 70, and 71 are electrode pads for component mounting provided on the upper surface of substrate B and are electrically connected to external electrodes 82a, 82b, 80, and 81. Electrode pads 10a, 10b, 70, and 71 are, for example, metal foil containing copper. Electrode pads 10a and 70 are spaced apart in the Y direction. Electrode pads 10b and 71 are spaced apart in the Y direction. Also, electrode pads 10a and 10b are spaced apart in the X direction. Electrode pads 70 and 71 are spaced apart in the X direction.

[0024] MOSFET 20a includes electrodes 21a, 22a, and an electrode located at the bottom of MOSFET 20a (not shown in Figure 2). Electrodes 21a and 22a are located on the top surface of MOSFET 20a. The electrode located at the bottom of MOSFET 20a contacts the electrode pad 10a, for example, on the bottom surface of MOSFET 20a, via a conductive paste or the like. The electrode located at the bottom of MOSFET 20a may have a size equivalent to the bottom surface of MOSFET 20a. Electrode 21a functions as the source electrode of MOSFET 20a. Electrode 22a functions as the gate electrode of MOSFET 20a. The electrode located at the bottom of MOSFET 20a functions as the drain electrode of MOSFET 20a.

[0025] MOSFET 20b includes electrodes 21b, 22b, and an electrode located at the bottom of MOSFET 20b (not shown in Figure 2). Electrodes 21b and 22b are located on the top surface of MOSFET 20b. The electrode located at the bottom of MOSFET 20b contacts the electrode pad 10b on the bottom surface of MOSFET 20b via a conductive paste or the like. The electrode located at the bottom of MOSFET 20b may, for example, have the same size as the bottom surface of MOSFET 20b. Electrode 21b functions as the source electrode of MOSFET 20b. Electrode 22b functions as the gate electrode of MOSFET 20b. The electrode located at the bottom of MOSFET 20b functions as the drain electrode of MOSFET 20b.

[0026] With the above arrangement, MOSFETs 20a and 20b are, for example, spaced apart in the X direction.

[0027] The support base 30 is provided on the upper surface of the substrate B. The support base 30 is positioned so as to be sandwiched in the Y direction by, for example, the electrode pads 10a and 10b and the electrode pads 70 and 71. The support base 30 has a plate-like shape that extends in the X and Y directions. The support base 30 supports the light-receiving element 40 and the light-emitting element 60. The support base 30 may be made of, for example, a conductor or an insulator. The support base 30 may be made of, for example, a composite material of a conductor and an insulator. From the viewpoint of reducing the coupling capacitance with MOSFETs 20a and 20b, it is more preferable that the support base 30 be an insulator.

[0028] The light-receiving element 40 is provided so as to be in contact with the upper surface of the support base 30. Furthermore, the light-receiving element 40 is arranged such that, for example, the light-receiving element 40 has a light-receiving surface on its upper surface.

[0029] The photodetector 40 includes electrodes 41, 42, 43, and 44. Electrodes 41 to 44 are positioned on the upper surface of the photodetector 40. Electrodes 41 and 43 function as the first and second cathode electrodes of the photodetector 40, respectively. Electrodes 42 and 44 function as the first and second anode electrodes of the photodetector 40, respectively. That is, electrodes 41 and 43 are electrically connected within the photodetector 40. Electrodes 42 and 44 are electrically connected within the photodetector 40.

[0030] The light-emitting element 60 is positioned above the light-receiving element 40. The light-emitting element 60 is arranged so that its lower surface has a light-emitting surface. The light-emitting surface of the light-emitting element 60 faces the light-receiving surface of the light-receiving element 40.

[0031] The light-emitting element 60 includes electrodes 61 and 62. Electrodes 61 and 62 are positioned on the upper surface of the light-emitting element 60. Electrode 61 functions as the anode electrode of the light-emitting element 60. Electrode 62 functions, for example, as the cathode electrode of the light-emitting element 60.

[0032] An adhesive layer 50 is provided between the light-emitting element 60 and the light-receiving element 40, in contact with each of them. The adhesive layer 50 is, for example, an insulating material that is transparent to light emitted from the light-emitting element 60.

[0033] The ferrite bead FB1 is a filter element that, for example, has a rectangular prism shape and has the function of improving the high-frequency characteristics of the signal passing through it. The ferrite bead FB1 includes, for example, electrodes FP11 and FP12. Electrode FP11 is provided at the first end of the ferrite bead FB1. Electrode FP12 is provided at the second end of the ferrite bead FB1. The ferrite bead FB1 is positioned to bridge the gap between the photodetector 40 and the MOSFET 20a. Specifically, at the first end of the ferrite bead FB1, electrode FP11 is in contact with electrode 41 of the photodetector 40 via a conductive paste or the like. At the second end of the ferrite bead FB1, electrode FP12 is in contact with electrode 21a of the MOSFET 20a via a conductive paste or the like. In this way, the ferrite bead FB1 electrically connects electrode 41 and electrode 21a.

[0034] The ferrite bead FB2 is a filter element that, for example, has a rectangular prism shape and has the function of improving the high-frequency characteristics of the signal passing through it. The ferrite bead FB2 includes, for example, electrodes FP21 and FP22. Electrode FP21 is provided at the first end of the ferrite bead FB2. Electrode FP22 is provided at the second end of the ferrite bead FB2. The ferrite bead FB2 is positioned to bridge the gap between the photodetector 40 and the MOSFET 20b. Specifically, at the first end of the ferrite bead FB2, electrode FP21 is in contact with electrode 43 of the photodetector 40 via a conductive paste or the like. At the second end of the ferrite bead FB2, electrode FP22 is in contact with electrode 21b of the MOSFET 20b via a conductive paste or the like. As a result, the ferrite bead FB2 electrically connects electrode 43 and electrode 21b.

[0035] With the above arrangement, the ferrite beads FB1 and FB2 are spaced apart in the X direction. From the viewpoint of ease of mounting, it is preferable that each of the ferrite beads FB1 and FB2 is provided horizontally to the substrate B. For this reason, it is preferable that the upper surface of the photodetector 40 and the upper surfaces of each of the MOSFETs 20a and 20b are at the same position in the Z direction. In other words, it is preferable that the height from the substrate B of the upper surface of the photodetector 40 and the upper surfaces of each of the MOSFETs 20a and 20b are approximately equal.

[0036] Each of the electrodes 80, 81, 82a, and 82b is provided, for example, so as to be in contact with the lower surface of the substrate B.

[0037] Signals are transmitted between electrodes 80 and 81 by, for example, devices and circuits not shown. Although not shown in Figure 2, electrode 80 is electrically connected to electrode pad 70 via, for example, a conductor (via) that penetrates substrate B. Also, although not shown in Figure 2, electrode 81 is electrically connected to electrode pad 71 via, for example, a conductor (via) that penetrates substrate B, similar to electrode 80.

[0038] Electrodes 82a and 82b are connected to circuits and the like, respectively, provided outside the semiconductor device 1. Although not shown in Figure 2, electrode 82a is electrically connected to an electrode located below the MOSFET 20a via, for example, a conductor (via) penetrating the substrate B, an electrode pad 10a, and a conductive paste. Also, although not shown in Figure 2, electrode 82b is electrically connected to an electrode located below the MOSFET 20b via, for example, a conductor (via) penetrating the substrate B, an electrode pad 10b, and a conductive paste, similar to electrode 82a.

[0039] The encapsulant S is provided to cover the MOSFETs 20a and 20b, the support base 30, the photodetector 40, the light-emitting element 60, the ferrite beads FB1 and FB2, and the electrode pads 10a, 10b, 70, and 71. The encapsulant S may include, for example, an opaque material.

[0040] In the configuration of the semiconductor device 1 as described above, the electrode pads 10a and 70, MOSFET 20a, and ferrite bead FB1, and the electrode pads 10b and 71, MOSFET 20b, and ferrite bead FB2 can be arranged symmetrically, for example, with respect to the YZ plane.

[0041] Next, the internal wiring of the semiconductor device 1 will be explained using Figure 3. Figure 3 is a plan view showing an example of the planar structure of the semiconductor device according to the first embodiment.

[0042] The semiconductor device 1 further includes wirings W1, W2, W3, W4, and W5. Wirings W1 to W5, together with MOSFETs 20a and 20b, a support base 30, a photodetector 40, a light-emitting element 60, ferrite beads FB1 and FB2, and electrode pads 10a, 10b, 70, and 71, are covered with a sealing material S.

[0043] Wirings W1 to W5 are conductors composed of conductive materials. Specifically, for example, wirings W1 to W5 are wires (bonding wires) formed by wire bonding.

[0044] Wiring W1 electrically connects electrode pad 70 and electrode 61. Wiring W2 electrically connects electrode pad 71 and electrode 62. Wiring W3 electrically connects electrode 42 and electrode 22a. Wiring W4 electrically connects electrode 44 and electrode 22b. Wiring W5 electrically connects electrode 21a and electrode 21b. In the example in Figure 3, electrodes 21a and 21b are shown to be connected by two wires W5, but this is not the only case. The number of wires W5 connecting electrode 21a and electrode 21b may be one or three or more.

[0045] In the configuration described above, wirings W1 and W2 are provided, for example, so that each extends in the Y direction in a plan view and has an equivalent wiring length. Wires W3 and W4 are provided, for example, so that each extends in the Y direction in a plan view and has an equivalent wiring length, so that they do not come into contact with the ferrite beads FB1 and FB2, respectively. The two wires W5 are provided, for example, so that they extend in the X direction in a plan view and have an equivalent wiring length. Wires W1 and W3 and wires W2 and W4 can be arranged, for example, symmetrically with respect to the YZ plane.

[0046] Furthermore, electrode 41 and electrode 21a are electrically connected by a ferrite bead FB1 without the need for wiring. Electrode 43 and electrode 21b are electrically connected by a ferrite bead FB2 without the need for wiring.

[0047] According to the first embodiment, the ferrite beads FB1 and FB2 are placed inside the package of the semiconductor device 1, which is sealed with the sealing material S. This makes it possible to suppress the generation of noise in the signal between MOSFETs 20a and 20b without mounting the ferrite beads outside the package of the semiconductor device 1. Therefore, it is possible to improve the signal transmission characteristics between MOSFETs 20a and 20b while suppressing an increase in the mounting area outside the package.

[0048] To elaborate, if a photorelay device has a first signal flowing between the sources of two MOSFETs and a second signal flowing in a direction intersecting the first signal, noise may be generated in the first signal due to interaction with the second signal. Since such noise occurs in high-frequency bands, such as around 3 GHz, it can become a significant degrading factor for the transmission characteristics of the photorelay device.

[0049] According to the first embodiment, the semiconductor device 1 includes ferrite beads FB1 and FB2 inside the package. This eliminates the need to mount filter elements outside the package, thereby suppressing an increase in the external mounting area of ​​the package.

[0050] Furthermore, ferrite bead FB1 is placed between the first cathode electrode of the photodetector 40 and the source electrode of the MOSFET 20a. Ferrite bead FB2 is placed between the second cathode electrode of the photodetector 40 and the source electrode of the MOSFET 20b. This allows for a shorter unnecessary stub length compared to when the filter element is mounted outside the package.

[0051] Furthermore, the ferrite bead FB1 electrically connects the first cathode electrode of the photodetector 40 and the source electrode of the MOSFET 20a without the need for wiring. The ferrite bead FB2 electrically connects the second cathode electrode of the photodetector 40 and the source electrode of the MOSFET 20b without the need for wiring. This reduces the number of unnecessary stubs to a negligible degree. As a result, the transmission characteristics in the high-frequency band can be improved. In addition, the number of wires connecting the photodetector 40 and the MOSFETs 20a and 20b can be reduced, thereby reducing the manufacturing cost of the semiconductor device 1.

[0052] Furthermore, the light-receiving element 40 and the MOSFETs 20a and 20b are positioned so that their upper surfaces are in the same position in the Z direction. This allows the electrodes FP11 and FB12 of the ferrite bead FB1 to be easily mounted on the upper surface of electrode 41 and the upper surface of electrode 21a, respectively. The electrodes FP21 and FB22 of the ferrite bead FB2 can be easily mounted on the upper surface of electrode 43 and the upper surface of electrode 21b, respectively. This helps to suppress an increase in the manufacturing load of the semiconductor device 1.

[0053] 2. Second Embodiment Next, a semiconductor device according to the second embodiment will be described. The following description will mainly focus on configurations that differ from the first embodiment. Configurations equivalent to those in the first embodiment will be omitted as appropriate.

[0054] Figure 4 is a circuit diagram showing an example of the circuit configuration of a semiconductor device according to the second embodiment. Figure 4 corresponds to Figure 1 in the first embodiment.

[0055] The semiconductor device 1A further includes electrodes 80, 81, 82a, and 82b, MOSFETs 20a and 20b, a photodetector 40, and a light-emitting element 60, as well as ferrite beads FB3, FB4, FB5, and FB6.

[0056] The gate of MOSFET 20a is connected to the first anode electrode of the photodetector 40 via ferrite bead FB5. The gate of MOSFET 20b is connected to the second anode electrode of the photodetector 40 via ferrite bead FB6. The source of MOSFET 20a is connected to the first cathode electrode of the photodetector 40 via ferrite bead FB3. The source of MOSFET 20b is connected to the second cathode electrode of the photodetector 40 via ferrite bead FB4. The drain of MOSFET 20a is connected to electrode 82a. The drain of MOSFET 20b is connected to electrode 82b.

[0057] Next, the structure of the semiconductor device 1A will be described using Figure 5. Figure 5 is a perspective view showing an example of the structure of the semiconductor device according to the second embodiment. Figure 5 corresponds to Figure 2 in the first embodiment.

[0058] The semiconductor device 1A further includes a substrate B, electrode pads 10a, 10b, 70, and 71, a support base 30, an adhesive layer 50, and a sealing material S, as well as pads 90, 91, 92, 93, 94, 95, 96, and 97.

[0059] Pads 90, 91, 92, 93, 94, 95, 96, and 97 are component mounting pads provided on the upper surface of substrate B, between the support base 30 and electrode pads 10a and 10b. Pads 90, 91, 92, 93, 94, 95, 96, and 97 are conductive pads made of metal foil containing copper, for example. Pads 90 and 91 are spaced apart in the Y direction. Pads 92 and 93 are spaced apart in the Y direction. Pads 94 and 95 are spaced apart in the Y direction. Pads 96 and 97 are spaced apart in the Y direction. Pads 90, 92, 94, and 96 are spaced apart in this order in the X direction. Pads 91, 93, 95, and 97 are spaced apart in this order in the X direction.

[0060] The ferrite bead FB3 is a filter element that, for example, has a rectangular prism shape and has the function of improving the high-frequency characteristics of signals passing through it. The ferrite bead FB3 includes, for example, electrodes FP31 and FP32. Electrode FP31 is provided at the first end of the ferrite bead FB3. Electrode FP32 is provided at the second end of the ferrite bead FB3. The ferrite bead FB3 is arranged to bridge the gap between pads 92 and 93. Specifically, at the first end of the ferrite bead FB3, electrode FP31 is in contact with pad 92 via a conductive paste or the like. At the second end of the ferrite bead FB3, electrode FP32 is in contact with pad 93 via a conductive paste or the like. In this way, the ferrite bead FB3 electrically connects pads 92 and 93.

[0061] The ferrite bead FB4 is a filter element that, for example, has a rectangular prism shape and has the function of improving the high-frequency characteristics of the signal passing through it. The ferrite bead FB4 includes, for example, electrodes FP41 and FP42. Electrode FP41 is provided at the first end of the ferrite bead FB4. Electrode FP42 is provided at the second end of the ferrite bead FB4. The ferrite bead FB4 is arranged to bridge the gap between pad 94 and pad 95. Specifically, at the first end of the ferrite bead FB4, electrode FP41 is in contact with pad 94 via a conductive paste or the like. At the second end of the ferrite bead FB4, electrode FP42 is in contact with pad 95 via a conductive paste or the like. As a result, the ferrite bead FB4 electrically connects pad 94 and pad 95.

[0062] The ferrite bead FB5 is a filter element that, for example, has a rectangular prism shape and has the function of improving the high-frequency characteristics of the signal passing through it. The ferrite bead FB5 includes, for example, electrodes FP51 and FP52. Electrode FP51 is provided at the first end of the ferrite bead FB5. Electrode FP52 is provided at the second end of the ferrite bead FB5. The ferrite bead FB5 is arranged to bridge the gap between pad 90 and pad 91. Specifically, at the first end of the ferrite bead FB5, electrode FP51 is in contact with pad 90 via a conductive paste or the like. At the second end of the ferrite bead FB5, electrode FP52 is in contact with pad 91 via a conductive paste or the like. In this way, the ferrite bead FB5 electrically connects pad 90 and pad 91.

[0063] The ferrite bead FB6 is a filter element that, for example, has a rectangular prism shape and has the function of improving the high-frequency characteristics of the signal passing through it. The ferrite bead FB6 includes, for example, electrodes FP61 and FP62. Electrode FP61 is provided at the first end of the ferrite bead FB6. Electrode FP62 is provided at the second end of the ferrite bead FB6. The ferrite bead FB6 is arranged to bridge the gap between pads 96 and 97. Specifically, at the first end of the ferrite bead FB6, electrode FP61 is in contact with pad 96 via a conductive paste or the like. At the second end of the ferrite bead FB6, electrode FP62 is in contact with pad 97 via a conductive paste or the like. In this way, the ferrite bead FB6 electrically connects pads 96 and 97.

[0064] With the arrangement described above, the ferrite beads FB3, FB4, FB5, and FB6 are spaced apart in the X direction.

[0065] The sealing material S is provided so as to cover the MOSFETs 20a and 20b, the support base 30, the light-receiving element 40, the light-emitting element 60, the ferrite beads FB3, FB4, FB5, and FB6, as well as the electrode pads 10a, 10b, 70, and 71, and the pads 90, 91, 92, 93, 94, 95, 96, and 97.

[0066] In the configuration of semiconductor device 1A as described above, the electrode pads 10a and 70, MOSFET 20a, and ferrite beads FB3 and FB5, and the electrode pads 10b and 71, MOSFET 20b, and ferrite beads FB4 and FB6 can be arranged symmetrically with respect to the YZ plane, for example.

[0067] Next, the internal wiring of the semiconductor device 1A will be explained using Figure 6. Figure 6 is a plan view showing an example of the planar structure of the semiconductor device according to the second embodiment. Figure 6 corresponds to Figure 3 in the first embodiment.

[0068] The semiconductor device 1A further includes wirings W6, W7, W8, W9, W10, W11, W12, and W13 in addition to wirings W1, W2, and W5. Wirings W1, W2, and W5-W13 are covered with a sealing material S together with MOSFETs 20a and 20b, support base 30, photodetector 40, light-emitting element 60, ferrite beads FB3-FB6, and electrode pads 10a, 10b, 70, and 71, and pads 90-97.

[0069] Wires W1, W2, and W5-W13 are conductors made of conductive material. Specifically, for example, wires W1, W2, and W5-W13 are wires (bonding wires) formed by wire bonding.

[0070] Wiring W6 electrically connects electrode 41 and pad 92. Wiring W7 electrically connects electrode 43 and pad 94. Wiring W8 electrically connects electrode 42 and pad 90. Wiring W9 electrically connects electrode 44 and pad 96. Wiring W10 electrically connects pad 93 and electrode 21a. Wiring W11 electrically connects pad 95 and electrode 21b. Wiring W12 electrically connects pad 91 and electrode 22a. Wiring W13 electrically connects pad 97 and electrode 22b.

[0071] In the configuration described above, wirings W6 and W7 are provided, for example, to have equivalent wiring lengths. Wirings W8 and W9 are provided, for example, to each extend in the Y direction in a plan view and to have equivalent wiring lengths. Wirings W10 and W11 are provided, for example, to have equivalent wiring lengths. Wirings W12 and W13 are provided, for example, to each extend in the Y direction in a plan view and to have equivalent wiring lengths. Wirings W1, W6, W8, W10, and W12 and wirings W2, W7, W9, W11, and W13 can be arranged, for example, symmetrically with respect to the YZ plane.

[0072] Furthermore, pads 90 and 91 are electrically connected by ferrite bead FB5 without the need for wiring. Pads 92 and 93 are electrically connected by ferrite bead FB3 without the need for wiring. Pads 94 and 95 are electrically connected by ferrite bead FB4 without the need for wiring. Pads 96 and 97 are electrically connected by ferrite bead FB6 without the need for wiring.

[0073] According to the second embodiment, the semiconductor device 1A includes ferrite beads FB3, FB4, FB5, and FB6 inside the package. This eliminates the need to mount filter elements outside the package, thereby suppressing an increase in the external mounting area of ​​the package.

[0074] Furthermore, the ferrite bead FB3 is placed between the first cathode electrode of the photodetector 40 and the source electrode of the MOSFET 20a. The ferrite bead FB4 is placed between the second cathode electrode of the photodetector 40 and the source electrode of the MOSFET 20b. This allows for a shorter unnecessary stub length compared to when the filter element is mounted outside the package.

[0075] Furthermore, the ferrite bead FB5 is placed between the first anode electrode of the photodetector 40 and the gate electrode of the MOSFET 20a. The ferrite bead FB6 is placed between the second anode electrode of the photodetector 40 and the gate electrode of the MOSFET 20b. This allows for a reduction in the stub length caused not only by the source signal but also by the gate signal. As a result, the transmission characteristics can be further improved.

[0076] Furthermore, the ferrite beads FB3, FB4, FB5, and FB6 are provided on the upper surfaces of pads 90 and 91, 92 and 93, 94 and 95, and 96 and 97, respectively. Pads 90, 91, 92, 93, 94, 95, 96, and 97 are provided between the support base 30 and the electrode pads 10a and 10b. This reduces the manufacturing load compared to the case where the ferrite beads are provided to bridge the electrodes on the upper surfaces of the light-receiving element and the MOFET, respectively.

[0077] 3. Others In the second embodiment described above, the wirings W6, W7, W8, W9, W10, W11, W12, and W13 are shown to be connected to pads 92, 94, 90, 96, 93, 95, 91, and 97, respectively, but the embodiment is not limited to this. For example, each of the wirings W6, W7, W8, W9, W10, W11, W12, and W13 may be directly connected to a ferrite bead.

[0078] Figure 7 is a plan view showing an example of the planar structure of a semiconductor device according to the first modified example. Figure 7 corresponds to Figure 6 in the second embodiment.

[0079] As shown in Figure 7, wiring W6 may be connected to electrode FP31 instead of pad 92. Wiring W7 may be connected to electrode FP41 instead of pad 94. Wiring W8 may be connected to electrode FP51 instead of pad 90. Wiring W9 may be connected to electrode FP61 instead of pad 96. Wiring W10 may be connected to electrode FP32 instead of pad 93. Wiring W11 may be connected to electrode FP42 instead of pad 95. Wiring W12 may be connected to electrode FP52 instead of pad 91. Wiring W13 may be connected to electrode FP62 instead of pad 97.

[0080] In this case, the pads on which each of the ferrite beads FB3, FB4, FB5, and FB6 are mounted may be insulating pads instead of conductive pads. This reduces the coupling capacitance between the pads supporting each of the ferrite beads FB3, FB4, FB5, and FB6 and the electrode pads 10a and 10b.

[0081] Furthermore, in the second embodiment described above, the two electrodes FP of each ferrite bead FB3, FB4, FB5, and FB6 are arranged to face each other in the Y direction, but the embodiment is not limited to this. For example, the two electrodes FP of each ferrite bead FB3, FB4, FB5, and FB6 may be arranged to face each other in the Z direction.

[0082] Figure 8 is a plan view showing an example of the planar structure of a semiconductor device according to a second modified example. Figure 8 corresponds to Figure 6 in the second embodiment.

[0083] As shown in Figure 8, the ferrite bead FB3 may be provided on the upper surface of the pad 92 such that the electrode FP31 is in contact with it. The ferrite bead FB4 may be provided on the upper surface of the pad 94 such that the electrode FP41 is in contact with it. The ferrite bead FB5 may be provided on the upper surface of the pad 90 such that the electrode FP51 is in contact with it. The ferrite bead FB6 may be provided on the upper surface of the pad 96 such that the electrode FP61 is in contact with it.

[0084] In this case, wiring W10 may be connected to electrode FP32 without going through an electrode provided on substrate B. Wiring W11 may be connected to electrode FP42 without going through an electrode provided on substrate B. Wiring W12 may be connected to electrode FP52 without going through an electrode provided on substrate B. Wiring W13 may be connected to electrode FP62 without going through an electrode provided on substrate B.

[0085] By configuring it as described above, the number of pads mounted on the substrate B can be reduced compared to the case where the two electrodes FP of a single ferrite bead FB are arranged to be in contact with different metal pads. Therefore, the length of the semiconductor device 1A in the Y direction can be shortened.

[0086] Although several embodiments have been described above, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0087] 1,1A… Semiconductor equipment 10a, 10b, 70, 71… Electrode pads 90, 91, 92, 93, 94, 95, 96, 97… pad 20a, 20b…MOSFET 30…Support stand 40…Photodetector 50...adhesive layer 60…Light-emitting diode 80, 81, 82a, 82b, FP11, FP12, FP21, FP22, FP31, FP32, FP41, FP42, FP51, FP52, FP61, FP62...electrode B... Circuit board W1,W2,W3,W4,W5,W6,W7,W8,W9,W10,W11,W12,W13…Wiring FB1, FB2, FB3, FB4, FB5, FB6… Ferrite beads

Claims

1. A first transistor and a second transistor, whose respective source electrodes are electrically connected, Light-emitting element and A light-receiving element having a first cathode electrode and a second cathode electrode, which turns the first transistor and the second transistor on or off depending on the light-emitting state of the light-emitting element, A first filter element electrically connects the first cathode electrode of the light-receiving element and the source electrode of the first transistor, A second filter element electrically connects the second cathode electrode of the light-receiving element and the source electrode of the second transistor, Equipped with, Semiconductor equipment.

2. A substrate having opposing first and second surfaces, A support base provided on the first surface of the substrate and in contact with the lower surface of the light-receiving element, A first pad is provided on the first surface of the substrate and is in contact with the lower surface of the first transistor, A second pad is provided on the first surface of the substrate and is in contact with the lower surface of the second transistor, Furthermore, The first filter element has a first end that contacts the first cathode electrode of the photodetector and a second end that contacts the source electrode of the first transistor. The second filter element has a first end in contact with the second cathode electrode of the photodetector and a second end in contact with the source electrode of the second transistor. The semiconductor device according to claim 1.

3. The first cathode electrode and the second cathode electrode of the light-receiving element are provided on the upper surface of the light-receiving element. The source electrode of the first transistor is provided on the upper surface of the first transistor. The source electrode of the second transistor is provided on the upper surface of the second transistor. The heights of the upper surface of the light-receiving element, the upper surface of the first transistor, and the upper surface of the second transistor from the substrate are approximately equal. The semiconductor device according to claim 2.

4. The support base is an insulator. The semiconductor device according to claim 2.

5. A substrate having a first surface, A support base provided on the first surface of the substrate and in contact with the lower surface of the light-receiving element, A first pad is provided on the first surface of the substrate and is in contact with the lower surface of the first transistor, A second pad is provided on the first surface of the substrate and is in contact with the lower surface of the second transistor, A third pad is provided on the first surface of the substrate between the support base and the first pad, A fourth pad is provided on the first surface of the substrate between the support base and the second pad, Furthermore, The first filter element has a first end that contacts the third pad, The second filter element has a first end that contacts the fourth pad, The semiconductor device according to claim 1.

6. A fifth pad is provided on the first surface of the substrate between the third pad and the first pad, A sixth pad is provided on the first surface of the substrate between the fourth pad and the second pad, Furthermore, The first filter element has a second end that contacts the fifth pad, The second filter element has a second end that contacts the sixth pad, The semiconductor device according to claim 5.

7. A first wiring that electrically connects the first cathode electrode and the third pad of the light-receiving element, A second wiring that electrically connects the second cathode electrode and the fourth pad of the light-receiving element, A third wiring that electrically connects the source electrode of the first transistor and the fifth pad, A fourth wiring that electrically connects the source electrode of the second transistor and the sixth pad, It also has the following features: The semiconductor device according to claim 6.

8. A first wiring that electrically connects the first cathode electrode of the light-receiving element and the first end of the first filter element, A second wiring electrically connects the second cathode electrode of the light-receiving element and the first end of the second filter element, A third wiring that electrically connects the source electrode of the first transistor and the second end of the first filter element, A fourth wiring that electrically connects the source electrode of the second transistor and the second end of the second filter element, It also has the following features: The semiconductor device according to claim 6.

9. A first wiring that electrically connects the first cathode electrode and the third pad of the light-receiving element, A second wiring that electrically connects the second cathode electrode and the fourth pad of the light-receiving element, A third wiring that electrically connects the source electrode of the first transistor and the second end of the first filter element, A fourth wiring that electrically connects the source electrode of the second transistor and the second end of the second filter element, It also has the following features: The semiconductor device according to claim 5.

10. The light-receiving element has a first anode electrode and a second anode electrode, A third filter element electrically connects the first anode electrode of the light-receiving element and the gate electrode of the first transistor, A fourth filter element electrically connects the second anode electrode of the light-receiving element and the gate electrode of the second transistor, It also has the following features: The semiconductor device according to claim 1.

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