Plasma processing equipment

Abstract

This suppresses the decrease in plasma generation efficiency caused by interference between the heater and coil. [Solution] The plasma processing apparatus comprises a stage, a chamber, a dielectric member 13, an induction coil, an electric heater 30, and a power supply unit 41. The electric heater 30 has a first heater 31 that heats a first region 13a of the dielectric member 13, a second heater 34 that heats a second region 13b of the dielectric member 13, and a connecting portion 37 that connects the two. The first resistor 32 of the first heater 31 extends in a first direction D1 along a first trajectory corresponding to the first region 13a from the first end 32a to the second end 32b. The second resistor 35 of the second heater 34 extends in a first direction D1 along a second trajectory corresponding to the second region 13b from the third end 35a to the fourth end 35b. The connecting portion 37 connects the first end 32a and the third end 35a. The power supply unit 41 applies a voltage between the second terminal 32b and the fourth terminal 35b.

Description

Technical Field

[0001] The present disclosure relates to a plasma processing apparatus.

Background Art

[0002] Conventionally, a plasma processing apparatus for plasma-treating an object to be processed such as a substrate has been known (for example, Patent Document 1). Patent Document 1 discloses “a chamber having an opening, a stage disposed in the chamber on which an object to be processed is placed, a dielectric member closing the opening, and a plasma generation unit provided on the side of the dielectric member opposite to the chamber, and generating plasma in the chamber by applying high-frequency power. The plasma generation unit includes a first induction coil including one or a plurality of first conductors connected in parallel to each other, and a second induction coil disposed so as to surround the first induction coil and including a plurality of second conductors connected in parallel to each other. The number of the second conductors included in the second induction coil is larger than the number of the first conductors included in the first induction coil, a plasma processing apparatus”. Patent Document 1 also discloses providing a heater for heating the dielectric member.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] When high-frequency power is applied to a coil, a high-frequency magnetic field is generated, and this magnetic field acts on the source gas in the chamber to generate plasma. The more efficiently the high-frequency magnetic field acts on the source gas, the higher the plasma generation efficiency. However, some of the energy of the magnetic field generated by the coil is consumed by interference with the heater and does not contribute to plasma generation. In other words, the interference between the heater and the coil is a factor that reduces plasma generation efficiency. In this situation, one of the objectives of this disclosure is to suppress the decrease in plasma generation efficiency due to the interference between the heater and the coil. [Means for solving the problem]

[0005] One aspect of the present disclosure relates to a plasma processing apparatus. The plasma processing apparatus comprises a stage on which an object to be processed is placed, a chamber housing the stage and having an opening, a dielectric member that closes the opening, an induction coil provided on the side of the dielectric member opposite to the stage and to which high-frequency power is applied to generate plasma for processing the object to be processed, an electric heater provided between the dielectric member and the induction coil and to heat the dielectric member, and a power supply unit that applies voltage to the electric heater, wherein the dielectric member has a first region and a second region surrounding the first region, and the electric heater has a first heater that heats the first region and a second heater that heats the second region The power supply unit has a second heater and a connecting portion that connects the first heater and the second heater, the first heater has a first resistor including a first end and a second end, the second heater has a second resistor including a third end and a fourth end, the first resistor extends from the first end to the second end in a first direction which is a circumferential direction along a first track corresponding to the first region, the second resistor extends from the third end to the fourth end in the first direction along a second track corresponding to the second region, the connecting portion connects the first end and the third end, and the power supply unit applies a voltage between the second end and the fourth end. [Effects of the Invention]

[0006] According to this disclosure, it is possible to suppress the decrease in plasma generation efficiency due to interference between the heater and the coil. [Brief explanation of the drawing]

[0007] [Figure 1] This is a schematic cross-sectional view showing an example of a plasma processing apparatus related to this disclosure. [Figure 2] This diagram schematically shows the configuration of the electric heater of Embodiment 1, where (a) is a plan view and (b) is a cross-sectional view along line II-II. [Figure 3] This is a schematic plan view showing the configuration of the electric heater of Embodiment 2. [Figure 4] This is a schematic plan view showing the configuration of the electric heater of Embodiment 3. [Modes for carrying out the invention]

[0008] Embodiments of the plasma processing apparatus relating to this disclosure will be described below with examples. However, this disclosure is not limited to the examples described below. In the following description, specific numerical values ​​and materials may be given as examples, but other numerical values ​​and materials may be applied as long as the effects of this disclosure are achieved.

[0009] The plasma processing apparatus according to this disclosure is an apparatus for plasma processing of an object to be processed. The plasma processing apparatus may be, for example, a plasma etching apparatus, a plasma dicer, a plasma ashing apparatus, or a plasma CVD apparatus. The plasma processing apparatus comprises a stage, a chamber, a dielectric member, an induction coil, an electric heater, and a power supply unit.

[0010] The stage is on which the workpiece is placed. The stage may have a horizontal mounting surface on which the workpiece is placed. The stage may have a channel through which a coolant flows to cool the workpiece during plasma processing. The stage may have an electrostatic adsorption mechanism for adsorbing the workpiece. The stage may have a lower electrode to which high-frequency power is applied. The workpiece may be, for example, a semiconductor substrate that is fragmented by plasma etching. The semiconductor substrate comprises a plurality of element regions and dividing regions that define the element regions. The element regions include, for example, a semiconductor layer and a wiring layer. By etching the dividing regions, an element chip having a semiconductor layer and a wiring layer is obtained. The workpiece may be placed on the stage while supported by a carrier. The carrier may be, for example, a resin sheet whose outer periphery is held by a frame.

[0011] The chamber houses the stage. The chamber has an opening. The chamber may be formed in the shape of a hollow cylinder. The chamber may have an opening at the top. The opening may be open upwards. The chamber may be made of metal and may be grounded.

[0012] The dielectric member seals the opening of the chamber. The dielectric member may be formed in the shape of a plate having a horizontally extending region. The dielectric member has a first region and a second region surrounding the first region. The first region may be the inner circumferential region of the dielectric member, and the second region may be the outer circumferential region of the dielectric member. The first region may be circular. The second region may be annular. The dielectric member may be made of ceramics such as quartz, alumina, or aluminum nitride. The dielectric member may be mainly made of quartz.

[0013] The induction coil is located on the side of the dielectric material opposite the stage. The induction coil may also be located above the dielectric material. The induction coil generates plasma for processing the workpiece when high-frequency power is applied to it. The induction coil may generate the plasma inside the chamber. The induction coil may consist of one coil or multiple coils (e.g., two).

[0014] The electric heater is provided between the dielectric member and the induction coil. The electric heater heats the dielectric member. The electric heater has a first heater that heats a first region of the dielectric member, a second heater that heats a second region of the dielectric member, and a connecting part that connects the first heater and the second heater. The connecting part may be made of, for example, a nichrome wire or a copper plate.

[0015] The first heater has a first resistor including a first end and a second end. The second heater has a second resistor including a third end and a fourth end. The first resistor extends from the first end to the second end in a first direction, which is a circumferential direction along a first track corresponding to a first region. The second resistor extends from the third end to the fourth end in a first direction, which is a second track corresponding to a second region. The first direction may be a circumferential direction of the chamber. The first direction may be either clockwise or counterclockwise when the electric heater is viewed from above. The first and second resistors may each be formed in a linear shape. The first and second resistors may each be made of, for example, nichrome wire. The first and second resistors may each be at least partially covered with an insulator (e.g., mica). The first end of the first heater and the third end of the second heater are connected by a coupling. In other words, the first end and the third end are electrically connected via the connecting part.

[0016] The first and second orbits may be any orbits as a whole, circumferentially aligned within the first or second region. The first and second orbits may each be any loop-shaped orbit. At least a portion of the first orbit and / or at least a portion of the second orbit may intersect the first direction. A portion of the first orbit and / or a portion of the second orbit may extend in the opposite direction to the first direction. At least a portion of the first orbit and / or at least a portion of the second orbit may be linear or curved. At least a portion (e.g., the whole) of the first orbit may be contained within the first region when viewed from above. At least a portion (e.g., the whole) of the second orbit may be contained within the second region when viewed from above.

[0017] The power supply unit applies voltage to the electric heater. The power supply unit may apply an AC voltage (for example, an AC voltage of 50Hz or 60Hz) or a DC voltage to the electric heater. The power supply unit applies voltage between the second end of the first heater and the fourth end of the second heater. Thus, a current path is formed in which the power supply unit, the second end of the first heater, the first end of the first heater, the connecting unit, the third end of the second heater, the fourth end of the second heater, and the power supply unit are connected in series in that order.

[0018] According to the above configuration, when the induction coil generates a high-frequency magnetic field, the induced electromotive force generated in the first heater and the induced electromotive force generated in the second heater cancel each other out. For example, assume that the magnetic field generated by the induction coil generates an induced electromotive force that attempts to cause a current to flow in a direction opposite to the first direction in the first resistor of the first heater and the second resistor of the second heater. In this case, the induced electromotive force in the first resistor attempts to cause a current to flow from the second end to the first end, and the induced electromotive force in the second resistor attempts to cause a current to flow from the fourth end to the third end. As described above, since the first end and the third end are connected, the induced electromotive forces of both cancel each other out. This cancellation relationship holds regardless of the direction of the magnetic field generated by the induction coil. Therefore, the degree of magnetic coupling between the induction coil and each heater can be weakened, the interference between them can be suppressed, and thus the decrease in plasma generation efficiency can be suppressed.

[0019] The dielectric member may have an annular groove formed on the surface facing the induction coil between the first region and the second region. The surface facing the induction coil may be the upper surface of the dielectric member.

[0020] At least a part of the induction coil may be disposed inside the annular groove. In this case, by bringing the induction coil closer to the chamber, the magnetic field generated by the induction coil can act more strongly on the source gas in the chamber, and the plasma generation efficiency can be improved. Also, since the induction coil is disposed close to the first and second heaters, the technology of the present disclosure can be utilized more effectively.

[0021] The power supply unit may be connected to the electric heater via a low-pass filter. Since the induced current generated in the electric heater by the magnetic field of the induction coil is a high-frequency current, by providing a low-pass filter between the electric heater and the power supply unit, the flow of the induced current into the power supply unit can be suppressed. The cut-off frequency of the low-pass filter may be, for example, 60 Hz or more and 13.56 MHz or less.

[0022] The connecting portion may extend along the radial direction of the chamber. In this case, the magnetic field generated by the induction coil is less likely to act on the connecting portion, and it is less likely to generate unnecessary induced electromotive force inside the electric heater. This means that the interference between the induction coil and the electric heater is further suppressed, and thus the decrease in plasma generation efficiency can be further suppressed. Note that "the connecting portion extends along the radial direction of the chamber" not only means that the extending direction of the connecting portion and the radial direction coincide with each other, but also means that the angle between them is 10° or less.

[0023] As described above, according to the present disclosure, by devising the connection mode between the first resistor and the second resistor, it is possible to suppress the decrease in plasma generation efficiency due to the interference between the electric heater and the induction coil.

[0024] Hereinafter, an example of the plasma processing apparatus according to the present disclosure will be specifically described with reference to the drawings. The components of the example of the plasma processing apparatus described below can apply the above-described components. The components of the example of the plasma processing apparatus described below can be changed based on the above description. Also, the matters described below may be applied to the above-described embodiments. Among the components of the example of the plasma processing apparatus described below, the components that are not essential for the plasma processing apparatus according to the present disclosure may be omitted. Note that the drawings shown below are schematic and do not accurately reflect the shape and number of actual members.

[0025] <<Embodiment 1>> Embodiment 1 of the present disclosure will be described. The plasma processing apparatus 10 of the present embodiment is an apparatus for plasma processing a workpiece (for example, a semiconductor substrate). The plasma processing apparatus 10 of the present embodiment is a plasma dicing machine, but is not limited thereto. As shown in FIGS. 1 and 2, the plasma processing apparatus 10 includes a chamber 11, a stage 12, a dielectric member 13, a cover 14, a gas introduction path 15, a plasma generation unit 16, a metal cover 25, a first support column 27, a second support column 29, an electric heater 30, a first pressing portion 38, a second pressing portion 39, a high-frequency power source 19, a matcher 21, a distributor 22, and a power supply unit 41.

[0026] Chamber 11 has an opening 11a at its top. Chamber 11 is formed in a hollow cylindrical shape, but is not limited to this. The opening 11a is open upwards. Chamber 11 is located on the outer periphery of stage 12 and has an exhaust port 11b for exhausting the raw material gas used in plasma processing. An exhaust device (not shown) is connected to this exhaust port 11b. Chamber 11 is made of a conductive material (e.g., metal). Chamber 11 is grounded.

[0027] Stage 12 is positioned within Chamber 11 and on which the workpiece is placed. Stage 12 has a horizontal mounting surface 12a on which the workpiece is placed. Stage 12 has a flow channel (not shown) through which a coolant flows to cool the workpiece during plasma processing. Stage 12 has an electrostatic adsorption mechanism (not shown) for adsorbing the workpiece. Stage 12 has a lower electrode (not shown) to which high-frequency power is applied.

[0028] The dielectric member 13 closes the opening 11a of the chamber 11. The dielectric member 13 is formed in a plate shape having a horizontally extending region. The dielectric member 13 has a central region 13a and a peripheral region 13b surrounding the central region 13a. The dielectric member 13 has an annular groove 13c formed on the upper surface between the central region 13a and the peripheral region 13b. The dielectric member 13 is made of quartz, but is not limited to this. The central region 13a is an example of a first region. The peripheral region 13b is an example of a second region.

[0029] The cover 14 is installed within the chamber 11 to cover the dielectric member 13. The cover 14 covers the lower surface of the dielectric member 13. The cover 14 has a plurality of first gas holes 14a formed in positions overlapping with the central region 13a of the dielectric member 13, and a plurality of second gas holes 14b formed in positions overlapping with the peripheral region 13b of the dielectric member 13. The first gas holes 14a and the second gas holes 14b each penetrate the cover 14 in the thickness direction (vertical direction in Figure 1). The first gas holes 14a and the second gas holes 14b each communicate with the space in the chamber 11 where the stage 12 is located. The plurality of first gas holes 14a are spaced apart in the radial and circumferential directions. The plurality of second gas holes 14b are spaced apart in the radial and circumferential directions. The cover 14 is made of aluminum nitride, but is not limited to this.

[0030] The gas introduction passage 15 is formed between the dielectric member 13 and the cover 14, and the raw material gas is introduced through it. The gas introduction passage 15 has a first gas introduction passage 15a that communicates with a first gas hole 14a, and a second gas introduction passage 15b that communicates with a second gas hole 14b. The first gas introduction passage 15a and the second gas introduction passage 15b are each formed by grooves formed in the cover 14. The first gas introduction passage 15a and the second gas introduction passage 15b are separated from each other. The first gas introduction passage 15a and the second gas introduction passage 15b each communicate with the outside of the chamber 11. A gas source (not shown) is connected to the first gas introduction passage 15a and the second gas introduction passage 15b, respectively.

[0031] The plasma generation unit 16 has a first induction coil 17 and a second induction coil 18. The first induction coil 17 and the second induction coil 18 are each located on the side of the dielectric member 13 opposite to the stage 12 (in this example, above the stage 12). The first induction coil 17 includes a plurality (two in this example) of first conductors 17a connected in parallel with each other. The second induction coil 18 is arranged to surround the first induction coil 17. The second induction coil 18 includes a plurality (four in this example) of second conductors 18a connected in parallel with each other. A portion of the second induction coil 18 is located inside the annular groove 13c of the dielectric member 13. The first induction coil 17 and the second induction coil 18 are each examples of induction coils.

[0032] One end (first coil end 17b) of the first conductor 17a constituting the first induction coil 17 is connected to the high-frequency power supply 19 via a distributor 22 and a matching unit 21, respectively. The other end (second coil end 17c) of the first conductor 17a constituting the first induction coil 17 is grounded via a conductive chamber 11. One end (third coil end 18b) of the second conductor 18a constituting the second induction coil 18 is connected to the high-frequency power supply 19 via a distributor 22 and a matching unit 21, respectively. The other end (fourth coil end 18c) of the second conductor 18a constituting the second induction coil 18 is grounded via a conductive chamber 11, respectively. The first induction coil 17 and the second induction coil 18 generate plasma in the chamber 11 for processing the workpiece when high-frequency power is applied from the high-frequency power supply 19.

[0033] The metal cover 25 covers the first induction coil 17 and the second induction coil 18. The metal cover 25 is located above the chamber 11 and is electrically connected to the chamber 11. The metal cover 25 is formed in a cylindrical shape with a closed upper end, but is not limited to this. The metal cover 25 may be made of, for example, aluminum.

[0034] The first support column 27 is installed above the central region 13a of the dielectric member 13. The first support column 27 is made of an insulator. The first support column 27 is supported by a metal cover 25. The first support column 27 supports the first induction coil 17. The first support column 27 supports a conductive member 26 connected to the second coil end 17c of the first induction coil 17 via a fixing member 28. The conductive member 26 is electrically connected to the metal cover 25 above the first induction coil 17. The conductive member 26 does not extend into the region above the second induction coil 18.

[0035] The second support column 29 is installed above the peripheral region 13b of the dielectric member 13. The second support column 29 is made of an insulator. The second support column 29 is supported by a metal cover 25. The second support column 29 supports the second induction coil 18.

[0036] The electric heater 30 is provided between the dielectric member 13 and the first induction coil 17 and the second induction coil 18. The electric heater 30 heats the dielectric member 13 by applying a voltage (for example, an AC voltage) from the power supply unit 41. The electric heater 30 has a first heater 31 that heats the central region 13a of the dielectric member 13, a second heater 34 that heats the peripheral region 13b of the dielectric member 13, and a connecting portion 37 that connects the first heater 31 and the second heater 34.

[0037] The first heater 31 has a first resistor 32 including a first end 32a and a second end 32b. The second heater 34 has a second resistor 35 including a third end 35a and a fourth end 35b. The first resistor 32 extends in an arc shape from the first end 32a to the second end 32b along a first trajectory corresponding to the central region 13a in a first direction D1 (clockwise in this example, in Figure 2). The second resistor 35 extends in an arc shape from the third end 35a to the fourth end 35b along a second trajectory corresponding to the peripheral region 13b in a first direction D1. The first and second trajectories in this embodiment are loop-shaped, each composed of an arc. The first resistor 32 and the second resistor 35 are each formed in a linear shape. The first resistor 32 and the second resistor 35 are each composed of, for example, nichrome wire. The first resistor 32 and the second resistor 35 are at least partially covered by the first insulator 33 and the second insulator 36. The first end 32a of the first heater 31 and the third end 35a of the second heater 34 are connected by a coupling 37. In other words, the first end 32a and the third end 35a are electrically conductive through the coupling 37. The coupling 37 extends along the radial direction of the chamber 11.

[0038] The first pressing portion 38 and the second pressing portion 39 press the first heater 31 and the second heater 34 against the dielectric member 13. The first pressing portion 38 is provided between the first support column 27 and the first heater 31. The first pressing portion 38 has a first spring 38a for pressing the first heater 31 against the dielectric member 13. The second pressing portion 39 is provided between the metal cover 25 and the second heater 34. The second pressing portion 39 has a second spring 39a for pressing the second heater 34 against the dielectric member 13.

[0039] The high-frequency power supply 19 supplies high-frequency power (for example, AC power of 3 MHz or higher and 30 MHz or lower) to the plasma generation unit 16. The high-frequency power supply 19 is connected to the first coil terminal 17b of the first induction coil 17 and the third coil terminal 18b of the second induction coil 18 via a matching unit 21 and a distributor 22.

[0040] The matching circuit 21 is connected to the high-frequency power supply 19. The matching circuit 21 is configured to match the impedance of the high-frequency power supply 19 (input impedance) with the impedance of the stage downstream of the matching circuit 21 (load impedance).

[0041] The distributor 22 is connected between the matching unit 21 and the plasma generation unit 16. The distributor 22 has a first distribution circuit 23 that distributes a portion of the high-frequency power output by the high-frequency power supply 19 to the first induction coil 17, and a second distribution circuit 24 that distributes a portion of the said high-frequency power to the second induction coil 18. The first distribution circuit 23 and the second distribution circuit 24 are connected in parallel to each other.

[0042] The power supply unit 41 applies a voltage (for example, an AC voltage of 50Hz or 60Hz) to the electric heater 30. The power supply unit 41 is connected to the electric heater 30 via a low-pass filter 42. The power supply unit 41 is connected to the second terminal 32b of the first heater 31 and the fourth terminal 35b of the second heater 34, and applies a voltage between the second terminal 32b and the fourth terminal 35b.

[0043] Embodiment 2 Embodiment 2 will be described in this disclosure. The plasma processing apparatus 10 of this embodiment differs from Embodiment 1 in the configuration of the electric heater 30. Specifically, in the electric heater 30 of this embodiment, as shown in Figure 3, the first heater 31 (or first orbital) extends as a whole in the first direction D1 from the first end 32a to the second end 32b, but locally has a portion that extends along the radial direction. Similarly, the second heater 34 (or second orbital) extends as a whole in the first direction D1 from the third end 35a to the fourth end 35b, but locally has a portion that extends along the radial direction. The rest of the configuration is the same as in Embodiment 1.

[0044] Embodiment 3 Embodiment 3 of this disclosure will now be described. The plasma processing apparatus 10 of this embodiment differs from Embodiment 1 in the configuration of the electric heater 30. Specifically, in the electric heater 30 of this embodiment, as shown in Figure 4, the first heater 31 (or first orbital) extends as a whole in the first direction D1 from the first end 32a to the second end 32b, but locally has portions that extend radially or in the direction opposite to the first direction D1. Similarly, the second heater 34 (or second orbital) extends as a whole in the first direction D1 from the third end 35a to the fourth end 35b, but locally has portions that extend radially. The other configurations are the same as in Embodiment 1. Note that the second heater 34 shown in Figure 4 may also have portions that extend in the direction opposite to the first direction D1, similar to the first heater 31.

[0045] [Note] The above description of embodiments discloses the following technologies. (Technology 1) A stage on which the object to be processed is placed, A chamber housing the aforementioned stage and having an opening, A dielectric member that closes the opening, An induction coil is provided on the side of the dielectric member opposite to the stage, and generates plasma for processing the workpiece when high-frequency power is applied to it. A heating element is provided between the dielectric member and the induction coil to heat the dielectric member, A power supply unit that applies voltage to the aforementioned electric heater, Equipped with, The dielectric member has a first region and a second region surrounding the first region. The aforementioned electric heater is, A first heater for heating the first region, A second heater for heating the second region, A connecting portion that connects the first heater and the second heater, It has, The first heater has a first resistor including a first end and a second end, The second heater has a second resistor including a third end and a fourth end, The first resistor extends from the first end to the second end in a first direction which is a circumferential direction along the first track corresponding to the first region, The second resistor extends in the first direction along the second orbital corresponding to the second region from the third end to the fourth end, The aforementioned connecting portion connects the first end and the third end, The power supply unit is a plasma processing apparatus that applies a voltage between the second terminal and the fourth terminal. (Technology 2) The plasma processing apparatus according to Art 1, wherein the dielectric member has an annular groove formed on the surface between the first region and the second region that faces the induction coil. (Technology 3) The plasma processing apparatus according to Art 2, wherein at least a portion of the induction coil is arranged inside the annular groove. (Technology 4) The plasma processing apparatus according to any one of technologies 1 to 3, wherein the power supply unit is connected to the electric heater via a low-pass filter. (Technology 5) The plasma processing apparatus according to any one of the technologies 1 to 4, wherein the connecting portion extends along the radial direction of the chamber. [Industrial applicability]

[0046] This disclosure can be used in plasma processing equipment. [Explanation of symbols]

[0047] 10: Plasma processing equipment 11: Chamber 11a:Aperture 11b: Exhaust port 12: Stage 12a: Mounting surface 13: Dielectric material 13a: Central area (first area) 13b: Peripheral region (second region) 13c: Annular groove 14: Cover 14a: First gas hole 14b: Second gas hole 15: Gas introduction route 15a: First gas introduction channel 15b: Second gas introduction channel 16: Plasma generation section 17: First induction coil (induction coil) 17a: First conductor 17b: First coil terminal 17c: Second coil end 18: Second induction coil (induction coil) 18a: Second conductor 18b: Third coil terminal 18c: Fourth coil end 19:High frequency power supply 21: Matching box 22:Distributor 23: 1st distribution circuit 24:Second distribution circuit 25: Metal cover 26: Conductive material 27:1st pillar 28: Fixing member 29:Second pillar 30: Electric heater 31: First heater 32: First resistor 32a: 1st end 32b: 2nd end 33: First insulator 34: Second heater 35: Second resistor 35a: 3rd end 35b: 4th end 36: Second insulator 37:Connection part 38: First pressing section 38a: First spring 39: Second pressing section 39a: Second spring 41: Power supply section 42: Low-pass filter D1: 1st direction

Claims

1. A stage on which the object to be processed is placed, A chamber housing the aforementioned stage and having an opening, A dielectric member that closes the opening, An induction coil is provided on the side of the dielectric member opposite to the stage, and generates plasma for processing the workpiece when high-frequency power is applied to it. A heating element is provided between the dielectric member and the induction coil to heat the dielectric member, A power supply unit that applies voltage to the aforementioned electric heater, Equipped with, The dielectric member has a first region and a second region surrounding the first region. The aforementioned electric heater is, A first heater for heating the first region, A second heater for heating the second region, A connecting portion that connects the first heater and the second heater, It has, The first heater has a first resistor including a first end and a second end, The second heater has a second resistor including a third end and a fourth end, The first resistor extends from the first end to the second end in a first direction which is a circumferential direction along the first track corresponding to the first region, The second resistor extends in the first direction along the second trajectory corresponding to the second region from the third end to the fourth end, The aforementioned connecting portion connects the first end and the third end, The power supply unit is a plasma processing apparatus that applies a voltage between the second terminal and the fourth terminal.

2. The plasma processing apparatus according to claim 1, wherein the dielectric member has an annular groove formed on the surface between the first region and the second region that faces the induction coil.

3. The plasma processing apparatus according to claim 2, wherein at least a portion of the induction coil is arranged inside the annular groove.

4. The plasma processing apparatus according to any one of claims 1 to 3, wherein the power supply unit is connected to the electric heater via a low-pass filter.

5. The plasma processing apparatus according to any one of claims 1 to 3, wherein the connecting portion extends along the radial direction of the chamber.

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