Joining device and joining method

Abstract

To improve the bonding accuracy of the circuit board. [Solution] A bonding device according to one aspect of the present disclosure comprises a first holding part, a second holding part, and a striker. The first holding part holds the first substrate from above. The first holding part is flexible, has a larger diameter than the first substrate, and includes a holding member that holds the first substrate by suction, and a lifting mechanism that raises and lowers the holding member. The lifting mechanism is positioned radially outward from the first substrate. The second holding part is positioned below the first holding part and holds the second substrate to be bonded to the first substrate from below. The striker presses the center of the first substrate held by the first holding part from above.

Description

Technical Field

[0001] The present disclosure relates to a bonding device and a bonding method.

Background Art

[0002] Patent Document 1 discloses a bonding device for bonding substrates to each other.

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique for improving the bonding accuracy of substrates.

Means for Solving the Problems

[0005] A bonding device according to an aspect of the present disclosure includes a first holding part, a second holding part, and a striker. The first holding part holds a first substrate from above. The first holding part has a flexible holding member that has a larger diameter than the first substrate and adsorbs and holds the first substrate, and a lifting mechanism that raises and lowers the holding member. The lifting mechanism is disposed radially outside the first substrate. The second holding part is disposed below the first holding part and holds a second substrate to be bonded to the first substrate from below. The striker presses the central portion of the first substrate held by the first holding part from above.

Effects of the Invention

[0006] According to the present disclosure, the bonding accuracy of substrates can be improved.

Brief Description of the Drawings

[0007] [Figure 1]Figure 1 is a schematic diagram showing the configuration of the joining system according to the first embodiment. [Figure 2] Figure 2 is a schematic diagram showing the state of the first substrate and the second substrate before bonding according to the first embodiment. [Figure 3] Figure 3 is a schematic diagram illustrating an example of how the bonding area expands. [Figure 4] Figure 4 is a schematic diagram showing the configuration of the joining device according to the first embodiment. [Figure 5] Figure 5 is a plan view of the first holding part according to the first embodiment, viewed from above. [Figure 6] Figure 6 is a flowchart showing the procedure of the process performed by the joining system according to the first embodiment. [Figure 7] Figure 7 is a flowchart showing the procedure of the joining process performed by the joining system according to the first embodiment. [Figure 8] Figure 8 is a diagram illustrating the specific operations in the joining process performed by the joining system according to the first embodiment. [Figure 9] Figure 9 is a schematic diagram showing the configuration of the joining device according to the second embodiment. [Figure 10] Figure 10 is a plan view of the first retaining part according to the second embodiment, viewed from above. [Figure 11] Figure 11 is a diagram illustrating the specific operations in the joining process performed by the joining system according to the second embodiment. [Figure 12] Figure 12 is a schematic diagram showing a modified configuration of the joining device according to the second embodiment. [Figure 13] Figure 13 is a plan view of the first retaining part in Figure 12, seen from above. [Figure 14] Figure 14 is a schematic diagram showing the configuration of the joining device according to the third embodiment. [Figure 15] Figure 15 is a flowchart showing the procedure of the joining process performed by the joining system according to the third embodiment. [Modes for carrying out the invention]

[0008] Hereinafter, embodiments for implementing the bonding device according to the present disclosure (hereinafter referred to as "embodiments") will be described in detail with reference to the drawings. Note that the bonding device and bonding method according to the present disclosure are not limited by this embodiment. Also, the respective embodiments can be appropriately combined within a range that does not conflict with the processing contents. In addition, in the following respective embodiments, the same parts are denoted by the same reference numerals, and redundant explanations are omitted.

[0009] In addition, in the embodiments shown below, expressions such as "constant", "orthogonal", "vertical", or "parallel" may be used, but these expressions do not necessarily require strict "constant", "orthogonal", "vertical", or "parallel". That is, each of the above expressions is assumed to allow deviations such as manufacturing accuracy and installation accuracy.

[0010] In addition, in each of the drawings referred to below, in order to make the explanation easier to understand, an orthogonal coordinate system may be shown that defines the X-axis direction, Y-axis direction, and Z-axis direction that are orthogonal to each other, and the positive Z-axis direction is the vertically upward direction. Also, the rotational direction about the vertical axis may be referred to as the θ direction.

[0011] <First Embodiment> <Configuration of Bonding System> First, the configuration of the bonding system according to the first embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic diagram showing the configuration of the bonding system according to the first embodiment. FIG. 2 is a schematic diagram showing the state before bonding of the first substrate and the second substrate according to the first embodiment.

[0012] The bonding system 1 shown in FIG. 1 forms a polymerized substrate T by bonding the first substrate W1 and the second substrate W2 (see FIG. 2).

[0013] The first substrate W1 and the second substrate W2 are, for example, single crystal silicon wafers, and a plurality of electronic circuits are formed on the plate surfaces. The first substrate W1 and the second substrate W2 have substantially the same diameter. Note that one of the first substrate W1 and the second substrate W2 may be, for example, a substrate on which no electronic circuit is formed.

[0014] Hereinafter, as shown in FIG. 2, among the plate surfaces of the first substrate W1, the plate surface on the side joined to the second substrate W2 is referred to as the "joining surface W1j", and the plate surface on the opposite side of the joining surface W1j is referred to as the "non-joining surface W1n". Also, among the plate surfaces of the second substrate W2, the plate surface on the side joined to the first substrate W1 is referred to as the "joining surface W2j", and the plate surface on the opposite side of the joining surface W2j is referred to as the "non-joining surface W2n".

[0015] As shown in FIG. 1, the joining system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 is arranged on the negative X-axis side of the processing station 3 and is integrally connected to the processing station 3.

[0016] The loading / unloading station 2 includes a mounting table 10 and a transfer area 20. The mounting table 10 includes a plurality of mounting plates 11. On each mounting plate 11, cassettes C1 to C4 for horizontally accommodating a plurality of (for example, 25) substrates are respectively mounted. Cassette C1 can accommodate a plurality of first substrates W1, cassette C2 can accommodate a plurality of second substrates W2, cassette C3 can accommodate a plurality of laminated substrates T. Cassette C4 is, for example, a cassette for collecting substrates with defects. Note that the number of cassettes C1 to C4 mounted on the mounting plate 11 is not limited to that shown in the figure.

[0017] The transfer area 20 is arranged adjacent to the positive X-axis side of the mounting table 10. In the transfer area 20, a transfer path 21 extending in the Y-axis direction and a transfer device 22 movable along the transfer path 21 are provided. The transfer device 22 is movable not only in the Y-axis direction but also in the X-axis direction and is rotatable around the Z-axis. The transfer device 22 transfers the first substrate W1, the second substrate W2, and the laminated substrate T between the cassettes C1 to C4 mounted on the mounting plate 11 and the third processing block G3 of the processing station 3 described later.

[0018] Processing station 3 is provided with, for example, three processing blocks G1, G2, and G3. The first processing block G1 is located on the rear side of processing station 3 (the positive Y-axis side in Figure 1). The second processing block G2 is located on the front side of processing station 3 (the negative Y-axis side in Figure 1), and the third processing block G3 is located on the loading / unloading station 2 side of processing station 3 (the negative X-axis side in Figure 1).

[0019] The first processing block G1 is equipped with a surface modification device 30 that modifies the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2. The surface modification device 30 modifies the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2 by breaking the SiO2 bonds in the bonding surfaces W1j and W2j to create single-bonded SiO, thereby making them more easily hydrophilized afterward.

[0020] Specifically, in the surface modification apparatus 30, for example, under a reduced pressure atmosphere, oxygen gas or nitrogen gas, which is the processing gas, is excited, plasma-generated, and ionized. Then, these oxygen ions or nitrogen ions are irradiated onto the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2, thereby plasma-treated and modified the bonding surfaces W1j and W2j. Note that the processing gas is not limited to oxygen gas, but may also be nitrogen gas, argon gas, helium gas, etc.

[0021] Furthermore, a surface hydrophilization device 40 is located in the first processing block G1. The surface hydrophilization device 40 hydrophilizes the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2 with, for example, pure water, and also cleans the bonding surfaces W1j and W2j. Specifically, the surface hydrophilization device 40 supplies pure water onto the first substrate W1 or the second substrate W2 while rotating the substrate, for example, the first substrate W1 or the second substrate W2 held in a spin chuck. As a result, the pure water supplied onto the first substrate W1 or the second substrate W2 diffuses over the bonding surfaces W1j and W2j of the first substrate W1 or the second substrate W2, and the bonding surfaces W1j and W2j are hydrophilized.

[0022] Here, an example is shown where the surface modification device 30 and the surface hydrophilization device 40 are arranged side by side, but the surface hydrophilization device 40 may be stacked above or below the surface modification device 30.

[0023] A bonding device 41 is located in the second processing block G2. The bonding device 41 bonds the hydrophilized first substrate W1 and the second substrate W2 by intermolecular forces. The specific configuration of the bonding device 41 will be described later.

[0024] A transport area 60 is formed in the region enclosed by the first processing block G1, the second processing block G2, and the third processing block G3. A transport device 61 is arranged in the transport area 60. The transport device 61 has a transport arm that is movable, for example, in the vertical direction, horizontal direction, and around the vertical axis. The transport device 61 moves within the transport area 60 and transports the first substrate W1, the second substrate W2, and the polymer substrate T to predetermined devices in the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the transport area 60.

[0025] The bonding system 1 also includes a control unit 70. The control unit 70 controls the operation of the bonding system 1. This control unit 70 is, for example, a computer and includes a control unit and a memory unit (not shown). The control unit includes a microcomputer having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, and various circuits. The CPU of this microcomputer realizes the control described later by reading and executing a program stored in the ROM. The memory unit is realized by, for example, semiconductor memory elements such as RAM and flash memory, or storage devices such as hard disks and optical discs.

[0026] Such a program may have been recorded on a computer-readable recording medium and installed from that recording medium into the memory unit of the control unit 70. Examples of computer-readable recording media include hard disks (HDs), flexible disks (FDs), compact discs (CDs), magnetic optical discs (MOs), and memory cards.

[0027] <Overview of joining process> Next, an overview of the joining process performed by the joining device 41 will be described with reference to Figure 3. Figure 3 is a schematic diagram showing an example of how the joining area expands. Note that while a negative Miller exponent is usually indicated by placing a "-" (bar) above the number, in this specification it is indicated by placing a negative sign before the number.

[0028] As shown in Figure 3, the first substrate W1 and the second substrate W2 are single-crystal silicon wafers with a crystal orientation

[0100] perpendicular to the surface. The notches N of the first substrate W1 and the second substrate W2 are formed on the outer edges of the first substrate W1 and the second substrate W2 in the

[0011] crystal orientation. The diameters of the first substrate W1 and the second substrate W2 are, for example, 300 mm.

[0029] The bonding apparatus 41 positions the first substrate W1 and the second substrate W2 facing each other with a gap between them, and then presses down the center of the first substrate W1 to bring it into contact with the center of the second substrate W2. As a result, as shown in Figure 3, the centers of the first substrate W1 and the second substrate W2 are joined by intermolecular forces, and a bonding region A is formed in the centers of both substrates W1 and W2. Subsequently, a bonding wave is generated as the bonding region A expands from the centers outward from the edges of both substrates, and the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2 are joined together over their entire surfaces.

[0030] In conventional bonding processes, the first substrate W1 is fixed by a highly rigid holding portion. Specifically, the first substrate W1 is held by suction at its outer periphery by the holding portion. In this case, tensile stress due to the bonding force in bonding region A and tensile stress due to the suction holding force at the outer periphery are generated inside the first substrate W1 on the outer periphery side of bonding region A. These tensile stresses due to the bonding force and the tensile stress due to the suction holding force increase as bonding region A expands. The expansion of bonding region A by the bonding wave stops when the tensile stress due to the bonding force and the tensile stress due to the suction holding force balance each other. Hereinafter, the outer periphery position of bonding region A on the first substrate W1 when the expansion of bonding region A stops will be called the inflation position.

[0031] In conventional bonding processes, for example, when the expansion of the bonding region A by the bonding wave stops, the suction holding of the first substrate W1 is stopped, and the first substrate W1 is released from the holding part. As a result, the first substrate W1 is released from the tensile stress due to the bonding force and the tensile stress due to the suction holding force, and the expansion of the bonding region A by the bonding wave proceeds again. As a result, the first substrate W1 and the second substrate W2 are bonded on the outer periphery side of the inflation position.

[0032] However, when the outer periphery of the first substrate W1 is fixed by a highly rigid holding portion, the first substrate W1 tends to stretch radially near the inflation position due to tensile stress caused by the bonding force and tensile stress caused by the suction holding force. Furthermore, as will be described later, the first substrate W1 (and the second substrate W2) have anisotropy in crystal orientation along the in-plane direction, so the amount of substrate elongation differs depending on the direction of the crystal orientation. For this reason, in conventional techniques where the first substrate W1 cannot be held on the outer periphery side of the inflation position, in-plane anisotropy in the expansion rate of the bonding region A tends to occur on the outer periphery side of the inflation position, which tends to reduce the bonding accuracy of the polymerized substrate T.

[0033] The first substrate W1 and the second substrate W2 have different physical properties, such as Young's modulus and Poisson's ratio, in the 90-degree direction and the 45-degree direction. The 90-degree direction is a 90-degree periodic direction based on the direction from the center of the first substrate W1 toward the [0-11] crystal direction parallel to the surface of the first substrate W1 (the directions of 0, 90, 180, and 270 degrees shown in Figure 3). The 45-degree direction is a 90-degree periodic direction based on the direction from the center of the first substrate W1 toward the

[0010] crystal direction parallel to the surface of the first substrate W1 (the directions of 45, 135, 225, and 315 degrees shown in Figure 3).

[0034] The Young's modulus, Poisson's ratio, and shear modulus of a single-crystal silicon wafer change with a 90-degree period. Specifically, the Young's modulus of a single-crystal silicon wafer is highest in the 90-degree direction and lowest in the 45-degree direction. Similarly, the Poisson's ratio and shear modulus are highest in the 45-degree direction and lowest in the 90-degree direction. As a result, there is a difference in the amount of elongation of the first substrate W1 between the 90-degree and 45-degree directions. Specifically, the first substrate W1 elongates more in the 90-degree direction than in the 45-degree direction, and the difference in elongation between the 90-degree and 45-degree directions of the first substrate W1 increases towards the outer edge of the first substrate W1.

[0035] Furthermore, during the bonding process described above, the second substrate W2 is held by the holding portion over its entire surface, and the difference in elongation between the 90-degree direction and the 45-degree direction is smaller than that of the first substrate W1. Specifically, the holding portion that holds the second substrate W2 is provided with a plurality of pins that contact the lower surface of the second substrate W2, and ribs that contact the outer circumference of the lower surface of the second substrate W2 outside of the plurality of pins. The ribs have a larger contact area with the second substrate W2 compared to the plurality of pins. Therefore, the elongation of the second substrate W2 in the 90-degree and 45-degree directions is suppressed by the frictional force between the second substrate W2 and the ribs. As a result, a difference in the degree of strain occurs between the first substrate W1 and the second substrate W2. Specifically, the degree of strain is greater in the first substrate W1 than in the second substrate W2, and the difference in the degree of strain between the first substrate W1 and the second substrate W2 increases toward the outer edges of both the first substrate W1 and the second substrate W2. The difference in the degree of strain between the first substrate W1 and the second substrate W2 also contributes to the difference in elongation between the 90-degree and 45-degree directions in the first substrate W1, thus reducing the bonding accuracy of the polymer substrate T.

[0036] Therefore, the bonding apparatus 41 according to the first embodiment is provided with a holding member that is flexible, has a larger diameter than the first substrate W1, and holds the first substrate W1 by adsorption, and a lifting mechanism that raises and lowers the holding member in the vertical direction. With this configuration, the bonding process can be performed while lowering the first substrate W1 vertically downward in accordance with the expansion of the bonding region A by the bonding wave. This makes it difficult to create inflation positions in the first substrate W1 during the bonding process. Furthermore, because inflation positions are less likely to occur, the entire surface of the substrate can be bonded while the first substrate W1 is held by the holding member. As a result, even if there is anisotropy in the crystal orientation, the entire surface of the substrate, including the outer periphery, can be bonded with high precision.

[0037] <Configuration of the joining device> Next, the configuration of the joining device 41 will be described with reference to Figures 4 and 5. Figure 4 is a schematic diagram showing the configuration of the joining device 41 according to the first embodiment. Figure 5 is a plan view of the first holding part according to the first embodiment, viewed from above.

[0038] As shown in Figure 4, the joining device 41 comprises a first holding part 140, a second holding part 141, and a striker 190.

[0039] The first holding portion 140 is a member that holds the first substrate W1 from above. The first holding portion 140 has a holding member 150, a plurality of lifting mechanisms 160, and a main body portion 170. The main body portion 170 has a through hole 176 that penetrates the main body portion 170 vertically. The position of the through hole 176 corresponds to the center of the first substrate W1 held by the first holding portion 140. The pressing pin 191 of the striker 190, which will be described later, is inserted through the through hole 176.

[0040] Furthermore, the main body portion 170 has a plurality of through holes 177 that penetrate vertically through it. The positions of the through holes 177 correspond to the outer circumference of the holding member 150, which will be described later. The support portion 161 of the lifting mechanism 160, which will be described later, is inserted through the through holes 177.

[0041] The retaining member 150 is located below the main body 170. The retaining member 150 is flexible, has a larger diameter than the first substrate W1, and holds the first substrate W1 from above by suction. The retaining member 150 may be, for example, a thin, circular plate-like member with approximately the same diameter as the main body 170 in plan view. The retaining member 150 may be made of, for example, silicon.

[0042] Multiple lifting mechanisms 160 are arranged circumferentially on the upper surface of the main body 170, radially outward from the first substrate W1 (see Figure 5). In the first embodiment, the first holding section 140 has four first lifting mechanisms 160A and four second lifting mechanisms 160B. That is, in the first embodiment, the first holding section 140 has eight lifting mechanisms 160. In the following description, the first lifting mechanisms 160A and the second lifting mechanisms 160B may be referred to simply as the lifting mechanism 160 without distinction.

[0043] The first lifting mechanism 160A is arranged at 90-degree intervals with respect to the direction of 0 degrees, when the direction toward the [0-11] crystal direction of the first substrate W1 is defined as 0 degrees. The second lifting mechanism 160B is arranged at 90-degree intervals with respect to the direction of 45 degrees.

[0044] The lifting mechanism 160 includes a support portion 161 and a drive mechanism (not shown). The support portion 161 is, for example, a cylindrical member extending along the vertical direction. The support portion 161 is inserted through a through hole 177 in the main body portion 170 and supports the holding member 150 on its outer circumference. The drive mechanism, for example, incorporates a motor, which moves the support portion 161 along the vertical direction. This allows the holding member 150, which holds the first substrate W1 by suction, to move up and down in the vertical direction.

[0045] The first substrate W1 is held by adsorption on the lower surface of the holding member 150. The holding member 150 holds the first substrate W1 by electrostatic adsorption, for example. In this case, the holding member 150 may be connected to a power supply, etc., which is not shown. When a voltage is applied to the holding member 150, which is a silicon substrate, dielectric polarization occurs inside it. When the first substrate W1 comes into contact with the holding member 150, dielectric polarization is also induced inside the first substrate W1. Therefore, the holding member 150 can hold the first substrate W1 by Coulomb force. Since the holding member 150 is ferroelectric, once a voltage is applied to cause polarization, the polarized state is maintained for a certain period of time. Therefore, the electrostatic adsorption force can be maintained without continuously applying a voltage.

[0046] Alternatively, the holding member 150 may hold the first substrate W1 by adsorption, for example, by vacuum suction. In this case, the holding member 150 may have a plurality of through holes as suction ports. Such suction ports may be connected, for example, to a vacuum pump or the like.

[0047] The striker 190 is positioned on the upper surface of the main body 170 and comprises a pressing pin 191, an actuator 192, and a linear motion mechanism 193. The pressing pin 191 is a cylindrical member extending in the vertical direction and is supported by the actuator 192.

[0048] The actuator unit 192 generates a constant pressure in a specific direction (here, vertically downward) using air supplied, for example, from an electro-pneumatic regulator (not shown). The actuator unit 192 can control the pressing load applied to the center of the first substrate W1 by contacting it with the air supplied from the electro-pneumatic regulator via the holding member 150. Furthermore, the tip of the actuator unit 192 is able to move vertically up and down by air from the electro-pneumatic regulator through the through hole 176.

[0049] The actuator unit 192 is supported by the linear motion mechanism 193. The linear motion mechanism 193 moves the actuator unit 192 along the vertical direction, for example, by a drive unit that incorporates a motor.

[0050] The striker 190 controls the movement of the actuator 192 by the linear motion mechanism 193, and the actuator 192 controls the pressing load on the first substrate W1 by the pressing pin 191. As a result, the striker 190 presses the center of the first substrate W1, which is held by suction to the holding member 150 via the holding member 150, and brings it into contact with the second substrate W2.

[0051] The second holding portion is a member that holds the second substrate from below. The second holding portion 141 has a main body portion 200 having a diameter approximately the same as or larger than that of the second substrate W2. Here, the second holding portion 141 having a diameter larger than that of the second substrate W2 is shown. The upper surface of the main body portion 200 is a facing surface that faces the lower surface (non-bonding surface W2n) of the second substrate W2.

[0052] The upper surface of the main body 200 is provided with a plurality of pins 201 that contact the lower surface (non-bonding surface W2n) of the second substrate W2. The plurality of pins 201 have, for example, a diameter of 0.1 mm to 1 mm and a height of several tens of micrometers to several hundred micrometers. The plurality of pins 201 are evenly arranged at intervals of, for example, 1 to 10 mm.

[0053] Furthermore, outer peripheral ribs 202 are provided around the outside of the multiple pins 201 on the upper surface of the main body 200. The outer peripheral ribs 202 are annular members.

[0054] Furthermore, a central rib 203 is provided around the upper surface of the main body 200, positioned inward from the outer rib 202. The central rib 203 is an annular member arranged concentrically with the outer rib 202.

[0055] In this embodiment, the second retaining portion 141 has only two ribs, an outer peripheral rib 202 and a central rib 203. However, it is not limited to this configuration, and the second retaining portion 141 may have three or more ribs. That is, the second retaining portion 141 may have one or more ribs in addition to the outer peripheral rib 202 and the central rib 203. Such ribs may be annular members arranged concentrically with the outer peripheral rib 202 and the central rib 203.

[0056] On the upper surface of the main body 200, the area inside the outer peripheral rib 202 is divided by the outer peripheral rib 202 and the central rib 203. That is, the area inside the outer peripheral rib 202 is divided into the area inside the central rib 203 (hereinafter referred to as the "first suction area") R1 and the area between the central rib 203 and the outer peripheral rib 202 (hereinafter referred to as the "second suction area") R2.

[0057] The main body 200 has a suction port 204. The suction port 204 is provided in the first suction region R1. The suction port 204 is connected to a suction device 205 via a suction tube 204a. The suction device 205 is, for example, a vacuum pump.

[0058] The second holding part 141 evacuates the suction regions R1 and R2 from the suction port 204, thereby reducing the pressure in the suction regions R1 and R2. At this time, since the atmosphere outside the suction regions R1 and R2 is atmospheric pressure, the second substrate W2 is pushed towards the suction regions R1 and R2 by the atmospheric pressure by the amount of the pressure reduction. As a result, the second substrate W2 is held by suction to the second holding part 141. The height of the central rib 203 is set lower than the height of the outer peripheral rib 202. This creates a gap between the central rib 203 and the second substrate W2, allowing the suction regions R1 and R2 to be reduced by evacuating from the suction port 204.

[0059] In this embodiment, an example is shown in which suction regions R1 and R2 are vacuumed using a single suction port 204. However, suction regions R1 and R2 may be vacuumed individually. That is, the second holding unit 141 may have a configuration having multiple suction ports corresponding to each suction region.

[0060] Although not shown in the diagram here, the bonding apparatus 41 includes a transition, an inversion mechanism, and a position adjustment mechanism prior to the first holding section 140 and the second holding section 141 shown in Figure 4. The transition temporarily places the first substrate W1, the second substrate W2, and the bonding substrate T on it. The position adjustment mechanism adjusts the horizontal orientation of the first substrate W1 and the second substrate W2. The inversion mechanism inverts the front and back sides of the first substrate W1.

[0061] <Specific operation of the joining system> Next, the specific operation of the joining system 1 will be described with reference to Figure 6. Figure 6 is a flowchart showing the procedure of processing performed by the joining system according to the first embodiment. The various processes shown in Figure 6 are executed based on control by the control unit 70.

[0062] First, cassette C1 containing multiple first circuit boards W1, cassette C2 containing multiple second circuit boards W2, and an empty cassette C3 are placed on a designated mounting plate 11 at the loading / unloading station 2. Then, the transport device 22 removes the first circuit boards W1 from cassette C1 and transports them to the transition device located in the third processing block G3.

[0063] Next, the first substrate W1 is transported by the transport device 61 to the surface modification device 30 of the first processing block G1. In the surface modification device 30, under a predetermined reduced pressure atmosphere, oxygen gas, which is the processing gas, is excited, plasma-generated, and ionized. These oxygen ions are irradiated onto the bonding surface of the first substrate W1, and the bonding surface is plasma-treated. As a result, the bonding surface of the first substrate W1 is modified (step S101). Note that the processing gas is not limited to oxygen gas, but may also be nitrogen gas, argon gas, helium gas, etc.

[0064] Next, the first substrate W1 is transported by the transport device 61 to the surface hydrophilization device 40 of the second processing block G1. In the surface hydrophilization device 40, pure water is supplied onto the first substrate W1 while it is rotated, which is held in a spin chuck. This hydrophilizes the bonding surface of the first substrate W1. In addition, the bonding surface of the first substrate W1 is cleaned by the pure water (step S102).

[0065] Next, the first substrate W1 is transported by the transport device 61 to the bonding device 41 of the second processing block G2. The first substrate W1, once loaded into the bonding device 41, is transported via a transition to the position adjustment mechanism, where its horizontal orientation is adjusted (step S103).

[0066] Subsequently, the first substrate W1 is transferred from the position adjustment mechanism to the inversion mechanism, and the inversion mechanism inverts the front and back surfaces of the first substrate W1 (step S104). Specifically, the bonding surface W1j of the first substrate W1 is oriented downwards.

[0067] Subsequently, the first substrate W1 is transferred from the reversal mechanism to the first holding part 140, and the first substrate W1 is held by the first holding part 140 through suction (step S105). Specifically, as described above, the holding member 150 holds the first substrate W1 by electrostatic attraction or the like.

[0068] The processing of the second substrate W2 is performed in overlap with the processing of the first substrate W1 in steps S101 to S105. First, the transport device 22 removes the second substrate W2 from the cassette C2 and transports it to the transition device located in the third processing block G3.

[0069] Next, the second substrate W2 is transported by the transport device 61 to the surface modification device 30, where the bonding surface W2j of the second substrate W2 is modified (step S106). After that, the second substrate W2 is transported by the transport device 61 to the surface hydrophilization device 40, where the bonding surface W2j of the second substrate W2 is hydrophilized and the bonding surface is cleaned (step S107).

[0070] Subsequently, the second substrate W2 is transported to the bonding device 41 by the transport device 61. The second substrate W2, once loaded into the bonding device 41, is transported to the position adjustment mechanism via a transition. The position adjustment mechanism then adjusts the horizontal orientation of the second substrate W2 (step S108).

[0071] Subsequently, the second substrate W2 is transported to the second holding unit 141 and held by the second holding unit 141 with the notch portion facing a predetermined direction (step S109). Specifically, the second holding unit 141 operates the suction device 205 to evacuate the second substrate W2 from the suction port 204 in the suction region R1. Here, the first suction region R1 and the second suction region R2 are separated by the non-contact ribs, the outer peripheral rib 202 and the central rib 203, so when evacuating from the suction port 204 is started, evacuating is performed in the order of suction region R1, then R2. The negative pressure in suction regions R1 and R2 approaches atmospheric pressure in the order of suction region R1, then R2. As a result, the second substrate W2 is held by the first suction region R1 and then held by the second suction region R2.

[0072] Next, the horizontal position of the first substrate W1 held by the first holding part 140 and the second substrate W2 held by the second holding part 141 is adjusted (step S110).

[0073] Next, the vertical position of the first substrate W1 held by the first holding part 140 and the second substrate W2 held by the second holding part 141 is adjusted (step S111). Specifically, the second substrate W2 is brought closer to the first substrate W1 by moving the second holding part 141 vertically upward using a moving mechanism (not shown) that moves the second holding part 141 vertically.

[0074] Subsequently, the first substrate W1 and the second substrate W2 are joined together (step S112). The specific joining procedure in step S112 will be described later with reference to Figures 7 and 8.

[0075] Subsequently, the polymerized substrate T, after bonding is complete, is removed from the bonding apparatus 41 by the transport device 61. This completes the series of bonding processes.

[0076] In this embodiment, an example is shown where the vertical position adjustment in step S111 is performed after the horizontal position adjustment in step S110. However, the horizontal position adjustment may be performed after the vertical position adjustment.

[0077] <Joining Procedure> Next, the procedure for the joining process performed by the joining system 1 will be described with reference to Figure 7. Figure 7 is a flowchart showing the procedure for the joining process performed by the joining system 1 according to the first embodiment. The various processes shown in Figure 7 are performed based on control by the control unit 70.

[0078] First, the striker 190 presses the center of the first substrate W1 from above with a predetermined pressure via the holding member 150 (step S201). As a result, the center of the first substrate W1 and the center of the second substrate W2 come into contact, and bonding begins between the center of the first substrate W1 and the center of the second substrate W2.

[0079] Specifically, since the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 are modified in steps S101 and S109 described above, van der Waals forces (intermolecular forces) are first generated between the bonding surfaces W1j and W2j, and the bonding surfaces W1j and W2j are joined together. Furthermore, since the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 are hydrophilized in steps S102 and S110 described above, the hydrophilic groups between the bonding surfaces W1j and W2j form hydrogen bonds, and the bonding surfaces W1j and W2j are firmly joined together. In this way, a bonding region A (see Figure 2) is first formed between the first substrate W1 and the second substrate W2.

[0080] Next, a bonding wave is generated between the first substrate W1 and the second substrate W2. This causes the bonding region A to expand from the center outwards of both substrates (step S202A). In parallel with step S202A, the control unit 70 controls the lifting mechanism 160 to start the lowering of the holding member 150 (step S202B).

[0081] Next, the bonding region A expands from the center outward of both substrates (step S203A). At this time, the control unit 70 controls each lifting mechanism 160 to lower the holding member 150 while maintaining the state in which the first substrate W1 is held by the holding member 150. In this way, the first substrate W1 and the second substrate W2 are bonded together while the expansion speed of the bonding region A by the bonding wave is controlled to be the same within the substrate surface (step S202A). Note that the lowering speeds of each lifting mechanism 160 do not have to be the same. This point will be explained later.

[0082] Subsequently, when the bonding region A reaches the outer edge of both substrates, the bonding of the first substrate W1 and the second substrate W2 is completed (step S204A). Also, when the bonding of the substrates is completed in step S204A, the control unit 70 stops the lowering of the holding member 150 by the lifting mechanism 160 (step S204B).

[0083] Next, the bonded polymerized substrate T is separated from the holding member 150 (step S205).

[0084] Next, the control unit 70 controls the lifting mechanism 160 to raise the holding member 150 and the striker 190 to their initial positions (step S206). The initial positions referred to here are those before the start of the joining process, that is, before the holding member 150 and the striker 190 begin to descend.

[0085] <Specific operation of the joining system in the joining process> Next, the specific operation of the joining system 1 in the joining process will be described with reference to Figure 8. Figure 8 is a diagram illustrating the specific operation of the joining process performed by the joining system 1 according to the first embodiment. The various processes shown in Figure 8 are executed based on control by the control unit 70. Figure 8 is an enlarged cross-sectional view showing the configuration of the joining device 41 from the central part to the outer periphery in the X-axis direction.

[0086] First, the striker 190 presses the center of the first substrate W1 from above with a predetermined pressure. Specifically, the pressing pin 191 of the striker 190 presses the center of the holding member 150. As a result, the central part of the first substrate W1 is pressed from above via the holding member 150, and the first substrate W1 and the second substrate W2 come into contact at their centers.

[0087] Next, bonding waves are generated between the first substrate W1 and the second substrate W2. As a result, the bonding region A expands from the center outward of both substrates. At this time, the control unit 70 controls the lifting mechanism 160 to lower the holding member 150 while maintaining the state in which the first substrate W1 is held by the holding member 150. The holding member 150 and the first substrate W1 are flexible. Therefore, the bonding progresses with the holding member 150 and the first substrate W1 curving from the center outward of the first substrate W1.

[0088] With this bonding process, the expansion rate of the bonding region A by the bonding wave can be controlled by adjusting the descent speed of the holding member 150. Specifically, the greater the descent speed of the holding member 150, the greater the expansion rate of the bonding region A.

[0089] Furthermore, with this bonding process, the holding member 150 that adsorbs and holds the first substrate W1 descends, making it less likely for tensile stress to be generated inside the first substrate W1 compared to the conventional method where the holding part that holds the first substrate W1 does not move up and down. Also, because the holding member 150 is flexible, it is less likely for tensile stress to be generated inside the first substrate W1 compared to the conventional method where the holding part that holds the first substrate W1 is not flexible. As a result, when bonding the first substrate W1 and the second substrate W2, it is less likely for inflation positions to occur in the first substrate W1. Therefore, the bonding accuracy of the polymer substrate T can be improved over the entire surface, including the outer periphery.

[0090] In this example, we have described a case where the entire surface of the first substrate W1 is held by the holding member 150 while being bonded. However, the first substrate W1 may separate from the holding member 150 as the bonding progresses. Specifically, the first substrate W1 may be peeled away from the holding member 150 by the bonding force in the bonding region A while being bonded.

[0091] The control unit 70 may lower the holding member 150 while controlling the first lifting mechanism 160A and the second lifting mechanism 160B at different speeds. Specifically, for example, the first lifting mechanism 160A located in the 90-degree direction may be lowered at speed V1, and the second lifting mechanism located in the 45-degree direction may be lowered at speed V2 which is greater than V1.

[0092] With this configuration, the bonding between the first substrate W1 and the second substrate W2 can be controlled so that the expansion rate of the bonding region A is the same in the 90-degree direction and the 45-degree direction. As a result, even if the first substrate W1 (and the second substrate W2) have the anisotropy of the crystal orientation described above, the bonding accuracy of the polymerized substrate T can be improved over the entire surface, including the outer periphery.

[0093] Next, the bonding region A reaches the outer edges of both substrates, completing the bonding of the first substrate W1 and the second substrate W2. The control unit 70 stops the lowering of the holding member 150 by the lifting mechanism 160 when the bonding of the substrates is complete. In Figure 8, the outer periphery of the holding member 150 is shown lowered to the same height as the first substrate W1, but the lifting range of the holding member 150 is not limited to the illustrated case. Specifically, it is sufficient that no inflation position occurs in the first substrate W1. For this reason, the holding member 150 may stop lowering, for example, above the first substrate W1, or it may lower, for example, below the first substrate W1.

[0094] Next, the control unit 70 controls the lifting mechanism 160 to raise the holding member 150 and the striker 190. Here, the holding force of the holding member 150 in holding the polymer substrate T by electrostatic attraction is smaller than the holding force of the second holding part 141 in holding the polymer substrate T. Therefore, by raising the holding member 150, the polymer substrate T is separated from the holding member 150. After that, the holding member 150 and the striker 190 rise to their initial positions, and the bonding process by the bonding device 41 is completed.

[0095] When separating the polymer substrate T from the holding member 150, for example, the polymer substrate T may be pressed from below. In this case, the second holding part 141 may have, for example, a pressing part (not shown). By pressing the polymer substrate T and causing it to warp, the polymer substrate T can be made easier to peel off from the holding member 150. In this case, after separating the polymer substrate T from the holding member 150, the control unit 70 may raise the holding member 150 and the striker 190.

[0096] <Second Embodiment> Next, the configuration of the joining device 41 according to the second embodiment will be described with reference to Figures 9 to 11. Figure 9 is a schematic diagram showing the configuration of the joining device 41 according to the second embodiment. Figure 10 is a plan view of the first holding part 140 according to the second embodiment, viewed from above. As shown in Figures 9 and 10, the joining device 41 according to the second embodiment further has a plurality of pressing mechanisms 180.

[0097] The pressing mechanism 180 includes a pressing member 181, a linear motion mechanism 182, and a support member 183.

[0098] The multiple pressing members 181 press the first substrate W1, which is held by the holding member 150 via the holding member 150, from above, bringing it into contact with the second substrate W2. The multiple pressing members 181 may be, for example, cylindrical members with different diameters from each other in a plan view of the first holding portion 140 (see Figure 10). The multiple pressing members 181 may be arranged at intervals along the radial direction of the first substrate W1.

[0099] Multiple pressing members 181 are vertically movable by a linear motion mechanism 182 positioned on the upper surface of the main body 170. Specifically, each pressing member 181 is supported by a support member 183 connected to the linear motion mechanism 182. In this case, a portion of the support member 183 is inserted through multiple through holes provided in the main body 170. This allows the pressing members 181 to move along the vertical direction.

[0100] Figure 11 is a diagram illustrating the specific operation in the bonding process performed by the bonding system 1 according to the second embodiment. In the bonding process according to the second embodiment, first, the striker 190 presses the center of the first substrate W1 from above via the holding member 150, bringing the first substrate W1 into contact with the second substrate W2. Subsequently, while maintaining the state in which the first substrate W1 is held by the holding member 150, a plurality of pressing members 181 descend sequentially from the center side to the outer circumference of the first substrate W1. As a result, the first substrate W1 is pressed sequentially from the center side to the outer circumference and comes into contact with the second substrate W2. After that, when the bonding of the polymer substrate T1 is completed, the holding member 150, the pressing members 181, and the striker 190 rise, and the series of bonding processes is completed.

[0101] With this configuration, compared to the case where only the central part of the first substrate W1 is pressed by the striker 190, substantially the entire surface of the first substrate W1 can be pressed, thereby improving the in-plane uniformity of the bonding of the polymer substrate T.

[0102] In the second embodiment, the first substrate W1 and the second substrate W2 may be joined without lowering the holding member 150 using the lifting mechanism 160. Specifically, the position of the outer periphery of the holding member 150 may be fixed while performing the joining process. In the second embodiment, the expansion speed of the joining region A can be controlled by controlling the timing of pressing the first substrate W1 by the multiple pressing members 181. Furthermore, because the holding member 150 is flexible, even if the position of the outer periphery of the holding member 150 is fixed, inflation positions are less likely to occur in the first substrate W1 during joining. The fixed position of the outer periphery of the holding member 150 should be a position where no inflation positions occur in the first substrate W1. Such a fixed position can be adjusted by raising or lowering the lifting mechanism 160.

[0103] Next, a modified example of the joining device 41 according to the second embodiment will be described. Figure 12 is a schematic diagram showing a modified example of the configuration of the joining device 41 according to the second embodiment. Figure 13 is a plan view of the first holding portion 140 in Figure 12, viewed from above.

[0104] In the second embodiment, the plurality of pressing members 181 may be pressing pins. That is, each pressing member 181 may be a cylindrical member extending along the vertical direction. In this case, the plurality of pressing members 181 may be arranged in the 90-degree direction and the 45-degree direction, respectively, on the circumference of a plurality of concentric circles positioned at intervals along the radial direction of the first substrate W1. When the pressing members 181 are pressing pins, the pressing mechanism 180 may have an actuator unit that controls the pressing load on the first substrate W1 by the pressing members 181, and a linear motion mechanism that moves the actuator unit in the vertical direction, similar to the striker 190 described above.

[0105] <Third Embodiment> Next, the configuration of the joining device 41 according to the third embodiment will be described with reference to Figures 14 and 15. Figure 14 is a schematic diagram showing the configuration of the joining device 41 according to the third embodiment. As shown in Figure 14, in the joining device 41 according to the third embodiment, the first holding part 140 has a base member 210 that holds the holding member 150 by suction.

[0106] The base member 210 is located below the main body 170. The holding member 150 is held by suction on the lower surface of the base member 210. The first substrate W1 is held by suction on the lower surface of the holding member 150. The base member 210 may be, for example, a disc-shaped member with a larger diameter than the first substrate W1. In the third embodiment, the outer periphery of the base member 210 is supported by the support portion 161 of the lifting mechanism 160. This allows the holding member 150, which is held by suction on the base member 210, to be raised or lowered by raising or lowering the base member 210.

[0107] The base member 210 may have a plurality of suction ports 211 on its outer circumference. The suction ports 211 may be connected to a suction device 220 via a suction tube 221. The suction device 220 is, for example, a vacuum pump. The retaining member 150 may be held by suction to the base member 210 by such suction ports 211. In this case, the retaining member 150 is detachable from the base member 210. This allows the retaining member 150 to be easily replaced even if it deteriorates.

[0108] Next, the joining process performed by the joining system 1 will be described with reference to Figure 15. Figure 15 is a flowchart showing the procedure of the joining process performed by the joining system according to the third embodiment. Note that among the processes shown in Figure 15, those that are the same as those shown in Figure 6 will not be explained here.

[0109] In the third embodiment, the bonding system 1 shown in Figure 1 may further include a cassette C5 that houses the retaining member 150. Also in the third embodiment, a suction mechanism and a release mechanism may be provided in front of the first retaining section 140 shown in Figure 4.

[0110] In the third embodiment, after the processing in step S304 is completed, the first substrate W1 is transferred from the inversion mechanism to the adsorption mechanism. In the adsorption mechanism, the first substrate W1 is adsorbed onto the holding member 150 by electrostatic adsorption (step S305). Specifically, with the holding member 150 and the first substrate W1 in contact, a voltage is applied to the holding member 150. As a result, the first substrate W1 is adsorbed and held onto the holding member 150 by Coulomb force, as described above.

[0111] Subsequently, the holding member 150 (and the first substrate W1) is transferred from the suction mechanism to the first holding unit 140, and the holding member 150 is held by the first holding unit 140 through suction (step S306).

[0112] In the third embodiment, once the substrate bonding process in step S313 is completed, the base member 210 stops adsorbing and holding the first substrate W1. This separates the polymerized substrate T from the base member 210. After step S313, the polymerized substrate T is transferred from the second holding unit 141 to the peeling device. The peeling procedure separates the polymerized substrate T from the holding member 150 (step S314). Specifically, the peeling device separates the polymerized substrate T from the holding member 150 by, for example, pressing the polymerized substrate T and causing it to warp.

[0113] Subsequently, the polymerized substrate T, which has been peeled off from the holding member 150, is discharged from the bonding device 41 by the transport device 61. This completes the series of bonding processes.

[0114] In this example, the holding member 150 and the first substrate W1 are adsorbed by an adsorption mechanism. However, the holding member 150 and the first substrate W1 may be brought into the bonding apparatus 41 already adsorbed. In this case, the base member 210 of the first holding unit 140 will adsorb and hold the holding member 150 with the first substrate W1 adsorbed on it, and then the processes in steps S311 to S314 will be carried out.

[0115] Furthermore, Figure 15 shows an example where the vertical position adjustment in step S312 is performed after the horizontal position adjustment in step S311, but the horizontal position adjustment may also be performed after the vertical position adjustment.

[0116] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0117] Furthermore, this technology can also be configured as follows. (1) A first holding part that holds the first substrate from above, A second holding portion is positioned below the first holding portion and holds the second substrate, which is bonded to the first substrate, from below. A striker presses the center of the first substrate held in the first holding part from above. It has, The first retaining part is, A holding member that is flexible, has a larger diameter than the first substrate, and holds the first substrate by adsorption, A lifting mechanism for raising and lowering the holding member and It has, The lifting mechanism is positioned radially outward from the first substrate. Bonding equipment. (2) The bonding device according to (1) above, wherein the holding member is a thin, plate-shaped member made of silicon. (3) It has a control unit, The bonding apparatus according to (1) or (2), wherein the control unit controls the striker to press the center of the first substrate from above, bringing the first substrate into contact with the second substrate, and then controls the lifting mechanism to lower the holding member while maintaining the state in which the first substrate is held by the holding member. (4) The first holding portion is a joining device according to any one of (1) to (3) above, having a plurality of the lifting mechanisms. (5) The aforementioned multiple lifting mechanisms are Four first lifting mechanisms, Four second lifting mechanisms and Composed of, The first substrate is a single-crystal silicon wafer with the crystal direction perpendicular to the surface being

[0100] . The bonding apparatus according to (4), wherein when the direction from the center of the first substrate toward the [0-11] crystal direction parallel to the surface of the first substrate is defined as 0 degrees, the four first lifting mechanisms are arranged at 90-degree intervals with respect to the 0-degree direction, and the four second lifting mechanisms are arranged at 90-degree intervals with respect to the 45-degree direction. (6) It has a control unit, The bonding apparatus according to (5), wherein the control unit controls the striker to press the center of the first substrate from above, bringing the first substrate into contact with the second substrate, and then, while maintaining the state in which the first substrate is held by the holding member, controls the four first lifting mechanisms and the four second lifting mechanisms to different descent speeds to lower the holding member. (7) The first holding portion further comprises a plurality of pressing members that press the first substrate, which is held by suction in the first holding portion, from above. The bonding apparatus according to any one of (1) to (6), wherein the plurality of pressing members are arranged at intervals along the radial direction of the first substrate. (8) It has a control unit, The bonding apparatus according to (7), wherein the control unit controls the striker to press the center of the first substrate from above, bringing the first substrate into contact with the second substrate, and then, while maintaining the state in which the first substrate is held by the holding member by suction, controls the plurality of pressing members to press the first substrate from the center to the outer circumference of the first substrate. (9) The first holding portion further includes a base member that adsorbs and holds the holding member, The retaining member is detachable from the base member. The lifting mechanism lifts the holding member, which is held by suction on the base member, by raising and lowering the base member, the joining device according to any one of (1) to (8) above. (10) A bonding method for joining a first substrate and a second substrate, A step of holding the first substrate using a first holding part that holds the first substrate from above, A step of holding the second substrate using a second holding part that holds the second substrate from below, A step of bringing the first substrate into contact with the second substrate using a striker that presses the center of the first substrate from above. Includes, The first retaining part is, A holding member that is flexible, has a larger diameter than the first substrate, and holds the first substrate by adsorption, A lifting mechanism for raising and lowering the holding member and It has, The lifting mechanism is positioned radially outward from the first substrate. A joining method further comprising the step of lowering the holding member by controlling the lifting mechanism while maintaining the state in which the first substrate is adsorbed and held by the holding member, after the contact step. [Explanation of Symbols]

[0118] 1. Joining System 41 Joining equipment 70 Control Unit 140 1st holding part 141 Second holding part 150 Retaining member 160 Lifting mechanism 160A First Lifting Mechanism 160B Second Lifting Mechanism 181 Pressing member 190 Striker 210 Base member A joining area W1 First Circuit Board W2 Second Board

Claims

1. A first holding part that holds the first substrate from above, A second holding portion is positioned below the first holding portion and holds the second substrate, which is bonded to the first substrate, from below. A striker that presses the center of the first substrate held in the first holding part from above, It has, The first retaining part is, A holding member that is flexible, has a larger diameter than the first substrate, and holds the first substrate by adsorption, A lifting mechanism for raising and lowering the holding member and It has, The lifting mechanism is positioned radially outward from the first substrate. Bonding equipment.

2. The bonding apparatus according to claim 1, wherein the holding member is a thin, plate-shaped member made of silicon.

3. It has a control unit, The bonding apparatus according to claim 1, wherein the control unit controls the striker to press the center of the first substrate from above, bringing the first substrate into contact with the second substrate, and then controls the lifting mechanism to lower the holding member while maintaining the state in which the first substrate is held by the holding member.

4. The joining device according to claim 1, wherein the first holding portion has a plurality of the lifting mechanisms.

5. The aforementioned multiple lifting mechanisms are Four first lifting mechanisms, Four second lifting mechanisms and Composed of, The first substrate is a single-crystal silicon wafer with the crystal direction perpendicular to the surface being the [100] crystal direction. The bonding apparatus according to claim 4, wherein when the direction from the center of the first substrate toward the [0-11] crystal direction parallel to the surface of the first substrate is defined as 0 degrees, the four first lifting mechanisms are arranged at 90-degree intervals with respect to the 0-degree direction, and the four second lifting mechanisms are arranged at 90-degree intervals with respect to the 45-degree direction.

6. It has a control unit, The bonding apparatus according to claim 5, wherein the control unit controls the striker to press the center of the first substrate from above, bringing the first substrate into contact with the second substrate, and then, while maintaining the state in which the first substrate is held by the holding member, controls the four first lifting mechanisms and the four second lifting mechanisms to different descent speeds to lower the holding member.

7. The first holding portion further comprises a plurality of pressing members that press the first substrate, which is held by suction in the first holding portion, from above. The bonding apparatus according to claim 1, wherein the plurality of pressing members are arranged at intervals along the radial direction of the first substrate.

8. It has a control unit, The bonding apparatus according to claim 7, wherein the control unit controls the striker to press the center of the first substrate from above, bringing the first substrate into contact with the second substrate, and then, while maintaining the state in which the first substrate is held by the holding member by suction, controls the plurality of pressing members to press the first substrate from the center to the outer circumference of the first substrate.

9. The first holding portion further includes a base member that adsorbs and holds the holding member, The retaining member is detachable from the base member. The joining device according to claim 1, wherein the lifting mechanism lifts the base member up and down, thereby lifting the holding member which is held by suction on the base member.

10. A bonding method for joining a first substrate and a second substrate, A step of holding the first substrate using a first holding part that holds the first substrate from above, A step of holding the second substrate using a second holding part that holds the second substrate from below, A step of bringing the first substrate into contact with the second substrate using a striker that presses the center of the first substrate from above. Includes, The first retaining part is, A holding member that is flexible, has a larger diameter than the first substrate, and holds the first substrate by adsorption, A lifting mechanism for raising and lowering the holding member and It has, The lifting mechanism is positioned radially outward from the first substrate. A joining method further comprising the step of lowering the holding member by controlling the lifting mechanism while maintaining the state in which the first substrate is adsorbed and held by the holding member, after the contact step.

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