Mask group, mask, and method for manufacturing organic devices

Abstract

To increase the light transmittance in organic devices. [Solution] The mask group may comprise two or more masks. The masks may comprise shielding regions and through holes. A mask laminate 55 formed by stacking two or more masks may comprise through regions 55A that overlap the through holes when viewed along the normal direction of the masks. When viewed along the normal direction of the masks, the mask laminate may comprise a first mask region M1 including through regions having a first aperture ratio, and a second mask region M2 including through regions having a second aperture ratio smaller than the first aperture ratio. In the second mask region, the through regions may comprise through lines aligned in the first mask direction. The through lines may comprise through sections aligned in the second mask direction. The through sections may comprise a first through section 56A having a first through shape, and a second through section 56B having a second through shape different from the first through shape.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a method for manufacturing a mask group, a mask, and an organic device.

Background Art

[0002] In recent years, in electronic devices such as smartphones and tablet PCs, high-definition display devices have been demanded by the market. The display device has, for example, a pixel density of 400 ppi or more, 800 ppi or more, or the like.

[0003] An organic EL display device has attracted attention because it has good responsiveness and / or low power consumption. As a method for forming pixels of an organic EL display device, a method of attaching materials constituting the pixels to a substrate by vapor deposition is known. For example, first, a substrate on which an anode is formed in a pattern corresponding to an element is prepared. Subsequently, an organic layer is formed on the anode by attaching an organic material onto the anode through a through hole of a mask. Subsequently, a cathode is formed on the organic layer by attaching a conductive material onto the organic layer through a through hole of the mask.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] The larger the area of the cathode, the lower the electrical resistance of the cathode. On the other hand, the larger the area of the cathode, the lower the light transmittance in the organic device.

Means for Solving the Problems

[0006] A group of masks according to one embodiment of the present disclosure comprises two or more masks, each of which may have a shielding region and through holes. A mask laminate formed by stacking two or more of the masks may have through regions that overlap the through holes when viewed along the normal direction of the masks. When viewed along the normal direction of the masks, the mask laminate may comprise a first mask region including the through regions having a first aperture ratio, and a second mask region including the through regions having a second aperture ratio smaller than the first aperture ratio. In the second mask region, the through regions may include through lines aligned in the first mask direction. The through lines may include through sections aligned in the second mask direction. Two adjacent through sections in the second mask direction may be connected to each other. The through sections may include a first through section having a first through shape, and a second through section having a second through shape different from the first through shape. [Effects of the Invention]

[0007] According to one embodiment of this disclosure, the light transmittance in an organic device can be increased. [Brief explanation of the drawing]

[0008] [Figure 1] This is a plan view showing an example of an organic device according to one embodiment of the present disclosure. [Figure 2] This is a plan view showing the second display area of ​​the organic device. [Figure 3] This is a plan view showing the second electrode of the second display area. [Figure 4] This is a plan view showing an example of the first electrode section of the second electrode. [Figure 5] This is a plan view showing an example of the second electrode section of the second electrode. [Figure 6] This is a plan view showing the region enclosed by the dashed line labeled VI in the organic device shown in Figure 3. [Figure 7] This is a plan view showing the organic device in Figure 6 with the second electrode removed. [Figure 8] It is a cross-sectional view along the A-A line of the organic device in FIG. 6. [Figure 9] It is a cross-sectional view along the B-B line of the organic device in FIG. 6. [Figure 10] It is a diagram showing an example of a vapor deposition apparatus equipped with a mask device. [Figure 11] It is a plan view showing an example of a mask device. [Figure 12] It is a plan view showing the mask of the mask device. [Figure 13] It is a diagram showing the first mask device, the second mask device, and the third mask device. [Figure 14] It is a diagram showing an example of the cross-sectional structure of the mask. [Figure 15] It is a plan view showing an example of the first mask. [Figure 16] It is a plan view showing an example of the first mask. [Figure 17] It is a plan view showing an example of the second mask. [Figure 18] It is a plan view showing an example of the third mask. [Figure 19] It is a plan view showing an example of a mask laminate. [Figure 20] It is a plan view showing an example of the first through-section of the mask laminate. [Figure 21] It is a plan view showing an example of the second through-section of the mask laminate. [Figure 22] It is a plan view showing an example of the second display area according to the reference form. [Figure 23] It is a plan view showing an example of the first electrode section. [Figure 24] It is a plan view showing an example of the second electrode section. [Figure 25] It is a plan view showing an example of the first through-section. [Figure 26] It is a plan view showing an example of the second through-section. [Figure 27] It is a plan view showing an example of the second electrode of the second display area. [Figure 28] It is a plan view showing an example of the first mask. [Figure 29] This is a plan view showing an example of a second mask. [Figure 30] This is a plan view showing an example of the first mask. [Figure 31] This is a plan view showing an example of a second mask. [Figure 32] This is a plan view showing an example of the first mask. [Figure 33] This is a plan view showing an example of a second mask. [Figure 34] This is a plan view showing an example of the first mask. [Figure 35] This is a plan view showing an example of a second mask. [Figure 36] This is a plan view showing an example of a third mask. [Figure 37] This is a plan view showing an example of the second electrode in the second display area. [Figure 38] This is a plan view showing the second electrode related to Example 1. [Figure 39] This figure shows the method for evaluating the diffraction characteristics of the second electrode. [Figure 40] This figure shows the evaluation results for the second electrode in Example 1. [Figure 41] This figure shows the evaluation results for the second electrode in Example 1. [Figure 42] This is a plan view showing the second electrode of the second display area according to Example 2. [Figure 43] This figure shows the evaluation results for the second electrode in Example 2. [Figure 44] This figure shows the evaluation results for the second electrode in Example 2. [Figure 45] This is a plan view showing an example of the second electrode in the second display area. [Figure 46] This is a plan view showing an example of the first electrode section, second electrode section, and third electrode section of the second electrode. [Figure 47] This is a plan view showing an example of an organic device. [Figure 48] This is a plan view showing an example of the second display area. [Figure 49] This is a plan view showing an example of a mask for forming an inhibitory layer. [Figure 50] This is a cross-sectional view showing an example of the process for forming the suppression layer. [Figure 51] This is a plan view showing an example of a mask for forming the second electrode. [Figure 52] This is a cross-sectional view showing an example of the process for forming the second electrode. [Figure 53] This is a cross-sectional view showing an example of the process for forming the second electrode. [Figure 54] This is a cross-sectional view showing an example of the process for removing the second electrode. [Modes for carrying out the invention]

[0009] In this specification and these drawings, unless otherwise specified, terms such as "substrate," "base material," "plate," "sheet," and "film," which refer to the material that forms the basis of a certain structure, are not distinguished from one another solely by differences in designation.

[0010] In this specification and these drawings, unless otherwise specified, terms that identify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," as well as values ​​of lengths and angles, should be interpreted not strictly, but to include a range in which similar functionality can be expected.

[0011] In this specification and these drawings, unless otherwise specified, when a component or region is described as being "on top of," "below," "upper side," "lower side," or "upward" or "downward" of another component or region, this includes cases where one component is in direct contact with another. Furthermore, it also includes cases where another component is located between one component and another, i.e., where they are indirectly in contact. In addition, unless otherwise specified, the terms "up," "upper side," or "upward," or "down," "lower side," or "downward," may be used with the direction of up and down reversed.

[0012] In this specification and these drawings, unless otherwise specified, identical or similarly functioning parts are denoted by the same or similar reference numerals, and repeated descriptions may be omitted. Furthermore, the dimensional ratios in the drawings may differ from the actual ratios for illustrative purposes, and some components may be omitted from the drawings.

[0013] In this specification and these drawings, embodiments of the disclosure may be combined with other embodiments and modifications to the extent that they do not contradict each other, unless otherwise specified. Other embodiments may also be combined with each other, and other embodiments with modifications to the extent that they do not contradict each other. Modifications may also be combined with each other to the extent that they do not contradict each other.

[0014] In this specification and these drawings, unless otherwise specified, when disclosing multiple steps in a method such as a manufacturing method, other steps not disclosed may be performed between the disclosed steps. Furthermore, the order of the disclosed steps is arbitrary as long as it does not create a contradiction.

[0015] In this specification and these drawings, unless otherwise specified, a range represented by the symbol "~" includes the numbers or elements placed before and after the symbol "~". For example, the numerical range defined by the expression "34~38 mass%" is the same as the numerical range defined by the expression "34 mass% or more and 38 mass% or less". For example, the range defined by the expression "mask 50A~50C" includes masks 50A, 50B, and 50C.

[0016] In one embodiment of this specification, an example is described in which a group of masks comprising multiple masks is used to form electrodes on a substrate when manufacturing an organic EL display device. However, the use of the group of masks is not particularly limited, and this embodiment can be applied to groups of masks used for various purposes. For example, the group of masks of this embodiment may be used to form electrodes for a device that displays or projects images or videos for representing virtual reality (VR) or augmented reality (AR). The group of masks of this embodiment may also be used to form electrodes for display devices other than organic EL displays, such as electrodes for liquid crystal displays. Furthermore, the group of masks of this embodiment may be used to form electrodes for organic devices other than display devices, such as electrodes for pressure sensors.

[0017] A first aspect of this disclosure is an organic device, circuit board and A first electrode located on the substrate, The organic layer located on the first electrode, The system comprises a second electrode located on the organic layer, When viewed along the direction normal to the substrate, the organic device comprises a first display region including the second electrode having a first occupancy rate, and a second display region including the second electrode having a second occupancy rate smaller than the first occupancy rate. In the second display area, The organic layers are arranged in a first direction and in a second direction intersecting the first direction. The second electrode includes electrode lines aligned in the first direction, The electrode line includes an electrode section aligned in the second direction and overlapping the organic layer, In the second direction, two adjacent electrode sections are connected to each other. The electrode section is an organic device comprising a first electrode section having a first shape and a second electrode section having a second shape different from the first shape.

[0018] A second aspect of the present disclosure is an organic device according to the first aspect described above, wherein the first electrode section may include a first pixel section overlapping the organic layer and a first connection section connected to the first pixel section. The second electrode section may include a second pixel section overlapping the organic layer and a second connection section connected to the second pixel section. The shape of the first connection section may differ from the shape of the second connection section.

[0019] A third aspect of this disclosure is an organic device according to the second aspect described above, wherein the area of ​​the first connection section may be different from the area of ​​the second connection section.

[0020] A fourth aspect of the present disclosure is an organic device according to either the second or third aspect described above, wherein the first connection section may include a first connection end connected to the first pixel section and a second connection end located opposite to the first connection end in the second direction. The position of the first connection end in the first direction may be the same as the position of the second connection end in the first direction. The second connection section may include a third connection end connected to the second pixel section and a fourth connection end located opposite to the third connection end in the second direction. The position of the third connection end in the first direction may be different from the position of the fourth connection end in the first direction.

[0021] A fifth aspect of the present disclosure is an organic device according to each of the first to fourth aspects described above, wherein the first electrode section may include a first pixel section overlapping the organic layer and a first connection section connected to the first pixel section. The second electrode section may include a second pixel section overlapping the organic layer and a second connection section connected to the second pixel section. The shape of the first pixel section may differ from the shape of the second pixel section.

[0022] A sixth aspect of this disclosure is an organic device according to the fifth aspect described above, wherein the area of ​​the first pixel section may be different from the area of ​​the second pixel section.

[0023] A seventh aspect of the present disclosure is an organic device according to either the fifth aspect or the sixth aspect described above, wherein the dimensions of the first pixel section in the first direction may differ from the dimensions of the second pixel section in the first direction.

[0024] An eighth aspect of the present disclosure is an organic device according to each of the first to seventh aspects described above, wherein the electrode section may include a first electrode connection connecting the first electrode section and the second electrode section in the second direction, and a second electrode connection connecting the first electrode section and the first electrode section in the second direction.

[0025] A ninth aspect of the present disclosure is an organic device according to each of the first to eighth aspects described above, wherein the electrode section may include a first electrode arrangement in which the first electrode section and the second electrode section are aligned in the first direction, and a second electrode arrangement in which the first electrode section and the first electrode section are aligned in the first direction.

[0026] A tenth aspect of the present disclosure is an organic device according to each of the first to ninth aspects described above, wherein the electrode section may include a third electrode section having a third shape different from the first and second shapes.

[0027] An eleventh aspect of this disclosure is a group of masks having a first mask direction and a second mask direction intersecting the first mask direction, With two or more masks, The mask comprises a shielding region and through holes, A mask laminate formed by stacking two or more of the aforementioned masks includes through-regions that overlap the through-holes when viewed along the normal direction of the masks, When viewed along the normal direction of the mask, the mask laminate comprises a first mask region including the through region having a first aperture ratio, and a second mask region including the through region having a second aperture ratio smaller than the first aperture ratio. In the second mask region, the through region includes through lines aligned in the first mask direction. The through line includes through sections aligned in the second direction of the mask, In the second direction of the mask, two adjacent through sections are connected to each other. The through-section is a group of masks that includes a first through-section having a first through-shape and a second through-section having a second through-shape different from the first through-shape.

[0028] A twelfth aspect of this disclosure is a group of masks according to the eleventh aspect described above, wherein the first through section may include a first main section and a first subsection connected to the first main section. The second through section may include a second main section and a second subsection connected to the second main section. The shape of the first subsection may differ from the shape of the second subsection.

[0029] A thirteenth aspect of this disclosure is that, in the mask group according to the twelfth aspect described above, the area of ​​the first subsection may be different from the area of ​​the second subsection.

[0030] A fourteenth aspect of the present disclosure is a group of masks according to either the twelfth or thirteenth aspect described above, wherein the first subsection may include a fifth connection end connected to the first main section and a sixth connection end located on the opposite side of the second mask direction from the fifth connection end. The position of the fifth connection end in the first mask direction may be the same as the position of the sixth connection end in the first mask direction. The second subsection may include a seventh connection end connected to the second main section and an eighth connection end located on the opposite side of the second mask direction from the seventh connection end. The position of the seventh connection end in the first mask direction may be different from the position of the eighth connection end in the first mask direction.

[0031] A fifteenth aspect of this disclosure is a group of masks according to each of the eleventh to fourteenth aspects described above, wherein the first through section may include a first main section and a first subsection connected to the first main section. The second through section may include a second main section and a second subsection connected to the second main section. The shape of the first main section may differ from the shape of the second main section.

[0032] A sixteenth aspect of this disclosure is that, in the mask group according to the fifteenth aspect described above, the area of ​​the first main section may be different from the area of ​​the second main section.

[0033] A 17th aspect of the present disclosure is that in a group of masks according to either the 15th aspect or the 16th aspect described above, the dimensions of the first main section in the first direction of the mask may differ from the dimensions of the second main section in the first direction of the mask.

[0034] An eighteenth aspect of the present disclosure is a group of masks according to each of the eleventh to seventeenth aspects described above, wherein the through section may include a first mask connection in which the first through section and the second through section are connected in the second mask direction, and a second mask connection in which the first through section and the first through section are connected in the second mask direction.

[0035] A 19th aspect of the present disclosure is a group of masks according to each of the 11th to 18th aspects described above, wherein the through section includes a first mask arrangement in which the first through section and the second through section are aligned in the first mask direction, and a second mask arrangement in which the first through section and the first through section are aligned in the first mask direction.

[0036] A 20th aspect of the present disclosure is that in the mask group according to each of the 11th to 19th aspects described above, the through section may include a third through section having a third through shape different from the first through shape and the second through shape.

[0037] A 21st aspect of this disclosure is a mask having a first mask direction and a second mask direction intersecting the first mask direction, It comprises a shielding area and a through hole, When viewed along the normal direction of the mask, the mask comprises a third mask region including the through-hole having a third aperture ratio, and a fourth mask region including the through-hole having a fourth aperture ratio smaller than the third aperture ratio. In the third region of the mask, the through holes are arranged in the first direction of the mask in a 15-period pattern. In the fourth region of the mask, the distance between the two through holes aligned in the first direction of the mask is greater than the 15th period. The fourth region of the mask is a mask that includes through holes having a different shape from the through holes in the third region of the mask.

[0038] A 22nd aspect of this disclosure is a mask according to the 21st aspect described above, wherein in the third region of the mask, the through-holes may include main holes and sub-holes. The distance between the main holes and the sub-holes may be 5 μm or more and 40 μm or less. In the fourth region of the mask, the through-holes may comprise first-type through-holes and second-type through-holes. The number of main holes in the first-type through-holes may differ from the number of main holes in the second-type through-holes. Alternatively, the number of sub-holes in the first-type through-holes may differ from the number of sub-holes in the second-type through-holes.

[0039] A 23rd aspect of the present disclosure is a mask according to the 22nd aspect described above, wherein in the fourth region of the mask, the through holes may include a first arrangement of holes in which the first type through holes and the second type through holes are aligned in the first direction of the mask, and a second arrangement of holes in which the first type through holes are aligned in the first direction of the mask.

[0040] A 24th aspect of the present disclosure is a mask according to either the 22nd aspect or the 23rd aspect described above, wherein in the fourth region of the mask, the through holes may include a fourth arrangement of holes in which the first type through holes and the second type through holes are aligned in the second direction of the mask, and a fifth arrangement of holes in which the second type through holes are aligned in the second direction of the mask.

[0041] A 25th aspect of this disclosure is a method for manufacturing an organic device, The method comprises a second electrode formation step of forming a second electrode on an organic layer on a first electrode on a substrate using a group of masks described in any one of claims 11 to 20, The second electrode formation step is as follows: A step of forming the first layer of the second electrode by a deposition method using the first mask, A method for manufacturing an organic device, comprising the step of forming a second layer of the second electrode by a deposition method using the second mask.

[0042] One embodiment of this disclosure will be described in detail with reference to the drawings. Note that the embodiments described below are examples of embodiments of this disclosure, and this disclosure is not to be construed as being limited to these embodiments only.

[0043] First, the organic device 100 will be described. The organic device 100 includes electrodes formed by using the mask group of this embodiment. Figure 1 is a plan view showing an example of the organic device 100 as viewed along the direction normal to the substrate of the organic device 100. In the following description, viewing along the direction normal to the surface of a base material such as a substrate will also be referred to as a plan view.

[0044] The organic device 100 includes a substrate and a plurality of elements 115 arranged along the in-plane direction of the substrate. The elements 115 are, for example, pixels. The organic device 100 may include a first display area 101 and a second display area 102 in a plan view, as shown in Figure 1. The second display area 102 may have a smaller area than the first display area 101. As shown in Figure 1, the second display area 102 may be surrounded by the first display area 101. Although not shown, a portion of the outer edge of the second display area 102 may be collinear with a portion of the outer edge of the first display area 101.

[0045] Figure 2 is a plan view showing an enlarged view of the second display area 102 and its surroundings in Figure 1. In the first display area 101, the elements 115 may be arranged along two different directions. In the examples shown in Figures 1 and 2, two or more elements 115 in the first display area 101 may be arranged along the element first direction G1. Two or more elements 115 in the first display area 101 may be arranged along the element second direction G2 which intersects the element first direction G1. The element second direction G2 may be perpendicular to the element first direction G1.

[0046] The organic device 100 includes a second electrode 140. The second electrode 140 is located on an organic layer 130, which will be described later. The second electrode 140 may be electrically connected to two or more organic layers 130. For example, the second electrode 140 may overlap two or more organic layers 130 in a plan view. The second electrode 140 located in the first display area 101 is also referred to as the second electrode 140X. The second electrode 140 located in the second display area 102 is also referred to as the second electrode 140Y.

[0047] The second electrode 140X has a first occupancy ratio. The first occupancy ratio is calculated by dividing the total area of ​​the second electrode 140 located in the first display area 101 by the area of ​​the first display area 101. The second electrode 140Y has a second occupancy ratio. The second occupancy ratio is calculated by dividing the total area of ​​the second electrode 140 located in the second display area 102 by the area of ​​the second display area 102. The second occupancy ratio may be smaller than the first occupancy ratio. For example, as shown in Figure 2, the second display area 102 may include an opaque area 103 and a transparent area 104. The transparent area 104 does not overlap with the second electrode 140Y in a plan view. The opaque area 103 overlaps with the second electrode 140Y in a plan view.

[0048] The ratio of the second market share to the first market share may be, for example, 0.2 or greater, 0.3 or greater, or 0.4 or greater. The ratio of the second market share to the first market share may be, for example, 0.6 or less, 0.7 or less, or 0.8 or less. The range of the ratio of the second market share to the first market share may be determined by a first group consisting of 0.2, 0.3 and 0.4, and / or a second group consisting of 0.6, 0.7 and 0.8. The range of the ratio of the second market share to the first market share may be determined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of the second market share to the first market share may be determined by a combination of any two values ​​from the first group. The range of the ratio of the second market share to the first market share may be determined by a combination of any two values ​​from the second group. For example, the ratio of the second occupancy rate to the first occupancy rate may be 0.2 or more and 0.8 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.7 or less, 0.4 or more and 0.6 or less, 0.6 or more and 0.8 or less, 0.6 or more and 0.7 or less, or 0.7 or more and 0.8 or less.

[0049] The transmittance of the non-transparent region 103 is also referred to as the first transmittance. The transmittance of the transparent region 104 is also referred to as the second transmittance. Since the transparent region 104 does not include the second electrode 140Y, the second transmittance is higher than the first transmittance. Therefore, in the second display region 102 which includes the transparent region 104, light that reaches the organic device 100 can pass through the transparent region 104 and reach optical components on the back side of the substrate. Optical components are components that realize some function by detecting light, such as cameras. Since the second display region 102 includes the non-transparent region 103, if the element 115 is a pixel, an image can be displayed in the second display region 102. In this way, the second display region 102 can detect light and display an image. The functions of the second display region 102 realized by detecting light include sensors such as cameras, fingerprint sensors, and facial recognition sensors. The higher the second transmittance and lower the second occupancy rate of the transparent area 104 of the second display area 102, the greater the amount of light the sensor can receive.

[0050] If either the dimension of the non-transparent region 103 in the element's first direction G1 and element's second direction G2, or the dimension of the transmittance region 104 in the element's first direction G1 and element's second direction G2, is 1 mm or less, the first and second transmittances are measured using a micro-spectrophotometer. Either an Olympus OSP-SP200 or an Otsuka Electronics LCF series micro-spectrophotometer can be used. Both micro-spectrophotometers can measure transmittance in the visible range from 380 nm to 780 nm. Quartz, borosilicate glass for TFT liquid crystals, or alkali-free glass for TFT liquid crystals are used as the reference. The measurement results at 550 nm are used as the first and second transmittances. If the dimensions of the non-transmitting region 103 in the first element direction G1 and the second element direction G2, and the dimensions of the transmitting region 104 in the first element direction G1 and the second element direction G2 are both greater than 1 mm, the first and second transmittances are measured using a spectrophotometer. Either the UV-2600i or UV-3600i Plus ultraviolet-visible spectrophotometer manufactured by Shimadzu Corporation can be used. By attaching a micro-aperture unit to the spectrophotometer, the transmittance of a region with a maximum dimension of 1 mm can be measured. Air is used as the reference. The measurement results at 550 nm are used as the first and second transmittances.

[0051] The ratio of the second transmittance TR2 to the first transmittance TR1, TR2 / TR1, may be, for example, 1.2 or greater, 1.5 or greater, or 1.8 or greater. TR2 / TR1 may be, for example, 2 or less, 3 or less, or 4 or less. The range of TR2 / TR1 may be determined by a first group consisting of 1.2, 1.5, and 1.8, and / or a second group consisting of 2, 3, and 4. The range of TR2 / TR1 may be determined by a combination of any one value from the first group and any one value from the second group. The range of TR2 / TR1 may be determined by a combination of any two values ​​from the first group. The range of TR2 / TR1 may be determined by a combination of any two values ​​from the second group. For example, TR2 / TR1 may be 1.2 or more and 4 or less, 1.2 or more and 3 or less, 1.2 or more and 2 or less, 1.2 or more and 1.8 or less, 1.2 or more and 1.5 or less, 1.5 or more and 4 or less, 1.5 or more and 3 or less, 1.5 or more and 2 or less, 1.5 or more and 1.8 or less, 1.8 or more and 4 or less, 1.8 or more and 3 or less, 1.8 or more and 2 or less, 2 or more and 4 or less, 2 or more and 3 or less, and 3 or more and 4 or less.

[0052] As shown in Figure 2, the second electrode 140Y may include two or more electrode lines 140L aligned in the first element direction G1. The electrode lines 140L may extend in the second element direction G2. For example, the electrode line 140L may include a first end 140L1 and a second end 140L2 connected to the second electrode 140X of the first display area 101. The second end 140L2 is located on the opposite side from the first end 140L1 in the second element direction G2. Although not shown, if a portion of the outer edge of the second display area 102 is collinear with a portion of the outer edge of the first display area 101, there may be only one end of the electrode line 140L connected to the second electrode 140X.

[0053] As shown in Figure 2, two adjacent electrode lines 140L in the first direction G1 of the element do not need to be connected to each other. This allows the transparent region 104 to extend in the second direction G2 of the element without being obstructed by the electrode lines 140L. Therefore, it is possible to suppress the periodicity of the transparent region 104 in the second direction G2 of the element. This prevents the light transmitted through the transparent region 104 at each position in the second direction G2 of the element from reinforcing each other.

[0054] As shown in Figure 2, the transparent region 104 may traverse the second display region 102 in the second direction G2 of the element. For example, the electrode line 140L may include a first end 104L1 and a second end 104L2 that are in contact with the second electrode 140X of the first display region 101. This makes the dimension G40 of the transparent region 104 in the second direction G2 of the element larger. Therefore, it is possible to suppress the reinforcement of light transmitted through the transparent region 104 at each position in the second direction G2 of the element. The second end 104L2 is located on the opposite side from the first end 104L1 in the second direction G2 of the element. The first end 104L1 and the second end 104L2 are adjacent to the first end 140L1 and the second end 140L2 of the electrode line 140L in the first direction G1 of the element. Although not shown in the diagram, if a portion of the outer edge of the second display area 102 lies on the same straight line as a portion of the outer edge of the first display area 101, there may be only one end of the transparent area 104 that is in contact with the second electrode 140X in the second direction G2 of the element.

[0055] The larger dimension G40 of the transparent region 104 in the second direction G2 of the element allows light reaching the organic device 100 to more easily pass through the second display region 102. For example, the transmittance of the second display region 102 can be increased. This enhances the light detection function of the second display region 102.

[0056] Not all transparent regions 104 have to cross the second display region 102. For example, the organic device 100 may include at least two transparent regions 104 that cross the second display region 102 in the second element direction G2. For example, the organic device 100 may include at least one set of two unconnected electrode lines 140L that are adjacent in the first element direction G1.

[0057] Figure 3 is a plan view showing an enlarged view of the second electrode 140X in the first display area 101 and the second electrode 140Y in the second display area 102. Both the second electrode 140X and the second electrode 140Y may overlap the organic layer 130 in a plan view. The organic layer 130 is a component of the element 115.

[0058] In the first display area 101, the organic layer 130 may be arranged in a 11th period P11 along the first element direction G1. In the second display area 102, the organic layer 130 may be arranged in a 12th period P12 along the first element direction G1. The 12th period P12 may be larger than the 11th period P11. When the 12th period P12 is larger than the 11th period P11, the second occupancy rate of the second electrode 140Y becomes smaller. As a result, the area of ​​the transparent region 104 increases, and the amount of light received by the sensor can be increased. As will be described later, the 12th period P12 may be the same as the 11th period P11.

[0059] The ratio of the 12th period P12 to the 11th period P11 may be, for example, 1.0 or greater, 1.1 or greater, 1.3 or greater, or 1.5 or greater. The ratio of the 12th period P12 to the 11th period P11 may be, for example, 2.0 or less, 3.0 or less, or 4.0 or less. The range of the ratio of the 12th period P12 to the 11th period P11 may be determined by a first group consisting of 1.0, 1.1, 1.3, and 1.5, and / or a second group consisting of 2.0, 3.0, and 4.0. The range of the ratio of the 12th period P12 to the 11th period P11 may be determined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of the 12th period P12 to the 11th period P11 may be determined by a combination of any two values ​​from the first group. The range of the ratio of the 12th period P12 to the 11th period P11 may be determined by any two combinations of values ​​included in the second group described above. For example, the ratio of the 12th period P12 to the 11th period P11 may be 1.0 or more and 4.0 or less, 1.0 or more and 3.0 or less, 1.0 or more and 2.0 or less, 1.0 or more and 1.5 or less, 1.0 or more and 1.3 or less, 1.0 or more and 1.1 or less, 1.1 or more and 4.0 or less, 1.1 or more and 3.0 or less, 1.1 or more and 2.0 or less, 1.1 or more and 1.5 or less. The following are also acceptable: 1.1 to 1.3, 1.3 to 4.0, 1.3 to 3.0, 1.3 to 2.0, 1.3 to 1.5, 1.5 to 4.0, 1.5 to 3.0, 1.5 to 2.0, 2.0 to 4.0, 2.0 to 3.0, and 3.0 to 4.0. When the ratio of the 12th period P12 to the 11th period P11 is small, the difference in pixel density between the first display area 101 and the second display area 102 becomes small. This suppresses the occurrence of a visual difference between the first display area 101 and the second display area 102.

[0060] The dimension G40 of the transmission region 104 in the second direction G2 of the element may be determined based on the 12th period P12. The ratio of dimension G40 to the 12th period P12 may be, for example, 2 or more, 5 or more, or 10 or more. The ratio of dimension G40 to the 12th period P12 may be, for example, 100 or less, 300 or less, 1000 or less, or 2000 or less. The range of the ratio of dimension G40 to the 12th period P12 may be determined by a first group consisting of 2, 5, and 10, and / or a second group consisting of 100, 300, 1000, and 2000. The range of the ratio of dimension G40 to the 12th period P12 may be determined by a combination of any one value included in the first group and any one value included in the second group. The range of the ratio of dimension G40 to the 12th period P12 may be determined by any two combinations of values ​​included in the first group described above. The range of the ratio of dimension G40 to the 12th period P12 may be determined by any two combinations of values ​​included in the second group described above. For example, the ratio of dimension G40 to period P12 can be 2 or more and 3000 or less, 2 or more and 1000 or less, 2 or more and 300 or less, 2 or more and 100 or less, 2 or more and 100 or less, 2 or more and 5 or less, 5 or more and 2000 or less, 5 or more and 1000 or less, 5 or more and 300 or less, 5 or more and 100 or less, 5 or more and 100 or less, 10 or more and 2000 or less, 10 or more and 1000 or less, 10 or more and 300 or less, 100 or more and 2000 or less, 100 or more and 300 or less, 300 or more and 2000 or less, 300 or more and 1000 or less, or 1000 or more and 2000 or less. By increasing the ratio of dimension G40 to period P12, it is possible to suppress the reinforcement of light transmitted through the transmission region 104 at each position in the second direction G2 of the element.

[0061] Dimension G40 is calculated by measuring the dimensions of all transparent regions 104 located in the second display region 102 in the second element direction G2 and averaging them.

[0062] In the first display area 101, the organic layers 130 may be arranged along the second element direction G2 in a 21st period P21. In the second display area 102, the organic layers 130 may be arranged along the second element direction G2 in a 22nd period P22. The 22nd period P22 may be greater than the 21st period P21. As will be described later, the 22nd period P22 may be the same as the 21st period P21.

[0063] The ratio of the 22nd period P22 to the 21st period P21 may be, for example, 1.0 or greater, 1.1 or greater, 1.3 or greater, or 1.5 or greater. The ratio of the 22nd period P22 to the 21st period P21 may be, for example, 2.0 or less, 3.0 or less, or 4.0 or less. The range of the ratio of the 22nd period P22 to the 21st period P21 may be determined by a first group consisting of 1.0, 1.1, 1.3, and 1.5, and / or a second group consisting of 2.0, 3.0, and 4.0. The range of the ratio of the 22nd period P22 to the 21st period P21 may be determined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of the 22nd period P22 to the 21st period P21 may be determined by a combination of any two values ​​from the first group. The range of the ratio of the 22nd period P22 to the 21st period P21 may be determined by any two combinations of values ​​included in the second group described above. For example, the ratio of the 22nd period P22 to the 21st period P21 may be 1.0 or more and 4.0 or less, 1.0 or more and 3.0 or less, 1.0 or more and 2.0 or less, 1.0 or more and 1.5 or less, 1.0 or more and 1.3 or less, 1.0 or more and 1.1 or less, 1.1 or more and 4.0 or less, 1.1 or more and 3.0 or less, 1.1 or more and 2.0 or less, 1.1 or more and 1.5 or less. The following are also acceptable: 1.1 to 1.3, 1.3 to 4.0, 1.3 to 3.0, 1.3 to 2.0, 1.3 to 1.5, 1.5 to 4.0, 1.5 to 3.0, 1.5 to 2.0, 2.0 to 4.0, 2.0 to 3.0, and 3.0 to 4.0. When the ratio of the 22nd period P22 to the 21st period P21 is small, the difference in pixel density between the first display area 101 and the second display area 102 becomes smaller. This suppresses the occurrence of a visual difference between the first display area 101 and the second display area 102.

[0064] The electrode line 140L may overlap with two or more organic layers 130 aligned along the second element direction G2 in a plan view.

[0065] The symbol G11 represents the spacing between two adjacent electrode lines 140L in the first direction G1 of the element. The spacing G11 is determined according to the second transmittance TR2 of the transparent region 104. The spacing G11 may also be determined based on the 11th period P11 of the organic layer 130.

[0066] The ratio of interval G11 to the 11th period P11 may be, for example, 0.3 or greater, 0.5 or greater, or 1.0 or greater. The ratio of interval G11 to the 11th period P11 may be, for example, 1.5 or less, 2.0 or less, or 3.0 or less. The range of the ratio of interval G11 to the 11th period P11 may be determined by a first group consisting of 0.3, 0.5 and 1.0, and / or a second group consisting of 1.5, 2.0 and 3.0. The range of the ratio of interval G11 to the 11th period P11 may be determined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of interval G11 to the 11th period P11 may be determined by a combination of any two values ​​from the first group. The range of the ratio of interval G11 to the 11th period P11 may be determined by a combination of any two values ​​from the second group. For example, the ratio of interval G11 to period P11 may be 0.3 or more and 3.0 or less, 0.3 or more and 2.0 or less, 0.3 or more and 1.5 or less, 0.3 or more and 1.0 or less, 0.3 or more and 0.5 or less, 0.5 or more and 3.0 or less, 0.5 or more and 2.0 or less, 0.5 or more and 1.5 or less, 0.5 or more and 1.0 or less, 1.0 or more and 3.0 or less, 1.0 or more and 2.0 or less, 1.0 or more and 1.5 or less, 1.5 or more and 3.0 or less, 1.5 or more and 2.0 or more and 3.0 or less.

[0067] The interval G11 may be, for example, 10 μm or more, 50 μm or more, 100 μm or more, or 150 μm or more. The interval G11 may be, for example, 200 μm or less, 250 μm or less, or 300 μm or less. The range of the interval G11 may be defined by a first group consisting of 10 μm, 50 μm, 100 μm and 150 μm, and / or a second group consisting of 200 μm, 250 μm and 300 μm. The range of the interval G11 may be defined by a combination of any one value from the first group and any one value from the second group. The range of the interval G11 may be defined by a combination of any two values ​​from the first group. The range of the interval G11 may be defined by a combination of any two values ​​from the second group. For example, the spacing G11 may be 10 μm or more and 300 μm or less, 10 μm or more and 250 μm or less, 10 μm or more and 200 μm or less, 10 μm or more and 150 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less, 50 μm or more and 300 μm or less, 50 μm or more and 250 μm or less, 50 μm or more and 200 μm or less, 50 μm or more and 150 μm or less, 50 μm or more and 100 It may be less than or equal to μm, or between 100 μm and 300 μm, or between 100 μm and 250 μm, or between 100 μm and 200 μm, or between 100 μm and 150 μm, or between 150 μm and 300 μm, or between 150 μm and 250 μm, or between 150 μm and 200 μm, or between 200 μm and 300 μm, or between 200 μm and 250 μm, or between 250 μm and 300 μm.

[0068] Preferably, the spacing G11 is not constant. For example, the spacing G11 may change depending on the position in the first direction G1 or the second direction G2 of the element. This suppresses the reinforcement of light diffracted when passing through the transmission region 104. Therefore, it is possible to suppress the incidence of diffracted light with high intensity on the sensor. This, for example, can suppress blurring of the image generated by the sensor.

[0069] An example of a specific configuration for changing the spacing G11 is described below. As shown in Figure 3, the electrode line 140L may include two or more electrode sections 141 aligned in the second element direction G2. The electrode sections 141 may overlap the organic layer 130 in a plan view. For example, one electrode section 141 may overlap one organic layer 130. In other words, the electrode sections 141 may be aligned in the second element direction G2 with the 22nd period P22 described above. Two adjacent electrode sections 141 in the second element direction G2 may be connected to each other.

[0070] The electrode section 141 may include a first electrode section 141A and a second electrode section 141B. For example, the electrode section 141 may consist of either the first electrode section 141A or the second electrode section 141B. The first electrode section 141A may have a first shape. The second electrode section 141B may have a second shape different from the first shape. That is, the shape of the second electrode section 141B may differ from the shape of the first electrode section 141A. Since the electrode section 141 includes a first electrode section 141A and a second electrode section 141B having different shapes from each other, it is possible to suppress the spacing G11 from being constant regardless of position.

[0071] The electrode section 141 may include a first electrode connection 144A and a second electrode connection 144B. The first electrode connection 144A means a combination of a first electrode section 141A and a second electrode section 141B connected in the second direction G2 of the element. The second electrode connection 144B means a combination of two first electrode sections 141A connected in the second direction G2 of the element.

[0072] The electrode section 141 may include a first electrode arrangement 145A and a second electrode arrangement 145B. The first electrode arrangement 145A means a combination of a first electrode section 141A and a second electrode section 141B aligned in the first direction G1 of the element. The second electrode arrangement 145B means a combination of two first electrode sections 141A aligned in the first direction G1 of the element.

[0073] The electrode section 141 may include a first electrode arrangement 145A, a second electrode arrangement 145B, and a third electrode arrangement 145C. The third electrode arrangement 145C means a combination of two second electrode sections 141B aligned in the first element direction G1.

[0074] The first electrode section 141A and the second electrode section 141B may be arranged such that the spacing G11 changes irregularly. For example, the first electrode section 141A and the second electrode section 141B may be arranged based on a Fibonacci sequence.

[0075] The Fibonacci sequence includes S0S1S2S3S4S5S6S7S8S9... n This is obtained by concatenating the previous string and the string two strings prior. That is, S n =S n-1 S n-2 n is an integer greater than or equal to 2. If S0=L and S1=LS, the Fibonacci sequence includes the following: LLSLLSLSLLSLLSLSLLSLSLLSLLSLSLLSLLSLSLLSLS… For example, the first electrode section 141A is fitted to L, and the second electrode section 141B is fitted to S. This allows the electrode section 141 to include the first electrode section 141A and the second electrode section 141B which are irregularly arranged in the second element direction G2.

[0076] The specific differences between the first shape and the second shape are arbitrary. For example, the area of ​​the second shape may differ from the area of ​​the first shape. For example, the dimensions of the second shape in the first direction G1 or the second direction G2 of the element may differ from the dimensions of the first shape in the first direction G1 or the second direction G2 of the element. For example, the position of the end of the second shape in the first direction G1 or the second direction G2 of the element may differ from the position of the end of the first shape in the first direction G1 or the second direction G2 of the element.

[0077] Specific examples of the shapes of the first electrode section 141A and the second electrode section 141B will be described with reference to Figures 4 and 5. Figure 4 is a plan view showing an example of the first electrode section 141A. Figure 5 is a plan view showing an example of the second electrode section 141B.

[0078] As shown in Figure 4, the first electrode section 141A may include a first pixel section 142A and a first connection section 143A. The first pixel section 142A may overlap the organic layer 130 in a plan view. The first connection section 143A may be connected to the first pixel section 142A. The first connection section 143A may include a first connection end 143A1 and a second connection end 143A2. The first connection end 143A1 is connected to the first pixel section 142A. The second connection end 143A2 is located on the opposite side from the first connection end 143A1 in the second element direction G2.

[0079] As shown in Figure 5, the second electrode section 141B may include a second pixel section 142B and a second connection section 143B. The second pixel section 142B may overlap the organic layer 130 in a plan view. The second connection section 143B may be connected to the second pixel section 142B. The second connection section 143B may include a third connection end 143B1 and a fourth connection end 143B2. The third connection end 143B1 is connected to the second pixel section 142B. The fourth connection end 143B2 is located on the opposite side of the third connection end 143B1 in the second element direction G2.

[0080] The shape of the first connection section 143A may differ from the shape of the second connection section 143B. For example, the area of ​​the first connection section 143A may be different from the area of ​​the second connection section 143B. In the example shown in Figures 4 and 5, the area of ​​the first connection section 143A is smaller than that of the second connection section 143B. For example, the average value of the dimension W2A of the first connection section 143A in the first element direction G1 may differ from the average value of the dimension W2B of the second connection section 143B in the first element direction G1. In the examples shown in Figures 4 and 5, the average value of dimension W2A is smaller than the average value of dimension W2B. For example, the position of the second connection end 143A2 in the first element direction G1 may be different from the position of the fourth connection end 143B2 in the first element direction G1. "Position" may mean the position relative to the organic layer 130 that overlaps with the electrode section 141 in a plan view. In the example shown in Figure 4, the position of the first connection end 143A1 in the first element direction G1 is the same as the position of the second connection end 143A2 in the first element direction G1. In the example shown in Figure 5, the position of the third connection end 143B1 in the first element direction G1 is different from the position of the fourth connection end 143B2 in the first element direction G1. As shown in Figures 4 and 5, the position of the first connection end 143A1 in the first element direction G1 is the same as the position of the third connection end 143B1 in the first element direction G1. On the other hand, the position of the second connection terminal 143A2 in the element's first direction G1 is different from the position of the fourth connection terminal 143B2 in the element's first direction G1. "The positions are the same" means that the difference in the positions of the midpoints of the two connection terminals in the element's first direction G1 is less than or equal to the 11th period P11 / 4. "The positions are different" means that the difference in the positions of the midpoints of the two connection terminals in the element's first direction G1 is greater than the 11th period P11 / 4.

[0081] The average value of the dimension W2A of the first connection section 143A in the element's first direction G1 may be smaller than the average value of the dimension W1A of the first pixel section 142A in the element's first direction G1. The ratio of the average value of dimension W2A to the average value of dimension W1A may be, for example, 0.1 or greater, 0.2 or greater, or 0.3 or greater. The ratio of the average value of dimension W2A to the average value of dimension W1A may be, for example, 0.7 or less, 0.8 or less, or 0.9 or less. The range of the ratio of the average value of dimension W2A to the average value of dimension W1A may be determined by a first group consisting of 0.1, 0.2 and 0.3, and / or a second group consisting of 0.7, 0.8 and 0.9. The range of the ratio of the average value of dimension W2A to the average value of dimension W1A may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the ratio of the average value of dimension W2A to the average value of dimension W1A may be determined by any two combinations of values ​​included in the first group described above. The range of the ratio of the average value of dimension W2A to the average value of dimension W1A may be determined by any two combinations of values ​​included in the second group described above. For example, the ratio of the average value of dimension W2A to the average value of dimension W1A may be 0.1 or more and 0.9 or less, 0.1 or more and 0.8 or less, 0.1 or more and 0.7 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, 0.2 or more and 0.9 or less, 0.2 or more and 0.8 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.9 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.7 or more and 0.9 or less, 0.7 or more and 0.8 or less, or 0.8 or more and 0.9 or less.

[0082] The dimension L2A of the first connection section 143A in the element's second direction G2 may be determined according to the dimension L1A of the first pixel section 142A in the element's second direction G2. The ratio of dimension L2A to dimension L1A may be, for example, 0.2 or more, 0.6 or more, or 0.9 or more. The ratio of dimension L2A to dimension L1A may be, for example, 2.0 or less, 2.5 or less, or 3.0 or less. The range of the ratio of dimension L2A to dimension L1A may be determined by a first group consisting of 0.2, 0.6, and 0.9, and / or a second group consisting of 2.0, 2.5, and 3.0. The range of the ratio of dimension L2A to dimension L1A may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the ratio of dimension L2A to dimension L1A may be determined by any two combinations of values ​​included in the first group described above. The range of the ratio of dimension L2A to dimension L1A may be determined by any two combinations of values ​​included in the second group described above. For example, the ratio of dimension L2A to dimension L1A may be 0.2 or more and 3.0 or less, 0.2 or more and 2.5 or less, 0.2 or more and 2.0 or less, 0.2 or more and 0.9 or less, 0.2 or more and 0.6 or less, 0.6 or more and 3.0 or less, 0.6 or more and 2.5 or less, 0.6 or more and 2.0 or less, 0.6 or more and 2.0 or less, 0.6 or more and 2.9 or less, 0.9 or more and 3.0 or less, 0.9 or more and 2.5 or less, 0.9 or more and 2.0 or less, 2.0 or more and 3.0 or less, 2.0 or more and 2.5 or less, and 2.5 or more and 3.0 or less. The ratio is, for example, the ratio of the maximum value of dimension L2A to the maximum value of dimension L1A.

[0083] The average value of the dimension W2B of the second connection section 143B in the element's first direction G1 may be smaller than the average value of the dimension W1B of the second pixel section 142B in the element's first direction G1. The range of the ratio of the average value of dimension W2B to the average value of dimension W1B can be the "range of the ratio of the average value of dimension W2A to the average value of dimension W1A" described above.

[0084] The dimension L2B of the second connection section 143B in the second element direction G2 may be determined according to the dimension L1B of the second pixel section 142B in the second element direction G2. The range of the ratio of dimension L2B to dimension L1B can be the "range of the ratio of dimension L2A to dimension L1A" described above.

[0085] The layer structure of the second electrode 140 will now be described. Figure 6 is a plan view showing an enlarged view of the region enclosed by the dashed line labeled VI in the organic device 100 of Figure 3.

[0086] The second electrode 140 may include multiple layers. For example, the second electrode 140 may include a first layer 140A, a second layer 140B, and a third layer 140C. The first layer 140A, the second layer 140B, and the third layer 140C are layers formed by a vapor deposition method using the first mask 50A, the second mask 50B, and the third mask 50C, which will be described later.

[0087] The first layer 140A may include a first main electrode 140A1 and a first sub-electrode 140A2. The area of ​​the first main electrode 140A1 may be larger than the area of ​​the first sub-electrode 140A2. The second layer 140B may include a second main electrode 140B1 and a second sub-electrode 140B2. The area of ​​the second main electrode 140B1 may be larger than the area of ​​the second sub-electrode 140B2. The third layer 140C may include a third main electrode 140C1 and a third sub-electrode 140C2. The area of ​​the third main electrode 140C1 may be larger than the area of ​​the third sub-electrode 140C2.

[0088] The first main electrode 140A1 may be connected to the second main electrode 140B1 and the third main electrode 140C1 in the second direction G2 of the element. The first main electrode 140A1 may overlap with the organic layer 130 in a plan view. For example, the first main electrode 140A1 may overlap with the second organic layer 130B, which will be described later. The first sub-electrode 140A2 may be connected to the second main electrode 140B1 or the third main electrode 140C1 in the first direction G1 of the element. The first sub-electrode 140A2 may be connected to the second sub-electrode 140B2 and the third sub-electrode 140C2 in the second direction G2 of the element. The first sub-electrode 140A2 does not have to overlap with the organic layer 130 in a plan view. Influence The first sub-electrode 140A2 may be aligned with the first main electrode 140A1 in the third element direction G3 or the fourth element direction G4.

[0089] The element's third direction G3 is a direction that intersects both the element's first direction G1 and the element's second direction G2. The angle that the element's third direction G3 makes with the element's first direction G1 and the element's second direction G2 is, for example, between 30° and 60°. The element's fourth direction G4 is a direction that intersects both the element's first direction G1 and the element's second direction G2. The angle that the element's fourth direction G4 makes with the element's first direction G1 and the element's second direction G2 is, for example, between 30° and 60°. The element's third direction G3 intersects with the element's fourth direction G4. For example, the element's third direction G3 may be perpendicular to the element's fourth direction G4.

[0090] The symbol G41 represents the distance between the first main electrode 140A1 and the first sub-electrode 140A2 in the third direction G3 or the fourth direction G4 of the element. The distance G41 may be, for example, 5 μm or more, 10 μm or more, or 15 μm or more. The distance G41 may be, for example, 30 μm or less, 35 μm or less, or 40 μm or less. The range of the distance G41 may be defined by a first group consisting of 5 μm, 10 μm and 15 μm, and / or a second group consisting of 30 μm, 35 μm and 40 μm. The range of the distance G41 may be defined by a combination of any one value from the first group and any one value from the second group. The range of the distance G41 may be defined by a combination of any two values ​​from the first group. The range of the distance G41 may be defined by a combination of any two values ​​from the second group. For example, the spacing G41 may be 5 μm or more and 40 μm or less, 5 μm or more and 35 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 35 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 35 μm or less, 15 μm or more and 30 μm or less, 30 μm or more and 40 μm or less, 30 μm or more and 35 μm or more and 40 μm or less.

[0091] The second main electrode 140B1 may be connected to the first main electrode 140A1 and the third main electrode 140C1 in the second element direction G2. The second main electrode 140B1 does not have to overlap with the organic layer 130 in a plan view. The second sub-electrode 140B2 may be connected to the first main electrode 140A1 or the third main electrode C1 in the first direction G1 of the element. The second sub-electrode 140B2 may be connected to the first sub-electrode 140A2 and the third sub-electrode 140C2 in the second direction G2 of the element. The second sub-electrode 140B2 may overlap with the organic layer 130 in a plan view. For example, the second sub-electrode 140B2 may overlap with the first organic layer 130A, which will be described later. The second sub-electrode 140B2 may be aligned with the second main electrode 140B1 in the third element direction G3 or the fourth element direction G4. The range of the spacing between the second main electrode 140B1 and the second sub-electrode 140B2 can be the range of the spacing G41 described above.

[0092] The third main electrode 140C1 may be connected to the first main electrode 140A1 and the second main electrode 140B1 in the second element direction G2. The third main electrode 140C1 does not have to overlap with the organic layer 130 in a plan view. The third sub-electrode 140C2 may be connected to the first main electrode 140A1 or the second main electrode B1 in the first direction G1 of the element. The third sub-electrode 140C2 may be connected to the first sub-electrode 140A2 and the second sub-electrode 140B2 in the second direction G2 of the element. The third sub-electrode 140C2 may overlap with the organic layer 130 in a plan view. For example, the third sub-electrode 140C2 may overlap with the third organic layer 130C, which will be described later. The third sub-electrode 140C2 may be aligned with the third main electrode 140C1 in the third element direction G3 or the fourth element direction G4. The range of the spacing G41 described above can be adopted as the spacing between the third main electrode 140C1 and the third sub-electrode 140C2.

[0093] The first electrode section 141A may include a first main electrode 140A1, a second main electrode 140B1, a third main electrode 140C1, a second sub-electrode 140B2, and a third sub-electrode 140C2. The second main electrode 140B1 may be located between the first main electrode 140A1 and the third main electrode 140C1 in the second direction G2 of the element. The second main electrode 140B1 may be connected to the first main electrode 140A1 and the third main electrode 140C1 in the second direction G2 of the element. The second sub-electrode 140B2 and the third sub-electrode 140C2 may be connected to the first main electrode 140A1 in the first direction G1 of the element. The second sub-electrode 140B2 may be connected to the third sub-electrode 140C2 in the second direction G2 of the element.

[0094] The second electrode section 141B may include a first main electrode 140A1, a second main electrode 140B1, a first sub-electrode 140A2, two second sub-electrodes 140B2, and two third sub-electrodes 140C2. The second main electrode 140B1 may be connected to the first main electrode 140A1 in the second direction G2 of the element. The first second sub-electrode 140B2 and the first third sub-electrode 140C2 may be connected to the first main electrode 140A1 in the first direction G1 of the element. The first second sub-electrode 140B2 may be connected to the first third sub-electrode 140C2 in the second direction G2 of the element. The second third sub-electrode 140C2 may be connected to the second main electrode 140B1 in the second direction G2 of the element. The second second sub-electrode 140B2 may be connected to the second third sub-electrode 140C2 in the second direction G2 of the element. The first sub-electrode 140A2 may be connected to the second sub-electrode 140B2 in the second element direction G2.

[0095] In the first display area 101, the first main electrode 140A1, the second main electrode 140B1, and the third main electrode 140C1 may be repeatedly arranged along the second element direction G2. In the first display area 101, the third sub-electrode 140C2, the second sub-electrode 140B2, and the first sub-electrode 140A2 may be repeatedly arranged along the second element direction G2. The rows of the first main electrode 140A1, the second main electrode 140B1, and the third main electrode 140C1 and the rows of the third sub-electrode 140C2, the second sub-electrode 140B2, and the first sub-electrode 140A2 may be connected in the first element direction G1.

[0096] The two layers of the second electrode 140 may partially overlap. The region in which multiple layers of the second electrode 140 overlap in a plan view is also referred to as the electrode overlap region 148. In this embodiment, the electrode overlap region 148 includes the region in which the first layer 140A and the second layer 140B overlap, the region in which the first layer 140A and the third layer 140C overlap, or the region in which the second layer 140B and the third layer 140C overlap.

[0097] The area of ​​the electrode overlap region 148 may be smaller than the area of ​​the first layer 140A. For example, the area of ​​the electrode overlap region 145 may be smaller than the area of ​​the first main electrode 140A1. The ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1 may be, for example, 0.02 or more, 0.05 or more, or 0.10 or more. The ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1 may be, for example, 0.20 or less, 0.30 or less, or 0.40 or less. The range of the ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1 may be defined by a first group consisting of 0.02, 0.05 and 0.10, and / or a second group consisting of 0.20, 0.30 and 0.40. The range of the ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1 may be determined by a combination of any one value from the first group described above and any one value from the second group described above. The range of the ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1 may be determined by a combination of any two values ​​from the first group described above. The range of the ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1 may be determined by a combination of any two values ​​from the second group described above. For example, the ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1 may be 0.02 or more and 0.40 or less, 0.02 or more and 0.30 or less, 0.02 or more and 0.20 or less, 0.02 or more and 0.10 or less, 0.02 or more and 0.05 or less, 0.05 or more and 0.40 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.20 or less, 0.05 or more and 0.10 or less, 0.10 or more and 0.40 or less, 0.10 or more and 0.30 or less, 0.20 or more and 0.40 or less, 0.20 or more and 0.30 or less, or 0.30 or more and 0.40 or less.

[0098] The area of ​​the electrode overlap region 145 may be smaller than the area of ​​the first sub-electrode 140A2. The range of the ratio of the area of ​​the electrode overlap region 145 to the area of ​​the first sub-electrode 140A2 can be the same as the range of the "ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1" described above.

[0099] The area of ​​the electrode overlap region 145 may be smaller than the area of ​​the second main electrode 140B1. The range of the ratio of the area of ​​the electrode overlap region 145 to the area of ​​the second main electrode 140B1 can be the same as the range of the "ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1" described above.

[0100] The area of ​​the electrode overlap region 145 may be smaller than the area of ​​the second sub-electrode 140B2. The range of the ratio of the area of ​​the electrode overlap region 145 to the area of ​​the second sub-electrode 140B2 can be the same as the range of the "ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1" described above.

[0101] The area of ​​the electrode overlap region 145 may be smaller than the area of ​​the third main electrode 140C1. The range of the ratio of the area of ​​the electrode overlap region 145 to the area of ​​the third main electrode 140C1 can be the same as the range of the "ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1" described above.

[0102] The area of ​​the electrode overlap region 145 may be smaller than the area of ​​the third sub-electrode 140C2. The range of the ratio of the area of ​​the electrode overlap region 145 to the area of ​​the third sub-electrode 140C2 can be the same as the range of the "ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1" described above.

[0103] Figure 7 is a plan view showing the organic device 100 of Figure 6 with the second electrode 140 removed. The organic layer 130 may include a first organic layer 130A, a second organic layer 130B, and a third organic layer 130C. The first organic layer 130A, the second organic layer 130B, and the third organic layer 130C are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer. In the following description, the term and reference numeral "organic layer 130" will be used when describing the configuration of the organic layer common to the first organic layer 130A, the second organic layer 130B, and the third organic layer 130C.

[0104] The arrangement of the second electrode 140 and the organic layer 130 in a plan view is detected by observing the organic device 100 using a high-magnification digital microscope. Based on the detection results, the occupancy rate, area, dimensions, spacing, etc., can be calculated. If the organic device 100 is equipped with a cover such as a cover glass, the cover may be removed by peeling it off or destroying it before observing the second electrode 140 and the organic layer 130. A scanning electron microscope may be used instead of a digital microscope.

[0105] Next, an example of the layer configuration of the organic device 100 will be described. Figure 8 is a cross-sectional view of the organic device in Figure 6 along line AA. Figure 9 is a cross-sectional view of the organic device in Figure 6 along line BB.

[0106] The organic device 100 comprises a substrate 110 and an element 115 located on the substrate 110. The element 115 may have a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130.

[0107] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a plan view. The insulating layer 160 may contain, for example, polyimide. The insulating layer 160 may overlap the ends of the first electrodes 120. The insulating layer 160 may overlap the electrode overlap region 148 in a plan view. For example, in a plan view, the electrode overlap region 148 may be surrounded by the contour of the insulating layer 160. The electrode overlap region 148 includes multiple layers of the second electrode 140. Therefore, the electrode overlap region 148 has a lower transmittance than a single layer of the second electrode 140. When light transmitted through the electrode overlap region 148 is emitted from the organic device 100, unevenness in light intensity may occur. By overlapping the insulating layer 160 with the electrode overlap region 148, unevenness in light intensity can be suppressed.

[0108] The organic device 100 may be an active-matrix type. For example, although not shown in the figures, the organic device 100 may include a switch. The switch is electrically connected to each of the multiple elements 115. The switch is, for example, a transistor. The switch can control the ON / OFF state of voltage or current to the corresponding element 115.

[0109] The substrate 110 may be a plate-shaped member having insulating properties. Preferably, the substrate 110 has transparency that allows light to pass through.

[0110] When the substrate 110 has a predetermined transparency, it is preferable that the transparency of the substrate 110 is such that it can transmit light from the organic layer 130 and display an image. For example, it is preferable that the transmittance of the substrate 110 in the visible light region be 70% or more, and more preferably 80% or more. The transmittance of the substrate 110 can be measured by the test method for total light transmittance of transparent plastic materials in accordance with JIS K7361-1.

[0111] The substrate 110 may or may not be flexible. The substrate 110 can be appropriately selected depending on the application of the organic device 100.

[0112] As the material for the substrate 110, for example, rigid materials that do not allow flexibility, such as quartz glass, Pyrex® glass, synthetic quartz plate, or alkali-free glass, or flexible materials that allow flexibility, such as resin film, optical resin plate, or thin glass, can be used. The substrate may also be a laminate having a barrier layer on one or both sides of a resin film.

[0113] The thickness of the substrate 110 can be appropriately selected depending on the material used for the substrate 110 and the application of the organic device 100, but for example, it may be 0.005 mm or more. Alternatively, the thickness of the substrate 110 may be 5 mm or less.

[0114] The element 115 can perform some function by applying a voltage between the first electrode 120 and the second electrode 140, or by allowing a current to flow between the first electrode 120 and the second electrode 140. For example, if the element 115 is a pixel of an organic EL display device, the element 115 can emit light that constitutes an image.

[0115] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or other conductive inorganic material. The first electrode 120 may also include a transparent and conductive metal oxide, such as indium tin oxide.

[0116] The materials that make up the first electrode 120 include metals such as Au, Cr, Mo, Ag, and Mg; inorganic oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide, and indium oxide; and conductive polymers such as metal-doped polythiophene. These conductive materials may be used individually or in combination of two or more types. When using two or more types, layers made of each material may be laminated. Alternatively, alloys containing two or more materials may be used. For example, magnesium alloys such as MgAg can be used.

[0117] The organic layer 130 contains an organic material. When an electric current is passed through the organic layer 130, the organic layer 130 can perform some function. "Electrification" means that a voltage is applied to the organic layer 130, or that an electric current flows through the organic layer 130. The organic layer 130 can be a light-emitting layer that emits light when an electric current is passed through it, or a layer whose light transmittance or refractive index changes when an electric current is passed through it. The organic layer 130 may also contain an organic semiconductor material.

[0118] The stacked structure including the first electrode 120, the first organic layer 130A, and the second electrode 140 is also referred to as the first element 115A. The stacked structure including the first electrode 120, the second organic layer 130B, and the second electrode 140 is also referred to as the second element 115B. The stacked structure including the first electrode 120, the third organic layer 130C, and the second electrode 140 is also referred to as the third element. When the organic device 100 is an organic EL display device, the first element 115A, the second element 115B, and the third element are each subpixels.

[0119] In the following explanation, the term and symbol "element 115" will be used when describing the configuration of elements common to the first element 115A, the second element 115B, and the third element.

[0120] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located between them is driven. If the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130 and extracted to the outside from either the second electrode 140 side or the first electrode 120 side.

[0121] If the organic layer 130 includes a light-emitting layer that emits light when an electric current is applied, the organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like. For example, if the first electrode 120 is the anode, the organic layer 130 may have a hole injection transport layer between the light-emitting layer and the first electrode 120. The hole injection transport layer may be a hole injection layer having a hole injection function, a hole transport layer having a hole transport function, or a layer having both hole injection and hole transport functions. Furthermore, the hole injection transport layer may be a laminate of a hole injection layer and a hole transport layer. When the second electrode 140 is the cathode, the organic layer 130 may have an electron injection transport layer between the light-emitting layer and the second electrode 140. The electron injection transport layer may be an electron injection layer having an electron injection function, an electron transport layer having an electron transport function, or a layer having both electron injection and electron transport functions. Furthermore, the electron injection transport layer may be a laminate of an electron injection layer and an electron transport layer.

[0122] The light-emitting layer contains a light-emitting material. The light-emitting layer may also contain additives that improve leveling properties.

[0123] As the luminescent material, known materials can be used, such as dye-based materials, metal complex-based materials, and polymer-based materials. Examples of dye-based materials that can be used include cyclopentadiene derivatives, tetraphenylbutadiene derivatives, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, silole derivatives, thiophene ring compounds, pyridine ring compounds, perinone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimers, pyrazolin dimers, and the like. Examples of metal complex materials include aluminum quinolinol complexes, benzoquinolinol beryllium complexes, benzoxazole zinc complexes, benzothiazole zinc complexes, azomethyl zinc complexes, porphyrin zinc complexes, eurobium complexes, etc., in which the central metal is Al, Zn, Be, or a rare earth metal such as Tb, Eu, Dy, and the ligands are oxadiazole, thiadiazole, phenylpyridine, phenylbenzimidazole, quinoline, etc. Examples of polymer materials that can be used include poly(p-phenylenevinylene) derivatives, polythiophene derivatives, poly(p-phenylene) derivatives, polysilane derivatives, polyacetylene derivatives, polyvinylcarbazole derivatives, polyfluorene derivatives, polyquinoxaline derivatives, and copolymers thereof.

[0124] The luminescent layer may contain dopants for purposes such as improving luminescence efficiency or changing the emission wavelength. Examples of dopants include perylene derivatives, coumarin derivatives, rubrene derivatives, quinacridone derivatives, squarium derivatives, porphyrin derivatives, styryl dyes, tetracene derivatives, pyrazoline derivatives, decacyclene, phenoxazone, quinoxaline derivatives, carbazole derivatives, and fluorene derivatives. Alternatively, organometallic complexes that exhibit phosphorescence and primarily contain heavy metal ions such as platinum and iridium can be used as dopants. Dopants may be used individually or in combination of two or more.

[0125] Furthermore, as luminescent materials and dopants, for example, materials described in

[0094] to

[0099] of Japanese Patent Application Publication No. 2010-272891 and

[0053] to

[0057] of International Publication No. 2012 / 132126 can also be used.

[0126] The thickness of the light-emitting layer is not particularly limited as long as it is a thickness that can provide a field for electron-hole recombination and exhibit the function of emitting light. For example, it can be 1 nm or more, or 500 nm or less.

[0127] Known materials can be used as the hole-injection transport material for the hole-injection transport layer. For example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, aminosubstituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, polythiophene derivatives, polyaniline derivatives, polypyrrole derivatives, phenylamine derivatives, anthracene derivatives, carbazole derivatives, fluorene derivatives, distylylbenzene derivatives, polyphenylenevinylene derivatives, porphyrin derivatives, styrylamine derivatives, etc. can be used. Spiro compounds, phthalocyanine compounds, metal oxides, etc. can also be given as examples. Furthermore, for example, compounds described in

[0106] of Japanese Patent Publication No. 2011-119681, International Publication No. 2012 / 018082, Japanese Patent Publication No. 2012-069963, and International Publication No. 2012 / 132126 can also be appropriately selected and used.

[0128] Furthermore, if the hole injection transport layer is a laminate of a hole injection layer and a hole transport layer, the hole injection layer may contain additive A, the hole transport layer may contain additive A, or both the hole injection layer and the hole transport layer may contain additive A. Additive A may be a low molecular weight compound or a high molecular weight compound. Specifically, fluorine compounds, ester compounds, hydrocarbon compounds, etc., can be used.

[0129] Known materials can be used as electron-injection transport materials in the electron-injection transport layer. For example, alkali metals, alkali metal alloys, alkali metal halides, alkaline earth metals, alkaline earth metal halides, alkaline earth metal oxides, alkali metal organic complexes, magnesium halides and oxides, aluminum oxide, etc. can be used. In addition, as electron-injection transport materials, for example, vasocuproin, vasophenanthroline, phenanthroline derivatives, triazole derivatives, oxadiazole derivatives, pyridine derivatives, nitro-substituted fluorene derivatives, anthraquinodimethane derivatives, diphenylquinone derivatives, thiopyrandioxide derivatives, aromatic ring tetracarboxylic anhydrides such as naphthalene and perylene, carbodiimide, fluorenylidenemethane derivatives, anthraquinodimethane derivatives, anthrone derivatives, quinoxaline derivatives, metal complexes such as quinolinol complexes, phthalocyanine compounds, distylylpyrazine derivatives, etc. can be used.

[0130] Furthermore, a metal-doped layer can be formed by doping an electron-transporting organic material with an alkali metal or alkaline earth metal, and this can be used as an electron injection transport layer. Examples of electron-transporting organic materials include vasocuproin, vasophenanthroline, phenanthroline derivatives, triazole derivatives, oxadiazole derivatives, pyridine derivatives, metal complexes such as tris(8-quinolinolato)aluminum (Alq3), and polymer derivatives thereof. In addition, Li, Cs, Ba, Sr, etc. can be used as the metal for doping.

[0131] The second electrode 140 contains a conductive material such as a metal. The second electrode 140 is formed on the organic layer 130 by a vapor deposition method using a mask, which will be described later. Platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, etc. can be used as materials to constitute the second electrode 140. These materials may be used individually or in combination of two or more types. When using two or more types, layers made of each material may be laminated. In addition, alloys containing two or more types of materials may be used. For example, magnesium alloys such as MgAg, aluminum alloys such as AlLi, AlCa, and AlMg, alloys of alkali metals and alkaline earth metals, etc. can be used.

[0132] The thickness of the second electrode 140 may be, for example, 5 nm or more, 10 nm or more, 50 nm or more, or 100 nm or more. The thickness of the second electrode 140 may be, for example, 200 nm or less, 500 nm or less, 1 μm or less, or 100 μm or less. The range of the thickness of the second electrode 140 may be defined by a first group consisting of 5 nm, 10 nm, 50 nm and 100 nm, and / or a second group consisting of 200 nm, 500 nm, 1 μm and 100 μm. The range of the thickness of the second electrode 140 may be defined by a combination of any one value included in the first group and any one value included in the second group. The range of the thickness of the second electrode 140 may be defined by a combination of any two values ​​included in the first group. The range of the thickness of the second electrode 140 may be defined by a combination of any two values ​​included in the second group. For example, the thickness of the second electrode 140 may be 5 nm to 100 μm, 5 nm to 1 μm, 5 nm to 500 nm, 5 nm to 200 nm, 5 nm to 100 nm, 5 nm to 50 nm, 5 nm to 10 nm, 10 nm to 100 μm, 10 nm to 1 μm, 10 nm to 500 nm, 10 nm to 200 nm, 10 nm to 100 nm, 10 nm to 50 nm, or 50 nm to 100 μm. , may be 50 nm or more and 1 μm or less, may be 50 nm or more and 500 nm or less, may be 50 nm or more and 200 nm or less, may be 50 nm or more and 100 nm or less, may be 100 nm or more and 100 μm or less, may be 100 nm or more and 1 μm or less, may be 100 nm or more and 500 nm or less, may be 100 nm or more and 200 nm or less, may be 200 nm or more and 100 μm or less, may be 200 nm or more and 500 nm or less, may be 500 nm or more and 100 μm or less, may be 500 nm or more and 1 μm or less, may be 1 μm or more and 100 μm or less. The thinner the electrode 140, the higher the transmittance of the electrode 140, and the higher the transmittance of the opaque region 103. Light incident on the opaque region 103 can reach the sensor in proportion to the transmittance of the opaque region 103. By increasing the transmittance of the opaque region 103, the amount of light received by the sensor can be increased.

[0133] The thickness of each component of the organic device 100, such as the thickness of the substrate 110 and the thickness of the second electrode 140, can be measured by observing a cross-sectional image of the organic device 100 using a scanning electron microscope.

[0134] Next, a method for forming the second electrode 140 of the organic device 100 described above by a vapor deposition method will be explained. Figure 10 shows a vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process in which a vapor deposition material is deposited onto the target object.

[0135] The deposition apparatus 10 may include a deposition source 6, a heater 8, and a mask device 40 inside. The deposition apparatus 10 may also include an exhaust means for creating a vacuum atmosphere inside the deposition apparatus 10. The deposition source 6 is, for example, a crucible. The deposition source 6 contains a deposition material 7, such as a conductive material. The heater 8 heats the deposition source 6 to evaporate the deposition material 7 under a vacuum atmosphere. The mask device 40 is positioned opposite the crucible 6.

[0136] As shown in Figure 10, the masking device 40 may include at least one mask 50 and a frame 41 that supports the mask 50. The frame 41 may include a first frame surface 41a and a second frame surface 41b. The mask 50 may be fixed to the first frame surface 41a. The second frame surface 41b is located on the opposite side of the first frame surface 41a. The frame 41 may also include an opening 42. The opening 42 penetrates from the first frame surface 41a to the second frame surface 41b. The mask 50 may be fixed to the frame 41 so as to cross the opening 42 in a plan view. The frame 41 may also support the mask 50 while pulling it in its planar direction. This can suppress the bending of the mask 50.

[0137] As mask 50, the first mask 50A, second mask 50B, or third mask 50C described later may be used. In the following description, when describing the mask configuration common to the first mask 50A, second mask 50B, and third mask 50C, the term and symbol "mask 50" will be used. Similarly, when describing the mask components such as through holes and shielding areas described later, when describing the content common to the first mask 50A, second mask 50B, and third mask 50C, symbols consisting only of numbers without letters, such as "53" and "54," will be used. On the other hand, when describing the content specific to each of the first mask 50A, second mask 50B, and third mask 50C, symbols with corresponding letters such as "A," "B," and "C" after the numbers may be used.

[0138] The mask 50 of the masking apparatus 40 faces the substrate 110. The substrate 110 is the object to which the deposition material 7 is deposited. The substrate 110 includes a first surface 111 and a second surface 112. The first surface 111 faces the mask 50. The mask 50 includes a plurality of through holes 53. The through holes 53 allow the deposition material 7 that has flown in from the deposition source 6 to pass through. The deposition material 7 that has passed through the through holes 53 adheres to the first surface 111 of the substrate 110. The mask 50 includes a first surface 51a and a second surface 51b. The first surface 51a faces the first surface 111. The second surface 51b is located on the opposite side of the first surface 51a. The through holes 53 penetrate from the first surface 51a to the second surface 51b.

[0139] The deposition apparatus 10 may include a substrate holder 2 for holding the substrate 110. The substrate holder 2 may be movable in the thickness direction of the substrate 110. The substrate holder 2 may be movable in the planar direction of the substrate 110. The substrate holder 2 may control the tilt of the substrate 110. For example, the substrate holder 2 may include a plurality of chucks attached to the outer edge of the substrate 110. Each chuck may be independently movable in the thickness direction or the planar direction of the substrate 110.

[0140] The deposition apparatus 10 may include a mask holder 3 for holding the mask apparatus 40. The mask holder 3 may be movable in the thickness direction of the mask 50. The mask holder 3 may be movable in the plane direction of the mask 50. For example, the mask holder 3 may include a plurality of chucks attached to the outer edge of the frame 41. Each chuck may be independently movable in the thickness direction or the plane direction of the mask 50.

[0141] The position of the mask 50 of the masking device 40 relative to the substrate 110 can be adjusted by moving at least one of the substrate holder 2 or the mask holder 3.

[0142] The deposition apparatus 10 may be equipped with a cooling plate 4. The cooling plate 4 may be positioned on the second surface 112 side of the substrate 110. The cooling plate 4 may have a flow path for circulating a coolant inside the cooling plate 4. The cooling plate 4 can suppress the temperature of the substrate 110 from rising during the deposition process.

[0143] The deposition apparatus 10 may be equipped with a magnet 5 located on the second surface 112 side. The magnet 5 may be stacked on the cooling plate 4. The magnet 5 attracts the mask 50 towards the substrate 110 by magnetic force. This reduces or eliminates the gap between the mask 50 and the substrate 110. This suppresses the occurrence of shadows during the deposition process. As a result, the dimensional accuracy and positional accuracy of the second electrode 140 can be improved. In this application, shadow refers to the phenomenon in which the deposition material 7 enters the gap between the mask 50 and the substrate 110, causing the thickness of the second electrode 140 to become uneven. Alternatively, an electrostatic chuck that utilizes electrostatic force may be used to attract the mask 50 towards the substrate 110.

[0144] Next, the mask device 40 will be described. Figure 11 is a plan view showing the mask device 40. The mask device 40 may include two or more masks 50. The masks 50 may be fixed to the frame 41, for example, by welding.

[0145] The frame 41 includes a pair of first sides 411 and a pair of second sides 412. The frame 41 may have a rectangular outline. A mask 50 may be fixed to the first sides 411 under tension. The first sides 411 may be longer than the second sides 412. The frame 41 may include an opening 42 enclosed by the pair of first sides 411 and the pair of second sides 412.

[0146] The mask 50 includes at least one cell 52. The cell 52 includes through holes 53 and shielding regions 54. The mask 50 may include two or more cells 52. When a display device such as an organic EL display device is manufactured using the mask 50, one cell 52 may correspond to the display area of ​​one organic EL display device, i.e., one screen. One cell 52 may correspond to multiple display areas. The mask 50 may include shielding regions 54 located between the cells 52. Although not shown in the figures, the mask 50 may include through holes 53 located between the cells 52.

[0147] Cell 52 may have, for example, a roughly square, or more precisely, a roughly rectangular, outline in a plan view. Each cell 52 may have contours of various shapes depending on the shape of the display area of ​​the organic EL display device. For example, each cell 52 may have a circular contour.

[0148] Figure 12 is a plan view showing an enlarged example of a mask 50. The mask 50 has a first mask direction D1 and a second mask direction D2 intersecting the first mask direction D1. The first mask direction D1 may be perpendicular to the second mask direction D2. The first mask direction D1 may correspond to the first element direction G1, and the second mask direction D2 may correspond to the second element direction G2.

[0149] The mask 50 includes through holes 53 and shielding areas 54. The through holes 53 are aligned in the first mask direction D1 and the second mask direction D2.

[0150] When the mask 50 is viewed along the normal direction of the first surface 51a, the mask 50 comprises a third mask region M3 and a fourth mask region M4. The third mask region M3 corresponds to the first display region 101 of the organic device 100. The fourth mask region M4 corresponds to the second display region 102 of the organic device 100.

[0151] In the third mask region M3, the through-holes 53 have a third aperture ratio. The third aperture ratio is calculated by dividing the total area of ​​the through-holes 53 located in the third mask region M3 by the area of ​​the third mask region M3. In the fourth mask region M4, the through-holes 53 have a fourth aperture ratio. The fourth aperture ratio is calculated by dividing the total area of ​​the through-holes 53 located in the fourth mask region M4 by the area of ​​the fourth mask region M4. The fourth aperture ratio may be smaller than the third aperture ratio.

[0152] The ratio of the fourth aperture ratio to the third aperture ratio may be, for example, 0.2 or greater, 0.3 or greater, or 0.4 or greater. The ratio of the fourth aperture ratio to the third aperture ratio may be, for example, 0.6 or less, 0.7 or less, or 0.8 or less. The range of the ratio of the fourth aperture ratio to the third aperture ratio may be determined by a first group consisting of 0.2, 0.3 and 0.4, and / or a second group consisting of 0.6, 0.7 and 0.8. The range of the ratio of the fourth aperture ratio to the third aperture ratio may be determined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of the fourth aperture ratio to the third aperture ratio may be determined by a combination of any two values ​​from the first group. The range of the ratio of the fourth aperture ratio to the third aperture ratio may be determined by a combination of any two values ​​from the second group. For example, the ratio of the fourth aperture ratio to the third aperture ratio may be 0.2 or more and 0.8 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.7 or less, 0.4 or more and 0.6 or less, 0.6 or more and 0.8 or less, 0.6 or more and 0.7 or less, or 0.7 or more and 0.8 or less.

[0153] The mask 50 may have alignment marks 50M. The alignment marks 50M are formed, for example, at the corners of the cells 52 of the mask 50. The alignment marks 50M may be used to align the mask 50 with respect to the substrate 110 in the process of forming the second electrode 140 on the substrate 110 by vapor deposition using the mask 50. The alignment marks 50M may be formed, for example, in a position that overlaps with the frame 41. When manufacturing the mask apparatus 40, the alignment marks 50M may be used to align the mask 50 with the frame 41.

[0154] In the process of forming the second electrode 140, multiple masks 50 may be used. For example, as shown in Figure 13, the mask 50 may include a first mask 50A, a second mask 50B, and a third mask 50C. The first mask 50A, the second mask 50B, and the third mask 50C may constitute different mask devices 40. The mask device 40 equipped with the first mask 50A will also be referred to as the first mask device 40A. The mask device 40 equipped with the second mask 50B will also be referred to as the second mask device 40B. The mask device 40 equipped with the third mask 50C will also be referred to as the third mask device 40C.

[0155] In the process of forming the second electrode 140, for example, the first layer 140A of the second electrode 140 is formed on the substrate 110 using the first mask device 40A in the deposition apparatus 10. Subsequently, the second layer 140B of the second electrode 140 is formed on the substrate 110 using the second mask device 40B in the deposition apparatus 10. Subsequently, the third layer 140C of the second electrode 140 is formed on the substrate 110 using the third mask device 40C in the deposition apparatus 10. In this way, in the process of forming the second electrode 140 of the organic device 100, multiple masks 50 such as the first mask 50A, the second mask 50B, and the third mask 50C are used in sequence. The group of multiple masks 50 used to form the second electrode 140 of the organic device 100 is also called a "mask group".

[0156] Figure 14 shows an example of the cross-sectional structure of the mask 50. The mask 50 has a plurality of through holes 53 formed in the metal plate 51. The through holes 53 penetrate the metal plate 51 from the first surface 51a to the second surface 51b.

[0157] The through hole 53 may include a first recess 531 and a second recess 532. The first recess 531 is located on the first surface 51a side. The second recess 532 is located on the second surface 51b side. The first recess 531 is connected to the second recess 532 in the thickness direction of the metal plate 51.

[0158] In a plan view, the dimension r2 of the second recess 532 may be larger than the dimension r1 of the first recess 531. The first recess 531 may be formed by etching or other processing of the metal plate 51 from the first surface 51a side. The second recess 532 may be formed by etching or other processing of the metal plate 51 from the second surface 51b side. The first recess 531 and the second recess 532 are connected at a connecting portion 533.

[0159] Reference numeral 534 indicates a through-hole. The opening area of ​​the through-hole 53 in a plan view is minimized at the through-hole 534. The through-hole 534 may be defined by a connecting portion 533.

[0160] In the deposition method using the mask 50, the deposition material 7 that passes through the through-hole 534 from the second surface 51b to the first surface 51a adheres to the substrate 110, thereby forming layers such as the first layer 140A, the second layer 140B, and the third layer 140C on the substrate 110. The contour of the layers formed on the substrate 110 in the in-plane direction of the substrate 110 is determined by the contour of the through-hole 534 in plan view. The contour of the through-hole 53 shown in plan views such as Figures 15 to 21, described later, is the contour of the through-hole 534. The area of ​​the through-hole 53 may be the area of ​​the through-hole 534. The dimensions of the through-hole 53 in plan view may be the dimensions r of the through-hole 534.

[0161] The area of ​​the metal plate 51 other than the through-hole 534 can shield the deposition material 7 directed toward the substrate 110. The area of ​​the metal plate 51 other than the through-hole 534 is also called the shielding area 54. In the plan views of the mask 50, such as Figures 12, 13, 15, 17, and 18, the shielding area 54 is shaded with diagonal lines. The shielding region 54 of the fourth region M4 of the mask may include a recess that does not penetrate the metal plate 51. By providing a recess in the fourth region M4 of the mask, the rigidity of the fourth region M4 of the mask can be reduced. This reduces the difference between the rigidity of the fourth region M4 of the mask and the rigidity of the third region M3 of the mask. Therefore, it is possible to suppress the formation of wrinkles in the mask 50 due to the difference in rigidity. Wrinkles tend to form, for example, when tension is applied to the mask 50.

[0162] The thickness T of the mask 50 may be, for example, 5 μm or more, 10 μm or more, 15 μm or more, or 20 μm or more. The thickness T of the mask 50 may be, for example, 25 μm or less, 30 μm or less, 50 μm or less, or 100 μm or less. The range of the thickness T of the mask 50 may be defined by a first group consisting of 5 μm, 10 μm, 15 μm and 20 μm, and / or a second group consisting of 25 μm, 30 μm, 50 μm and 100 μm. The range of the thickness T of the mask 50 may be defined by a combination of any one value included in the first group and any one value included in the second group. The range of the thickness T of the mask 50 may be defined by a combination of any two values ​​included in the first group. The range of the thickness T of the mask 50 may be defined by a combination of any two values ​​included in the second group. For example, the thickness T of the mask 50 may be 5 μm or more and 100 μm or less, 5 μm or more and 50 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, or 15 μm or more and 100 μm or less. It is also fine if it is 15 μm or more and 50 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 100 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 30 μm or less, 20 μm or more and 25 μm or less, 25 μm or more and 100 μm or less, 25 μm or more and 50 μm or less, 25 μm or more and 30 μm or less, 30 μm or more and 100 μm or less, 30 μm or more and 50 μm or less, and 50 μm or more and 100 μm or less.

[0163] A contact-type measurement method can be used to measure the thickness T of the mask 50. For this contact-type measurement method, the HEIDENHAIM-METRO "MT1271" length gauge manufactured by Heidenhaim, which is equipped with a ball bush guide plunger, can be used.

[0164] The cross-sectional shape of the through-hole 53 is not limited to the shape shown in Figure 14. Furthermore, the method for forming the through-hole 53 is not limited to etching; various methods can be employed. For example, the mask 50 may be formed by plating in such a way that the through-hole 53 is created.

[0165] As the material constituting the mask 50, for example, an iron alloy containing nickel can be used. The iron alloy may further contain cobalt in addition to nickel. For example, as the material for the mask 50, an iron alloy can be used in which the total content of nickel and cobalt is 30% by mass or more and 54% by mass or less, and the cobalt content is 0% by mass or more and 6% by mass or less. As an iron alloy containing nickel or nickel and cobalt, Invar material containing 34% by mass or more and 38% by mass or less of nickel can be used, Super Invar material containing 30% by mass or more and 34% by mass or less of nickel in addition to cobalt can be used, and low thermal expansion Fe-Ni plated alloy containing 38% by mass or more and 54% by mass or less of nickel can be used. By using such an iron alloy, the thermal expansion coefficient of the mask 50 can be lowered. For example, when a glass substrate is used as the substrate 110, the thermal expansion coefficient of the mask 50 can be made to a low value equivalent to that of the glass substrate. This makes it possible to suppress the decrease in dimensional and positional accuracy of the vapor-deposited layer formed on the substrate 110 during the vapor deposition process, which is caused by the difference in thermal expansion coefficients between the mask 50 and the substrate 110.

[0166] Next, the first mask 50A will be described in detail. Figure 15 is a plan view showing enlarged views of the third mask region M3 and the fourth mask region M4 of the first mask 50A. The first mask 50A includes a first through hole 53A and a first shielding region 54A. The first through hole 53A is aligned in the first mask direction D1 and the second mask direction D2.

[0167] In the third region M3 of the mask, the first through-holes 53A may be aligned along the first direction D1 of the mask in a 15th period P15. In the fourth region M4 of the mask, the first through-holes 53A may be aligned along the first direction D1 of the mask in a 16th period P16. The 16th period P16 may be greater than the 15th period P15.

[0168] The ratio of the 16th period P16 to the 15th period P15 may be, for example, 1.1 or greater, 1.3 or greater, or 1.5 or greater. The ratio of the 16th period P16 to the 15th period P15 may be, for example, 2.0 or less, 3.0 or less, or 4.0 or less. The range of the ratio of the 16th period P16 to the 15th period P15 may be determined by a first group consisting of 1.1, 1.3 and 1.5, and / or a second group consisting of 2.0, 3.0 and 4.0. The range of the ratio of the 16th period P16 to the 15th period P15 may be determined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of the 16th period P16 to the 15th period P15 may be determined by a combination of any two values ​​from the first group. The range of the ratio of the 16th period P16 to the 15th period P15 may be determined by any two combinations of values ​​included in the second group described above. For example, the ratio of the 16th period P16 to the 15th period P15 may be 1.1 or more and 4.0 or less, 1.1 or more and 3.0 or less, 1.1 or more and 2.0 or less, 1.1 or more and 1.5 or less, 1.1 or more and 1.3 or less, 1.3 or more and 4.0 or less, 1.3 or more and 3.0 or less, 1.3 or more and 2.0 or less, 1.3 or more and 1.5 or less, 1.5 or more and 4.0 or less, 1.5 or more and 2.0 or less, 2.0 or more and 4.0 or less, 2.0 or more and 3.0 or less, and 3.0 or more and 4.0 or less.

[0169] The symbol G15 represents the spacing between two adjacent first through-holes 53A located in the fourth mask region M4 and in the first mask direction D1. The spacing G15 may also be determined based on the 15th period P15 of the first through-hole 53A located in the third mask region M3.

[0170] The ratio of interval G15 to period P15 may be, for example, 0.3 or greater, 0.5 or greater, or 1.0 or greater. The ratio of interval G15 to period P15 may be, for example, 1.5 or less, 2.0 or less, or 3.0 or less. The range of the ratio of interval G15 to period P15 may be determined by a first group consisting of 0.3, 0.5 and 1.0, and / or a second group consisting of 1.5, 2.0 and 3.0. The range of the ratio of interval G15 to period P15 may be determined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of interval G15 to period P15 may be determined by a combination of any two values ​​from the first group. The range of the ratio of interval G15 to period P15 may be determined by a combination of any two values ​​from the second group. For example, the ratio of interval G15 to period P15 may be 0.3 or more and 3.0 or less, 0.3 or more and 2.0 or less, 0.3 or more and 1.5 or less, 0.3 or more and 1.0 or less, 0.3 or more and 0.5 or less, 0.5 or more and 3.0 or less, 0.5 or more and 2.0 or less, 0.5 or more and 1.5 or less, 0.5 or more and 1.0 or less, 1.0 or more and 3.0 or less, 1.0 or more and 2.0 or less, 1.0 or more and 1.5 or less, 1.5 or more and 3.0 or less, 1.5 or more and 2.0 or less, or 2.0 or more and 3.0 or less.

[0171] The interval G15 may be, for example, 10 μm or more, 50 μm or more, 100 μm or more, or 150 μm or more. The interval G15 may be, for example, 200 μm or less, 250 μm or less, or 300 μm or less. The range of the interval G15 may be defined by a first group consisting of 10 μm, 50 μm, 100 μm and 150 μm, and / or a second group consisting of 200 μm, 250 μm and 300 μm. The range of the interval G15 may be defined by a combination of any one value included in the first group and any one value included in the second group. The range of the interval G15 may be defined by a combination of any two values ​​included in the first group. The range of the interval G15 may be defined by a combination of any two values ​​included in the second group. For example, the spacing G15 may be 10 μm or more and 300 μm or less, 10 μm or more and 250 μm or less, 10 μm or more and 200 μm or less, 10 μm or more and 150 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less, 50 μm or more and 300 μm or less, 50 μm or more and 250 μm or less, 50 μm or more and 200 μm or less, 50 μm or more and 150 μm or less, 50 μm or more and 100 It may be less than or equal to μm, or between 100 μm and 300 μm, or between 100 μm and 250 μm, or between 100 μm and 200 μm, or between 100 μm and 150 μm, or between 150 μm and 300 μm, or between 150 μm and 250 μm, or between 150 μm and 200 μm, or between 200 μm and 300 μm, or between 200 μm and 250 μm, or between 250 μm and 300 μm.

[0172] In the third mask region M3, the first through-holes 53A may be aligned along the second mask direction D2 in a 25th period P25. In the fourth mask region M4, the first through-holes 53A may be aligned along the second mask direction D2 in a 26th period P26. The 26th period P26 may be the same as or different from the 25th period P25.

[0173] The first through-hole 53A located in the third region M3 of the mask may include a first main hole 53A1 and a first sub-hole 53A2. The area of ​​the first main hole 53A1 may be larger than or equal to the area of ​​the first sub-hole 53A2.

[0174] Figure 16 is a plan view showing an enlarged view of the first through hole 53A. The first sub-hole 53A2 may be aligned with the first main hole 53A1 in the third mask direction D3 or the fourth mask direction D4. For example, the first through hole 53A may include the first main hole 53A1, a first sub-hole 53A2 aligned with the first main hole 53A1 in the third mask direction D3, and a first sub-hole 53A2 aligned with the first main hole 53A1 in the fourth mask direction D4.

[0175] The third mask direction D3 is a direction that intersects both the first mask direction D1 and the second mask direction D2. The angle that the third mask direction D3 makes with the first mask direction D1 and the second mask direction D2 is, for example, between 20° and 70°. The fourth mask direction D4 is a direction that intersects both the first mask direction D1 and the second mask direction D2. The angle that the fourth mask direction D4 makes with the first mask direction D1 and the second mask direction D2 is, for example, between 20° and 70°. The third mask direction D3 intersects with the fourth mask direction D4. For example, the third mask direction D3 may be perpendicular to the fourth mask direction D4. The third mask direction D3 may correspond to the third element direction G3, and the fourth mask direction D4 may correspond to the fourth element direction G4.

[0176] The symbol G45 represents the spacing between the first main hole 53A1 and the first sub-hole 53A2 in the third mask direction D3 or the fourth mask direction D4. The spacing G45 may be, for example, 5 μm or more, 10 μm or more, or 15 μm or more. The spacing G45 may be, for example, 30 μm or less, 35 μm or less, or 40 μm or less. The range of the spacing G45 may be defined by a first group consisting of 5 μm, 10 μm and 15 μm, and / or a second group consisting of 30 μm, 35 μm and 40 μm. The range of the spacing G45 may be defined by a combination of any one value from the first group and any one value from the second group. The range of the spacing G45 may be defined by a combination of any two values ​​from the first group. The range of the spacing G45 may be defined by a combination of any two values ​​from the second group. For example, the spacing G45 may be 5 μm or more and 40 μm or less, 5 μm or more and 35 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 35 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 35 μm or less, 15 μm or more and 30 μm or less, 30 μm or more and 40 μm or less, 30 μm or more and 35 μm or more and 40 μm or less.

[0177] The first through-hole 53A located in the fourth region M4 of the mask may have a different shape from the first through-hole 53A located in the third region M3 of the mask. For example, the first through-hole 53A located in the fourth region M4 of the mask may include a first type through-hole 53AA or a second type through-hole 53AB. The first type through-hole 53AA includes at least one of the first main hole 53A1 or the first sub-hole 53A2. The second type through-hole 53AB also includes at least one of the first main hole 53A1 or the first sub-hole 53A2.

[0178] The number of first main holes 53A1 in the first type through hole 53AA is different from the number of first main holes 53A1 in the second type through hole 53AB. Alternatively, the number of first sub-holes 53A2 in the first type through hole 53AA is different from the number of first sub-holes 53A2 in the second type through hole 53AB. For example, the first type through hole 53AA includes one first main hole 53A1. The first type through hole 53AA does not need to include a first sub-hole 53A2. The second type through hole 53AB includes one first main hole 53A1 and one first sub-hole 53A2. The one first sub-hole 53A2 may be aligned with the first main hole 53A1 in the third mask direction D3 or the fourth mask direction D4.

[0179] The fourth region M4 of the mask may include at least two of the first arrangement of holes 53A_1, the second arrangement of holes 53A_2, and the third arrangement of holes 53A_3. The first arrangement of holes 53A_1 means a combination of first type through holes 53AA and second type through holes 53AB aligned in the first direction D1 of the mask. The second arrangement of holes 53A_2 means a combination of two first type through holes 53AA aligned in the first direction D1 of the mask. The third arrangement of holes 53A_3 means a combination of two second type through holes 53AB aligned in the first direction D1 of the mask.

[0180] The fourth region M4 of the mask may include a fourth arrangement of holes 53A_4 and a fifth arrangement of holes 53A_5. The fourth arrangement of holes 53A_4 means a combination of a first-type through hole 53AA and a second-type through hole 53AB aligned in the second direction D2 of the mask. The fifth arrangement of holes 53A_5 means a combination of two first-type through holes 53AA aligned in the second direction D2 of the mask. Although not shown in the figures, the fourth region M4 of the mask may also include a sixth arrangement of holes 53A_6. The sixth arrangement of holes 53A_6 means a combination of two second-type through holes 53AB aligned in the second direction D2 of the mask.

[0181] Referring to Figure 17, the second mask 50B will be explained. For parts of the second mask 50B that are configured similarly to the first mask 50A, redundant explanations may be omitted.

[0182] The second mask 50B includes a second through-hole 53B and a second shielding region 54B. The second through-hole 53B is aligned in the first mask direction D1 and the second mask direction D2, similar to the first through-hole 53A.

[0183] The second through-hole 53B located in the third region M3 of the mask may include a second main hole 53B1 and a second sub-hole 53B2. The area of ​​the second main hole 53B1 may be larger than or equal to the area of ​​the second sub-hole 53B2.

[0184] The second sub-hole 53B2 may be aligned with the second main hole 53B1 in the third mask direction D3 or the fourth mask direction D4. For example, the second through-hole 53B may include the second main hole 53B1, a second sub-hole 53B2 aligned with the second main hole 53B1 in the third mask direction D3, and a second sub-hole 53B2 aligned with the second main hole 53B1 in the fourth mask direction D4.

[0185] The range of the spacing between the second main hole 53B1 and the second sub-hole 53B2 in the third direction D3 or fourth direction D4 of the mask can be the range of the spacing G45 described above.

[0186] The second through-hole 53B located in the fourth region M4 of the mask may have a different shape from the second through-hole 53B located in the third region M3 of the mask. For example, the second through-hole 53B located in the fourth region M4 of the mask may include a first-type through-hole 53BA or a second-type through-hole 53BB. Similar to the first mask 50A, the first-type through-hole 53BA includes at least one of the second main hole 53B1 or the second sub-hole 53B2. The second-type through-hole 53BB also includes at least one of the second main hole 53B1 or the second sub-hole 53B2.

[0187] The number of second main holes 53B1 in a first-type through hole 53BA is different from the number of second main holes 53B1 in a second-type through hole 53BB. Alternatively, the number of second sub-holes 53B2 in a first-type through hole 53BA is different from the number of second sub-holes 53B2 in a second-type through hole 53BB. For example, a first-type through hole 53BA includes one second main hole 53B1 and one second sub-hole 53B2. The one second sub-hole 53B2 may be aligned with the second main hole 53B1 in the third mask direction D3 or the fourth mask direction D4. A second-type through hole 53BB includes one second main hole 53B1 and two second sub-holes 53B2. The two second sub-holes 53B2 may each be aligned with the second main hole 53B1 in the third mask direction D3 and the fourth mask direction D4, respectively.

[0188] The fourth region M4 of the mask may include at least two of the first arrangement of holes 53B_1, the second arrangement of holes 53B_2, and the third arrangement of holes 53B_3. The first arrangement of holes 53B_1 means a combination of a first type through hole 53BA and a second type through hole 53BB aligned in the first direction D1 of the mask. The second arrangement of holes 53B_2 means a combination of two first type through holes 53BA aligned in the first direction D1 of the mask. The third arrangement of holes 53B_3 means a combination of two second type through holes 53BB aligned in the first direction D1 of the mask.

[0189] The fourth region M4 of the mask may include a fourth arrangement of holes 53B_4 and a fifth arrangement of holes 53B_5. The fourth arrangement of holes 53B_4 means a combination of a first-type through hole 53BA and a second-type through hole 53BB aligned in the second direction D2 of the mask. The fifth arrangement of holes 53B_5 means a combination of two first-type through holes 53BA aligned in the second direction D2 of the mask. Although not shown in the figures, the fourth region M4 of the mask may also include a sixth arrangement of holes 53B_6. The sixth arrangement of holes 53B_6 means a combination of two second-type through holes 53BB aligned in the second direction D2 of the mask.

[0190] Referring to Figure 18, the third mask 50C will be described. For parts of the third mask 50C that are configured similarly to the first mask 50A, redundant explanations may be omitted.

[0191] The third mask 50C includes a third through-hole 53C and a third shielding region 54C. The third through-hole 53C, like the first through-hole 53A, is aligned in the first mask direction D1 and the second mask direction D2.

[0192] The third through-hole 53C located in the third region M3 of the mask may include a third main hole 53C1 and a third sub-hole 53C2. The third sub-hole 53C2 may be aligned with the third main hole 53C1 in the third direction D3 or the fourth direction D4 of the mask. For example, the third through-hole 53C may include a third main hole 53C1, a third sub-hole 53C2 aligned with the third main hole 53C1 in the third direction D3 of the mask, and a third sub-hole 53C2 aligned with the third main hole 53C1 in the fourth direction D4 of the mask.

[0193] The range of the spacing between the third main hole 53C1 and the third sub-hole 53C2 in the third direction D3 or fourth direction D4 of the mask can be the range of the spacing G45 described above.

[0194] The third through-hole 53C located in the fourth region M4 of the mask may have a different shape from the third through-hole 53C located in the third region M3 of the mask. For example, the third through-hole 53C located in the fourth region M4 of the mask may include a first-type through-hole 53CA or a second-type through-hole 53CB. Similar to the first mask 50A, the first-type through-hole 53CA includes at least one of the third main hole 53C1 or the third sub-hole 53C2. The second-type through-hole 53CB also includes at least one of the third main hole 53C1 or the third sub-hole 53C2.

[0195] The number of third main holes 53C1 in a first-type through hole 53CA is different from the number of third main holes 53C1 in a second-type through hole 53CB. Alternatively, the number of third sub-holes 53C2 in a first-type through hole 53CA is different from the number of third sub-holes 53C2 in a second-type through hole 53CB. For example, a first-type through hole 53CA includes one third main hole 53C1 and one third sub-hole 53C2. The one third sub-hole 53C2 may be aligned with the third main hole 53C1 in the third mask direction D3 or the fourth mask direction D4. A second-type through hole 53CB includes one third main hole 53C1 and two third sub-holes 53C2. The two third sub-holes 53C2 may each be aligned with the third main hole 53C1 in the third mask direction D3 and the fourth mask direction D4, respectively.

[0196] The fourth region M4 of the mask may include at least two of the first arrangement of holes 53C_1, the second arrangement of holes 53C_2, and the third arrangement of holes 53C_3. The first arrangement of holes 53C_1 means a combination of a first type through hole 53CA and a second type through hole 53CB aligned in the first direction D1 of the mask. The second arrangement of holes 53C_2 means a combination of two first type through holes 53CA aligned in the first direction D1 of the mask. The third arrangement of holes 53C_3 means a combination of two second type through holes 53CB aligned in the first direction D1 of the mask.

[0197] The fourth region M4 of the mask may include a fourth arrangement of holes 53C_4 and a fifth arrangement of holes 53C_5. The fourth arrangement of holes 53C_4 means a combination of a first type through hole 53CA and a second type through hole 53CB aligned in the second direction D2 of the mask. The fifth arrangement of holes 53C_5 means a combination of two first type through holes 53CA aligned in the second direction D2 of the mask. Although not shown in the figures, the fourth region M4 of the mask may also include a sixth arrangement of holes 53C_6. The sixth arrangement of holes 53C_6 means a combination of two second type through holes 53CB aligned in the second direction D2 of the mask.

[0198] In the method for measuring the shape and arrangement of through-holes 53A to 53C in each mask 50A to 50C, parallel light is incident on either the first surface 51a or the second surface 51b along the normal direction of each mask. The parallel light is emitted from the other surface. The shape of the region occupied by the emitted light is measured as the shape of the through-hole 53.

[0199] Next, the positional relationship between the first mask 50A, the second mask 50B, and the third mask 50C will be explained. Figure 19 is a plan view showing the mask laminate 55. The mask laminate 55 comprises two or more masks 50 stacked on top of each other. The mask laminate 55 shown in Figure 19 comprises the first mask 50A, the second mask 50B, and the third mask 50C stacked on top of each other.

[0200] In the mask laminate 55, the alignment marks 50M of each mask 50A to 50C may overlap. Alternatively, the masks 50A to 50C may be stacked based on the arrangement of the cells 52 of each mask 50A to 50C. Alternatively, the masks 50A to 50C may be stacked based on the arrangement of the through holes 53A to 53C and shielding areas 54A to 54C of each mask 50A to 50C. When stacking the masks 50A to 50C, tension may or may not be applied to each mask 50A to 50C.

[0201] Furthermore, a diagram showing two or more masks 50 stacked on top of each other may be obtained by superimposing the image data of each mask 50. For example, first, an imaging device is used to acquire image data relating to the contours of the through holes 53A to 53C of each mask 50A to 50C. Then, an image processing device is used to superimpose the image data of each mask 50A to 50C. This allows for the creation of a diagram like that shown in Figure 19. When acquiring the image data, tension may or may not be applied to each mask 50A to 50C. A diagram showing two or more masks 50 stacked on top of each other may also be obtained by superimposing the design drawings for manufacturing each mask 50A to 50C.

[0202] As shown in Figure 19, the mask laminate 55 includes a through-region 55A. In a plan view, the through-region 55A includes at least one of the through-holes 53A to 53C of each mask 50A to 50C. That is, in a plan view, the through-region 55A overlaps with at least one of the through-holes 53A to 53C of each mask 50A to 50C. Therefore, in the deposition process, at least one layer of the second electrode 140 is formed in the region of the substrate 110 corresponding to the through-region 55A.

[0203] The through-hole region 55A may include a hole overlap region 59. The hole overlap region 59 is a region in plan view where the through-holes 53 of two or more masks 50 overlap. That is, the hole overlap region 59 includes at least two of the through-holes 53 of two or more masks 50 included in the mask laminate 55 in plan view. In the example shown in Figure 19, the hole overlap region 59 includes, in plan view, a region where the first through-hole 53A and the second through-hole 53B overlap, a region where the first through-hole 53A and the third through-hole 53C overlap, or a region where the second through-hole 53B and the third through-hole 53C overlap. Therefore, in the deposition process, at least two layers of the second electrode 140 are formed in the region of the substrate 110 corresponding to the hole overlap region 59.

[0204] In a plan view, the mask laminate 55 comprises a first mask region M1 and a second mask region M2. The first mask region M1 corresponds to the first display region 101 of the organic device 100. The second mask region M2 corresponds to the second display region 102 of the organic device 100.

[0205] In the first mask region M1, the penetration region 55A has a first aperture ratio. The first aperture ratio is calculated by dividing the total area of ​​the penetration regions 55A located in the first mask region M1 by the area of ​​the first mask region M1. In the second mask region M2, the penetration region 55A has a second aperture ratio. The second aperture ratio is calculated by dividing the total area of ​​the penetration regions 55A located in the second mask region M2 by the area of ​​the second mask region M2. The second aperture ratio may be smaller than the first aperture ratio.

[0206] The ratio of the second aperture ratio to the first aperture ratio may be, for example, 0.2 or greater, 0.3 or greater, or 0.4 or greater. The ratio of the second aperture ratio to the first aperture ratio may be, for example, 0.6 or less, 0.7 or less, or 0.8 or less. The range of the ratio of the second aperture ratio to the first aperture ratio may be determined by a first group consisting of 0.2, 0.3 and 0.4, and / or a second group consisting of 0.6, 0.7 and 0.8. The range of the ratio of the second aperture ratio to the first aperture ratio may be determined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of the second aperture ratio to the first aperture ratio may be determined by a combination of any two values ​​from the first group. The range of the ratio of the second aperture ratio to the first aperture ratio may be determined by a combination of any two values ​​from the second group. For example, the ratio of the second aperture ratio to the first aperture ratio may be 0.2 or more and 0.8 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.7 or less, 0.4 or more and 0.6 or less, 0.6 or more and 0.8 or less, 0.6 or more and 0.7 or less, or 0.7 or more and 0.8 or less.

[0207] The area of ​​the overlapping hole region 59 may be smaller than the area of ​​the first through hole 53A. For example, the area of ​​the overlapping hole region 59 may be smaller than the area of ​​the first main hole 53A1. The ratio of the area of ​​the overlapping hole region 59 to the area of ​​the first main hole 53A1 may be, for example, 0.02 or more, 0.05 or more, or 0.10 or more. The ratio of the area of ​​the overlapping hole region 59 to the area of ​​the first main hole 53A1 may be, for example, 0.20 or less, 0.30 or less, or 0.40 or less. The range of the ratio of the area of ​​the overlapping hole region 59 to the area of ​​the first main hole 53A1 may be defined by a first group consisting of 0.02, 0.05 and 0.10, and / or a second group consisting of 0.20, 0.30 and 0.40. The range of the ratio of the area of ​​the hole overlap region 59 to the area of ​​the first main hole 53A1 may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the ratio of the area of ​​the hole overlap region 59 to the area of ​​the first main hole 53A1 may be determined by a combination of any two of the values ​​included in the first group described above. The range of the ratio of the area of ​​the hole overlap region 59 to the area of ​​the first main hole 53A1 may be determined by a combination of any two of the values ​​included in the second group described above. For example, the ratio of the area of ​​the hole overlap region 59 to the area of ​​the first main hole 53A1 may be 0.02 or more and 0.40 or less, 0.02 or more and 0.30 or less, 0.02 or more and 0.20 or less, 0.02 or more and 0.10 or less, 0.02 or more and 0.05 or less, 0.05 or more and 0.40 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.20 or less, 0.05 or more and 0.10 or less, 0.10 or more and 0.40 or less, 0.10 or more and 0.30 or less, 0.20 or more and 0.40 or less, 0.20 or more and 0.30 or less, or 0.30 or more and 0.40 or less.

[0208] The area of ​​the overlapping hole region 59 may be smaller than the area of ​​the first sub-hole 53A2. The range of the ratio of the area of ​​the overlapping hole region 59 to the area of ​​the first sub-hole 53A2 can be the range of the "ratio of the area of ​​the overlapping hole region 59 to the area of ​​the first main hole 53A1" described above.

[0209] The area of ​​the overlapping hole region 59 may be smaller than the area of ​​the second main hole 53B1. The range of the ratio of the area of ​​the overlapping hole region 59 to the area of ​​the second main hole 53B1 can be the same as the range of the "ratio of the area of ​​the overlapping hole region 59 to the area of ​​the first main hole 53A1" described above.

[0210] The area of ​​the overlapping hole region 59 may be smaller than the area of ​​the second sub-hole 53B2. The range of the ratio of the area of ​​the overlapping hole region 59 to the area of ​​the second sub-hole 53B2 can be the range of the "ratio of the area of ​​the overlapping hole region 59 to the area of ​​the first main hole 53A1" as described above.

[0211] The area of ​​the overlapping hole region 59 may be smaller than the area of ​​the third main hole 53C1. The range of the ratio of the area of ​​the overlapping hole region 59 to the area of ​​the third main hole 53C1 can be the range of the "ratio of the area of ​​the overlapping hole region 59 to the area of ​​the first main hole 53A1" described above.

[0212] The area of ​​the overlapping hole region 59 may be smaller than the area of ​​the third sub-hole 53C2. The range of the ratio of the area of ​​the overlapping hole region 59 to the area of ​​the third sub-hole 53C2 can be the range of the "ratio of the area of ​​the overlapping hole region 59 to the area of ​​the first main hole 53A1" as described above.

[0213] As shown in Figure 19, the through-region 55A located in the second mask region M2 may include two or more through-lines 55L aligned in the first mask direction D1. The through-lines 55L may extend in the second mask direction D2. For example, the through-lines 55L may include a third end and a fourth end connected to the through-region 55A of the first mask region M1. The fourth end is located on the opposite side from the third end in the second mask direction D2.

[0214] The symbol G17 represents the spacing between two adjacent through lines 55L in the first mask direction D1. The symbol W17 represents the maximum dimension of the through line 55L in the first mask direction D1. The spacing G17 may be determined based on dimension W17.

[0215] The ratio of the spacing G17 to the dimension W17 may be, for example, 0.2 or greater, 0.4 or greater, or 0.6 or greater. The ratio of the spacing G17 to the dimension W17 may be, for example, 1.0 or less, 2.0 or less, or 3.0 or less. The range of the ratio of the spacing G17 to the dimension W17 may be defined by a first group consisting of 0.2, 0.4, and 0.6, and / or a second group consisting of 1.0, 2.0, and 3.0. The range of the ratio of the spacing G17 to the dimension W17 may be defined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of the spacing G17 to the dimension W17 may be defined by a combination of any two values ​​from the first group. The range of the ratio of the spacing G17 to the dimension W17 may be defined by a combination of any two values ​​from the second group. For example, the ratio of the spacing G17 to the dimension W17 may be 0.2 or more and 3.0 or less, 0.2 or more and 2.0 or less, 0.2 or more and 1.0 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.4 or less, 0.4 or more and 3.0 or less, 0.4 or more and 2.0 or less, 0.4 or more and 1.0 or less, 0.4 or more and 0.6 or less, 0.6 or more and 3.0 or less, 0.6 or more and 2.0 or less, 0.6 or more and 1.0 or less, 1.0 or more and 3.0 or less, 1.0 or more and 2.0 or less, or 2.0 or more and 3.0 or less.

[0216] The interval G17 may be, for example, 10 μm or more, 50 μm or more, 100 μm or more, or 150 μm or more. The interval G17 may be, for example, 200 μm or less, 250 μm or less, or 300 μm or less. The range of the interval G17 may be defined by a first group consisting of 10 μm, 50 μm, 100 μm and 150 μm, and / or a second group consisting of 200 μm, 250 μm and 300 μm. The range of the interval G17 may be defined by a combination of any one value included in the first group and any one value included in the second group. The range of the interval G17 may be defined by a combination of any two values ​​included in the first group. The range of the interval G17 may be defined by a combination of any two values ​​included in the second group. For example, the spacing G17 may be 10 μm or more and 300 μm or less, 10 μm or more and 250 μm or less, 10 μm or more and 200 μm or less, 10 μm or more and 150 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less, 50 μm or more and 300 μm or less, 50 μm or more and 250 μm or less, 50 μm or more and 200 μm or less, 50 μm or more and 150 μm or less, 50 μm or more and 100 It may be less than or equal to μm, or between 100 μm and 300 μm, or between 100 μm and 250 μm, or between 100 μm and 200 μm, or between 100 μm and 150 μm, or between 150 μm and 300 μm, or between 150 μm and 250 μm, or between 150 μm and 200 μm, or between 200 μm and 300 μm, or between 200 μm and 250 μm, or between 250 μm and 300 μm.

[0217] Preferably, the spacing G17 is not constant. For example, the spacing G17 may change depending on the position in the first mask direction D1 or the second mask direction D2. This allows the spacing G11 between the two electrode lines 140L of the organic device 100 to be varied depending on the position.

[0218] As shown in Figure 19, the through-line 55L may include two or more through-sections 56 aligned in the second mask direction D2. The through-sections 56 may overlap the organic layer 130 during the deposition process. For example, one through-section 56 may overlap one organic layer 130. Two adjacent through-sections 56 in the second mask direction D2 may be connected to each other.

[0219] The through section 56 may include a first through section 56A and a second through section 56B. The first through section 56A may have a first shape. The second through section 56B may have a second shape different from the first shape. That is, the shape of the second through section 56B may be different from the shape of the first through section 56A. Since the through section 56 includes a first through section 56A and a second through section 56B having different shapes from each other, it is possible to suppress the spacing G17 from being constant regardless of position. The shape of the through section 56 is also referred to as the through shape.

[0220] The through section 56 may include a first mask connection 562A and a second mask connection 562B. The first mask connection 562A means a combination of a first through section 56A and a second through section 56B connected in the second mask direction D2. The second mask connection 562B means a combination of two first through sections 56A connected in the second mask direction D2.

[0221] The through section 56 may include a first mask arrangement 561A and a second mask arrangement 561B. The first mask arrangement 561A means a combination of a first through section 56A and a second through section 56B aligned in the first mask direction D1. The second mask arrangement 561B means a combination of two first through sections 56A aligned in the first mask direction D1.

[0222] The through section 56 may include a first mask arrangement 561A, a second mask arrangement 561B, and a third mask arrangement 561C. The third mask arrangement 561C means a combination of two second through sections 56B aligned in the first mask direction D1.

[0223] The first through section 56A and the second through section 56B may be arranged such that the interval G17 changes irregularly. For example, the first through section 56A and the second through section 56B may be arranged based on a Fibonacci sequence.

[0224] The specific differences between the first through-shape and the second through-shape are arbitrary. For example, the area of ​​the second through-shape may differ from the area of ​​the first through-shape. For example, the dimensions of the second through-shape in the first mask direction D1 or the second mask direction D2 may differ from the dimensions of the first through-shape in the first mask direction D1 or the second mask direction D2. For example, the position of the end of the second through-shape in the first mask direction D1 or the second mask direction D2 may differ from the position of the end of the first through-shape in the first mask direction D1 or the second mask direction D2.

[0225] Specific examples of the shapes of the first through-section 56A and the second through-section 56B will be described with reference to Figures 20 and 21. Figure 20 is a plan view showing an example of the first through-section 56A. Figure 21 is a plan view showing an example of the second through-section 56B. The first electrode section 141A shown in Figure 4 may be formed by the vapor-deposited material that has passed through the first through-section 56A. The second electrode section 141B shown in Figure 5 may be formed by the vapor-deposited material that has passed through the second through-section 56B.

[0226] As shown in Figure 20, the first through section 56A may include a first main section 57A and a first subsection 58A. The first main section 57A may overlap the organic layer 130 in a plan view during the deposition process. The first subsection 58A may be connected to the first main section 57A. The first subsection 58A may include a fifth connection end 58A1 and a sixth connection end 58A2. The fifth connection end 58A1 is connected to the first main section 57A. The sixth connection end 58A2 is located on the opposite side of the fifth connection end 58A1 in the second mask direction D2.

[0227] As shown in Figure 21, the second through section 56B may include a second main section 57B and a second subsection 58B. The second main section 57B may overlap the organic layer 130 in a plan view during the deposition process. The second subsection 58B may be connected to the second main section 57B. The second subsection 58B may include a seventh connection end 58B1 and an eighth connection end 58B2. The seventh connection end 58B1 is connected to the second main section 57B. The eighth connection end 58B2 is located on the opposite side of the seventh connection end 58B1 in the second mask direction D2.

[0228] The shape of the first subsection 58A may differ from the shape of the second subsection 58B. For example, the area of ​​the first subsection 58A may be different from the area of ​​the second subsection 58B. In the example shown in Figures 20 and 21, the area of ​​the first subsection 58A is smaller than that of the second subsection 58B. For example, the average value of dimension W4A of the first subsection 58A in the first direction D1 of the mask may differ from the average value of dimension W4B of the second connecting section 143B in the first direction D1 of the mask. In the examples shown in Figures 20 and 21, the average value of dimension W4A is smaller than the average value of dimension W4B. For example, the position of the sixth connection end 58A2 in the first mask direction D1 may be different from the position of the eighth connection end 58B2 in the first mask direction D1. "Position" may mean the position relative to the organic layer 130 that overlaps with the through section 56 during the deposition process. In the example shown in Figure 20, the position of the fifth connection end 58A1 in the first mask direction D1 is the same as the position of the sixth connection end 58A2 in the first mask direction D1. In the example shown in Figure 21, the position of the seventh connection end 58B1 in the first mask direction D1 is different from the position of the eighth connection end 58B2 in the first mask direction D1. As shown in Figures 20 and 21, the position of the fifth connection end 58A1 in the first mask direction D1 is the same as the position of the seventh connection end 58B1 in the first mask direction D1. On the other hand, the position of the sixth connection end 58A2 in the first mask direction D1 is different from the position of the eighth connection end 58B2 in the first mask direction D1. "Same position" means that the difference in the position of the midpoint of the two connection ends in the first mask direction D1 is less than or equal to the dimension W17 / 4. "Different position" means that the difference in the position of the midpoint of the two connection ends in the first element direction G1 is greater than the dimension W17 / 4.

[0229] The average value of dimension W4A of the first subsection 58A in the first direction D1 of the mask may be smaller than the average value of dimension W3A of the first main section 57A in the first direction D1 of the mask. The ratio of the average value of dimension W4A to the average value of dimension W3A may be, for example, 0.1 or greater, 0.2 or greater, or 0.3 or greater. The ratio of the average value of dimension W4A to the average value of dimension W3A may be, for example, 0.7 or less, 0.8 or less, or 0.9 or less. The range of the ratio of the average value of dimension W4A to the average value of dimension W3A may be determined by a first group consisting of 0.1, 0.2 and 0.3, and / or a second group consisting of 0.7, 0.8 and 0.9. The range of the ratio of the average value of dimension W4A to the average value of dimension W3A may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the ratio of the average value of dimension W4A to the average value of dimension W3A may be determined by any two combinations of values ​​included in the first group described above. The range of the ratio of the average value of dimension W4A to the average value of dimension W3A may be determined by any two combinations of values ​​included in the second group described above. For example, the ratio of the average value of dimension W4A to the average value of dimension W3A may be 0.1 or more and 0.9 or less, 0.1 or more and 0.8 or less, 0.1 or more and 0.7 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, 0.2 or more and 0.9 or less, 0.2 or more and 0.8 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.9 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.7 or more and 0.9 or less, 0.7 or more and 0.8 or less, and 0.8 or more and 0.9 or less.

[0230] The dimension L4A of the first subsection 58A in the second mask direction D2 may be determined in accordance with the dimension L3A of the first main section 57A in the second mask direction D2. The ratio of dimension L4A to dimension L3A may be, for example, 0.2 or greater, 0.6 or greater, or 0.9 or greater. The ratio of dimension L4A to dimension L3A may be, for example, 2.0 or less, 2.5 or less, or 3.0 or less. The range of the ratio of dimension L4A to dimension L3A may be determined by a first group consisting of 0.2, 0.6 and 0.9, and / or a second group consisting of 2.0, 2.5 and 3.0. The range of the ratio of dimension L4A to dimension L3A may be determined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of dimension L4A to dimension L3A may be determined by a combination of any two values ​​from the first group. The range of the ratio of dimension L4A to dimension L3A may be determined by any two combinations of values ​​included in the second group described above. For example, the ratio of dimension L4A to dimension L3A may be 0.2 or more and 3.0 or less, 0.2 or more and 2.5 or less, 0.2 or more and 2.0 or less, 0.2 or more and 0.9 or less, 0.2 or more and 0.6 or less, 0.6 or more and 3.0 or less, 0.6 or more and 2.5 or less, 0.6 or more and 2.0 or less, 0.6 or more and 2.0 or less, 0.6 or more and 2.0 or less, 0.6 or more and 2.9 or less, 0.9 or more and 3.0 or less, 0.9 or more and 2.9 or less, 0.9 or more and 2.5 or less, 0.9 or more and 2.5 or less, 2.0 or more and 3.0 or less, 2.0 or more and 2.5 or less. The ratio is, for example, the ratio of the maximum value of dimension L4A to the maximum value of dimension L3A.

[0231] The average value of dimension W4B of the second subsection 58B in the first direction D1 of the mask may be smaller than the average value of dimension W3B of the second main section 57B in the first direction D1 of the mask. The range of the ratio of the average value of dimension W4B to the average value of dimension W3B can be the same as the "range of the ratio of the average value of dimension W4A to the average value of dimension W3A" described above.

[0232] The dimension L4B of the second subsection 58B in the second direction D2 of the mask may be determined in accordance with the dimension L3B of the second main section 57B in the second direction D2 of the mask. The range of the ratio of dimension L4B to dimension L3B can be the "range of the ratio of dimension L4A to dimension L3A" described above.

[0233] As shown in Figure 20, the first through section 56A may include a first main hole 53A1, a second main hole 53B1, a third main hole 53C1, a second sub-hole 53B2, and a third sub-hole 53C2. The second main hole 53B1 may be located between the first main hole 53A1 and the third main hole 53C1 in the second mask direction D2. The second main hole 53B1 may be connected to the first main hole 53A1 and the third main hole 53C1 in the second mask direction D2. The second sub-hole 53B2 and the third sub-hole 53C2 may be connected to the first main hole 53A1 in the first mask direction D1. The second sub-hole 53B2 may be connected to the third sub-hole 53C2 in the second mask direction D2.

[0234] The second through section 56B may include a first main hole 53A1, a second main hole 53B1, a first sub-hole 53A2, two second sub-holes 53B2, and two third sub-holes 53C2. The second main hole 53B1 may be connected to the first main hole 53A1 in the second mask direction D2. The first second sub-hole 53B2 and the first third sub-hole 53C2 may be connected to the first main hole 53A1 in the first mask direction D1. The first second sub-hole 53B2 may be connected to the first third sub-hole 53C2 in the second mask direction D2. The second third sub-hole 53C2 may be connected to the second main hole 53B1 in the first mask direction D1. The second second sub-hole 53B2 may be connected to the second third sub-hole 53C2 in the second mask direction D2. The first sub-hole 53A2 may be connected to the second sub-hole 53B2 in the second mask direction D2.

[0235] In the mask first region M1, the first main holes 53A1, the second main holes 53B1, and the third main holes 53C1 may be repeatedly arranged along the mask second direction D2. In the first display region 101, the third sub-holes 53C2, the second sub-holes 53B2, and the first sub-holes 53A2 may be repeatedly arranged along the mask second direction D2. The columns of the first main holes 53A1, the second main holes 53B1, and the third main holes 53C1 and the columns of the third sub-holes 53C2, the second sub-holes 53B2, and the first sub-holes 53A2 may be connected in the mask first direction D1.

[0236] Next, an example of a method for manufacturing the organic device 100 will be described.

[0237] First, a substrate 110 on which a first electrode 120 is formed is prepared. The first electrode 120 is formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 110 by a sputtering method or the like and then patterning the conductive layer by a photolithography method or the like. An insulating layer 160 may be formed on the substrate 110 between two adjacent first electrodes 120 in plan view.

[0238] Subsequently, as shown in FIG. 7, an organic layer 130 including a first organic layer 130A, a second organic layer 130B, and a third organic layer 130C is formed on the first electrode 120. The first organic layer 130A may be formed, for example, by a vapor deposition method using a mask having a through hole corresponding to the first organic layer 130A. For example, the first organic layer 130A can be formed by vapor depositing an organic material or the like on the first electrode 120 corresponding to the first organic layer 130A through the mask. The second organic layer 130B may also be formed by a vapor deposition method using a mask having a through hole corresponding to the second organic layer 130B. The third organic layer 130C may also be formed by a vapor deposition method using a mask having a through hole corresponding to the third organic layer 130C.

[0239] Subsequently, a second electrode formation process may be performed. In the second electrode formation process, a second electrode 140 is formed on the organic layer 130 using the above-described mask group. First, a process of forming a first layer 140A of the second electrode 140 by a vapor deposition method using the first mask 50A may be performed. For example, a conductive material such as a metal is vapor-deposited on the organic layer 130 or the like through the first mask 50A. Thereby, the first layer 140A can be formed. Subsequently, a process of forming a second layer 140B of the second electrode 140 by a vapor deposition method using the second mask 50B may be performed. For example, a conductive material such as a metal is vapor-deposited on the organic layer 130 or the like through the second mask 50B. Thereby, the second layer 140B can be formed. Subsequently, a process of forming a third layer 140C of the second electrode 140 by a vapor deposition method using the third mask 50C may be performed. For example, a conductive material such as a metal is vapor-deposited on the organic layer 130 or the like through the third mask 50C. Thereby, the third layer 140C can be formed. In this way, as shown in FIG. 6, the second electrode 140 including the first layer 140A, the second layer 140B, and the third layer 140C can be formed.

[0240] Note that the order of forming the first layer 140A, the second layer 140B, and the third layer 140C is not particularly limited. For example, the vapor deposition process may be performed in the order of the third layer 140C, the second layer 140B, and the first layer 140A.

[0241] The effects of the embodiments of the present disclosure will be summarized.

[0242] When the second display region 102 of the organic device 100 includes the transmission region 104, the light that has reached the organic device 100 can pass through the transmission region 104 and reach an optical component or the like on the back side of the substrate. Therefore, the second display region 102 can detect light and display an image. For this reason, the functions of sensors such as a camera and a fingerprint sensor can be realized in the second display region 102.

[0243] If the distance G11 between the two electrode lines 140L is not constant, it is possible to suppress the reinforcement of light diffracted when passing through the transmission region 104. Therefore, it is possible to suppress the incidence of diffracted light with high intensity on the sensor. This makes it possible to suppress blurring of the image generated by the sensor, for example.

[0244] Figure 22 is an enlarged plan view showing an example of a second display area 102 relating to a reference embodiment. In the example shown in Figure 22, the distance G11 between the two electrode lines 140L is constant. In this case, the light diffracted when passing through the transmission area 104 may reinforce each other in a specific direction. As a result, the image generated by the sensor provided in the second display area 102 may become blurred.

[0245] In contrast, as shown in the example in Figure 3 above, since the spacing G11 is not constant, it is possible to suppress the reinforcement of light diffracted when passing through the transmission region 104. Therefore, it is possible to suppress the incidence of diffracted light with high intensity on the sensor. This makes it possible to suppress blurring of the image generated by the sensor, for example.

[0246] It is possible to make various modifications to the embodiment described above. Other embodiments will be described below, with reference to the drawings as needed. In the following description and the drawings used therein, parts that can be configured in the same way as the embodiment described above will be given the same reference numerals as those used for the corresponding parts in the embodiment described above, and redundant explanations will be omitted. In addition, if it is clear that the effects and advantages obtained in the embodiment described above can also be obtained in other embodiments, the explanation may be omitted.

[0247] Figure 23 is a plan view showing an example of the first electrode section 141A. Figure 24 is a plan view showing an example of the second electrode section 141B. As shown in Figures 23 and 24, the shape of the first pixel section 142A may differ from the shape of the second pixel section 142B. For example, the area of ​​the first pixel section 142A may be different from the area of ​​the second pixel section 142B. For example, the average value of the dimension W1A of the first pixel section 142A in the first element direction G1 may differ from the average value of the dimension W1B of the second pixel section 142B in the first element direction G1.

[0248] Figure 25 is a plan view showing an example of the first through-section 56A. Figure 26 is a plan view showing an example of the second through-section 56B. The first electrode section 141A shown in Figure 23 may be formed by the deposition material that has passed through the first through-section 56A. The second electrode section 141B shown in Figure 24 may be formed by the deposition material that has passed through the second through-section 56B.

[0249] As shown in Figures 25 and 26, the shape of the first main section 57A may differ from the shape of the second main section 57B. For example, the area of ​​the first main section 57A may be different from the area of ​​the second main section 57B. For example, the average value of the dimension W3A of the first main section 57A in the first direction D1 of the mask may be different from the average value of the dimension W3B of the second main section 57B in the first direction D1 of the mask.

[0250] In the examples shown in Figures 23 to 26, the distance G11 between the two electrode lines 140L can be changed according to the position. This suppresses the reinforcement of light diffracted when passing through the transmission region 104. Consequently, it is possible to suppress the incidence of diffracted light with high intensity on the sensor. This, for example, can suppress blurring of the image generated by the sensor.

[0251] Figure 27 is a plan view showing an example of an electrode line 140L in the second display area 102. The electrode section 141 of the electrode line 140L may have three or more shapes. For example, the electrode section 141 may include a third electrode section 141C in addition to the first electrode section 141A and the second electrode section 141B. The shape of the third electrode section 141C is different from the shape of the first electrode section 141A and also different from the shape of the second electrode section 141B. In this case, the through section 56 may include a third through section in addition to the first through section 56A and the second through section 56B. The third through section corresponds to the third electrode section 141C. The third through section has a third through shape that is different from the first through shape and the second through shape.

[0252] The electrode section 141 may include a fourth electrode section 141D. The shape of the fourth electrode section 141D is different from the shape of the first electrode section 141A, the shape of the second electrode section 141B, and the shape of the third electrode section 141C. In this case, the through section 56 may include a fourth through section in addition to the first through section 56A, the second through section 56B, and the third through section. The fourth through section corresponds to the fourth electrode section 141D. The fourth through section has a fourth through shape that is different from the first through shape, the second through shape, and the third through shape.

[0253] In the example shown in Figure 27, the electrode section 141 includes the first electrode section 141A to the 16th electrode section 141P. The shapes of the first electrode section 141A to the 16th electrode section 141P may differ from each other.

[0254] Referring to Figures 28 to 31, an example of forming the second electrode 140 using two masks 50 will be explained. Figure 28 is a plan view showing an example of the first mask 50A. Figure 29 is a plan view showing an example of the second mask 50B.

[0255] As shown in Figure 28, the third mask region M3 and the fourth mask region M4 of the first mask 50A may include two or more first through-holes 53A aligned in the first mask direction D1. The first through-holes 53A may extend in the second mask direction D2.

[0256] As shown in Figure 29, the third mask region M3 of the second mask 50B may include two or more second through-holes 53B aligned in the first mask direction D1. The second through-holes 53B may extend in the second mask direction D2. The fourth mask region M4 of the second mask 50B may not include the second through-holes 53B.

[0257] Although not shown in the figures, in a mask laminate 55 comprising a first mask 50A and a second mask 50B, the second through-hole 53B may be located between two first through-holes 53A aligned in the first mask direction D1. In the mask laminate 55, the second through-hole 53B may be connected to the two first through-holes 53A.

[0258] Figure 30 is a plan view showing an example of the third mask region M3 and the fourth mask region M4 of the first mask 50A. If the fourth mask region M4 of the second mask 50B does not include the second through-hole 53B, the first through-hole 53A of the fourth mask region M4 of the first mask 50A constitutes a through-section 56. The fourth mask region M4 may include two or more through-sections 56 aligned in the second mask direction D2. For example, the fourth mask region M4 may include a first through-section 56A, a second through-section 56B, a third through-section 56C, and a fourth through-section 56D. This allows the width of the first through-hole 53A in the first mask direction D1 to be varied according to its position. Two through-sections 56 aligned in the second mask direction D2 may be connected in the second mask direction D2. In the third mask region M3, the dimensions of the first through-hole 53A in the first mask direction D1 may be constant.

[0259] FIG. 31 is a plan view showing an example of a mask third region M3 and a mask fourth region M4 of the second mask 50B. The mask fourth region M4 may not include the second through hole 53B. In the mask third region M3, the dimension of the second through hole 53B in the mask first direction D1 may be constant.

[0260] By forming the second electrode 140 using the first mask 50A and the second mask 50B shown in FIGS. 28 to 31, the interval G11 between the two electrode lines 140L can be changed according to the position. Therefore, it is possible to suppress the light diffracted when passing through the transmission region 104 from enhancing each other. Accordingly, it is possible to suppress high-intensity diffracted light from entering the sensor. Thereby, for example, it is possible to suppress the image generated by the sensor from being blurred.

[0261] Referring to FIGS. 32 to 33, an example of forming the second electrode 140 using two masks 50 will be described. FIG. 32 is a plan view showing an example of the first mask 50A. FIG. 33 is a plan view showing an example of the second mask 50B.

[0262] As shown in FIG. 32, the mask third region M3 of the first mask 50A may include a plurality of first through holes 53A. The arrangement of the first through holes 53A may be a staggered arrangement. For example, the line connecting the center points of the first through holes 53A may be zigzag. As shown in FIG. 33, the mask third region M3 of the second mask 50B may include a plurality of second through holes 53B. The arrangement of the second through holes 53B may be a staggered arrangement similar to that of the first through holes 53A. For example, the line connecting the center points of the second through holes 53B may be zigzag.

[0263] Although not shown in the figures, in a mask laminate 55 comprising a first mask 50A and a second mask 50B, the second through-hole 53B of the third mask region M3 may be located between two first through-holes 53A aligned in the first mask direction D1. Alternatively, the second through-hole 53B of the third mask region M3 may be located between two first through-holes 53A aligned in the second mask direction D2. In the mask laminate 55, one second through-hole 53B may be connected to four first through-holes 53A.

[0264] As shown in Figure 32, the fourth mask region M4 of the first mask 50A may include two or more types of first through-holes 53A aligned in the second mask direction D2. This allows the width of the first through-holes 53A in the first mask direction D1 to be varied according to position. Similarly, as shown in Figure 33, the fourth mask region M4 of the second mask 50B may include two or more types of second through-holes 53B aligned in the second mask direction D2. This allows the width of the second through-holes 53B in the first mask direction D1 to be varied according to position.

[0265] Although not shown in the figures, in a mask laminate 55 comprising a first mask 50A and a second mask 50B, the second through-hole 53B of the fourth mask region M4 may be located between two first through-holes 53A aligned in the second mask direction D2. In the mask laminate 55, the second through-hole 53B may be connected to the two first through-holes 53A.

[0266] Referring to Figures 34 to 37, an example of forming the second electrode 140 using three masks 50 will be described. Figure 34 is a plan view showing an example of the first mask 50A. Figure 35 is a plan view showing an example of the second mask 50B. Figure 36 is a plan view showing an example of the third mask 50C. Figure 37 is a plan view showing an example of the second electrode 140. The second electrode 140 includes a first layer 140A, a second layer 140B, and a third layer 140C.

[0267] As shown in Figure 34, the fourth mask region M4 of the first mask 50A includes a plurality of first through holes 53A irregularly arranged in the second mask direction D2. As shown in Figure 35, the fourth mask region M4 of the second mask 50B includes a plurality of second through holes 53B irregularly arranged in the second mask direction D2. As shown in Figure 36, the fourth mask region M4 of the third mask 50C includes a plurality of third through holes 53C irregularly arranged in the second mask direction D2. Although not shown, in a mask laminate 55 comprising the first mask 50A, the second mask 50B, and the third mask 50C, the first through holes 53A may be connected to the second through holes 53B in the second mask direction D2. In the mask laminate 55, the first through holes 53A and the second through holes 53B may be connected to the third through holes 53C in the first mask direction D1.

[0268] Figure 37 is a plan view showing an example of the second electrode 140. The second electrode 140 includes a first layer 140A, a second layer 140B, and a third layer 140C. The first layer 140A is formed using the first mask 50A shown in Figure 34. The second layer 140B is formed using the second mask 50B shown in Figure 35. The third layer 140C is formed using the third mask 50C shown in Figure 36.

[0269] As shown in Figure 37, the spacing G11 changes irregularly depending on the position in the first element direction G1 or the second element direction G2. This suppresses the reinforcement of light diffracted when passing through the transmission region 104.

[0270] Refer to Figures 45 and 46 to illustrate an example where the electrode line 140L meanders.

[0271] Figure 45 is a plan view showing an example of a second electrode 140Y in the second display area 102. The second electrode 140Y includes two or more electrode lines 140L aligned in the first element direction G1. The electrode lines 140L may include a first electrode section 141A, a second electrode section 141B, and a third electrode section 141C.

[0272] The third electrode section 141C may be located between the first electrode section 141A and the second electrode section 141B in the second element direction G2. The third electrode section 141C may be connected to the first electrode section 141A and the second electrode section 141B. That is, the first electrode section 141A and the second electrode section 141B may be electrically connected via the third electrode section 141C.

[0273] The third electrode section 141C may be located between the two first electrode sections 141A in the second element direction G2. The third electrode section 141C may be connected to the two first electrode sections 141A. That is, the two first electrode sections 141A may be electrically connected via the third electrode section 141C.

[0274] The third electrode section 141C may be located between the two second electrode sections 141B in the second element direction G2. The third electrode section 141C may be connected to the two second electrode sections 141B. That is, the two second electrode sections 141B may be electrically connected via the third electrode section 141C.

[0275] The first electrode section 141A, the second electrode section 141B, and the third electrode section 141C may each correspond to a single element 115. A single element 115 may include a first element 115A, a second element 115B, and a third element. When viewed along the second element direction G2, the element 115 corresponding to the first electrode section 141A and the element 115 corresponding to the second electrode section 141B may overlap. When viewed along the second direction G2, multiple elements 115 corresponding to the third electrode section 141C may overlap. When viewed along the second direction G2, the element 115 corresponding to the third electrode section 141C does not have to overlap with the element 115 corresponding to the first electrode section 141A and the element 115 corresponding to the second electrode section 141B. For example, the electrode line 140L may constitute multiple elements 115 arranged in a staggered pattern.

[0276] Figure 46 is a plan view showing an example of a first electrode section 141A, a second electrode section 141B, and a third electrode section 141C. The first electrode section 141A may include a first pixel section 142A and a first connection section 143A. The second electrode section 141B may include a second pixel section 142B and a second connection section 143B. The third electrode section 141C may include a third pixel section 142C and a third connection section 143C. The third connection section 143C may be connected to the first connection section 143A or the second connection section 143B.

[0277] The first pixel section 142A, the second pixel section 142B, and the third pixel section 142C may each include one first layer 140A overlapping one organic layer 130, one second layer 140B overlapping one organic layer 130, and one third layer 140C overlapping one organic layer 130. The first pixel section 142A, the second pixel section 142B, and the third pixel section 142C may have the same shape.

[0278] When viewed along the second direction G2 of the element, the first pixel section 142A and the second pixel section 142B may overlap. When viewed along the second direction G2, multiple third pixel sections 142C may overlap. When viewed along the second direction G2, the third pixel section 142C does not have to overlap the first pixel section 142A and the second pixel section 142B.

[0279] The shape of the first connection section 143A may differ from the shape of the second connection section 143B or the shape of the third connection section 143C. The shape of the second connection section 143B may be the same as or different from the shape of the third connection section 143C.

[0280] An example of the organic device 100 will be described with reference to Figures 47 and 48.

[0281] Figure 47 is a plan view showing an example of an organic device 100. Element 115 located in the first display area 101 is also referred to as element 115X. Element 115 located in the second display area 102 is also referred to as element 115Y.

[0282] In the first display area 101, the organic layers of element 115X may be arranged in an 11th period P11 along the element's first direction G1. In the second display area 102, the organic layers of element 115Y may be arranged in a 12th period P12 along the element's first direction G1. The 12th period P12 may be the same as the 11th period P11. By having the 12th period P12 be the same as the 11th period P11, it is possible to suppress the occurrence of a visual difference between the first display area 101 and the second display area 102.

[0283] In the first display area 101, the organic layers of element 115X may be arranged in a 21st period P21 along the element's second direction G2. In the second display area 102, the organic layers of element 115Y may be arranged in a 22nd period P22 along the element's second direction G2. The 22nd period P22 may be the same as the 21st period P21. By having the 22nd period P22 be the same as the 21st period P21, it is possible to suppress the occurrence of a visual difference between the first display area 101 and the second display area 102.

[0284] Figure 48 is a plan view showing an example of the second display region 102 of Figure 47. The area of ​​element 115Y in the second display region 102 may be smaller than the area of ​​element 115X in the first display region 101. For example, the area of ​​the organic layer of element 115Y in the second display region 102 may be smaller than the area of ​​the organic layer of element 115X in the first display region 101. For example, the area of ​​the first electrode of element 115Y in the second display region 102 may be smaller than the area of ​​the first electrode of element 115X in the first display region 101. By making the area of ​​element 115Y smaller than the area of ​​element 115X, a transparent region 104 can be formed in the second display region 102, as shown in Figure 48. The multiple electrode lines 140L may be arranged in the second element direction G1 in a 12th period P12, similar to element 115Y.

[0285] The ratio of the area of ​​the first electrode of element 115Y to the area of ​​the first electrode of element 115X may be, for example, 0.1 or more, 0.2 or more, or 0.3 or more. The ratio of the area of ​​the first electrode of element 115Y to the area of ​​the first electrode of element 115X may be, for example, 0.5 or less, 0.7 or less, or 0.9 or less. The range of the ratio of the area of ​​the first electrode of element 115Y to the area of ​​the first electrode of element 115X may be determined by a first group consisting of 0.1, 0.2 and 0.3, and / or a second group consisting of 0.5, 0.7 and 0.9. The range of the ratio of the area of ​​the first electrode of element 115Y to the area of ​​the first electrode of element 115X may be determined by a combination of any one value included in the first group described above and any one value included in the second group described above. The range of the ratio of the area of ​​the first electrode of element 115Y to the area of ​​the first electrode of element 115X may be determined by any two combinations of values ​​included in the first group described above. The range of the ratio of the area of ​​the first electrode of element 115Y to the area of ​​the first electrode of element 115X may be determined by any two combinations of values ​​included in the second group described above. For example, the ratio of the area of ​​the first electrode of element 115Y to the area of ​​the first electrode of element 115X may be 0.1 or more and 0.9 or less, 0.1 or more and 0.7 or less, 0.1 or more and 0.5 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, 0.2 or more and 0.9 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.5 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.9 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.5 or less, 0.5 or more and 0.9 or less, 0.5 or more and 0.7 or less, or 0.7 or more and 0.9 or less.

[0286] An example of a method for forming the transparent region 104 will be described with reference to Figures 49 to 52. Specifically, an example of forming a suppression layer on the substrate 110 before the step of forming the second electrode 140 will be described. The suppression layer has the characteristic that the conductive material constituting the second electrode 140 does not easily adhere to it.

[0287] Figure 49 is a plan view showing an example of a mask 60 for forming a suppression layer. The mask 60 includes at least one cell 62. The cell 62 includes through holes 63 and shielding regions 64. The mask 60 may include two or more cells 62. One cell 62 may correspond to the display area of ​​one organic EL display device, i.e., one screen.

[0288] Mask 60, like mask 50 described above, includes a third mask region M3 and a fourth mask region M4. The third mask region M3 corresponds to the first display region 101 of the organic device 100. The fourth mask region M4 corresponds to the second display region 102 of the organic device 100.

[0289] The third mask region M3 includes a shielding region 64. The third mask region M3 does not necessarily include a through hole 63. That is, the entire area of ​​the third mask region M3 may be composed of the shielding region 64.

[0290] The fourth mask region M4 includes through-holes 63 and shielding regions 64. The through-holes 63 of the fourth mask region M4 correspond to the transmission regions 104. For example, the fourth mask region M4 may include a plurality of through-holes 63 aligned in the first mask direction D1. The through-holes 63 may traverse the fourth mask region M4 in the first mask direction D1. The shielding regions 64 of the fourth mask region M4 correspond to the second electrode 140Y. For example, the fourth mask region M4 may include a plurality of shielding regions 64 aligned in the first mask direction D1. For example, the shielding regions 64 may extend in the second mask direction D2. For example, the shielding regions 64 of the fourth mask region M4 may include a first end and a second end connected to the shielding regions 64 of the third mask region M3. The second end is located on the opposite side from the first end in the second mask direction D2.

[0291] Figure 50 is a cross-sectional view showing an example of the suppression layer formation process for forming the suppression layer 170. The suppression layer formation process is performed after the process of forming the organic layer 130 and before the process of forming the second electrode 140.

[0292] The suppression layer formation step may include a step of depositing the suppression layer material 170 onto the substrate 110 via a mask 60. As shown in Figure 50, the suppression layer 170 is formed in the region of the substrate 110 that overlaps the through hole 63.

[0293] Figure 51 is a plan view showing an example of a mask 50 for forming a second electrode 140. The mask 50 includes at least one cell 52. The cell 52 is composed of through holes 53. The cell 52 is surrounded by a shielding region 54.

[0294] Figure 52 is a cross-sectional view showing an example of the process for forming the second electrode 140. The second electrode 140 is formed by depositing the material for the second electrode 140 onto the substrate 110 via the mask 50 shown in Figure 51. As described above, the suppression layer 170 has the characteristic that the conductive material constituting the second electrode 140 is less likely to adhere to it. As shown in Figure 52, the formation of the second electrode 140 on the suppression layer 170 can be suppressed. Therefore, the region where the suppression layer 170 is formed can function as a transparent region 104.

[0295] The suppression layer 170 is transparent. For example, the transmittance of the laminate including the substrate 110 and the suppression layer 170 is preferably 70% or more, and more preferably 80% or more. The transmittance of the laminate including the substrate 110 and the suppression layer 170 can be measured by the test method for total light transmittance of transparent plastic materials in accordance with JIS K7361-1.

[0296] The material of the inhibitory layer 170 may be the material of a nucleation inhibiting coating described in WO2017072678A1 or WO2019150327A1. For example, the material of the inhibitory layer 170 may include organic materials such as low molecular weight organic materials and organic polymers. The organic material may be, for example, a polycyclic aromatic compound. A polycyclic aromatic compound includes an organic molecule comprising a core portion and at least one terminal portion bonded to the core portion. The organic molecule may contain one or more heteroatoms such as nitrogen, sulfur, oxygen, phosphorus, and aluminum. The number of terminal portions may be one or more, two or more, three or more, or four or more. If the organic molecule contains two or more terminal portions, the two or more terminal portions may be the same or different.

[0297] The terminal portion may contain a biphenylyl moiety represented by any of the following chemical structures: (la), (lb), and (lc). (la) TIFF2026053394000002.tif3371(lb) TIFF2026053394000003.tif5265(lc) TIFF2026053394000004.tif5666

[0298] The substituents Ra and Rb may each be independently selected from deuterium, fluorine, alkyl, cycloalkyl, arylalkyl, silyl, aryl, heteroaryl, fluoroalkyl, and any combination thereof.

[0299] Referring to Figures 53 and 54, an example of a method for forming the transparent region 104 will be described. Specifically, an example of forming the transparent region 104 by partially removing the second electrode 140 will be described.

[0300] Figure 53 is a cross-sectional view showing an example of the process for forming the second electrode 140. The second electrode 140 in Figure 53 is formed, for example, by depositing the material for the second electrode 140 onto the substrate 110 via the mask 50 shown in Figure 51. In this case, the second electrode 140 is formed over the entire area of ​​the first display region 101 and the second display region 102.

[0301] After the step of forming the second electrode 140, a step of partially removing the second electrode 140 is performed. For example, as shown in Figure 54, the second electrode 140 in the second display area 102 is partially irradiated with a laser L. The second electrode 140 irradiated with the laser L scatters, forming a transparent area 104.

[0302] Although not shown in the figures, the laser L may be irradiated onto the second electrode 140 through a laser mask. The laser mask includes through holes corresponding to the transmission region 104. [Examples]

[0303] Next, embodiments of the present disclosure will be described in more detail by reference to examples, but embodiments of the present disclosure are not limited to the following examples unless they exceed the gist of the disclosure.

[0304] Example 1 The diffraction that occurs in light passing between electrode lines 140L was verified through simulation.

[0305] The substrate 110 and second electrode 140 shown in Figure 38 were designed. The second electrode 140 includes multiple electrode lines 140L aligned in the first element direction G1. The electrode lines 140L are the same as the electrode lines 140L shown in Figure 3. The spacing G11 changes irregularly depending on the position in the first element direction G1 and the second element direction G2.

[0306] Based on the configuration shown in Figure 39, the intensity distribution of light passing between the electrode lines 140L and reaching the screen 113 was calculated by simulation. First, light L1 was incident on the substrate 110 along the normal direction of the substrate 110. Next, the diffraction of light caused by the electrode lines 140L was calculated by simulation. The symbol L2 represents the light that travels in a straight line without diffraction and reaches the screen 113. The symbol Pc represents the destination of light L3 on the screen 113. The symbol L3 represents the light that is diffracted when passing between the electrode lines 140L. The wavelength of light L1 is 550 nm. The distance between the electrode lines 140L and the screen 113 is 5000 mm. Refraction of light due to the substrate 110 was ignored.

[0307] The simulation results are shown in Figures 40 and 41. The horizontal axis represents the distance from point Pc. The vertical axis represents the intensity of light that reached screen 113. Figure 40 shows the simulation results when the transmittance of electrode line 140L is set to 0%. Figure 41 shows the simulation results when the transmittance of electrode line 140L is set to 60%.

[0308] Example 2 The substrate 110 and second electrode 140 shown in Figure 42 were designed. The second electrode 140 includes multiple electrode lines 140L aligned in the first element direction G1. The electrode lines 140L are identical to the electrode lines 140L shown in Figure 22. The spacing G11 is constant regardless of the position in the first element direction G1 and the second element direction G2.

[0309] The intensity distribution of light passing through the electrode line 140L and reaching the screen 113 was calculated by simulation. The simulation results are shown in Figures 43 and 44. Figure 43 shows the simulation results when the transmittance of the electrode line 140L is set to 0%. Figure 44 shows the simulation results when the transmittance of the electrode line 140L is set to 60%.

[0310] As can be seen from the comparison between Figure 40 and Figure 43, and between Figure 41 and Figure 44, by irregularly changing the spacing G11, it was possible to suppress the high-intensity diffracted light L3 from reaching the screen 113.

Claims

1. A group of masks having a first mask direction and a second mask direction intersecting the first mask direction, Have two or more masks, The mask comprises a shielding region and through holes, A mask laminate formed by stacking two or more of the aforementioned masks includes through-regions that overlap the through-holes when viewed along the normal direction of the masks, When viewed along the normal direction of the mask, the mask laminate comprises a first mask region including the through region having a first aperture ratio, and a second mask region including the through region having a second aperture ratio smaller than the first aperture ratio. In the second mask region, the through region includes through lines aligned in the first mask direction. The through line includes through sections aligned in the second direction of the mask, In the second direction of the mask, the two adjacent through sections are connected to each other. The through-section is a group of masks comprising a first through-section having a first through-shape and a second through-section having a second through-shape different from the first through-shape.

2. The first through section includes a first main section and a first subsection connected to the first main section, The second through section includes a second main section and a second subsection connected to the second main section, The mask group according to claim 1, wherein the shape of the first subsection is different from the shape of the second subsection.

3. The mask group according to claim 2, wherein the area of ​​the first subsection is different from the area of ​​the second subsection.

4. The first subsection includes a fifth connection end connected to the first main section and a sixth connection end located on the opposite side from the fifth connection end in the second mask direction, The position of the fifth connection end in the first direction of the mask is the same as the position of the sixth connection end in the first direction of the mask. The second subsection includes a seventh connection end connected to the second main section and an eighth connection end located on the opposite side of the second mask direction from the seventh connection end, The mask group according to claim 2 or 3, wherein the position of the seventh connection end in the first direction of the mask is different from the position of the eighth connection end in the first direction of the mask.

5. The first through section includes a first main section and a first subsection connected to the first main section, The second through section includes a second main section and a second subsection connected to the second main section, The mask group according to any one of claims 1 to 4, wherein the shape of the first main section is different from the shape of the second main section.

6. The mask group according to claim 5, wherein the area of ​​the first main section is different from the area of ​​the second main section.

7. The mask group according to claim 5 or 6, wherein the dimensions of the first main section in the first direction of the mask are different from the dimensions of the second main section in the first direction of the mask.

8. The mask group according to any one of claims 1 to 7, wherein the through section includes a first mask connection in which the first through section and the second through section are connected in the second mask direction, and a second mask connection in which the first through section and the first through section are connected in the second mask direction.

9. The mask group according to any one of claims 1 to 8, wherein the through-section includes a first mask arrangement in which the first through-section and the second through-section are aligned in the first mask direction, and a second mask arrangement in which the first through-section and the first through-section are aligned in the first mask direction.

10. The mask group according to any one of claims 1 to 9, wherein the through section includes a third through section having a third through shape different from the first through shape and the second through shape.

11. A mask having a first mask direction and a second mask direction intersecting the first mask direction, It comprises a shielding area and a through hole, When viewed along the normal direction of the mask, the mask comprises a third mask region including the through-hole having a third aperture ratio, and a fourth mask region including the through-hole having a fourth aperture ratio smaller than the third aperture ratio. In the third region of the mask, the through holes are arranged in the first direction of the mask in a 15-period pattern. In the fourth region of the mask, the distance between the two through holes aligned in the first direction of the mask is greater than the 15th period. The mask wherein the fourth region of the mask includes through holes having a different shape from the through holes in the third region of the mask.

12. In the third region of the mask, the through-holes include main holes and sub-holes. The distance between the main hole and the sub-hole is 5 μm or more and 40 μm or less. In the fourth region of the mask, the through-holes include first-type through-holes and second-type through-holes. The mask according to claim 11, wherein the number of main holes in the first type through hole is different from the number of main holes in the second type through hole, or the number of sub-holes in the first type through hole is different from the number of sub-holes in the second type through hole.

13. The mask according to claim 12, wherein in the fourth region of the mask, the through holes include a first arrangement of holes in which the first type through holes and the second type through holes are aligned in the first direction of the mask, and a second arrangement of holes in which the first type through holes and the first type through holes are aligned in the first direction of the mask.

14. The mask according to claim 12 or 13, wherein in the fourth region of the mask, the through holes include a fourth arrangement of holes in which the first type through holes and the second type through holes are aligned in the second direction of the mask, and a fifth arrangement of holes in which the second type through holes are aligned in the second direction of the mask.

15. A method for manufacturing an organic device, The method comprises a second electrode formation step of forming a second electrode on an organic layer on a first electrode on a substrate using a group of masks described in any one of claims 1 to 10, The second electrode formation step is as follows: A step of forming the first layer of the second electrode by a deposition method using the first mask, A method for manufacturing an organic device, comprising the step of forming a second layer of the second electrode by a vapor deposition method using the second mask.

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