Stable alkenyl or alkynyl-containing organosilicon precursor composition

The method of distilling and storing alkenyl- or alkynyl-containing organosilicon precursors in a low-light transmission container with a stabilizer addresses impurity precipitation issues, ensuring stable vapor flow and film deposition reproducibility for high-volume manufacturing.

JP2026053664APending Publication Date: 2026-03-25VERSUM MATERIALS US LLC
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Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-12-26
Publication Date
2026-03-25

AI Technical Summary

Technical Problem

Conventional deposition processes for silicon carbide, silicon oxycarbide, and silicon carbonitride films using alkenyl or alkynyl-containing organosilicon precursor compounds face issues with impurity precipitation due to self-polymerization, leading to interruptions in vapor flow and unsuitability for high-volume manufacturing.

Method used

A method involving distillation and storage of alkenyl- or alkynyl-containing organosilicon precursor compositions in a container that allows minimal transmission of UV and visible light, combined with the addition of a stabilizer compound, to prevent polymerization and maintain purity.

Benefits of technology

This approach reduces impurity accumulation, ensuring stable vapor flow and film deposition reproducibility, suitable for high-volume manufacturing by minimizing polymerization and maintaining precursor purity over time.

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Abstract

The present invention provides a distilled alkenyl or alkynyl-containing organosilicon precursor composition. [Solution] A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, wherein formula R n SiR 1 4-n The formula comprises, where R is selected from a linear or branched C2-C6 alkenyl group or a linear or branched C2-C6 alkynyl group, and R 1 hydrogen, straight chain or branched chain C1-C 10 Alkyl and C3-C 10 A method comprising: a step of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound selected from cyclic alkyl groups, wherein n is a number selected from 1 to 4, wherein after distillation, a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced; and a storage step of storing the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container that allows transmission of 10% or less of ultraviolet light and visible light having wavelengths of 290 nm to 450 nm into the container.
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Description

[Technical Field]

[0001] Cross-reference of related applications This application claims priority under U.S. Provisional Application No. 62 / 722090, filed on 23 August 2018, and U.S. Patent Application No. 16 / 547468, filed on 21 August 2019, the disclosures of which are incorporated herein by reference in their entirety.

[0002] The present invention relates to the field of low dielectric constant materials prepared by chemical vapor deposition (CVD) for use as insulating layers in electrical devices. In particular, the present invention relates to alkenyl or alkynyl-containing organosilicon precursor compositions for use as precursors to dielectric materials, which eliminate process problems related to the precipitation of impurities caused by self-polymerization in the liquid state. [Background technology]

[0003] Alkenyl or alkynyl-containing organosilicon precursor compounds, such as tetravinylsilane (TVS), have been identified as primary candidates for the deposition of silicon carbide (SiC), silicon oxycarbide (SiOC), and silicon carbonitride (SiCN) films. Conventional deposition processes employ direct liquid injection (DLI) techniques to repeatedly transport precisely controlled amounts of the precursor compound into the process tool deposition chamber. The deposition process may include chemical vapor deposition (CVD), atomic layer deposition (ALD), plasma-enhanced chemical vapor deposition (PECVD), fluid chemical vapor deposition (FCVD), plasma-enhanced atomic layer deposition (PEALD), or other methods for depositing these films.

[0004] During deposition, it is necessary to transport alkenyl or alkynyl-containing organosilicon precursor compounds and alkenyl or alkynyl-containing organosilicon precursor compound-like precursors at a constant flow rate to the process tool using a combination of a liquid mass flow controller (LMFC) and a heated vapor injection system to volatilize the precursors, which are swept from the injector to the process chamber through a heated transport line. During this process, it is important that no non-volatile residues or components accumulate in the LMFC, injector, or chemical transport line. The unsaturated portion of the organosilicon precursor compounds is prone to polymerization, and the organosilicon precursor compounds gradually decompose or polymerize and precipitate at ambient temperature or at ordinary temperatures often encountered during normal processing, purification, or application of certain chemicals. Such accumulation of residues / precipitation leads to interruptions in the vapor flow to the process chamber, which severely affects the reproducibility of film growth and renders the process unsuitable for high-volume manufacturing (HVM).

[0005] Examples of such residues may include residues left in the injector as a result of impurities in the alkenyl or alkynyl-containing organosilicon precursor compound, such as chlorine-containing impurities that have lower volatility relative to the alkenyl or alkynyl-containing organosilicon precursor compound, and higher molecular weight impurities resulting from the autoinitiated polymerization of the alkenyl or alkynyl-containing organosilicon precursor compound due to the presence of other free radicals that absorb light or generate impurities. In such examples, the higher molecular weight impurities are thought to remain soluble in the alkenyl or alkynyl-containing organosilicon precursor compound until they pass through the injector, then begin to thicken or condense, fall into the gas transport line where they accumulate, and ultimately obstruct the flow of gas into the process chamber.

[0006] In order to avoid such interruption phenomena, it is necessary to obtain a suitable composition of an alkenyl- or alkynyl-containing organosilicon precursor compound having a concentration of falling impurities within a given range for both low molecular weight and higher molecular weight impurities. Therefore, there is a requirement for an alkenyl- or alkynyl-containing organosilicon precursor compound that is produced as purely as possible and remains pure over time after being once contained.

Summary of the Invention

[0007] The present invention provides a method for producing an alkenyl- or alkynyl-containing organosilicon precursor composition, the method comprising distilling at least once a composition comprising an alkenyl- or alkynyl-containing organosilicon compound having the formula R 10 SiR 1 4-n wherein R is selected from a linear or branched C2-C6 alkenyl group, a linear or branched C2-C6 alkynyl group, R 1 is selected from hydrogen, a linear or branched C1-C 10 alkyl group, a C3-C 10 cyclic alkyl group and a C3-C 10 aryl group, and n is a number selected from 1 to 4, such that after distillation, a distilled alkenyl- or alkynyl-containing organosilicon precursor composition is produced; and a containing step of containing the distilled alkenyl- or alkynyl-containing organosilicon precursor composition in a container that allows transmission of 10% or less of ultraviolet and visible light having wavelengths from 290 nm to 450 nm into the container.

[0008] In another aspect, the present invention provides a system for storing an alkenyl- or alkynyl-containing organosilicon compound, the system comprising a container that allows transmission of 10% or less of ultraviolet and visible light having wavelengths from 290 nm to 450 nm into the container; and an alkenyl- or alkynyl-containing organosilicon compound contained in the container having the formula R n SiR 1 4-nThe formula comprises, where R is selected from a linear or branched C2-C6 alkenyl group or a linear or branched C2-C6 alkynyl group, and R 1 hydrogen, straight chain or branched chain C1-C 10 Alkyl alkyl groups, C3-C 10 Cyclic alkyl groups and C3-C 10 It comprises a distilled alkenyl or alkynyl-containing organosilicon compound, selected from aryl groups, where n is a number selected from 1 to 4.

[0009] Various embodiments of the present invention can be used individually or in combination with each other. [Modes for carrying out the invention]

[0010] A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition is described, and the method is based on the formula R n SiR 1 4-n The formula comprises, where R is selected from a linear or branched C2-C6 alkenyl group or a linear or branched C2-C6 alkynyl group, and R 1 hydrogen, straight chain or branched chain C1-C 10 Alkyl alkyl groups, C3-C 10 Cyclic alkyl groups and C3-C 10 The method comprises: a step of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound, selected from aryl groups and where n is a number selected from 1 to 4, wherein, after distillation, a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced; and a storage step of storing the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container that allows transmission of 10% or less of ultraviolet light and visible light having wavelengths of 290 nm to 450 nm into the container.

[0011] The precursors of various embodiments include alkenyl (vinyl) and / or alkynyl groups. In one or more embodiments, in their intended use, the precursors are exposed to reactive radicals to initiate radical-induced polymerization in a deposition chamber.

[0012] In one embodiment, the method of the present invention further comprises adding a stabilizer compound to the distilled alkenyl- or alkynyl-containing organosilicon precursor composition before the accommodation step.

[0013] For a composition containing a crude (i.e., before purification by distillation according to the present invention) alkenyl- or alkynyl-containing organosilicon compound, such as a compound having residual chloride or other halide impurities, many of the chloride-containing components can be removed from the crude alkenyl- or alkynyl-containing organosilicon compound by distillation.

[0014] Formula R n SiR 1 4-n Exemplary compounds for alkenyl- or alkynyl-containing organosilicon compounds having

Chemical formula

[0015] In a particular embodiment, the alkenyl- or alkynyl-containing organosilicon compound comprises tetravinylsilane (TVS).

[0016] In the above formula, and throughout the specification, the term "linear or branched alkyl" represents a linear functional group having 1 to 10, 3 to 10 or 1 to 6 carbon atoms. In the above formula, and throughout the specification, the term "branched alkyl" represents a branched functional group having 3 to 10 or 3 to 6 carbon atoms. Exemplary linear or branched alkyl groups are methyl (Me), ethyl (Et), isopropyl (Pr i ), isobutyl (Bu i ), sec-butyl (Bu s ), tert-butyl (Bu tThe alkyl group includes, but is not limited to, isopentyl, tert-pentyl(am), isohexyl, and neohexyl. In certain embodiments, the alkyl group may have one or more functional groups bonded to it, such as, but not limited to, alkoxy groups, dialkylamino groups, or combinations thereof. In other embodiments, the alkyl group may not have one or more functional groups bonded to it. The alkyl group may be saturated or, instead, unsaturated.

[0017] In the formulas above and throughout the specification, the term “cyclic alkyl” refers to a cyclic group having 3 to 10 or 5 to 10 atoms. Exemplary cyclic alkyl groups include, but are not limited to, cyclobutyl, cyclopentyl, cyclohexyl, and cyclooctyl groups. In certain embodiments, the cyclic alkyl group is one or more C1-C 10 The cyclic alkyl group may have linear or branched substituents, or substituents containing an oxygen atom or a nitrogen atom. In this embodiment or other embodiments, the cyclic alkyl group may have one or more linear or branched alkyl or alkoxy groups as substituents, such as a methylcyclohexyl group or a methoxycyclohexyl group.

[0018] In the formulas above and throughout the specification, the term “aryl” refers to an aromatic cyclic functional group having 3 to 10 carbon atoms, 5 to 10 carbon atoms, or 6 to 10 carbon atoms. Exemplary aryl groups include, but are not limited to, phenyl, benzyl, chlorobenzyl, tolyl, and o-xylyl.

[0019] In the formulas above and throughout the specification, the term “alkenyl group” refers to a group having one or more carbon-carbon double bonds and containing 2 to 12, 2 to 10, or 2 to 6 carbon atoms. Exemplary alkenyl groups include, but are not limited to, vinyl or allyl groups.

[0020] The term "alkynyl group" refers to a group that has one or more carbon-carbon triple bonds and contains 2 to 12 or 2 to 6 carbon atoms.

[0021] In the formulas above and throughout the specification, as used herein, the term “unsaturated” means that a functional group, substituent, ring, or bridge has one or more carbon double or triple bonds. Examples of unsaturated rings are, but are not limited to, aromatic rings, such as phenyl rings. The term “saturated” means that a functional group, substituent, ring, or bridge does not have one or more double or triple bonds.

[0022] In certain embodiments, one or more alkyl groups, alkenyl groups, alkynyl groups, aryl groups, and / or cyclic alkyl groups in the formula may be "substituted" or have one or more atoms or groups of atoms substituted in place of, for example, a hydrogen atom. Exemplary substituents include, but are not limited to, oxygen, sulfur, halogen atoms (e.g., F, Cl, I, or Br), nitrogen, alkyl groups, and phosphorus. In other embodiments, one or more alkyl groups, alkenyl groups, alkynyl groups, aromatic groups, and / or aryl groups in the formula may not be substituted.

[0023] Preferably, the organosilicon compounds according to the present invention are substantially free of halides. As used herein, the term “substantially free” means, with respect to halide ions (or halides), such as chlorides (i.e., chloride-containing species, e.g., HCl or organosilicon compounds having at least one Si-Cl bond), fluorides, bromides, and iodides, less than 100 ppm (by weight) as measured by ion chromatography (IC), preferably less than 50 ppm as measured by IC, more preferably less than 10 ppm as measured by IC, and most preferably 0 ppm as measured by IC. Significant levels of chloride in the final product may cause leaching of metals from the stainless steel container into the organosilicon precursor during storage or use, in the presence of moisture or water, and the leached metal ions may catalytically affect the polymerization of the organosilicon precursor, forming higher molecular weight impurities. The slow degradation of organosilicon compounds can directly affect the film deposition process, making it difficult for semiconductor manufacturers to meet film specifications. In addition, the shelf life or stability is negatively affected by the higher decomposition rate of the organosilicon compound, thereby making it difficult to guarantee a shelf life of 1-2 years. Preferably, the organosilicon compound is a metal ion, such as Li + na + , K + Mg 2+ Ca 2+ , Al 3+ Fe 2+ Fe 3+ Ni 2+ , Cr 3+Substantially free of [unclear]. As used herein, the term "substantially free" means, with respect to Li, Na, K, Mg, Ca, Al, Fe, Ni, and Cr, less than 5 ppm (by weight), preferably less than 3 ppm, more preferably less than 1 ppm, and most preferably less than 0.1 ppm, as measured by inductively coupled plasma mass spectrometry (ICP-MS). Preferably, the organosilicon compound also substantially lacks other alkenyl or alkynyl-containing organosilicon compounds derived from either water or organosilane compounds, such as by-products from the starting materials or synthesis. As used herein, the term "substantially free" means, with respect to water, less than 100 ppm (by weight), preferably less than 50 ppm, and more preferably less than 10 ppm, as analyzed by the Karl Fischer method; the total of all organosilane impurities, such as trivinylchlorosilane, is less than 1.0 wt%, preferably less than 0.5 wt%, and preferably less than 0.1 wt%, as analyzed by gas chromatography (GC).

[0024] In some embodiments, a stabilizer compound is added to a distilled alkenyl or alkynyl-containing organosilicon precursor composition. Exemplary stabilizer compounds include 2,6-di-tert-butyl-4-methylphenol (or BHT representing butylhydroxytoluene), 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO), 2-tert-butyl-4-hydroxyanisole, 3-tert-butyl-4-hydroxyanisole, propyl ester 3,4,5-trihydroxybenzoic acid, 2-(1,1-dimethylethyl)-1,4-benzenediol, diphenylpicrylhydrazyl, 4-tert-butylcatechol, N-methylaniline, p-methoxydiphenylamine, diphenylamine, N,N'-diphenyl-p-phenylenediamine, p-hydroxydiphenylamine, phenol, octadecyl-3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, and tetrakis(methylene(3,5-di-tert-butyl)-4 The stabilizer compounds include hydroxyhydrocinnamate)methane, phenothiazine, alkylamide noisourea, thiodiethylenebis(3,5,-di-tert-butyl-4-hydroxyhydrocinnamate, 1,2,-bis(3,5-di-tert-butyl-4-hydroxyhydrocinnamoyl)hydrazine, tris(2-methyl-4-hydroxy-5-tert-butylphenyl)butane, cyclic neopentanetetraylbis(octadecyl phosphite), 4,4'-thiobis(6-tert-butyl-m-cresol), 2,2'-methylenebis(6-tert-butyl-p-cresol), oxalylbis(benzylidene hydrazide), and naturally derived antioxidants, such as raw material seed oils, wheat germ oil, tocopherol, and rubber. The function of the stabilizer compounds is to prevent the self-polymerization or oligomerization of alkenyl or alkynyl-containing organosilicon precursors.

[0025] The method developed herein includes a containment step of containing a distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container that allows less than 10% transmission of ultraviolet light and visible light having wavelengths of 290 nm to 450 nm into the container. As used herein, the distilled alkenyl or alkynyl-containing organosilicon precursor composition contained in the container described herein is referred to as a "system".

[0026] In some embodiments, the container allows transmission of 7% or less of ultraviolet and visible light having wavelengths of 290 nm to 450 nm. In other embodiments, the container allows transmission of 5% or less of ultraviolet and visible light having wavelengths of 290 nm to 450 nm. In other embodiments, the container allows transmission of 3% or less of ultraviolet and visible light having wavelengths of 290 nm to 450 nm. In other embodiments, the container allows transmission of 2% or less of ultraviolet and visible light having wavelengths of 290 nm to 450 nm. In yet another embodiment, the container allows transmission of 1% or less of ultraviolet and visible light having wavelengths of 290 nm to 450 nm. In yet another embodiment, the container allows transmission of 0% of ultraviolet and visible light having wavelengths of 290 nm to 450 nm into the container.

[0027] The transmission rate of UV and visible light through a solid medium can be measured by any method known to those skilled in the art, for example, by ultraviolet-visible (UV-VIS) absorption spectroscopy, in which the sample is irradiated from one direction and the intensity of the light emitted from the sample is measured in each direction. According to the present invention, the transmission of ultraviolet and visible light having wavelengths of 290 nm to 450 nm can be measured using any commercially available ultraviolet-visible (UV-VIS) absorption instrument.

[0028] The materials used to construct the container and the thickness of the container's wall structure are designed to effectively suppress the transmission of light having wavelengths between 290 nm and 450 nm through the container's wall structure. In some embodiments, the container is made of stainless steel. When glass or quartz containers are used, the container either has walls thick enough to block the transmission of ultraviolet and visible light having wavelengths between 290 nm and 450 nm, or the walls of such a container are covered with a layer of material that blocks the transmission of ultraviolet and visible light having wavelengths between 290 nm and 450 nm. Examples of such materials include metal foil and synthetic resin coatings.

[0029] An example of a container that can be used in the present invention is a high-purity pharmaceutical container disclosed in U.S. Patent No. 7,124913 of Air Products and Chemicals, Inc. (Allentown, PA), which is incorporated herein by reference.

[0030] Preferably, containers filled with the distilled alkenyl or alkynyl-containing organosilicon precursor composition of the present invention are stored at a temperature of 15°C to 30°C, more preferably at room temperature.

[0031] The following examples illustrate the importance of obtaining alkenyl and alkinal blends having low levels of impurities, such as higher molecular weight species, water, and halogens, such as chlorides. [Examples]

[0032] Example 1 Samples from two different sources of tetravinylsilane (TVS) were analyzed by gel permeation chromatography (GPC) to determine the concentration of higher molecular weight (HMW) species present in the liquid. Table 1 below shows comparative samples of TVS containing >1 wt% HMW species (>1,000 atomic mass units (amu), e.g., species or oligomers with molecular weights of 1,000 to 20,000 amu) and TVS containing 0.1 wt% (1,000 ppm) of higher molecular weight species (>1,000 amu). The two sources of TVS have significant differences in their impact on the continuous transport of TVS into the CVD process chamber through the DLI system.

[0033] Table 1 [Table 1]

[0034] Example 2: Effect of TVS containing impurities with higher concentrations of 1000 or more amu

[0035] Flow tests were performed in a Versum Materials DLI (Direct Liquid Injection) test system equipped with a Horiba STEC LF-410A liquid flow meter and an MV1000 vapor injector. 840 g of tetravinylsilane (TVS) chemical was transferred to a Versum Materials Chemguard® liquid storage system under an inert atmosphere. The chemical assay for TVS was 96 wt%, with an HMW impurity of 1.8 wt%, a chloride content of 97 ppm, and an H2O content of 1076 ppm. The injector temperature was set to 100°C. The downstream line of the injector was heated to 110°C. The liquid was pushed into the vapor injector using helium gas set to a pressure of 30 pissg. An additional 100 sccm of helium was used as an inert carrier gas across the injector interface. The liquid flow rate was set to 0.3 g / min. The liquid flow rate was controlled by a PLC, periodically switching between on for 8 minutes and off for 2 minutes. The pressure and liquid flow rate in the line were initially very stable. After an 11-hour chemical flow cycle, the liquid flow rate and line pressure began to fluctuate, indicating an interruption in the stable flow of the chemical into the process chamber. After the test, the TVS container was removed from the Chemguard tool, and a container with 1 kg of hexane was attached to the Chemguard. Flushing with hexane solvent was performed using the same tool that had been set up. It was confirmed that the flow of hexane was unstable and the injector was partially clogged. After the flow test was completed, the injector and the tubing located behind the injector were inspected for residues. Some amount of brownish polymer material was found in the injector and the tubing located behind the injector. Flushing with hexane also resulted in the conclusion that oligomers / polymers formed from TVS with high HMW impurity levels cannot be solubilized using hexane. Although not constrained by theory, these results suggest that when the solvent cannot be vaporized and thereby the oligomer cannot be solubilized, the oligomer / polymer accumulates within the DLI system, leading to unstable flow of the chemical product into the process chamber.

[0036] Comparative Example 3: High-Purity TVS Flow Test

[0037] For comparison, a flow test was performed using distilled high-purity TVS chemical in a Versum Materials DLI (Direct Liquid Injection) test system equipped with a Horiba STEC LF-410A liquid flow meter and an MV1000 vapor injector. 860 g of distilled TVS chemical was transferred to a Versum Materials Chemguard liquid storage system under an inert atmosphere. The chemical assay of TVS was 99.5%, with a chloride content of 0.2 ppm and an H2O content of 35 ppm. The injector temperature was set to 100°C. The downstream line of the injector was heated to 110°C. Helium gas was used to push the liquid into the vapor injector at a pressure of 30 pissg. An additional 100 sccm of helium was used as an inert carrier gas across the injector interface. The liquid flow rate was set to 0.3 g / min. The liquid flow rate was controlled by a PLC, periodically switching between on for 8 minutes and off for 2 minutes. Liquid flow rate, line pressure, and injector control voltage remained stable throughout the test until the supply of chemicals was exhausted after a 27-hour flow test. After the test, the TVS container was removed from the Chemguard tool, and the container containing hexane was attached to the Chemguard. Hexane flushing was performed using the same tool that had been set up. The flow of hexane was stable, suggesting that there were no oligomers / polymers that would interfere with the transport of the chemicals to the tool by DLI.

[0038] Example 4: The stability or shelf life of TVS is affected by the initial concentration of higher molecular weight species.

[0039] Accelerated aging tests were performed by heating TVS samples at 125°C to determine how much impurity concentrations could increase over time. Table 2 shows the increase in higher molecular weight (HMW) impurities (e.g., >1000 amu) determined by GPC after heating the samples and exposure for 1–3 days. While not intended to be constrained by any particular theory, this increase is considered to be the result of the autopolymerization of TVS. This polymerization results in the observed decrease in chemical flow rates into the deposition chamber discussed above. Oligomer or high molecular weight impurities were determined by GPC. The results indicate that lower HMW impurity concentrations result in a slower increase over the material's lifetime, which should greatly reduce the risk of chemical transport disruption.

[0040] Table 2 [Table 2]

[0041] Example 5: Effects of TVS water and chloride levels on stainless steel corrosion

[0042] Experiments were conducted to evaluate the effects of water and chloride in TVS (tetravinylsilane) on stainless steel corrosion. TVS with different levels of water and chloride were heated in electropolished 316L stainless steel tubes to simulate extended storage conditions at room temperature.

[0043] Four samples of TVS containing different amounts of water and chloride were heated at 80°C for 7 days in separate stainless steel tubes. One week at 80°C is intended to simulate the aging that typically occurs over one year at ambient temperature. For the purposes of this experiment, we assume that accelerated aging follows the Arrhenius principle using the modified 10-degree rule. For any aging period, the equivalent room temperature aging period at the accelerated aging temperature is given by the following formula:

number

[0044] Test sample #1 had low chloride and low water content; sample #2 had low chloride and high water content; sample #3 had high chloride and low water content; and sample #4 had high chloride and high water content. These four TVS samples were analyzed by ICP-MS (inductively coupled plasma-mass spectrometry) before and after heat treatment for their stainless steel metal content (Fe, Cr, Ni, Mn, and Mo). These were further analyzed by GC (gas chromatography) before and after heating to evaluate the effect of aging on TVS purity. A summary of these four samples and their analytical results are shown in Table 3 below.

[0045] No increase in stainless steel metal content was observed in any of the TVS samples after aging of TVS sample #1 (low chloride, low water). This was not the case for TVS samples #2-4. Increases were observed in Ni, Cr, and Mn for TVS samples #2-4, and all of these samples contained either high chloride, high water, or both. The increase in stainless steel metal content after heating indicated corrosion that occurs after one year of storage of TVS in stainless steel containers at room temperature. The overall purity, as measured by GC, did not change significantly after heat treatment. No significant color change was observed before / after aging of any of the TVS samples, regardless of chloride or water content.

[0046] These experiments demonstrate the importance of low chloride and low water content in TVS to prevent corrosion of stainless steel containers, which can lead to the leaching of stainless steel metals such as Fe, Cr, Ni, Mn, and Mo into TVS liquid.

[0047] Table 3: Summary of analysis results for the four test samples [Table 3]

[0048] While certain principles of the present invention have been described above in relation to aspects or embodiments, it should be clearly understood that this description is merely illustrative and not intended to limit the scope of the invention.

Claims

1. A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, Formula R n SiR 1 4-n having, wherein R is a linear or branched C 2 to C 6 alkenyl group, and a linear or branched C 2 to C 6 alkynyl group selected from the group consisting of, R 1 is hydrogen, a linear or branched C 1 to C 10 alkyl group and C 3 to C 10 aryl group selected from the group consisting of, n is 1 to 4, a step of distilling at least once a composition comprising at least one alkenyl- or alkynyl-containing organosilicon compound, after distillation, a distilled alkenyl- or alkynyl-containing organosilicon precursor composition is produced, and the distilled alkenyl- or alkynyl-containing organosilicon precursor composition contains impurities of >1000 amu less than 100 ppm (0.01 wt%) when determined by gel permeation chromatography (GPC); and A storage step comprising storing the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container is made of stainless steel, glass, or quartz, and the glass or quartz allows less than 10% of ultraviolet and visible light with wavelengths of 290 nm to 450 nm to be transmitted into the container. A method comprising the above, wherein the distilled alkenyl or alkynyl-containing organosilicon precursor composition contains less than 50 ppm of water impurities and less than 10 ppm of halide impurities.

2. The at least one alkenyl or alkynyl-containing organosilicon compound is 【Chemistry 1】 The method according to claim 1, wherein one or more are selected from the group consisting of the following.

3. The method according to claim 2, wherein the at least one alkenyl or alkynyl-containing organosilicon compound comprises tetravinylsilane.

4. The method according to claim 1, further comprising the step of adding a stabilizer compound to the distilled alkenyl or alkynyl-containing organosilicon precursor composition before the containment step.

5. The aforementioned stabilizer compounds include 2,6-di-tert-butyl-4-methylphenol, 2,2,6,6-tetramethyl-1-piperidinyloxy(TEMPO), 2-tert-butyl-4-hydroxyanisole, 3-tert-butyl-4-hydroxyanisole, propyl ester 3,4,5-trihydroxybenzoic acid, 2-(1,1-dimethylethyl)-1,4-benzenediol, diphenylpicrylhydrazyl, 4-tert-butylcatechol, N-methylaniline, p-methoxydiphenylamine, diphenylamine, N,N'-diphenyl-p-phenylenediamine, p-hydroxydiphenylamine, phenol, octadecyl-3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, tetrakis(methylene(3,5) The method according to claim 4, selected from the group consisting of (-di-tert-butyl)-4-hydroxy-hydrocinnamate)methane, phenothiazine, alkylamide noisourea, thiodiethylenebis(3,5-di-tert-butyl-4-hydroxy-hydrocinnamate, 1,2-bis(3,5-di-tert-butyl-4-hydroxyhydrocinnamoyl)hydrazine, tris(2-methyl-4-hydroxy-5-tert-butylphenyl)butane, cyclic neopentanetetraylbis(octadecyl phosphite), 4,4'-thiobis(6-tert-butyl-m-cresol), 2,2'-methylenebis(6-tert-butyl-p-cresol), oxalylbis(benzylidene hydrazide), raw material seed oil, wheat germ oil, tocopherol, and rubber.

6. The method according to claim 1, wherein the container allows transmission of 7% or less of ultraviolet light and visible light having wavelengths of 290 nm to 450 nm into the container.

7. The method according to claim 6, wherein the container allows less than 1% transmission of ultraviolet light and visible light having wavelengths of 290 nm to 450 nm into the container.

8. The method according to claim 7, wherein the container allows 0% transmission of ultraviolet light and visible light having wavelengths of 290 nm to 450 nm into the container.

9. A system for storing alkenyl or alkynyl-containing organosilicon compounds, A container made of stainless steel, glass, or quartz, wherein the glass or quartz allows less than 10% of ultraviolet light and visible light with wavelengths of 290 nm to 450 nm to be transmitted into the container; and The container contains, formula R n SiR 1 4-n The formula has a linear or branched C. 2 ~C 6 Alkenyl group and linear or branched C 2 ~C 6 Selected from the group consisting of alkynyl groups, R 1 is hydrogen, straight chain or branched chain C 1 ~C 10 alkyl group, C 3 ~C 10 Cyclic alkyl groups and C 3 ~C 10 At least one distilled alkenyl or alkynyl-containing organosilicon compound, selected from the group consisting of aryl groups, with n being 1 to 4, and having impurities of >1000 amu, less than 100 ppm (0.01 wt%), as determined by gel permeation chromatography (GPC). A system comprising, wherein the container contains less than 50 ppm of water impurities and less than 10 ppm of halide impurities.

10. The at least one distilled alkenyl or alkynyl-containing organosilicon compound is 【Chemistry 2】 The system according to claim 9, selected from the group consisting of the following.

11. The system according to claim 10, wherein the at least one distilled alkenyl or alkynyl-containing organosilicon compound comprises tetravinylsilane.

12. The system according to claim 9, wherein the container further contains a stabilizer compound.

13. The aforementioned stabilizer compounds include 2,6-di-tert-butyl-4-methylphenol (BHT), 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO), 2-tert-butyl-4-hydroxyanisole, 3-tert-butyl-4-hydroxyanisole, propyl ester 3,4,5-trihydroxybenzoic acid, 2-(1,1-dimethylethyl)-1,4-benzenediol, diphenylpicrylhydrazyl, 4-tert-butylcatechol, N-methylaniline, p-methoxydiphenylamine, diphenylamine, N,N'-diphenyl-p-phenylenediamine, p-hydroxydiphenylamine, phenol, octadecyl-3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, tetrakis(methylene(3, The system according to claim 12, selected from the group consisting of 5-di-tert-butyl)-4-hydroxy-hydrocinnamate)methane, phenothiazine, alkylamide noisourea, thiodiethylenebis(3,5,-di-tert-butyl-4-hydroxy-hydrocinnamate, 1,2,-bis(3,5-di-tert-butyl-4-hydroxyhydrocinnamoyl)hydrazine, tris(2-methyl-4-hydroxy-5-tert-butylphenyl)butane, cyclic neopentanetetraylbis(octadecyl phosphite), 4,4'-thiobis(6-tert-butyl-m-cresol), 2,2'-methylenebis(6-tert-butyl-p-cresol), oxalylbis(benzylidene hydrazide), raw material seed oil, wheat germ oil, tocopherol, and rubber.

14. The system according to claim 9, wherein the container allows transmission of 7% or less of ultraviolet light and visible light having wavelengths of 290 nm to 450 nm into the container.

15. The system according to claim 14, wherein the container allows transmission of 5% or less of ultraviolet light and visible light having wavelengths of 290 nm to 450 nm into the container.

16. The system according to claim 15, wherein the container allows transmission of 2% or less of ultraviolet light and visible light having wavelengths of 290 nm to 450 nm into the container.

17. The system according to claim 16, wherein the container allows less than 1% transmission of ultraviolet light and visible light having wavelengths of 290 nm to 450 nm into the container.

18. The system according to claim 17, wherein the container allows 0% transmission of ultraviolet light and visible light having wavelengths of 290 nm to 450 nm into the container.