Magnetic storage device

Abstract

To provide a magnetic storage device with excellent characteristics and reliability. [Solution] The magnetic storage device according to the embodiment comprises a lower structure 30, first and second stacked structures 10 provided on the lower structure, first and second boron-containing layers 21 provided along the sides of the first and second stacked structures, containing boron (B) and separated from each other, and first and second metal oxide layers 22 provided along the sides of the first and second stacked structures, containing a predetermined metal element and oxygen (O). Each of the first and second stacked structures includes a structure in which a basic part 11, a conductive lower part 12, and a conductive upper part 13 are stacked in a first direction, and the basic part includes a structure in which a first magnetic layer 11a having a variable magnetization direction, a second magnetic layer 11b having a fixed magnetization direction, and a non-magnetic layer 11c provided between the first magnetic layer and the second magnetic layer are stacked in a first direction.

Description

Technical Field

[0001] Embodiments of the present invention relate to a magnetic storage device.

Background Art

[0002] A magnetic storage device in which a plurality of magnetoresistive effect elements are integrated on a semiconductor substrate has been proposed.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] To provide a magnetic storage device having excellent characteristics and reliability.

Means for Solving the Problems

[0005] The magnetic storage device according to the embodiment includes a base structure, a first stacked structure provided on the base structure, a second stacked structure provided on the base structure and adjacent to the first stacked structure, a first boron-containing layer provided along the side surface of the first stacked structure and containing boron (B), a second boron-containing layer provided along the side surface of the second stacked structure, separated from the first boron-containing layer and containing boron (B), a first metal oxide layer provided between the first stacked structure and the first boron-containing layer along the side surface of the first stacked structure and containing a predetermined metal element and oxygen (O), and the second stacked structure along the side surface of the second stacked structure A magnetic memory device comprising a second metal oxide layer provided between the first boron-containing layer and the second boron-containing layer, separated from the first metal oxide layer, and containing the predetermined metal element and oxygen (O), wherein each of the first and second stacked structures includes a structure in which a basic portion, a conductive lower portion provided on the lower side of the basic portion, and a conductive upper portion provided on the upper side of the basic portion are stacked in a first direction, and the basic portion includes a structure in which a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer provided between the first magnetic layer and the second magnetic layer are stacked in the first direction. [Brief explanation of the drawing]

[0006] [Figure 1] This is a schematic cross-sectional view showing the configuration of a magnetic storage device according to the embodiment. [Figure 2] This figure schematically shows the relationship between the patterns of the stacked structure, the boron-containing layer, and the metal oxide layer, etc., as viewed from the Z direction, in a magnetic storage device according to the embodiment. [Figure 3] This is a schematic cross-sectional view showing a part of the manufacturing method for a magnetic storage device according to the embodiment. [Figure 4] This is a schematic cross-sectional view showing a part of the manufacturing method for a magnetic storage device according to the embodiment. [Figure 5] This is a schematic cross-sectional view showing a part of the manufacturing method for a magnetic storage device according to the embodiment. [Figure 6]This is a schematic cross-sectional view showing a part of the manufacturing method for a magnetic storage device according to the embodiment. [Figure 7] This is a schematic perspective view showing the configuration of an example of an application of a magnetic storage device according to the embodiment. [Modes for carrying out the invention]

[0007] The embodiments will be described below with reference to the drawings.

[0008] Figure 1 is a schematic cross-sectional view showing the configuration of a magnetic storage device according to an embodiment.

[0009] The magnetic memory device according to this embodiment is provided on a semiconductor substrate (not shown) and includes a plurality of stacked structures 10, a plurality of boron-containing layers 21, a plurality of metal oxide layers 22, a lower structure 30, a plurality of upper wirings 40, and an upper insulating layer 50.

[0010] Multiple laminated structures 10 are provided on a substructure 30 and are arranged in an array in the X and Y directions. Each laminated structure 10 has a structure in which multiple layers are stacked in the Z direction. The X, Y, and Z directions are intersecting directions. Specifically, the X, Y, and Z directions are orthogonal to each other.

[0011] Each of the multiple stacked structures 10 functions as a magnetoresistive element, specifically an MTJ (Magnetic Tunnel Junction) element. Each stacked structure 10 includes a base portion 11, a lower portion 12, and an upper portion 13, and contains a structure in which the base portion 11, lower portion 12, and upper portion 13 are stacked in the Z direction.

[0012] The basic part 11 includes a memory layer (first magnetic layer) 11a, a reference layer (second magnetic layer) 11b, and a tunnel barrier layer (non-magnetic layer) 11c, and includes a structure in which the memory layer 11a, reference layer 11b, and tunnel barrier layer 11c are stacked in the Z direction. The basic part 11 functions as the basic part of a magnetoresistive element.

[0013] The memory layer 11a is a ferromagnetic layer having a variable magnetization direction. A variable magnetization direction means that the magnetization direction changes in response to a predetermined writing current. The memory layer 11a contains at least one element selected from iron (Fe) and cobalt (Co). Specifically, the memory layer 11a is formed of an FeCoB layer containing iron (Fe), cobalt (Co), and boron (B).

[0014] The reference layer 11b is a ferromagnetic layer having a fixed magnetization direction and includes a first layer portion and a second layer portion stacked in the Z direction. A fixed magnetization direction means that the magnetization direction does not change with respect to a predetermined writing current.

[0015] The first layer portion is located on the side closer to the tunnel barrier layer 11c and contains at least one element selected from iron (Fe) and cobalt (Co). Specifically, the first layer portion is formed of an FeCoB layer containing iron (Fe), cobalt (Co), and boron (B).

[0016] The second layer is located on the side furthest from the tunnel barrier layer 11c and contains at least platinum (Pt). Specifically, the second layer has a superlattice structure in which multiple platinum (Pt) layers and multiple cobalt (Co) layers are alternately stacked.

[0017] The tunnel barrier layer 11c is an insulating layer provided between the memory layer 11a and the reference layer 11b. Specifically, the tunnel barrier layer 11c is formed of an MgO layer containing magnesium (Mg) and oxygen (O).

[0018] When the magnetization direction of the memory layer 11a is parallel to the magnetization direction of the reference layer 11b, the magnetoresistive effect element exhibits a relatively low-resistance state with low resistance. When the magnetization direction of the memory layer 11a is antiparallel to the magnetization direction of the reference layer 11b, the magnetoresistive effect element exhibits a relatively high-resistance state with high resistance. Therefore, the magnetoresistive effect element can store binary data according to its resistance state. The resistance state of the magnetoresistive effect element can be set according to the direction of the current flowing through the magnetoresistive effect element.

[0019] Note that the basic part 11 of the magnetoresistive effect element shown in FIG. 1 has a top-free type structure in which the memory layer 11a is located on the upper layer side of the reference layer 11b. However, the basic part 11 may have a bottom-free type structure in which the memory layer 11a is located on the lower layer side of the reference layer 11b.

[0020] The lower part 12 of the stacked structure 10 is provided on the lower layer side of the basic part 11, has conductivity, and substantially functions as the lower electrode of the magnetoresistive effect element. The lower part 12 is formed of a conductive material containing at least one element selected from hafnium (Hf), tungsten (W), titanium (Ti), and aluminum (Al). For example, the lower part 12 may be formed of any one of the Hf layer, W layer, Ti layer, and Al layer, or two or more of the Hf layer, W layer, Ti layer, and Al layer may be stacked. Further, the lower part 12 may include a layer containing two or more of the elements Hf, W, Ti, and Al in the same layer. In the present embodiment, Hf is contained at least in the lowermost part of the lower part 12.

[0021] The upper part 13 of the stacked structure 10 is provided on the upper layer side of the basic part 11, has conductivity, and substantially functions as the upper electrode of the magnetoresistive effect element. The upper part 13 contains at least one element selected from hafnium (Hf), tungsten (W), titanium (Ti), aluminum (Al), and ruthenium (Ru). The upper part 13 includes a hard mask part and an intermediate part.

[0022] The hard mask portion is the uppermost layer of the laminated structure 10 and functions as a hard mask when forming the pattern of the laminated structure 10. The hard mask portion is made of a conductive material containing at least one element selected from hafnium (Hf), tungsten (W), titanium (Ti), and aluminum (Al). For example, the hard mask portion may be made of one of the Hf layer, W layer, Ti layer, and Al layer, or it may be made of two or more layers from the Hf layer, W layer, Ti layer, and Al layer. The hard mask portion may also include layers containing two or more elements from Hf, W, Ti, and Al within the same layer.

[0023] The intermediate portion is provided between the base portion 11 and the hard mask portion and is made of a conductive material. For example, the intermediate portion is made of a ruthenium (Ru) layer.

[0024] Each of the multiple boron-containing layers 21 is provided along the side (side wall) of each of the multiple laminated structures 10, and adjacent boron-containing layers 21 provided along the side of adjacent laminated structures 10 are separated from each other. Specifically, each boron-containing layer 21 is provided so as to surround the side of each laminated structure 10. The boron-containing layer 21 is formed of an insulating material containing boron (B). Specifically, the boron-containing layer 21 is formed of boron nitride (BN) containing boron (B) and nitrogen (N).

[0025] The boron-containing layer 21 may be provided on the entire side surface of the laminated structure 10, or on a part of the side surface of the laminated structure 10. However, it is preferable that the boron-containing layer 21 is provided so as to surround the entire side surface of at least the basic portion 11 of the laminated structure 10. In this embodiment, the boron-containing layer 21 is continuously provided on the entire side surface of the laminated structure 10, including the basic portion 11, the lower portion 12, and the upper portion 13. The boron-containing layer 21 may further include an extended portion 21e that extends to the upper portion of the lower structure 30.

[0026] Each of the multiple metal oxide layers 22 is provided between the laminated structure 10 and the boron-containing layer 21 along the side (side wall) of each of the multiple laminated structures 10, and adjacent metal oxide layers 22 provided along the side of adjacent laminated structures 10 are separated from each other. Specifically, each metal oxide layer 22 is provided so as to surround the side of each laminated structure 10 and the side of each boron-containing layer 21.

[0027] The metal oxide layer 22 contains a predetermined metal element and oxygen (O). The bond dissociation energy between the predetermined metal element and oxygen (O) is preferably 500 mJ / mol or higher. Specifically, the predetermined metal element is preferably selected from hafnium (Hf), aluminum (Al), scandium (Sc), gadolinium (Gd), tantalum (Ta), and yttrium (Y).

[0028] The metal oxide layer 22 may be provided on the entire side surface of the laminated structure 10, or on a part of the side surface of the laminated structure 10. However, it is preferable that the metal oxide layer 22 is provided so as to surround the entire side surface of at least the basic portion 11 of the laminated structure 10. In this embodiment, the metal oxide layer 22 is continuously provided on the entire side surface of the laminated structure 10, including the basic portion 11, the lower portion 12, and the upper portion 13.

[0029] The lower structure 30 includes a lower insulating layer 31, a plurality of electrodes 32, and a plurality of metal-containing layers 33.

[0030] The lower insulating layer 31 functions as an interlayer insulating layer and is formed of a different material from the material of the boron-containing layer 21 and the material of the metal oxide layer 22. For example, the lower insulating layer 31 is formed of an insulating material such as silicon oxide or silicon nitride.

[0031] Each of the multiple electrodes 32 is connected to the lower surface of each of the multiple stacked structures 10. That is, each electrode 32 is connected to the lower surface of the lower portion 12 of each stacked structure 10.

[0032] Each metal-containing layer 33 contains at least one metallic element contained in each layered structure 10. Specifically, each metal-containing layer 33 contains at least one element selected from hafnium (Hf), tungsten (W), titanium (Ti), aluminum (Al), iron (Fe), cobalt (Co), platinum (Pt), and ruthenium (Ru). In particular, each metal-containing layer 33 contains a relatively large proportion of Hf.

[0033] Figure 2 schematically shows the relationship between the patterns of the laminated structure 10, boron-containing layer 21, metal oxide layer 22, lower insulating layer 31, electrode 32, and metal-containing layer 33 as viewed from the Z direction. Specifically, it schematically shows the pattern near the boundary between the laminated structure 10 and the lower structure 30.

[0034] As shown in Figures 1 and 2, the lower insulating layer 31 surrounds the sides of each electrode 32. That is, when viewed from the Z direction, the pattern of the lower insulating layer 31 is provided so as to surround the circular pattern of each electrode 32. The lower insulating layer 31 has recesses 31r, and when viewed from the Z direction, the pattern of the recesses 31r surrounds the circular pattern of each laminated structure 10.

[0035] Furthermore, when viewed from the Z direction, a ring-shaped pattern of metal oxide layer 22 is provided so as to surround the circular pattern of the laminated structure 10, and a ring-shaped pattern of boron-containing layer 21 is provided so as to surround the ring-shaped pattern of metal oxide layer 22.

[0036] Each metal-containing layer 33 is provided along the side surface of the recess 31r of the lower insulating layer 31, and when viewed from the Z direction, it has a ring-shaped pattern along the outer circumference of the pattern on the lower surface of each laminated structure 10.

[0037] Multiple boron-containing layers 21 are provided separately from each other, multiple metal oxide layers 22 are provided separately from each other, and multiple metal-containing layers 33 are provided separately from each other. Therefore, on the bottom surface of the recess 31r of the lower insulating layer 31, the boron-containing layers 21, metal oxide layers 22, and metal-containing layers 33 are not provided, except for the portion near the side surface of the recess 31r.

[0038] As already mentioned, the boron-containing layer 21 may include an extended portion 21e that extends to the upper part of the lower structure 30. In this case, the extended portion 21e is provided along the side surface of the recess 31r of the lower insulating layer 31 and is provided along the side surface of the metal-containing layer 33 so as to surround the side surface of the metal-containing layer 33.

[0039] Each of the multiple upper wirings 40 extends in the Y direction, and each upper wiring 40 is connected to the upper portion 13 of the multiple stacked structures 10 arranged in the Y direction.

[0040] The upper insulating layer 50 surrounds each side of the multiple structures, each including the laminated structure 10, the boron-containing layer 21, and the metal oxide layer 22. The upper insulating layer 50 is also provided in the regions between the multiple upper wirings 40. The upper insulating layer 50 extends to the bottom surface of the recess 31r of the lower insulating layer 31. The upper insulating layer 50 functions as an interlayer insulating layer and is made of a different material from the material of the boron-containing layer 21 and the material of the metal oxide layer 22. For example, the upper insulating layer 50 is made of an insulating material such as silicon oxide or silicon nitride.

[0041] As described above, in this embodiment, the boron-containing layer 21 is provided along the side surface of the laminated structure 10, and the metal oxide layer 22 is provided between the laminated structure 10 and the boron-containing layer 21 along the side surface of the laminated structure 10. This makes it possible to obtain a magnetic memory device with excellent properties and reliability, as described below.

[0042] Normally, when forming the pattern of a laminated structure 10, a hard mask is used as an etching mask, and the laminated film for the laminated structure 10 is etched by IBE (ion beam etching) or the like. At this time, a metal-containing layer (residue layer) containing metal elements contained in the laminated film may be formed in the region between adjacent laminated structures 10, and there is a risk that the electrical isolation between adjacent laminated structures 10 may be impaired. In other words, there is a risk that the electrical isolation between adjacent magnetoresistive elements may be impaired. In particular, if Hf is contained in the lower part 12 of the laminated structure 10, a metal-containing layer (residue layer) containing Hf will be formed, and it will be difficult to accurately remove the metal-containing layer (residue layer) containing Hf.

[0043] In this embodiment, by providing a boron-containing layer 21 along the side surface of the laminated structure 10, it is possible to prevent the problems described above, as will be explained below.

[0044] When hafnium (Hf) generated by etching during the formation of the pattern of the laminated structure 10 combines with oxygen in the interlayer insulating layer or in the atmosphere, hafnium oxide is formed. Removing the metal-containing layer (residue layer) containing hafnium oxide by etching is not easy.

[0045] In this embodiment, a boron-containing layer 21 is formed after the laminated structure 10 is formed. Boron (B) is more easily oxidized than hafnium (Hf). That is, the bond between boron and oxygen is more stable than the bond between hafnium and oxygen. Therefore, by providing a boron-containing layer 21, the oxygen of the hafnium oxide in the metal-containing layer (residue layer) bonds with boron (B), and the hafnium oxide is reduced to hafnium (Hf). Since hafnium (Hf) is easier to etch than hafnium oxide, the metal-containing layer (residue layer) can be easily removed.

[0046] However, forming the boron-containing layer 21 directly on the side surface of the laminated structure 10 may adversely affect the properties and reliability of the laminated structure 10, i.e., the properties and reliability of the magnetoresistive element. For example, the protection of the laminated structure 10 may be insufficient, potentially degrading the properties and reliability of the magnetoresistive element. Furthermore, the boron-containing layer 21 itself may also degrade the properties and reliability of the magnetoresistive element.

[0047] In this embodiment, since a metal oxide layer 22 is provided between the laminated structure 10 and the boron-containing layer 21, it is possible to prevent the problems described above.

[0048] Therefore, in this embodiment, it is possible to electrically isolate adjacent magnetoresistive elements accurately, suppress the deterioration of the characteristics and reliability of the magnetoresistive elements, and obtain a magnetic memory device with excellent characteristics and reliability.

[0049] Next, the method for manufacturing a magnetic storage device according to this embodiment will be described with reference to Figures 3 to 6 and Figure 1.

[0050] First, as shown in Figure 3, a laminated film for the laminated structure 10 is formed on a structure including the lower insulating layer 31 and the electrodes 32. Next, a hard mask layer included in the uppermost layer of the laminated film is patterned to form a hard mask pattern. Furthermore, etching is performed by IBE using the hard mask pattern as a mask. In this way, a laminated structure 10 is formed, including the basic part 11 (storage layer 11a, reference layer 11b, and tunnel barrier layer 11c), the lower part 12, and the upper part 13. In this etching process, over-etching is performed to physically and reliably separate adjacent laminated structures 10. As a result, a part of the lower insulating layer 31 is etched, and a recess 31r is formed. In addition, a metal-containing layer (residue layer) 33 containing metal elements contained in the laminated structure 10 is formed on the bottom and sides of the recess 31r. The metal-containing layer (residue layer) 33 contains hafnium oxide, etc.

[0051] Next, as shown in Figure 4, a metal oxide layer 22 is formed to cover the structure obtained in the process of Figure 3. At this time, it is preferable that the metal oxide layer 22 is not formed on the bottom surface of the recess 31r of the lower insulating layer 31. For example, the metal oxide layer 22 is formed under conditions such that the metal oxide layer 22 is not deposited on the bottom surface of the recess 31r. Alternatively, if the metal oxide layer 22 is deposited on the bottom surface of the recess 31r, the metal oxide layer 22 deposited on the bottom surface of the recess 31r is removed by anisotropic etching such as IBE or RIE (reactive ion etching).

[0052] Next, as shown in Figure 5, a boron-containing layer 21 is formed to cover the structure obtained in the process shown in Figure 4. Specifically, a boron nitride (BN) layer is formed as the boron-containing layer 21.

[0053] Next, as shown in Figure 6, the boron-containing layer 21 is anisotropically etched by RIE. A gas containing chlorine (Cl) (for example, Cl2 gas) is used as the etching gas. This anisotropic etching removes the boron-containing layer 21 formed on the upper surface of the laminated structure 10 and on the bottom surface of the recesses 31r of the lower insulating layer 31, leaving only the boron-containing layer 21 formed on the side surfaces of the laminated structure 10. This anisotropic etching also removes the metal-containing layer 33 formed on the bottom surface of the recesses 31r.

[0054] As described above, the metal-containing layer (residue layer) 33 contains hafnium oxide, etc. Boron (B) is more easily oxidized than hafnium (Hf), and the bond between boron and oxygen is more stable than the bond between hafnium and oxygen. Therefore, by forming the boron-containing layer 21 before performing the anisotropic etching described above, the oxygen in the hafnium oxide combines with the boron, and hafnium is produced. As a result, the metal-containing layer (residue layer) 33 containing hafnium can be easily removed.

[0055] Furthermore, a gas containing chlorine (Cl) and boron (B) (for example, a mixed gas of Cl2 gas and BCl3 gas) may be used as the etching gas. By adding a gas containing boron (B) in this way, it is possible to further promote the removal of the metal-containing layer (residue layer) 33 containing hafnium.

[0056] Subsequently, by removing the metal oxide layer 22 on the laminated structure 10 and forming the wiring 40 and the upper insulating layer 50, the structure shown in Figure 1 can be obtained. Even if the metal oxide layer 22 and the boron-containing layer 21 remain on the upper surface of the laminated structure 10 after the process shown in Figure 6, it is possible to remove the metal oxide layer 22 and the boron-containing layer 21 remaining on the upper surface of the laminated structure 10 when forming the pattern of the wiring 40.

[0057] As described above, the manufacturing method described above allows for easy removal of the metal-containing layer (residue layer) 33 by forming the boron-containing layer 21, enabling accurate electrical isolation between adjacent magnetoresistive elements (adjacent laminated structures 10). Furthermore, the formation of the metal oxide layer 22 effectively protects the laminated structure 10. Therefore, it becomes possible to form a magnetic memory device with excellent properties and reliability.

[0058] Next, an example of the application of the magnetic storage device of this embodiment will be described. Figure 7 is a schematic perspective view showing the configuration of an example of the application of the magnetic storage device of this embodiment.

[0059] The storage device shown in Figure 7 comprises a plurality of wirings 100, a plurality of wirings 200, and a plurality of memory cells 300 provided between the plurality of wirings 100 and the plurality of wirings 200.

[0060] Each of the multiple wires 100 extends in the X direction, and each of the multiple wires 200 extends in the Y direction. One of the wires 100 and 200 corresponds to a word line, and the other of the wires 100 and 200 corresponds to a bit line. Furthermore, the wire 200 corresponds to the wire 40 in the embodiment described above.

[0061] Each of the multiple memory cells 300 includes a magnetoresistive element 400 and a selector (switching element) 500, and has a structure in which the magnetoresistive element 400 and the selector 500 are stacked in the Z direction. That is, each memory cell 300 has a structure in which the magnetoresistive element 400 and the selector 500 are connected in series. The magnetoresistive element 400 and the selector 500 are connected via the electrode 32 of the embodiment described above.

[0062] The basic structure of the magnetoresistive element 400 corresponds to the structure shown in the above-described embodiment (a structure including a laminated structure 10, a boron-containing layer 21, and a metal oxide layer 22, etc.). The selector 500 is a two-terminal switching element and has the characteristic of transitioning from an off state to an on state when the voltage applied between the two terminals reaches a threshold voltage.

[0063] When a voltage is applied between wiring 100 and wiring 200, and the voltage applied to selector 500 exceeds a threshold voltage, selector 500 transitions from the off state to the on state. As a result, current flows to the magnetoresistive element 400 connected in series with selector 500, making it possible to write to or read from the magnetoresistive element 400.

[0064] By applying the magnetic storage device of this embodiment to a storage device as shown in Figure 7, it is possible to obtain a storage device with excellent characteristics and reliability.

[0065] Although the storage device shown in Figure 7 has a structure in which the magnetoresistive element 400 is located on the upper side of the selector 500, it may also have a structure in which the magnetoresistive element 400 is located on the lower side of the selector 500.

[0066] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0067] 10…Laminated structure 11…Basic part 11a...Memory layer (first magnetic layer) 11b...Reference layer (second magnetic layer) 11c...Tunnel barrier layer (non-magnetic layer) 12...Lower part 13...Upper part 21...Boron-containing layer 21e...Stretched portion 22...Metal oxide layer 30...Lower structure 31...Lower insulating layer 31r...Recess 32...Electrode 33...Metal-containing layer 40...Wiring 50...Upper insulation layer 100, 200... wiring; 300... memory cells 400...Magnetoresistive element 500...Selector (switching element)

Claims

1. Substructure and A first laminated structure provided on the aforementioned substructure, A second laminated structure is provided on the substructure and is adjacent to the first laminated structure, A first boron-containing layer containing boron (B) is provided along the side surface of the first laminated structure, A second boron-containing layer is provided along the side surface of the second laminated structure, separated from the first boron-containing layer, and contains boron (B). A first metal oxide layer containing a predetermined metal element and oxygen (O) is provided between the first laminated structure and the first boron-containing layer along the side surface of the first laminated structure, A second metal oxide layer is provided between the second laminated structure and the second boron-containing layer along the side surface of the second laminated structure, separated from the first metal oxide layer, and containing the predetermined metal element and oxygen (O), A magnetic storage device comprising, Each of the first and second laminated structures includes a structure in which a basic portion, a conductive lower portion provided on the lower side of the basic portion, and a conductive upper portion provided on the upper side of the basic portion are laminated in a first direction. The basic portion includes a structure in which a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer provided between the first magnetic layer and the second magnetic layer are stacked in the first direction. A magnetic storage device characterized by the following features.

2. The first and second boron-containing layers further contain nitrogen (N). The magnetic storage device according to claim 1.

3. The bond dissociation energy between the specified metal element and oxygen (O) is 500 mJ / mol or more. The magnetic storage device according to claim 1.

4. The predetermined metallic element is selected from hafnium (Hf), aluminum (Al), scandium (Sc), gadolinium (Gd), tantalum (Ta), and yttrium (Y). The magnetic storage device according to claim 1.

5. The first magnetic layer contains at least one element selected from iron (Fe) and cobalt (Co). The magnetic storage device according to claim 1.

6. The second magnetic layer contains at least one element selected from iron (Fe) and cobalt (Co). The magnetic storage device according to claim 1.

7. The second magnetic layer further contains platinum (Pt). The magnetic storage device according to claim 6.

8. The non-magnetic layer contains magnesium (Mg) and oxygen (O). The magnetic storage device according to claim 1.

9. The lower portion contains at least one element selected from hafnium (Hf), tungsten (W), titanium (Ti), and aluminum (Al). The magnetic storage device according to claim 1.

10. The aforementioned upper portion contains at least one element selected from hafnium (Hf), tungsten (W), titanium (Ti), aluminum (Al), and ruthenium (Ru). The magnetic storage device according to claim 1.

11. The aforementioned substructure includes a lower insulating layer having a recess, Viewed from the first direction, the pattern of the recess surrounds the pattern of the first laminated structure and the pattern of the second laminated structure. The magnetic storage device according to claim 1.

12. The aforementioned substructure is A first metal-containing layer is provided along the side surface of the recess, has a pattern that, when viewed from the first direction, follows the outer circumference of the pattern on the lower surface of the first laminated structure, and contains at least one metal element contained in the first laminated structure, A second metal-containing layer is provided along the side surface of the recess, has a pattern that, when viewed from the first direction, follows the outer circumference of the pattern on the lower surface of the second laminated structure, and contains at least one metal element contained in the second laminated structure, Includes The magnetic storage device according to feature 11.

13. The first boron-containing layer includes a first extended portion provided along the side surface of the first metal-containing layer. The second boron-containing layer includes a second extended portion provided along the side surface of the second metal-containing layer. The magnetic storage device according to feature 12.

14. Each of the first and second metal-containing layers contains at least one element selected from hafnium (Hf), tungsten (W), titanium (Ti), aluminum (Al), iron (Fe), cobalt (Co), platinum (Pt), and ruthenium (Ru). The magnetic storage device according to feature 12.

15. The lower structure further includes a first electrode connected to the lower surface of the first laminated structure and a second electrode connected to the lower surface of the second laminated structure. The lower insulating layer surrounds the side surfaces of the first electrode and the second electrode. The magnetic storage device according to feature 11.

16. The structure further comprises an upper insulating layer that surrounds the sides of the structure comprising the first laminated structure, the first boron-containing layer, and the first metal oxide layer, and surrounds the sides of the structure comprising the second laminated structure, the second boron-containing layer, and the second metal oxide layer. The magnetic storage device according to claim 1.

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