Sealing system for high-temperature reaction chambers

Abstract

We provide a sealing system for high-temperature reaction chambers. [Solution] The reaction chamber may comprise a susceptor configured to support a substrate placed within the reaction chamber volume, an upper chamber space above the susceptor, a lower chamber space below the susceptor, and / or a sealing system. The sealing system may at least partially fluidly separate the upper chamber space and the lower chamber space. The sealing system may comprise a spacer plate surrounding the susceptor and / or a flexible diaphragm connected to the susceptor. The sealing system may be configured to cause at least partial fluid separation between the upper chamber space and the lower chamber space by forming at least a partial seal between the spacer plate and an extension plate, and by causing the flexible diaphragm to bend so that the bent portion of the flexible diaphragm is at least partially in contact with the spacer plate.

Description

Technical Field

[0001] The present disclosure generally relates to semiconductor processing or reactor systems. Specifically, the present disclosure relates to a reactor system and components included therein, the components enabling a seal between an upper volume and a lower volume within a reaction chamber.

Background Art

[0002] A reaction chamber can be used in various processes during the formation of electronic devices on a semiconductor substrate. For example, a reaction chamber can be used to deposit various material layers on a semiconductor substrate, etch materials, and / or clean surfaces.

[0003] A reaction chamber can include, for example, two spaces or volumes separated by a susceptor. The two spaces can include an upper chamber space above the susceptor and / or a lower chamber space below the susceptor. The lower chamber space can be vertically disposed below the upper chamber space, while the upper chamber space can be vertically disposed above the susceptor. Processing operations of one or more substrates can occur within the upper reaction space, and during operation, contaminants can undesirably be transferred from one chamber space to another. For example, contaminants can undesirably be transferred from the upper chamber space to the lower chamber space. Further, when the lower chamber space is sealed from the upper chamber space, the overall volume of the space in which substrate processing operations occur can be reduced, and thus, a smaller amount of material can be used during the formation of electronic devices on the substrate. Accordingly, a system and method for providing a seal between two spaces within a reaction chamber (e.g., for at least partially fluidly separating two chambers) may be desirable.

Summary of the Invention

Means for Solving the Problems

[0004] This summary is provided to introduce some concepts in a simplified form. These concepts are described in more detail below in the detailed description of exemplary embodiments of the present disclosure. This summary is not intended to identify any major or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0005] The reactor systems disclosed herein can facilitate at least partial sealing between two spaces within the reaction chamber of the reactor system, between chambers, or between volume sections. In various embodiments, the reactor system may comprise a reaction chamber, one of which is in fluid communication with the other space. The reaction chamber may comprise a susceptor supporting a substrate placed within the reaction chamber and configured to translate upward and downward within the reaction chamber; an upper chamber space within the reaction chamber and above the susceptor; a lower chamber space within the reaction chamber and below the susceptor; a sealing system comprising a spacer plate surrounding the susceptor; and a flexible diaphragm connected to the susceptor. The sealing system may be configured to cause at least partial fluid separation between the upper and lower chamber spaces by bending a portion of the flexible diaphragm, the bent portion of the flexible diaphragm may at least partially contact the spacer plate.

[0006] In various embodiments, the sealing system may further include an electromagnetic source connected to a spacer plate. The sealing system may be configured to cause bending of the flexible diaphragm by moving the susceptor upward within the reaction chamber, bringing the upward surface of the flexible diaphragm close to the downward surface of the spacer plate, and activating the electromagnetic source to expose the flexible diaphragm to an electromagnetic field or magnetic field.

[0007] In various embodiments, the sealing system may further include a stopper ring attached to the downward-facing surface of the spacer plate. The stopper ring may be configured to prevent particles from accumulating on the flexible diaphragm when the bent portion of the flexible diaphragm is in contact with the spacer plate.

[0008] In various embodiments, the sealing system may further include an extension plate attached to the susceptor, and a flexible diaphragm may be attached to the upward surface of the extension plate. In various embodiments, the sealing system may be configured to move the susceptor upward within the reaction chamber until the upward surface of the extension plate contacts a stopper ring.

[0009] In various embodiments, the downward-facing surface of the spacer plate may have a concave portion, and the bent portion of the flexible diaphragm may come into contact with the concave portion of the spacer plate.

[0010] In various embodiments, the sealing system may be further configured to cause fluid communication between the upper and lower chamber spaces by shutting off the electromagnetic source and moving the susceptor downward within the reaction chamber.

[0011] In various embodiments, the extension plate may include a non-magnetic metal or a non-magnetic metal alloy. In various embodiments, the flexible diaphragm may include a magnetic metal or a magnetic metal alloy. In various embodiments, the spacer plate may include a ceramic material. In various embodiments, the reaction chamber may be configured to process the substrate at a temperature of less than 600°C.

[0012] In various embodiments, the method may include translating a susceptor upward from a first position to a second position within a reaction chamber, such that the reaction chamber comprises an upper chamber space above the susceptor and a lower chamber space below the susceptor; causing at least partial fluid separation between the upper and lower chamber spaces by activating an electromagnetic source to expose a flexible diaphragm connected to the susceptor to an electromagnetic field or magnetic field; causing the flexible diaphragm to bend based on the electromagnetic field such that a bent portion of the flexible diaphragm comes into at least partial contact with a spacer plate surrounding the susceptor; and maintaining the partial fluid separation between the upper and lower chamber spaces during processing of a substrate in the upper chamber space.

[0013] In various embodiments, a flexible diaphragm may be attached to the upward-facing surface of an extension plate. Translating the susceptor to a second position may involve bringing the upward-facing surface of the extension plate attached to the susceptor into contact with a stopper ring connected to the downward-facing surface of a spacer plate.

[0014] In various embodiments, the downward-facing surface of the spacer plate may have a concave portion, and the bent portion of the flexible diaphragm may come into contact with the concave portion of the spacer plate.

[0015] In various embodiments, the method may further include stopping the electromagnetic source after processing the substrate and translating the susceptor downward from a second position to a third position.

[0016] For the purpose of outlining the benefits achieved beyond this disclosure and the prior art, specific purposes and benefits of this disclosure are described above. Naturally, it should be understood that not all of these purposes or benefits are necessarily achieved by any particular embodiment of this disclosure. Therefore, a person skilled in the art will recognize that embodiments disclosed herein may be performed in a manner that achieves or optimizes one or more benefits taught or suggested herein, without necessarily achieving other purposes or benefits that may be taught or suggested herein.

[0017] All of these embodiments are intended to be within the scope of this disclosure. These embodiments and other embodiments will be readily apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, and this disclosure is not limited to any particular embodiment(s) considered.

[0018] This specification specifically identifies and concludes in the claims that are to be embodiments of the present disclosure, although the advantages of embodiments of the present disclosure may be more readily apparent from the description of certain embodiments of the present disclosure when read in conjunction with the accompanying drawings. Elements that are given the same reference numerals throughout the drawings are intended to be the same. [Brief explanation of the drawing]

[0019] [Figure 1] This is a schematic diagram of an exemplary reactor system according to various embodiments. [Figure 2A] This is a schematic diagram of an exemplary reaction chamber in which a susceptor is positioned at the bottom, according to various embodiments. [Figure 2B] This is a schematic diagram of an exemplary reaction chamber in which the susceptor is positioned in an elevated position, according to various embodiments. [Figure 3A] This figure shows exemplary susceptors in various embodiments. [Figure 3B]A diagram showing an exemplary susceptor according to various embodiments. [Figure 3C] A diagram showing an exemplary susceptor according to various embodiments. [Figure 4A] A diagram showing an exemplary spacer plate for providing a seal within a reaction chamber according to various embodiments. [Figure 4B] A diagram showing an exemplary spacer plate for providing a seal within a reaction chamber according to various embodiments. [Figure 5] A diagram showing a method for maintaining a seal within a reaction chamber according to various embodiments. [Figure 6] A schematic view of a portion of a reaction chamber according to various embodiments. [Figure 7] A schematic view of a portion of a reaction chamber according to various embodiments. [Figure 8] A schematic view of a portion of a reaction chamber according to various embodiments. [Figure 9] A schematic view of a portion of a reaction chamber according to various embodiments.

Mode for Carrying Out the Invention

[0020] It should be understood that the elements in the figures are illustrated for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to assist in understanding the illustrated embodiments of the present disclosure.

[0021] [Detailed Description of Exemplary Embodiments] Certain specific embodiments and examples are disclosed below, but it should be understood by those skilled in the art that the scope of the present invention extends beyond the specifically disclosed embodiments and / or uses of the present invention, as well as their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed present invention should not be limited by the specific disclosed embodiments described below.

[0022] The examples presented herein do not imply that they represent the actual appearance of any particular material, apparatus, structure, or device, but are merely representations used to describe embodiments of the present disclosure.

[0023] As used herein, the term “substrate” may mean one or more of any substrate materials, for example, one or more of any substrate materials that can be modified or on which a device, circuit, or film can be formed.

[0024] As used herein, the term “Atomic Layer Deposition” (ALD) may refer to a deposition process in which a deposition cycle, preferably a series of consecutive deposition cycles, is carried out in a process chamber. Typically, during each cycle, a precursor is chemisorbed onto the deposition surface (e.g., the surface of a substrate or a previously deposited underlayment, e.g., a material deposited using a previous ALD cycle) to form a monolayer or sub-monolayer that does not readily react with additional precursors (e.g., a self-controlled reaction). Subsequently, a reactant (e.g., another precursor or reaction gas) may be introduced into the process chamber for use in converting the chemisorbed precursor into a desired material on the deposition surface, as needed. Typically, this reactant can further react with the precursor. Furthermore, a purging step may also be utilized during each cycle to remove excess precursor from the process chamber and / or excess reactant and / or reaction byproducts after the conversion of the chemisorbed precursor. Furthermore, as used herein, the term “atomic layer deposition” also means to include related terms, such as “chemical vapor atomic layer deposition,” “atomic layer epitaxy” (ALE), “molecular beam epitaxy” (MBE), gas source MBE, or organometallic MBE, as well as processes specified by chemical beam epitaxy when carried out with alternating pulses of precursor composition(s), reactive gas, and purge (e.g., inert carrier) gas.

[0025] As used herein, the term "chemical vapor deposition" (CVD) may refer to any process in which a substrate is exposed to one or more volatile precursors, which react and / or decompose on the substrate surface to produce a desired deposit.

[0026] As used herein, the terms “film” and “thin film” may refer to any continuous or discontinuous structure and material deposited by the methods disclosed herein. For example, “film” and “thin film” may include 2D (Two Dimensions) materials, nanorods, nanotubes or nanoparticles, or even partial or complete molecular layers, partial or complete atomic layers, or clusters of atoms and / or molecules. “Film” and “thin film” may include materials or layers having pinholes, but may still be at least partially continuous.

[0027] As used herein, the term “contaminant” may refer to any undesirable material placed in a reaction chamber that may affect the purity of the substrate placed in the reaction chamber. The term “contaminant” may refer to, but is not limited to, undesirable deposits, metallic and nonmetallic particles, impurities, and waste placed in the reactor system or reaction chamber or any part thereof.

[0028] Reactor systems used in ALD, CVD, and / or similar processes can be used for a variety of applications, including the deposition and etching of materials onto a substrate surface. In various embodiments, referring to Figure 1, the reactor system 50 may comprise a reaction chamber 4, a susceptor 6 for holding a substrate 30 during processing, a fluid distribution system 8 (e.g., a showerhead) for distributing one or more reactants onto the surface of the substrate 30, and one or more reactant sources 10, 12 and / or carrier and / or purge gas sources 14, which are fluid-connected to the reaction chamber 4 via lines 16, 18, 20 and / or valves or controllers 22, 24, 26. The reactor system 50 may also comprise a vacuum source / pump 28 fluid-connected to the reaction chamber 4. One or more sealing systems 29 may isolate (e.g., fluidly at least partially isolate) a portion of the volume within the reaction chamber 4.

[0029] Figure 1 shows a sealing system 29 implemented in a vertical furnace (e.g., reactor system 50) housing a single substrate (e.g., substrate 30) oriented substantially horizontally. The sealing systems described herein may also be implemented in vertical batch furnaces housing multiple substrates, diffusion ovens, horizontal furnaces in which wafers are oriented vertically, and / or other furnaces used for processing semiconductor substrates.

[0030] Referring to Figures 2A and 2B, embodiments of the present disclosure may include reactor systems and methods that can be used to process substrates in a reactor 100. In various embodiments, the reactor 100 may comprise a reaction chamber 110 for processing substrates. In various embodiments, the reaction chamber 110 may comprise an upper chamber space 112 and / or a lower chamber space 114, which may be configured to process one or more substrates. The lower chamber space 114 may be configured for loading and unloading substrates from the reaction chamber and / or to provide a pressure difference between the lower chamber space 114 and the upper chamber space 112.

[0031] The lower chamber space 114 can be connected to a vacuum source 198 (e.g., a vacuum pump). When the vacuum source 198 is started, it can provide vacuum pressure and cause gas to flow from the vacuum source 198 into the lower chamber space 114. When the vacuum source 198 is stopped, it can cause gas to flow from the lower chamber space 114 back to the vacuum source 198.

[0032] In various embodiments, the reactor 100 may be configured to process the substrate at a temperature below 800°C. In various embodiments, the reactor 100 may be configured to process the substrate at a temperature below 600°C. In various embodiments, the reactor 100 may be configured to process the substrate at a temperature below 550°C.

[0033] In various embodiments, the substrate 150 and the susceptor 130 may be movable relative to each other. For example, in various embodiments, the lift pin 139 may be configured to allow the substrate 150 to separate from the susceptor 130 and / or to be positioned in contact with the susceptor 130 (i.e., supported by the susceptor 130). In various embodiments, the susceptor 130 may move upward or downward, for example via a susceptor elevator 104, so that the substrate 150 moves with the susceptor 130. In various embodiments, the lift pin 139 may move upward or downward, for example via a lift pin elevator / platform 202. In various embodiments, one of the susceptor 130 and the lift pin 139 may remain stationary while the other moves.

[0034] In various embodiments, the susceptor 130 may move from a loading position 103 to a processing position 106, as shown in Figure 2B, and thus move the substrate 150 into the upper chamber space 112. The substrate 150 may then be processed within the upper chamber space 112. Fluids (e.g., precursors, reactant gases, carrier gases, etc.) may flow into the upper chamber space 112 through a fluid distribution system 190 (e.g., a showerhead) and come into contact with the substrate 150. The volume of the upper chamber space 112 within the reaction chamber 110 may be surrounded by at least the fluid distribution system 190, the susceptor 130, the spacer plate 160, the extension plate 170, and / or the flexible diaphragm 180.

[0035] The extension plate 170 may be installed around the susceptor 130. The extension plate 170 may be ring-shaped and / or attached to the susceptor 130. The extension plate 170 may have an inner circumference with a diameter larger than the diameter of the substrate support area on the susceptor 130. The susceptor 130 may have an annular lip on its top surface outside the substrate support area, and the extension plate 170 may be positioned on the top surface outside the lip. Alternatively, the susceptor 130 may not have an annular lip on its top surface outside the substrate support area, and the extension plate 170 may be positioned on the top surface outside the substrate support area.

[0036] The susceptor 130 may comprise a top plate (not shown) and a heating block (not shown) on which the top plate is positioned. The extension plate 170 may be ring-shaped and may be interposed between the top plate and the heating block. The extension plate 170 may be attached to the side of the heating block. The extension plate 170 may have a ring portion and an annular peripheral portion extending from the susceptor 130. The ring portion may be attached to the side of the heating block. The annular peripheral portion may comprise an upward-facing surface 171 and a downward-facing surface 172. The flexible diaphragm 180 may be partially attached to the upward-facing surface 171 of the extension plate 170. The flexible diaphragm 180 may be ring-shaped.

[0037] Figure 3A shows an upward-facing top view of an exemplary susceptor 302 (e.g., susceptor 130), while Figures 3B and 3C show exemplary cross-sectional views of an extension plate 304. The susceptor 302 may support a base material 308 (e.g., base material 150). A ring-shaped extension plate 304 (e.g., extension plate 170) may surround, contact, and / or attach to the susceptor 302.

[0038] A flexible diaphragm 306 (e.g., flexible diaphragm 180) may be positioned on the upward surface of the extension plate 304. The flexible diaphragm 306 may be ring-shaped and / or have an inner peripheral edge 312A and an outer peripheral edge 312B. In various embodiments, the extension plate 304 may have a first peripheral portion C1, the outer peripheral edge 312B of the flexible diaphragm 306 may have a second peripheral portion C2, the inner peripheral edge 312A of the flexible diaphragm 306 may have a third peripheral portion C3, and the susceptor 302 may have a fourth peripheral portion C4. The second peripheral portion C2 may be smaller than the first peripheral portion C1 and larger than the third peripheral portion C3. The third peripheral portion C3 may be smaller than the second peripheral portion C2 and larger than the fourth peripheral portion C4. The first peripheral region C1 may be larger than the second peripheral region C2, the third peripheral region C3, and the fourth peripheral region C4. The width "a" of the flexible diaphragm 306 may be in the range of 10 to 30 nanometers.

[0039] The inner peripheral edge 312A and outer peripheral edge 312B of the flexible diaphragm 306 can be attached to the extension plate 304. A portion of the flexible diaphragm 306 between the inner peripheral edge 312A and the outer peripheral edge 312B may separate from the extension plate 304 when the flexible diaphragm 306 is exposed to an electromagnetic field, but the inner peripheral edge 312A and the outer peripheral edge 312B may remain attached to the extension plate 304.

[0040] The extension plate 304 may include materials such as quartz, ceramic, or metal, for example, titanium, aluminum, or Hastelloy. The flexible diaphragm 306 may include a soft magnetic metal or soft magnetic metal alloy. A soft magnetic metal or metal alloy may be a material that can be easily magnetized when exposed to an electromagnetic field or magnetic field. Furthermore, a soft magnetic metal or metal alloy can be easily demagnetized when the electromagnetic field or magnetic field is removed. Examples of soft magnetic metals or metal alloys include steel, nickel-iron alloys, silicon-iron alloys, iron, iron-cobalt alloys, ferritic stainless steel, iron-nickel, and soft ferrite. Alternatively, the flexible diaphragm 306 may include a hard magnetic metal or hard magnetic metal alloy. A hard magnetic metal or metal alloy may be a material that can retain magnetization even in the absence of an electromagnetic field or magnetic field.

[0041] In various embodiments, when the flexible diaphragm 306 is not exposed to an electromagnetic field or magnetic field, and as shown in Figure 3B, the central portion of the flexible diaphragm 306 between the inner edge 312A and the outer edge 312B may contact the upward surface of the extension plate 304. Alternatively, in the absence of an electromagnetic field or magnetic field, and as shown in Figure 3C, the central portion of the flexible diaphragm 306 may rise relative to the inner edge 312A and the outer edge 312B.

[0042] Referring again to Figures 2A and 2B, the extension plate 170 may move with the susceptor 130 as the susceptor rises or falls within the reaction chamber. When the susceptor 130 rises to the processing position 106, a portion of the upward-facing surface of the extension plate 170 and / or a portion of the flexible diaphragm 180 may come into contact with the spacer plate 160 of the reactor 100.

[0043] In various embodiments, at least a portion of the spacer plate 160 may protrude into the reaction chamber from the chamber sidewall. The spacer plate 160 may be positioned below the fluid distribution system 190. In various embodiments, the spacer plate 160 may surround a susceptor in the reaction chamber 110. The spacer plate 160 may be connected to an extension plate 170 when the susceptor 130 is moved to a processing position (e.g., an elevated position) or when it is positioned in a processing position (e.g., an elevated position). For example, the downward surface of the spacer plate 160 may be connected to and / or in contact with the flexible diaphragm 180 or the upward surface of the extension plate 170. The spacer plate 160 may be connected to an electromagnetic source 165 (e.g., an electromagnetic coil). When activated, the electromagnetic source 165 may generate an electromagnetic field or magnetic field, and the flexible diaphragm 180 may be exposed to the electromagnetic field or magnetic field generated by the electromagnetic source 165.

[0044] Figure 4A shows a top view of the downward-facing surface of an exemplary spacer plate 400 (e.g., spacer plate 160), while Figure 4B shows a cross-sectional view of the spacer plate 400. The spacer plate 400 may have an opening 402 that allows fluid from the fluid distribution system 190 to enter the upper chamber space 112. The spacer plate 400 may further include a stopper ring 406 and / or a recessed portion 404. The stopper ring 406 may be configured to prevent particles from accumulating on the flexible diaphragm 180 when the substrate is being processed in the upper chamber space 112. An electromagnetic source 408 (e.g., electromagnetic source 165) may be positioned above the recessed portion 404.

[0045] The width "a" of the recessed portion 404 may be in the range of 10 to 30 nanometers. Figure 4B shows a recessed portion 404 having a semi-elliptical shape, but the recessed portion 404 may also have a semi-circular, bell-shaped, rectangular, triangular, trapezoidal, etc. Similarly, Figure 4B shows a stopper ring 406 having a circular cross-section, but the stopper ring 406 may also have a square, triangular, elliptical, rectangular, trapezoidal, etc. In various embodiments, the periphery of the recessed portion 404 may be larger than the periphery of the stopper ring 406 and / or the periphery of the opening 402. In various embodiments, the periphery of the stopper ring 406 may be larger than the periphery of the opening 402 and / or smaller than the periphery of the recessed portion 404. The spacer plate 400 and / or stopper ring 406 may include materials such as quartz, ceramic, or metal, e.g., titanium, aluminum, stainless steel, or Hastelloy.

[0046] Referring again to Figures 2A and 2B, in various embodiments, to create separation between the upper chamber space 112 and the lower chamber space 114, the reaction chamber 110 may include a sealing system positioned between the susceptor 130, the chamber sidewalls of the reaction chamber, and / or the fluid distribution system 190. For example, to separate or isolate the upper chamber space 112 and the lower chamber space 114, the sealing system within the reaction chamber 110 may include an extension plate 170 attached to the susceptor 130, a flexible diaphragm 180 attached to the extension plate 170, a spacer plate 160, a stopper ring 406, an electromagnetic source 165, and / or a controller 192.

[0047] The sealing system within the reaction chamber 110 may be configured to control the flow of fluid within the reaction chamber. The upper chamber space 112 and the lower chamber space 114 may be fluidly separated by forming at least a partial seal between a portion of the flexible diaphragm 180 and a portion of the spacer plate 160. The partial seal may be formed when the susceptor 130 is in the raised position 103 such that the upward surface 171 of the extension plate 170 contacts the stopper ring 406 of the spacer plate 160. When the susceptor 130 is in the raised position, the electromagnetic source 165 may be activated to generate an electromagnetic field or magnetic field. The electromagnetic field or magnetic field may allow a portion of the flexible diaphragm 180 (e.g., the central portion between the inner edge 312A and the outer edge 312B) to bend, deform, and / or expand so that the portion of the flexible diaphragm 180 that bends, deforms, and / or expands contacts the concave portion of the spacer plate 160 located below the electromagnetic source 165. Bending, deformation, and / or expansion of the flexible diaphragm 180 may be caused by the soft magnetic material or hard magnetic material within the flexible diaphragm 180 being attracted to the electromagnetic field or magnetic field generated by the electromagnetic source 165. When the electromagnetic source 165 is stopped, it may relax the bent, deformed, and / or expanded portions of the flexible diaphragm 180 back to its original shape, thereby releasing the seal. If the flexible diaphragm 180 contains a soft magnetic metal or metallic alloy, the magnetic field generated by the electromagnetic source 165 may magnetize the flexible diaphragm 180. When the magnetic field is turned off when the electromagnetic source is stopped, the flexible diaphragm 180 containing a soft magnetic metal or metallic alloy may be demagnetized. The controller 192 can control the separation and / or fluid communication between the upper chamber space 112 and the lower chamber space 114 by controlling the starting and / or stopping of the electromagnetic source 165.

[0048] Separation and / or isolation between the upper chamber space 112 and the lower chamber space 114 may be desirable to prevent or reduce the entry and / or contact of precursor gases and / or other fluids used in the processing of the substrate 150 into and / or with the lower chamber space 114 of the reaction chamber 110. For example, precursor gases used to process the substrate in the reaction space may include corrosive deposit precursors that may come into contact with the lower chamber space 114 and generate undesirable deposits / contaminants / particles, which may then be reintroduced into the upper chamber space 112, thereby providing a source of contaminants to the substrate placed in the reaction space. Isolation of the upper chamber space 112 from the lower chamber space 114 may also limit the area where plasma is generated. Various other embodiments described herein may also prevent plasma from coming into contact with the sides of the susceptor (e.g., the heating block), the inner walls of the reactor 100, and other places where conductive members are exposed, resulting in a lower stray potential applied to the processing target. As a result, the occurrence of charging damage caused by plasma and pickup problems can be reduced.

[0049] During operation, referring to method 500 shown in Figure 5, in step 502, a substrate (e.g., substrate 150) may be provided into a reaction chamber (e.g., reaction chamber 110 of reactor 100). At the time the substrate is provided, the susceptor supporting the substrate may be in a first position (e.g., lower position or load position). For example, Figure 6 shows a susceptor 604 (e.g., susceptor 130) where the upward surface of the susceptor 604 may be in a first position 608 (e.g., lower position or load position). An extension plate 606 (e.g., extension plate 170) may be attached to the susceptor 604, and when the susceptor 604 is in the first position 608, the upward surface 620 of the extension plate 606 is not in contact with the stopper ring 616 (e.g., stopper ring 406) of the spacer plate 602 (e.g., spacer plates 160, 400). Furthermore, the flexible diaphragm 624 (e.g., flexible diaphragm 180) may not be in close proximity to the recessed portion 614 (e.g., recessed portion 404) of the spacer plate 602. The spacer plate 602 may also be equipped with an electromagnetic source 622 (e.g., electromagnetic source 165). When the upward-facing surface of the susceptor 604 is in the first position 608, the fluid can flow freely between the upper chamber space 610 (e.g., upper chamber space 112) and the lower chamber space 612 (e.g., lower chamber space 114). Thus, the flexible diaphragm 624 may be in a relaxed state (e.g., without deformation, bending, or expansion).

[0050] Referring again to Figure 5, in step 504, the susceptor 604 may be translated upward from a first position 608 (e.g., lower position or load position) to a second position (e.g., raised position or processing position) so that the extension plate attached to the susceptor can contact the stopper ring of the spacer plate in step 506. For example, as shown in Figure 7, the susceptor 604 may be translated upward so that the upward surface of the susceptor 604 is in the raised position or processing position 702. Furthermore, the flexible diaphragm 624 may be in close proximity to the concave portion 614 of the spacer plate 602. The processing position 702 of the susceptor 604 may be the position where the susceptor 604 is positioned during processing of the substrate (e.g., at the top of the reaction chamber or at a desired distance from the fluid distribution system). During translation, the upward surface 620 of the extension plate 606 may engage, contact, and / or connect with the stopper ring 616 of the spacer plate 602. In step 506, the electromagnetic source 622 is not activated, and therefore the flexible diaphragm 624 may still be in a relaxed position (e.g., without deformation or expansion).

[0051] In step 508 of Figure 5, the upper and lower chamber spaces of the reaction chamber can be isolated by activating an electromagnetic source connected to the reaction chamber. For example, as shown in Figure 8, the electromagnetic source 622 can be activated to generate an electromagnetic field or magnetic field 804. The flexible diaphragm 624 may include a soft magnetic material or a hard magnetic material, and by exposing the flexible diaphragm 624 to the electromagnetic field or magnetic field 804, the central portion of the flexible diaphragm 624 may bend, deform, and / or extend toward the concave portion 614 of the spacer plate 602. The bent, deformed, and / or extended portion 802 of the flexible diaphragm 624 may come into contact with the downward-facing surface of the concave portion 614, forming a seal between the bent, deformed, and / or extended portion 802 of the flexible diaphragm 624 and the concave portion 614 of the spacer plate 602. The electromagnetic source 622 can be activated when it receives an activation signal from a controller (e.g., controller 192).

[0052] In response to the seal formed between the flexible diaphragm 624 and the spacer plate 602, the upper chamber space 610 can be isolated from the lower chamber space 612. Thus, the upper chamber space 610 can be at least partially fluidically isolated from the lower chamber space 612.

[0053] In step 510 of Figure 6, isolation between the upper chamber space 610 and the lower chamber space 612 can be maintained while the substrate from step 502 is processed in the upper chamber space 610. Isolation can be maintained by keeping the electromagnetic source 622 turned on.

[0054] In step 512 of Figure 5, the electromagnetic source may be stopped to release the seal between the flexible diaphragm 624 and the spacer plate 602. For example, as shown in Figure 9, the electromagnetic source 622 may be stopped so that, in the absence of an electromagnetic field or magnetic field, the bending, deformation, and / or expansion portion 802 (as shown in Figure 8) of the flexible diaphragm 624 can return to its relaxed state 902. The electromagnetic source 622 may be stopped when it receives a stop signal from a controller (e.g., controller 192).

[0055] In step 514 of Figure 5, the susceptor 604 may be translated downward from a raised position (e.g., raised position 702) to a lower position (e.g., a first position 608 or another lower position). By translating the susceptor downward, the fluid may be able to flow freely again between the upper chamber space 610 and the lower chamber space 612.

[0056] While exemplary embodiments of this disclosure are described herein, it should be understood that this disclosure is not limited thereto. For example, reactor systems are described in relation to various specific configurations, but this disclosure is not necessarily limited to these embodiments. Various modifications, variations, and enhancements of the systems and methods described herein can be made without departing from the spirit and scope of this disclosure.

[0057] The examples presented herein are not intended to represent the actual appearance of any particular material, structure, or device, but are merely idealized representations used to illustrate embodiments of the disclosure.

[0058] The specific embodiments illustrated and described are illustrative of the present invention and its best mode, and are not intended in any way to limit the embodiments and scope of the invention. In fact, for the sake of brevity, conventional manufacturing, association, preparation, and other functional aspects of the system may not be described in detail. Furthermore, the connecting lines shown in various figures are intended to represent illustrative functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems and / or may not exist in some embodiments.

[0059] The configurations and / or approaches described herein are illustrative in nature, and it should be understood that these particular embodiments or examples should not be considered limiting, as numerous variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various operations illustrated may be performed in the order illustrated, or in other orders, or, in some cases, omitted.

[0060] The subject matter of this disclosure includes all novel and non-obvious combinations and partial combinations thereof of the various processes, systems, and configurations disclosed herein, as well as all their equivalents.

Claims

1. A reaction chamber, It is a susceptor, Supporting the substrate placed in the reaction chamber, A susceptor configured to translate upward and downward within the reaction chamber, The upper chamber space within the reaction chamber and above the susceptor, The lower chamber space within the reaction chamber and below the susceptor, A sealing system, The spacer plate surrounding the susceptor, The susceptor is connected to a flexible diaphragm, A reaction chamber comprising a sealing system configured to cause at least partial fluid separation between the upper chamber space and the lower chamber space by causing the flexible diaphragm to bend such that the bent portion of the flexible diaphragm comes into at least partial contact with the spacer plate.

2. The sealing system further comprises an electromagnetic source connected to the spacer plate, The aforementioned sealing system Moving the susceptor upward within the reaction chamber, The upward surface of the flexible diaphragm is brought close to the downward surface of the spacer plate, The reaction chamber according to claim 1, configured to cause bending of the flexible diaphragm by activating the electromagnetic source and exposing the flexible diaphragm to an electromagnetic field.

3. The aforementioned sealing system The reaction chamber according to claim 2, further comprising a stopper ring attached to the downward-facing surface of the spacer plate, wherein the stopper ring is configured to prevent particles from accumulating on the flexible diaphragm when the bent portion of the flexible diaphragm is in contact with the spacer plate.

4. The sealing system further comprises an extension plate attached to the susceptor, The reaction chamber according to claim 3, wherein the flexible diaphragm is attached to the upward surface of the extension plate.

5. The reaction chamber according to claim 4, wherein the extension plate comprises a non-magnetic metal or a non-magnetic metal alloy.

6. The reaction chamber according to claim 4, wherein the sealing system is configured to move the susceptor upward within the reaction chamber until the upward surface of the extension plate contacts the stopper ring.

7. The aforementioned sealing system further, To stop the aforementioned electromagnetic source, The reaction chamber according to claim 2, wherein the susceptor is moved downward within the reaction chamber, thereby causing fluid communication between the upper chamber space and the lower chamber space.

8. The downward surface of the spacer plate has a concave portion, The reaction chamber according to claim 1, wherein the bent portion of the flexible diaphragm contacts the concave portion of the spacer plate.

9. The reaction chamber according to claim 1, wherein the flexible diaphragm comprises a magnetic metal or a magnetic metal alloy.

10. The reaction chamber according to claim 1, wherein the spacer plate comprises a ceramic material.

11. The reaction chamber according to claim 1, wherein the reaction chamber is configured to process the substrate at a temperature of less than 600°C.

12. A sealing system, The spacer plate surrounding the susceptor inside the reaction chamber, A flexible diaphragm connected to the susceptor, The electromagnetic source connected to the spacer plate, It is a controller, The electromagnetic source is activated to expose the flexible diaphragm to the electromagnetic field, A sealing system comprising a controller configured to cause bending of the flexible diaphragm such that the bent portion of the flexible diaphragm comes into at least partial contact with the spacer plate, thereby causing at least partial fluid separation between the upper chamber space and the lower chamber space within the reaction chamber.

13. The sealing system further comprises an extension plate attached to the susceptor, The sealing system according to claim 12, wherein the flexible diaphragm is attached to the upward surface of the extension plate.

14. The sealing system further comprises a stopper ring attached to the downward surface of the spacer plate, The aforementioned controller further, The sealing system according to claim 13, wherein the susceptor is moved upward within the reaction chamber until the upward surface of the extension plate contacts the stopper ring, before the electromagnetic source is activated.

15. The downward surface of the spacer plate has a concave portion, The sealing system according to claim 12, wherein the bent portion of the flexible diaphragm contacts the concave portion of the spacer plate.

16. The sealing system according to claim 12, wherein the controller is further configured to cause fluid communication between the upper chamber space and the lower chamber space by stopping the electromagnetic source.

17. It is a method, The translational movement involves translating a susceptor upward from a first position to a second position within a reaction chamber, wherein the reaction chamber comprises an upper chamber space above the susceptor and a lower chamber space below the susceptor. This causes at least partial fluid separation between the upper chamber space and the lower chamber space, By activating the electromagnetic source, the flexible diaphragm connected to the susceptor is exposed to the electromagnetic field, Based on the electromagnetic field, the bending of the flexible diaphragm is caused such that the bent portion of the flexible diaphragm comes into at least partial contact with the spacer plate surrounding the susceptor, thereby causing at least partial fluid separation between the upper chamber space and the lower chamber space. A method comprising maintaining the partial fluid separation between the upper chamber space and the lower chamber space during processing of a substrate in the upper chamber space.

18. The method according to claim 17, wherein translating the susceptor to the second position includes bringing the upward surface of an extension plate attached to the susceptor into contact with a stopper ring connected to the downward surface of a spacer plate, and the flexible diaphragm is attached to the upward surface of the extension plate.

19. The downward surface of the spacer plate has a concave portion, The method according to claim 17, wherein the bent portion of the flexible diaphragm contacts the concave portion of the spacer plate.

20. After the above processing of the substrate, To stop the aforementioned electromagnetic source, The method according to claim 17, further comprising translating the susceptor downward from the second position to the third position.

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