Gold-plating device, processing method, processing equipment

Abstract

This solution addresses the problem of reduced adhesion between the metal material and the chip due to the formation of an oxide layer on the surface connecting to the metal material. [Solution] By using the negative pressure source 34 to discharge the gas in the processing area 40, processing gas 92 is introduced into the processing area 40, causing an oxidation-reduction reaction with the oxide layer on the upper cap 84, or suppressing the formation of an oxide layer on the upper cap 84, thereby improving the adhesion effect between the lower surface of the upper cap 84 and the upper surface of the tip 82.

Description

Technical Field

[0004] , , , , , , , , , , , , , ,

[0005] ,

[0003]

[0001] The present invention relates to a processing method, processing equipment, and an upper mold device thereof, and particularly to a processing method, processing equipment, and an upper mold device thereof used for packaging integrated circuit components.

Background Art

[0002] Patent Document 1 describes a packaging processing method for integrated circuit components. In this method, before adhering the heat dissipation sheet, a first adhesive for adhering the heat dissipation sheet to the substrate is applied to each of the four corners on the substrate around the chip, and a second adhesive for adhering the heat dissipation sheet to the substrate is applied to the upper surface of the chip. Then, after placing the heat dissipation sheet on the substrate, the heat dissipation sheet is pressed against the substrate to couple the heat dissipation sheet to the substrate.

[0003] In addition, Patent Document 2 describes a technique of installing an adhesive heat dissipation pad on the upper surface of the chip instead of the second adhesive.

[0004] Thus, an adhesive or a heat dissipation pad, etc., which serves as a thermal interface material for bonding and heat conduction, is used between the heat dissipation sheet and the chip. Since the heat dissipation sheet is made of a metal material such as copper, for example, an oxide layer is generated due to an oxidation reaction caused by contact with air on the surface connecting to the chip of such a metal material or an oxidation reaction that may occur during a pressurization process in a high-temperature environment. When this happens, the bonding effect of the thermal interface material deteriorates, and there is a risk of causing quality problems in the packaging.

Prior Art Documents

[0006] Therefore, the present invention aims to provide a mold assembly, a processing method, and processing equipment that solve at least one drawback of the prior art. [Means for solving the problem]

[0007] To achieve the above objective, the present invention provides an upper die device suitable for use with a processing gas, which works in cooperation with a lower die device to pressurize an integrated circuit component, and comprising: an upper die structure having a cover and at least one exhaust connector and at least one supply connector disposed on the cover; a gas storage unit for containing the processing gas; at least one supply unit communicating with the gas storage unit and the at least one supply connector; at least one exhaust unit communicating with the at least one exhaust connector; and a negative pressure source communicating with the at least one exhaust unit, wherein the cover can be driven and connected to the lower die device to define a processing area together with the lower die device, and when the negative pressure source is activated, the processing gas in the gas storage unit flows into the processing area via the at least one supply unit by exhausting the gas in the processing area with the at least one exhaust unit.

[0008] Furthermore, the present invention provides a processing method comprising: placing an integrated circuit component having a substrate, a chip provided on the substrate, a thermal interface material disposed on the chip, and an upper cap provided on the thermal interface material on a lower mold device; connecting the upper mold device and the lower mold device to define a processing area for processing the integrated circuit component between the upper mold device and the lower mold device; discharging gas in the processing area with a negative pressure source to introduce processing gas into the processing area to generate an oxidation-reduction reaction with the upper cap; and pressurizing the upper cap with the upper mold device.

[0009] Furthermore, the present invention also provides a processing method in which an integrated circuit component having a substrate, a chip provided on the substrate, and an upper cap provided on the chip via a thermal interface material disposed on the chip is placed on a lower mold device, and then the upper mold device and the lower mold device are coupled together to define a processing area for processing the integrated circuit component between the upper mold device and the lower mold device, and the upper mold device pressurizes the upper cap while the processing gas flows into the processing area by discharging the gas in the processing area with a negative pressure source, thereby suppressing the formation of an oxide layer on the upper cap.

[0010] Furthermore, the present invention provides a processing apparatus suitable for processing an integrated circuit component, comprising an upper mold device and a lower mold device on which an integrated circuit component can be placed, wherein the upper mold device is driven and connected to the lower mold device, and together with the lower mold device, it can define a processing area for processing the integrated circuit component. Furthermore, the present invention provides processing equipment capable of performing the above-mentioned processing method. [Effects of the Invention]

[0011] This invention uses a negative pressure source to discharge gas from the processing area, thereby allowing processing gas to flow into the processing area and generating an oxidation-reduction reaction with the oxide layer on the upper cap, or suppressing the formation of an oxide layer on the upper cap. This improves the adhesion effect between the lower surface of the upper cap and the upper surface of the chip, thus improving the processing quality of the packaging. [Brief explanation of the drawing]

[0012] [Figure 1] A perspective view showing an integrated circuit component that is the target of processing by the processing equipment of the present invention. [Figure 2] This is an exploded perspective view showing the configuration of the integrated circuit component. [Figure 3] This is a perspective view showing the configuration of a first embodiment of the processing equipment of the present invention. [Figure 4]This is a partially omitted perspective view showing the configuration of a first embodiment of the processing equipment of the present invention. [Figure 5] This is a partially omitted front view showing the state of the first embodiment of the processing equipment of the present invention before processing an integrated circuit component. [Figure 6] This is a partially omitted front view showing the first embodiment of the processing equipment of the present invention in the process of processing an integrated circuit component. [Figure 7] This is a partially abbreviated front view showing the configuration of the upper mold apparatus in the first embodiment. [Figure 8] This is a partially abbreviated explanatory diagram showing the state of the first embodiment of the processing equipment of the present invention in the process of processing an integrated circuit component. [Figure 9] This is a partially abbreviated explanatory diagram showing a second embodiment of the processing equipment of the present invention in the process of processing an integrated circuit component. [Modes for carrying out the invention]

[0013] As shown in FIGS. 1, 3, and 7, the first embodiment of the processing equipment 100 of the present invention is suitable for pressing the integrated circuit component 8 and being used together with the processing gas 92. Further, as shown in FIG. 2, the integrated circuit component 8 includes a substrate 81, a chip 82 provided on the substrate 81, a thermal interface material 83 disposed on the chip 82, an upper cap 84 provided so as to be simultaneously attached to the substrate 81 and the chip 82, and an adhesive 85 applied to the four corners of the periphery of the substrate 81. The peripheral portion of the lower surface of the upper cap 84 is adhered to the substrate 81 by the adhesive 85. The central protruding portion of the lower surface of the upper cap 84 is adhered to the chip 82 by the thermal interface material 83, and the heat generated by the chip 82 can be conducted through the thermal interface material 83. The thermal interface material 83 is thinly formed of a material containing a metal component, and examples of the metal component include indium (In). The upper cap 84 can be made of a material containing a metal component such as copper (Cu). In this first embodiment, the processing gas 92 is generated by vaporizing the redox liquid 91, and examples of the redox liquid 91 include formic acid, but the present invention is not limited thereto.

[0014] The processing equipment 100 is provided with a pedestal structure 2, an upper mold device 3, a lower mold device 4, and a detection device 5.

[0015] As shown in FIGS. �, 5, and 7, the pedestal structure 2 has a top table 21 and a bottom table 22 that are vertically separated from each other, and four pillars 23 that extend vertically at the four corners and are connected between the top table 21 and the bottom table 22.

[0016] The upper mold device 3 is suitable for pressing the integrated circuit component 8 in cooperation with the lower mold device 4 and being used together with the processing gas 92 as described below. The upper mold device 3 is provided with an upper mold structure 6, a gas storage unit 31, two air supply units 32, two exhaust units 33, and a negative pressure source 34.

[0017] The upper die structure 6 has a support base unit 61 and a first drive unit 62 arranged on the pedestal structure 2, a second drive unit 63 arranged on the support base unit 61, and an upper die unit 64 arranged on the support base unit 61.

[0018] The support base unit 61 has an upper support base 611 arranged on the pillar 23 so as to be vertically movable with respect to the pillar 23, a lower support base 612 arranged below the upper support base 611 with a gap therebetween, and two connecting parts 613 arranged between the upper support base 611 and the lower support base 612 with a lateral gap.

[0019] The first drive unit 62 has a first drive member 621 extending vertically and penetrating the top base 21, and connected above the upper support base 611 to drive the vertical movement of the support base unit 61, and four guide arm structures 622 fixed to the upper surface of the upper support base 611, extending vertically to above the top base 21, and interlocking with the upper support base 611.

[0020] The second drive unit 63 has a second drive member 631 arranged below the upper support base 611, and a drive arm 632 driven by the second drive member 631 and applied downward to the upper die unit 64. The drive stroke of the second drive member 631 is shorter than the drive stroke of the first drive member 621.

[0021] The upper die unit 64 has a press arm structure 641 penetrating the lower support base 612 vertically, a cover 642 opening downward and having a through hole (not shown), a first heating base 643 arranged below the press arm structure 641 and attached to the through hole of the cover 64, an upper press die 644 arranged below the first heating base 643 and inside the cover 642, two exhaust connectors 645 arranged in parallel on the left side of the cover 642 so as to communicate with one exhaust unit 33 each, and two air supply connectors 646 arranged in parallel on the right side of the cover 642 so as to communicate with one air supply unit 32 each.

[0022] Each of the first heating tables 643 extends forward and backward and has a plurality of first heaters 647 arranged on the left and right sides. When the first heaters 647 are activated, the upper press die 644 can be heated to a first predetermined press temperature.

[0023] In this first embodiment, the exhaust connector 645 and the air supply connector 646 are provided on the left and right sides of the cover 642, respectively. However, in the present invention, they can also be placed on adjacent sides of the cover 642, as long as means for supplying and exhausting air into and out of the cover 642 can be connected. Furthermore, the number of exhaust connectors 645 and air supply connectors 646 does not need to be two each as in this embodiment; at least one of each is sufficient.

[0024] As shown in Figures 3 and 7, the gas storage unit 31 includes a container 311 and a heating means 312 located at the bottom of the container 311.

[0025] The container 311 is provided with a liquid storage area 313 located at the bottom of the container 311, which contains the redox liquid 91, and a gas storage area 314 located above the liquid storage area 313, which contains the processed gas 92 and is in communication with at least one air supply unit 32. Specifically, the shape of the container 311 can be formed into a suction flask shape that is wider at the bottom and narrower at the top.

[0026] The heating means 312 is used to vaporize the redox liquid 91 contained in the liquid containment area 313 to form a processing gas 92, and to heat the bottom of the container 311 to raise the temperature of the processing gas 92 to above room temperature, which is necessary for press processing. The temperature of the processing gas 92 after vaporization is 90 to 120°C, and preferably 100°C.

[0027] Each air supply unit 32 is connected to an air supply connector 646 and a gas containment area 314 of the container 311. Each air supply unit 32 has an air supply pipe 321 that is connected to the container 311 and the corresponding air supply connector 646, and an air supply valve 322 that adjusts the flow rate (i.e., the amount of air supplied) of the processing gas 92 as it passes through the air supply pipe 321.

[0028] Each exhaust unit 33 communicates with an exhaust connector 645 and a negative pressure source 34. Each exhaust unit 33 has an exhaust pipe 331 that communicates with the corresponding exhaust connector 645 and negative pressure source 34, and an exhaust valve 332 that adjusts the flow rate (i.e., exhaust volume) of the exhaust from the exhaust pipe 331.

[0029] As shown in Figures 4, 5, and 8, the lower die device 4 includes a holding unit 41 provided on the bottom base 22 of the base structure 2, a lower press die unit 42 provided on the holding unit 41, and a bottom cover unit 43 formed in a frame shape to surround the holding unit 41.

[0030] The lower press die unit 42 includes a second heating table 421 provided on the holding unit 41 and a lower press die 422 provided above the second heating table 421. Both the second heating tables 421 extend in the front-to-back direction and have a plurality of second heaters 423 arranged on the left and right sides. When the second heaters 423 are operated, the lower press die 422 can be heated to a second predetermined press temperature.

[0031] With the bottom cover unit 43 in place, the cover 642 of the upper mold structure 6 comes into contact with the bottom cover unit 43, thereby defining a processing area 40 between them, as shown in Figure 8.

[0032] The detection device 5 is configured to detect the concentration of the processing gas 92 within the processing area 40 and is installed in the holding unit 41. In this first embodiment, the detection device 5 detects the concentration of the processing gas 92 by detecting the hydrogen ion concentration of the processing gas 92. Incidentally, although the detection device 5 in this embodiment is installed in the holding unit 41, in the present invention, it can also be placed in the cover 642 of the upper mold device 3, as long as it can detect the concentration of the processing gas 92 within the processing area 40.

[0033] As shown in Figures 5, 6, and 7, the processing method performed by the processing equipment 100 of the present invention is as follows.

[0034] First, the substrate 81 of the integrated circuit component 8 is placed on the lower press die 422 of the lower die device 4.

[0035] By connecting the upper mold device 3 and the lower mold device 4, a corresponding processing area 40 for processing the integrated circuit component 8 is defined. Specifically, the first drive unit 62 drives the support base unit 61 and moves it downward relative to the pillar 23, so that the cover 642 of the upper mold unit 64 and the bottom cover unit 43 of the lower mold device 4 correspond to each other and a processing area 40 as a sealed space is defined between them (see Figure 8).

[0036] Then, by exhausting the processing gas 92 from the processing area 40 using the negative pressure source 34, the processing gas 92 flows into the processing area 40, causing an oxidation-reduction reaction with the upper cap 84 in the integrated circuit component 8.

[0037] Since the cover 642 covers the bottom cover unit 43, the processing area 40 is a sealed space. When the negative pressure source 34 is activated, the air in the processing area 40 is discharged via the exhaust unit 33, and the processing gas 92 flows into the processing area 40 via the air supply unit 32. It should be explained that when the detection device 5 confirms that the concentration of processing gas 92 in the processing area 40 has reached a predetermined value (for example, 100%), the operation of the negative pressure source 34, i.e., exhaust to the processing area 40, is interrupted, and as a result the processing gas 92 in the processing area 40 is not discharged and remains in the processing area 40.

[0038] Then, by activating the first heater 647 to heat the upper press die 644 and activating the second heater 423 to heat the lower press die 422, the upper press die 644 and the lower press die 422 are heated to a first predetermined press temperature and a second predetermined press temperature, respectively. The upper press die 644, at the first predetermined press temperature, melts the thermal interface material 83, and the lower press die 422, at the second predetermined press temperature, softens the substrate 81. In this case, if the upper cap 84 is made of a copper-containing material, an oxide film (copper oxide) may form on the upper cap 84 due to the high-temperature environment of the surroundings. However, even in this case, the oxide layer can be reduced to copper by an oxidation-reduction reaction between the processing gas 92 remaining in the processing area 40 and the oxide layer. Incidentally, although the peripheral edge of the upper cap 84 is bonded to the substrate 81, the adhesive 85 is only applied to the four corners of the peripheral edge of the substrate 81. Therefore, the processing gas 92 can enter the integrated circuit component 8 through multiple gaps 86 (see Figure 2) between the substrate 81 and the upper cap 84 and undergo an oxidation-reduction reaction with the lower surface of the upper cap 84.

[0039] Furthermore, the second drive unit 63 of the upper mold device 3 drives the press arm structure 641 to apply pressure to the upper cap 84 with the upper press die 644 located below the press arm structure 641, and at the same time heats the upper cap 84 with the upper press die 644 of the upper mold device 3, or heats the substrate 81 with the lower press die 422 of the lower mold device 4.

[0040] Then, the air supply valves 322 of each air supply unit 32 are closed to stop the supply of processing gas 92 from the gas storage unit 31, and the processing gas 92 in the processing area 40 is discharged using the negative pressure source 34. When the detection device 5 confirms that the concentration of processing gas 92 in the processing area 40 is below a predetermined value (for example, 0%), the upper mold device 3 and the lower mold device 4 are separated.

[0041] Figure 9 shows a second embodiment of the processing equipment 100 of the present invention. The difference between this second embodiment and the first embodiment lies in the configuration of the gas storage unit 31. Specifically, in this second embodiment, nitrogen (N2) is used as the processing gas 92, and the gas storage unit 31 is provided only with a container 311. Therefore, the space defined by the container 311 becomes the gas storage area 314.

[0042] In this embodiment as well, by activating the first heater 647 to heat the upper press die 644 and then activating the second heater 423 to heat the lower press die 422, the upper press die 644 and the lower press die 422 are heated to a first predetermined press temperature and a second predetermined press temperature, respectively. The upper press die 644, at the first predetermined press temperature, melts the thermal interface material 83, and the lower press die 422, at the second predetermined press temperature, softens the substrate 81. At this time, nitrogen (N2) as the processing gas 92 remaining in the processing area 40 prevents the formation of an oxide layer (copper oxide) in the upper cap 84 formed from copper material.

[0043] In summary, the present invention uses a negative pressure source 34 to discharge gas in the processing area 40, thereby introducing processing gas 92 into the processing area 40 to generate an oxidation-reduction reaction with the oxide layer on the upper cap 84, or, while suppressing the formation of an oxide layer on the upper cap 84, the upper mold device 3 pressurizes the upper cap 84. This improves the adhesion effect between the lower surface of the upper cap 84 and the upper surface of the chip 82, thereby improving the processing quality of the packaging.

[0044] Although embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications are possible without departing from its essence. [Explanation of Symbols]

[0045] 100 Processing equipment 2. Base structure 21 Top Stand 22 Bottom platform 23 Pillar 3 Upper mold device 31 Gas storage unit 311 Container 312 Heating means 313 Liquid containment area 314 Gas containment area 32 Air supply unit 321 Air supply tube 322 Air supply valve 33 Exhaust Unit 331 Exhaust pipe 332 Exhaust valve 34. Vacuum source 4 Lower mold device 40 Processing Areas 41 Holding Unit 42 Lower press die unit 421 Second heating platform 422 Lower press die 423 Second heater 43 Bottom Cover Unit 5. Detection device 6 Upper mold structure 61 Support base unit 611 Upper support stand 612 Lower support stand 613 Connection part 62 First drive unit 621 First drive member 622 Guide arm structure 63 Second drive unit 631 Second drive member 632 Drive Arm 64 Upper mold unit 641 Press Arm Structure 642 Cover 643 First heating platform 644 Upper press die 645 Exhaust Connector 646 Air supply connector 647 First heater 8. Integrated Circuit Components 81 circuit boards 82 chips 83 Thermal interface materials 84 Top cap 85 Adhesives 86 Gap 91 Redox Liquids 92 Processing gas

Claims

1. An upper die device that works in cooperation with a lower die device to pressurize integrated circuit components and is suitable for use with a processing gas, An upper mold structure having a cover and at least one exhaust connector and at least one supply connector disposed on the cover, A gas storage unit containing the aforementioned processing gas, The gas storage unit and at least one air supply unit communicating with the at least one air supply connector, At least one exhaust unit communicating with the at least one exhaust connector, A negative pressure source communicating with at least one of the exhaust units is provided, The cover is driven and connected to the lower die device, and together with the lower die device, it can define the processing area. An upper mold apparatus that, when the negative pressure source is activated, causes the gas in the processing area to flow into the processing area via the gas storage unit through the at least one air supply unit by exhausting the gas in the processing area with the at least one exhaust unit.

2. The upper mold apparatus according to claim 1, wherein the at least one exhaust unit is provided with an exhaust pipe communicating with the negative pressure source and the at least one exhaust connector, and an exhaust valve disposed in the exhaust pipe for adjusting the exhaust volume.

3. The upper mold apparatus according to claim 1, wherein the at least one air supply unit is provided with an air supply pipe communicating with the gas storage unit and the at least one air supply connector, and an air supply valve disposed in the air supply pipe for adjusting the amount of the processing gas supplied.

4. The upper mold apparatus according to claim 1, wherein the at least one exhaust connector and the at least one supply connector are arranged on opposite sides of the cover, respectively.

5. Multiple air supply units and multiple exhaust units are provided, Multiple exhaust connectors and multiple air supply connectors are provided in the upper mold structure. The multiple exhaust connectors are arranged in parallel on one side of the cover, opposite each other, so as to communicate with one of the exhaust units. The upper mold apparatus according to claim 4, wherein the plurality of air supply connectors are arranged in parallel on opposite sides of the cover so as to communicate with one of the air supply units.

6. The aforementioned processed gas is formed by the vaporization of an oxidation-reduction liquid. The gas storage unit has a container, The upper mold apparatus according to claim 1, wherein the container is provided with a liquid storage area located at the bottom of the container for storing the oxidation-reduction liquid, and a gas storage area located above the liquid storage area for storing the processing gas, which is in communication with at least one air supply unit.

7. The aforementioned processed gas is formed by the vaporization of an oxidation-reduction liquid. The gas storage unit comprises a container and a heating means. The upper mold apparatus according to claim 1, wherein the heating means heats the container to form the processing gas from the oxidation-reduction liquid and raises the temperature of the processing gas to room temperature or higher.

8. An integrated circuit component having a substrate, a chip provided on the substrate, a thermal interface material placed on the chip, and an upper cap provided on the thermal interface material is placed on the lower mold device, By connecting the upper mold device and the lower mold device, a processing area for processing the integrated circuit component is defined between the upper mold device and the lower mold device. A processing method comprising: discharging gas in the processing area using a negative pressure source, thereby introducing processing gas into the processing area to generate an oxidation-reduction reaction with the upper cap, and then pressurizing the upper cap with the upper mold device.

9. After the processing gas flows into the processing area, By interrupting the exhaust to the processing area, the processing gas is allowed to remain within the processing area. The processing method according to claim 8, wherein the upper mold device applies pressure to the upper cap.

10. When the upper mold device pressurizes the upper cap, The processing method according to claim 9, wherein the upper cap is heated with the upper mold device, or the substrate is heated with the lower mold device.

11. The processing method according to claim 9, wherein the upper mold device pressurizes the upper cap, then the processing gas in the processing area is discharged, and then the upper mold device and the lower mold device are separated.

12. An integrated circuit component having a substrate, a chip provided on the substrate, a thermal interface material placed on the chip, and an upper cap provided on the thermal interface material is placed on the lower mold device, By connecting the upper mold device and the lower mold device, a processing area for processing the integrated circuit component is defined between the upper mold device and the lower mold device. A processing method comprising using a negative pressure source to discharge gas in the processing area, thereby allowing processing gas to flow into the processing area and suppressing the formation of an oxide layer on the upper cap, while pressurizing the upper cap with the upper mold device.

13. An upper mold apparatus according to any one of claims 1 to 7, A processing apparatus suitable for processing the integrated circuit component, comprising a lower mold device on which the integrated circuit component can be placed, A processing facility in which the upper mold device is driven and connected to the lower mold device, and together with the lower mold device, can define a processing area for processing the integrated circuit component.

14. The processing equipment according to claim 13, further comprising a detection device arranged in the lower mold device or the upper mold device and configured to detect the concentration of the processing gas within the processing area.

15. A processing apparatus capable of performing the processing method described in any one of claims 8 to 12.

Images