Plasma processing apparatus and plasma control method

Abstract

The ability to switch between radical treatment and plasma treatment. [Solution] The plasma processing apparatus comprises a processing vessel, a substrate support, an electromagnetic wave generator, a dielectric, an electromagnetic wave supply unit, a resonator array structure, and a control unit. The processing vessel includes a first space and a second space for generating plasma. The substrate support unit supports the substrate. The electromagnetic wave generator generates electromagnetic waves for plasma excitation. The dielectric is provided with its first surface facing the inside of the processing vessel. The electromagnetic wave supply unit supplies electromagnetic waves into the processing vessel. The resonator array structure is provided between the first space and the second space and includes a plurality of resonators that are resonant with the magnetic field component of the electromagnetic wave, have a size smaller than the wavelength of the electromagnetic wave, and are arranged in the same plane. The control unit controls the generation of plasma in the first space and the second space. The first space is the space between the first surface of the dielectric and the resonator array structure, and the second space is the space between the resonator array structure and the substrate support unit.

Description

[Technical Field]

[0001] This disclosure relates to a plasma processing apparatus and a plasma control method. [Background technology]

[0002] The plasma processing apparatus disclosed in Patent Document 1 comprises a processing vessel, an electromagnetic wave generator, and a resonator array structure. The processing vessel provides a processing space. The electromagnetic wave generator generates electromagnetic waves for plasma excitation that are supplied to the processing space. The resonator array structure is formed by arranging a plurality of resonators that are capable of resonating with the magnetic field component of the electromagnetic wave and whose size is smaller than the wavelength of the electromagnetic wave, and is located inside the processing vessel. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] International Publication No. 2023 / 032725 [Overview of the project] [Problems that the invention aims to solve]

[0004] This disclosure provides a plasma processing apparatus and a plasma control method that can switch between radical processing and plasma processing. [Means for solving the problem]

[0005] A plasma processing apparatus according to one aspect of the present disclosure comprises a processing vessel, a substrate support, an electromagnetic wave generator, a dielectric, an electromagnetic wave supply unit, a resonator array structure, and a control unit. The processing vessel is configured to include a first space and a second space for generating plasma. The substrate support is configured to support a substrate within the processing vessel. The electromagnetic wave generator is configured to generate electromagnetic waves for plasma excitation that are supplied into the processing vessel. The dielectric is provided with its first surface facing into the processing vessel. The electromagnetic wave supply unit is configured to supply electromagnetic waves into the processing vessel via the dielectric. The resonator array structure is provided between the first space and the second space and is configured to include a plurality of resonators that are resonant with the magnetic field component of the electromagnetic wave, are smaller in size than the wavelength of the electromagnetic wave, and are arranged in the same plane. The control unit is configured to control the generation of plasma in the first space and the second space. The first space is the space between the first surface of the dielectric and the resonator array structure, and the second space is the space between the resonator array structure and the substrate support. [Effects of the Invention]

[0006] According to this disclosure, it is possible to switch between radical treatment and plasma treatment. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the first embodiment of this disclosure. [Figure 2] Figure 2 is a plan view showing an example of the configuration of the support member and resonator array structure according to the first embodiment, as viewed from above. [Figure 3] Figure 3 is a cross-sectional view showing an example of a cross-section of a single resonator in the resonator array structure according to the first embodiment. [Figure 4] Figure 4 is a plan view showing another example of the configuration of the support member and resonator array structure according to the first embodiment, as viewed from above. [Figure 5] Figure 5 is a cross-sectional view showing another example of the cross-section of a single resonator in the resonator array structure according to the first embodiment. [Figure 6] Figure 6 is a cross-sectional view showing an example of a resonator array structure according to the first embodiment. [Figure 7] Figure 7 is a cross-sectional view showing an example of section AA in Figure 6. [Figure 8] Figure 8 is a cross-sectional view showing an example of the BB section in Figure 6. [Figure 9] Figure 9 is a plan view showing another example of a single resonator in the resonator array structure according to the first embodiment. [Figure 10] Figure 10 is a cross-sectional view showing an example of the first layer of a two-layer resonator array structure according to the first embodiment. [Figure 11] Figure 11 is a cross-sectional view showing an example of the second layer of a two-layer resonator array structure according to the first embodiment. [Figure 12] Figure 12 is a cross-sectional view showing an example of a CC cross-section in Figures 10 and 11. [Figure 13] Figure 13 shows an example of a circuit model of space S1 and a resonator array structure. [Figure 14] Figure 14 shows an example of a circuit model used during plasma generation. [Figure 15] Figure 15 shows another example of a circuit model of space S1 and a resonator array structure. [Figure 16] Figure 16 shows an example of a simulation result of plasma generation when the separation distance between space S1 and space S2 is long. [Figure 17] Figure 17 shows an example of a simulation result of plasma generation when the separation distance between space S1 and space S2 is long. [Figure 18] Figure 18 shows an example of a simulation result of plasma generation when the separation distance between space S1 and space S2 is long. [Figure 19] Figure 19 shows an example of a simulation result of plasma generation when the separation distance between space S1 and space S2 is long. [Figure 20] Figure 20 shows an example of a simulation result of plasma generation when the separation distance between space S1 and space S2 is long. [Figure 21] Figure 21 shows an example of a simulation result of plasma generation when the separation distance of space S1 is short and the separation distance of space S2 is long. [Figure 22] Figure 22 shows an example of a simulation result of plasma generation when the separation distance of space S1 is short and the separation distance of space S2 is long. [Figure 23] Figure 23 shows an example of a simulation result of plasma generation when the separation distance of space S1 is short and the separation distance of space S2 is long. [Figure 24] Figure 24 shows an example of a simulation result of plasma generation when the separation distance of space S1 is short and the separation distance of space S2 is long. [Figure 25] Figure 25 shows an example of the relationship between the power supply frequency, the separation distance between spaces S1 and S2, and the plasma generation space in a single-layer resonator array structure. [Figure 26] Figure 26 shows an example of the relationship between the power supply frequency, the separation distance between spaces S1 and S2, and the plasma generation space in a two-layer resonator array structure. [Figure 27] Figure 27 shows an example of a simulation result of plasma generation according to the electromagnetic wave supply time when the separation distance of space S1 is short and the separation distance of space S2 is long. [Figure 28] Figure 28 is an example of a timing chart for a source RF signal according to the first embodiment. [Figure 29] Figure 29 shows an example of the plasma generation location according to the first embodiment. [Figure 30] Figure 30 shows an example of the plasma generation location according to the first embodiment. [Figure 31] Figure 31 is a flowchart showing an example of the processing flow of the plasma control process according to the first embodiment. [Figure 32] Figure 32 is a flowchart showing an example of the processing flow of the plasma control process according to the first embodiment. [Figure 33]Figure 33 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the second embodiment. [Figure 34] Figure 34 shows an example of switching the plasma generation space according to the position of the dielectric window according to the second embodiment. [Figure 35] Figure 35 is a schematic cross-sectional view showing an example of the configuration of the main body of the device according to Modification 1. [Figure 36] Figure 36 is a schematic cross-sectional view showing an example of the configuration of the main body of the device according to Modification 2. [Modes for carrying out the invention]

[0008] Embodiments of the disclosed plasma processing apparatus and plasma control method will be described in detail below with reference to the drawings. However, the disclosed technology is not limited to the embodiments described below.

[0009] Incidentally, in plasma processing equipment that uses microwaves for plasma excitation, the power of the microwaves supplied into the processing vessel is sometimes increased to increase the electron density of the plasma. The higher the power of the microwaves supplied into the processing vessel, the higher the electron density of the plasma can be.

[0010] Here, it is known that when the electron density of the plasma reaches a certain upper limit by increasing the power of the microwaves supplied into the processing vessel, the dielectric constant of the space inside the processing vessel becomes negative. This upper limit of electron density is appropriately called the "cutoff density." In addition, the refractive index is known as an indicator of whether microwaves propagate through space or not. The refractive index N is expressed by the following equation (1). N = √ε√μ ···(1) However, ε is the permittivity and μ is the permeability.

[0011] Since magnetic permeability is generally positive, if the dielectric constant of the space inside the processing container is negative, then according to equation (1) above, the refractive index of the space inside the processing container becomes a purely imaginary number. As a result, microwaves are attenuated and cannot propagate through the space inside the processing container. Thus, when the electron density of the plasma reaches the cutoff density, microwaves cannot propagate through the space inside the processing container, and the power of the microwaves is not sufficiently absorbed by the plasma. Consequently, there is a problem in that the densification of the plasma generated over a wide area inside the processing container is hindered. Although microwaves were explained above as an example, similar problems exist in plasma processing equipment using electromagnetic waves in the shortwave (HF) to ultra-high frequency (UHF) bands.

[0012] Furthermore, Patent Document 1 describes an example in which a resonator array structure is placed within the processing vessel of a plasma processing apparatus, separated from the dielectric window, and microwaves are supplied into the processing vessel through the dielectric window. The resonator array structure has multiple resonators that resonate with microwaves, making both the dielectric constant and permeability negative in the plasma generation region, thus enabling microwave propagation in the plasma generation region. In this case, if surface wave plasma is generated in the space between the dielectric window and the resonator array structure, microwave propagation is possible if the separation distance between the dielectric window and the resonator array structure is less than or equal to the plasma skin depth (e.g., about 20 mm). However, when the plasma density is increased, if the separation distance between the dielectric window and the resonator array structure is short (e.g., less than 50 mm), the plasma may become unstable. In this case, the separation distance between the dielectric window and the resonator array structure varies depending on the gas type, pressure, power, and power supply frequency. It is stated that there is no restriction on the separation distance if there is no plasma in the space between the dielectric window and the resonator array structure and microwave propagation to the resonator array structure is possible.

[0013] Here, we consider the case in the plasma processing apparatus of Patent Document 1, where electromagnetic waves are radiated to a resonator array structure using an antenna similar to that of inductively coupled plasma. When the separation distance between the dielectric window and the resonator array structure is short (for example, less than 50 mm), the space between the dielectric window and the resonator array structure has weak coupling with the antenna, resulting in the generation of low-density plasma or no plasma generation at all. In this case, when multiple resonators of the resonator array structure resonate with the electromagnetic waves radiated from the antenna, the coupling between the antenna and the resonator array structure becomes stronger, and it is thought that plasma is generated on the processing chamber side, which is opposite to the dielectric window side of the resonator array structure. Now, let's consider the plasma ignition. When the separation distance between the dielectric window and the resonator array structure is short (for example, less than 50 mm), the plasma ignited in the space between the dielectric window and the resonator array structure propagates, for example, through through holes provided in the resonator array structure to the space between the resonator array structure and the substrate on the processing chamber side. Subsequently, if the separation distance between the resonator array structure and the substrate on the processing chamber side is long (for example, 50 mm or more), it is thought that plasma is stably generated in the space between the resonator array structure and the substrate on the processing chamber side. In other words, plasma (ions and radicals) is supplied to the processing chamber.

[0014] On the other hand, when the separation distance between the dielectric window and the resonator array structure is long (for example, 50 mm or more), the space between the dielectric window and the resonator array structure becomes strongly coupled with the antenna, and it is thought that plasma is generated together with the dielectric window side of the resonator array structure that resonates with electromagnetic waves. In this case, if it is desired to supply radicals to the processing chamber, it is conceivable to generate plasma in the space between the dielectric window and the resonator array structure and supply radicals to the processing chamber using through holes provided in the resonator array structure as showerheads. In other words, radicals are supplied to the processing chamber. In substrate processing using high-density plasma with a resonator array structure, there are cases where it is desired to switch between radical processing and plasma (ion and radical) processing. For example, there are cases where it is desired to perform film deposition processing with radicals and cleaning processing with plasma. In this case, it is required to switch between radical processing and plasma processing in a single device. Therefore, it is expected that switching between radical processing and plasma processing will also be possible in substrate processing using high-density plasma with a resonator array structure.

[0015] (First Embodiment) In the first embodiment, an embodiment will be described in which radical processing and plasma processing are switched by controlling electromagnetic waves for plasma excitation, when the separation distance between the dielectric window and the resonator array structure is short, and the separation distance between the resonator array structure and the substrate on the processing chamber side is long. A short separation distance between the dielectric window and the resonator array structure means that the separation distance is, for example, less than 50 mm, and a long separation distance between the resonator array structure and the substrate on the processing chamber side means that the separation distance is, for example, 50 mm or more.

[0016] [Configuration of Plasma Processing System] Figure 1 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus 1 according to the first embodiment of the present disclosure. The plasma processing apparatus 1 comprises a main body 10 and a control device 11. The main body 10 comprises a processing vessel 12, a stage 14, an RF (Radio Frequency) power supply (an example of an electromagnetic wave generator) 16, a dielectric window 20, an antenna 30, a gas supply unit 38, and a resonator array structure 100. The main body 10 also includes a central gas injection unit 13. The central gas injection unit 13 is located above the stage 14 and is attached to the central opening of the dielectric window 20. The antenna 30 is located above or above (outside) the processing vessel 12 (dielectric window 20).

[0017] The processing vessel 12 is formed in a substantially cylindrical shape from, for example, aluminum whose surface has been anodized, and provides substantially cylindrical spaces S1 and S2 inside. Space S1 is an example of a reaction chamber and a first space, and space S2 is an example of a processing chamber and a second space. In other words, the processing vessel 12 comprises a first space and a second space for generating plasma. The processing vessel 12 is grounded for safety. The processing vessel 12 also has a side wall 12a and a bottom 12b. The central axis of the side wall 12a is defined as axis Z. The bottom 12b is provided on the lower end side of the side wall 12a. An exhaust port 12h for exhaust is provided in the bottom 12b. The upper end of the side wall 12a is open. The inner wall surface of the side wall 12a faces spaces S1 and S2. That is, the side wall 12a is provided with its inner wall surface facing spaces S1 and S2.

[0018] An opening 12c is formed in the side wall 12a for loading and unloading substrates WP. The opening 12c is opened and closed by a gate valve G.

[0019] A dielectric window 20 is provided at the upper end of the side wall 12a, closing the opening at the upper end of the side wall 12a from above. The lower surface 20a of the dielectric window 20 faces the space S1. That is, the dielectric window 20 is provided with its lower surface 20a (first surface) facing the space S1 (inside the processing container 12).

[0020] Stage 14 is housed within the processing container 12. Stage 14 is positioned to face the resonator array structure 100, which also serves as a showerhead, in the direction of axis Z. The space between Stage 14 and the resonator array structure 100 is space S2. The substrate WP is placed on Stage 14. In other words, Stage 14 is an example of a substrate support configured to support the substrate WP within the processing container 12.

[0021] Stage 14 has a base 14a and an electrostatic chuck 14c. The base 14a is formed in a substantially disc shape from a conductive material such as aluminum. The base 14a is positioned in the processing container 12 such that its central axis substantially coincides with axis Z.

[0022] The base 14a is supported by a cylindrical support portion 48 made of an insulating material and extending in the axial Z direction. A conductive cylindrical support portion 50 is provided on the outer circumference of the cylindrical support portion 48. The cylindrical support portion 50 extends along the outer circumference of the cylindrical support portion 48 from the bottom 12b of the processing container 12 toward the dielectric window 20. An annular exhaust passage 51 is formed between the cylindrical support portion 50 and the side wall 12a. The stage 14 may be made movable in the vertical direction (Z-axis direction) by a drive mechanism (not shown), and the distance between the lower surface of the resonator array structure 100 and the upper surface of the electrostatic chuck 14c may be made changeable. This makes it possible to adjust the energy level by residence time.

[0023] An annular baffle plate 52 with multiple through holes formed in the thickness direction is provided at the top of the exhaust passage 51. Below the baffle plate 52 is the exhaust port 12h described above. An exhaust device 56, which has a vacuum pump such as a turbomolecular pump and an automatic pressure control valve, is connected to the exhaust port 12h via an exhaust pipe 54. The exhaust device 56 can reduce the pressure of spaces S1 and S2 to a desired vacuum level.

[0024] The base 14a functions as a high-frequency electrode. A high-frequency power supply 58 for RF biasing is electrically connected to the base 14a via a feed rod 62 and a matching unit 60. The high-frequency power supply 58 supplies bias power to the base 14a via the matching unit 60 and the feed rod 62 at a predetermined frequency (e.g., 13.56 MHz) suitable for controlling the energy of ions drawn into the substrate WP.

[0025] The matching unit 60 houses a matching circuit for matching the impedance of the high-frequency power supply 58 with the impedance of the load, mainly electrodes, plasma, and processing vessel 12. The matching circuit includes a blocking capacitor for generating self-bias. If RF bias is not used, the high-frequency power supply 58, matching unit 60, and feed rod 62 may be omitted.

[0026] An electrostatic chuck 14c is provided on the upper surface of the base 14a. The electrostatic chuck 14c attracts and holds the substrate WP by electrostatic force. The electrostatic chuck 14c has a substantially disc-shaped outer form and includes an electrode 14d, an insulating film (dielectric film) 14e, and an insulating film (dielectric film) 14f. The electrostatic chuck 14c is positioned on the upper surface of the base 14a such that its central axis substantially coincides with the axis Z. The electrode 14d of the electrostatic chuck 14c is made of a conductive film and is provided between the insulating film 14e and the insulating film 14f. A DC power supply 64 is electrically connected to the electrode 14d via a coated wire 68 and a switch 66. The electrostatic chuck 14c can attract and hold the substrate WP on its upper surface by the electrostatic force generated by the DC voltage applied from the DC power supply 64. The upper surface of the electrostatic chuck 14c is the mounting surface on which the substrate WP is placed and faces the space S2. In other words, the electrostatic chuck 14c is provided with its upper surface, which is the mounting surface, facing the space S2. An edge ring 14b is also provided on the base 14a. The edge ring 14b is positioned to surround the substrate WP and the electrostatic chuck 14c. The edge ring 14b is sometimes called a focus ring.

[0027] A flow path 14g is provided inside the base 14a. Coolant is supplied to the flow path 14g from a chiller unit (not shown) via piping 70. The coolant supplied to the flow path 14g is returned to the chiller unit via piping 72. The temperature of the base 14a is controlled by the circulation of the coolant, whose temperature is controlled by the chiller unit, within the flow path 14g of the base 14a. By controlling the temperature of the base 14a, the temperature of the substrate WP on the electrostatic chuck 14c is controlled via the electrostatic chuck 14c on the base 14a.

[0028] Furthermore, the stage 14 has a pipe 74 formed therein for supplying a heat transfer gas, such as He gas, between the upper surface of the electrostatic chuck 14c and the back surface of the substrate WP.

[0029] The RF power supply 16 is coupled to the antenna 30 and configured to generate a source RF signal (source RF power) for plasma generation via at least one impedance matching circuit. In one embodiment, the source RF signal has a frequency in the range of 3 MHz to 3000 MHz. In one embodiment, the RF power supply 16 may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to the antenna 30. The RF power supply 16 is an example of an electromagnetic wave generator that generates electromagnetic waves for plasma excitation supplied into the processing container 12, as described above, and is an example of a high-frequency power supply. The antenna 30 is an example of an electromagnetic wave supply unit that supplies electromagnetic waves into the processing container 12 via a dielectric.

[0030] The antenna 30 includes one or more coils. In one embodiment, the antenna 30 may include an outer coil and an inner coil arranged coaxially. In this case, the RF power supply 16 may be connected to both the outer coil and the inner coil, or to either the outer coil or the inner coil. In the former case, the same RF generation unit within the RF power supply 16 may be connected to both the outer coil and the inner coil, or separate RF generation units may be connected to the outer coil and the inner coil separately. In one embodiment, the antenna 30 is a planar coil and is formed in a substantially circular spiral shape (planar spiral shape). That is, the antenna 30 is wound in a loop shape. The magnetic field generated by the antenna 30 is in the direction of the axis Z. The opening of the antenna 30 may be circular, elliptical, or polygonal (square, triangle, etc.). The antenna 30 also supplies a magnetic field component perpendicular to the plane on which the multiple resonators 101, described later, are arranged.

[0031] Furthermore, if the antenna 30 includes an outer coil and an inner coil, the outer coil functions as a primary coil to which the RF power supply 16 is connected. In one embodiment, the outer coil is a planar coil and is formed in a substantially circular spiral shape. The inner coil functions as a secondary coil that inductively couples with the primary coil. That is, the inner coil is not connected to the RF power supply 16. In one embodiment, the inner coil is a planar coil and is formed in a substantially circular ring shape. In one embodiment, the inner coil is connected to a variable capacitor, and the direction and magnitude of the current flowing through the inner coil are controlled by controlling the capacitance of the variable capacitor. The outer coil and the inner coil may be placed at the same height or at different heights. In one embodiment, the inner coil is placed at a lower position than the outer coil.

[0032] The gas introduction section is configured to introduce at least one processing gas from the gas supply section 38 into space S1. In one embodiment, the gas introduction section includes a Center Gas Injector (CGI) 13. The Center Gas Injector 13 is located above the stage 14 and the resonator array structure 100 and is attached to a central opening formed in the dielectric window 20. The Center Gas Injector 13 has at least one gas supply port 13a, at least one gas flow path 13b, and at least one gas inlet 13c. The processing gas supplied to the gas supply port 13a passes through the gas flow path 13b and is introduced into space S1 from the gas inlet 13c, where it is excited by electromagnetic waves supplied from the antenna 30 to space S1 via the dielectric window 20 and the resonator array structure 100. As a result, the processing gas is plasma-activated in space S1, and the radicals and unactivated processing gas contained in the plasma are supplied to space S2 through through holes 118 and 133, which will be described later. Furthermore, ions contained in the plasma recombine to form radicals as they pass through the through holes 118 and 133, and are similarly supplied to space S2. Space S2 becomes a high-density radical region, and the substrate WP is processed by these radicals. In addition, as will be described later, the processing gas may be plasmaized on the space S2 side. The gas introduction section may include, in addition to or instead of the central gas injection section 13, one or more side gas injection sections (SGI: Side Gas Injector) attached to one or more openings formed in the side wall 12a.

[0033] The gas supply unit 38 may include at least one gas source 38a and at least one flow controller 38b. In one embodiment, the gas supply unit 38 is configured to supply at least one processing gas to the gas inlet from a corresponding gas source 38a via a corresponding flow controller 38b. Each flow controller 38b may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 38 may include one or more flow modulation devices that modulate or pulse the flow rate of at least one processing gas.

[0034] The resonator array structure 100 is formed by arranging multiple resonators that are capable of resonating with the magnetic field component of electromagnetic waves and whose size is smaller than the wavelength of electromagnetic waves. For example, it is positioned above the opening 12c in the processing container 12, supported by a support member 22. The resonator array structure 100 also includes a through hole 118, which will be described later, that separates space S1 and space S2 and connects space S1 and space S2. In other words, the resonator array structure 100 is an example of a shower head equipped with a through hole 118. Specifically, the resonator array structure 100 is provided between a first space and a second space and is configured to include multiple resonators 101 that are capable of resonating with the magnetic field component of electromagnetic waves, whose size is smaller than the wavelength of electromagnetic waves, and which are arranged in the same plane. The support member 22 may be a sealing structure that seals space S1 and space S2.

[0035] Here, the separation distance between space S1 and space S2 is defined as follows: Separation distance δ of space S1 S1 This is the distance between the lower surface 20a of the dielectric window 20 and the upper surface (the surface facing the lower surface 20a) of the resonator array structure 100. The separation distance δ of space S2. S2 This is the distance between the lower surface of the resonator array structure 100 (the surface facing the upper surface of the substrate WP) and the upper surface of the substrate WP. The upper surface of the resonator array structure 100 is also referred to as the first surface of the resonator array structure 100, and the lower surface of the resonator array structure 100 is also referred to as the second surface of the resonator array structure 100. Furthermore, the distance between the upper and lower surfaces of the resonator array structure 100, i.e., the thickness of the resonator array structure 100, is given by thickness δ. t This means that the first space is the space between the first surface (bottom surface 20a) of the dielectric (dielectric window 20) and the resonator array structure 100, and the second space is the space between the resonator array structure 100 and the substrate support part (stage 14).

[0036] In this embodiment, the plasma processing apparatus 1 has a separation distance δ between the dielectric window 20 and the resonator array structure 100. S1 This is an example of a case where the distance is less than a certain value. Separation distance δ S1The specific value is, for example, 50 mm. That is, in the present embodiment, the distance (separation distance δ S1 ) between the lower surface 20a of the dielectric window (top plate) 20 and the first surface of the resonator array structure 100 is less than 50 mm. In this case, the space S1 between the dielectric window 20 and the resonator array structure 100 has a weak coupling with the antenna 30. On the other hand, the resonator array structure 100 has a strong coupling with the antenna 30, and in the space S2 between the resonator array structure 100 and the substrate WP, plasma is generated together with the second surface side of the resonator array structure 100 that resonates with the electromagnetic wave. Note that the resonator array structure 100 that resonates with the electromagnetic wave has a negative (minus) magnetic permeability as a bulk. That is, the resonator array structure 100 is formed so that the overall magnetic permeability is negative. Also, the separation distance δ S2 in the space S2 is set to a distance equal to or greater than a specific value. The specific value of the separation distance δ S2 is, for example, 50 mm. By setting the separation distance δ S2 to a distance equal to or greater than a specific value, the stability of the plasma generated in the space S2 can be improved.

[0037] In other words, by positioning the resonator array structure 100 within the processing container 12, the electromagnetic waves supplied to space S1 by the antenna 30 can resonate with the multiple resonators of the resonator array structure 100. This resonance between the electromagnetic waves and the multiple resonators allows for efficient supply of electromagnetic waves to space S2 within the processing container 12 and makes the permeability of space S2 negative. When the permeability of space S2 is negative, even if the electron density of the plasma generated in space S2 reaches the cutoff density and the permittivity of space S2 is negative, the refractive index becomes a real number according to equation (1) above, allowing electromagnetic waves to propagate in space S2. This enables the propagation of electromagnetic waves beyond the plasma skin depth, even when the electron density of the plasma generated in space S2 reaches the cutoff density, and the power of the electromagnetic waves is efficiently absorbed by the plasma. As a result, a high-density plasma can be generated over a wide area beyond the plasma skin depth. In other words, according to the plasma processing apparatus 1 of this embodiment, as will be described later, by setting the supply time of the pulsed source RF signal to a specific value or higher, it is possible to stabilize the plasma in space S2 while achieving high density over a wide area.

[0038] Here, the detailed configuration of the resonator array structure 100 will be described with reference to Figures 1 and 2. Figure 2 is a plan view showing an example of the configuration of the support member 22 and the resonator array structure 100 according to this embodiment, viewed from above. In Figure 2, the support member 22 and the resonator array structure 100 are shown in a disc shape.

[0039] The resonator array structure 100 is formed, for example, by arranging multiple resonators 101 such that their longitudinal direction aligns with radial lines extending from the center of the resonator array structure 100. For example, the resonator array structure 100 can be formed by arranging two resonators 101 along eight radial lines spaced at 45-degree intervals. In this case, the multiple resonators 101 are arranged so that their coils 111 face towards the center of the resonator array structure 100, and so that the coils 111 of the outer resonators 101 and the capacitors 112 of the inner resonators 101 are adjacent to each other. That is, the multiple resonators 101 arranged on the inside are arranged at equal intervals on a first circumference, and the multiple resonators 101 arranged on the outside are arranged at equal intervals on a second circumference. The multiple resonators 101 are formed as a single unit as the resonator array structure 100. Furthermore, the resonator array structure 100 may be constructed by forming multiple resonators 101 separately and fitting them into a radial frame or bonding them together. It is also preferable that the substrate WP facing the resonator array structure 100 be positioned in the region where the coils 111 of the multiple resonators 101 arranged outward in the direction of axis Z in Figure 1 exist. In the following description, the resonator array structure 100 may be referred to as a metamaterial, and each of the multiple resonators 101 may be referred to as a metaatom.

[0040] Figure 3 is a cross-sectional view showing an example of a cross-section of a single resonator in the resonator array structure according to the first embodiment. In Figure 3, one of the multiple resonators 101 shown in Figure 2 is used as an example to show a cross-section of a single resonator 101 in the array direction (the direction of the radial lines from the center of the resonator array structure 100). The single resonator 101 is a series resonant circuit consisting of a coil 111 and a capacitor 112, surrounded by a dielectric 115. The magnetic field generated by the antenna 30 is in the direction that penetrates the coil 111.

[0041] The resonator 101 consists of a dielectric 115a, a plate-shaped region inside the dielectric 115, sandwiched between electrodes 116 and 117 of the capacitor 112. A coil 111 is formed on the upper surface of the dielectric 115a where the electrodes 116 are formed. The coil 111 is, for example, a circular flat spiral coil with three turns, and one end is connected to the electrode 116 via a lead portion 113. The other end of the coil 111 penetrates the dielectric 115a through a through-hole 114 and appears on the lower surface of the dielectric 115a where the electrode 117 is formed, and is connected to the electrode 117 via a lead portion 113. In other words, from the perspective of lamination, the coil 111 is made up of stacked single-layer circular flat spiral coils, and the capacitor 112 is made up of stacked two layers of electrodes (metal) and one layer of dielectric. Thus, the resonator 101 can constitute a series resonant circuit with the coil 111, which is a circular flat spiral coil with three turns, and the capacitor 112, which has two layers of electrodes. In other words, resonator 101 is an example of a resonator in a lumped-parameter circuit where the series resonant circuit is.

[0042] Furthermore, a through-hole 118 is provided in the center of the coil 111. The through-hole 118 connects the upper space S1 and the lower space S2 of the resonator array structure 100. In other words, the resonator array structure 100 has a through-hole 118 that penetrates the upper surface and the lower surface. To put it another way, the resonator array structure 100 has a through-hole 118 that penetrates the first surface and the second surface opposite the first surface. The through-hole 118 has, for example, a circular cross-section. The through-hole 118 serves as a path for plasma ignited in space S1 to propagate to space S2. The through-hole 118 also allows the processing gas to pass from space S1 to space S2. That is, the processing gas is supplied from space S1 to space S2, and the plasma ignited in space S1 propagates to space S2 through the through-hole 118. In space S2, as described later, by setting the supply time of the pulsed source RF signal to a specific value or higher, a plasma is stably generated by the resonance of the resonator array structure 100. Space S2 becomes a high-density plasma region containing radicals and ions, and the substrate WP is processed by this plasma.

[0043] Furthermore, the resonator array structure 100 consists of an array of multiple resonators 101, and each of the multiple resonators 101 has a relatively small area compared to the antenna 30 and the substrate WP. Therefore, the resonator array structure 100 can reduce losses compared to the losses caused by electrostatic induction in the internal antenna of an inductively coupled plasma (ICP).

[0044] Furthermore, the resonator array structure 100 may also use a distributed-parameter circuit resonator as the resonator 101. Figure 4 is a plan view showing another example of the configuration of the support member and resonator array structure according to the first embodiment, viewed from above.

[0045] The resonator array structure 100a shown in Figure 4 is formed by arranging multiple resonators 121 in a grid pattern, each resonating with the magnetic field component of an electromagnetic wave and having a size smaller than the wavelength of the electromagnetic wave. Specifically, as shown in Figure 4, the multiple resonators 121 are arranged in a plane parallel to the lower surface 20a of the dielectric window 20 in the flat plate-shaped resonator array structure 100a. In other words, when viewed from the lower surface 20a side, the C-shaped ring members 131 that are transmitted are arranged in a grid pattern so that the C shape is visible. For example, the resonator array structure 100a has an 8x8 arrangement of resonators 121. In this case, the boundaries of each of the multiple resonators 121 are represented as boundaries 125, but in reality, the multiple resonators 121 are formed as a single unit in the resonator array structure 100a. Alternatively, the multiple resonators 121 may be formed separately and fitted into a grid-like frame or bonded to each other to constitute the resonator array structure 100a. Each of the multiple resonators 121 constitutes a series resonant circuit consisting of a capacitor equivalent element and an inductor equivalent element. The series resonant circuit is realized by patterning a conductor on a plane. The magnetic field generated by the antenna 30 is directed through the C-shaped ring member 131.

[0046] Figure 5 is a cross-sectional view showing another example of the cross-section of a single resonator in the resonator array structure according to the first embodiment. In Figure 5, a cross-section of a single resonator 121 is shown as an example, among a plurality of resonators 121 formed as a single unit. As shown in Figures 4 and 5, a single resonator 121 is located within the region enclosed by the boundary 125. In other words, in the example of Figures 4 and 5, the resonator 121 is in a state where two C-shaped ring members 131 are each surrounded by a dielectric 132. The dielectric 132 may be formed such that the thickness from the first C-shaped ring member 131 to the first surface 122 and the thickness from the second C-shaped ring member 131 to the second surface 123 are thinner on the side where the plasma is generated.

[0047] The through-hole 133 connects space S1 and space S2. The through-hole 133 has, for example, a circular cross-section. Similar to the through-hole 118 of the resonator 101 in the resonator array structure 100, the through-hole 133 serves as a path for the plasma ignited in space S1 to propagate to space S2, and also allows the processing gas to pass from space S1 to space S2.

[0048] Furthermore, the resonator array structures 100 and 100a may have a structure having multiple layers. Figure 6 is a cross-sectional view showing an example of a resonator array structure according to the first embodiment. The resonator array structure 100b shown in Figure 6 has a first layer 100b1 and a second layer 100b2. As indicated by the boundary 125, the resonator array structure 100b shown in Figure 6 has multiple resonators 121a and 121b similar to those of the resonator array structure 100a, in the first layer 100b1 and the second layer 100b2, respectively. The cross-section of the resonator array structure 100b corresponds to the cross-section passing through the centers of the multiple resonators 121 of the resonator array structure 100a shown in Figure 4 in the X-axis direction. Note that Figure 6 shows the cross-sections of the resonator 121a of the first layer 100b1 and the resonator 121b of the second layer 100b2. However, as shown in Figures 7 and 8 later, the positions of the resonators 121a and 121b in the first layer 100b1 and the second layer 100b2 may be different. Also, the through-holes 133, which will be described later, are shown only in position with dotted lines.

[0049] Figure 7 is a cross-sectional view showing an example of the AA cross-section of Figure 6. Figure 8 is a cross-sectional view showing an example of the BB cross-section of Figure 6. Figures 7 and 8 show the AA and BB cross-sections of the resonator array structure 100b, respectively. The AA cross-section shows the resonator 121a located in the first layer 100b1, and the BB cross-section shows the resonator 121b located in the second layer 100b2.

[0050] The first layer 100b1 contains, for example, an 8x8 resonator 121a. The resonator 121a includes a ring member 131a. The resonator 121a in the first layer 100b1 corresponds to the resonator 121 in the resonator array structure 100a. The resonator 121a in the first layer 100b1 has a resonant frequency f r1 It is assumed that, at the center of the ring member 131a of each resonator 121a, a through hole 133 is provided that connects space S1 and space S2, similar to each resonator 121a of the resonator array structure 100a. Also, at the intersection of the boundary 125, the through holes 133 provided at the center of the ring member 131b of each resonator 121b of the second layer 100b2 are located.

[0051] The second layer 100b2 contains, for example, a 7x7 resonator 121b. The resonator 121b includes a ring member 131b. The resonator 121b in the second layer 100b2 is arranged in a staggered configuration with the resonator 121a of the first layer 100b1 such that the center of the ring member 131b is located at the intersection of the boundary 125 of the first layer 100b1. The resonator 121b in the second layer 100b2 has a resonant frequency f r2 It is assumed that the ring member 131b of each resonator 121b has a through hole 133 at its center that connects space S1 and space S2, similar to each resonator 121 of the resonator array structure 100a. Note that in Figure 8, the boundaries of each resonator 121b on the second layer 100b2 side are not shown, but the boundaries 125 of each resonator 121a on the first layer 100b1 side are shown, as well as the through hole 133 provided at the center of the ring member 131a of each resonator 121a.

[0052] Furthermore, the multiple resonators 121a and 121b arranged in the first layer 100b1 and the second layer 100b2 are arranged in a direction along the lower surface 20a of the dielectric window 20 (in the direction of a plane parallel to the lower surface 20a). In addition, the resonator array structure 100b may be formed by integrally molding the first layer 100b1 and the second layer 100b2, or they may be molded separately and then bonded together to form a single unit. In this way, the resonator array structure 100b has resonators 121a and 121b with different resonant frequencies arranged in a staggered pattern, which increases the number of resonators 121a and 121b through which the magnetic field passes, and also improves the controllability of the plasma distribution and the plasma density.

[0053] Figure 9 is a plan view showing another example of a single resonator of the resonator array structure according to the first embodiment. The single resonator 121 of the resonator array structures 100a and 100b may further have a plurality of through holes 133a in the area enclosed by the boundary 125, avoiding the C-shaped ring member 131, as shown in the single resonator 121A in Figure 9. The plurality of through holes 133a, like the through hole 133, connect the space S1 that the first surface 122 faces and the space S2 that the second surface 123 faces. In the example in Figure 9, the single resonator 121A has one through hole 133 and four through holes 133a. In the resonator array structure 100b, the through hole 133a of the first layer 100b1 may be placed at the intersection of the boundary 125 on the first layer 100b1 side and shared with the through hole 133 of the second layer 100b2. Thus, the flow rate distribution may be controlled by the diameter, number, or arrangement of the through holes 133, 133a that connect space S1 and space S2.

[0054] Furthermore, as an example of a structure having multiple layers in the resonator array structure 100, the case of a two-layer resonator array structure will be described using Figures 10 to 12. Figure 10 is a cross-sectional view showing an example of the first layer of the two-layer resonator array structure according to the first embodiment. Figure 11 is a cross-sectional view showing an example of the second layer of the two-layer resonator array structure according to the first embodiment. The resonator array structure 100c shown in Figures 10 and 11 has a first layer 100c1 and a second layer 100c2. The resonator array structure 100c shown in Figures 10 and 11 has multiple resonators 101a and 101b, similar to the resonator 101 of the resonator array structure 100, in the first layer 100c1 and the second layer 100c2, respectively. Resonator 101a has a coil 111a and a capacitor 112a. Resonator 101b has a coil 111b and a capacitor 112b.

[0055] The first layer 100c1 is formed, for example, by arranging multiple resonators 101a such that their longitudinal direction follows radial lines radiating from the center of the resonator array structure 100c, similar to the resonator array structure 100. For example, in the first layer 100c1, two resonators 101a are arranged along eight radial lines spaced at 45-degree intervals. In this case, the multiple resonators 101a are arranged so that the coils 111a face towards the center of the resonator array structure 100c, and so that the coils 111a of the outer resonators 101a and the capacitors 112a of the inner resonators 101a are adjacent to each other. That is, the multiple resonators 101a arranged on the inside are arranged at equal intervals on a first circumference, and the multiple resonators 101a arranged on the outside are arranged at equal intervals on a second circumference. Furthermore, the resonators 101a arranged in the first layer 100c1 have a resonant frequency f r1It is assumed that the multiple resonators 101a are formed as a single unit as a resonator array structure 100c or a first layer 100c1. Alternatively, the multiple resonators 101a may be formed separately and fitted into a radial frame or bonded to each other to form the resonator array structure 100c or the first layer 100c1. Furthermore, it is preferable that the substrate WP facing the resonator array structure 100c is positioned in the region where the coils 111a of the multiple resonators 101a arranged outward in the direction of axis Z in Figure 1 exist.

[0056] At the center of the coil 111a of each resonator 101a, a through-hole 118 is provided that connects space S1 and space S2, similar to each resonator 101 of the resonator array structure 100. Furthermore, in the second circumference where the multiple resonators 101a are arranged, the through-holes 118 provided at the center of the coil 111b of the second layer 100c2 are located between the through-holes 118 of each resonator 101a.

[0057] The second layer 100c2 is formed by arranging multiple resonators 101b such that their longitudinal direction follows radial lines from the center of the resonator array structure 100c. For example, in the second layer 100c2, one resonator 101b is arranged at positions corresponding to the spaces between the resonators 101a arranged on the outer side (second circumference) of the multiple resonators 101a of the first layer 100c1. In other words, the resonators 101b arranged at positions corresponding to the spaces between the outer resonators 101a arranged along the eight radial lines of the first layer 100c1 are arranged along radial lines rotated 22.5 degrees from the eight radial lines of the first layer 100c1. That is, the multiple resonators 101b are arranged at equal intervals on the second circumference. Furthermore, the resonators 101b placed in the second layer 100c2 have a resonant frequency f r2It is assumed that the multiple resonators 101b are formed as a single unit as a resonator array structure 100c or a second layer 100c2. Alternatively, the multiple resonators 101b may be formed separately and fitted into a radial frame or bonded to each other to form the resonator array structure 100c or the second layer 100c2. Furthermore, it is preferable that the substrate WP facing the resonator array structure 100c is positioned in the region where the coils 111b of the multiple resonators 101b arranged outward in the direction of axis Z in Figure 1 exist.

[0058] At the center of the coil 111b of each resonator 101b, a through-hole 118 is provided, similar to each resonator 101 of the resonator array structure 100, connecting space S1 and space S2. Furthermore, in the second circumference where the multiple resonators 101b are arranged, the through-hole 118 provided at the center of the coil 111a of the first layer 100c1 is located between the through-holes 118 of each resonator 101b. In addition, in the second layer 100c2, the through-hole 118 provided at the center of the coil 111a of the first layer 100c1 is located at a position corresponding to the first circumference where the multiple resonators 101a inside the first layer 100c1 are arranged.

[0059] Figure 12 is a cross-sectional view showing an example of a CC cross-section of Figures 10 and 11. Figure 12 shows an arc-shaped CC cross-section passing through the centers of the coils 111a and 111b of multiple resonators 101a and 101b located on the outside (second circumference) of the first layer 100c1 and the second layer 100c2 of the resonator array structure 100c. In the CC cross-section, the resonators 101a of the first layer 100c1 and the resonators 101b of the second layer 100c2 are arranged alternately. Through holes 118 are located at the centers of the coils 111a and 111b. Note that the arrangement of the multiple resonators 101a and 101b is not limited to the above arrangement, as long as the coils 111a and 111b do not overlap in the first layer 100c1 and the second layer 100c2.

[0060] Furthermore, the multiple resonators 101a and 101b arranged in the first layer 100c1 and the second layer 100c2 are arranged in a direction along the lower surface 20a of the dielectric window 20 (in the direction of a plane parallel to the lower surface 20a). In addition, the resonator array structure 100c may be formed by integrally molding the first layer 100c1 and the second layer 100c2, or they may be molded separately and then bonded together to form a single unit. In this way, in the resonator array structure 100c, resonators 101a and 101b with different resonant frequencies are arranged so as not to overlap, which increases the number of resonators 101a and 101b through which the magnetic field penetrates, and also improves the controllability of the plasma distribution and the plasma density.

[0061] Refer to Figure 1 again. The control device 11 has a processor, memory, and an input / output interface. The memory stores programs and process recipes, etc. The processor reads and executes programs from the memory, and based on the process recipes stored in the memory, it controls each part of the main unit 10 via the input / output interface.

[0062] For example, when plasma is generated in spaces S1 and S2, the control device 11 controls the resonant frequency f of the multiple resonators 101. r In a target frequency band higher than that, the electromagnetic waves supplied to the space S1, S2 by the antenna 30 are controlled to resonate with the multiple resonators 101. Here, the resonant frequency f r This refers to, for example, the transmission characteristic values ​​of multiple resonators 101 (for example, S 21 This is the frequency at which the value () becomes a local minimum.

[0063] The frequency of the electromagnetic waves supplied to the space S1 and S2 by the antenna 30 is the resonant frequency f of the multiple resonators 101. r (For example, when it matches approximately 68 MHz), the S of multiple resonators 101 21 The value becomes a minimum, and resonance occurs between the electromagnetic wave and the multiple resonators 101. The resonance between the electromagnetic wave and the multiple resonators 101 occurs at the resonant frequency f of the multiple resonators 101. rIt is maintained even in a predetermined frequency band higher than (for example, about 2.4 MHz). Resonant frequency f of multiple resonators 101 r In a predetermined frequency band higher than this, the resonance between the electromagnetic wave and the multiple resonators 101 makes both the permittivity and permeability of the spaces S1 and S2 negative. Therefore, as can be seen from equation (1) above, propagation of electromagnetic waves in spaces S1 and S2 becomes possible. The target frequency band of this embodiment is the resonant frequency f of the multiple resonators 101. r It is set to a predetermined frequency band higher than (for example, about 2.4 MHz). The target frequency band is, for example, the resonant frequency f of the multiple resonators 101. r It is preferable that it be within 0.05 times.

[0064] Regarding the propagation of electromagnetic waves through multiple resonators, the relationship between resonant frequency and refractive index, dielectric constant, and permeability has been reported, for example, by DRSmith, DCVier, Th. Koschny, and CMSoukoulis et al. in "Electromagnetic parameter retrieval from inhomogeneous metamaterials" in "PHYSICAL REVIEW E 71, 036617 (2005)".

[0065] Thus, the resonant frequencies f of the multiple resonators 101 r By resonating the electromagnetic waves with the multiple resonators 101 in a target frequency band higher than the target frequency band, the propagation of electromagnetic waves becomes possible beyond the plasma skin depth even when the electron density of the plasma reaches the cutoff density. Therefore, the power of the electromagnetic waves can be efficiently absorbed by the plasma. As a result, a high-density plasma can be generated over a wide range beyond the plasma skin depth. That is, according to the plasma processing apparatus 1 of this embodiment, the resonant frequency f of the multiple resonators 101 r By causing electromagnetic waves to resonate with multiple resonators 101 in a higher target frequency band, it is possible to achieve high-density plasma over a wide area.

[0066] [Circuit model of spaces S1, S2 and resonator array structure 100] Next, the circuit models of spaces S1, S2 and the resonator array structure 100 will be described using Figures 13 to 15. Figure 13 is a diagram showing an example of the circuit model of space S1 and the resonator array structure. The circuit model 140 shown in Figure 13 is a circuit model that includes the RF power supply 16, the matching unit 16d, and the antenna 30, as well as space S1 and the resonator array structure 100 in the internal space of the processing container 12. In other words, the circuit model 140 corresponds to a power transmission system composed of a power transmission unit and a power receiving unit. In the power transmission system, the power transmission unit corresponds to the RF power supply 16, the matching unit 16d, and the antenna 30. The power receiving unit corresponds to the resonator array structure 100. The same applies even if the resonator array structure 100 is a resonator array structure 100a.

[0067] In circuit model 140, the power transmission circuit consists of an RF power supply 16, a matching circuit 16d, and an antenna 30 connected in series. In circuit model 140, the RF power supply 16 includes, for example, an AC (Alternating Current)-DC (Direct Current) converter 16a, a DC-DC converter 16b, and an inverter 16c. The AC-DC converter 16a converts AC, such as from commercial power, to DC and outputs it to the DC-DC converter 16b. The DC-DC converter 16b converts the DC input from the DC-DC converter 16b into DC of the voltage required by the inverter 16c and outputs it to the inverter 16c. The inverter 16c generates a source RF signal from the input DC and outputs it to the antenna 30 via the matching circuit 16d. The source RF signal has a frequency in the range of 3MHz to 3000MHz. When using the resonator array structure 100, the source RF signal frequency is generally below 300 MHz, for example, 13.56 MHz, 27.12 MHz, 40.68 MHz, 60 MHz, and 68 MHz, since the resonator 101 is a lumped-parameter circuit resonator. When using the resonator array structures 100a and 100b, the source RF signal frequency is generally above 300 MHz, for example, 2.45 GHz, since the resonator 121 is a distributed-parameter circuit resonator.

[0068] The matching circuit 16d, for example, has a variable capacitor and performs matching (impedance matching) between the output of the inverter 16c and the input of the antenna 30. The matching circuit 16d may also use matching circuits such as an inverted L-type or a π-type. Furthermore, when the matching circuit 16d is fed to the resonator array structure 100 by magnetic field resonant coupling, it may function as a resonant capacitor that forms an LC resonant circuit together with the antenna 30. Additionally, when the matching circuit 16d is fed to the resonator array structure 100 by electromagnetic phase-shifting coupling (magnetic field phase-shifting coupling), it may not function as a resonant capacitor but as a matching circuit that performs matching.

[0069] The antenna 30 and the resonator array structure 100 are coupled by the magnetic field H generated by the antenna 30. The magnetic field H generated by the antenna 30 is supplied so as to penetrate the coils 111 of the multiple resonators 101 of the resonator array structure 100 through the dielectric window 20 and space S1. The multiple resonators 101 of the resonator array structure 100 resonate due to the magnetic field H, exciting plasma in space S1 and / or space S2.

[0070] Antenna 30 has an inductance L a and resistor R a It is represented as a series connection of . In circuit model 140, plasma P in space S1. S1 (The donut-shaped plasma P described later) S1 ) is assumed to be generated, and the inductance L p and impedance Z p This is represented as an equivalent circuit where the elements are connected in series. The inductance L of space S1. p The inductance L of antenna 30 is a They are coupled with mutual inductance M1. The relationship between the coupling coefficient k1 and the mutual inductance M1 is k1 = M1√(L a ·L pThere is a relationship between mutual inductance M1 and coupling coefficient k1, and there is a proportional relationship between mutual inductance M1 and coupling coefficient k1. In other words, if the mutual inductance M1 is large, the coupling coefficient k1 will also be large. That is, the larger the coupling coefficient between space S1 and the power transmission coil (antenna 30), the greater the electromagnetic induction coupling and the easier it is for power to be shared.

[0071] The resonator array structure 100 of circuit model 140 has an inductance L m1 ,L m2 , wiring resistance R m and capacitance C m These are connected in series, forming a series resonant circuit. Also, plasma P m This is the geometric inductance L, which is determined by the shape of the plasma current. gm , and the plasma impedance Z pm These are connected in series. Furthermore, antenna 30 and inductance L m1 The mutual inductance between them is represented by the mutual inductance M2, and the inductance L m2 and geometric inductance L gm The mutual inductance between them is represented by the mutual inductance M3. In other words, in circuit model 140, the inductance L of the resonator array structure 100 is m1 The inductance L of antenna 30 is a They are coupled with mutual inductance M2. Also, in circuit model 140, the inductance L of the resonator array structure 100 m2 Plasma P m (Plasma P by metamaterial described later) m ) Geometric inductance L gm It is coupled with mutual inductance M3. When current flows through antenna 30, the resonator array structure 100, which is coupled with antenna 30 by mutual inductance M2, receives current I m A plasma P flows through it and is coupled with the resonator array structure 100 by mutual inductance M3. m Current I in the equivalent circuit pm A current flows. Here, controlling the permeability μ and permittivity ε of the plasma by LC resonance of the resonator array structure 100 is possible with respect to the plasma P m The impedance Zpm This corresponds to controlling the mutual inductances M2, M3 and the coupling coefficients k2, k3, as shown in equations (2) and (3) below. k² = M²√(L a ·L m1 ) ···(2) k3 = M3√(L m2 ·L gm ) ···(3)

[0072] Figure 14 shows an example of a circuit model during plasma generation. The circuit model 141 shown in Figure 14 has a separation distance δ S1 This circuit model represents the case where the coupling between space S1 and antenna 30 weakens and the coupling between the resonator array structure 100 and antenna 30 strengthens when the distance is short (for example, less than 50 mm). In other words, circuit model 141 represents the case where the coupling coefficient k2 is greater than the coupling coefficient k1.

[0073] As shown in circuit model 141 and Figure 1, the antenna 30 corresponds to the external coil of the ICP coil in terms of positional relationship and propagates electromagnetic waves to the resonator array structure 100. The resonator array structure 100 corresponds to the internal coil in an internal antenna type ICP coil. Since the source RF signal is supplied to the antenna 30 from the RF power supply 16 via the matching unit 16d, the antenna 30 and the space S1 directly below the dielectric window 20 resonate, and a resonant current I is generated in the antenna 30. RF It plays.

[0074] During plasma generation, a sheath is formed in the dielectric window 20 and the resonator array structure 100. The space S1 between the dielectric window 20 and the resonator array structure 100 is the separation distance δ S1 Because the coupling is insufficient relative to the thickness of the sheath, a weak coupling occurs, and a donut-shaped plasma is not generated directly below the dielectric window 20, resulting in a weak plasma P S1Either a plasma is generated, or no plasma is generated. Since a donut-shaped plasma is not generated in space S1, the electromagnetic waves propagate within the processing container 12. When the resonant frequencies of the multiple resonators 101 of the resonator array structure 100 match the frequency of the source RF signal, the multiple resonators 101 of the resonator array structure 100 resonate. At this time, the control device 11 controls the power and power frequency of the RF power supply 16 so that the mutual inductance M2 becomes magnetic field resonant coupling. When the multiple resonators 101 of the resonator array structure 100 resonate, a plasma P due to metamaterial is generated in the lower space (space S2) of the resonator array structure 100. m This is generated. In space S2, plasma P is generated by metamaterials. m This generates a metamaterial plasma (plasma P). In other words, a high-density plasma, the metamaterial plasma (plasma P), is generated in space S2. The metamaterial plasma is a plasma that includes the plasma (plasma metamaterial state) generated in the resonator array structure 100. Furthermore, since plasma ignition occurs in space S1 directly below the dielectric window 20, damage to the substrate WP during plasma ignition can be suppressed. The resonator array structure 100 also functions as a metamaterial screen that focuses the magnetic field H.

[0075] The metamaterial plasma (plasma P) transforms space S2 into a high-density plasma region, and the substrate WP is processed by this high-density plasma (ions and radicals). Furthermore, since the resonator array structure 100 acts as both a plasma source and a showerhead, the plasma density can be increased, and the energy efficiency (plasma input energy / supplied energy) can be improved. In addition, since the resonator array structure 100, which serves as the plasma source, can be brought close to the substrate WP, the high-density plasma can be controlled by the position of the resonator array structure 100 (arrangement of the multiple resonators 101). In other words, in this embodiment, during plasma (ion and radical) processing, it is possible to suppress the diffusion of plasma directly above the substrate WP while improving the in-plane uniformity of the substrate WP.

[0076] Figure 15 shows another example of a circuit model of space S1 and a resonator array structure. In the case of resonator array structure 100b, the circuit model 142 shown in Figure 15 corresponds to the first layer 100b1 and the second layer 100b2. In circuit model 142, the resonator array structure 100 of circuit model 140 is replaced by the first layer 100b1 and the second layer 100b2 of resonator array structure 100b.

[0077] The first layer 100b1 of circuit model 142 has an inductance L m1a ,L m2a , wiring resistance R ma and capacitance C ma These are connected in series, forming a series resonant circuit. Also, plasma P ma This is the geometric inductance L, which is determined by the shape of the plasma current. gma , and the plasma impedance Z pma These are connected in series. Furthermore, antenna 30 and inductance L m1a The mutual inductance between them is represented by the mutual inductance M2, and the inductance L m2a and geometric inductance L gma The mutual inductance between them is expressed as mutual inductance M3. The relationship between mutual inductances M2, M3 and coupling coefficients k2, k3 is expressed by the following equations (4) and (5). k² = M²√(L a ·L m1a ) ···(4) k3 = M3√(L m2a ·L gma ) ···(5)

[0078] In other words, in circuit model 142, the inductance L of the first layer 100b1 m1a The inductance L of antenna 30 is a It is coupled with a coupling coefficient k2. Also, in circuit model 142, the inductance L of the first layer 100b1 m2a Plasma P ma (Plasma P by metamaterials) ma ) Geometric inductance L gmais coupled with a coupling coefficient k3. When a current flows through the antenna 30, a current I ma flows through the first layer 100b1 that is coupled with the antenna 30 with a coupling coefficient k2, and a current I ma flows through the equivalent circuit of the plasma P pma here. Controlling the magnetic permeability μ and the dielectric constant ε of the plasma by the LC resonance of the first layer 100b1 corresponds to controlling the impedance Z ma of the plasma P pma .

[0079] The second layer 100b2 of the circuit model 142 has an inductance L m1b , L m2b , a wiring resistance R mb and a capacitance C mb connected in series, forming a series resonance circuit. Also, the plasma P mb has a geometric inductance L<00><000< gmb determined by the shape of the plasma current, and the impedance Z pmb of the plasma connected in series. Further, the mutual inductance between the antenna 30 and the inductance L m1b is represented by a mutual inductance M4, and the mutual inductance between the inductance L m2b and the geometric inductance L gmb is represented by a mutual inductance M5. The mutual inductances M4, M5 and the coupling coefficients k4, k5 have the relationships represented by the following equations (6), (7). k4 = M4 / √(L a · L m1b ) ···(6) k5 = M5 / √(L m2b · L gmb ) ···(7)

[0080] That is, in the circuit model 142, the inductance L m1b of the second layer 100b2 is coupled with the inductance L a of the antenna 30 with a coupling coefficient k4. Also, in the circuit model 142, the inductance L m2b of the second layer 100b2 is the plasma P mb(Plasma P by metamaterials) mb ) Geometric inductance L gmb It is coupled with a coupling coefficient k5. When current flows through antenna 30, the second layer 100b2, which is coupled with antenna 30 with a coupling coefficient k4, receives current I mb The plasma flows and is coupled with the second layer 100b2 with a coupling coefficient k5. mb Current I in the equivalent circuit pmb This flows. Here, controlling the permeability μ and dielectric constant ε of the plasma at the LC resonance of the second layer 100b2 is possible with respect to the plasma P mb The impedance Z pmb This corresponds to controlling the resonant frequencies f of the first layer 100b1 and the second layer 100b2, respectively. r1 ,f r2 If the parameters differ, it is thought that the surface on which the plasma is generated can be controlled by the frequency of the source RF signal.

[0081] In circuit model 142, the first layer 100b1 and the second layer 100b2 of the resonator array structure 100b were explained as an example, but the same applies to the first layer 100c1 and the second layer 100c2 of the resonator array structure 100c. In other words, the resonator array structure 100b has a configuration in which multiple resonators 121a and 121b are each present in the first layer 100b1 and the second layer 100b2, but the configuration of the resonator array structure 100c may also be used. In this case, the resonator array structure 100c may have a configuration in which multiple resonators 101a and 101b are each present in the first layer 100c1 and the second layer 100c2, instead of multiple resonators 121a and 121b.

[0082] [Simulation results when the separation distance between space S1 and space S2 is long] Next, using Figures 16 to 20, we can see the case where the separation distance is long (separation distance δ S1 ,δ S2The simulation results for the case where the distance is 50 mm or more will be explained. Figures 16 to 20 show examples of simulation results for plasma generation when the separation distance between space S1 and space S2 is long. In Figures 16 to 20, the simulation conditions are as follows: the processing gas is Ar gas, the pressure is 50 mTorr (6.67 Pa), and the frequency and power of the source RF signal are 13.56 MHz and 350 W at the resonator array structure 100, 100 c. Also, in Figures 16 to 20, the electron density [1 / m] is shown as a simulation result. 3 The distribution of ] is shown in the contour plot, and the right half of the cylindrical cross-section of the processing container 12 is shown. In the simulation, the relative permeability μ of the first layer 100c1 in the resonator array structure 100c r1 Set the relative permeability μ of the second layer 100c2. r2 This is set. Also, although not shown as an example in the simulation, the relative permeability μ of the first layer 100b1 is similarly set for the resonator array structure 100b. r1 Set the relative permeability μ of the second layer 100b2. r2 You can set this.

[0083] The simulation result 150 in Figure 16 shows the separation distance δ using the resonator array structure 100. S1 This is the simulation result when the distance is 151a. The distance 151a is, for example, 75 mm. The relative permeability of the resonator array structure 100 is set to -0.6. In simulation result 150, the electron density is high in a disk shape in the space S1 between the dielectric window 20 and the resonator array structure 100. Plasma is generated in the areas with high electron density. Argon radicals are generated in proportion to the electron density. * The molar concentration of changes. Also, the generated Ar * These particles are distributed to the space S2 through the through-holes 118 of the resonator array structure 100 and also reach the substrate WP.

[0084] The simulation results 152-155 in Figures 17-20 show the separation distance δ using the resonator array structure 100c. S1This is the simulation result when the distance is 151b. The distance 151b is, for example, 65 mm. In the simulation result 152 in Figure 17, the relative permeability μ of the first layer 100c1 is r1 Set to 1, and the relative permeability μ of the second layer 100c2 r2 The value is set to -0.6. In simulation result 152, a stable plasma is generated in space S1.

[0085] In the simulation result 153 in Figure 18, the relative permeability μ of the first layer 100c1 is r1 Set to -0.6, and the relative permeability μ of the second layer 100c2 r2 This is set to 1. In simulation result 153, a stable plasma is generated in space S1, where the central part of the resonator array structure 100c is denser than in simulation result 152.

[0086] In the simulation result 154 in Figure 19, the relative permeability μ of the first layer 100c1 is r1 Set to 1, and the relative permeability μ of the second layer 100c2 r2 The value is set to 1. In simulation result 154, a stable, donut-shaped plasma is generated in space S1. Furthermore, in simulation result 154, the resonators 101a and 101b of the first layer 100c1 and the second layer 100c2 are not resonating, so it is considered to be an inductively coupled plasma.

[0087] In the simulation result 155 in Figure 20, the relative permeability μ of the first layer 100c1 is r1 Set to -0.6, and the relative permeability μ of the second layer 100c2 r2 The value is set to -0.6. In simulation result 155, a stable plasma with a more uniform distribution is generated in space S1 than in simulation result 152.

[0088] As described above, in simulation results 152-155, the electron density is high in a disk shape in the space S1 between the dielectric window 20 and the resonator array structure 100c. Plasma is generated in the areas of high electron density. Argon radicals, called Ar, are generated in proportion to the electron density. * The molar concentration of changes. Also, the generated Ar * The plasma is distributed to space S2 through the through-holes 118 of the resonator array structure 100c and reaches the substrate WP. Furthermore, comparing simulation results 152 and 154 with simulation results 153 and 155, it can be seen that in plasma generation in space S1, the resonance of each resonator 101a of the first layer 100c1 contributes to the generation of high-density plasma. Note that simulation results 154 and 155 correspond to the case where the relative permeability of the first layer 100c1 and the second layer 100c2 are the same value, and therefore the same relative permeability is set in the resonator array structure 100. It is also expected that similar results to simulation results 150, 152-155 for resonator array structures 100a and 100b will be obtained for resonator array structures 100a and 100b. For resonator array structures 100a and 100b, the simulation conditions are as follows: the processing gas is Ar gas at a pressure of 50 mTorr (6.67 Pa), and the source RF signal frequency and power are 2.45 GHz and 350 W.

[0089] [Simulation results when the separation distance of space S1 is short and the separation distance of space S2 is long] Next, using Figures 21 to 24, consider the case where the separation distance of space S1 is short and the separation distance of space S2 is long (separation distance δ S1 less than 50 mm, separation distance δ S2The simulation results for the case where the distance is 50 mm or more will be explained. Figures 21 to 24 show an example of the simulation results of plasma generation when the separation distance of space S1 is short and the separation distance of space S2 is long. In Figures 21 to 24, the simulation conditions are as follows: the processing gas is Ar gas, the pressure is 50 mTorr (6.67 Pa), and the frequency and power of the source RF signal are 13.56 MHz and 350 W in the resonator array structure 100c. Also, in Figures 21 to 24, the simulation results show the right half of the cylindrical cross-section of the processing vessel 12.

[0090] The simulation results 157-160 in Figures 21-24 show the separation distance δ using the resonator array structure 100c. S1 This is the simulation result when the distance is set to 156. A distance of 156 is, for example, 35 mm. In the simulation result 157 in Figure 21, the relative permeability μ of the first layer 100c1 is r1 Set to -0.2, and the relative permeability μ of the second layer 100c2 r2 The value is set to -0.6. In simulation result 157, a high-density, stable plasma is generated in space S2.

[0091] In the simulation result 158 ​​in Figure 22, the relative permeability μ of the first layer 100c1 is r1 Set to -0.6, and the relative permeability μ of the second layer 100c2 r2 The value is set to -0.2. In simulation result 158, a high-density, stable plasma is generated in space S2.

[0092] In the simulation result 159 in Figure 23, the relative permeability μ of the first layer 100c1 is r1 Set to 1, and the relative permeability μ of the second layer 100c2 r2 The value is set to -0.6. In simulation result 159, a high-density, stable plasma is generated in space S2.

[0093] In the simulation result 160 in Figure 24, the relative permeability μ of the first layer 100c1 is r1Set to 1, and the relative permeability μ of the second layer 100c2 r2 This is set to 1. In simulation result 160, a stable plasma with a lower density than that in simulation results 157-159 is generated in space S2. Furthermore, in simulation result 160, the resonators 101a and 101b of the first layer 100c1 and the second layer 100c2 are not resonating, so it is considered to be an inductively coupled plasma.

[0094] As described above, in simulation results 157-160, the electron density is high in a disk shape in the space S2 between the resonator array structure 100c and the substrate WP, and plasma is generated in the areas of high electron density. The processing gas is supplied to space S2 through the through hole 118, and plasma is stably generated in space S2. Furthermore, from simulation results 157-160, it can be seen that in the plasma generation in space S2, the resonance of each resonator 101b of the second layer 100c2 contributes to the generation of high-density plasma. In simulation result 160, the relative permeability of the first layer 100c1 and the second layer 100c2 are the same value, and each resonator 101a, 101b is in a non-resonant state, so the plasma ignited in space S1 propagates to space S2 through the through hole 118. In space S2, the plasma propagated from space S1 becomes a stable plasma with a lower density than that in simulation results 157-159. Simulation result 160 is equivalent to the case where the relative permeability of the first layer 100c1 and the second layer 100c2 are the same value in the resonator array structure 100. It is also expected that the same results as simulation results 157-160 for the resonator array structure 100c will be obtained for the resonator array structure 100b. In the case of the resonator array structure 100b, the simulation conditions are Ar gas as the processing gas, pressure of 50 mTorr (6.67 Pa), and source RF signal frequency and power of 2.45 GHz and 350 W. Furthermore, the resonator array structure 100a is equivalent to the case where the relative permeability of the first layer 100b1 and the second layer 100b2 of the resonator array structure 100b are the same value.

[0095] [Relationship between the separation distance between space S1 and space S2 and the plasma generation space] Next, the relationship between the separation distance between spaces S1 and S2 and the plasma generation space will be explained using Figures 25 and 26. Figure 25 is a diagram showing an example of the relationship between the power supply frequency, the separation distance between spaces S1 and S2, and the plasma generation space in a single-layer resonator array structure. Table 170 shown in Figure 25 summarizes the conditions for whether high-density plasma can be generated in single-layer resonator array structures 100 and 100a.

[0096] Table 170 includes items such as "Pattern," "No.," "Power Frequency F," "Transmission Coil," "Space S1," "Metamaterial," "Space S2," and "High-Density Plasma Generation Feasibility." "Pattern" indicates the classification pattern for each condition. Pattern PS11 is a pattern in which the space where plasma is generated is space S1 (upper space) in a single-layer resonator array structure 100,100a. Pattern PS12 is a pattern in which the space where plasma is generated is space S2 (processing chamber) in a single-layer resonator array structure 100,100a.

[0097] "No." is an identifier that identifies each combination of conditions. "Power supply frequency F" indicates the frequency of the source RF signal supplied from the RF power supply 16. "F0" is the resonant frequency f of each resonator 101,121 of the resonator array structure 100,100a. r1 This indicates the frequency at which it does not resonate. "F1" is the resonant frequency f of each resonator 101,121. r1 This indicates the frequency at which it resonates. In the explanation of Figures 25 and 26, the power supply frequencies F0, F1, F2 and the resonant frequency f are used. r1 ,f r2This will differ between the resonator array structures 100, 100c and the resonator array structures 100a, 100b. The "transmission coil" indicates whether the mutual inductance M1 between the matched antenna 30 and space S1 is loosely coupled or tightly coupled. Loose coupling occurs when the coupling coefficient k is k << 1, and tight coupling occurs when the coupling coefficient k is approximately equal to 1. The larger the coupling coefficient between space S1 and the antenna 30, i.e., the transmission coil, the greater the electromagnetic induction coupling, and the easier it is to supply power.

[0098] "Space S1" is the separation distance δ of space S1. S1 A "○" indicates that the length is 50 mm or more, and a "×" indicates that it is less than 50 mm. "Metamaterial" refers to the resonant frequency f of each resonator 101, 121 of the resonator array structure 100, 100a. r1 This indicates whether or not resonance is occurring. "Space S2" is the separation distance δ of space S2. S2 A value of 50 mm or more is indicated by "○", and a value of less than 50 mm is indicated by "×". "High-density plasma generation feasibility" indicates whether high-density plasma can be generated in each of the spaces S1 and S2. In "High-density plasma generation feasibility", in each space S1 and S2, "ICP" indicates that inductively coupled plasma is generated, "◎" indicates that high-density plasma (metamaterial plasma) is generated, and "×" indicates that stable high-density plasma cannot be generated.

[0099] From Table 170, it can be seen that if space S1 is to be used as a plasma generation space, then patterns PS11, No. A1, A3, and A4 should be used. In the case of No. A1, the power supply frequency is F0, the coupling coefficient is k1, tight coupling occurs directly below the top plate, and the separation distance δ of space S1 is... S1 The distance is 50 mm or more, each resonator 101, 121 is non-resonant, and the separation distance δ in space S2 is δ S2 The condition is that the size can be 50 mm or more, or less than 50 mm. In the case of No. A1, an inductively coupled plasma is generated in space S1, but a stable, high-density plasma is not generated in space S2.

[0100] In the case of No. A3, the power supply frequency is F1, the coupling coefficient is k1, and it is tightly coupled directly below the top plate, with a separation distance δ in the space S1.S1 The diameter is 50 mm or more, and each resonator 101, 121 has a resonant frequency f r1 Resonance ("Resonance (@ fr1 )」), separation distance δ in space S2 S2 The condition is that the length is less than 50 mm. In the case of No. A3, a high-density plasma (metamaterial plasma) is generated in space S1, but a stable high-density plasma is not generated in space S2.

[0101] In the case of No. A4, the power frequency is F1, the coupling coefficient is k1, and it is tightly coupled directly below the top panel, with a separation distance δ in the space S1. S1 The diameter is 50 mm or more, and each resonator 101, 121 has a resonant frequency f r1 Resonance ("Resonance (@ fr1 )」), separation distance δ in space S2 S2 The condition is that the thickness is 50 mm or more. In the case of No. A4, a high-density plasma (metamaterial plasma) is generated in space S1, but a stable high-density plasma is not generated in space S2.

[0102] On the other hand, if we want space S2 to be a plasma generation space, we can use patterns PS12, No. A2 and A5. In the case of No. A2, the power supply frequency is F0, the coupling coefficient is k1, loose coupling occurs directly below the top plate, and the separation distance δ is in space S1. S1 The distance is less than 50 mm, each resonator 101, 121 is non-resonant, and the separation distance δ in space S2 is δ S2 The condition is that the gap is 50 mm or larger. In the case of No. A2, a stable, high-density plasma is not generated in space S1, while an inductively coupled plasma is generated in space S2.

[0103] In the case of No. A5, the power supply frequency is F1, the coupling coefficient is k1, and the coupling is loosely coupled directly below the top panel, with a separation distance δ in the space S1. S1 The diameter is less than 50 mm, and each resonator 101, 121 has a resonant frequency f r1 Resonance ("Resonance (@ fr1 )」), separation distance δ in space S2 S2The condition is that the gap is 50 mm or larger. In the case of No. A5, a stable high-density plasma is not generated in space S1, but a high-density plasma (metamaterial plasma) is generated in space S2. In both cases No. A2 and A5, if plasma is generated in space S2, the plasma propagates to space S2 after plasma ignition in space S1. In addition, in No. A6, a stable high-density plasma is not generated in either space S1 or S2.

[0104] Figure 26 shows an example of the relationship between the power supply frequency, the separation distance between spaces S1 and S2, and the plasma generation space in a two-layer resonator array structure. Table 171 shown in Figure 26 summarizes the conditions for the generation of high-density plasma in the two-layer resonator array structures 100b and 100c. Pattern PS21 in Table 171 is a pattern in which the plasma is generated in space S1 (upper space) in the two-layer resonator array structures 100b and 100c. Pattern PS22 is a pattern in which the plasma is generated in space S2 (processing chamber) in the two-layer resonator array structures 100b and 100c. The other items are the same as in Table 170, except that "Power supply frequency F" is set to "F2" and the resonant frequency f of each resonator 121b and 101b. r2 A resonant frequency is added. Also, in the "metamaterial", each resonator 121b, 101b has a resonant frequency f r2 The question of whether or not resonance is occurring is added. Additionally, under "High-density plasma generation feasibility," a "△" is added to indicate that although it is a metamaterial plasma, the distance between the resonating layer and the plasma generation space is large, resulting in the generation of a lower-density metamaterial plasma than that indicated by "◎".

[0105] From Table 171, it can be seen that if space S1 is to be used as a plasma generation space, then patterns PS21, No. B1, B3, B4, B6, and B7 should be used. In the case of No. B1, the power supply frequency is F0, the coupling coefficient is k1, tight coupling occurs directly below the top plate, and the separation distance δ of space S1 is δ S1The distance is 50 mm or more, the resonators 121a, 101a, 121b, and 101b of the first layer 100b1, 100c1 and the second layer 100b2, 100c2 are non-resonant, and the separation distance δ of space S2 is 50 mm or more, the resonators 121a, 101a, 121b, and 101b of the first layer 100b1, 100c1 and the resonators 101b2, 100c2 are non-resonant, and the separation distance δ of space S2 is 50 mm or more, the distance is 50 mm or more, the resonators 12 S2 The condition is that the size can be 50 mm or more, or less than 50 mm. In the case of No. B1, an inductively coupled plasma is generated in space S1, but a stable, high-density plasma is not generated in space S2.

[0106] In the case of No. B3, the power supply frequency is F1, the coupling coefficient is k1, and it is tightly coupled directly below the top plate, with a separation distance δ in the space S1. S1 The thickness is 50 mm or more, and the resonators 121a and 101a of the first layer 100b1 and 100c1 have a resonant frequency f r1 Resonance ("Resonance (@ fr1 )」), separation distance δ in space S2 S2 The condition is that the length is less than 50 mm. In the case of No. B3, a high-density plasma (metamaterial plasma) is generated in space S1, but a stable high-density plasma is not generated in space S2.

[0107] In the case of No. B4, the power supply frequency is F1, the coupling coefficient is k1, and it is tightly coupled directly below the top plate, with a separation distance δ in the space S1. S1 The thickness is 50 mm or more, and the resonators 121a and 101a of the first layer 100b1 and 100c1 have a resonant frequency f r1 Resonance ("Resonance (@ fr1 )」), separation distance δ in space S2 S2 The condition is that the thickness is 50 mm or more. In the case of No. B4, a high-density plasma (metamaterial plasma) is generated in space S1, but a stable high-density plasma is not generated in space S2.

[0108] In the case of No. B6, the power supply frequency is F2, the coupling coefficient is k1, and it is tightly coupled directly below the top plate, with a separation distance δ in the space S1. S1 The thickness is 50 mm or more, and the resonators 121b and 101b of the second layer 100b2 and 100c2 have a resonant frequency f r2 Resonance ("Resonance (@ fr2 )」), separation distance δ in space S2 S2The condition is that the distance is less than 50 mm. In the case of No. B6, an inductively coupled plasma is generated in space S1, but a stable, high-density plasma is not generated in space S2.

[0109] In the case of No. B7, the power supply frequency is F2, the coupling coefficient is k1, and it is tightly coupled directly below the top plate, with a separation distance δ in the space S1. S1 The thickness is 50 mm or more, and the resonators 121b and 101b of the second layer 100b2 and 100c2 have a resonant frequency f r2 Resonance ("Resonance (@ fr2 )」), separation distance δ in space S2 S2 The condition is that the gap is 50 mm or larger. In the case of No. B7, inductively coupled plasma is generated in space S1, but stable, high-density plasma is not generated in space S2.

[0110] On the other hand, if we want space S2 to be a plasma generation space, we can use patterns PS22, No. B5 and B8. In the case of No. B5, the power supply frequency is F1, the coupling coefficient is k1, loose coupling occurs directly below the top plate, and the separation distance δ is in space S1. S1 If the length is less than 50 mm, the resonators 121a and 101a of the first layer 100b1 and 100c1 have a resonant frequency f r1 Resonance ("Resonance (@ fr1 )」), separation distance δ in space S2 S2 The condition is that the thickness is 50 mm or more. In the case of No. B5, a stable, high-density plasma is not generated in space S1, and a metamaterial plasma (marked with a triangle) is generated in space S2.

[0111] In the case of No. B8, the power supply frequency is F2, the coupling coefficient is k1, resulting in loose coupling directly below the top panel, and the separation distance δ is in the space S1. S1 If the diameter is less than 50 mm, the resonators 121b and 101b of the second layer 100b2 and 100c2 have a resonant frequency f r2 Resonance ("Resonance (@ fr2 )」), separation distance δ in space S2 S2The condition is that the distance is 50 mm or more. In the case of No. B8, a stable high-density plasma is not generated in space S1, but a high-density plasma (metamaterial plasma) is generated in space S2. In both cases No. B5 and B8, if plasma is generated in space S2, the plasma propagates to space S2 after plasma ignition in space S1. Also, in No. B2 and B9, a stable high-density plasma is not generated in either space S1 or S2.

[0112] [Control of plasma generation space by plasma generation time] Next, we will explain the control of the plasma generation space by plasma generation time using Figure 27. In the simulation results in Figures 21 to 24, the separation distance δ of space S1 S1 When the distance is less than 50 mm, the plasma generated in space S2 is generated by the plasma ignited in space S1 propagating through the through hole 118 to space S2. That is, the separation distance δ of space S1 S1 Even when the distance is less than 50 mm, it is conceivable to generate plasma in space S1 by controlling the supply time of the source RF signal for plasma ignition.

[0113] Figure 27 shows an example of a simulation result of plasma generation according to the electromagnetic wave supply time when the separation distance of space S1 is short and the separation distance of space S2 is long. Table 172 shown in Figure 27 shows the separation distance δ of space S1. S1 The simulation results for plasma ignition when the distance is less than 50 mm are shown, along with the elapsed time and the relative permeability μ of the first layer 100c1 and the second layer 100c2 of the resonator array structure 100c. r1 ,μ r2 They are classified accordingly. Note that the relative permeability μ r1 ,μ r2 The combination is relative permeability μ r1 =-0.2 and relative permeability μ r2 =-0.6, relative permeability μ r1 =-0.6 and relative permeability μ r2 =-0.2, relative permeability μ r1 =1 and relative permeability μ r2 =-0.6, relative permeability μr1 =1 and relative permeability μ r2 These are all combinations where = 1.

[0114] As shown in Table 172, when the elapsed time from plasma ignition is 1 μs to 0.1 ms, the relative permeability μ r1 ,μ r2 In all of these combinations, no plasma is generated in space S1 and S2. Next, when the elapsed time from plasma ignition is 0.1 ms to 10 ms, the relative permeability μ r1 ,μ r2 In each of the combinations, plasma is generated in space S1, but a stable, high-density plasma is not generated in space S2. Next, when the elapsed time from plasma ignition is 10 ms to 100 ms, the relative permeability μ r1 ,μ r2 Among each combination, relative permeability μ r2 In the case of a negative combination, the plasma propagates from space S1 to space S2, and plasma is generated in space S2. Also, relative permeability μ r2 In the case of a negative combination, a stable, high-density plasma is not generated in space S1 after the plasma propagates into space S2. On the other hand, relative permeability μ r1 ,μ r2 In the case where both are positive combinations, plasma propagates from space S1 to space S2, while plasma is also generated in space S1. Plasma is generated in both spaces S1 and S2, but the state is unstable.

[0115] Table 172 shows that by setting the plasma generation time to 10 ms or less, plasma can be generated in space S1, and by setting the plasma generation time to more than 10 ms, plasma can be generated in space S2.

[0116] Figure 28 is an example of a timing chart of a source RF signal according to the first embodiment. Figures 29 and 30 are diagrams showing an example of the plasma generation position according to the first embodiment. As shown in Figure 28, the control device 11 controls the RF power supply 16 so that the supply time of the source RF signal (e.g., electromagnetic waves with power supply frequencies F0, F1) is pulsed. The control device 11 controls the RF power supply 16 so that, for example, it repeats pulses with a cycle time T. The pulse is, for example, a repetition of an ON time of 10 ms or less and an OFF time of 10 μs or more. The pulse may be a single pulse without repetition. The control device 11 may also control the RF power supply 16 so that the duty cycle of the pulse of the source RF signal (electromagnetic wave) is, for example, 90% or more. The ON time of the pulse corresponds to the plasma generation time, and if it is 10 ms or less, plasma P is generated in space S1 as shown in state 180 of Figure 29. The OFF time of the pulse is the time required for the plasma P generated in space S1 to disappear. In other words, the repetition of this pulse results in continuous (or intermittent) plasma generation in space S1.

[0117] On the other hand, if the pulse ON time exceeds 10 ms, plasma P is generated in space S2, as shown in state 181 in Figure 30. Furthermore, when plasma P is generated in space S2, an OFF time for the pulse is not required. In other words, the RF power supply 16 may be controlled to continuously supply the source RF signal.

[0118] Thus, the separation distance δ of space S1 S1 The distance between space S2 and space S2 is less than 50 mm, and the separation distance δ S2 When the distance is 50 mm or more, the control device 11 can control the plasma generation space to become space S1 or space S2 by controlling the supply time of the source RF signal in a pulsed manner. In other words, the control device 11 is configured to control the generation of plasma in the first space and the second space. That is, in the first embodiment, the plasma generation space can be switched by time-division control of the supply time of the source RF signal.

[0119] In other words, the control device 11 controls the supply time of electromagnetic waves from the RF power supply 16 in a pulsed manner so that the space where plasma is generated becomes either the first space or the second space. The control device 11 generates plasma in the first space by controlling the control device 11 so that the supply time is 10 ms or less. The control device 11 generates plasma in the second space by controlling the RF power supply 16 so that the supply time exceeds 10 ms. The control device 11 also controls the RF power supply 16 so that the interval between electromagnetic wave pulses is 10 μs or more. The control device 11 also controls the RF power supply 16 so that the duty cycle of the electromagnetic wave pulses is 90% or more. Furthermore, the distance between the lower surface (first surface) 20a of the dielectric window 20 and the resonator array structure 100 in the first space is less than 50 mm.

[0120] [Plasma control method] Next, an example of a plasma control method using the plasma processing apparatus 1 according to the first embodiment will be described. Figure 31 is a flowchart showing an example of the processing flow of the plasma control processing according to the first embodiment. The plasma control processing shown in Figure 31 is realized by the control device 11 controlling each part of the apparatus body 10. In Figure 31, the case in which etching processing or film deposition processing is performed as the plasma processing on the substrate WP will be described. In the following description, the resonator array structure 100 will be described as an example among the resonator array structures 100, 100a, 100b, and 100c, but it is not limited to this, and resonator array structures 100a, 100b, and 100c may also be used. In addition, in the following description, processing by radicals may be referred to as radical processing, and processing by ions and radicals may be referred to as plasma processing.

[0121] The control device 11 of the plasma processing apparatus 1 performs a pre-coating process (step S11) to pre-coat the inside of space S2 (second space) of the processing container 12. In the pre-coating process, a pre-coat substrate is brought into the processing container 12 and placed on the electrostatic chuck 14c. The control device 11 then opens the valve of the gas source 38a and controls the flow controller 38b so that a predetermined flow rate of pre-coat gas is supplied into the processing container 12. The control device 11 then controls the exhaust device 56 to adjust the pressure inside the processing container 12. The pre-coat gas may also be supplied to space S2 from the side gas injection section (SGI). In this case, a plasma generation gas such as a noble gas may be supplied to space S1. Furthermore, a pre-coat substrate may not be used.

[0122] Next, the control device 11 controls the RF power supply 16 to supply electromagnetic waves from the antenna 30 to spaces S1 and S2 within the processing container 12. Furthermore, when supplying electromagnetic waves to spaces S1 and S2, the control device 11 controls the RF power supply 16 so that the coupling coefficient k1 becomes loosely coupled directly below the top plate. As a result, plasma of the precoat gas is generated in space S2 (the second space) of the processing container 12.

[0123] The control device 11 controls the RF power supply 16 to control the frequency of the electromagnetic waves supplied from the antenna 30 to spaces S1 and S2 within the processing container 12 to a frequency belonging to the target frequency band. This generates resonance between the electromagnetic waves and the multiple resonators 101, making both the dielectric constant and permeability of the plasma in spaces S1 and S2 negative. As can be seen from equation (1) above, this enables the propagation of electromagnetic waves in spaces S1 and S2. As a result, in spaces S1 and S2 within the processing container 12, the propagation of electromagnetic waves becomes possible beyond the plasma skin depth, the power of the electromagnetic waves is efficiently injected into the plasma, and as a result, a high-density plasma is generated over a wide area beyond the plasma skin depth. Note that the power supply frequency may be set to a frequency belonging to the target frequency band where the refractive index is negative.

[0124] Furthermore, the control device 11 controls the RF power supply 16 so that the ON time of the source RF signal pulse exceeds 10 ms. Then, within the processing container 12, the processing gas is supplied from space S1 to space S2, and the plasma ignited in space S1 propagates to space S2 through the through hole 118. In space S2, plasma is stably generated by the resonance of the resonator array structure 100. Space S2 becomes a high-density plasma region, and this plasma performs a pre-coating process on the inner wall of the processing container 12 in space S2. In the pre-coating process, for example, a silicon-containing film such as a silicon oxide film, a carbon-containing film, etc., is pre-coated to the inner wall of the processing container 12. The pre-coating gas can be, for example, a combination of a silicon-containing gas such as SiCl4 or aminosilane-based gas and an oxygen-containing gas such as O2 gas, or a carbon-containing gas such as methane gas (CH4) or acetylene gas (C2H2). When the pre-coating process is completed, the pre-coated substrate is removed from the processing container 12 by a robotic arm (not shown).

[0125] The pre-coating process is an example of a process that generates plasma in a second space before the substrate WP is brought into the processing container 12, and is an example of a pre-coating process applied to the second space.

[0126] Next, the substrate WP is brought into the processing container 12 and placed on the electrostatic chuck 14c (step S12). The control device 11 then opens the valve of the gas source 38a and controls the flow controller 38b so that a predetermined flow rate of processing gas is supplied into the processing container 12. The control device 11 then controls the exhaust device 56 to adjust the pressure inside the processing container 12.

[0127] The control device 11 executes an etching process or a film deposition process (step S13). The processing gas in the etching process or film deposition process may be supplied to space S1, to space S2, or to spaces S1 and S2. The control device 11 controls the RF power supply 16 to supply electromagnetic waves from the antenna 30 to spaces S1 and S2 inside the processing container 12. When supplying electromagnetic waves to spaces S1 and S2, the control device 11 controls the RF power supply 16 so that the coupling coefficient k1 becomes tightly coupled directly below the top plate. As a result, plasma of the processing gas is generated in space S1 (the first space) inside the processing container 12. The control device 11 also controls the RF power supply 16 to control the frequency of the electromagnetic waves supplied from the antenna 30 to space S1 inside the processing container 12 to a frequency belonging to the target frequency band. As a result, propagation of electromagnetic waves in space S1 becomes possible. As a result, in the space S1 within the processing vessel 12, electromagnetic waves can propagate beyond the plasma skin depth, and the power of the electromagnetic waves is efficiently injected into the plasma. Consequently, a high-density plasma is generated over a wide area beyond the plasma skin depth. The power supply frequency may be set to a frequency belonging to the target frequency band where the refractive index is negative.

[0128] Furthermore, the control device 11 controls the RF power supply 16 so that the ON time of the source RF signal pulse is 10 ms or less. As a result, the plasma ignited in space S1 extinguishes before it propagates to space S2. Since the inside of the processing vessel 12 is depressurized by the exhaust device 56, a flow is generated toward the exhaust port 12h. Therefore, the processing gas supplied to space S1 excites the plasma in space S1 and flows through the through hole 118 to space S2. The through hole 118 functions as an ion trap. In other words, high-density radicals are supplied to space S2 from the through hole 118. Space S2 becomes a high-density radical region, and the plasma processing process on the substrate WP is executed by these radicals.

[0129] In the case of the etching step, the plasma processing process may include, for example, hydrogen fluoride gas and at least one carbon-containing gas selected from the group consisting of C4F8 gas, C3H2F4 gas, and C4H2F6 gas as the processing gas. Furthermore, noble gases such as argon, xenon, and neon, nitrogen-containing gases such as N2 gas, and oxygen-containing gases such as O2 gas can be used as carrier gases. The carrier gas may also be a mixture of these gases. In the etching step, for example, etching of a silicon-containing film formed on a substrate WP is performed. That is, in space S2, the processing gas is dissociated by high-density radicals, and the substrate WP is etched.

[0130] Furthermore, in the case of a film deposition process, the plasma treatment process may use carbon-containing gases such as acetylene gas (C2H2) and ethylene gas (C2H4) as the treatment gas. In addition, noble gases such as argon, xenon, and neon, nitrogen-containing gases such as N2 gas, oxygen-containing gases such as O2 gas, and hydrogen-containing gases such as H2 gas can be used as carrier gases. The carrier gas may also be a mixture of these gases. In the film deposition process, for example, one or more carbon films from graphene film, amorphous carbon film, and diamond-like carbon film are deposited on the substrate WP. In other words, in space S2, the treatment gas is dissociated by high-density radicals and film deposition is carried out on the substrate WP.

[0131] The etching process or film deposition process is an example of a process for generating plasma in the first space while the substrate WP is supported by the substrate support part (stage 14), and is an example of an etching treatment or film deposition treatment on the substrate WP.

[0132] Once the plasma treatment process is complete, the substrate WP is removed from the treatment container 12 by a robotic arm (not shown) (step S14).

[0133] The control device 11 performs a cleaning process to clean the inside of the processing container 12 when no substrate WP is present in the processing container 12 (step S15). In the cleaning process, a cleaning substrate is brought into the processing container 12 and placed on the electrostatic chuck 14c. The control device 11 then opens the valve of the gas source 38a and controls the flow controller 38b so that a predetermined flow rate of cleaning gas is supplied into the processing container 12. The control device 11 then controls the exhaust device 56 to adjust the pressure inside the processing container 12. The cleaning gas may also be supplied to space S2 from the side gas injection port (SGI). In this case, a plasma generation gas such as a noble gas may be supplied to space S1. In other words, the cleaning gas in the cleaning process may be supplied to space S1, to space S2, or to spaces S1 and S2. Furthermore, a cleaning substrate may not be used.

[0134] Next, the control device 11 controls the RF power supply 16 to supply electromagnetic waves from the antenna 30 to spaces S1 and S2 within the processing container 12. The control device 11 also controls the RF power supply 16 so that the coupling coefficient k1 becomes loosely coupled directly below the top plate when supplying electromagnetic waves to spaces S1 and S2. As a result, a plasma of the cleaning gas is generated in space S2 (the second space) of the processing container 12. The control device 11 also controls the RF power supply 16 to control the frequency of the electromagnetic waves supplied from the antenna 30 to spaces S1 and S2 within the processing container 12 to a frequency that belongs to the target frequency band.

[0135] Furthermore, the control device 11 controls the RF power supply 16 so that the ON time of the source RF signal pulse exceeds 10 ms. Then, within the processing container 12, the processing gas is supplied from space S1 to space S2, and the plasma ignited in space S1 propagates to space S2 through the through hole 118. In space S2, plasma is stably generated by the resonance of the resonator array structure 100. Space S2 becomes a high-density plasma region, and this plasma performs a cleaning process (cleaning step) on the inner wall of space S2 of the processing container 12. In the cleaning process, for example, by introducing a halogen gas such as ClF3 or an oxygen-containing gas such as O2 gas, deposits in space S2 of the processing container 12 are removed by the etching effect of the gas. When the cleaning step is completed, the cleaning substrate is removed from the processing container 12 by a robotic arm (not shown).

[0136] The cleaning process is an example of a process in which plasma is generated in a second space after the substrate WP is removed from the processing container 12, and is an example of a cleaning process performed within the second space.

[0137] In steps S11, S13, and S15 shown in Figure 31, the control device 11 may control the RF power supply 16 to supply electromagnetic waves (broadband electromagnetic waves) containing multiple frequency components belonging to a predetermined frequency bandwidth from the antenna 30 to spaces S1 and S2 inside the processing container 12. In this case, the control device 11 may perform the following processing in steps S11, S13, and S15. That is, the control device 11 may control the RF power supply 16 to control the frequencies of the multiple frequency components contained in the broadband electromagnetic waves supplied from the antenna 30 to spaces S1 and S2 inside the processing container 12 up to the target frequency band.

[0138] Thus, the plasma control process shown in Figure 31 can shorten the pre-coating time in space S2, i.e., the processing chamber. Furthermore, radical treatment can be performed in the etching or film deposition process.

[0139] Next, we will explain the case where etching and ashing are performed as plasma-based processes, using Figure 32. Figure 32 is a flowchart showing an example of the processing flow of the plasma-controlled process according to the first embodiment. The plasma-controlled process shown in Figure 32 is realized by the control device 11 controlling each part of the apparatus body 10.

[0140] The control device 11 of the plasma processing apparatus 1 performs a pre-coating process to pre-coat the inside of space S2 (second space) of the processing container 12 (step S21). Note that step S21 is the same as step S11 described above, so the explanation is omitted. The pre-coating process in step S21 may also be omitted. Next, the control device 11 receives the substrate WP into the processing container 12 and places it on the electrostatic chuck 14c (step S22). The control device 11 then opens the valve of the gas source 38a and controls the flow controller 38b so that a predetermined flow rate of processing gas is supplied into the processing container 12. The control device 11 then controls the exhaust device 56 to adjust the pressure inside the processing container 12.

[0141] The control device 11 executes the etching process (step S23). The processing gas in the etching process may be supplied to space S1, to space S2, or to spaces S1 and S2. The control device 11 controls the RF power supply 16 to supply electromagnetic waves from the antenna 30 to spaces S1 and S2 inside the processing container 12. When supplying electromagnetic waves to spaces S1 and S2, the control device 11 controls the RF power supply 16 so that the coupling coefficient k1 becomes tightly coupled directly below the top plate. As a result, plasma of the processing gas is generated in space S1 (the first space) inside the processing container 12. The control device 11 also controls the RF power supply 16 to control the frequency of the electromagnetic waves supplied from the antenna 30 to spaces S1 and S2 inside the processing container 12 to a frequency belonging to the target frequency band. As a result, propagation of electromagnetic waves in space S1 becomes possible. As a result, in the space S1 within the processing vessel 12, electromagnetic waves can propagate beyond the plasma skin depth, and the power of the electromagnetic waves is efficiently injected into the plasma. Consequently, a high-density plasma is generated over a wide area beyond the plasma skin depth. The power supply frequency may be set to a frequency belonging to the target frequency band where the refractive index is negative.

[0142] Furthermore, the control device 11 controls the RF power supply 16 so that the ON time of the source RF signal pulse is 10 ms or less. As a result, the plasma ignited in space S1 extinguishes before it propagates to space S2. Since the inside of the processing vessel 12 is depressurized by the exhaust device 56, a flow is generated toward the exhaust port 12h. Therefore, the processing gas supplied to space S1 excites the plasma in space S1 and flows through the through hole 118 to space S2. The through hole 118 functions as an ion trap. In other words, high-density radicals are supplied to space S2 from the through hole 118. Space S2 becomes a high-density radical region, and these radicals perform a plasma processing process (etching process) on the substrate WP.

[0143] In this plasma processing process (etching step), if the film to be etched is a silicon oxide film (SiO2), the processing gas may be, for example, carbon fluoride gas. If the film to be etched is a silicon film (Si), the processing gas may be, for example, a halide such as Cl2. Furthermore, the processing gas may also contain oxygen-containing gases such as O2 gas, CH4 gas, a mixed gas of HBr and carbon fluoride-containing gas, hydrofluorocarbon gas, etc. By including these gases in the processing gas, effects such as sidewall passivation can be obtained. In addition, noble gases such as argon, xenon, and neon, nitrogen-containing gases such as N2 gas, and oxygen-containing gases such as O2 gas can be used as carrier gases. The carrier gas may also be a mixture of these gases. In the etching step, for example, etching of a silicon-containing film formed on a substrate WP is performed. That is, in space S2, the processing gas is dissociated by high-density radicals, and the substrate WP is etched.

[0144] Next, the control device 11 performs the ashing process (step S24). The control device 11 opens the valve of the gas source 38a and controls the flow controller 38b so that a predetermined flow rate of ashing gas is supplied into the processing container 12. Then, the control device 11 controls the exhaust device 56 to adjust the pressure inside the processing container 12. In addition, the ashing gas in the ashing process may be supplied to space S2 from the side gas injection section (SGI). In this case, a plasma generation gas such as a noble gas may be supplied to space S1. In other words, the ashing gas in the ashing process may be supplied to space S1, to space S2, or to spaces S1 and S2.

[0145] The control device 11 controls the RF power supply 16 to supply electromagnetic waves from the antenna 30 to spaces S1 and S2 within the processing container 12. Furthermore, when supplying electromagnetic waves to spaces S1 and S2, the control device 11 controls the RF power supply 16 so that the coupling coefficient k1 becomes loosely coupled directly below the top plate. This generates a plasma of the ashing gas within space S2 (the second space) of the processing container 12. The control device 11 also controls the RF power supply 16 to control the frequency of the electromagnetic waves supplied from the antenna 30 to spaces S1 and S2 within the processing container 12 to a frequency belonging to the target frequency band. This enables the propagation of electromagnetic waves in spaces S1 and S2.

[0146] Furthermore, the control device 11 controls the RF power supply 16 so that the ON time of the source RF signal pulse exceeds 10 ms. Then, within the processing vessel 12, the processing gas is supplied from space S1 to space S2, and the plasma ignited in space S1 propagates to space S2 through the through hole 118. In space S2, plasma is stably generated by the resonance of the resonator array structure 100. Space S2 becomes a high-density plasma region, and the plasma (ions and radicals) performs a plasma processing process (ashing process) on the substrate WP.

[0147] In the plasma processing process (ashing process), the ashing gas can be, for example, an oxygen-containing gas such as O2 gas. As a carrier gas, noble gases such as argon, xenon, and neon, nitrogen-containing gases such as N2 gas, and oxygen-containing gases such as O2 gas can be used. The carrier gas may also be a mixture of these gases. In the ashing process, for example, the resist formed on the substrate WP is removed. That is, in space S2, for example, an oxygen plasma is generated to rapidly remove the resist from the substrate WP.

[0148] The ashing process is an example of a process in which plasma is generated in a second space while the substrate WP is supported by the substrate support part (stage 14), and is an example of an ashing treatment for the substrate WP.

[0149] Once the ashing process is complete, the substrate WP is removed from the processing container 12 by a robotic arm (not shown) (step S25).

[0150] In steps S21, S23, and S24 shown in Figure 32, the control device 11 may control the RF power supply 16 to supply electromagnetic waves (broadband electromagnetic waves) containing multiple frequency components belonging to a predetermined frequency bandwidth from the antenna 30 to spaces S1 and S2 inside the processing container 12. In this case, the control device 11 may perform the following processing in steps S21, S23, and S24. That is, the control device 11 may control the RF power supply 16 to control the frequencies of the multiple frequency components contained in the broadband electromagnetic waves supplied from the antenna 30 to spaces S1 and S2 inside the processing container 12 up to the target frequency band.

[0151] Thus, in the plasma control process shown in Figure 32, radical treatment and plasma treatment can be performed in a single apparatus during the etching and ashing processes.

[0152] (Second Embodiment) In the first embodiment described above, the plasma generation space was controlled by controlling the ON time of the pulse of the source RF signal (electromagnetic wave) for plasma generation, but the separation distance δ of space S1 S1 The control may be modified, and this embodiment will be described as the second embodiment. In the plasma processing apparatus in the second embodiment, the separation distance δ S1 Except for the changes to the first embodiment described above, the second embodiment is the same as the first embodiment, so the description of the redundant configuration and operation will be omitted. In addition, in the second embodiment, the separation distance δ S1 Since the explanation will primarily focus on describing the positional relationships of each part, a simpler diagram than Figure 1 will be used.

[0153] Figure 33 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the second embodiment. As shown in Figure 33, the plasma processing apparatus 2 of the second embodiment has a main apparatus body 210 and a control device 11. The main apparatus body 210 has a processing vessel 212 and a dielectric window 220 instead of the processing vessel 12 and dielectric window 20 of the first embodiment.

[0154] The processing container 212 has a dielectric window 220 provided at the upper end of the side wall 212a via a bellows 215, which closes the opening at the upper end of the side wall 212a from above. The lower surface 220a of the dielectric window 220 faces the space S1. That is, the dielectric window 220 is provided with its lower surface 220a facing the space S1. Note that the lower surface 220a is an example of the first surface of the dielectric window 220.

[0155] The bellows 215 is provided between the upper end of the side wall 212a and the dielectric window 220. The bellows 215 separates the space S1 from the outside of the processing container 212. The lower end of the bellows 215 is fixed to the upper end of the side wall 212a. The upper end of the bellows 215 is fixed to the dielectric window 220.

[0156] The apparatus body 210 has a plurality of drive units 217 for raising and lowering the dielectric window 220. The plurality of drive units 217 are configured to move the dielectric window 220 upward and downward. Each drive unit 217 includes a drive device 217d and a shaft 217s. The dielectric window 220 is fixed to the shaft 217s. The drive device 217d is provided on the outside of the processing container 212. The drive device 217d is configured to move the shaft 217s upward and downward. The drive device 217d includes, for example, an air cylinder or a motor. The upward and downward movement of the shaft 217s causes the dielectric window 220 to move upward and downward. That is, the drive unit 217 controls the separation distance δ, which is the distance between the lower surface 220a, which is the first surface of the dielectric window 220, and the resonator array structure 100. S1 It is configured to be changeable. Note that there may be only one drive unit 217, for example, if it is connected to the center of the dielectric window 220.

[0157] The control device 11 of the plasma processing apparatus 2 has a separation distance δ S1 The drive unit 217 is controlled to change the following: In the main body of the device 210, for example, the separation distance δ S1 The distance can be changed within a range of 30 mm to 70 mm. The control device 11 controls the drive unit 217 to control the separation distance δ S1 By setting the distance to 50 mm or more, the plasma generation space is controlled to become space S1. The control device 11 controls the drive unit 217 to control the separation distance δ S1 By setting the distance to less than 50 mm, the plasma generation space is controlled to become space S2. In the second embodiment, the separation distance δ S2 This is defined as being 50mm or longer.

[0158] Figure 34 shows an example of switching the plasma generation space according to the position of the dielectric window according to the second embodiment. State 280 shown in Figure 34 is a separation distance δ S1 For example, the separation distance δ should be 50 mm or more. S1 The distance is controlled to 70 mm. In state 280, the separation distance δ S1 Since the distance is 50 mm or more, plasma P1 is generated in space S1. In other words, in state 280, radial treatment can be performed on the substrate WP.

[0159] Next, the control device 11 controls the separation distance δ S1 The drive unit 217 is controlled so that the distance δ is less than 50 mm, and the system switches to state 281. State 281 is when the separation distance δ S1 For example, the separation distance δ should be less than 50 mm. S1 The distance is controlled to 30 mm. In state 281, the separation distance δ S1 Since the distance is less than 50 mm, plasma P2 is generated in space S2. That is, in state 281, plasma treatment can be performed on the substrate WP.

[0160] (Variation 1) Next, a modification 1 of the second embodiment will be described using Figure 35. Figure 35 is a schematic cross-sectional view showing an example of the configuration of the apparatus body according to modification 1. In the apparatus body 310 shown in Figure 35, instead of the dielectric window 220 which was driven up and down in the second embodiment, a resonator array structure 100 is driven up and down inside the processing container 312.

[0161] The main body of the apparatus 310 has a processing container 312 instead of the processing container 12 of the first embodiment, and further has a drive unit 390.

[0162] The processing container 312 has multiple openings 312k in its bottom 312b. The drive unit 390 is configured to move the resonator array structure 100 upward and downward. Multiple shafts 391 are connected to the lower surface of the resonator array structure 100. Each of the multiple shafts 391 is connected to the drive unit 390 through the openings 312k. Multiple bellows 315 are provided around the multiple shafts 391. Each of the multiple bellows 315 is provided between the bottom 312b and the lower surface of the resonator array structure 100. The multiple bellows 315 separate the space S2 from the outside of the processing container 312. The lower ends of each of the multiple bellows 315 are fixed to the bottom 312b. The upper ends of each of the multiple bellows 315 are fixed to the lower surface of the resonator array structure 100.

[0163] The drive unit 390 is located on the outside of the processing container 312. The drive unit 390 is configured to move a plurality of shafts 391 upward and downward. The drive unit 390 includes, for example, an air cylinder and a motor. The upward and downward movement of the plurality of shafts 391 causes the resonator array structure 100 to move upward and downward. That is, the drive unit 390 controls the separation distance δ, which is the distance between the lower surface 20a, which is the first surface of the dielectric window 20, and the resonator array structure 100. S1 It is configured to be changeable. The drive unit 390 may include multiple shafts 391.

[0164] In modified example 1, the control device 11 has a separation distance δ S1The drive unit 390 is controlled to change the following: In the main body of the device 310, for example, the separation distance δ S1 The distance can be changed within a range of 30 mm to 70 mm. The control device 11 controls the drive unit 390 to control the separation distance δ S1 By setting the distance to 50 mm or more, the plasma generation space is controlled to become space S1. The control device 11 controls the drive unit 390 to control the separation distance δ S1 By setting the distance to less than 50 mm, the plasma generation space is controlled to become space S2. In modified example 1, the separation distance δ S2 It is assumed that this is 50 mm or more. Thus, in modified example 1 as well, the separation distance δ S1 By changing this setting, the plasma generation space can be controlled to be either space S1 or space S2.

[0165] (Modification 2) Next, a modification 2 of the second embodiment will be described using Figure 36. Figure 36 is a schematic cross-sectional view showing an example of the configuration of the apparatus body according to modification 2. In the apparatus body 410 shown in Figure 36, instead of the resonator array structure 100 which was driven up and down in modification 1, the processing container 512 is driven up and down inside the processing container 412.

[0166] The main body of the apparatus 410 has processing containers 412 and 512 instead of the processing container 12 of the first embodiment, and further has a drive unit 490. Processing container 512 is provided inside processing container 412.

[0167] The processing container 412 has an opening 412k at its bottom 412b. The drive unit 490 is configured to move the processing container 512 upward and downward. The bottom surface of the processing container 512 is composed of a stage 414. A shaft 491 is connected to the lower surface of the stage 414. The shaft 491 is connected to the drive unit 490 through the opening 412k. A bellows 415 is provided around the shaft 491. The bellows 415 is provided between the bottom 412b and the upper surface of the drive unit 490. The bellows 415 separates the space S1 from the outside of the processing container 412. The lower end of the bellows 415 is fixed to the upper surface of the drive unit 490. The upper end of the bellows 415 is fixed to the lower surface of the bottom 412b.

[0168] The processing container 512 is placed inside the processing container 412 and is configured to define a space S2 together with the stage 414, the side wall 512a, and the resonator array structure 100. In other words, the resonator array structure 100 constitutes the top plate of the processing container 512. The processing container 512 is made of a metal such as aluminum. A corrosion-resistant film may be formed on the surface of the processing container 512. The corrosion-resistant film may be formed from a material such as aluminum oxide or yttrium oxide.

[0169] The drive unit 490 is located on the outside of the processing container 412. The drive unit 490 is configured to move the shaft 491 upward and downward. The drive unit 490 includes, for example, an air cylinder or a motor. The upward and downward movement of the shaft 491 causes the processing container 512 to move upward and downward. That is, the drive unit 490 controls the separation distance δ, which is the distance between the lower surface 20a, which is the first surface of the dielectric window 20, and the resonator array structure 100. S1 It is configured to be changeable. The drive unit 490 may also include a shaft 491.

[0170] In modified example 2, the control device 11 has a separation distance δ S1 The drive unit 490 is controlled to change the following: In the main body of the device 410, for example, the separation distance δ S1The distance can be changed within a range of 30 mm to 70 mm. The control device 11 controls the drive unit 490 to control the separation distance δ S1 By setting the distance to 50 mm or more, the plasma generation space is controlled to become space S1. The control device 11 controls the drive unit 490 to control the separation distance δ S1 By setting the distance to less than 50 mm, the plasma generation space is controlled to become space S2. In modified example 2, the separation distance δ S2 It is assumed that this is 50 mm or more. Thus, in modified example 2 as well, the separation distance δ S1 By changing this setting, the plasma generation space can be controlled to be either space S1 or space S2.

[0171] In other words, in the second embodiment, by changing the position of the dielectric (dielectric window 220), the distance between the first surface (bottom surface 220a) of the dielectric and the resonator array structure 100 (separation distance δ) can be changed. S1 The device further includes a drive unit 217 configured to change the distance. The control device 11 controls the drive unit 217 to change the distance so that the space where the plasma is generated becomes the first space or the second space. In the modified example 1, the position of the resonator array structure 100 is changed so that the distance between the first surface (bottom surface 20a) of the dielectric (dielectric window 20) and the resonator array structure 100 (separation distance δ) is changed. S1 The device further includes a drive unit 390 configured to change the distance. The control device 11 controls the drive unit 390 to change the distance so that the space where the plasma is generated becomes the first space or the second space. In the modified example 2, the substrate support unit (stage 414) and the resonator array structure 100 are integrated as a single unit (processing container 512) and their positions are changed so that the distance (separation distance δ) between the first surface (bottom surface 20a) of the dielectric (dielectric window 20) and the resonator array structure 100 is changed. S1The device further includes a drive unit 490 configured to change the distance. The control device 11 controls the drive unit 490 to change the distance so that the space where the plasma is generated becomes the first space or the second space. In the second embodiment and modifications 1 and 2, the control device 11 generates plasma in the first space by controlling the drive units 217, 390, and 490 so that the distance is 50 mm or more. The control device 11 generates plasma in the second space by controlling the drive units 217, 390, and 490 so that the distance is less than 50 mm.

[0172] Furthermore, the various plasma control processes shown in Figures 31 and 32 of the first embodiment are also applicable to the second embodiment and modified examples 1 and 2. In this case, the control device 11 controls the drive units 217, 390, and 490 to control the separation distance δ S1 The settings are changed to switch the plasma generation space to either space S1 or space S2.

[0173] According to each of the embodiments described above, the plasma processing apparatus (plasma processing apparatuses 1 and 2) includes a processing container (processing containers 12, 212, 312, 412, 512), a substrate support unit (stages 14, 414), an electromagnetic wave generator (RF power source 16), a dielectric (dielectric windows 20, 220), an electromagnetic wave supply unit (antenna 30), a resonator array structure (resonator array structures 100, 100a, 100b, 100c), and a control unit (control device 11). The processing container is configured to include a first space (space S1) and a second space (space S2) for generating plasma. The substrate support unit is configured to support a substrate WP within the processing container. The electromagnetic wave generator is configured to generate electromagnetic waves for plasma excitation supplied into the processing container. The dielectric is provided with its first surface (lower surface 20a) facing the inside of the processing container. The electromagnetic wave supply unit is configured to supply electromagnetic waves into the processing container through the dielectric. The resonator array structure is provided between the first space and the second space, is capable of resonating with the magnetic field component of the electromagnetic wave, has a size smaller than the wavelength of the electromagnetic wave, and is configured to include a plurality of resonators (resonators 101, 101a, 101b, 121, 121a, 121b, 121A) arranged in the same plane direction. The control unit is configured to control the generation of plasma in the first space and the second space. The first space is the space between the first surface of the dielectric and the resonator array structure, and the second space is the space between the resonator array structure and the substrate support unit. As a result, radical processing and plasma processing can be switched in one apparatus.

[0174] Further, according to each of the embodiments, a shower head (resonator array structures 100, 100a, 100b, 100c) is further provided, which partitions the first space and the second space and includes a resonator array structure and through holes (through holes 118, 133, 133a) that communicate the first space and the second space. As a result, when the plasma generation space is the first space (space S1), high-density radicals can be generated. Also, the propagation of plasma ignition can be transmitted from the first space (space S1) to the second space (space S2). Further, various gases supplied to the first space (space S1) can be supplied to the second space (space S2).

[0175] Further, according to the first embodiment, the control unit controls the supply time of the electromagnetic wave in the electromagnetic wave generator in a pulsed manner, so as to control the space for generating plasma to be the first space or the second space. As a result, radical processing and plasma processing can be switched in one device.

[0176] Further, according to the first embodiment, the control unit controls the electromagnetic wave generator so that the supply time is 10 ms or less, thereby generating plasma in the first space. As a result, radical processing can be performed in the second space (space S2).

[0177] Further, according to the first embodiment, the control unit controls the electromagnetic wave generator so that the supply time exceeds 10 ms, thereby generating plasma in the second space. As a result, plasma processing by ions and radicals can be performed in the second space (space S2).

[0178] Further, according to the first embodiment, the control unit controls the electromagnetic wave generator so that the interval between the pulses of the electromagnetic wave is 10 μs or more. As a result, plasma generation can be maintained in the first space (space S1).

[0179] Further, according to the first embodiment, the control unit controls the electromagnetic wave generator so that the duty ratio of the pulses of the electromagnetic wave is 90% or more. As a result, plasma generation can be maintained in the first space (space S1).

[0180] Further, according to the first embodiment, the distance (separation distance δ S1 ) between the first surface of the dielectric and the resonator array structure in the first space is less than 50 mm. As a result, by controlling the supply time of the electromagnetic wave in a pulsed manner, the plasma generation space can be switched between space S1 and space S2.

[0181] Furthermore, according to the second embodiment, by changing the position of the dielectric (dielectric window 220), the distance between the first surface (lower surface 220a) of the dielectric and the resonator array structure (separation distance δ) can be changed. S1 The device further includes a drive unit 217 configured to change the distance. The control unit controls the drive unit 217 to change the distance so that the space where the plasma is generated becomes either the first space or the second space. As a result, it is possible to switch between radical processing using high-density plasma and plasma processing in a single device.

[0182] Furthermore, according to Modification 1, by changing the position of the resonator array structure, the distance (separation distance δ) between the first surface (bottom surface 20a) of the dielectric (dielectric window 20) and the resonator array structure can be changed. S1 The system further includes a drive unit 390 configured to change the distance. The control unit controls the drive unit 390 to change the distance, thereby controlling the space where the plasma is generated to be either the first space or the second space. As a result, it is possible to switch between radical processing using high-density plasma and plasma processing in a single device.

[0183] Furthermore, according to Modification 2, by changing the position of the substrate support (stage 414) and the resonator array structure as a single unit (processing container 512), the distance (separation distance δ) between the first surface (bottom surface 20a) of the dielectric (dielectric window 20) and the resonator array structure can be changed. S1 The system further includes a drive unit 490 configured to change the distance. The control unit controls the drive unit 490 to change the distance so that the space where the plasma is generated becomes either the first space or the second space. As a result, it is possible to switch between radical processing using high-density plasma and plasma processing in a single device.

[0184] Furthermore, according to the second embodiment and modified examples 1 and 2, the control unit generates plasma in the first space by controlling the drive unit so that the distance is 50 mm or more. As a result, radical processing can be performed in the second space (space S2).

[0185] Furthermore, according to the second embodiment and modified examples 1 and 2, the control unit generates plasma in the second space by controlling the drive unit so that the distance is less than 50 mm. As a result, plasma processing using ions and radicals can be performed in the second space (space S2).

[0186] Furthermore, according to the first embodiment, the plasma control method is a plasma control method for the plasma processing apparatus 1, wherein the control unit controls the supply time of electromagnetic waves in the electromagnetic wave generator in a pulsed manner so that the space where plasma is generated becomes either the first space or the second space. As a result, radical processing and plasma processing can be switched in a single apparatus by controlling the supply time of electromagnetic waves.

[0187] Furthermore, according to the second embodiment, the plasma control method is a plasma control method for the plasma processing apparatus 2, wherein the control unit controls the drive unit to change the distance between the first surface of the dielectric and the resonator array structure, thereby controlling the space where the plasma is generated to become either the first space or the second space. As a result, in a single apparatus, radical processing using high-density plasma and plasma processing can be switched by controlling the distance between the first surface of the dielectric and the resonator array structure.

[0188] Furthermore, according to each embodiment, the plasma control method includes a) generating plasma in a second space before the substrate WP is brought into the processing container, b) generating plasma in a first space while the substrate WP is supported by the substrate support, and c) generating plasma in a second space after the substrate WP has been removed from the processing container. As a result, processing can be performed in the second space (space S2) and on the substrate WP.

[0189] Furthermore, according to each embodiment, a) is a pre-coating treatment for the second space, b) is an etching treatment or film deposition treatment for the substrate WP, and c) is a cleaning treatment for the second space. As a result, the pre-coating time for the second space (space S2) can be shortened. In addition, radical treatment can be performed in the etching treatment or film deposition treatment.

[0190] Furthermore, according to each embodiment, the plasma control method includes d) generating plasma in a first space while the substrate WP is supported by the substrate support, and e) generating plasma in a second space while the substrate WP is supported by the substrate support. As a result, it is possible to switch between radical processing and plasma processing in a single device.

[0191] Furthermore, according to each embodiment, d) is an etching process for the substrate WP, and e) is an ashing process for the substrate WP. As a result, radical treatment and plasma treatment can be performed in a single apparatus during the etching and ashing processes.

[0192] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0193] In each of the above-described embodiments, as the resonator array structures 100, 100a, 100b, 100c, an example in which the resonators 101, 101a, 101b, 121, 121a, 121b are arranged along a plane parallel to the lower surfaces 20a, 220a of the dielectric windows 20, 220 has been described. However, the present invention is not limited to this. For example, a resonator array structure in which the resonators 101, 121 are arranged along a plane perpendicular to the lower surfaces 20a, 220a may be used. In this case, each of the arranged resonators 101, 121 may form a cell, and plasma may be generated inside the cell. Also, a plurality of cells may be arranged in a lattice pattern. Further, the plurality of cells may have the largest opening located on the side of the lower surfaces 20a, 220a, or the largest opening may be located on the side of the stages 14, 414.

[0194] In each of the above embodiments, an inductively coupled coil is used as the antenna for injecting electromagnetic waves. However, the present invention is not limited to this as long as a magnetic field can be generated in a direction penetrating through the coils 111 such as the resonators 101, 121 and the ring members 131, etc. of the resonator array structure 100 or the like. Such an antenna for injecting electromagnetic waves is not limited to an inductively coupled coil, and for example, any antenna or mechanism for injecting electromagnetic waves such as a monopole antenna, a slot antenna, a capacitively coupled electrode, a magnetron, etc. can be used.

[0195] Note that the present disclosure can also adopt the following configurations. (1) A processing container configured to include a first space and a second space for generating plasma, A substrate support portion configured to support a substrate inside the processing container, An electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation supplied into the processing container, A dielectric provided with a first surface facing the inside of the processing container, An electromagnetic wave supply portion configured to supply the electromagnetic waves into the processing container through the dielectric, A resonator array structure provided between the first space and the second space, comprising a plurality of resonators that are capable of resonating with the magnetic field component of the electromagnetic wave, have a size smaller than the wavelength of the electromagnetic wave, and are arranged in the same plane; The system includes a control unit configured to control the generation of the plasma in the first space and the second space, The first space is the space between the first surface of the dielectric and the resonator array structure, The second space is the space between the resonator array structure and the substrate support portion. Plasma processing equipment. (2) The device further comprises a shower head that separates the first space and the second space and is configured to include the resonator array structure and a through hole that connects the first space and the second space. The plasma processing apparatus described in (1) above. (3) The control unit controls the supply time of the electromagnetic waves in the electromagnetic wave generator in a pulsed manner so that the space where the plasma is generated becomes the first space or the second space. The plasma processing apparatus described in (1) or (2) above. (4) The control unit generates the plasma in the first space by controlling the electromagnetic wave generator so that the supply time is 10 ms or less. The plasma processing apparatus described in (3) above. (5) The control unit generates the plasma in the second space by controlling the electromagnetic wave generator so that the supply time exceeds 10 ms. The plasma processing apparatus described in (3) above. (6) The control unit controls the electromagnetic wave generator so that the interval between electromagnetic wave pulses is 10 μs or more. A plasma processing apparatus according to any one of (3) to (5) above. (7) The control unit controls the electromagnetic wave generator so that the duty cycle of the electromagnetic wave pulses is 90% or more. A plasma processing apparatus according to any one of (3) to (6) above. (8) The distance between the first surface of the dielectric and the resonator array structure in the first space is less than 50 mm. A plasma processing apparatus according to any one of (3) to (7) above. (9) The device further includes a drive unit configured to change the distance between the first surface of the dielectric and the resonator array structure by changing the position of the dielectric, The control unit controls the drive unit to change the distance so that the space where the plasma is generated becomes the first space or the second space. The plasma processing apparatus described in (1) above. (10) The device further includes a drive unit configured to change the distance between the first surface of the dielectric and the resonator array structure by changing the position of the resonator array structure, The control unit controls the drive unit to change the distance so that the space where the plasma is generated becomes the first space or the second space. The plasma processing apparatus described in (1) above. (11) The drive unit is further configured to change the distance between the first surface of the dielectric and the resonator array structure by changing the position of the substrate support and the resonator array structure as a single unit, The control unit controls the drive unit to change the distance so that the space where the plasma is generated becomes the first space or the second space. The plasma processing apparatus described in (1) above. (12) The control unit generates the plasma in the first space by controlling the drive unit so that the distance is 50 mm or more. A plasma processing apparatus according to any one of (9) to (11) above. (13) The control unit generates the plasma in the second space by controlling the drive unit so that the distance is less than 50 mm. A plasma processing apparatus according to any one of (9) to (12) above. (14) A processing vessel configured to include a first space and a second space for generating plasma, A substrate support portion configured to support the substrate within the processing container, An electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation supplied into the processing container, A dielectric material is provided with its first surface facing the processing container, An electromagnetic wave supply unit configured to supply the electromagnetic waves into the processing container via the dielectric, A resonator array structure provided between the first space and the second space, comprising a plurality of resonators that are capable of resonating with the magnetic field component of the electromagnetic wave, have a size smaller than the wavelength of the electromagnetic wave, and are arranged in the same plane; The system includes a control unit configured to control the generation of the plasma in the first space and the second space, The first space is the space between the first surface of the dielectric and the resonator array structure, The plasma control method for a plasma processing apparatus, wherein the second space is the space between the resonator array structure and the substrate support portion, The control unit controls the supply time of the electromagnetic waves in the electromagnetic wave generator in a pulsed manner so that the space where the plasma is generated becomes the first space or the second space. Plasma control method. (15) A processing vessel configured to include a first space and a second space for generating plasma, A substrate support portion configured to support the substrate within the processing container, An electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation supplied into the processing container, A dielectric material is provided with its first surface facing the processing container, An electromagnetic wave supply unit configured to supply the electromagnetic waves into the processing container via the dielectric, A resonator array structure provided between the first space and the second space, comprising a plurality of resonators that are capable of resonating with the magnetic field component of the electromagnetic wave, have a size smaller than the wavelength of the electromagnetic wave, and are arranged in the same plane; A control unit configured to control the generation of the plasma in the first space and the second space, A drive unit configured to change the distance between the first surface of the dielectric and the resonator array structure, It has, The first space is the space between the first surface of the dielectric and the resonator array structure, The plasma control method for a plasma processing apparatus, wherein the second space is the space between the resonator array structure and the substrate support portion, The control unit controls the drive unit to change the distance so that the space where the plasma is generated becomes either the first space or the second space. Plasma control method. (16) a) Before the substrate is brought into the processing container, the plasma is generated in the second space, b) Generating the plasma in the first space while the substrate is supported by the substrate support portion, c) After the substrate is removed from the processing container, the plasma is generated in the second space, A plasma control method according to (14) or (15) above, comprising: (17) The above a) is a pre-coating treatment for the second space, b) above is an etching treatment or film deposition treatment on the substrate, c) above is a cleaning process within the second space, The plasma control method described in (16) above. (18) d) Generating the plasma in the first space while the substrate is supported by the substrate support portion, e) Generating the plasma in the second space while the substrate is supported by the substrate support portion, A plasma control method according to (14) or (15) above, comprising: (19) The above d) is an etching process on the substrate, e) above is an ashing process on the substrate. The plasma control method described in (18) above. [Explanation of Symbols]

[0196] 1,2 Plasma processing equipment 10,210,310,410 Main unit of the device 11 Control device 12,212,312,412,512 Processing containers 14,414 stages 16 RF power supply 20,220 Dielectric windows 20a,220a bottom surface 30 Antennas 38 Gas Supply Department 100, 100a, 100b, 100c Resonator Array Structure 100b1,100c1 1st layer 100b2,100c2 2nd layer 101,101a,101b,121,121a,121b,121A resonator 118,133,133a Through hole 217,390,490 Drive unit S1,S2 space WP board δ S1 ,δ S2 separation distance

Claims

1. A processing vessel configured to include a first space and a second space for generating plasma, A substrate support portion configured to support the substrate within the processing container, An electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation supplied into the processing container, A dielectric material is provided with its first surface facing the processing container, An electromagnetic wave supply unit configured to supply the electromagnetic waves into the processing container via the dielectric, A resonator array structure provided between the first space and the second space, comprising a plurality of resonators that are capable of resonating with the magnetic field component of the electromagnetic wave, have a size smaller than the wavelength of the electromagnetic wave, and are arranged in the same plane; The system includes a control unit configured to control the generation of the plasma in the first space and the second space, The first space is the space between the first surface of the dielectric and the resonator array structure. The second space is the space between the resonator array structure and the substrate support portion. Plasma processing equipment.

2. The shower head further comprises a partition between the first space and the second space, and is configured to include the resonator array structure and a through hole that connects the first space and the second space. The plasma processing apparatus according to claim 1.

3. The control unit controls the supply time of the electromagnetic waves in the electromagnetic wave generator in a pulsed manner so that the space where the plasma is generated becomes the first space or the second space. The plasma processing apparatus according to claim 1 or 2.

4. The control unit generates the plasma in the first space by controlling the electromagnetic wave generator so that the supply time is 10 ms or less. The plasma processing apparatus according to claim 3.

5. The control unit generates the plasma in the second space by controlling the electromagnetic wave generator so that the supply time exceeds 10 ms. The plasma processing apparatus according to claim 3.

6. The control unit controls the electromagnetic wave generator so that the interval between pulses of the electromagnetic wave is 10 μs or more. The plasma processing apparatus according to claim 3.

7. The control unit controls the electromagnetic wave generator so that the duty cycle of the electromagnetic wave pulses is 90% or more. The plasma processing apparatus according to claim 3.

8. The distance between the first surface of the dielectric and the resonator array structure in the first space is less than 50 mm. The plasma processing apparatus according to claim 3.

9. The device further includes a drive unit configured to change the distance between the first surface of the dielectric and the resonator array structure by changing the position of the dielectric, The control unit controls the drive unit to change the distance so that the space where the plasma is generated becomes the first space or the second space. The plasma processing apparatus according to claim 1.

10. The device further includes a drive unit configured to change the distance between the first surface of the dielectric and the resonator array structure by changing the position of the resonator array structure, The control unit controls the drive unit to change the distance so that the space where the plasma is generated becomes the first space or the second space. The plasma processing apparatus according to claim 1.

11. The drive unit is further configured to change the distance between the first surface of the dielectric and the resonator array structure by changing the position of the substrate support and the resonator array structure as a single unit, The control unit controls the drive unit to change the distance so that the space where the plasma is generated becomes the first space or the second space. The plasma processing apparatus according to claim 1.

12. The control unit generates the plasma in the first space by controlling the drive unit so that the distance is 50 mm or more. The plasma processing apparatus according to any one of claims 9 to 11.

13. The control unit generates the plasma in the second space by controlling the drive unit so that the distance is less than 50 mm. The plasma processing apparatus according to any one of claims 9 to 11.

14. A processing vessel configured to include a first space and a second space for generating plasma, A substrate support portion configured to support the substrate within the processing container, An electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation supplied into the processing container, A dielectric material is provided with its first surface facing the processing container, An electromagnetic wave supply unit configured to supply the electromagnetic waves into the processing container via the dielectric, A resonator array structure provided between the first space and the second space, comprising a plurality of resonators that are capable of resonating with the magnetic field component of the electromagnetic wave, have a size smaller than the wavelength of the electromagnetic wave, and are arranged in the same plane; The system includes a control unit configured to control the generation of the plasma in the first space and the second space, The first space is the space between the first surface of the dielectric and the resonator array structure. The second space is the space between the resonator array structure and the substrate support portion, in a plasma control method for a plasma processing apparatus. The control unit controls the supply time of the electromagnetic waves in the electromagnetic wave generator in a pulsed manner so that the space where the plasma is generated becomes the first space or the second space. Plasma control method.

15. A processing vessel configured to include a first space and a second space for generating plasma, A substrate support portion configured to support the substrate within the processing container, An electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation supplied into the processing container, A dielectric material is provided with its first surface facing the processing container, An electromagnetic wave supply unit configured to supply the electromagnetic waves into the processing container via the dielectric, A resonator array structure provided between the first space and the second space, comprising a plurality of resonators that are capable of resonating with the magnetic field component of the electromagnetic wave, have a size smaller than the wavelength of the electromagnetic wave, and are arranged in the same plane; A control unit configured to control the generation of the plasma in the first space and the second space, A drive unit configured to change the distance between the first surface of the dielectric and the resonator array structure, It has, The first space is the space between the first surface of the dielectric and the resonator array structure. The second space is the space between the resonator array structure and the substrate support portion, in a plasma control method for a plasma processing apparatus. The control unit controls the drive unit to change the distance so that the space where the plasma is generated becomes either the first space or the second space. Plasma control method.

16. a) Before the substrate is brought into the processing container, the plasma is generated in the second space, b) Generating the plasma in the first space while the substrate is supported by the substrate support portion, c) After the substrate is removed from the processing container, the plasma is generated in the second space, A plasma control method according to claim 14 or 15, comprising:

17. The above a) is a pre-coating treatment for the second space, b) above is an etching treatment or film deposition treatment on the substrate, c) above is a cleaning process applied to the second space. The plasma control method according to claim 16.

18. d) Generating the plasma in the first space while the substrate is supported by the substrate support portion, e) Generating the plasma in the second space while the substrate is supported by the substrate support portion, A plasma control method according to claim 14 or 15, comprising:

19. The above d) is an etching process on the substrate, e) above is an ashing process on the substrate. The plasma control method according to claim 18.

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