Electronic source

Abstract

To provide an electron source capable of improving performance. [Solution] According to the embodiment, the electron source includes a first member. The first member includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has a first bandgap energy and is p-type. The second semiconductor layer includes a first region. The first region has a second bandgap energy that is greater than the first bandgap energy and is n-type.

Description

Technical Field

[0001] Embodiments of the present invention relate to an electron source.

Background Art

[0002] For example, electrons emitted from an electron source are applied to an electronic device such as an electron drawing device. Improvement in characteristics is desired in the electron source.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments of the present invention provide an electron source capable of improving characteristics.

Means for Solving the Problems

[0005] According to an embodiment of the present invention, an electron source includes a first member. The first member includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has a first bandgap energy and is p-type. The second semiconductor layer includes a first region. The first region has a second bandgap energy greater than the first bandgap energy and is n-type.

Brief Description of the Drawings

[0006] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating an electron source according to a first embodiment. [Figure 2] FIG. 2 is a schematic diagram illustrating an electron source according to a first embodiment. [Figure 3] FIGS. 3(a) and 3(b) are schematic diagrams illustrating an electron source according to a first embodiment. [Figure 4]Figure 4 is a schematic cross-sectional view illustrating an electron source according to the second embodiment. [Figure 5] Figure 5 is a schematic diagram illustrating an electron source according to the second embodiment. [Figure 6] Figures 6(a) to 6(c) are schematic diagrams illustrating an electron source according to the second embodiment. [Modes for carrying out the invention]

[0007] Embodiments of the present invention will be described below with reference to the drawings. Drawings are schematic or conceptual, and the relationships between the thickness and width of each part, as well as the ratios of the sizes of different parts, are not necessarily identical to those of reality. Even when representing the same part, the dimensions and ratios may differ between drawings. In this specification and in each figure, elements similar to those described above are denoted by the same reference numerals with respect to previously shown figures, and detailed explanations are omitted as appropriate.

[0008] (First Embodiment) Figure 1 is a schematic cross-sectional view illustrating an electron source according to the first embodiment. As shown in Figure 1, the electron source 110 according to the embodiment includes a first member 10M. The first member 10M includes a first semiconductor layer 10 and a second semiconductor layer 20. The second semiconductor layer 20 includes a first region 21.

[0009] The first direction D1 from the first semiconductor layer 10 to the second semiconductor layer 20 is defined as the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to both the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

[0010] The first semiconductor layer 10, the second semiconductor layer 20, and the first region 21 are layered along the XY plane. The first semiconductor layer 10 includes a first surface 10F facing the first region 21. The first surface 10F is aligned with the XY plane.

[0011] In the embodiment, the first semiconductor layer 10 is In x Al y Ga1-x-y It contains N(0≦x≦1, 0≦y≦1, x+y≦1) and magnesium. The first semiconductor layer 10 is, for example, a p-type nitride layer.

[0012] The first region 21 contained in the second semiconductor layer 20 contains diamond and a first element. The first element contains at least one selected from the group consisting of phosphorus and nitrogen. The first region 21 contains, for example, n-type diamond.

[0013] When light L1 is incident on such a first member 10M, electrons 81 are emitted. In this embodiment, highly efficient electron emission can be obtained.

[0014] For example, when light L1 is irradiated, mobile carriers (electrons) are generated in the first semiconductor layer 10. The generated electrons 81 efficiently move to the second semiconductor layer 20 (e.g., the first region 21). The electrons 81 are efficiently radiated to the outside from the second semiconductor layer 20 (e.g., the first region 21). High electron emission efficiency can be obtained. According to the embodiment, an electron source capable of improving characteristics is provided. For example, by combining a p-type first semiconductor layer 10 and an n-type first region 21, electrons 81 can efficiently move to the first region 21.

[0015] Thus, the second semiconductor layer 20 is configured to emit electrons 81 in response to light L1 incident on the first member 10M.

[0016] As shown in Figure 1, the electron source 110 may further include a light-emitting unit 50. The light-emitting unit 50 is configured to incident light L1 onto the first member 10M. The light-emitting unit 50 may include, for example, a semiconductor light-emitting element (e.g., an LED). In one example, the first semiconductor layer 10 is located between the light-emitting unit 50 and the first region 21.

[0017] As shown in Figure 1, and as already described, the first semiconductor layer 10 includes a first surface 10F facing the first region 21. The first surface 10F is aligned with the XY plane. Multiple light-emitting units 50 may be provided. The electron source 110 may include multiple light-emitting units 50. The multiple light-emitting units 50 are aligned along the first surface 10F. At least some of the multiple light-emitting units 50 may be aligned along a second direction D2 that intersects with a first direction D1. At least some of the multiple light-emitting units 50 may be aligned along a third direction D3. The third direction D3 intersects with a plane that includes the first direction D1 and the second direction D2.

[0018] The light L1 emitted from each of the multiple light-emitting parts 50 may be incident on different positions on the first member 10M. Electrons 81 may be emitted from different positions on the first member 10M.

[0019] In one example, the composition ratio x may be between 0 and 0.5. In this case, the composition ratio y may be between 0 and 0.1. When light L1 is irradiated, mobile electrons 81 can be efficiently generated.

[0020] The concentration of the first element (e.g., phosphorus or nitrogen) in region 1 21 is 1 × 10⁻⁶. 18 cm -3 That's all. The first region 21 functions effectively as an n-type region. The magnesium concentration in the first semiconductor layer 10 is 1 × 10⁻⁶. 18 cm -3 That's all. The first semiconductor layer 10 functions effectively as a p-type layer.

[0021] As shown in Figure 1, the thickness of the first region 21 in the first direction D1 from the first semiconductor layer 10 to the first region 21 is defined as the first region thickness t21. In this embodiment, the first region thickness t21 is preferably 12 nm or more. Such a first region thickness t21 effectively lowers the barrier to electrons 81 moving from the first semiconductor layer 10 to the first region 21. For example, electrons 81 can move to the first region 21 efficiently. Higher efficiency is easily obtained. The first region thickness t21 may be, for example, 3 nm or more and 100 nm or less.

[0022] As shown in Figure 1, the thickness of the first semiconductor layer 10 in the first direction D1 is defined as the first thickness t1. In the embodiment, the first thickness t1 may be, for example, 10 nm or more and 1000 nm or less.

[0023] Figure 2 is a schematic diagram illustrating an electron source according to the first embodiment. Figure 2 illustrates the band profile at electron source 110. The horizontal axis in Figure 2 represents the position in the Z-axis direction. Figure 2 illustrates the valence band energy Ev and the conduction band energy Ec.

[0024] As shown in Figure 2, the p-type first semiconductor layer 10 is in contact with the n-type first region 21. Charge moves such that the Fermi level Ef of the first semiconductor layer 10 matches the Fermi level Ef of the first region 21. As a result, a diffusion potential is generated between the first semiconductor layer 10 and the first region 21. The conduction band energy Ec in the first region 21 decreases along the direction from the first semiconductor layer 10 to the first region 21. When light L1 is incident on the first semiconductor layer 10, electrons 81 are excited to the conduction band energy Ec by the energy hν1 of the light L1. Electrons 81 can move from the first semiconductor layer 10 to the first region 21, overcoming the barrier between the conduction band energy Ec in the first semiconductor layer 10 and the conduction band energy Ec in the first region 21. Electrons 81 that have moved to the first region 21 are efficiently emitted from the first region 21 to the outside. Electrons 81 are emitted with high efficiency to the outside of the vacuum level VL.

[0025] For example, the conduction band energy Ec in the first region 21 is lower than the conduction band energy Ec in the first semiconductor layer 10. Electrons 81 can efficiently cross the barrier.

[0026] For example, the first semiconductor layer 10 has a first bandgap energy Eg1. The first region 21 has a second bandgap energy Eg2. The first bandgap energy Eg1 is smaller than the second bandgap energy Eg2. Due to this energy relationship, for example, electrons 81 can be efficiently generated within the first semiconductor layer 10. Efficient electron emission can be obtained.

[0027] For example, the first member 10M includes a first semiconductor layer 10 which is p-type and has a first bandgap energy Eg1, and a second semiconductor layer 20 which includes a first region 21. The first region 21 has a second bandgap energy Eg2 which is greater than the first bandgap energy Eg1, and is n-type. Such a first member 10M can provide highly efficient electron emission. It can provide an electron source with improved characteristics.

[0028] Light L1 is incident on a first member 10M having such a bandgap energy relationship and different conductivity types. The second semiconductor layer 20 (for example, the first region 21) is configured to emit electrons 81 in response to the light L1 incident on the first member 10M. The energy hν1 of light L1 is greater than the first bandgap energy Eg1. High-efficiency electron emission can be obtained.

[0029] For example, even if the energy hν1 of light L1 is less than the second bandgap energy Eg2, if the energy hν1 of light L1 is greater than the first bandgap energy Eg1, electrons 81 can be generated within the first semiconductor layer 10.

[0030] The peak wavelength of light L1 can be, for example, between 230 nm and 700 nm. Electron 81 is efficiently excited.

[0031] The light-emitting part 50 is configured to make light L1 incident on a first member 10M that includes the above-described relationship of bandgap energies and has different conduction types from each other. For example, the first semiconductor layer 10 is between the light-emitting part 50 and the first region 21. The electron source 110 may include a plurality of light-emitting parts 50. The plurality of light-emitting parts 50 are arranged along the first surface 10F. The light L1 emitted from each of the plurality of light-emitting parts 50 may be incident on different positions of the first member 10M. Electrons 81 are emitted from different positions of the first member 10M.

[0032] In the first member 10M that includes the above-described relationship of bandgap energies and has different conduction types from each other, the first semiconductor layer 10 may contain In x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, x + y≦1). The first region 21 may contain diamond.

[0033] The n-type impurity concentration in the first region 21 may be, for example, 1×10 18 cm -3 or more. The p-type impurity concentration in the first semiconductor layer 10 may be, for example, 1×10 18 cm -3 or more. The n-type carrier concentration in the first region 21 may be, for example, 1×10 18 cm -3 or more. The p-type carrier concentration in the first semiconductor layer 10 may be, for example, 1×10 18 cm -3 [[ID=3]]or more. The n-type impurity concentration in the first region 21 may be, for example, 1×10 21 cm -3 or less. The p-type impurity concentration in the first semiconductor layer 10 may be, for example, 1×10 20 cm -3 or less. The n-type carrier concentration in the first region 21 may be, for example, 1×10 21 cm -3 or less. The p-type carrier concentration in the first semiconductor layer 10 may be, for example, 1×10 20 cm​​​​​In this embodiment, the composition ratio x may be between 0 and 0.1. In this case, the composition ratio y may be between 0.1 and 0.5. Electrons 81 can be efficiently transferred to the first region 21.

[0035] In this embodiment, the composition ratio x may be 0. In this case, the composition ratio y may be between 0 and 0.5. The first semiconductor layer 10 is, for example, a ternary nitride layer. Good crystals are easily obtained. High efficiency is easily obtained.

[0036] The surface of the second semiconductor layer 20 may be terminated with a second element EL2. The electronegativity of the second element EL2 is lower than that of the first element EL1 contained in the second semiconductor layer 20. The first element EL1 is, for example, the main element contained in the second semiconductor layer 20. With such a configuration, for example, an electric dipole ED is generated on the surface of the second semiconductor layer 20, and electrons 81 are effectively emitted from the second semiconductor layer 20 to the outside.

[0037] In one example, the first element EL1 may be carbon. In this case, the second element EL2 may be at least one selected from the group consisting of hydrogen, cesium, and scandium. A strong electric dipole ED is easily obtained. High efficiency is easily obtained.

[0038] For example, the vacuum level VL is lower than the conduction band energy Ec in the first region 21. Electrons 81 are efficiently released into the vacuum (outside).

[0039] Figures 3(a) and 3(b) are schematic diagrams illustrating an electron source according to the first embodiment. These figures illustrate the results of band profile simulations. In Figure 3(a), the first region thickness t21 is 10 nm. In Figure 3(b), the first region thickness t21 is 15 nm. In this example, the first semiconductor layer 10 is In x Al y Ga 1-x-y It includes N(0≦x≦1, 0≦y≦1, x+y≦1). In the examples in Figures 3(a) and 3(b), the composition ratio x is 0. The composition ratio y is 0.4. The concentration of n-type impurities in the first region 21 is 1 × 10⁻⁶.19 cm -3 That concludes the explanation. The p-type impurity concentration in the first semiconductor layer 10 is 1 × 10⁻⁶. 19 cm -3 That's all.

[0040] As shown in Figure 3(a), when the thickness t21 of the first region is 10 nm, at the boundary where the first region 21 and the first semiconductor layer 10 are in contact with each other, the conduction band energy Ec in the first region 21 is higher than the conduction band energy Ec in the first semiconductor layer 10.

[0041] As shown in Figure 3(b), when the thickness t21 of the first region is 15 nm, at the boundary where the first region 21 and the first semiconductor layer 10 are in contact with each other, the conduction band energy Ec in the first region 21 is lower than the conduction band energy Ec in the first semiconductor layer 10.

[0042] For example, when the first region thickness t21 is 12 nm or more, electron emission with high efficiency is easily obtained. The first region thickness t21 can also be 15 nm or more.

[0043] (Second Embodiment) Figure 4 is a schematic cross-sectional view illustrating an electron source according to the second embodiment. As shown in Figure 4, the electron source 111 according to this embodiment includes a first member 10M. In the electron source 111, the second semiconductor layer 20 includes a second region 22 in addition to the first region 21. The configuration of the electron source 111, excluding this, may be the same as that of the electron source 110.

[0044] In the electron source 111, the first region 21 lies between the first semiconductor layer 10 and the second region 22. The second region 22 has a third bandgap energy Eg3 that is greater than the first bandgap energy Eg1 and is p-type. For example, the second region 22 contains diamond and boron.

[0045] In such an electron source 111, when light L1 is irradiated onto the first member 10M, mobile electrons 81 are generated in the first semiconductor layer 10. The generated electrons 81 efficiently move to the first region 21 and then to the second region 22. The electrons 81 are efficiently emitted to the outside from the second region 22. High electron emission efficiency can be obtained. According to this embodiment, an electron source capable of improving properties is provided.

[0046] As shown in Figure 4, the thickness of the second region 22 in the first direction D1 from the first semiconductor layer 10 to the first region 21 is defined as the second region thickness t22. The second region thickness t22 can be, for example, 3 nm or more and 100 nm or less. When the second region thickness t22 is 3 nm or more, for example, the conductivity of holes increases. For example, positive charging due to electron emission can be suppressed. When the second region thickness t22 is 100 nm or less, for example, the conduction band energy Ec in the second region decreases. For example, it becomes easier to obtain electron emission with high efficiency.

[0047] Figure 5 is a schematic diagram illustrating an electron source according to the second embodiment. Figure 5 illustrates the band profile in the electron source 111. The third band gap energy Eg3 in the second region 22 is, for example, greater than the first band gap energy Eg1. When light L1 is incident on the first semiconductor layer 10, electrons 81 are excited to the conduction band energy Ec by the energy hν1 of light L1. Electrons 81 move from the first semiconductor layer 10 to the first region 21, overcoming the barrier between the conduction band energy Ec in the first semiconductor layer 10 and the conduction band energy Ec in the first region 21, and then to the second region 22. Electrons 81 that have moved to the second region 22 are efficiently emitted to the outside from the second region 22.

[0048] Figures 6(a) to 6(c) are schematic diagrams illustrating an electron source according to the second embodiment. These figures illustrate the simulation results of the band profile. In Figure 6(a), the n-type impurity concentration ND1 in the first region 21 is 1 × 10⁻⁶. 19 cm -3In Figure 6(b), the concentration of n-type impurities ND1 in the first region 21 is 2 × 10⁻⁶. 19 cm -3 In Figure 6(c), the n-type impurity concentration ND1 in the first region 21 is 3 × 10⁻⁶. 19 cm -3 In these examples, the concentration of p-type impurities in the second region 22 is 1 × 10⁻⁶. 19 cm -3 In these examples, the first region 21 and the second region 22 are diamond. The first semiconductor layer 10 is In x Al y Ga 1-x-y The region N includes (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, x + y ≤ 1). The composition ratio x is 0. The composition ratio y is 0.4. In these examples, the thickness of the first region t21 and the thickness of the second region t22 are 10 nm each.

[0049] As shown in Figure 6(a), in this example, the impurity concentration ND1 is 1 × 10⁻⁶. 19 cm -3 In this case, the conduction band energy Ec in the second region 22 is higher than the conduction band energy Ec in the first semiconductor layer 10.

[0050] As shown in Figure 6(b), in this example, the impurity concentration ND1 is 2 × 10⁻⁶. 19 cm -3 In this case, the conduction band energy Ec in the second region 22 is lower than the conduction band energy Ec in the first semiconductor layer 10. High-efficiency electron emission can be obtained.

[0051] As shown in Figure 6(c), in this example, the impurity concentration ND1 is 3 × 10⁻⁶. 19 cm -3 In this case, the conduction band energy Ec in the second region 22 is significantly lower than the conduction band energy Ec in the first semiconductor layer 10. This allows for more efficient electron emission.

[0052] In this embodiment, for example, the diffusion potential at the junction between the p-type electron-supplying layer and the n-type diamond layer lowers the potential of the diamond layer. This reduces the energy barrier between the electron-supplying layer and the diamond, resulting in highly efficient electron emission.

[0053] (Third embodiment) The third embodiment relates to an electronic device. The electronic device includes an electron source (e.g., electron source 110 or electron source 111, etc.) according to the first or second embodiment. The electronic device may include at least one selected from the group consisting of, for example, an electron beam lithography apparatus, a processing apparatus, and an analytical apparatus. An electronic device capable of improving characteristics is provided.

[0054] Information regarding length and thickness can be obtained through electron microscopy observation, etc. Information regarding the material composition can be obtained through SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy dispersive X-ray spectroscopy), etc. Based on the information regarding the material composition, information regarding the material's energy may be obtained.

[0055] The embodiments may include the following technical proposals. (Technical proposal 1) A first semiconductor layer of the p type having a first bandgap energy, A second semiconductor layer comprising a first region, wherein the first region has a second bandgap energy greater than the first bandgap energy and is n-type, An electron source comprising a first component including the following.

[0056] (Technical proposal 2) The first semiconductor layer is In x Al y Ga 1-x-y An electron source as described in Technical Proposal 1, including N(0≦x≦1, 0≦y≦1, x+y≦1).

[0057] (Technical proposal 3) The first region is an electron source according to Technical Proposal 2, which includes diamond.

[0058] (Technical proposal 4) In x Al y Ga 1-x-y A first semiconductor layer containing magnesium and including N(0≦x≦1, 0≦y≦1, x+y≦1), A second semiconductor layer comprising a first region, wherein the first region comprises a first element comprising diamond and at least one selected from the group consisting of phosphorus and nitrogen, An electron source comprising a first component including the following.

[0059] (Technical proposal 5) The electron source according to Technical Proposal 4, wherein the second semiconductor layer is configured to emit electrons in response to light incident on the first member.

[0060] (Technical proposal 6) The electron source according to any one of the technical proposals 1 to 3, wherein the second semiconductor layer is configured to emit electrons in response to light incident on the first member. (Technical proposal 7) The electron source according to Technical Proposal 6, wherein the energy of the light is greater than the first bandgap energy.

[0061] (Technical proposal 8) It also includes a light-emitting section, The light-emitting part is configured to emit light into the first member, as described in Technical Proposal 7, which is an electron source.

[0062] (Technical proposal 9) Multiple light-emitting units are provided, The first semiconductor layer includes a first surface facing the first region, The plurality of light-emitting units are arranged along the first surface and are electron sources according to Technical Proposal 8.

[0063] (Technical proposal 10) The first semiconductor layer is an electron source according to technical proposal 8 or 9, located between the light-emitting portion and the first region.

[0064] (Technical proposal 11) The electron source according to Technical Proposal 8 or 9, wherein the peak wavelength of the light is between 230 nm and 700 nm.

[0065] (Technical proposal 12) The second semiconductor layer further includes a second region, The first region is located between the first semiconductor layer and the second region. The electron source according to any one of the technical proposals 1 to 3, wherein the second region has a third band gap energy greater than the first band gap energy and is p-type.

[0066] (Technical proposal 13) The second semiconductor layer further includes a second region, The first region is located between the first semiconductor layer and the second region. The second region is an electron source according to Technical Proposal 4 or 5, which includes diamond and boron.

[0067] (Technical proposal 14) The electron source according to Technical Proposal 13, wherein the second region thickness of the second region in the first direction from the first semiconductor layer to the first region is 3 nm or more and 100 nm or less.

[0068] (Technical proposal 15) The electron source according to any one of the technical proposals 1 to 13, wherein the first region thickness of the first region in a first direction from the first semiconductor layer to the first region is 12 nm or more.

[0069] (Technical proposal 16) The concentration of n-type impurities in the first region is 1 × 10⁻⁶ 18 cm -3 The above is an electron source described in any one of Technical Proposals 1 to 3.

[0070] (Technical proposal 17) The p-type impurity concentration in the first semiconductor layer is 1 × 10⁻⁶. 18 cm -3The above is an electron source described in any one of Technical Proposals 1 to 3.

[0071] (Technical proposal 18) The concentration of the first element in the first region is 1 × 10⁻⁶ 18 cm -3 That's all. The magnesium concentration in the first semiconductor layer is 1 × 10⁻⁶ 18 cm -3 The above is the electron source described in Technical Proposal 4 or 5.

[0072] (Technical proposal 19) The aforementioned x is between 0 and 0.5, The electron source described in Technical Proposal 4 or 5, wherein y is 0 or greater and 0.1 or less.

[0073] (Technical proposal 20) The aforementioned x is between 0 and 0.1, The electron source according to Technical Proposal 4 or 5, wherein y is 0.1 or more and 0.5 or less.

[0074] According to the embodiment, an electron source and an electronic device capable of improving characteristics are provided.

[0075] Embodiments of the present invention have been described above with reference to examples. However, the present invention is not limited to these examples. For example, the specific configuration of each element, such as the components included in the electron source, the semiconductor layer, and the light-emitting part, is included within the scope of the present invention as long as it can be implemented in the same way and similar effects can be obtained by appropriately selecting from the range known to those skilled in the art.

[0076] Combinations of two or more elements from each example, to the extent technically feasible, are also included within the scope of the present invention, insofar as they encompass the gist of the invention.

[0077] All electron sources that a person skilled in the art can implement by appropriately modifying the design based on the electron source described above as an embodiment of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention.

[0078] Within the scope of the concept of this invention, a person skilled in the art would be able to conceive of various modifications and alterations, and it is understood that such modifications and alterations also fall within the scope of this invention.

[0079] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0080] 10, 20: First and second semiconductor layers, 10F: First surface, 10M: First component, 21, 22: First and second regions, 50: Light-emitting part, 81: Electron, 110, 111: Electron source, ND1: Impurity concentration, D1~D3: First to third directions, ED: Electric dipole, Ec: Conduction band energy, Ef: Fermi level, Eg1~Eg3: First to third bandgap energy, Ev: Valence band energy, L1: Light, VL: Vacuum level, hν1: Energy, t1: First thickness, t21, t22: First and second region thickness

Claims

1. A first p-type semiconductor layer having a first bandgap energy, A second semiconductor layer including a first region, wherein the first region has a second bandgap energy greater than the first bandgap energy and is n-type, An electron source comprising a first component including the following.

2. The first semiconductor layer is In ｘ Al ｙ Ga １－ｘ－ｙ The electron source according to claim 1, including N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, x + y ≤ 1).

3. The electron source according to claim 2, wherein the first region includes diamond.

4. In ｘ Al ｙ Ga １－ｘ－ｙ A first semiconductor layer containing magnesium and N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, x + y ≤ 1), A second semiconductor layer comprising a first region, wherein the first region comprises a first element comprising diamond and at least one selected from the group consisting of phosphorus and nitrogen, An electron source comprising a first component including the following.

5. The electron source according to claim 4, wherein the second semiconductor layer is configured to emit electrons in response to light incident on the first member.

6. The electron source according to any one of claims 1 to 3, wherein the second semiconductor layer is configured to emit electrons in response to light incident on the first member.

7. The electron source according to claim 6, wherein the energy of the light is greater than the first bandgap energy.

8. It also includes a light-emitting section, The electron source according to claim 7, wherein the light-emitting portion is configured to incident the light onto the first member.

9. Multiple light-emitting units are provided, The first semiconductor layer includes a first surface facing the first region, The electron source according to claim 8, wherein the plurality of light-emitting units are arranged along the first surface.

10. The second semiconductor layer further includes a second region, The first region is located between the first semiconductor layer and the second region. The electron source according to any one of claims 1 to 3, wherein the second region has a third band gap energy greater than the first band gap energy and is p-type.

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