Process module chamber providing a symmetrical RF return path

Abstract

An apparatus including a multi-station processing chamber having a top plate and a bottom portion surrounds stations each including a pedestal assembly. A spindle located centrally between the stations is configured to rotate about a central axis and is electrically connected to the bottom portion. An actuator controls movement of the spindle in a Z direction. An indexer connected to the spindle includes extensions that rotate with the spindle and are each configured to interface with a corresponding substrate for substrate transfer. A conductive interface movably connected to the top plate provides an RF return path. Another actuator coupled to a ground interface controls movement of the conductive interface in the Z direction. The conductive interface moves downward in the Z direction to contact the indexer when each of the multiple extensions is stopped and the spindle is moved to a lower position during plasma processing.

Description

Technical Field

[0004] ,

[0001] This embodiment relates to semiconductor wafer processing equipment tools, and more particularly to a multi-station chamber having a more symmetric high-frequency (RF) ground return path for each station passing through the center of the chamber.

Background Art

[0002] In the field of semiconductor fabrication, many types of film deposition processes are commonly used. One exemplary process is called plasma enhanced chemical vapor deposition (PECVD), which is a type of plasma deposition used to deposit thin films from a gaseous state (i.e., vapor) to a solid state onto a substrate such as a wafer. A PECVD system converts a liquid precursor to a vapor precursor, and the vapor precursor is fed into the chamber. The PECVD system can include a vaporizer that vaporizes the liquid precursor in a controlled manner to produce the vapor precursor.

[0003] Another exemplary film deposition process is called atomic layer deposition (ALD), which also utilizes plasma energy to facilitate deposition. An ALD system is used to generate very thin films that are highly conformal, smooth, and have excellent physical properties. ALD uses volatile gases, solids, or vapors that are continuously introduced (or pulsed) onto a heated substrate. A first precursor is introduced as a gas, absorbed (or adsorbed) onto the substrate, and the gaseous precursor is removed from the reactor chamber. A second precursor is introduced as a gas and reacts with the absorbed precursor to form a single layer of the desired material. By adjusting this sequence, the film generated by ALD is deposited one layer at a time by repeatedly switching the continuous flow of two or more reactive gases over the substrate.

[0004] Chambers used for processing PECVD and ALD processes require a highly engineered structural configuration to ensure that the resulting film deposited on the substrate is as uniform as possible and that the process is repeatable from wafer to wafer. In such chambers, radio frequency (RF) power is supplied to enable the excitation of gas in the form of plasma, thereby depositing the material film. The RF power is typically supplied to either a substrate support (i.e., a pedestal) or a showerhead. In either configuration, the RF power applied to the chamber requires a return path. Generally, the conductive chamber walls provide this return path.

[0005] While this process has worked well in the past, increasing demand for manufacturing smaller feature sizes has continuously placed more stringent requirements on the chamber structure and designed geometry. For example, some chamber designs available for PECVD and ALD include multi-station designs. A multi-station design is one that allows the deposition process to be carried out at multiple stations simultaneously. Such multi-station designs add complexity associated with the processing of neighbors by other stations.

[0006] Furthermore, multi-station process modules that are not symmetrical with respect to each wafer may have problems with asymmetric RF return paths, especially at high frequencies. For example, the RF return path is not axially symmetric with respect to the corresponding wafer because it is located closer to the wafer at the edge of the chamber than the conductive path is located towards the rotation mechanism at the center of the chamber. This asymmetry can lead to non-uniformity on the corresponding wafer.

[0007] The background information provided herein is intended to provide a general overview of the contents of this disclosure. Any research by the inventors named at this time, as well as any description that is not otherwise considered prior art at the time of filing, within the scope described in this background information section, shall not be recognized as prior art to this disclosure, whether express or implied.

[0008] Embodiments of this disclosure arise in such circumstances. [Overview of the Initiative]

[0009] This embodiment relates to a process chamber used for processing semiconductor wafers. In particular, embodiments of this disclosure enhance the symmetry of the RF return path in a multi-station process chamber and reduce heterogeneity on the process wafer by providing a central RF return within the chamber. Several embodiments of the invention of this disclosure are described below.

[0010] Embodiments of the present disclosure provide an apparatus configured for plasma processing. The apparatus includes a multi-station processing chamber including an upper plate and a bottom portion, the multi-station processing chamber is configured to surround a plurality of stations, each including a pedestal assembly for supporting a substrate for processing. The apparatus includes a spindle located in the center between the plurality of stations and configured to rotate around a central axis, the spindle being electrically connected to the bottom portion. The apparatus includes a first actuator coupled to the spindle and configured to control the movement of the spindle in the Z direction. The apparatus includes an indexer coupled to the spindle and configured to rotate with the spindle, the indexer including a plurality of extensions, each configured to work in conjunction with a corresponding substrate for transfer between stations. The apparatus includes a conductive interface movably connected to the upper plate. The apparatus includes a second actuator coupled to the conductive interface and configured to control the movement of the conductive interface in the Z direction. The conductive interface is configured to move downward in the Z direction to contact the indexer when each of the plurality of extensions is stopped and the spindle is moved to a lower position during plasma processing.

[0011] Other embodiments of the present disclosure provide an apparatus configured for plasma processing. The apparatus includes a multi-station processing chamber including an upper plate and a bottom portion, the multi-station processing chamber is configured to surround a plurality of stations, each including a pedestal assembly for supporting a substrate for processing. The apparatus includes a spindle located centrally between the plurality of stations and configured to rotate around a central axis. The apparatus includes a first actuator coupled to the spindle and configured to control the movement of the spindle in the Z direction. The apparatus includes an indexer coupled to the spindle and configured to rotate with the spindle around a central axis, the indexer including a plurality of extensions, each configured to work in conjunction with a corresponding substrate for transfer between stations. The apparatus includes a conductive interface movably connected to the upper plate. The apparatus includes a second actuator coupled to the conductive interface and configured to control the movement of a ground interface in the Z direction. The conductive interface has a lower end portion spanning the diameter of the indexer. In addition, the conductive interface is configured to move downward in the Z direction and contact a conductive structure adjacent to the spindle and indexer when each of the multiple extensions is stopped and the spindle is moved to the lower position during plasma processing. The conductive structure is electrically coupled to the bottom portion.

[0012] Further embodiments of the present disclosure provide an apparatus configured for plasma processing. The apparatus includes a multi-station processing chamber including an upper plate and a bottom portion, the multi-station processing chamber is configured to surround a plurality of stations, each including a pedestal assembly for supporting a substrate for processing. The apparatus includes a spindle located centrally between the plurality of stations and configured to rotate around a central axis, the spindle being electrically connected to the bottom portion. The apparatus includes an actuator coupled to the spindle and configured to control the spindle's movement in the Z direction. The apparatus includes an indexer connected to the spindle and configured to rotate with the spindle, the indexer including a plurality of extensions, each configured to work in conjunction with a corresponding substrate for transfer between stations. The apparatus includes a conductive interface connected to the indexer. The spindle is configured to move upward in the Z direction toward a higher position so that the conductive interface contacts the upper portion during plasma processing. Each of the plurality of extensions is stopped when the spindle is in a higher position.

[0013] Further embodiments of the present disclosure provide an apparatus configured for plasma processing. The apparatus includes a multi-station processing chamber including an upper plate and a bottom portion, the multi-station processing chamber configured to surround a plurality of stations, each including a pedestal assembly for supporting a substrate for processing. The apparatus includes a spindle located centrally between the plurality of stations and configured to rotate around a central axis, the spindle being movable and electrically connected to the upper plate. The apparatus includes an actuator coupled to the spindle and configured to control the spindle's movement in the Z direction. The apparatus includes an indexer connected to the spindle and configured to rotate with the spindle, the indexer including a plurality of extensions, each configured to work in conjunction with a corresponding substrate for transfer between stations. The apparatus includes a conductive interface connected to the indexer. The apparatus includes a conductive structure electrically connected to the bottom portion. The spindle is configured to move downward in the Z direction toward a lower position so that the conductive interface contacts the conductive structure during plasma processing. Each of the plurality of extensions is stopped when the spindle is in the lower position.

[0014] Further embodiments of the present disclosure provide an apparatus configured for plasma processing. The apparatus includes a multi-station processing chamber including an upper plate and a bottom portion, the multi-station processing chamber is configured to surround a plurality of stations, each including a pedestal assembly for supporting a substrate for processing. The apparatus includes a spindle located centrally between the plurality of stations and configured to rotate around a central axis, the spindle being electrically connected to the bottom portion. The apparatus includes an actuator coupled to the spindle and configured to control the spindle's movement in the Z direction. The apparatus includes an indexer connected to the spindle and configured to rotate with the spindle, the indexer including a plurality of extensions, each configured to work in conjunction with a corresponding substrate for transfer between stations. The apparatus includes a conductive interface connected to the indexer, the ends of which extend into the progress space of the upper plate, and the conductive interface moves with the spindle. The apparatus includes a conductive (e.g., fluid) seal and bellows assembly connected to the upper plate around an opening in the progress space. The ends of the conductive interface engage with the electrically conductive seal and bellows assembly through bearings and make continuous contact with the upper plate when the spindle is stopped or moving in the Z direction. Each of the multiple extensions is stopped when the spindle is moved to a lower position during plasma processing.

[0015] Further embodiments of the present disclosure provide a device configured to facilitate an RF return path within a multi-station processing chamber. The device includes an upper post assembly, the upper post assembly being conductive. The device includes a lower post assembly, the lower post assembly being conductive, which is movably connected to the upper post assembly. The upper and lower post assemblies are configured to provide an RF return path between the upper plate and the bottom portion of the multi-station processing chamber.

[0016] These and other advantages will be understood by those skilled in the art by reading the entire specification and claims. [Brief explanation of the drawing]

[0017] Embodiments can be best understood by referring to the following description, which is to be interpreted in conjunction with the accompanying drawings.

[0018] [Figure 1] Figure 1 shows a substrate processing system used to process wafers, for example, to form a film on a wafer, according to one embodiment of the present disclosure.

[0019] [Figure 2] Figure 2 is a top view of a multi-station processing tool or chamber equipped with four processing stations, according to one embodiment.

[0020] [Figure 3] Figure 3 is a schematic diagram of one embodiment of a multi-station processing chamber having an inbound load lock and an outbound load lock, according to one embodiment.

[0021] [Figure 4A] Figure 4A is a cross-sectional view of a multi-station processing chamber according to one embodiment of the present disclosure, showing a conductive interface electrically coupled to the top of the chamber and configured to contact a rotating mechanism at the center of the chamber to provide a symmetrical RF return path for each station.

[0022] [Figure 4B] Figure 4B is a perspective view of a rotating mechanism showing possible RF return paths according to one embodiment of the present disclosure.

[0023] [Figure 5A]FIG. 5A is a cross-sectional view of a multi-station processing chamber showing a conductive interface configured to be electrically coupled to the top of the chamber and to contact a conductive structure to provide a symmetric RF return path for each station.

[0024] [Figure 5B] FIG. 5B is a view of an RF liner as a conductive structure showing the contacts of the conductive interface of FIG. 5A that provide a symmetric RF return path for each station, according to an embodiment of the present disclosure.

[0025] [Figure 5C] FIG. 5C is a perspective view of the RF liner as the conductive structure of FIG. 5B, according to an embodiment of the present disclosure.

[0026] [Figure 6] FIG. 6 is a perspective view of a conductive interface configured as a convoluted flexible cylinder, according to an embodiment of the present disclosure.

[0027] [Figure 7] FIG. 7 is a cross-sectional view of a multi-station processing chamber showing a conductive interface configured to be connected to a rotation mechanism at the center of the chamber and to contact the top plate of the chamber to provide a symmetric RF return path for each station.

[0028] [Figure 8] FIG. 8 is a cross-sectional view of a multi-station processing chamber showing a conductive interface connected to a rotation mechanism, configured to be electrically coupled to the top of the chamber and to contact a conductive structure at the center of the chamber to provide a symmetric RF return path for each station.

[0029] [Figure 9]Figure 9 is a cross-sectional view of a multi-station processing chamber according to one embodiment of the present disclosure, showing a conductive interface configured to provide a continuous electrical connection between the upper plate of the chamber and a rotating mechanism at the center of the chamber, and to provide a symmetrical RF return path for each station.

[0030] [Figure 10A] Figure 10A shows a drop-in passive or active apparatus according to one embodiment of the present disclosure, configured to facilitate the RF return path between the upper and lower portions of a multi-station processing chamber. [Figure 10B] Figure 10B shows a drop-in passive or active device according to one embodiment of the present disclosure, configured to facilitate the RF return path between the upper and lower portions of a multi-station processing chamber. [Figure 10C] Figure 10C shows a drop-in passive or active device according to one embodiment of the present disclosure, configured to facilitate the RF return path between the upper and lower portions of a multi-station processing chamber. [Figure 10D] Figure 10D shows a drop-in passive or active device according to one embodiment of the present disclosure, configured to facilitate the RF return path between the upper and lower portions of a multi-station processing chamber. [Figure 10E] Figure 10E shows a drop-in passive or active device according to one embodiment of the present disclosure, configured to facilitate the RF return path between the upper and lower portions of a multi-station processing chamber. [Figure 10F] Figure 10F shows a drop-in passive or active device according to one embodiment of the present disclosure, configured to facilitate the RF return path between the upper and lower portions of a multi-station processing chamber.

[0031] [Figure 11]Figure 11 shows a control module for controlling the system described above. [Modes for carrying out the invention]

[0032] The following detailed description includes many specific details for illustrative purposes, but those skilled in the art will understand that many variations and modifications of the following details are within the scope of this disclosure. Accordingly, the aspects of this disclosure described below are described without loss of generality to the claims that follow this description, and without imposing any limitations.

[0033] Generally speaking, various embodiments of this disclosure describe systems and apparatus for enhancing the symmetry of RF return paths within a multi-station process chamber by providing a central conductive path within the chamber to reduce non-uniformity on the process wafer. In embodiments, a multi-station chamber is disclosed, and in one embodiment, a quad-station module is disclosed arranged in a square configuration with a rotating mechanism at a central location. The quad-station module is configured to process four wafers on four pedestals in a large, open square chamber including an upper and a bottom portion. Each pedestal is configured to support a substrate and is located in a lower chamber portion including outer and inner walls that define the space for each of the four chamber pedestals. In some embodiments, each pedestal includes a carrier ring. In some embodiments, the carrier ring is called a plasma focus ring. The lower chamber portion includes outer and inner walls that define the space for each of the four chamber pedestals. The chamber further includes an upper chamber portion or upper plate. The upper chamber portion is configured to fit onto the lower chamber portion. The upper chamber section includes four showerheads, each of which is configured to align with its respective base on each station. In this embodiment, when radio frequency (RF) power is supplied to either the showerhead or base of each station, the RF power is supplied along with the RF return via conductive plates that symmetrically surround each process opening of each station.

[0034] In some embodiments, conductive structures (e.g., conductive interfaces, conductive plates, one or more conductive rods, etc.) are implemented to provide an RF return path. For example, a conductive plate can be positioned on the inner wall or mounted on the outer wall. The conductive plate has a central opening configured to receive a rotary mechanism and a process opening for stations having a diameter larger than the pedestal and / or carrier ring. Conventionally, there is no conductive path in the center of the chamber, but embodiments of the present disclosure provide a symmetrical conductive path for each station by adding a structure near the center of the spindle of a rotary mechanism that can electrically connect the upper plate and bottom portions of the chamber to each other and provide a central RF return path. This central conductive path can be implemented through the spindle of the rotary mechanism, or using separate conductive rods, or a set of rods near the spindle, or any suitable structure that provides a return to the lower portion of the chamber. This provides a more symmetrical RF return path for RF signals from the substrate and plasma through the showerhead to the upper plate. Embodiments of the present disclosure provide a more cost-effective solution for symmetric RF electrical conduction by using common aluminum material sizes and common machining features that allow for possible tolerance stack-up of the chambers. In one embodiment, a machined feature enables a non-helical spring-like structure used for a conductive interface electrically connecting the upper plate and lower portion of the chamber. While helical current paths can be undesirable due to the magnetic fields that may be generated or amplified, the stepped beam bending structure of the embodiments of this disclosure can cause the current to be zigzag, thereby reducing the harmful magnetic fields.

[0035] Advantages of various embodiments providing a central grounding structure for the chamber include increased symmetry of the RF return path with respect to each station in a multi-station chamber that is not symmetrical with respect to the wafer in the station. Further embodiments reduce heterogeneity in the process wafer by increasing the symmetry of the RF return paths between and between stations in a multi-station chamber.

[0036] With the above general understanding of various embodiments, exemplary details of the embodiments will now be described with reference to various drawings. Elements and / or components similarly numbered in one or more drawings are generally intended to have the same configuration and / or function. Furthermore, drawings may not be drawn to a constant scale but are intended to illustrate and highlight novel concepts. It will be apparent that these embodiments can be put into practice without some or all of these specific details. In other examples, well-known process operations are not described in detail so as not to unnecessarily obscure these embodiments.

[0037] Figure 1 shows a substrate processing system 100 used to process a wafer 101. The system includes a chamber 102 having a lower chamber portion 102b and an upper chamber portion 102a. A central column is configured to support a pedestal 140, which in one embodiment is a power supply electrode. The pedestal 140 is electrically coupled to a power supply 104 via a matched network 106. The power supply is controlled by a control module 110, for example, a controller. The control module 110 is configured to operate the substrate processing system 100 by executing a process input and control unit 108. The process input and control unit 108 may include a process recipe for depositing or forming a film on the wafer 101, such as power levels, timing parameters, process gases, and mechanical movement of the wafer 101.

[0038] The central column also includes lift pins (not shown) controlled by a lift pin control unit 122. The lift pins are used to raise the wafer 101 from the pedestal 140, allowing the end effector to lift the wafer and lower the wafer 101 after it has been placed on the end effector. The substrate processing system 100 further includes a gas supply manifold 112 connected to a process gas 114, for example, a gaseous chemical supply source from the facility. Depending on the process being performed, a control module 110 controls the supply of the process gas 114 through the gas supply manifold 112. The selected gas is then flowed into a showerhead 150 and distributed into a defined spatial volume between the surface of the showerhead 150 facing the wafer 101 and the wafer 101 residing on the pedestal 140. In the ALD process, the gas may be a reactant selected for absorption or reaction with the absorbed reactant.

[0039] In addition, the control module 110 can be configured to provide commands to the electrical conduction interface control unit 130 and the rotary mechanism control unit 135. In particular, the electrical conduction interface control unit 130 enables movement of the conductive interface in the Z direction (e.g., vertical) to provide contact with the spindle and indexer of the rotary mechanism, or to provide contact with a conductive structure intended to provide an RF return path. The rotary mechanism control unit 135 enables movement of the rotary mechanism, such as movement in the Z direction, movement of an extension that is interlocked with the substrate, and rotation of the substrate at the end of the extension.

[0040] Furthermore, the gas may or may not be pre-mixed. Appropriate valve adjustment and mass flow control mechanisms can be used to ensure that the correct gas is supplied during the process deposition and plasma treatment phases. The process gas exits the chamber through an outlet. A vacuum pump (e.g., a single- or two-stage mechanical dry pump and / or turbomolecular pump) draws out the process gas, and a closed-loop controlled flow limiting device, such as a throttle valve or pendulum valve, maintains the reactor at a sufficiently low pressure.

[0041] In one embodiment, a carrier ring 200 surrounding the outer region of the base 140 is also shown. The carrier ring 200 is configured to be located on a carrier ring support region that is lower than the wafer support region at the center of the base 140. The carrier ring includes an outer edge side of its disk structure, e.g., an outer radius, and a wafer edge side of its disk structure closest to where the wafer 101 is located, e.g., an inner radius. The wafer edge side of the carrier ring includes a plurality of contact support structures configured to lift the wafer 101 when the carrier ring 200 is lifted by the spider fork 180. Thus, the carrier ring 200 can be lifted together with the wafer 101 and rotated, for example, to another station in a multi-station system.

[0042] Figure 2 shows a top view of a multi-station processing tool equipped with four processing stations. This top view is of the lower chamber portion 102b (for example, the upper chamber portion 102a, including the upper plate 102c, has been removed for illustration purposes), and the four stations are accessed by spider forks 226. Each spider fork, or fork, includes first and second arms, each positioned around a portion of each side of the base 140. In this figure, the spider forks 226 are drawn with dashed lines to indicate that they are located beneath the carrier rings 200. The spider forks 226 are configured to use an engagement and rotation mechanism 220 to simultaneously raise and lift the carrier rings 200 away from the stations (i.e., from the underside of the carrier rings 200), and then rotate at least one or more stations before lowering the carrier rings 200 (at least one of the carrier rings supports a wafer 101) to the next position, thereby enabling further plasma processing, treatment, and / or film deposition on each wafer 101.

[0043] Figure 3 shows a schematic diagram of one embodiment of a multi-station processing tool 300 having an inbound load lock 302 and an outbound load lock 304. A robot 306 is configured to move a substrate from a cassette loaded via a pod 308 to the inbound load lock 302 via an atmospheric pressure port 310 at atmospheric pressure. The inbound load lock 302 is coupled to a vacuum source (not shown) and can therefore be pumped down when the atmospheric pressure port 310 is closed. The inbound load lock 302 also includes a chamber transport port 316 that works in conjunction with a processing chamber 102b. Thus, when the chamber transport 316 is opened, another robot (not shown) can move the substrate from the inbound load lock 302 to the base 140 of the first process station for processing.

[0044] The illustrated processing chamber 102b comprises four processing stations numbered 1 to 4 in the embodiment shown in Figure 3. In some embodiments, the processing chamber 102b may be configured to maintain a low-pressure environment so that substrates can be transferred between processing stations using the carrier ring 200 without experiencing vacuum break and / or air exposure. Each process station illustrated in Figure 3 includes a process station substrate holder (indicated as 318 for station 1) and a process gas supply line inlet.

[0045] Figure 3 also illustrates spider forks 226 for transporting substrates within the processing chamber 102b. For example, the chamber includes four spider forks, and carrier rings are positioned around the respective pedestals of each station in the multi-station process chamber. The spider forks 226 rotate, enabling the transport of substrates from one station to another. Transport is performed by allowing the spider forks 226 to lift the carrier rings 200 from their outer undersides, thereby lifting the substrates and rotating the substrates and carriers together to the next station. In this configuration, the spider forks can simultaneously lift each of the four carrier rings (and any substrates placed on them), and all of the carrier rings and substrates can be rotated to the next station (for example, for additional or different processing). In some embodiments, the carrier rings may be called plasma focus rings, which function to concentrate or optimize plasma processing across the entire surface of the substrate, including the edges of the substrate. For example, a plasma focus ring functions to extend the outer surface of the substrate so that non-uniformity at the edges extends to the outer surface edge of the plasma focus ring (i.e., instead of the substrate edge). In one configuration, the spider fork 226 is made from a ceramic material to withstand the high levels of heat during processing.

[0046] Embodiments of the present disclosure are understood to utilize any suitable means for the transfer, feeding, and rotation of wafers at or between stations. Some embodiments involve the use of a carrier ring, while others involve the use of a feeding system that is directly coupled to the substrate (i.e., without a ring). For example, in some embodiments, “ringless” substrate transfer may also be used. In such embodiments, the “carrier ring” or “plasma focusing ring” may remain fixed at one station, or there may be no ring at all. The substrate is moved by lifting it from a pedestal using pins, inserting a paddle under the wafer, and then lowering the substrate on the pins so that the paddle makes direct contact with the substrate. At this point, the substrate is indexed to another station using the paddle. When the substrate is located at the new station, the substrate is lifted from the paddle using pins, the paddle is rotated or moved out, and the pins are lowered so that the substrate makes direct contact with the pedestal. Here, substrate processing can continue at the new station for the indexed (i.e., moved) substrate. If the system has multiple stations, each of the boards (i.e., the boards present at each station) can be transported together, for example, simultaneously, in the same manner as in ringless board transport.

[0047] Embodiments of the present disclosure provide a symmetrical RF return path between the upper portion (e.g., upper plate) and the bottom portion of a multi-station processing chamber. Terms such as RF return path and RF return are understood to refer to the path used by the RF return current. For example, any RF return current coexists with the RF signal current provided by the RF power supply for wave propagation. Furthermore, it is understood that the RF return path can follow any low RF impedance path, such as between two or more components of the multi-station processing chamber (e.g., conductors), even if it does not follow a DC-enabled connection. That is, there may be no full contact or any contact between the components, but there is an RF connection providing the RF return path. For example, two adjacent conductors, having a dielectric or vacuum between them, can provide a low impedance capacitor configured as an RF return path without a DC connection. Generally, the presence of a conductive conductor is sufficient to provide the boundary conditions necessary for the RF return current in the RF return path. Thus, while conventional processing chambers include asymmetric conductive boundary conditions, embodiments of the present disclosure improve the symmetry of the boundary conditions guiding the RF field, thereby improving the symmetry of the discharge of RF power.

[0048] Figure 4A is a cross-sectional view of a multi-station processing chamber 400A according to one embodiment of the present disclosure, which is configured to include a central electrical conduction path of the chamber that enhances the symmetry of the RF return path for one or more stations and thereby reduces non-uniformity across the entire substrate. In particular, according to one embodiment of the present disclosure, the multi-station processing chamber 400A includes a conductive interface electrically coupled to the upper plate of the chamber and is configured to contact a rotating mechanism at the center of the chamber to provide a symmetrical RF return path for each station.

[0049] As shown, the multi-station processing chamber 400A includes an upper portion 102a, which includes an upper plate 102c, and a bottom portion 102b. The multi-station processing chamber 400A is configured to surround a plurality of stations, each station including a base 140 (e.g., an electrostatic chuck) of a base assembly for supporting substrates for processing. For clarity and brevity, only one station is shown in the cross-sectional view. As previously stated, the upper portion 102a includes a shower head 150, which is positioned on and aligned with the base 140 of the station, and the shower head 150 is electrically connected to the upper plate 102c.

[0050] The rotating mechanism 410 includes a spindle 410 and an indexer 410b, the indexer 410b may be one of a number of indexing mechanisms (e.g., spider fork, arm, etc.). The spindle 410a is located in the center between a number of stations and is configured to rotate around a central axis 470. The spindle 410a is electrically connected to a bottom portion 102b (e.g., a magnetic fluid seal and bellows assembly (not shown)). An actuator 465 is coupled to the spindle 410a and configured to control the movement of the spindle. In particular, the spindle 410a may be rotated and / or moved in the Z direction. In one embodiment, the actuator 465 may be controlled by a control module 110 in Figure 1.

[0051] The rotation mechanism also includes an indexer 410b connected to the spindle 410a, which can also be controlled by an actuator 465. The indexer 410b is configured to rotate with the spindle 410a. The indexer 410b is also configured to move in the Z direction as the spindle 410a moves. Although not shown, the indexer 410b includes a number of extensions, each of which is configured to interlock with the corresponding substrate for transfer between stations, as described above. For example, the indexer 410b and its extensions are configured to engage with the substrate and / or a carrier ring surrounding the substrate, lifting and rotating the substrate and / or carrier ring to the next station. The extensions may also be configured to rotate the substrate without rotating the indexer 410b. For illustrative purposes, the extensions may be spider forks in one embodiment and arms configured for horizontal movement used to interlock with the substrate and for rotation of the substrate relative to the extensions in other embodiments.

[0052] As shown, the conductive structure includes a shaft 420 electrically connected to the upper plate 102c. For example, the electrical connection can be achieved through line bearings that provide line connections, or through conductive (e.g., fluid, magnetic fluid, etc.) seals and bellows assemblies, etc. The conductive structure includes a connector 421 and a conductive interface 425. The connector 421 provides physical interlocking between the shaft 420 and the conductive interface 425. In particular, the conductive interface 425 is movably connected to the upper plate 102c through the movement of the shaft 420. For example, an actuator 467 may be connected to the shaft 420 coupled to the conductive interface 425. The actuator 467 may be configured to control the movement of the conductive interface 425 in the Z direction. In this way, the conductive interface 425 can move downward in the Z direction and make contact with the indexer 410b. In particular, contact may occur when the multi-station process chamber is undergoing a plasma process (e.g., depositing layers using plasma) to provide a symmetrical RF return path through the center of the chamber 400A. During plasma processing, each of the multiple extensions of the indexer 410b is stopped, and the spindle 410a is moved to a lower position during plasma processing. For example, the indexer and its extensions may be moved to a position below at least a portion of the base 140. That is, the indexer 410b and spindle 410a are positioned to reduce interference with the plasma processing of each substrate in the multi-station process chamber 400A.

[0053] In one embodiment, a contact interface (not shown) is positioned on the indexer 410b to facilitate electrical contact between the conductive interface 425 and the indexer. For example, the surfaces of the conductive interface 425 and the indexer 410b may not be perfectly smooth and planar, so the contact between the conductive interface and the indexer may not be ideal. The contact interface may be made of a material that is flexible and can conform to the surfaces of the conductive interface 425 and the indexer 410b in order to provide a better electrical connection.

[0054] As shown, the shaft 420 extends beyond the upper plate 102c of the upper portion 102a of the chamber and is coupled to the actuator 467. In another embodiment, the shaft is enclosed in a pocket in the upper plate 102c and further connected to the actuator through the upper plate 102c. For example, in either configuration, the movement of the shaft in the Z direction allows the conductive interface 425 to not interfere with the rotating mechanism 410 during substrate transfer. In particular, the pocket is configured to receive the conductive interface, or at least a portion of the conductive interface (e.g., the portion including the connector 421), when the spindle is moved to the upper position, so that the multiple extensions of the indexer 410b can engage with one or more substrates at a station for the transfer and feeding of substrates from station to station, and / or rotation of the substrates around the extensions.

[0055] In one embodiment, the conductive interface 425 includes one or more solid tubes or rods, etc., providing a direct conductive path between the ends of the conductive interface. For example, the conductive interface 425 may be one or more cylindrical tubes. In another embodiment, the conductive interface 425 is a spiral cylindrical tube. For example, the conductive interface 425 includes multiple horizontally oriented interstitial beams connected by multiple vertical links, providing a non-spiral conductive path between the upper plate 102c and the lower portion 102b of the multi-station process chamber 400A. The spiral cylindrical tube is fully illustrated in Figure 6.

[0056] The return path for the RF power is shown. In particular, the RF power is supplied to the base 140 of the base assembly (e.g., an electrostatic chuck) through one or more power sources. The RF power passes through the base 140 via path 490 toward a plasma confinement region located in part between the base 140 and the showerhead 150, where the reactive gas is supplied through an opening defined in the showerhead or electrode assembly (i.e., coming from the bottom or top portion of the chamber). The RF power generates a plasma of the reactive gas, for example, through a capacitively coupled plasma (CCP) discharge. The RF power from the plasma confinement region flows through a conductive path defined through the showerhead 150 and flows upward through the upper plate 102c. Rather than proceeding only to the side walls of the chamber 400A, the RF power flows to the side walls and conductive structures of the chamber 400A, more specifically through the shaft 420, connector 421, and conductive interface 425. Furthermore, the RF power flows through the rotating mechanism 410, and more specifically through the indexer 410b and spindle 410, finally reaching the lower portion 102b of the multi-station process chamber 400A.

[0057] Figure 4B is a perspective view of a rotating mechanism 410 showing a possible RF return path through an indexer according to one embodiment of the present disclosure. In particular, the indexer 410b may include an upper indexer portion and a lower indexer portion. The indexer may be in contact with the spindle 410a and / or the outer wall 490 of the channel 491 on which the spindle 410a moves in the Z direction. RF power can return to the lower portion 102b of the multi-station process chamber 400A via the outer wall 490 of the channel 491 and / or through the spindle 410a.

[0058] Figure 5A is a cross-sectional view of a multi-station processing chamber 500A according to one embodiment of the present disclosure, configured to include a central electrically conductive path in the chamber that enhances the symmetry of the RF return path for one or more stations, thereby reducing non-uniformity across the entire substrate. In particular, according to one embodiment of the present disclosure, the multi-station processing chamber 400A includes a conductive interface electrically coupled to the upper plate of the chamber and is configured to contact a rotating mechanism at the center of the chamber to provide a symmetrical RF return path for each station. The multi-station processing chamber 500A is similar to the multi-station processing chamber 400A of Figure 4A, except that the conductive interface 525 differs, and more specifically, has a larger footprint than the conductive interface 425 of Figure 4A, thereby providing a different RF return path other than through the rotating mechanism 410. Thus, between the two figures, components with similar reference numerals have the same features and functions, and the descriptions provided in relation to Figure 4A, and other figures, are equally applicable to the multi-station processing chamber 500A of Figure 5A.

[0059] In summary, the multi-station processing chamber 500A includes an upper portion 102a, which includes an upper plate 102c, and a bottom portion 102b, and is configured to surround the stations, each of which includes a base 140 of a base assembly. The upper portion 102a includes a shower head 150 aligned on the base 140 and electrically connected to the upper plate 102c. A centrally located rotating mechanism 410 includes a spindle 410a and an indexer 410b, and is configured to transport and / or rotate substrates between stations and to rotate the substrates around an extension of the indexer. The spindle 410a rotates around a central axis 470 and moves vertically along the central axis. The spindle is electrically connected to the bottom portion 102b of the chamber 500A (e.g., a conductive seal and bellows assembly, e.g., a seal and bellows assembly for conductive fluid or magnetic fluid (not shown)) and is moved controllably by an actuator 465. Therefore, the indexer 410b is configured to move in the Z direction as the spindle 410a moves, rotate with the rotation of the spindle around the central axis 470, move its extension horizontally to engage with the substrate for transfer between stations, and / or rotate the substrate around the end of the extension without rotating the indexer 410b.

[0060] As shown, the conductive structure includes a shaft 520 electrically connected to the upper plate 102c. For example, the electrical connection can be achieved through line bearings that provide line connections, or through conductive (fluid, magnetic fluid, etc.) seals and bellows assemblies, etc. The conductive structure includes a connector 521 and a conductive interface 525. The connector 521 provides physical interlocking between the shaft 520 and the conductive interface 525. In particular, the conductive interface 525 is movably connected to the upper plate 102c through the movement of the shaft 520. For example, an actuator 567 may be connected to the shaft 520 coupled to the conductive interface 525. The actuator 567 may be configured to control the movement of the conductive interface 525 in the Z direction.

[0061] In one embodiment, the conductive interface 525 has a lower end portion 526 that spans the diameter of the indexer 410b. That is, the lower end portion 526 can completely enclose at least a portion of the indexer 410b without a physical interface. For example, the conductive interface 525 can be extended downwards over the top surface of the indexer 410b to form an RF path with another conductive structure. That is, the conductive interface is configured to move downwards in the Z direction to make an RF connection with a conductive structure adjacent to the spindle 410a and indexer 410b, such as during plasma processing. For example, the conductive interface 525 can be moved via the movement of the shaft 520 to a position to make an RF connection with another conductive structure (e.g., a conductive plate, one or more conductive rods, etc.) electrically coupled to the bottom portion 102b. In particular, the RF connection may be made when the multi-station process chamber is undergoing a plasma process (e.g., depositing layers using plasma) to provide a symmetrical RF return path through the center of the chamber 400A. During plasma processing, each of the multiple extensions of the indexer 410b is stopped, and the spindle is moved to a lower position during plasma processing. For example, the indexer and the extension of indexer 410b may be moved to a position below at least a portion of the base 140. That is, the indexer 410b and spindle 410a are positioned to reduce interference with the plasma processing of each substrate in the multi-station process chamber 500A.

[0062] The return path for the RF power is shown. In particular, the RF power is supplied to the base 140 of the base assembly (e.g., an electrostatic chuck) through one or more power sources. The RF power passes through the base 140 via path 590 toward a plasma confinement region located in part between the base 140 and the showerhead 150, where the reactive gas is supplied through an opening defined in the showerhead or upper electrode assembly. The RF power generates a plasma of the reactive gas, for example, through a capacitively coupled plasma (CCP) discharge. The RF power from the plasma confinement region flows through a conductive path defined through the showerhead 150 and flows upward through the upper plate 102c. Rather than proceeding only to the side walls of the chamber 500A, the RF power flows to the side walls of the chamber 500A and the conductive structures, more specifically through the shaft 520, connector 521, and conductive interface 525. Furthermore, the RF power flows through another conductive structure (e.g., a conductive plate, one or more conductive rods, etc.) RF-connected to the conductive interface 525 (e.g., the lower end portion 526), ​​and finally reaches the lower portion 102b of the multi-station process chamber 500A.

[0063] Figure 5B is a diagram of a conductive structure (e.g., an RF liner) showing the contacts of the conductive interface 525 of Figure 5A, which provides a symmetric RF return path for each station, according to one embodiment of the present disclosure. In particular, Figure 5B shows a top view of the lower chamber portion or body 102b, which shows the positioning of the conductive structure 504 (e.g., formed as a conductive plate). For example, the conductive structure 504 is positioned on the inner wall and attached to the outer wall. The conductive structure 504 has a central opening and a process opening for each station. The central opening is configured to receive a rotation mechanism at the central location. The process opening has a diameter larger than the diameter of the carrier ring at each station, and a symmetrical gap is defined between the edge of each process opening defined by the conductive structure and the outer edge of the carrier ring.

[0064] For example, the conductive structure 504 includes a process opening having a diameter D1, in which a base 140 is positioned. In one embodiment, the base, which includes a carrier ring 200, has a diameter D2. Thus, a gap 506 is provided, defined by the difference between diameters D2 and D1, thereby defining a symmetrical separation between the base and the conductive structure 504. In addition, another gap 508 is defined between the inner wall of the chamber 102b and the outer edge of the conductive structure 504. This gap can be varied according to tolerances, and in some embodiments, it can be reduced to the point where the conductive structure 504 contacts the inner wall of the lower chamber body 102b.

[0065] Furthermore, contact points 501 where the conductive interface 525 contacts the conductive structure 504 are shown. For example, contact points 501 are shown by solid lines. The contour of the conductive interface 525 is shown by dotted circles.

[0066] Figure 5C is a perspective view of the conductive structure 504 of Figure 5B according to one embodiment of the present disclosure. In this example, the process opening is defined to have a diameter D1, as described above. The diameter D1 is greater than the diameter of the base 140. The central opening 504a is used to house the rotating mechanism 220. As described above, in the exemplary embodiment, the rotating mechanism 220 also includes a spider fork 226. In other embodiments, other lifting mechanisms may be used instead of the spider fork 226, and these may also be provided with the rotating mechanism 220. In various embodiments, the conductive structure 504 may be defined by one or more modules or components 404b, or it may be defined as a single unit without the dividing lines shown.

[0067] Figure 6 is a perspective view of a conductive interface 600 configured as a spiral flexible cylinder according to one embodiment of the present disclosure. In other embodiments, the conductive interface may be solid, including one or more solid tubes, rods, etc. As shown, the conductive interface 600 is a spiral cylindrical tube. For example, the conductive interface 425 includes a plurality of interstitial beams 620, each oriented horizontally and stacked vertically. In particular, the interstitial beams are connected by a plurality of vertical links 610 such that any two interstitial beams are connected via one or more vertical links.

[0068] In one embodiment, the conductive interface 600 is configured as a spiral flexible tube, and this structure provides physical compliance so that a reliable connection exists between the upper plate 102c and any contact points made up by the conductive structure (e.g., spindle, indexer, conductive plate, one or more conductive rods). That is, it is possible to apply some pressure between the ends of the conductive interface 600 (for example, by connecting the upper portion 102a and the lower portion 102b of the corresponding chamber), thereby ensuring a good connection between the upper plate 102c and any conductive structure to be mounted. For example, the conductive interface may exhibit mechanically compliant characteristics.

[0069] The conductive interface 600 shown in Figure 6 provides a non-spiral conductive path between the upper plate and bottom portion 102c of the corresponding multi-station process chamber when the conductive interface is in contact with an indexer or any other conductive structure. Because the RF return current path is not direct between the ends of the conductive interface 600, the conductive interface generates a low-toxicity magnetic field that is less likely to interfere with the plasma processing.

[0070] In one embodiment, the conductive interface 600 can pass through the indexer 410b and directly contact the spindle 410a. In another embodiment, the conductive interface 600 contacts the surface of the indexer 410b. In yet another embodiment, the conductive interface 600 contacts another conductive structure, such as a conductive plate or one or more conductive rods.

[0071] Figure 7 is a cross-sectional view of a multi-station processing chamber 700 according to one embodiment of the present disclosure, configured to include a central RF path within the chamber to enhance the symmetry of the RF return path for one or more stations, thereby reducing non-uniformity across the entire substrate. In particular, according to one embodiment of the present disclosure, the multi-station processing chamber 700 includes a conductive interface connected to a rotating mechanism at the center of the chamber, which is configured to contact the upper plate of the chamber and provide a symmetrical RF return path for each station. The portion of the multi-station processing chamber 700 is similar to that of the multi-station processing chamber 400A in Figure 4A. Thus, components with similar reference numerals between the two figures have the same features and functions, and the descriptions provided in relation to Figure 4A, as well as the other figures, are equally applicable to the multi-station processing chamber 700 in Figure 7.

[0072] In summary, the multi-station processing chamber 700 includes an upper section 102a, which includes an upper plate 102c, and a bottom section 102b, and is configured to surround the stations, each of which includes a base 140 of a base assembly. The upper section 102a includes a shower head 150 aligned on the base 140 and is electrically connected to the upper plate 102c. A centrally located rotating mechanism 410 includes a spindle 410a and an indexer 410b, and is configured to transport and / or rotate substrates between stations, and to rotate substrates around an extension of the indexer. The spindle 410a rotates around a central axis 470 and moves vertically along the central axis. The spindle is electrically connected to the bottom section 102b of the chamber 700 (e.g., using a conductive seal and bellows assembly, e.g., a conductive fluid, magnetic fluid, etc. (not shown)) and is moved controllably by an actuator 465. Therefore, the indexer 410b is configured to move in the Z direction as the spindle 410a moves, rotate with the rotation of the spindle around the central axis 470, move its extension horizontally to engage with the substrate for transfer between stations, and / or rotate the substrate around the end of the extension without rotating the indexer 410b.

[0073] As shown, the conductive interface 725 is connected to the indexer. Therefore, since the rotating mechanism 410 is electrically connected to the lower portion 102b of the chamber, the conductive interface 725 is also electrically connected to the lower portion of the chamber. As previously mentioned, the spindle 410a is configured to move upward in the Z direction using the actuator 465. For example, the spindle 410a may be moved to a higher position so that the conductive interface 725 forms an RF connection with the upper plate 102c, such as during plasma processing. In one embodiment, the conductive interface 725 makes a direct RF connection with the upper plate 102c. In another embodiment, the conductive interface 725 makes an RF connection with a receiving interface 720 that is electrically connected to the upper plate 102c. In this case, only movement of the spindle 410a in the Z direction is required to make the conductive interface 725 an RF connection with the upper plate 102c and / or the receiving interface 720 on the upper plate. Therefore, the indexer 410b and the spindle 410a connected to the indexer are configured to move upward in the Z direction to a higher position, such as during plasma processing, so that the conductive interface 725 makes an RF connection with the upper plate 102c and / or the receiving interface 720.

[0074] In particular, the RF connection may be made when the multi-station process chamber 700 is undergoing a plasma process (e.g., depositing layers using plasma) to provide a symmetrical RF return path through the center of the chamber 400A. During plasma processing, each of the multiple extensions of the indexer 410b is stopped when the spindle is moved to a higher position during plasma processing. For example, the indexer and the extension of indexer 410b may be moved to a position above at least a portion of the showerhead 150. That is, the indexer 410b and the spindle 410a are positioned to reduce interference with the plasma processing of each substrate in the multi-station process chamber 700.

[0075] The return path for RF power is shown. Specifically, RF power is supplied to the base 140 of the base assembly (e.g., an electrostatic chuck) through one or more power sources. The RF power passes through the base 140 via path 790 toward a plasma confinement region located in part between the base 140 and the showerhead 150, where reactive gas is supplied through an opening defined in the showerhead or upper electrode assembly. The RF power generates a plasma of reactive gas, for example, through a capacitively coupled plasma (CCP) discharge. The RF power from the plasma confinement region flows through a conductive path defined through the showerhead 150 and flows upward through the upper plate 102c. Rather than proceeding only through the side walls of chamber 500A, the RF power flows through the side walls of chamber 700 as well as through the center of the chamber, more specifically through the upper portion 102b and / or the acceptance interface 720 of the upper portion 102b. Furthermore, the RF power flows through the upper portion 102b and / or the acceptance interface 720 and the RF-connected conductive interface 725. Next, the RF power flows through the rotating mechanism 410, more specifically the indexer 410b and spindle 410a, and finally reaches the lower portion 102b of the multi-station process chamber 700.

[0076] Figure 8 is a cross-sectional view of a multi-station processing chamber 800 according to one embodiment of the present disclosure, configured to include a central conductive path in the chamber that enhances the symmetry of the RF return path for one or more stations, thereby reducing non-uniformity across the entire substrate. In particular, according to one embodiment of the present disclosure, the multi-station processing chamber 800 includes a conductive interface connected to a rotating mechanism, electrically coupled to the top of the chamber, and configured to contact a conductive structure at the center of the chamber to provide a symmetrical RF return path for each station. The portion of the multi-station processing chamber 800 is similar to that of the multi-station processing chamber 400A in Figure 4A. Thus, components with similar reference numerals between the two figures have the same features and functions, and the descriptions provided in relation to Figure 4A, as well as the other figures, are equally applicable to the multi-station processing chamber 800 in Figure 8.

[0077] As shown, the multi-station processing chamber 800 includes an upper portion 102a, which includes an upper plate 102c, and a bottom portion 102b. The multi-station processing chamber 800 is configured to surround a plurality of stations, each station including a base 140 (e.g., an electrostatic chuck) of a base assembly for supporting substrates for processing. For clarity and brevity, only one station is shown in the cross-sectional view. As previously mentioned, the upper portion 102a includes a shower head 150, which is positioned on and aligned with the base 140 of the station, and the shower head 150 is electrically connected to the upper plate 102c.

[0078] The rotating mechanism 810 includes a spindle 810 and an indexer 810b, the indexer 810b may be one of several indexing mechanisms (e.g., spider fork, arm, etc.). The spindle 810a is located in the center between several stations and is configured to rotate around a central axis 870. The rotating mechanism 810 operates within the upper plate 102c of the chamber, rather than being located in the lower portion 102b as shown in previous figures, including Figure 4A. Thus, the spindle 810a is electrically connected to the upper plate 102c (e.g., via a conductive seal and bellows assembly, e.g., a conductive fluid or magnetic fluid seal and bellows assembly (not shown)). An actuator 865 is coupled to the spindle 810a and configured to control the movement of the spindle. In particular, the spindle 810a may be rotated around the central axis 870 and / or moved in the Z direction. In one embodiment, the actuator 865 may be controlled by a control module 110 in Figure 1.

[0079] The rotating mechanism 810 also includes an indexer 810b connected to the spindle 810a, which can also be controlled by the actuator 865. The indexer 810b is configured to rotate together with the spindle 810a around the central axis 870. The indexer 810b is also configured to move in the Z direction as the spindle 810a moves. Although not shown, the indexer 810b includes several extensions, each of which is configured to work with the corresponding substrate for transfer between stations, as described above. For example, the indexer 810b and its extensions are configured to engage with the substrate and / or a carrier ring surrounding the substrate, lifting and rotating the substrate and / or carrier ring to the next station. Alternatively, the extensions may be configured to rotate the substrate without rotating the indexer 810b. For illustrative purposes, the extension may be a spider fork in one embodiment, and an arm configured for horizontal movement used in conjunction with the substrate, and for rotation of the substrate relative to the extension in other embodiments.

[0080] As shown, the conductive structure includes a conductive interface 825 electrically connected to the rotating mechanism 410, more specifically to the indexer 410b. The conductive interface 825 is also conductive. Since the rotating mechanism 810 is electrically connected to the upper plate 102c, the conductive interface is also electrically connected to the upper plate. The conductive structure may also include a connection interface 830. In addition, a receiving interface 820 (or another conductive structure) is electrically connected to the bottom portion 102b of the chamber 800.

[0081] The spindle 410a is configured to move downward in the Z direction using an actuator 865. For example, the spindle 810a may be moved to a lower position so that the conductive interface 825 or connection interface 830 makes an RF connection with the receiving interface 820, which is electrically connected to the bottom portion 102b, such as during processing. In one embodiment, the conductive interface 825 or connection interface 830 makes a direct RF connection with the bottom portion 102b of the chamber. In this case, only movement of the spindle 810a in the Z direction is required to bring the conductive interface 825 into RF contact (i.e., make an RF connection) with the receiving interface 820 and / or the lower portion 102b. Therefore, the indexer 810b and the spindle 810a (connected to the indexer 810b) are configured to move downward in the Z direction to a lower position so that the conductive interface 825 or connection interface 830 makes an RF connection with the receiving interface 820 or the lower portion 102b during plasma processing.

[0082] In particular, the RF connection may be made when the multi-station process chamber 800 is undergoing a plasma process (e.g., depositing layers using plasma) to provide a symmetrical RF return path through the center of the chamber 800. During plasma processing, each of the multiple extensions of the indexer 810b is stopped when the spindle is moved to a lower position during plasma processing. For example, the indexer and the extension of indexer 810b may be moved to a position below at least a portion of the base 140. That is, the indexer 810b and the spindle 810a are positioned to reduce interference with the plasma processing of each substrate in the multi-station process chamber 800.

[0083] The return path for RF power is shown. In particular, RF power is supplied to the base 140 of the base assembly (e.g., an electrostatic chuck) through one or more power sources. The RF power passes through the base 140 via path 890 toward a plasma confinement region located in part between the base 140 and the showerhead 150, where reactive gas is supplied through an opening defined in the showerhead or upper electrode assembly. The RF power generates a plasma of reactive gas, for example, through a capacitively coupled plasma (CCP) discharge. The RF power from the plasma confinement region flows through a conductive path defined through the showerhead 150 and flows upward through the upper plate 102c. Rather than proceeding only to the side walls of chamber 500A, the RF power flows toward the side walls of chamber 800 as well as the center of the chamber, more specifically through the rotating mechanism 810, and more specifically through the spindle 810a and indexer 810b. Furthermore, the RF power flows through conductive structures, more specifically through the conductive interface 825 and / or connection interface 830. Furthermore, RF power flows through the receiving interface 820 and / or lower section 102b, which are in RF contact (i.e., through RF connections) with the conductive interface 825 and / or connecting interface 830, and finally reaches the lower section 102b of the multi-station process chamber 800.

[0084] Figure 9 is a cross-sectional view of a multi-station processing chamber 900 according to one embodiment of the present disclosure, configured to include a central RF return path of the chamber to enhance the symmetry of the RF return path for one or more stations, thereby reducing non-uniformity across the entire substrate. In particular, according to one embodiment of the present disclosure, the multi-station processing chamber 900 includes a conductive interface configured to provide a continuous electrical connection between the upper plate of the chamber and a rotating mechanism at the center of the chamber, and to provide a symmetric RF return path to ground for each station. The multi-station processing chamber 900 is similar to the multi-station processing chamber 400A of Figure 4A, except for at least additional configurations of conductive (e.g., fluid, magnetic fluid, etc.) seals and bellows assemblies that provide a continuous electrical connection. Thus, between the two figures, components with similar reference numbering have the same features and functions, and the descriptions provided in relation to Figure 4A, as well as the other figures, are equally applicable to the multi-station processing chamber 900 of Figure 9.

[0085] In summary, the multi-station processing chamber 500A includes an upper portion 102a including an upper plate 102c and a bottom portion 102b, and is configured to surround the stations, each of which includes a base 140 of a base assembly. The upper portion 102a includes a shower head 150 aligned on the base 140 and is electrically connected to the upper plate 102c. A centrally located rotating mechanism 410 includes a spindle 410a and an indexer 410b, and is configured to transport and / or rotate substrates between stations, and to rotate the substrates around an extension of the indexer. The spindle 410a rotates around a central axis 470 and moves vertically along the central axis. The spindle is electrically connected to the bottom portion 102b of the chamber 500A (e.g., a conductive seal and bellows assembly, e.g., a conductive fluid, magnetic fluid, etc. (not shown)) and is moved controllably by an actuator 465. Therefore, the indexer 410b is configured to move in the Z direction as the spindle 410a moves, rotate with the rotation of the spindle around the central axis 470, move its extension horizontally to engage with the substrate for transfer between stations, and / or rotate the substrate around the end of the extension without rotating the indexer 410b.

[0086] As shown, the conductive structure includes a shaft 920 electrically connected to the upper plate 102c, the shaft moving through a travel space within the upper plate 102c. For example, the electrical connection can be achieved through a magnetic fluid seal and bellows assembly 950 connected to the upper plate 102c around an opening in the travel space. In this way, the electrical connection between the conductive structures (i.e., the shaft 920) is maintained by any movement of the shaft 920. In particular, the ends of the conductive interface engage with the conductive (e.g., fluid, magnetic fluid, etc.) seal and bellows assembly 950 through bearings, etc., to make continuous contact with the upper plate 102c when the spindle 410a is stopped or moving in the Z direction. The conductive structure includes a connector 921 and a conductive interface 925. The connector 921 provides physical interlocking between the shaft 920 and the conductive interface 925. In particular, as described, the conductive interface 925 and the shaft 920 are movably connected to the upper plate 102c through the movement of the spindle 410a. In particular, the conductive interface 925 is further connected to the rotary mechanism 410, and more specifically to the indexer 410b of the rotary mechanism. Thus, the movement of the spindle 410a of the rotary mechanism is translated into movement of the conductive interface 925 and shaft 920 in the Z direction.

[0087] In this way, continuous electrical contact exists between the conductive structure (e.g., conductive interface 925) and the rotating mechanism 410 (i.e., through the indexer 410b), and the rotating mechanism is always electrically connected to the lower portion 102b during plasma processing. Thus, the continuous contact between the conductive structure and the rotating mechanism 410 provides a symmetrical RF return path passing through the center of the chamber 900. During plasma processing, each of the multiple extensions of the indexer 410b is stopped, and the spindle is moved to a lower position during plasma processing. For example, the indexer and the extension of indexer 410b may be moved to a position below at least a portion of the base 140. In another embodiment, due to the presence of continuous connection, during plasma processing, each of the extensions of indexer 410b is stopped when the spindle is moved to a higher position during plasma processing. For example, the indexer and the extension of indexer 410b may be moved to a position above at least a portion of the showerhead 150. In other words, in each embodiment, the indexer 410b and spindle 410a are positioned to reduce interference with the plasma processing of each substrate in the multi-station process chamber 900.

[0088] The return path for the RF power is shown. In particular, the RF power is supplied to the base 140 of the base assembly (e.g., an electrostatic chuck) through one or more power sources. The RF power passes through the base 140 via path 990 toward a plasma confinement region located in part between the base 140 and the showerhead 150, where the reactive gas is supplied through an opening defined in the showerhead or upper electrode assembly. The RF power generates a plasma of the reactive gas, for example, through a capacitively coupled plasma (CCP) discharge. The RF power from the plasma confinement region flows through a conductive path defined through the showerhead 150 and flows upward through the upper plate 102c. Rather than proceeding only to the side walls of the chamber 900, the RF power flows to the side walls of the chamber 900 as well as to the conductive structures, more specifically through the shaft 920, the connector 921, and the conductive interface 925. Furthermore, the RF power flows through the rotating mechanism 410 (i.e., indexer 410b) which is in contact with or RF-connected to the conductive interface 925, and finally through the lower portion 102b of the multi-station process chamber 900 to ground.

[0089] Figures 10A to 10F show a drop-in passive or active device configured to facilitate the RF return path between the upper and lower portions of a multi-station processing chamber, according to one embodiment of the present disclosure. In particular, embodiments of the present disclosure describe a drop-in spindle post or similar component that is self-operating or passive and does not require input or operation from the multi-station processing chamber. The drop-in spindle post or similar component can be a standalone item that can be added to the multi-station processing chamber after production.

[0090] Figure 10A shows a device 1000A according to one embodiment of the present disclosure, configured to facilitate the RF return path between the upper and lower portions of a multi-station processing chamber. In one embodiment, the drop-in device is pre-assembled and then mounted on the spindle of the multi-station processing chamber, after which the chamber can be closed. The device may be passive or self-operating, as long as it is configured to provide a conductive RF return path, as described above in relation to Figures 1 to 9. That is, device 1000A can be modified to be mounted on the systems and devices of Figures 4A, 5A, 7, 8, and 9 described above. Furthermore, device 1000A does not have to be mounted at the center of the multi-station processing chamber (e.g., the center of the spindle and indexer assembly). For example, device 1000A may be off-center, as long as an RF return path exhibiting improved symmetry with respect to the stations is provided (i.e., an RF return path is provided through the side walls and center of the multi-station processing chamber around each of the stations).

[0091] The apparatus 1000A includes a conductive upper post assembly 1041. In particular, the upper post assembly includes an upper post 1040 electrically connected to the upper portion 1045 of the upper post assembly. In one embodiment, the upper post 1040 is cylindrical. The upper post assembly 1041 includes a bottom portion 1048 including a lip 1049.

[0092] The apparatus 1000A includes a conductive lower post assembly 1051 movably connected to an upper post assembly 1041. The upper post assembly 1041 and the lower post assembly 1051 are configured to provide an RF return path between the upper plate and the bottom portion 102b of the multi-station processing chamber. In particular, the lower post assembly includes a lower post 1050 electrically connected to the bottom portion 1055 of the lower post assembly. In one embodiment, the lower post 1050 is cylindrical. In addition, the lower post assembly includes a base 1057 connected to the lower post 150. The lower post assembly 1051 includes an upper portion 1058 with a lip 1059.

[0093] The apparatus 1000A also includes an optional spring assembly 1005 electrically connected to the upper and lower post assemblies, the spring assembly configured to move the lower post assembly 1051 relative to the upper post assembly 1041. In particular, the spring assembly includes a spring base 1010 electrically connected to the lower post assembly 1051. A spring piston tube 1015 is electrically in contact with the upper post assembly 1041, and the spring piston tube is movably connected to the spring base 1010. A spring 1011 is in contact with and electrically in contact with the spring base 1010 and the upper post assembly 1041, and is configured to move within the spring piston tube 1015. For example, the spring 1011 is configured to press the upper portion 1045 of the upper post assembly 1041.

[0094] Furthermore, the device 1000A includes an on-axis thrust bearing 1020 electrically connected to the spring base 1010 and the base 1057 of the lower post assembly 1051. In particular, the on-axis thrust bearing 1020 is configured to allow the rotation of the lower post assembly 1051 without rotating the upper post assembly 1041. That is, when the lower post assembly 1051 rotates with the corresponding rotating mechanism (e.g., spindle and indexer assembly), the thrust bearing 1020 is configured so that the spring base 1010 does not rotate with the rotation of the lower post assembly 1051 and the corresponding rotating mechanism.

[0095] The apparatus 1000A includes one or more optional RF gaskets 1030, each configured to provide a corresponding RF connection between two components. In particular, RF gasket 1030a is positioned on the upper post assembly 1041 and configured to provide an RF connection with the upper plate of the multi-station processing chamber. For example, RF gasket 1030a is positioned on the upper portion 1045 of the upper post assembly. In addition, RF gasket 1030b is configured to provide an RF connection between the upper post assembly 1041 and the lower post assembly 1051. For example, RF gasket 1030b is positioned between a lip 1049 positioned on the bottom portion 1048 of the upper post assembly 1041 and a lip 1059 positioned on the upper portion 1058 of the lower post assembly 1051. The interaction between the RF gasket 1030b, the upper post assembly 1041, and the lower post assembly 1051 significantly improves compliance with the opening and closing of the chamber, ensuring that RF contact is maintained throughout the upper portion of the chamber, the device 1000A, and the bottom portion of the chamber. Furthermore, the RF gasket 1030c is positioned on the lower post assembly 1051 and configured to provide an RF connection between the lower post assembly 1051 and the bottom portion 102b of the multi-station processing chamber.

[0096] Figure 10B shows the bottom 1055 of the lower post assembly 1051. In particular, the bottom 1055 includes a gap 1061. The opening in the gap 1061 allows the extension to move through the gap, and the extension 1060 is configured within a rotating mechanism 410 (e.g., an indexer) for substrate feeding and / or rotation.

[0097] Figure 10C shows the interaction between the apparatus 1000A of Figure 10A and the upper plate and bottom portion of the multi-station processing chamber. For example, the apparatus 1000A is positioned above the rotating mechanism 410 and below the receiving interface 1080. In one embodiment, the receiving interface 1080 is electrically connected to the upper plate 102c of the multi-station processing chamber. In another embodiment, the apparatus is positioned below the upper plate 102c without using the receiving interface 1080. The spring assembly is configured to keep the apparatus 1000A positioned between the upper and bottom portions of the multi-station processing chamber. That is, regardless of the position of the spindle 410a, the spring 1011 is configured to push the upper portion 1045 of the upper post assembly 1041 toward the receiving interface 1080, more specifically, to make a continuous RF connection between the receiving interface 1080 and the upper post assembly 1041.

[0098] As shown, the lower post assembly is configured to surround the rotating mechanism 410, which includes the spindle 410 and the indexer 410b. More specifically, the lower post assembly is configured to surround the indexer 410b connected to the spindle 410a. The spindle 410a is located in the center between several stations and is configured to rotate around a central axis. The spindle 410a is electrically connected to the bottom portion 102b (e.g., a magnetic fluid seal and bellows assembly (not shown)) and may be actuated by the aforementioned actuator so that the spindle 410a can be rotated and / or moved in the Z direction. That is, the spindle 410a can move within the advance space 1070 of the bottom portion 102b of the chamber. Also, the base 1057 of the lower post assembly 1051 is configured to contact the rotating mechanism 410, and more specifically to contact the indexer 410b.

[0099] More specifically, when the spindle 410a connected to the indexer 410b is in the lower position (for example, during plasma processing), the bottom 1055 of the lower post assembly 1051 is RF-connected to the bottom portion 102b of the multi-station processing chamber via the RF gasket 1030c. In addition, the lip 1049 positioned on the bottom portion 1048 of the upper post assembly 1041 is RF-connected to the lip 1059 positioned on the upper portion 1058 of the lower post assembly 1051 via the RF gasket 1030b. As previously mentioned, the spring 1011 is configured to provide a continuous RF connection between the receiving interface 1080 and the upper post assembly 1041. As shown, the spring 1011 forces contact between the receiving interface 1080 and the upper portion 1045 of the upper post assembly 1041, forces contact between the lips 1059 and 1049, and forces contact between the bottom 1055 and bottom portion 102b of the multi-station processing chamber.

[0100] Figure 10D is a figure showing the interaction between the apparatus 1000A of Figure 10A and the upper plate and bottom portion of the multi-station processing chamber, as previously mentioned in relation to Figure 10C. As previously mentioned, the spring assembly is configured to keep the apparatus 1000A positioned between the upper and bottom portions of the multi-station processing chamber. That is, regardless of the position of the spindle 410a, the spring 1011 is configured to push the upper portion 1045 of the upper post assembly 1041 toward the acceptance interface 1080, or more specifically, to make a continuous RF connection between the acceptance interface 1080 and the upper post assembly 1041. Figure 10D is similar to Figure 10C except that the position of the spindle 410a is different, and the descriptions of the components referenced in Figure 10C are applicable to the components similarly referenced in Figure 10D.

[0101] More specifically, when the spindle 410a connected to the indexer 410b is in the upper position (e.g., during substrate transfer and / or rotation), the bottom 1055 of the lower post assembly 1051 is separated from the bottom portion 102B of the multi-station processing chamber. That is, there is no RF connection between the bottom 1055 and the bottom portion 102B. In addition, the lip 1049 positioned on the bottom portion 1048 of the upper post assembly 1041 is separated from the lip 1059 positioned on the upper portion 1058 of the lower post assembly 1051. That is, there is no RF connection between the lip 1049 and the lip 1059, and therefore there is no RF connection between the upper post assembly 1041 and the lower post assembly 1051. As described above, the spring 1011 is configured to make a continuous RF connection between the receiving interface 1080 and the upper post assembly 1041, thereby forcing contact between the receiving interface and the upper portion 1045 of the upper post assembly 1041. However, because the spindle 410a is in the upper position, the spring 1011 is compressed, releasing contact between the lips 1049 and 1059, and also releasing contact between the bottom portion 1055 of the lower post assembly 1051 and the bottom portion 102b of the multi-station processing chamber.

[0102] Figure 10E is Figure 1000E showing the interaction between the apparatus 1001E and the upper plate and / or acceptance interface 1080 and bottom portion 102b of a multi-station processing chamber according to one embodiment of the present disclosure. For example, the apparatus 1001E is positioned above the rotating mechanism 410 and below the acceptance interface 1080. In one embodiment, the acceptance interface 1080 is electrically connected to the upper plate 102c of the multi-station processing chamber. In another embodiment, the apparatus is positioned below the upper plate 102c without using the acceptance interface 1080.

[0103] Apparatus 1001E is configured similarly to apparatus 1000A in Figure 10A, except that the bottom portion 1055 is absent. In particular, apparatus 1001E is configured to facilitate the RF return path between the upper and lower portions of the multi-station processing chamber. In one embodiment, apparatus 1001E may be configured for drop-in assembly or to work in conjunction with the multi-station processing chamber, and may be pre-assembled and then mounted on the spindle 410b, after which the chamber can be closed. Apparatus 1001E may be passive or self-operating, as long as it is configured to provide a conductive RF return path, as described above in relation to Figures 1 to 9. That is, apparatus 1001E can be modified and mounted on the systems and apparatus of Figures 4A, 5a, and 7 to 9. Furthermore, the device 1001E may be mounted at the center of the multi-station processing chamber (e.g., the center of the spindle and indexer assembly) or off-center, as long as an RF return path exhibiting improved symmetry with respect to the station is provided (i.e., an RF return path passing through the side walls of the multi-station processing chamber and toward the center).

[0104] As shown, the apparatus 1001E includes a conductive upper post assembly 1041 and an upper post 1040 electrically connected to the upper portion 1045. The upper post assembly 1041 includes a bottom portion 1048 including a lip 1049. The apparatus 1001E also includes a conductive lower post assembly 1051 movably connected to the upper post assembly 1041. The lower post assembly 1051 includes a lower post 1050 connected to the base 1057. The lower post assembly 1051 includes an upper position 1058 including a lip 1059.

[0105] The upper post assembly 1041 and the lower post assembly 1051 are configured to provide an RF return path between the upper plate and the bottom portion 102b of the multi-station processing chamber. In particular, the base 1057 of the lower post assembly 1051 is firmly attached to and electrically connected to the indexer 410b of the rotating mechanism 410. In addition, the upper portion 1045 is firmly attached to and electrically connected to the receiving interface 1080 and / or directly attached to the upper plate of the multi-station processing chamber. Thus, the device 1001E is positioned between the upper and lower portions of the multi-station processing chamber regardless of the position of the spindle 410a. The device 1001E is configured to provide a continuous RF return path (i.e., a continuous RF connection) between the upper and lower portions of the multi-station processing chamber regardless of the position of the rotating mechanism 410 (i.e., the RF return path is maintained when the spindle 410a moves vertically up and down). For example, the spindle 410a may be electrically connected to the bottom portion 102b (e.g., a magnetic fluid seal and bellows assembly (not shown)) and actuated by the aforementioned actuator, thereby allowing the spindle 410a to rotate and / or move in the Z direction so that it can move within the travel space 1070 of the bottom portion 102b.

[0106] Figure 10F is Figure 1000F showing the interaction between the apparatus 1001F and the upper plate and / or acceptance interface 1080 and bottom portion 102b of the multi-station processing chamber according to one embodiment of the present disclosure. For example, the apparatus 1001F is positioned above the rotating mechanism 410 and below the acceptance interface 1080. In one embodiment, the acceptance interface 1080 is electrically connected to the upper plate 102c of the multi-station processing chamber. In another embodiment, the apparatus is positioned below the upper plate 102c without using the acceptance interface 1080.

[0107] Device 1001F is configured similarly to device 1001E in Figure 10E, except that it has a spring 1011 used to make electrical contact between device 1001F and the upper and lower portions of the multi-station processing chamber. In particular, device 1001E is configured to facilitate the RF return path between the upper and lower portions. In particular, device 1001F may be configured for drop-in assembly or in conjunction with the multi-station processing chamber, as described above. Device 1001F may be passive or self-operating and may be configured to provide a conductive RF return path. Thus, with modifications, device 1001F can be mounted on the systems and apparatus in Figures 4A, 5a, and 7-9. Furthermore, the device 1001F may be mounted at the center of the multi-station processing chamber (e.g., the center of the spindle and indexer assembly) or off-center, as long as an RF return path exhibiting improved symmetry with respect to the station is provided (i.e., an RF return path passing through the side walls of the multi-station processing chamber and toward the center).

[0108] In summary, the device 1001F includes a conductive upper post assembly 1041 and a lower post assembly 1051. The lower post assembly 1051 is movably connected to the upper post assembly 1041, as described above.

[0109] The upper post assembly 1041 and the lower post assembly 1051 are configured to provide an RF return path between the upper plate and the bottom portion 102b of the multi-station processing chamber. In particular, the device 1001F includes a spring 1011 connected to a base 1057, the base 1057 is connected to the lower post 1050 of the lower post assembly 1051. The spring 1011 is also connected to the upper portion 1045 of the upper post assembly 1041, which is connected to the upper post 1040. The spring 1011 is configured to press the upper portion 1045 of the upper post assembly 1041 and the base 1057 of the lower post assembly 1051. That is, the spring 1011 forces contact between the upper portion 1045 and the receiving interface 1080 and forces contact between the base 1057 and the indexer 410b of the rotating mechanism 410. Therefore, the spring 1011 is configured to provide a continuous RF connection between the upper and lower portions of the multi-station processing chamber, regardless of the positioning of the spindle 410a (i.e., lower, upper, or intermediate position). Specifically, the spring 1011 and the device 1001F are configured to form an RF return path via the receiving interface 1080, the upper post assembly 1041, the lower post assembly 1051, and the rotating mechanism 410 (e.g., the indexer 410b).

[0110] Furthermore, the device 1001F is positioned between the upper and lower portions of the multi-station processing chamber, regardless of the position of the spindle 410a. As shown, when the spindle 410a is in the lower position, the spring 1011 forces contact between the receiving interface 1080 and the upper portion 1045 of the upper post assembly 1041, and also forces contact between the lips 1059 and 1049, and also forces contact between the base 1057 of the lower post assembly 1051 and the bottom portion 102b of the multi-station processing chamber. In one embodiment, the upper portion 1045 is not rigidly attached to the receiving interface 1080, and the base 1057 is not rigidly attached to the rotating mechanism 410 (e.g., the indexer 410b). In another embodiment, the upper portion 1045 is rigidly attached to the receiving interface 1080, or the base 1057 is rigidly attached to the rotating mechanism 410.

[0111] Figure 11 shows a control module 1100 for controlling the system described above. For example, the control module 1100 may include a processor, memory, and one or more interfaces. The control module 1100 may be used to control devices in the system based in part on sensed values. As just one example, the control module 1100 may control one or more of the valve 1102, filter heater 1104, pump 1106, and other devices 1108 based on sensed values ​​and other control parameters. As just one example, the control module 1100 receives sensed values ​​from a pressure manometer 1110, a flow meter 1112, a temperature sensor 1114, and / or other sensors 1116. The control module 1100 can also be used to control process conditions during precursor feeding and film deposition. The control module 1100 typically includes one or more memory devices and one or more processors. In one embodiment, the control module 1100 may include the control module 110 in Figure 1.

[0112] The control module 1100 can control the activity of the precursor feeding system and the deposition apparatus. The control module 1100 executes a computer program that includes a set of instructions for controlling process timing, feeding system temperature, pressure difference across filters, valve position, gas mixing, chamber pressure, chamber temperature, substrate temperature, RF power level, substrate chuck or pedestal position, purge gas feeding, and other parameters of a particular process. The control module 1100 can also monitor the pressure difference and automatically switch the feeding of the vapor precursor from one or more paths to one or more other paths. In some embodiments, other computer programs stored in a memory device associated with the control module 1100 can be used.

[0113] Typically, a user interface is associated with the control module 1100. The user interface may include a display 1118 (e.g., a display screen and / or graphical software display of the device and / or process conditions) and user input devices 1120 such as a pointing device, keyboard, touchscreen, or microphone.

[0114] Computer programs for controlling the feeding, deposition, and other processes of precursors in a process sequence can be written in any conventional computer-readable programming language (e.g., assembly language, C, C++, Pascal, Fortran, etc.). The compiled object code or script is executed by the processor to perform the tasks identified by the program.

[0115] The control module parameters relate to process conditions such as, for example, the filter pressure difference, process gas composition and flow rate, purge gas flow rate, plasma conditions such as temperature, pressure, RF power level and low-frequency RF frequency, cooling gas pressure, and chamber wall temperature.

[0116] System software can be designed or configured in many different ways. For example, various chamber component subroutines or control objects may be written to control the operation of chamber components necessary to perform the process of the present invention, including the supply of purge gas. Examples of programs or sections of programs for this purpose include substrate positioning code, process gas control code, purge gas control code, pressure control code, heater control code, and plasma control code.

[0117] The substrate positioning program may include program code for controlling chamber components used to load the substrate onto a pedestal or chuck and to control the distance between the substrate and other parts of the chamber, such as the gas inlet and / or target. The process gas control program may include code for controlling the gas composition and flow rate to stabilize the pressure in the chamber, and optionally, code for flowing gas into the chamber before deposition. The purge gas control program may include code for controlling the supply of purge gas. The filter monitoring program may include code for comparing the measured difference with a predetermined value and / or for switching paths. The pressure control program may include code for controlling the pressure in the chamber, for example, by adjusting the throttle valve of the chamber's exhaust system. The heater control program may include code for controlling the current to the heating unit for heating components of the precursor supply system, the substrate, and / or other parts of the system. Alternatively, the heater control program may control the supply of a heat transfer gas (such as helium) to the substrate chuck.

[0118] Examples of sensors that can be monitored during deposition include, but are not limited to, a mass flow control module, pressure sensors such as a pressure manometer 1110, thermocouples located in the feeding system, pedestal, or chuck, and a state sensor 1120. Appropriately programmed feedback and control algorithms can be used in conjunction with data from these sensors to maintain desired process conditions. The above describes the implementation of embodiments of the present disclosure in single or multi-chamber semiconductor processing tools.

[0119] In some embodiments, the controller is part of a system, and such a system may be part of the examples described above. Such a system may comprise semiconductor processing equipment including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as a substrate pedestal, gas flow system, etc.). These systems may be integrated with electronic equipment for controlling system operation before, during, and after processing of semiconductor wafers or substrates. Such electronic equipment may be referred to as a “controller” and may control various components or sub-components of one or more systems. Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein. Such processes include supplying processing gases, supplying purge gases, temperature setting (e.g., heating and / or cooling), pressure setting, vacuum setting, power setting, radio frequency (RF) generator setting, RF matching circuit setting, frequency setting, flow rate setting, fluid supply setting, position and operation setting, loading and unloading of substrates to and from tools and other transfer tools connected to or interlocked with a particular system, and / or loading and unloading of substrates to and from a load lock.

[0120] In a broad sense, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors, i.e., microcontrollers that execute program instructions (e.g., software). Program instructions are instructions communicated to the controller in the form of various individual settings (or program files) that may define operating parameters for performing a particular process on or for a semiconductor substrate or for a system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to realize one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0121] In some embodiments, the controller may be part of a computer integrated with or coupled to the system, or otherwise networked to the system, or coupled to such a computer, or a combination thereof. For example, the controller may be in the “cloud,” or all or part of the fab host computer system. This enables remote access to the board processing. The computer may enable remote access to the system to monitor the current progress of fabrication operations, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, change parameters of the current process, set processing steps following the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network. Such a network may include a local network or the internet.

[0122] The remote computer may include a user interface that enables the entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to work with or control. Thus, as described above, the controller may be distributed, for example, by comprising one or more separate controllers that are networked together and cooperate toward a common purpose (such as the processes and controls described herein). An example of a distributed controller for such a purpose would be one or more integrated circuits on a chamber that communicate with one or more integrated circuits that are remotely located (e.g., at the platform level or as part of a remote computer) and combined to control the processes in the chamber.

[0123] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, plasma-enhanced chemical vapor deposition (PECVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, tracking chambers or modules, and any other semiconductor processing systems that may be used in connection with or for the fabrication and / or manufacture of semiconductor wafers.

[0124] As described above, depending on one or more process steps performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used for material handling to load and unload wafer containers to and from tool locations and / or load ports within the semiconductor manufacturing plant.

[0125] The foregoing description of embodiments is provided for illustrative and explanatory purposes only. It is not intended to be exhaustive or to limit the disclosure. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment and are interchangeable and can be used in selected embodiments, even if not specifically illustrated or described, where applicable. Furthermore, these may be modified in many ways. Such modifications should not be considered deviations from the disclosure, and all such modifications are intended to be within the scope of the disclosure.

[0126] While the embodiments described above have been described in some detail for clearer understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. Therefore, these embodiments should be considered illustrative rather than restrictive, and the embodiments should not be limited to the details described herein, but may be modified within the scope of the claims and equivalents. This disclosure may be implemented in the following forms: [Form 1] It is a device, A multi-station processing chamber including an upper plate and a bottom portion, wherein the multi-station processing chamber is configured to surround a plurality of stations, each including a base assembly for supporting a substrate for processing, A spindle located in the center between the plurality of stations and configured to rotate around a central axis, wherein the spindle includes a spindle electrically connected to the bottom portion, A first actuator coupled to the spindle and configured to control the movement of the spindle in the Z direction, An indexer connected to the spindle and configured to rotate with the spindle, the indexer including a plurality of extensions, each configured to interlock with a corresponding substrate for transfer between stations, A conductive interface movably connected to the upper plate, A second actuator coupled to the conductive interface and configured to control the movement of the conductive interface in the Z direction, Equipped with, The conductive interface is configured to move downward in the Z direction and contact the indexer when each of the plurality of extensions is stopped and the spindle is moved to a lower position during plasma processing. Device. [Form 2] The apparatus described in Embodiment 1, The conductive interface comprises one or more solid cylindrical tubes in the apparatus. [Form 3] The apparatus described in Embodiment 1, The conductive interface comprises a spiral cylindrical tube containing a plurality of horizontally oriented interlattice beams connected by a plurality of vertical links. [Form 4] The apparatus described in Embodiment 3, The conductive interface provides a non-spiral conductive path between the upper plate and the bottom portion when the conductive interface is in contact with the indexer. [Form 5] The apparatus described in Embodiment 1, The multi-station processing chamber includes four stations, Device. [Form 6] The apparatus described in Embodiment 1, Pockets in the upper plate are configured to accept the conductive interface when the spindle is moved to an upper position, so that the plurality of extensions of the indexer can engage with one or more substrates at the plurality of stations. A device that further enhances this feature. [Form 7] The apparatus described in Embodiment 1, A contact interface positioned on the indexer, facilitating the RF return path between the conductive interface and the indexer. Furthermore, The aforementioned contact interface is flexible. Device. [Form 8] The apparatus described in Embodiment 1, The RF return path to the bottom portion is generated through the conductive interface, the indexer, and the spindle. Device. [Form 9] The apparatus described in Embodiment 1, The conductive interface is configured to move downward in the Z direction and in contact with the outer wall of the channel in which the spindle moves in the Z direction. Device. [Form 10] The apparatus described in Embodiment 1, The aforementioned indexer is, The upper indexer section, Lower indexer section and A device equipped with the following features. [Form 11] The apparatus described in Embodiment 1, A device in which each of the plurality of extensions is configured to rotate the corresponding substrate. [Form 12] It is a device, A multi-station processing chamber including an upper plate and a bottom portion, wherein the multi-station processing chamber is configured to surround a plurality of stations, each including a base assembly for supporting a substrate for processing, A spindle located in the center between the aforementioned multiple stations and configured to rotate around a central axis, A first actuator coupled to the spindle and configured to control the movement of the spindle in the Z direction, An indexer connected to the spindle and configured to rotate together with the spindle about the central axis, the indexer including a plurality of extensions, each configured to interlock with a corresponding substrate for transfer between stations, A conductive interface movably connected to the upper plate, A second actuator coupled to the conductive interface and configured to control the movement of the conductive interface in the Z direction, Equipped with, The conductive interface has a lower end portion that spans the diameter of the indexer, The conductive interface is configured to move downward in the Z direction and contact the conductive structure adjacent to the spindle and the indexer when each of the plurality of extensions is stopped and the spindle is moved to a lower position during plasma processing. The conductive structure is electrically coupled to the bottom portion. Device. [Form 13] The apparatus described in Embodiment 12, The apparatus wherein the conductive structure is an RF liner configured to surround the multiple bases of the multiple stations. [Form 14] The apparatus described in Embodiment 12, The apparatus wherein the conductive structure is one or more conductive rods. [Form 15] The apparatus described in Embodiment 12, The conductive interface comprises one or more solid cylindrical tubes in the apparatus. [Form 16] The apparatus described in Embodiment 12, The conductive interface comprises a spiral cylindrical tube containing a plurality of horizontally oriented interlattice beams connected by a plurality of vertical links, The conductive interface provides a non-spiral conductive path between the upper plate and the bottom portion when the conductive interface is in contact with the indexer. Device. [Form 17] The apparatus described in Embodiment 12, The multi-station processing chamber includes four stations, Device. [Form 18] The apparatus described in Embodiment 12, Pockets in the upper plate are configured to accept the conductive interface when the spindle is moved to an upper position, so that the plurality of extensions of the indexer can engage with one or more substrates at the plurality of stations. A device that further enhances this feature. [Form 19] The apparatus described in Embodiment 12, The RF return path to the bottom portion is generated through the conductive interface and the conductive structure. Device. [Form 20] The apparatus described in Embodiment 12, The aforementioned indexer is, The upper indexer section, Lower indexer section and A device equipped with the following features. [Form 21] The apparatus described in Embodiment 12, A device in which each of the plurality of extensions is configured to rotate the corresponding substrate. [Form 22] It is a device, A multi-station processing chamber including an upper plate and a bottom portion, wherein the multi-station processing chamber is configured to surround a plurality of stations, each including a base assembly for supporting a substrate for processing, A spindle located in the center between the plurality of stations and configured to rotate around a central axis, wherein the spindle includes a spindle electrically connected to the bottom portion, An actuator coupled to the spindle and configured to control the movement of the spindle in the Z direction, An indexer connected to the spindle and configured to rotate with the spindle, the indexer including a plurality of extensions, each configured to interlock with a corresponding substrate for transfer between stations, A conductive interface connected to the indexer and Equipped with, The spindle is configured to move upward in the Z direction toward a higher position so that the conductive interface contacts the upper portion during plasma processing. Each of the plurality of extensions is stopped when the spindle is in a higher position. Device. [Form 23] The apparatus described in Embodiment 22, The conductive interface comprises a solid cylindrical tube in the apparatus. [Form 24] The apparatus described in Embodiment 22, The conductive interface comprises a spiral cylindrical tube containing a plurality of horizontally oriented interlattice beams connected by a plurality of vertical links. [Form 25] The apparatus described in form 23, The conductive interface provides a non-spiral conductive path between the upper plate and the bottom portion when the conductive interface is in contact with the indexer. [Form 26] The apparatus described in Embodiment 22, The multi-station processing chamber includes four stations, Device. [Form 27] The apparatus described in Embodiment 22, A contact interface positioned on the upper plate, which facilitates the RF return path between the conductive interface and the upper plate. Furthermore, The aforementioned contact interface is flexible. Device. [Form 28] The apparatus described in Embodiment 22, The RF return path to the bottom portion is generated through the upper plate, the conductive interface, the indexer, and the spindle. Device. [Form 29] The apparatus described in Embodiment 22, The aforementioned indexer is, The upper indexer section, Lower indexer section and A device equipped with the following features. [Form 30] The apparatus described in Embodiment 22, A device in which each of the plurality of extensions is configured to rotate the corresponding substrate. [Form 31] It is a device, A multi-station processing chamber including an upper plate and a bottom portion, wherein the multi-station processing chamber is configured to surround a plurality of stations, each including a base assembly for supporting a substrate for processing, A spindle located in the center between the plurality of stations and configured to rotate around a central axis, wherein the spindle is movable and electrically connected to the upper plate, An actuator coupled to the spindle and configured to control the movement of the spindle in the Z direction, An indexer connected to the spindle and configured to rotate with the spindle, the indexer including a plurality of extensions, each configured to interlock with a corresponding substrate for transfer between stations, A conductive interface connected to the indexer, The bottom portion is electrically connected to a grounding structure Equipped with, The spindle is configured to move downward in the Z direction toward a lower position so that the conductive interface comes into contact with the grounding structure during plasma processing. Each of the aforementioned extensions is stopped when the spindle is in the lower position. Device. [Form 32] The apparatus described in Embodiment 31, The conductive interface comprises one or more solid cylindrical tubes in the apparatus. [Form 33] The apparatus described in Embodiment 31, The conductive interface comprises a spiral cylindrical tube containing a plurality of horizontally oriented interlattice beams connected by a plurality of vertical links. [Form 34] The apparatus described in form 33, The conductive interface provides a non-spiral conductive path between the upper plate and the bottom portion when the conductive interface is in contact with the indexer. [Form 35] The apparatus described in Embodiment 31, The multi-station processing chamber is an apparatus that includes four stations. [Form 36] The apparatus described in Embodiment 31, A contact interface positioned on a conductive structure, which facilitates the RF return path between the conductive interface and the conductive structure. Furthermore, The aforementioned contact interface is flexible. Device. [Form 37] The apparatus described in Embodiment 31, The RF return path from the bottom portion to ground is generated through the upper plate, the indexer, the spindle, the conductive interface, and the conductive structure. Device. [Form 38] The apparatus described in Embodiment 31, The conductive structure includes one or more conductive rods connected to the bottom structure. Device. [Form 39] It is a device, A multi-station processing chamber including an upper plate and a bottom portion, wherein the multi-station processing chamber is configured to surround a plurality of stations, each including a base assembly for supporting a substrate for processing, A spindle located in the center between the plurality of stations and configured to rotate around a central axis, wherein the spindle includes a spindle electrically connected to the bottom portion, An actuator coupled to the spindle and configured to control the movement of the spindle in the Z direction, An indexer connected to the spindle and configured to rotate with the spindle, the indexer including a plurality of extensions, each configured to interlock with a corresponding substrate for transfer between stations, A conductive interface connected to the indexer, wherein the end of the conductive interface extends into the moving space of the upper plate, and the conductive interface moves together with the spindle. A conductive seal and bellows assembly connected to the upper plate around the opening of the aforementioned space Equipped with, The end of the conductive interface engages with the conductive seal and bellows assembly through the bearing and makes continuous contact with the upper plate when the spindle is stopped or moving in the Z direction. Each of the aforementioned extensions is stopped when the spindle is moved to a lower position during plasma processing. Device. [Form 40] The apparatus described in Embodiment 39, The conductive interface comprises one or more solid cylindrical tubes in the apparatus. [Form 41] The apparatus described in Embodiment 39, The conductive interface comprises a spiral cylindrical tube containing a plurality of horizontally oriented interlattice beams connected by a plurality of vertical links. Device. [Form 42] The apparatus described in Embodiment 41, The conductive interface provides a non-spiral conductive path between the upper plate and the bottom portion when the conductive interface is in contact with the indexer. Device. [Form 43] The apparatus described in Embodiment 39, The multi-station processing chamber includes four stations, Device. [Form 44] The apparatus described in Embodiment 39, The RF return path to the bottom portion is generated through the upper plate, the conductive seal and bellows assembly, the conductive interface, the indexer, and the spindle. Device. [Form 45] The apparatus described in Embodiment 39, The aforementioned indexer is, The upper indexer section, Lower indexer section and A device equipped with the following features. [Form 46] The apparatus described in Embodiment 39, A device in which each of the plurality of extensions is configured to rotate the corresponding substrate. [Form 47] It is a device, An upper post assembly, wherein the upper post assembly is a conductive upper post assembly, A lower post assembly movably connected to the upper post assembly, wherein the lower post assembly is conductive and Equipped with, The upper post assembly and the lower post assembly are configured to provide an RF return path between the upper plate and the bottom portion of the multi-station processing chamber. Device. [Form 48] The apparatus described in Embodiment 47, The upper post assembly is, Upper post and The upper part of the upper post assembly, The bottom portion of the upper post assembly, The lip on the bottom portion of the upper post assembly and A device including a device. [Form 49] The apparatus described in form 48, The aforementioned upper post is cylindrical. Device. [Form 50] The apparatus described in Embodiment 47, The aforementioned lower post assembly is Lower post and The bottom of the lower post assembly, The base of the lower post assembly, The upper part of the lower post assembly, The lip on the upper portion of the lower post assembly and A device including a device. [Form 51] The apparatus described in Embodiment 50, The aforementioned lower post is cylindrical. Device. [Form 52] The apparatus described in Embodiment 47, A spring assembly electrically connected to the upper post assembly and the lower post assembly, wherein the spring assembly is configured to move the lower post assembly relative to the upper post assembly. A device that further enhances this feature. [Form 53] The apparatus described in form 52, The aforementioned spring assembly is A spring base electrically connected to the lower post assembly, A spring piston tube that electrically contacts the upper post assembly, wherein the spring piston tube comprises a spring piston tube movably connected to the spring base, A spring configured to be electrically in contact with the spring base and the upper post assembly and to move within the spring piston tube A device including a device. [Form 54] The apparatus described in form 53, An axial thrust bearing electrically connected to the spring base and the lower post base of the lower post assembly, wherein the axial thrust bearing is configured to allow rotation of the lower post assembly without rotating the upper post assembly. A device that further enhances this feature. [Form 55] The apparatus described in Embodiment 47, A first RF gasket is positioned on the upper post assembly and configured to make a first RF connection with the upper plate of the multi-station processing chamber, A second RF gasket configured to provide a second RF connection between the upper post assembly and the lower post assembly, A third RF gasket is positioned on the lower post assembly and configured to provide a third RF connection between the lower post assembly and the bottom portion of the multi-station processing chamber. A device that further enhances this feature. [Form 56] The apparatus described in form 55, The first RF gasket is positioned on the upper portion of the upper post assembly, The second RF gasket is positioned between a lip positioned on the bottom portion of the upper post assembly and a lip positioned on the upper portion of the lower post assembly. The third RF gasket is positioned on the bottom portion of the lower post assembly. Device. [Form 57] The apparatus described in Embodiment 56, The lower post assembly is configured to surround an indexer connected to the spindle of the multi-station processing chamber, and the lower post base is configured to contact the indexer. When the spindle connected to the indexer is in the lower position during plasma processing, the bottom of the lower post assembly is electrically connected to the bottom portion of the multi-station processing chamber via the third RF gasket, and the lip positioned on the bottom portion of the upper post assembly is electrically connected to the lip positioned on the upper portion of the lower post assembly via the second RF gasket. Device. [Form 58] The apparatus described in Embodiment 56, The lower post assembly is configured to surround an indexer connected to the spindle of the multi-station processing chamber, and the lower post base is configured to contact the indexer. When the spindle connected to the indexer is in the upper position, the bottom of the lower post assembly is separated from the bottom portion of the multi-station processing chamber, and the lip positioned on the bottom portion of the upper post assembly is separated from the lip positioned on the upper portion of the lower post assembly. Device.

Claims

1. It is a device, A multi-station processing chamber including an upper plate and a bottom portion, wherein the multi-station processing chamber is configured to surround a plurality of stations, each including a base assembly for supporting a substrate for processing, A spindle located in the center between the plurality of stations and configured to rotate around a central axis, wherein the spindle includes a spindle electrically connected to the bottom portion, A first actuator coupled to the spindle and configured to control the movement of the spindle in the Z direction, An indexer connected to the spindle and configured to rotate with the spindle, the indexer including a plurality of extensions, each configured to interlock with a corresponding substrate for transfer between stations, A conductive interface movably connected to the upper plate, A second actuator coupled to the conductive interface and configured to control the movement of the conductive interface in the Z direction, Equipped with, The conductive interface is configured to move downward in the Z direction and contact the indexer when each of the plurality of extensions is stopped and the spindle is moved to a lower position during plasma processing. Device.

2. The apparatus according to claim 1, The conductive interface comprises one or more solid cylindrical tubes in the apparatus.

3. The apparatus according to claim 1, The conductive interface comprises a spiral cylindrical tube containing a plurality of horizontally oriented interlattice beams connected by a plurality of vertical links.

4. The apparatus according to claim 3, The conductive interface provides a non-spiral conductive path between the upper plate and the bottom portion when the conductive interface is in contact with the indexer.

5. The apparatus according to claim 1, The multi-station processing chamber includes four stations, Device.

6. The apparatus according to claim 1, Pockets in the upper plate are configured to receive the conductive interface when the spindle is moved to an upper position, so that the plurality of extensions of the indexer can engage with one or more substrates at the plurality of stations. A device that further enhances this feature.

7. The apparatus according to claim 1, A contact interface positioned on the indexer, facilitating the RF return path between the conductive interface and the indexer. Furthermore, The aforementioned contact interface is flexible. Device.

8. The apparatus according to claim 1, The RF return path to the bottom portion is generated through the conductive interface, the indexer, and the spindle. Device.

9. The apparatus according to claim 1, The conductive interface is configured to move downward in the Z direction and to contact the outer wall of the channel in which the spindle moves in the Z direction. Device.

10. The apparatus according to claim 1, The aforementioned indexer is, The upper indexer section, Lower indexer section and A device equipped with the following features.

11. The apparatus according to claim 1, A device in which each of the plurality of extensions is configured to rotate the corresponding substrate.

12. It is a device, A multi-station processing chamber including an upper plate and a bottom portion, wherein the multi-station processing chamber is configured to surround a plurality of stations, each including a base assembly for supporting a substrate for processing, A spindle located in the center between the aforementioned multiple stations and configured to rotate around a central axis, A first actuator coupled to the spindle and configured to control the movement of the spindle in the Z direction, An indexer connected to the spindle and configured to rotate together with the spindle about the central axis, the indexer including a plurality of extensions, each configured to interlock with a corresponding substrate for transfer between stations, A conductive interface movably connected to the upper plate, A second actuator coupled to the conductive interface and configured to control the movement of the conductive interface in the Z direction, Equipped with, The conductive interface has a lower end portion that spans the diameter of the indexer, The conductive interface is configured to move downward in the Z direction and contact the conductive structure adjacent to the spindle and the indexer when each of the plurality of extensions is stopped and the spindle is moved to a lower position during plasma processing. The conductive structure is electrically coupled to the bottom portion. Device.

13. The apparatus according to claim 12, The apparatus wherein the conductive structure is an RF liner configured to surround the multiple bases of the multiple stations.

14. The apparatus according to claim 12, The apparatus wherein the conductive structure is one or more conductive rods.

15. The apparatus according to claim 12, The conductive interface comprises one or more solid cylindrical tubes in the apparatus.

16. The apparatus according to claim 12, The conductive interface comprises a spiral cylindrical tube containing a plurality of horizontally oriented interlattice beams connected by a plurality of vertical links, The conductive interface provides a non-spiral conductive path between the upper plate and the bottom portion when the conductive interface is in contact with the indexer. Device.

17. The apparatus according to claim 12, The multi-station processing chamber includes four stations, Device.

18. The apparatus according to claim 12, Pockets in the upper plate are configured to receive the conductive interface when the spindle is moved to an upper position, so that the plurality of extensions of the indexer can engage with one or more substrates at the plurality of stations. A device that further enhances this feature.

19. The apparatus according to claim 12, The RF return path to the bottom portion is generated through the conductive interface and the conductive structure. Device.

20. The apparatus according to claim 12, The aforementioned indexer is, The upper indexer section, Lower indexer section and A device equipped with the following features.

21. The apparatus according to claim 12, A device in which each of the plurality of extensions is configured to rotate the corresponding substrate.

Images