Amine oxides for etching, stripping, and cleaning applications

Abstract

The present invention provides a method for cleaning, stripping, or etching the surface of a semiconductor substrate. [Solution] A method for cleaning a microelectronic substrate involves contacting the microelectronic substrate, such as a semiconductor device, with an amine oxide selected from the group consisting of N,N-dimethylethanolamine N-oxide, triethanolamine N-oxide, ethaneamine, 2,2'-oxybis[N,N-dimethyl-,N,N'-dioxide], 1-methylpyrrolidine N-oxide, N,N-dimethylcyclohexylamine N-oxide, and mixtures thereof, for a time and temperature sufficient for cleaning the substrate.

Description

Technical Field

[0001] Cross - reference to Related Applications Not applicable

[0002] The present disclosure generally relates to a method of treating the surface of a semiconductor substrate with an amine oxide. Specifically, the present disclosure provides a method of cleaning, stripping, or etching the surface of a semiconductor substrate by contacting the semiconductor substrate with an amine oxide.

Background Art

[0003] During the manufacture of electronic devices, such as integrated circuits (ICs) and transistors, layers of electronic elements and connectors are etched on the surface of a semiconductor substrate, which is also referred to as a slice or wafer, or a film is formed on the surface. One factor that affects the quality of the manufactured elements is the cleanliness of the substrate surface before etching or film formation. This is because impurities or contaminants can be trapped between the layers and affect the adhesion between those layers. As the size of electronic elements and circuits decreases with technological advancements, the need to ensure the cleanliness of the substrate surface has become even greater for the purpose of improving the electrical characteristics and reliability of the manufactured devices.

[0004] Possible surface contaminants include organic compounds (such as grease or solvent vapors), ionic materials, metal oxides / hydroxides, photoresists, or silicon particles. Chemical cleaning, etching, and stripping methods are commonly used to remove these undesirable substances and obtain a substantially clean surface before further processing. Oxidizing agents, such as hydrogen peroxide, are widely used in formulations for the etching, stripping, and cleaning processes, often in combination with acids or bases, such as ammonia. However, hydrogen peroxide is known to be thermally or chemically unstable at high or low pH levels. Furthermore, in some cases, hydrogen peroxide can be undesirable because its high oxidation intensity can damage metals or dielectric materials, photoresists, and organic materials. Therefore, there is a need for organic oxidizing agents with low toxicity and an oxidation intensity range compatible with these materials. [Overview of the project]

[0005] In aspects of this disclosure generally provide a method for cleaning a microelectronic substrate by contacting the substrate with a composition containing one or more amine oxides for a time and temperature sufficient to clean the substrate, wherein the amine oxides include, but are not limited to, N,N-dimethylethanolamine N-oxide (CAS#10489-99-3), triethanolamine N-oxide (CAS#7529-23-9), ethaneamine, 2,2'-oxybis[N,N-dimethyl-,N,N'-dioxide] (CAS#565236-99-9), 1-methylpyrrolidine N-oxide (CAS#7529-17-1), N,N-dimethylcyclohexylamine N-oxide, and mixtures thereof. The method of this disclosure can be carried out on various substrates, including, but is not limited to, semiconductors such as gallium arsenide, silicon wafers with process residues, and transient and non-transient layers applied in the manufacture of semiconductor devices such as integrated circuits, sapphire wafers, microelectromechanical devices (MEMs), and optoelectronic devices.

[0006] In some embodiments, the substrate has a photoresist layer formed thereon, and the cleaning step removes the photoresist from the substrate.

[0007] In another embodiment, the substrate has deposited etching residue thereon, and the cleaning step removes the etching residue from the substrate.

[0008] In yet another embodiment, the substrate has ash residue adhering thereto, and the cleaning step removes the ash residue from the substrate.

[0009] In a further embodiment, the substrate has metal residue adhering thereto, and the cleaning step removes the metal residue from the substrate.

[0010] In yet another embodiment, the substrate has a dielectric layer formed on the substrate, such as a low-k dielectric material containing oxide, photoresist, or etching residue, and the cleaning step partially removes the oxide and completely removes the photoresist or etching residue from the low-k dielectric material.

[0011] In some embodiments, the substrate has or comprises an inorganic oxide-containing surface that supports attached process residue, and the compositions of the present disclosure chemically etch the inorganic oxide-containing surface to facilitate the removal of attached process residue. [Brief explanation of the drawing]

[0012] [Figure 1] This graph shows the redox potential values ​​of the amine oxides of this disclosure together with reference values ​​for hydrogen peroxide and N-methylmorpholine oxide; and [Figure 2] This graph shows the relative corrosion rates using hydrogen peroxide, N-methylmorpholine oxide, and the amine oxides of this disclosure. [Modes for carrying out the invention]

[0013] The following terms shall have the meanings set forth below.

[0014] The term “comprising” and its derivatives are not intended to exclude any additional elements, processes, or procedures, whether or not they are disclosed herein. For the purpose of avoiding any misunderstanding, all compositions claimed herein by the use of the term “comprising” may include any additional additives or compounds unless otherwise stated. In contrast, where the term “consisting essentially of” appears herein, it excludes any other elements, processes, or procedures from any subsequent enumeration unless they are essential to the operability, and where the term “consisting of” is used, it excludes any elements, processes, or procedures that are not specifically described or enumerated. The term “or” refers to the enumerated components individually and in any combination unless otherwise specified.

[0015] The articles “a” and “an” are used herein to indicate that the grammatical object of the article is one or more (i.e., at least one). For example, “an amineoxide” means one amine oxide or more than one amine oxide. Phrases such as “in one embodiment” and “according to one embodiment” generally mean that the particular feature, structure, or characteristic that follows the phrase is included in at least one embodiment of the disclosure and may also be included in more than one embodiment of the disclosure. Importantly, such phrases do not necessarily refer to identical embodiments. In this specification, “may,” “can,” and “could” are used to describe that an element or feature is included or has a certain characteristic. When "might" is used, it is not required that the specific element or feature be included or have a certain characteristic.

[0016] Where used herein, the term "approximately" allows for a degree of variability in a value or range, for example, that degree may be within 10%, 5%, or 1% of the indicated value or range limit.

[0017] The terms “preferred” and “preferred” refer to embodiments that may provide certain benefits under certain circumstances. However, other embodiments may also be preferred under the same or different circumstances. Furthermore, the description of one or more preferred embodiments does not imply that other embodiments are unhelpful, nor is it intended to exclude other embodiments from the scope of this disclosure.

[0018] The terms “optional” or “optional” mean that the events, circumstances, or materials described therein may or may not occur or exist, and that the description includes both the cases in which such events, circumstances, or materials occur or exist, and the cases in which they do not occur or exist.

[0019] Values ​​expressed in range format must be interpreted flexibly, including not only the numerical limit specified for the range, but also all individual numerical values ​​or subranges contained within that range, as if each numerical value and subrange were explicitly stated. For example, a range such as 1-6 must be considered to specifically disclose subranges such as 1-3, 2-4, 3-6, and the individual numbers contained within those ranges, such as 1, 2, 3, 4, 5, and 6. This applies regardless of the width of the range.

[0020] The terms “low-k dielectric material” and “low dielectric constant dielectric material,” as used herein, are intended to refer to dielectric materials having a dielectric constant of less than about 3.5, preferably about 2.5 or less. Typically, the terms “low-k dielectric material” and “low dielectric constant dielectric material,” as used herein, refer to dielectric materials having a dielectric constant as low as only about 1.4 to about 3.5. This disclosure may also be useful in cleaning substrates having dielectric layers with k values ​​of 3.5 to 4.5.

[0021] The term "substantially absent" refers to a composition in which a particular compound or part is present in an amount that does not have a substantial effect on the composition. In some embodiments, "substantially absent" may refer to a composition in which a particular compound or part is present in an amount of less than 2% by weight, or less than 1% by weight, or less than 0.5% by weight, or less than 0.1% by weight, or even less than 0.01% by weight, based on the total weight of the composition, or the absence of any amount of the particular compound or part in any individual composition.

[0022] The amine oxides of this disclosure have been developed to have different oxidizing capabilities, which, remarkably, offer the possibility of selectively oxidizing the desired material to which the amine oxides of this disclosure are applied without damaging other materials. Furthermore, since the corrosiveness of each amine oxide of this disclosure with respect to different metals, such as Al, Cu, and Co, also differs slightly from one another, it is possible to incorporate them with or without corrosion inhibitors in formulations specialized for various applications.

[0023] This disclosure generally relates to a method for cleaning a microelectronic substrate by contacting the substrate with a composition containing one or more amine oxides, wherein the amine oxides include N,N-dimethylethanolamine N-oxide (CAS#10489-99-3), triethanolamine N-oxide (CAS#7529-23-9), and ethane. Amines, 2,2’-oxybis[N,N-dimethyl-, N,N’-dioxide] (CAS#565236-99-9), 1-methylpyrrolidine N-oxide (CAS7529-17-1), N,N-dimethylcyclohexylamine N-oxide, and mixtures thereof are included, but not limited thereto. The amine oxides of the present disclosure have been found to exhibit a range of oxidizing capabilities and are also expected to exhibit acceptable toxicity. Moreover, since the amine oxides exhibit a range of oxidizing capabilities, they can provide various oxidation strengths, and thus can be used in various compositions for etching, stripping, and cleaning various microelectronic substrates, metals, photoresists, and organic materials. The amine oxides of the present disclosure also enable the design of compositions for use in special wet processing steps, for use on special types or mixtures of metal surfaces, or for obtaining certain desired effects on the surfaces of microelectronic substrates.

[0024] The amine oxides of the present disclosure can be prepared through the reaction of a suitable amine (including, but not limited to, aromatic amines, aliphatic amines, cyclic amines, and cycloaliphatic amines) with an oxidizing agent, such as, but not limited to, hydrogen peroxide. The ratio of amine oxide to unreacted amine in the reaction mixture can be determined using potentiometric titration with a strong acid, such as hydrochloric acid (HCl). The amine oxide content can be calculated from the ratio of strong base to total base.

[0025] According to an embodiment, the composition can contain at least about 0.01 wt% (e.g., at least about 0.5 wt%, or at least about 1 wt%, or at least about 2 wt%, or at least about 3 wt%, or at least about 5 wt%) of an amine oxide, and / or up to about 30 wt% (e.g., up to about 25 wt%, or up to about 20 wt%, or up to about 17 wt%, or up to about 15 wt%, or up to about 12 wt%, or up to about 10 wt%), where wt% is based on the total weight of the composition. In yet another embodiment, the composition is substantially free of hydrogen peroxide.

[0026] The compositions of the present disclosure can also include other materials known to those skilled in the art that are used to clean, etch, or strip the surface of a microelectronic substrate. Such materials include, but are not limited to, organic solvents; water; metal halides, hydroxides, borides, alkoxides, oxides, and ammonium salts; organic acids; pH adjusters; corrosion inhibitors; surfactants; biocides; defoamers; chelating agents; and antibacterial agents.

[0027] The compositions containing amine oxide of the present disclosure are used to clean the surfaces of substrates that tend to cause major problems due to contamination with metals or particles, such as semiconductors, glass, metals, ceramic materials, resins, magnetic materials, superconductors, etc. Specifically, the compositions containing amine oxide of the present disclosure are more suitably used to clean the surfaces of semiconductor devices, such as semiconductor elements and display devices, which require a highly purified surface during the manufacture of substrates for semiconductor devices. Such substrates can have wiring and electrodes, insulating materials, low-k dielectric materials, metal oxides, organic compounds, and metals provided on their surfaces. Examples of materials for wiring and electrodes include semiconductor materials such as Si, Ge, Ga, and As; insulating materials such as SiO2, silicon nitride, glass, metal oxides such as copper oxide or aluminum oxide, transition metal oxides such as titanium oxide, tantalum oxide, hafnium oxide, and zirconium oxide, (Ba, Sr)TiO3 (BST), organic compounds such as polyimide, and organic thermosetting resins; metals such as W, Cu, and Al, or their alloys, silicides, and nitrides, etc.

[0028] Specifically, the compositions containing amine oxide of the present disclosure are suitably used to clean semiconductor devices having transition metals or transition metal compounds on their surfaces. Examples of transition metals include tungsten, copper, aluminum, titanium, chromium, cobalt, zirconium, haf nium, molybdenum, ruthenium, gold, platinum, silver, etc. Examples of transition metal compounds include nitrides, oxides, and silicides.

[0029] According to one embodiment, the method of the present disclosure comprises the step of contacting a substrate with a composition containing the amine oxide, the substrate comprising a photoresist layer, an anti-reflective coating layer, an inorganic or organic contaminant, for example a polymer based on styrene resin, acrylic resin, novolac resin, cyclic olefin resin, or maleic anhydride resin, etching and ash residue based on fluorine, chlorine, bromine, or iodine ions, and a slurry residue containing oxygen; metallic impurities containing tantalum, titanium, copper, aluminum, or tungsten, or silica or alumina abrasives together with other common slurry additives, for example an oxidizing agent, buffering agent, stabilizer, surfactant, passivating agent, complexing agent, corrosion inhibitor, or other actionant.

[0030] The cleaning method used in this disclosure can be performed by bringing the composition into direct contact with the substrate. Methods for bringing the amine oxide-containing composition into contact with the substrate include a dip-type contact method in which the substrate is immersed in a cleaning tank filled with the composition, a spin-type contact method in which the substrate is rotated at high speed while the composition is flowed onto the substrate from a nozzle, and a spray-type contact method in which the substrate is cleaned by spraying the composition onto the substrate. Apparatus for performing the above cleaning method includes a batch-type cleaning apparatus that simultaneously cleans multiple substrates housed in a cassette, and a single-wafer cleaning apparatus that cleans a single substrate fitted in a holder.

[0031] The cleaning time is typically 30 seconds to 30 minutes, preferably 1 to 15 minutes, for batch-type cleaning equipment, and typically 1 second to 15 minutes, preferably 5 seconds to 5 minutes, for single-wafer-type cleaning equipment. If the cleaning time is too short, it may be difficult to obtain a sufficient cleaning effect. If the cleaning time is too long, a corresponding cleaning effect cannot be obtained, which leads to a decrease in throughput. The amine oxide-containing compositions of this disclosure can be applied to the substrate by any of the above methods. From the viewpoint of removing contaminants more effectively in a short time, the use of spin-type or spray-type cleaning methods may be more preferable. Furthermore, if the compositions of this disclosure are applied to single-wafer-type cleaning equipment that has problems with reducing cleaning time and the amount of cleaning solution used, these problems may be adequately resolved.

[0032] The composition temperature used in the above method is usually room temperature. To improve the cleaning effect, the composition can be heated to a temperature of approximately 40°C to 70°C. Furthermore, if the substrate to be cleaned has silicon exposed on its surface, the remaining organic contaminants tend to adhere to the silicon surface. Therefore, in such cases, it is preferable to heat-treat the substrate to be cleaned at a temperature of 300°C or higher to thermally decompose the attached organic matter, or to subject it to ozonated water treatment to oxidatively decompose the attached organic matter.

[0033] Furthermore, the cleaning method of this disclosure can preferably be used in combination with a physical cleaning method, such as a mechanical cleaning method like scrubbing with a cleaning brush, or a megasonic cleaning method. In particular, when megasonic irradiation or brush scrubbing is used in combination with the amine oxide-containing composition of this disclosure, the removal of particulate contaminants is further improved and the cleaning time is shortened. In addition, cleaning after chemical and mechanical polishing is preferably performed using a resin brush.

[0034] The resin material of the brush can be selected arbitrarily; for example, the brush can be made from PVA (polyvinyl alcohol). Furthermore, when the substrate is irradiated with megasonic waves having a frequency of 0.5 MHz or higher, the removal of particulate contaminants may be significantly improved due to the synergistic effect with amine oxides. In addition, before and / or after performing the cleaning method of the present invention, the substrate can be cleaned with electrolyzed ionized water obtained by electrolysis of water, or hydrogen water prepared by dissolving hydrogen gas in water.

[0035] In another embodiment, the disclosure also includes a cleaning method used in combination with the following photoresist stripping process, which is typically performed before the cleaning method. Any suitable dry stripping process can be used, such as O2 plasma ashing, ozone gas phase treatment, fluorine plasma treatment, and thermal H2 gas treatment.

[0036] Furthermore, the cleaning method can be used in combination with the organic wet stripping method. The organic wet stripping can be performed before, after, or both before and after the cleaning method of this disclosure. Any conventional organic wet stripping solution can be used, and it is expected that those skilled in the art will be able to select an appropriate organic wet stripping agent.

[0037] In another embodiment, the compositions of the present disclosure can be used to clean a semiconductor substrate after chemical mechanical planarization or polishing of a metal film. That is, the method of the present disclosure relates to cleaning the planarized surface of a semiconductor wafer having metallic features (conductive features), e.g., interlayer connectors or conductive wires. The surface may include, for example, metals, e.g., copper, aluminum, platinum, titanium, silver, tungsten, and / or tantalum; dielectric materials, e.g., silica, borosilicate glass (BPSG), borosilicate glass (BSG), or phosphate glass; carbon-doped silica, porous silica, and / or low-k dielectric materials, e.g., silicon dioxide deposited by plasma-induced chemical vapor deposition (PECVD), spin coating processes, or decomposition from tetraethyl orthosilicate (TEOS) precursors. After such a wafer is planarized, residual particles, e.g., slurry, metallic features, dielectric materials, pads, and those originating from the wafer, remain scattered on the planarized surface. The method involves contacting the planarized surface of a wafer with a composition containing the amine oxide of the Disclosure at a temperature and time (e.g., as described above) that is effective in removing at least a portion of residual particles from the planarized surface of the wafer. In embodiments of the method of the Disclosure, the composition is applied to a semiconductor substrate after the formation of copper or aluminum wiring and CMP of the wiring.

[0038] According to another embodiment of the present disclosure, the surface of a semiconductor substrate is treated with an amine oxide to clean the surface by removing contaminants, such as organic compounds, oxide layers, and ionic substances.

[0039] In accordance with embodiments of the present disclosure, the surface of a semiconductor substrate is treated with an amine oxide to remove the surface of a photoresist layer that is no longer necessary, for example, after the etching step has been completed.

[0040] According to yet another embodiment of the present disclosure, the surface of a semiconductor substrate is treated with an amine oxide to etch the surface for the purpose of chemically removing one or more layers of the substrate. In some embodiments, a portion of the substrate may be protected with an etching-resistant masking material, such as silicon nitride.

[0041] Surprisingly, the amine oxides of this disclosure were found to exhibit a lower oxidation intensity range than those of hydrogen peroxide. The strong oxidizing power of hydrogen peroxide is used during the manufacture of semiconductor devices, which can lead to metal oxidation. It is well known that hydrogen peroxide can cause undesirable damage to photoresists and organic materials. This means that the amine oxides of this disclosure are compatible with a wider range of metals, photoresists, and organic materials and can be used in stripping, cleaning, and etching processes on a wider range of semiconductor substrates without causing undesirable damage. Furthermore, these amine oxides are thermally more stable than hydrogen peroxide, which means they have a longer shelf life. That is, what is also provided is a composition containing the amine oxides of this disclosure, which is substantially free of hydrogen peroxide. [Examples]

[0042] Example 1: Preparation of N,N-dimethylethanolamine N-oxide 37.0 grams of deionized (DI) water and 284.4 grams of dimethylethanolamine were added to a 1.0 L round-bottom glass reactor equipped with a stirrer, nitrogen line, dropping funnel, and top condenser. After blowing nitrogen gas in for 5 minutes, the reactor was heated to 57°C (135°F). Then, 350.0 grams of 31% hydrogen peroxide were slowly added while maintaining the reaction temperature at 57-60°C (135-140°F). After all the hydrogen peroxide had been added, the reaction mixture was immersed in the mixture for 60 minutes while maintaining the reaction temperature at 57-60°C (135-140°F). The reaction mixture was cooled to room temperature (RT), and the finished product was filled into 32 oz plastic bottles under a nitrogen pad.

[0043] Titration showed that approximately 99% of the dimethylethanolamine was oxidized.

[0044] Example 2: Preparation of triethanolamine N-oxide 60 grams of DI water and 256.4 grams of triethanolamine were added to a 1.0 L round-bottom glass reactor equipped with a stirrer, nitrogen line, dropping funnel, and top condenser. After blowing nitrogen gas for 5 minutes, the reactor was heated to 57°C (135°F). Then, 278.0 grams of 31% hydrogen peroxide were slowly added while maintaining the reaction temperature at 57-60°C (135-140°F). After all the hydrogen peroxide had been added, the reaction mixture was left to stand for 60 minutes while maintaining the reaction temperature at 57-60°C (135-140°F). The reaction mixture was cooled to RT, and the finished product was filled into 32 oz plastic bottles under a nitrogen pad.

[0045] Titration showed that approximately 99% of the triethanolamine was oxidized.

[0046] Example 3: Preparation of ethaneamine, 2,2'-oxybis[N,N-dimethyl-,N,N'-dioxide] In a 1.0 L round-bottom glass reactor equipped with a stirrer, nitrogen line, dropping funnel, and top condenser, 10.0 g of DI water and 277.6 g of bis-(2-dimethylaminoethyl) ether were added. After blowing nitrogen gas for 5 minutes, the reactor was heated to 57°C (135°F). Then, while maintaining the reaction temperature at 57-60°C (135-140°F), 280.0 g of 31% hydrogen peroxide was slowly added. After all the hydrogen peroxide had been added, the reaction mixture was left to stand for 60 minutes while maintaining the reaction temperature at 57-60°C (135-140°F). The reaction mixture was cooled to RT, and the finished product was filled into 32 oz plastic bottles under a nitrogen pad.

[0047] Titration showed that approximately 95% of the bis-(2-dimethylaminoethyl) ether was oxidized.

[0048] Example 4: Preparation of 1-methylpyrrolidine N-oxide (XHE-139) 20.5 grams of DI water and 232.8 grams of 1-methylpyrrolidine were added to a 1.0 L round-bottom glass reactor equipped with a stirrer, nitrogen line, dropping funnel, and top condenser. After blowing in the solution for 5 minutes, the reactor was heated to 57°C. Then, 300.0 grams of 31% hydrogen peroxide were slowly added while maintaining the reactant temperature at 57-60°C (135-140°F). After all the hydrogen peroxide had been added, the reactants were left to stand for 60 minutes while maintaining the reaction temperature at 57-60°C (135-140°F). The reactants were cooled to RT, and the finished product was filled into 32 oz plastic bottles under a nitrogen pad.

[0049] Titration showed that approximately 99% of 1-methylpyrrolidine was oxidized.

[0050] Example 5: Preparation of N,N-dimethylcyclohexylamine N-oxide In a 1.0 L round-bottom glass reactor equipped with a stirrer, nitrogen line, dropping funnel, and top condenser, 114.0 g of DI water and 289.9 g of N,N-dimethylcyclohexylamine were added. After blowing nitrogen gas for 5 minutes, the reactor was heated to 57°C. Then, while maintaining the reaction temperature at 57-60°C (135-140°F), 250.0 g of 31% hydrogen peroxide was slowly added. After all the hydrogen peroxide had been added, the reaction mixture was left to stand for 60 minutes while maintaining the reaction temperature at 57-60°C (135-140°F). The reaction mixture was cooled to RT, and the finished product was filled into 32 oz plastic bottles under a nitrogen pad.

[0051] Titration revealed that approximately 72% of N,N-dimethylcyclohexylamine was oxidized.

[0052] Referring to Figure 1, the redox potentials of N,N-dimethylethanolamine N-oxide (Example 1), triethanolamine N-oxide (Example 2), and ethaneamine, 2,2'-oxybis[N,N-dimethyl-,N,N'-dioxide] (Example 3) are shown together with the reference values ​​for hydrogen peroxide (H2O2) and N-methylmorpholine-N-oxide (NMMO). It is shown that the redox potentials of the amine oxides in this disclosure are lower than those of hydrogen peroxide but higher than those of N-methylmorpholine oxide.

[0053] Referring to Figure 2, the corrosion rates of the above amine oxides, as well as N-methylmorpholine oxide and hydrogen peroxide, on various metals are shown. It is shown that the corrosion rate of the amine oxides of this disclosure is slower than that of hydrogen peroxide.

[0054] Naturally, the embodiments described above are illustrative and not intended to be limiting in any way. The embodiments of the present invention can accept many modifications in form, part arrangement, detail, and operating sequence. Therefore, the present invention is intended to encompass all such modifications within its scope.

Claims

1. A method for cleaning a microelectronics substrate, comprising contacting the substrate with a composition comprising an amine oxide selected from the group consisting of triethanolamine N-oxide, N,N-dimethylethanolamine N-oxide, ethaneamine, 2,2'-oxybis[N,N-dimethyl-,N,N'-dioxide], 1-methylpyrrolidine N-oxide, N,N-dimethylcyclohexylamine N-oxide, and mixtures thereof.

2. The method according to claim 1, wherein the microelectronic substrate includes a semiconductor, glass, metal, ceramic material, resin, magnetic material, or superconductor.

3. The method according to claim 1, wherein the microelectronic substrate includes a semiconductor on its surface provided with wiring and electrodes, an insulating material, a low-k dielectric material, a metal oxide, an organic compound, or a metal.

4. The wiring and electrodes contain silicon, germanium, gallium, and arsenide; the insulating material is SiO ２ , silicon nitride, or glass; the metal oxide is copper oxide, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zirconium oxide, or (Ba,Sr)TiO ３ The method according to claim 3, wherein the organic compound comprises polyimide or an organic thermosetting resin; and the metal comprises tungsten, copper, aluminum, or alloys, silicides, and nitrides thereof.

5. The method according to claim 1, wherein the microelectronic substrate has a photoresist layer formed thereon, and the contact between the substrate and the composition removes the photoresist layer from the substrate.

6. The method according to claim 1, wherein the microelectronic substrate has ash residue attached thereto, and the contact between the substrate and the composition removes the ash residue from the substrate.

7. The method according to claim 1, wherein the microelectronic substrate has etching residue attached thereto, and the contact between the substrate and the composition removes the etching residue from the substrate.

8. The method according to claim 1, wherein the microelectronic substrate has metal residue attached thereto, and the contact between the substrate and the composition removes the metal residue from the substrate.

9. The method according to claim 1, wherein the microelectronic substrate has a low-k dielectric material formed thereon that contains an oxide, a photoresist, or etching residue, and the contact between the substrate and the composition partially removes the oxide and completely removes the photoresist or etching residue from the low-k dielectric material.

10. The method according to claim 1, wherein the microelectronic substrate includes an inorganic oxide-containing surface that supports attached process residue, and the contact between the substrate and the composition chemically etches the inorganic oxide-containing surface to promote the removal of the attached process residue.

11. The method according to claim 1, wherein the composition substantially does not contain hydrogen peroxide.

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