Semiconductor equipment

By dividing and electrically connecting gate electrodes of transistors with distinct conductive films, the semiconductor devices mitigate electrostatic discharge risks, ensuring efficient current supply and maintaining yield in larger panel sizes.

JP2026085913AActive Publication Date: 2026-05-25SEMICON ENERGY LAB CO LTD
View PDF 2 Cites 0 Cited by

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SEMICON ENERGY LAB CO LTD
Filing Date
2026-02-24
Publication Date
2026-05-25

AI Technical Summary

Technical Problem

The increase in panel size of semiconductor displays using transistors with amorphous silicon or oxide semiconductors leads to larger transistors, increasing the likelihood of electrostatic discharge due to the antenna effect, which reduces yield and requires larger current supply capacity, leading to layout constraints and electrostatic discharge damage.

Method used

The gate electrodes of transistors are divided into multiple conductive films, electrically connected by a distinct conductive film, reducing the surface area and minimizing charge accumulation during manufacturing processes, thereby preventing electrostatic discharge.

Benefits of technology

This configuration reduces the risk of electrostatic discharge, maintaining yield and enabling efficient current supply capacity without increasing transistor size, thus addressing the challenges of larger panel sizes.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 2026085913000001_ABST
    Figure 2026085913000001_ABST
Patent Text Reader

Abstract

A semiconductor device that can prevent yield reduction due to electrostatic discharge. [Solution] A scan line driving circuit that supplies signals to the scan line for selecting multiple pixels is provided above It has a shift register that generates the signal, and in the above shift register, multiple A single conductive film that functions as the gate electrode of a transistor is divided into multiple parts, and the divided conductive film The films are electrically connected by the divided conductive films and conductive films formed in different layers. The configuration is as follows: The transistors on the output side of the shift register are among the multiple transistors mentioned above. It shall be included.
Need to check novelty before this filing date? Find Prior Art