Light-emitting device and method for manufacturing the same, and apparatus including a light-emitting device

Abstract

This technology provides advantages in reducing the manufacturing cost of a light-emitting device in which the optical distance between the lower electrode and the reflective material differs between subpixels that emit light of different colors. [Solution] The light-emitting device has a plurality of sub-pixels having a lower electrode and an upper electrode, the plurality of sub-pixels including a first sub-pixel and a second sub-pixel, the first sub-pixel having a first reflective member below a first lower electrode which is the lower electrode of the first sub-pixel, and the second sub-pixel having a second reflective member below a second lower electrode which is the lower electrode of the second sub-pixel. The light-emitting device includes an insulating film disposed below the lower electrodes of the plurality of sub-pixels so as to cover the first reflective member and the second reflective member, the insulating film having a first sub-wavelength structure disposed between the first reflective member and the first lower electrode, and a second sub-wavelength structure disposed between the second reflective member and the second lower electrode, the first sub-wavelength structure and the second sub-wavelength structure having mutually different effective refractive indices.

Description

Technical Field

[0001] The present invention relates to a light-emitting device, a method for manufacturing the same, and a device including the light-emitting device.

Background Art

[0002] Patent Document 1 describes an organic device having an optical adjustment film made of a SiO2 film between a lower electrode and a reflection member of each of a red light-emitting pixel, a green light-emitting pixel, and a blue light-emitting pixel, and a method for manufacturing the same. The optical adjustment film of each of the red light-emitting pixel, the green light-emitting pixel, and the blue light-emitting pixel is a film that defines an optical distance between the lower electrode and the reflection member. In Patent Document 1, different optical distances are realized for each color of the light-emitting pixel by varying the thickness of the optical adjustment film for each color of the light-emitting pixel. Such an optical adjustment film is realized by repeating a film-forming process, a photolithography process, and an etching process.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] When realizing different optical distances for each color by repeating a film-forming process, a photolithography process, and an etching process, there is a problem that the number of processes is large and the manufacturing cost is high. The same applies when forming an optical adjustment film having different refractive indexes for each color by repeating a film-forming process, a photolithography process, and an etching process.

[0005] An object of the present invention is to provide a technique advantageous for reducing the manufacturing cost of a light-emitting device in which the optical distance between a lower electrode and a reflection member is different between sub-pixels that emit light of different colors.

Means for Solving the Problems

[0006] One aspect of the present invention relates to a light-emitting device having a plurality of subpixels having a lower electrode and an upper electrode, wherein the plurality of subpixels include a first subpixel and a second subpixel, the first subpixel having a first reflective member below a first lower electrode which is the lower electrode of the first subpixel, and the second subpixel having a second reflective member below a second lower electrode which is the lower electrode of the second subpixel, wherein the light-emitting device comprises an insulating film disposed below the lower electrodes of the plurality of subpixels so as to cover the first reflective member and the second reflective member, the insulating film having a first subwavelength structure disposed between the first reflective member and the first lower electrode, and a second subwavelength structure disposed between the second reflective member and the second lower electrode, the first subwavelength structure and the second subwavelength structure having mutually different effective refractive indices. [Effects of the Invention]

[0007] According to the present invention, a technology is provided that is advantageous in reducing the manufacturing cost of a light-emitting device in which the optical distance between the lower electrode and the reflective member differs between subpixels with different colors of emitted light. [Brief explanation of the drawing]

[0008] [Figure 1] A schematic diagram showing the configuration of a light-emitting device according to one embodiment. [Figure 2] A schematic diagram showing an example configuration of an imprint apparatus that can be used to form an insulating film (optical adjustment film) that defines the optical distance between the reflective member and the lower electrode. [Figure 3] A schematic cross-sectional diagram illustrating the manufacturing method of a light-emitting device. [Figure 4] A schematic cross-sectional diagram illustrating the manufacturing method of a light-emitting device. [Figure 5] A schematic cross-sectional diagram illustrating the manufacturing method of a light-emitting device. [Figure 6] A schematic cross-sectional diagram illustrating the manufacturing method of a light-emitting device. [Figure 7] A schematic cross-sectional diagram illustrating the manufacturing method of a light-emitting device. [Figure 8] Schematic cross-sectional view for explaining a method of manufacturing a light-emitting device. [Figure 9] Schematic cross-sectional view for explaining a method of manufacturing a light-emitting device. [Figure 10] Schematic cross-sectional view for explaining a method of manufacturing a light-emitting device. [Figure 11] Schematic cross-sectional view for explaining a method of manufacturing a light-emitting device. [Figure 12] Schematic diagram showing the configuration of a mold. [Figure 13] Schematic cross-sectional view for explaining a method of manufacturing a light-emitting device. [Figure 14] Diagram illustrating the replication process of a mold. [Figure 15] Diagram illustrating an application example of a light-emitting device. [Figure 16] Diagram illustrating an application example of a light-emitting device. [Figure 17] Diagram illustrating an application example of a light-emitting device. [Figure 18] Diagram illustrating an application example of a light-emitting device. [Figure 19] Diagram illustrating an application example of a light-emitting device. [Figure 20] Diagram illustrating an application example of a light-emitting device. [Figure 21] Diagram illustrating an application example of a light-emitting device. [Figure 22] Diagram illustrating an application example of a light-emitting device. [Figure 23] Diagram illustrating an application example of a light-emitting device.

Mode for Carrying Out the Invention

[0009] Hereinafter, preferred embodiments of the present invention will be described in detail based on the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiments, not all of these plurality of features are essential for the invention, and the plurality of features may be arbitrarily combined. Further, in the accompanying drawings, the same or similar configurations are denoted by the same reference numerals, and redundant descriptions are omitted.

[0010] Figure 1 schematically shows the configuration of a light-emitting device 1 according to one embodiment. The light-emitting device 1 may be configured as an organic light-emitting device, an organic EL device, or an OLED. The light-emitting device 1 may also be configured as a display device. The light-emitting device 1 has a plurality of pixels, and each pixel may have a plurality of subpixels 10. In one aspect, the plurality of subpixels 10 may include a first subpixel 11 and a second subpixel 12. In another aspect, the plurality of subpixels 10 may include a first subpixel 11, a second subpixel 12, and a third subpixel 13. The first subpixel 11, the second subpixel 12, and the third subpixel 13 are subpixels that emit light of different colors (wavelength bands). Each pixel may have even more subpixels. In one example, the first subpixel 11 is a subpixel that emits blue light, the second subpixel 12 is a subpixel that emits green light, and the third subpixel 13 is a subpixel that emits red light. Although Figure 1 shows only one first subpixel 11, one second subpixel 12, and one third subpixel 13, the light-emitting device 1 can be configured to include more subpixels 10 depending on the application.

[0011] The first sub-pixel 11 may have a first reflective member 121a and a first lower electrode 131a. The second sub-pixel 12 may have a second reflective member 121b and a second lower electrode 131b. The third sub-pixel 13 may have a third reflective member 121c and a third lower electrode 131c. Here, when the first reflective member 121a, the second reflective member 121b, and the third reflective member 121c are described without distinction from one another, they will be referred to as the reflective member 121. Similarly, when the first lower electrode 131a, the second lower electrode 131b, and the third lower electrode 131c are described without distinction from one another, they will be referred to as the lower electrode 131. The reflective member 121 may have, for example, a laminated structure of Ti, Al, AlCu, or Ti / AlCu.

[0012] Each sub-pixel 10 has a lower electrode 131 and an upper electrode 153. In the example shown in Figure 1, the upper electrode 153 of multiple sub-pixels 10 is provided in common for all multiple sub-pixels 10. However, the upper electrode 153 of multiple sub-pixels 10 may be provided individually for each multiple sub-pixel 10. In such cases, the individual upper electrode 153 is electrically connected to a reflective member 121 or driving element located below it, and the lower electrode 131 of multiple sub-pixels 10 may be provided in common for all multiple sub-pixels 10.

[0013] The reflective members 121 of the multiple subpixels 10 may be arranged on the substrate 100. The lower electrodes 131 of the multiple subpixels 10 may be driven by a driving element such as a transistor 102 arranged on the substrate 100. The substrate 100 may include, for example, a semiconductor substrate 101 on which multiple transistors 102 are arranged, interlayer insulating films 115, 116, vias 111, 113, and a wiring layer (wiring pattern) 112.

[0014] In each sub-pixel 10, as illustrated in Figure 1, the reflective member 121 and the lower electrode 131 positioned thereon may be electrically connected, for example, via a barrier metal 140. Alternatively, the reflective member 121 may be electrically insulated from the lower electrode 131 and a fixed potential may be applied to the reflective member 121. The barrier metal 140 may be composed of, for example, a multilayer film of Ti, TiN, or Ti / TiN.

[0015] An insulating film 141 is placed between the reflective member 121 and the lower electrode 131. The insulating film 141 can be placed not only between the reflective member 121 and the lower electrode 131, but also between adjacent reflective members 121. The insulating film 141 is placed in each subpixel 10 to define the optical distance between the reflective member 121 and the lower electrode 131, and can function as an optical adjustment film for emitting light of a specific wavelength band from the subpixel 10. More specifically, in a first subpixel 11 which may be configured as a blue subpixel, the optical distance between the first reflective member 121a and the first lower electrode 131a is determined so that blue light is emitted from the first subpixel 11. In a second subpixel 12 which may be configured as a green subpixel, the optical distance between the second reflective member 121b and the second lower electrode 131b is determined so that green light is emitted from the second subpixel 12. In the third sub-pixel 13, which may be configured as a red sub-pixel, the optical distance between the third reflective member 121c and the third lower electrode 131c is determined so that red light is emitted from the third sub-pixel 13.

[0016] In this embodiment, the optical distance between the reflective member 121 and the lower electrode 131 is adjusted for each color by varying the effective refractive index of the insulating film 141 for each color. On the other hand, the distances between the first reflective member 121a and the first lower electrode 131a, the distance between the second reflective member 121b and the second lower electrode 131b, and the distance between the third reflective member 121c and the third lower electrode 131c are equal to each other with an accuracy of 20 nm or less, 10 nm or less, 5 nm or less, or 1 nm or less. In other words, the distances between the first reflective member 121a and the first lower electrode 131a, the distance between the second reflective member 121b and the second lower electrode 131b, and the distance between the third reflective member 121c and the third lower electrode 131c are substantially equal. Here, the distance refers to the geometric distance. Such a configuration contributes to the flattening of the layer positioned above the multiple lower electrodes 131. The distance between the first reflective member 121a and the first lower electrode 131a, the distance between the second reflective member 121b and the second lower electrode 131b, and the distance between the third reflective member 121c and the third lower electrode 131c may be, for example, in the range of 70 nm or more and 200 nm or less, preferably in the range of 100 nm or more and 150 nm or less.

[0017] The effective refractive index can be adjusted by subwavelength structures. A subwavelength structure is a structure having a period smaller than the wavelength of light (here, the light generated by each subpixel 10). In one aspect, the insulating film 141 has a first subwavelength structure SWS1 positioned between the first reflective member 121a and the first lower electrode 131a, and a second subwavelength structure SWS2 positioned between the second reflective member 121b and the second lower electrode 131b. In other aspects, the insulating film 141 further has a third subwavelength structure SWS3 positioned between the third reflective member 121c and the third lower electrode 131c. The first subwavelength structure SWS1 and the second subwavelength structure SWS2 have different effective refractive indices. Also, the first subwavelength structure SWS1, the second subwavelength structure SWS2, and the third subwavelength structure SWS3 have different effective refractive indices. The insulating film 141 may be composed of a material that transmits light in the visible light band. The insulating film 141 can be formed by an imprint process, as will be described in detail later.

[0018] The first subwavelength structure SWS1, the second subwavelength structure SWS2, and the third subwavelength structure SWS3 may include a plurality of pores H provided in the insulating film 141. The density of the plurality of pores H in the first subwavelength structure SWS1, the density of the plurality of pores H in the second subwavelength structure SWS2, and the density of the plurality of pores H in the third subwavelength structure SWS3 may be different from each other. This makes it possible to make the effective refractive indices of the first subwavelength structure SWS1, the second subwavelength structure SWS2, and the third subwavelength structure SWS3 different from each other.

[0019] An organic compound layer 152 is placed between the lower electrode 131 and the upper electrode 153. The organic compound layer 152 may be placed so as to cover multiple lower electrodes 131 and insulating film 151. The organic compound layer 152 may include, for example, a hole injection layer, a hole transport layer, an electron blocking layer, an emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, etc. A planarization film 154 may be placed on the upper electrode 153. However, if the upper surface of the upper electrode 153 is sufficiently flat, the planarization film 154 is not necessary. One or more sealing films may be placed on the planarization film 154. In one example, a first sealing film 155, a second sealing film 156, and a third sealing film 157 may be placed on the planarization film 154. The first sealing film 155 is, for example, silicon nitride. The second sealing film 156 is, for example, an aluminum oxide film. The third sealing film is, for example, silicon nitride. A color filter array and / or a microlens array may be placed on top of these sealing films.

[0020] Figure 2 schematically shows an example configuration of an imprint apparatus NIL that can be used to form an insulating film 141. The imprint apparatus NIL is a device that transfers the pattern of a mold M onto a curable composition IM on a substrate S. The curable composition IM is a composition that hardens when curing energy is applied (sometimes called an uncured resin). The curing energy can be electromagnetic waves, heat, etc. Electromagnetic waves include, for example, infrared light, visible light, ultraviolet light, etc., with wavelengths selected from the range of 10 nm to 1 mm. The curable composition IM may also be understood as a composition that hardens by light irradiation or heating. Among these, a photocurable composition that hardens by light contains at least a polymerizable compound and a photopolymerization initiator, and may optionally contain a non-polymerizable compound or a solvent. The non-polymerizable compound is at least one selected from the group of sensitizers, hydrogen donors, internal release agents, surfactants, antioxidants, polymer components, etc. The curable composition IM can be applied to the substrate in a film-like manner by a spin coater or a slit coater. The curable composition IM may be applied to the substrate by a liquid spray head in the form of droplets, islands formed by multiple connected droplets, or as a film. The viscosity of the curable composition IM (viscosity at 25°C) is, for example, 1 mPa·s or more and 100 mPa·s or less.

[0021] The imprint apparatus NIL may include a substrate stage SS including a substrate chuck SC for holding a substrate S, and a substrate drive mechanism SSD for driving the substrate stage SS. The imprint apparatus NIL may also include a mold drive mechanism MD for holding and driving a mold M. The substrate drive mechanism SD and the mold drive mechanism MD constitute a relative drive mechanism that drives at least one of the substrate SD and the mold MD so that the relative position of the substrate S and the mold M is adjusted. The adjustment of the relative position by the relative drive mechanism includes driving for contact of the mold M with the curable composition IM on the substrate S, and for separation of the mold IM from the cured product of the curable composition IM. The adjustment of the relative position by the relative drive mechanism also includes alignment of the substrate S (shot area) and the mold M (pattern area PR). The substrate drive mechanism SSD may be configured to drive the substrate S around a plurality of axes (e.g., three axes: X, Y, and θZ; preferably six axes: X, Y, Z, θX, θY, and θZ). The imprint apparatus NIL may include a mold deformation mechanism DM for deforming the two-dimensional shape of the pattern region PR of the mold M. The mold deformation mechanism DM can deform the pattern region PR of the mold M by, for example, applying force to the side of the mold M. The mold drive mechanism MD may be configured to drive the mold M along multiple axes (e.g., three axes: Z-axis, θX-axis, θY-axis; preferably six axes: X-axis, Y-axis, Z-axis, θX-axis, θY-axis, θZ-axis). The imprint apparatus NIL may also include a pressure controller CPC that controls the three-dimensional shape of the pattern region PR of the mold M by adjusting the pressure in a sealed space SP formed on the back of the mold M. By adjusting the pressure in the sealed space SP, the pressure controller CPC can deform the pattern region PR of the mold M into a downward convex shape or flatten it.

[0022] The imprint apparatus NIL may include one or more alignment scopes AS for measuring the alignment error between the shot area of ​​the substrate S and the pattern area PR of the mold M. The imprint apparatus NIL may include a curing unit CU for curing the curable composition IM by irradiating the curable composition IM with curing energy through the mold M to form a cured film. The imprint apparatus NIL may include a dispenser DP for applying or placing the curable composition IM onto the substrate S. The imprint apparatus NIL may include an off-axis scope OAS for detecting the position of alignment marks on the substrate S. The imprint apparatus NIL may include a control unit CNT for controlling each component of the imprint apparatus NIL. The control unit CNT may be an information processing device that can be composed of, for example, a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), a computer with a program installed, or a combination of all or part thereof.

[0023] The manufacturing method of the light-emitting device 1 will be described below as an example. First, the manufacturing method of the substrate 100 will be described with reference to Figure 1. First, multiple elements such as transistors 102, which are electrically isolated from each other by element isolation 103, may be formed on the semiconductor substrate 101. Next, interlayer insulating films 115, 116, vias 111, 113, wiring layers 112, etc., are formed. Next, multiple reflective members 121, including a first reflective member 121a, a second reflective member 121b, and a third reflective member 121c, may be formed on the substrate 100. In addition, a barrier metal 140 may be formed to cover the peripheral portion of each reflective member 121.

[0024] The following describes the process of forming the insulating layer 141 and the lower electrode 131 with reference to Figures 3 to 9. First, as schematically shown in Figure 3, in the imprint apparatus NIL, the process of placing the curable composition IM by the dispenser DP so as to cover the substrate 100, the reflective member 121, and the barrier metal 140 is carried out.

[0025] Next, as schematically shown in Figure 4, the process of bringing the pattern region PR of the mold M into contact with the curable composition IM, which is arranged to cover the substrate 100, the reflective member 121, and the barrier metal 140, is carried out in the imprint apparatus NIL. The pattern region PR of the mold M may have a first pattern P1, a second pattern P2, and a third pattern P3 for forming a first subwavelength structure SWS1, a second subwavelength structure SWS2, and a third subwavelength structure SWS3, respectively.

[0026] Next, as schematically shown in Figure 5, a step is performed to cure the curable composition IM by irradiation with curing energy from the curing section CU while the curable composition IM and mold M are in contact. This forms an insulating film 141 made of the cured product of the curable composition IM. Next, as schematically shown in Figure 6, a step is performed to separate the mold M from the insulating film 141. In this state, the insulating film 141 may include portions located between the bottom surfaces of the multiple holes H of the first subwavelength structure SWS1 and the first reflective member 121a, and portions located between the bottom surfaces of the multiple holes H of the second subwavelength structure SWS2 and the second reflective member 121b. The insulating film 141 may also include portions located between the bottom surfaces of the multiple holes H of the third subwavelength structure SWS3 and the third reflective member 121c. This may be due to the imprint process which avoids collision between the mold M and the reflective member 121.

[0027] As schematically shown in Figure 9, the insulating film 141 may be exposed through multiple holes H by etching the multiple holes H that constitute the first subwavelength structure SWS1, the second subwavelength structure SWS2, and the third subwavelength structure SWS3. In other words, the multiple holes H of the first subwavelength structure SWS1 may extend to the upper surface of the first reflective member 121a. Similarly, the multiple holes H of the second subwavelength structure SWS2 may extend to the upper surface of the second reflective member 121b. Furthermore, the multiple holes H of the third subwavelength structure SWS3 may extend to the upper surface of the third reflective member 121c.

[0028] Next, as schematically shown in Figure 7, a step (photolithography step and etching step) may be performed to form a contact hole CH for electrically connecting the reflective member 121 and the lower electrode 131. This step is unnecessary if the reflective member 121 and the lower electrode 131 are not to be electrically connected. Alternatively, instead of forming the contact hole CH, a pattern for forming the contact hole CH may be provided on the mold M. In this case, the contact hole CH can be formed together with the first subwavelength structure SWS1, the second subwavelength structure SWS2, and the third subwavelength structure SWS3. However, in this case, after the step of separating the mold M from the insulating film 141, a step may be performed to expose the barrier metal 140 in the contact hole CH by etching the insulating film 141 through the contact hole CH. At this time, the insulating film 141 is etched through the multiple holes H that constitute the first subwavelength structure SWS1, the second subwavelength structure SWS2, and the third subwavelength structure SWS3, and the lower member 121 may be exposed in these multiple holes.

[0029] Next, as schematically shown in Figure 8, a step may be performed to form the lower electrode 131 on the reflective member 121 via the insulating film 141. In one view, this step may form the first lower electrode 131a and the second lower electrode 131b on the first reflective member 121a and the second reflective member 121b, respectively, via the insulating film 141. In another view, this step may form the first lower electrode 131a, the second lower electrode 131b, and the third lower electrode 131c on the first reflective member 121a, the second reflective member 121b, and the third reflective member 121c, respectively, via the insulating film 141. The conditions for forming the lower electrode 131 may be determined such that the lower electrode 131 forming material does not fill the multiple pores H that constitute the first subwavelength structure SWS1, the second subwavelength structure SWS2, and the third subwavelength structure SWS3. In this case, a state is formed in which gas is present in the multiple pores H that constitute the first subwavelength structure SWS1, the second subwavelength structure SWS2, and the third subwavelength structure SWS3. Alternatively, before forming the lower electrode 131, a sealing process may be performed to block the entrances (upper parts) of the multiple pores H that constitute the first subwavelength structure SWS1, the second subwavelength structure SWS2, and the third subwavelength structure SWS3.

[0030] Alternatively, before forming the lower electrode 131, insulating material 161 may be filled into the multiple pores H constituting the first subwavelength structure SWS1, the second subwavelength structure SWS2, and the third subwavelength structure SWS3, as schematically shown in Figure 10. The refractive index of the insulating material 161 may be higher or lower than that of the insulating layer 141. After filling the multiple pores H with insulating material 161, a heat treatment may be performed to heat the structure including the insulating layer 141 and the insulating material 161. This allows the insulating material 161 filled into the multiple pores H to diffuse.

[0031] In the process shown in Figure 6, namely the process of separating the mold M from the insulating film 141, a mold release agent film 160 may remain, as schematically shown in Figure 11. In this case, the subsequent process may be carried out after removing the mold release agent film 160, or the subsequent process may be carried out without removing the mold release agent film 160. Examples of mold release agents include silicon-based mold release agents, fluorine-based mold release agents, polyethylene-based mold release agents, polypropylene-based mold release agents, paraffin-based mold release agents, montan-based mold release agents, and carnauba-based mold release agents. Among these, fluorine-based mold release agents are particularly preferred. When the mold release agent is left in place, the adhesion with the lower electrode formed in a subsequent process may be improved. On the other hand, when using a fluorine-based mold release agent, it is preferable to reduce the amount of mold release agent so as not to affect the organic layer of the OLED. Specifically, 0.01 g / cm³ 3 More than 1g / cm 3 The following is acceptable: The amount of fluorine atoms may be between 0.01 atomic% and 1 atomic%.

[0032] The steps of placing a curable composition IM on a substrate 100, contacting a mold M with the curable composition IM, curing the curable composition M, and separating the mold M from the cured product of the curable composition M may be called an imprint process. If the thickness of the insulating layer 141 formed in one imprint process does not meet the target specifications, the imprint process may be carried out at least twice. The insulating film 141 thus formed includes a first layer 141a and a second layer 141b, as schematically shown in Figure 13. The first subwavelength structure SWS1 may have a portion located in the first layer 141a and a portion located in the second layer 141b. The second subwavelength structure SWS2 may have a portion located in the first layer 141a and a portion located in the second layer 141b. The third subwavelength structure SWS3 may have a portion located in the first layer 141a and a portion located in the second layer 141b. Furthermore, since the subwavelength structure has a period smaller than the wavelength of light (in this case, the light generated by each subpixel 10), high alignment accuracy is not required between the first layer 141a and the second layer 141b. The insulating layer 141 or the subwavelength structure may each include three or more layers formed by an imprint process.

[0033] The following describes, with reference to Figure 1, the process of forming the structure on the lower electrode 131. An organic compound layer 152 is placed on the lower electrode 131. The organic compound layer 152 may include, for example, a hole injection layer, a hole transport layer, an electron blocking layer, an emissive layer, a hole blocking layer, an electron transport layer, an electron injection layer, etc. Next, an upper electrode 153 is formed, and a planarization film 154 is formed thereon if necessary, and a sealing film (e.g., 155, 156, 157) may be formed thereafter. A color filter array and / or a microlens array may be placed on the sealing film.

[0034] Figure 12 is a schematic plan view showing a portion of the pattern region PR of the mold M. As described above, the pattern region PR may have a first pattern P1, a second pattern P2, and a third pattern P3 for forming a first subwavelength structure SWS1, a second subwavelength structure SWS2, and a third subwavelength structure SWS3, respectively. Each of the first pattern P1, second pattern P2, and third pattern P3 may have a plurality of protrusions PP. The plurality of protrusions PP of the first pattern P1 are a plurality of features for forming a plurality of holes H of the first subwavelength structure SWS1. The plurality of protrusions PP of the second pattern P2 are a plurality of features for forming a plurality of holes H of the second subwavelength structure SWS2. The plurality of protrusions PP of the third pattern P3 are a plurality of features for forming a plurality of holes H of the third subwavelength structure SWS3.

[0035] In one example, the first sub-pixel 11 is a sub-pixel that generates blue light, and a plurality of protrusions PP of the first pattern P1 for forming the first subwavelength structure SWS1 may be arranged to constitute a period pB. The period pB may be, for example, in the range of 23 nm or more to 440 nm, and preferably in the range of 23 nm or more to 150 nm. Each protrusion PP may have, for example, a cylindrical shape, and its diameter may be, for example, in the range of 10 nm or more to 440 nm, and preferably in the range of 12 nm or more to 140 nm.

[0036] In one example, the second sub-pixel 12 is a sub-pixel that generates green light, and the multiple protrusions PP of the second pattern P2 for forming the second subwavelength structure SWS2 may be arranged to constitute a period pG. The period pG may be, for example, in the range of 27 nm or more to 530 nm, and preferably in the range of 27 nm or more to 177 nm. Each protrusion PP may have, for example, a cylindrical shape, and its diameter may be, for example, in the range of 10 nm or more to 520 nm, and preferably in the range of 14 nm or more to 167 nm.

[0037] In one example, the third sub-pixel 13 is a sub-pixel that generates red light, and the multiple protrusions PP of the third pattern P3 for forming the third subwavelength structure SWS3 may be arranged to constitute a period pR. The period pR may be, for example, in the range of 32 nm or more to 630 nm, and preferably in the range of 32 nm or more to 210 nm. Each protrusion PP may have, for example, a cylindrical shape, and its diameter may be, for example, in the range of 10 nm or more to 620 nm, and preferably in the range of 16 nm or more to 200 nm.

[0038] The multiple protrusions PP of the first pattern P1, the second pattern P2, and the third pattern P3 do not necessarily have periodicity. Each of the protrusions PP of the first pattern P1, the second pattern P2, and the third pattern P3 may have a columnar shape other than a cylindrical shape, such as an elliptical columnar shape or a rectangular columnar shape.

[0039] Incidentally, the mold M may deteriorate through contact with the curable composition IM and separation of the curable composition IM from the cured product. Therefore, the manufacturing method of the light-emitting device 1 may further include a replication step in which the mold M is formed by replicating the master structure by an imprint process. The replication step will be illustrated with reference to Figure 14.

[0040] First, as schematically shown in Figure 14(a), a step may be carried out in which a master mold MM as a master structure and a blank mold BM are placed opposite each other via a second curable composition IM'. The second curable composition IM' may have the same composition as the aforementioned curable composition IM, or it may have a different composition. Next, as schematically shown in Figure 14(b), the second curable composition IM' is cured. This may be carried out in which a replica structure RS is formed, consisting of a cured film of the second curable composition IM' on which the shape of the master mold MM has been transferred. Here, the second curable composition IM' can be cured by applying curing energy CE such as light energy and / or thermal energy to the second curable composition IM'. Next, as schematically shown in Figure 14(c), a step may be carried out in which a replica mold RM that can be used as mold M is obtained by separating the master mold MM from the replica structure RS. The blank mold BM is a member that supports the replica structure RS.

[0041] The method for manufacturing the light-emitting device 1 may further include a preparation step for preparing a master structure. A master mold MM, as an example of a master structure, can be formed, for example, by processing a quartz material using a photolithography process or the like.

[0042] The details of each component are explained below with illustrative examples.

[0043] Configuration of subpixels (organic light-emitting elements) The organic light-emitting element as a sub-pixel 10 may be configured with the lower electrode 131 as the anode and the upper electrode 153 as the cathode. A protective layer, a color filter, a microlens, etc., may be provided on the cathode. If a color filter is provided, a planarization layer may be provided between the protective layer and the color filter. The planarization layer can be made of acrylic resin or the like. The same applies when a planarization layer is provided between the color filter and the microlens.

[0044] The semiconductor substrate 101 may be a non-semiconductor substrate such as quartz, glass, silicon wafer, resin, or metal. In this case, multiple thin-film transistors may be formed on the non-semiconductor substrate. An insulating layer may be formed to cover the multiple thin-film transistors, a wiring pattern may be placed on the insulating layer, and another insulating layer may be placed on the wiring pattern. Contact holes may be formed in these insulating layers, and plugs may be filled into the contact holes. The insulating layers may be formed from, for example, a resin such as polyimide, silicon oxide, or silicon nitride.

[0045] electrode Of the lower and upper electrodes, the electrode with the higher potential is the anode, and the other is the cathode. Alternatively, the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0046] Materials with a high work function may be selected as the anode components. For example, elemental metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, or mixtures containing these, or alloys combining them, as well as metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and zinc indium oxide can be used. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used as anode components.

[0047] These electrode materials may be used individually or in combination of two or more types. Furthermore, the anode may consist of a single layer or multiple layers.

[0048] The reflective material can be, for example, chromium, aluminum, silver, titanium, copper, tungsten, molybdenum, or alloys thereof, or laminates thereof. It is also possible to use the above materials to function as a reflective film without serving as an electrode. Furthermore, when using a transparent electrode, an oxide transparent conductive layer such as indium tin oxide (ITO) or indium zinc oxide can be used, but is not limited to these. Photolithography can be used to form the electrodes.

[0049] On the other hand, materials with a low work function may be selected as the constituent material of the cathode. Examples include alkali metals such as lithium, alkaline earth metals such as calcium, and elemental metals or mixtures containing aluminum, titanium, manganese, silver, lead, and chromium. Alternatively, alloys combining these elemental metals can also be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver can be used. Metal oxides such as indium tin oxide (ITO) can also be used. These electrode materials may be used individually or in combination of two or more. The cathode may also have a single-layer or multi-layer structure. Silver may be used as the cathode, and a silver alloy may be used to reduce silver aggregation. The ratio of the alloy does not matter as long as silver aggregation is reduced. For example, the ratio of silver to other metals may be 1:1, 3:1, etc.

[0050] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but using a DC or AC sputtering method can result in good coverage of the formed film and a lower cathode resistance.

[0051] Even when the first electrode is the cathode and the second electrode is the anode, a wide color gamut and low-voltage driving are possible by forming an electron-transporting material, a charge transport layer, and a light-emitting layer on the charge transport layer.

[0052] organic compound layer The organic compound layer may be formed as a single layer or as multiple layers. If there are multiple layers, they may be called a hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc., depending on their function. The organic compound layer is mainly composed of organic compounds, but may also contain inorganic atoms or inorganic compounds. The organic compound layer may contain, for example, copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc. The organic compound layer may be disposed between the first electrode and the second electrode, or it may be disposed in contact with the first electrode and the second electrode.

[0053] protective layer A protective layer may be provided on the cathode. For example, by bonding a glass with a desiccant to the cathode, the intrusion of moisture into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation layer such as silicon nitride may be provided on the cathode to reduce the intrusion of moisture into the organic compound layer. For example, after forming the cathode, it may be transported to another chamber without breaking the vacuum, and a 2 μm thick silicon nitride may be formed by the CVD method to serve as the protective layer. After forming the protective layer using the CVD method, a protective layer using the atomic layer deposition (ALD) method may be provided. The material of the protective layer formed by the ALD method is not limited, but may be silicon nitride, silicon oxide, aluminum oxide, etc. Silicon nitride may be further formed on the protective layer formed by the ALD method using the CVD method. The protective layer formed by the ALD method may have a smaller film thickness than the protective layer formed by the CVD method. Specifically, the film thickness of the protective layer formed by the ALD method may be 50% or less, or even 10% or less, of the film thickness of the protective layer formed by the CVD method.

[0054] Color filter A color filter may be provided on the protective layer. For example, a color filter that takes into account the size of the organic light-emitting element may be provided on a separate substrate, and the substrate on which the color filter is formed and the substrate on which the organic light-emitting element is provided may be bonded together. Alternatively, for example, the color filter may be patterned on the protective layer described above using photolithography technology. The color filter may be made of polymer.

[0055] planarization layer A planarization layer may be placed between the color filter and the protective layer. The planarization layer is provided to reduce the unevenness of the layer below it. It may also be called a material resin layer without limiting its purpose. The planarization layer may be composed of an organic compound, which may be low molecular weight or high molecular weight. High molecular weight organic compounds may be used in the planarization layer to reduce unevenness.

[0056] Planarization layers may be provided above and below the color filter. In this case, the constituent materials of each planarization layer may be the same or different. Specifically, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, urea resin, etc., can be used as materials for the planarization layer.

[0057] Microlens An organic light-emitting device may have optical components such as microlenses on its light-emitting side. Microlenses may be made of acrylic resin, epoxy resin, or the like. Microlenses may be used to increase the amount of light extracted from the organic light-emitting device or to control the direction of the extracted light. Microlenses may have a hemispherical shape. If they have a hemispherical shape, among the tangents tangent to the hemisphere, there is a tangent parallel to the insulating layer, and the point of contact between that tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be similarly determined in any cross-sectional view. That is, among the tangents tangent to the semicircle of the microlens in the cross-sectional view, there is a tangent parallel to the insulating layer, and the point of contact between that tangent and the semicircle is the vertex of the microlens.

[0058] Furthermore, the midpoint of a microlens can also be defined. In the cross-section of a microlens, a line segment can be imagined from the point where one arc ends to the point where another arc ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross-section used to determine the vertices and midpoints may be a cross-section perpendicular to the insulating layer.

[0059] A microlens has a first surface with a convex portion and a second surface opposite to the first surface. The second surface may be positioned closer to the functional layer (light-emitting layer) than the first surface. To adopt such a configuration, it is necessary to form the microlens on a light-emitting device. If the functional layer is an organic layer, high-temperature processes may be avoided in the manufacturing process of the microlens. Also, when adopting a configuration in which the second surface is positioned closer to the functional layer than the first surface, the glass transition temperatures of all organic compounds constituting the organic layer may be 100°C or higher, and for example, 130°C or higher is suitable.

[0060] Opposing board A counter substrate may be placed on the planarization layer. The counter substrate is called a counter substrate because it is provided in a position corresponding to the aforementioned substrate. The constituent material of the counter substrate may be the same as that of the aforementioned substrate. The counter substrate may be a second substrate if the aforementioned substrate is referred to as the first substrate.

[0061] organic layer The organic compound layers constituting the organic light-emitting element according to the embodiment of this disclosure (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) may be formed by the following methods.

[0062] The organic compound layer constituting the organic light-emitting element according to the embodiment of this disclosure can be formed using a dry process such as vacuum deposition, ionization deposition, sputtering, or plasma deposition. Alternatively, instead of a dry process, a wet process can be used in which the layer is formed by dissolving the compound in a suitable solvent and applying a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).

[0063] When layers are formed using methods such as vacuum deposition or solution coating, crystallization is less likely to occur, resulting in excellent stability over time. Furthermore, when forming films using coating methods, it is possible to combine the film with an appropriate binder resin.

[0064] Examples of the binder resins mentioned above include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, and urea resin.

[0065] Furthermore, these binder resins may be used individually as homopolymers or copolymers, or as a mixture of two or more types. Additionally, known additives such as plasticizers, antioxidants, and UV absorbers may be used in combination as needed.

[0066] Pixel circuit The light-emitting device may have a pixel circuit connected to a light-emitting element. The pixel circuit may be an active-matrix type that independently controls the light emission of the first light-emitting element and the second light-emitting element. The active-matrix type circuit may be voltage-programmed or current-programmed. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light-emitting element, a transistor that controls the light emission brightness of the light-emitting element, a transistor that controls the light emission timing, a capacitor that holds the gate voltage of the transistor that controls the light emission brightness, and a transistor for connecting to GND without going through the light-emitting element.

[0067] The light-emitting device has a display area and a peripheral area arranged around the display area. The display area has a pixel circuit, and the peripheral area has a display control circuit. The mobility of the transistors constituting the pixel circuit may be smaller than the mobility of the transistors constituting the display control circuit.

[0068] The slope of the current-voltage characteristics of the transistors constituting the pixel circuit can be smaller than the slope of the current-voltage characteristics of the transistors constituting the display control circuit. The slope of the current-voltage characteristics can be measured using the so-called Vg-Ig characteristic.

[0069] The transistors that make up the pixel circuit are those connected to the light-emitting elements, such as the first light-emitting element.

[0070] pixels The organic light-emitting device has multiple pixels. Each pixel has subpixels that emit light of a different color from the others. The subpixels may each have, for example, RGB light-emitting colors.

[0071] A pixel emits light from a region also called the pixel aperture. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0072] The spacing between subpixels may be 10 μm or less, specifically 8 μm, 7.4 μm, or 6.4 μm.

[0073] Pixels can take on known arrangements in a plan view. For example, they may be in a stripe arrangement, delta arrangement, pentile arrangement, or Bayer arrangement. The shape of subpixels in a plan view may be any known shape. For example, rectangles, rhombuses or other quadrilaterals, hexagons, etc. Of course, even if it is not a precise shape, if it is close to a rectangle, it is included in the category of rectangles. The shape of subpixels and the pixel arrangement can be used in combination.

[0074] Applications of the organic light-emitting element according to the embodiment of this disclosure The organic light-emitting element according to the embodiment of this disclosure can be used as a component of a display device or lighting device. Other applications include exposure light sources for electrophotographic image forming apparatuses, backlights for liquid crystal display devices, and light-emitting devices having a color filter in a white light source.

[0075] The display device may also be an image information processing device that has an image input unit for receiving image information from an area CCD, linear CCD, memory card, etc., an information processing unit for processing the input information, and displays the input image on the display unit.

[0076] Furthermore, the display unit of the imaging device or inkjet printer may have a touch panel function. The driving method for this touch panel function may be infrared, capacitive, resistive, or electromagnetic induction, and is not particularly limited. The display device may also be used as the display unit of a multifunction printer.

[0077] Next, we will provide further explanation with reference to the drawings. Figure 15(a) shows an example of a pixel. The pixel has multiple subpixels 810 (pixels 150). The subpixels are divided into 810R, 810G, and 810B based on their light emission. The emission color may be distinguished by the wavelength emitted from the light-emitting layer, or the light emitted from the subpixel may be selectively transmitted or color-converted by a color filter or the like. Each subpixel has a reflective electrode 802 which is the first electrode, an insulating layer 803 covering the edge of the reflective electrode 802, an organic compound layer 804 covering the first electrode and the insulating layer, a transparent electrode 805 which is the second electrode, a protective layer 806, and a color filter 807 on an interlayer insulating layer 801.

[0078] The interlayer insulating layer 801 may have transistors or capacitive elements placed in the layer below or inside it. The transistor and the first electrode may be electrically connected via a contact hole or the like (not shown).

[0079] The insulating layer 803 may also be called a bank or pixel isolation layer. The insulating layer 803 covers the edge of the first electrode and is arranged to surround the first electrode. The portion of the first electrode not covered by the insulating layer 803 is in contact with the organic compound layer 804 and becomes a light-emitting region.

[0080] The organic compound layer 804 includes a hole injection layer 841, a hole transport layer 842, a first light-emitting layer 843, a second light-emitting layer 844, and an electron transport layer 845.

[0081] The second electrode may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0082] The protective layer 806 reduces the penetration of moisture into the organic compound layer. Although the protective layer is shown as a single layer, it may consist of multiple layers. Each layer may contain an inorganic compound layer and an organic compound layer.

[0083] The color filter 807 is classified into 807R, 807G, and 807B depending on its color. The color filter may be formed on a planarization film (not shown). A resin protective layer (not shown) may also be placed on the color filter. The color filter may also be formed on a protective layer 806. Furthermore, the color filter may be bonded to an opposing substrate, such as a glass substrate, after it has been placed on it.

[0084] Figure 15(b) shows a portion of the light-emitting device 1 configured as a display device 800. Figure 15(b) shows an organic light-emitting element 826 and a TFT 818 as an example of a transistor. A substrate 811 made of glass, silicon, or the like is provided, with an insulating layer 812 on top of it. An active element such as the TFT 818 is placed on the insulating layer, and the gate electrode 813, gate insulating film 814, and semiconductor layer 815 of the active element are arranged therein. The TFT 818 is also composed of a semiconductor layer 815, a drain electrode 816, and a source electrode 817. An insulating film 819 is provided on top of the TFT 818. The anode 821 and the source electrode 817 of the organic light-emitting element 826 are connected via a contact hole 820 provided in the insulating film.

[0085] The method of electrical connection between the electrodes (anode, cathode) in the organic light-emitting element 826 and the electrodes (source electrode, drain electrode) in the TFT is not limited to the configuration shown in Figure 15(b). In other words, it is sufficient for either the anode or cathode to be electrically connected to either the source electrode or the drain electrode of the TFT. TFT refers to a thin-film transistor.

[0086] In the display device 800 shown in Figure 15(b), the organic compound layer is depicted as a single layer, but the organic compound layer 822 may consist of multiple layers. A first protective layer 824 and a second protective layer 825 are provided on the cathode 823 to reduce the degradation of the organic light-emitting element.

[0087] In the display device 800 shown in Figure 15(b), a transistor is used as the switching element, but other switching elements may be used instead.

[0088] Furthermore, the transistor used in the display device 800 in Figure 15(b) is not limited to a transistor using a single-crystal silicon wafer, but may also be a thin-film transistor having an active layer on an insulating surface of the substrate. Examples of active layers include non-single-crystal silicon such as single-crystal silicon, amorphous silicon, and microcrystalline silicon, and non-single-crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Thin-film transistors are also called TFT elements.

[0089] The transistors included in the display device 800 in Figure 15(b) may be formed within a substrate such as a silicon substrate. Here, "formed within a substrate" means that the transistors are manufactured by processing the substrate itself, such as a silicon substrate. In other words, having transistors within a substrate can be seen as the substrate and transistors being formed as a single unit.

[0090] The organic light-emitting element according to this embodiment has its luminescence controlled by a TFT, which is an example of a switching element, and by providing multiple organic light-emitting elements on the surface, an image can be displayed according to the luminescence of each element. Here, the switching element according to this embodiment is not limited to a TFT, but may also be a transistor made of low-temperature polysilicon, or an active matrix driver formed on a substrate such as a silicon substrate. "On the substrate" can also be said to be "within the substrate". Whether to provide a transistor within the substrate or to use a TFT is selected depending on the size of the display area; for example, if the size is about 0.5 inches, the organic light-emitting element may be provided on a silicon substrate.

[0091] Figures 16(a) to 16(c) are schematic diagrams showing an example of an image forming apparatus using the light-emitting device 1 of this embodiment. The image forming apparatus 926 shown in Figure 16(a) includes a photoreceptor 927, an exposure light source 928, a developing unit 931, a charging unit 930, a transfer unit 932, a transport unit 933 (transport rollers in the configuration of Figure 16(a)), and a fuser 935.

[0092] Light 929 is irradiated from the exposure light source 928, and an electrostatic latent image is formed on the surface of the photoreceptor 927. The light-emitting device 1 can be applied to this exposure light source 928. The developing unit 931 contains toner or the like as a developer and can function as a developer that applies the developer to the exposed photoreceptor 927. The charging unit 930 charges the photoreceptor 927. The transfer unit 932 transfers the developed image to the recording medium 934. The transport unit 933 transports the recording medium 934. The recording medium 934 can be, for example, paper or film. The fuser unit 935 fixes the image formed on the recording medium.

[0093] Figures 16(b) and 16(c) are schematic diagrams showing how multiple light-emitting units 936 are arranged along the longitudinal direction on a long substrate in relation to the exposure light source 928. The light-emitting device 1 can be applied to these light-emitting units 936. That is, multiple pixels 150 arranged in the pixel array 110 are arranged along the longitudinal direction of the substrate. Direction 937 is parallel to the axis of the photoreceptor 927. This column direction is the same as the direction of the axis when the photoreceptor 927 rotates. This direction 937 can also be called the longitudinal axis direction of the photoreceptor 927.

[0094] Figure 16(b) shows a configuration in which the light-emitting units 936 are arranged along the long axis of the photoreceptor 927. Figure 16(c) is a modified example of the arrangement of the light-emitting units 936 shown in Figure 16(b), in which the light-emitting units 936 are arranged alternately in the column direction in the first and second columns. In the first and second columns, the light-emitting units 936 are arranged at different positions in the row direction. In the first column, multiple light-emitting units 936 are arranged at intervals, and in the second column, light-emitting units 936 are arranged at positions corresponding to the gaps between the light-emitting units 936 in the first column. Also, multiple light-emitting units 936 are arranged at intervals in the row direction. The arrangement of the light-emitting units 936 shown in Figure 16(c) can also be described as a grid arrangement, a houndstooth arrangement, or a checkerboard pattern.

[0095] Figure 17 is a schematic diagram showing an example of a display device using the light-emitting device 1 of this embodiment. The display device 1000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits FPCs 1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. Active elements such as transistors are arranged on the circuit board 1007. The battery 1008 does not need to be provided if the display device 1000 is not a portable device, and even if it is a portable device, it does not need to be provided in this position. The light-emitting device 1 can be applied to the display panel 1005. The pixels 150 arranged on the light-emitting device 1 that functions as the display panel 1005 are connected to and operate with active elements such as transistors arranged on the circuit board 1007.

[0096] The display device 1000 shown in Figure 17 may be used in the display unit of a photoelectric conversion device (also called an imaging device) which has an optical unit with multiple lenses and an image sensor that receives light passing through the optical unit and converts it into an electrical signal. The photoelectric conversion device may have a display unit that displays information acquired by the image sensor. The display unit may be an external display unit exposed to the outside of the photoelectric conversion device, or a display unit located inside the viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0097] Figure 18 is a schematic diagram showing an example of a photoelectric converter using the light-emitting device 1 of this embodiment. The photoelectric converter 1100 may have a viewfinder 1101, a rear display 1102, an operating unit 1103, and a housing 1104. The photoelectric converter 1100 may also be called an imaging device. The light-emitting device 1 of this embodiment can be applied to the display unit, which is the viewfinder 1101 or the rear display 1102. In this case, the pixel area of ​​the light-emitting device 1 may display not only the image to be captured, but also environmental information, imaging instructions, etc. Environmental information may include the intensity of ambient light, the direction of ambient light, the speed at which the subject is moving, and the possibility that the subject may be obscured by an obstacle.

[0098] Since the optimal timing for imaging is often very short, it is desirable to display information as quickly as possible. Therefore, a light-emitting device 1 in which pixels 150 containing light-emitting elements made of organic light-emitting materials such as organic EL elements are arranged in the pixel area may be used in the viewfinder 1101 or the rear display 1102. This is because organic light-emitting materials have a fast response speed. A light-emitting device 1 using organic light-emitting materials is more suitable than a liquid crystal display device for these devices where display speed is required.

[0099] The photoelectric converter 1100 has an optical section (not shown). The optical section has multiple lenses, and the light that passes through the optical section is imaged onto a photoelectric converter element (not shown) housed in a light-receiving housing 1104. The focus can be adjusted by adjusting the relative positions of the multiple lenses. This operation can also be performed automatically.

[0100] The light-emitting device 1 may be applied to the display unit of an electronic device. In that case, it may have both a display function and an operating function. Examples of portable terminals include mobile phones such as smartphones, tablets, and head-mounted displays.

[0101] Figure 19 is a schematic diagram showing an example of an electronic device using the light-emitting device 1 of this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type response unit. The operation unit 1202 may also be a biometric recognition unit that recognizes fingerprints to unlock or otherwise perform actions. A portable device having a communication unit can also be called a communication device. The light-emitting device 1 of this embodiment can be applied to the display unit 1201.

[0102] Figures 20(a) and (b) are schematic diagrams showing an example of a display device using the light-emitting device 1 of this embodiment. Figure 20(a) is a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The light-emitting device 1 of this embodiment can be applied to the display unit 1302. The display device 1300 may also have a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form shown in Figure 20(a). For example, the lower edge of the frame 1301 may also serve as the base 1303. Also, the frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0103] Figure 20(b) is a schematic diagram showing another example of a display device using the light-emitting device 1 of this embodiment. The display device 1310 in Figure 20(b) is configured to be foldable and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The light-emitting device 1 of this embodiment can be applied to the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 may be a single display device without seams. The first display unit 1311 and the second display unit 1312 can be separated by a bending point. The first display unit 1311 and the second display unit 1312 may each display different images, or they may display a single image together.

[0104] Figure 21 is a schematic diagram showing an example of a lighting device using the light-emitting device 1 of this embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light-emitting device 1 of this embodiment can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering of the light source. The light diffusion unit 1405 can effectively diffuse the light from the light source, such as for lighting up, and deliver light over a wide area. A cover may be provided on the outermost part if necessary. The lighting device 1400 may have both the optical film 1404 and the light diffusion unit 1405, or it may have only one of them.

[0105] The lighting device 1400 is, for example, a device for illuminating a room. The lighting device 1400 may emit white light, daylight white light, or any other color from blue to red. It may have a dimming circuit for adjusting the brightness of these colors. The lighting device 1400 may have a power supply circuit connected to the light-emitting device 1, which functions as a light source 1402. The power supply circuit is a circuit that converts AC voltage to DC voltage. White light has a color temperature of 4200K, and daylight white light has a color temperature of 5000K. The lighting device 1400 may also have a color filter. The lighting device 1400 may also have a heat dissipation section. The heat dissipation section releases heat from inside the device to the outside, and examples include metals with high specific heat, liquid silicon, etc.

[0106] Figure 22 is a schematic diagram of an automobile having a taillight, which is an example of a vehicle light fixture using the light-emitting device 1 of this embodiment. The automobile 1500 may have a taillight 1501, and the taillight 1501 may be illuminated when the brakes are applied or otherwise. The light-emitting device 1 of this embodiment may also be used as a headlight as a vehicle light fixture. The automobile is an example of a mobile body, and the mobile body may be a ship, drone, aircraft, railway vehicle, industrial robot, etc. The mobile body may have a body and a light fixture installed thereon. The light fixture may indicate the current position of the body.

[0107] The light-emitting device 1 of this embodiment can be applied to the tail lamp 1501. The tail lamp 1501 may have a protective member to protect the light-emitting device 1 that functions as a tail lamp 1501. The protective member can be made of any material as long as it has a reasonably high strength and is transparent, but it may be made of polycarbonate or the like. The protective member may also be made of polycarbonate mixed with a frangic acid derivative, an acrylonitrile derivative, or the like.

[0108] The automobile 1500 may have a body 1503 and windows 1502 attached thereto. The windows may be for checking the front and rear of the automobile, or they may be transparent displays such as head-up displays. The light-emitting device 1 of this embodiment may be used for such transparent displays. In this case, the constituent materials such as electrodes of the light-emitting device 1 are made of transparent materials.

[0109] Further application examples of the light-emitting device 1 of this embodiment will be described with reference to Figures 23(a) and (b). The light-emitting device 1 can be applied to systems that can be worn as wearable devices such as smart glasses, head-mounted displays (HMDs), and smart contact lenses. The imaging display device used in such application examples has an imaging device capable of photoelectric conversion of visible light and a light-emitting device capable of emitting visible light.

[0110] Figure 23(a) illustrates a pair of glasses 1600 (smart glasses) according to one application example. An imaging device 1602, such as a CMOS sensor or SPAD, is provided on the front surface of the lens 1601 of the glasses 1600. In addition, the light-emitting device 1 of this embodiment is provided on the back surface of the lens 1601.

[0111] The eyeglasses 1600 further include a control device 1603. The control device 1603 functions as a power supply that provides power to the imaging device 1602 and the light-emitting device 1 according to each embodiment. The control device 1603 also controls the operation of the imaging device 1602 and the light-emitting device 1. The lens 1601 has an optical system formed therein for focusing light onto the imaging device 1602.

[0112] Figure 23(b) illustrates a pair of glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612, which is equipped with an imaging device equivalent to an imaging device 1602 and a light-emitting device 1. The lens 1611 has an optical system formed to project the light emitted from the imaging device in the control device 1612 and the light-emitting device 1, and an image is projected onto the lens 1611. The control device 1612 functions as a power supply to supply power to the imaging device and the light-emitting device 1, and also controls the operation of the imaging device and the light-emitting device 1. The control device 1612 may have a gaze detection unit that detects the wearer's gaze. Gaze detection may use infrared light. The infrared light-emitting unit emits infrared light towards the eyeball of the user who is fixating on the displayed image. The imaging unit, which has a photodetector, detects the reflected light from the eyeball of the emitted infrared light, thereby obtaining an image of the eyeball. By having a reduction means that reduces the light from the infrared light-emitting unit to the display unit in planar view, the deterioration of image quality is reduced.

[0113] The user's gaze towards a displayed image is detected from an image of the eyeball obtained by imaging with infrared light. Any known method can be applied to gaze detection using an image of the eyeball. As an example, a gaze detection method based on the Purkinje image obtained by the reflection of the irradiated light from the cornea can be used.

[0114] More specifically, gaze detection processing is performed based on the pupil-corneal reflection method. Using the pupil-corneal reflection method, a gaze vector representing the orientation (rotation angle) of the eyeball is calculated based on the pupil image and Purkinje image contained in the captured image of the eyeball, thereby detecting the user's gaze.

[0115] The light-emitting device 1 according to the embodiment of this disclosure includes an imaging device having a light-receiving element, and may control the displayed image based on the user's line of sight information from the imaging device.

[0116] Specifically, the light-emitting device 1 determines a first field of view area that the user is fixated on, and a second field of view area other than the first field of view area, based on gaze information. The first and second field of view areas may be determined by the control device of the light-emitting device 1, or they may be determined by an external control device and received by the device. In the display area of ​​the light-emitting device 1, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0117] Furthermore, the display area has a first display area and a second display area different from the first display area, and based on gaze information, the area with higher priority is determined from the first display area and the second display area. The first display area and the second display area may be determined by the control device of the light-emitting device 1, or they may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of the areas other than the high-priority area. In other words, the resolution of the area with relatively lower priority may be lowered.

[0118] AI may be used to determine the first field of view area and high-priority areas. The AI ​​may be a model configured to estimate the angle of line of sight and the distance to the target object at the end of the line of sight from the image of the eye, using the image of the eye and the direction the eye was actually looking in that image as training data. The AI ​​program may be installed in the light-emitting device 1, the imaging device, or an external device. If installed in an external device, it will be transmitted to the light-emitting device 1 via communication.

[0119] When display control is based on visual detection, this can be applied to smart glasses that also have an imaging device for capturing images of the surrounding environment. The smart glasses can display the captured external information in real time.

[0120] This specification and drawings include the following disclosures: (Item 1) A light-emitting device having a plurality of sub-pixels having a lower electrode and an upper electrode, wherein the plurality of sub-pixels include a first sub-pixel and a second sub-pixel, the first sub-pixel having a first reflective member below a first lower electrode which is the lower electrode of the first sub-pixel, and the second sub-pixel having a second reflective member below a second lower electrode which is the lower electrode of the second sub-pixel, The insulating film is disposed below the lower electrodes of the plurality of sub-pixels so as to cover the first reflective member and the second reflective member, The insulating film has a first subwavelength structure disposed between the first reflective member and the first lower electrode, and a second subwavelength structure disposed between the second reflective member and the second lower electrode. The first subwavelength structure and the second subwavelength structure have mutually different effective refractive indices. A light-emitting device characterized by the following features. (Item 2) The insulating film is composed of a cured product of a curable composition. The light-emitting device according to item 1, characterized in that it is a light-emitting device. (Item 3) The distance between the first reflective member and the first lower electrode, and the distance between the second reflective member and the second lower electrode are equal to each other with an accuracy of 20 nm or less. A light-emitting device according to item 1 or 2, characterized by the features described above. (Item 4) The first subwavelength structure and the second subwavelength structure include a plurality of holes provided in the insulating film. The density of the plurality of pores in the first subwavelength structure is different from the density of the plurality of pores in the second subwavelength structure. A light-emitting device according to any one of items 1 to 3, characterized in that it is a light-emitting device. (Item 5) The insulating film includes a portion disposed between the bottom surface of the plurality of holes in the first subwavelength structure and the first reflecting member, and a portion disposed between the bottom surface of the plurality of holes in the second subwavelength structure and the second reflecting member. The light-emitting device according to item 4, characterized in that it is a light-emitting device. (Item 6) The plurality of holes in the first subwavelength structure extend to the upper surface of the first reflecting member, and the plurality of holes in the second subwavelength structure extend to the upper surface of the second reflecting member. The light-emitting device according to item 4, characterized in that it is a light-emitting device. (Item 7) Gas is present in the aforementioned plurality of holes. A light-emitting device according to any one of items 4 to 6, characterized in that it is a light-emitting device. (Item 8) The aforementioned multiple holes are filled with insulating material. A light-emitting device according to any one of items 4 to 6, characterized in that it is a light-emitting device. (Item 9) The refractive index of the insulating material is higher than that of the insulating film. The light-emitting device described in item 8, characterized by the features described above. (Item 10) The insulating film includes a first layer and a second layer, The first subwavelength structure has a portion located in the first layer and a portion located in the second layer, The second subwavelength structure has a portion located in the first layer and a portion located in the second layer. A light-emitting device according to any one of items 1 to 9, characterized in that it is a light-emitting device. (Item 11) The distance between the first reflective member and the first lower electrode, and the distance between the second reflective member and the second lower electrode, are within the range of 70 nm or more and 200 nm or less. The light-emitting device according to item 10, characterized in that it is a light-emitting device. (Item 12) The distance between the first reflective member and the first lower electrode, and the distance between the second reflective member and the second lower electrode, are within the range of 70 nm or more and 200 nm or less. A light-emitting device according to any one of items 1 to 9, characterized in that it is a light-emitting device. (Item 13) The plurality of sub-pixels further include a third sub-pixel, the third sub-pixel having a third reflective member below a third lower electrode which is the lower electrode of the third sub-pixel, The insulating film further comprises a third subwavelength structure disposed between the third reflective member and the third lower electrode. The first subwavelength structure, the second subwavelength structure, and the third subwavelength structure have mutually different effective refractive indices. A light-emitting device according to any one of items 1 to 12, characterized in that it is a light-emitting device. (Item 14) The distance between the first reflective member and the first lower electrode, the distance between the second reflective member and the second lower electrode, and the distance between the third reflective member and the third lower electrode are equal to each other with an accuracy of 20 nm or less. The light-emitting device according to item 13, characterized in that it is a light-emitting device. (Item 15) The system further comprises a release agent film disposed between the insulating film and the lower electrodes of the plurality of sub-pixels. A light-emitting device according to any one of items 1 to 14, characterized in that it is a light-emitting device. (Item 16) The device comprises a photoreceptor, an exposure light source for exposing the photoreceptor, a developer for applying a developer to the exposed photoreceptor, and a transfer unit for transferring the image developed in the developer to a recording medium. An image forming apparatus characterized in that the exposure light source has a light-emitting device as described in any one of items 1 to 15. (Item 17) A display device comprising a light-emitting device described in any one of items 1 to 15, and an active element connected to the light-emitting device. (Item 18) It comprises an optical unit having multiple lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image. The photoelectric conversion device is characterized in that the display unit displays an image captured by the image sensor and has a light-emitting device as described in any one of items 1 to 15. (Item 19) It comprises a housing on which a display unit is provided, and a communication unit provided in the housing for communicating with the outside, The display unit is characterized by having a light-emitting device as described in any one of items 1 to 15. (Item 20) A lighting device comprising a light source and at least one of a light diffusing section and an optical film, The lighting device is characterized in that the light source has a light-emitting device as described in any one of items 1 to 15. (Item 21) A mobile body having an aircraft body and a lighting fixture provided on the aircraft body, The aforementioned luminaire is a mobile body characterized by having a light-emitting device as described in any one of items 1 to 15. (Item 22) A wearable device having a display device for displaying images, The wearable device is characterized in that the display device has a light-emitting device as described in any one of items 1 to 15. (Item 23) A step of forming a first reflective member for a first sub-pixel and a second reflective member for a second sub-pixel on a substrate, A step of placing a curable composition on the substrate, A step of bringing the mold into contact with the curable composition, A step of curing the curable composition while it is in contact with the mold to form an insulating film made of the cured product of the curable composition, A step of separating the mold from the insulating film, The process includes forming a first lower electrode and a second lower electrode, which are respectively placed on the first reflective member and the second reflective member via the insulating film, The insulating film has a first subwavelength structure disposed between the first reflective member and the first lower electrode, and a second subwavelength structure disposed between the second reflective member and the second lower electrode. The first subwavelength structure and the second subwavelength structure have mutually different effective refractive indices. A method for manufacturing a light-emitting device, characterized by the above. (Item 24) The distance between the first reflective member and the first lower electrode, and the distance between the second reflective member and the second lower electrode are equal to each other with an accuracy of 20 nm or less. A method for manufacturing a light-emitting device as described in item 23, characterized by the features described herein. (Item 25) The first subwavelength structure and the second subwavelength structure include a plurality of holes provided in the insulating film. The density of the plurality of pores in the first subwavelength structure is different from the density of the plurality of pores in the second subwavelength structure. A method for manufacturing a light-emitting device according to item 23 or 24, characterized by the above. (Item 26) The process of forming the first lower electrode and the second lower electrode is carried out such that the insulating film includes portions disposed between the bottom surfaces of the plurality of holes in the first subwavelength structure and the first reflective member, and portions disposed between the bottom surfaces of the plurality of holes in the second subwavelength structure and the second reflective member. A method for manufacturing a light-emitting device as described in item 25, characterized by the following: (Item 27) After the step of separating the mold from the insulating film, and before the step of forming the first lower electrode and the second lower electrode, the further step includes etching the insulating film through the plurality of holes in the first subwavelength structure and the plurality of holes in the second subwavelength structure. A method for manufacturing a light-emitting device as described in item 25, characterized by the following: (Item 28) The process further includes filling the plurality of holes in the first subwavelength structure and the plurality of holes in the second subwavelength structure with insulating material. A method for manufacturing a light-emitting device as described in item 25, characterized by the following: (Item 29) The steps from placing the curable composition on the substrate to separating the mold from the insulating film are performed at least twice. A method for manufacturing a light-emitting device according to any one of items 23 to 28, characterized by the following: (Item 30) The process further includes a replication step of forming the mold by replicating the master structure using an imprint process. A method for manufacturing a light-emitting device according to any one of items 23 to 29, characterized by the following: (Item 31) The aforementioned replication process is, A step of placing the master structure and the blank mold opposite each other via a second curable composition, A step of forming a replica structure consisting of a cured film of the second curable composition on which the shape of the master structure has been transferred by curing the second curable composition, A step of obtaining the mold by separating the master structure from the replica structure, A method for manufacturing a light-emitting device according to item 30, characterized by including the following: (others) The invention is not limited to the embodiments described above, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, claims are attached to disclose the scope of the invention. [Explanation of symbols]

[0121] 121a: First reflective member, 121b: Second reflective member, 121c: Third reflective member, 131a: First lower electrode, 131b: Second lower electrode, 131c: Third lower electrode, 141: Insulating film, SWS1: First subwavelength structure, SWS2: Second subwavelength structure, SWS3: Third subwavelength structure

Claims

1. A light-emitting device having a plurality of sub-pixels having a lower electrode and an upper electrode, wherein the plurality of sub-pixels include a first sub-pixel and a second sub-pixel, the first sub-pixel having a first reflective member below a first lower electrode which is the lower electrode of the first sub-pixel, and the second sub-pixel having a second reflective member below a second lower electrode which is the lower electrode of the second sub-pixel, The insulating film is provided, which is positioned below the lower electrodes of the plurality of sub-pixels so as to cover the first reflective member and the second reflective member, The insulating film has a first subwavelength structure disposed between the first reflective member and the first lower electrode, and a second subwavelength structure disposed between the second reflective member and the second lower electrode. The first subwavelength structure and the second subwavelength structure have mutually different effective refractive indices. A light-emitting device characterized by the following features.

2. The insulating film is composed of a cured product of a curable composition. The light-emitting device according to feature 1.

3. The distance between the first reflective member and the first lower electrode, and the distance between the second reflective member and the second lower electrode are equal to each other with an accuracy of 20 nm or less. The light-emitting device according to feature 1.

4. The first subwavelength structure and the second subwavelength structure include a plurality of holes provided in the insulating film. The density of the plurality of pores in the first subwavelength structure is different from the density of the plurality of pores in the second subwavelength structure. The light-emitting device according to feature 1.

5. The insulating film includes a portion disposed between the bottom surface of the plurality of holes in the first subwavelength structure and the first reflective member, and a portion disposed between the bottom surface of the plurality of holes in the second subwavelength structure and the second reflective member. The light-emitting device according to feature 4.

6. The plurality of holes in the first subwavelength structure extend to the upper surface of the first reflecting member, and the plurality of holes in the second subwavelength structure extend to the upper surface of the second reflecting member. The light-emitting device according to feature 4.

7. Gas is present in the aforementioned plurality of holes. The light-emitting device according to feature 4.

8. The aforementioned multiple holes are filled with insulating material. The light-emitting device according to feature 4.

9. The refractive index of the insulating material is higher than that of the insulating film. The light-emitting device according to feature 8.

10. The insulating film comprises a first layer and a second layer, The first subwavelength structure has a portion arranged in the first layer and a portion arranged in the second layer, The second subwavelength structure has a portion arranged in the first layer and a portion arranged in the second layer. The light-emitting device according to feature 1.

11. The distance between the first reflective member and the first lower electrode, and the distance between the second reflective member and the second lower electrode, are within the range of 70 nm or more and 200 nm or less. The light-emitting device according to feature 10.

12. The distance between the first reflective member and the first lower electrode, and the distance between the second reflective member and the second lower electrode, are within the range of 70 nm or more and 200 nm or less. The light-emitting device according to feature 1.

13. The plurality of sub-pixels further include a third sub-pixel, the third sub-pixel having a third reflective member below the third lower electrode, which is the lower electrode of the third sub-pixel. The insulating film further comprises a third subwavelength structure disposed between the third reflective member and the third lower electrode. The first subwavelength structure, the second subwavelength structure, and the third subwavelength structure have mutually different effective refractive indices. The light-emitting device according to feature 1.

14. The distance between the first reflective member and the first lower electrode, the distance between the second reflective member and the second lower electrode, and the distance between the third reflective member and the third lower electrode are equal to each other with an accuracy of 20 nm or less. The light-emitting device according to feature 13.

15. The system further comprises a release agent film disposed between the insulating film and the lower electrodes of the plurality of sub-pixels. The light-emitting device according to feature 1.

16. The device comprises a photoreceptor, an exposure light source for exposing the photoreceptor, a developer for applying a developer to the exposed photoreceptor, and a transfer unit for transferring the image developed in the developer to a recording medium. An image forming apparatus characterized in that the exposure light source has the light-emitting device described in claim 1.

17. A display device comprising a light-emitting device according to any one of claims 1 to 15, and an active element connected to the light-emitting device.

18. It comprises an optical unit having multiple lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image. The photoelectric conversion device is characterized in that the display unit displays an image captured by the image sensor and has a light-emitting device according to any one of claims 1 to 15.

19. It comprises a housing on which a display unit is provided, and a communication unit provided in the housing for communicating with the outside, The display unit is characterized by having a light-emitting device according to any one of claims 1 to 15.

20. A lighting device having a light source and at least one of a light diffusing section and an optical film, The lighting device is characterized in that the light source has the light-emitting device described in any one of claims 1 to 15.

21. A mobile body having an aircraft body and a lighting fixture provided on the aircraft body, The aforementioned light fixture is a mobile body characterized by having a light-emitting device according to any one of claims 1 to 15.

22. A wearable device having a display device for displaying images, The wearable device is characterized in that the display device has a light-emitting device according to any one of claims 1 to 15.

23. A step of forming a first reflective member for a first sub-pixel and a second reflective member for a second sub-pixel on a substrate, A step of placing a curable composition on the substrate, A step of bringing the mold into contact with the curable composition, A step of curing the curable composition while it is in contact with the mold to form an insulating film made of the cured product of the curable composition, A step of separating the mold from the insulating film, The process includes forming a first lower electrode and a second lower electrode, which are respectively placed on the first reflective member and the second reflective member via the insulating film, The insulating film has a first subwavelength structure disposed between the first reflective member and the first lower electrode, and a second subwavelength structure disposed between the second reflective member and the second lower electrode. The first subwavelength structure and the second subwavelength structure have mutually different effective refractive indices. A method for manufacturing a light-emitting device, characterized by the above.

24. The distance between the first reflective member and the first lower electrode, and the distance between the second reflective member and the second lower electrode are equal to each other with an accuracy of 20 nm or less. A method for manufacturing a light-emitting device according to the method described in 23.

25. The first subwavelength structure and the second subwavelength structure include a plurality of holes provided in the insulating film. The density of the plurality of pores in the first subwavelength structure is different from the density of the plurality of pores in the second subwavelength structure. A method for manufacturing a light-emitting device according to the method described in 23.

26. The process of forming the first lower electrode and the second lower electrode is carried out such that the insulating film includes a portion disposed between the bottom surface of the plurality of holes in the first subwavelength structure and the first reflective member, and a portion disposed between the bottom surface of the plurality of holes in the second subwavelength structure and the second reflective member. A method for manufacturing a light-emitting device according to the method described in 25.

27. After the step of separating the mold from the insulating film, and before the step of forming the first lower electrode and the second lower electrode, the further step includes etching the insulating film through the plurality of holes in the first subwavelength structure and the plurality of holes in the second subwavelength structure. A method for manufacturing a light-emitting device according to the method described in 25.

28. The process further includes filling the plurality of holes in the first subwavelength structure and the plurality of holes in the second subwavelength structure with insulating material. A method for manufacturing a light-emitting device according to the method described in 25.

29. The steps from placing the curable composition on the substrate to separating the mold from the insulating film are performed at least twice. A method for manufacturing a light-emitting device according to any one of claims 23 to 28.

30. The process further includes a replication step of forming the mold by replicating the master structure using an imprint process. A method for manufacturing a light-emitting device according to any one of claims 23 to 28.

31. The aforementioned replication process is: A step of placing the master structure and the blank mold opposite each other via a second curable composition, A step of forming a replica structure consisting of a cured film of the second curable composition on which the shape of the master structure has been transferred by curing the second curable composition, A step of obtaining the mold by separating the master structure from the replica structure, A method for manufacturing a light-emitting device according to claim 30, characterized by including the following:

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