Power semiconductor structure
The power semiconductor structure addresses thermal management issues in gallium oxide devices by using heat dissipation grooves and active cooling mechanisms to enhance thermal conductivity, improving device efficiency and reliability.
JP2026086332APending Publication Date: 2026-05-26TAIWAN ASIA SEMICONDUCTOR CORPORATION
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Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- TAIWAN ASIA SEMICONDUCTOR CORPORATION
- Filing Date
- 2025-09-08
- Publication Date
- 2026-05-26
AI Technical Summary
Technical Problem
Gallium oxide-based power semiconductor devices face challenges in thermal management due to low thermal conductivity, leading to reduced efficiency and reliability in high-power applications.
Method used
A power semiconductor structure incorporating a gallium oxide substrate, heat dissipation grooves filled with high thermal conductivity materials, and a metal substrate connected to P-type and N-type semiconductor materials to facilitate active cooling through the Peltier effect, effectively transferring and dissipating thermal energy.
Benefits of technology
Enhances thermal energy dissipation, improving the efficiency and reliability of power semiconductor devices by rapidly transferring and releasing heat, thereby extending their lifespan.
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Smart Images
Figure 2026086332000001_ABST
Abstract
To provide a power semiconductor structure. [Solution] The power semiconductor structure includes a gallium oxide-containing substrate, an active region 11 including a gallium oxide-containing semiconductor layer, a heat dissipation groove 12, a metal substrate 13, and at least one pair of P-type semiconductor material 14 and N-type semiconductor material 15. The gallium oxide-containing semiconductor layer is placed on the gallium oxide-containing substrate. The heat dissipation groove surrounds the gallium oxide-containing semiconductor layer. The heat dissipation groove is placed on the gallium oxide-containing substrate. The metal substrate is thermally conductively connected to the heat dissipation groove. At least one pair of P-type semiconductor material and N-type semiconductor material are connected to both ends of the metal substrate. When an electric current is conducted from the outside, the current flows into the N-type semiconductor material, through the metal substrate, and to the P-type semiconductor material. The thermal energy generated in the gallium oxide-containing semiconductor layer is conducted and absorbed to the metal substrate through the heat dissipation groove, and then released from the ends of the P-type and N-type semiconductor materials away from the metal substrate.
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