Indication device

Abstract

To provide a display device with imaging capabilities. To provide a display device with a high aperture ratio. [Solution] The display device comprises a first light-emitting element, a photodetector, and a first colored layer. The first light-emitting element comprises a first pixel electrode, a first organic layer on the first pixel electrode, and a common electrode on the first organic layer. The photodetector comprises a second pixel electrode, a second organic layer on the second pixel electrode, and a common electrode on the second organic layer. The first organic layer includes a first light-emitting layer, the second organic layer includes a photoelectric conversion layer, the first colored layer is arranged superimposed on the first light-emitting element, and the photoelectric conversion layer is sensitive to the wavelength range of light transmitted by the first colored layer.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device. One aspect of the present invention relates to an imaging device. One aspect of the present invention relates to a display device having an imaging function.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention disclosed herein include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, methods for driving them, or methods for manufacturing them. A semiconductor device refers to any device that can function by utilizing semiconductor properties. [Background technology]

[0003] In recent years, display devices have been required to be highly detailed in order to display high-resolution images. Furthermore, in information terminal devices such as smartphones, tablet devices, and notebook PCs (personal computers), display devices are required to be not only highly detailed but also to have low power consumption. In addition, there is a demand for display devices that not only display images but also have various additional functions, such as touch panel functionality or fingerprint imaging for authentication.

[0004] As a display device, for example, a light-emitting device having a light-emitting element has been developed. Light-emitting elements (also referred to as EL elements) that utilize the electroluminescence (EL) phenomenon have features such as being easy to make thin and light, being able to respond quickly to input signals, and being able to be driven using a DC constant voltage power supply, and are being applied to display devices. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-197522

Summary of the Invention

Problems to be Solved by the Invention

[0006] One aspect of the present invention aims to provide a display device having an imaging function. Or, one aspect of the present invention aims to provide a high-definition imaging device or display device. Or, one aspect of the present invention aims to provide a display device or imaging device with a high aperture ratio. Or, one aspect of the present invention aims to provide an imaging device or display device capable of performing high-sensitivity imaging. Or, one aspect of the present invention aims to provide an imaging device or display device with high display quality. Or, one aspect of the present invention aims to provide a display device capable of acquiring biometric information such as fingerprints. Or, one aspect of the present invention aims to provide a display device functioning as a touch panel. Or, one aspect of the present invention aims to provide a manufacturing method with high productivity for the above display device.

[0007] One aspect of the present invention aims to provide a highly reliable display device, imaging device, or electronic device. One aspect of the present invention aims to provide a display device, imaging device, or electronic device etc. having a novel configuration. One aspect of the present invention aims to at least reduce at least one of the problems of the prior art.

[0008] Note that the description of these problems does not prevent the existence of other problems. Note that one aspect of the present invention does not necessarily need to solve all of these problems. Note that other problems can be extracted from the descriptions in the specification, drawings, claims, etc.

Means for Solving the Problems

[0009] One aspect of the present invention is a display device comprising a first light-emitting element, a photodetector, and a first colored layer, wherein the first light-emitting element comprises a first pixel electrode, a first organic layer on the first pixel electrode, and a common electrode on the first organic layer, the photodetector comprises a second pixel electrode, a second organic layer on the second pixel electrode, and a common electrode on the second organic layer, the first organic layer includes a first light-emitting layer, the second organic layer includes a photoelectric conversion layer, the first colored layer is arranged superimposed on the first light-emitting element, and the photoelectric conversion layer is sensitive to the wavelength range of light transmitted by the first colored layer.

[0010] Furthermore, it is preferable that the distance between the first organic layer and the second organic layer is 8 μm or less in the above configuration.

[0011] Furthermore, it is preferable that the above-described configuration includes a resin layer, the resin layer is located in the region between the first light-emitting element and the light-receiving element, and the side surface of the first organic layer and the side surface of the second organic layer face each other with the resin layer in between.

[0012] Furthermore, it is preferable that the above-described configuration includes an insulating layer, the insulating layer is located between the first light-emitting element and the light-receiving element, and the insulating layer is in contact with the side surface of the first organic layer and the side surface of the second organic layer.

[0013] Furthermore, in the above, it is preferable that the device has a second light-emitting element and a second colored layer, the second light-emitting element has a third pixel electrode, a third organic layer on the third pixel electrode, and a common electrode on the third organic layer, the third organic layer includes the second light-emitting layer, the second colored layer is arranged superimposed on the second light-emitting element, and the second colored layer transmits a different wavelength range of light than the first colored layer. Furthermore, in the above, it is preferable that the first light-emitting layer is made of the same material as the second light-emitting layer.

[0014] Furthermore, it is preferable that the first organic layer comprises a first light-emitting unit on a first pixel electrode, a first charge generation layer on the first light-emitting unit, and a second light-emitting unit on the first charge generation layer, and the third organic layer comprises a third light-emitting unit on a third pixel electrode, a second charge generation layer on the third light-emitting unit, and a fourth light-emitting unit on the second charge generation layer.

[0015] Furthermore, it is preferable that the first light-emitting unit has the same material as the third light-emitting unit, the first charge generation layer has the same material as the second charge generation layer, and the second light-emitting unit has the same material as the fourth light-emitting unit.

[0016] Another aspect of the present invention involves forming a first pixel electrode and a second pixel electrode, depositing a first organic film covering the first and second pixel electrodes, depositing a first sacrificial film on the first organic film, forming a first resist mask on the first sacrificial film and superimposed on the first pixel electrode, processing the first sacrificial film into island-shaped first sacrificial layers using the first resist mask, processing the first organic film into island-shaped first organic layers using the first sacrificial layers as a mask, and covering the first organic layers and the second pixel electrode. This is a method for manufacturing a display device, comprising: forming a second organic film; forming a second sacrificial film on the second organic film; superimposing a second resist mask on the second sacrificial film onto a second pixel electrode; processing the second sacrificial film into island-shaped second sacrificial layers using the second resist mask; processing the second organic film into island-shaped second organic layers using the second sacrificial layers as a mask; superimposing a colored layer on the first organic layer; the first organic layer containing a luminescent organic compound; and the second organic layer containing a photoelectric conversion material.

[0017] Another aspect of the present invention involves forming a first pixel electrode and a second pixel electrode, depositing a first organic film covering the first and second pixel electrodes, depositing a first sacrificial film on the first organic film, forming a first resist mask on the first sacrificial film and superimposed on the first pixel electrode, processing the first sacrificial film into island-shaped first sacrificial layers using the first resist mask, processing the first organic film into island-shaped first organic layers using the first sacrificial layers as a mask, and covering the first organic layers and the second pixel electrode. This is a method for manufacturing a display device, comprising: forming a second organic film; forming a second sacrificial film on the second organic film; superimposing a second resist mask on the second sacrificial film onto a second pixel electrode; processing the second sacrificial film into island-shaped second sacrificial layers using the second resist mask; processing the second organic film into island-shaped second organic layers using the second sacrificial layers as a mask; arranging a colored layer on top of the second organic layer; the first organic layer containing a photoelectric conversion material; and the second organic layer containing a luminescent organic compound.

[0018] Furthermore, in the above, it is preferable to form an insulating film by covering the first organic layer and the second organic layer after the formation of the second organic layer. Furthermore, in the above, it is preferable to form the insulating film using atomic layer deposition.

[0019] Furthermore, in the above, it is preferable to form a resin layer on the insulating film in the region between the first organic layer and the second organic layer. Furthermore, in the above, it is preferable to use a photosensitive organic resin as the resin layer. [Effects of the Invention]

[0020] According to one aspect of the present invention, a display device having an imaging function can be provided. Alternatively, a high-definition imaging device or display device can be provided. Alternatively, a display device or imaging device with a high aperture ratio can be provided. Alternatively, an imaging device or display device capable of high-sensitivity imaging can be provided. Alternatively, an imaging device or display device with high display quality can be provided. Alternatively, a display device capable of acquiring biological information such as fingerprints can be provided. Alternatively, a highly productive method for manufacturing the above-mentioned display device can be provided.

[0021] According to one aspect of the present invention, a highly reliable display device, imaging device, or electronic device can be provided. Alternatively, a display device, imaging device, or electronic device having a novel configuration can be provided. Alternatively, at least one of the problems of the prior art can be mitigated.

[0022] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description in the specification, drawings, claims, etc. [Brief explanation of the drawing]

[0023] [Figure 1] Figures 1A to 1C show examples of the configuration of a display device. [Figure 2] Figures 2A to 2C show examples of display device configurations. [Figure 3] Figures 3A and 3B show examples of display device configurations. [Figure 4] Figures 4A and 4B show examples of the configuration of a display device. [Figure 5] Figures 5A and 5B show examples of display device configurations. [Figure 6] Figures 6A and 6B show examples of the configuration of a display device. [Figure 7] Figures 7A and 7B show examples of display device configurations. [Figure 8] Figures 8A to 8C show examples of methods for manufacturing a display device. [Figure 9] Figures 9A to 9C show examples of methods for manufacturing a display device. [Figure 10] Figures 10A to 10C show examples of methods for manufacturing a display device. [Figure 11] Figures 11A to 11C show examples of methods for manufacturing a display device. [Figure 12] Figures 12A to 12C show examples of methods for manufacturing a display device. [Figure 13] Figures 13A to 13C show examples of methods for manufacturing a display device. [Figure 14] Figures 14A to 14C show examples of methods for manufacturing a display device. [Figure 15] Figures 15A to 15C show examples of methods for manufacturing a display device. [Figure 16] Figures 16A to 16C show examples of methods for manufacturing a display device. [Figure 17] Figure 17 shows an example of a display device configuration. [Figure 18] Figure 18A shows an example of the configuration of a display device. Figure 18B shows an example of the configuration of a transistor. [Figure 19] Figure 19 shows an example of a display device configuration. [Figure 20] Figures 20A and 20B show examples of display device configurations. [Figure 21] Figure 21 shows an example of a display device configuration. [Figure 22] Figure 22 shows an example of a display device configuration. [Figure 23] Figure 23 shows an example of a display device configuration. [Figure 24] Figure 24 shows an example of a display device configuration. [Figure 25] Figure 25 shows an example of a display device configuration. [Figure 26]Figures 26A, 26B, and 26D are cross-sectional views showing examples of display devices. Figures 26C and 26E are diagrams showing examples of images. Figures 26F through 26H are top views showing examples of pixels. [Figure 27] Figures 27A and 27B are cross-sectional views showing an example of a display device. [Figure 28] Figures 28A and 28B are cross-sectional views showing an example of a display device. [Figure 29] Figures 29A to 29E are cross-sectional views showing an example of a display device. [Figure 30] Figures 30A to 30C show examples of pixels. Figures 30D and 30E show examples of pixel circuit diagrams. [Figure 31] Figures 31A to 31J show examples of display device configurations. [Figure 32] Figures 32A and 32B show examples of electronic devices. [Figure 33] Figures 33A to 33D show examples of electronic devices. [Figure 34] Figures 34A to 34F show examples of electronic devices. [Figure 35] Figures 35A to 35F show examples of electronic devices. [Modes for carrying out the invention]

[0024] The embodiments will be described below with reference to the drawings. However, it will be readily apparent to those skilled in the art that the embodiments can be implemented in many different ways, and their form and details can be modified in various ways without departing from the spirit and scope thereof. Accordingly, the present invention shall not be construed as being limited to the contents of the following embodiments.

[0025] In the configuration of the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the hatch patterns are the same, and reference numerals may not be assigned.

[0026] In the figures described herein, the size of each component, the thickness of the layers, or the area may be exaggerated for clarity. Therefore, the scale is not necessarily limited to those figures.

[0027] Furthermore, ordinal numbers such as "the first," "the second," etc., used in this specification are added to avoid confusion of constituent elements and do not imply any numerical limitation.

[0028] In the following, expressions indicating direction, such as "up" and "down," will generally be used in accordance with the orientation shown in the drawings. However, for the purpose of simplifying explanations, the direction referred to as "up" or "down" in the specification may not always coincide with that of the drawings. For example, when explaining the stacking order (or formation order) of a laminate, even if the side on which the laminate is provided (the surface to be formed, the support surface, the adhesive surface, the flat surface, etc.) is located above the laminate in the drawing, that direction may be described as "down," and the opposite direction as "up."

[0029] Furthermore, in this specification, the terms "film" and "layer" are interchangeable. For example, the terms "conductive layer" or "insulating layer" may be interchangeable with the terms "conductive film" or "insulating film."

[0030] In this specification, the term "EL layer" refers to a layer (also called a light-emitting layer) provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting substance, or a laminate including a light-emitting layer.

[0031] In this specification, a display panel, which is one form of a display device, has the function of displaying (outputting) images or the like on its display surface. Therefore, a display panel is one form of an output device.

[0032] Furthermore, in this specification, a display panel on which a connector such as an FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) is attached, or on which an IC (Integrated Circuit) is mounted on the board using a COG (Chip On Glass) method, may be referred to as a display panel module, display module, or simply a display panel.

[0033] (Embodiment 1) This embodiment describes an example of the configuration of a display device according to one aspect of the present invention, and an example of a method for manufacturing the display device.

[0034] One aspect of the present invention is a display device having a light-emitting element (also called a light-emitting device) and a light-receiving element (also called a light-receiving device). The light-emitting element has a pair of electrodes and an EL layer between them. The light-receiving element has a pair of electrodes and an active layer between them. The light-emitting element is preferably an organic EL element (organic electroluminescent element) that emits white light. The light-receiving element is preferably an organic photodiode (organic photoelectric conversion element).

[0035] Furthermore, the display device has, in each pixel, a light-emitting element that emits white light and a colored layer superimposed on the light-emitting element. By using a colored layer that transmits visible light of a different color in the sub-pixels provided in each pixel, the display device can display in full color. Moreover, since the light-emitting elements used in each pixel can be formed using the same material, the manufacturing process can be simplified and manufacturing costs can be reduced.

[0036] One aspect of the present invention functions as an imaging device because it can capture images using multiple light-receiving elements. In this case, the light-emitting element can be used as a light source for imaging. Another aspect of the present invention functions as a display device because it can display images using multiple light-emitting elements. Therefore, one aspect of the present invention can be described as a display device having an imaging function, or an imaging device having a display function.

[0037] For example, in one embodiment of the present invention, a display device has light-emitting elements arranged in a matrix on the display unit, and further, light-receiving elements arranged in a matrix on the display unit. Therefore, the display unit has the function of displaying an image and the function of a light-receiving unit. Since an image can be captured by the multiple light-receiving elements provided on the display unit, the display device can function as an image sensor or a touch panel. That is, it can capture an image with the display unit, or detect when an object approaches or comes into contact with it. Furthermore, since the light-emitting elements provided on the display unit can be used as a light source when receiving light, there is no need to provide a light source separately from the display device, and a highly functional display device can be realized without increasing the number of electronic components.

[0038] In one aspect of the present invention, when an object reflects light emitted from a light-emitting element that has passed through a colored layer, a light-receiving element can detect the reflected light, thereby enabling imaging or touch detection (including non-contact) even in dark environments.

[0039] Furthermore, a display device according to one aspect of the present invention can capture fingerprints or palm prints when a finger, palm, etc., is brought into contact with the display unit. Therefore, an electronic device equipped with a display device according to one aspect of the present invention can perform personal authentication using the captured image of fingerprints or palm prints. This eliminates the need to provide a separate imaging device for fingerprint or palm print authentication, thereby reducing the number of components in the electronic device. In addition, since light-receiving elements are arranged in a matrix on the display unit, fingerprints or palm prints can be captured at any location on the display unit, resulting in a highly convenient electronic device.

[0040] When the light-emitting element of each pixel is formed from a white-emitting organic EL element, there is no need to paint the light-emitting layer separately for each pixel. Therefore, layers other than the pixel electrodes included in the light-emitting element (such as the light-emitting layer) can be common to each pixel. However, some layers included in the light-emitting element are relatively conductive, and if a highly conductive layer is provided in common to each pixel, leakage current (also called side leakage or side leakage current) may occur between pixels. In particular, as the display device becomes higher resolution or has a higher aperture ratio, and the distance between pixels decreases, this leakage current becomes a significant issue. This can lead to a decrease in brightness, a decrease in contrast, and other factors, resulting in a decline in display quality. Furthermore, leakage current can worsen power efficiency and power consumption.

[0041] Furthermore, if a similar leakage current occurs between the light-emitting element and the photodetector, this leakage current can become a source of noise when imaging with the photodetector, potentially reducing the imaging sensitivity (e.g., the signal-to-noise ratio (S / N ratio)).

[0042] Therefore, in one aspect of the present invention, at least a portion of the light-emitting element is processed in each pixel by photolithography, and at least a portion of the light-receiving element is further processed into an island shape in each pixel. Alternatively, at least a portion of the light-receiving element may be processed into an island shape first, and then at least a portion of the light-emitting element may be processed. Here, the portion of the light-emitting element formed into an island shape includes a layer containing a light-emitting compound (also called a light-emitting layer) that the light-emitting element possesses. Furthermore, the portion of the light-receiving element formed into an island shape includes a layer containing a photoelectric conversion material (also called an active layer or photoelectric conversion layer) that the photoelectric conversion element possesses.

[0043] This configuration allows for the interruption of the current leakage path between the light-emitting element and the photodetector. This suppresses the leakage current between the light-emitting element and the photodetector, enabling high-precision imaging with a high signal-to-noise ratio (S / N ratio). As a result, clear images can be captured even with weak light. Consequently, the brightness of the light-emitting element used as the light source can be reduced during imaging, thereby reducing power consumption.

[0044] Furthermore, by separating the current leakage path between two adjacent light-emitting elements, leakage current can be suppressed. This allows for increased brightness, enhanced contrast, improved display quality, improved power efficiency, or reduced power consumption.

[0045] Furthermore, it is preferable to form an insulating layer to protect the sides of the organic multilayer film exposed by etching. This can improve the reliability of the display device.

[0046] When differentiating the light-emitting layers between light-emitting elements of different colors, it is known that this is done by deposition using a metal mask or a shadow mask such as an FMM (Fine Metal Mask, a high-resolution metal mask). In this specification, devices fabricated using a metal mask or FMM may be referred to as MM (metal mask) structured devices.

[0047] As described above, one aspect of the present invention involves processing an organic layer containing a light-emitting layer and an organic layer containing an active layer into a fine pattern by photolithography without using a shadow mask such as a metal mask. In this specification, devices fabricated without using a metal mask or FMM may be referred to as MML (metal maskless) structure devices. By forming with an MML structure, it is possible to realize a display device with high resolution and a large aperture ratio, which has been difficult to achieve until now.

[0048] Regarding the distance between pixels, for example, it is difficult to reduce it to less than 10 μm using a formation method that uses a metal mask, but with the above method, it is possible to narrow it to 8 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance between pixels can be defined by the distance between the opposing ends of adjacent pixel electrodes. Alternatively, the distance between pixels can be defined by the distance between the opposing ends of adjacent organic layers including the light-emitting layer and organic layers including the active layer.

[0049] By reducing the spacing between pixels as described above, the area of ​​the non-emitting region that may exist between two light-emitting elements can be significantly reduced, making it possible to bring the aperture ratio closer to 100%. For example, the aperture ratio can be 50% or more, 60% or more, 70% or more, 80% or more, and even 90% or more, and it is possible to achieve less than 100%.

[0050] In the following, an example of the configuration and manufacturing method of a display device according to one aspect of the present invention will be described with reference to the drawings.

[0051] [Configuration Example 1] Figure 1A shows a schematic top view of the display device 100. Figures 1B and 1C are schematic cross-sectional views corresponding to the dashed lines A1-A2 and C1-C2 in Figure 1A, respectively. The display device 100 has a display unit in which a plurality of pixels 103 are arranged in a matrix.

[0052] A matrix array is applied to pixel 103 shown in Figure 1A. Pixel 103 in Figure 1A is composed of four subpixels: subpixels 103R, 103G, 103B, and 103S. In Figure 1A, the labels R, G, B, and S are added within the region of each subpixel to simplify the distinction between them.

[0053] Sub-pixels 103R, 103G, and 103B have light-emitting elements 110R, 110G, and 110B (hereinafter sometimes collectively referred to as light-emitting element 110) that emit white light. Each sub-pixel emits light of a different color due to the colored layers 129R, 129G, and 129B (hereinafter sometimes collectively referred to as colored layer 129) superimposed on the light-emitting elements 110R, 110G, and 110B. Although not shown in Figure 1B, a colored layer 129B is provided similarly to colored layers 129R and 129G. Sub-pixels 103R, 103G, and 103B may consist of three sub-pixels of red (R), green (G), and blue (B). However, it is not limited to these, and sub-pixels of yellow (Y), cyan (C), and magenta (M) may also be provided.

[0054] Figure 1A shows a configuration in which two subpixels are arranged alternately in one direction. Note that the arrangement method of the subpixels is not limited to this, and other arrangement methods such as stripe arrangement, S-stripe arrangement, delta arrangement, Bayer arrangement, and zigzag arrangement may be applied, or pentile arrangement and diamond arrangement may be used.

[0055] For the light-emitting elements 110R, 110G, and 110B, it is preferable to use EL elements such as OLEDs (Organic Light Emitting Diodes). Examples of light-emitting materials for EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (TADF) materials.

[0056] The sub-pixel 103S has a light-receiving element 110S. For example, a pn-type or pin-type photodiode can be used as the light-receiving element 110S. The light-receiving element 110S functions as a photoelectric conversion element that detects light incident on it and generates an electric charge. The amount of charge generated by the photoelectric conversion element is determined according to the amount of incident light. In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element 110S. Organic photodiodes are easy to thin, lighten, and enlarge in area, and also offer a high degree of freedom in shape and design, making them applicable to various devices.

[0057] Figure 1A also shows a connecting electrode 111C that is electrically connected to the common electrode 113. The connecting electrode 111C is supplied with a potential (e.g., anode potential or cathode potential) to the common electrode 113. The connecting electrode 111C is located outside the display area where the light-emitting elements 110R and the like are arranged. The common electrode 113 is also shown with a dashed line in Figure 1A.

[0058] The connecting electrode 111C can be provided along the outer perimeter of the display area. For example, it may be provided along one side of the outer perimeter of the display area, or it may be provided across two or more sides of the outer perimeter of the display area. That is, if the top surface shape of the display area is rectangular, the top surface shape of the connecting electrode 111C can be a strip, L-shape, U-shape (angle bracket shape), or square, etc.

[0059] As shown in Figure 1B, the display device 100 has light-emitting elements 110R, 110G, 110B (not shown), and a light-receiving element 110S provided on a substrate 101, with a protective layer 121 covering them. Here, the substrate 101 is provided with wiring, transistors, electrodes, etc. (not shown), and preferably an insulating layer is formed on the top. Although the sub-pixel 103B is not shown in Figure 1B, the components included in the sub-pixel 103B can be provided in the same way as the components included in the sub-pixels 103R and 103G. A resin layer 122 is provided on the protective layer 121. Furthermore, the substrate 102 is bonded on top of the resin layer 122. The substrate 102 is provided with a coloring layer 129R, a coloring layer 129G, and a coloring layer 129B (not shown). In addition, an insulating layer 125 and a resin layer 126 on the insulating layer 125 are provided in the region between adjacent light-emitting elements or light-receiving elements.

[0060] The light-emitting element 110R has a pixel electrode 111R, an organic layer 112R on the pixel electrode 111R, an organic layer 114 on the organic layer 112R, and a common electrode 113 on the organic layer 114. The light-emitting element 110G has a pixel electrode 111G, an organic layer 112G on the pixel electrode 111G, an organic layer 114 on the organic layer 112G, and a common electrode 113 on the organic layer 114. The light-receiving element 110S has a pixel electrode 111S, an organic layer 155 on the pixel electrode 111S, an organic layer 114 on the organic layer 155, and a common electrode 113 on the organic layer 114. It is preferable that the light-emitting elements 110R, 110G, 110B, and the light-receiving element 110S are patterned in an island-like manner. The organic layer 114 and the common electrode 113 are provided as a common film on the light-emitting element 110R, light-emitting element 110G, photodetector 110S, and light-emitting element 110B. The organic layer 114 can also be called a common layer.

[0061] The organic layers 112R, 112G, and 112B (not shown) preferably emit white (W) light. The organic layers 112R, 112G, and 112B are layers that include at least an emissive layer. By providing colored layers 129R, 129G, and 129B (not shown), which transmit light of different colors, on top of the organic layers 112R, 112G, and 112B, sub-pixels 103R, 103G, and 103B that emit light of different colors can be formed. There are no particular limitations on the configuration of the light-emitting element in this embodiment, and it may be a single structure or a tandem structure. Examples of the configuration of the light-emitting element will be described later.

[0062] The organic layer 155 of the light-receiving element 110S contains a photoelectric conversion material that is sensitive to visible light or infrared light wavelengths. Preferably, the wavelength range to which the photoelectric conversion material of the organic layer 155 is sensitive includes one or more of the wavelength ranges of light transmitted by the colored layer 129R, the colored layer 129G, or the colored layer 129B. The organic layer 155 can also be called an active layer or a photoelectric conversion layer.

[0063] In the following, when describing matters common to the light-emitting element 110R, light-emitting element 110G, and light-emitting element 110B, they may be referred to simply as light-emitting element 110. Similarly, for components distinguished by letters, such as organic layer 112R, organic layer 112G, and organic layer 112B, when describing matters common to these components, the letters may be omitted and symbols used.

[0064] Furthermore, as shown in Figure 1B, it is preferable that the organic layer 112 and the organic layer 155 are configured to cover the pixel electrode 111. In this case, the side edges of the organic layer 112 and the organic layer 155 are located outside the side edges of the pixel electrode 111. In addition, the areas of the organic layer 112 and the organic layer 155 that do not overlap with the pixel electrode 111 are in contact with the upper surface of the substrate 101. This allows the formation process of the organic layer 112 and the organic layer 155 to be carried out without exposing the pixel electrode 111. Therefore, damage to the pixel electrode 111 can be reduced in this process, thereby improving the yield of the light-emitting element 110 and the photodetector 110S, improving the display quality of the light-emitting element 110, and enabling high-sensitivity imaging with the photodetector 110S.

[0065] In each light-emitting element, the multilayer film located between the pixel electrode and the common electrode 113 can be called the EL (Electroluminescence) layer. In other words, the organic layer 112 and the organic layer 114 can be collectively called the EL layer. In the light-receiving element 110S, the multilayer film located between the pixel electrode 111S and the common electrode 113 can be called the PD (Photodiode) layer. In other words, the organic layer 155 and the organic layer 114 can be collectively called the PD layer.

[0066] Organic layers 112, 155, and 114 can each independently have one or more of the following layers other than the light-emitting layer and the light-receiving layer: an electron injection layer, an electron transport layer, an electron blocking layer, a hole blocking layer, a hole injection layer, and a hole transport layer. For example, organic layer 112 may have a stacked structure of a hole injection layer and a hole transport layer from the pixel electrode 111 side, an electron transport layer on top of the light-emitting layer or light-receiving layer, and organic layer 114 may have an electron injection layer. Alternatively, organic layer 112 may have a stacked structure of an electron injection layer and an electron transport layer from the pixel electrode 111 side, a hole transport layer on top of the light-emitting layer or light-receiving layer, and organic layer 114 may have a hole injection layer.

[0067] Furthermore, regarding layers located between the pair of electrodes of the light-emitting element or photodetector 110S, such as organic layer 112, organic layer 114, and organic layer 155, the name "organic layer" implies that these are layers constituting an organic EL element or organic photoelectric conversion element, and they do not necessarily need to contain organic compounds. For example, organic layer 112, organic layer 114, and organic layer 155 can each be films that do not contain organic compounds, but only inorganic compounds or inorganic materials.

[0068] Pixel electrodes 111R, 111G, and 111B (not shown) are provided for each light-emitting element. A common electrode 113 and an organic layer 114 are provided as a continuous layer common to each light-emitting element and photodetector 110S. A conductive film that is transparent to visible light is used on either each pixel electrode or the common electrode 113, while a conductive film that is reflective is used on the other. By making each pixel electrode transparent and the common electrode 113 reflective, a bottom-emission type display device can be created. Conversely, by making each pixel electrode reflective and the common electrode 113 transparent, a top-emission type display device can be created. Furthermore, by making both each pixel electrode and the common electrode 113 transparent, a dual-emission type display device can be created.

[0069] A protective layer 121 is provided on the common electrode 113, covering the light-emitting element 110R, light-emitting element 110G, light-receiving element 110S, and light-emitting element 110B (not shown). The protective layer 121 has the function of preventing impurities such as water from diffusing to each light-emitting element from above.

[0070] Slits 120 are provided between adjacent light-emitting elements and light-receiving elements 110S, and between two adjacent light-emitting elements. The slits 120 correspond to etched portions of the organic layer 112 or organic layer 155 located between adjacent light-emitting elements and light-receiving elements 110S, or between two adjacent light-emitting elements.

[0071] Here, by processing the organic layers 112 and 155 using photolithography, the distance between each pixel separated by the slit 120 can be narrowed to 8 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance between each pixel can be defined, for example, by the distance between opposing ends of each organic layer 112, the distance between opposing ends of organic layer 112 and organic layer 155, and the distance between opposing ends of each organic layer 155. Alternatively, it can be defined by the distance between opposing ends of adjacent pixel electrodes 111. By narrowing the distance between each pixel in this way, a display device with high resolution and a large aperture ratio can be provided.

[0072] Furthermore, by separating the adjacent organic layers 112 and 155 with the slit 120, the current leakage path between organic layers 112 and 155 can be interrupted. This suppresses the leakage current between organic layers 112 and 155, enabling high-precision imaging with a high signal-to-noise ratio (S / N ratio). As a result, clear images can be obtained even with weak light. Consequently, the brightness of the light-emitting element used as the light source can be reduced during imaging, thereby reducing power consumption.

[0073] Furthermore, by separating adjacent organic layers 112 with slits 120, the leakage path of current between adjacent organic layers 112 can be interrupted, thereby suppressing leakage current. This makes it possible to increase brightness, enhance contrast, improve display quality, increase power efficiency, or reduce power consumption in the light-emitting element.

[0074] The slit 120 is provided with an insulating layer 125 and a resin layer 126. The insulating layer 125 is provided along the side walls and bottom surface of the slit 120. Therefore, the insulating layer 125 is in contact with the side surfaces of the organic layer 112 and the organic layer 155. The resin layer 126 is provided on top of the insulating layer 125 and fills the recesses located in the slit 120. Therefore, the resin layer 126 is located between the side surfaces of the organic layer 112, or between the side surfaces of the organic layer 112 and the organic layer 155. In other words, the side surfaces of the organic layer 112, or the side surfaces of the organic layer 112 and the organic layer 155, face each other with the resin layer 126 in between. Furthermore, the resin layer 126 has the function of flattening the upper surface by filling the recesses located in the slit 120. The resin layer 126 flattens the recess of the slit 120, thereby improving the coverage of the organic layer 114, the common electrode 113, and the protective layer 121.

[0075] Furthermore, since the slit 120 can be formed simultaneously with the formation of the opening for external connection terminals such as the connecting electrode 111C, these can be formed without increasing the number of steps. In addition, because the slit 120 has an insulating layer 125 and a resin layer 126, it has the effect of preventing short circuits between the pixel electrode 111 and the common electrode 113. The resin layer 126 also has the effect of improving the adhesion of the organic layer 114. That is, by providing the resin layer 126, the adhesion of the organic layer 114 is improved, and thus peeling of the organic layer 114 can be suppressed.

[0076] Since the insulating layer 125 is provided in contact with the side surface of the organic layer (for example, organic layer 112, organic layer 155, etc.), it is possible to create a structure in which the organic layer and the resin layer 126 do not come into contact. If the organic layer and the resin layer 126 come into contact, the organic layer may dissolve due to organic solvents contained in the resin layer 126. Therefore, as shown in this embodiment, by providing the insulating layer 125 between the organic layer and the resin layer 126, it is possible to protect the side surface of the organic layer. The slit 120 only needs to be configured to separate at least one or more of the hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, active layer, hole blocking layer, electron transport layer, and electron injection layer.

[0077] The insulating layer 125 can be an insulating layer having an inorganic material. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used for the insulating layer 125. The insulating layer 125 may be a single layer or a laminated structure. Examples of oxide insulating films include silicon oxide film, aluminum oxide film, magnesium oxide film, indium gallium zinc oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, and tantalum oxide film. Examples of nitride insulating films include silicon nitride film and aluminum nitride film. Examples of oxidative nitride insulating films include silicon oxidative nitride film and aluminum oxidative nitride film. Examples of nitride oxide insulating films include silicon nitride film and aluminum nitride film. In particular, by applying an aluminum oxide film, a metal oxide film such as a hafnium oxide film, or an inorganic insulating film such as a silicon oxide film, formed by atomic layer deposition (ALD), to the insulating layer 125, it is possible to form an insulating layer 125 with fewer pinholes and excellent protection for the EL layer.

[0078] In this specification, the term "oxide-nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and the term "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0079] The insulating layer 125 can be formed using sputtering, CVD (Chemical Vapor Deposition), PLD (Pulsed Laser Deposition), ALD, or other methods. It is preferable to form the insulating layer 125 using the ALD method, which provides good coverage.

[0080] As the resin layer 126, an insulating layer having an organic material can be suitably used. For example, as the resin layer 126, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used. Alternatively, as the resin layer 126, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used.

[0081] Furthermore, a photosensitive resin can be used as the resin layer 126. A photoresist may be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0082] Furthermore, by using a colored material (for example, a material containing black pigment) as the resin layer 126, a function may be provided to block stray light from adjacent pixels and suppress color mixing.

[0083] Furthermore, a reflective film (for example, a metal film containing one or more selected from silver, palladium, copper, titanium, and aluminum) may be provided between the insulating layer 125 and the resin layer 126 to reflect the light emitted from the light-emitting layer and provide a function to improve light extraction efficiency.

[0084] The upper surface of the resin layer 126 is preferably flat, but the surface may have a gently curved shape. Figure 1B and others show an example in which the upper surface of the resin layer 126 has a wave-like shape with concave and convex portions, but it is not limited to this. For example, the upper surface of the resin layer 126 may be convex, concave, or flat.

[0085] The protective layer 121 can be, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide film, silicon oxide nitride film, silicon nitride film, silicon nitride film, aluminum oxide film, aluminum oxide nitride film, and hafnium oxide film. Alternatively, semiconductor materials such as indium gallium oxide and indium gallium zinc oxide may be used as the protective layer 121.

[0086] Figure 1C shows a connection portion 130 where the connecting electrode 111C and the common electrode 113 are electrically connected. In the connection portion 130, the common electrode 113 is provided on the connecting electrode 111C via an organic layer 114. In addition, an insulating layer 125 is provided in contact with the side surface of the connecting electrode 111C, and a resin layer 126 is provided on the insulating layer 125.

[0087] It is not necessary to provide the organic layer 114 at the connection portion 130. In that case, at the connection portion 130, the common electrode 113 is provided in contact with the connecting electrode 111C, and the protective layer 121 is provided covering the common electrode 113.

[0088] As the protective layer 121, a laminated film of an inorganic insulating film and an organic insulating film can also be used. For example, it is preferable to have a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films. Furthermore, it is preferable that the organic insulating film functions as a planarizing film. This makes the upper surface of the organic insulating film flat, thereby improving the coverage of the inorganic insulating film on top of it and enhancing its barrier properties. In addition, since the upper surface of the protective layer 121 is flat, it is preferable because it reduces the influence of uneven shapes caused by the structure below when a structure (e.g., a color filter, electrodes of a touch sensor, a lens, or a lens array) is provided above the protective layer 121.

[0089] A resin layer 122 is provided on the protective layer 121. Various types of curing adhesives can be used for the resin layer 122, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. A two-component mixed resin may also be used. Furthermore, adhesive sheets may be used.

[0090] A colored layer 129 (colored layer 129R, colored layer 129G, and colored layer 129B (not shown)) is provided between the resin layer 122 and the substrate 102. Colored layer 129R has a region that overlaps with the light-emitting element 110R, colored layer 129G has a region that overlaps with the light-emitting element 110G, and colored layer 129B has a region that overlaps with the light-emitting element 110B (not shown). Colored layers 129R, 129G, and 129B each have a region that overlaps with at least the light-emitting layer of each of the light-emitting elements 110.

[0091] The colored layers 129R, 129G, and 129B have the function of transmitting light in different wavelength ranges. For example, colored layer 129R has the function of transmitting light with intensity in the red wavelength range, colored layer 129G has the function of transmitting light with intensity in the green wavelength range, and colored layer 129B has the function of transmitting light with intensity in the blue wavelength range. As a result, the display device 100 can display in full color. The colored layer 129 may also have the function of transmitting cyan, magenta, or yellow light.

[0092] Here, it is preferable that adjacent colored layers 129 have overlapping regions. Specifically, it is preferable that adjacent colored layers 129 have overlapping regions in regions that do not overlap with the light-emitting element 110. By overlapping colored layers 129 that transmit light of different colors, the colored layers 129 can function as light-shielding layers in the overlapping regions. Therefore, it is possible to suppress the leakage of light emitted by the light-emitting element 110 to adjacent sub-pixels. For example, it is possible to suppress the incidence of light emitted by the light-emitting element 110R that overlaps with the colored layer 129R onto the colored layer 129G. Therefore, the contrast of the image displayed on the display device can be increased, and a display device with high display quality can be realized.

[0093] It is not necessary for adjacent colored layers 129 to have overlapping regions. In this case, it is preferable to provide a light-shielding layer in a region that does not overlap with the light-emitting element 110. The light-shielding layer can be provided, for example, on the side of the substrate 102 that faces the resin layer 122.

[0094] In the above description, the organic layer 112 and the organic layer 155 are shown in a configuration that covers the pixel electrode 111, but the present invention is not limited to this. As shown in Figure 2A, the organic layer 112 and the organic layer 155 may be formed only on the flat portion of the pixel electrode 111 and not extending over the edge of the pixel electrode 111. Here, Figure 2A is a schematic cross-sectional view corresponding to the dashed line A1-A2 in Figure 1A. By adopting such a configuration, it is possible to suppress the occurrence of step breaks in the organic layer 112 and the organic layer 155 due to the step difference of the pixel electrode 111. Furthermore, it is possible to prevent further step breaks from occurring in the organic layer 114 and the common electrode 113 due to such step breaks.

[0095] Furthermore, as shown in Figure 2B, the side surfaces of the organic layers 112 and 155 may be approximately aligned with the side surface of the pixel electrode 111. Here, Figure 2B is a schematic cross-sectional view corresponding to the dashed line A1-A2 in Figure 1A.

[0096] Alternatively, as shown in Figure 2C, the colored layer 129 may be provided in contact with the upper surface of the protective layer 121. In this case, the resin layer 122 is provided covering the colored layer 129 and the protective layer 121. By forming the colored layer 129 on the protective layer 121, alignment between each light-emitting element and each colored layer 129 is facilitated, enabling the realization of an extremely high-definition display device.

[0097] Next, preferred configurations of the slit 120 and its vicinity will be described in detail. Figure 3A is a schematic cross-sectional view including a portion of the light-emitting element 110R, a portion of the light-emitting element 110G, and the region between them in Figure 1B.

[0098] As shown in Figure 3A, the ends of the pixel electrode 111 are preferably tapered. This improves the step coverage of the organic layer 112. In this specification, a tapered end of an object means that the angle between the surface and the surface to be formed in the region of that end is greater than 0 degrees and less than 90 degrees, and that the cross-sectional shape has such that the thickness increases continuously from the end. Here, the case where the pixel electrode 111R etc. is a single-layer structure is shown, but multiple layers may be stacked.

[0099] An organic layer 112R is provided covering the pixel electrode 111R. Similarly, an organic layer 112G is provided covering the pixel electrode 111G. These organic layers 112 are formed by dividing a continuous film with a slit 120.

[0100] The insulating layer 125 is provided inside the slit 120 and is in contact with the side surfaces of the organic layer 112R and the side surfaces of the organic layer 112G. The insulating layer 125 also covers the upper surface of the substrate 101.

[0101] The resin layer 126 is provided in contact with the upper and side surfaces of the insulating layer 125. The resin layer 126 has the function of flattening the recesses on the surface of the organic layer 114.

[0102] The organic layer 114, common electrode 113, and protective layer 121 are formed in this order, covering the upper surfaces of the organic layer 112R, organic layer 112G, insulating layer 125, and resin layer 126. Note that the organic layer 114 may be omitted if it is not needed.

[0103] Figure 3B shows a schematic cross-sectional view of a portion of the light-emitting element 110G, a portion of the light-receiving element 110S, and the slit 120 located between them.

[0104] An organic layer 112G is provided covering the pixel electrode 111G. An organic layer 155 is also provided covering the pixel electrode 111S. The organic layer 112G and the organic layer 155 are separated by a slit 120.

[0105] In the enlarged views shown in Figures 3A and 3B, the regions between the light-emitting element 110R and 110G, and between the light-emitting element 110G and the light-receiving element 110S were explained, but the regions between the light-emitting element 110R and 110B, between the light-emitting element 110G and 110B, between the light-emitting element 110R and the light-receiving element 110S, and between the light-emitting element 110B and the light-receiving element 110S have similar configurations.

[0106] Figures 4A and 4B are schematic cross-sectional views of the case where the insulating layer 125 is not present. In Figure 4A, the resin layer 126 is provided in contact with the side surface of the organic layer 112R and the side surface of the organic layer 112G. In Figure 4B, the resin layer 126 is provided in contact with the side surface of the organic layer 155 and the side surface of the organic layer 112G.

[0107] In this case, the solvent used to form the resin layer 126 may cause a portion of the EL layer or PD layer to dissolve. Therefore, if an insulating layer 125 is not provided, it is preferable to use water, or an alcohol such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin as the solvent for the resin layer 126. However, it is not limited to these, and any solvent that does not dissolve or does not easily dissolve the EL layer and PD layer may be used.

[0108] Thus, one aspect of the present invention allows for a display device in which no insulator is provided to cover the ends of the pixel electrodes. In other words, there is no insulator between the pixel electrodes and the EL layer. This configuration allows for efficient extraction of light emitted from the EL layer, thereby significantly reducing the viewing angle dependence. For example, in one aspect of the present invention, the viewing angle (the maximum angle at which a constant contrast ratio is maintained when viewing the screen from an oblique direction) can be set to a range of 100° or more and less than 180°, preferably 150° or more and 170° or less. The above viewing angle can be applied to both the vertical and horizontal directions. By using one aspect of the present invention, the viewing angle characteristics are improved, and the visibility of images can be enhanced.

[0109] [Differentiation] Figures 5A and 5B are modified versions of Figures 3A and 3B, respectively. Figures 5A and 5B show examples where an insulating layer 131 is provided to cover the ends of the pixel electrodes.

[0110] The insulating layer 131 has the function of flattening the surface on which the organic layer 112 is formed. The edges of the insulating layer 131 are preferably tapered. Furthermore, by using an organic resin for the insulating layer 131, its surface can be made gently curved. This improves the coverage of the film formed on the insulating layer 131. The insulating layer 131 also has the function of preventing two adjacent pixel electrodes 111 from unintentionally short-circuiting.

[0111] Examples of materials that can be used for the insulating layer 131 include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0112] As shown in Figures 5A and 5B, the insulating layer 131 may have a recess in the region overlapping with the slit 120. This recess can be formed when a portion of the upper part of the insulating layer 131 is etched during the etching process to form the slit 120. A portion of the insulating layer 125 is formed to fit into the recess of the insulating layer 131, thereby improving their adhesion. Here, the slit 120 is provided in the region overlapping with the insulating layer 131.

[0113] Figures 6A and 6B show examples where an insulating layer 132 is provided on an insulating layer 131.

[0114] The insulating layer 132 overlaps with the edge of the pixel electrode 111 via the insulating layer 131. Furthermore, the insulating layer 132 is provided covering the edge of the insulating layer 131. Additionally, the insulating layer 132 has a portion that contacts the upper surface of the pixel electrode 111.

[0115] The insulating layer 132 preferably has a tapered shape at its edges. This improves the stepped coverage of films formed on the insulating layer 132, such as the EL layer that covers the edges of the insulating layer 132.

[0116] Furthermore, it is preferable that the insulating layer 132 is thinner than the insulating layer 131. By making the insulating layer 132 thinner, the step coverage of the film formed on the insulating layer 132 can be improved.

[0117] As inorganic insulating materials that can be used for the insulating layer 132, for example, oxides or nitrides such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, aluminum oxide, aluminum oxide nitride, or hafnium oxide can be used. Alternatively, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, and neodymium oxide may also be used.

[0118] Furthermore, the insulating layer 132 may be laminated with a film containing the inorganic insulating material described above. For example, it can be a laminated structure in which a silicon oxide film or a silicon oxynitride film is laminated on a silicon nitride film, or a laminated structure in which a silicon oxide film or a silicon oxynitride film is laminated on an aluminum oxide film. Since the silicon oxide film and the silicon oxynitride film are particularly resistant to etching, it is preferable to place them on the upper side. Also, since the silicon nitride film and the aluminum oxide film are films that do not easily absorb water, hydrogen, oxygen, etc., placing them on the insulating layer 131 side functions as a barrier layer that prevents gases detached from the insulating layer 131 from diffusing into the light-emitting element.

[0119] Here, the slit 120 is provided in a region that overlaps with the insulating layer 132. By providing the insulating layer 132, it is possible to prevent the upper surface of the insulating layer 131 from being etched when the slit 120 is formed.

[0120] [Configuration Example 2] The following sections will explain more specific configuration examples.

[0121] Figure 7A is a schematic cross-sectional view of the display device illustrated below. Figure 7A shows a cross-section of the region including the light-emitting element 110R, light-emitting element 110G, light-emitting element 110B, light-receiving element 110S, and connection part 130. Figure 7B is an enlarged schematic cross-sectional view of the slit 120 located between the light-emitting element 110R and light-emitting element 110G and its vicinity.

[0122] The light-emitting element 110B has a pixel electrode 111B, an organic layer 112B, an organic layer 114, and a common electrode 113. A colored layer 129B is also provided superimposed on the light-emitting element 110B. The light-emitting elements 110R and 110G have a similar configuration.

[0123] Below the pixel electrode 111, a conductive layer 161, a conductive layer 162, and a resin layer 163 are provided.

[0124] The conductive layer 161 is provided on the insulating layer 105. Here, the insulating layer 105 is an insulating layer provided on the substrate 101, and the substrate 101 is provided with wiring, transistors, electrodes, etc. (not shown). The conductive layer 161 has a portion that penetrates the insulating layer 105 at an opening provided in the insulating layer 105. The conductive layer 161 functions as wiring or an electrode that electrically connects the wiring, transistors, electrodes, etc. (not shown) located below the insulating layer 105 to the pixel electrode 111.

[0125] The conductive layer 161 has a recess formed in the portion located at the opening of the insulating layer 105. The resin layer 163 is provided to fill this recess and functions as a planarizing film. The upper surface of the resin layer 163 is preferably as flat as possible, but the surface may have a gently curved shape. Figure 7A and others show an example in which the upper surface of the resin layer 163 has a wave-like shape with recesses and convex portions, but it is not limited to this. For example, the upper surface of the resin layer 163 may be a convex surface, a concave surface, or a flat surface.

[0126] A conductive layer 162 is provided on the conductive layer 161 and the resin layer 163. The conductive layer 162 functions as an electrode that electrically connects the conductive layer 161 and the pixel electrode 111.

[0127] Here, if the light-emitting element 110 is an upward-extrusion type light-emitting element, the conductive layer 162 can be made to function as a reflective electrode by using a film that is reflective to visible light as the conductive layer 162 and a film that is transparent to visible light as the pixel electrode 111. Furthermore, since the conductive layer 162 and the pixel electrode 111 can also be provided above the opening (also called the contact portion) of the insulating layer 105 via the resin layer 163, the portion overlapping with the contact portion can also be made into a light-emitting region. Therefore, the aperture ratio can be increased.

[0128] Similarly, when the light-receiving element 110S is a photoelectric conversion element that receives light from above, a reflective film can be used on the conductive layer 162 and a translucent film on the pixel electrode 111. Furthermore, the contact area can also function as a light-receiving region, thereby increasing the light-receiving area and improving light-receiving sensitivity.

[0129] Furthermore, the thickness of each pixel electrode 111 may differ from that of the others. In this case, the pixel electrodes 111 can be used as an optical adjustment layer for the microcavity. When a microcavity is used, a film having transparency and reflectivity is used as a common electrode.

[0130] Figures 7A and 7B show examples where the shape of the resin layer 126 differs from that shown in Figure 1B and other figures.

[0131] As shown in Figure 7B, the upper part of the resin layer 126 has a shape that is wider than the slit 120. As will be described later, the insulating layer 125 is processed using the resin layer 126 as an etching mask, so a portion of the insulating layer 125 remains covered by the resin layer 126. Furthermore, a portion of the sacrificial layer 145 used in the manufacturing process of the display device also remains for the same reason. Specifically, the sacrificial layer 145 is provided on the organic layer 112 near the slit 120. Also, a portion of the insulating layer 125 is provided covering the upper surface of the sacrificial layer 145. In addition, the resin layer 126 is provided covering the sacrificial layer 145 and the insulating layer 125. In this specification, the sacrificial layer may be referred to as the mask layer.

[0132] In this case, it is preferable that the ends of the insulating layer 125 and the ends of the sacrificial layer 145 each have a tapered shape. This makes it possible to improve the stepped coverage of the organic layer 114 and the like.

[0133] [Example of manufacturing method] In the following, an example of a method for manufacturing a display device according to one aspect of the present invention will be described with reference to the drawings. Here, the display device shown in Figure 7A above will be used as an example. Figures 8A to 12C are schematic cross-sectional views of each step in the example of the method for manufacturing the display device described below. In addition, in Figure 8A and the following, schematic cross-sectional views of the connection part 130 and its vicinity are also shown on the right side.

[0134] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed using methods such as sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), and ALD. CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic CVD (MOCVD).

[0135] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating.

[0136] Furthermore, when processing the thin films that constitute the display device, photolithography or the like can be used. In addition, the thin films may be processed by nanoimprint lithography, sandblasting, lift-off lithography, or the like. Alternatively, island-shaped thin films may be directly formed by a film deposition method using a shielding mask such as a metal mask.

[0137] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film by etching or other means, and removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0138] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other light sources such as ultraviolet light, KrF laser light, or ArF laser light can also be used. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light, X-rays, etc., may be used as the light source for exposure. An electron beam can also be used instead of the light source for exposure. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it enables extremely fine processing. Note that when exposure is performed by scanning a beam such as an electron beam, a photomask may not be necessary.

[0139] For etching thin films, methods such as dry etching, wet etching, and sandblasting can be used.

[0140] [Preparation of circuit board 101] As the substrate 101, a substrate having at least sufficient heat resistance to withstand subsequent heat treatment can be used. When an insulating substrate is used as the substrate 101, glass substrates, quartz substrates, sapphire substrates, ceramic substrates, organic resin substrates, etc., can be used. In addition, semiconductor substrates such as single-crystal semiconductor substrates made of silicon, silicon carbide, etc., polycrystalline semiconductor substrates, compound semiconductor substrates such as silicon germanium, and SOI (Silicon On Insulator) substrates can be used.

[0141] In particular, it is preferable to use a substrate 101 on which a semiconductor circuit including semiconductor elements such as transistors is formed on the semiconductor substrate or insulating substrate. It is preferable that the semiconductor circuit constitutes, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be configured.

[0142] An insulating layer 105 is provided at the top of the substrate 101. The insulating layer 105 has multiple openings that reach transistors, wiring, electrodes, etc., provided on the substrate 101. These openings can be formed by photolithography.

[0143] As the insulating layer 105, an inorganic insulating material or an organic insulating material can be used.

[0144] [Formation of conductive layer 161, resin layer 163, conductive layer 162, and pixel electrode 111] A conductive film, which will become the conductive layer 161, is formed on the insulating layer 105. At this time, a recess is formed in the conductive film due to the opening in the insulating layer 105.

[0145] Next, a resin layer 163 is formed in the recess of the conductive film.

[0146] It is preferable to use a photosensitive resin as the resin layer 163. In this case, the resin layer 163 can be formed by first depositing a resin film, exposing the resin film through a photomask, and then performing a development process. After that, the upper part of the resin layer 163 may be etched by ashing or the like to adjust the height of the upper surface of the resin layer 163.

[0147] Furthermore, when a non-photosensitive resin is used as the resin layer 163, the resin layer 163 can be formed by etching the upper part of the resin film after it has been deposited, using ashing or the like, until the surface of the conductive film that will become the conductive layer 161 is exposed, so that the thickness is optimized.

[0148] Next, a conductive film to become the conductive layer 161 and a conductive film to become the conductive layer 162 are deposited on the resin layer 163. Furthermore, conductive films to become the pixel electrode 111 and the connecting electrode 111C are deposited on the conductive film to become the conductive layer 162. After that, a resist mask is formed on the three conductive films by photolithography, and unnecessary parts of the conductive film are removed by etching. Subsequently, by removing the resist mask, the conductive layer 161, conductive layer 162, pixel electrode 111, and connecting electrode 111C can be formed in the same process (Figure 8A).

[0149] In this example, conductive layer 161 and conductive layer 162 were formed using the same photomask and in the same process, but conductive layer 161 and conductive layer 162 may be formed individually using different photomasks. In this case, it is preferable to process conductive layer 161 and conductive layer 162 such that conductive layer 161 is contained inside the contour of conductive layer 162 in a plan view.

[0150] Alternatively, the conductive layer 161 and conductive layer 162 may be formed first, and then the pixel electrode 111 and connecting electrode 111C may be formed. In this case, a conductive film that will become the pixel electrode 111 and connecting electrode 111C is formed covering the conductive layer 161 and conductive layer 162, and a portion of the conductive film is removed by etching to form the pixel electrode 111 and connecting electrode 111C. At this time, it is preferable to form the pixel electrode 111 and connecting electrode 111C so as to encompass the conductive layer 161 and conductive layer 162, because the conductive layer 161 and conductive layer 162 are not exposed to the etching atmosphere during the formation of the pixel electrode 111, etc.

[0151] [Deposition of organic film 112f] Next, an organic film 112f is formed to cover the pixel electrode 111 and the connecting electrode 111C (Figure 8B). The organic film 112f is a film that will be processed into the organic layer 112 in a later step, and any material applicable to the organic layer 112 described above may be used. The organic film 112f can preferably be formed by vacuum deposition. However, it is not limited to this, and it can also be formed by sputtering or inkjet, etc. Furthermore, the above-described film formation method can be used as appropriate.

[0152] In Figure 8B, an organic film 112f is provided covering the connecting electrode 111C, but the present invention is not limited to this. For example, by using a mask to define the film deposition area (also called an area mask or rough metal mask, to distinguish it from a fine metal mask), the film deposition area of ​​the organic film 112f can be limited to the inside of the connection portion 130, so that the organic film 112f does not overlap the connecting electrode 111C. This prevents the connecting electrode 111C from coming into contact with the organic film 112f.

[0153] Alternatively, the organic film 112f may be fabricated and deposited using a fine metal mask. In this case, it is preferable that the organic film 112f covers only the pixel electrodes 111R, 111G, and 111B, and not the pixel electrode 111S and the connecting electrode 111C. This prevents the pixel electrode 111S and the connecting electrode 111C from coming into contact with the organic film 112f.

[0154] [Deposition of sacrificial film 144] Next, a sacrificial film 144 is formed by covering the organic film 112f. In this specification, the sacrificial film may also be referred to as a mask film.

[0155] The sacrificial film 144 can be a film with high resistance to etching of the organic layer 112, i.e., a film with a high etching selectivity ratio. Alternatively, the sacrificial film 144 can be a film with a high etching selectivity ratio with other sacrificial films, such as the sacrificial film 146 described later. Furthermore, it is particularly preferable that the sacrificial film 144 be a film that can be removed by a wet etching method that causes minimal damage to the organic layer 112.

[0156] As the sacrificial film 144, suitable examples include metal films, alloy films, metal oxide films, semiconductor films, and inorganic films such as inorganic insulating films. The sacrificial film 144 can be formed by various film deposition methods such as sputtering, vapor deposition, CVD, and ALD.

[0157] In particular, since the ALD method causes little damage to the layer to be formed, it is preferable to form the sacrificial film 144 directly on the organic film 112f using the ALD method.

[0158] As the sacrificial film 144, for example, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metallic materials, can be used. In particular, it is preferable to use low-melting-point materials such as aluminum or silver.

[0159] Furthermore, metal oxides such as indium gallium zinc oxide (In-Ga-Zn oxide, also written as IGZO) can be used as the sacrificial film 144. In addition, indium oxide, indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide), indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), etc. can be used. Alternatively, indium tin oxide containing silicon can also be used.

[0160] Furthermore, this also applies when element M (where M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) is used instead of gallium.

[0161] Furthermore, the sacrificial film 144 can be an oxide such as aluminum oxide, hafnium oxide, or silicon oxide, a nitride such as silicon nitride or aluminum nitride, or an oxynitride such as silicon oxynitride. Such inorganic insulating materials can be formed using film deposition methods such as sputtering, CVD, or ALD.

[0162] Furthermore, an organic material may be used for the sacrificial film 144. For example, as the organic material, a material that is soluble in a chemically stable solvent relative to the organic film 112f may be used. In particular, a material soluble in water or alcohol can be suitably used for the sacrificial film 144. When forming the sacrificial film 144, it is preferable to apply it using a wet deposition method while dissolved in a solvent such as water or alcohol, and then perform a heat treatment to evaporate the solvent. At this time, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the EL layer.

[0163] Wet film deposition methods that can be used to form the sacrificial film 144 include spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0164] As the sacrificial film 144, organic resins such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resins can be used. Alternatively, fluororesins such as perfluoropolymers may be used for the sacrificial film 144.

[0165] [Deposition of sacrificial film 146] Next, a sacrificial film 146 is deposited on the sacrificial film 144 (Figure 8C).

[0166] Sacrificial film 146 is a film used as a hard mask when etching sacrificial film 144 later. Also, sacrificial film 144 is exposed when processing sacrificial film 146 later. Therefore, a combination of sacrificial film 144 and sacrificial film 146 is selected, each having a high etching selectivity ratio. Thus, depending on the etching conditions of sacrificial film 144 and sacrificial film 146, the film that can be used for sacrificial film 146 can be selected.

[0167] The sacrificial film 146 can be selected from a variety of materials, depending on the etching conditions of the sacrificial film 144 and the sacrificial film 146. For example, it can be selected from films that can be used for the sacrificial film 144.

[0168] For example, an oxide film can be used as the sacrificial film 146. Typically, oxide films or oxynitride films such as silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, and hafnium oxynitride can be used.

[0169] Furthermore, a nitride film can be used as the sacrificial film 146, for example. Specifically, nitrides such as silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, and germanium nitride can be used.

[0170] For example, it is preferable to use an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide formed by the ALD method as the sacrificial film 144, and to use an indium-containing metal oxide such as IGZO formed by the sputtering method as the sacrificial film 146. Alternatively, it is preferable to use a metal such as tungsten, molybdenum, copper, aluminum, titanium, or tantalum, or an alloy containing such a metal, as the sacrificial film 146.

[0171] Furthermore, for example, an organic film (e.g., a PVA film) formed using either a vapor deposition method or the wet film formation method described above can be used as the sacrificial film 144, and an inorganic film (e.g., a silicon oxide film or a silicon nitride film) formed using a sputtering method can be used as the sacrificial film 146.

[0172] Furthermore, an organic film that can be used for the organic layer 112 may be used as the sacrificial film 146. For example, the same organic film used for the organic layer 112 can be used for the sacrificial film 146. Using such an organic film is preferable because it allows the same deposition apparatus to be used for both the organic layer 112 and the sacrificial film. Moreover, the process can be simplified because the sacrificial layer can be used as a mask to simultaneously remove the organic layer 112 when etching.

[0173] [Formation of resist mask 143] Next, a resist mask 143 is formed on the sacrificial film 146 at positions overlapping with the pixel electrodes 111R, 111G, and 111B, respectively (Figure 9A). At this time, no resist mask is formed at positions overlapping with the pixel electrode 111S and the connecting electrode 111C.

[0174] The resist mask 143 can use a resist material containing a photosensitive resin, such as a positive-type resist material or a negative-type resist material.

[0175] In this case, if the resist mask 143 is formed on the sacrificial film 144 without the sacrificial film 146, there is a risk that the organic film 112f, etc., may dissolve due to the solvent of the resist material if defects such as pinholes exist in the sacrificial film 144. Using the sacrificial film 146 can prevent such problems from occurring.

[0176] Furthermore, in cases where a solvent that does not dissolve the organic film 112f is used as the solvent for the resist material, the resist mask 143 may be formed directly on the sacrificial film 144 without using the sacrificial film 146.

[0177] [Etching of sacrificial film 146] Next, the portion of the sacrificial film 146 that is not covered by the resist mask 143 is removed by etching to form island-shaped sacrificial layers 147.

[0178] When etching the sacrificial film 146, it is preferable to use etching conditions with a high selectivity ratio so that the sacrificial film 144 is not removed by the etching. The sacrificial film 146 can be etched by wet etching or dry etching, but by using dry etching, it is possible to suppress the reduction of the pattern of the sacrificial layer 147.

[0179] [Removal of Resist Mask 143] Next, remove the resist mask 143.

[0180] The resist mask 143 can be removed by wet etching or dry etching. In particular, it is preferable to remove the resist mask 143 by dry etching (also called plasma ashing) using oxygen gas as the etching gas.

[0181] In this case, the removal of the resist mask 143 is performed while the organic film 112f is covered by the sacrificial film 144, thus suppressing the impact on the organic film 112f. In particular, since contact with oxygen can adversely affect the electrical properties of the organic film 112f, this method is suitable when etching is performed using oxygen gas, such as plasma ashing. Furthermore, even when the resist mask 143 is removed by wet etching, the organic film 112f does not come into contact with the chemical solution, thus preventing the organic film 112f from dissolving.

[0182] [Etching of sacrificial film 144] Next, using the sacrificial layer 147 as a hard mask, a portion of the sacrificial film 144 is removed by etching to form island-shaped sacrificial layers 145 (Figure 9B).

[0183] The sacrificial film 144 can be etched by wet etching or dry etching, but dry etching is preferred because it can suppress pattern reduction.

[0184] [Etching of organic film 112f] Next, a portion of the organic film 112f not covered by the sacrificial layer 145 is removed by etching to form island-like organic layers 112R, 112G, and 112B (Figure 9C). Slits 120 are also formed between each organic layer 112. At the same time, the upper surfaces of the pixel electrode 111S and the connecting electrode 111C are exposed.

[0185] In particular, for etching the organic film 112f, it is preferable to use dry etching with an etching gas that does not contain oxygen as its main component. This suppresses the deterioration of the organic film 112f and enables the realization of a highly reliable display device. Examples of etching gases that do not contain oxygen as their main component include noble gases such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, H2, or He. Alternatively, a mixed gas of the above gases and an oxygen-free diluent gas can be used as the etching gas.

[0186] Furthermore, etching of the organic film 112f is not limited to the above; it may also be performed by dry etching using other gases or by wet etching.

[0187] Furthermore, using dry etching with oxygen gas or a mixed gas containing oxygen gas as the etching gas for etching the organic film 112f can increase the etching rate. Therefore, etching can be performed under low power conditions while maintaining a sufficiently fast etching rate, thereby reducing etching damage. In addition, problems such as the adhesion of reaction products generated during etching can be suppressed. For example, a mixed gas in which oxygen gas is added to an etching gas that does not primarily contain oxygen can be used as the etching gas.

[0188] As described above, by processing the organic layer 112 using photolithography, the distance between each pixel separated by the slit 120 can be narrowed to 8 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. By narrowing the distance between each pixel in this way, a display device with high resolution and a large aperture ratio can be provided.

[0189] Furthermore, by separating adjacent organic layers 112 with slits 120, the leakage path of current between adjacent organic layers 112 can be interrupted, thereby suppressing leakage current. This makes it possible to increase brightness, enhance contrast, improve display quality, increase power efficiency, or reduce power consumption in the light-emitting element.

[0190] Furthermore, the above process allows for the simultaneous formation of organic layers 112R, 112G, and 112B corresponding to the light-emitting elements 110R, 110G, and 110B. This reduces the number of patterning steps for the organic layer to one-third compared to the case where red, green, and blue light-emitting elements are produced separately. By using the above method, the manufacturing process can be simplified, and the productivity of one embodiment of the present invention can be improved.

[0191] Furthermore, the insulating layer 105 is exposed during etching of the organic film 112f. For this reason, it is preferable to use a film with high resistance to etching of the organic film 112f for the insulating layer 105. In addition, during etching of the organic film 112f, the upper part of the insulating layer 105 may be etched, and the portion not covered by the organic layer 112 may become thinner.

[0192] [Deposition of organic film 155f] Next, an organic film 155f is formed to cover the pixel electrode 111 and the connecting electrode 111C (Figure 10A). The organic film 155f is a film that will be processed into the organic layer 155 in a later step, and any material applicable to the organic layer 155 described above may be used. The organic film 155f can preferably be formed by vacuum deposition. However, it is not limited to this, and it can also be formed by sputtering or inkjet, etc. Furthermore, the above-described film formation method can be used as appropriate.

[0193] Here, since sacrificial layers 145 and 147 are provided on the organic layer 112, it is possible to prevent the upper surface of the organic layer 112 from coming into contact with the organic film 155f.

[0194] Furthermore, when forming the organic film 155f, an area mask may be used to limit the film formation area of ​​the organic film 155f to the area inside the connection portion 130, so that the organic film 155f does not overlap with the connection electrode 111C. This prevents the connection electrode 111C from coming into contact with the organic film 155f.

[0195] [Deposition of sacrificial film 174] Next, a sacrificial film 174 is formed by covering the organic film 155f.

[0196] The sacrificial film 174 can be a film with high resistance to etching of the organic layer 155, i.e., a film with a high etching selectivity ratio. Alternatively, the sacrificial film 174 can be a film with a high etching selectivity ratio with other sacrificial films, such as the sacrificial film 176 described later. Furthermore, it is particularly preferable that the sacrificial film 174 be a film that can be removed by a wet etching method that causes minimal damage to the organic layer 155.

[0197] As the sacrificial film 174, any material that can be used for the sacrificial film 144 described above can be suitably used. The sacrificial film 174 can be formed by various film deposition methods such as sputtering, vapor deposition, CVD, and ALD. In particular, since the ALD method causes little film deposition damage to the layer to be formed, it is preferable to form the sacrificial film 174 directly on the organic film 155f using the ALD method.

[0198] [Deposition of sacrificial film 176] Next, a sacrificial film 176 is deposited on the sacrificial film 174 (Figure 10B).

[0199] The sacrificial film 176 is a film used as a hard mask when etching the sacrificial film 174 later. Also, when processing the sacrificial film 176 later, the sacrificial film 174 will be exposed. Therefore, a combination of films with a high etching selectivity ratio for each other is selected for the sacrificial film 174 and the sacrificial film 176. Thus, depending on the etching conditions for the sacrificial film 174 and the sacrificial film 176, the film that can be used for the sacrificial film 176 can be selected.

[0200] The sacrificial film 176 can be selected from a variety of materials, depending on the etching conditions of the sacrificial film 174 and the sacrificial film 176. For example, it can be selected from films that can be used for the sacrificial film 144.

[0201] For example, it is preferable to use an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide formed by the ALD method as the sacrificial film 174, and an indium-containing metal oxide such as IGZO formed by the sputtering method as the sacrificial film 176. Alternatively, it is preferable to use a metal such as tungsten, molybdenum, copper, aluminum, titanium, or tantalum, or an alloy containing such a metal, as the sacrificial film 176.

[0202] [Formation of resist mask 173] Next, a resist mask 173 is formed on the sacrificial film 176 at a position overlapping with the pixel electrode 111S (Figure 10C). At this time, a resist mask is not formed at positions overlapping with the pixel electrodes 111R, 111G, 111B, and the connecting electrode 111C.

[0203] The resist mask 173 can be made using the same material as the resist mask 143.

[0204] [Etching of sacrificial film 176] Next, the portion of the sacrificial film 176 that is not covered by the resist mask 173 is removed by etching to form island-shaped sacrificial layers 177.

[0205] When etching the sacrificial film 176, it is preferable to use etching conditions with a high selectivity ratio so that the sacrificial film 174 is not removed by the etching. The sacrificial film 176 can be etched by wet etching or dry etching, but using dry etching can suppress the reduction of the pattern of the sacrificial layer 177.

[0206] [Removal of Resist Mask 173] Next, remove the resist mask 173. The resist mask 173 can be removed in the same way as the resist mask 143.

[0207] [Etching of sacrificial film 174] Next, using the sacrificial layer 177 as a hard mask, a portion of the sacrificial film 174 is removed by etching to form island-shaped sacrificial layers 175 (Figure 11A).

[0208] The sacrificial film 174 can be etched by wet etching or dry etching, but dry etching is preferred because it can suppress pattern reduction.

[0209] [Etching of organic film 155f] Next, a portion of the organic film 155f not covered by the sacrificial layer 175 is removed by etching to form island-shaped organic layers 155 (Figure 11B). A slit 120 is also formed between the organic layer 155 and the organic layer 112. At the same time, the upper surfaces of the sacrificial layer 147 and the connecting electrode 111C are exposed.

[0210] Etching of the organic film 155f can be performed in the same manner as etching of the organic film 112f described above.

[0211] As described above, by processing the organic layer 112 and the organic layer 155 using photolithography, the distance between each pixel separated by the slit 120 can be narrowed to 8 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. By narrowing the distance between each pixel in this way, a display device with high resolution and a large aperture ratio can be provided.

[0212] Furthermore, by separating organic layers 112 and 155 with a slit 120, the current leakage path between adjacent organic layers 112 and 155 can be interrupted. This suppresses leakage current between organic layers 112 and 155, enabling high-precision imaging with a high signal-to-noise ratio (S / N ratio). As a result, clear images can be obtained even with weak light. Consequently, the brightness of the light-emitting element used as the light source can be reduced during imaging, thereby reducing power consumption.

[0213] Furthermore, the above process allows for the patterning of the organic layer in a display device in which light-emitting elements and light-receiving elements are mounted together to be completed in two steps. By using the above method, the manufacturing process can be simplified, and the productivity of one embodiment of the present invention can be improved.

[0214] Furthermore, the insulating layer 105 is exposed during etching of the organic film 155f. For this reason, it is preferable to use a film with high resistance to etching of the organic film 155f for the insulating layer 105. In addition, during etching of the organic film 155f, the upper part of the insulating layer 105 may be etched, and the portion not covered by the organic layer 155 may become thinner.

[0215] [Removal of the sacrificial layer] Next, sacrificial layers 147 and 177 are removed, exposing the upper surfaces of sacrificial layers 145 and 175 (Figure 11C). At this point, it is preferable to leave sacrificial layers 145 and 175 in place. Alternatively, sacrificial layers 147 and 177 may not be removed at this stage.

[0216] [Formation of insulating film 125f] Next, an insulating film 125f is formed, covering the sacrificial layer 145, the sacrificial layer 175, and the slit 120.

[0217] The insulating film 125f functions as a barrier layer that prevents impurities such as water from diffusing into the EL layer and the PD layer. Forming the insulating film 125f by the ALD method, which has excellent step coverage, is preferable because it can suitably cover the sides of the EL layer.

[0218] It is preferable to use the same film for the insulating film 125f as for the sacrificial layers 145 and 175, as this allows for simultaneous etching in a later process. For example, it is preferable to use inorganic insulating materials such as aluminum oxide, hafnium oxide, or silicon oxide formed by the ALD method for the insulating film 125f, sacrificial layer 145, and sacrificial layer 175.

[0219] Furthermore, the materials that can be used for the insulating film 125f are not limited to those mentioned above, and any materials that can be used for the sacrificial film 144 can be used as appropriate.

[0220] [Formation of resin layer 126] Next, a resin layer 126 is formed in the region overlapping with the slit 120 (Figure 12A). The resin layer 126 can be formed in the same manner as the resin layer 163. For example, the resin layer 126 can be formed by exposing and developing a photosensitive resin after it has been formed. Alternatively, the resin layer 126 may be formed by etching a portion of the resin after the resin has been formed over the entire surface, such as by ashing.

[0221] Here, we show an example where the resin layer 126 is formed to be wider than the width of the slit 120. Note that the resin layer 126 is provided so as not to cover the connecting electrode 111C.

[0222] [Etching of insulating film 125f, sacrificial layer 145, and sacrificial layer 175] Next, the portions of the insulating film 125f, sacrificial layer 145, and sacrificial layer 175 that are not covered by the resin layer 126 are removed by etching, exposing the upper surfaces of the organic layer 112 and organic layer 155. As a result, the insulating layer 125 and the sacrificial layer 145 or sacrificial layer 175 are formed in the region covered by the resin layer 126 (Figure 12B).

[0223] It is preferable to perform the etching of the insulating film 125f, sacrificial layer 145, and sacrificial layer 175 in the same process. In particular, it is preferable to perform the etching of sacrificial layer 145 and sacrificial layer 175 by wet etching, which causes less etching damage to organic layer 112 and organic layer 155. For example, it is preferable to use wet etching with an aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0224] Alternatively, it is preferable to remove at least one of the insulating film 125f, the sacrificial layer 145, and the sacrificial layer 175 by dissolving it in a solvent such as water or alcohol. Here, various alcohols can be used to dissolve the insulating film 125f, the sacrificial layer 145, and the sacrificial layer 175, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0225] After removing the insulating film 125f, sacrificial layer 145, and sacrificial layer 175, it is preferable to perform a drying treatment to remove water contained inside the organic layer 112 and organic layer 155, etc., and water adsorbed on the surface. For example, it is preferable to perform a heat treatment under an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 120°C. A reduced pressure atmosphere is preferable because it allows drying at a lower temperature.

[0226] By removing the insulating film 125f, the sacrificial layer 145, and the sacrificial layer 175, the upper surface of the connecting electrode 111C is also exposed.

[0227] [Formation of organic layer 114] Next, the organic layer 114 is formed by covering the organic layer 112, organic layer 155, insulating layer 125, sacrificial layer 145, sacrificial layer 175, and resin layer 126, etc.

[0228] The organic layer 114 can be deposited using the same method as the organic film 112f. When depositing the organic layer 114 by vapor deposition, an area mask may be used to prevent the organic layer 114 from being deposited on the connecting electrode 111C.

[0229] [Formation of common electrode 113] Next, the common electrode 113 is formed by covering the organic layer 114.

[0230] The common electrode 113 can be formed by a film deposition method such as vapor deposition or sputtering. Alternatively, a film formed by vapor deposition and a film formed by sputtering may be laminated together.

[0231] It is preferable to form the common electrode 113 so as to encompass the region where the organic layer 114 is formed. That is, the edges of the organic layer 114 can overlap with the common electrode 113. The common electrode 113 may also be formed using an area mask.

[0232] Figure 12C shows an example in which an organic layer 114 is sandwiched between the connecting electrode 111C and the common electrode 113 as the connection portion 130. In this case, it is preferable to use a material with the lowest possible electrical resistance for the organic layer 114. Alternatively, it is preferable to reduce the electrical resistance in the thickness direction of the organic layer 114 by forming it as thin as possible. For example, by using an electron-injection or hole-injection material with a thickness of 1 nm to 5 nm, preferably 1 nm to 3 nm, for the organic layer 114, the electrical resistance between the connecting electrode 111C and the common electrode 113 can be reduced to a negligible level.

[0233] [Formation of a protective layer] Next, a protective layer 121 is formed on the common electrode 113 (Figure 12C). For depositing the inorganic insulating film used in the protective layer 121, sputtering, PECVD, or ALD methods are preferred. The ALD method is particularly preferred because it offers excellent step coverage and is less prone to defects such as pinholes. Furthermore, for depositing the organic insulating film, the inkjet method is preferred because it allows for the formation of a uniform film in the desired area.

[0234] [Formation of opposing substrate] Next, the substrate 102 is bonded onto the protective layer 121 using the resin layer 122. Here, the substrate 102 is provided with colored layers 129R, 129G, and 129B, and the bonding is performed so that the colored layers 129R, 129G, and 129B overlap with the pixel electrodes 111R, 111G, and 111B.

[0235] The colored layers 129R, 129G, and 129B can be formed at desired positions using methods such as inkjet etching or photolithography. Specifically, different colored layers 129 (colored layer 129R, colored layer 129G, or colored layer 129B) can be formed for each pixel.

[0236] Based on the above, the display device shown in Figure 7A can be manufactured.

[0237] Although the organic layer 112 and then the organic layer 155 were formed in the order described above, the formation order is not limited to this. As shown in Figures 13A to 15C, the organic layer 155 and then the organic layer 112 may also be formed in that order. The method for forming the organic layer 155 and then the organic layer 112 is described below.

[0238] As shown in Figure 8A, pixel electrodes are formed, and an organic film 155f is deposited covering the pixel electrodes 111R, 111G, 111B, 111S and the connecting electrode 111C (Figure 13A). For details on the deposition of the organic film 155f, please refer to the description in Figure 10A.

[0239] Subsequently, a sacrificial film 174 is formed covering the organic film 155f. Thereafter, a sacrificial film 176 is formed on the sacrificial film 174 (FIG. 13B). Regarding the formation of the sacrificial film 174 and the sacrificial film 176, the description according to FIG. 10B can be referred to.

[0240] Subsequently, a resist mask 173 is formed on the sacrificial film 176 at a position overlapping with the pixel electrode 111S (FIG. 13C). Regarding the formation of the resist mask 173, the description according to FIG. 10C can be referred to.

[0241] Subsequently, a part of the sacrificial film 176 not covered by the resist mask 173 is removed by etching to form a sacrificial layer 177. Then, the resist mask 173 is removed. Thereafter, using the sacrificial layer 177 as a hard mask, a part of the sacrificial film 174 is removed by etching to form a sacrificial layer 175 (FIG. 14A). Regarding the formation of the sacrificial layer 177 and the sacrificial layer 175, the description according to FIG. 11A can be referred to.

[0242] Subsequently, a part of the organic film 155f not covered by the sacrificial layer 175 is removed by etching to form an organic layer 155 (FIG. 14B). Regarding the formation of the organic layer 155, the description according to FIG. 11B can be referred to.

[0243] Subsequently, an organic film 112f is formed covering the pixel electrodes 111R, 111G, 111B, the sacrificial layer 177, and the connection electrode 111C (FIG. 14C). Regarding the formation of the organic film 112f, the description according to FIG. 8B can be referred to.

[0244] Subsequently, a sacrificial film 144 is formed covering the organic film 112f. Thereafter, a sacrificial film 146 is formed on the sacrificial film 144 (FIG. 15A). Regarding the formation of the sacrificial film 144 and the sacrificial film 146, the description according to FIG. 10C can be referred to.

[0245] Next, a resist mask 143 is formed on the sacrificial film 146 at a position overlapping with the pixel electrodes 111R, 111G, and 111B (Figure 15B). For the formation of the resist mask 143, please refer to the description in Figure 9A.

[0246] Next, a portion of the sacrificial film 146 not covered by the resist mask 143 is removed by etching to form a sacrificial layer 147. Then, the resist mask 143 is removed. After that, using the sacrificial layer 147 as a hard mask, a portion of the sacrificial film 144 is removed by etching to form a sacrificial layer 145 (Figure 15C). For the formation of sacrificial layers 147 and 145, refer to the description in Figure 9B.

[0247] Next, a portion of the organic film 112f not covered by the sacrificial layer 145 is removed by etching to form organic layers 112R, 112G, and 112B. For the formation of organic layers 112R, 112G, and 112B, refer to the description in Figure 9C. In this way, a configuration similar to the display device shown in Figure 11B can be formed. Subsequently, by performing the same process as in Figure 11C and later, the display device shown in Figure 7A can be manufactured.

[0248] Furthermore, although the above example shows a case where the resin layer 126 is formed to be wider than the slit 120, the resin layer 126 may be formed to be the same width as the slit 120.

[0249] Figure 16A is a schematic cross-sectional view of the point in time when the resin layer 126 is formed after the insulating film 125f has been formed.

[0250] For example, as shown in Figure 12A, by forming a resin layer 126 wider than the slit 120 and then etching the upper part of the resin layer 126 by ashing or the like, the resin layer 126 can be formed only inside the slit 120. In this case, it is preferable to bring the upper surface of the resin layer 126 as close as possible to the height of the upper surface of the adjacent organic layer 112 or organic layer 155. This reduces the step difference at both ends of the portion that overlaps with the slit 120, and improves the step coverage of the organic layer 112 or organic layer 155.

[0251] Next, the insulating film 125f, sacrificial layer 145, and sacrificial layer 175 are etched in the same manner as described above (Figure 16B). At this time, since there is no portion of the sacrificial layer 145 and sacrificial layer 175 that is covered by the resin layer 126, the sacrificial layer 145 and sacrificial layer 175 are removed without leaving any fragments.

[0252] Next, the organic layer 114, the common electrode 113, and the protective layer 121 are formed in the same manner as described above (Figure 16C). Furthermore, the display device can be fabricated by bonding the substrate 102 in the same manner as described above.

[0253] The above is an explanation of an example of a method for manufacturing a display device.

[0254] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0255] (Embodiment 2) This embodiment describes an example of the configuration of a display device according to one aspect of the present invention. Here, it is described as a display device capable of displaying images, but it can be used as a display device by using a light-emitting element as a light source.

[0256] Furthermore, the display device of this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, smartphones, smartwatches, tablet devices, personal digital assistants, and audio playback devices.

[0257] [Display device 400] Figure 17 shows a perspective view of the display device 400, and Figure 18A shows a cross-sectional view of the display device 400.

[0258] The display device 400 has a configuration in which substrate 454 and substrate 453 are bonded together. In Figure 17, substrate 454 is clearly indicated by a dashed line.

[0259] The display device 400 includes a display unit 462, a circuit 464, wiring 465, etc. Figure 17 shows an example in which IC 473 and FPC 472 are mounted on the display device 400. Therefore, the configuration shown in Figure 18 can also be described as a display module having the display device 400, an IC (integrated circuit), and an FPC.

[0260] For example, a scan line drive circuit can be used as circuit 464.

[0261] Wiring 465 has the function of supplying signals and power to the display unit 462 and the circuit 464. These signals and power are input to wiring 465 from an external source via FPC 472 or from IC 473.

[0262] FIG. 17 shows an example in which an IC 473 is provided on a substrate 453 by a COG (Chip On Glass) method, a COF (Chip On Film) method, or the like. The IC 473 can be an IC having, for example, a scanning line driving circuit or a signal line driving circuit. Note that the display device 400 and the display module may be configured not to have an IC. Also, the IC may be mounted on an FPC by a COF method or the like.

[0263] FIG. 18A shows an example of a cross-section when a part of the region including the FPC 472, a part of the circuit 464, a part of the display unit 462, and a part of the region including the connection unit of the display device 400 are each cut. In FIG. 18A, an example of a cross-section when a region including a light-emitting element 430b that emits green light (G) and a light-receiving element 440 that receives reflected light (L) in the display unit 462 is cut is shown.

[0264] The display device 400 shown in FIG. 18A has a transistor 252, a transistor 260, a transistor 258, a light-emitting element 430b, a coloring layer 418, a light-receiving element 440, etc. between a substrate 453 and a substrate 454.

[0265] Here, the light-emitting element 430b can use the light-emitting element 110G shown in Embodiment 1, the coloring layer 418 can use the coloring layer 129G shown in Embodiment 1, and the light-receiving element 440 can use the light-receiving element 110S shown in Embodiment 1. Also, although light-emitting elements corresponding to the light-emitting elements 110R, 110B, etc. are not shown in FIG. 18A, they can be provided in the same manner as the light-emitting element 430b. Also, although coloring layers corresponding to the coloring layers 129R, 129B, etc. are not shown in FIG. 18A, they can be provided in the same manner as the coloring layer 418.

[0266] Here, if the pixels of the display device have three types of subpixels having colored layers that transmit different colors from each other, examples of such three subpixels include subpixels of three colors: red (R), green (G), and blue (B); and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). If there are four such subpixels, examples of such four subpixels include subpixels of four colors: R, G, B, and white (W); and subpixels of four colors: R, G, B, and Y.

[0267] Furthermore, the photodetector 440 can be a photoelectric conversion element sensitive to light in the red, green, or blue wavelength range, or a photoelectric conversion element sensitive to light in the infrared wavelength range.

[0268] The substrate 454 and the protective layer 416 are bonded together via an adhesive layer 442. The adhesive layer 442 is provided in superimposed on the light-emitting element 430b and the light-receiving element 440, and a solid encapsulation structure is applied to the display device 400. A light-shielding layer 417 is provided on the substrate 454.

[0269] The light-emitting element 430b and the light-receiving element 440 have conductive layers 411a, 411b, and 411c as pixel electrodes. Conductive layer 411b is reflective to visible light and functions as a reflective electrode. Conductive layer 411c is transparent to visible light and functions as an optical adjustment layer. The common electrode 413 is also transparent to visible light.

[0270] The conductive layer 411a of the light-emitting element 430b is connected to the conductive layer 272b of the transistor 260 through an opening provided in the insulating layer 294. The transistor 260 has the function of controlling the driving of the light-emitting element. On the other hand, the conductive layer 411a of the photodetector element 440 is electrically connected to the conductive layer 272b of the transistor 258. The transistor 258 has the function of controlling the exposure timing using the photodetector element 440.

[0271] An EL layer 412G or a PD layer 412S is provided covering the pixel electrodes. An insulating layer 421 is provided in contact with the side surfaces of the EL layer 412G and the PD layer 412S, and a resin layer 422 is provided to fill the recesses of the insulating layer 421. An organic layer 414, a common electrode 413, and a protective layer 416 are provided covering the EL layer 412G and the PD layer 412S. By providing a protective layer 416 covering the light-emitting element, it is possible to suppress the ingress of impurities such as water into the light-emitting element and improve the reliability of the light-emitting element.

[0272] The light G emitted by the light-emitting element 430b passes through the colored layer 418 and is emitted towards the substrate 454. The light-receiving element 440 receives the light L incident through the substrate 454 and converts it into an electrical signal. Here, light L also includes light G that is reflected outside the substrate 454. It is preferable to use a material with high transmittance to visible light for the substrate 454.

[0273] Transistors 252, 260, and 258 are all formed on the substrate 453. These transistors can be manufactured using the same materials and processes.

[0274] Furthermore, transistors 252, 260, and 258 may be manufactured to have different configurations. For example, transistors may be manufactured with or without a back gate, or transistors may be manufactured with different materials or thicknesses for the semiconductor, gate electrode, gate insulating layer, source electrode, and drain electrode, or both.

[0275] The substrate 453 and the insulating layer 262 are bonded together by an adhesive layer 455.

[0276] The method for manufacturing the display device 400 involves first bonding a fabricated substrate, on which an insulating layer 262, transistors, light-emitting elements, and light-receiving elements are provided, to a substrate 454 on which a light-shielding layer 417 is provided, using an adhesive layer 442. Then, the fabricated substrate is peeled off and a substrate 453 is attached to the exposed surface, thereby transferring the components formed on the fabricated substrate to the substrate 453. It is preferable that both the substrate 453 and the substrate 454 are flexible. This increases the flexibility of the display device 400.

[0277] A connection portion 254 is provided in the region of substrate 453 that does not overlap with substrate 454. At the connection portion 254, wiring 465 is electrically connected to FPC 472 via conductive layer 466 and connection layer 292. The conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. This allows the connection portion 254 and FPC 472 to be electrically connected via the connection layer 292.

[0278] Transistors 252, 260, and 258 each have a conductive layer 271 that functions as a gate, an insulating layer 261 that functions as a gate insulating layer, a semiconductor layer 281 having a channel forming region 281i and a pair of low-resistance regions 281n, a conductive layer 272a connected to one of the pair of low-resistance regions 281n, a conductive layer 272b connected to the other of the pair of low-resistance regions 281n, an insulating layer 275 that functions as a gate insulating layer, a conductive layer 273 that functions as a gate, and an insulating layer 265 covering the conductive layer 273. The insulating layer 261 is located between the conductive layer 271 and the channel forming region 281i. The insulating layer 275 is located between the conductive layer 273 and the channel forming region 281i.

[0279] The conductive layer 272a and the conductive layer 272b are each connected to the low-resistance region 281n via openings provided in the insulating layer 265. Of the conductive layer 272a and the conductive layer 272b, one functions as a source and the other functions as a drain.

[0280] Figure 18A shows an example in which the insulating layer 275 covers the top and sides of the semiconductor layer. The conductive layer 272a and conductive layer 272b are connected to the low-resistance region 281n through openings provided in the insulating layer 275 and insulating layer 265, respectively.

[0281] On the other hand, in the transistor 259 shown in Figure 18B, the insulating layer 275 overlaps with the channel formation region 281i of the semiconductor layer 281, but does not overlap with the low-resistance region 281n. For example, the structure shown in Figure 18B can be fabricated by processing the insulating layer 275 using the conductive layer 273 as a mask. In Figure 18B, an insulating layer 265 is provided covering the insulating layer 275 and the conductive layer 273, and the conductive layers 272a and 272b are connected to the low-resistance region 281n, respectively, through openings in the insulating layer 265. Furthermore, an insulating layer 268 covering the transistor may also be provided.

[0282] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0283] Transistors 252, 260, and 258 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0284] The crystallinity of the semiconductor material used in the semiconductor layer of the transistor is not particularly limited; amorphous semiconductors, single-crystal semiconductors, or semiconductors with crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors having crystalline regions in part) may be used. Using a single-crystal semiconductor or a semiconductor with crystalline properties is preferable because it can suppress the degradation of transistor characteristics.

[0285] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region.

[0286] The band gap of the metal oxide used in the semiconductor layer of the transistor is preferably 2 eV or more, and more preferably 2.5 eV or more. By using a metal oxide with a large band gap, the off-current of the OS transistor can be reduced.

[0287] The metal oxide preferably contains at least indium or zinc, and more preferably indium and zinc. For example, the metal oxide preferably contains indium, M (where M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, and gallium is more preferred. A metal oxide containing indium, M, and zinc may hereafter be referred to as In-M-Zn oxide.

[0288] When the metal oxide is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is equal to or greater than the atomic ratio of M. Examples of such In-M-Zn oxide atomic ratios of metal elements include compositions where In:M:Zn=1:1:1 or close to it, In:M:Zn=1:1:1.2 or close to it, In:M:Zn=2:1:3 or close to it, In:M:Zn=3:1:2 or close to it, In:M:Zn=4:2:3 or close to it, In:M:Zn=4:2:4.1 or close to it, In:M:Zn=5:1:3 or close to it, In:M:Zn=5:1:6 or close to it, In:M:Zn=5:1:7 or close to it, In:M:Zn=5:1:8 or close to it, In:M:Zn=6:1:6 or close to it, In:M:Zn=5:2:5 or close to it, and so on. Note that "close to it" compositions include a range of ±30% of the desired atomic ratio. By increasing the atomic ratio of indium in a metal oxide, the on-current or field-effect mobility of a transistor can be increased.

[0289] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when In is set to 4, Ga is between 1 and 3, and Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when In is set to 5, Ga is greater than 0.1 and 2 or less, and Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when In is set to 1, Ga is greater than 0.1 and 2 or less, and Zn is greater than 0.1 and 2 or less.

[0290] Furthermore, the atomic ratio of In in an In-M-Zn oxide may be less than the atomic ratio of M. Examples of such atomic ratios of metal elements in an In-M-Zn oxide include compositions where In:M:Zn = 1:3:2 or close to it, In:M:Zn = 1:3:3 or close to it, In:M:Zn = 1:3:4 or close to it, etc. By increasing the atomic ratio of M in the metal oxide, it is possible to increase the band gap of the In-M-Zn oxide and improve its resistance to photonegative bias stress testing. Specifically, it is possible to reduce the change in threshold voltage or the change in shift voltage (Vsh) measured in the NBTIS (Negative Bias Temperature Illumination Stress) test of a transistor. Note that the shift voltage (Vsh) is defined as the Vg at which the tangent line at the point where the slope of the drain current (Id)-gate voltage (Vg) curve is maximum intersects the straight line where Id = 1 pA.

[0291] Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon (also known as LTPS) and single-crystal silicon).

[0292] Low-temperature polysilicon, in particular, has relatively high mobility and can be formed on a glass substrate, making it suitable for use in display devices. For example, transistors using low-temperature polysilicon as the semiconductor layer (LTPS transistors) can be applied to transistors 252 in the drive circuit, while transistors using oxide semiconductors as the semiconductor layer (OS transistors) can be applied to transistors 260 and 258 provided in the pixels. By using both LTPS transistors and OS transistors, a display device with low power consumption and high driving capability can be realized. Furthermore, a configuration combining LTPS transistors and OS transistors is sometimes referred to as LTPO. In addition, a more preferable example is to apply OS transistors to transistors that function as switches to control conduction and non-conductivity between wiring, and to apply LTPS transistors to transistors that control current.

[0293] Alternatively, the semiconductor layer of a transistor may have a layered material that functions as a semiconductor. A layered material is a general term for a group of materials having a layered crystalline structure. A layered crystalline structure is a structure in which layers formed by covalent or ionic bonds are stacked via weaker bonds than covalent or ionic bonds, such as van der Waals forces. Layered materials have high electrical conductivity within a unit layer, that is, high two-dimensional electrical conductivity. By using a material that functions as a semiconductor and has high two-dimensional electrical conductivity in the channel formation region, a transistor with a large on-current can be provided.

[0294] Examples of the above-mentioned layered materials include graphene, silicene, and chalcogenides. Chalcogenides are compounds containing chalcogens (elements belonging to Group 16). Examples of chalcogenides include transition metal chalcogenides and Group 13 chalcogenides. Specific examples of transition metal chalcogenides applicable as semiconductor layers in transistors include molybdenum sulfide (typically MoS2), molybdenum selenide (typically MoSe2), molybdenum tellurium (typically MoTe2), tungsten sulfide (typically WS2), tungsten selenide (typically WSe2), tungsten tellurium (typically WTe2), hafnium sulfide (typically HfS2), hafnium selenide (typically HfSe2), zirconium sulfide (typically ZrS2), and zirconium selenide (typically ZrSe2).

[0295] The display device shown in Figure 18A has an OS transistor and a configuration in which the common layer between light-emitting elements is separated. This configuration makes it possible to extremely low the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting elements (also called lateral leakage current or side leakage current). Furthermore, with this configuration, when an image is displayed on the display device, the observer can observe one or more of the following: image sharpness, image clarity, high saturation, and high contrast ratio. Moreover, by having an extremely low leakage current that can flow through the transistor and lateral leakage current between light-emitting elements, it is possible to achieve a display (also called true black display) with as little light leakage (so-called black floating) that can occur when displaying black as possible.

[0296] In particular, among light-emitting devices with an MML structure, applying a color-blocking structure (SBS structure) results in a configuration where the layers provided between light-emitting elements (for example, an organic layer used in common between light-emitting elements, also called a common layer) are separated, making it possible to achieve a display with no side leakage or extremely low side leakage.

[0297] The transistors in circuit 464 and the transistors in display unit 462 may have the same structure or different structures. The structures of the multiple transistors in circuit 464 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in display unit 462 may all be the same or there may be two or more different structures.

[0298] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0299] It is preferable to use an inorganic insulating film for insulating layer 261, insulating layer 262, insulating layer 265, insulating layer 268, and insulating layer 275. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxynitride film, silicon oxide film, silicon nitride film, aluminum oxide film, and aluminum nitride film. Alternatively, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may also be used. Furthermore, two or more of the above-mentioned inorganic insulating films may be laminated together.

[0300] An organic insulating film is preferred for the insulating layer 294, which functions as a planarizing layer. Examples of materials that can be used as the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimidoamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins.

[0301] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 400. This prevents impurities from entering through the organic insulating film from the edge of the display device 400. Alternatively, the organic insulating film may be formed so that its edge is inside the edge of the display device 400, so that the organic insulating film is not exposed at the edge of the display device 400.

[0302] It is preferable to provide a light-shielding layer 417 on the surface of substrate 454 that faces substrate 453. Alternatively, a colored layer 418 or the like may be provided on the surface of substrate 454 that faces substrate 453. In Figure 18A, when viewed with respect to substrate 454, the colored layer 418 is provided so as to cover a portion of the light-shielding layer 417.

[0303] Furthermore, various optical components can be placed on the outside of the substrate 454. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-gathering films. Additionally, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may be placed on the outside of the substrate 454.

[0304] Figure 18A shows the connection section 278. At the connection section 278, the common electrode 413 and the wiring are electrically connected. Figure 18A shows an example where the same stacked structure as the pixel electrode is applied as the wiring.

[0305] Substrates 453 and 454 can be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, etc., respectively. The substrate on the side that extracts light from the light-emitting element should be made of a material that transmits the light. If flexible materials are used for substrates 453 and 454, the flexibility of the display device can be increased, and a flexible display can be realized. Alternatively, a polarizing plate may be used as substrate 453 or substrate 454.

[0306] Substrates 453 and 454 can be made from polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 453 and 454 may be made of glass of a thickness sufficient to provide flexibility.

[0307] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0308] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0309] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0310] Furthermore, when using a film as the substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0311] Various types of curing adhesives can be used as the adhesive layer, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0312] As the connecting layer 292, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), etc., can be used.

[0313] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0314] Furthermore, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used as the light-transmitting conductive material. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers of various wirings and electrodes that constitute a display device, and for conductive layers of light-emitting elements (conductive layers that function as pixel electrodes or common electrodes).

[0315] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0316] Figure 18A shows a top-emission type display device, but the present invention is not limited to this. As shown in Figure 19, a bottom-emission type display device may also be used. The display device 400 shown in Figure 19 differs from the display device 400 in Figure 18A mainly in that it is a bottom-emission type. The same parts as the display device 400 in Figure 18A will not be explained.

[0317] The light G emitted by the light-emitting element 430b passes through the colored layer 418 and is emitted towards the substrate 453. The light-receiving element 440 receives the light L incident through the substrate 453 and converts it into an electrical signal. It is preferable to use a material with high transmittance to visible light for the substrate 453. On the other hand, the light transmittance of the material used for the substrate 454 is not a requirement.

[0318] Furthermore, the display device 400 shown in Figure 19 includes conductive layers 411a, 411b, and 411c made of a material that transmits visible light, and a common electrode 413 made of a material that reflects visible light. Here, the conductive layer 466 and the connecting layer 292, which are obtained by processing the same conductive film as the conductive layers 411a and 411b, also include a material that transmits visible light.

[0319] It is preferable to form a light-shielding layer 417 between the substrate 453 and the transistor 260, and between the substrate 453 and the transistor 252. Figure 19 shows an example in which a light-shielding layer 417 is provided on the adhesive layer 455, an insulating layer 262 is provided on the light-shielding layer 417, and transistors 260, 252, etc. are provided on the insulating layer 262.

[0320] Furthermore, in the display device 400 shown in Figure 19, a colored layer 418 is provided between the insulating layer 294 and the insulating layer 265. Preferably, the edges of the colored layer 418 overlap with the light-shielding layer 417.

[0321] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0322] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0323] (Embodiment 3) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 20 to 25.

[0324] The display device of this embodiment can be a high-definition display device. Therefore, the display device of this embodiment can be used in the display section of wearable devices that can be worn on the head, such as information terminals (wearable devices) such as wristwatches and bracelets, as well as VR (Virtual Reality) devices such as head-mounted displays and AR (Augmented Reality) devices such as glasses.

[0325] [Display Module] Figure 20A shows a perspective view of the display module 1280. The display module 1280 includes a display device 100C and an FPC 1290. Note that the display device included in the display module 1280 is not limited to the display device 100C, but may be any of the display devices 100D to 100G described later.

[0326] The display module 1280 has substrates 1291 and 1292. The display module 1280 has a display unit 1281. The display unit 1281 is an area in the display module 1280 that displays an image, and is an area in which light from each pixel provided in the pixel unit 1284, which will be described later, can be seen.

[0327] Figure 20B shows a schematic perspective view illustrating the configuration of the substrate 1291. On the substrate 1291, a circuit section 1282, a pixel circuit section 1283 on the circuit section 1282, and a pixel section 1284 on the pixel circuit section 1283 are stacked. In addition, a terminal section 1285 for connecting to the FPC 1290 is provided in the portion of the substrate 1291 that does not overlap with the pixel section 1284. The terminal section 1285 and the circuit section 1282 are electrically connected by a wiring section 1286 composed of multiple wires.

[0328] The pixel section 1284 has multiple pixels 1284a arranged periodically. A magnified view of one pixel 1284a is shown on the right side of Figure 20B. Pixel 1284a has sub-pixels 103R, 103G, 103B, and 103S. The configuration of sub-pixels 103R, 103G, 103B, and 103S, as well as their surroundings, can be referenced from the previous embodiment. Multiple sub-pixels can be arranged in a matrix array as shown in Figure 20B. In addition, various sub-pixel arrangement methods such as a delta array or a pentile array can be applied.

[0329] The pixel circuit section 1283 has a plurality of pixel circuits 1283a arranged periodically.

[0330] A single pixel circuit 1283a is a circuit that controls the light emission of three light-emitting devices in a single pixel 1284a. A single pixel circuit 1283a may also be configured to have three circuits that control the light emission of a single light-emitting device. For example, a single pixel circuit 1283a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitive element for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to either the source or the drain. This realizes an active-matrix type display device.

[0331] The circuit section 1282 has circuits for driving each pixel circuit 1283a of the pixel circuit section 1283. For example, it is preferable to have one or both of a gate line drive circuit and a source line drive circuit. In addition, it may have at least one of the following: an arithmetic circuit, a memory circuit, and a power supply circuit.

[0332] The FPC1290 functions as wiring for supplying video signals or power potential, etc., to the circuit unit 1282 from an external source. An IC may also be mounted on the FPC1290.

[0333] The display module 1280 can be configured such that one or both of the pixel circuit section 1283 and the circuit section 1282 are stacked on the lower side of the pixel section 1284, thereby enabling an extremely high aperture ratio (effective display area ratio) of the display section 1281. For example, the aperture ratio of the display section 1281 can be 40% or more and less than 100%, preferably 50% or more and 95%, and more preferably 60% or more and 95%. Furthermore, it is possible to arrange the pixels 1284a at an extremely high density, enabling an extremely high resolution of the display section 1281. For example, it is preferable that the pixels 1284a are arranged in the display section 1281 with a resolution of 20000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and a resolution of 20000 ppi or less, or 30000 ppi or less.

[0334] Because of its extremely high resolution, the display module 1280 is suitable for use in VR devices such as head-mounted displays, or in glasses-type AR devices. For example, even in a configuration where the display unit of the display module 1280 is viewed through lenses, the display module 1280 has an extremely high-resolution display unit 1281, so even when the display unit is magnified with lenses, pixels are not visible, enabling a highly immersive display. Furthermore, the display module 1280 is not limited to this and can be suitably used in electronic devices with relatively small display units. For example, it can be suitably used in the display unit of wearable electronic devices such as wristwatches.

[0335] [Display device 100C] The display device 100C shown in Figure 21 has a substrate 1301, sub-pixels 103R, 103G, 103S, a capacitor 1240, and a transistor 1310. Sub-pixel 103R has a light-emitting element 110R and a coloring layer 129R, sub-pixel 103G has a light-emitting element 110G and a coloring layer 129G, and sub-pixel 103S has a light-receiving element 110S. Although sub-pixel 103B is not shown in Figure 21, sub-pixel 103B can be provided with the same configuration as sub-pixels 103R and 103G.

[0336] Substrate 1301 corresponds to substrate 1291 in Figures 20A and 20B. The laminated structure from substrate 1301 to insulating layer 1255b corresponds to substrate 101 in Embodiment 1.

[0337] The transistor 1310 is a transistor having a channel-forming region in the substrate 1301. The substrate 1301 can be a semiconductor substrate such as a single-crystal silicon substrate. The transistor 1310 comprises a portion of the substrate 1301, a conductive layer 1311, a low-resistance region 1312, an insulating layer 1313, and an insulating layer 1314. The conductive layer 1311 functions as a gate electrode. The insulating layer 1313 is located between the substrate 1301 and the conductive layer 1311 and functions as a gate insulating layer. The low-resistance region 1312 is a region of the substrate 1301 doped with impurities and functions as either a source or a drain. The insulating layer 1314 is provided covering the side surface of the conductive layer 1311.

[0338] Furthermore, an element isolation layer 1315 is provided between two adjacent transistors 1310 so as to be embedded in the substrate 1301.

[0339] Furthermore, an insulating layer 1261 is provided covering the transistor 1310, and a capacitance 1240 is provided on the insulating layer 1261.

[0340] Capacitor 1240 has a conductive layer 1241, a conductive layer 1245, and an insulating layer 1243 located between them. The conductive layer 1241 functions as one electrode of the capacitor 1240, the conductive layer 1245 functions as the other electrode of the capacitor 1240, and the insulating layer 1243 functions as the dielectric of the capacitor 1240.

[0341] The conductive layer 1241 is provided on the insulating layer 1261 and embedded in the insulating layer 1254. The conductive layer 1241 is electrically connected to either the source or drain of the transistor 1310 by a plug 1271 embedded in the insulating layer 1261. The insulating layer 1243 is provided covering the conductive layer 1241. The conductive layer 1245 is provided in the region that overlaps with the conductive layer 1241 via the insulating layer 1243.

[0342] An insulating layer 1255a is provided covering the capacitance 1240, an insulating layer 1255b is provided on the insulating layer 1255a, and light-emitting elements 110R, 110G, and light-receiving elements 110S, etc. are provided on the insulating layer 1255b. In this embodiment, an example is shown in which the light-emitting elements 110R, 110G, and light-receiving elements 110S have the stacked structure shown in Figure 2C. However, the end of the pixel electrode 111 roughly coincides with the end of the organic layer 112 or the end of the organic layer 155, similar to Figure 2B. The sides of the pixel electrodes 111R, 111G, 111S, organic layers 112R, 112G, and organic layer 155 are covered by an insulating layer 125 and a resin layer 126, respectively. An organic layer 114 is provided on organic layers 112R, 112G, organic layer 155, insulating layer 125, and resin layer 126, and a common electrode 113 is provided on the organic layer 114. A protective layer 121 is provided on the light-emitting elements 110R, 110G, and light-receiving elements 110S. Coloring layers 129R and 129G are provided on the protective layer 121. The substrate 102 is bonded to the coloring layers 129R and 129G by a resin layer 122. Details of the components from the light-emitting device to the substrate 102 can be found in Embodiment 1. The substrate 102 corresponds to the substrate 1292 in Figure 20A.

[0343] Various inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride-oxide insulating films can be suitably used as insulating layers 1255a and 1255b, respectively. For insulating layer 1255a, it is preferable to use an oxide insulating film or oxidative nitride insulating film such as a silicon oxide film, silicon oxidative nitride film, or aluminum oxide film. For insulating layer 1255b, it is preferable to use a nitride insulating film or oxidative nitride insulating film such as a silicon nitride film or silicon nitride-oxide film. More specifically, it is preferable to use a silicon oxide film as insulating layer 1255a and a silicon nitride film as insulating layer 1255b. It is preferable that insulating layer 1255b functions as an etching protective film. Alternatively, a nitride insulating film or nitride-oxide insulating film may be used as insulating layer 1255a, and an oxide insulating film or oxidative nitride insulating film may be used as insulating layer 1255b. In this embodiment, an example is shown in which a recess is provided in insulating layer 1255b, but the insulating layer 1255b does not necessarily have to have a recess.

[0344] The pixel electrodes of the light-emitting device are electrically connected to either the source or drain of the transistor 1310 by plugs 1256 embedded in insulating layers 1255a and 1255b, a conductive layer 1241 embedded in insulating layer 1254, and a plug 1271 embedded in insulating layer 1261. The height of the top surface of insulating layer 1255b and the height of the top surface of plug 1256 are equal or approximately equal. Various conductive materials can be used for the plugs.

[0345] [Display device 100D] The display device 100D shown in Figure 22 differs from the display device 100C mainly in its transistor configuration. Note that explanations of parts similar to those of the display device 100C may be omitted.

[0346] Transistor 1320 is an OS transistor in which a metal oxide (also called an oxide semiconductor) is applied to the semiconductor layer where the channel is formed.

[0347] The transistor 1320 has a semiconductor layer 1321, an insulating layer 1323, a conductive layer 1324, a pair of conductive layers 1325, an insulating layer 1326, and a conductive layer 1327.

[0348] Substrate 1331 corresponds to substrate 1291 in Figures 20A and 20B. The laminated structure from substrate 1331 to insulating layer 1255b corresponds to substrate 101. Substrate 1331 can be an insulating substrate or a semiconductor substrate.

[0349] An insulating layer 1332 is provided on the substrate 1331. The insulating layer 1332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 1331 to the transistor 1320, and prevents oxygen from detaching from the semiconductor layer 1321 to the insulating layer 1332. As the insulating layer 1332, for example, a film that is less permeable to hydrogen or oxygen than a silicon oxide film can be used, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0350] A conductive layer 1327 is provided on an insulating layer 1332, and an insulating layer 1326 is provided covering the conductive layer 1327. The conductive layer 1327 functions as the first gate electrode of the transistor 1320, and a portion of the insulating layer 1326 functions as the first gate insulating layer. It is preferable to use an oxide insulating film, such as a silicon oxide film, for at least the portion of the insulating layer 1326 that is in contact with the semiconductor layer 1321. It is preferable that the upper surface of the insulating layer 1326 is flattened.

[0351] The semiconductor layer 1321 is provided on the insulating layer 1326. Preferably, the semiconductor layer 1321 has a metal oxide (also called an oxide semiconductor) film having semiconductor properties. Details of materials suitable for use in the semiconductor layer 1321 will be described later.

[0352] A pair of conductive layers 1325 are provided in contact with the semiconductor layer 1321 and function as source and drain electrodes.

[0353] Furthermore, an insulating layer 1328 is provided covering the top and side surfaces of the pair of conductive layers 1325, as well as the side surfaces of the semiconductor layer 1321, and an insulating layer 1264 is provided on the insulating layer 1328. The insulating layer 1328 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the semiconductor layer 1321 from the insulating layer 1264, etc., and to prevent oxygen from detaching from the semiconductor layer 1321. As the insulating layer 1328, an insulating film similar to that of the insulating layer 1332 can be used.

[0354] An opening is provided in the insulating layer 1328 and the insulating layer 1264 that reaches the semiconductor layer 1321. Inside this opening, the insulating layer 1323 and the conductive layer 1324 are embedded, in contact with the sides of the insulating layer 1264, the insulating layer 1328, and the conductive layer 1325, as well as the upper surface of the semiconductor layer 1321. The conductive layer 1324 functions as a second gate electrode, and the insulating layer 1323 functions as a second gate insulating layer.

[0355] The upper surfaces of the conductive layer 1324, the insulating layer 1323, and the insulating layer 1264 are flattened so that their heights are the same or approximately the same, and the insulating layer 1329 and insulating layer 1265 are provided covering them.

[0356] Insulating layers 1264 and 1265 function as interlayer insulating layers. Insulating layer 1329 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the transistor 1320 from insulating layer 1265, etc. As insulating layer 1329, an insulating film similar to that used for insulating layers 1328 and 1332 can be used.

[0357] A plug 1274, which is electrically connected to one of the pair of conductive layers 1325, is provided so as to be embedded in the insulating layers 1265, 1329, and 1264. Here, it is preferable that the plug 1274 has a conductive layer 1274a that covers the sides of the openings of each of the insulating layers 1265, 1329, 1264, and 1328, and a part of the upper surface of the conductive layer 1325, and a conductive layer 1274b that is in contact with the upper surface of the conductive layer 1274a. In this case, it is preferable to use a conductive material that does not easily allow hydrogen and oxygen to diffuse as the conductive layer 1274a.

[0358] The configuration from the insulating layer 1254 to the substrate 102 in the display device 100D is the same as that of the display device 100C.

[0359] [Display device 100E] The display device 100E shown in Figure 23 has a configuration in which a transistor 1310 with a channel formed on a substrate 1301 and a transistor 1320 containing a metal oxide in the semiconductor layer where the channel is formed are stacked. Note that parts that are the same as those of display devices 100C and 100D may be omitted from the explanation.

[0360] An insulating layer 1261 is provided covering transistor 1310, and a conductive layer 1251 is provided on the insulating layer 1261. An insulating layer 1262 is provided covering conductive layer 1251, and a conductive layer 1252 is provided on the insulating layer 1262. Conductive layers 1251 and 1252 each function as wiring. Insulating layers 1263 and 1332 are provided covering conductive layer 1252, and transistor 1320 is provided on the insulating layer 1332. Insulating layer 1265 is provided covering transistor 1320, and a capacitor 1240 is provided on the insulating layer 1265. Capacitor 1240 and transistor 1320 are electrically connected by a plug 1274.

[0361] Transistor 1320 can be used as a transistor constituting a pixel circuit. Transistor 1310 can also be used as a transistor constituting a pixel circuit, or as a transistor constituting a drive circuit (gate line drive circuit, source line drive circuit) for driving the pixel circuit. Furthermore, transistors 1310 and 1320 can be used as transistors constituting various circuits such as arithmetic circuits or memory circuits.

[0362] This configuration allows for the formation of not only pixel circuits but also drive circuits directly beneath the light-emitting device, making it possible to miniaturize the display device compared to cases where the drive circuits are located around the display area.

[0363] [Display device 100F] The display device 100F shown in Figure 24 has a configuration in which transistors 1310A and 1310B, each with a channel formed on a semiconductor substrate, are stacked.

[0364] The display device 100F has a configuration in which a substrate 1301B on which transistor 1310B, capacitor 1240 and each light-emitting device are provided, and a substrate 1301A on which transistor 1310A is provided are bonded together.

[0365] Here, it is preferable to provide an insulating layer 1345 on the underside of substrate 1301B. It is also preferable to provide an insulating layer 1346 on top of the insulating layer 1261 provided on substrate 1301A. Insulating layers 1345 and 1346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into substrates 1301B and 1301A. As insulating layers 1345 and 1346, inorganic insulating films that can be used for protective layer 121 or insulating layer 1332 can be used.

[0366] The substrate 1301B is provided with a plug 1343 that penetrates both the substrate 1301B and the insulating layer 1345. Here, it is preferable to provide an insulating layer 1344 covering the sides of the plug 1343. The insulating layer 1344 is an insulating layer that functions as a protective layer and can suppress the diffusion of impurities into the substrate 1301B. As the insulating layer 1344, an inorganic insulating film that can be used for the protective layer 121 or the insulating layer 1332 can be used.

[0367] Furthermore, a conductive layer 1342 is provided on the back side of the substrate 1301B (the side opposite to the substrate 102 side), beneath the insulating layer 1345. Preferably, the conductive layer 1342 is provided so as to be embedded in the insulating layer 1335. Also, preferably, the undersides of the conductive layer 1342 and the insulating layer 1335 are flattened. Here, the conductive layer 1342 is electrically connected to the plug 1343.

[0368] On the other hand, the substrate 1301A has a conductive layer 1341 provided on an insulating layer 1346. Preferably, the conductive layer 1341 is provided so as to be embedded in the insulating layer 1336. Furthermore, it is preferable that the upper surfaces of the conductive layer 1341 and the insulating layer 1336 are flattened.

[0369] The conductive layer 1341 and the conductive layer 1342 are bonded together, thereby electrically connecting the substrate 1301A and the substrate 1301B. Here, by improving the flatness of the surface formed by the conductive layer 1342 and the insulating layer 1335, and the surface formed by the conductive layer 1341 and the insulating layer 1336, the bonding of the conductive layer 1341 and the conductive layer 1342 can be improved.

[0370] It is preferable to use the same conductive material for conductive layer 1341 and conductive layer 1342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) composed of the above elements can be used. In particular, it is preferable to use copper for conductive layer 1341 and conductive layer 1342. This makes it possible to apply Cu-Cu (copper-copper) direct bonding technology (a technology that achieves electrical conductivity by connecting Cu (copper) pads to each other).

[0371] [Display device 100G] Figure 24 shows an example in which Cu-Cu direct bonding technology is used to bond conductive layer 1341 and conductive layer 1342, but the present invention is not limited to this. As shown in Figure 25, in the display device 100G, conductive layer 1341 and conductive layer 1342 may be bonded via bump 1347.

[0372] As shown in Figure 25, the conductive layer 1341 and the conductive layer 1342 can be electrically connected by providing a bump 1347 between them. The bump 1347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), or tin (Sn). Solder may also be used as the bump 1347. An adhesive layer 1348 may also be provided between the insulating layer 1345 and the insulating layer 1346. Furthermore, when the bump 1347 is provided, the insulating layer 1335 and the insulating layer 1336 may be omitted.

[0373] This embodiment can be combined with other embodiments as appropriate.

[0374] (Embodiment 4) This embodiment describes a display device according to one aspect of the present invention.

[0375] A display device according to one aspect of the present invention includes a light-receiving element (also called a light-receiving device) and a light-emitting element (also called a light-emitting device).

[0376] First, a display device having a light-receiving element and a light-emitting element will be described.

[0377] A display device according to one aspect of the present invention has a light-receiving unit with a light-receiving element and a light-emitting element. In this aspect of the display device, the light-emitting element is arranged in a matrix in the light-receiving unit, and the light-receiving unit can display an image. Furthermore, the light-receiving unit also has a light-receiving element arranged in a matrix, and the light-receiving unit has either an imaging function or a sensing function, or both. The light-receiving unit can be used as an image sensor, a touch sensor, etc. That is, by detecting light in the light-receiving unit, it is possible to capture an image or detect touch operations of an object (finger, pen, etc.). Moreover, in this aspect of the display device, the light-emitting element can be used as a light source for a sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced.

[0378] In one embodiment of the present invention, when an object reflects (or scatters) the light emitted by the light-emitting element of the light-receiving and light-receiving unit that has passed through the colored layer, the light-receiving element can detect the reflected light (or scattered light), making it possible to perform tasks such as image capture and touch operation detection even in dark places.

[0379] A light-emitting element in a display device according to one aspect of the present invention functions as a display element (also called a display device).

[0380] As the light-emitting element, it is preferable to use light-emitting elements (also called light-emitting devices) such as OLEDs and QLEDs (Quantum-dot Light Emitting Diodes). Examples of light-emitting materials for EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (TADF) materials. In addition, LEDs such as microLEDs can also be used as light-emitting elements.

[0381] A display device according to one aspect of the present invention has the function of detecting light using a light-receiving element.

[0382] When a light-receiving element is used as an image sensor, a display device can capture an image using the light-receiving element. For example, the display device can be used as a scanner.

[0383] An electronic device to which a display device according to one aspect of the present invention is applied can acquire data related to biometric information such as fingerprints and palm prints using its function as an image sensor. In other words, a biometric authentication sensor can be built into the display device. By having the biometric authentication sensor built into the display device, the number of components in the electronic device can be reduced compared to when a separate biometric authentication sensor is provided for the display device, making it possible to miniaturize and lighten the electronic device.

[0384] Furthermore, when a light-receiving element is used as a touch sensor, the display device can use the light-receiving element to detect touch operations on the object.

[0385] For example, a pn-type or pin-type photodiode can be used as the light-receiving element. The light-receiving element functions as a photoelectric conversion element (also called a photoelectric conversion device) that detects light incident on it and generates an electric charge. The amount of charge generated from the light-receiving element is determined by the amount of light incident on it.

[0386] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to a variety of devices.

[0387] In one aspect of the present invention, an organic EL element (also called an organic EL device) is used as a light-emitting element, and an organic photodiode is used as a light-receiving element. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL element.

[0388] Organic photodiodes have many layers that can share a common structure with organic EL elements. By depositing these common layers in a single process, the number of deposition steps can be reduced. For example, one of a pair of electrodes (the common electrode) can be a layer common to both the photodetector and the light-emitting element. Alternatively, at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer may be a layer common to both the photodetector and the light-emitting element.

[0389] In the following section, a display device, which is an example of a display device according to one aspect of the present invention, will be described in more detail with reference to the drawings.

[0390] [Example of a display device configuration] Figure 26A shows a schematic diagram of the display panel 200. The display panel 200 includes a substrate 201, a substrate 202, a light-receiving element 212, a light-emitting element 211R, a light-emitting element 211G, a light-emitting element 211B, a functional layer 203, and the like.

[0391] The light-emitting elements 211R, 211G, 211B, and 212 are located between substrates 201 and 202. The light emitted from light-emitting elements 211R, 211G, and 211B passes through different colored layers to produce red (R), green (G), or blue (B) light, respectively. In the following, when light-emitting elements 211R, 211G, and 211B are not distinguished, they may be referred to simply as light-emitting element 211.

[0392] The display panel 200 has a plurality of pixels arranged in a matrix. Each pixel has one or more subpixels. Each subpixel has one light-emitting element. For example, a pixel can have a configuration with three subpixels (three colors: R, G, B, or three colors: yellow (Y), cyan (C), and magenta (M)), or a configuration with four subpixels (four colors: R, G, B, and white (W), or four colors: R, G, B, and Y). Furthermore, each pixel has a light-receiving element 212. The light-receiving element 212 may be provided in all pixels or in some pixels. Also, a single pixel may have multiple light-receiving elements 212.

[0393] Figure 26A shows how a finger 220 touches the surface of the substrate 202. A portion of the light emitted by the light-emitting element 211G passes through the colored layer and is reflected at the contact point between the substrate 202 and the finger 220. A portion of the reflected light is then incident on the light-receiving element 212, allowing detection that the finger 220 has touched the substrate 202. In other words, the display panel 200 can function as a touch panel.

[0394] The functional layer 203 includes circuits for driving the light-emitting elements 211R, 211G, and 211B, and a circuit for driving the light-receiving element 212. The functional layer 203 is provided with switches, transistors, capacitors, wiring, etc. However, when the light-emitting elements 211R, 211G, 211B, and the light-receiving element 212 are driven in a passive matrix manner, the configuration may be made without switches, transistors, etc.

[0395] The display panel 200 preferably has a function to detect the fingerprint of the finger 220. Figure 26B schematically shows an enlarged view of the contact area when the finger 220 is in contact with the substrate 202. Figure 26B also shows alternately arranged light-emitting elements 211 and light-receiving elements 212.

[0396] Fingerprints are formed on finger 220 by recesses and protrusions. Therefore, as shown in Figure 26B, the protrusions of the fingerprints are in contact with the substrate 202.

[0397] Light reflected from a surface or interface can be either specular or diffuse. Specularly reflected light is highly directional, with the angle of incidence and the angle of reflection being the same, while diffusely reflected light is less directional, with low angle dependence of intensity. The light reflected from the surface of finger 220 is predominantly diffuse. On the other hand, the light reflected from the interface between substrate 202 and the atmosphere is predominantly specular.

[0398] The intensity of light reflected from the contact or non-contact surface between the finger 220 and the substrate 202, and incident on the photodetector 212 located directly beneath them, is the sum of specularly reflected light and diffusely reflected light. As described above, in the recessed areas of the finger 220, the substrate 202 and the finger 220 do not come into contact, so specularly reflected light (indicated by the solid arrow) is dominant, while in the convex areas, they come into contact, so diffusely reflected light from the finger 220 (indicated by the dashed arrow) is dominant. Therefore, the intensity of light received by the photodetector 212 located directly beneath the recessed areas is higher than that received by the photodetector 212 located directly beneath the convex areas. This allows for imaging of the fingerprint of the finger 220.

[0399] The spacing between the light-receiving elements 212 is set to be smaller than the distance between two protrusions of a fingerprint, preferably the distance between adjacent recesses and protrusions, thereby enabling the acquisition of a clear fingerprint image. Since the distance between recesses and protrusions in a human fingerprint is approximately 200 μm, for example, the spacing between the light-receiving elements 212 is 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less, and 1 μm or more, preferably 10 μm or more, and more preferably 20 μm or more.

[0400] Figure 26C shows an example of a fingerprint image captured by the display panel 200. In Figure 26C, the outline of the finger 220 is shown with a dashed line and the outline of the contact area 221 is shown with a dashed line within the imaging range 223. Within the contact area 221, a high-contrast fingerprint 222 can be captured due to the difference in the amount of light incident on the light-receiving element 212.

[0401] The display panel 200 can also function as a touch panel and a pen tablet. Figure 26D shows the tip of the stylus 225 in contact with the substrate 202 and being slid in the direction of the dashed arrow.

[0402] As shown in Figure 26D, diffusely reflected light diffused at the contact surface between the tip of the stylus 225 and the substrate 202 is incident on the light-receiving element 212 located in the portion overlapping with the contact surface, thereby enabling high-precision detection of the position of the tip of the stylus 225.

[0403] Figure 26E shows an example of the trajectory 226 of the stylus 225 detected by the display panel 200. Because the display panel 200 can detect the position of the object being detected, such as the stylus 225, with high positional accuracy, it is possible to perform high-resolution drawing in drawing applications, etc. Furthermore, unlike when using capacitive touch sensors or electromagnetic induction type touch pens, it is possible to detect the position of the object being detected even if it has high insulating properties, so the material of the tip of the stylus 225 is not a concern, and various writing instruments (e.g., brushes, glass pens, quill pens, etc.) can be used.

[0404] Here, Figures 26F to 26H show an example of a pixel applicable to the display panel 200.

[0405] The pixels shown in Figures 26F and 26G each have a light-emitting element 211R corresponding to a red (R) subpixel, a light-emitting element 211G corresponding to a green (G) subpixel, a light-emitting element 211B corresponding to a blue (B) subpixel, and a light-receiving element 212. Each pixel has a pixel circuit for driving the light-emitting elements 211R, 211G, 211B, and the light-receiving element 212.

[0406] Figure 26F shows an example where three light-emitting elements and one photodetector are arranged in a 2x2 matrix. Figure 26G shows an example where three light-emitting elements are arranged in a row, with a horizontally elongated photodetector 212 positioned below them.

[0407] The pixel shown in Figure 26H is an example having a white (W) light-emitting element 211W. Here, four light-emitting elements are arranged in a row, with a light-receiving element 212 positioned below them.

[0408] Furthermore, the pixel configuration is not limited to the above, and various arrangement methods can be adopted.

[0409] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0410] (Embodiment 5) In this embodiment, examples of the configuration of a light-emitting element and an example of the configuration of a light-receiving element that can be applied to a display device according to one aspect of the present invention will be described with reference to Figures 27 to 29.

[0411] The display device 500 shown in Figures 27A and 27B has multiple light-emitting elements 550W that emit white light. A colored layer 545R that transmits red light, a colored layer 545G that transmits green light, or a colored layer 545B that transmits blue light is provided on top of each light-emitting element 550W. Here, the colored layers 545R, 545G, and 545B can be provided so as to overlap the light-emitting elements 550W via a protective layer 540.

[0412] The light-emitting element 550W shown in Figure 27A has a light-emitting unit 512W between a pair of electrodes (electrode 501, electrode 502). Electrode 501 functions as a pixel electrode and is provided for each light-emitting element. Electrode 502 functions as a common electrode and is provided in common for multiple light-emitting elements.

[0413] In other words, the light-emitting element 550W shown in Figure 27A is a light-emitting element having one light-emitting unit. In this specification, a configuration having one light-emitting unit between a pair of electrodes, as shown in Figure 27A, is referred to as a single structure.

[0414] The electrode 502 that extracts light preferably uses a conductive film that transmits visible light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode 501 that does not extract light.

[0415] In this embodiment, it is preferable that the light-emitting element of the display device has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes of the light-emitting element has an electrode that is transparent to and reflective to visible light (a semi-transmitting / semi-reflective electrode), and the other has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting element, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting element.

[0416] Furthermore, semi-transmissive / semi-reflective electrodes can have a laminated structure consisting of a reflective electrode and an electrode that transmits visible light (also called a transparent electrode).

[0417] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode with a visible light transmittance (light with a wavelength of 400 nm or more and less than 750 nm) of 40% or more in the light-emitting element. The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 It is preferable that the value be Ωcm or less. Furthermore, if the light-emitting element emits near-infrared light (light with a wavelength of 750 nm to 1300 nm), it is preferable that the transmittance or reflectance of these electrodes in near-infrared light satisfies the above numerical range, similar to the transmittance or reflectance of visible light.

[0418] As shown in Figure 27A, the light-emitting unit 512W can be formed as island-like layers. In other words, the light-emitting unit 512W shown in Figure 27A corresponds to the organic layer 112R, organic layer 112G, or organic layer 112B shown in Figure 1B, etc. The light-emitting element 550W corresponds to the light-emitting element 110R, light-emitting element 110G, or light-emitting element 110B. Furthermore, electrode 501 corresponds to pixel electrode 111R, pixel electrode 111G, or pixel electrode 111B. Also, electrode 502 corresponds to common electrode 113.

[0419] The light-emitting unit 512W has layers 521, 522, light-emitting layer 523Q_1, light-emitting layer 523Q_2, light-emitting layer 523Q_3, layer 524, etc. The light-emitting element 550W has layers 525, etc. between the light-emitting unit 512W and the electrode 502.

[0420] Figure 27A shows an example where the light-emitting unit 512W does not have layer 525, and layer 525 is provided in common among the light-emitting elements. In this case, layer 525 can be called a common layer. By providing one or more common layers to multiple light-emitting elements in this way, the manufacturing process can be simplified, and thus manufacturing costs can be reduced. Note that layer 525 may be provided for each light-emitting element. In other words, layer 525 may be included in the light-emitting unit 512W.

[0421] Layer 521 may have, for example, a layer containing a material with high hole injection capabilities (hole injection layer). Layer 522 may have, for example, a layer containing a material with high hole transport capabilities (hole transport layer). Layer 524 may have, for example, a layer containing a material with high electron transport capabilities (electron transport layer). Layer 525 may have, for example, a layer containing a material with high electron injection capabilities (electron injection layer). Alternatively, layer 521 may have an electron injection layer, layer 522 may have an electron transport layer, layer 524 may have a hole transport layer, and layer 525 may have a hole injection layer.

[0422] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection capabilities. Examples of materials with high hole injection capabilities include aromatic amine compounds and composite materials containing hole transport materials and acceptor materials (electron-accepting materials).

[0423] In a light-emitting element, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. The hole transport layer is a layer containing a hole-transporting material. The hole-transporting material is 1 × 10⁻¹⁶ -6 cm 2 Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials include π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton), which are materials with high hole transport capabilities.

[0424] In a light-emitting device, the electron transport layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron injection layer. The electron transport layer is a layer containing an electron-transporting material. The electron-transporting material is 1 × 10⁻¹⁶ -6 cm 2 Materials having an electron mobility of 1 / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Examples of electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds, which are materials with high electron transport capabilities.

[0425] Furthermore, the electron transport layer may have a multilayer structure, and may also have a hole blocking layer in contact with the light-emitting layer to block holes moving from the anode side through the light-emitting layer to the cathode side.

[0426] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection capabilities. Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection capabilities. Composite materials containing both electron transport materials and donor materials (electron-donating materials) can also be used as materials with high electron injection capabilities.

[0427] Examples of electron injection layers include lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), and calcium fluoride (CaF). x (where X is any number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatrium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatrium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatrium (abbreviation: LiPPP), lithium oxide (LiO x Alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Furthermore, the electron injection layer may be a multilayer structure of two or more layers. For example, this multilayer structure may consist of lithium fluoride as the first layer and ytterbium as the second layer.

[0428] Alternatively, an electron-transporting material may be used as the electron injection layer. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used.

[0429] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) of an organic compound containing a lone pair of electrons is between -3.6 eV and -2.3 eV. In addition, the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound can generally be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0430] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0431] In Figure 27A, layers 521 and 522 are shown separately, but the diagram is not limited to this. For example, if layer 521 has the functions of both a hole injection layer and a hole transport layer, or if layer 521 has the functions of both an electron injection layer and an electron transport layer, then layer 522 may be omitted.

[0432] The light-emitting layers 523Q_1, 523Q_2, and 523Q_3 are layers containing light-emitting materials. Each light-emitting layer may contain one or more types of light-emitting materials. Suitable light-emitting materials include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Furthermore, materials emitting near-infrared light may also be used as light-emitting materials.

[0433] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0434] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0435] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0436] The light-emitting layer may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more of these organic compounds may be hole-transporting materials and / or electron-transporting materials. Alternatively, one or more of these organic compounds may be bipolar materials or TADF materials.

[0437] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting device.

[0438] For a combination of materials that form an excited complex, it is preferable that the HOMO level (highest occupied orbital level) of the hole-transporting material is greater than or equal to the HOMO level of the electron-transporting material. It is also preferable that the LUMO level (lowest unoccupied orbital level) of the hole-transporting material is greater than or equal to the LUMO level of the electron-transporting material. The LUMO and HOMO levels of the materials can be derived from the electrochemical properties (reduction potential and oxidation potential) of the materials measured by cyclic voltammetry (CV).

[0439] The formation of excited complexes can be confirmed, for example, by comparing the emission spectra of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing that the emission spectrum of the mixed film shifts to a longer wavelength than the emission spectra of each individual material (or has a new peak on the longer wavelength side). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing differences in the transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component or a larger proportion of the delayed component than the transient PL lifetime of each individual material. Furthermore, the transient PL mentioned above can be read as transient electroluminescence (EL). That is, the formation of excited complexes can also be confirmed by comparing the transient EL of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing the differences in the transient response.

[0440] In the light-emitting element 550W shown in Figure 27A, white light emission can be obtained from the light-emitting element 550W by selecting light-emitting layers such that the sum of the light emitted from light-emitting layers 523Q_1, 523Q_2, and 523Q_3 results in white light. Here, an example is shown in which the light-emitting unit 512W has three light-emitting layers, but the number of light-emitting layers is not limited; for example, it may have two layers.

[0441] By providing a colored layer 545R, a colored layer 545G, or a colored layer 545B on such a light-emitting element 550W capable of emitting white light, each pixel can emit red light, green light, or blue light, enabling full-color display. While Figure 27A and other figures show an example where a colored layer 545R transmits red light, a colored layer 545G transmits green light, and a colored layer 545B transmits blue light, the present invention is not limited to this. The visible light transmitted by the colored layers should consist of at least two or more different colors of visible light, such as red, green, blue, cyan, magenta, or yellow, which can be appropriately selected.

[0442] Therefore, even if layers 521, 522, 524, 525, light-emitting layer 523Q_1, light-emitting layer 523Q_2, and light-emitting layer 523Q_3 have the same configuration (material, film thickness, etc.) for each color pixel, full-color display can be achieved by appropriately providing colored layers. Thus, a display device according to one aspect of the present invention does not require the creation of different light-emitting elements for each pixel, thus simplifying the manufacturing process and reducing manufacturing costs. However, the present invention is not limited thereto, and one or more of layers 521, 522, 524, 525, light-emitting layer 523Q_1, light-emitting layer 523Q_2, and light-emitting layer 523Q_3 can have different configurations depending on the pixel.

[0443] The light-emitting element 550W shown in Figure 27B has a configuration in which two light-emitting units (light-emitting unit 512Q_1, light-emitting unit 512Q_2) are stacked between a pair of electrodes (electrode 501, electrode 502) with an intermediate layer 531 in between.

[0444] Furthermore, the intermediate layer 531 has the function of injecting electrons into one of the light-emitting units 512Q_1 and 512Q_2 and holes into the other when a voltage is applied between the electrodes 501 and 502. The intermediate layer 531 can also be called a charge generation layer.

[0445] As the intermediate layer 531, for example, a material applicable to the electron injection layer, such as lithium fluoride, can be suitably used. Alternatively, as the intermediate layer, a material applicable to the hole injection layer can be suitably used. Furthermore, the intermediate layer can be a layer containing a material with high hole transport properties (hole transport material) and an acceptor material (electron-accepting material). Alternatively, the intermediate layer can be a layer containing a material with high electron transport properties (electron-transport material) and a donor material. By forming an intermediate layer having such a layer, it is possible to suppress the increase in driving voltage when light-emitting units are stacked.

[0446] The light-emitting unit 512Q_1 has layers 521, 522, light-emitting layer 523Q_1, layer 524, etc. The light-emitting unit 512Q_2 has layers 522, light-emitting layer 523Q_2, layer 524, etc. The light-emitting element 550W has layers 525, etc. between the light-emitting unit 512Q_2 and the electrode 502. Note that layer 525 can also be considered as part of the light-emitting unit 512Q_2.

[0447] In the light-emitting element 550W shown in Figure 27B, white light emission can be obtained from the light-emitting element 550W by selecting light-emitting layers 523Q_1 and 523Q_2 such that their light emission is in a complementary color relationship. Preferably, light-emitting layers 523Q_1 and 523Q_2 contain light-emitting materials that emit light such as R (red), G (green), B (blue), Y (yellow), and O (orange), respectively. Alternatively, it is preferable that the light emission of the light-emitting materials in light-emitting layers 523Q_1 and 523Q_2 contains spectral components of two or more colors from R, G, and B.

[0448] Here, we will explain an example of the combination of light-emitting colors of the light-emitting layers of each light-emitting unit that can be used in the 550W light-emitting element.

[0449] For example, if the light-emitting element 550W has two light-emitting units, a light-emitting element 550W that emits white light can be obtained by obtaining red and green light from one light-emitting unit and blue light from the other light-emitting unit. Alternatively, a light-emitting element 550W that emits white light can be obtained by obtaining yellow or orange light from one light-emitting unit and blue light from the other light-emitting unit.

[0450] Furthermore, for example, if the light-emitting element 550W has three light-emitting units, a light-emitting element 550W that emits white light can be obtained by obtaining red light from one of the light-emitting units, green light from another light-emitting unit, and blue light from the remaining light-emitting unit. Alternatively, a blue light-emitting layer can be used for the first light-emitting unit, a yellow, yellow-green, or green light-emitting layer for the second light-emitting unit, and a blue light-emitting layer for the third light-emitting unit. Alternatively, a blue light-emitting layer can be used for the first light-emitting unit, a laminated structure can be used for the second light-emitting unit consisting of a red light-emitting layer and yellow, yellow-green, or green light-emitting layers, and a blue light-emitting layer for the third light-emitting unit.

[0451] Furthermore, for example, if the light-emitting element 550W has four light-emitting units, a blue light-emitting layer can be used in the first light-emitting unit, a red light-emitting layer in one of the second and third light-emitting units, a yellow, yellow-green, or green light-emitting layer in the other, and a blue light-emitting layer in the fourth light-emitting unit.

[0452] In this specification, a configuration in which multiple light-emitting units are connected in series via an intermediate layer 531, such as the light-emitting element 550W shown in Figure 27B, is referred to as a tandem structure. While this specification uses the term "tandem structure," it is not limited to this; for example, a tandem structure may also be called a stacked structure. Furthermore, a tandem structure enables the creation of light-emitting elements capable of high-brightness illumination. Additionally, compared to a single-element structure, a tandem structure reduces the current required to achieve the same brightness, thereby reducing the power consumption of the display device and improving its reliability.

[0453] Here, we show an example where light-emitting units 512Q_1 and 512Q_2 each have one light-emitting layer, but the number of light-emitting layers in each light-emitting unit is not limited. For example, light-emitting units 512Q_1 and 512Q_2 may have different numbers of light-emitting layers. For example, one light-emitting unit may have two light-emitting layers, and the other light-emitting unit may have one light-emitting layer.

[0454] The display device 500 shown in Figure 28A is an example where the light-emitting element 550W has a configuration in which three light-emitting units are stacked. In Figure 28A, the light-emitting element 550W has a light-emitting unit 512Q_3 stacked on top of a light-emitting unit 512Q_2 via an intermediate layer 531. The light-emitting unit 512Q_3 has layers 522, light-emitting layer 523Q_3, layer 524, etc. The same configuration as the light-emitting unit 512Q_2 can be applied to the light-emitting unit 512Q_3.

[0455] When a tandem structure is applied to the light-emitting element, the number of light-emitting units is not particularly limited and can be two or more.

[0456] Figure 28B shows an example where n light-emitting units 512Q_1 are stacked to form 512Q_n (where n is an integer greater than or equal to 2).

[0457] In this way, by increasing the number of stacked light-emitting units, the brightness obtained from the light-emitting element with the same amount of current can be increased in proportion to the number of stacks. Furthermore, by increasing the number of stacked light-emitting units, the current required to obtain the same brightness can be reduced, thus reducing the power consumption of the light-emitting element in proportion to the number of stacks.

[0458] In addition, the light-emitting material of the light-emitting layer in the display device 500 is not particularly limited. For example, in the display device 500 shown in Figure 27B, the light-emitting layer 523Q_1 of the light-emitting unit 512Q_1 may have a phosphorescent material, and the light-emitting layer 523Q_2 of the light-emitting unit 512Q_2 may have a fluorescent material. Alternatively, the light-emitting layer 523Q_1 of the light-emitting unit 512Q_1 may have a fluorescent material, and the light-emitting layer 523Q_2 of the light-emitting unit 512Q_2 may have a phosphorescent material.

[0459] The configuration of the light-emitting unit is not limited to the above. For example, in the display device 500 shown in Figure 27B, the light-emitting layer 523Q_1 of the light-emitting unit 512Q_1 may have a TADF material, and the light-emitting layer 523Q_2 of the light-emitting unit 512Q_2 may have either a fluorescent material or a phosphorescent material. By using different light-emitting materials in this way, for example, by combining a highly reliable light-emitting material with a light-emitting material with high luminous efficiency, it is possible to compensate for the shortcomings of each and create a display device that improves both reliability and luminous efficiency.

[0460] Furthermore, in one embodiment of the present invention, the display device may be configured such that all light-emitting layers are made of fluorescent material, or so may be configured such that all light-emitting layers are made of phosphorescent material.

[0461] Figures 29A to 29E show examples of the configuration of a light-receiving element 550S that can be applied to a display device. Components shown in Figures 29A to 29E that are the same as those shown in Figure 27 or Figure 28 are denoted by the same reference numerals.

[0462] The photodetector 550S shown in Figure 29A has a photodetector unit 555 between a pair of electrodes (electrode 501, electrode 502). Electrode 501 functions as a pixel electrode and is provided for each photodetector. Electrode 502 functions as a common electrode and is provided in common to multiple light-emitting elements and photodetectors.

[0463] The light-receiving unit 555 shown in FIG. 29A can be formed as island-shaped layers respectively. That is, the light-receiving unit 555 shown in FIG. 29A corresponds to the organic layer 155 shown in FIG. 1B etc. Note that the light-receiving element 550S corresponds to the light-receiving element 110S. Also, the electrode 501 corresponds to the pixel electrode 111S. Also, the electrode 502 corresponds to the common electrode 113.

[0464] The light-receiving unit 555 has a layer 521, a layer 522, an active layer 526, a layer 524, etc. The layer 521, the layer 522, and the layer 524 are the same as those used in the light-emitting unit 512W. Also, the light-receiving element 550S has a layer 525 etc. between the light-receiving unit 555 and the electrode 502. Also, a protective layer 540 is provided on the electrode 502. Here, the layer 525, the electrode 502, and the protective layer 540 are films commonly provided for the light-emitting element 550W and the light-receiving element 550S as shown in FIG. 27A etc.

[0465] The active layer 526 contains a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example of using an organic semiconductor as the semiconductor included in the active layer 526 is shown. By using an organic semiconductor, the light-emitting layer and the active layer 526 can be formed by the same method (for example, vacuum evaporation method), and it is preferable because the manufacturing apparatus can be shared.

[0466] As the active layer 526, for example, a pn-type or pin-type photodiode can be used. The following shows an n-type semiconductor material and a p-type semiconductor material that can be used as the active layer 526. The n-type semiconductor material and the p-type semiconductor material may be laminated in layers respectively or may be mixed into one layer for use.

[0467] Examples of the material of the n-type semiconductor included in the active layer 526 include fullerene (for example, C 60 、C 70Examples include electron-accepting organic semiconductor materials such as fullerene derivatives. Fullerenes have a shape like a soccer ball, and this shape is energetically stable. Both the HOMO and LUMO levels of fullerenes are deep (low). Because the LUMO level of fullerenes is deep, they have extremely high electron-accepting properties. Normally, when π-electron conjugation (resonance) spreads out in a plane, as in benzene, electron-donating properties increase, but because fullerenes have a spherical shape, they have high electron-accepting properties despite the large spread of π-electron conjugation. High electron-accepting properties allow for fast and efficient charge separation, making them useful as photodetectors. 60 , C 70 Both have a broad absorption band in the visible light region, and especially C 70 is C 60 Compared to [another compound], it is preferable because it has a larger π-electron conjugation system and a broad absorption band in the long-wavelength region. Other examples of fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviated as PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviated as PC60BM), and 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviated as ICBA).

[0468] Furthermore, examples of n-type semiconductor materials include perylenetetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviated as Me-PTCDI).

[0469] Furthermore, an example of an n-type semiconductor material is 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalonitrile (abbreviation: FT2TDMN).

[0470] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0471] Examples of p-type semiconductor materials for the active layer 526 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0472] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0473] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0474] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0475] For example, the active layer 526 is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer 526 may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0476] The light-emitting element and the light-receiving element may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting element and the light-receiving element can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0477] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transporting materials or electron blocking materials. In addition, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as electron transporting materials or hole blocking materials. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0478] Furthermore, the active layer 526 can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method of dispersing the acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0479] Furthermore, the active layer 526 may contain a mixture of three or more materials. For example, to broaden the wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0480] As shown in Figure 29A, the light-receiving unit 555 can be stacked in the following order: layer 521 (hole injection layer), layer 522 (hole transport layer), active layer 526, layer 524 (electron transport layer), and layer 525 (electron injection layer). This is the same stacking order as the light-emitting unit 512W shown in Figure 27A. In this case, in both the light-emitting element 550W and the light-receiving element 550S, electrode 501 can function as the anode and electrode 502 can function as the cathode. In other words, by driving the light-receiving element 550S with a reverse bias applied between electrode 501 and electrode 502, the light-receiving element 550S can detect light incident on it, generate charge, and extract it as current.

[0481] However, the present invention is not limited thereto. For example, the configuration may include layer 521 having an electron injection layer, layer 522 having an electron transport layer, layer 524 having a hole transport layer, and layer 525 having a hole injection layer. In this case, in the photodetector 550S, electrode 501 can function as a cathode and electrode 502 can function as an anode. As shown in the above embodiment, in the present invention, the light-emitting element 550W and the photodetector 550S can be formed individually. Therefore, even if the configurations of the light-emitting element 550W and the photodetector 550S are significantly different, they can be manufactured relatively easily.

[0482] Furthermore, it is not necessary to provide all of the layers 521, 522, 524, and 525 shown in Figure 29A. For example, as shown in Figure 29B, the layer 521 having the hole injection layer may be omitted, and the layer 522 having the hole injection layer may be in contact with the electrode 501. It is preferable to provide at least one of the layer 522 having the hole transport layer and the layer 524 having the electron transport layer in contact with the active layer 526, as shown in Figures 29A and 29B. This makes it possible to suppress the occurrence of leakage current between the electrode 501 and the electrode 502 in the photodetector 550S, which would reduce the imaging sensitivity.

[0483] Furthermore, it is also possible to omit either layer 522 or layer 524. For example, as shown in Figure 29C, the active layer 526 may be in contact with layer 525 without providing layer 524, which has an electron transport layer.

[0484] Furthermore, the light-receiving unit 555 can also consist only of the active layer 526. For example, as shown in Figure 29D, the active layer 526 may be in contact with the electrode 501 without providing the hole transport layer 522.

[0485] Furthermore, if layer 525 is not a common layer but is provided for each light-emitting element, it is also possible to have a configuration in which layer 525 is not provided for the photodetector element 550S. For example, as shown in Figure 29E, a configuration may be made in which the active layer 526 is in contact with the electrode 502 without providing layer 525 which has an electron injection layer.

[0486] This embodiment can be combined with other embodiments as appropriate.

[0487] (Embodiment 6) This embodiment describes an example of a display device having a light-receiving device, etc., according to one aspect of the present invention.

[0488] In the display device of this embodiment, each pixel can be configured to have multiple subpixels, each having a light-emitting device that emits a different color from the others. For example, a pixel can be configured to have three types of subpixels. Examples of these three subpixels include subpixels of three colors: red (R), green (G), and blue (B); and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). Alternatively, a pixel can be configured to have four types of subpixels. Examples of these four subpixels include subpixels of four colors: red, green, blue, and white (W); and subpixels of four colors: red, green, blue, and yellow.

[0489] There are no particular limitations on the arrangement of subpixels, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0490] Furthermore, the top surface shape of a sub-pixel can be, for example, a polygon such as a triangle, quadrilateral (including rectangles and squares), or pentagon, or a polygon with rounded corners, or an ellipse or a circle. The top surface shape of a sub-pixel referred to here corresponds to the top surface shape of the light-emitting area of ​​a light-emitting device.

[0491] In a display device having light-emitting and light-receiving devices in its pixels, the pixels have a light-receiving function, allowing for the detection of contact or proximity of an object while displaying an image. For example, not only can the display device display an image using all of its subpixels, but some subpixels can also emit light as a light source, while the remaining subpixels display an image.

[0492] The pixels shown in Figures 30A, 30B, and 30C have sub-pixels G, B, R, and PS.

[0493] The pixels shown in Figure 30A have a stripe array applied. The pixels shown in Figure 30B have a matrix array applied.

[0494] The pixel arrangement shown in Figure 30C has a configuration in which three subpixels (subpixel R, subpixel G, and subpixel S) are arranged vertically next to one subpixel (subpixel B).

[0495] Note that the layout of the subpixels is not limited to the configuration shown in Figures 30A to 30C.

[0496] Sub-pixel R has a light-emitting device that emits red light. Sub-pixel G has a light-emitting device that emits green light. Sub-pixel B has a light-emitting device that emits blue light. Sub-pixel IR has a light-emitting device that emits infrared light. Sub-pixel PS has a light-receiving device. The wavelength of light detected by sub-pixel PS is not particularly limited, but it is preferable that the light-receiving device of sub-pixel PS is sensitive to the light emitted by the light-emitting devices of sub-pixel R, sub-pixel G, sub-pixel B, or sub-pixel IR. For example, it is preferable to detect one or more of the wavelengths of light in the blue, violet, blue-violet, green, yellow-green, yellow, orange, and red ranges, and the infrared wavelength range.

[0497] The light-receiving area of ​​a sub-pixel PS is smaller than the light-emitting area of ​​other sub-pixels. A smaller light-receiving area results in a narrower imaging range, which helps suppress blurring in the image and improves resolution. Therefore, using sub-pixel PS enables high-definition or high-resolution imaging. For example, sub-pixel PS can be used to capture images for personal authentication, such as fingerprints, palm prints, irises, pulse patterns (including vein and artery patterns), or faces.

[0498] Furthermore, the sub-pixel PS can be used in touch sensors (also called direct touch sensors) or near-touch sensors (also called hover sensors, hover-touch sensors, non-contact sensors, or touchless sensors). For example, it is preferable for the sub-pixel PS to detect infrared light. This enables touch detection even in dark places.

[0499] Here, a touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when it comes into direct contact with the display device. A near-touch sensor can detect an object even if it does not come into contact with the display device. For example, it is preferable that the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the display device without the object directly touching it; in other words, it becomes possible to operate the display device without contact (touchless). With the above configuration, the risk of the display device becoming dirty or scratched can be reduced, or it becomes possible to operate the display device without the object directly touching any dirt (e.g., dust or viruses) attached to the display device.

[0500] Furthermore, in order to perform high-resolution imaging, it is preferable that sub-pixels PS be provided on all pixels of the display device. On the other hand, when sub-pixels PS are used in touch sensors or near-touch sensors, the accuracy required is not as high as when capturing fingerprints, so it is sufficient to provide them on only some of the pixels of the display device. The detection speed can be increased by reducing the number of sub-pixels PS in the display device to fewer than the number of sub-pixels R, etc.

[0501] Figure 30D shows an example of a pixel circuit for a sub-pixel having a light-receiving device, and Figure 30E shows an example of a pixel circuit for a sub-pixel having a light-emitting device.

[0502] The pixel circuit PIX1 shown in Figure 30D includes a light-receiving device PD, transistors M11, M12, M13, M14, and a capacitive element C2. Here, an example is shown in which a photodiode is used as the light-receiving device PD.

[0503] The light-receiving device PD has its anode electrically connected to wiring V1 and its cathode electrically connected to either the source or drain of transistor M11. Transistor M11 has its gate electrically connected to wiring TX and its other source or drain electrically connected to one electrode of capacitive element C2, one source or drain of transistor M12, and the gate of transistor M13. Transistor M12 has its gate electrically connected to wiring RES and its other source or drain electrically connected to wiring V2. Transistor M13 has its source or drain electrically connected to wiring V3 and its other source or drain electrically connected to either the source or drain of transistor M14. Transistor M14 has its gate electrically connected to wiring SE and its other source or drain electrically connected to wiring OUT1.

[0504] Constant potentials are supplied to wirings V1, V2, and V3, respectively. When the photodetector PD is driven with reverse bias, a potential higher than that of wiring V1 is supplied to wiring V2. Transistor M12 is controlled by a signal supplied to wiring RES and has the function of resetting the potential of the node connected to the gate of transistor M13 to the potential supplied to wiring V2. Transistor M11 is controlled by a signal supplied to wiring TX and has the function of controlling the timing at which the potential of the above node changes according to the current flowing through the photodetector PD. Transistor M13 functions as an amplifying transistor that provides an output according to the potential of the above node. Transistor M14 is controlled by a signal supplied to wiring SE and functions as a selection transistor for reading the output according to the potential of the above node with an external circuit connected to wiring OUT1.

[0505] The pixel circuit PIX2 shown in Figure 30E includes a light-emitting device EL, transistors M15, M16, M17, and a capacitive element C3. Here, an example using a light-emitting diode as the light-emitting device EL is shown. In particular, it is preferable to use an organic EL element as the light-emitting device EL.

[0506] Transistor M15 has its gate electrically connected to wiring VG, one of its source or drain electrically connected to wiring VS, and the other of its source or drain electrically connected to one electrode of capacitive element C3 and the gate of transistor M16. One of the source or drain of transistor M16 is electrically connected to wiring V4, and the other is electrically connected to the anode of light-emitting device EL and one of the source or drain of transistor M17. Transistor M17 has its gate electrically connected to wiring MS, and the other of its source or drain electrically connected to wiring OUT2. The cathode of light-emitting device EL is electrically connected to wiring V5.

[0507] Constant potentials are supplied to wirings V4 and V5, respectively. This allows the anode side of the light-emitting device EL to be at a high potential and the cathode side to be at a lower potential than the anode side. Transistor M15 is controlled by a signal supplied to wiring VG and functions as a selection transistor to control the selected state of the pixel circuit PIX2. Transistor M16 functions as a drive transistor that controls the current flowing to the light-emitting device EL according to the potential supplied to its gate. When transistor M15 is conducting, the potential supplied to wiring VS is supplied to the gate of transistor M16, and the luminescence brightness of the light-emitting device EL can be controlled according to that potential. Transistor M17 is controlled by a signal supplied to wiring MS and has the function of outputting the potential between transistor M16 and the light-emitting device EL to the outside via wiring OUT2.

[0508] Here, it is preferable to apply transistors to which the semiconductor layer in which the channel is formed is made of a metal oxide (oxide semiconductor) for transistors M11, M12, M13, and M14 in the pixel circuit PIX1, and transistors M15, M16, and M17 in the pixel circuit PIX2.

[0509] Transistors using metal oxides, which have a wider bandgap and lower carrier density than silicon, can achieve extremely low off-currents. Therefore, this low off-current allows the charge accumulated in the capacitive element connected in series with the transistor to be retained for extended periods. For this reason, it is preferable to use transistors made of oxide semiconductors, particularly for transistors M11, M12, and M15 connected in series with capacitive element C2 or C3. Similarly, using oxide semiconductor transistors for other transistors can reduce manufacturing costs.

[0510] For example, the off-current value of an OS transistor per 1 μm channel width at room temperature is 1 aA (1 × 10⁻¹⁰). -18 A) Below, 1zA(1×10 -21 A) Less than or equal to 1yA(1×10 -24 A) It can be less than or equal to the following. Note that the off-current value of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1 × 10⁻¹⁰). -15 A) More than 1pA (1×10 -12 A) The answer is as follows. Therefore, it can be said that the off-current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0511] Furthermore, transistors M11 to M17 can also be transistors in which silicon is applied as the semiconductor in which the channel is formed. In particular, using highly crystalline silicon such as single-crystal silicon or polycrystalline silicon is preferable because it can achieve high field-effect mobility, enabling faster operation.

[0512] Alternatively, a configuration may be used in which one or more transistors among transistors M11 to M17 have oxide semiconductors applied, and the others have silicon applied.

[0513] Note that in Figures 30D and 30E, transistors are shown as n-channel transistors, but p-channel transistors can also be used.

[0514] It is preferable that the transistors in pixel circuit PIX1 and pixel circuit PIX2 be formed side by side on the same substrate. In particular, it is preferable to configure the transistors in pixel circuit PIX1 and pixel circuit PIX2 to be mixed within a single region and arranged periodically.

[0515] Furthermore, it is preferable to provide one or more layers having either or both transistors and / or capacitive elements in a position that overlaps with the light-receiving device PD or light-emitting device EL. This reduces the effective area occupied by each pixel circuit, enabling the realization of a high-definition light-receiving or display unit.

[0516] To increase the luminescence brightness of the light-emitting device (EL) included in the pixel circuit, it is necessary to increase the amount of current flowing through the EL. To achieve this, the source-drain voltage of the drive transistor included in the pixel circuit must be increased. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, allowing a higher voltage to be applied to the source-drain of an OS transistor. As a result, by using an OS transistor as the drive transistor in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, thereby increasing the luminescence brightness of the light-emitting device.

[0517] Furthermore, when the transistor operates in the saturation region, OS transistors exhibit smaller changes in source-drain current in response to changes in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as driving transistors in the pixel circuit, the current flowing between the source and drain can be precisely controlled by changes in gate-source voltage, thereby controlling the amount of current flowing to the light-emitting device. This allows for a wider range of tonal gradations in the pixel circuit.

[0518] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using OS transistors as driving transistors, for example, a stable current can be supplied to a light-emitting device even if there are variations in the current-voltage characteristics of the light-emitting device containing EL material. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting device.

[0519] As described above, by using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "suppression of black level floating," "increase in luminescence brightness," "multi-gradation," and "suppression of variations in light-emitting devices."

[0520] Furthermore, a display device according to one aspect of the present invention can have a variable refresh rate. For example, power consumption can be reduced by adjusting the refresh rate according to the content displayed on the display device (for example, within a range of 0.01 Hz to 240 Hz). In addition, a drive that reduces the power consumption of the display device by driving with a reduced refresh rate may be called an idling stop (IDS) drive.

[0521] Furthermore, the drive frequency of the touch sensor or near-touch sensor may be changed according to the refresh rate mentioned above. For example, if the refresh rate of the display device is 120Hz, the drive frequency of the touch sensor or near-touch sensor can be set to a frequency higher than 120Hz (typically 240Hz). This configuration enables low power consumption and increases the response speed of the touch sensor or near-touch sensor.

[0522] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0523] (Embodiment 7) This embodiment describes a high-resolution display device.

[0524] [Example of display panel configuration] Wearable electronic devices for VR and AR can provide 3D images by using parallax. In this case, the image for the right eye must be displayed within the right eye's field of view, and the image for the left eye must be displayed within the left eye's field of view. Here, the display area of ​​the display device may be a horizontally elongated rectangle, but pixels located outside the fields of view of the right and left eyes do not contribute to the display, and therefore these pixels will always display black.

[0525] Therefore, it is preferable to divide the display panel into two areas, one for the right eye and one for the left eye, and to configure it so that pixels are not placed in the outer area that does not contribute to the display. This reduces the power consumption required for writing pixels. In addition, the load on source lines, gate lines, etc. is reduced, making it possible to display at a higher frame rate. As a result, smoother video can be displayed, which enhances the sense of realism.

[0526] Figure 31A shows an example of the display panel configuration. In Figure 31A, the left eye display unit 702L and the right eye display unit 702R are arranged inside the circuit board 701. In addition to the display units 702L and 702R, the circuit board 701 may also contain drive circuits, wiring, ICs, FPCs, etc.

[0527] The display units 702L and 702R shown in Figure 31A have a square top surface shape.

[0528] Furthermore, the top surface shapes of the display units 702L and 702R may be other regular polygons. Figure 31B shows an example of a regular hexagon, Figure 31C shows an example of a regular octagon, Figure 31D shows an example of a regular decagon, and Figure 31E shows an example of a regular dodecagon. In this way, by using a polygon with an even number of corners, the shape of the display unit can be made symmetrical. Note that polygons that are not regular polygons may also be used. In addition, regular polygons or polygons with rounded corners may be used.

[0529] Furthermore, because the display area is composed of pixels arranged in a matrix, the straight sections of the outline of each display area are not strictly straight lines, and there may be stepped sections. In particular, the straight sections that are not parallel to the direction of pixel arrangement will have a stepped top surface shape. However, since the user does not perceive the shape of the pixels when viewing the display, even if the diagonal outline of the display area is strictly stepped, it can be considered a straight line. Similarly, even if the curved sections of the outline of the display area are strictly stepped, they can be considered curves.

[0530] Figure 31F also shows an example where the top surface shape of the display unit 702L and the display unit 702R is a circle.

[0531] Furthermore, the top shapes of the display units 702L and 702R may be asymmetrical. Also, they do not have to be regular polygons.

[0532] Figure 31G shows an example where the top surfaces of the display units 702L and 702R are asymmetrical octagons. Figure 31H shows an example where they are regular heptagons. Even when the top surfaces of the display units 702L and 702R are asymmetrical, it is preferable to arrange the display units 702L and 702R symmetrically. This allows for the provision of images that do not appear unnatural.

[0533] The above describes a configuration where the display unit is divided into two parts, but it may also be a single, continuous shape.

[0534] Figure 31I shows an example of connecting the two circular display units 702 in Figure 31F. Figure 31J shows an example of connecting the two regular octagonal display units 702 in Figure 31C.

[0535] The above is an explanation of an example of a display panel configuration.

[0536] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0537] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0538] (Embodiment 8) This embodiment describes metal oxides (also called oxide semiconductors) that can be used in the OS transistor described in the above embodiment.

[0539] The metal oxide used in the OS transistor preferably contains at least indium or zinc, and more preferably indium and zinc. For example, the metal oxide preferably contains indium, M (where M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, and more preferably gallium.

[0540] Furthermore, metal oxides can be formed by methods such as sputtering, CVD (Chemical Vapor Deposition) methods including MOCVD, or ALD (Artificial Alkaline Dissolution).

[0541] In the following sections, we will describe oxides containing indium (In), gallium (Ga), and zinc (Zn) as examples of metal oxides. Note that oxides containing indium (In), gallium (Ga), and zinc (Zn) are sometimes called In-Ga-Zn oxides.

[0542] <Classification of crystal structures> Examples of crystalline structures for oxide semiconductors include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystal.

[0543] The crystal structure of a film or substrate can be evaluated using X-ray diffraction (XRD) spectroscopy. For example, it can be evaluated using the XRD spectrum obtained from a GIXD (Grazing-Incidence XRD) measurement. The GIXD method is also known as the thin-film method or the Seemann-Bohlin method. In the following text, the XRD spectrum obtained from a GIXD measurement may simply be referred to as the XRD spectrum.

[0544] For example, in a quartz glass substrate, the peak shape of the XRD spectrum is nearly symmetrical. On the other hand, in an In-Ga-Zn oxide film with a crystalline structure, the peak shape of the XRD spectrum is asymmetrical. The asymmetrical shape of the XRD spectrum peaks clearly indicates the presence of crystals in the film or substrate. In other words, if the peak shape of the XRD spectrum is not symmetrical, the film or substrate cannot be said to be in an amorphous state.

[0545] Furthermore, the crystalline structure of a film or substrate can be evaluated by the diffraction pattern (also called the nano-beam electron diffraction pattern) observed using nano-beam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. On the other hand, a spot-like pattern is observed in the diffraction pattern of an In-Ga-Zn oxide film deposited at room temperature, rather than a halo. Therefore, it is presumed that the In-Ga-Zn oxide deposited at room temperature is in an intermediate state, neither single-crystal nor polycrystalline, nor amorphous, and cannot be concluded to be in an amorphous state.

[0546] <<Oxide semiconductor structure>> It should be noted that oxide semiconductors may be classified differently from those described above when considering their structure. For example, oxide semiconductors can be divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the aforementioned CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors also include polycrystalline oxide semiconductors, pseudo-amorphous oxide semiconductors (a-like OS), and amorphous oxide semiconductors.

[0547] Here, we will explain the details of the CAAC-OS, nc-OS, and a-like OS mentioned above.

[0548] [CAAC-OS] CAAC-OS is an oxide semiconductor having multiple crystalline regions, the c-axis of which is oriented in a specific direction. This specific direction is the thickness direction of the CAAC-OS film, the normal direction to the surface on which the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. A crystalline region is a region with periodic atomic arrangement. If we consider the atomic arrangement as a lattice arrangement, then a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC-OS has regions where multiple crystalline regions are connected in the ab-plane direction, and these regions may exhibit distortion. Distortion refers to a point in the connected region where the orientation of the lattice arrangement changes between a region with a aligned lattice arrangement and another region with a aligned lattice arrangement. In short, CAAC-OS is an oxide semiconductor that is c-axis oriented and does not exhibit clear orientation in the ab-plane direction.

[0549] Each of the multiple crystalline regions described above is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of a single minute crystal, the maximum diameter of that crystalline region is less than 10 nm. When a crystalline region is composed of many minute crystals, the size of that crystalline region may be around several tens of nanometers.

[0550] Furthermore, in In-Ga-Zn oxides, CAAC-OS tends to have a layered crystalline structure (also called a layered structure) consisting of layers containing indium (In) and oxygen (hereinafter referred to as the In layer) and layers containing gallium (Ga), zinc (Zn), and oxygen (hereinafter referred to as the (Ga,Zn) layer). Note that indium and gallium are mutually substitutable. Therefore, the (Ga,Zn) layer may contain indium. Also, the In layer may contain gallium. Also, the In layer may contain zinc. This layered structure can be observed, for example, as a lattice image in high-resolution TEM (Transmission Electron Microscope) images.

[0551] When structural analysis of a CAAC-OS film is performed using an XRD instrument, for example, out-of-plane XRD measurements using θ / 2θ scanning show a peak indicating c-axis orientation at 2θ = 31° or nearby. Note that the position of the c-axis orientation peak (value of 2θ) may vary depending on the type and composition of the metal elements constituting the CAAC-OS.

[0552] Furthermore, for example, multiple bright spots are observed in the electron diffraction pattern of a CAAC-OS film. These spots are observed at point-symmetric positions with respect to the incident electron beam spot (also called the direct spot) that passed through the sample.

[0553] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is based on a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be non-regular hexagonal. Furthermore, the strain may have lattice arrangements such as pentagons or heptagons. Moreover, in CAAC-OS, clear grain boundaries cannot be observed even near the strain. In other words, it can be seen that the formation of grain boundaries is suppressed by the strain in the lattice arrangement. This is thought to be because CAAC-OS can tolerate strain due to factors such as the non-dense arrangement of oxygen atoms in the ab-plane direction and the change in interatomic bond distances due to the substitution of metal atoms.

[0554] A crystal structure in which clear grain boundaries are observed is called a polycrystal. Grain boundaries act as recombination centers, trapping carriers and potentially causing a decrease in transistor on-current and field-effect mobility. Therefore, CAAC-OS, in which clear grain boundaries are not observed, is one of the crystalline oxides with a suitable crystal structure for the semiconductor layer of a transistor. In addition, a structure containing Zn is preferred for the composition of CAAC-OS. For example, In-Zn oxide and In-Ga-Zn oxide are preferred because they suppress the generation of grain boundaries more than In oxide.

[0555] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less susceptible to the decrease in electron mobility caused by grain boundaries. Furthermore, since the crystallinity of oxide semiconductors can decrease due to the inclusion of impurities and the generation of defects, CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Consequently, oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are heat resistant and highly reliable. In addition, CAAC-OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using CAAC-OS in OS transistors allows for greater flexibility in the manufacturing process.

[0556] [nc-OS] nc-OS exhibits periodicity in atomic arrangement in minute regions (e.g., regions between 1 nm and 10 nm, particularly between 1 nm and 3 nm). In other words, nc-OS contains minute crystals. These minute crystals are also called nanocrystals because their size is, for example, between 1 nm and 10 nm, particularly between 1 nm and 3 nm. Furthermore, nc-OS shows no regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed throughout the film. Consequently, depending on the analytical method, nc-OS may be indistinguishable from a-like OS or amorphous oxide semiconductors. For example, when structural analysis of an nc-OS film is performed using an XRD instrument, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scanning. Also, when electron diffraction (also called limited-field electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter larger than that of the nanocrystals (e.g., 50 nm or larger), a diffraction pattern resembling a halo pattern is observed. On the other hand, when electron diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter close to or smaller than the size of the nanocrystal (for example, 1 nm to 30 nm), an electron diffraction pattern may be obtained in which multiple spots are observed within a ring-shaped region centered on a direct spot.

[0557] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. Also, a-like OS has a higher hydrogen concentration in the film compared to nc-OS and CAAC-OS.

[0558] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS refers to the material composition.

[0559] [CAC-OS] CAC-OS is a material composition in which, for example, the elements constituting the metal oxide are unevenly distributed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size. In the following, a state in which one or more metal elements are unevenly distributed in a metal oxide, and the regions containing these metal elements are mixed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size, is also referred to as a mosaic or patchy state.

[0560] Furthermore, CAC-OS is a composite metal oxide having a mosaic-like structure formed by the separation of the material into a first region and a second region, with the first region distributed within the film (hereinafter also referred to as a cloud-like structure). In other words, CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.

[0561] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS of In-Ga-Zn oxide, the first region is the region where [In] is greater than the [In] in the composition of the CAC-OS film. The second region is the region where [Ga] is greater than the [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is the region where [In] is greater than the [In] in the second region, and [Ga] is smaller than the [Ga] in the second region. The second region is the region where [Ga] is greater than the [Ga] in the first region, and [In] is smaller than the [In] in the first region.

[0562] Specifically, the first region described above is a region whose main components are indium oxide, indium zinc oxide, etc. The second region described above is a region whose main components are gallium oxide, gallium zinc oxide, etc. In other words, the first region can be rephrased as a region whose main component is In. Similarly, the second region can be rephrased as a region whose main component is Ga.

[0563] Furthermore, a clear boundary may not be observed between the first region and the second region described above.

[0564] Furthermore, CAC-OS in In-Ga-Zn oxide refers to a material composition containing In, Ga, Zn, and O, in which regions with Ga as the main component and regions with In as the main component are arranged in a mosaic-like manner, with these regions existing randomly. Therefore, it is presumed that CAC-OS has a structure in which metal elements are unevenly distributed.

[0565] CAC-OS can be formed by sputtering, for example, under conditions where the substrate is not intentionally heated. When forming CAC-OS by sputtering, one or more gases selected from inert gases (typically argon), oxygen gas, and nitrogen gas may be used as the deposition gas. Furthermore, a lower ratio of the oxygen gas flow rate to the total deposition gas flow rate during film formation is preferable. For example, the ratio of the oxygen gas flow rate to the total deposition gas flow rate during film formation should be 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0566] Furthermore, for example, in the case of CAC-OS in In-Ga-Zn oxide, EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) confirms that it has a structure in which regions mainly composed of In (first region) and regions mainly composed of Ga (second region) are unevenly distributed and mixed.

[0567] Here, the first region is a region with higher conductivity compared to the second region. In other words, the conductivity of the metal oxide is exhibited when carriers flow through the first region. Therefore, a high field-effect mobility (μ) can be achieved when the first region is distributed in a cloud-like manner within the metal oxide.

[0568] On the other hand, the second region is a region with higher insulating properties compared to the first region. In other words, the distribution of the second region within the metal oxide can suppress leakage current.

[0569] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the insulation due to the second region work complementaryly to give CAC-OS a switching function (on / off function). In other words, CAC-OS has conductive function in part of the material, insulating function in part of the material, and semiconductor function as a whole. By separating the conductive function and the insulating function, both functions can be maximized. Therefore, by using CAC-OS in a transistor, a high on-current (I on ), high field-effect mobility (μ), and good switching operation can be achieved.

[0570] Furthermore, transistors using CAC-OS offer high reliability. Therefore, CAC-OS is ideal for various semiconductor devices, including display devices.

[0571] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention may include two or more of the following: amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CAC-OS, nc-OS, and CAAC-OS.

[0572] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0573] By using the above-mentioned oxide semiconductor in transistors, it is possible to realize transistors with high field-effect mobility. Furthermore, it is possible to realize highly reliable transistors.

[0574] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. For example, the carrier concentration of an oxide semiconductor is 1 × 10⁻⁶. 17 cm -3 The following is preferably 1 × 10 15 cm -3 More preferably 1 × 10 13 cm -3 More preferably 1 × 10 11 cm -3 More preferably 1 × 10 10 cm -3 It is less than 1 × 10 -9 cm -3 This concludes the explanation. Furthermore, when lowering the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film should be reduced to lower the defect level density. In this specification, a low impurity concentration and low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic. Note that oxide semiconductors with low carrier concentrations are sometimes referred to as high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors.

[0575] Furthermore, oxide semiconductor films that are highly intrinsic or substantially highly intrinsic may have a low trap level density due to their low defect level density.

[0576] Furthermore, charges trapped in the trap levels of oxide semiconductors can take a long time to disappear, sometimes behaving like fixed charges. Therefore, transistors in which channel formation regions are formed in oxide semiconductors with a high trap level density may exhibit unstable electrical properties.

[0577] Therefore, reducing the impurity concentration in the oxide semiconductor is effective in stabilizing the electrical characteristics of a transistor. Furthermore, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in adjacent films. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon. Note that impurities in an oxide semiconductor refer to elements other than the main components that make up the oxide semiconductor. For example, elements with a concentration of less than 0.1 atomic percent can be considered impurities.

[0578] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0579] In oxide semiconductors, the presence of silicon or carbon, which are Group 14 elements, leads to the formation of defect levels in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (concentration obtained by secondary ion mass spectrometry (SIMS)) are compared by 2 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 17 atoms / cm 3 The following applies:

[0580] Furthermore, if an oxide semiconductor contains alkali metals or alkaline earth metals, it may form defect levels and generate carriers. Therefore, transistors using oxide semiconductors containing alkali metals or alkaline earth metals tend to exhibit normally-on characteristics. For this reason, the concentration of alkali metals or alkaline earth metals in the oxide semiconductor obtained by SIMS should be set to 1 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0581] Furthermore, in oxide semiconductors, the presence of nitrogen generates electrons, which act as carriers, increasing the carrier concentration and making it easier for the semiconductor to become n-type. As a result, transistors using oxide semiconductors containing nitrogen tend to exhibit normally-on characteristics. Alternatively, the presence of nitrogen in oxide semiconductors can lead to the formation of trap levels. As a result, the electrical properties of the transistor may become unstable. For this reason, the nitrogen concentration in oxide semiconductors obtained by SIMS should be set to 5 × 10⁻⁶. 19 atoms / cm 3 Less than 5 × 10 18 atoms / cm3 More preferably 1 × 10 18 atoms / cm 3 More preferably 5 × 10 17 atoms / cm 3 Do the following:

[0582] Furthermore, hydrogen contained in oxide semiconductors can react with oxygen bonded to metal atoms to form water, potentially creating oxygen vacancies. Hydrogen can then fill these vacancies, generating electrons as carriers. Additionally, some of the hydrogen can combine with oxygen bonded to metal atoms to generate electrons. Therefore, transistors using oxide semiconductors containing hydrogen tend to exhibit normally-on characteristics. For this reason, it is preferable to reduce the hydrogen content in oxide semiconductors as much as possible. Specifically, the hydrogen concentration in the oxide semiconductor obtained by SIMS should be 1 × 10⁻⁶. 20 atoms / cm 3 Less than 1 × 10 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3 Less than 1 × 10 18 atoms / cm 3 Make it less than.

[0583] By using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor, stable electrical characteristics can be provided.

[0584] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0585] (Embodiment 9) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 32 to 35.

[0586] The electronic device of this embodiment has a display device according to one aspect of the present invention. The display device according to one aspect of the present invention is easily made high-definition, high-resolution, and large-scale. Therefore, the display device according to one aspect of the present invention can be used in the display units of various electronic devices.

[0587] Furthermore, since the display device according to one aspect of the present invention can be manufactured at a low cost, the manufacturing cost of electronic devices can be reduced.

[0588] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0589] In particular, a display device according to one aspect of the present invention can be used suitably in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include information terminals (wearable devices) such as wristwatches and bracelets, as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays and AR devices such as glasses. Wearable devices also include devices for SR (Substitutional Reality) and devices for MR (Mixed Reality).

[0590] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K2K (3840 x 2160 pixels), or 8K4K (7680 x 4320 pixels). In particular, a resolution of 4K2K, 8K4K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using display devices with such high resolution or high detail, it becomes possible to enhance the sense of presence and depth in personal electronic devices such as portable or home-use devices.

[0591] The electronic device of this embodiment can be incorporated along the curved surfaces of the interior or exterior walls of a house or building, or the interior or exterior of an automobile.

[0592] The electronic device in this embodiment may have an antenna. By receiving signals with the antenna, the display unit can display images and information. Furthermore, if the electronic device has an antenna and a secondary battery, the antenna may be used for contactless power transmission.

[0593] The electronic device of this embodiment may have sensors (including those with the function of detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0594] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0595] The electronic device 6500 shown in Figure 32A is a portable information terminal that can be used as a smartphone.

[0596] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0597] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0598] Figure 32B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0599] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0600] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0601] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0602] A flexible display (a display device with flexibility) according to one embodiment of the present invention can be applied to the display panel 6511. As a result, an extremely lightweight electronic device can be realized. Furthermore, because the display panel 6511 is extremely thin, a large-capacity battery 6518 can be installed while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, an electronic device with a narrow bezel can be realized.

[0603] Figure 33A shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0604] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0605] The television device 7100 shown in Figure 33A can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0606] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0607] Figure 33B shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0608] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0609] Figures 33C and 33D show examples of digital signage.

[0610] The digital signage 7300 shown in Figure 33C comprises a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0611] Figure 33D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0612] In Figures 33C and 33D, a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0613] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0614] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0615] Furthermore, as shown in Figures 33C and 33D, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. In addition, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0616] Furthermore, the digital signage 7300 or digital signage 7400 can be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows a large number of users to participate in and enjoy the game simultaneously.

[0617] Figure 34A shows the external appearance of the camera 8000 with the viewfinder 8100 attached.

[0618] The camera 8000 includes a housing 8001, a display unit 8002, operation buttons 8003, a shutter button 8004, etc. A detachable lens 8006 is also attached to the camera 8000. The lens 8006 and the housing 8001 may be integrated into a single unit.

[0619] Camera 8000 can take an image by pressing the shutter button 8004 or by touching the display unit 8002, which functions as a touch panel.

[0620] The housing 8001 has a mount with electrodes, and in addition to the viewfinder 8100, a strobe device and the like can be connected to it.

[0621] The viewfinder 8100 includes a housing 8101, a display unit 8102, buttons 8103, etc.

[0622] The housing 8101 is attached to the camera 8000 by a mount that engages with the camera 8000's mount. The viewfinder 8100 can display images and other data received from the camera 8000 on the display unit 8102.

[0623] Button 8103 functions as a power button, etc.

[0624] A display device according to one embodiment of the present invention can be applied to the display unit 8002 of the camera 8000 and the display unit 8102 of the viewfinder 8100. The camera 8000 may also have a built-in viewfinder.

[0625] Figure 34B shows the external appearance of the head-mounted display 8200.

[0626] The head-mounted display 8200 includes a mounting section 8201, lenses 8202, a main unit 8203, a display unit 8204, a cable 8205, etc. The mounting section 8201 also has a built-in battery 8206.

[0627] Cable 8205 supplies power from battery 8206 to main unit 8203. Main unit 8203 is equipped with a wireless receiver and can display received video information on display unit 8204. In addition, main unit 8203 is equipped with a camera and can use information about the user's eyeball or eyelid movements as an input means.

[0628] Furthermore, the attachment unit 8201 may be provided with multiple electrodes at a position that touches the user, capable of detecting the current flowing in accordance with the user's eye movements, and may have a function to recognize the user's gaze. It may also have a function to monitor the user's pulse rate based on the current flowing through the electrodes. In addition, the attachment unit 8201 may have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may have a function to display the user's biometric information on the display unit 8204, or a function to change the image displayed on the display unit 8204 in accordance with the user's head movements.

[0629] A display device according to one aspect of the present invention can be applied to the display unit 8204.

[0630] Figures 34C to 34E show the external appearance of the head-mounted display 8300. The head-mounted display 8300 includes a housing 8301, a display unit 8302, a band-shaped fixing device 8304, and a pair of lenses 8305.

[0631] The user can view the display on the display unit 8302 through the lens 8305. It is preferable to position the display unit 8302 in a curved shape, as this allows the user to experience a greater sense of presence. Furthermore, by viewing different images displayed in different areas of the display unit 8302 through the lens 8305, three-dimensional display using parallax can be performed. Note that the configuration is not limited to a single display unit 8302; two display units 8302 may be provided, with one display unit for each of the user's eyes.

[0632] A display device according to one embodiment of the present invention can be applied to the display unit 8302. The display device according to one embodiment of the present invention can also achieve extremely high resolution. For example, even when the display is magnified and viewed using the lens 8305 as shown in Figure 34E, the pixels are difficult for the user to see. In other words, the display unit 8302 can be used to allow the user to view a highly realistic image.

[0633] Figure 34F shows the external appearance of a goggle-type head-mounted display 8400. The head-mounted display 8400 has a pair of housings 8401, a mounting part 8402, and a cushioning member 8403. A display unit 8404 and a lens 8405 are provided inside each of the pair of housings 8401. By displaying different images on the pair of display units 8404, a three-dimensional display using parallax can be achieved.

[0634] The user can view the display unit 8404 through the lens 8405. The lens 8405 has a focus adjustment mechanism and its position can be adjusted according to the user's eyesight. The display unit 8404 is preferably a square or a horizontally elongated rectangle. This can enhance the sense of realism.

[0635] The mounting portion 8402 is preferably adjustable to the size of the user's face and has plasticity and elasticity to prevent it from slipping off. Furthermore, it is preferable that a part of the mounting portion 8402 has a vibration mechanism that functions as a bone conduction earphone. This eliminates the need for separate audio equipment such as earphones or speakers, allowing users to enjoy video and audio simply by wearing the device. The housing 8401 may also have a function to output audio data via wireless communication.

[0636] The mounting portion 8402 and the cushioning member 8403 are parts that come into contact with the user's face (forehead, cheeks, etc.). By ensuring that the cushioning member 8403 is in close contact with the user's face, light leakage can be prevented, thereby enhancing the sense of immersion. It is preferable to use a soft material for the cushioning member 8403 so that it adheres closely to the user's face when the user wears the head-mounted display 8400. For example, materials such as rubber, silicone rubber, urethane, and sponge can be used. Furthermore, if the surface of a sponge or similar material is covered with cloth, leather (genuine leather or synthetic leather), gaps are less likely to form between the user's face and the cushioning member 8403, effectively preventing light leakage. In addition, using such materials is preferable because it feels good against the skin and does not make the user feel cold when worn in cold seasons. It is preferable that the components that come into contact with the user's skin, such as the cushioning member 8403 or the mounting portion 8402, are removable, as this makes cleaning or replacement easier.

[0637] The electronic equipment shown in Figures 35A to 35F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0638] The electronic devices shown in Figures 35A to 35F have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0639] A display device according to one embodiment of the present invention can be applied to the display unit 9001.

[0640] The details of the electronic equipment shown in Figures 35A to 35F will be explained below.

[0641] Figure 35A is a perspective view showing a personal digital assistant (PDA) 9101. The PDA 9101 can be used, for example, as a smartphone. The PDA 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. The PDA 9101 can also display text and image information on multiple surfaces. Figure 35A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, and phone calls, the subject of emails and SNS messages, the sender's name, date and time, battery level, and antenna signal strength. Alternatively, icons 9050 or the like may be displayed in the location where the information 9051 is displayed.

[0642] Figure 35B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0643] Figure 35C is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also be used for hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. Charging may be performed by wireless power supply.

[0644] Figures 35D to 35F are perspective views showing a foldable personal information terminal 9201. Figure 35D shows the personal information terminal 9201 in an unfolded state, Figure 35F shows it in a folded state, and Figure 35E shows a perspective view of the state in between, transitioning from one of Figures 35D or 35F to the other. The personal information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the personal information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0645] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0646] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part. [Explanation of Symbols]

[0647] 100C: Display device, 100D: Display device, 100E: Display device, 100F: Display device, 100G: Display device, 100: Display device, 101: Substrate, 102: Substrate, 103B: Sub-pixel, 103G: Sub-pixel, 103R: Sub-pixel, 103S: Sub-pixel, 103: Pixel, 105: Insulating layer, 110B: Light-emitting element, 110G: Light-emitting element, 110R: Light-emitting element, 110S: Photodetector, 110: Light-emitting element, 111B: Pixel electrode, 111C: Connecting electrode, 111G: Pixel electrode, 111R: Pixel electrode, 111S: Pixel electrode, 111: Pixel electrode, 112B: Organic layer, 112f: Organic film 112G: Organic layer, 112R: Organic layer, 112: Organic layer, 113: Common electrode, 114: Organic layer, 120: Slit, 121: Protective layer, 122: Resin layer, 125f: Insulating film, 125: Insulating layer, 126: Resin layer, 129B: Colored layer, 129G: Colored layer, 129R: Colored layer, 129: Colored layer, 130: Connection part, 131: Insulating layer, 132: Insulating layer, 143: Resist mask, 144: Sacrificial film, 145: Sacrificial layer, 146: Sacrificial film, 147: Sacrificial layer, 155f: Organic film, 155: Organic layer, 161: Conductive layer, 162: Conductive layer, 163: Resin layer, 173: Resist mask ,174: Sacrificial film, 175: Sacrificial layer, 176: Sacrificial film, 177: Sacrificial layer, 200: Display panel, 201: Substrate, 202: Substrate, 203: Functional layer, 211B: Light-emitting element, 211G: Light-emitting element, 211R: Light-emitting element, 211W: Light-emitting element, 211: Light-emitting element, 212: Photodetector, 220: Finger, 221: Contact area, 222: Fingerprint, 223: Imaging area, 225: Stylus, 226: Trajectory, 252: Transistor, 254: Connection part, 258: Transistor, 259: Transistor, 260: Transistor, 261: Insulating layer, 262: Insulating layer, 265: Insulating layer, 268 : insulating layer, 271: conductive layer, 272a: conductive layer, 272b: conductive layer, 273: conductive layer, 275: insulating layer, 278: connection part, 281i: channel formation region, 281n: low resistance region, 281: semiconductor layer, 292: connection layer, 294: insulating layer, 400: display device, 411a: conductive layer, 411b: conductive layer, 411c: conductive layer, 412G: EL layer, 412S: PD layer, 413: common electrode, 414: organic layer, 416: protective layer, 417: light shielding layer, 418: colored layer, 421: insulating layer, 422: resin layer, 430b: light-emitting element, 440: light-receiving element, 442: adhesive layer, 453: substrate,454: Substrate, 455: Adhesive layer, 462: Display unit, 464: Circuit, 465: Wiring, 466: Conductive layer, 472: FPC, 473: IC, 500: Display device, 501: Electrode, 502: Electrode, 512Q_1: Light-emitting unit, 512Q_2: Light-emitting unit, 512Q_3: Light-emitting unit, 512W: Light-emitting unit, 521: Layer, 522: Layer, 523Q_1: Light-emitting layer, 523Q_2: Light-emitting layer, 523Q_3: Light-emitting layer, 524: Layer, 525: Layer, 526: Active layer, 531: Intermediate layer, 540: Protective layer, 545B: Colored layer, 545G: Colored layer, 545R: Colored layer, 550 S: Light-receiving element, 550W: Light-emitting element, 555: Light-receiving unit, 701: Substrate, 702L: Display unit, 702R: Display unit, 702: Display unit, 1240: Capacitor, 1241: Conductive layer, 1243: Insulating layer, 1245: Conductive layer, 1251: Conductive layer, 1252: Conductive layer, 1254: Insulating layer, 1255a: Insulating layer, 1255b: Insulating layer, 1256: Plug, 1261: Insulating layer, 1262: Insulating layer, 1263: Insulating layer, 1264: Insulating layer, 1265: Insulating layer, 1271: Plug, 1274a: Conductive layer, 1274b: Conductive layer, 1274: Plug, 1280: Display module, 1 281: Display section, 1282: Circuit section, 1283a: Pixel circuit, 1283: Pixel circuit section, 1284a: Pixel, 1284: Pixel section, 1285: Terminal section, 1286: Wiring section, 1290: FPC, 1291: Substrate, 1292: Substrate, 1301A: Substrate, 1301B: Substrate, 1301: Substrate, 1310A: Transistor, 1310B: Transistor, 1310: Transistor, 1311: Conductive layer, 1312: Low resistance region, 1313: Insulating layer, 1314: Insulating layer, 1315: Element isolation layer, 1320: Transistor, 1321: Semiconductor layer, 1323: Insulating layer, 1324: Conductive layer, 1325: Conductive layer, 1326: Insulating layer, 1327: Conductive layer, 1328: Insulating layer, 1329: Insulating layer, 1331: Substrate, 1332: Insulating layer, 1335: Insulating layer, 1336: Insulating layer, 1341: Conductive layer, 1342: Conductive layer, 1343: Plug, 1344: Insulating layer, 1345: Insulating layer, 1346: Insulating layer, 1347: Bump, 1348: Adhesive layer, 6500: Electronic equipment, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective member,6511: Display panel, 6512: Optical component, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television equipment, 7101: Enclosure, 7103: Stand, 7111: Remote control unit, 7200: Notebook personal computer, 7211: Enclosure, 7212: Keyboard, 7213: Pointing device Chair, 7214: External connection port, 7300: Digital signage, 7301: Enclosure, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 8000: Camera, 8001: Enclosure, 8002: Display unit, 8003: Operation buttons, 8004: Shutter button, 8006: Lens, 8100: Viewfinder, 8101: Enclosure, 8102: Display unit, 81 03: Button, 8200: Head-mounted display, 8201: Mounting part, 8202: Lens, 8203: Main unit, 8204: Display unit, 8205: Cable, 8206: Battery, 8300: Head-mounted display, 8301: Housing, 8302: Display unit, 8304: Fixing device, 8305: Lens, 8400: Head-mounted display, 8401: Housing, 8402: Mounting part, 8403: Cushioning material, 84 04: Display unit, 8405: Lens, 9000: Housing, 9001: Display unit, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Personal digital assistant, 9102: Personal digital assistant, 9200: Personal digital assistant, 9201: Personal digital assistant,

Claims

[Claim 1] It comprises a first light-emitting element, a light-receiving element, and a first colored layer. The first light-emitting element comprises a first pixel electrode, a first organic layer on the first pixel electrode, and a common electrode on the first organic layer. The light-receiving element includes a second pixel electrode, a second organic layer on the second pixel electrode, and the common electrode on the second organic layer. The first organic layer has the function of emitting white light, The second organic layer comprises a photoelectric conversion material, The first colored layer is arranged superimposed on the first light-emitting element, The photoelectric conversion material is sensitive to the wavelength range of light transmitted through the first colored layer. In the region between the first organic layer and the second organic layer, there is an insulating film and a resin layer. The resin layer has regions that are in contact with the bottom surface and side surface of the insulating film. Display device.

Images