Multilayer electronic components

Abstract

When forming the internal electrodes of a multilayer electronic component with a material that has a higher sintering temperature than Ni internal electrodes, the present invention provides a multilayer electronic component that includes internal electrodes that have a higher sintering temperature than Ni internal electrodes and also have sufficient electrical conductivity, thereby improving secondary effects caused by the interaction between the internal electrodes and the dielectric layer. [Solution] The invention includes a body containing a dielectric layer 111 and internal electrodes 121 and 122 arranged alternately with the dielectric layer, and an external electrode disposed on the body, wherein the internal electrode is formula;M n+1 AX n (n≧1) The material contains one or more compounds selected from the group consisting of MAX material and Silicide material, and auxiliary layers 123 and 124 are arranged at the interface between the internal electrode and the dielectric layer. Here, M is a transition metal element, A is Al, Si, P, S, Cu, Zn, etc., and X is B, C, N, etc.

Description

[Technical Field]

[0001] This invention relates to a stacked electronic component. [Background technology]

[0002] A multilayer ceramic capacitor (MLCC), a type of stacked electronic component, is a chip-type capacitor that is mounted on the printed circuit boards of various electronic products, such as video equipment like liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smartphones and mobile phones, on-board chargers (OBCs) in electric vehicles, and DC-DC converters, to charge or discharge electricity.

[0003] To form the internal electrodes of a multilayer ceramic capacitor, a method can be used in which a conductive paste for the internal electrodes and a dielectric ceramic sheet are laminated, pressed together, and then fired. On the other hand, if the sintering start temperature decreases due to the finer particle size of the nickel (Ni) particles in the conductive paste for the internal electrodes, a sintering mismatch with the main component of the dielectric layer occurs, and this mismatch can deepen as the nickel (Ni) particles become finer.

[0004] One way to mitigate this sintering mismatch between the internal electrodes and the dielectric layer is to add a large amount of co-materials, organic substances, and dispersants to the conductive paste for the internal electrodes. However, the large amount of co-materials, organic substances, and dispersants contained in the conductive paste for the internal electrodes can cause a decrease in the connectivity of the internal electrodes or increase the thickness of the dielectric layer.

[0005] Therefore, there is a need to develop internal electrodes with higher sintering temperatures compared to conventional nickel (Ni) internal electrodes, without the need to add large amounts of co-materials, organic substances, and dispersants. [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] One of the various objectives of the present invention is to provide a multilayer electronic component that includes an internal electrode having a higher sintering temperature than a Ni internal electrode and sufficient electrical conductivity.

[0007] One of the various objectives of the present invention is to improve the secondary effects that may occur due to the interaction between the internal electrode and the dielectric layer when forming the internal electrode of a multilayer electronic component with a material that has a higher sintering temperature than Ni internal electrode.

[0008] However, the object of the present invention is not limited to the above-described content and can be more easily understood in the process of describing specific embodiments of the present invention. [Means for solving the problem]

[0009] A stacked electronic component according to one embodiment of the present invention includes a body containing a dielectric layer and internal electrodes arranged alternately with the dielectric layer, and external electrodes disposed on the body, wherein the internal electrodes include one or more selected from the group consisting of MAX material, which is a compound represented by [Chemical Formula 1], and Silicide material, which is a compound represented by [Chemical Formula 2], and an auxiliary layer can be disposed at the interface between the internal electrodes and the dielectric layer. [Chemical formula 1] M n+1 AX n (n≧1) [Chemical formula 2] Windows 2 (In Chemical Formulas 1 and 2 above, M is one or more selected from the group consisting of transition metal elements, A is one or more selected from the group consisting of aluminum (Al), silicon (Si), phosphorus (P), sulfur (S), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), arsenic (As), cadmium (Cd), indium (In), tin (Sn), iridium (Ir), gold (Au), titanium (Ti), lead (Pb), and bismuth (Bi), and X is one or more selected from the group consisting of boron (B), carbon (C), and nitrogen (N).)

Advantages of the Invention

[0010] One of the various effects of the present invention is that the sintering mismatch between the internal electrode and the dielectric layer is alleviated by including one or more selected from the group consisting of MAX materials and Silicide materials in the internal electrode.

[0011] One of the various effects of the present invention is that when an auxiliary layer is formed at the interface between the internal electrode and the dielectric layer and the internal electrode includes one or more selected from the group consisting of MAX materials and Silicide materials, the secondary effects that may occur due to the interaction between the internal electrode and the dielectric layer are improved.

[0012] However, the diverse and significant advantages and effects of the present invention are not limited to the above-described content and can be more easily understood during the process of explaining the specific embodiments of the present invention.

Brief Description of the Drawings

[0013] [Figure 1] It is a perspective view schematically showing a multilayer electronic component according to an embodiment of the present invention. [Figure 2] It is a cross-sectional view taken along line I-I' of FIG. 1. [Figure 3] It is a cross-sectional view taken along line II-II' of FIG. 1. [Figure 4] It is an enlarged view of region A in FIG. 3. [Figure 5] It is an exploded perspective view showing the components of the main body according to an example.

Embodiments for Carrying Out the Invention

[0014] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into several other forms, and the scope of the present invention is not limited to the embodiments described below. In addition, the embodiments of the present invention are provided to more fully explain the present invention to ordinary technicians. Therefore, the shape and size of elements in the drawings may be enlarged, reduced (or emphasized or simplified) for clearer explanation, and elements denoted by the same reference numerals in the drawings are the same elements.

[0015] In addition, parts not related to the explanation are omitted in the drawings for clearly explaining the present invention, and the sizes and thicknesses of the illustrated components are arbitrarily shown for convenience of explanation, so the present invention is not necessarily limited by the illustration. Also, components having the same function within the scope of the same idea are described using the same reference numerals. Further, throughout the specification, when a certain part "includes" a certain component, it means that other components can be further included, rather than excluding other components, unless otherwise stated.

[0016] In the drawings, the first direction is the direction in which the first internal electrode and the second internal electrode are alternately arranged across the dielectric layer or the thickness T direction, and among the second direction and the third direction which are perpendicular to the first direction, the second direction can be defined as the length L direction, and the third direction can be defined as the width W direction.

[0017] FIG. 1 is a perspective view schematically showing a multilayer electronic component according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the line I-I' of FIG. 1, FIG. 3 is a cross-sectional view taken along the line II-II' of FIG. 1, FIG. 4 is an enlarged view of the A region of FIG. 3, and FIG. 5 is an exploded perspective view showing the components of the main body according to an example.

[0018] A stacked electronic component 100 according to one embodiment of the present invention includes a body 110 including a dielectric layer 111 and internal electrodes 121 and 122 arranged alternately with the dielectric layer, and external electrodes 131 and 132 arranged on the body, wherein the internal electrodes include one or more selected from the group consisting of MAX material, which is a compound represented by [Chemical Formula 1], and Silicide material, which is a compound represented by [Chemical Formula 2], and auxiliary layers 123 and 124 can be arranged at the interface between the internal electrodes and the dielectric layer. [Chemical formula 1] M n+1 AX n (n≧1) [Chemical formula 2] Windows 2 (In chemical formulas 1 and 2 above, M is one or more elements selected from the group consisting of transition metal elements, A is one or more elements selected from the group consisting of aluminum (Al), silicon (Si), phosphorus (P), sulfur (S), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), arsenic (As), cadmium (Cd), indium (In), tin (Sn), iridium (Ir), gold (Au), titanium (Ti), lead (Pb), and bismuth (Bi), and X is one or more elements selected from the group consisting of boron (B), carbon (C), and nitrogen (N).)

[0019] The main body 110 can have the dielectric layer 111 and internal electrodes 121 and 122 arranged alternately. Specifically, the first internal electrode 121 and the second internal electrode 122 can be arranged alternately with the dielectric layer 111 in between.

[0020] There are no particular restrictions on the specific shape of the main body 110, but as shown in the figure, the main body 110 can be hexahedral or a similar shape. Due to the shrinkage of the ceramic powder contained in the main body 110 during the firing process, the main body 110 is not a perfectly straight hexahedron, but can be substantially hexahedral.

[0021] The main body 110 can have a first surface 1 and a second surface 2 facing each other in a first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in a second direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1 and the second surface 2, connected to the third surface 3 and the fourth surface 4, and facing each other in a third direction. At this time, the first direction can be defined as the direction in which the dielectric layers 111 and the internal electrodes 121 and 122 are alternately arranged.

[0022] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated so as to be difficult to confirm without using a scanning electron microscope (SEM).

[0023] According to an embodiment of the present invention, the raw material for forming the dielectric layer 111 is not particularly limited as long as sufficient capacitance can be obtained. For example, a barium titanate-based material, a lead composite perovskite-based material, or a strontium titanate-based material can be used. The barium titanate-based material can include BaTiO3-based ceramic powder. Examples of the ceramic powder include BaTiO3, (Ba 1-x Ca x )TiO3 (0 < x < 1) in which Ca (calcium), Zr (zirconium), etc. are partially solid-solved in BaTiO3, Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca ' x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1), or Ba(Ti 1-y Zr y )O3 (0 < y < 1), etc. That is, the dielectric layer 111 can contain one or more of barium (Ba) and titanium (Ti).

[0024] On the other hand, the average thickness of the dielectric layer 111 does not need to be particularly limited. For example, the average thickness of the dielectric layer 111 may be 0.2 μm or more and 2 μm or less.

[0025] The average thickness of the dielectric layer 111 can refer to the average thickness of the dielectric layer 111 that is placed between the first internal electrode 121 and the second internal electrode 122.

[0026] The average thickness of the dielectric layer 111 can be measured by scanning an image of the cross-section of the main body 110 in the length and thickness direction (LT) using a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the thickness of a single dielectric layer can be measured at 30 equally spaced points along its length in the scanned image, and the average value can be calculated. These 30 equally spaced points can be specified by the capacitance formation section Ac. Furthermore, by extending this average value measurement to 10 dielectric layers and measuring the average values, the average thickness of the dielectric layer can be further generalized.

[0027] The main body 110 may include a capacitance forming portion Ac, which is a region where the first internal electrode 121 and the second internal electrode 122 overlap in a first direction, and cover portions 112 and 113 formed on the upper and lower parts of the capacitance forming portion Ac in the first direction.

[0028] Furthermore, the capacitance-forming portion Ac can be formed by repeatedly stacking multiple first internal electrodes 121 and second internal electrodes 122 with a dielectric layer 111 in between, as a portion that contributes to the capacitance formation of the capacitor.

[0029] The cover portions 112 and 113 may include an upper cover portion 112 positioned on one side of the volume-forming portion Ac in the first direction and a lower cover portion 113 positioned on the other side of the volume-forming portion Ac in the first direction.

[0030] The cover portions 112 and 113 described above can be formed by stacking a single dielectric layer or two or more dielectric layers in the thickness direction on the upper and lower surfaces of the capacitance forming portion Ac, respectively, and can essentially serve to prevent damage to the internal electrodes due to physical or chemical stress.

[0031] The cover portions 112 and 113 described above do not include internal electrodes and may contain the same material as the dielectric layer 111.

[0032] In other words, the cover portions 112 and 113 can include ceramic materials, such as barium titanate (BaTiO3) based ceramic materials.

[0033] On the other hand, the average thickness of the cover portions 112 and 113 is not particularly limited. However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the average thickness tc of the cover portions 112 and 113 may be 15 μm or less. The average thickness of the cover portions 112 and 113 can mean the size in the first direction, and may be the average value of the size in the first direction of the cover portions 112 and 113 measured at five equally spaced points on the upper or lower part of the capacitance forming portion Ac.

[0034] Margin portions 114 and 115 can be arranged on the side surface of the above-mentioned capacity forming portion Ac.

[0035] The margin portions 114 and 115 may include a margin portion 114 located on the fifth surface 5 of the main body 110 and a margin portion 115 located on the sixth surface 6. That is, the margin portions 114 and 115 may be located on both end surfaces of the main body 110 in the third direction (width direction).

[0036] As shown in Figure 3, the margin portions 114 and 115 can represent the region between the interface between both ends of the first internal electrode 121 and the second internal electrode 122 and the body 110 in a cross-section obtained by cutting the body 110 in the width-thickness (WT) direction.

[0037] The margins 114 and 115 can essentially serve to prevent damage to the internal electrodes due to physical or chemical stress.

[0038] The margin portions 114 and 115 are formed by applying conductive paste to the ceramic green sheet, except where the margin portions are formed, to form internal electrodes.

[0039] Furthermore, in order to suppress the step caused by the internal electrodes 121 and 122, after cutting the laminated internal electrodes so that they are exposed on the fifth and sixth surfaces 5 and 6 of the main body, a single dielectric layer or two or more dielectric layers can be laminated on both sides of the capacitance forming portion Ac in the third direction (width direction) to form margin portions 114 and 115.

[0040] On the other hand, the width of the margin portions 114 and 115 does not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the average width of the margin portions 114 and 115 may be 15 μm or less. The average width of the margin portions 114 and 115 can mean the average size of the margin portions 114 and 115 in the third direction, and can be the average value of the third-direction sizes of the margin portions 114 and 115 measured at five equally spaced points on the side surface of the capacitance forming portion Ac.

[0041] The internal electrodes 121 and 122 can be arranged alternately with respect to the dielectric layer 111 in the first direction.

[0042] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122. The first internal electrode 121 and the second internal electrode 122 are arranged alternately facing each other across the dielectric layer 111 that constitutes the main body 110, and can be connected to the third surface 3 and the fourth surface 4 of the main body 110, respectively. Specifically, one end of the first internal electrode 121 may be connected to the third surface, and one end of the second internal electrode 122 may be connected to the fourth surface.

[0043] The first internal electrode 121 is separated from the fourth surface 4 and exposed via the third surface 3, and the second internal electrode 122 can be separated from the third surface 3 and exposed via the fourth surface 4. The first external electrode 130 is positioned on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 140 is positioned on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0044] In other words, the first internal electrode 121 is not connected to the second external electrode 140 but is connected to the first external electrode 130, and the second internal electrode 122 is not connected to the first external electrode 130 but is connected to the second external electrode 140. Therefore, the first internal electrode 121 can be formed at a certain distance apart on the fourth surface 4, and the second internal electrode 122 can be formed at a certain distance apart on the third surface 3.

[0045] In this case, the first internal electrode 121 and the second internal electrode 122 can be electrically isolated from each other by the dielectric layer 111 placed in between them.

[0046] The main body 110 can be formed by alternately stacking ceramic green sheets printed with the first internal electrode 121 and ceramic green sheets printed with the second internal electrode 122, and then firing them.

[0047] The average thickness of the internal electrodes 121 and 122 does not need to be particularly limited. For example, the average thickness of the internal electrodes 121 and 122 may be between 0.2 μm and 2 μm.

[0048] The average thickness of the internal electrodes 121 and 122 can be said to represent the average thickness of the internal electrodes 121 and 122.

[0049] The average thickness of the internal electrodes 121 and 122 can be measured by scanning the cross-section of the main body 110 in the length and thickness direction (LT) with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the thickness of one internal electrode can be measured at 30 equally spaced points along its length in the scanned image, and the average value can be calculated. These 30 equally spaced points can be specified by the capacitance forming section Ac. Furthermore, by extending this average value measurement to 10 internal electrodes and measuring the average value, the average thickness of the internal electrodes can be further generalized.

[0050] External electrodes 131 and 132 can be arranged on the third surface 3 and fourth surface 4 of the main body 110. The external electrodes 131 and 132 may include a first external electrode 131 arranged on the third surface 3 of the main body 110 and connected to a first internal electrode 121, and a second external electrode 132 arranged on the fourth surface 4 of the main body 110 and connected to a second internal electrode 122.

[0051] In this embodiment, a structure in which the stacked electronic component 100 has two external electrodes 131 and 132 is described, but the number and shape of the external electrodes 131 and 132 can be changed depending on the shape of the internal electrodes 121 and 122 or other purposes.

[0052] On the other hand, the external electrodes 131 and 132 can be formed using any material that has electrical conductivity, such as metal, and the specific material can be determined by considering electrical properties, structural stability, etc. Furthermore, they can have a multilayer structure.

[0053] For example, the external electrodes 131 and 132 may include electrode layers 131a and 132a placed on the main body 110 and plating layers 131b and 132b formed on the electrode layers.

[0054] To give a more specific example for the electrode layers 131a and 132a, the electrode layers 131a and 132a may be fired electrodes containing a conductive metal and glass, or resin-based electrodes containing a conductive metal and resin.

[0055] Furthermore, the electrode layers 131a and 132a may be formed in a manner in which a fired electrode and a resin-based electrode are sequentially formed on the main body 110. Also, the electrode layers 131a and 132a may be formed by transferring a sheet containing a conductive metal onto the main body, or by transferring a sheet containing a conductive metal onto a fired electrode.

[0056] Any material with excellent electrical conductivity can be used as the conductive metal in the electrode layers 131a and 132a, but there are no particular limitations. For example, the conductive metal may be one or more of nickel (Ni), copper (Cu), and their alloys.

[0057] The plating layers 131b and 132b play a role in improving mounting characteristics. The types of plating layers 131b and 132b are not particularly limited and may be plating layers containing one or more of Ni, Sn, Pd, and their alloys, and may be formed in multiple layers.

[0058] To give a more specific example for the plating layers 131b and 132b, the plating layers 131b and 132b may be Ni plating layers or Sn plating layers, and may be in a form in which Ni plating layers and Sn plating layers are formed sequentially on the electrode layers 131a and 132a, or may be in a form in which Sn plating layers, Ni plating layers, and Sn plating layers are formed sequentially. Furthermore, the plating layers 131b and 132b may include multiple Ni plating layers and / or multiple Sn plating layers.

[0059] Conventional internal electrodes made of a single Ni composition may suffer from a problem where the connectivity of the internal electrodes decreases due to sintering mismatch caused by the difference in sintering temperature between the Ni-composition internal electrode and the barium titanate (BaTiO3)-based material of the dielectric layer. Furthermore, if a large amount of the same material is added to the internal electrode to mitigate this sintering mismatch between the Ni-composition internal electrode and the dielectric layer, a problem may arise in that the thickness of the dielectric layer increases.

[0060] Therefore, in one embodiment of the present invention, the sintering mismatch between the internal electrodes 121 and 122 and the dielectric layer 111 can be improved by ensuring that the internal electrodes 121 and 122 include one or more selected from the group consisting of MAX material and Silicide material. Furthermore, as a result of improving the sintering mismatch between the internal electrodes 121 and 122 and the dielectric layer 111, it becomes unnecessary to add an excessive amount of co-material when forming the internal electrodes 121 and 122, thus mitigating the problem of increased thickness of the dielectric layer 111.

[0061] In one embodiment, MAX material can refer to a ceramic material that is a precursor of Mxene, a two-dimensional inorganic compound, and is crystalline and has a hexagonal layered structure. These Max materials are ceramic materials but have a metallic level of electrical conductivity (>10). 6 The firing temperature is approximately 100°C to 300°C or higher relative to the firing temperature of Ni (S / m). Therefore, when the internal electrodes 121 and 122 contain MAX material, as in one embodiment of the present invention, secondary effects due to sintering mismatch between the internal electrodes and the barium titanate (BaTiO3) dielectric layer can be mitigated.

[0062] MAX substances can be represented by the following [Chemical Formula 1]. [Chemical formula 1] M n+1 AX n (n≧1) (M is one or more elements selected from the group consisting of transition metal elements; A is one or more elements selected from the group consisting of aluminum (Al), silicon (Si), phosphorus (P), sulfur (S), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), arsenic (As), cadmium (Cd), indium (In), tin (Sn), iridium (Ir), gold (Au), titanium (Ti), lead (Pb), and bismuth (Bi); and X is one or more elements selected from the group consisting of boron (B), carbon (C), and nitrogen (N).)

[0063] In one embodiment, the Silicide substance can be represented by the following [Chemical Formula 2], and similar to the MAX substance described above, 10 6 It can be a material that has high electrical conductivity at the S / m level and a higher firing temperature than Ni. Silicide materials can have various crystal systems depending on the type of element bonded with silicon (Si). Therefore, when the internal electrodes 121 and 122 include a silicate material, as in one embodiment of the present invention, secondary effects due to sintering mismatch between the internal electrodes and the barium titanate (BaTiO3) dielectric layer can be mitigated. [Chemical formula 2] Windows 2 (M is one or more elements selected from the group consisting of transition metal elements.)

[0064] On the other hand, if the internal electrodes 121 and 122 include one or more selected from the group consisting of MAX material and Silicide material, as in one embodiment, some of the ceramic MAX material and Silicide material may diffuse into the dielectric layer 111, changing the composition of the dielectric layer 111 or forming a secondary phase in the dielectric layer 111. This can lead to problems such as a decrease in the dielectric constant of the multilayer electronic component 100 or a decrease in reliability.

[0065] Therefore, in the multilayer electronic component 100 according to an embodiment of the present invention, by arranging the auxiliary layers 123 and 124 at the interface between the internal electrodes 121 and 122 and the dielectric layer 111, it is possible to improve the problems of a decrease in dielectric constant or a decrease in reliability associated with the interaction between the internal electrodes 121 and 122 and the dielectric layer 111, and it is also possible to form a contact resistance at the interface between the internal electrodes 121 and 122 and the dielectric layer 111 to improve the insulation property of the dielectric layer 111.

[0066] In one example, the substances included in the auxiliary layers 123 and 124 can be 2D (Two Dimensional) substances or ultra-thin film substances of 5 nm or less. Examples of 2D or ultra-thin film substances include Maxine (Mxene), Graphene, Hf 1-x Zr x O2 (0 < x < 1), MoTe2, MoSe2, transition metal chalcogenide, 2D perovskite substances, and one or more selected from the group consisting of hexagonal boron nitride (h-BN, Hexagonal Boron Nitride). Such 2D or ultra-thin film substances can prevent interactions such as mass transfer between the internal electrodes 121 and 122 and the dielectric layer 111, and improve the problems of a decrease in dielectric constant or a decrease in reliability due to dielectric composition change or secondary phase generation.

[0067] In particular, when the auxiliary layers 123 and 124 include high dielectric constant (High-K) substances having a dielectric constant of 4 or more, such as HfO2, ZrO2, Hf 1-x Zr x O2 (0 < x < 1) and 2D perovskite (2-dimensional perovskite), since such 2D and ultra-thin film substances have a high bandgap energy of 3.0 eV or more, it is possible to improve the insulation property of the dielectric layer 111 by generating sufficient contact resistance at the interface between the internal electrodes 121 and 122 and the dielectric layer 111.

[0068] On the one hand, if the electrical conductivity of the auxiliary layers 123 and 124 is excessively low, the energy storage density and efficiency may decrease, and it may be difficult to improve the dielectric properties of the dielectric layer 111. Therefore, the auxiliary layers 123 and 124 may use a substance having a semiconductor material level of electrical conductivity, for example, a substance having an electrical conductivity of 10 -6 ~10 2 S / m, which can be effective in improving the insulation properties of the dielectric layer 111. Specifically, in one embodiment, the auxiliary layers 123 and 124 may include one or more selected from the group consisting of Hf 1-x Zr x O2 (0 < x < 1), transition metal chalcogenide, and 2-dimensional perovskite substances, and appropriate energy storage density and efficiency can be ensured.

[0069] In one embodiment, the firing process of the stacked electronic component 100 can proceed through a rapid temperature increase process.

[0070] On the other hand, when the 2-dimensional perovskite substance or metal oxide is included in the auxiliary layers 123 and 124, it may react with the oxide of the dielectric layer 111 during firing. However, since the firing process of the stacked electronic component 100 according to one embodiment can proceed through a rapid temperature increase process, the firing can be completed before the oxides of the auxiliary layers 123 and 124 react with the oxide of the dielectric layer 111.

[0071] On the other hand, if the auxiliary layers 123 and 124 contain one or more of the following: transition metal chalcogenide, graphene, and hexagonal boron nitride (h-BN), then under high pressure firing atmosphere, the substances contained in the auxiliary layers 123 and 124 can be oxidized and react with the internal electrodes 121 and 122 or the dielectric layer 111. Under low pressure, some of the substances contained in the auxiliary layers 123 and 124 can diffuse as internal electrodes 121 and 122 or the dielectric layer 111. However, since the heating process of the stacked electronic component 100 according to one embodiment can proceed via a rapid heating process, the firing can be completed before the substances contained in the auxiliary layers 123 and 124 are oxidized or diffused.

[0072] The specific conditions for the rapid heating process according to one embodiment may be faster than the typical heating rate of 10°C / min for firing, and may be, for example, heating conditions of 100°C / min to 1000°C / min.

[0073] On the other hand, there is no particular limit to the method for measuring whether or not the MAX substance, which is a compound represented by [Chemical Formula 1] and the Silicide substance, which is a compound represented by [Chemical Formula 2] according to one embodiment of the present invention, are present in the internal electrodes 121 and 122.

[0074] Examples include, but are not limited to, a method of matching the peak observed by analyzing the cross-sections in the first and third directions of a multilayer electronic component 100, polished to the center in the second direction, using X-ray diffraction analysis, with the peak of the MAX material or Silicide material, or a method of obtaining compositional information by analyzing the cross-sections in the first and third directions of a multilayer electronic component 100, polished to the center in the second direction, via SEM-EDS (Scanning Electron Microscope Energy Dispersive X-ray Spectroscopy), and matching it with the compositional information of the MAX material or Silicide material.

[0075] In one embodiment, the auxiliary layers 123 and 124 can cover at least a portion of the surface of the internal electrodes 121 and 122. This suppresses the interaction between the internal electrodes 121 and 122 and the dielectric layer 111 due to direct contact.

[0076] On the other hand, it is preferable that the auxiliary layers 123 and 124 cover all surfaces of the internal electrodes 121 and 122 except for the surfaces where the internal electrodes 121 and 122 are connected to the external electrodes 131 and 132. This allows the dielectric layer 111 and the internal electrodes 121 and 122 to have a structure separated by the auxiliary layers 123 and 124, as shown in Figure 4.

[0077] Referring to Figure 4, the average thickness of the internal electrodes can be represented by te, and the average thickness of auxiliary layers 123 and 124 can be represented by tr.

[0078] In one embodiment, tr / te may be between 0.00025 and 0.05.

[0079] If tr / te is less than 0.00025, the effects of the present invention in improving insulation, preventing a decrease in dielectric constant, and preventing interaction between the dielectric layer 111 and the internal electrodes 121 and 122 may be insufficient. If tr / te exceeds 0.05, the resistance of the multilayer electronic component may increase, the dielectric constant may decrease significantly, and it may not be possible to secure sufficient capacitance per unit volume of the multilayer electronic component.

[0080] Therefore, in one embodiment, by ensuring that tr / te is between 0.00025 and 0.05, it is possible to sufficiently obtain the effects of improving insulation, preventing a decrease in dielectric constant, and preventing interaction between the dielectric layer 111 and the internal electrodes 121 and 122, thereby mitigating problems such as an increase in the resistance of the multilayer electronic component or a significant decrease in capacitance per unit volume.

[0081] On the other hand, the average thickness tr of the auxiliary layers 123 and 124 can be determined in relation to the average thickness te of the internal electrodes 121 and 122, but is not limited to this, and may be between 0.5 nm and 5 nm.

[0082] In one embodiment, the dielectric layer 111 may further contain one or more rare earth elements, which can function as barriers that prevent the flow of electrons at the grain boundaries and thus suppress the increase in leakage current.

[0083] In one embodiment, the dielectric layer 111 may further contain one or more elements selected from the group consisting of elements that substitute for the A-site of the ABO3 structure of barium titanate and act as donors, and elements that substitute for the B-site and act as acceptors.

[0084] A donor element that can be substituted at the A-site can play a role in improving dielectric constant by forming electrons, while an acceptor element that can be substituted at the B-site can play a role in reducing dielectric loss by forming oxygen vacancies and improving insulation by confining electrons.

[0085] On the other hand, when pentavalent donor elements and divalent and trivalent acceptor elements are added to BaTiO3 and fired under appropriate conditions, a dielectric layer 111 with a high dielectric constant (7000 or more) can be formed compared to the conventional dielectric constant (around 2000 to 4000 levels). In other words, in one embodiment, the dielectric layer 111 can contain one or more divalent acceptor elements and trivalent acceptor elements, and can also contain pentavalent donor elements, thereby improving the dielectric constant of the dielectric layer 111.

[0086] One or more elements selected from the group consisting of aluminum (Al), gallium (Ga), magnesium (Mg), zinc (Zn), scandium (Sc), indium (In), ytterbium (Yb), thallium (Tl), erbium (Er), and europium (Eu) are elements that can be dissolved in the B-site at an appropriate concentration, taking into account the ionic radius of the tetravalent element Ti (74.5 pm) or the ionic radius of the trivalent element Ti (81 pm). Therefore, in one embodiment, the dielectric layer 111 can contain one or more elements selected from the group consisting of aluminum (Al), gallium (Ga), magnesium (Mg), zinc (Zn), scandium (Sc), indium (In), ytterbium (Yb), thallium (Tl), erbium (Er), and europium (Eu), thereby further enhancing the dielectric constant improvement effect of the dielectric layer 111.

[0087] On the other hand, examples of pentavalent donor elements that are effective in improving the dielectric constant of the dielectric layer 111 include niobium (Nb) and tantalum (Ta). That is, in one embodiment, the dielectric layer 111 may further contain one or more of niobium (Nb) and tantalum (Ta).

[0088] On the other hand, if the dielectric layer 111 contains one or more divalent acceptor elements and trivalent acceptor elements, and one or more pentavalent donor elements to realize a huge dielectric constant of 7000 or more, the dielectric resistance may decrease due to the excessively formed Defect-Cluster structure in the dielectric layer. This can result in a lower BDV characteristic of the multilayer electronic component, and the capacitor element may not be able to fully perform its function. However, according to one embodiment of the present invention, the internal electrodes 121 and 122 include one or more selected from the group consisting of MAX material, which is a compound represented by [Chemical Formula 1], and Silicide material, which is a compound represented by [Chemical Formula 2], and auxiliary layers 123 and 124 are arranged at the interface between the internal electrodes 121 and 122 and the dielectric layer 111. This improves the problem of dielectric constant reduction or reliability reduction due to interaction between the internal electrodes 121 and 122 and the dielectric layer 111, and also improves the insulating properties of the dielectric layer 111 by forming contact resistance at the interface between the internal electrodes 121 and 122 and the dielectric layer 111, thereby suppressing the aforementioned secondary effects due to the large dielectric constant.

[0089] The method for manufacturing a laminated electronic component 100 according to one embodiment of the present invention is not particularly limited. For example, a dielectric sheet can be formed by adding various ceramic additives, organic solvents, binders, dispersants, etc., to a powder such as barium titanate (BaTiO3) according to the purpose of the present invention; an auxiliary layer can be formed on the dielectric sheet by methods such as vapor deposition, transfer, or printing of a 2D high dielectric constant material; a conductive paste for internal electrodes containing one or more substances selected from the group consisting of MAX substances and Silicide substances can be formed on the dielectric sheet using a screen printing method or gravure printing method, etc.; and then an auxiliary layer can be formed again on the printed conductive paste to form a laminate.

[0090] The laminate formed in this manner can undergo a pre-sintering process at 350°C to 800°C to remove organic matter, followed by a main firing process at 1000°C to 1300°C or a low-temperature firing process at 350°C to 800°C under an H2 / H2O / N2 atmosphere. After the firing process, the laminate can be subjected to a termination process and electrode firing with an external electrode paste to complete the laminated electronic component 100.

[0091] Although embodiments of the present invention have been described in detail above, the present invention is not limited by the embodiments described above and the accompanying drawings, but is limited by the claims provided. Therefore, within the scope of the technical idea of ​​the present invention as described in the claims, various forms of substitution, modification, and alteration are possible by persons with ordinary skill in the art, and these also fall within the scope of the present invention.

[0092] Furthermore, the expression "one embodiment" used in this disclosure does not mean that each embodiment is identical to the others, but is provided to highlight and explain the unique and distinct features of each embodiment. However, the above-presented embodiments do not preclude their implementation in combination with features of other embodiments. For example, even if a matter described in one embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment, unless there is a contradictory or contrary explanation of that matter in the other embodiment.

[0093] The terms used in this disclosure are used solely to illustrate one embodiment and are not intended to limit the disclosure. Where otherwise, singular expressions include plural expressions unless the context clearly indicates otherwise. [Explanation of Symbols]

[0094] 100 Stacked Electronic Components 110 Main Unit 111 Dielectric layer 121, 122 Internal electrode 130, 140 external electrode 112, 113 Cover section 114, 115 Margin section

Claims

1. A body including a dielectric layer and internal electrodes arranged alternately with the dielectric layer, The body includes an external electrode disposed on the main body, The internal electrode comprises one or more substances selected from the group consisting of MAX substance, which is a compound represented by the following [Chemical Formula 1], and Silicide substance, which is a compound represented by the following [Chemical Formula 2]. A stacked electronic component in which an auxiliary layer is disposed at the interface between the internal electrode and the dielectric layer. [Chemical formula 1] M ｎ＋１ AX ｎ (n≧1) [Chemical formula 2] MSi ２ (In chemical formulas 1 and 2 above, M is one or more elements selected from the group consisting of transition metal elements; A is one or more elements selected from the group consisting of aluminum (Al), silicon (Si), phosphorus (P), sulfur (S), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), arsenic (As), cadmium (Cd), indium (In), tin (Sn), iridium (Ir), gold (Au), titanium (Ti), lead (Pb), and bismuth (Bi); and X is one or more elements selected from the group consisting of boron (B), carbon (C), and nitrogen (N).)

2. The stacked electronic component according to claim 1, wherein the auxiliary layer covers at least a portion of the surface of the internal electrode.

3. The laminated electronic component according to claim 1, wherein the dielectric layer and the internal electrode are separated by the auxiliary layer.

4. The stacked electronic component according to claim 1, wherein when the average thickness of the internal electrodes is te and the average thickness of the auxiliary layer is tr, tr / te is 0.00025 or more and 0.05 or less.

5. When the average thickness of the auxiliary layer is tr, The multilayer electronic component according to claim 1, wherein tr is 0.5 nm or more and 5 nm or less.

6. The auxiliary layer is Maxine (Mxene), Graphene, HfO ２ , ZrO ２ , Hf １－ｘ Zr ｘ O ２ (0 < x < 1), MoTe ２ , MoSe ２ , a transition metal chalcogenide, a 2-dimensional perovskite substance, and hexagonal boron nitride (h-BN, Hexagonal Boron Nitride), and the stacked electronic component according to claim 1, comprising one or more selected from the group consisting of

7. The auxiliary layer is Hf １－ｘ Zr ｘ O ２ The stacked electronic component according to claim 1, comprising one or more materials selected from the group consisting of (0 < x < 1), transition metal chalcogenides, and 2-dimensional perovskites.

8. The laminated electronic component according to any one of claims 1 to 7, wherein the dielectric layer comprises one or more of Ba and Ti.

9. The laminated electronic component according to claim 8, wherein the dielectric layer further comprises one or more rare earth elements.

10. The laminated electronic component according to claim 8, wherein the dielectric layer further comprises one or more selected from the group consisting of aluminum (Al), gallium (Ga), magnesium (Mg), zinc (Zn), scandium (Sc), indium (In), ytterbium (Yb), thallium (Tl), erbium (Er), and europium (Eu).

11. The laminated electronic component according to claim 8, wherein the dielectric layer further comprises one or more of niobium (Nb) and tantalum (Ta).

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