Semiconductor equipment

Abstract

A semiconductor device with good electrical characteristics and high reliability, and a switching element for the said semiconductor device. The objective is to provide a display device that can be used as a child. [Solution] In a transistor using an oxide semiconductor layer, a small portion of the oxide semiconductor layer Both are needle-shaped structures that grow along the c-axis in a direction perpendicular to the surface on one side of the surface and have an ab-plane parallel to the surface. The structure has a group of crystals, and the parts other than the needle-shaped crystal group are amorphous or a mixture of amorphous and microcrystalline material. By doing so, it is possible to manufacture semiconductor devices with good electrical characteristics and high reliability. ru.

Claims

[Claim 1] A gate electrode layer is placed on the insulating surface, A gate insulating layer is provided on the gate electrode layer, An oxide semiconductor layer is provided on the gate insulating layer, A source electrode layer and a drain electrode layer overlapping a portion of the oxide semiconductor layer are provided on the gate insulating layer. The source electrode layer and the drain electrode layer have an oxide insulating layer in contact with the oxide semiconductor layer, The oxide semiconductor layer has at least one surface side that has needle-shaped crystal groups that grow along the c axis in a direction perpendicular to the surface and have a-b planes parallel to the surface. In the group of needle-shaped crystals, the length in the c-axis direction is 5 times or more than the length in the a-axis direction or the b-axis direction. A semiconductor device wherein the region other than the group of needle-shaped crystals is amorphous or a region in which amorphous and microcrystalline materials are mixed.

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