Semiconductor equipment

JP2026094229APending Publication Date: 2026-06-09SEMICON ENERGY LAB CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SEMICON ENERGY LAB CO LTD
Filing Date
2026-02-20
Publication Date
2026-06-09

AI Technical Summary

Benefits of technology

【0025】 本発明の一態様により、酸化物半導体膜と該酸化物半導体膜と接するゲート絶縁膜との界 面状態が良好なトランジスタを有する半導体装置を作製することができる。また、安定し た電気的特性を有する半導体装置を作製することができる。また、マザーガラスのような 大きな基板を用いて、信頼性の高い半導体装置を大量生産することができる。

✦ Generated by Eureka AI based on patent content.

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Abstract

To provide stable electrical characteristics to transistors using oxide semiconductor films as channels. To manufacture highly reliable semiconductor devices. [Solution] An oxide semiconductor film that can become a first crystalline structure by heat treatment, and A second crystalline structure is formed by stacking oxide semiconductor films, and then a heat treatment is performed. Thus, using an oxide semiconductor film having a second crystal structure as a seed, a first crystal structure is obtained. Crystal growth is performed on the oxide semiconductor film. The oxide semiconductor film formed in this way is then subjected to a transient process. It is used in the active layer of the product.
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Claims

1. A first insulating film and The oxide semiconductor laminate on the first insulating film, The second insulating film on the oxide semiconductor laminate, It has a terminal station, The oxide semiconductor laminate comprises a first oxide semiconductor film having indium, gallium, and zinc, and a second oxide semiconductor film having a region in contact with the upper surface of the first oxide semiconductor film and having a different crystal structure from the first oxide semiconductor film. The second oxide semiconductor film is a semiconductor device having regions with higher crystallinity than the first oxide semiconductor film.

2. Terminal gate and, The first insulating film on the gate electrode, The oxide semiconductor laminate on the first insulating film, The oxide semiconductor laminate comprises a second insulating film, The oxide semiconductor laminate comprises a first oxide semiconductor film having indium, gallium, and zinc, and a second oxide semiconductor film having a region in contact with the upper surface of the first oxide semiconductor film and having a different crystal structure from the first oxide semiconductor film. The second oxide semiconductor film is a semiconductor device having regions with higher crystallinity than the first oxide semiconductor film.