Substrate processing method

Abstract

This invention provides a technique for forming a metal-containing film having openings on a substrate film. [Solution] The substrate processing method includes the steps of: (a) forming a first resist film on a base film; (b) subjecting the first resist film to a first exposure treatment and a first development treatment to form a first opening in the first resist film; (c) supplying a raw material gas containing a first metal-containing precursor to fill the first opening with a first fluidized film containing the metal contained in the first metal-containing precursor at a temperature lower than the boiling point of the first metal-containing precursor, and then curing the first fluidized film to form a first metal-containing film in the first opening; (d) removing the first resist film and forming a second opening in the first metal-containing film; (e) forming a second resist film on a substrate including a base film and a first metal-containing film; (f) forming a third opening in the second resist film; (g) forming a second metal-containing film in the third opening; and (h) forming a fourth opening in the second metal-containing film.

Description

【Technical Field】 【0001】 The present disclosure relates to a substrate processing method. 【Background Art】 【0002】 There is known a technique of selectively forming a thin film of metal oxide or metal nitride on the surface of a substrate layer which is the base of a patterned resist, leaving the thin film of metal oxide or metal nitride on the surface of the substrate layer, and removing the resist (see, for example, Patent Document 1). 【Prior Art Documents】 【Patent Documents】 【0003】 【Patent Document 1】 U.S. Patent Application Publication No. 2018 / 0308687 【Summary of the Invention】 【Problems to be Solved by the Invention】 【0004】 The present disclosure provides a technique for forming a metal-containing film having an opening on an underlying film. 【Means for Solving the Problems】 【0005】 A substrate processing method according to one aspect of the present disclosure is a step of (a) forming a first resist film on a substrate film; (b) subjecting the first resist film to a first exposure treatment and a first development treatment to form a first opening in the first resist film; (c) supplying a raw material gas containing a first metal-containing precursor to fill the first opening with a first fluidized film containing the metal contained in the first metal-containing precursor at a temperature lower than the boiling point of the first metal-containing precursor, and then curing the first fluidized film to form a first metal-containing film in the first opening; (d) removing the first resist film to form a second opening in the first metal-containing film; (e (f) a step of forming a second resist film on a substrate including the underlayer film and the first metal-containing film; (g) a step of subjecting the second resist film to a second exposure treatment and a second development treatment to form a third opening in the second resist film; (h) a step of supplying a raw material gas containing a second metal-containing precursor to fill the third opening with a second fluidized film containing the metal contained in the second metal-containing precursor at a temperature lower than the boiling point of the second metal-containing precursor, and then curing the second fluidized film to form a second metal-containing film in the third opening; and (h) a step of removing the second resist film to form a fourth opening in the second metal-containing film. [Effects of the Invention] 【0006】 According to this disclosure, a metal-containing film having openings can be formed on a substrate film. [Brief explanation of the drawing] 【0007】 [Figure 1] This is a flowchart showing the substrate processing method according to the first embodiment. [Figure 2] This is a schematic perspective view showing a substrate for illustrating the substrate processing method according to the first embodiment. [Figure 3] Figure 1 is a flowchart showing an example of steps S104 and S105. [Figure 4] These are schematic cross-sectional diagrams of the substrate in each step S104 and step S105. [Figure 5]This is a schematic diagram illustrating an example of the reaction process from the first metal-containing precursor to the formation of the first flow membrane. [Figure 6] This is a schematic plan view showing the circuit board used to explain step S111. [Figure 7] This is a flowchart showing a substrate processing method according to the second embodiment. [Figure 8] This is a schematic perspective view showing a substrate for illustrating the substrate processing method according to the second embodiment. [Figure 9] This is a diagram showing an example of the configuration of a substrate processing system. [Figure 10] This is a schematic diagram showing an example of the configuration of a processing system including the first to fourth processing units of a substrate processing system. [Figure 11] This is a schematic diagram showing an example of a substrate processing apparatus for performing a film deposition process on a substrate. [Modes for carrying out the invention] 【0008】 Hereinafter, exemplary embodiments of the present disclosure, not limited to those described herein, will be described with reference to the attached drawings. In all attached drawings, identical or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted. 【0009】 [Substrate Processing Method] <First Embodiment> The substrate processing method according to the first embodiment will be described with reference to Figures 1 to 6. Figure 1 is a flowchart of the substrate processing method according to the first embodiment. Figure 2 is a schematic perspective view showing a substrate 100 for illustrating the substrate processing method according to the first embodiment. Figure 3 is a flowchart of an example of steps S104 and S105 shown in Figure 1. Figure 4 is a schematic cross-sectional view of the substrate 100 in each step of steps S104 and S105. Figure 5 is a schematic diagram showing an example of the reaction process from the first metal-containing precursor to the generation of the first flow film 131. Figure 6 is a schematic plan view showing the substrate 100 for illustrating step S111. 【0010】 The substrate processing method according to the first embodiment includes steps S101 to S111 shown in Figure 1. Step S101 includes preparing a substrate 100 having a base film 110. Preparing the substrate 100 includes, for example, loading the substrate 100 into a coating apparatus 410, which will be described later. 【0011】 The undercoat 110 may, for example, be an amorphous silicon film. However, the undercoat 110 may be a film other than an amorphous silicon film. Examples of films other than amorphous silicon films include single-crystal silicon films, polycrystalline silicon films, silicon oxide films, silicon nitride films, hafnium oxide films, zirconium oxide films, carbon-containing films, ITO films (Indium Tin Oxide), IGZO films, tungsten films, titanium films, titanium nitride films, and molybdenum films. The undercoat 110 may also have other films such as a back surface anti-reflective film. The type of undercoat 110 can be appropriately selected considering the etching selectivity for the first metal-containing film 132, the filler film 140, and the second metal-containing film 162, which will be described later. 【0012】 Step S102 is performed after step S101. Step S102 includes forming a first resist film 120 on the base film 110. In step S102, the first resist film 120 is applied to cover the upper surface of the base film 110 using, for example, a coating apparatus 410 described later. The first resist film 120 is formed using, for example, a coating method such as spin coating. 【0013】 The first resist film 120 is formed from a photoresist composition. The photoresist composition is, for example, a chemically amplified type. The first resist film 120 may or may not have a functional group that bonds with metal M in step S104 described later. The functional group can be any common type, such as a carboxyl group, a phenyl group, or an acrylic group. The first resist film 120 may be a negative-type photoresist film or a positive-type photoresist film. 【0014】 After step S102, step S103 is performed. Step S103 includes subjecting the first resist film 120 to a first exposure process and a first development process to form a first opening 120r in the first resist film 120. Step S103 is performed, for example, using an exposure apparatus 420 and a development apparatus 430 described later. 【0015】 In step S103, the first exposure process and the first development process are performed in sequence. In the first exposure process, light emitted from the light source of the exposure apparatus is irradiated onto the first resist film 120 through a photomask. The first exposure process may be a liquid immersion exposure process or an EUV (Extreme Ultraviolet) exposure process. Thereby, an exposed portion and an unexposed portion corresponding to the pattern of the photomask are formed in the first resist film 120. 【0016】 Subsequently, by the first development process, either the exposed portion or the unexposed portion of the first resist film 120 is selectively removed. In the first development process, at least one of a wet process and a dry process can be used. When the first resist film 120 is composed of a negative-type photoresist film, the unexposed portion is selectively removed by the first development process, and the exposed portion remains. On the other hand, when the first resist film 120 is composed of a positive-type photoresist film, the exposed portion is selectively removed by the first development process, and the unexposed portion remains. 【0017】 FIG. 2(a) is a perspective view schematically showing a substrate 100 including the first resist film 120 after the first opening 120r is formed. As shown in FIG. 2(a), by subjecting the first resist film 120 to the first development process, a first opening pattern including the first opening 120r is formed. In the example shown in FIG. 2(a), the first opening 120r has a trench shape that depresses from the upper surface of the first resist film 120 toward the underlying film 110. However, the shape of the first opening 120r is not limited to the trench shape. In the example shown in FIG. 2(a), the first opening 120r has a trench shape extending in the first direction. 【0018】 Step S103 is followed by steps S104 and S105. Step S104 includes forming a first metal-containing film 132 on the first opening 120r. Step S105 includes removing the first resist film 120 and forming a second opening 132r in the first metal-containing film 132. Steps S104 and S105 will be described in detail with reference to Figures 3 to 5. 【0019】 As shown in Figure 3, step S104 includes, for example, steps S104a and S104b. Step S104a includes supplying a raw material gas containing a first metal-containing precursor to fill the first opening 120r with a first fluidized membrane 131 containing metal M contained in the first metal-containing precursor. Step S104a may also include filling the first fluidized membrane 131 such that the upper surface of the first metal-containing membrane 132 is located above the upper surface of the first resist membrane 120. Step S104a is performed, for example, using the first processing apparatus PM1 described later. 【0020】 In step S104a, the first fluidized film 131 is filled into the first opening 120r at a temperature lower than the boiling point of the first metal-containing precursor. Specifically, the temperature of the substrate 100 in step S104a is lower than the boiling point of the first metal-containing precursor. A temperature lower than the boiling point of the first metal-containing precursor is, for example, a temperature below room temperature. However, the temperature of the substrate 100 in step S104a may be higher than room temperature, as long as it is lower than the boiling point of the first metal-containing precursor. 【0021】 When the raw material gas is supplied into the processing container 10, the pressure inside the processing container 10 is reduced to a pressure lower than atmospheric pressure (for example, a vacuum atmosphere). That is, the boiling point of the first metal-containing precursor is the boiling point under the pressure inside the processing container 10 when the raw material gas is supplied. For example, if the pressure inside the processing container 10 is reduced to a pressure lower than atmospheric pressure, the boiling point of the first metal-containing precursor refers to the boiling point under the reduced pressure inside the processing container 10, not the boiling point under atmospheric pressure. 【0022】 The first metal-containing precursor contains metal M. The first metal-containing precursor is, for example, an amino metal compound. An amino metal compound is a compound containing metal M and two or more amino groups bonded to metal M. Examples of amino metal compounds include bis-DMADMS (Bis(dimethylamino)dimethylsilane), TDMAS (Tris(dimethylamino)silane), BTBAS (Bis(t-butylamino)silane), BDEAS (Bis(diethylamino)silane), Bis-DMADMSn (Bis(dimethylamino)dimethyltin), TDMASn (Tetrakis(dimethylamino)tin), TDMAHf (Tetrakis(dimethylamino)hafnium), and TDMATi (Tetrakis (dimethylamino)titanium), TDMAGe(Tris(dimethylamino)germanium), Bis-BTMSG(Bis[bis(trimethylsilyl)amide]germanium), TDMAZr(Tetrakis(dimethylamino) zirconium), BTBIBDMAW (Bis(tert-butylimino)bis(dimethylamino)tungsten), Al(NMe2)3(Tris(dimethylamino)aluminum), Al2(NMe2)6(Tris(dimethylamino)alane dimer) is used. 【0023】 Metal M may include metalloids such as boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), and tellurium (Te). Examples of metal M include Si, Ge, hafnium (Hf), tin (Sn), titanium (Ti), zirconium (Zr), tungsten (W), or aluminum (Al). However, metal M may be a different metal from these. 【0024】 Referring to Figure 5, an example of the reaction process from the first metal-containing precursor to the formation of the first flow membrane 131 is described. Figure 5(a) shows bis-DMADMS, an example of the first metal-containing precursor. Figure 5(b) shows an example of a silanol, an intermediate produced from the first metal-containing precursor. Figure 5(c) shows polydimethylsiloxane, an example of the first flow membrane 131. Figure 5(d) shows octamethylcyclotetrasiloxane, another example of the first flow membrane 131. 【0025】 However, the first metal-containing precursor is not limited to the compound shown in Figure 5(a). The first metal-containing precursor may be an amino metal compound containing a metal M different from Si, such as Ge, Hf, Sn, Ti, Zr, W, and Al. Furthermore, when the first metal-containing precursor is an amino metal compound, the amino group contained in the amino metal compound includes, for example, a methyl group, as shown in Figure 5(a). However, the amino group contained in the amino metal compound may also contain an organic group different from the methyl group. An organic group different from the methyl group is, for example, a hydrogen (H) atom or an alkyl group other than a methyl group. Furthermore, the first metal-containing precursor may be a compound containing a metal M different from these metals. 【0026】 The intermediate produced from the first metal-containing precursor is not limited to the silanol shown in Figure 5(b). The intermediate produced from the first metal-containing precursor can be appropriately changed depending on the type of first metal-containing precursor. The polysiloxane as the first fluidized membrane 131 is not limited to the polydimethylsiloxane shown in Figure 5(c) and the octamethylcyclotetrasiloxane shown in Figure 5(d). The polysiloxane as the first fluidized membrane 131 may be other polysiloxanes such as hexamethylcyclotrisiloxane or decamethylcyclopentasiloxane. The first fluidized membrane 131 can be appropriately changed depending on the type of intermediate produced from the metal-containing precursor. 【0027】 When the raw material gas is supplied into the processing container 10, the bis-DMADMS shown in Figure 5(a) reacts with H2O molecules to produce, for example, silanol and dimethylamine shown in Figure 5(b). The H2O molecules may also be water vapor (H2O molecules) contained in the additive gas supplied into the processing container 10 along with the raw material gas. Alternatively, the H2O molecules may also be H2O molecules contained in the first resist film 120. Furthermore, the H2O molecules may be H2O molecules that remained in the processing container 10 before the raw material gas was supplied, or H2O molecules that entered the processing container 10 from the outside when the raw material gas was supplied. 【0028】 After bis-DMADMS reacts with H2O molecules to produce silanols, dehydration condensation reactions occur between multiple silanols to produce polysiloxanes such as polydimethylsiloxane shown in Figure 5(c) and octamethylcyclotetrasiloxane shown in Figure 5(d). Meanwhile, the H2O molecules removed in the silanol dehydration condensation reaction react with bis-DMADMS in the raw material gas remaining in the processing container 10. This generates new silanols. In other words, once the reaction between bis-DMADMS and H2O molecules begins, polysiloxanes such as those shown in Figures 5(c) and 5(d) continue to be produced in the processing container 10, regardless of whether new H2O molecules are supplied. 【0029】 The polysiloxane produced through the reaction process shown in Figure 5 adheres to the substrate 100 (the surface of the first resist film 120), thereby forming the first fluidized film 131. Since the temperature of the substrate 100 is lower than the boiling point of bis-DMADMS in step S104a, the first fluidized film 131 contains liquid-phase polysiloxanes such as liquid-phase polydimethylsiloxane and liquid-phase octamethylcyclotetrasiloxane. Therefore, the first fluidized film 131 is fluid during the period in which step S104a is performed. Even if the first metal-containing precursor is a metal-containing compound different from bis-DMADMS, the first fluidized film 131 also contains a liquid-phase compound produced using the first metal-containing precursor as a starting material. 【0030】 Figure 4(a) is a schematic cross-sectional view of the initial stage in which the first fluidized film 131 is attached to the surface of the first resist film 120 (side and top surfaces of the first resist film 120). Figure 4(b) is a schematic cross-sectional view of the stage in which the first fluidized film 131 is filled into the first opening 120r. In step S104a, the temperature of the substrate 100 is set to a temperature lower than the boiling point of the first metal-containing precursor, which suppresses the bonding between the metal M contained in the first metal-containing precursor and the functional groups contained in the first resist film 120. In other words, the penetration of metal M into the first resist film 120 is limited. Therefore, as shown in Figure 4(a), in the initial stage, the first fluidized film 131 is formed on the surface of the first resist film 120. Also, as a result of limiting the penetration of metal M into the first resist film 120, as shown in Figure 4(b), the first fluidized film 131 is deposited on the outside of the first resist film 120. In other words, the first fluidized film 131 is filled into the first opening 120r located outside the first resist film 120. The first fluidized film 131 fills the first opening 120r while maintaining its fluidity. Therefore, voids and seams within the film can be reduced compared to the case where a solid-phase compound is embedded in the first opening 120r. This makes it possible to form a conformal first fluidized film 131. 【0031】 Step S104b is performed after step S104a. Step S104b includes supplying an oxidizing gas into the processing container 10 and curing the first fluidized film 131 filled in the first opening 120r to form a first metal-containing film 132 on the first opening 120r. In step S104b as well, the pressure inside the processing container 10 may be reduced to a pressure lower than atmospheric pressure (for example, a vacuum atmosphere). Step S104b is performed, for example, using the first processing apparatus PM1 described later. 【0032】 As the oxidizing agent included in the oxidizing gas, for example, O2 molecules, ozone (O3) molecules, CO2 molecules, SO2 molecules, or O2 plasma, CO2 plasma, or SO2 plasma can be used. Figure 4(c) is a schematic cross-sectional view of the substrate 100 including the first metal-containing film 132. As the first fluidized film 131 is cured by the oxidizing agent, the first metal-containing film 132 is formed on the first opening 120r, as shown in Figure 4(c). As mentioned above, since voids and seams in the first fluidized film 131 are reduced, voids and seams in the first metal-containing film 132 obtained by curing the first fluidized film 131 are also reduced. That is, in step S104b, a conformal first metal-containing film 132 can be formed. If the upper surface of the first fluidized film 131 is located above the upper surface of the first resist film 120, the upper surface of the first metal-containing film 132 is also located above the upper surface of the first resist film 120. 【0033】 The first metal-containing film 132 is a film containing metal M and oxygen (O). The first metal-containing film 132 may further contain organic groups derived from the first metal-containing precursor. Examples of organic groups derived from the first metal-containing precursor include H atoms and alkyl groups. If the first fluidized film 131 contains polysiloxane, the first metal-containing film 132 is a silicon oxide-like film. 【0034】 If the first metal-containing precursor is a compound containing Sn, such as bis-DMADMSn and TDMASn, the first metal-containing film 132 is a tin oxide-like film. If the first metal-containing precursor is a compound containing Hf, such as TDMAHf, the first metal-containing film 132 is a hafnium oxide-like film. If the first metal-containing precursor is a compound containing Ti, such as TDMATi, the first metal-containing film 132 is a titanium oxide-like film. If the first metal-containing precursor is a compound containing Ge, such as TDMAGe, the first metal-containing film 132 is a germanium oxide-like film. If the first metal-containing precursor is a compound containing Zr, such as TDMAZr, the first metal-containing film 132 is a zirconium oxide-like film. If the first metal-containing precursor is a compound containing W, such as BTBIBDMAW, the first metal-containing film 132 is a tungsten oxide-like film. When the first metal-containing precursor is an Al-containing compound such as Al(NMe2)3, the first metal-containing film 132 is an aluminum oxide-like film. 【0035】 Furthermore, after step S104a, the first fluidized film 131 can also be cured by, for example, opening the processing container 10 to the atmosphere and introducing O2 molecules into the processing container 10. That is, the first metal-containing film 132 can be obtained by curing the first fluidized film 131 with O2 molecules introduced into the processing container 10. In this case, the supply of oxidizing gas into the processing container 10 in step S104b can be omitted. 【0036】 Step S104 may include repeating steps S104a and S104b multiple times. The number of times steps S104a and S104b are repeated can be appropriately changed depending on the amount of the first metal-containing film 132 deposited. 【0037】 Step S104 may include supplying a purge gas into the processing container 10 after step S104b. The purge gas discharges any remaining first metal-containing precursor from the processing container 10 to the outside of the processing container 10. The purge gas also discharges any excess first metal-containing precursor physically adsorbed on the surface of the first metal-containing film 132 to the outside of the processing container 10. The purge gas is, for example, nitrogen (N2) gas or argon (Ar) gas. 【0038】 An example of the processing conditions for step S104 is as follows: • Flow rate of raw material gas: 1 sccm to 100 sccm • Flow rate of added gas: 1 sccm to 100 sccm • Oxidizing gas flow rate: 100 sccm to 1000 sccm • Temperature of substrate 100: -20°C to 40°C (however, not exceeding the boiling point of the first metal-containing precursor under the pressure inside the processing container 10.) • Temperature inside the processing container 10, excluding the substrate 100: 30°C to 200°C • Processing pressure: 1 Torr ~ 500 Torr (133 Pa ~ 66660 Pa) Processing time: 60 seconds to 1200 seconds 【0039】 Step S105 is performed after step S104. As shown in Figure 3, step S105 includes, for example, steps S105a and S105b. Step S105a includes removing the first metal-containing film 132 on the first resist film 120 to expose the first resist film 120. Step S105a is performed, for example, using the second processing apparatus PM2 described later. 【0040】 Step S105a is performed when, in step S104, the first metal-containing film 132 is formed such that its upper surface is located above the upper surface of the first resist film 120. Therefore, if, at the stage when step S104 is performed, the upper surface of the first metal-containing film 132 and the upper surface of the first resist film 120 are on the same plane and the first resist film 120 is exposed, step S105a can be omitted. 【0041】 Figure 4(d) is a schematic cross-sectional view of the substrate 100 after the first metal-containing film 132 on the first resist film 120 has been removed. As shown in Figure 4(d), when the first metal-containing film 132 on the first resist film 120 is removed, the upper surface of the first metal-containing film 132 is located on the same plane as, for example, the upper surface of the first resist film 120. 【0042】 In step S105a, the first metal-containing film 132 on the first resist film 120 is etched to expose the first resist film 120. The etching gas used for etching the first metal-containing film 132 on the first resist film 120 is, for example, a gas containing halogens such as fluorine (F), chlorine (Cl), or bromine (Br), or a noble gas (helium (He) gas, Ar gas, xenon (Xe) gas, krypton (Kr) gas). Examples of gases containing F are CF4 gas or SF6 gas. Examples of gases containing Cl are Cl2 gas or BCl3 gas. Examples of gases containing Br are HBr gas. The etching gas may be a single gas or a mixed gas. The etching gas can be appropriately selected according to the composition of the first metal-containing film 132. 【0043】 If the first metal-containing film 132 is a silicon oxide-like film, for example, CF4 gas can be used as the etching gas. If the first metal-containing film 132 is a tin oxide-like film, for example, a mixed gas of HBr gas and Ar gas, or CF4 gas can be used as the etching gas. If the first metal-containing film 132 is a hafnium oxide-like film, for example, a mixed gas of Cl2 gas and BCl3 gas, SF6 gas, or a mixed gas of CF4 gas and H2 gas can be used as the etching gas. If the first metal-containing film 132 is a titanium oxide-like film or a tungsten oxide-like film, for example, a mixed gas of Cl2 gas and BCl3 gas can be used as the etching gas. If the first metal-containing film 132 is a germanium oxide-like film, a zirconium oxide-like film, or an aluminum oxide-like film, an etching gas capable of removing these films can be appropriately selected. 【0044】 In step S105a, the exposure of the upper surface of the first resist film 120 can be determined, for example, based on a detection signal output from the OES (Optical Emission Spectrometer) of the second processing apparatus PM2. In step S105a, for example, if the OES detects a carbon component contained in the first resist film 120, the etching process of the first metal-containing film 132 is stopped. 【0045】 Step S105b is performed after step S105a. Step S105b includes removing the first resist film 120. Specifically, the first resist film 120 with its upper surface exposed is etched while leaving the first metal-containing film 132 in the first opening 120r of the first resist film 120. As a result of the removal of the first resist film 120, a second opening pattern including the second opening 132r is formed in the first metal-containing film 132. Step S105b is performed, for example, using the third processing apparatus PM3 described later. 【0046】 The etching gas used for etching the first resist film 120 can be, for example, a gas containing oxygen. Examples of oxygen-containing gases include O2 gas, CO2 gas, SO2 gas, or COS gas. The etching gas used for etching the first resist film 120 can be appropriately selected depending on the composition of the first resist film 120 and its selectivity ratio with the first metal-containing film 132. 【0047】 Figure 4(e) is a schematic cross-sectional view of the substrate 100 including the first metal-containing film 132 after the second opening 132r has been formed. Figure 2(b) is a schematic perspective view of the substrate 100 shown in Figure 4(e). As shown in Figures 2(b) and 4(e), the second opening pattern including the second opening 132r is an inverted opening pattern of the first opening pattern of the first resist film 120. That is, the second opening 132r is located where the first resist film 120 was located, and the first metal-containing film 132 is located where the first opening 120r of the first resist film 120 was located. In the example shown in Figures 2(b) and 4(e), the second opening 132r has a trench shape that is recessed from the upper surface of the first metal-containing film 132 toward the underlayer film 110. However, the shape of the second opening 132r is not limited to a trench shape. In the example shown in Figure 2(b), the second opening 132r has a trench shape extending in the first direction, similar to the first opening 120r. 【0048】 By performing steps S104 and S105, a second opening pattern, which is the inverse of the first opening pattern of the first resist film 120, can be formed on the first metal-containing film 132, which is different from the first resist film 120. Therefore, the roughness of the first opening pattern of the first resist film 120 is not reflected in the second opening pattern of the first metal-containing film 132. As a result, by performing steps S104 and S105, a second opening pattern with reduced roughness compared to the first opening pattern can be obtained. Furthermore, the first metal-containing film 132 is located where the first opening 120r of the first resist film 120 was formed. Therefore, even if a bridge defect exists within the first opening 120r of the first resist film 120, the bridge defect can be covered by the first metal-containing film 132. This makes it possible to obtain an opening pattern with fewer bridge defects. 【0049】 Referring again to Figures 1 and 2, the steps from step S106 onward will be described. As shown in Figure 1, step S106 is performed after step S105. Step S106 includes forming a filling film 140 that fills the second opening 132r. Step S106 is performed, for example, using the coating apparatus 410 described later. The filling film 140 is formed using a coating method such as spin coating. The filling film 140 is, for example, a carbon-containing film. However, the filling film 140 is not limited to a carbon-containing film. 【0050】 In step S106, after forming the filler film 140 such that its upper surface is located above the upper surface of the first metal-containing film 132, the filler film 140 above the first metal-containing film 132 may be removed. Figure 2(c) is a schematic perspective view of the substrate 100 including the filler film 140. As shown in Figure 2(c), by removing the filler film 140 above the upper surface of the first metal-containing film 132, the upper surface of the filler film 140 is located on the same plane as, for example, the upper surface of the first metal-containing film 132. 【0051】 Step S107 is performed after step S106. Step S107 includes forming a second resist film 150 on a substrate 100 including the undercoat 110 and the first metal-containing film 132. In the first embodiment, in step S107, the second resist film 150 is formed on the first metal-containing film 132 and the filler film 140. The configuration of the second resist film 150 may be the same as that of the first resist film 120. The method for forming the second resist film 150 may be the same as that for forming the first resist film 120. Step S107 is performed, for example, using a coating apparatus 410 described later. 【0052】 Step S108 is performed after step S107. Step S108 includes subjecting the second resist film 150 to a second exposure treatment and a second development treatment to form a third opening 150r in the second resist film 150. In step S108, the second exposure treatment and the second development treatment are performed in order. The second exposure treatment may be the same as the first exposure treatment, except that the resist film to be exposed is the second resist film 150. The second development treatment may be the same as the second development treatment, except that the resist film to be developed is the second resist film 150. Step S108 is performed, for example, using the exposure apparatus 420 and development apparatus 430 described later. 【0053】 The second development process removes either the exposed or unexposed portion of the second resist film 150, thereby forming the third opening 150r. Figure 2(d) is a schematic perspective view of the substrate 100 including the second resist film 150 after the third opening 150r has been formed. As shown in Figure 2(d), the second development process applied to the second resist film 150 forms a third opening pattern including the third opening 150r. In the example shown in Figure 2(d), the third opening 150r has a trench shape that is recessed from the upper surface of the second resist film 150 toward the first metal-containing film 132 and the filler film 140. However, the shape of the third opening 150r is not limited to a trench shape. In the example shown in Figure 2(d), the third opening 150r has a trench shape that extends in the second direction. 【0054】 Step S109 is performed after step S108. Step S109 includes forming a second metal-containing film 162 on the third opening 150r. Specifically, step S109 includes supplying a raw material gas containing a second metal-containing precursor to fill the third opening 150r with a second fluidized film 161 containing metal M contained in the second metal-containing precursor at a temperature lower than the boiling point of the second metal-containing precursor. Hereinafter, this step will be referred to as the "step of filling the third opening 150r with the second fluidized film 161". Furthermore, after performing the step of filling the third opening 150r with the second fluidized film 161, step S109 includes forming a second metal-containing film 162 on the third opening 150r by curing the second fluidized film 161. Hereinafter, this step will be referred to as the "step of forming a second metal-containing film 162 on the third opening 150r". Step S109 is performed, for example, using the first processing device PM1 described later. 【0055】 In step S109, the step of filling the third opening 150r with the second fluidized membrane 161 may be the same as in step S104a shown in Figure 3, except that the membrane to be filled is the second fluidized membrane 161. That is, an amino metal compound containing the metal M listed in the first metal-containing precursor can be used as the second metal-containing precursor. Furthermore, the metal M contained in the second metal-containing precursor may also be one of the metals listed as metal M contained in the first metal-containing precursor. 【0056】 Figure 2(e) is a schematic perspective view showing the substrate 100 including the second fluidized film 161. As shown in Figure 2(e), the second fluidized film 161 can be obtained filling the third opening 150r in a fluid state. The process until the second fluidized film 161 is filled into the third opening 150r may be the same as the process until the first fluidized film 131 is filled into the first opening 120r shown in Figures 4(a), 4(b), and 5. This makes it possible to obtain a conformal second fluidized film 161 with reduced voids and seams within the film, similar to the first fluidized film 131. In the example shown in Figure 2(e), the upper surface of the second fluidized film 161 is located above the upper surface of the second resist film 150. 【0057】 In step S109, the step of forming the second metal-containing film 162 on the third opening 150r may be the same as in step S104b shown in Figure 3, except that the film to be formed is the second metal-containing film 162. That is, the second fluidized film 161 can be cured using an oxidizing agent or O2 molecules introduced into the processing container 10, and the second metal-containing film 162 can be formed on the third opening 150r. 【0058】 By performing the step of depositing a second metal-containing film 162 on the third opening 150r, a conformal second metal-containing film 162 can be formed. The second metal-containing film 162 may be a silicon oxide-like film, a tin oxide-like film, a hafnium oxide-like film, a titanium oxide-like film, a germanium oxide-like film, a zirconium oxide-like film, a tungsten oxide-like film, or an aluminum oxide-like film, similar to the first metal-containing film 132. 【0059】 Figure 2(f) is a schematic perspective view of the substrate 100 including the second metal-containing film 162. As shown in Figure 2(f), the second metal-containing film 162 is obtained by curing the second fluidized film 161, which covers at least the sides of the second resist film 150. In the example shown in Figure 2(f), similar to the second fluidized film 161, the upper surface of the second metal-containing film 162 is located above the upper surface of the second resist film 150. 【0060】 Step S110 is performed after step S109. Step S110 includes removing the second resist film 150 and forming a fourth opening 162r in the second metal-containing film 162. Step S110 may also include removing the second metal-containing film 162 on the second resist film 150 to expose the second resist film 150. Hereinafter, this step will be referred to as the "step of exposing the second resist film 150". The step of exposing the second resist film 150 is performed, for example, using the second processing apparatus PM2 described later. 【0061】 Furthermore, step S110 may include removing the second resist film 150 after exposing it. Hereinafter, this step will be referred to as the "step of removing the second resist film 150". The step of removing the second resist film 150 may be performed, for example, using the third processing apparatus PM3 described later. 【0062】 In step S110, the step of exposing the second resist film 150 may be the same as in step S105a shown in Figure 3, except that the film to be removed is the second metal-containing film 162. Figure 2(g) is a schematic perspective view of the substrate 100 after the second metal-containing film 162 above the second resist film 150 has been removed. As shown in Figure 2(g), the upper surface of the second resist film 150 is exposed when the second metal-containing film 162 above the second resist film 150 is removed. 【0063】 In step S110, the step of removing the second resist film 150 may be the same as in step S105b shown in Figure 3, except that the film to be removed is the second resist film 150. Figure 2(h) is a schematic perspective view of the substrate 100 including the second metal-containing film 162 after the fourth opening 162r has been formed in the second metal-containing film 162. As shown in Figure 2(h), following the removal of the second resist film 150, a fourth opening pattern including the fourth opening 162r is formed in the second metal-containing film 162. The fourth opening pattern is an inverted opening pattern of the third opening pattern of the second resist film 150. In the example shown in Figure 2(h), the fourth opening 162r has a trench shape that is recessed from the upper surface of the second metal-containing film 162 toward the first metal-containing film 132 and the filler film 140. However, the shape of the fourth opening 162r is not limited to a trench shape. In the example shown in Figure 2(h), the fourth opening 162r has a trench shape extending in the second direction, similar to the third opening 150r. 【0064】 The substrate processing method according to the first embodiment may include a step S111 performed after step S110. Step S111 includes removing a portion of the underlayer film 110 that overlaps with the second opening 132r and the fourth opening 162r in a plan view. In other words, step S111 includes removing a portion of the underlayer film 110 using the first metal-containing film 132 having the second opening 132r and the second metal-containing film 162 having the fourth opening 162r as masks. Step S111 will be described in detail with reference to Figure 6. 【0065】 As shown in Figure 6, the fourth opening 162r and the second opening 132r are formed in different first and second directions in a plan view. Therefore, a portion of the fourth opening 162r overlaps with a portion of the second opening 132r in a plan view. That is, an opening 200r is formed in the substrate 100, composed of the overlapping second opening 132r and the fourth opening 162r. In the example shown in Figure 6, the opening 200r has, for example, a roughly rhombic shape in a plan view. However, the shape of the opening 200r in a plan view is not limited to a roughly rhombic shape. For clarity, the positions and dimensions of the first metal-containing film 132, the second metal-containing film 162, the second opening 132r, and the fourth opening 162r shown in Figure 6 differ from the positions and dimensions of the first metal-containing film 132, the second metal-containing film 162, the second opening 132r, and the fourth opening 162r shown in Figure 2(h). 【0066】 Step S111 includes a step of etching the packing film 140 to remove a portion of the packing film 140 that overlaps with the opening 200r. The step of removing a portion of the packing film 140 is performed, for example, using the third processing apparatus PM3 described later. An example of an etching gas used for etching the packing film 140 is a gas containing O. Gases containing O include, for example, O2 gas, CO2 gas, SO2 gas, or COS gas. However, the etching gas used for etching the packing film 140 can be appropriately selected according to the composition of the packing film 140 and the selectivity ratio with the underlayer film 110, the first metal-containing film 132, and the second metal-containing film 162. 【0067】 Step S111 includes a step of etching the underlayer film 110 to remove a portion of the underlayer film 110 that overlaps with the opening 200r. The step of removing a portion of the underlayer film 110 is performed using the third treatment apparatus PM3, which will be described later. 【0068】 By removing a portion of the base film 110, holes 210r are formed in the base film 110. The holes 210r formed in the base film 110 are smaller than the dimensions of the second opening 132r and the fourth opening 162r. Therefore, by performing step S111, a fine hole pattern including holes 210r can be formed in the base film 110. In the example shown in Figure 6, the holes 210r have a substantially circular shape in plan view. This is because the number of active species such as ions and radicals generated from the etching gas that have entered the corners of the opening 200r has been reduced. However, the shape of the holes 210r in plan view is not limited to substantially circular. 【0069】 Examples of etching gases used for etching the undercoat 110 include the following. When the undercoat 110 is, for example, a single-crystal silicon film, a polycrystalline silicon film, an amorphous silicon film, a silicon oxide film, or a silicon nitride film, a gas containing F can be used as the etching gas for etching the undercoat 110. Examples of gases containing F include CF4 gas, SF6 gas, NF3 gas, CH2F2 gas, CH3F gas, CHF3 gas, C4F6 gas, or C4F8 gas. The etching gas used to etch the undercoat 110 may be a single gas or a mixed gas. 【0070】 If the undercoat 110 is, for example, a hafnium oxide film or a zirconium oxide film, a gas containing Cl can be used as the etching gas for etching the undercoat 110. Examples of Cl-containing gases are Cl2 gas or BCl3 gas. 【0071】 If the undercoat 110 is, for example, an ITO film or an IGZO film, a gas containing H can be used as the etching gas for etching the undercoat 110. Examples of gases containing H include H2 gas and CH4 gas. If the undercoat 110 is, for example, a titanium film, a titanium nitride film, or a molybdenum film, a gas containing Cl can be used as the etching gas for etching the undercoat 110. Examples of gases containing Cl include Cl2 gas and BCl3 gas. If the undercoat 110 is, for example, a tungsten film, a gas containing F can be used as the etching gas for etching the undercoat 110. Examples of gases containing F include SF6 gas, NF3 gas, and CF4 gas. 【0072】 Step S111 may include removing a portion of the base film 110, followed by removing the first metal-containing film 132, the second metal-containing film 162, and the filling film 140. This allows the other films to be removed while leaving the base film 110 in which the holes 210r are formed. 【0073】 Incidentally, conventionally, multi-patterning processes such as the LELE (Lithography Etching) method have been used as a technique to form fine patterns that exceed the limit resolution of the exposure equipment. However, in conventional multi-patterning processes, a substrate containing multiple stacked layers is prepared, and a portion of the top layer of the substrate is removed to form the first aperture pattern. Therefore, if a situation occurs where the second and subsequent aperture patterns are formed off-center from the desired position, the process performed up to that point cannot be redone. Furthermore, since the alignment marks used for positioning the second and subsequent aperture patterns are, for example, located in the bottom layer of the substrate, the distance between the film used to form the second and subsequent aperture patterns and the alignment marks may increase. In this case, the accuracy of the alignment for the second and subsequent aperture patterns may decrease. 【0074】 In contrast, according to the first embodiment, a first metal-containing film 132 having a second opening pattern that is the inverse of the first opening pattern of the first resist film 120 can be formed on the base film 110. That is, unlike conventional multi-patterning processes, the opening pattern can be formed without removing a part of the base film 110. As a result, even if the third and fourth opening patterns formed after the second opening pattern are formed off-center from the desired position, the process performed up to that point can be redone by removing the first metal-containing film 132 on the base film 110. Furthermore, according to the first embodiment, alignment marks can be provided on the upper surface of the base film 110, which is the uppermost part, so that the alignment marks can be brought closer to the second resist film 150 and the second metal-containing film 162. This improves the accuracy of alignment with respect to the third opening pattern formed on the second resist film 150 and the fourth opening pattern formed on the second metal-containing film 162. 【0075】 <Second Embodiment> The substrate processing method according to the second embodiment will be described with reference to Figures 7 and 8. Figure 7 is a flowchart of the substrate processing method according to the second embodiment. Figure 8 is a schematic perspective view showing a substrate 100A for illustrating the substrate processing method according to the second embodiment. In the second embodiment, the same reference numerals are used for parts that are the same as in the first embodiment, and their descriptions are omitted as appropriate. 【0076】 The substrate processing method according to the second embodiment includes steps S201 to S210 shown in Figure 7. Steps S201 to S205 in the second embodiment may be the same as steps S101 to S105 in the first embodiment. Therefore, the explanation of steps S201 to S205 in the second embodiment will be omitted. 【0077】 Step S206 is similar to step S107 of the first embodiment in that it includes forming a second resist film 350 on a substrate 100A including the undercoat 110 and the first metal-containing film 132. On the other hand, in step S206 of the second embodiment, the second resist film 350 is formed on the undercoat 110 so as to fill the second opening 132r of the first metal-containing film 132. Step S206 is performed, for example, using a coating apparatus 410 described later. 【0078】 Figure 8(a) is a schematic perspective view of a substrate 100A including the second resist film 350. As shown in Figure 8(a), the second resist film 350 covers the upper surface of the undercoat film 110 and the upper and side surfaces of the first metal-containing film 132. However, the second resist film 350 may cover the upper surface of the undercoat film 110 and the side surfaces of the first metal-containing film 132 so as to expose the upper surface of the first metal-containing film 132. The configuration of the second resist film 350 may be the same as that of the first resist film 120. Furthermore, the method for forming the second resist film 350 may be the same as that for forming the first resist film 120. 【0079】 Step S207 is performed after step S206. Step S207 may be the same as step S108 in the first embodiment. Step S207 forms a third opening 350r in the second resist film 350. Step S207 is performed, for example, using the third processing apparatus PM3 described later. 【0080】 Figure 8(b) is a schematic perspective view showing the substrate 100A including the second resist film 350 after the third opening 350r has been formed. As shown in Figure 8(b), the second resist film 350 has a line portion 351 that covers at least the side surface of the first metal-containing film 132, and a line portion 352 located next to the line portion 351, separated by the third opening 350r. In the example shown in Figure 8(b), the third opening 350r has a trench shape that is recessed from the upper surface of the second resist film 350 toward the underlying film 110. However, the shape of the third opening 350r is not limited to a trench shape. 【0081】 After step S207, steps S208 and S209 are performed in order. Step S208 may be the same as step S109 in the first embodiment, except that the second metal-containing film 362 is located on the base film 110. That is, step S208 includes filling the third opening 350r with a second fluidized film containing metal M contained in the second metal-containing precursor. Hereinafter, this step will be referred to as the "step of filling the third opening 350r with the second fluidized film". Step S208 also includes forming the second metal-containing film 362 on the third opening 350r by curing the second fluidized film. Hereinafter, this step will be referred to as the "step of forming the second metal-containing film 362 on the third opening 350r". Step S208 is performed, for example, using the first processing apparatus PM1 described later. 【0082】 Step S209 may be the same as step S110 in the first embodiment, except that a fourth opening 362r is formed in the second metal-containing film 362 located on the underlayment film 110. That is, step S209 may include removing the second metal-containing film 362 on the second resist film 350 to expose the second resist film 350. Hereinafter, this step will be referred to as the "step of exposing the second resist film 350". The step of exposing the second resist film 350 is performed, for example, using the second processing apparatus PM2 described later. Step S209 may also include removing the second resist film 350 after performing the step of exposing the second resist film 350. Hereinafter, this step will be referred to as the "step of removing the second resist film 350". The step of removing the second resist film 350 is performed, for example, using the third processing apparatus PM3 described later. 【0083】 Figure 8(c) is a schematic perspective view showing the substrate 100A including the second metal-containing film 362 after the fourth opening 362r has been formed. As shown in Figure 8(c), the opening width of the fourth opening 362r formed in the second metal-containing film 362 is smaller than the opening width of the second opening 132r formed in the first metal-containing film 132. Therefore, by performing step S209, a fine fourth opening pattern including the fourth opening 362r can be formed in the second metal-containing film 362. In the example shown in Figure 8(c), the fourth opening 362r has a trench shape that is recessed from the upper surface of the second metal-containing film 362 toward the base film 110. However, the shape of the fourth opening 362r is not limited to a trench shape. 【0084】 The substrate processing method according to the second embodiment may include a step S210 performed after step S209. Step S210 includes removing a portion of the undercoat 110 that overlaps with the fourth opening 362r in a plan view. Step S210 is performed, for example, using a fourth processing apparatus PM4 described later. The etching gas for removing the undercoat 110 may be the same as the etching gas listed in step S111 in the first embodiment. 【0085】 Figure 8(d) is a schematic perspective view showing the substrate 100A including the undercoat 110 from which a portion has been removed. As shown in Figure 8(d), a fine aperture pattern corresponding to the fourth aperture pattern including the fourth aperture 362r is transferred to the undercoat 110. 【0086】 Step S210 may include removing a portion of the undercoat 110 and then removing the second metal-containing film 362. The etching gas for removing the second metal-containing film 362 can be appropriately selected depending on the composition of the second metal-containing film 362 and its selectivity ratio with the undercoat 110. 【0087】 Similar to the first embodiment, the second embodiment allows the formation of a first metal-containing film 132 on the base film 110, which has a second opening pattern that is the inverse of the first opening pattern of the first resist film 120. This allows the process to be redone by removing the first metal-containing film 132 on the base film 110, even if the third and fourth opening patterns formed after the second opening pattern are formed off-center from the desired position. Furthermore, according to the second embodiment, alignment marks can be provided on the upper surface of the base film 110, allowing the alignment marks to be brought closer to the second resist film 350 and the second metal-containing film 362. Moreover, in the second embodiment, the second resist film 350 and the second metal-containing film 362 can be formed on the base film 110. This further improves the accuracy of alignment with respect to the third opening pattern formed on the second resist film 350 and the accuracy of alignment with respect to the fourth opening pattern formed on the second metal-containing film 362. 【0088】 [Circuit board processing system] Referring to Figures 9 and 10, an example of a substrate processing system PS1 for implementing the substrate processing method according to the first and second embodiments will be described. Figure 9 is a block diagram showing an example of the configuration of the substrate processing system PS1. Figure 10 is a schematic diagram showing an example of the configuration of a processing system PS2 including the first processing unit PM1 to the fourth processing unit PM4 of the substrate processing system PS1. 【0089】 As shown in Figure 9, the substrate processing system PS1 comprises a coating device 410, an exposure device 420, a developing device 430, and first processing devices PM1 to fourth processing devices PM4. In the substrate processing system PS1, the coating device 410, the exposure device 420, and the developing device 430 may each be independent devices, or they may be integrated to form a system that can consistently perform coating, exposure, and developing processes. The first processing devices PM1 to fourth processing devices PM4 may, for example, form a cluster-type processing system PS2 connected via a vacuum transfer chamber VTM (see Figure 10). 【0090】 The coating apparatus 410 coats the first resist film 120 onto the undercoat film 110. The coating apparatus 410 also coats a filling film 140 to fill the second opening 132r of the first metal-containing film 132. The coating apparatus 410 also coats the second resist films 150 and 350 onto the substrates 100 and 100A. For example, steps S102, S106, and S107 shown in Figure 1, and steps S202 and S206 shown in Figure 7 are performed in the coating apparatus 410. 【0091】 The exposure apparatus 420 performs a first exposure treatment on the first resist film 120. The exposure apparatus 420 also performs a second exposure treatment on the second resist films 150 and 350. The developing apparatus 430 performs a first developing treatment on the first resist film 120. The developing apparatus 430 also performs a second developing treatment on the second resist films 150 and 350. In the exposure apparatus 420 and the developing apparatus 430, for example, steps S103 and S108 shown in Figure 1, and steps S203 and S207 shown in Figure 7 are performed. 【0092】 Referring to Figure 10, an example of a processing system PS2 including the first processing unit PM1 to the fourth processing unit PM4 will be described. As shown in Figure 10, the processing system PS2 comprises the first processing unit PM1, the second processing unit PM2, the third processing unit PM3, the fourth processing unit PM4, a vacuum transport chamber VTM, load lock chambers LL1 to LL3, an atmospheric transport chamber LM, load ports LP1 to LP3, and an overall control unit CU. In the example shown in Figure 10, the processing system PS2 is described as comprising four processing units related to the first processing unit PM1 to the fourth processing unit PM4, three load lock chambers LL1 to LL3, and three load ports LP1 to LP3, but the number of processing units, load lock chambers, and load ports is not limited to this. Furthermore, the processing system PS2 may have multiple vacuum transport chambers VTM and / or atmospheric transport chambers LM. 【0093】 The first to fourth processing units PM1 to PM4 are each connected to the vacuum transfer chamber VTM via gate valves G11 to G14. The first to fourth processing units PM1 to PM4 are configured to reduce the internal pressure to a predetermined level. The first to fourth processing units PM1 to PM4 house substrates 100 and 100A inside and perform the desired processing. 【0094】 The vacuum transport chamber VTM is configured to allow the internal pressure to be reduced to a predetermined level. The vacuum transport chamber VTM is equipped with a first transport device TR1 capable of transporting substrates 100 and 100A under reduced pressure. The first transport device TR1 transports substrates 100 and 100A from the first processing unit PM1 to the fourth processing unit PM4 and the load lock chambers LL1 to LL3. The first transport device TR1 has, for example, two transport arms FK11 and FK12 that can move independently. 【0095】 Load lock chambers LL1 to LL3 are connected to the vacuum transport chamber VTM via gate valves G21 to G23, respectively. Load lock chambers LL1 to LL3 are also connected to the atmospheric transport chamber LM via gate valves G31 to G33, respectively. Load lock chambers LL1 to LL3 are configured to allow switching between an atmospheric and a vacuum environment inside. 【0096】 The atmospheric transport chamber LM has an atmospheric environment inside. Inside the atmospheric transport chamber LM, for example, a downflow of clean air is formed. Inside the atmospheric transport chamber LM, an aligner AN is provided for aligning substrates 100 and 100A. The aligner AN may be provided outside the atmospheric transport chamber LM. The atmospheric transport chamber LM is provided with a second transport device TR2. The second transport device TR2 transports substrates 100 and 100A to the load lock chambers LL1 to LL3, load ports LP1 to LP3, and the aligner AN. 【0097】 Load ports LP1 to LP3 are provided on the long side walls of the atmospheric transport chamber LM. Carriers C are attached to load ports LP1 to LP3. Carrier C includes carriers C containing substrates 100 and 100A, and empty carriers C. Carrier C may be, for example, a FOUP (Front Opening Unified Pod). 【0098】 The central control unit (CU) may be, for example, a computer. The central control unit (CU) comprises a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), and auxiliary storage. The CPU operates based on programs stored in the ROM or auxiliary storage and controls each part of the processing system PS2. For example, the central control unit (CU) controls the operation of the first processing unit PM1 to the fourth processing unit PM4, the first transport device TR1, the second transport device TR2, and the gate valves G11-G14, G21-G23, and G31-G33. For example, the central control unit (CU) controls the operation of switching the inside of the load lock chambers LL1-LL3 between an atmospheric atmosphere and a vacuum atmosphere. 【0099】 Next, we will explain the operation of the PS2 processing system. 【0100】 First, the second transport device TR2 removes substrates 100 and 100A from carrier C, transports the removed substrates 100 and 100A to aligner AN, and exits aligner AN. Next, aligner AN aligns substrates 100 and 100A. Then, the second transport device TR2 removes substrates 100 and 100A from aligner AN, transports the removed substrates 100 and 100A to load lock chamber LL1, and exits load lock chamber LL1. Next, the atmosphere inside load lock chamber LL1 is switched from atmospheric to vacuum. After that, the first transport device TR1 removes substrates 100 and 100A from load lock chamber LL1 and loads the removed substrates 100 and 100A into first processing device PM1. Furthermore, when the first transport device TR1 loads substrates 100 and 100A into or out of the first processing device PM1, the pressure inside the vacuum transport chamber VTM is adjusted to exceed the pressure inside the first processing device PM1. For example, the flow rate of the inert gas flowing into the vacuum transport chamber VTM is adjusted so that the pressure inside the vacuum transport chamber VTM exceeds the pressure inside the first processing device PM1. The same procedure is followed when loading or unloading substrates 100 and 100A from the second processing device PM2 to the fourth processing device PM4. 【0101】 The first processing apparatus PM1 deposits a first metal-containing film 132 onto substrates 100 and 100A, for example. The first processing apparatus PM1 also deposits a second metal-containing film 162 and 362 onto substrates 100 and 100A, for example. The first processing apparatus PM1 is a film deposition apparatus that performs film deposition on substrates 100 and 100A by methods such as CVD (Chemical Vapor Deposition). In the first processing apparatus PM1, steps S104 and S109 shown in Figure 1, and steps S204 and S208 shown in Figure 7 are performed, for example. 【0102】 Next, the first transport device TR1 removes substrates 100 and 100A from the first processing device PM1 and transports the removed substrates 100 and 100A to the second processing device PM2. 【0103】 The second processing apparatus PM2 removes, for example, the first metal-containing film 132 above the first resist film 120 on substrates 100 and 100A. The second processing apparatus PM2 also removes, for example, the second metal-containing films 162 and 362 above the second resist films 150 and 350 on substrates 100 and 100A. The second processing apparatus PM2 is an etching apparatus. In the second processing apparatus PM2, for example, the steps S105a shown in Figure 3, the step S110 shown in Figure 1 in which the second resist film 150 is exposed, and the step S209 shown in Figure 7 in which the second resist film 350 is exposed are performed. 【0104】 Next, the first transport device TR1 removes substrates 100 and 100A from the second processing device PM2 and transports the removed substrates 100 and 100A to the third processing device PM3. 【0105】 The third processing apparatus PM3 removes, for example, the first resist film 120, the filler film 140, and the second resist films 150 and 350 on substrates 100 and 100A. The third processing apparatus PM3 is an etching apparatus. In the third processing apparatus PM3, for example, the steps of removing the second resist film 150 in step S105b shown in Figure 3, step S110 shown in Figure 1, step S111 showing the removal of the filler film 140, and step S209 showing the removal of the second resist film 350 are performed. 【0106】 Next, the first transport device TR1 removes substrates 100 and 100A from the third processing device PM3, transports the removed substrates 100 and 100A to the load lock chamber LL3, and exits from the load lock chamber LL3. Then, the atmosphere inside the load lock chamber LL3 is switched from a vacuum atmosphere to an atmospheric atmosphere. After that, the second transport device TR2 removes substrates 100 and 100A from the load lock chamber LL3 and places the removed substrates 100 and 100A into carrier C. 【0107】 The fourth processing apparatus PM4 removes a portion of the undercoat 110 on the substrates 100 and 100A. The fourth processing apparatus PM4 is an etching apparatus. In the fourth processing apparatus PM4, for example, step S111 shown in Figure 1 and step S210 shown in Figure 7 are performed. 【0108】 Figure 10 shows a first processing unit PM1 to a fourth processing unit PM4 connected via a vacuum transport chamber VTM of a single processing system PS2. However, at least one of the first processing unit PM1 to the fourth processing unit PM4 may be provided independently of the other processing units. For example, the first processing unit PM1 may be provided independently of the second processing unit PM2 to the fourth processing unit PM4. In this case, once the film deposition process by the first processing unit PM1 is completed, the substrates 100 and 100A may be transported outside the first processing unit PM1. The substrates 100 and 100A transported outside the first processing unit PM1 may then pass through the vacuum transport chamber VTM and the atmospheric transport chamber LM, and then be transferred to other processing units, for example, via a carrier C attached to the atmospheric transport chamber LM. 【0109】 [Substrate processing equipment] Next, the first processing apparatus PM1 (hereinafter referred to as the substrate processing apparatus PM1) will be described with reference to Figure 11. Figure 11 is a schematic diagram showing an example of a substrate processing apparatus PM1 that performs film deposition processing on substrates 100 and 100A. 【0110】 The substrate processing apparatus PM1 includes a processing container 10, a mounting table 20, a first gas supply unit 30, a first temperature adjustment unit 40, and a control unit 50. The substrate processing apparatus PM1 may further include a second gas supply unit 60, a second temperature adjustment unit 70, an exhaust unit 80, a pressure detection unit 91, a first temperature detection unit 92, and a second temperature detection unit 93. 【0111】 The following describes the case where the first metal-containing precursor, which is the raw material for the first metal-containing film 132, and the second metal-containing precursor, which is the raw material for the second metal-containing films 162,362, are the same compound. That is, the case in which the first gas supply unit 30 supplies a raw material gas containing the first metal-containing precursor and a raw material gas containing the second metal-containing precursor. When the first metal-containing precursor and the second metal-containing precursor are described without distinction, they are collectively referred to as "metal-containing precursors." If the first metal-containing precursor and the second metal-containing precursor are different compounds, the substrate processing apparatus PM1 may further include other gas supply units different from the first gas supply unit 30. In this case, the first gas supply unit 30 supplies a raw material gas containing one of the first metal-containing precursor and the second metal-containing precursor, and the other gas supply unit supplies a raw material gas containing the other of the first metal-containing precursor and the second metal-containing precursor. 【0112】 The processing container 10 is equipped with an outer wall 11 that partitions the internal processing chamber. The outer wall 11 has, for example, a side wall 111, a bottom wall 112, and a top wall 113. The side wall 111 of the processing container 10 is provided with an opening (not shown) for transporting the substrate 100. The opening is opened and closed by a gate valve G11. 【0113】 The mounting stage 20 is placed inside the processing container 10. The mounting stage 20 is configured to hold substrates 100 and 100A. When the first metal-containing film 132 is formed, the substrates 100 and 100A placed on the mounting stage 20 have a base film 110 and a first resist film 120 having a first opening pattern. When the second metal-containing film 162 is formed, the substrate 100 placed on the mounting stage 20 has a base film 110, a first metal-containing film 132, a filler film 140, and a second resist film 150 having a third opening pattern. When the second metal-containing film 362 is formed, the substrate 100A placed on the mounting stage 20 has a base film 110, a first metal-containing film 132, and a second resist film 350 having a third opening pattern. For example, ceramic materials such as silicon carbide and aluminum nitride can be used as the material for the mounting base 20. 【0114】 The first gas supply unit 30 is configured to supply a raw material gas containing a metal-containing precursor into the processing container 10. As shown in Figure 11, the first gas supply unit 30 includes a raw material gas supply source 31 containing a metal-containing precursor, a supply pipe 32 which is the flow path for the raw material gas, a flow controller 33 which controls the flow rate of the raw material gas, and a valve 34 which opens and closes the supply pipe 32. 【0115】 The first gas supply unit 30 may be configured to supply purge gas into the processing container 10. The first gas supply unit 30 may include a supply pipe 35 which is a flow path for the purge gas, a flow path switching valve 36 connected to the supply pipes 32 and 35, a supply pipe 37 located downstream of the flow path switching valve 36, and a valve 38 for opening and closing the supply pipe 37. The supply pipe 35 is connected to a purge gas supply source (not shown). The flow path switching valve 36 is configured to switch the fluid flowing through the supply pipe 37 from the raw material gas and the purge gas. The supply pipe 37 is connected to the processing container 10, for example, through a gas supply port 112a provided in the bottom wall 112 of the processing container 10. Note that the connection position between the supply pipe 37 and the processing container 10 (i.e., the connection position between the first gas supply unit 30 and the processing container 10) is not limited to the bottom wall 112. The connection position between the supply pipe 37 and the processing container 10 may be the side wall 111 or the top wall 113. 【0116】 In Figure 11, the raw material gas and the purge gas are supplied into the processing container 10 through the same gas supply unit (first gas supply unit 30). However, the raw material gas and the purge gas may be supplied into the processing container 10 through different gas supply units. 【0117】 The first temperature control unit 40 adjusts the temperature of the mounting table 20. By adjusting the temperature of the mounting table 20 by the first temperature control unit 40, the temperatures of the substrates 100 and 100A are adjusted. The first temperature control unit 40 may be, for example, a refrigerant flow path that circulates a low-temperature refrigerant supplied from a chiller to cool the mounting table 20. This allows the substrates 100 and 100A placed on the mounting table 20 to be cooled to a temperature lower than the boiling point of the metal-containing precursor. The first temperature control unit 40 adjusts the temperature of the mounting table 20 in accordance with a control signal from the control unit 50. 【0118】 The second gas supply unit 60 is configured to supply additive gas and oxidizing gas into the processing container 10. As shown in Figure 11, the second gas supply unit 60 has a supply pipe 61 which is a flow path for the additive gas and oxidizing gas, and a valve 62 which opens and closes the supply pipe 61. The second gas supply unit 60 may also have a flow rate controller (not shown) for controlling the flow rates of the additive gas and oxidizing gas. The supply pipe 61 is connected to a supply source for the additive gas (not shown) and a supply source for the oxidizing gas (not shown). The supply pipe 61 is connected to the processing container 10, for example, through a gas supply port 112b provided in the bottom wall 112 of the processing container 10. Note that the connection position between the supply pipe 61 and the processing container 10 (i.e., the connection position between the second gas supply unit 60 and the processing container 10) is not limited to the bottom wall 112. The connection position between the supply pipe 61 and the processing container 10 may be the side wall 111 or the top wall 113. 【0119】 In Figure 11, the additive gas and the oxidizing gas are supplied into the processing container 10 through the same gas supply unit (second gas supply unit 60). However, the additive gas and the oxidizing gas may be supplied into the processing container 10 through different gas supply units. 【0120】 The second temperature control unit 70 adjusts the temperature of the outer wall 11 of the processing container 10. The second temperature control unit 70 is, for example, a heater that heats the outer wall 11. This allows the outer wall 11 to be heated, which suppresses the adhesion of the first fluidized film 131 and the second fluidized film 161 to the outer wall 11 when raw material gas is supplied into the processing container 10. The second temperature control unit 70 adjusts the temperature of the outer wall 11 in accordance with the control signal from the control unit 50. 【0121】 The exhaust unit 80 includes a pressure regulating valve 81 and a vacuum pump 82. The exhaust unit 80 is connected to the processing container 10 through an exhaust port 113a provided in the top wall 113 of the processing container 10. The exhaust unit 80 adjusts the pressure inside the processing container 10 to a desired level in response to a control signal from the control unit 50. Note that the connection location between the exhaust unit 80 and the processing container 10 is not limited to the top wall 113. The connection location between the exhaust unit 80 and the processing container 10 may be the side wall 111 or the bottom wall 112. 【0122】 The pressure detection unit 91 is a sensor that detects the pressure inside the processing container 10. The pressure detection unit 91 is provided, for example, in the exhaust unit 80. The first temperature detection unit 92 is a sensor that detects the temperature of the mounting base 20. The first temperature detection unit 92 is provided, for example, in the mounting base 20. The second temperature detection unit 93 is a sensor that detects the temperature of the outer wall 11 of the processing container 10. The second temperature detection unit 93 is provided, for example, in the outer wall 11. When describing the pressure detection unit 91, the first temperature detection unit 92, and the second temperature detection unit 93 without distinction, they may be collectively referred to as "each detection unit". 【0123】 The control unit 50 is, for example, a computer and includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or auxiliary storage device and controls the operation of the substrate processing device PM1. The control unit 50 may be located inside or outside the substrate processing device PM1. If the control unit 50 is located outside the substrate processing device PM1, the control unit 50 can control the substrate processing device PM1 by communication means such as wired or wireless. 【0124】 The control unit 50 controls the first gas supply unit 30, the first temperature adjustment unit 40, the second gas supply unit 60, and the exhaust unit 80 to execute steps S104 and S109 shown in Figure 1, and steps S204 and S208 shown in Figure 7. The control unit 50 may also further control the second temperature adjustment unit 70 to execute steps S104 and S109 shown in Figure 1, and steps S204 and S208 shown in Figure 7. 【0125】 The control unit 50 is configured to control the first temperature adjustment unit 40 so that the temperature of the substrates 100 and 100A placed on the mounting table 20 is lower than the boiling point of the metal-containing precursor. This makes it possible to form conformal first fluidized film 131, first metal-containing film 132, second fluidized film 161, and second metal-containing films 162 and 362. 【0126】 When controlling the first temperature adjustment unit 40, the control unit 50 may acquire information from each detection unit and ROM regarding the pressure inside the processing container 10, the boiling point of the metal-containing precursor under the pressure inside the processing container 10, and the temperature of the mounting stage 20. The control unit 50 may also determine, based on the acquired information, whether the temperature of the substrates 100 and 100A is lower than the boiling point of the metal-containing precursor. In this case, the control unit 50 may consider the temperature of the mounting stage 20 to be the temperature of the substrates 100 and 100A. Alternatively, the control unit 50 may, for example, refer to information stored in the ROM that shows the correspondence between the temperature of the mounting stage 20 and the temperatures of the substrates 100 and 100A, and convert the temperature of the substrates 100 and 100A from the temperature of the mounting stage 20. 【0127】 The control unit 50 may be configured to control the second temperature adjustment unit 70 so that the temperature of the outer wall 11 of the processing container 10 is above the boiling point of the metal-containing precursor. This reduces the adhesion of the first fluidized film 131 and the second fluidized film 161 to the outer wall 11. 【0128】 When controlling the second temperature adjustment unit 70, the control unit 50 may acquire information from each detection unit and ROM regarding the pressure inside the processing container 10, the boiling point of the metal-containing precursor under the pressure inside the processing container 10, and the temperature of the outer wall 11. The control unit 50 may also determine, based on the acquired information, whether the temperature of the outer wall 11 is above the boiling point of the metal-containing precursor. 【0129】 The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols] 【0130】 100, 100A circuit board 110 Undercoat 120 First resist film 120r First opening 131 First fluidized membrane 132 First metal-containing film 132r 2nd opening 140 Filled membrane 150,350 Second resist film 150r,350r 3rd opening 161 Second fluid membrane 162,362 Second metal-containing film 162r,362r 4th opening

Claims

[Claim 1] (a) A step of forming a first resist film on a base film, (b) A step of subjecting the first resist film to a first exposure treatment and a first development treatment to form a first opening in the first resist film, (c) A step of supplying a raw material gas containing a first metal-containing precursor to fill the first opening with a first fluidized film containing the metal contained in the first metal-containing precursor at a temperature lower than the boiling point of the first metal-containing precursor, and then curing the first fluidized film to form a first metal-containing film on the first opening, (d) A step of removing the first resist film and forming a second opening in the first metal-containing film, (e) A step of forming a second resist film on a substrate including the undercoat and the first metal-containing film, (f) A step of subjecting the second resist film to a second exposure treatment and a second development treatment to form a third opening in the second resist film, (g) A step of supplying a raw material gas containing a second metal-containing precursor to fill the third opening with a second fluidized film containing the metal contained in the second metal-containing precursor at a temperature lower than the boiling point of the second metal-containing precursor, and then curing the second fluidized film to form a second metal-containing film on the third opening, (h) A step of removing the second resist film and forming a fourth opening in the second metal-containing film, A substrate processing method having the following characteristics. [Claim 2] A step between step (d) and step (e) further comprising the step of forming a filling film that fills the second opening, The step (e) includes forming the second resist film on the first metal-containing film and the filling film, The step (h) includes removing the second resist film to form the fourth opening in the second metal-containing film located on the first metal-containing film and the filling film, The substrate processing method according to claim 1. [Claim 3] A portion of the fourth opening overlaps with a portion of the second opening in a plan view. The substrate processing method according to claim 2. [Claim 4] The method further includes the step of removing a portion of the underlayer film that overlaps with the second and fourth openings in a plan view. The substrate processing method according to claim 3. [Claim 5] Step (e) includes forming the second resist film on the underlayment film so as to fill the second opening, The step (h) includes removing the second resist film to form the fourth opening in the second metal-containing film located on the underlying film, The substrate processing method according to claim 1. [Claim 6] The method further includes the step of removing a portion of the underlayer film that overlaps with the fourth opening in a plan view. The substrate processing method according to claim 5. [Claim 7] Step (d) includes removing the first metal-containing film on the first resist film to expose the first resist film, and removing the first resist film. A substrate processing method according to any one of claims 1 to 6. [Claim 8] The step (h) includes removing the second metal-containing film on the second resist film to expose the second resist film, and removing the second resist film. A substrate processing method according to any one of claims 1 to 6. [Claim 9] At least one of the first metal-containing precursor and the second metal-containing precursor is an amino metal compound. A substrate processing method according to any one of claims 1 to 6. [Claim 10] The amino metal compound comprises at least one metal from silicon, germanium, hafnium, tin, titanium, zirconium, tungsten, and aluminum. The substrate processing method according to claim 9.

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