Semiconductor equipment

Abstract

The present invention provides a logic circuit utilizing a resistive element and a thin-film transistor fabricated using an oxide semiconductor layer with controlled electrical properties, as well as a semiconductor device utilizing the logic circuit. [Solution] In the semiconductor device, a silicon nitride layer 910 formed by a plasma CVD method using a gas containing hydrogen compounds such as silane (SiH4) and ammonia (NH3) is provided in direct contact with an oxide semiconductor layer 905 applied to a resistive element 354, and the silicon nitride layer 910 is provided on the oxide semiconductor layer 906 applied to the thin-film transistor 355 via a silicon oxide layer 909 that functions as a barrier layer. As a result, hydrogen is introduced into the oxide semiconductor layer 905 at a higher concentration than in the oxide semiconductor layer 906. Consequently, the resistance value of the oxide semiconductor layer 905 applied to the resistive element 354 becomes lower than the resistance value of the oxide semiconductor layer 906 applied to the thin-film transistor 355.

Claims

1. A pixel section having multiple pixels, The pixel section has a protection circuit connected via a source line, The protection circuit is supplied with a high power supply potential. The protection circuit has a resistive element, The resistive element has a first oxide semiconductor layer, In a top view, the first oxide semiconductor layer has a curved shape. At least one of the plurality of pixels has a first transistor, a second transistor, and a light-emitting element. The first transistor has a second oxide semiconductor layer, The second transistor has a third oxide semiconductor layer, Either the source or the drain of the first transistor is connected to the source line. The source or drain of the first transistor, the other of which is connected to the gate of the second transistor, Either the source or the drain of the second transistor is connected to the first electrode of the light-emitting element. The high power supply potential is supplied to the other of the source or drain of the second transistor. Each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises In, Ga, and Zn. Semiconductor equipment.

2. A pixel section having multiple pixels, The pixel section has a protection circuit connected via a source line, The protection circuit is supplied with a high power supply potential. The protection circuit has a resistive element, The resistive element has a first oxide semiconductor layer, The first oxide semiconductor layer has a meander shape, At least one of the plurality of pixels has a first transistor, a second transistor, and a light-emitting element. The first transistor has a second oxide semiconductor layer, The second transistor has a third oxide semiconductor layer, Either the source or the drain of the first transistor is connected to the source line. The source or drain of the first transistor, the other of which is connected to the gate of the second transistor, Either the source or the drain of the second transistor is connected to the first electrode of the light-emitting element. The high power supply potential is supplied to the other of the source or drain of the second transistor. Each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises In, Ga, and Zn. Semiconductor equipment.

3. A pixel section having multiple pixels, The pixel section has a protection circuit connected via a source line, The protection circuit is supplied with a high power supply potential. The protection circuit has a resistive element, The resistive element has a first oxide semiconductor layer, In a top view, the first oxide semiconductor layer has a meandering shape. At least one of the plurality of pixels has a first transistor, a second transistor, and a light-emitting element. The first transistor has a second oxide semiconductor layer, The second transistor has a third oxide semiconductor layer, Either the source or the drain of the first transistor is connected to the source line. The source or drain of the first transistor, the other of which is connected to the gate of the second transistor, Either the source or the drain of the second transistor is connected to the first electrode of the light-emitting element. The high power supply potential is supplied to the other of the source or drain of the second transistor. Each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises In, Ga, and Zn. Semiconductor equipment.

4. In any one of claims 1 to 3, The protection circuit is provided between the source line drive circuit and the pixel section. Semiconductor equipment.

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