Electronic components

Abstract

Suppress the diffusion into the matrix of the metal contained in the conductor portion. 【Solution means】The inductor component 1 includes a matrix 10 in which a plurality of insulating layers are laminated, and two or more conductor portions 30 and 40 disposed on or in the matrix. The insulating layer includes a glass portion and an inorganic filler, and at least one of the glass portion and the inorganic filler includes SiO2, X2O3, and R2O, where X is at least one of Al and B, and R is an alkali metal atom. The mass M of SiO2 SiO2 , the mass M of X2O3 X2O3 and the mass M of R2O R2O are in the relationship of M X2O3 / (M SiO2 + M X2O3 ) ≤ 0.20 and M R2O / (M SiO2 + M X2O3 ) ≥ 0.008.

Description

Technical Field

[0001] The present invention relates to electronic components.

Background Art

[0002] Conventionally, inductive components containing glass-based insulating materials have been studied. However, when a glass-based insulating material is included, the strength of the inductive component decreases, and cracks may occur in the body of the inductive component due to the impact during mounting and / or the stress during substrate deflection. In response to the above problems, for example, in Japanese Patent Application Laid-Open No. 2018-131353 (Patent Document 1), a crystalline filler was added to the glass-based insulating material.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, only considering the study of adding the conventional crystalline filler, when performing a structural design to obtain good electrical characteristics and / or when sintering the electrode at a high temperature, metal atoms (for example, Ag) may diffuse from the electrode to the body in the co-sintering of the electrode and the body. Due to this diffusion, the insulation resistance of the body may decrease, and migration may occur.

[0005] The present invention has found that by using a body having a specific configuration, diffusion of the metal contained in the electrode into the body can be suppressed. Thereby, in the present invention, the reliability of the electronic component can be improved.

Means for Solving the Problems

[0006] To solve the above problems, an electronic component according to one aspect of the present disclosure is a body in which a plurality of insulating layers are laminated, two or more conductor portions disposed on or in the body, and the insulating layer includes a glass portion and an inorganic filler, at least one of the glass portion and the inorganic filler contains SiO2, X2O3, and R2O, X is at least one of Al and B, R is an alkali metal atom, The mass M of SiO2 SiO2 , the mass M of X2O3 X2O3 , and the mass M of R2O R2O are such that M X2O3 / (M SiO2 +M X2O3 )≤0.20, and M R2O / (M SiO2 +M X2O3 )≥0.008.

[0007] According to the above embodiment, when at least one of the glass portion and the inorganic filler has the above configuration, diffusion of metal atoms contained in the electrode into the body can be suppressed. As a result, a decrease in the insulation resistance of the body can be suppressed, and the occurrence of migration can be suppressed. For example, even when fired at a high temperature, the electrode and the body can have good co-sintering properties. Thereby, the reliability of the electronic component can be improved. Note that the mass M of SiO2 SiO2 means the mass of SiO2 contained in the glass portion and the inorganic filler. The mass M of X2O3 X2O3 means the mass of X2O3 contained in the glass portion and the inorganic filler. The mass M of R2O R2O means the mass of R2O contained in the glass portion and the inorganic filler.

[0008] In one aspect, the glass portion contains SiO2, X2O3, and R2O.

[0009] In one embodiment, the inorganic filler comprises SiO2, X2O3, and R2O.

[0010] Furthermore, an electronic component that is another aspect of this disclosure is: A base body with multiple insulating layers stacked on top of each other, Two or more conductive parts arranged on or within the aforementioned body, Equipped with, The Young's modulus X at a point 10 μm inward from the surface where the conductor portion and the element are in contact with the element, and the Young's modulus Y at a point 30 μm inward from the element, are related by (YX) / Y × 100 ≤ 15.

[0011] According to the above embodiment, the Young's modulus at a position of 10 μm near the conductor and the Young's modulus at a position of 30 μm away from the conductor have a constant relationship, resulting in good co-sinterability between the conductor (e.g., Ag) and the substrate, and furthermore, the diffusion of metal atoms from the conductor to the substrate can be significantly suppressed. This makes it possible to improve the reliability of electronic components. [Effects of the Invention]

[0012] According to the present invention, by using a substrate having specific physical properties, the diffusion of metal contained in the conductive part into the substrate can be suppressed, thereby improving the reliability of the electronic component. [Brief explanation of the drawing]

[0013] [Figure 1] This is a perspective view showing a first embodiment of the inductor component of the present invention. [Figure 2] This is a disassembled perspective view of an inductor component. [Modes for carrying out the invention]

[0014] The following describes inductor components, an example of an electronic component, in detail with reference to the illustrated embodiment. Note that some of the drawings are schematic and may not reflect actual dimensions and proportions. Furthermore, even with electronic components other than inductors, if a similar material is used, the diffusion of metal contained in the conductor into the material can be suppressed, thereby improving the reliability of the electronic component. Examples of such electronic components include capacitors and chip resistors.

[0015] [First Embodiment] Figure 1 is a perspective view showing a first embodiment of the inductor component. Figure 2 is an exploded perspective view of the inductor component. As shown in Figures 1 and 2, the inductor component 1 includes a base body 10, a spiral coil 20 provided inside the base body 10 and formed by stacking multiple coil wirings 21, first lead wirings 27 and second lead wirings 28 provided inside the base body 10 and connected to one end of the coil 20, a first external conductor portion 30 connected to the first lead wiring 27, and a second external conductor portion 40 connected to the second lead wiring 28. The coil 20, the first and second lead wirings 27 and 28, and the first and second external conductor portions 30 and 40 are electrically connected. Note that in Figures 1 and 2, the base body 10 is depicted transparently to facilitate understanding of its structure.

[0016] The inductor component 1 is electrically connected to the wiring of a circuit board (not shown) via the first and second external conductor portions 30 and 40. The inductor component 1 is used, for example, as an impedance matching coil in high-frequency circuits and is used in electronic devices such as personal computers, DVD players, digital cameras, TVs, mobile phones, car electronics, and medical and industrial machinery. However, the applications of the inductor component 1 are not limited to these, and it can also be used in tuning circuits, filter circuits, rectifier and smoothing circuits, for example.

[0017] The base body 10 is formed in a roughly rectangular parallelepiped shape. The surface of the base body 10 has a first end face 15, a second end face 16 opposite the first end face 15, a first side surface 13 connected between the first end face 15 and the second end face 16, a second side surface 14 opposite the first side surface 13, a bottom surface 17 connected between the first end face 15 and the second end face 16, and a top surface 18 opposite the bottom surface 17. As shown in the figure, the X direction is perpendicular to the first end face 15 and the second end face 16, the Y direction is parallel to the first and second end faces 15, 16 and the bottom surface 17, and perpendicular to the first side surface 13 and the second side surface 14, and the Z direction is perpendicular to the X and Y directions, and perpendicular to the bottom surface 17 and the top surface 18. The element 10 has, for example, a length of 400 μm in the X direction, a length of 200 μm in the Y direction, and a length of 200 μm in the Z direction.

[0018] The base body 10 is constructed by laminating multiple insulating layers 11. The lamination direction of the insulating layers 11 is perpendicular (Y direction) to the first and second end faces 15, 16 and the bottom face 17 of the base body 10. That is, the insulating layers 11 are layered and spread in the XZ plane. In this application, "perpendicular" is not limited to a strictly perpendicular relationship, but also includes a substantially perpendicular relationship, taking into account the range of realistic variations. Note that in the base body 10, the interfaces between the multiple insulating layers 11 may not be clearly defined due to firing or other processes. The insulating layers 11 have the same thickness d.

[0019] The first external conductor portion (e.g., the first electrode) 30 is L-shaped, formed from the first end face 15 to the bottom face 17. The second external conductor portion (e.g., the second electrode) 40 is L-shaped, formed from the second end face 16 to the bottom face 17. The first external conductor portion 30 and the second external conductor portion 40 may have other forms. For example, they may be conductor portions covering five sides (e.g., five-sided electrodes), or conductor portions covering the bottom surface (e.g., bottom electrode).

[0020] The first external conductor portion 30 and the second external conductor portion 40 are composed of a conductive material such as Ag or Cu, and glass particles. The first external conductor portion 30 has a structure in which a plurality of first external conductor portion conductor layers 33 embedded in the base body 10 (insulating layer 11) are laminated. The second external conductor portion 40 has a structure in which a plurality of second external conductor portion conductor layers 43 embedded in the base body 10 (insulating layer 11) are laminated. The first external conductor portion conductor layer 33 extends along the first end face 15 and the bottom face 17, and the second external conductor portion conductor layer 43 extends along the second end face 16 and the bottom face 17.

[0021] The first lead wire 27 connects one first end of the coil 20 to the first outer conductor portion 30. The second lead wire 28 connects the other second end of the coil 20 to the second outer conductor portion 40. The first and second lead wires 27 and 28 are made of the same conductive material and glass particles as the coil 20.

[0022] In this embodiment, the coil 20, the first and second lead wirings 27 and 28, and the first and second external conductor parts 30 and 40 are integrated, and there is no clear boundary between them. However, this is not limited to this, and a boundary may exist if the coil, lead wiring, and external conductor parts are formed from different materials or using different manufacturing methods.

[0023] The coil 20 is composed of, for example, the same conductive material and glass particles as the first and second outer conductor portions 30 and 40. The coil 20 is wound in a spiral shape along the lamination direction of the insulating layer 11.

[0024] The coil 20 is formed in a roughly oval shape when viewed from the axial direction, but is not limited to this shape. The shape of the coil 20 may be, for example, circular, elliptical, rectangular, or other polygonal. "The axial direction of the coil 20" refers to the direction parallel to the central axis of the helix around which the coil 20 is wound. The axial direction of the coil 20 and the stacking direction of the insulating layer 11 refer to the same direction.

[0025] The coil 20 includes coil wiring 21 wound along a plane. Multiple coil wirings 21 are stacked along the axial direction. Specifically, the coil wiring 21 has a fifth coil wiring 21e, a fourth coil wiring 21d, a third coil wiring 21c, a second coil wiring 21b, and a first coil wiring 21a, which are stacked along the axial direction from the second side surface 14 to the first side surface 13. These coil wirings 21 are formed by winding them on the main surface (XZ plane) of the insulating layer 11 perpendicular to the axial direction. Adjacent coil wirings 21 in the stacking direction are electrically connected in series via via wiring 26 that penetrate the insulating layer 11 in the thickness direction (Y direction). In this way, multiple coil wirings 21 form a helix while being electrically connected in series with each other. Specifically, the coil 20 has a configuration in which multiple coil wirings 21, each with fewer than one turn, are stacked and electrically connected in series with each other, and the coil 20 has a helical shape. The coil wiring 21 consists of one coil conductor layer 25.

[0026] The distance between adjacent coil wirings 21 (for example, the distance between the first coil wiring 21a and the second coil wiring 21b, the distance between the second coil wiring 21b and the third coil wiring 21c, the distance between the third coil wiring 21c and the fourth coil wiring 21d, and the distance between the fourth coil wiring 21d and the fifth coil wiring 21e) is not particularly limited, but is, for example, 0.1 to 20 μm.

[0027] The shortest distance between the coil wiring 21 and the outer surface of the base body 10 in a cross section along the coil wiring 21 and perpendicular to the direction in which the coil wiring 21 is stacked is preferably 20 μm or less. The lower limit of the shortest distance between the coil wiring 21 and the outer surface of the base body 10 is not particularly limited, but is, for example, 1 μm. Here, "shortest distance" refers to the shortest distance between the coil wiring 21 and the outer surface of the base body 10 that is closest to it when viewed from the first side surface 13, for example, the top surface 18, the bottom surface 17, the first end surface 15, or the second end surface 16. By having the above configuration, it is possible to reduce the side gap while obtaining high Q characteristics, and to supply highly reliable electronic components.

[0028] In one embodiment, the shortest distance between the coil wiring 21 and the first end face 15 of the base body 10 in a cross section along the coil wiring 21 and perpendicular to the direction in which the coil wiring 21 is stacked is 20 μm or less. The lower limit of the shortest distance between the coil wiring 21 and the first end face 15 is not particularly limited, but for example, it is 1 μm. Here, "shortest distance" means the shortest distance between the coil wiring 21 and the first end face 15 as viewed from the first side surface 13.

[0029] Similarly, in one embodiment, the shortest distance between the coil wiring 21 and the second end face 16 of the base body 10 in a cross section along the coil wiring 21 and perpendicular to the direction in which the coil wiring 21 is stacked is 20 μm or less. The lower limit of the shortest distance between the coil wiring 21 and the second end face 16 is not particularly limited, but for example, it is 1 μm. Here, "shortest distance" means the shortest distance between the coil wiring 21 and the second end face 16 as viewed from the first side surface 13.

[0030] In one embodiment, the shortest distance between the coil wiring 21 and the top surface 18 of the base body 10 in a cross section along the coil wiring 21 and perpendicular to the direction in which the coil wiring 21 is stacked is 20 μm or less. The lower limit of the shortest distance between the coil wiring 21 and the top surface 18 is not particularly limited, but for example, it is 1 μm. Here, "shortest distance" refers to the shortest distance between the coil wiring 21 and the top surface 18 as viewed from the first side surface 13.

[0031] In one embodiment, the shortest distance between the coil wiring 21 and the bottom surface 17 of the base body 10 in a cross section along the coil wiring 21 and perpendicular to the direction in which the coil wiring 21 is stacked is 20 μm or less. The lower limit of the shortest distance between the coil wiring 21 and the bottom surface 17 is not particularly limited, but for example, it is 1 μm. Here, "shortest distance" refers to the shortest distance between the coil wiring 21 and the bottom surface 17 as viewed from the first side surface 13.

[0032] (Base model 10) The insulating layer 11 contained in the base body 10 includes a glass portion and an inorganic filler.

[0033] • Glass part The glass portion is an insulating solid. The glass portion contains SiO2, X2O3, and R2O. Here, X is at least one of Al and B, and R is an alkali metal atom, preferably at least one selected from the group consisting of Li, Na, K, Rb, Cs, and Fr, and more preferably at least one selected from the group consisting of Li, Na, and K, for example, K. Note that the resulting X2O3 has similar physical properties as X contains at least one of Al and B.

[0034] The glass portion may further contain atoms other than those mentioned above. For example, the glass portion may contain borosilicate glass mainly composed of B, Si, O, and K. In addition to borosilicate glass, the glass portion may also contain other types of glass, such as SiO2, B2O3, K2O, Li2O, CaO, ZnO, Bi2O3, and / or Al2O3, for example, SiO2-B2O3-K2O glass, SiO2-B2O3-Li2O-CaO glass, SiO2-B2O3-Li2O-CaO-ZnO glass, or Bi2O3-B2O3-SiO2-Al2O3 glass. The glass portion may also be a combination of two or more of these glass components.

[0035] • Inorganic filler The average particle size D50 of the inorganic filler is preferably in the range of 0.1 to 5 μm, and more preferably in the range of 0.1 to 3.0 μm. Having the above-mentioned average particle size allows for uniform mixing. Furthermore, it prevents the inclusion of larger particle sizes. The average particle size D50 can be measured using a general measurement method that utilizes images obtained with a scanning electron microscope (SEM). The average particle size D50 of the inorganic filler can be obtained by measuring the inorganic filler before adding it to the substrate 10.

[0036] The inorganic filler preferably includes at least one of Mg2SiO4 (forsterite), CaSiO3 (wollastonite), ZrO2 (zirconia), Al2O3 (alumina), CeO (ceria), TiO2 (titania), Fe2O3 (ferrite), SiO2 (quartz), and perovskite-type oxides. By including the above inorganic filler, the mechanical strength of the base material 10 can be improved while obtaining the desired electrical properties as an insulating layer.

[0037] Examples of perovskite oxides include compounds containing A1A2O3, where A1 and A2 are different cations. Examples of perovskite oxides include BaTiO3, (Ba,Sr)TiO3, PbTiO3, Pb(Zr,Ti)O3, (Pb,La)(Zr,Ti)O3, LiNbO3, (LiNbO3 / Ti), K(Ta,Nb)O3, and Pb(Mg 1 / 3 Nb 2 / 3 )O3 can be mentioned, and specifically BaTiO3 can be mentioned.

[0038] • Glass portion and inorganic filler In the glass portion and the inorganic filler, the mass M of SiO2 SiO2 The mass M of X2O3 X2O3 , and the mass M of R2O R2O teeth, M X2O3 / (M SiO2 +M X2O3 ) ≤ 0.20, and M R2O / (M SiO2 +M X2O3 The relationship is ≥ 0.008. By having a glass portion with the above composition, the diffusion of metal atoms contained in the conductive portion into the substrate can be suppressed, and as a result, the occurrence of migration can be suppressed. For example, even when fired at high temperatures, the conductive portion and the substrate can have good co-sintering properties. Furthermore, since the diffusion of metal atoms is suppressed, the decrease in the strength of the substrate can be suppressed. This makes it possible to improve the reliability of electronic components. Note that the mass M of SiO2 SiO2 The mass M of X2O3X2O3 , and the mass M of R2O R2O This is determined from the value obtained by cutting the inductor component 1 with a plane that includes the axis and is perpendicular to the top surface 18, and measuring the element 10 using wavelength-dispersive X-ray fluorescence (WDX) analysis. The plane that includes the axis and is perpendicular to the top surface 18 means the axis itself or the vicinity of the axis. The vicinity means, for example, that it may be 20% or less away from the axis of the element 10 with respect to the dimension of the element 10 in the X-axis direction.

[0039] In one embodiment, M X2O3 / (M SiO2 +M X2O3 ) ≤ 0.10.

[0040] In one embodiment, M R2O / (M SiO2 +M X2O3 ) ≥ 0.05.

[0041] In one embodiment, M X2O3 / (M SiO2 +M X2O3 ) ≤ 0.10, and M R2O / (M SiO2 +M X2O3 ) ≥ 0.05.

[0042] The ratio of glass to inorganic filler is not particularly limited, but for example, it is in the range of 0.4:0.6 to 0.8:0.2 in terms of volume. The above configuration allows for good mixing of the glass portion and the inorganic filler.

[0043] (Young's modulus) The inductor component 1 has two or more conductive parts. These conductive parts are arranged on or inside the base body 10. The Young's modulus X at a point 10 μm inward from the surface where one of the conductive parts contacts the base body 10, and the Young's modulus Y at a point 30 μm inward from the base body 10, can satisfy the relationship (YX) / Y × 100 ≤ 15. The above configuration makes it possible to suppress migration without increasing the distance between two or more conductor parts, and to miniaturize the inductor component 1. Note that two or more conductor parts consist of one conductor part and another conductor part adjacent to that conductor part, and the "inside of the base body 10" refers to the base body 10 (insulating layer 11) that exists in the direction from the one conductor part to the other conductor part. The Young's modulus can be measured using a substrate 10 fired at, for example, 900°C or 940°C. In one embodiment, the Young's modulus is measured using a substrate 10 fired at 900°C. In another embodiment, the Young's modulus is measured using a substrate 10 fired at 940°C. X and Y are values ​​measured using the same substrate. There may be some variation in the firing temperature; for example, firing may be performed within a range of ±5°C from the set temperature.

[0044] In one embodiment, the two or more conductor portions are a first outer conductor portion 30 and a second outer conductor portion 40 arranged on the base body 10. If the Young's modulus at a point 10 μm from the first outer conductor portion 30 toward the second outer conductor portion 40 is X, and the Young's modulus at a point 30 μm toward the second outer conductor portion 40 is Y, then preferably the relationship is (YX) / Y × 100 ≤ 15, and more preferably (YX) / Y × 100 ≤ 10. By having the above configuration, it is possible to suppress the decrease in insulation resistance due to the diffusion of metal atoms contained in the first outer conductor portion 30 and the second outer conductor portion 40, thereby suppressing the occurrence of migration. This makes it possible to increase the reliability of the inductor component 1.

[0045] In one embodiment, the two or more conductor parts are a plurality of coil wirings 21 arranged in the base body 10. If the Young's modulus at a distance of 10 μm from one coil wiring 21 to another adjacent coil wiring 21 is X, and the Young's modulus at a distance of 30 μm is Y, then preferably the relationship is (YX) / Y × 100 ≤ 15, and more preferably (YX) / Y × 100 ≤ 10. The above configuration suppresses the decrease in insulation resistance due to the diffusion of metal atoms contained in the coil wiring 21, thereby suppressing migration. This increases the reliability of the inductor component 1. In addition, the surface of the coil wiring 21 on the side that discharges current can be made smoother than the surface of conventional coil wiring. The two coil wirings 21 mentioned above may be, for example, the first coil wiring 21a and the second coil wiring 21b, the second coil wiring 21b and the third coil wiring 21c, the third coil wiring 21c and the fourth coil wiring 21d, or the fourth coil wiring 21d and the fifth coil wiring 21e.

[0046] (Diffusion distance of metal atoms) The diffusion distance of the metal atoms is, for example, 20 μm or less in the axial direction from the first coil wiring 21a, second coil wiring 21b, third coil wiring 21c, fourth coil wiring 21d, or fifth coil wiring 21e when sintered at 900°C, and specifically, 18 μm or less. The lower limit of the diffusion distance of the metal atoms is not particularly limited, but it could be, for example, 1 μm. By having the above configuration, the diffusion of metal atoms can be suppressed more than usual, the decrease in insulation resistance can be suppressed, and the occurrence of migration can be suppressed. Furthermore, some variation in firing temperature is acceptable; for example, firing may be performed within a range of ±5°C from the set temperature.

[0047] The diffusion distance of the metal atoms is, for example, 20 μm or less in the axial direction from the first coil wiring 21a, second coil wiring 21b, third coil wiring 21c, fourth coil wiring 21d, or fifth coil wiring 21e when sintered at 940°C, and specifically, 19 μm or less. The lower limit of the diffusion distance of the metal atoms is not particularly limited, but could be, for example, 1 μm. The above configuration allows for suppression of metal atom diffusion compared to normal, thereby preventing a decrease in insulation resistance and suppressing migration. The firing temperature may have some variation; for example, firing may be performed within a range of ±5°C of the set temperature.

[0048] (Manufacturing method) An embodiment of a manufacturing method for the inductor component 1 will be described.

[0049] First, prepare the insulating paste and the conductive paste. The insulating paste contains a filler material made of quartz (an example of a crystal), a glass material made of amorphous glass (an example of a base material), and a resin material as a solvent containing these.

[0050] An insulating paste is applied to a substrate such as a carrier film to form an outer insulating layer. An insulating paste is applied to the side of the outer insulating layer opposite to the substrate to form a first insulating layer. The insulating paste is applied, for example, by screen printing. The outer insulating layer may also be made by laminating pre-printed green sheets.

[0051] The first coil conductor layer is formed on the first insulating layer using a conductive paste. The coil pattern is formed, for example, by pattern printing, or by photolithography if the conductive paste has photolithographic properties.

[0052] An insulating paste is applied from above the first coil conductor layer and allowed to dry, forming a second insulating layer that covers the first coil conductor layer. Subsequently, via holes are formed at predetermined locations in the second insulating layer formed on the first coil conductor layer. The via holes are formed, for example, by laser processing, pattern printing, or, if the insulating paste has photolithographic properties, by photolithography.

[0053] A laminate is formed by repeatedly performing the steps of forming a coil conductor layer, an insulating layer, and via holes. Then, for example, firing is performed at 800-950°C to manufacture the inductor component 1.

[0054] Although the above manufacturing method describes a method using insulating paste, the inductor component 1 may also be manufactured using a general screen printing lamination method or a sheet lamination method. Furthermore, although the above manufacturing method describes forming the second insulating layer after forming the coil conductor layer, the coil conductor layer may be provided after forming the second insulating layer in advance.

[0055] [Second Embodiment] The configuration of the inductor component in the second embodiment is the same as that of inductor component 1 in the first embodiment, as shown in Figures 1 and 2. Except for the configuration described below, the configuration is the same as that of the first embodiment, and therefore its description is omitted.

[0056] In the first embodiment, the base body 10 is constructed by laminating a plurality of insulating layers 11, and the insulating layers 11 include a glass portion and an inorganic filler, with the glass portion having a specific configuration. In the second embodiment, the base body 10 is provided with two or more conductive portions, and the Young's modulus between the two or more conductive portions has a specific ratio. Specifically, the base body 10 is constructed by laminating a plurality of insulating layers 11, and the base body 10 is provided with two or more conductive portions. The Young's modulus X at a point 10 μm inward from the surface where the conductive portion and the base body 10 are in contact with each other, and the Young's modulus Y at a point 30 μm inward from the surface is given by (YX) / Y × 100 ≤ 15. The above configuration improves the co-sintering properties between the conductor (e.g., Ag) and the base material, and furthermore, the diffusion of metal atoms from the conductor to the base material can be significantly suppressed. This can increase the reliability of the inductor component 1.

[0057] In one embodiment, the two or more conductor portions are a first outer conductor portion 30 and a second outer conductor portion 40. If the Young's modulus at a point 10 μm from the first outer conductor portion 30 toward the second outer conductor portion 40 is X, and the Young's modulus at a point 30 μm toward the second outer conductor portion 40 is Y, then preferably the relationship is (YX) / Y × 100 ≤ 15, and more preferably (YX) / Y × 100 ≤ 10. By having the above configuration, it is possible to suppress the decrease in insulation resistance due to the diffusion of metal atoms contained in the first outer conductor portion 30 and the second outer conductor portion 40, thereby suppressing the occurrence of migration. This makes it possible to increase the reliability of the inductor component 1.

[0058] In one embodiment, the two or more conductor sections are two adjacent coil wirings 21. If the Young's modulus at a distance of 10 μm from one coil wiring 21 to the other adjacent coil wiring 21 is X, and the Young's modulus at a distance of 30 μm is Y, then preferably the relationship is (YX) / Y × 100 ≤ 15, and more preferably (YX) / Y × 100 ≤ 10. The above configuration suppresses the decrease in insulation resistance due to the diffusion of metal atoms contained in the coil wiring 21, thereby suppressing migration. This increases the reliability of the inductor component 1. In addition, the surface of the coil wiring 21 on the side that discharges current can be made smoother than the surface of conventional coil wiring. The two coil wirings 21 mentioned above may be, for example, the first coil wiring 21a and the second coil wiring 21b, the second coil wiring 21b and the third coil wiring 21c, the third coil wiring 21c and the fourth coil wiring 21d, or the fourth coil wiring 21d and the fifth coil wiring 21e.

[0059] (Base model 10) The insulating layer 11 contained in the base body 10 includes a glass portion and an inorganic filler. The glass portion, the inorganic filler, and their relationship can be configured in the same way as in the first embodiment. For example, the insulating layer 11 includes a glass portion and an inorganic filler, The glass portion and inorganic filler contain SiO2, X2O3, and R2O. X is at least one of Al and B, R is an alkali metal atom, Mass M of SiO2 SiO2 The mass M of X2O3 X2O3 , and the mass M of R2O R2O teeth, M X2O3 / (M SiO2 +MX2O3 ) ≤ 0.20, and M R2O / (M SiO2 +M X2O3 The relationship ) ≥ 0.008 is possible.

[0060] Note that the configuration of base body 10 is not limited to the above. For example, M X2O3 / (M SiO2 +M X2O3 ) ≤ 0.20, and M R2O / (M SiO2 +M X2O3 Even if the relationship (YX) ≥ 0.008 is not met, it is possible to adjust the Young's modulus to satisfy the relationship (YX) / Y × 100 ≤ 15 by creating a low-oxygen atmosphere during the firing of the laminate.

[0061] (Manufacturing method) The method for manufacturing the inductor component 1 can be the same as in the first embodiment.

[0062] It should be noted that the present invention is not limited to the first and second embodiments described above, and design modifications are possible without departing from the spirit of the invention.

[0063] For example, the materials used are not limited to those exemplified above, but include any known materials.

[0064] This disclosure includes the following aspects. <1> A base body with multiple insulating layers stacked on top of each other, Two or more conductive parts arranged on or within the aforementioned body, Equipped with, The insulating layer comprises a glass portion and an inorganic filler. At least one of the glass portion and the inorganic filler comprises SiO2, X2O3 and R2O. X is at least one of Al and B, R is an alkali metal atom, Mass M of SiO2 SiO2 The mass M of X2O3 X2O3 , and the mass M of R2O R2O teeth, M X2O3 / (M SiO2 +M X2O3 ) ≤ 0.20, and M R2O / (M SiO2 +M X2O3 The relationship is such that ) ≥ 0.008. Electronic components. <2> A base body with multiple insulating layers stacked on top of each other, Two or more conductive parts arranged on or within the aforementioned body, Equipped with, The Young's modulus X at a point 10 μm inward from the contact surface between the conductor and the element, and the Young's modulus Y at a point 30 μm inward from the element, are related by (YX) / Y × 100 ≤ 15. Electronic components. <3> The Young's modulus X at a point 10 μm inward from the contact surface between the conductor and the element, and the Young's modulus Y at a point 30 μm inward from the element, are related by (YX) / Y × 100 ≤ 15. <1> Electronic components mounted on [the device]. <4> The relationship (YX) / Y × 100 ≤ 10 holds true. <2> The electronic components listed. <5> The relationship (YX) / Y × 100 ≤ 10 holds true. <3> The electronic components listed. <6> The insulating layer comprises a glass portion and an inorganic filler. At least one of the glass portion and the inorganic filler comprises SiO2, X2O3 and R2O. X is at least one of Al and B, R is an alkali metal atom. <2> or <4> The electronic components listed. <7> M X2O3 / (M SiO2 +M X2O3 ) ≤ 0.10, <1> , <3> or <5> The electronic components listed. <8> MR2O / (M SiO2 +M X2O3 ) ≥ 0.05 <1> , <3> , <5> or <7> The electronic components listed. <9> The average particle size D50 of the inorganic filler is in the range of 0.1 to 5 μm. <1> , <3> , <5> , <7> or <8> The electronic components listed. <10> The inorganic filler comprises at least one of Mg2SiO4, CaSiO3, ZrO2, Al2O3, CeO, TiO2, Fe2O3, SiO2, and perovskite-type oxides. <1> , <3> , <5> , <7> ~ <9> An electronic component listed in any one of the following documents. <11> The ratio of the glass portion to the inorganic filler is in the range of 0.4:0.6 to 0.8:0.2 by volume. <1> , <3> , <5> , <7> ~ <10> An electronic component listed in any one of the following documents. <12> The two or more conductor parts are a first external conductor part and a second external conductor part arranged on the base body. <1> ~ <11> An electronic component listed in any one of the following documents. <13> Inductor components, <1> ~ <12> An electronic component listed in any one of the following documents. <14> The inductor component has a coil formed by stacking multiple coil wires arranged in the base body. The two or more conductor parts are multiple coil wirings. <13> The electronic components listed. <15> moreover, A coil in which multiple coil wirings electrically connected to the first and second outer conductor portions are stacked. It has, The shortest distance between the coil wiring and the outer surface of the base body in a cross section along the coil wiring and perpendicular to the direction in which the coil wiring is stacked is 20 μm or less. <14> The electronic components listed. [Examples]

[0065] The following will provide a more detailed explanation through examples, but this disclosure is not limited to these examples.

[0066] [Composition ratio of the base body] In the DPA (Destructive Physical Analysis) cross-section obtained by embedding electronic components in resin, curing the resin, and polishing the resin together with the electronic components, wavelength-dispersive X-ray fluorescence (WDX) analysis of the base material was performed, and the elemental ratio (atom%) was calculated and converted.

[0067] [Diffusion distance of Ag] WDX mapping analysis was performed near the conductive portion (Ag) in the DPA cross-section. From the detection intensity data of the obtained Ag mapping diagram, the Ag diffusion distance was defined as the distance from the conductive portion to the position where the intensity of the element becomes 1 / 20, when the intensity of the Ag conductive portion is set to 100.

[0068] [Young's modulus difference] The indentation modulus of the base material of the DPA cross section was evaluated using a microhardness tester (product name: DUH-201, manufactured by Shimadzu Corporation). The average value of Young's modulus was calculated for N=10. Measurements were taken near the conductor and at locations away from the conductor, and the rate of change for each location was calculated.

[0069] (Example 1-1) The ratios of inorganic components were adjusted to SiO2, X2O3 (where X is Al and B), and R2O (where R is K) according to the proportions shown in Table 1. After layering this mixture, it was fired at 900°C to create an inductor.

[0070] (Examples 1-2) The mixture obtained in Example 1-1 was laminated and then fired at 940°C to create an inductor.

[0071] (Examples 2-7) A mixture was obtained in the same manner as in Example 1, and after stacking them, the inductors were fabricated by firing at 900°C and 940°C.

[0072] (Examples 8-11, Comparative Examples 1-2) The procedure was the same as in Example 1, except that the mixture was mixed in the proportions shown in Table 2.

[0073] [Table 1]

[0074] [Table 2]

[0075] As shown in Tables 1 and 2, in Examples 1 to 11, M X2O3 / (M SiO2 +M X2O3 ) is 0.20 or less, M R2O / (M SiO2 +M X2O3 The (YX) / Y × 100 value was 0.008 or higher, and when fired at 900°C and 940°C, the value of (YX) / Y × 100 was 15 or less. In this case, the diffusion distance of metal atoms at 900°C and 940°C was shortened, indicating that the diffusion of metal contained in the conductive part into the substrate was suppressed. As shown in Table 2, in Comparative Examples 1 and 2, M X2O3 / (M SiO2 +M X2O3 ) is greater than 0.20, M R2O / (M SiO2 +M X2O3 The value of (YX) / Y×100 was less than 0.008, and when fired at 900°C and 940°C, the value of (YX) / Y×100 was 15 or greater. In this case, the diffusion distance of metal atoms at 900°C and 940°C was long, indicating that the metal contained in the conductive part diffused into the substrate. [Explanation of Symbols]

[0076] 1. Inductor component 10 Base Body 11 Insulating Layers 13 First aspect 14 Second aspect 15 First end surface 16 Second end face 17. Bottom 18 Top surface 20 coils 21, 21a, 21b, 21c, 21d, 21e Coil wiring 25 Coil conductor layer 27,28 Output wiring 30 First outer conductor section 33 First outer conductor layer 40 Second outer conductor section 43. Second outer conductor layer

Claims

1. A base body with multiple insulating layers stacked on top of each other, Two or more conductive parts arranged on or within the aforementioned body, Equipped with, The insulating layer comprises a glass portion and an inorganic filler. At least one of the glass portion and the inorganic filler is SiO ２ , X ２ O ３ and R ２ Including O, X is at least one of Al and B, R is an alkali metal atom, The mass M of SiO ２ , the mass M of X ＳｉＯ２ O ２ , and the mass M of RO ３ are Ｘ２Ｏ３ , and ２ the mass M of RO Ｒ２Ｏ is M Ｘ２Ｏ３ / (M ＳｉＯ２ +M Ｘ２Ｏ３ ) ≤ 0.20, and M Ｒ２Ｏ / (M ＳｉＯ２ +M Ｘ２Ｏ３ The relationship is such that ) ≥ 0.008, Electronic components.

2. A base body with multiple insulating layers stacked on top of each other, Two or more conductive parts arranged on or within the aforementioned body, Equipped with, The Young's modulus X at a point 10 μm inward from the contact surface between the conductor and the substrate, and the Young's modulus Y at a point 30 μm inward from the substrate, are related by (Y - X) / Y × 100 ≤ 15. Electronic components.

3. The Young's modulus X at a point 10 μm inward from the contact surface between the conductor and the substrate, and the Young's modulus Y at a point 30 μm inward from the substrate, are related by (Y - X) / Y × 100 ≤ 15. The electronic component as described in claim 1.

4. The electronic component according to claim 2, wherein the relationship (Y - X) / Y × 100 ≤ 10.

5. The electronic component according to claim 3, wherein the relationship (Y - X) / Y × 100 ≤ 10.

6. The insulating layer comprises a glass portion and an inorganic filler. At least one of the glass portion and the inorganic filler is SiO ２ , X ２ O ３ and R ２ Including O, X is at least one of Al and B, R is an alkali metal atom. The electronic component according to claim 2 or 4.

7. M Ｘ２Ｏ３ / (M ＳｉＯ２ +M Ｘ２Ｏ３ The electronic component according to claim 1, 3, or 5, wherein ) ≤ 0.

10.

8. M Ｒ２Ｏ / (M ＳｉＯ２ +M Ｘ２Ｏ３ The electronic component according to claim 1, 3, 5, or 7, wherein ) ≥ 0.

05.

9. The electronic component according to claim 1, 3, 5, 7, or 8, wherein the average particle size D50 of the inorganic filler is in the range of 0.1 to 5 μm.

10. The inorganic filler is Mg ２ SiO ４ CaSiO ３ , ZrO ２ Al ２ O ３ , CeO, TiO ２ Fe ２ O ３ SiO ２ The electronic component according to any one of claims 1, 3, 5, or 7-9, comprising, and at least one of perovskite-type oxides.

11. The electronic component according to any one of claims 1, 3, 5, or 7 to 10, wherein the ratio of the glass portion to the inorganic filler is in the range of 0.4:0.6 to 0.8:0.2 by volume.

12. The electronic component according to any one of claims 1 to 11, wherein the two or more conductive parts are a first external conductive part and a second external conductive part arranged on the base body.

13. An inductor component, as described in any one of claims 1 to 12.

14. The inductor component has a coil formed by stacking multiple coil wires arranged in the base body. The electronic component according to claim 13, wherein the two or more conductor parts are a plurality of coil wirings.

15. moreover, A coil in which multiple coil wirings electrically connected to the first and second outer conductor portions are stacked. It has, The electronic component according to claim 14, wherein the shortest distance between the coil wiring and the outer surface of the base body in a cross section along the coil wiring and perpendicular to the direction in which the coil wiring is stacked is 20 μm or less.

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