Ceramic substrates, semiconductor device packages, electrostatic chucks, substrate fixing devices

JP2026103223APending Publication Date: 2026-06-24SHINKO ELECTRIC IND CO LTD

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SHINKO ELECTRIC IND CO LTD
Filing Date
2024-12-12
Publication Date
2026-06-24

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Abstract

In a ceramic substrate having a ceramic base made of aluminum oxide and a conductive layer embedded in the base, the objective is to achieve both improved adhesion between the base and the conductive layer and a reduction in the resistivity of the conductive layer. [Solution] The ceramic substrate comprises a base body which is a ceramic made of aluminum oxide, and a conductive layer in contact with the base body, wherein the conductive layer includes a first layer which is a fired body mainly composed of metal and containing aluminum oxide, a second layer which is laminated on the first layer and is a fired body mainly composed of metal and not containing aluminum oxide, and a third layer which is laminated on the second layer and is a fired body mainly composed of metal and containing aluminum oxide.
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Claims

1. A ceramic substrate made of aluminum oxide, The substrate has a conductive layer in contact with it, The aforementioned conductive layer is The first layer is a sintered body mainly composed of metal and containing aluminum oxide, A second layer is laminated on the first layer, and is a fired body mainly composed of metal and free of aluminum oxide. A ceramic substrate comprising a third layer, which is a fired body mainly composed of metal and containing aluminum oxide, laminated on the second layer.

2. The ceramic substrate according to claim 1, wherein the metal is tungsten or molybdenum.

3. The ceramic substrate according to claim 1, wherein the substrate has a purity of 99.5% or more of the aluminum oxide.

4. The ceramic substrate according to claim 3, wherein the substrate has a relative density of 97% or more with respect to aluminum oxide.

5. The ceramic substrate according to claim 3, wherein the substrate has an average particle size of aluminum oxide of 1.0 μm or more and 3.0 μm or less.

6. A semiconductor device package having a ceramic substrate according to any one of claims 1 to 5.

7. An electrostatic chuck comprising an RF electrode in the conductive layer, in a ceramic substrate according to any one of claims 1 to 5.

8. base plate and A substrate fixing device having an electrostatic chuck according to claim 7 mounted on one side of the base plate.