High-frequency modules and communication devices

Abstract

To provide a high-frequency module capable of improving heat dissipation. [Solution] The high-frequency module 1 comprises a first mounting substrate 2A, a first elastic wave filter 3, an external connection terminal 11, an adhesive conductor 5, and a through conductor 6. The first elastic wave filter 3 is located on the first main surface 21 of the first mounting substrate 2A. The adhesive conductor 5 is located between the first main surface 21 of the first mounting substrate 2A and the first elastic wave filter 3. The through conductor 6 penetrates the first mounting substrate 2A and is connected to the external connection terminal 11 and the adhesive conductor 5. The first elastic wave filter 3 has a first substrate 31 and a first functional electrode 32. The first functional electrode 32 is located on the third main surface 311 of the first substrate 31. The fourth main surface 312 of the first substrate 31 is connected to the adhesive conductor 5. The adhesive conductor 5 and the through conductor 6 overlap with the first functional electrode 32 of the first elastic wave filter 3 in a plan view from the thickness direction D1 of the first mounting substrate 2A.

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly to a high-frequency module including a surface acoustic wave filter and a communication device including the high-frequency module.

Background Art

[0002] Patent Document 1 describes a high-frequency module including a surface acoustic wave filter. The high-frequency module described in Patent Document 1 includes a surface acoustic wave filter on a mounting substrate, and the top surface of the surface acoustic wave filter is connected to a shield layer to improve heat dissipation. In the substrate of the surface acoustic wave filter, the main surface facing the main surface provided with the functional electrodes is the top surface of the surface acoustic wave filter.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the conventional high-frequency module described in Patent Document 1, particularly due to heat generation from the functional electrodes, characteristic degradation and failures may become problems, and heat dissipation may be insufficient by heat dissipation from the shield layer connected to the top surface of the surface acoustic wave filter.

[0005] In view of the above points, the present invention is made, and an object thereof is to provide a high-frequency module and a communication device capable of enhancing heat dissipation.

Means for Solving the Problems

[0006] A high-frequency module according to one aspect of the present invention comprises a first mounting substrate, a first elastic wave filter, an external connection terminal, an adhesive conductor, and a through conductor. The first mounting substrate has a first main surface and a second main surface facing each other. The first elastic wave filter is disposed on the first main surface of the first mounting substrate. The external connection terminal is disposed on the second main surface of the first mounting substrate. The adhesive conductor is disposed between the first main surface of the first mounting substrate and the first elastic wave filter. The through conductor penetrates the first mounting substrate in the thickness direction of the first mounting substrate and is connected to the external connection terminal and the adhesive conductor. The first elastic wave filter comprises a first substrate and a first functional electrode. The first substrate has a third main surface and a fourth main surface facing each other and includes a piezoelectric material. The first functional electrode is disposed on the third main surface of the first substrate. The fourth main surface of the first substrate is connected to the adhesive conductor. The adhesive conductor and the through-conductor overlap with the first functional electrode of the first elastic wave filter in a plan view of the first mounting substrate from the thickness direction.

[0007] A communication device according to one aspect of the present invention comprises the high-frequency module and a signal processing circuit. The signal processing circuit is connected to the high-frequency module. [Effects of the Invention]

[0008] According to the high-frequency module and communication device according to the above-described embodiment of the present invention, it is possible to improve heat dissipation. [Brief explanation of the drawing]

[0009] [Figure 1] Figure 1 is a cross-sectional view of a high-frequency module according to Embodiment 1. [Figure 2] Figure 2 is a perspective view of the same high-frequency module. [Figure 3] Figure 3 is a cross-sectional view of a modified high-frequency module according to Embodiment 1. [Figure 4] Figure 4 is a cross-sectional view of a high-frequency module according to Embodiment 2. [Figure 5] Figure 5 is a perspective view of the same high-frequency module. [Figure 6] Figure 6 is a cross-sectional view of a modified high-frequency module according to Embodiment 2. [Figure 7] Figure 7 is a cross-sectional view of a high-frequency module according to Embodiment 3. [Figure 8] Figure 8 is a cross-sectional view of the same high-frequency module. [Figure 9] Figure 9 is a perspective view of the same high-frequency module. [Figure 10] Figure 10 is a cross-sectional view of a high-frequency module according to Embodiment 4. [Figure 11] Figure 11 is a perspective view of the same high-frequency module. [Figure 12] Figure 12 is a cross-sectional view of a high-frequency module according to Embodiment 5. [Figure 13] Figure 13 is a perspective view of the main part of the high-frequency module according to Embodiment 6. [Figure 14] Figure 14 is a plan view of the through-conductor of the high-frequency module shown above. [Figure 15] Figure 15 is a perspective view of the main part of a high-frequency module according to a modified example 1 of Embodiment 6. [Figure 16] Figure 16 is a plan view of the through-conductor of the high-frequency module shown above. [Figure 17] Figure 17 is a perspective view of the main part of a high-frequency module according to a modified example 2 of Embodiment 6. [Figure 18] Figure 18 is a plan view of the through-conductor of the high-frequency module shown above. [Figure 19] Figure 19 is a schematic diagram of a communication device according to Embodiment 7. [Modes for carrying out the invention]

[0010] Hereinafter, the high-frequency module 1 according to Embodiments 1 to 6 and the communication device 9 according to Embodiment 7 will be described with reference to the drawings. The drawings referred to in the following embodiments and the like are schematic diagrams, and the ratios of the sizes and thicknesses of the respective components in the drawings do not necessarily reflect the actual dimensional ratios.

[0011] (Embodiment 1) (1) High-frequency module The configuration of the high-frequency module 1 according to Embodiment 1 will be described with reference to the drawings.

[0012] As shown in FIG. 1, the high-frequency module 1 according to Embodiment 1 includes a first mounting substrate 2A, a first surface acoustic wave filter 3, an external connection terminal 11, an adhesive conductor 5, and a through conductor 6. Note that FIG. 1 is a cross-sectional view taken along line X1-X1 in FIG. 2.

[0013] The first mounting substrate 2A has a first main surface 21 and a second main surface 22 facing each other. The first surface acoustic wave filter 3 is disposed on the first main surface 21 of the first mounting substrate 2A. The external connection terminal 11 is disposed on the second main surface 22 of the first mounting substrate 2A. The adhesive conductor 5 is disposed between the first main surface 21 of the first mounting substrate 2A and the first surface acoustic wave filter 3. The through conductor 6 penetrates the first mounting substrate 2A in the thickness direction D1 of the first mounting substrate 2A and is connected to the external connection terminal 11 and the adhesive conductor 5.

[0014] The first surface acoustic wave filter 3 has a first substrate 31 and a first functional electrode 32. The first substrate 31 has a third main surface 311 and a fourth main surface 312 facing each other and includes a piezoelectric body 313. The first functional electrode 32 is disposed on the third main surface 311 of the first substrate 31.

[0015] The fourth main surface 312 of the first substrate 31 is connected to the adhesive conductor 5. The adhesive conductor 5 and the through conductor 6 overlap the first functional electrode 32 of the first surface acoustic wave filter 3 in a plan view from the thickness direction D1 of the first mounting substrate 2A.

[0016] According to the high-frequency module 1 of Embodiment 1, the heat dissipation path from the first elastic wave filter 3 located on the first main surface 21 of the first mounting substrate 2A to the external connection terminal 11 located on the second main surface 22 of the first mounting substrate 2A can be shortened, thereby enabling effective heat dissipation.

[0017] (2) Each component of the high-frequency module As shown in Figures 1 and 2, the high-frequency module 1 according to Embodiment 1 comprises a first mounting substrate 2A, a first elastic wave filter 3, a second mounting substrate 2B, a second elastic wave filter 4, a plurality of (only one is shown in Figure 1) external connection terminals 11, a first resin member 7A, a first shield layer 8A, an adhesive conductor 5, and a through conductor 6. The high-frequency module 1 according to Embodiment 1 also comprises a second resin member 7B and a second shield layer 8B. Module M1 is composed of the second mounting substrate 2B, the first elastic wave filter 3, the second elastic wave filter 4, the second resin member 7B, and the second shield layer 8B, etc.

[0018] The high-frequency module 1 according to Embodiment 1 has a transmitting function that transmits a high-frequency signal (transmitting signal) and a receiving function that receives a high-frequency signal (receiving signal). In other words, the high-frequency module 1 according to Embodiment 1 is a transmitting and receiving module.

[0019] The components of the high-frequency module 1 according to Embodiment 1 will be described below with reference to the drawings.

[0020] (2.1) First mounting board As shown in Figure 1, the first mounting substrate 2A has a first main surface 21 and a second main surface 22. The first main surface 21 and the second main surface 22 face each other. More specifically, the first main surface 21 and the second main surface 22 face each other in the thickness direction D1 of the first mounting substrate 2A. The first mounting substrate 2A is a substrate for arranging a plurality of electronic components, and is, for example, in the shape of a rectangular plate. The first main surface 21 and the second main surface 22 are, for example, rectangular. The second main surface 22 faces the external substrate (not shown) when the high-frequency module 1 is mounted on an external substrate.

[0021] The first mounting substrate 2A has a plurality of dielectric layers, including a first dielectric layer 24 and a second dielectric layer 25, and a plurality of conductive layers. The first mounting substrate 2A is, for example, a multilayer substrate having a plurality of dielectric layers and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are stacked in the thickness direction D1 of the first mounting substrate 2A.

[0022] Each of the multiple conductive layers includes one or more conductive portions in a plane perpendicular to the thickness direction D1 of the first mounting substrate 2A. The multiple conductive layers are formed in a predetermined pattern defined for each layer. The material of each conductive layer is, for example, copper.

[0023] The multiple conductive layers include a ground layer 13. The ground layer 13 is a layer set to ground potential (reference potential) and is provided inside the first mounting substrate 2A. When the high-frequency module 1 is placed on an external substrate (e.g., a motherboard), the ground layer 13 is connected to the ground of the external substrate via via conductors, etc., of the first mounting substrate 2A and maintained at ground potential (reference potential).

[0024] The first mounting substrate 2A is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. However, the first mounting substrate 2A is not limited to an LTCC substrate; it may also be, for example, a printed circuit board, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate.

[0025] (2.2) First elastic wave filter As shown in Figure 1, the first elastic wave filter 3 is positioned on the first main surface 21 of the first mounting substrate 2A. In Embodiment 1, the first elastic wave filter 3 is positioned on the first main surface 21 of the first mounting substrate 2A via an adhesive conductor 5. In Embodiment 1, the first elastic wave filter 3 is positioned on the first main surface 21 of the first mounting substrate 2A by being positioned on the second mounting substrate 2B.

[0026] The first elastic wave filter 3 comprises a first substrate 31, a first functional electrode 32, a plurality of first connection terminals 33 (only two are shown in Figure 1), a support layer 34, a cover layer 35, a plurality of wiring electrodes 36 (only two are shown in Figure 1), and a plurality of connection via conductors 37 (only two are shown in Figure 1).

[0027] The first substrate 31 has a third main surface 311 and a fourth main surface 312, and includes a piezoelectric element 313. The third main surface 311 and the fourth main surface 312 face each other. More specifically, the third main surface 311 and the fourth main surface 312 face each other in the thickness direction of the first substrate 31. The thickness direction of the first substrate 31 is the direction along the thickness direction D1 of the first mounting substrate 2A.

[0028] The first substrate 31 in Embodiment 1 is a piezoelectric substrate, for example, a lithium tantalate substrate or a lithium niobate substrate.

[0029] The first functional electrode 32 is located on the third main surface 311 of the first substrate 31. If the first elastic wave filter 3 is a SAW (Surface Acoustic Wave) filter, the first functional electrode 32 is a plurality of IDT (Interdigital Transducer) electrodes.

[0030] Multiple first connection terminals 33 are connected to the sixth main surface 292 of the second mounting substrate 2B. More specifically, multiple first connection terminals 33 are connected to a conductive layer provided on the sixth main surface 292 of the second mounting substrate 2B. Multiple first connection terminals 33 are connected to wiring electrodes 36 that overlap in the thickness direction of the first substrate 31 among multiple wiring electrodes 36. Multiple first connection terminals 33 are formed, for example, in a circular shape. Each first connection terminal 33 is formed, for example, with solder. Multiple first connection terminals 33 are exposed from the cover layer 35.

[0031] The support layer 34 is provided on the third main surface 311 side of the first substrate 31. In a plan view from the thickness direction of the first substrate 31, the support layer 34 surrounds the first functional electrode 32. In a plan view from the thickness direction of the first substrate 31, the support layer 34 is, for example, rectangular in shape. The support layer 34 has electrical insulating properties. The material of the support layer 34 is epoxy resin, polyimide, etc.

[0032] The cover layer 35 is flat. The cover layer 35 is positioned on the support layer 34 so as to face the first substrate 31 in the thickness direction of the first substrate 31. The cover layer 35 overlaps with the first functional electrode 32 in the thickness direction of the first substrate 31, and is separated from the first functional electrode 32 in the thickness direction of the first substrate 31. The cover layer 35 has electrical insulating properties. The material of the cover layer 35 is epoxy resin, polyimide, etc. The first elastic wave filter 3 has a space enclosed by the first substrate 31, the support layer 34, and the cover layer 35. The space contains a gas. The gas is air, an inert gas (e.g., nitrogen gas), etc.

[0033] Multiple wiring electrodes 36 are formed on the third main surface 311 of the first substrate 31. The multiple wiring electrodes 36 are connected to the first functional electrode 32.

[0034] Multiple connecting via conductors 37 connect multiple first connection terminals 33 and multiple wiring electrodes 36.

[0035] The first elastic wave filter 3 is positioned on the sixth main surface 292 of the second mounting substrate 2B by being connected to a plurality of electrodes (not shown) provided on the sixth main surface 292 of the second mounting substrate 2B via a plurality of first connection terminals 33.

[0036] (2.3) Second mounting board As shown in Figure 1, the second mounting substrate 2B has a fifth main surface 291 and a sixth main surface 292. The fifth main surface 291 and the sixth main surface 292 face each other. More specifically, the fifth main surface 291 and the sixth main surface 292 face each other in the thickness direction of the second mounting substrate 2B. The second mounting substrate 2B is a substrate for arranging a plurality of electronic components, and is, for example, in the shape of a rectangular plate. The fifth main surface 291 and the sixth main surface 292 are, for example, rectangular.

[0037] The second mounting substrate 2B has a plurality of dielectric layers and a plurality of conductive layers. The second mounting substrate 2B is, for example, a multilayer substrate having a plurality of dielectric layers and a plurality of conductive layers. The plurality of dielectric layers and a plurality of conductive layers are stacked in the thickness direction of the second mounting substrate 2B.

[0038] Each of the multiple conductive layers includes one or more conductive portions in a plane perpendicular to the thickness direction of the second mounting substrate 2B. The multiple conductive layers are formed in a predetermined pattern defined for each layer. The material of each conductive layer is, for example, copper.

[0039] The multiple conductive layers include a ground layer. The ground layer is a layer set to ground potential (reference potential) and is located inside the second mounting substrate 2B.

[0040] The second mounting board 2B is, for example, an LTCC board. However, the second mounting board 2B is not limited to an LTCC board; it may also be, for example, a printed circuit board, an HTCC board, or a resin multilayer board.

[0041] The second mounting board 2B is connected to the first mounting board 2A via a plurality of connecting members 12 (only two are shown in Figure 1). Each of the plurality of connecting members 12 has a pattern conductor 121 and a via conductor 122. The pattern conductor 121 is located on the first main surface 21 of the first mounting board 2A. The via conductor 122 is located on the second mounting board 2B and is connected to the pattern conductor 121.

[0042] (2.4) Second elastic wave filter As shown in Figure 1, the second elastic wave filter 4 is located on the fifth main surface 291 of the second mounting substrate 2B.

[0043] The second elastic wave filter 4 comprises a second substrate 41, a second functional electrode 42, a plurality of second connection terminals 43, a support layer 44, a cover layer 45, a plurality of wiring electrodes 46, and a plurality of connection via conductors 47.

[0044] The second substrate 41 has a seventh main surface 411 and an eighth main surface 412, and includes a piezoelectric element 413. The seventh main surface 411 and the eighth main surface 412 face each other. More specifically, the seventh main surface 411 and the eighth main surface 412 face each other in the thickness direction of the second substrate 41. The thickness direction of the second substrate 41 is the direction along the thickness direction D1 of the first mounting substrate 2A.

[0045] The second substrate 41 in Embodiment 1 is a piezoelectric substrate, for example, a lithium tantalate substrate or a lithium niobate substrate.

[0046] The second functional electrode 42 is located on the seventh main surface 411 of the second substrate 41. If the second elastic wave filter 4 is a SAW filter, the second functional electrode 42 is a plurality of IDT electrodes.

[0047] Multiple second connection terminals 43 are arranged on the seventh main surface 411 of the second substrate 41. Multiple second connection terminals 43 are connected to a conductive layer provided on the fifth main surface 291 of the second mounting substrate 2B. Multiple second connection terminals 43 are connected to wiring electrodes 46 that overlap in the thickness direction of the second substrate 41 among multiple wiring electrodes 46. Multiple second connection terminals 43 are formed, for example, in a circular shape. Each second connection terminal 43 is formed, for example, with solder. Multiple second connection terminals 43 are exposed from the cover layer 45.

[0048] The support layer 44 is provided on the seventh main surface 411 side of the second substrate 41. In a plan view from the thickness direction of the second substrate 41, the support layer 44 surrounds the second functional electrode 42. In a plan view from the thickness direction of the second substrate 41, the support layer 44 is, for example, rectangular in shape. The support layer 44 has electrical insulating properties. The material of the support layer 44 is epoxy resin, polyimide, etc.

[0049] The cover layer 45 is flat. The cover layer 45 is positioned on the support layer 44 so as to face the second substrate 41 in the thickness direction of the second substrate 41. The cover layer 45 overlaps with the second functional electrode 42 in the thickness direction of the second substrate 41, and is separated from the second functional electrode 42 in the thickness direction of the second substrate 41. The cover layer 45 has electrical insulating properties. The material of the cover layer 45 is epoxy resin, polyimide, etc. The second elastic wave filter 4 has a space enclosed by the second substrate 41, the support layer 44, and the cover layer 45. The space contains a gas. The gas is air, an inert gas (e.g., nitrogen gas), etc.

[0050] Multiple wiring electrodes 46 are formed on the seventh main surface 411 of the second substrate 41. Multiple wiring electrodes 46 are connected to the second functional electrode 42.

[0051] Multiple connecting via conductors 47 connect multiple second connecting terminals 43 and multiple wiring electrodes 46.

[0052] The second elastic wave filter 4 is positioned on the fifth main surface 291 of the second mounting substrate 2B by being connected to a plurality of electrodes (not shown) provided on the fifth main surface 291 of the second mounting substrate 2B via a plurality of second connection terminals 43.

[0053] (2.5) External connection terminals As shown in Figure 1, the multiple external connection terminals 11 are arranged on the second main surface 22 of the first mounting board 2A. The multiple external connection terminals 11 are terminals for electrically connecting the first mounting board 2A and an external board (not shown). The multiple external connection terminals 11 are arranged at intervals from each other on the second main surface 22 of the first mounting board 2A. In a plan view from the thickness direction D1 of the first mounting board 2A, the multiple external connection terminals 11 are arranged in a matrix along the first direction D21 and the second direction D22 (see Figure 2).

[0054] Each of the multiple external connection terminals 11 is a flat conductive member. The material of the multiple external connection terminals 11 is, for example, metal (e.g., copper, copper alloy, etc.).

[0055] Each external connection terminal 11 is connected to an external connection electrode (not shown) of an external substrate. In this specification, "an external connection terminal 11 is connected to an external connection electrode of an external substrate" means not only that the external connection terminal 11 and the external connection terminal of the external substrate are in contact, but also that the external connection terminal 11 and the external connection terminal of the external substrate are electrically connected via a conductive electrode, conductive terminal, wiring, or other circuit component. Multiple external connection terminals 11 are connected to the external connection electrodes of the external substrate, for example, via a connecting member made of a conductor (e.g., a solder bump).

[0056] (2.6) First resin member As shown in Figure 1, the first resin member 7A is positioned on the first main surface 21 of the first mounting substrate 2A. The first resin member 7A includes a resin and a filler (not shown). The resin is, for example, an epoxy resin. The first resin member 7A is in contact with the first main surface 21 of the first mounting substrate 2A and covers at least a portion of the module M1. That is, the first resin member 7A covers at least a portion of the first elastic wave filter 3. This protects the first mounting substrate 2A and the module M1 (first elastic wave filter 3).

[0057] (2.7) First Shield Layer As shown in Figure 1, the first shield layer 8A covers the side surface 72 of the first resin member 7A and at least a portion of the first mounting substrate 2A. More specifically, the first shield layer 8A covers the top surface 71 and side surface 72 of the first resin member 7A and the side surface 23 of the first mounting substrate 2A. The top surface 71 of the first resin member 7A is the main surface of the first resin member 7A opposite to the first mounting substrate 2A side.

[0058] The first shield layer 8A has a top surface portion 81 and a side surface portion 82. The top surface portion 81 covers the top surface 71 of the first resin member 7A. The side surface portion 82 is provided protruding from the outer edge of the top surface portion 81 and covers the side surface 72 of the first resin member 7A and the side surface 23 of the first mounting substrate 2A.

[0059] The first shield layer 8A is conductive. More specifically, the first shield layer 8A has a multilayer structure in which multiple metal layers are stacked. The metal layers contain one or more types of metal. However, the first shield layer 8A is not limited to the multilayer structure described above, and may consist of a single metal layer.

[0060] The first shielding layer 8A is provided, for example, for electromagnetic shielding inside and outside the high-frequency module 1. The first shielding layer 8A is in contact with at least a portion of the ground layer 13 of the first mounting substrate 2A. This makes it possible to set the potential of the first shielding layer 8A to the same potential as the ground layer 13.

[0061] (2.8) Ground layer As shown in Figure 1, the ground layer 13 is located inside the first mounting substrate 2A and is connected to the through conductor 6.

[0062] In the high-frequency module 1 according to Embodiment 1, at least a portion of the ground layer 13 is exposed on the side surface 23 of the first mounting substrate 2A and is connected to the first shield layer 8A.

[0063] (2.9) Second resin member As shown in Figure 1, the second resin member 7B includes a first resin part 73 and a second resin part 74.

[0064] The first resin part 73 is located on the fifth main surface 291 of the second mounting substrate 2B. The first resin part 73 includes a resin and a filler (not shown). The resin is, for example, an epoxy resin. The first resin part 73 is in contact with the fifth main surface 291 of the second mounting substrate 2B and covers at least a portion of the second elastic wave filter 4. This protects the second mounting substrate 2B and the second elastic wave filter 4. The second resin part 74 is located on the sixth main surface 292 of the second mounting substrate 2B. The second resin part 74 includes a resin and a filler (not shown). The resin is, for example, an epoxy resin. The second resin part 74 is in contact with the sixth main surface 292 of the second mounting substrate 2B and covers at least a portion of the first elastic wave filter 3. This protects the second mounting substrate 2B and the first elastic wave filter 3.

[0065] (2.10) Second Shield Layer As shown in Figure 1, the second shield layer 8B covers at least a portion of the sides 76, 77 of the second resin member 7B and the second mounting substrate 2B. More specifically, the second shield layer 8B covers the top surface 75 and sides 76, 77 of the second resin member 7B and the sides of the second mounting substrate 2B. The top surface 75 of the second resin member 7B is the main surface of the second resin member 7B opposite to the second mounting substrate 2B side.

[0066] The second shield layer 8B has a top surface portion 83 and a side surface portion 84. The top surface portion 83 covers the top surface 75 of the second resin member 7B. The side surface portion 84 is provided protruding from the outer edge of the top surface portion 83 and covers the side surfaces 76, 77 of the second resin member 7B and the side surfaces of the second mounting substrate 2B.

[0067] The second shield layer 8B is connected to the eighth main surface 412 of the second substrate 41. In other words, the eighth main surface 412 of the second substrate 41 is connected to the second shield layer 8B.

[0068] The second shield layer 8B is conductive. More specifically, the second shield layer 8B has a multilayer structure in which multiple metal layers are stacked. The metal layers contain one or more types of metal. However, the second shield layer 8B is not limited to the multilayer structure described above, and may consist of a single metal layer.

[0069] The second shielding layer 8B is provided, for example, to provide electromagnetic shielding to the inside and outside of the high-frequency module 1. The second shielding layer 8B is in contact with at least a portion of the ground layer of the second mounting substrate 2B. This makes it possible to set the potential of the second shielding layer 8B to the same potential as the ground layer.

[0070] (2.11) Adhesive Conductors As shown in Figure 1, the adhesive conductor 5 is positioned between the first main surface 21 of the first mounting substrate 2A and the first elastic wave filter 3. The adhesive conductor 5 is positioned on the first main surface 21 of the first mounting substrate 2A. More specifically, the adhesive conductor 5 is positioned on the first main surface 21 of the first mounting substrate 2A such that, in a plan view from the thickness direction D1 of the first mounting substrate 2A, it overlaps with the position where the through conductor 6 is formed within the first mounting substrate 2A. The material of the adhesive conductor 5 is, for example, silver.

[0071] The adhesive conductor 5 has main surfaces 51 and 52. The main surfaces 51 and 52 face each other. More specifically, the main surfaces 51 and 52 face each other in the thickness direction D1 of the first mounting substrate 2A.

[0072] The adhesive conductor 5 is connected to the fourth main surface 312 of the first substrate 31 in the first elastic wave filter 3. In other words, the fourth main surface 312 of the first substrate 31 is connected to the adhesive conductor 5.

[0073] (2.12) Through-conductors As shown in Figure 1, the through-conductor 6 penetrates the first mounting substrate 2A in the thickness direction D1 and is connected to the external connection terminal 11 and the adhesive conductor 5.

[0074] The through-conductor 6 includes a first via conductor 61 and a second via conductor 62. The first via conductor 61 is provided so as to penetrate the first dielectric layer 24 of the first mounting substrate 2A. The second via conductor 62 is provided so as to penetrate the second dielectric layer 25 of the first mounting substrate 2A.

[0075] The through-conductor 6 has multiple main surfaces 63 and 64. The main surfaces 63 and 64 face each other. More specifically, the main surfaces 63 and 64 face each other in the thickness direction D1 of the first mounting substrate 2A. The through-conductor 6 is connected to the adhesive conductor 5 on the main surface 63. The through-conductor 6 is also connected to the external connection terminal 11 on the main surface 64.

[0076] The adhesive conductor 5 and the through-conductor 6 overlap with the first functional electrode 32 of the first elastic wave filter 3 in a plan view from the thickness direction D1 of the first mounting substrate 2A.

[0077] (3) Heat dissipation of high-frequency modules Next, the heat dissipation of the high-frequency module 1 according to Embodiment 1 will be described with reference to Figure 1.

[0078] The heat generated at the first functional electrode 32 of the first elastic wave filter 3 is dissipated to the adhesive conductor 5 through the first substrate 31. The heat dissipated to the adhesive conductor 5 is then dissipated to the through conductor 6, and as indicated by arrow A1, it travels along the through conductor 6 and is released to the outside of the high-frequency module 1.

[0079] Furthermore, in Embodiment 1, the heat transferred to the through-conductor 6 is transferred to the ground layer 13, as shown by arrow A2, and released to the outside of the high-frequency module 1.

[0080] This allows heat from the first elastic wave filter 3 to be dissipated through a short heat dissipation path.

[0081] By the way, the first elastic wave filter 3 allows the transmitted signal to pass through, and the second elastic wave filter 4 allows the received signal to pass through.

[0082] As a result, the first elastic wave filter 3, which allows the transmitted signal to pass through, has a higher heat dissipation effect than the second elastic wave filter 4, and by connecting the first elastic wave filter 3 to the adhesive conductor 5 and the through conductor 6, the heat dissipation effect can be further enhanced.

[0083] (4) Effects According to the high-frequency module 1 of Embodiment 1, the heat dissipation path from the first elastic wave filter 3 located on the first main surface 21 of the first mounting substrate 2A to the external connection terminal 11 located on the second main surface 22 of the first mounting substrate 2A can be shortened, thereby enabling effective heat dissipation.

[0084] According to the high-frequency module 1 of Embodiment 1, heat can be dissipated more effectively because it is possible to dissipate heat through the adhesive conductor 5, through conductor 6, ground layer 13, and first shield layer 8A.

[0085] According to the high-frequency module 1 of Embodiment 1, even when the first elastic wave filter 3 and the second elastic wave filter 4 are arranged on the second mounting substrate 2B, heat can be dissipated more effectively.

[0086] According to the high-frequency module 1 of Embodiment 1, heat from the second elastic wave filter 4 can be dissipated from the second shield layer 8B.

[0087] According to the high-frequency module 1 of Embodiment 1, the first elastic wave filter 3, which allows the transmitted signal to pass through, has a higher heat dissipation effect than the second elastic wave filter 4, and since the first elastic wave filter 3 is connected to the adhesive conductor 5 and the through conductor 6, the heat dissipation effect can be enhanced.

[0088] (5) Variant The following describes a modified version of Embodiment 1.

[0089] In the high-frequency module 1 according to a modified embodiment of Embodiment 1, as shown in Figure 3, the adhesive conductor 5 overlaps with the entire fourth main surface 312 of the first substrate 31 of the first elastic wave filter 3 in a plan view from the thickness direction D1 of the first mounting substrate 2A.

[0090] According to the modified high-frequency module 1 of Embodiment 1, the contact area between the adhesive conductor 5 and the fourth main surface 312 of the first substrate 31 of the first elastic wave filter 3 can be increased, making it possible to dissipate heat more effectively.

[0091] The high-frequency module 1 according to the above modified example also provides the same effects as the high-frequency module 1 according to Embodiment 1.

[0092] (Embodiment 2) The high-frequency module 1 according to Embodiment 2 differs from the high-frequency module 1 according to Embodiment 1 (see Figure 1) in that the first elastic wave filter 3 is electrically connected to the first mounting substrate 2A by wire bonding, as shown in Figures 4 and 5. Regarding the high-frequency module 1 according to Embodiment 2, components similar to those in the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted. Figure 4 is a cross-sectional view taken along the line X2-X2 in Figure 5.

[0093] (1) Composition As shown in Figures 4 and 5, the high-frequency module 1 according to Embodiment 2 comprises a first mounting substrate 2A, a first elastic wave filter 3, a plurality of external connection terminals 11 (only one is shown in Figure 4), an adhesive conductor 5, and a through conductor 6.

[0094] The first mounting board 2A of Embodiment 2 further has a plurality of signal terminals 26 (only two are shown in Figure 4), as shown in Figures 4 and 5. The plurality of signal terminals 26 are arranged on the first main surface 21 of the first mounting board 2A. Regarding the first mounting board 2A of Embodiment 2, the same configuration and functions as the first mounting board 2A of Embodiment 1 (see Figure 1) will not be described.

[0095] The first elastic wave filter 3 of Embodiment 2 includes a first substrate 31, a first functional electrode 32, a plurality of first connection terminals 33 (only two are shown in Figure 4), a support layer 34, a cover layer 35, a plurality of wiring electrodes 36 (only two are shown in Figure 4), and a plurality of connection via conductors 37 (only two are shown in Figure 4). Regarding the first elastic wave filter 3 of Embodiment 2, the same configuration and functions as the first elastic wave filter 3 of Embodiment 1 (see Figure 1) will not be described.

[0096] The first substrate 31 has a third main surface 311 and a fourth main surface 312, and includes a piezoelectric element 313. The third main surface 311 and the fourth main surface 312 face each other. More specifically, the third main surface 311 and the fourth main surface 312 face each other in the thickness direction of the first substrate 31. The thickness direction of the first substrate 31 is the direction along the thickness direction D1 of the first mounting substrate 2A.

[0097] The first substrate 31 in Embodiment 2 is a piezoelectric substrate, for example, a lithium tantalate substrate or a lithium niobate substrate.

[0098] The first functional electrode 32 is located on the third main surface 311 of the first substrate 31. If the first elastic wave filter 3 is a SAW filter, the first functional electrode 32 is a plurality of IDT electrodes.

[0099] Each of the multiple first connection terminals 33 is connected to a plurality of signal terminals 26 via bonding wires 14. The multiple first connection terminals 33 are connected to wiring electrodes 36 that overlap in the thickness direction of the first substrate 31 among a plurality of wiring electrodes 36. The multiple first connection terminals 33 are formed, for example, in a circular shape. Each first connection terminal 33 is formed, for example, with solder. The multiple first connection terminals 33 are exposed from the cover layer 35.

[0100] The support layer 34 is provided on the third main surface 311 side of the first substrate 31. In a plan view from the thickness direction of the first substrate 31, the support layer 34 surrounds the first functional electrode 32. In a plan view from the thickness direction of the first substrate 31, the support layer 34 is, for example, rectangular in shape. The support layer 34 has electrical insulating properties. The material of the support layer 34 is epoxy resin, polyimide, etc.

[0101] The cover layer 35 is flat. The cover layer 35 is positioned on the support layer 34 so as to face the first substrate 31 in the thickness direction of the first substrate 31. The cover layer 35 overlaps with the first functional electrode 32 in the thickness direction of the first substrate 31, and is separated from the first functional electrode 32 in the thickness direction of the first substrate 31. The cover layer 35 has electrical insulating properties. The material of the cover layer 35 is epoxy resin, polyimide, etc. The first elastic wave filter 3 has a space enclosed by the first substrate 31, the support layer 34, and the cover layer 35. The space contains a gas. The gas is air, an inert gas (e.g., nitrogen gas), etc.

[0102] Multiple wiring electrodes 36 are formed on the third main surface 311 of the first substrate 31. The multiple wiring electrodes 36 are connected to the first functional electrode 32.

[0103] Multiple connecting via conductors 37 connect multiple first connection terminals 33 and multiple wiring electrodes 36.

[0104] The first elastic wave filter 3 of Embodiment 2 is arranged on the first main surface 21 of the first mounting board 2A by being connected to a plurality of signal terminals 26 provided on the first main surface 21 of the first mounting board 2A via a plurality of first connection terminals 33.

[0105] (2) Heat dissipation Next, the heat dissipation of the high-frequency module 1 according to Embodiment 2 will be described with reference to Figure 4.

[0106] The heat generated at the first functional electrode 32 of the first elastic wave filter 3 is dissipated to the adhesive conductor 5 through the first substrate 31. The heat dissipated to the adhesive conductor 5 is then dissipated to the through conductor 6, as shown in Figure 4, and, as indicated by arrow A3, travels along the through conductor 6 and is released to the outside of the high-frequency module 1.

[0107] This allows heat from the first elastic wave filter 3 to be dissipated through a short heat dissipation path.

[0108] (3) Effects According to the high-frequency module 1 of Embodiment 2, even when the first connection terminal 33 of the first elastic wave filter 3 is connected to the signal terminal 26 of the first mounting board 2A via the bonding wire 14, heat can be effectively dissipated.

[0109] (4) Variations The following describes a modified example of Embodiment 2.

[0110] In the high-frequency module 1 according to a modified example of Embodiment 2, as shown in Figure 6, the adhesive conductor 5 overlaps with the entire fourth main surface 312 of the first substrate 31 of the first elastic wave filter 3 in a plan view from the thickness direction D1 of the first mounting substrate 2A.

[0111] According to the modified high-frequency module 1 of Embodiment 2, the contact area between the adhesive conductor 5 and the fourth main surface 312 of the first substrate 31 of the first elastic wave filter 3 can be increased, making it possible to dissipate heat more effectively.

[0112] The high-frequency module 1 according to the above modified example also provides the same effects as the high-frequency module 1 according to Embodiment 2.

[0113] (Embodiment 3) The high-frequency module 1 according to Embodiment 3 differs from the high-frequency module 1 according to Embodiment 1 (see Figure 1) in that the wiring conductor 28 is provided in close proximity to the through conductor 6, as shown in Figures 7 to 9. Regarding the high-frequency module 1 according to Embodiment 3, components similar to those in the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted. Figure 7 is a cross-sectional view taken along the line X3-X3 in Figure 9. Figure 8 is a cross-sectional view taken along the line Y3-Y3 in Figure 9.

[0114] (1) Composition As shown in Figures 7 to 9, the high-frequency module 1 according to Embodiment 3 comprises a first mounting substrate 2A, a first elastic wave filter 3, a plurality of external connection terminals 11 (only one is shown in Figure 7), an adhesive conductor 5, and a through conductor 6.

[0115] As shown in Figures 7 to 9, the first mounting substrate 2A of Embodiment 3 has a plurality of (two in the example of Figure 7) first dielectric layers 24, a second dielectric layer 25, a plurality of via conductors 27, and a plurality of wiring conductors 28. The second dielectric layer 25 is located between the plurality of first dielectric layers 24. Regarding the first mounting substrate 2A of Embodiment 3, the same configuration and functions as the first mounting substrate 2A of Embodiment 1 (see Figure 1) will not be described.

[0116] Multiple via conductors 27 penetrate the first dielectric layer 24. The material of the multiple via conductors 27 is, for example, copper.

[0117] The multiple via conductors 27 do not overlap with the first functional electrode 32 of the first elastic wave filter 3 in the thickness direction D1 of the first mounting substrate 2A. In the first direction D21, the multiple via conductors 27 are arranged within the first dielectric layer 24 adjacent to the through conductor 6.

[0118] Multiple wiring conductors 28 are provided in the second dielectric layer 25. The material of the multiple wiring conductors 28 is, for example, copper.

[0119] Multiple wiring conductors 28 overlap with corresponding via conductors 27 in the thickness direction D1 of the first mounting substrate 2A. Multiple wiring conductors 28 are arranged in the second dielectric layer 25 adjacent to the through conductor 6 in the first direction D21.

[0120] Due to the arrangement described above, the wiring conductor 28 can be provided in a different position from the through conductor 6, so that the region of the first mounting substrate 2A that overlaps with the first elastic wave filter 3 in the thickness direction D1 of the first mounting substrate 2A can be effectively utilized.

[0121] (2) Heat dissipation Next, the heat dissipation of the high-frequency module 1 according to Embodiment 3 will be described with reference to Figure 7.

[0122] The heat generated at the first functional electrode 32 of the first elastic wave filter 3 is dissipated to the adhesive conductor 5 through the first substrate 31. The heat dissipated to the adhesive conductor 5 is then dissipated to the through conductor 6, and as indicated by arrow A4, is transmitted through the through conductor 6 and released to the outside of the high-frequency module 1.

[0123] This allows heat from the first elastic wave filter 3 to be dissipated through a short heat dissipation path.

[0124] (3) Effects According to the high-frequency module 1 of Embodiment 3, since the wiring conductor 28 can be provided at a different position from the through-conductor 6, the region of the first mounting substrate 2A that overlaps with the first elastic wave filter 3 in the thickness direction D1 of the first mounting substrate 2A can be effectively utilized. As a result, miniaturization can be achieved, including the wiring conductor 28.

[0125] (Embodiment 4) The high-frequency module 1 according to Embodiment 4 differs from the high-frequency module 1 according to Embodiment 1 (see Figure 1) in that the first functional electrode 32 of the first elastic wave filter 3 is located on the opposite side from the first mounting substrate 2A, as shown in Figures 10 and 11. Regarding the high-frequency module 1 according to Embodiment 4, components similar to those in the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted. Figure 10 is a cross-sectional view taken along the line X4-X4 in Figure 11.

[0126] (1) Composition As shown in Figures 10 and 11, the high-frequency module 1 according to Embodiment 4 comprises a first mounting substrate 2A, a first elastic wave filter 3, a plurality of external connection terminals 11 (only one is shown in Figure 10), an adhesive conductor 5, and a through conductor 6.

[0127] The first elastic wave filter 3 of Embodiment 4 has a configuration in which the first functional electrode 32 is located on the opposite side from the first mounting substrate 2A. Regarding the first elastic wave filter 3 of Embodiment 4, the same configuration and functions as the first elastic wave filter 3 of Embodiment 1 (see Figure 1) will not be described.

[0128] The first elastic wave filter 3 of Embodiment 4 includes a first substrate 31, a first functional electrode 32, a plurality of first connection terminals 33 (only two are shown in Figure 10), a support layer 34, a cover layer 35, a plurality of wiring electrodes 36 (only two are shown in Figure 10), and a plurality of connection via conductors 37 (only two are shown in Figure 10). Regarding the first elastic wave filter 3 of Embodiment 4, the same configuration and functions as the first elastic wave filter 3 of Embodiment 1 (see Figure 1) will not be described.

[0129] The first substrate 31 has a third main surface 311 and a fourth main surface 312, and includes a piezoelectric element 313. The third main surface 311 and the fourth main surface 312 face each other. More specifically, the third main surface 311 and the fourth main surface 312 face each other in the thickness direction of the first substrate 31. The thickness direction of the first substrate 31 is the direction along the thickness direction D1 of the first mounting substrate 2A.

[0130] The first functional electrode 32 is located on the third main surface 311 of the first substrate 31. If the first elastic wave filter 3 is a SAW filter, the first functional electrode 32 is a plurality of IDT electrodes.

[0131] Multiple first connection terminals 33 are connected to the first main surface 21 of the first mounting substrate 2A. Multiple first connection terminals 33 are connected to wiring electrodes 36 that overlap in the thickness direction of the first substrate 31 among multiple wiring electrodes 36. Multiple first connection terminals 33 are formed, for example, in a circular shape. Each first connection terminal 33 is formed, for example, with solder. Multiple first connection terminals 33 are exposed from the fourth main surface 312 of the first substrate 31.

[0132] The support layer 34 is provided on the third main surface 311 side of the first substrate 31. In a plan view from the thickness direction of the first substrate 31, the support layer 34 surrounds the first functional electrode 32. In a plan view from the thickness direction of the first substrate 31, the support layer 34 is, for example, rectangular in shape. The support layer 34 has electrical insulating properties. The material of the support layer 34 is epoxy resin, polyimide, etc.

[0133] The cover layer 35 is flat. The cover layer 35 is positioned on the support layer 34 so as to face the first substrate 31 in the thickness direction of the first substrate 31. The cover layer 35 overlaps with the first functional electrode 32 in the thickness direction of the first substrate 31, and is separated from the first functional electrode 32 in the thickness direction of the first substrate 31. The cover layer 35 has electrical insulating properties. The material of the cover layer 35 is epoxy resin, polyimide, etc. The first elastic wave filter 3 has a space enclosed by the first substrate 31, the support layer 34, and the cover layer 35. The space contains a gas. The gas is air, an inert gas (e.g., nitrogen gas), etc.

[0134] Multiple wiring electrodes 36 are formed on the third main surface 311 of the first substrate 31. The multiple wiring electrodes 36 are connected to the first functional electrode 32.

[0135] Multiple connecting via conductors 37 connect multiple first connection terminals 33 and multiple wiring electrodes 36.

[0136] (2) Heat dissipation Next, the heat dissipation of the high-frequency module 1 according to Embodiment 4 will be described with reference to Figure 10.

[0137] The heat generated at the first functional electrode 32 of the first elastic wave filter 3 is dissipated to the adhesive conductor 5 through the first substrate 31. The heat dissipated to the adhesive conductor 5 is then dissipated to the through conductor 6, and as indicated by arrow A5, is transmitted through the through conductor 6 and released to the outside of the high-frequency module 1.

[0138] This allows heat from the first elastic wave filter 3 to be dissipated through a short heat dissipation path.

[0139] (3) Effects In the high-frequency module 1 according to Embodiment 4, similar to the high-frequency module 1 according to Embodiment 1, the heat dissipation path from the first elastic wave filter 3 located on the first main surface 21 of the first mounting substrate 2A to the external connection terminal 11 located on the second main surface 22 of the first mounting substrate 2A can be shortened, thereby enabling effective heat dissipation.

[0140] (Embodiment 5) The high-frequency module 1 according to Embodiment 5 differs from the high-frequency module 1 according to Embodiment 1 (see Figure 1) in that it includes a first elastic wave filter 3A, as shown in Figure 12. Regarding the high-frequency module 1 according to Embodiment 5, components similar to those in the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted.

[0141] (1) Composition As shown in Figure 12, the high-frequency module 1 according to Embodiment 5 comprises a first mounting substrate 2A, a first elastic wave filter 3A, a plurality of external connection terminals 11 (only one is shown in Figure 12), a first shielding layer 8A, an adhesive conductor 5, and a through conductor 6.

[0142] As shown in Figure 12, the first elastic wave filter 3A of Embodiment 5 comprises a first substrate 31A, a first functional electrode 32A, a plurality of (only two shown in Figure 12) first connection terminals 33A, a support layer 34A, a cover layer 35A, a plurality of (only two shown in Figure 12) wiring electrodes 36A, and a plurality of (only two shown in Figure 12) connection via conductors 37. The first elastic wave filter 3A also comprises an acoustic reflection layer E1. Regarding the first elastic wave filter 3A of Embodiment 5, the same configuration and function as the first elastic wave filter 3 of Embodiment 1 (see Figure 1) will not be described.

[0143] The first substrate 31A has a third main surface 311A ​​and a fourth main surface 312A. The third main surface 311A ​​and the fourth main surface 312A face each other. More specifically, the first substrate 31A faces each other in the thickness direction of the first substrate 31A. The thickness direction of the first substrate 31A is the direction along the thickness direction D1 of the first mounting substrate 2A.

[0144] In the first elastic wave filter 3A, the piezoelectric element 313A is positioned between the first electrode 321 and the second electrode 322.

[0145] The acoustic reflection layer E1 is provided on the third main surface 311A ​​of the first substrate 31A. Multiple first electrodes 321 are provided on the acoustic reflection layer E1. The acoustic reflection layer E1 has at least one (e.g., three) low acoustic impedance layers E11 and at least one (e.g., two) high acoustic impedance layers E12. The low acoustic impedance layers E11 have lower acoustic impedance than the high acoustic impedance layers E12. The first elastic wave filter 3A is an SMR (Solidly Mounted Resonator). The material of the multiple high acoustic impedance layers E12 is, for example, platinum. The material of the multiple low acoustic impedance layers E11 is, for example, silicon oxide. The material of the multiple high acoustic impedance layers E12 is not limited to platinum, but may be a metal such as tungsten or tantalum. The material of the multiple high acoustic impedance layers E12 is not limited to a metal, but may be an insulator, for example. Furthermore, the multiple high-acoustic-impedance layers E12 are not limited to being made of the same material; for example, they may be made of different materials. Similarly, the multiple low-acoustic-impedance layers E11 are not limited to being made of the same material; for example, they may be made of different materials. Moreover, the number of high-acoustic-impedance layers E12 and the number of low-acoustic-impedance layers E11 are not limited to being different; they may be the same.

[0146] (2) Heat dissipation Next, the heat dissipation of the high-frequency module 1 according to Embodiment 5 will be described with reference to Figure 12.

[0147] The heat generated at the first functional electrode 32A of the first elastic wave filter 3A is dissipated to the adhesive conductor 5 through the first substrate 31A. The heat dissipated to the adhesive conductor 5 is then dissipated to the through conductor 6, which is then transmitted to the outside of the high-frequency module 1.

[0148] (3) Effects In the high-frequency module 1 according to Embodiment 5, similar to the high-frequency module 1 according to Embodiment 1, the heat dissipation path from the first elastic wave filter 3A located on the first main surface 21 of the first mounting substrate 2A to the external connection terminal 11 located on the second main surface 22 of the first mounting substrate 2A can be shortened, thereby enabling effective heat dissipation.

[0149] (Embodiment 6) The high-frequency module 1 according to Embodiment 6 differs from the high-frequency module 1 according to Embodiment 1 (see Figure 1) in that it comprises a plurality of through conductors 6, as shown in Figures 13 and 14. Regarding the high-frequency module 1 according to Embodiment 6, components similar to those in the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted.

[0150] (1) Composition As shown in Figures 13 and 14, the high-frequency module 1 according to Embodiment 6 comprises a first mounting substrate 2A, a first elastic wave filter 3 (see Figure 1), a plurality of external connection terminals 11 (see Figure 1), an adhesive conductor 5, and a plurality of through conductors 6.

[0151] As shown in Figure 14, the multiple through-conductors 6 are arranged in a grid pattern in the thickness direction D1 (see Figure 13) of the first mounting substrate 2A. Note that the configuration and function of the through-conductors 6 in Embodiment 6 are the same as those of the through-conductors 6 in Embodiment 1 (see Figure 1), and will not be described further.

[0152] (2) Heat dissipation Next, the heat dissipation of the high-frequency module 1 according to Embodiment 6 will be described with reference to Figure 13.

[0153] The heat generated at the first functional electrode 32 of the first elastic wave filter 3 is dissipated to the adhesive conductor 5 through the first substrate 31. The heat dissipated to the adhesive conductor 5 is then dissipated to the multiple through conductors 6, which then travel through the multiple through conductors 6 and are released to the outside of the high-frequency module 1.

[0154] This allows heat from the first elastic wave filter 3 to be dissipated through a short heat dissipation path.

[0155] (3) Effects In the high-frequency module 1 according to Embodiment 6, similar to the high-frequency module 1 according to Embodiment 1, the heat dissipation path from the first elastic wave filter 3 located on the first main surface 21 of the first mounting substrate 2A to the external connection terminal 11 located on the second main surface 22 of the first mounting substrate 2A can be shortened, thereby enabling effective heat dissipation.

[0156] (4) Variations The following describes a modified example of Embodiment 6.

[0157] (4.1) Variation 1 In the high-frequency module 1 according to modified example 1 of Embodiment 6, as shown in Figures 15 and 16, the multiple through-conductors 6 are arranged in a staggered pattern in a plan view from the thickness direction of the first mounting substrate 2A.

[0158] (4.2) Modification 2 In the high-frequency module 1 according to modified example 2 of Embodiment 6, as shown in Figures 17 and 18, each of the multiple through-conductors 6 has an elongated shape. Each of the multiple through-conductors 6 is elongated in the first direction D21 when viewed from the thickness direction D1 of the first mounting substrate 2A. The multiple through-conductors 6 are arranged in a line along the second direction D22.

[0159] The high-frequency module 1 according to each of the above modified examples also provides the same effects as the high-frequency module 1 according to Embodiment 6.

[0160] (Embodiment 7) Embodiment 7 describes a communication device 9 equipped with a high-frequency module 1.

[0161] (1) Composition As shown in Figure 19, the communication device 9 according to Embodiment 7 comprises a high-frequency module 1, an antenna 91, and a signal processing circuit 92. The communication device 9 is, for example, a mobile terminal (e.g., a smartphone). However, the communication device 9 is not limited to a mobile terminal; it may also be, for example, a wearable device (e.g., a smartwatch).

[0162] The high-frequency module 1 according to Embodiment 7 is a module having the same configuration as the high-frequency module 1 according to Embodiment 1. With respect to the high-frequency module 1 according to Embodiment 7, components that are the same as those in the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their descriptions are omitted.

[0163] The high-frequency module 1 is configured to amplify the transmission signal (high-frequency signal) from the signal processing circuit 92 and output it to the antenna 91. The high-frequency module 1 is also configured to amplify the received signal (high-frequency signal) received by the antenna 91 and output it to the signal processing circuit 92. The high-frequency module 1 is controlled, for example, by the signal processing circuit 92.

[0164] The high-frequency module 1 is a module that supports, for example, 4G (fourth-generation mobile communication) standards and 5G (fifth-generation mobile communication) standards. The 4G standard is, for example, the 3GPP (registered trademark, Third Generation Partnership Project) LTE (registered trademark, Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 is a module that supports carrier aggregation and dual connectivity.

[0165] In the communication device 9, the high-frequency module 1 is electrically connectable to an external circuit board (not shown). The external circuit board is, for example, a motherboard of a mobile terminal or communication device. The statement that the high-frequency module 1 is electrically connectable to the external circuit board includes not only cases where the high-frequency module 1 is directly mounted on the external circuit board, but also cases where the high-frequency module 1 is indirectly mounted on the external circuit board. Indirect mounting of the high-frequency module 1 on the external circuit board includes cases where the high-frequency module 1 is mounted on another high-frequency module mounted on the external circuit board, etc.

[0166] (1.1) Antenna Antenna 91 is connected to the antenna terminal (not shown) of the high-frequency module 1. Antenna 91 has a transmitting function that radiates the transmission signal output from the high-frequency module 1 as radio waves, and a receiving function that receives the reception signal from an external source as radio waves and outputs it to the high-frequency module 1.

[0167] (1.2) Signal Processing Circuits The signal processing circuit 92 is connected to the high-frequency module 1. The signal processing circuit 92 processes the high-frequency signals passing through the high-frequency module 1. More specifically, the signal processing circuit 92 is configured to process the received signals received from the high-frequency module 1. Furthermore, the signal processing circuit 92 is configured to process the transmitted signals output to the high-frequency module 1.

[0168] The signal processing circuit 92 includes a baseband signal processing circuit 93 and an RF signal processing circuit 94.

[0169] The baseband signal processing circuit 93 is, for example, a BBIC (Baseband Integrated Circuit).

[0170] The baseband signal processing circuit 93 performs predetermined signal processing on signals from outside the signal processing circuit 92. More specifically, the baseband signal processing circuit 93 generates a transmission signal from baseband signals (e.g., audio signals and image signals) from outside the signal processing circuit 92, and outputs the generated transmission signal to the RF signal processing circuit 94.

[0171] The baseband signal processing circuit 93 performs predetermined signal processing on the signal from the RF signal processing circuit 94. More specifically, the baseband signal processing circuit 93 outputs the received signal received from the RF signal processing circuit 94 to the outside. The received signal processed by the baseband signal processing circuit 93 is used, for example, as an image signal for image display or as an audio signal for telephone communication.

[0172] The RF signal processing circuit 94 is, for example, an RFIC (Radio Frequency Integrated Circuit) and performs signal processing on high-frequency signals (transmitted signals and received signals).

[0173] The RF signal processing circuit 94 performs signal processing on the transmission signal output from the baseband signal processing circuit 93 and outputs the processed transmission signal to the high-frequency module 1. Specifically, the RF signal processing circuit 94 performs signal processing such as upconversion on the transmission signal output from the baseband signal processing circuit 93 and outputs the processed transmission signal to the transmission path of the high-frequency module 1.

[0174] The RF signal processing circuit 94 performs signal processing on the received signal output from the high-frequency module 1 and outputs the processed received signal to the baseband signal processing circuit 93. Specifically, the RF signal processing circuit 94 performs signal processing such as down-conversion on the received signal output from the receiving path of the high-frequency module 1 and outputs the processed received signal to the baseband signal processing circuit 93.

[0175] (2) Effects According to the communication device 9 of Embodiment 7, in the high-frequency module 1, the heat dissipation path from the first elastic wave filter 3 located on the first main surface 21 of the first mounting substrate 2A to the external connection terminal 11 located on the second main surface 22 of the first mounting substrate 2A can be shortened, thereby enabling effective heat dissipation.

[0176] (3) Variant The following describes a modified example of Embodiment 7.

[0177] The communication device 9 according to a modified embodiment of Embodiment 7 may include any of the high-frequency modules 1 according to Embodiments 2 to 6 instead of the high-frequency module 1 according to Embodiment 1.

[0178] The communication device 9 according to the above modified example also provides the same effects as the communication device 9 according to Embodiment 7.

[0179] The embodiments and modifications described above are only a part of the various embodiments and modifications of the present invention. Furthermore, the embodiments and modifications can be modified in various ways depending on the design, etc., as long as the objectives of the present invention are achieved. [Explanation of symbols]

[0180] 1. High-frequency module 11 External connection terminals 12 Connecting members 121 Patterned Conductor 122 via conductors 13. Ground Layer 14 Bonding wires 2A First mounting board 21 First Main Surface 22 Second Main Surface 23 Side view 24 First Dielectric Layer 25 Second Dielectric Layer 26 signal terminals 27 via conductors 28 Wiring conductors 2B Second mounting board 291 Fifth Main Surface 292 Sixth Main Surface 3.3A First Elastic Wave Filter 31,31A First substrate 311,311A 3rd principal surface 312,312A 4th principal surface 313,313A Piezoelectric material 32,32A 1st functional electrode 321 1st electrode 322 2nd electrode 33,33A First connection terminal 34,34A support layer 35,35A Cover layer 36,36A wiring electrode 37 Connecting via conductors 4. Second elastic wave filter 41 Second board 411 7th Main Surface 412 Eighth main surface 413 Piezoelectric material 42 Second functional electrode 43 Second connection terminal 44 Support layer 45 Cover layer 46 Wiring electrode 47 Connecting via conductors 5. Adhesive Conductors 51 Main surface 52 Main surface 6 Through-conductor 61 First via conductor 62 Second via conductor 63 Main surface 64 Main surface 7A First resin component 71 Top surface 72 Side view 7B Second resin component 73. First resin section 74 Second Resin Part 75 Top surface 76 Side view 77 Side 8A First Shield Layer 81 Top section 82 Side part 8B Second Shield Layer 83 Top section 84 Side part 9. Communication equipment 91 Antenna 92 Signal Processing Circuits 93 Baseband signal processing circuit 94 RF signal processing circuits E1 acoustic reflective layer E11 Low Acoustic Impedance Layer E12 High Acoustic Impedance Layer M1 Module A1, A2, A3, A4, A5 Arrows D1 Thickness direction D21 1st direction D22 2nd direction

Claims

1. A first mounting substrate having a first main surface and a second main surface facing each other, A first elastic wave filter is disposed on the first main surface of the first mounting substrate, External connection terminals located on the second main surface of the first mounting board, An adhesive conductor is disposed between the first main surface of the first mounting substrate and the first elastic wave filter, The first mounting substrate comprises a through conductor that penetrates the first mounting substrate in the thickness direction and is connected to the external connection terminal and the adhesive conductor, The first elastic wave filter is, A first substrate having a third main surface and a fourth main surface facing each other, and containing a piezoelectric material, The first substrate has a first functional electrode located on the third main surface, The fourth main surface of the first substrate is connected to the adhesive conductor, The adhesive conductor and the through conductor overlap with the first functional electrode of the first elastic wave filter in a plan view of the first mounting substrate from the thickness direction. High-frequency module.

2. The adhesive conductor, in a plan view of the first mounting substrate from the thickness direction, overlaps with the entirety of the fourth main surface of the first substrate of the first elastic wave filter. The high-frequency module according to claim 1.

3. A first resin member covering at least a portion of the first elastic wave filter, which is arranged on the first main surface of the first mounting substrate, A first shield layer covering the side surface of the first resin member and at least a portion of the first mounting substrate, The first mounting substrate further comprises a ground layer located inside the substrate and connected to the through-conductor, At least a portion of the ground layer is exposed on the side surface of the first mounting substrate and is connected to the first shield layer. The high-frequency module according to claim 1 or 2.

4. The first mounting board is, The first dielectric layer and The second dielectric layer, A via conductor penetrating the aforementioned first dielectric layer, The second dielectric layer comprises a wiring conductor, The via conductor does not overlap with the first functional electrode of the first elastic wave filter in the thickness direction of the first mounting substrate. The wiring conductor overlaps with the via conductor in the thickness direction of the first mounting substrate. A high-frequency module according to any one of claims 1 to 3.

5. The first mounting board further has signal terminals arranged on the first main surface, The first elastic wave filter further has a first connection terminal, The first connection terminal is connected to the signal terminal via a bonding wire. A high-frequency module according to any one of claims 1 to 4.

6. A second mounting substrate having a fifth main surface and a sixth main surface facing each other, The second mounting substrate further comprises a second elastic wave filter disposed on the fifth main surface of the second mounting substrate, The first elastic wave filter further has a first connection terminal, The first connection terminal is connected to the sixth main surface of the second mounting board. A high-frequency module according to any one of claims 1 to 5.

7. A second resin member covering at least a portion of the second elastic wave filter, The present invention further comprises a second shield layer covering at least a portion of the side surface of the second resin member, The second elastic wave filter is, A second substrate having a seventh main surface and an eighth main surface facing each other, The second substrate has a second functional electrode and a second connection terminal arranged on the seventh main surface, The eighth main surface of the second substrate is connected to the second shield layer. The high-frequency module according to claim 6.

8. The first elastic wave filter allows the transmitted signal to pass through. The second elastic wave filter allows the received signal to pass through. The high-frequency module according to claim 6 or 7.

9. A high-frequency module according to any one of claims 1 to 8, The system comprises a signal processing circuit connected to the aforementioned high-frequency module, Communication device.

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