Sensors and detection devices

JP2026105030APending Publication Date: 2026-06-25KYOCERA CORP

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
KYOCERA CORP
Filing Date
2026-04-20
Publication Date
2026-06-25

AI Technical Summary

Benefits of technology

【0007】 本開示の1つの態様に係るセンサ及び検出装置によれば、小型で、電流を高精度に検出できる。

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Abstract

To be small and to detect magnetic fields with high precision. [Solution] The sensor (10) comprises a diamond substrate (11), a first layer (12) disposed on at least the face (11a) side of the diamond substrate (11) and containing a diamond crystal on which an NV center (13) is located, a second layer (14) disposed on at least the face (11a) side of the diamond substrate (11) and containing a diamond crystal with a lower refractive index than the first layer (12), and a radiator (16) disposed on at least the face (11a) side of the diamond substrate (11) that emits microwaves to generate electron spin resonance, wherein the second layer (14) and the first layer (12) are arranged in that order on at least the face (11a) of the diamond substrate (11).
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Claims

1. circuit board and A first layer comprising a diamond crystal on which an NV center is located, disposed on at least one side of the substrate, A second layer comprising a diamond crystal having a lower refractive index than the first layer, disposed on at least one side of the substrate, A radiator that emits microwaves that generate electron spin resonance is disposed on at least one side of the substrate, Equipped with, On at least one surface of the substrate, the second layer and the first layer are arranged in that order. Sensor.

2. At least one surface of the substrate is the upper surface of the substrate. The sensor according to claim 1.

3. The first layer includes a first diamond layer and a second diamond layer including an NV center. The sensor according to claim 1.

4. The first diamond layer is a non-doped diamond layer. The sensor according to claim 3.

5. The first diamond layer has a reflective surface on the side opposite to the incident surface of the excitation light. The sensor according to claim 4.

6. The aforementioned second layer contains boron-doped diamond, The sensor according to claim 4.

7. The aforementioned radiator includes a capacitance forming section, The sensor according to claim 1.

8. One side of the substrate has a mesa structure, The sensor according to claim 1.

9. A sensor according to any one of claims 1 to 8, Light-emitting element and A light-receiving element, Oscillating element and A detection device comprising, The light-emitting element irradiates the NV center with excitation light, The light-receiving element receives the fluorescence from the NV center. Detection device.

10. The excitation light is irradiated from the side of the first layer. The detection device according to claim 9.

11. The aforementioned oscillator selects the TE mode for the light source. The detection device according to claim 9.