Sensors and detection devices
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- KYOCERA CORP
- Filing Date
- 2026-04-20
- Publication Date
- 2026-06-25
AI Technical Summary
【0007】 本開示の1つの態様に係るセンサ及び検出装置によれば、小型で、電流を高精度に検出できる。
Smart Images

Figure 2026105030000001_ABST
Abstract
Claims
1. circuit board and A first layer comprising a diamond crystal on which an NV center is located, disposed on at least one side of the substrate, A second layer comprising a diamond crystal having a lower refractive index than the first layer, disposed on at least one side of the substrate, A radiator that emits microwaves that generate electron spin resonance is disposed on at least one side of the substrate, Equipped with, On at least one surface of the substrate, the second layer and the first layer are arranged in that order. Sensor.
2. At least one surface of the substrate is the upper surface of the substrate. The sensor according to claim 1.
3. The first layer includes a first diamond layer and a second diamond layer including an NV center. The sensor according to claim 1.
4. The first diamond layer is a non-doped diamond layer. The sensor according to claim 3.
5. The first diamond layer has a reflective surface on the side opposite to the incident surface of the excitation light. The sensor according to claim 4.
6. The aforementioned second layer contains boron-doped diamond, The sensor according to claim 4.
7. The aforementioned radiator includes a capacitance forming section, The sensor according to claim 1.
8. One side of the substrate has a mesa structure, The sensor according to claim 1.
9. A sensor according to any one of claims 1 to 8, Light-emitting element and A light-receiving element, Oscillating element and A detection device comprising, The light-emitting element irradiates the NV center with excitation light, The light-receiving element receives the fluorescence from the NV center. Detection device.
10. The excitation light is irradiated from the side of the first layer. The detection device according to claim 9.
11. The aforementioned oscillator selects the TE mode for the light source. The detection device according to claim 9.