Manufacturing method for semiconductor devices

Abstract

This invention provides a method for manufacturing highly reliable semiconductor devices by preventing damage to semiconductor elements. [Solution] A method for manufacturing a semiconductor device comprises the steps of: preparing a plurality of semiconductor elements; preparing a support member; attaching the plurality of semiconductor elements to the support member such that the second surfaces of the plurality of semiconductor elements face the support member; sealing the plurality of semiconductor elements with a sealing material; removing the support member from the sealing material layer in which the plurality of semiconductor elements are sealed with the sealing material; bonding a first protective film to the second surface of the sealing material layer located on the second surface side of the plurality of semiconductor elements; and forming a redistribution layer on the first surface of the sealing material layer located on the first surface side of the plurality of semiconductor elements 10 after bonding the first protective film to the sealing material layer.

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a semiconductor device.

Background Art

[0002] Patent Document 1 discloses a configuration of a semiconductor device using fan-out package technology and a method for manufacturing the same.

Prior Art Documents

Non-Patent Documents

[0003]

Non-Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the fan-out package technology used in the method for manufacturing a semiconductor device, after arranging and sealing individual semiconductor chips (dies) on another wafer to form a redistribution wafer, a redistribution layer (RDL) is formed to manufacture each semiconductor device. However, when manufacturing a semiconductor device using fan-out package technology, the semiconductor chips mounted on the semiconductor device may be damaged. If the semiconductor chips are damaged, the semiconductor device provided with such semiconductor chips may not exhibit the desired performance, and the reliability of the semiconductor device may be impaired.

[0005] An object of the present disclosure is to provide a manufacturing method for manufacturing a semiconductor device with excellent reliability by preventing damage to semiconductor elements.

Means for Solving the Problems

[0006] This disclosure relates, in one aspect, to a method for manufacturing a semiconductor device. This method for manufacturing a semiconductor device includes the steps of: preparing a plurality of semiconductor elements, each having a first surface on which connection terminals are formed and a second surface on the opposite side of the first surface; preparing a support member; attaching the plurality of semiconductor elements to the support member such that the second surfaces of the plurality of semiconductor elements face the support member; sealing the plurality of semiconductor elements with a sealing material; removing the support member from the encapsulation body in which the plurality of semiconductor elements are sealed with the sealing material; attaching a first protective film to the second surface of the encapsulation body located on the second surface side of the plurality of semiconductor elements; and, after attaching the first protective film to the encapsulation body, forming a redistribution layer on the first surface of the encapsulation body located on the first surface side of the plurality of semiconductor elements.

[0007] In this method, after the first protective film is bonded to the encapsulant, a redistribution layer is formed on the first surface of the encapsulant located on the first surface side of the multiple semiconductor elements. That is, the first protective film is provided on the second surface side of the semiconductor elements before the redistribution layer is formed. In this case, it is possible to prevent damage to the semiconductor elements or encapsulant during the formation of the redistribution layer. This makes it possible to manufacture semiconductor devices with excellent reliability.

[0008] In the above manufacturing method, the first protective film contains a curable material, and it is preferable that the storage modulus of the first protective film at 25°C after curing is 300 MPa to 6000 MPa. When the storage modulus of the first protective film protecting the encapsulant is within this range, warping of the entire semiconductor package during assembly can be suppressed, and the redistribution layer can be formed with high precision. In this embodiment, the storage modulus of the first protective film at 250°C after curing may be 0.1 MPa to 200 MPa. In this case, even if the encapsulant and the like are subjected to thermal effects during the manufacturing process, warping of the entire semiconductor package can be suppressed, and the redistribution layer can be formed with high precision.

[0009] In the above manufacturing method, the first protective film contains a curable material, and in the step of bonding the first protective film, the first protective film bonded to the second surface of the encapsulant is cured, and it is preferable that the adhesive strength between the cured first protective film and the encapsulant is 1.0 MPa or higher. In this case, by firmly bonding the first protective film and the encapsulant, it is possible to prevent the first protective film from peeling off during the manufacturing process, thereby enabling more reliable protection of the semiconductor device. Furthermore, because the first protective film is firmly bonded to the encapsulant, it becomes possible to form the redistribution layer and the like more reliably and accurately.

[0010] In the above manufacturing method, the first protective film contains a curable material, and in the step of bonding the first protective film, the first protective film bonded to the second surface of the encapsulant is cured, and it is preferable that the adhesive strength between the cured first protective film and the multiple semiconductor elements is 1.0 MPa or higher. In this case, by firmly bonding the first protective film and the multiple semiconductor elements, it is possible to prevent the first protective film from peeling off during the manufacturing process, thereby enabling more reliable protection of the semiconductor elements.

[0011] In the above manufacturing method, a step of removing the first protective film may be further included after the step of forming the redistribution layer. In this case, the first protective film, which protects the semiconductor element and encapsulant during the semiconductor device manufacturing process and is subsequently damaged, can be excluded from the final product.

[0012] The above manufacturing method may further include a step of forming solder balls on the redistribution layer, and the protective film may be removed after the step of forming the solder balls. In this case, in the process of manufacturing the semiconductor device, the semiconductor element can be protected with the first protective film until a later step, thereby manufacturing a semiconductor device with higher reliability. Alternatively, such a first protective film may not be included in the final product.

[0013] In the above manufacturing method, the protective film may contain epoxy resin, and in the step of removing the first protective film, the first protective film may be scraped off. By using epoxy resin for the first protective film, in addition to protection from impact, it becomes possible to protect the semiconductor element and the encapsulant from chemicals used in the manufacturing process, etc.

[0014] The above manufacturing method may further include a step of removing the first protective film and attaching a second protective film to the second surface of the encapsulant on which the redistribution layer is formed. In this case, the second protective film can be provided after the formation of the redistribution layer and used as is as a protective film for the semiconductor device being manufactured. Therefore, it becomes possible to manufacture a semiconductor device that can protect semiconductor elements even after it has been made into a product.

[0015] In the above manufacturing method, the second protective film preferably contains a curable material, and the storage modulus of the second protective film at 25°C after curing is preferably 300 MPa to 6000 MPa. When the storage modulus of the second protective film protecting multiple semiconductor elements is within this range, the rigidity of the package is increased, warping of the entire semiconductor package is suppressed, and thereby individualization can be performed with high precision. Furthermore, it becomes possible to more reliably protect the semiconductor elements in each semiconductor device after individualization, and a highly reliable semiconductor device can be obtained. In this embodiment, the storage modulus of the second protective film at 250°C after curing may be 0.1 MPa to 200 MPa. In this case, even if the encapsulant is affected by heat during the manufacturing process, individualization can be performed with high precision. Furthermore, even if each semiconductor device after individualization is affected by heat, the semiconductor elements can be more reliably protected, and a highly reliable semiconductor device can be obtained.

[0016] In the above manufacturing method, the second protective film contains a curable material, and in the step of bonding the second protective film, the second protective film bonded to the second surface of the sealant is cured, and it is preferable that the adhesive strength between the cured second protective film and the sealant is 1.0 MPa or higher. In this case, by firmly bonding the second protective film and the sealant, it is possible to prevent the second protective film from peeling off during fragmentation, etc., thereby obtaining a semiconductor device having semiconductor elements appropriately protected by the second protective film. Furthermore, by being firmly bonded in this manner, it is possible to reliably protect the semiconductor elements in the manufactured semiconductor device with the second protective film. In this embodiment, it is more preferable that the adhesive strength between the cured second protective film and the sealant is 7.0 MPa or higher. This further reliably protects the semiconductor elements with the second protective film, and a more reliable semiconductor device can be obtained.

[0017] In the above manufacturing method, the second protective film contains a curable material, and in the step of bonding the second protective film, the second protective film bonded to the second surface of the sealant is cured, and it is preferable that the adhesive strength between the cured second protective film and the multiple semiconductor elements is 1.0 MPa or higher. In this case, by firmly bonding the second protective film and the multiple semiconductor elements, it is possible to prevent the second protective film from peeling off during fragmentation, etc., thereby obtaining a semiconductor device having semiconductor elements appropriately protected by the second protective film. Furthermore, by being firmly bonded in this manner, it is possible to reliably protect the semiconductor elements in the manufactured semiconductor device with the second protective film. In this embodiment, it is more preferable that the adhesive strength between the cured second protective film and the multiple semiconductor elements is 7.0 MPa or higher. This further reliably protects the semiconductor elements with the second protective film, and a more reliable semiconductor device can be obtained.

[0018] The above manufacturing method may further include a step of separating the semiconductor device into individual components corresponding to each of the multiple semiconductor elements after the second protective film has been attached to the second surface of the encapsulant. This makes it possible to easily obtain a semiconductor device including the second protective film.

[0019] In the above manufacturing method, the first protective film and the second protective film may be formed from the same type of protective film. In this case, the management of the protective film in the manufacturing process becomes easier.

Advantages of the Invention

[0020] According to one aspect of the present disclosure, it is possible to provide a semiconductor device with excellent reliability by preventing damage to semiconductor elements or encapsulants in the manufacture of semiconductor devices.

Brief Description of the Drawings

[0021] [Figure 1] FIG. 1 is a cross-sectional view showing an example of a semiconductor device manufactured by the method according to an embodiment of the present disclosure. [Figure 2] (a) to (e) of FIG. 2 are diagrams showing a part of a method for manufacturing the semiconductor device shown in FIG. 1. [Figure 3] (a) to (d) of FIG. 3 are diagrams showing the steps of a method for manufacturing the semiconductor device shown in FIG. 1, which are performed subsequent to the steps of FIG. 2. [Figure 4] (a) to (d) of FIG. 4 are diagrams showing the steps of a method for manufacturing the semiconductor device shown in FIG. 1, which are performed subsequent to the steps of FIG. 3. [Figure 5] (a) to (d) of FIG. 5 are diagrams showing the steps of a method for manufacturing the semiconductor device shown in FIG. 1, which are performed subsequent to the steps of FIG. 4. [Figure 6] FIG. 6 is a cross-sectional view showing a method for producing a test body used in an example. [Figure 7] FIG. 7 is a cross-sectional view showing an example of a test body used in an example. [Figure 8] FIG. 8 is a diagram showing a method for measuring the adhesive strength of a test body in an example. [Figure 9] FIG. 9 is a diagram showing the adhesive strength in Example 1.

Embodiments for Carrying Out the Invention

[0022] Hereinafter, several embodiments of this disclosure will be described in detail, with reference to the drawings as necessary. However, this disclosure is not limited to the embodiments described below. In the following description, the same or corresponding parts will be denoted by the same reference numerals, and redundant descriptions may be omitted. Unless otherwise specified, positional relationships such as top, bottom, left, and right will be based on the positional relationships shown in the drawings. The dimensional ratios in the drawings are not limited to those shown.

[0023] In this specification, the term "layer" includes not only structures that are formed across the entire surface when observed in a plan view, but also structures that are formed in only a part of the surface. In this specification, the term "process" includes not only independent processes, but also processes that cannot be clearly distinguished from other processes, as long as their intended function is achieved.

[0024] In this specification, numerical ranges indicated using "~" represent a range that includes the numbers before and after "~" as the minimum and maximum values, respectively. In numerical ranges described in stages in this specification, the upper or lower limit of one stage of the numerical range may be replaced with the upper or lower limit of another stage of the numerical range. In numerical ranges described in this specification, the upper or lower limit of that numerical range may be replaced with the values ​​shown in the examples.

[0025] (Configuration of a semiconductor device) Figure 1 is a schematic cross-sectional view showing an example of a semiconductor device manufactured by the manufacturing method according to this embodiment. As shown in Figure 1, the semiconductor device 1 is, for example, a device having a fan-out structure and comprises a semiconductor element 10, a encapsulating material layer 11, a protective layer 12, a redistribution layer 13, and solder balls 14. The semiconductor device 1 is manufactured, for example, by fan-out package (FO-PKG) technology, and may be manufactured by fan-out wafer-level package (FO-WLP) technology or by fan-out panel-level package (FO-PLP) technology.

[0026] The encapsulating layer 11 is a layer in which the semiconductor element 10 is encapsulated with an encapsulating material such as resin. The protective layer 12 is a cured layer placed on the second surface 10b of the semiconductor element 10 and the surface 11a of the encapsulating layer 11, and is formed by curing the BSC film 34, which will be described later. The redistribution layer 13 is a layer for widening the terminal pitch of the connection terminal 10c on the first surface 10a side of the semiconductor element 10, and is composed of an insulating portion 13a such as polyimide and a wiring portion 13b such as copper wiring. The solder ball 14 is connected to the terminal whose terminal pitch has been widened by the redistribution layer 13, thereby converting (widening) the pitch of the connection terminal 10c of the semiconductor element 10 before connecting it to the solder ball 14.

[0027] (Method of manufacturing semiconductor devices) Next, a method for manufacturing semiconductor device 1 will be described with reference to Figures 2 to 5. Figures 2 to 5 are diagrams illustrating the method for manufacturing semiconductor device 1 in sequence. This method for manufacturing a semiconductor device describes, in sequence, a method for manufacturing a semiconductor device having a fan-out structure (face-up, without support plate).

[0028] First, multiple semiconductor elements 10 are prepared, each having a first surface 10a on which a connection terminal 10c is formed, and a second surface 10b on the opposite side of the first surface 10a (see Figures 1 and 2(b)). The multiple semiconductor elements 10 are formed together, for example, by a normal semiconductor process, and then diced to create individual semiconductor elements 10. This manufacturing process can be carried out using conventional methods, so a detailed explanation is omitted.

[0029] Furthermore, as shown in Figure 2(a), in this semiconductor device manufacturing method, an adhesive layer 21 is provided on a metal carrier 20, thereby forming (preparing) a support member 22 for supporting a plurality of semiconductor elements 10. The thickness of the carrier 20 is, for example, 0.1 mm or more and 2.0 mm or less. However, the thickness of the carrier 20 is not limited to this. The carrier 20 may also be in the shape of a disc-shaped wafer when viewed from above, or in the shape of a rectangular panel. As the adhesive layer 21, for example, a release sheet that has adhesive strength at room temperature but whose adhesive strength decreases when heated (for example, Nitto Denko Corporation, product name: Riva Alpha (registered trademark)) can be used. The adhesive layer 21 is composed of, for example, an acrylic pressure-sensitive adhesive.

[0030] Next, once the support member 22 is ready, the semiconductor elements 10 are placed on the adhesive layer 21 so that their second faces 10b face the adhesive layer 21 (i.e., face-up), as shown in Figure 2(b). After the semiconductor elements 10 are placed on the support member 22, the semiconductor elements 10 are sealed with an epoxy resin or other sealing resin (sealing material) to form a sealing layer 24 (sealing body), as shown in Figure 2(c). As a result, the entire semiconductor elements 10 are covered with the sealing resin and enclosed within the sealing layer 24. The material used to seal the semiconductor elements 10 may be an insulating resin other than epoxy resin.

[0031] Next, once the sealing is complete, as shown in Figure 2(d), the adhesive layer 21 is heated to peel it off from the semiconductor element 10 and remove the carrier 20. At this point, the second surface 10b of the semiconductor element 10 is exposed from the sealing material layer 24.

[0032] Next, as shown in Figure 2(e), a protective film 26 (first protective film) is applied to the side (second surface) of the encapsulating material layer 24 where the semiconductor element 10 is exposed. The protective film 26 is, for example, called a backside coat (BSC), and is a film that protects the exposed surface of the semiconductor element 10 and the encapsulating material layer 24 from contamination by chemicals in subsequent processes or from the application of external forces. This protective film is made of, for example, epoxy resin. The protective film 26 may be curable or non-curable. If the protective film 26 is curable, it may be either thermosetting or energy ray curing, and after the protective film 26 is applied, it is cured by either heat or energy rays to become a cured film. If the protective film 26 is a non-curable protective film, for example, a non-curable protective film forming composition containing polymer components such as acrylic polymer, polyimide, polyamide, or silicone polymer can be used. If the protective film 26 is a thermosetting protective film, it is sufficient to contain a compound having a functional group that reacts upon heating. For example, a thermosetting protective film-forming composition can be used that contains a polymerizable monomer having a reactive group such as a hydroxyl group, carboxyl group, epoxy group, or amino group (reactive group-containing polymerizable monomer), a polymer of the reactive group-containing polymerizable monomer, or a thermosetting resin such as an epoxy resin or phenolic resin. Furthermore, if the protective film 26 is an energy-ray curable protective film, it is sufficient to contain a compound having a functional group that reacts upon irradiation with energy rays. For example, an energy-ray curable protective film-forming composition can be used that contains a reactive group-containing polymerizable monomer such as an acrylic monomer, a polymer of the reactive group-containing polymerizable monomer, or an energy-ray curable resin such as an epoxy resin. These protective film-forming compositions may be used alone or in combination of two or more types. Furthermore, they can also be used in combination with a substrate such as a polyimide film.

[0033] If the protective film 26 is made of a thermosetting or energy ray curable material, its storage modulus at 25°C after curing may be 300 MPa to 6000 MPa. When the storage modulus of the protective film 26 protecting the encapsulating layer 24 is within this range, the rigidity of the package can be increased, suppressing warping of the entire semiconductor package during assembly, and enabling the redistribution layer 28, described later, to be formed with high precision. Furthermore, the storage modulus of the protective film 26 at 250°C after curing may be 0.1 MPa to 200 MPa. In this case, even if the encapsulating layer 24, etc., is subjected to thermal effects during the manufacturing process, warping of the entire semiconductor package can be suppressed, and the redistribution layer 28 can be formed with high precision.

[0034] Furthermore, if the protective film 26 is a thermosetting or energy ray curable material, it may be formed from a curable material such that the adhesive strength between the cured protective film 26 and the encapsulating layer 24 and the semiconductor element 10 is 1.0 MPa or more. In this way, the protective film 26 is firmly bonded to the encapsulating layer 24 or the semiconductor element 10, preventing the protective film 26 from peeling off during the manufacturing process, thereby enabling more reliable protection of the semiconductor element 10 and the encapsulating layer 24. In addition, the firm bond of the protective film 26 to the encapsulating layer 24 or the semiconductor element 10 enables more reliable and precise formation of the redistribution layer 28, etc. The protective film 26 may be formed from a curable material such that the adhesive strength between the cured protective film 26 and the encapsulating layer 24 and the semiconductor element 10 is 7.0 MPa or more, or from a curable material such that the adhesive strength is 10 MPa or more. The above adhesive strengths are all at room temperature (25°C), but the adhesive strength at high temperatures (e.g., 250°C) is the same.

[0035] Next, once the semiconductor element 10 is sealed with sealing resin and protected by protective film 26, as shown in Figure 3(a), the sealing material layer 24 on the protective film 26 is polished until the connection terminals 10c of the semiconductor device 1 are exposed, forming the sealing material layer 24a. In this polishing step, for example, the sealing material layer 24 is polished until the connection terminals 10c located on the first surface 10a side of the semiconductor element 10 are exposed to the outside from the sealing resin. This exposes the connection terminals 10c of the semiconductor element 10 from the surface of the polished sealing material layer 24a, making connection possible. During this polishing step, the second surface 10b side of the semiconductor element 10 is covered by protective film 26, preventing damage to the surface opposite to the surface of the semiconductor element 10 and sealing material layer 24a (the bottom surface shown).

[0036] Next, once the polishing of the encapsulating material layer is complete, as shown in Figure 3(b), a redistribution layer 28 is formed on the first surface 10a of the multiple semiconductor elements 10 while the multiple semiconductor elements 10 are fixed on the protective film 26. The redistribution layer 28 corresponds to the redistribution layer 13 of the semiconductor device 1 described above, and consists of an insulating layer portion 28a made of polyimide or the like, and a wiring portion 28b made of copper wiring or the like within the insulating layer portion 28a. In the redistribution layer 28 formation process, the formation of the insulating layer and the formation of the wiring portion are repeated a predetermined number of times to form a wiring layer for pitch conversion. In this process, the semiconductor elements 10 are protected by being covered with the encapsulating material layer 24a and the protective film 26, so damage to the semiconductor elements 10 is prevented when constructing a fine redistribution layer. In addition, because the protective film 26 has high rigidity, it is possible to form the redistribution layer 28 without causing warping or the like.

[0037] Next, once the redistribution layer is formed, as shown in Figure 3(c), with the multiple semiconductor elements 10 fixed on the protective film 26, solder balls 30 are formed so that the connection terminals 10c of the multiple semiconductor elements 10 are connected to the solder balls 30 via the redistribution layer 28. At this time, the pitch of the solder balls 30 is formed to be wider than the terminal pitch of the connection terminals 10c of the semiconductor elements 10. These solder balls 30 correspond to the solder balls 14 in the semiconductor device 1 described above.

[0038] Next, once the solder ball 30 is formed, a protective tape 32 (BG tape) is applied to protect the solder ball 30, as shown in Figure 3(d). The protective tape 32 is made of, for example, polyolefin. Then, as shown in Figure 4(a), with the solder ball 30 protected by the protective tape 32, the protective film 26 is scraped off. At this time, a portion of the second surface 10b side of the semiconductor element 10 may be scraped off to make it thinner. This scraping process can be carried out, for example, using a surface grinding device (for example, a surface grinding device manufactured by Disco Corporation).

[0039] Subsequently, as shown in Figures 4(b) and 4(c), the dicing tape 36 is attached via the BSC film 34 (second protective film), and the protective tape 32 is removed in that state. The BSC film 34 is made of, for example, epoxy resin. After the removal of the protective tape 32 is complete, as shown in Figure 4(d), laser marking is performed on the BSC film 34 using a laser beam L to write necessary information such as the product name. The BSC film 34 may be an energy-ray curable protective film, or it may be cured by a laser or the like. The BSC film 34 constitutes a part of the semiconductor device (protective layer 12).

[0040] The BSC film 34 is, for example, called a backside coat (BSC), and in the manufacturing process, functions as a component for fixing the dicing tape 36 to the encapsulant layer 24a and the semiconductor element 10. After being manufactured into the semiconductor device 1 shown in Figure 1, the BSC film 34 becomes a protective layer 12, protecting the semiconductor element 10 in the semiconductor device 1. Such a BSC film 34 may be formed from the same type of protective film as the protective film 26 described above, for example, from epoxy resin. By making the BSC film 34 from the same material as the protective film 26, the management of the protective film in the manufacturing process becomes easier. The BSC film 34 may be curable or non-curable. If the BSC film 34 is curable, it may be either thermosetting or energy ray curing, and after the BSC film 34 is applied, it is cured by either heat or energy rays to become a cured film. When the BSC film 34 is a non-curable protective film, for example, a non-curable protective film-forming composition containing polymer components such as acrylic polymer, polyimide, polyamide, or silicone polymer can be used. When the BSC film 34 is a thermosetting protective film, it is sufficient to contain a compound having a functional group that reacts upon heating. For example, a thermosetting protective film-forming composition containing a polymerizable monomer having a reactive group such as a hydroxyl group, carboxyl group, epoxy group, or amino group (reactive group-containing polymerizable monomer), a polymer of the reactive group-containing polymerizable monomer, or a thermosetting resin such as an epoxy resin or phenolic resin can be used. Furthermore, when the BSC film 34 is an energy-ray curable protective film, it is sufficient to contain a compound having a functional group that reacts upon irradiation with energy rays. For example, an energy-ray curable protective film-forming composition containing a polymerizable monomer having a reactive group such as an acrylic monomer, a polymer of the reactive group-containing polymerizable monomer, or an energy-ray curable resin such as an epoxy resin can be used. These protective film-forming compositions may be used alone or in combination of two or more types. Furthermore, they can also be used in combination with a substrate such as a polyimide film. The BSC film 34 may be formed from a different material than the protective film 26.

[0041] If the BSC film 34 is a thermosetting or energy ray curable material, its storage modulus at 25°C after curing may be 300 MPa to 6000 MPa. When the storage modulus of the BSC film 34 protecting the encapsulating layer 24a is within this range, the rigidity of the package can be increased, suppressing warping of the entire semiconductor package, thereby enabling accurate individualization, as described later. Furthermore, it becomes possible to more reliably protect the semiconductor elements 10 in each individual semiconductor device 1, resulting in a highly reliable semiconductor device. Moreover, the storage modulus of the BSC film 34 at 250°C after curing may be 0.1 MPa to 200 MPa. In this case, even if the encapsulating layer 24a, etc., is affected by heat during the manufacturing process, accurate individualization can be performed. Furthermore, even if each individual semiconductor device 1 is affected by heat after individualization, the semiconductor elements 10 can be more reliably protected, resulting in a highly reliable semiconductor device.

[0042] Furthermore, if the BSC film 34 is a thermosetting or energy ray curable material, it may be formed from a curable material such that the adhesive strength between the cured BSC film 34 and the encapsulating layer 24a and the multiple semiconductor elements 10 (e.g., silicon chips) after bonding is 1.0 MPa or more. By firmly bonding the BSC film 34 to the encapsulating layer 24a and the semiconductor elements 10 in this way, it is possible to prevent the BSC film 34 from peeling off during piece formation, etc., thereby obtaining a semiconductor device 1 having semiconductor elements 10 that are appropriately protected by the BSC film 34 (protective layer 12). In addition, by being firmly bonded in this way, it is possible to reliably protect the semiconductor elements 10 in the manufactured semiconductor device 1 with the BSC film 34. The BSC film 34 may be formed from a curable material such that the adhesive strength between the cured BSC film 34 and the encapsulating layer 24a and the multiple semiconductor elements 10 is 7.0 MPa or more, or it may be formed from a curable material such that the adhesive strength is 10 MPa or more. This ensures that the semiconductor element 10 is further protected by the BSC film 34, resulting in a more reliable semiconductor device. Note that the above adhesive strengths are all measured at room temperature (25°C), but the adhesive strength at high temperatures (e.g., 250°C) is similar.

[0043] Next, once laser marking on the BSC film 34 is complete, the die rearrangement body, which is in the shape of a wafer or panel as shown in Figure 5(a), is diced at predetermined locations S, as shown in Figures 5(b) and (c). At this time, the BSC film 34 is cut together with the encapsulating layer 24a, but because it is firmly adhered to the encapsulating layer 24a, no peeling or displacement of the BSC film 34 occurs. Then, each part containing the semiconductor element 10 is separated into individual pieces to form each semiconductor device 1. In this way, multiple semiconductor devices 1 shown in Figures 5(d) and 1 can be obtained from a die rearrangement body in which multiple semiconductor elements 10 have been rearranged.

[0044] As described above, according to the semiconductor device manufacturing method of this embodiment, after the protective film 26 is bonded to the encapsulating material layer 24, a redistribution layer 28 is formed on the first surface of the encapsulating material layer 24 (24a) located on the first surface 10a side of the multiple semiconductor elements 10. That is, the protective film 26 is provided on the second surface 10b side of the semiconductor elements 10 before the step of forming the redistribution layer 28. Therefore, this method makes it possible to prevent damage to the semiconductor elements 10 and the encapsulating material layer 24 during the formation of the redistribution layer 28. As a result, a semiconductor device 1 with excellent reliability can be manufactured.

[0045] Furthermore, in the manufacturing method according to this embodiment, the protective film 26 may contain a curable material, and the storage modulus of the protective film 26 at 25°C after curing may be 300 MPa to 6000 MPa. In this case, warping of the entire semiconductor package during assembly can be suppressed, and the redistribution layer 28 can be formed with high precision. Moreover, the storage modulus of the protective film 26 at 250°C after curing may be 0.1 MPa to 200 MPa. In this case, even if the sealing material layer 24, etc., is affected by heat during the manufacturing process, warping of the entire semiconductor package can be suppressed, and the redistribution layer 28 can be formed with high precision.

[0046] Furthermore, in the manufacturing method according to this embodiment, the protective film 26 includes a curable material, and in the step of bonding the protective film 26, the protective film 26 bonded to the sealing material layer 24 is cured, and the adhesive strength between the cured protective film 26, the sealing material layer 24, and the semiconductor element 10 may be 1.0 MPa or more. In this case, by firmly bonding the protective film 26 to the sealing material layer 24 and the semiconductor element 10, it is possible to prevent the protective film 26 from peeling off during the manufacturing process, thereby more reliably protecting the semiconductor element 10. In addition, because the protective film 26 is firmly bonded to the sealing material layer 24 and the semiconductor element 10, it becomes possible to form the redistribution layer 28 and the like more reliably and accurately.

[0047] Furthermore, the manufacturing method according to this embodiment further includes a step of removing the protective film 26 after the step of forming the redistribution layer 28. This makes it possible to avoid including the protective film 26, which protects the semiconductor element 10 and the encapsulating material layer 24 and is damaged or otherwise affected during the manufacturing process of the semiconductor device 1, in the final product.

[0048] Furthermore, the manufacturing method according to this embodiment further includes a step of forming solder balls 30 on the redistribution layer 28, and further includes a step of removing the protective film 26 after the step of forming the solder balls 30. This makes it possible to protect the semiconductor element 10 and the encapsulating layer 24 with the protective film 26 until a later step in the manufacturing process of the semiconductor device 1, thereby manufacturing a semiconductor device 1 with higher reliability. In addition, such a protective film 26 can be omitted from the final product.

[0049] Furthermore, in the manufacturing method according to this embodiment, the protective film 26 may contain epoxy resin, and in the step of removing the protective film 26, the protective film 26 may be scraped off. By using epoxy resin for the protective film 26, in addition to protection from impact, it becomes possible to protect the semiconductor element 10 and the sealing material layer 24 from chemicals used in the manufacturing process, etc.

[0050] Furthermore, the manufacturing method according to this embodiment further includes a step of removing the protective film 26 and attaching another protective film, the BSC film 34, to the second surface of the sealing material layer 24a on which the redistribution layer 28 is formed. This makes it possible to use the BSC film 34 as the protective layer 12 of the semiconductor device 1 that is manufactured by providing another protective film after the formation of the redistribution layer 28. Thus, it is possible to manufacture a semiconductor device 1 that can protect the semiconductor element 10 even after it has been made into a product.

[0051] Furthermore, in the manufacturing method according to this embodiment, the BSC film 34 may contain a curable material, and the storage modulus of the BSC film 34 at 25°C after curing may be 300 MPa to 6000 MPa. In this case, the rigidity of the package is increased, suppressing warping of the entire semiconductor package, thereby enabling accurate individualization. In addition, it becomes possible to more reliably protect the semiconductor elements 10 in each semiconductor device 1 after individualization. Moreover, the storage modulus of the BSC film 34 at 250°C after curing may be 0.1 MPa to 200 MPa. In this case, even if the encapsulant is subjected to thermal effects during the manufacturing process, warping of the entire semiconductor package can be suppressed, enabling accurate individualization. In addition, even if each semiconductor device 1 is subjected to thermal effects after individualization, the semiconductor elements 10 can be more reliably protected.

[0052] Furthermore, in the manufacturing method according to this embodiment, the BSC film 34 includes a curable material, and in the step of bonding the BSC film 34, the BSC film 34 bonded to the encapsulating layer 24a is cured, and the adhesive strength between the cured BSC film 34, the encapsulating layer 24a, and the semiconductor element 10 may be 1.0 MPa or more. In this case, the strong adhesion between the BSC film 34, the encapsulating layer 24a, and the semiconductor element 10 prevents the BSC film 34 from peeling off and shifting during piece formation, thereby enabling the creation of a semiconductor device 1 having a semiconductor element 10 appropriately protected by the BSC film 34. Moreover, this strong adhesion makes it possible to reliably protect the semiconductor element 10 in the manufactured semiconductor device 1 with the BSC film 34 (protective layer 12). The adhesive strength between the cured BSC film 34, the encapsulating layer 24a, and the semiconductor element 10 may be 7.0 MPa or more, in which case the semiconductor element 10 is further reliably protected by the BSC film 34, resulting in a highly reliable semiconductor device.

[0053] Although embodiments of the present invention have been described in detail above, the present invention is not limited to the above embodiments and can be applied to various embodiments. [Examples]

[0054] The present invention will be described in more detail below with reference to examples. However, the present invention is not limited to these examples. In the following examples, the adhesive strength between the protective film 26 and the encapsulating layer 24 used in the semiconductor device manufacturing method according to the above-described embodiment, and the adhesive strength between the protective film 26 and the semiconductor element 1 will be described. The adhesive strengths described above can also be applied similarly to the adhesive strength between the BSC film 34 and the encapsulating layer 24a, and the adhesive strength between the BSC film 34 and the semiconductor element 1.

[0055] (Example 1) The following materials were prepared as raw materials for the protective film 26, and these materials were mixed to obtain the protective film. • Thermoplastic resin: Acrylic polymer with epoxy groups (glass transition temperature: 12°C, weight-average molecular weight: 800,000) 15 parts by mass • Thermosetting resin: YDF-8170C (product name, Nippon Steel Chemical & Material Co., Ltd., bisphenol F type liquid epoxy resin, epoxy equivalent 157) 15 parts by mass • Thermosetting resin: N-500P-10 (product name, manufactured by DIC Corporation, cresol novolac type epoxy resin) 5 parts by mass • Hardener: PSM-4326 (product name, manufactured by Gun-ei Chemical Industry Co., Ltd., phenolic resin) 15 parts by mass • Silica filler: SC2050-HLG (product name, manufactured by Admatex Co., Ltd.) 50 parts by mass • Light absorber: FP-Black (product name, manufactured by Sanyo Shikiso Co., Ltd., dispersion containing 30% by mass of carbon black) 3 parts by mass • Silane coupling agent: A-189 (trade name, manufactured by Momentive, (3-mercaptopropyl)trimethoxysilane) 0.1 parts by mass • Silane coupling agent: A-1160 (product name, manufactured by Momentive, 3-ureidopropyltriethoxysilane) 0.3 parts by mass • Curing accelerator: 2PZ-CN (product name, manufactured by Shikoku Chemicals Co., Ltd., 1-cyanoethyl-2-phenylimidazole) 0.05 parts by mass

[0056] The protective film 52 described above was laminated using a vacuum laminator (product name V-130, manufactured by Nikko Materials Co., Ltd.) to a thickness of 700 μm and a size of 9 × 9 mm, as shown in Figures 6(a) and (b). 2 Vacuum lamination was performed on a glass carrier 50 of size (Eagle XG, manufactured by Hiraoka Special Glass Co., Ltd.). The lamination conditions were as follows: the top and bottom temperatures of the laminator were set to 90°C and 40°C, the pressure on the top platen was 0.5 MPa, the vacuum setting pressure was 5.0 hPa, the vacuum de-vacuum time was 20 seconds, the top slap time was 0 seconds, and the top pressurization time was 60 seconds. As a result, a film laminate 54 was obtained in which a protective film 52 with a thickness of 20 μm was formed on one surface of the glass carrier 50.

[0057] Furthermore, as shown in Figure 6(c), a sealing body 56 was fabricated from epoxy resin (CEL-400ZHF40, manufactured by Showa Denko Materials Co., Ltd.). This sealing body 56 has a trapezoidal cross-sectional shape, and the area of ​​the base surface 56a is 10 mm². 2 The bottom surface 56a of the sealant 56 was the adhesive surface that adhered to the protective film 52 described above. The sealant 56 was cured.

[0058] Next, as shown in Figures 6(c) and (d), a push-pull gauge (FB-50N, manufactured by Imada Co., Ltd.) was used to press the sealant onto the protective film 52 of the film laminate 54 with a constant load for 5 seconds, thereby bonding the bottom surface 56a of the sealant 56 to the protective film 52. The protective film 52 on the film laminate 54 was then cured in that state. Such test specimens 58 were prepared as test specimens 1 to 6 (see Figure 7). The pressing load and curing conditions when each test specimen 1 to 6 was prepared are shown in Table 1. For curing in an air atmosphere, a Perfect Oven PHH-202 (manufactured by ESPEC Co., Ltd.) was used, and for curing in a nitrogen (N2) atmosphere, a High Temperature Clean Oven CLH-21CD(V)-S (manufactured by Koyo Thermo Co., Ltd.) was used.

[0059] [Table 1]

[0060] Next, a shear test was performed on test specimens 1 to 6, prepared under the conditions described above, as shown in Figure 8, to measure the adhesive strength. A System650 manufactured by ROYCE ins. was used for the measurement. As shown in Figure 8, the probe 60 of the measuring device was set so that the tip 62 of the probe 60 was 100 μm away from the surface 52a of the protective film 52, and the probe 60 was moved at 50 μm / s to peel off the sealant 56. The force at which this peeling occurred was defined as the adhesive strength (MPa) between the sealant 56 and the protective film 52. The test was performed on N=10 for each test specimen 1 to 6, and the results shown in Figure 9 were obtained. The average adhesive strength of each test specimen 1 to 6 was also calculated. The test results are shown in Figure 9 and Table 2. This test was performed at room temperature (25°C).

[0061] [Table 2]

[0062] (Example 2) Next, to test the adhesive strength between the protective film 52 and the semiconductor element, a 400 μm thick silicon body was pressed onto the protective film 52 of the film laminate 54 described above, using the same method as shown in Figure 6, thereby bonding the silicon body to the protective film 52. The protective film 52 on the film laminate 54 was then cured in that state. This test specimen was prepared as test specimen 7. The pressing load and curing conditions for test specimen 7 were the same as for test specimen 1. The adhesive area was 10 mm², as described above. 2 That was the case.

[0063] Next, a shear test similar to that in Example 1 was performed on test specimen 7, which was prepared under the conditions described above, to measure the adhesive strength between the protective film 52 and the silicon body (corresponding to a semiconductor element). Test specimen 7 was tested with N=10, and the average adhesive strength was calculated. The test results are shown in Table 3. This test was conducted at room temperature (25°C).

[0064] [Table 3] (Example 3)

[0065] Next, the adhesive strength between the protective film 52 and the silicone body was measured under the same conditions as in Example 2, except for the temperature during the test. This test in Example 3 was conducted at 250°C. That is, the adhesive strength between the protective film 52 and the silicone body at high temperature was measured. The test results are shown in Table 4.

[0066] [Table 4]

[0067] As shown in Tables 2 to 4 above, it was confirmed that the adhesive strength between the protective film 52, the encapsulant 56, and the semiconductor element (silicon body) at 25°C can be 1.0 MPa or higher and 7.0 MPa or higher. Furthermore, it was confirmed that the adhesive strength between the protective film 52 and the semiconductor element (silicon body) can be 1.0 MPa or higher and 7.0 MPa or higher even in a high-temperature atmosphere. It was confirmed that by using a protective film with such adhesive strength as the protective film 26 or BSC film 34 in the semiconductor device manufacturing method, damage to the semiconductor element or encapsulant during semiconductor device manufacturing can be prevented, and a semiconductor device with excellent reliability can be provided. [Explanation of Symbols]

[0068] 1... Semiconductor device, 10... Semiconductor element, 10a... First surface, 10b... Second surface, 10c... Connection terminal, 22... Support member, 24... Encapsulating material layer (encapsulator), 24a... Encapsulating material layer (encapsulator), 26... Protective film, 28... Redistribution layer, 30... Solder ball, 34... BSC film.

Claims

[Claim 1] A step of preparing a plurality of semiconductor elements, each having a first surface on which a connection terminal is formed and a second surface on the opposite side of the first surface, The process of preparing the support members, A step of attaching the plurality of semiconductor elements to the support member such that the second surfaces of the plurality of semiconductor elements face the support member, A step of sealing the plurality of semiconductor elements with a sealing material, A step of removing the support member from the sealant in which the plurality of semiconductor elements are sealed with the sealing material, A step of bonding a first protective film to the second surface of the sealing body located on the second surface side of the plurality of semiconductor elements, The process involves bonding the first protective film to the encapsulant, and then forming a redistribution layer on the first surface of the encapsulant located on the first surface side of the plurality of semiconductor elements. A method for manufacturing a semiconductor device, comprising:

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