Etching composition, etching method, and method for manufacturing a semiconductor substrate

The etching composition with an oxidizing agent, fluoride ion-releasing compound, and amine compounds addresses the selectivity and stability issues in SiGe etching, ensuring precise and stable etching of SiGe layers with varying germanium concentrations, enhancing semiconductor manufacturing processes.

JP2026111523APending Publication Date: 2026-07-03TOKYO OHKA KOGYO CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
TOKYO OHKA KOGYO CO LTD
Filing Date
2025-12-03
Publication Date
2026-07-03

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Abstract

The present invention provides an etching composition, etching method, and semiconductor substrate manufacturing method that exhibit excellent selectivity for silicon germanium. [Solution] The present invention provides an etching composition, an etching method, and a method for manufacturing a semiconductor substrate, each containing (A) an oxidizing agent, (B) a compound or salt thereof capable of releasing fluoride ions, (C) at least one amine compound selected from the group consisting of an amine compound having a specific structure (c1), an amine compound having a specific structure (c2), an amine compound having a specific structure (c3), piperazine, 1,5,9-triazacyclododecane, 1,4,7-triazacyclononane, cyclene, cyclam, tetraethylenepentamine, and polyethyleneimine, and derivatives thereof, and (D) a corrosion inhibitor.
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